MUR1660AT [THINKISEMI]
16 Ampere Heatsink Common Anode Fast Recovery Half Bridge Rectifiers;
| 型号： | MUR1660AT |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16 Ampere Heatsink Common Anode Fast Recovery Half Bridge Rectifiers |
| 文件： | 总2页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR1620AT thru MUR1660AT
MUR1620AT/MUR1640AT/MUR1660AT
Pb Free Plating Product
16 Ampere Heatsink Common Anode Fast Recovery Half Bridge Rectifiers
TO-220AB
Unit : inch (mm)
Features
.419(10.66)
.196(5.00)
.387(9.85)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Latest GPP technology with super fast recovery time
.163(4.16)
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-220AB
.1(2.54)
.1(2.54)
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Doubler
Negative
Series
Tandem Polarity Tandem Polarity
Suffix "ST" Suffix "DT"
Positive
Common Cathode Common Anode
Suffix "CT" Suffix "AT"
Weight: 2.2 gram approximately
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25o
ambient temperature unless otherwise specified.
C
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
MUR1620AT MUR1640AT MUR1660AT
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
200
140
200
400
280
400
600
420
600
V
Maximum DC Blocking Voltage
V
DC
Maximum Average Forward Rectified
16.0
A
A
V
IF(AV)
Current T
C
=100oC
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
I
FSM
175
150
Maximum Instantaneous Forward Voltage
@ 8.0 A
V
F
0.98
1.3
1.7
Maximum DC Reverse Current @T
At Rated DC Blocking Voltage @T
J
=25oC
uA
uA
nS
5.0
100
I
R
J
=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
35
90
pF
C
J
o
R
JC
2.2
C/W
Operating Junction and Storage
Temperature Range
oC
-55 to + 150
T
J
, TSTG
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
MUR1620AT thru MUR1660AT
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
16
13
10
8
200
175
150
125
100
75
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
6
50
4
25
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, oC
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
80
MUR1620AT
TJ=125oC
MUR1640AT
100
8
10
TJ=25oC
MUR1660AT
0.1
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/
相关型号：
MUR1660CT
快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。
SIRECTIFIER
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