MURF3040CTR [THINKISEMI]
30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers;
| 型号： | MURF3040CTR |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers |
| 文件： | 总2页 (文件大小：761K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MURF3020CTR thru MURF3060CTR
MURF3020CTR/MURF3040CTR/MURF3060CTR
Pb Free Plating Product
30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers
ITO-220AB/TO-220F-3L
Unit : inch (mm)
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency
Low forward voltage drop
High current capability
.189(4.8)
.406(10.3)
.165(4.2)
.381(9.7)
.134(3.4)
.130(3.3)
.118(3.0)
.114(2.9)
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
(2.55)
.1
ꢀ
ꢀ
ꢀ
Case: ITO-220AB full plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
(2.55)
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
Doubler
Tandem Polarity Tandem Polarity
Suffix "CTD" Suffix "CTS"
Series
Negative
Common Cathode Common Anode
Suffix "CT" Suffix "CTR"
Positive
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
℃
Rating at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
MURF3020CTR MURF3040CTR MURF3060CTR
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
200
140
200
400
280
400
600
420
600
V
Maximum DC Blocking Voltage
V
DC
Maximum Average Forward Rectified
30.0
300
1.3
A
A
V
IF(AV)
℃
(Total Device 2x15A=30A)
Current TC
=125
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
I
FSM
Maximum Instantaneous Forward Voltage
V
F
0.98
1.7
(Per Diode/Per Leg)
@ 15A
5.0
100
μA
μA
Maximum DC Reverse Current @T
At Rated DC Blocking Voltage @T
J
=25
℃
℃
I
R
J
=125
nS
pF
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
35-50
150
C
J
R
JC
2.0
℃
/W
Operating Junction and Storage
Temperature Range
-55 to + 150
℃
T , TSTG
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
MURF3020CTR thru MURF3060CTR
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
30
25
20
15
10
5
300
250
200
150
100
50
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
LEAD TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
150
TJ=125oC
10
1
MURF3040CTR
MURF3020CTR
15
MURF3060CTR
1.0
0.1
TJ=25oC
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
.
.
.
Page 2/2
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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