74CB3Q3244DGVRG4 [TI]

CB3Q/3VH/3C/2B SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, PDSO20, GREEN, PLASTIC, TVSOP-20;
74CB3Q3244DGVRG4
型号: 74CB3Q3244DGVRG4
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

CB3Q/3VH/3C/2B SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, PDSO20, GREEN, PLASTIC, TVSOP-20

驱动 光电二极管 输出元件 逻辑集成电路 电视
文件: 总21页 (文件大小:1175K)
中文:  中文翻译
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ꢀꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢆ ꢈꢃꢃ  
ꢉ ꢊꢅꢋ ꢌ ꢍ ꢎꢌ ꢅꢏ ꢀ ꢀ ꢐꢋ ꢌꢄ ꢑ  
ꢗꢐꢊ  
SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004  
D
D
D
High-Bandwidth Data Path  
(Up To 500 MHz )  
D
D
Data and Control Inputs Provide  
Undershoot Clamp Diodes  
5-V-Tolerant I/Os with Device Powered Up  
or Powered Down  
Low Power Consumption  
(I  
= 0.7 mA Typical)  
CC  
Low and Flat ON-State Resistance (r  
)
D
V
Operating Range From 2.3 V to 3.6 V  
on  
CC  
Characteristics Over Operating Range  
(r = 4 Typical)  
D
Data I/Os Support 0- to 5-V Signaling  
Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V,  
5 V)  
on  
D
Rail-to-Rail Switching on Data I/O Ports  
− 0- to 5-V Switching With 3.3-V V  
− 0- to 3.3-V Switching With 2.5-V V  
CC  
CC  
D
D
D
D
Control Inputs Can Be Driven by TTL or  
5-V/3.3-V CMOS Outputs  
D
D
Bidirectional Data Flow, With Near-Zero  
Propagation Delay  
I
Supports Partial-Power-Down Mode  
off  
Operation  
Low Input/Output Capacitance Minimizes  
Loading and Signal Distortion  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
(C  
= 3.5 pF Typical)  
io(OFF)  
ESD Performance Tested Per JESD 22  
− 2000-V Human-Body Model  
(A114-B, Class II)  
D
Fast Switching Frequency  
(f = 20 MHz Max)  
OE  
For additional information regarding the performance  
characteristics of the CB3Q family, refer to the TI  
application report, CBT-C, CB3T, and CB3Q  
Signal-Switch Families, literature number SCDA008.  
− 1000-V Charged-Device Model (C101)  
D
Supports Both Digital and Analog  
Applications: Differential Signal Interface,  
Memory Interleaving, Bus Isolation,  
Low-Distortion Signal Gating  
DB, DBQ, DGV, DW, OR PW PACKAGE  
(TOP VIEW)  
RGY PACKAGE  
(TOP VIEW)  
V
1
2
3
4
5
6
7
8
9
10  
20  
1OE  
1A1  
2B4  
1A2  
2B3  
1A3  
2B2  
1A4  
2B1  
GND  
CC  
19 2OE  
1
20  
18 1B1  
19  
18  
17  
16  
15  
14  
13  
12  
2
3
4
5
6
7
8
9
1A1  
2B4  
1A2  
2B3  
1A3  
2B2  
1A4  
2B1  
2OE  
1B1  
2A4  
1B2  
2A3  
1B3  
2A2  
1B4  
17  
16  
15  
14  
13  
12  
11  
2A4  
1B2  
2A3  
1B3  
2A2  
1B4  
2A1  
10  
11  
description/ordering information  
The SN74CB3Q3244 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage  
of the pass transistor, providing a low and flat ON-state resistance (r ). The low and flat ON-state resistance  
on  
allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The  
device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data  
bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3244 provides an optimized  
interface solution ideally suited for broadband communications, networking, and data-intensive computing  
systems.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
ꢌꢨ  
Copyright 2004, Texas Instruments Incorporated  
ꢤ ꢨ ꢥ ꢤꢝ ꢞꢱ ꢠꢟ ꢣ ꢫꢫ ꢩꢣ ꢡ ꢣ ꢢ ꢨ ꢤ ꢨ ꢡ ꢥ ꢒ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
ꢀ ꢁꢂ ꢃꢄ ꢅ ꢆꢇ ꢆꢈꢃ ꢃ  
ꢉꢊ ꢅꢋ ꢌ ꢍ ꢎꢌ ꢅ ꢏ ꢀ ꢀ ꢐꢋ ꢌ ꢄꢑ  
ꢈꢒ ꢓꢊꢔ ꢕꢆ ꢒ ꢆ ꢊꢔ ꢖ ꢗꢐꢊꢔ ꢗꢖꢌꢘꢙ ꢎ ꢑꢋ ꢙ ꢑꢊꢅ ꢘꢁꢚ ꢐ ꢋꢚꢌ ꢑ ꢅꢏꢀ ꢀꢐ ꢋ ꢌꢄ ꢑ  
SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004  
description/ordering information (continued)  
The SN74CB3Q3244 is organized as two 4-bit bus switches with separate output-enable (1OE, 2OE) inputs.  
It can be used as two 4-bit bus switches or as one 8-bit bus switch. When OE is low, the associated 4-bit bus  
switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When  
OE is high, the associated 4-bit bus switch is OFF, and the high-impedance state exists between the A and B  
ports.  
This device is fully specified for partial-power-down applications using I . The I circuitry prevents damaging  
off  
off  
current backflow through the device when it is powered down. The device has isolation during power off.  
To ensure the high-impedance state during power up or power down, OE should be tied to V through a pullup  
CC  
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.  
ORDERING INFORMATION  
ORDERABLE  
PART NUMBER  
TOP-SIDE  
MARKING  
PACKAGE  
T
A
QFN − RGY  
Tape and reel  
SN74CB3Q3244RGYR  
SN74CB3Q3244DW  
SN74CB3Q3244DWR  
SN74CB3Q3244DBR  
SN74CB3Q3244DBQR  
SN74CB3Q3244PW  
SN74CB3Q3244PWR  
SN74CB3Q3244DGVR  
SN74CB3Q3244GQNR  
BU244  
Tube  
SOIC − DW  
SSOP − DB  
CB3Q3244  
Tape and reel  
Tape and reel  
BU244  
SSOP (QSOP) − DBQ Tape and reel  
Tube  
CB3Q3244  
−40°C to 85°C  
TSSOP − PW  
BU244  
Tape and reel  
TVSOP − DGV  
VFBGA − GQN  
Tape and reel  
Tape and reel  
BU244  
BU244  
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines  
are available at www.ti.com/sc/package.  
GQN PACKAGE  
(TOP VIEW)  
terminal assignments  
1
2
3
4
1
2
3
4
A
B
C
D
E
A
B
C
D
E
1A1  
1A2  
1A3  
1A4  
GND  
1OE  
2A4  
2B3  
2A2  
2B1  
V
2OE  
1B1  
1B2  
1B3  
1B4  
CC  
2B4  
2A3  
2B2  
2A1  
FUNCTION TABLE  
(each 4-bit bus switch)  
INPUT INPUT/OUTPUT  
FUNCTION  
OE  
A
B
Z
L
A port = B port  
Disconnect  
H
2
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SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004  
logic diagram (positive logic)  
2
18  
1A1  
1B1  
SW  
SW  
8
1
12  
1A4  
1OE  
1B4  
11  
9
2A1  
2B1  
SW  
SW  
17  
19  
3
2A4  
2OE  
2B4  
simplified schematic, each FET switch (SW)  
A
B
V
CC  
Charge  
Pump  
EN  
EN is the internal enable signal applied to the switch.  
3
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ꢈꢒ ꢓꢊꢔ ꢕꢆ ꢒ ꢆ ꢊꢔ ꢖ ꢗꢐꢊꢔ ꢗꢖꢌꢘꢙ ꢎ ꢑꢋ ꢙ ꢑꢊꢅ ꢘꢁꢚ ꢐ ꢋꢚꢌ ꢑ ꢅꢏꢀ ꢀꢐ ꢋ ꢌꢄ ꢑ  
SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004  
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)  
Supply voltage range, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 4.6 V  
CC  
Control input voltage range, V (see Notes 1 and 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 7 V  
Switch I/O voltage range, V (see Notes 1, 2, and 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 7 V  
Control input clamp current, I (V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA  
IN  
I/O  
IK IN  
I/O port clamp current, I  
(V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA  
I/OK I/O  
ON-state switch current, I (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 mA  
Continuous current through V  
I/O  
or GND terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA  
CC  
Package thermal impedance, θ (see Note 5): DB package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W  
JA  
(see Note 5): DBQ package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68°C/W  
(see Note 5): DGV package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92°C/W  
(see Note 5): DW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58°C/W  
(see Note 5): GQN package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78°C/W  
(see Note 5): PW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83°C/W  
(see Note 6): RGY package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37°C/W  
Storage temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C  
stg  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTES: 1. All voltages are with respect to ground unless otherwise specified.  
2. The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.  
3. V and V are used to denote specific conditions for V  
I/O  
.
I
O
4. I and I are used to denote specific conditions for I .  
I
O
I/O  
5. The package thermal impedance is calculated in accordance with JESD 51-7.  
6. The package thermal impedance is calculated in accordance with JESD 51-5.  
recommended operating conditions (see Note 7)  
MIN  
2.3  
1.7  
2
MAX  
3.6  
5.5  
5.5  
0.7  
0.8  
5.5  
85  
UNIT  
V
V
Supply voltage  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
= 2.3 V to 2.7 V  
= 2.7 V to 3.6 V  
= 2.3 V to 2.7 V  
= 2.7 V to 3.6 V  
High-level control input voltage  
V
V
IH  
0
V
V
Low-level control input voltage  
IL  
0
Data input/output voltage  
0
V
I/O  
T
A
Operating free-air temperature  
−40  
°C  
NOTE 7: All unused control inputs of the device must be held at V  
or GND to ensure proper device operation. Refer to the TI application report,  
CC  
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.  
4
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ꢈ ꢒ ꢓꢊꢔ ꢕꢆ ꢒꢆ ꢊꢔ ꢖ ꢗꢐꢊꢔꢗ ꢖꢌꢘꢙ ꢎ ꢑꢋ ꢙꢑ ꢊꢅꢘꢁꢚꢐ ꢋ ꢚꢌ ꢑ ꢅꢏꢀ ꢀ ꢐꢋ ꢌꢄ ꢑ  
SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004  
electrical characteristics over recommended operating free-air temperature range (unless  
otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN TYP  
MAX  
−1.8  
1
UNIT  
V
V
IK  
V
V
= 3.6 V,  
= 3.6 V,  
I = −18 mA  
CC  
I
I
I
I
I
Control inputs  
V
= 0 to 5.5 V  
µA  
IN  
CC  
IN  
V
= 0 to 5.5 V,  
Switch OFF,  
O
V
V
V
= 3.6 V,  
= 0,  
1
1
µA  
µA  
mA  
µA  
OZ  
CC  
CC  
CC  
V = 0,  
I
V
= V  
or GND  
IN  
V = 0  
CC  
V
O
= 0 to 5.5 V,  
= 0,  
off  
I
I
I/O  
= 3.6 V,  
V
IN  
= V  
or GND  
0.7  
2
CC  
CC  
Switch ON or OFF,  
§
I  
CC  
Control inputs  
V
V
= 3.6 V,  
= 3.6 V,  
One input at 3 V,  
Other inputs at V  
CC  
or GND  
30  
0.15  
3.5  
5
CC  
A and B ports open,  
Control input switching at 50% duty cycle  
Per control  
input  
mA/  
MHz  
CC  
I
0.14  
2.5  
CCD  
C
C
Control inputs  
V
= 3.3 V,  
V
= 5.5 V, 3.3 V, or 0  
pF  
in  
CC  
CC  
IN  
Switch OFF,  
= V  
V
= 3.3 V,  
V
V
= 5.5 V, 3.3 V, or 0  
= 5.5 V, 3.3 V, or 0  
3.5  
pF  
io(OFF)  
I/O  
V
or GND,  
or GND,  
IN  
CC  
Switch ON,  
= V  
C
V
V
= 3.3 V,  
= 2.3 V,  
9
11  
pF  
io(ON)  
CC  
I/O  
V
IN  
V = 0,  
CC  
I
O
I
O
I
O
I
O
= 30 mA  
4
5
4
5
8
9
6
8
I
CC  
TYP at V  
CC  
= 2.5 V  
V = 1.7 V,  
I
= −15 mA  
= 30 mA  
= −15 mA  
#
r
on  
V = 0,  
I
V
CC  
= 3 V  
V = 2.4 V,  
I
V
§
#
and I refer to control inputs. V , V , I , and I refer to data pins.  
IN  
IN  
I
O
I
O
All typical values are at V  
= 3.3 V (unless otherwise noted), T = 25°C.  
CC  
For I/O ports, the parameter I  
A
includes the input leakage current.  
OZ  
This is the increase in supply current for each input that is at the specified TTL voltage level, rather than V  
or GND.  
CC  
This parameter specifies the dynamic power-supply current associated with the operating frequency of a single control input (see Figure 2).  
Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is determined by  
the lower of the voltages of the two (A or B) terminals.  
switching characteristics over recommended operating free-air temperature range (unless  
otherwise noted) (see Figure 3)  
V
= 2.5 V  
V
= 3.3 V  
CC  
0.2 V  
CC  
0.3 V  
FROM  
(INPUT)  
TO  
(OUTPUT)  
PARAMETER  
UNIT  
MIN MAX  
MIN MAX  
||  
OE  
f
t
t
t
OE  
A or B  
OE  
A or B  
B or A  
A or B  
A or B  
10  
0.12  
7.1  
20  
0.2  
5.9  
5.8  
MHz  
ns  
k
pd  
en  
dis  
2.8  
1
2.5  
1.5  
ns  
5.8  
ns  
OE  
||  
k
Maximum switching frequency for control input (V > V , V = 5 V, R 1 M, C = 0)  
CC  
The propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified load capacitance,  
when driven by an ideal voltage source (zero output impedance).  
O
I
L
L
5
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SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004  
TYPICAL r  
vs  
on  
V
I
16  
V
= 3.3 V  
= 25°C  
= −15 mA  
CC  
14  
12  
10  
8
T
A
O
I
6
4
2
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
V − V  
3.0  
3.5  
4.0  
4.5  
5.0  
I
Figure 1. Typical r vs V , V  
= 3.3 V and I = −15 mA  
O
on  
I
CC  
TYPICAL I  
vs  
CC  
OE SWITCHING FREQUENCY  
12  
10  
8
V
= 3.3 V  
CC  
= 25°C  
T
A
A and B ports Open  
6
4
One OE Switching  
2
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
OE Switching Frequency − MHz  
Figure 2. Typical I  
vs OE Switching Frequency, V  
= 3.3 V  
CC  
CC  
6
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SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004  
PARAMETER MEASUREMENT INFORMATION  
V
CC  
Input Generator  
V
IN  
50 Ω  
50 Ω  
V
G1  
TEST CIRCUIT  
DUT  
2 × V  
CC  
Open  
Input Generator  
50 Ω  
S1  
R
V
V
O
L
I
GND  
50 Ω  
V
G2  
C
R
L
L
(see Note A)  
S1  
V
I
V
C
R
V
CC  
TEST  
L
L
2.5 V 0.2 V  
3.3 V 0.3 V  
Open  
Open  
500 Ω  
500 Ω  
V
CC  
V
CC  
or GND  
or GND  
30 pF  
50 pF  
t
pd(s)  
2.5 V 0.2 V  
3.3 V 0.3 V  
2 × V  
2 × V  
500 Ω  
500 Ω  
GND  
GND  
30 pF  
50 pF  
0.15 V  
0.3 V  
CC  
CC  
t
/t  
PLZ PZL  
2.5 V 0.2 V  
3.3 V 0.3 V  
GND  
GND  
500 Ω  
500 Ω  
V
CC  
V
CC  
30 pF  
50 pF  
0.15 V  
0.3 V  
t
/t  
PHZ PZH  
Output  
Control  
(V  
V
CC  
V
CC  
/2  
V
CC  
/2  
)
IN  
0 V  
t
t
PLZ  
PZL  
Output  
Waveform 1  
V
V
CC  
Output  
Control  
V
CC  
V
/2  
CC  
S1 at 2 × V  
(see Note B)  
V
V
+ V  
V
CC  
/2  
V
CC  
/2  
CC  
OL  
(V  
IN  
)
OL  
0 V  
t
t
PZH  
PHZ  
t
t
PLH  
PHL  
Output  
Waveform 2  
S1 at GND  
V
OH  
V
OH  
− V  
OH  
V
/2  
Output  
CC  
V
CC  
/2  
V
CC  
/2  
0 V  
(see Note B)  
V
OL  
VOLTAGE WAVEFORMS  
PROPAGATION DELAY TIMES (t  
VOLTAGE WAVEFORMS  
ENABLE AND DISABLE TIMES  
)
pd(s)  
C includes probe and jig capacitance.  
L
NOTES: A.  
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.  
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.  
C. All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, Z = 50 , t 2.5 ns, t 2.5 ns.  
O
r
f
D. The outputs are measured one at a time, with one transition per measurement.  
E.  
F.  
G.  
t
t
t
and t  
and t  
and t  
are the same as t  
are the same as t  
are the same as t  
.
.
PLZ  
PZL  
PLH  
PHZ  
PZH  
PHL  
dis  
en  
. The tpd propagation delay is the calculated RC time constant of the typical ON-state  
pd(s)  
resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance).  
H. All parameters and waveforms are not applicable to all devices.  
Figure 3. Test Circuit and Voltage Waveforms  
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
PACKAGE OPTION ADDENDUM  
www.ti.com  
25-Jul-2013  
PACKAGING INFORMATION  
Orderable Device  
74CB3Q3244DBQRE4  
74CB3Q3244DBQRG4  
74CB3Q3244DGVRE4  
74CB3Q3244DGVRG4  
74CB3Q3244RGYRG4  
SN74CB3Q3244DBQR  
SN74CB3Q3244DGVR  
SN74CB3Q3244PW  
Status Package Type Package Pins Package  
Eco Plan Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
ACTIVE  
SSOP  
SSOP  
DBQ  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
2500  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
CU NIPDAU  
SNAGCU  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
CB3Q3244  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
DBQ  
DGV  
DGV  
RGY  
DBQ  
DGV  
PW  
2500  
2000  
2000  
3000  
2500  
2000  
70  
Green (RoHS  
& no Sb/Br)  
CB3Q3244  
BU244  
BU244  
BU244  
CB3Q3244  
BU244  
BU244  
BU244  
BU244  
BU244  
BU244  
BU244  
BU244  
BU244  
TVSOP  
TVSOP  
VQFN  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
SSOP  
Green (RoHS  
& no Sb/Br)  
TVSOP  
TSSOP  
TSSOP  
TSSOP  
TSSOP  
TSSOP  
TSSOP  
VQFN  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
SN74CB3Q3244PWE4  
SN74CB3Q3244PWG4  
SN74CB3Q3244PWR  
SN74CB3Q3244PWRE4  
SN74CB3Q3244PWRG4  
SN74CB3Q3244RGYR  
SN74CB3Q3244ZQNR  
PW  
70  
Green (RoHS  
& no Sb/Br)  
PW  
70  
Green (RoHS  
& no Sb/Br)  
PW  
2000  
2000  
2000  
3000  
1000  
Green (RoHS  
& no Sb/Br)  
PW  
Green (RoHS  
& no Sb/Br)  
PW  
Green (RoHS  
& no Sb/Br)  
RGY  
ZQN  
Green (RoHS  
& no Sb/Br)  
BGA  
Green (RoHS  
& no Sb/Br)  
MICROSTAR  
JUNIOR  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
25-Jul-2013  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
8-Jul-2013  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
SN74CB3Q3244DBQR  
SSOP  
DBQ  
DGV  
PW  
20  
20  
20  
20  
20  
2500  
2000  
2000  
3000  
1000  
330.0  
330.0  
330.0  
330.0  
330.0  
16.4  
12.4  
16.4  
12.4  
12.4  
6.5  
6.9  
9.0  
5.6  
7.1  
4.8  
4.3  
2.1  
1.6  
1.6  
1.6  
1.6  
8.0  
8.0  
8.0  
8.0  
8.0  
16.0  
12.0  
16.0  
12.0  
12.0  
Q1  
Q1  
Q1  
Q1  
Q1  
SN74CB3Q3244DGVR TVSOP  
SN74CB3Q3244PWR  
SN74CB3Q3244RGYR  
TSSOP  
VQFN  
6.95  
3.8  
RGY  
ZQN  
SN74CB3Q3244ZQNR BGA MI  
3.3  
CROSTA  
R JUNI  
OR  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
8-Jul-2013  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
SN74CB3Q3244DBQR  
SN74CB3Q3244DGVR  
SN74CB3Q3244PWR  
SN74CB3Q3244RGYR  
SSOP  
TVSOP  
TSSOP  
VQFN  
DBQ  
DGV  
PW  
20  
20  
20  
20  
20  
2500  
2000  
2000  
3000  
1000  
367.0  
367.0  
367.0  
367.0  
338.1  
367.0  
367.0  
367.0  
367.0  
338.1  
38.0  
35.0  
38.0  
35.0  
20.6  
RGY  
ZQN  
SN74CB3Q3244ZQNR BGA MICROSTAR  
JUNIOR  
Pack Materials-Page 2  
MECHANICAL DATA  
MPDS006C – FEBRUARY 1996 – REVISED AUGUST 2000  
DGV (R-PDSO-G**)  
PLASTIC SMALL-OUTLINE  
24 PINS SHOWN  
0,23  
0,13  
M
0,07  
0,40  
24  
13  
0,16 NOM  
4,50  
4,30  
6,60  
6,20  
Gage Plane  
0,25  
0°ā8°  
0,75  
1
12  
0,50  
A
Seating Plane  
0,08  
0,15  
0,05  
1,20 MAX  
PINS **  
14  
16  
20  
24  
38  
48  
56  
DIM  
A MAX  
A MIN  
3,70  
3,50  
3,70  
3,50  
5,10  
4,90  
5,10  
4,90  
7,90  
7,70  
9,80  
9,60  
11,40  
11,20  
4073251/E 08/00  
NOTES: A. All linear dimensions are in millimeters.  
B. This drawing is subject to change without notice.  
C. Body dimensions do not include mold flash or protrusion, not to exceed 0,15 per side.  
D. Falls within JEDEC: 24/48 Pins – MO-153  
14/16/20/56 Pins – MO-194  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other  
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest  
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and  
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale  
supplied at the time of order acknowledgment.  
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms  
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary  
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily  
performed.  
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and  
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide  
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TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or  
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information  
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Applications  
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