MUR1260CTD [THINKISEMI]

12.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifiers;


型号：	MUR1260CTD
厂家：	Thinki Semiconductor Co., Ltd.
描述：	12.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifiers
文件：	总2页 (文件大小：617K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MUR1220CTR thru MUR1260CTR

Pb Free Plating Product

12.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifiers

Unit : inch (mm)

TO-220AB

Feature

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

ꢀ

Fast switching for high efficiency

Low forward voltage drop

High current capability

.139(3.55)

MIN

.054(1.39)

.045(1.15)

Low reverse leakage current

High surge current capability

Application

Automotive Environment(Inverters/Converters)

ꢀ

Plating Power Supply,Adaptor,SMPS and UPS

Car Audio Amplifiers and Sound Device System

.038(0.96)

.019(0.50)

.025(0.65)MAX

Mechanical Data

ꢀ

Case:TO-220AB Heatsink

.1(2.54)

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Polarity: As marked on diode body

Mounting position: Any

Case

ꢀ

Doubler

Tandem Polarity

Suffix "CTD"

Negative

Common Anode

Suffix "CTR"

Positive

Common Cathode

Suffix "CT"

Weight: 2.2 gram approximately

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MUR1220CT

MUR1240CT

MUR1260CT

UNIT

SYMBOL

MUR1220CTR MUR1240CTR MUR1260CTR

MUR1220CTD MUR1240CTD MUR1260CTD

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current TC=100^oC

12.0

100

1.3

IF(AV)

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

IFSM

Maximum Instantaneous Forward Voltage

@ 6.0 A

1.7

0.98

Maximum DC Reverse Current @TJ=25^oC

At Rated DC Blocking Voltage @TJ=125^oC

10.0

250

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Trr

R JC

2.2

Operating Junction and Storage

Temperature Range

-55 to +150

TJ, TSTG

NOTES : (1) Reverse recovery test conditions I^F= 0.5A, I^R= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Page 1/2

http://www.thinkisemi.com/

MUR1220CTR thru MUR1260CTR

FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

FIG.1 - FORWARD CURRENT DERATING CURVE

100

Pulse Width 8.3ms

Single Half-Sire-Wave

(JEDEC Method)

60 Hz Resistive or

Inductive load

100

150

100

CASE TEMPERATURE, ^oC

NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

1000

MUR1220CTR

TJ=125^oC

100

MUR1240CTR

MUR1260CTR

TJ=25^oC

PULSE WIDTH=300uS

1% DUTY CYCLE

0.1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

PERCENT OF RATED PEAK REVERSE VOLTAGE,%

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1000

TJ = 25^oC

f = 1.0 MHZ

Vsig = 50mVp-p

100

0.1

1.0

4.0 10

100

REVERSE VOLTAGE, VOLTS

Page 2/2

http://www.thinkisemi.com/

相关型号：