AMC1304L05QDWRQ1 [TI]
具有 LDO 和 LVDS 接口的汽车类 ±50mV 输入、电流检测增强型隔离式调制器 | DW | 16 | -40 to 125;
| 型号： | AMC1304L05QDWRQ1 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有 LDO 和 LVDS 接口的汽车类 ±50mV 输入、电流检测增强型隔离式调制器 | DW | 16 | -40 to 125 |
| 文件： | 总41页 (文件大小：1922K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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AMC1304L05-Q1, AMC1304L25-Q1, AMC1304M05-Q1, AMC1304M25-Q1
ZHCSFZ4 –FEBRUARY 2017
AMC1304x-Q1 具有 LDO 的高精度、
增强隔离式 Δ-Σ 调制器
1 特性
3 说明
1
•
•
汽车电子 应用认证
具有符合 AEC-Q100 的下列结果：
AMC1304-Q1 是一款高精度 Δ-Σ (ΔΣ) 调制器，通过磁
场抗扰度较高的电容式双隔离栅隔离输出与输入电路。
根据 DIN V VDE V 0884-10、UL1577 和 CSA 标准，
该隔离栅经认证可提供高达 7000 VPEAK 的增强型隔
离。当与隔离电源配合使用时，该器件可防止共模高电
压线路上的噪声电流进入本地系统接地，从而干扰或损
害低电压电路。
–
–
温度等级 1：-40°C 至 +125°C
人体放电模式 (HBM) 静电放电 (ESD) 分类等级
2
–
组件充电模式 (CDM) ESD 分类等级 C6
•
•
与以下器件引脚兼容的系列：
–
–
输入电压范围为 ±50mV 或 ±250mV
CMOS 或 LVDS 数字接口选项
AMC1304-Q1 的输入针对直接连接分流电阻或其他低
电压等级信号源进行了优化。凭借独特的 ±50mV 低输
入电压范围，器件可通过分流显著降低功耗，同时具有
出色的交流和直流性能。通过使用适当的数字滤波器
（即集成于 TMS320F2807x 或 TMS320F2837x 系
列）来抽取位流，该器件可在 78kSPS 数据速率下实
现 81dB (13.2 ENOB) 动态范围的 16 位分辨率。
出色的直流性能：
–
–
–
–
偏移误差：±50µV 或 ±100µV（最大值）
偏移漂移：1.3µV/°C（最大值）
增益误差：±0.2% 或 ±0.3%（最大值）
增益漂移：±40ppm/°C（最大值）
•
安全相关认证：
在高侧，调制器由集成的低压降 (LDO) 稳压器供电，
该稳压器支持介于 4V 和 18V 之间的未经稳压的输入
电压 (LDOIN)。隔离数字接口由 3.3V 或 5V 电源
(DVDD) 供电。
–
–
–
7000 VPK 增强型隔离，符合 DIN V VDE V
0884-10 (VDE V 0884-10): 2006-12 标准
符合 UL 1577 标准且长达 1 分钟的 5000 VRMS
隔离
CAN/CSA No. 5A 组件验收服务通知
AMC1304-Q1 采用宽体小外形尺寸集成电路 (SOIC)-
16 (DW) 封装。
•
•
瞬态抗扰度：15kV/µs（最小值）
高电磁场抗扰度
（请参见应用手册 SLLA181A）
器件信息(1)
器件型号
封装
封装尺寸（标称值）
•
•
5MHz 至 20MHz 外部时钟输入
18V 片载低压降 (LDO) 稳压器
AMC1304x-Q1
SOIC (16)
10.30mm x 7.50mm
(1) 如需了解所有可用封装，请参见数据表末尾的可订购产品附
录。
2 应用
•
基于分流的电流感测或基于电阻分压器的电压感测
输入：
–
–
–
–
牵引逆变器
板载充电器 (OBC)
直流-直流转换器
电池管理系统 (BMS)
简化电路原理图
Floating
Power Supply
AMC1304-Q1
LDOIN
HV+
4 V to 18 V
DVDD
3.3 V or 5.0 V
VCAP
DGND
AGND
AINN
AINP
TMS320F2837x
RSHUNT
To Load
DOUT
CLKIN
SD-Dx
SD-Cx
PWMx
Copyright © 2016, Texas Instruments Incorporated
HV-
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SBAS799
AMC1304L05-Q1, AMC1304L25-Q1, AMC1304M05-Q1, AMC1304M25-Q1
ZHCSFZ4 –FEBRUARY 2017
www.ti.com.cn
目录
8.1 Overview ................................................................. 21
8.2 Functional Block Diagram ....................................... 21
8.3 Feature Description................................................. 21
8.4 Device Functional Modes........................................ 24
Application and Implementation ........................ 25
9.1 Application Information............................................ 25
9.2 Typical Applications ................................................ 26
1
2
3
4
5
6
7
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Device Comparison Table..................................... 3
Pin Configurations and Functions....................... 4
Specifications......................................................... 5
7.1 Absolute Maximum Ratings ...................................... 5
7.2 ESD Ratings.............................................................. 5
7.3 Recommended Operating Conditions....................... 5
7.4 Thermal Information.................................................. 5
7.5 Power Ratings........................................................... 5
7.6 Insulation Specifications............................................ 6
7.7 Safety-Related Certifications..................................... 7
7.8 Safety Limiting Values .............................................. 7
7.9 Electrical Characteristics: AMC1304x05-Q1............. 8
7.10 Electrical Characteristics: AMC1304x25-Q1......... 10
7.11 Switching Characteristics...................................... 12
7.12 Insulation Characteristics Curves ......................... 13
7.13 Typical Characteristics.......................................... 14
Detailed Description ............................................ 21
9
10 Power-Supply Recommendations ..................... 30
11 Layout................................................................... 31
11.1 Layout Guidelines ................................................. 31
11.2 Layout Examples................................................... 31
12 器件和文档支持 ..................................................... 33
12.1 文档支持................................................................ 33
12.2 相关链接................................................................ 33
12.3 接收文档更新通知 ................................................. 33
12.4 社区资源................................................................ 33
12.5 商标....................................................................... 33
12.6 静电放电警告......................................................... 33
12.7 Glossary................................................................ 33
13 机械、封装和可订购信息....................................... 34
8
4 修订历史记录
日期
修订版本
注释
2017 年2 月
*
首次发布。
2
Copyright © 2017, Texas Instruments Incorporated
AMC1304L05-Q1, AMC1304L25-Q1, AMC1304M05-Q1, AMC1304M25-Q1
www.ti.com.cn
ZHCSFZ4 –FEBRUARY 2017
5 Device Comparison Table
INPUT VOLTAGE
RANGE
DIFFERENTIAL INPUT
RESISTANCE
DIGITAL OUTPUT
INTERFACE
DEVICE
AMC1304L05-Q1
AMC1304L25-Q1
AMC1304M05-Q1
AMC1304M25-Q1
±50 mV
±250 mV
±50 mV
5 kΩ
25 kΩ
5 kΩ
LVDS
LVDS
CMOS
CMOS
±250 mV
25 kΩ
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6 Pin Configurations and Functions
DW Package: LVDS Interface Versions (AMC1304Lx-Q1)
DW Package: CMOS Interface Versions (AMC1304Mx-Q1)
16-Pin SOIC
Top View
16-Pin SOIC
Top View
NC
AINP
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
DGND
NC
NC
AINP
1
2
3
4
5
6
7
8
16 DGND
NC
15
14
13
12
11
10
9
AINN
AGND
NC
DVDD
CLKIN
CLKIN_N
DOUT
DOUT_N
DGND
AINN
AGND
NC
DVDD
CLKIN
NC
LDOIN
VCAP
AGND
LDOIN
VCAP
AGND
DOUT
NC
DGND
Pin Functions
PIN
NO.
AMC1304Mx-Q1
I/O
NAME
AMC1304Lx-Q1
(LVDS)
(CMOS)
DESCRIPTION
4
8
4
8
—
—
I
This pin is internally connected to pin 8 and can be left unconnected or tied to high-side ground
High-side ground reference
AGND
AINN
3
3
Inverting analog input
AINP
2
2
I
Noninverting analog input
CLKIN
CLKIN_N
DGND
DOUT
DOUT_N
13
12
9, 16
11
10
13
—
9, 16
11
—
I
Modulator clock input, 5 MHz to 20.1 MHz
Inverted modulator clock input
I
—
O
O
Controller-side ground reference
Modulator data output
Inverted modulator data output
Controller-side power supply, 3.0 V to 5.5 V.
See the Power-Supply Recommendations section for decoupling recommendations.
DVDD
LDOIN
14
14
—
6
1
6
1
—
—
—
—
—
Low dropout regulator input, 4 V to 18 V
This pin can be connected to VCAP or left unconnected
This pin can be left unconnected or tied to AGND only
These pins have no internal connection
5
5
NC
—
15
10, 12
15
This pin can be left unconnected or tied to DVDD only
LDO output. See the Power-Supply Recommendations section for decoupling
recommendations.
VCAP
7
7
—
4
Copyright © 2017, Texas Instruments Incorporated
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ZHCSFZ4 –FEBRUARY 2017
7 Specifications
7.1 Absolute Maximum Ratings
over the operating ambient temperature range (unless otherwise noted)(1)
MIN
–0.3
MAX
UNIT
V
Supply voltage
DVDD to DGND
LDOIN to AGND
6.5
LDO input voltage
–0.3
26
3.7
V
Analog input voltage at AINP, AINN
AGND – 6
DGND – 0.3
–10
V
Digital input voltage at CLKIN, CLKIN_N
Input current to any pin except supply pins
Junction temperature, TJ
DVDD + 0.3
10
V
mA
°C
°C
150
Storage temperature, Tstg
–65
150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and do not imply functional operation of the device at these or any other conditions beyond those indicated. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
±2500
±1000
UNIT
Human body model (HBM), per AEC Q100-002(1)
Charged device model (CDM), per AEC Q100-011
V(ESD)
Electrostatic discharge
V
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
4.0
NOM
15.0
3.3
MAX
UNIT
LDOIN
DVDD
TA
LDO input supply voltage (LDOIN pin)
18.0
5.5
V
V
Digital (controller-side) supply voltage (DVDD pin)
Operating ambient temperature range
3.0
–40
125
°C
7.4 Thermal Information
AMC1304x-Q1
DW (SOIC)
16 PINS
80.2
(1)
THERMAL METRIC
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
40.5
45.1
ψJT
11.9
ψJB
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
44.5
RθJC(bot)
n/a
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Power Ratings
PARAMETER
TEST CONDITIONS
LDOIN = 18 V, DVDD = 5.5 V
LDOIN = 18 V
VALUE
161
UNIT
mW
mW
mW
PD
Maximum power dissipation (both sides)
Maximum power dissipation (high-side supply)
Maximum power dissipation (low-side supply)
PD1
PD2
117
DVDD = 5.5 V, LVDS, RLOAD = 100 Ω
44
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UNIT
7.6 Insulation Specifications
PARAMETER
TEST CONDITIONS
VALUE
GENERAL
CLR
Minimum air gap (clearance)(1)
Shortest pin-to-pin distance through air
≥ 8
≥ 8
mm
mm
Shortest pin-to-pin distance across the package
surface
CPG
Minimum external tracking (creepage)(1)
Minimum internal gap (internal clearance) of the
double insulation (2 × 0.0135 mm)
DTI
CTI
Distance through insulation
0.027
mm
V
Comparative tracking index
Material group
DIN EN 60112 (VDE 0303-11); IEC 60112
According to IEC 60664-1
≥ 600
I
Rated mains voltage ≤ 300 VRMS
Rated mains voltage ≤ 600 VRMS
Rated mains voltage ≤ 1000 VRMS
I-IV
I-III
I-II
Overvoltage category per IEC 60664-1
DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12(2)
Maximum repetitive peak isolation
voltage
VIORM
At ac voltage (bipolar or unipolar)
1414
VPK
At ac voltage (sine wave)
At dc voltage
1000
1500
7000
VRMS
VDC
Maximum-rated isolation working
voltage
VIOWM
VTEST = VIOTM, t = 60 s (qualification test)
VIOTM
Maximum transient isolation voltage
Maximum surge isolation voltage(3)
VPK
VTEST = 1.2 x VIOTM, t = 1 s (100% production
test)
8400
Test method per IEC 60065, 1.2/50-μs
waveform, VTEST = 1.6 x VIOSM = 10000 VPK
(qualification)
VIOSM
6250
VPK
pC
pC
pC
Method a, after input/output safety test subgroup
2 / 3, Vini = VIOTM, tini = 60 s, Vpd(m) = 1.2 x VIORM
= 1697 VPK, tm = 10 s
≤ 5
≤ 5
≤ 5
Method a, after environmental tests subgroup 1,
qpd
Apparent charge(4)
Vini = VIOTM, tini = 60 s, Vpd(m) = 1.6 x VIORM
2263 VPK, tm = 10 s
=
Method b1, at routine test (100% production) and
preconditioning (type test), Vini = VIOTM, tini = 1 s,
Vpd(m) = 1.875 x VIORM = 2652 VPK, tm = 1 s
CIO
RIO
Barrier capacitance, input to output(5)
Insulation resistance, input to output(5)
Pollution degree
VIO = 0.5 VPP at 1 MHz
1.2
> 109
2
pF
VIO = 500 V at TS = 150°C
Ω
Climatic category
40/125/21
UL1577
VTEST = VISO = 5000 VRMS or 7000 VDC, t = 60 s
(qualification test), VTEST = 1.2 x VISO = 6000
VRMS, t = 1 s (100% production test)
VISO
Withstand isolation voltage
5000
VRMS
(1) Apply creepage and clearance requirements according to the specific equipment isolation standards of an application. Care must be
taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed
circuit board (PCB) do not reduce this distance. Creepage and clearance on a PCB become equal in certain cases. Techniques such as
inserting grooves or ribs on the PCB are used to help increase these specifications.
(2) This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by
means of suitable protective circuits.
(3) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(4) Apparent charge is electrical discharge caused by a partial discharge (pd).
(5) All pins on each side of the barrier are tied together, creating a two-pin device.
6
Copyright © 2017, Texas Instruments Incorporated
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ZHCSFZ4 –FEBRUARY 2017
7.7 Safety-Related Certifications
VDE
UL
Certified according to DIN V VDE V 0884-10 (VDE V 0884-10):
2006-12, DIN EN 60950-1 (VDE 0805 Teil 1): 2014-08, and DIN EN
60095 (VDE 0860): 2005-11
Recognized under UL1577 component recognition and CSA
component acceptance NO 5 programs
Reinforced insulation
Single protection
File number: 40040142
File number: E181974
7.8 Safety Limiting Values
Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output (I/O) circuitry. A
failure of the I/O circuitry may allow low resistance to ground or the supply and, without current limiting, dissipate sufficient
power to overheat the die and damage the isolation barrier, potentially leading to secondary system failures.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
θJA = 80.2°C/W, LDOIN = 18 V, TJ = 150°C,
TA = 25°C, see Figure 3
IS
Safety input, output, or supply current
86.5
mA
PS Safety input, output, or total power
TS Maximum safety temperature
θJA = 80.2°C/W, TJ = 150°C, TA = 25°C, see Figure 4
1558(1)
150
mW
°C
(1) Input, output, or the sum of input and output power must not exceed this value.
The maximum safety temperature is the maximum junction temperature specified for the device. The power
dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines
the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Information table is that
of a device installed on a high-K test board for leaded surface-mount packages. The power is the recommended
maximum input voltage times the current. The junction temperature is then the ambient temperature plus the
power times the junction-to-air thermal resistance.
Copyright © 2017, Texas Instruments Incorporated
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7.9 Electrical Characteristics: AMC1304x05-Q1
All minimum and maximum specifications are at TA = –40°C to 125°C, LDOIN = 4.0 V to 18.0 V, DVDD = 3.0 V to 5.5 V,
AINP = –50 mV to 50 mV, AINN = 0 V, and sinc3 filter with OSR = 256, unless otherwise noted. Typical values are at TA =
25°C, CLKIN = 20 MHz, LDOIN = 15.0 V, and DVDD = 3.3 V.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ANALOG INPUTS
Maximum differential voltage input range
(AINP-AINN)
VClipping
FSR
±62.5
mV
mV
Specified linear full-scale range
(AINP-AINN)
–50
50
VCM
CID
IIB
Operating common-mode input range
Differential input capacitance
Input bias current
–0.032
1.2
V
pF
2
–72
5
Inputs shorted to AGND
–97
15
–57
μA
RID
IIO
Differential input resistance
Input offset current
kΩ
±5
nA
CMTI
Common-mode transient immunity
kV/μs
fIN = 0 Hz,
CM min ≤ VIN ≤ VCM max
–98
V
CMRR
BW
Common-mode rejection ratio
Input bandwidth
dB
fIN from 0.1 Hz to 50 kHz,
CM min ≤ VIN ≤ VCM max
–85
800
V
kHz
DC ACCURACY
DNL
INL
Differential nonlinearity
Resolution: 16 bits
Resolution: 16 bits
Initial, at 25°C
–0.99
–5
0.99
5
LSB
LSB
µV
(1)
Integral nonlinearity
Offset error
±1.5
±2.5
EO
–50
50
(2)
TCEO
EG
Offset error thermal drift
Gain error
–1.3
–0.3%
–40
1.3
0.3%
40
μV/°C
Initial, at 25°C
–0.02%
±20
(3)
TCEG
Gain error thermal drift
ppm/°C
dB
LDOIN from 4 V to 18 V, at dc
–110
PSRR
Power-supply rejection ratio
LDOIN from 4 V to 18 V, from 0.1 Hz to
50 kHz
–110
AC ACCURACY
SNR
Signal-to-noise ratio
fIN = 1 kHz
fIN = 1 kHz
fIN = 1 kHz
fIN = 1 kHz
76
76
81.5
81
dB
dB
dB
dB
SINAD
THD
Signal-to-noise + distortion
Total harmonic distortion
Spurious-free dynamic range
–90
90
–81
SFDR
81
DIGITAL INPUTS/OUTPUTS
External Clock
fCLKIN
Input clock frequency
Duty cycle
5
20
20.1
60%
MHz
DutyCLKIN
5 MHz ≤ fCLKIN ≤ 20.1 MHz
40%
50%
(1) Integral nonlinearity is defined as the maximum deviation from a straight line passing through the end-points of the ideal ADC transfer
function expressed as a number of LSBs or as a percent of the specified linear full-scale range (FSR).
(2) Offset error drift is calculated using the box method, as described by the following equation:
valueMAX - valueMIN
TCEO
=
TempRange
(3) Gain error drift is calculated using the box method, as described by the following equation:
≈ value MAX - value MIN
’
6
∆
∆
÷
÷
TCEG ( ppm) =
ì10
value ìTempRange
«
◊
8
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ZHCSFZ4 –FEBRUARY 2017
Electrical Characteristics: AMC1304x05-Q1 (continued)
All minimum and maximum specifications are at TA = –40°C to 125°C, LDOIN = 4.0 V to 18.0 V, DVDD = 3.0 V to 5.5 V,
AINP = –50 mV to 50 mV, AINN = 0 V, and sinc3 filter with OSR = 256, unless otherwise noted. Typical values are at TA =
25°C, CLKIN = 20 MHz, LDOIN = 15.0 V, and DVDD = 3.3 V.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CMOS Logic Family (AMC1304M05-Q1, CMOS with Schmitt Trigger)
IIN
Input current
DGND ≤ VIN ≤ DVDD
–1
1
μA
pF
V
CIN
VIH
Input capacitance
5
High-level input voltage
Low-level input voltage
Output load capacitance
0.7 × DVDD
–0.3
DVDD + 0.3
0.3 × DVDD
VIL
V
CLOAD
fCLKIN = 20 MHz
IOH = –20 µA
IOH = –4 mA
IOL = 20 µA
30
pF
DVDD – 0.1
DVDD – 0.4
VOH
High-level output voltage
V
V
0.1
0.4
VOL
Low-level output voltage
IOL = 4 mA
LVDS Logic Family (AMC1304L05-Q1)(4)
VT
Differential output voltage
Common-mode output voltage
Differential input voltage
Common-mode input voltage
Receiver input current
RLOAD = 100 Ω
250
1.125
100
350
1.23
350
1.25
0
450
1.375
600
mV
V
VOC
VID
VIC
II
mV
V
VID = 100 mV
0.05
–24
3.25
20
DGND ≤ VIN ≤ 3.3 V
µA
POWER SUPPLY
LDOIN
VCAP
ILDOIN
LDOIN pin input voltage
4.0
3.0
15.0
3.45
5.3
18.0
V
V
VCAP pin voltage
LDOIN pin input current
Controller-side supply voltage
6.5
5.5
8
mA
V
DVDD
3.3
LVDS, RLOAD = 100 Ω
6.1
CMOS, 3.0 V ≤ DVDD ≤ 3.6 V,
CLOAD = 5 pF
2.7
3.2
4.0
5.5
IDVDD
Controller-side supply current
mA
CMOS, 4.5 V ≤ DVDD ≤ 5.5 V,
CLOAD = 5 pF
(4) For further information on electrical characteristics of LVDS interface circuits, see the TIA-644-A standard and design note Interface
Circuits for TIA/EIA-644 (LVDS).
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7.10 Electrical Characteristics: AMC1304x25-Q1
All minimum and maximum specifications are at TA = –40°C to 125°C, LDOIN = 4.0 V to 18.0 V, DVDD = 3.0 V to 5.5 V,
AINP = –250 mV to 250 mV, AINN = 0 V, and sinc3 filter with OSR = 256, unless otherwise noted. Typical values are at TA
= 25°C, CLKIN = 20 MHz, LDOIN = 15.0 V, and DVDD = 3.3 V.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ANALOG INPUTS
Maximum differential voltage input range
(AINP-AINN)
VClipping
FSR
±312.5
mV
mV
Specified linear full-scale range
(AINP-AINN)
–250
250
1.2
VCM
CID
IIB
Operating common-mode input range
Differential input capacitance
Input bias current
–0.16
V
pF
1
–60
25
Inputs shorted to AGND
–82
15
–48
μA
RID
IIO
Differential input resistance
Input offset current
kΩ
±5
nA
CMTI
Common-mode transient immunity
kV/μs
fIN = 0 Hz,
CM min ≤ VIN ≤ VCM max
–98
V
CMRR
BW
Common-mode rejection ratio
Input bandwidth
dB
fIN from 0.1 Hz to 50 kHz,
CM min ≤ VIN ≤ VCM max
–98
V
1000
kHz
DC ACCURACY
DNL
INL
Differential nonlinearity
Integral nonlinearity(1)
Resolution: 16 bits
Resolution: 16 bits
Initial, at 25°C
–0.99
–4
0.99
4
LSB
LSB
µV
±1.5
±25
EO
Offset error
–100
–1.3
–0.2%
–40
100
1.3
TCEO
EG
Offset error thermal drift(2)
Gain error
Gain error thermal drift(3)
μV/°C
Initial, at 25°C
–0.05%
±20
0.2%
40
TCEG
ppm/°C
dB
LDOIN from 4 V to 18 V, at dc
–110
PSRR
Power-supply rejection ratio
LDOIN from 4 V to 18 V,
from 0.1 Hz to 50 kHz
–110
AC ACCURACY
SNR
Signal-to-noise ratio
fIN = 1 kHz
fIN = 1 kHz
fIN = 1 kHz
fIN = 1 kHz
82
80
85
84
dB
dB
dB
dB
SINAD
THD
Signal-to-noise + distortion
Total harmonic distortion
Spurious-free dynamic range
–90
90
–81
SFDR
81
DIGITAL INPUTS/OUTPUTS
External Clock
fCLKIN
Input clock frequency
Duty cycle
5
20
20.1
60%
MHz
DutyCLKIN
5 MHz ≤ fCLKIN ≤ 20.1 MHz
40%
50%
(1) Integral nonlinearity is defined as the maximum deviation from a straight line passing through the end-points of the ideal ADC transfer
function expressed as number of LSBs or as a percent of the specified linear full-scale range FSR.
(2) Offset error drift is calculated using the box method as described by the following equation:
valueMAX - valueMIN
TCEO
=
TempRange
.
(3) Gain error drift is calculated using the box method as described by the following equation:
≈ value MAX - value MIN
’
6
∆
∆
÷
÷
TCEG ( ppm) =
ì10
value ìTempRange
«
◊
.
10
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Electrical Characteristics: AMC1304x25-Q1 (continued)
All minimum and maximum specifications are at TA = –40°C to 125°C, LDOIN = 4.0 V to 18.0 V, DVDD = 3.0 V to 5.5 V,
AINP = –250 mV to 250 mV, AINN = 0 V, and sinc3 filter with OSR = 256, unless otherwise noted. Typical values are at TA
= 25°C, CLKIN = 20 MHz, LDOIN = 15.0 V, and DVDD = 3.3 V.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CMOS Logic Family (AMC1304M25-Q1, CMOS with Schmitt Trigger)
IIN
Input current
DGND ≤ VIN ≤ DVDD
–1
1
μA
pF
V
CIN
VIH
Input capacitance
5
High-level input voltage
Low-level input voltage
Output load capacitance
0.7 × DVDD
–0.3
DVDD + 0.3
0.3 × DVDD
VIL
V
CLOAD
fCLKIN = 20 MHz
IOH = –20 µA
IOH = –4 mA
IOL = 20 µA
30
pF
V
DVDD – 0.1
DVDD – 0.4
VOH
High-level output voltage
V
0.1
0.4
V
VOL
Low-level output voltage
IOL = 4 mA
V
LVDS Logic Family (AMC1304L25-Q1)(4)
VT
Differential output voltage
Common-mode output voltage
Differential input voltage
Common-mode input voltage
Receiver input current
RLOAD = 100 Ω
250
1.125
100
350
1.23
350
1.25
0
450
1.375
600
mV
V
VOC
VID
VIC
II
mV
V
VID = 100 mV
0.05
–24
3.25
20
DGND ≤ VIN ≤ 3.3 V
µA
POWER SUPPLY
LDOIN
VCAP
ILDOIN
LDOIN pin input voltage
4.0
3.0
15.0
3.45
5.3
18.0
V
V
VCAP pin voltage
LDOIN pin input current
Controller-side supply voltage
6.5
5.5
8.0
mA
V
DVDD
3.3
LVDS, RLOAD = 100 Ω
6.1
CMOS, 3.0 V ≤ DVDD ≤ 3.6 V,
CLOAD = 5 pF
2.7
3.2
4.0
5.5
IDVDD
Controller-side supply current
mA
CMOS, 4.5 V ≤ DVDD ≤ 5.5 V,
CLOAD = 5 pF
(4) For further information on electrical characteristics of LVDS interface circuits, see the TIA-644-A standard and design note Interface
Circuits for TIA/EIA-644 (LVDS).
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7.11 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
49.75
19.9
TYP
50
MAX
UNIT
ns
tCLK
CLKIN, CLKIN_N clock period
CLKIN, CLKIN_N clock high time
CLKIN, CLKIN_N clock low time
200
120
120
tHIGH
tLOW
25
ns
19.9
25
ns
Falling edge of CLKIN, CLKIN_N to
DOUT, DOUT_N valid delay
tD
0
15
32
ns
DVDD at 3.0 V (min) to DOUT,
DOUT_N valid with LDO_IN > 4 V
CLKIN
cycles
tISTART
tASTART
Interface startup time
Analog startup time
32
LDOIN step to 4 V with DVDD ≥ 3.0 V,
and 0.1 µF at VCAP pin
1
ms
tCLK
tHIGH
/[YLb
/[YLb_b
tLOW
tD
5hÜÇ
5hÜÇ_b
Figure 1. Digital Interface Timing
5ë55
/[YLb
5hÜÇ
...
5ata not valid
ëalid data
tISTART = 32 CLKIN cycles
Figure 2. Digital Interface Startup Timing
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7.12 Insulation Characteristics Curves
100
90
80
70
60
50
40
30
20
10
0
1600
1400
1200
1000
800
600
400
200
0
0
50
100
150
200
0
50
100
150
200
TA (°C)
TA (°C)
D043
D044
LDOIN = 18 V (worst case)
Figure 3. Thermal Derating Curve for Safety Limiting
Current per VDE
Figure 4. Thermal Derating Curve for Safety Limiting Power
per VDE
TA up to 150°C, stress voltage frequency = 60 Hz
Figure 5. Reinforced Isolation Capacitor Lifetime Projection
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7.13 Typical Characteristics
At LDOIN = 15.0 V, DVDD = 3.3 V, AINP = –50 mV to 50 mV (AMC1304x05-Q1) or –250 mV to 250 mV (AMC1304x25-Q1),
AINN = 0 V, fCLKIN = 20 MHz, and sinc3 filter with OSR = 256, unless otherwise noted.
AMC1304x05-Q1
AMC1304x25-Q1
AMC1304x05-Q1
AMC1304x25-Q1
Figure 6. Input Current vs Input Common-Mode Voltage
Figure 7. Common-Mode Rejection Ratio vs
Input Signal Frequency
4
3.5
3
4
3
2
1
0
2.5
2
1.5
1
-1
-2
-3
-4
0.5
0
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
-50 -40 -30 -20 -10
0
10
20
30
40
50
VIN (mV)
D004
D003
Figure 9. Integral Nonlinearity vs Temperature
Figure 8. Integral Nonlinearity vs Input Signal Amplitude
100
50
40
80
60
30
40
20
20
10
0
0
-20
-40
-60
-80
-100
-10
-20
-30
-40
-50
4
6
8
10
12
14
16
18
4
6
8
10
12
14
16
18
VLDOIN (V)
VLDOIN (V)
D005
D006
AMC1304x25-Q1
AMC1304x05-Q1
Figure 10. Offset Error vs LDO Input Supply Voltage
Figure 11. Offset Error vs LDO Input Supply Voltage
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Typical Characteristics (continued)
At LDOIN = 15.0 V, DVDD = 3.3 V, AINP = –50 mV to 50 mV (AMC1304x05-Q1) or –250 mV to 250 mV (AMC1304x25-Q1),
AINN = 0 V, fCLKIN = 20 MHz, and sinc3 filter with OSR = 256, unless otherwise noted.
100
50
80
40
60
30
40
20
20
10
0
0
-20
-40
-60
-80
-100
-10
-20
-30
-40
-50
-40 -25 -10
5
20 35 50 65 80 95 110 125
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (èC)
Temperature (èC)
D007
D008
AMC1304x25-Q1
AMC1304x05-Q1
Figure 12. Offset Error vs Temperature
Figure 13. Offset Error vs Temperature
0.3
0.2
0.1
0
AMC1304x05-Q1
AMC1304x25-Q1
-0.1
-0.2
-0.3
4
6
8
10
12
14
16
18
VLDOIN (V)
D010
Figure 14. Offset Error vs Clock Frequency
Figure 15. Gain Error vs LDO Input Supply Voltage
0.3
0.2
0.1
0
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
-0.1
-0.2
-0.3
-40 -25 -10
5
20 35 50 65 80 95 110 125
5
10
15
20
Temperature (èC)
fCLKIN (MHz)
D011
D012
Figure 16. Gain Error vs Temperature
Figure 17. Gain Error vs Clock Frequency
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Typical Characteristics (continued)
At LDOIN = 15.0 V, DVDD = 3.3 V, AINP = –50 mV to 50 mV (AMC1304x05-Q1) or –250 mV to 250 mV (AMC1304x25-Q1),
AINN = 0 V, fCLKIN = 20 MHz, and sinc3 filter with OSR = 256, unless otherwise noted.
0
SNR (AMC1304x05-Q1)
SINAD (AMC1304x05-Q1)
SNR (AMC1304x25-Q1)
SINAD (AMC1304x25-Q1)
-20
-40
-60
-80
-100
-120
0.001
0.01
0.1
1
10
100
Ripple Frequency (kHz)
D013
Figure 18. Power-Supply Rejection Ratio vs
Ripple Frequency
Figure 19. Signal-to-Noise Ratio and Signal-to-Noise +
Distortion vs LDO Input Supply Voltage
SNR (AMC1304x05-Q1)
SINAD (AMC1304x05-Q1)
SNR (AMC1304x25-Q1)
SINAD (AMC1304x25-Q1)
SNR (AMC1304x05-Q1)
SINAD (AMC1304x05-Q1)
SNR (AMC1304x25-Q1)
SINAD (AMC1304x25-Q1)
Figure 21. Signal-to-Noise Ratio and Signal-to-Noise +
Distortion vs Clock Frequency
Figure 20. Signal-to-Noise Ratio and Signal-to-Noise +
Distortion vs Temperature
100
SNR
SINAD
SNR (AMC1304x05-Q1)
SINAD (AMC1304x05-Q1)
SNR (AMC1304x25-Q1)
SINAD (AMC1304x25-Q1)
95
90
85
80
75
70
65
60
55
50
0
50 100 150 200 250 300 350 400 450 500
VIN (mVpp)
D018
AMC1304x25-Q1
Figure 23. SNR and SINAD vs Input Signal Amplitude
Figure 22. Signal-to-Noise Ratio and Signal-to-Noise +
Distortion vs Input Signal Frequency
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Typical Characteristics (continued)
At LDOIN = 15.0 V, DVDD = 3.3 V, AINP = –50 mV to 50 mV (AMC1304x05-Q1) or –250 mV to 250 mV (AMC1304x25-Q1),
AINN = 0 V, fCLKIN = 20 MHz, and sinc3 filter with OSR = 256, unless otherwise noted.
100
95
90
85
80
75
70
65
60
55
50
-60
SNR
SINAD
-65
-70
-75
-80
-85
-90
-95
-100
-105
-110
0
10
20
30
40
50
60
70
80
90 100
4
6
8
10
12
14
16
18
VIN (mVpp)
VLDOIN (V)
D019
D020
AMC1304x05-Q1
Figure 24. Signal-to-Noise Ratio and Signal-to-Noise +
Distortion vs Input Signal Amplitude
Figure 25. Total Harmonic Distortion vs
LDO Input Supply Voltage
-60
-60
-65
-65
-70
-70
-75
-75
-80
-80
-85
-85
-90
-90
-95
-95
-100
-105
-110
-100
-105
-110
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
5
10
15
20
fCLKIN (MHz)
D021
D022
Figure 26. Total Harmonic Distortion vs Temperature
Figure 27. Total Harmonic Distortion vs Clock Frequency
-60
-60
-65
-70
-65
-70
-75
-75
-80
-80
-85
-85
-90
-90
-95
-95
-100
-105
-110
-100
-105
-110
0.1
1
10
100
0
50 100 150 200 250 300 350 400 450 500
VIN (mVpp)
fIN (kHz)
D023
D024
AMC1304x25-Q1
Figure 28. Total Harmonic Distortion vs
Input Signal Frequency
Figure 29. Total Harmonic Distortion vs
Input Signal Amplitude
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Typical Characteristics (continued)
At LDOIN = 15.0 V, DVDD = 3.3 V, AINP = –50 mV to 50 mV (AMC1304x05-Q1) or –250 mV to 250 mV (AMC1304x25-Q1),
AINN = 0 V, fCLKIN = 20 MHz, and sinc3 filter with OSR = 256, unless otherwise noted.
-60
110
105
100
95
-65
-70
-75
-80
90
-85
85
-90
80
-95
75
-100
-105
-110
70
65
60
0
50
100
150
4
5
0
6
8
10
12
14
16
18
VIN (mVpp)
VLDOIN (V)
D025
D026
AMC1304x05-Q1
Figure 30. Total Harmonic Distortion vs
Input Signal Amplitude
Figure 31. Spurious-Free Dynamic Range vs
LDO Input Supply Voltage
110
105
100
95
110
105
100
95
90
90
85
85
80
80
75
75
70
70
65
65
60
60
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
10
15
20
fCLKIN (MHz)
D027
D028
Figure 32. Spurious-Free Dynamic Range vs Temperature
Figure 33. Spurious-Free Dynamic Range vs
Clock Frequency
110
105
100
95
110
105
100
95
90
90
85
85
80
80
75
75
70
70
65
65
60
60
0.1
1
10
100
50 100 150 200 250 300 350 400 450 500
VIN (mVpp)
fIN (kHz)
D029
D030
AMC1304x25-Q1
Figure 34. Spurious-Free Dynamic Range vs
Input Signal Frequency
Figure 35. Spurious-Free Dynamic Range vs
Input Signal Amplitude
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Typical Characteristics (continued)
At LDOIN = 15.0 V, DVDD = 3.3 V, AINP = –50 mV to 50 mV (AMC1304x05-Q1) or –250 mV to 250 mV (AMC1304x25-Q1),
AINN = 0 V, fCLKIN = 20 MHz, and sinc3 filter with OSR = 256, unless otherwise noted.
110
105
100
95
0
-20
-40
90
-60
85
-80
80
75
-100
-120
-140
70
65
60
0
50
100
150
0
5
10
15
20
25
30
35
40
VIN (mVpp)
Frequency (kHz)
D031
D032
AMC1304x05-Q1
AMC1304x05-Q1, 4096-point FFT, VIN = 100 mVPP
Figure 36. Spurious-Free Dynamic Range vs
Input Signal Amplitude
Figure 37. Frequency Spectrum with 1-kHz Input Signal
0
-20
-40
-60
-80
0
-20
-40
-60
-80
-100
-100
-120
-140
-120
-140
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
Frequency (kHz)
Frequency (kHz)
D034
D033
AMC1304x25-Q1, 4096-point FFT, VIN = 500 mVPP
AMC1304x05-Q1, 4096-point FFT, VIN = 100 mVPP
Figure 39. Frequency Spectrum with 1-kHz Input Signal
Figure 38. Frequency Spectrum with 5-kHz Input Signal
0
10
-20
-40
-60
-80
9
8
7
6
5
4
3
-100
-120
-140
0
5
10
15
20
25
30
35
40
4
6
8
10
12
14
16
18
Frequency (kHz)
VLDOIN (V)
D035
D036
AMC1304x25-Q1, 4096-point FFT, VIN = 500 mVPP
Figure 40. Frequency Spectrum with 5-kHz Input Signal
Figure 41. LDO Input Supply Current vs
LDO Input Supply Voltage
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Typical Characteristics (continued)
At LDOIN = 15.0 V, DVDD = 3.3 V, AINP = –50 mV to 50 mV (AMC1304x05-Q1) or –250 mV to 250 mV (AMC1304x25-Q1),
AINN = 0 V, fCLKIN = 20 MHz, and sinc3 filter with OSR = 256, unless otherwise noted.
12
11
10
9
10
9
8
8
7
7
6
6
5
5
4
3
4
2
1
3
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
5
10
15
20
fCLKIN (MHz)
D037
D038
Figure 42. LDO Input Supply Current vs Temperature
Figure 43. LDO Input Supply Current vs Clock Frequency
12
11
10
9
12
LVDS
CMOS
LVDS
CMOS
11
10
9
8
7
6
5
4
3
2
1
8
7
6
5
4
3
2
1
3
3.1
3.2
3.3
3.4
3.5
3.6
4.5 4.6 4.7 4.8 4.9
5
5.1 5.2 5.3 5.4 5.5
DVDD (V)
DVDD (V)
D039
D040
Figure 44. Controller-Side Supply Current vs
Controller-Side Supply Voltage (3.3 V, min)
Figure 45. Controller-Side Supply Current vs
Controller-Side Supply Voltage (5 V, min)
12
11
10
9
12
11
10
9
LVDS 5 V
LVDS 3.3 V
CMOS 5 V
LVDS 5 V
LVDS 3.3 V
CMOS 5 V
CMOS 3.3 V
CMOS 3.3 V
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
1
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
5
10
15
20
Clock Frequency (MHz)
D041
D042
Figure 46. Controller-Side Supply Current vs Temperature
Figure 47. Controller-Side Supply Current vs
Clock Frequency
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8 Detailed Description
8.1 Overview
The differential analog input (AINP and AINN) of the AMC1304-Q1 is a fully-differential amplifier feeding the
switched-capacitor input of a second-order, delta-sigma (ΔΣ) modulator stage that digitizes the input signal into a
1-bit output stream. The isolated data output (DOUT and DOUT_N) of the converter provides a stream of digital
ones and zeros that is synchronous to the externally-provided clock source at the CLKIN pin with a frequency in
the range of 5 MHz to 20.1 MHz. The time average of this serial bit-stream output is proportional to the analog
input voltage.
The Functional Block Diagram section shows a detailed block diagram of the AMC1304-Q1. The analog input
range is tailored to directly accommodate a voltage drop across a shunt resistor used for current sensing. The
SiO2-based capacitive isolation barrier supports a high level of magnetic field immunity as described in the
ISO72x Digital Isolator Magnetic-Field Immunity application report (SLLA181A), available for download at
www.ti.com. The external clock input simplifies the synchronization of multiple current-sensing channels on the
system level. The extended frequency range of up to 20 MHz supports higher performance levels compared to
the other solutions available on the market.
8.2 Functional Block Diagram
DVDD
VCAP
Voltage Regulator
(LDO)
LDOIN
AINP
BUF
TX
TX
DOUT
DOUT_N
(AMC1304Lx-Q1 only)
-
ûꢀ-Modulator
+
AINN
BUF
TX
CLKIN
CLKIN_N
(AMC1304Lx-Q1 only)
1.25-V
Reference
BUF
TX
AMC1304-Q1
AGND
DGND
Copyright © 2016, Texas Instruments Incorporated
8.3 Feature Description
8.3.1 Analog Input
The AMC1304-Q1 incorporates a front-end circuitry that contains a differential amplifier and sampling stage,
followed by a ΔΣ modulator. The gain of the differential amplifier is set by internal precision resistors to a factor of
4 for devices with a specified input voltage range of ±250 mV (this value is for the AMC1304x25-Q1), or to a
factor of 20 in devices with a ±50-mV input voltage range (for the AMC1304x05-Q1), resulting in a differential
input impedance of 5 kΩ (for the AMC1304x05-Q1) or 25 kΩ (for the AMC1304x25-Q1).
Consider the input impedance of the AMC1304-Q1 in designs with high-impedance signal sources that can
cause degradation of gain and offset specifications. The importance of this effect, however, depends on the
desired system performance. Additionally, the input bias current caused by the internal common-mode voltage at
the output of the differential amplifier causes an offset that is dependent on the actual amplitude of the input
signal. See the Isolated Voltage Sensing section for more details on reducing these effects.
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Feature Description (continued)
There are two restrictions on the analog input signals (AINP and AINN). First, if the input voltage exceeds the
range AGND – 6 V to 3.7 V, the input current must be limited to 10 mA because the device input electrostatic
discharge (ESD) diodes turn on. In addition, the linearity and noise performance of the device are ensured only
when the differential analog input voltage remains within the specified linear full-scale range (FSR), that is
±250 mV (for the AMC1304x25-Q1) or ±50 mV (for the AMC1304x05-Q1), and within the specified input
common-mode range.
8.3.2 Modulator
The modulator implemented in the AMC1304-Q1 is a second-order, switched-capacitor, feed-forward ΔΣ
modulator, such as the one conceptualized in Figure 48. The analog input voltage VIN and the output V5 of the 1-
bit digital-to-analog converter (DAC) are differentiated, providing an analog voltage V1 at the input of the first
integrator stage. The output of the first integrator feeds the input of the second integrator stage, resulting in
output voltage V3 that is differentiated with the input signal VIN and the output of the first integrator V2. Depending
on the polarity of the resulting voltage V4, the output of the comparator is changed. In this case, the 1-bit DAC
responds on the next clock pulse by changing its analog output voltage V5, causing the integrators to progress in
the opposite direction and forcing the value of the integrator output to track the average value of the input.
f/[YLb
ë1
ë2
ë3
ë4
ëLb
Integrator 1
Integrator 2
ꢀ
ꢀ
/at
0 ë
ë5
DAC
Figure 48. Block Diagram of a Second-Order Modulator
The modulator shifts the quantization noise to high frequencies, as shown in Figure 49. Therefore, use a low-
pass digital filter at the output of the device to increase the overall performance. This filter is also used to convert
from the 1-bit data stream at a high sampling rate into a higher-bit data word at a lower rate (decimation). TI's
microcontroller families TMS320F2807x and TMS320F2837x offer a suitable programmable, hardwired filter
structure termed a sigma-delta filter module (SDFM) optimized for usage with the AMC1304-Q1 family.
Alternatively, a field-programmable gate array (FPGA) can be used to implement the digital filter.
0
-20
-40
-60
-80
-100
-120
-140
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
Figure 49. Quantization Noise Shaping
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Feature Description (continued)
8.3.3 Digital Output
A differential input signal of 0 V ideally produces a stream of ones and zeros that are high 50% of the time. A
differential input of 250 mV (for the AMC1304x25-Q1) or 50 mV (for the AMC1304x05-Q1) produces a stream of
ones and zeros that are high 90% of the time. A differential input of –250 mV (–50 mV for the AMC1304x05-Q1)
produces a stream of ones and zeros that are high 10% of the time. These input voltages are also the specified
linear ranges of the different AMC1304-Q1 versions with performance as specified in this data sheet. If the input
voltage value exceeds these ranges, the output of the modulator shows non-linear behavior when the
quantization noise increases. The output of the modulator clips with a stream of only zeros with an input less
than or equal to –312.5 mV (–62.5 mV for the AMC1304x05-Q1) or with a stream of only ones with an input
greater than or equal to 312.5 mV (62.5 mV for the AMC1304x05-Q1). In this case, however, the AMC1304-Q1
generates a single 1 (if the input is at negative full-scale) or 0 every 128 clock cycles to indicate proper device
function (see the Fail-Safe Output section for more details). The input voltage versus the output modulator signal
is shown in Figure 50.
The density of ones in the output bit-stream for any input voltage value (with the exception of a full-scale input
signal, as described in the Output Behavior in Case of a Full-Scale Input section) can be calculated using
Equation 1:
V IN + VClipping
2 * VClipping
(1)
The AMC1304-Q1 system clock is typically 20 MHz and is provided externally at the CLKIN pin. Data are
synchronously provided at 20 MHz at the DOUT pin. Data change at the CLKIN falling edge. For more details,
see the Switching Characteristics table.
Modulator Output
+FS (Analog Input)
-FS (Analog Input)
Analog Input
Figure 50. Analog Input versus AMC1304-Q1 Modulator Output
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8.4 Device Functional Modes
8.4.1 Fail-Safe Output
In the case of a missing high-side supply voltage (LDOIN), the output of a ΔΣ modulator is not defined and can
cause a system malfunction. In systems with high safety requirements, this behavior is not acceptable.
Therefore, the AMC1304-Q1 implements a fail-safe output function that ensures the device maintains its output
level in case of a missing LDOIN, as shown in Figure 51.
/[YLb
[5hLb
5hÜÇ
5hÜÇ
[5hLb Dhh5
[5hLb C!L[
Figure 51. Fail-Safe Output of the AMC1304-Q1
8.4.2 Output Behavior in Case of a Full-Scale Input
If a full-scale input signal is applied to the AMC1304-Q1 (that is, VIN ≥ VClipping), the device generates a single
one or zero every 128 bits at DOUT, depending on the actual polarity of the signal being sensed, as shown in
Figure 52. In this way, differentiating between a missing LDOIN and a full-scale input signal is possible on the
system level.
/[YLb
...
...
5hÜÇ
5hÜÇ
ëLb ≤ -312.5 mV (AMC1304x05-Q1: -61.5 mV)
...
...
...
...
ëLb ≥ 312.5 mV (AMC1304x05-Q1: 61.5 mV)
127 /[YLb cycles
127 /[YLb cycles
Copyright © 2016, Texas Instruments Incorporated
Figure 52. Overrange Output of the AMC1304-Q1
24
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
9.1.1 Digital Filter Usage
The modulator generates a bit stream that is processed by a digital filter to obtain a digital word similar to a
conversion result of a conventional analog-to-digital converter (ADC). A very simple filter, built with minimal effort
and hardware, is a sinc3-type filter, as shown in Equation 2:
3
-OSR
≈
’
1- z
∆
∆
÷
÷
H(z) =
1- z-1
«
◊
(2)
This filter provides the best output performance at the lowest hardware size (count of digital gates) for a second-
order modulator. All the characterization in this document is also done with a sinc3 filter with an oversampling
ratio (OSR) of 256 and an output word duration of 16 bits.
The effective number of bits (ENOB) is often used to compare the performance of ADCs and ΔΣ modulators.
Figure 53 shows the ENOB of the AMC1304-Q1 with different oversampling ratios. In this document, this number
is calculated from the SNR by using Equation 3:
SNR =1.76dB+ 6.02dB*ENOB
(3)
16
14
12
10
8
6
4
sinc1
sinc2
sinc3
2
0
1
10
100
1000
OSR
D053
Figure 53. Measured Effective Number of Bits versus Oversampling Ratio
An example code for implementing a sinc3 filter in an FPGA is discussed in the Combining ADS1202 with FPGA
Digital Filter for Current Measurement in Motor Control Applications application note (SBAA094), available for
download at www.ti.com.
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9.2 Typical Applications
9.2.1 Traction Inverter Application
Isolated ΔΣ modulators are being widely used in new-generation traction inverter designs because of their high
ac and dc performance. Traction inverters are critical parts of electrical and hybrid electrical vehicles. The input
structure of the AMC1304-Q1 is optimized for use with low-impedance shunt resistors and is therefore tailored for
isolated current sensing using shunts.
DC link
Gate Driver
Gate Driver
Gate Driver
RSHUNT
L1
RSHUNT
L3
L2
RSHUNT
Gate Driver
Gate Driver
Gate Driver
AMC1304-Q1
TMS320F28x7x
SD-D1
15 V
LDOIN
DVDD
3.3 V
AINP
AINN
AGND
DOUT
CLKIN
DGND
SD-C1
AMC1304-Q1
15 V
LDOIN
DVDD
3.3 V
AINP
AINN
AGND
DOUT
CLKIN
DGND
SD-D2
SD-C2
AMC1304-Q1
AMC1304-Q1
15 V
LDOIN
DVDD
15 V
LDOIN
DVDD
3.3 V
3.3 V
AINP
AINN
AGND
DOUT
CLKIN
DGND
AINP
AINN
AGND
DOUT
CLKIN
DGND
SD-D3
SD-C3
PWMx
SD-D4
SD-C4
Copyright © 2016, Texas Instruments Incorporated
Figure 54. The AMC1304-Q1 in a Traction Inverter Application
9.2.1.1 Design Requirements
A typical operation of the device in a traction inverter application is shown in Figure 54. When the inverter stage
is part of a motor drive system, measurement of the motor phase current is done via the shunt resistors (RSHUNT).
Depending on the system design, either all three or only two phase currents are sensed.
In this example, an additional fourth AMC1304-Q1 is used to support isolated voltage sensing of the dc link. This
high voltage is reduced using a high-impedance resistive divider before being sensed by the device across a
smaller resistor. The value of this resistor can degrade the performance of the measurement, as described in the
Isolated Voltage Sensing section.
9.2.1.2 Detailed Design Procedure
The typically recommended RC filter in front of a ΔΣ modulator to improve signal-to-noise performance of the
signal path is not required for the AMC1304-Q1. By design, the input bandwidth of the analog front-end of the
device is limited to 1 MHz.
For modulator output bit-stream filtering, a device from TI's TMS320F2807x family of low-cost microcontrollers
(MCUs) or TMS320F2837x family of dual-core MCUs is recommended. These families support up to eight
channels of dedicated hardwired filter structures that significantly simplify system level design by offering two
filtering paths per channel: one providing high accuracy results for the control loop and one fast response path
for overcurrent detection.
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Typical Applications (continued)
9.2.1.3 Application Curve
In motor control applications, a very fast response time for overcurrent detection is required. The time for fully
settling the filter in case of a step-signal at the input of the modulator depends on its order; that is, a sinc3 filter
requires three data updates for full settling (with fDATA = fCLK / OSR). Therefore, for overcurrent protection, filter
types other than sinc3 can be a better choice; an alternative is the sinc2 filter. Figure 55 compares the settling
times of different filter orders.
The delay time of the sinc filter with a continuous signal is half of its settling time.
16
14
12
10
8
6
4
sinc1
sinc2
sinc3
2
0
0
2
4
6
8
10
12
14
16
18
20
settling time (µs)
D054
Figure 55. Measured Effective Number of Bits versus Settling Time
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Typical Applications (continued)
9.2.2 Isolated Voltage Sensing
The AMC1304-Q1 is optimized for usage in current-sensing applications using low-impedance shunts. However,
the device can also be used in isolated voltage-sensing applications if the affect of the (usually higher)
impedance of the resistor used in this case is considered.
High Voltage
Potential
15 V
R1
LDOIN
AINP
AMC1304-Q1
R2
R3
R4
R5
IIB
-
rID
ûꢀ Modulator
+
AINN
R3'
R4'
R5'
AGND
VCM = 2 V
GND
Copyright © 2016, Texas Instruments Incorporated
Figure 56. Using the AMC1304-Q1 for Isolated Voltage Sensing
9.2.2.1 Design Requirements
Figure 56 shows a simplified circuit typically used in high-voltage-sensing applications. The high impedance
resistors (R1 and R2) are used as voltage dividers and dominate the current value definition. The resistance of
the sensing resistor R3 is chosen to meet the input voltage range of the AMC1304-Q1. This resistor and the
differential input impedance of the device (the AMC1304x25-Q1 is 25 kΩ, the AMC1304x05-Q1 is 5 kΩ) also
create a voltage divider that results in an additional gain error. With the assumption of R1, R2, and RIN having a
considerably higher value than R3, the resulting total gain error can be estimated using Equation 4, with EG
being the gain error of the AMC1304-Q1.
R3
EGtot = EG
+
RIN
(4)
This gain error can be easily minimized during the initial system-level gain calibration procedure.
9.2.2.2 Detailed Design Procedure
As indicated in Figure 56, the output of the integrated differential amplifier is internally biased to a common-mode
voltage of 2 V. This voltage results in a bias current IIB through the resistive network R4 and R5 (or R4' and R5')
used for setting the gain of the amplifier. The value range of this current is specified in the Electrical
Characteristics table. This bias current generates additional offset error that depends on the value of the resistor
R3. Because the value of this bias current depends on the actual common-mode amplitude of the input signal (as
illustrated in Figure 57), the initial system offset calibration does not minimize its effect. Therefore, in systems
with high accuracy requirements, TI recommends using a series resistor at the negative input (AINN) of the
AMC1304-Q1 with a value equal to the shunt resistor R3 (that is, R3' = R3 in Figure 56) to eliminate the affect of
the bias current.
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Typical Applications (continued)
This additional series resistor (R3') influences the gain error of the circuit. The effect can be calculated using
Equation 5 with R5 = R5' = 50 kΩ and R4 = R4' = 2.5 kΩ (for the AMC1304x05-Q1) or 12.5 kΩ (for the
AMC1304x25-Q1).
R4
≈
’
÷
E (%) = 1 -
*100%
∆
G
R4'+R3'
«
◊
(5)
9.2.2.3 Application Curve
Figure 57 shows the dependency of the input bias current on the common-mode voltage at the input of the
AMC1304-Q1.
AMC1304x05-Q1
AMC1304x25-Q1
Figure 57. Input Current vs Input Common-Mode Voltage
9.2.3 Do's and Don'ts
Do not leave the inputs of the AMC1304-Q1 unconnected (floating) when the device is powered up. If both
modulator inputs are left floating, the input bias current drives them to the output common-mode of the analog
front end of approximately 2 V that is above the specified input common-mode range. As a result, the front gain
diminishes and the modulator outputs a bitstream resembling a zero input differential voltage.
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10 Power-Supply Recommendations
In a typical traction-inverter application, the high-side power supply (LDOIN) for the device is directly derived
from the floating power supply of the upper gate driver. A low-ESR decoupling capacitor of 0.1 µF is
recommended for filtering this power-supply path. Place this capacitor (C2 in Figure 58) as close as possible to
the LDOIN pin of the AMC1304-Q1 for best performance. If better filtering is required, an additional 10-µF
capacitor can be used. The output of the internal LDO requires a decoupling capacitor of 0.1 µF to be connected
between the VCAP pin and AGND as close as possible to the device.
The floating ground reference (AGND) is derived from the end of the shunt resistor, which is connected to the
negative input (AINN) of the device. If a four-pin shunt is used, the device inputs are connected to the inner leads
and AGND is connected to one of the outer leads of the shunt.
For decoupling of the digital power supply on the controller side, TI recommends using a 0.1-µF capacitor
assembled as close to the DVDD pin of the AMC1304-Q1 as possible, followed by an additional capacitor in the
range of 1 µF to 10 µF.
Floating
Power Supply
HV+
18 V (max)
AMC1304-Q1
3.3 V or 5.0 V
LDOIN
DVDD
C1
C2
C4
C5
Gate Driver
10ꢀF
0.1ꢀF
0.1ꢀF
2.2ꢀF
VCAP
DGND
C3
0.1ꢀF
TMS320F28x7x
SD-Dx
AGND
AINN
AINP
RSHUNT
To Load
DOUT
CLKIN
SD-Cx
PWMx
Gate Driver
Copyright © 2016, Texas Instruments Incorporated
HV-
Figure 58. Decoupling the AMC1304-Q1
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11 Layout
11.1 Layout Guidelines
A layout recommendation showing the critical placement of the decoupling capacitors (as close as possible to the
AMC1304-Q1) and placement of the other components required by the device is shown in Figure 59. For best
performance, place the shunt resistor close to the VINP and VINN inputs of the AMC1304-Q1 and keep the
layout of both connections symmetrical.
For the AMC1304Lx-Q1 version, place the 100-Ω termination resistor as close as possible to the CLKIN,
CLKIN_N inputs of the device to achieve highest signal integrity. If not integrated, an additional termination
resistor is required as close as possible to the LVDS data inputs of the MCU or filter device; see Figure 60.
11.2 Layout Examples
Top View
Clearance area,
to be kept free of any
conductive materials.
1
NC
DGND
NC
16
2.2 µF
0.1 µF
AINP
AINN
AGND
NC
SMD
0603
SMD
0603
DVDD
CLKIN
NC
AMC1304Mxx-Q1
To or From
MCU
(Filter)
0.1 µF
SMD
0603
To Floating
Power
Supply
DOUT
NC
VCAP
AGND
LEGEND
Top Layer:
Copper Pour and Traces
0.1 µF
High-Side Area
SMD
0603
Controller-Side Area
DGND
Via to Ground Plane
Via to Supply Plane
Copyright © 2016, Texas Instruments Incorporated
Figure 59. Recommended Layout of the AMC1304Mx-Q1
Copyright © 2017, Texas Instruments Incorporated
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Layout Examples (continued)
2.2 µF
AINP
AINN
AGND
SMD
0603
0.1 µF
To or From
MCU
SMD
0603
(Filter)
To Floating
Power
Supply
LDOIN
LEGEND
Top Layer:
Copper Pour and Traces
High-Side Area
Controller-Side Area
Via to Ground Plane
Via to Supply Plane
Copyright © 2016, Texas Instruments Incorporated
Figure 60. Recommended Layout of the AMC1304Lx-Q1
32
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12 器件和文档支持
12.1 文档支持
12.1.1 相关文档
相关文档请参阅以下部分：
•
•
•
•
•
TMS320F2807x Piccolo™ 微控制器
《TMS320F2837xD 双核 Delfino™ 微控制器》
隔离相关术语
《ISO72x 数字隔离器磁场抗扰度》
《使用 ADS1202 与 FPGA 数字滤波器的组合测量 测量》
12.2 相关链接
下面的表格列出了快速访问链接。范围包括技术文档、支持与社区资源、工具和软件，并且可通过快速访问立刻订
购。
表 1. 相关链接
器件
产品文件夹
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立即订购
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技术文档
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工具与软件
请单击此处
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支持与社区
请单击此处
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请单击此处
请单击此处
AMC1304L05-Q1
AMC1304L25-Q1
AMC1304M05-Q1
AMC1304M25-Q1
12.3 接收文档更新通知
如需接收文档更新通知，请访问 www.ti.com.cn 网站上的器件产品文件夹。点击右上角的提醒我 (Alert me) 注册
后，即可每周定期收到已更改的产品信息。有关更改的详细信息，请查阅已修订文档中包含的修订历史记录。
12.4 社区资源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.5 商标
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.6 静电放电警告
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可
能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可
能会导致器件与其发布的规格不相符。
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
版权 © 2017, Texas Instruments Incorporated
33
AMC1304L05-Q1, AMC1304L25-Q1, AMC1304M05-Q1, AMC1304M25-Q1
ZHCSFZ4 –FEBRUARY 2017
www.ti.com.cn
13 机械、封装和可订购信息
以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对
本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本，请查阅左侧的导航栏。
34
版权 © 2017, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
AMC1304L05QDWQ1
AMC1304L05QDWRQ1
AMC1304L25QDWQ1
AMC1304L25QDWRQ1
AMC1304M05QDWQ1
AMC1304M05QDWRQ1
AMC1304M25QDWQ1
AMC1304M25QDWRQ1
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
SOIC
SOIC
SOIC
SOIC
SOIC
SOIC
SOIC
SOIC
DW
DW
DW
DW
DW
DW
DW
DW
16
16
16
16
16
16
16
16
40
RoHS & Green
NIPDAU
Level-3-260C-168 HR
Level-3-260C-168 HR
Level-3-260C-168 HR
Level-3-260C-168 HR
Level-3-260C-168 HR
Level-3-260C-168 HR
Level-3-260C-168 HR
Level-3-260C-168 HR
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
1304L05Q1
2000 RoHS & Green
40 RoHS & Green
2000 RoHS & Green
40 RoHS & Green
2000 RoHS & Green
40 RoHS & Green
2000 RoHS & Green
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
1304L05Q1
AMC1304L25
1304L25Q1
1304M05Q1
1304M05Q1
1304M25Q1
1304M25Q1
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
GENERIC PACKAGE VIEW
DW 16
7.5 x 10.3, 1.27 mm pitch
SOIC - 2.65 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4224780/A
www.ti.com
PACKAGE OUTLINE
DW0016B
SOIC - 2.65 mm max height
S
C
A
L
E
1
.
5
0
0
SOIC
C
10.63
9.97
SEATING PLANE
TYP
PIN 1 ID
AREA
0.1 C
A
14X 1.27
16
1
2X
10.5
10.1
NOTE 3
8.89
8
9
0.51
0.31
16X
7.6
7.4
B
2.65 MAX
0.25
C A
B
NOTE 4
0.33
0.10
TYP
SEE DETAIL A
0.25
GAGE PLANE
0.3
0.1
0 - 8
1.27
0.40
DETAIL A
TYPICAL
(1.4)
4221009/B 07/2016
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm, per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm, per side.
5. Reference JEDEC registration MS-013.
www.ti.com
EXAMPLE BOARD LAYOUT
DW0016B
SOIC - 2.65 mm max height
SOIC
SYMM
SYMM
16X (2)
1
16X (1.65)
SEE
DETAILS
SEE
DETAILS
1
16
16
16X (0.6)
16X (0.6)
SYMM
SYMM
14X (1.27)
14X (1.27)
R0.05 TYP
9
9
8
8
R0.05 TYP
(9.75)
(9.3)
HV / ISOLATION OPTION
8.1 mm CLEARANCE/CREEPAGE
IPC-7351 NOMINAL
7.3 mm CLEARANCE/CREEPAGE
LAND PATTERN EXAMPLE
SCALE:4X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL
METAL
0.07 MAX
ALL AROUND
0.07 MIN
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4221009/B 07/2016
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
DW0016B
SOIC - 2.65 mm max height
SOIC
SYMM
SYMM
16X (1.65)
16X (2)
1
1
16
16
16X (0.6)
16X (0.6)
SYMM
SYMM
14X (1.27)
14X (1.27)
8
9
8
9
R0.05 TYP
R0.05 TYP
(9.75)
(9.3)
HV / ISOLATION OPTION
8.1 mm CLEARANCE/CREEPAGE
IPC-7351 NOMINAL
7.3 mm CLEARANCE/CREEPAGE
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:4X
4221009/B 07/2016
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
重要声明和免责声明
TI 均以“原样”提供技术性及可靠性数据（包括数据表）、设计资源（包括参考设计）、应用或其他设计建议、网络工具、安全信息和其他资
源，不保证其中不含任何瑕疵，且不做任何明示或暗示的担保，包括但不限于对适销性、适合某特定用途或不侵犯任何第三方知识产权的暗示
担保。
所述资源可供专业开发人员应用TI 产品进行设计使用。您将对以下行为独自承担全部责任：(1) 针对您的应用选择合适的TI 产品；(2) 设计、
验证并测试您的应用；(3) 确保您的应用满足相应标准以及任何其他安全、安保或其他要求。所述资源如有变更，恕不另行通知。TI 对您使用
所述资源的授权仅限于开发资源所涉及TI 产品的相关应用。除此之外不得复制或展示所述资源，也不提供其它TI或任何第三方的知识产权授权
许可。如因使用所述资源而产生任何索赔、赔偿、成本、损失及债务等，TI对此概不负责，并且您须赔偿由此对TI 及其代表造成的损害。
TI 所提供产品均受TI 的销售条款 (http://www.ti.com.cn/zh-cn/legal/termsofsale.html) 以及ti.com.cn上或随附TI产品提供的其他可适用条款的约
束。TI提供所述资源并不扩展或以其他方式更改TI 针对TI 产品所发布的可适用的担保范围或担保免责声明。IMPORTANT NOTICE
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Copyright © 2020 德州仪器半导体技术（上海）有限公司
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