P50N06C [THINKISEMI]

50A,60V Heatsink Planar N-Channel Power MOSFETs;


型号：	P50N06C
厂家：	Thinki Semiconductor Co., Ltd.
描述：	50A,60V Heatsink Planar N-Channel Power MOSFETs
文件：	总7页 (文件大小：1482K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

P50N06C

Pb Free Plating Product

50A,60V Heatsink Planar N-Channel Power MOSFETs

Features

2. Drain

{

•

50A, 60V, R

= 0.022Ω @V = 10 V

DS(on) GS

= 60V

DSS

Low gate charge ( typical 31 nC)

Low Crss ( typical 65 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

= 0.022 ohm

◀

▲

DS(ON)

●

{

1. Gate

I = 50A

{

3. Source

175°C maximum junction temperature rating

TO-220W-SQ

General Description

This N-channel enhancement mode field-effect power transistor

using THINKI Semiconductor advanced planar stripe, DMOS technol-

ogy intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged

avalanche characteristics. The TO-220W-SQ pkg is well suited for

adaptor power units,amplifiers,inverters and SMPS application.

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

P50N06C

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

35.4

200

± 25

490

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

7.0

Power Dissipation (T = 25°C)

120

0.8

- Derate above 25°C

Operating and Storage Temperature Range

W/°C

°C

T , T

-55 to +175

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

1.24

Units

°C/W

θJC

θCS

θJA

0.5

62.5

Page 1/7

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Rev.09T

P50N06C

Electrical Characteristics

T = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

= 0 V, I = 250 µA

GS D

Drain-Source Breakdown Voltage

DSS

∆BV

Breakdown Voltage Temperature

Coefficient

DSS

= 250 µA, Referenced to 25°C

0.06

V/°C

∆T

= 60 V, V = 0 V

µA

DSS

Zero Gate Voltage Drain Current

= 48 V, T = 150°C

= 25 V, V = 0 V

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

100

-100

GSSF

= -25 V, V = 0 V

GSSR

On Characteristics

= V , I = 250 µA

Gate Threshold Voltage

2.0

4.0

Ω

GS(th)

Static Drain-Source

On-Resistance

DS(on)

=10V,I =25A

0.018 0.022

= 25 V, I = 25 A

(Note 4)

Forward Transconductance

Dynamic Characteristics

Input Capacitance

1180

440

1540

580

iss

= 25 V, V = 0 V,

Output Capacitance

oss

rss

f = 1.0 MHz

Reverse Transfer Capacitance

Switching Characteristics

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

105

220

130

140

d(on)

= 30 V, I = 25 A,

= 25 Ω

d(off)

(Note 4, 5)

= 48 V, I = 50 A,

= 10 V

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

200

1.5

Maximum Pulsed Drain-Source Diode Forward Current

= 0 V, I = 50 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

= 0 V, I = 50 A,

dI / dt = 100 A/µs

(Note 4)

Reverse Recovery Charge

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 230µH, I = 50A, V = 25V, R = 25 Ω, Starting T = 25°C

3. I ≤ 50A, di/dt ≤ 300A/µs, V

≤ BV Starting T = 25°C

DSS, J

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Page 2/7

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Rev.09T

P50N06C

Typical Characteristics

Top :

15.0^GV^S

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

10²

10¹

10⁰

10²

10¹

10⁰

Bottom: 4.5V

℃

175

℃

※

Notes :

※

Note :

1. V = 30V

1. 250 s Pulse Test

2. T_C= 25

^DSμ

2. 250 s Pulse Test

℃

-55

-1

10⁰

10¹

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

0.05

0.04

0.03

0.02

0.01

0.00

10²

10¹

10⁰

V_GS= 10V

V_GS= 20V

※

Notes :

℃

175

1. V = 0V

2. 250 s Pulse Test

^GSμ

※

℃

Note : T = 25

100

150

200

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

I_D, Drain Current [A]

V , Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

3000

_iss= C_gs+ C_gd(C_ds= shorted)

_oss= C + C

_rss= C^ds

2500

2000

1500

1000

500

V_DS= 30V

V_DS= 48V

oss

iss

※

Notes :

1. V_GS= 0 V

2. f = 1 MHz

rss

※

Note : I_D= 50A

-1

10⁰

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

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Rev.09T

P50N06C

Typical Characteristics (Continued)

1.2

1.1

1.0

2.5

2.0

1.5

1.0

0.5

0.0

※

Notes :

0.9

0.8

1. V_GS= 0 V

2. I_D= 250

※

Notes :

1. V_GS= 10 V

2. I_D= 25 A

-100

-50

100

150

200

-100

-50

100

150

200

T, Junction Temperature [^oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

10³

10²

10¹

10⁰

OperationinThisArea

is Limited by R _DS(on)

100

1 ms

10 ms

※

Notes :

1. T_C= 25 ^o

2. T = 175 ^o

3. Single Pulse

10^-1

10⁰

10¹

10²

100

125

150

175

℃

T_C, Case Temperature [

]

V_DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

1 0 ⁰

D = 0 .5

※

0 .2

0 .1

N o t e s

1 . Z _θ_{J C}(t )

2 . D u t y Fa c t o r , D = t ₁/t ₂

℃

/W M a x.

1 .2 4

3 . T _{J M}

T_C

P _{D M}* Z _θ_{J C}(t )

1 0 ^-1

0 .0 5

P_DM

0 .0 2

t₁

0 .0 1

t₂

s in g le p u ls e

1 0 ^-2

1 0 ^-5

1 0 ^-4

1 0 ^-3

1 0 ^-2

1 0 ^-1

1 0 ⁰

1 0 ¹

t₁

, S q u a r e W a v e P u ls e D u r a tio n [s e c ]

Figure 11. Transient Thermal Response Curve

Page 4/7

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Rev.09T

P50N06C

Gate Charge Test Circuit & Waveform

V_GS

Same Type

50KΩ

as DUT

Q_g

12V

200nF

10V

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

3mA

Charge

Resistive Switching Test Circuit & Waveforms

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS- V_DD

----

E_AS

L I_AS

V_DS

I _D

BV_DSS

I_AS

R_G

V_DD

I_D(t)

V_DD

V_DS(t)

DUT

10V

t _p

Time

Page 5/7

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Rev.09T

P50N06C

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

Page 6/7

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Rev.09T

P50N06C

TO-220W-SQ MECHANICAL DATA

inch

TYP.

DIM.

MIN.

4.40

1.23

2.40

TYP.

MAX.

4.60

1.32

2.72

MIN.

0.173

0.048

0.094

MAX.

0.181

0.051

0.107

1.27

0.050

0.49

0.61

1.14

4.95

2.4

0.70

0.88

1.70

5.15

2.7

0.019

0.024

0.044

0.194

0.094

0.393

0.027

0.034

0.067

0.203

0.106

0.409

DIA.

10.0

10.40

16.4

0.645

13.0

2.65

15.25

6.2

14.0

2.95

15.75

6.6

0.511

0.104

0.600

0.244

0.137

0.147

0.551

0.116

0.620

0.260

0.154

0.151

3.5

3.93

3.85

3.75

Dia.

Page 7/7

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Rev.09T

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