1N459AT50A [TI]
0.2A, 200V, SILICON, SIGNAL DIODE, DO-35;
| 型号： | 1N459AT50A |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 0.2A, 200V, SILICON, SIGNAL DIODE, DO-35 |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
N
1N/FDLL 456/A - 1N/FDLL 459/A
COLOR BAND MARKING
DEVICE 1ST BAND 2ND BAND
FDLL456
FDLL456A BROWN
BROWN
WHITE
WHITE
BLACK
BLACK
BROWN
BROWN
RED
FDLL457 RED
FDLL457A RED
FDLL458 RED
FDLL458A RED
RED
FDLL459A RED
LL-34
FDLL459
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
DO-35
RED
High Conductance Low Leakage Diode
Sourced from Process 1M.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
WIV
Working Inverse Voltage
456/A
457/A
458/A
459/A
25
60
125
175
200
V
V
V
V
mA
IO
Average Rectified Current
DC Forward Current
IF
500
600
mA
mA
Recurrent Peak Forward Current
if
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
if(surge)
1.0
4.0
-65 to +200
A
A
°C
Tstg
TJ
Operating Junction Temperature
175
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
1N / FDLL 456/A - 459/A
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
500
3.33
300
mW
mW/°C
°C/W
Rθ
JA
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
BV
Breakdown Voltage
456/A
457/A
458/A
459/A
I = 100
IR = 100 µA
IR = 100 µA
IR = 100 µA
A
30
70
150
V
V
V
V
µ
R
200
IR
Reverse Current
456/A
457/A
458/A
459/A
VR = 25 V
VR = 25 V, TA = 150°C
VR = 60 V
VR = 60 V, TA = 150°C
VR = 125 V
VR = 125 V, TA = 150°C
VR = 175 V
VR = 175 V, TA = 150°C
IF = 40 mA
IF = 10 mA
IF = 7.0 mA
IF = 3.0 mA
25
5.0
25
5.0
25
5.0
25
5.0
nA
µA
nA
µA
nA
µA
nA
µA
V
V
V
V
V
VF
Forward Voltage
456
457
458
1.0
1.0
1.0
1.0
1.0
6.0
459
456/A-459/A
IF = 100 mA
VR = 0, f = 1.0 MHz
CO
Diode Capacitance
pF
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