74CB3Q3244DGVRG4 [TI]
CB3Q/3VH/3C/2B SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, PDSO20, GREEN, PLASTIC, TVSOP-20;型号: | 74CB3Q3244DGVRG4 |
厂家: | TEXAS INSTRUMENTS |
描述: | CB3Q/3VH/3C/2B SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, PDSO20, GREEN, PLASTIC, TVSOP-20 驱动 光电二极管 输出元件 逻辑集成电路 电视 |
文件: | 总21页 (文件大小:1175K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ꢀꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢆ ꢈꢃꢃ
ꢉ ꢊꢅꢋ ꢌ ꢍ ꢎꢌ ꢅꢏ ꢀ ꢀ ꢐꢋ ꢌꢄ ꢑ
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SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004
D
D
D
High-Bandwidth Data Path
(Up To 500 MHz )
D
D
Data and Control Inputs Provide
Undershoot Clamp Diodes
†
5-V-Tolerant I/Os with Device Powered Up
or Powered Down
Low Power Consumption
(I
= 0.7 mA Typical)
CC
Low and Flat ON-State Resistance (r
)
D
V
Operating Range From 2.3 V to 3.6 V
on
CC
Characteristics Over Operating Range
(r = 4 Ω Typical)
D
Data I/Os Support 0- to 5-V Signaling
Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V,
5 V)
on
D
Rail-to-Rail Switching on Data I/O Ports
− 0- to 5-V Switching With 3.3-V V
− 0- to 3.3-V Switching With 2.5-V V
CC
CC
D
D
D
D
Control Inputs Can Be Driven by TTL or
5-V/3.3-V CMOS Outputs
D
D
Bidirectional Data Flow, With Near-Zero
Propagation Delay
I
Supports Partial-Power-Down Mode
off
Operation
Low Input/Output Capacitance Minimizes
Loading and Signal Distortion
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
(C
= 3.5 pF Typical)
io(OFF)
ESD Performance Tested Per JESD 22
− 2000-V Human-Body Model
(A114-B, Class II)
D
Fast Switching Frequency
(f = 20 MHz Max)
OE
†
For additional information regarding the performance
characteristics of the CB3Q family, refer to the TI
application report, CBT-C, CB3T, and CB3Q
Signal-Switch Families, literature number SCDA008.
− 1000-V Charged-Device Model (C101)
D
Supports Both Digital and Analog
Applications: Differential Signal Interface,
Memory Interleaving, Bus Isolation,
Low-Distortion Signal Gating
DB, DBQ, DGV, DW, OR PW PACKAGE
(TOP VIEW)
RGY PACKAGE
(TOP VIEW)
V
1
2
3
4
5
6
7
8
9
10
20
1OE
1A1
2B4
1A2
2B3
1A3
2B2
1A4
2B1
GND
CC
19 2OE
1
20
18 1B1
19
18
17
16
15
14
13
12
2
3
4
5
6
7
8
9
1A1
2B4
1A2
2B3
1A3
2B2
1A4
2B1
2OE
1B1
2A4
1B2
2A3
1B3
2A2
1B4
17
16
15
14
13
12
11
2A4
1B2
2A3
1B3
2A2
1B4
2A1
10
11
description/ordering information
The SN74CB3Q3244 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage
of the pass transistor, providing a low and flat ON-state resistance (r ). The low and flat ON-state resistance
on
allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The
device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data
bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3244 provides an optimized
interface solution ideally suited for broadband communications, networking, and data-intensive computing
systems.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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Copyright 2004, Texas Instruments Incorporated
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ꢤ ꢨ ꢥ ꢤꢝ ꢞꢱ ꢠꢟ ꢣ ꢫꢫ ꢩꢣ ꢡ ꢣ ꢢ ꢨ ꢤ ꢨ ꢡ ꢥ ꢒ
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1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁꢂ ꢃꢄ ꢅ ꢆꢇ ꢆꢈꢃ ꢃ
ꢉꢊ ꢅꢋ ꢌ ꢍ ꢎꢌ ꢅ ꢏ ꢀ ꢀ ꢐꢋ ꢌ ꢄꢑ
ꢈꢒ ꢓꢊꢔ ꢕꢆ ꢒ ꢆ ꢊꢔ ꢖ ꢗꢐꢊꢔ ꢗꢖꢌꢘꢙ ꢎ ꢑꢋ ꢙ ꢑꢊꢅ ꢘꢁꢚ ꢐ ꢋꢚꢌ ꢑ ꢅꢏꢀ ꢀꢐ ꢋ ꢌꢄ ꢑ
SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004
description/ordering information (continued)
The SN74CB3Q3244 is organized as two 4-bit bus switches with separate output-enable (1OE, 2OE) inputs.
It can be used as two 4-bit bus switches or as one 8-bit bus switch. When OE is low, the associated 4-bit bus
switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When
OE is high, the associated 4-bit bus switch is OFF, and the high-impedance state exists between the A and B
ports.
This device is fully specified for partial-power-down applications using I . The I circuitry prevents damaging
off
off
current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to V through a pullup
CC
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
ORDERING INFORMATION
ORDERABLE
PART NUMBER
TOP-SIDE
MARKING
†
PACKAGE
T
A
QFN − RGY
Tape and reel
SN74CB3Q3244RGYR
SN74CB3Q3244DW
SN74CB3Q3244DWR
SN74CB3Q3244DBR
SN74CB3Q3244DBQR
SN74CB3Q3244PW
SN74CB3Q3244PWR
SN74CB3Q3244DGVR
SN74CB3Q3244GQNR
BU244
Tube
SOIC − DW
SSOP − DB
CB3Q3244
Tape and reel
Tape and reel
BU244
SSOP (QSOP) − DBQ Tape and reel
Tube
CB3Q3244
−40°C to 85°C
TSSOP − PW
BU244
Tape and reel
TVSOP − DGV
VFBGA − GQN
Tape and reel
Tape and reel
BU244
BU244
†
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines
are available at www.ti.com/sc/package.
GQN PACKAGE
(TOP VIEW)
terminal assignments
1
2
3
4
1
2
3
4
A
B
C
D
E
A
B
C
D
E
1A1
1A2
1A3
1A4
GND
1OE
2A4
2B3
2A2
2B1
V
2OE
1B1
1B2
1B3
1B4
CC
2B4
2A3
2B2
2A1
FUNCTION TABLE
(each 4-bit bus switch)
INPUT INPUT/OUTPUT
FUNCTION
OE
A
B
Z
L
A port = B port
Disconnect
H
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢆ ꢈꢃꢃ
ꢉ ꢊꢅꢋ ꢌ ꢍ ꢎꢌ ꢅꢏ ꢀ ꢀ ꢐꢋ ꢌꢄ ꢑ
ꢈ ꢒ ꢓꢊꢔ ꢕꢆ ꢒꢆ ꢊꢔ ꢖ ꢗꢐꢊꢔꢗ ꢖꢌꢘꢙ ꢎ ꢑꢋ ꢙꢑ ꢊꢅꢘꢁꢚꢐ ꢋ ꢚꢌ ꢑ ꢅꢏꢀ ꢀ ꢐꢋ ꢌꢄ ꢑ
SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004
logic diagram (positive logic)
2
18
1A1
1B1
SW
SW
8
1
12
1A4
1OE
1B4
11
9
2A1
2B1
SW
SW
17
19
3
2A4
2OE
2B4
simplified schematic, each FET switch (SW)
A
B
V
CC
Charge
Pump
†
EN
†
EN is the internal enable signal applied to the switch.
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁꢂ ꢃꢄ ꢅ ꢆꢇ ꢆꢈꢃ ꢃ
ꢉꢊ ꢅꢋ ꢌ ꢍ ꢎꢌ ꢅ ꢏ ꢀ ꢀ ꢐꢋ ꢌ ꢄꢑ
ꢈꢒ ꢓꢊꢔ ꢕꢆ ꢒ ꢆ ꢊꢔ ꢖ ꢗꢐꢊꢔ ꢗꢖꢌꢘꢙ ꢎ ꢑꢋ ꢙ ꢑꢊꢅ ꢘꢁꢚ ꢐ ꢋꢚꢌ ꢑ ꢅꢏꢀ ꢀꢐ ꢋ ꢌꢄ ꢑ
SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 4.6 V
CC
Control input voltage range, V (see Notes 1 and 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 7 V
Switch I/O voltage range, V (see Notes 1, 2, and 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 7 V
Control input clamp current, I (V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA
IN
I/O
IK IN
I/O port clamp current, I
(V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA
I/OK I/O
ON-state switch current, I (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 mA
Continuous current through V
I/O
or GND terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
CC
Package thermal impedance, θ (see Note 5): DB package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W
JA
(see Note 5): DBQ package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68°C/W
(see Note 5): DGV package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92°C/W
(see Note 5): DW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58°C/W
(see Note 5): GQN package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78°C/W
(see Note 5): PW package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83°C/W
(see Note 6): RGY package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37°C/W
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
stg
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltages are with respect to ground unless otherwise specified.
2. The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
3. V and V are used to denote specific conditions for V
I/O
.
I
O
4. I and I are used to denote specific conditions for I .
I
O
I/O
5. The package thermal impedance is calculated in accordance with JESD 51-7.
6. The package thermal impedance is calculated in accordance with JESD 51-5.
recommended operating conditions (see Note 7)
MIN
2.3
1.7
2
MAX
3.6
5.5
5.5
0.7
0.8
5.5
85
UNIT
V
V
Supply voltage
V
CC
V
CC
V
CC
V
CC
V
CC
= 2.3 V to 2.7 V
= 2.7 V to 3.6 V
= 2.3 V to 2.7 V
= 2.7 V to 3.6 V
High-level control input voltage
V
V
IH
0
V
V
Low-level control input voltage
IL
0
Data input/output voltage
0
V
I/O
T
A
Operating free-air temperature
−40
°C
NOTE 7: All unused control inputs of the device must be held at V
or GND to ensure proper device operation. Refer to the TI application report,
CC
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢆ ꢈꢃꢃ
ꢉ ꢊꢅꢋ ꢌ ꢍ ꢎꢌ ꢅꢏ ꢀ ꢀ ꢐꢋ ꢌꢄ ꢑ
ꢈ ꢒ ꢓꢊꢔ ꢕꢆ ꢒꢆ ꢊꢔ ꢖ ꢗꢐꢊꢔꢗ ꢖꢌꢘꢙ ꢎ ꢑꢋ ꢙꢑ ꢊꢅꢘꢁꢚꢐ ꢋ ꢚꢌ ꢑ ꢅꢏꢀ ꢀ ꢐꢋ ꢌꢄ ꢑ
SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
†
PARAMETER
TEST CONDITIONS
MIN TYP
MAX
−1.8
1
UNIT
V
V
IK
V
V
= 3.6 V,
= 3.6 V,
I = −18 mA
CC
I
I
I
I
I
Control inputs
V
= 0 to 5.5 V
µA
IN
CC
IN
V
= 0 to 5.5 V,
Switch OFF,
O
‡
V
V
V
= 3.6 V,
= 0,
1
1
µA
µA
mA
µA
OZ
CC
CC
CC
V = 0,
I
V
= V
or GND
IN
V = 0
CC
V
O
= 0 to 5.5 V,
= 0,
off
I
I
I/O
= 3.6 V,
V
IN
= V
or GND
0.7
2
CC
CC
Switch ON or OFF,
§
¶
∆I
CC
Control inputs
V
V
= 3.6 V,
= 3.6 V,
One input at 3 V,
Other inputs at V
CC
or GND
30
0.15
3.5
5
CC
A and B ports open,
Control input switching at 50% duty cycle
Per control
input
mA/
MHz
CC
I
0.14
2.5
CCD
C
C
Control inputs
V
= 3.3 V,
V
= 5.5 V, 3.3 V, or 0
pF
in
CC
CC
IN
Switch OFF,
= V
V
= 3.3 V,
V
V
= 5.5 V, 3.3 V, or 0
= 5.5 V, 3.3 V, or 0
3.5
pF
io(OFF)
I/O
V
or GND,
or GND,
IN
CC
Switch ON,
= V
C
V
V
= 3.3 V,
= 2.3 V,
9
11
pF
io(ON)
CC
I/O
V
IN
V = 0,
CC
I
O
I
O
I
O
I
O
= 30 mA
4
5
4
5
8
9
6
8
I
CC
TYP at V
CC
= 2.5 V
V = 1.7 V,
I
= −15 mA
= 30 mA
= −15 mA
#
Ω
r
on
V = 0,
I
V
CC
= 3 V
V = 2.4 V,
I
V
†
‡
§
¶
#
and I refer to control inputs. V , V , I , and I refer to data pins.
IN
IN
I
O
I
O
All typical values are at V
= 3.3 V (unless otherwise noted), T = 25°C.
CC
For I/O ports, the parameter I
A
includes the input leakage current.
OZ
This is the increase in supply current for each input that is at the specified TTL voltage level, rather than V
or GND.
CC
This parameter specifies the dynamic power-supply current associated with the operating frequency of a single control input (see Figure 2).
Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is determined by
the lower of the voltages of the two (A or B) terminals.
switching characteristics over recommended operating free-air temperature range (unless
otherwise noted) (see Figure 3)
V
= 2.5 V
V
= 3.3 V
CC
0.2 V
CC
0.3 V
FROM
(INPUT)
TO
(OUTPUT)
PARAMETER
UNIT
MIN MAX
MIN MAX
||
OE
f
t
t
t
OE
A or B
OE
A or B
B or A
A or B
A or B
10
0.12
7.1
20
0.2
5.9
5.8
MHz
ns
k
pd
en
dis
2.8
1
2.5
1.5
ns
5.8
ns
OE
||
k
Maximum switching frequency for control input (V > V , V = 5 V, R ≥ 1 MΩ, C = 0)
CC
The propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified load capacitance,
when driven by an ideal voltage source (zero output impedance).
O
I
L
L
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁꢂ ꢃꢄ ꢅ ꢆꢇ ꢆꢈꢃ ꢃ
ꢉꢊ ꢅꢋ ꢌ ꢍ ꢎꢌ ꢅ ꢏ ꢀ ꢀ ꢐꢋ ꢌ ꢄꢑ
ꢈꢒ ꢓꢊꢔ ꢕꢆ ꢒ ꢆ ꢊꢔ ꢖ ꢗꢐꢊꢔ ꢗꢖꢌꢘꢙ ꢎ ꢑꢋ ꢙ ꢑꢊꢅ ꢘꢁꢚ ꢐ ꢋꢚꢌ ꢑ ꢅꢏꢀ ꢀꢐ ꢋ ꢌꢄ ꢑ
SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004
TYPICAL r
vs
on
V
I
16
V
= 3.3 V
= 25°C
= −15 mA
CC
14
12
10
8
T
A
O
I
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
V − V
3.0
3.5
4.0
4.5
5.0
I
Figure 1. Typical r vs V , V
= 3.3 V and I = −15 mA
O
on
I
CC
TYPICAL I
vs
CC
OE SWITCHING FREQUENCY
12
10
8
V
= 3.3 V
CC
= 25°C
T
A
A and B ports Open
6
4
One OE Switching
2
0
0
2
4
6
8
10
12
14
16
18
20
OE Switching Frequency − MHz
Figure 2. Typical I
vs OE Switching Frequency, V
= 3.3 V
CC
CC
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢆ ꢈꢃꢃ
ꢉ ꢊꢅꢋ ꢌ ꢍ ꢎꢌ ꢅꢏ ꢀ ꢀ ꢐꢋ ꢌꢄ ꢑ
ꢈ ꢒ ꢓꢊꢔ ꢕꢆ ꢒꢆ ꢊꢔ ꢖ ꢗꢐꢊꢔꢗ ꢖꢌꢘꢙ ꢎ ꢑꢋ ꢙꢑ ꢊꢅꢘꢁꢚꢐ ꢋ ꢚꢌ ꢑ ꢅꢏꢀ ꢀ ꢐꢋ ꢌꢄ ꢑ
SCDS154B − OCTOBER 2003 − REVISED DECEMBER 2004
PARAMETER MEASUREMENT INFORMATION
V
CC
Input Generator
V
IN
50 Ω
50 Ω
V
G1
TEST CIRCUIT
DUT
2 × V
CC
Open
Input Generator
50 Ω
S1
R
V
V
O
L
I
GND
50 Ω
V
G2
C
R
L
L
(see Note A)
S1
V
I
V
∆
C
R
V
CC
TEST
L
L
2.5 V 0.2 V
3.3 V 0.3 V
Open
Open
500 Ω
500 Ω
V
CC
V
CC
or GND
or GND
30 pF
50 pF
t
pd(s)
2.5 V 0.2 V
3.3 V 0.3 V
2 × V
2 × V
500 Ω
500 Ω
GND
GND
30 pF
50 pF
0.15 V
0.3 V
CC
CC
t
/t
PLZ PZL
2.5 V 0.2 V
3.3 V 0.3 V
GND
GND
500 Ω
500 Ω
V
CC
V
CC
30 pF
50 pF
0.15 V
0.3 V
t
/t
PHZ PZH
Output
Control
(V
V
CC
V
CC
/2
V
CC
/2
)
IN
0 V
t
t
PLZ
PZL
Output
Waveform 1
V
V
CC
Output
Control
V
CC
V
/2
CC
S1 at 2 × V
(see Note B)
V
V
+ V
V
CC
/2
V
CC
/2
CC
OL
∆
(V
IN
)
OL
0 V
t
t
PZH
PHZ
t
t
PLH
PHL
Output
Waveform 2
S1 at GND
V
OH
V
OH
− V
OH
∆
V
/2
Output
CC
V
CC
/2
V
CC
/2
0 V
(see Note B)
V
OL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES (t
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
)
pd(s)
C includes probe and jig capacitance.
L
NOTES: A.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t ≤ 2.5 ns, t ≤ 2.5 ns.
O
r
f
D. The outputs are measured one at a time, with one transition per measurement.
E.
F.
G.
t
t
t
and t
and t
and t
are the same as t
are the same as t
are the same as t
.
.
PLZ
PZL
PLH
PHZ
PZH
PHL
dis
en
. The tpd propagation delay is the calculated RC time constant of the typical ON-state
pd(s)
resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance).
H. All parameters and waveforms are not applicable to all devices.
Figure 3. Test Circuit and Voltage Waveforms
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PACKAGE OPTION ADDENDUM
www.ti.com
25-Jul-2013
PACKAGING INFORMATION
Orderable Device
74CB3Q3244DBQRE4
74CB3Q3244DBQRG4
74CB3Q3244DGVRE4
74CB3Q3244DGVRG4
74CB3Q3244RGYRG4
SN74CB3Q3244DBQR
SN74CB3Q3244DGVR
SN74CB3Q3244PW
Status Package Type Package Pins Package
Eco Plan Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
ACTIVE
SSOP
SSOP
DBQ
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
CU NIPDAU
CU NIPDAU
CU NIPDAU
CU NIPDAU
CU NIPDAU
CU NIPDAU
CU NIPDAU
CU NIPDAU
CU NIPDAU
CU NIPDAU
CU NIPDAU
CU NIPDAU
CU NIPDAU
SNAGCU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-2-260C-1 YEAR
Level-1-260C-UNLIM
CB3Q3244
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
DBQ
DGV
DGV
RGY
DBQ
DGV
PW
2500
2000
2000
3000
2500
2000
70
Green (RoHS
& no Sb/Br)
CB3Q3244
BU244
BU244
BU244
CB3Q3244
BU244
BU244
BU244
BU244
BU244
BU244
BU244
BU244
BU244
TVSOP
TVSOP
VQFN
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
SSOP
Green (RoHS
& no Sb/Br)
TVSOP
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
VQFN
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
SN74CB3Q3244PWE4
SN74CB3Q3244PWG4
SN74CB3Q3244PWR
SN74CB3Q3244PWRE4
SN74CB3Q3244PWRG4
SN74CB3Q3244RGYR
SN74CB3Q3244ZQNR
PW
70
Green (RoHS
& no Sb/Br)
PW
70
Green (RoHS
& no Sb/Br)
PW
2000
2000
2000
3000
1000
Green (RoHS
& no Sb/Br)
PW
Green (RoHS
& no Sb/Br)
PW
Green (RoHS
& no Sb/Br)
RGY
ZQN
Green (RoHS
& no Sb/Br)
BGA
Green (RoHS
& no Sb/Br)
MICROSTAR
JUNIOR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
25-Jul-2013
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Jul-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
SN74CB3Q3244DBQR
SSOP
DBQ
DGV
PW
20
20
20
20
20
2500
2000
2000
3000
1000
330.0
330.0
330.0
330.0
330.0
16.4
12.4
16.4
12.4
12.4
6.5
6.9
9.0
5.6
7.1
4.8
4.3
2.1
1.6
1.6
1.6
1.6
8.0
8.0
8.0
8.0
8.0
16.0
12.0
16.0
12.0
12.0
Q1
Q1
Q1
Q1
Q1
SN74CB3Q3244DGVR TVSOP
SN74CB3Q3244PWR
SN74CB3Q3244RGYR
TSSOP
VQFN
6.95
3.8
RGY
ZQN
SN74CB3Q3244ZQNR BGA MI
3.3
CROSTA
R JUNI
OR
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Jul-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
SN74CB3Q3244DBQR
SN74CB3Q3244DGVR
SN74CB3Q3244PWR
SN74CB3Q3244RGYR
SSOP
TVSOP
TSSOP
VQFN
DBQ
DGV
PW
20
20
20
20
20
2500
2000
2000
3000
1000
367.0
367.0
367.0
367.0
338.1
367.0
367.0
367.0
367.0
338.1
38.0
35.0
38.0
35.0
20.6
RGY
ZQN
SN74CB3Q3244ZQNR BGA MICROSTAR
JUNIOR
Pack Materials-Page 2
MECHANICAL DATA
MPDS006C – FEBRUARY 1996 – REVISED AUGUST 2000
DGV (R-PDSO-G**)
PLASTIC SMALL-OUTLINE
24 PINS SHOWN
0,23
0,13
M
0,07
0,40
24
13
0,16 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
0°–ā8°
0,75
1
12
0,50
A
Seating Plane
0,08
0,15
0,05
1,20 MAX
PINS **
14
16
20
24
38
48
56
DIM
A MAX
A MIN
3,70
3,50
3,70
3,50
5,10
4,90
5,10
4,90
7,90
7,70
9,80
9,60
11,40
11,20
4073251/E 08/00
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion, not to exceed 0,15 per side.
D. Falls within JEDEC: 24/48 Pins – MO-153
14/16/20/56 Pins – MO-194
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
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