UF1601CT [THINKISEMI]
16Ampere Heat Sink Dual Common Cathode High Efficiency Rectifiers;
| 型号： | UF1601CT |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16Ampere Heat Sink Dual Common Cathode High Efficiency Rectifiers 二极管 瞄准线 功效 局域网 可编程只读存储器 |
| 文件： | 总3页 (文件大小：3778K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FFPF60SA60DS
FFPF60SA60DS
Pb Free Plating Product
16Amperes,600Volts Insulated Dual Series Connection Ultra Fast Soft Recovery Rectifiers
ITO-220AB/TO-220F-3L
Unit : inch (mm)
APPLICATION
.189(4.8)
.406(10.3)
.165(4.2)
.381(9.7)
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
.134(3.4)
.130(3.3)
.114(2.9)
.118(3.0)
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
PRODUCT FEATURE
· Ultrafast Recovery Time
.1
(2.55)
.1
(2.55)
· Soft Recovery Characteristics
· 150 Operating Junction Temperature
℃
Case
Case
Case
Case
· Low Forward Voltage
Doubler
Tandem Polarity Tandem Polarity
Suffix "DD" Suffix "DS"
Series
Negative
Common Cathode Common Anode
Suffix "DN" Suffix "DP"
Positive
· High Surge Current Capability
· Low Leakage Current
GENERAL DESCRIPTION
FFPF60SA60DS using ThinkiSemi lastest FRED FAB process(planar passivation pellet) with ultrafast soft recovery characteristics.
Absolute Maximum Ratings (per leg) T =25°C unless otherwise noted
C
Symbol
Parameter
Value
600
600
600
8
Units
V
V
V
Peak Repetitive Reverse Voltage
V
V
V
A
A
RRM
Working Peak Reverse Voltage
DC Blocking Voltage
RWM
R
I
I
Average Rectified Forward Current
Non-repetitive Peak Surge Current
@ T = 95 °C
C
F(AV)
FSM
80
60Hz Single Half-Sine Wave
P
Power Dissipation
26
20
W
mJ
°C
D
W
Avalanche Energy (1A, 40mH)
Operating Junction and Storage Temperature
AVL
T
T
- 65 to +150
J, STG
Thermal Characteristics
Symbol
Parameter
Value
3.125
62.5
Units
°C/W
°C/W
R
R
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
θJC
θJA
Page 1/3
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
FFPF60SA60DS
Electrical Characteristics (per leg) T =25 °C unless otherwise noted
C
Symbol
Parameter
Min.
Typ.
Max.
Units
V
Maximum Instantaneous Forward Voltage
V
FM
*
I
I
= 8A
= 8A
T
T
= 25 °C
= 125 °C
-
-
2.0
1.6
2.4
2.0
F
F
C
C
I
Maximum Instantaneous Reverse Current
@ rated V
µA
RM
*
T
T
= 25 °C
= 125 °C
-
-
-
-
100
1000
R
C
C
t
t
Maximum Reverse Recovery Time
(I =1A, di/dt = 100A/µs, V = 30V)
-
-
25
30
ns
ns
rr
F
R
Maximum Reverse Recovery Time
-
-
rr
(I =8A, di/dt = 100A/µs, V = 30V)
F
R
t
I
Q
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
-
-
-
39
2
39
-
-
-
ns
A
nC
rr
rr
rr
(I =8A, di/dt = 200A/µs, V = 390V)
F
R
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Typical Characteristics
10
TC = 150oC
TC = 150oC
100
10
1
TC = 25oC
TC = 125oC
TC = 100oC
TC = 125oC
TC = 100oC
1
TC = 25oC
0.1
0.1
0.001
0
0.5
1.0
1.5
2.0
2.5
50 100 150 200 250 300 350 400 450 500 550 600
Forward Voltage , VF [V]
Reverse Voltage , VR [V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
Figure 2. Typical Reverse Current
vs. Reverse Voltage
200
44
42
40
38
36
34
32
30
28
26
IF = 8A
Tc = 25oC
Typical Capacitance
at 0V = 169.3 pF
150
100
50
0.1
1
10
100
100
200
300
400
500 600
Reverse Voltage , VR [V]
di/dt [A/µs]
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. di/dt
Page 2/3
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
FFPF60SA60DS
Typical Characteristics (Continued)
10
6
IF = 8A
TC = 25oC
5
4
3
2
1
0
5
0
60
80
100
120
140
160
100
200
300
400
500 600
Case Temperature , TC [oC]
di/dt [A/µs]
Figure 5. Typical Reverse Recovery Current
vs. di/dt
Figure 6. Forward Curent Derating Curve
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
dIF
trr
IF
dt
ta
tb
DUT
CURRENT
SENSE
0
RG
+
-
VDD
0.25 IRM
IRM
VGE
MOSFET
t1
t2
Figure 7. t Test Circuit
Figure 8. t Waveforms and Definitions
rr
rr
I = 1A
L = 40mH
R < 0.1Ω
V
E
= 50V
DD
2
= 1/2LI [V
/(V
- V )]
AVL
R(AVL)
R(AVL) DD
Q
= IGBT (BV
> DUT V
)
1
CES
R(AVL)
V
L
R
AVL
+
CURRENT
SENSE
I
I
L
L
Q1
V
DD
I
V
DUT
-
t
t
t
2
t
0
1
Figure 9. Avalanche Energy Test Circuit
Figure 10. Avalanche Current and Voltage Waveforms
Page 3/3
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
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