BQ2004 [TI]

Fast-Charge IC; 快速充电IC
BQ2004
型号: BQ2004
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

Fast-Charge IC
快速充电IC

文件: 总16页 (文件大小:142K)
中文:  中文翻译
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bq2004  
Fast-Charge IC  
of the battery, or switch depression.  
For safety, fast charge is inhibited  
unless/until the battery tempera-  
ture and voltage are within config-  
ured limits.  
Features  
General Description  
Fast charge and conditioning of  
nickel cadmium or nickel-metal  
hydride batteries  
The bq2004 Fast Charge IC provides  
comprehensive fast charge control  
functions together with high-speed  
switching power control circuitry on a  
monolithic CMOS device.  
Temperature, voltage, and time are  
monitored throughout fast charge.  
Fast charge is terminated by any of  
the following:  
Hysteretic PWM switch-mode  
current regulation or gated con-  
trol of an external regulator  
Integration of closed-loop current  
control circuitry allows the bq2004  
to be the basis of a cost-effective so-  
lution for stand-alone and system-  
integrated chargers for batteries of  
one or more cells.  
Easily integrated into systems or  
n
Rate of temperature time  
(T/t)  
used as a stand-alone charger  
Pre-charge qualification of tem-  
n
n
n
n
n
Peak voltage detection (PVD)  
Negative delta voltage (-V)  
Maximum voltage  
perature and voltage  
Switch-activated discharge-before-  
charge allows bq2004-based chargers  
to support battery conditioning and  
capacity determination.  
Configurable, direct LED outputs  
display battery and charge status  
Fast-charge termination by tem-  
perature/time, peak volume de-  
tection, -V, maximum voltage,  
maximum temperature, and maxi-  
mum time  
Maximum temperature  
Maximum time  
High-efficiency power conversion is  
accomplished using the bq2004 as a  
hysteretic PWM controller for  
switch-mode regulation of the charg-  
ing current. The bq2004 may alterna-  
tively be used to gate an externally  
regulated charging current.  
After fast charge, optional top-off  
and pulsed current maintenance  
phases are available.  
Optional top-off charge and  
pulsed current maintenance  
charging  
Fast charge may begin on application  
of the charging supply, replacement  
Logic-level controlled low-power  
mode (< 5µA standby current)  
Pin Names  
Pin Connections  
SNS  
LED1  
LED2  
VSS  
Sense resistor input  
Charge status output 1  
Charge status output 2  
System ground  
DCMD  
DSEL  
VSEL  
Discharge command  
Display select  
DCMD  
DSEL  
VSEL  
1
2
3
4
5
6
16  
15  
14  
13  
12  
11  
INH  
Voltage termination  
select  
DIS  
MOD  
TM1  
TM2  
TCO  
TS  
Timer mode select 1  
Timer mode select 2  
Temperature cutoff  
Temperature sense  
Battery voltage  
VCC  
5.0V 10% power  
TM  
TM  
V
V
1
CC  
2
SS  
MOD  
DIS  
Charge current control  
TCO  
LED  
2
Discharge control  
output  
TS  
7
8
10  
9
LED  
1
BAT  
SNS  
INH  
Charge inhibit input  
BAT  
16-Pin Narrow DIP  
or Narrow SOIC  
PN2004E01.eps  
SLUS063–JUNE 1999 F  
1
bq2004  
Charging current sense input  
SNS  
Pin Descriptions  
SNS controls the switching of MOD based on  
an external sense resistor in the current  
path of the battery. SNS is the reference po-  
tential for both the TS and BAT pins. If  
SNS is connected to VSS, then MOD switches  
high at the beginning of charge and low at  
the end of charge.  
Discharge-before-charge control input  
DCMD  
The DCMD input controls the conditions  
that enable discharge-before-charge. DCMD  
is pulled up internally. A negative-going  
pulse on DCMD initiates a discharge to end-  
of-discharge voltage (EDV) on the BAT pin,  
followed by a new charge cycle start. Tying  
DCMD to ground enables automatic  
discharge-before-charge on every new charge  
cycle start.  
Charge status outputs  
LED1–  
LED2  
Push-pull outputs indicating charging  
status. See Table 2.  
Display select input  
DSEL  
VSEL  
Ground  
VSS  
VCC  
This three-state input configures the charge  
status display mode of the LED1 and LED2  
outputs. See Table 2.  
VCC supply input  
5.0V, 10% power input.  
Charge current control output  
Voltage termination select input  
MOD  
This three-state input controls the voltage-  
termination technique used by the bq2004.  
When high, PVD is active. When floating,  
-V is used. When pulled low, both PVD and  
-V are disabled.  
MOD is a push-pull output that is used to  
control the charging current to the battery.  
MOD switches high to enable charging cur-  
rent to flow and low to inhibit charging  
current flow.  
Timer mode inputs  
TM1–  
TM2  
Discharge control output  
DIS  
Push-pull output used to control an external  
transistor to discharge the battery before  
charging.  
TM1 and TM2 are three-state inputs that  
configure the fast charge safety timer, voltage  
termination hold-off time, “top-off”, and  
trickle charge control. See Table 1.  
Charge inhibit input  
INH  
Temperature cut-off threshold input  
TCO  
When low, the bq2004 suspends all charge  
actions, drives all outputs to high imped-  
ance, and assumes a low-power operational  
state. When transitioning from low to high, a  
new charge cycle is started.  
Input to set maximum allowable battery  
temperature. If the potential between TS  
and SNS is less than the voltage at the TCO  
input, then fast charge or top-off charge is ter-  
minated.  
Temperature sense input  
TS  
Input, referenced to SNS, for an external  
thermister monitoring battery temperature.  
Battery voltage input  
BAT  
BAT is the battery voltage sense input, refer-  
enced to SNS. This is created by a high-  
impedance resistor-divider network con-  
nected between the positive and the negative  
terminals of the battery.  
2
bq2004  
Functional Description  
Discharge-Before-Charge  
Figure 3 shows a block diagram and Figure 4 shows a  
state diagram of the bq2004.  
The DCMD input is used to command discharge-before-  
charge via the DIS output. Once activated, DIS becomes  
active (high) until VCELL falls below VEDV, at which time  
DIS goes low and a new fast charge cycle begins.  
Battery Voltage and Temperature  
Measurements  
The DCMD input is internally pulled up to VCC (its inac-  
tive state). Leaving the input unconnected, therefore,  
results in disabling discharge-before-charge. A negative  
going pulse on DCMD initiates discharge-before-charge  
at any time regardless of the current state of the  
bq2004. If DCMD is tied to VSS, discharge-before-charge  
will be the first step in all newly started charge cycles.  
Battery voltage and temperature are monitored for  
maximum allowable values. The voltage presented on  
the battery sense input, BAT, should represent a  
two-cell potential for the battery under charge.  
resistor-divider ratio of:  
A
RB1  
RB2  
N
2
=
- 1  
Starting a Charge Cycle  
is recommended to maintain the battery voltage within  
the valid range, where N is the number of cells, RB1 is  
the resistor connected to the positive battery terminal,  
and RB2 is the resistor connected to the negative bat-  
tery terminal. See Figure 1.  
A new charge cycle (see Figure 2) is started by:  
1.  
VCC rising above 4.5V  
2. VCELL falling through the maximum cell voltage,  
V
MCV where:  
VMCV = 0.8 VCC 30mV  
Note: This resistor-divider network input impedance to  
end-to-end should be at least 200kand less than 1M.  
3. A transition on the INH input from low to high.  
A ground-referenced negative temperature coefficient ther-  
mistor placed in proximity to the battery may be used as a  
low-cost temperature-to-voltage transducer. The tempera-  
ture sense voltage input at TS is developed using a  
If DCMD is tied low, a discharge-before-charge is exe-  
cuted as the first step of the new charge cycle. Other-  
wise, pre-charge qualification testing is the first step.  
resistor-thermistor network between VCC and VSS  
. See  
The battery must be within the configured temperature  
and voltage limits before fast charging begins.  
Figure 1. Both the BAT and TS inputs are referenced to  
SNS, so the signals used inside the IC are:  
The valid battery voltage range is VEDV < VBAT < VMCV  
where:  
V
BAT - VSNS = VCELL  
and  
TS - VSNS = VTEMP  
VEDV = 0.4 VCC 30mV  
V
The valid temperature range is VHTF < VTEMP < VLTF  
,
where:  
Negative Temperature  
Coefficient Thermister  
V
CC  
PACK +  
RT1  
PACK+  
PACK-  
T
S
RB1  
bq2004  
N
T
C
bq2004  
RT2  
BAT  
RB2  
SNS  
PACK -  
SNS  
Fg2004a.eps  
Figure 1. Voltage and Temperature Monitoring  
3
bq2004  
Charge  
Pending*  
(Pulse-Trickle)  
Dis-  
Top-Off  
Pulse-Trickle  
Fast Charging  
(Optional)  
charge  
(Optional)  
DIS  
260 s  
260 s  
Switch-mode  
Configuration  
MOD  
or  
Note*  
260 s  
2080 s  
260 s  
External  
MOD Regulation  
Note*  
2080 s  
(SNS Grounded)  
Mode 1, LED Status Output  
2
Mode 1, LED Status Output  
1
Mode 2, LED Status Output  
2
Mode 2, LED Status Output  
1
Mode 3, LED Status Output  
2
Mode 3, LED Status Output  
1
Battery within temperature/voltage limits.  
Battery discharged to 0.4 Battery outside  
V
CC.  
*
temperature/voltage limits.  
Discharge-Before-Charge started  
TD200401a.eps  
*See Table 3 for pulse-trickle period.  
Figure 2. Charge Cycle Phases  
4
bq2004  
VLTF = 0.4 VCC 30mV  
sulting sample periods (9.17ms and 18.18ms, respec-  
tively) filter out harmonics centered around 55Hz and  
109Hz. This technique minimizes the effect of any AC  
line ripple that may feed through the power supply from  
either 50Hz or 60Hz AC sources. Tolerance on all tim-  
ing is 16%.  
VHTF = [(1/4 VLTF) + (3/4 VTCO)] 30mV  
Note: The low temperature fault (LTF) threshold is not  
enforced if the IC is configured for PVD termination  
(VSEL = high).  
V
TCO is the voltage presented at the TCO input pin, and is  
configured by the user with a resistor divider between VCC  
and ground. The allowed range is 0.2 to 0.4 VCC  
Voltage Termination Hold-off  
A hold-off period occurs at the start of fast charging.  
During the hold-off period, -V termination is disabled.  
This avoids premature termination on the voltage  
spikes sometimes produced by older batteries when  
fast-charge current is first applied. T/t, maximum  
voltage and maximum temperature terminations are  
not affected by the hold-off period.  
.
If the temperature of the battery is out of range, or the  
voltage is too low, the chip enters the charge pending  
state and waits for both conditions to fall within their al-  
lowed limits. The MOD output is modulated to provide  
the configured trickle charge rate in the charge pending  
state. There is no time limit on the charge pending  
state; the charger remains in this state as long as the  
voltage or temperature conditons are outside of the al-  
lowed limits. If the voltage is too high, the chip goes to  
the battery absent state and waits until a new charge  
cycle is started.  
T/t Termination  
The bq2004 samples at the voltage at the TS pin every  
34s, and compares it to the value measured two samples  
earlier. If VTEMP has fallen 16mV 4mV or more, fast  
charge is terminated. If VSEL = high, the T/t termi-  
nation test is valid only when VTCO < VTEMP < VTCO  
0.2 VCC. Otherwise the T/t termination test is valid  
only when VTCO < VTEMP < VLTF  
+
Fast charge continues until termination by one or more  
of the six possible termination conditions:  
.
n
n
n
n
n
n
Delta temperature/delta time (T/t)  
Peak voltage detection (PVD)  
Negative delta voltage (-V)  
Maximum voltage  
Temperature Sampling  
Each sample is an average of 16 voltage measurements  
taken 57µs apart. The resulting sample period  
(18.18ms) filters out harmonics around 55Hz. This tech-  
nique minimizes the effect of any AC line ripple that  
may feed through the power supply from either 50Hz or  
60Hz AC sources. Tolerance on all timing is 16%.  
Maximum temperature  
Maximum time  
Maximum Voltage, Temperature, and Time  
PVD and -V Termination  
Anytime VCELL rises above VMCV, the LEDs go off and  
charging ceases immediately. If VCELL then falls back be-  
low VMCV before tMCV = 1.5s 0.5s, the chip transitions to  
the Charge Complete state (maximum voltage termina-  
tion). If VCELL remains above VMCV at the expiration of  
tMCV, the bq2004 transitions to the Battery Absent state  
(battery removal). See Figure 4.  
The bq2004 samples the voltage at the BAT pin once  
every 34s. When -V termination is selected, if VCELL is  
lower than any previously measured value by 12mV  
4mV (6mV/cell), fast charge is terminated. When PVD  
termination is selected, if VCELL is lower than any previ-  
ously measured value by 6mV 2mV (3mV/cell), fast  
charge is terminated. The PVD and -V tests are valid  
Maximum temperature termination occurs anytime  
VTEMP falls below the temperature cutoff threshold  
in the range 0.4 VCC < VCELL < 0.8 VCC  
.
VTCO. Unless PVD termination is enabled (VSEL =  
VSEL Input  
Low  
Voltage Termination  
high), charge will also be terminated if VTEMP rises  
above the low temperature fault threshold, VLTF, after  
fast charge begins. The VLTF threshold is not enforced  
when the IC is configured for PVD termination.  
Disabled  
-V  
PVD  
Float  
High  
Maximum charge time is configured using the TM pin.  
Time settings are available for corresponding charge  
rates of C/4, C/2, 1C, and 2C. Maximum time-out termi-  
nation is enforced on the fast-charge phase, then reset,  
and enforced again on the top-off phase, if selected.  
There is no time limit on the trickle-charge phase.  
Voltage Sampling  
Each sample is an average of voltage measurements  
taken 57µs apart. The IC takes 32 measurements in  
PVD mode and 16 measurements in -V mode. The re-  
5
bq2004  
Top-off Charge  
Charge Status Indication  
An optional top-off charge phase may be selected to  
follow fast charge termination for the C/2 through 4C  
rates. This phase may be necessary on NiMH or other  
battery chemistries that have a tendency to terminate  
charge prior to reaching full capacity. With top-off en-  
abled, charging continues at a reduced rate after  
fast-charge termination for a period of time equal to  
the fast-charge safety time (See Table 1.) During top-  
off, the MOD pin is enabled at a duty cycle of 260µs ac-  
tive for every 1820µs inactive. This modulation results  
in an average rate 1/8th that of the fast charge rate.  
Maximum voltage, time, and temperature are the only  
termination methods enabled during top-off.  
Charge status is indicated by the LED1 and LED2 out-  
puts. The state of these outputs in the various charge cy-  
cle phases is given in Table 2 and illustrated in Figure 2.  
In all cases, if VCELL exceeds the voltage at the MCV  
pin, both LED1 and LED2 outputs are held low regard-  
less of other conditions. Both can be used to directly  
drive an LED.  
Charge Current Control  
The bq2004 controls charge current through the MOD  
output pin. The current control circuitry is designed to  
support implementation of a constant-current switching  
regulator or to gate an externally regulated current  
source.  
Pulse-Trickle Charge  
Pulse-trickle charging follows the fast charge and op-  
tional top-off charge phases to compensate for self-  
discharge of the battery while it is idle in the charger.  
The configured pulse-trickle rate is also applied in the  
charge pending state to raise the voltage of an over-  
discharged battery up to the minimum required before  
fast charge can begin.  
When used in switch mode configuration, the nominal  
regulated current is:  
I
REG = 0.225V/RSNS  
Charge current is monitored at the SNS input by the  
voltage drop across a sense resistor, RSNS, between the  
low side of the battery pack and ground. RSNS is sized to  
provide the desired fast charge current.  
In the pulse-trickle mode, MOD is active for 260µs of a  
period specified by the settings of TM1 and TM2. See  
Table 1. The resulting trickle-charge rate is C/64 when  
top-off is enabled and C/32 when top-off is disabled.  
Both pulse trickle and top-off may be disabled by tying  
If the voltage at the SNS pin is less than VSNSLO, the  
MOD output is switched high to pass charge current to  
the battery.  
TM1 and TM2 to VSS  
.
Table 1. Fast-Charge Safety Time/Hold-Off/Top-Off Table  
Corresponding  
Fast-Charge  
Rate  
Typical  
Typical  
Pulse-  
Trickle  
Rate  
Pulse-  
Trickle  
Fast-Charge Safety PVD, -V Hold-Off Top-Off  
TM1  
Low  
TM2  
Low  
Time (minutes)  
Time (seconds)  
Rate  
Period (Hz)  
C/4  
C/2  
1C  
2C  
4C  
C/2  
1C  
2C  
4C  
360  
180  
90  
137  
820  
410  
200  
100  
820  
410  
200  
100  
Disabled Disabled  
Disabled  
240  
120  
60  
Float  
High  
Low  
Low  
Disabled  
Disabled  
Disabled  
Disabled  
C/16  
C/32  
C/32  
C/32  
C/32  
C/64  
C/64  
C/64  
C/64  
Low  
Float  
Float  
Float  
High  
High  
High  
45  
Float  
High  
Low  
23  
30  
180  
90  
120  
60  
C/8  
Float  
High  
45  
C/4  
30  
23  
C/2  
15  
Note:  
Typical conditions = 25°C, VCC = 5.0V.  
6
bq2004  
When used to gate an externally regulated current  
source, the SNS pin is connected to VSS, and no sense re-  
sisitor is required.  
When the SNS voltage is greater than VSNSHI, the MOD  
output is switched low—shutting off charging current to  
the battery.  
VSNSLO = 0.04 VCC 25mV  
VSNSHI = 0.05 VCC 25mV  
Table 2. bq2004 LED Status Display Options  
Mode 1  
DSEL = VSS  
Mode 2  
Charge Status  
LED1  
Low  
High  
Low  
High  
LED1  
Low  
High  
Low  
LED2  
Low  
High  
High  
Low  
LED2  
Low  
Low  
High  
High  
LED2  
Low  
Battery absent  
Fast charge pending or discharge-before-charge in progress  
Fast charge in progress  
Charge complete, top-off, and/or trickle  
Charge Status  
Battery absent, fast charge in progress or complete  
Fast charge pending  
DSEL = Floating  
Mode 3  
Discharge in progress  
Top-off in progress  
High  
LED1  
Low  
Charge Status  
Battery absent  
1/8s high  
1/8s low  
Fast charge pending or discharge-before-charge in progress  
Low  
DSEL = VCC  
Fast charge in progress  
Fast charge complete, top-off, and/or trickle  
Low  
High  
High  
Low  
TM1 TM2  
TCO  
Timing  
Control  
TCO  
Check  
TS  
OSC  
LED1  
LED2  
DSEL  
LTF  
Check  
Display  
Control  
V
- V  
TS SNS  
A/D  
SNS  
BAT  
V
- V  
BAT SNS  
DCMD  
DVEN  
Charge Control  
State Machine  
EDV  
Check  
MOD  
Control  
PWR  
Control  
MCV  
Check  
Discharge  
Control  
DIS  
MOD  
INH  
V
V
CC SS  
BD200401.eps  
Figure 3. Block Diagram  
7
bq2004  
New Charge Cycle Started by  
Any One of:  
Rising Edge  
on DCMD  
V
Rising to Valid Level  
CC  
Yes  
V
Battery Replacement  
DCMD Tied to Ground?  
No  
(V  
Falling through V  
)
CELL  
MCV  
Inhibit (INH) Released  
< V  
Discharge-  
Before-Charge  
CELL  
EDV  
V
< V  
< V  
CELL MCV  
EDV  
Battery Voltage?  
Charge  
Pending  
V
< V  
V
> V  
CELL  
EDV  
CELL  
MCV  
V
> V  
CELL  
MCV  
V
V
> V  
or  
TEMP  
LTF  
< V  
HTF  
TEMP  
V
>
CELL  
Pulse  
Trickle  
V
MCV  
Battery Temperature?  
Charge  
V
< V  
< V  
*
LTF  
HTF  
TEMP  
Battery  
Absent  
V
< V  
< V  
EDV  
CELL  
MCV  
and  
V
< V  
< V  
*
HTF  
TEMP  
LTF  
t > tMCV  
Pulse  
Trickle  
Charge  
Pulse  
Trickle  
Charge  
Fast  
Charge  
V
V
MCV  
>
CELL  
-
V or  
V
V
<
CELL  
MCV  
T/ t or  
V
or  
<
V
TCO  
Charge  
TEMP  
Complete  
V
V
V
V
>
>
CELL  
MCV  
CELL  
MCV  
Maximum Time Out  
Pulse  
Trickle  
Charge  
Top-Off  
Selected?  
Top-Off  
Charge  
Yes  
V
< V  
TCO  
TEMP  
No  
or Maximum  
Time Out  
*VSEL = High disables LTF threshold enforcement  
SD2004.eps  
Figure 4. State Diagram  
8
bq2004  
Absolute Maximum Ratings  
Symbol  
VCC  
Parameter  
VCC relative to VSS  
Minimum  
Maximum  
Unit  
Notes  
-0.3  
+7.0  
V
DC voltage applied on any pin ex-  
cluding VCC relative to VSS  
VT  
-0.3  
+7.0  
V
TOPR  
Operating ambient temperature  
Storage temperature  
-20  
-55  
-
+70  
+125  
+260  
+85  
°C  
°C  
°C  
°C  
Commercial  
TSTG  
TSOLDER  
TBIAS  
Soldering temperature  
10 sec max.  
Temperature under bias  
-40  
Note:  
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional opera-  
tion should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Expo-  
sure to conditions beyond the operational limits for extended periods of time may affect device reliability.  
DC Thresholds (T = T  
; V 10%)  
OPR CC  
A
Symbol  
Parameter  
Rating  
Tolerance  
Unit  
Notes  
High threshold at SNS result-  
ing in MOD = Low  
0.05 VCC  
*
VSNSHI  
0.025  
V
Low threshold at SNS result-  
ing in MOD = High  
VSNSLO  
VLTF  
0.04 * VCC  
0.010  
0.030  
0.030  
0.030  
0.030  
4
V
V
VTEMP VLTF inhib-  
its/terminates charge  
VTEMP VHTF inhibits  
charge  
VCELL < VEDV inhibits  
fast charge  
VCELL > VMCV inhibits/  
terminates charge  
0.4 VCC  
*
Low-temperature fault  
High-temperature fault  
End-of-discharge voltage  
Maximum cell voltage  
(1/4 VLTF) + (2/3 VTCO  
)
VHTF  
VEDV  
VMCV  
VTHERM  
-V  
V
*
*
0.4 VCC  
*
V
0.8 VCC  
*
V
TS input change forT/t  
detection  
VCC = 5V, TA = 25°C  
VCC = 5V, TA = 25°C  
VCC = 5V, TA = 25°C  
-16  
-12  
-6  
mV  
mV  
mV  
BAT input change for -V  
detection  
BAT input change for PVD  
detection  
4
PVD  
2
9
bq2004  
Recommended DC Operating Conditions (T = T  
A
OPR)  
Symbol  
VCC  
Condition  
Supply voltage  
Minimum  
Typical Maximum  
Unit  
V
Notes  
4.5  
0
5.0  
5.5  
VBAT  
Battery input  
-
-
-
-
-
-
-
-
-
VCC  
VCC  
VCC  
VCC  
V
VCELL  
VTS  
VTEMP  
VTCO  
BAT voltage potential  
Thermistor input  
TS voltage potential  
Temperature cutoff  
Logic input high  
Logic input high  
Logic input low  
0
V
VBAT - VSNS  
0
V
0
V
VTS - VSNS  
0.2 VCC  
*
0.4 VCC  
*
V
Valid T/t range  
DCMD, INH  
2.0  
-
V
VIH  
VCC - 0.3  
-
V
TM1, TM2, DSEL, VSEL  
DCMD, INH  
-
-
0.8  
0.3  
V
VIL  
Logic input low  
V
TM1, TM2, DSEL, VSEL  
DIS, MOD, LED1, LED2,  
VOH  
VCC - 0.8  
Logic output high  
Logic output low  
-
-
-
V
V
IOH -10mA  
DIS, MOD, LED1, LED2,  
IOL 10mA  
VOL  
-
0.8  
ICC  
ISB  
IOH  
IOL  
Supply current  
-
-
1
-
3
1
mA Outputs unloaded  
µA  
INH = VIL  
Standby current  
DIS, LED1, LED2, MOD source  
DIS, LED1, LED2, MOD sink  
Input leakage  
-10  
10  
-
-
-
mA @VOH = VCC - 0.8V  
mA @VOL = VSS + 0.8V  
-
-
-
1
µA  
µA  
INH, BAT, V = VSS to VCC  
IL  
Input leakage  
50  
-
400  
DCMD, V = VSS to VCC  
TM1, TM2, DSEL, VSEL,  
V = VSS to VSS + 0.3V  
µA  
µA  
IIL  
Logic input low source  
Logic input high source  
-
-
-
70  
-
TM1, TM2, DSEL, VSEL,  
V = VCC - 0.3V to VCC  
IIH  
-70  
TM1, TM2, DSEL, and VSEL  
should be left disconnected  
(floating) for Z logic input state  
µA  
IIZ  
Tri-state  
-2  
-
2
Note:  
All voltages relative to VSS except as noted.  
10  
bq2004  
Impedance  
Symbol  
Parameter  
Minimum  
Typical  
Maximum  
Unit  
MΩ  
MΩ  
MΩ  
MΩ  
RBAT  
RTS  
Battery input impedance  
TS input impedance  
50  
50  
50  
50  
-
-
-
-
-
-
-
-
RTCO  
RSNS  
TCO input impedance  
SNS input impedance  
Timing (T = 0 to +70°C; V  
10%)  
CC  
A
Symbol  
Parameter  
Minimum Typical Maximum  
Unit  
Notes  
Pulse width for DCMD  
and INH pulse command  
Pulse start for charge or discharge  
before charge  
µs  
tPW  
dFCV  
fREG  
1
-16  
-
-
-
-
-
Time base variation  
16  
%
VCC = 4.75V to 5.25V  
MOD output regulation  
frequency  
300  
kHz  
Maximum voltage termi-  
nation time limit  
Time limit to distinguish battery re-  
moved from charge complete.  
tMCV  
1
-
2
s
Note:  
Typical is at TA = 25°C, VCC = 5.0V.  
11  
bq2004  
16-Pin DIP Narrow (PN)  
(
)
16-Pin PN 0.300" DIP  
Inches  
Millimeters  
Min.  
Dimension  
Min.  
Max.  
0.180  
0.040  
0.022  
0.065  
0.013  
0.770  
0.325  
0.280  
0.370  
0.110  
0.150  
0.040  
Max.  
4.57  
1.02  
0.56  
1.65  
0.33  
19.56  
8.26  
7.11  
9.40  
2.79  
3.81  
1.02  
A
A1  
B
0.160  
0.015  
0.015  
0.055  
0.008  
0.740  
0.300  
0.230  
0.300  
0.090  
0.115  
0.020  
4.06  
0.38  
0.38  
1.40  
0.20  
18.80  
7.62  
5.84  
7.62  
2.29  
2.92  
0.51  
B1  
C
D
E
E1  
e
G
L
S
12  
bq2004  
16-Pin SOIC Narrow (SN)  
(
)
16-Pin SN 0.150" SOIC  
Inches  
Millimeters  
Dimension  
Min.  
Max.  
Min.  
Max.  
1.78  
0.25  
0.51  
0.25  
10.16  
4.06  
1.40  
6.22  
0.89  
D
B
e
A
A1  
B
0.060  
0.004  
0.013  
0.007  
0.385  
0.150  
0.045  
0.225  
0.015  
0.070  
0.010  
0.020  
0.010  
0.400  
0.160  
0.055  
0.245  
0.035  
1.52  
0.10  
0.33  
0.18  
9.78  
3.81  
1.14  
5.72  
0.38  
E
C
D
E
H
e
A
C
H
L
A1  
.004  
L
13  
bq2004  
Data Sheet Revision History  
Change No.  
Page No.  
Description  
Nature of Change  
1
2
10  
9
Standby current ISB  
VBSNSLO Rating  
Was 5 µA max; is 1 µA max  
Was: VSNSHI - (0.01 * VCC  
Is: 0.04 * VCC  
)
2
2
2
2
3
4
5
7
3
Correction in Peak Voltage Detect Termination section Was VCELL; is VBAT  
Added block diagram  
Diagram insertion  
Table insertion  
7
Added VSEL/termination table  
Added values to Table 3  
8
Top-off rate values  
Low, High changed  
Clarification  
7
VSEL/Termination  
All  
9
Revised and expanded format of this data sheet  
Corrected VHTF rating  
Was: (1/3 VLTF) + (2/3 ∗  
VTCO  
)
Is: (1/4 VLTF) + (3/4 VTCO  
)
6
9
TOPR  
Deleted industrial tempera-  
ture range  
Notes:  
Change 1 = Apr. 1994 B “Final” changes from Dec. 1993 A “Preliminary.”  
Change 2 = Sept. 1996 C changes from Apr. 1994 B.  
Change 3 = April 1997 C changes from Sept. 1996 C.  
Change 4 = Oct. 1997 D changes from April 1997 C.  
Change 5 = Jan. 1998 E changes from Oct. 1997 D.  
Change 6 = June 1999 F changes from Jan. 1998 E.  
14  
bq2004  
Ordering Information  
bq2004  
Package Option:  
PN = 16-pin narrow plastic DIP  
SN = 16-pin narrow SOIC  
Device:  
bq2004 Fast-Charge IC  
15  
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any  
product or service without notice, and advise customers to obtain the latest version of relevant information to verify,  
before placing orders, that information being relied on is current and complete. All products are sold subject to the  
terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty,  
patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accor-  
dance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems  
necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, ex-  
cept those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH,  
PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI  
SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR  
USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI  
PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards  
must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that  
any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellec-  
tual property right of TI covering or relating to any combination, machine, or process in which such semiconductor  
products or services might be or are used. TI’s publication of information regarding any third party’s products or ser-  
vices does not constitute TI’s approval, warranty or endorsement thereof.  
Copyright © 1999, Texas Instruments Incorporated  
16  

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