SDURF1660CTR [THINKISEMI]

16Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers;
SDURF1660CTR
型号: SDURF1660CTR
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

16Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

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中文:  中文翻译
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SDURF1620CTD thru SDURF1660CTD  
SDURF1620CTD/SDURF1630CTD/SDURF1640CTD/SDURF1660CTD  
Pb Free Plating Product  
16Ampere Insulated Dual Tandem Polarity Ultra Fast Recovery Rectifiers  
ITO-220AB/TO-22F-3L  
Unit : inch (mm)  
Features  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.189(4.8)  
.406(10.3)  
.165(4.2)  
.381(9.7)  
.134(3.4)  
.130(3.3)  
.118(3.0)  
.114(2.9)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
Case: ITO-220AB full plastic isolated package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
(2.55)  
Case  
Case  
Doubler  
Tandem Polarity  
Suffix "CTD"  
Case  
Case  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.0 gram approximately  
Series  
Common Cathode Common Anode Tandem Polarity  
Negative  
Positive  
Suffix "CT"  
Suffix "CTR"  
Suffix "CTS"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25o  
ambient temperature unless otherwise specified.  
C
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SDURF1630CTD  
UNIT  
SYMBOL SDURF1620CTD  
SDURF1660CTD  
SDURF1640CTD  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
16.0  
A
A
V
IF(AV)  
o
(Total Device 2x8A=16A)  
Current T  
C
=100 C  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
175  
150  
Maximum Instantaneous Forward Voltage  
V
F
0.98  
1.3  
1.7  
(Per Diode/Per Leg)  
@ 8.0 A  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
=25oC  
5.0  
100  
μA  
μA  
J
I
R
J
=125oC  
nS  
pF  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
90  
C
J
R
JC  
3.0  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to + 150  
T , TSTG  
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.09T  
© 1995 Thinki Semiconductor Co., Ltd.  
SDURF1620CTD thru SDURF1660CTD  
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
FIG.1 - FORWARD CURRENT DERATING CURVE  
16  
13  
10  
8
200  
175  
150  
125  
100  
75  
Pulse Width 8.3ms  
Single Half-Sire-Wave  
(JEDEC Method)  
6
50  
4
25  
60 Hz Resistive or  
Inductive load  
0
0
0
50  
100  
150  
1
10  
100  
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE, oC  
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
1000  
80  
SDURF1620CTD  
TJ=125oC  
SDURF1630CTD/SDURF1640CTD  
100  
8
10  
TJ=25oC  
SDURF1660CTD  
0.1  
1
TJ=25oC  
PULSE WIDTH=300uS  
1% DUTY CYCLE  
0.01  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
1000  
TJ = 25oC  
f = 1.0 MHZ  
Vsig = 50mVp-p  
100  
10  
0.1  
1.0  
4.0 10  
100  
REVERSE VOLTAGE, VOLTS  
Page 2/2  
Rev.09T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  

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