5962R0050101V9A [TI]
耐辐射 QMLV、2.5V 并联电压基准 | Y | 0 | -55 to 125;
| 型号： | 5962R0050101V9A |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 耐辐射 QMLV、2.5V 并联电压基准 | Y | 0 | -55 to 125 |
| 文件： | 总17页 (文件大小：423K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM136A-2.5QML, LM136A-2.5QML-SP
www.ti.com
SNOSAM3E –JULY 2007–REVISED APPRIL 2013
LM136A-2.5QML 2.5V Reference Diode
Check for Samples: LM136A-2.5QML, LM136A-2.5QML-SP
1
FEATURES
DESCRIPTION
The LM136A-2.5QML integrated circuit is a precision
2
•
Available with Radiation Specification
2.5V shunt regulator diode. This monolithic IC voltage
reference operates as a low-temperature-coefficient
2.5V zener with 0.2Ω dynamic impedance. A third
terminal on the LM136A-2.5QML allows the reference
voltage and temperature coefficient to be trimmed
easily.
–
–
Total Ionizing Dose 100 krad(Si)
ELDRS Free 100 krad(Si)
•
•
•
•
•
•
Low Temperature Coefficient
Wide Operating Current of 400 μA to 10 mA
Specified Temperature Stability
Easily Trimmed for Minimum Temperature Drift
Fast Turn-on
The LM136A-2.5QML is useful as a precision 2.5V
low voltage reference for digital voltmeters, power
supplies or op amp circuitry. The 2.5V make it
convenient to obtain a stable reference from 5V logic
supplies. Further, since the LM136A-2.5QML
operates as a shunt regulator, it can be used as
either a positive or negative voltage reference.
3–Lead Transistor Package
Connection Diagram
Bottom View
Figure 1. TO Package
See Package Number NDV0003H
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007–2013, Texas Instruments Incorporated
LM136A-2.5QML, LM136A-2.5QML-SP
SNOSAM3E –JULY 2007–REVISED APPRIL 2013
www.ti.com
Schematic Diagram
Typical Applications
Figure 2. 2.5V Reference
†Adjust to 2.490V
*Any silicon signal diode
Figure 3. 2.5V Reference with Minimum
Temperature Coefficient
2
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Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP
LM136A-2.5QML, LM136A-2.5QML-SP
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SNOSAM3E –JULY 2007–REVISED APPRIL 2013
Figure 4. Wide Input Range Reference
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Copyright © 2007–2013, Texas Instruments Incorporated
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3
Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP
LM136A-2.5QML, LM136A-2.5QML-SP
SNOSAM3E –JULY 2007–REVISED APPRIL 2013
www.ti.com
Absolute Maximum Ratings(1)
Reverse Current
15 mA
Forward Current
10 mA
−60°C ≤ TA ≤ +150°C
−55°C ≤ TA ≤ +125°C
+150°C
Storage Temperature
Operating Temperature Range(2)
Maximum Junction Temperature (TJ)(2)
Lead Temperature (Soldering 10 seconds)
300°C
Thermal Resistance
θJA
Still Air Flow
354°C/W
500LF/Min Air Flow
77°C/W
θJC
46°C/W
ESD Rating(3)
1,000V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
(2) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
(3) Human body model, 1.5KΩ in series with 100pF.
Quality Conformance Inspection
Mil-Std-883, Method 5005 - Group A
Subgroup
Description
Static tests at
Temp°C
+25
1
2
Static tests at
+125
-55
3
Static tests at
4
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
Settling time at
Settling time at
Settling time at
+25
5
+125
-55
6
7
+25
8A
8B
9
+125
-55
+25
10
11
12
13
14
+125
-55
+25
+125
-55
4
Submit Documentation Feedback
Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP
LM136A-2.5QML, LM136A-2.5QML-SP
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SNOSAM3E –JULY 2007–REVISED APPRIL 2013
LM136A-2.5QML Electrical Characteristics DC Parameters(1)(2)
The following conditions apply, unless otherwise specified. IR = 1mA
Sub-
Parameter
Test Conditions
VAdj = 0.7V
Notes
Min Max
Unit
groups
1, 2, 3
1
IAdj
Adjust Current
-125 +125
6.0
µA
mV
mV
V
ΔVZ
Delta Zener Voltage
0.4mA ≤ IZ ≤ 10 mA
10
2, 3
1
2.46 2.51
5
5
VAdj = Open
2.44 2.54
2.39 2.49
2.29 2.49
2.49 2.69
0.6
V
V
2, 3
1
VZ
Zener Voltage
VAdj = 0.7V
VAdj = 1.9V
V
2, 3
1, 2, 3
1
V
See(3)
See(3)
Ω
ZRD
Reverse Dynamic Impedance
Temperature Stability
1.0
Ω
2, 3
2, 3
VStab
VZ = Adjusted to 2.490V
18
mV
(1) Pre and post irradiation limits are identical to those listed under DC electrical characteristics. These parts may be dose rate sensitive in
a space environment and may demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are
specified only for the conditions as specified in Mil-Std-883, Method 1019.
(2) Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no
enhanced low dose rate sensitivity (ELDRS) effect.
(3) Parameter tested go-no-go only.
LM136A-2.5QML Electrical Characteristics DC Drift Parameters(1)(2)
Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only.
Sub-
groups
Parameter
Test Conditions
Notes
Min Max
Unit
VAdj = Open
−10
−10
−10
+10
+10
+10
mV
mV
mV
1
1
1
VZ
Zener Voltage
VAdj = 0.7V
VAdj = 1.9V
(1) Pre and post irradiation limits are identical to those listed under DC electrical characteristics. These parts may be dose rate sensitive in
a space environment and may demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are
specified only for the conditions as specified in Mil-Std-883, Method 1019.
(2) Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no
enhanced low dose rate sensitivity (ELDRS) effect.
Copyright © 2007–2013, Texas Instruments Incorporated
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5
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LM136A-2.5QML, LM136A-2.5QML-SP
SNOSAM3E –JULY 2007–REVISED APPRIL 2013
www.ti.com
Typical Performance Characteristics
Reverse Voltage Change
Zener Noise Voltage
Figure 5.
Figure 6.
Dynamic Impedance
Response Time
Figure 7.
Figure 8.
Reverse Characteristics
Forward Characteristics
Figure 9.
Figure 10.
6
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Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP
LM136A-2.5QML, LM136A-2.5QML-SP
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SNOSAM3E –JULY 2007–REVISED APPRIL 2013
Typical Performance Characteristics (continued)
Temperature Drift
Figure 11.
Copyright © 2007–2013, Texas Instruments Incorporated
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LM136A-2.5QML, LM136A-2.5QML-SP
SNOSAM3E –JULY 2007–REVISED APPRIL 2013
www.ti.com
APPLICATION HINTS
The LM136 voltage reference is much easier to use than ordinary zener diodes. It's low impedance and wide
operating current range simplify biasing in almost any circuit. Further, either the breakdown voltage or the
temperature coefficient can be adjusted to optimize circuit performance.
Figure 12 shows an LM136 with a 10k potentiometer for adjusting the reverse breakdown voltage. With the
addition of R1 the breakdown voltage can be adjusted without affecting the temperature coefficient of the device.
The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer
circuitry.
If minimum temperature coefficient is desired, two diodes can be added in series with the adjustment
potentiometer as shown in Figure 13. When the device is adjusted to 2.490V the temperature coefficient is
minimized. Almost any silicon signal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457.
For proper temperature compensation the diodes should be in the same thermal environment as the LM136. It is
usually sufficient to mount the diodes near the LM136 on the printed circuit board. The absolute resistance of R1
is not critical and any value from 2k to 20k will work.
Figure 12. LM136 With Pot for Adjustment
of Breakdown Voltage
(Trim Range = ±120 mV typical)
Figure 13. Temperature Coefficient Adjustment
(Trim Range = ±70 mV typical)
8
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Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP
LM136A-2.5QML, LM136A-2.5QML-SP
www.ti.com
SNOSAM3E –JULY 2007–REVISED APPRIL 2013
*L1 60 turns #16 wire on Arnold Core A-254168-2
†Efficiency ≈ 80%
Figure 14. Low Cost 2 Amp Switching Regulator†
Figure 15. Precision Power Regulator with Low Temperature Coefficient
Figure 16. 5V Crowbar
Copyright © 2007–2013, Texas Instruments Incorporated
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9
Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP
LM136A-2.5QML, LM136A-2.5QML-SP
SNOSAM3E –JULY 2007–REVISED APPRIL 2013
www.ti.com
*Does not affect temperature coefficient
Figure 17. Trimmed 2.5V Reference with
Temperature Coefficient Independent
of Breakdown Voltage
Figure 18. Adjustable Shunt Regulator
Figure 19. Linear Ohmmeter
10
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Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP
LM136A-2.5QML, LM136A-2.5QML-SP
www.ti.com
SNOSAM3E –JULY 2007–REVISED APPRIL 2013
Figure 20. Op Amp with Output Clamped
Figure 21. Bipolar Output Reference
Figure 22. 2.5V Square Wave Calibrator
Copyright © 2007–2013, Texas Instruments Incorporated
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11
Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP
LM136A-2.5QML, LM136A-2.5QML-SP
SNOSAM3E –JULY 2007–REVISED APPRIL 2013
www.ti.com
Figure 23. 5V Buffered Reference
Figure 24. Low Noise Buffered Reference
12
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Copyright © 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP
LM136A-2.5QML, LM136A-2.5QML-SP
www.ti.com
SNOSAM3E –JULY 2007–REVISED APPRIL 2013
REVISION HISTORY
Date Released
Revision
Section
Changes
07/06/07
A
New Release, Corporate format
2 MDS datasheets converted into one corporate
datasheet format. MNLM136–2.5–X Rev 0A0 and
MNLM136A-2.5–X-RH. The ELDRS Part has also
been added. Rev. 0E0 will be archived.
10/16/2010
B
Data Sheet Title, General Description, Order Update with current device information and format.
Information, Electrical Characteristics,
Application Hints
Removed all references to the LM136-2.5 Non “A”
package NSID no longer offered. Added Die NSID's to
data sheet. Revision A will be Archived.
Changes from Revision D (April 2013) to Revision E
Page
•
Changed layout of National Data Sheet to TI format .......................................................................................................... 12
Copyright © 2007–2013, Texas Instruments Incorporated
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PACKAGE OPTION ADDENDUM
www.ti.com
23-Jan-2015
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(6)
(3)
(4/5)
5962R0050101V9A
ACTIVE
DIESALE
Y
0
40
Green (RoHS
& no Sb/Br)
Call TI
Level-1-NA-UNLIM
-55 to 125
5962R0050101VXA
5962R0050102V9A
ACTIVE
ACTIVE
TO
NDV
Y
3
0
20
TBD
Call TI
Call TI
Call TI
-55 to 125
-55 to 125
R0050101VXA Q
DIESALE
Green (RoHS
& no Sb/Br)
Level-1-NA-UNLIM
5962R0050102VXA
LM136-2.5 MDR
ACTIVE
ACTIVE
TO
NDV
Y
3
0
20
40
TBD
Call TI
Call TI
Call TI
-55 to 125
-55 to 125
R0050102VXA Q
DIESALE
Green (RoHS
& no Sb/Br)
Level-1-NA-UNLIM
LM136AH-2.5/883
LM136AH-2.5RLQV
LM136AH-2.5RQV
ACTIVE
ACTIVE
ACTIVE
TO
TO
TO
NDV
NDV
NDV
3
3
3
20
20
20
TBD
TBD
TBD
Call TI
Call TI
Call TI
Call TI
Call TI
Call TI
-55 to 125
-55 to 125
-55 to 125
LM136A-2.5 Q
R0050102VXA Q
R0050101VXA Q
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
23-Jan-2015
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LM136A-2.5QML, LM136A-2.5QML-SP :
Military: LM136A-2.5QML
•
Space: LM136A-2.5QML-SP
•
NOTE: Qualified Version Definitions:
Military - QML certified for Military and Defense Applications
•
Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application
•
Addendum-Page 2
MECHANICAL DATA
NDV0003H
H03H (Rev F)
www.ti.com
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