BQ20Z80ADBTR-V110 [TI]
SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK⑩ TECHNOLOGY FOR USE WITH THE bq29312A; SBS 1.1标准的电量监测计启用了阻抗TRACK⑩科技为使用的bq29312A型号: | BQ20Z80ADBTR-V110 |
厂家: | TEXAS INSTRUMENTS |
描述: | SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK⑩ TECHNOLOGY FOR USE WITH THE bq29312A |
文件: | 总22页 (文件大小:483K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
bq20z80
bq20z80A
www.ti.com
SLUS782–JULY 2007
SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK™
TECHNOLOGY FOR USE WITH THE bq29312A
FEATURES
•
38-Pin TSSOP (DBT)
•
Patented Impedance Track™ Technology
Accurately Measures Available Charge in
Li-Ion and Li-Polymer Batteries
APPLICATIONS
•
•
•
Notebook PCs
Medical and Test Equipment
Portable Instrumentation
•
•
•
•
Better than 1% Error Over Lifetime of the
Battery
Instant Accuracy – No Learning Cycle
Required
DESCRIPTION
The bq20z80 SBS-compliant gas gauge IC,
Supports the Smart Battery Specification SBS
V1.1
incorporating
patented
Impedance
Track™
technology, is designed for battery-pack or in-system
installation. The bq20z80 measures and maintains
an accurate record of available charge in Li-ion or
Works With the TI bq29312A Analog
Front-End (AFE) Protection IC to Provide
Complete Pack Electronics Solution
Li-polymer
batteries
using
its
integrated
•
•
•
•
•
Full Array of Programmable Voltage, Current,
and Temperature Protection Features
high-performance analog peripherals. The bq20z80
monitors capacity change, battery impedance,
open-circuit voltage, and other critical parameters of
the battery pack, and reports the information to the
system host controller over a serial-communication
bus. It is designed to work with the bq29312A analog
front-end (AFE) protection IC to maximize
functionality and safety, and minimize component
count and cost in smart battery circuits.
Integrated Time Base Removes Need for
External Crystal with Optional Crystal Input
Electronics for 7.2-V, 10.8-V or 14.4-V Battery
Packs With Few External Components
Based on a Powerful Low-Power RISC CPU
Core With High-Performance Peripherals
Integrated Field Programmable FLASH
Memory Eliminates the Need for External
Configuration Memory
The Impedance Track technology continuously
analyzes the battery impedance, resulting in superior
gas-gauging accuracy. This enables remaining
capacity to be calculated with discharge rate,
temperature, and cell aging all accounted for during
each stage of every cycle.
•
Measures Charge Flow Using a
High-Resolution, 16-Bit Integrating
Delta-Sigma Converter
–
–
–
Better Than 0.65 nVh of Resolution
Self-Calibrating
AVAILABLE OPTIONS
PACKAGE(1)
TA
Offset Error Less Than 1 μV
38-PIN TSSOP (DBT)
Tube
38-PIN TSSOP (DBT)
Tape and Reel
•
Uses 16-Bit Delta-Sigma Converter for
Accurate Voltage and Temperature
Measurements
–40°C to
85°C
bq20z80ADBT(2)
bq20z80DBT(2)
bq20z80ADBTR(3)
bq20z80DBTR(3)
–40°C to
85°C
•
•
•
Extensive Data Reporting Options For
Improved System Interaction
Optional Pulse Charging Feature for Improved
Charge Times
Drives 3-, 4- or 5-Segment LED Display for
Remaining Capacity Indication
(1) For the most current package and ordering information, see
the Package Option Addendum at the end of this document,
or see the TI website at www.ti.com.
(2) A single tube quantity is 50 units.
(3) A single reel quantity is 2000 units
•
•
Supports SHA-1 Authentication
Lifetime Data Logging
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Impedance Track is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007, Texas Instruments Incorporated
bq20z80
bq20z80A
www.ti.com
SLUS782–JULY 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
SYSTEM DIAGRAM
Discharge / Charge /
Precharge FETs
Fuse
Pack +
bq20z80
Precharge Control Fail-Safe Protection
bq29312A
PF Input
PCH FET Drive
Supply V oltage
Power Management
LDO, TOUT, and Power Mode control
Cell Balancing
Drive
Precharge
FET Drive
Temperature Measurement
T
<1% Error
INT
LDO, Therm Output Drive & UVLO
T1
768 Bytes of
User Flash
32-kHz Clock
Generator
System Watchdog
System Interface
Delay Counters
RAM Registers
32 kHz
Cell Balancing Algorithm and Control
SBS v1.1 Data System Interface
bq29312 RAM/Comms Validation
SMBus
2
I
C
XAlert
Sleep
st
st
Power Mode Control
1
Level OC
Protection
1
Level OV and
UV Protection
bq294xx
Pack Undervoltage
Power Mode
Control
Cell and Pack
Voltage
Measurement
2-Tier Overcurrent Protection
Voltage Level Translator
Impedance Track (TM) + Lifetime Data Logging
Pack -
Sense Resistor
(5 m - 20 mW typ)
TSSOP (DBT)
(TOP VIEW)
1
2
3
38
37
36
35
34
33
32
31
VIN
VSSD
NC
TS1
TS2
NC
4
5
PU
PRES
SCLK
SAFE
VDDD
RBI
CLKOUT
XCK1 / VSSA
XCK2 / ROSC
FILT
6
7
8
9
VDDA
VSSA
VSSA
SR1
30
29
28
10
11
12
SDATA
VSSD
SAFE
NC
27
26
25
24
23
22
21
20
SR2
13
14
15
MRST
XALERT
LED1
NC
SMBC
16
17
18
19
SMBD
DISP
LED2
LED3
LED4
PFIN
VSSD
LED5
NC - No internal connection
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bq20z80A
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SLUS782–JULY 2007
TERMINAL FUNCTIONS
TERMINAL
I/O(1)
DESCRIPTION
NO.
1
NAME
VIN
I
Voltage measurement input from the AFE
2
TS1
I
1st Thermistor voltage input connection to monitor temperature
2nd Thermistor voltage input connection to monitor temperature
Output to pull up the PRES pin for system detection
3
TS2
I
O
4
PU
5
PRES
SCLK
SAFE
VDDD
I
Active low input to sense system insertion and typically requires additional ESD protection
Communication clock to the AFE
6
I/OD
O
7
Active high output to enforce additional level of safety protection; e.g., fuse blow. (Inverse of pin 12)
Positive supply for digital circuitry and I/O pins
8
P
Backup power to the bq20z80 data registers during periods of low operating voltage. RBI accepts a
storage capacitor or a battery input.
9
RBI
P
10
12
13
14
15
16
SDATA
SAFE
NC
I/O
O
Data transfer to and from the AFE
Active low output to enforce additional level of safety protection; e.g., fuse blow. (Inverse of pin 7)
Not used— leave floating
–
NC
–
Not used— leave floating
SMBC
SMBD
I/OD
I/OD
SMBus clock open-drain bidirectional pin used to clock the data transfer to and from the bq20z80
SMBus data open-drain bidirectional pin used to transfer address and data to and from the bq20z80
Display control for the LEDs. This pin is typically connected to bq29312A REG via a 100-kΩ resistor
and a push-button switch to VSSD.
17
18
DISP
PFIN
I
I
Active low input to detect secondary protector output status and allows the bq20z80 to report the
status of the 2nd level protection output
20
21
22
23
24
25
26
LED5
LED4
O
O
O
O
O
I
LED5 display segment that drives an external LED depending on the firmware configuration
LED4 display segment that drives an external LED depending on the firmware configuration
LED3 display segment that drives an external LED depending on the firmware configuration
LED2 display segment that drives an external LED depending on the firmware configuration
LED1 display segment that drives an external LED depending on the firmware configuration
Input from bq29312A XALERT output.
LED3
LED2
LED1
XALERT
MRST
I
Master reset input that forces the device into reset when held high
Connections for a small-value sense resistor to monitor the battery charge- and discharge-current
flow
27
SR2
IA
Connections for a small-value sense resistor to monitor the battery charge- and discharge-current
flow
28
31
SR1
IA
P
VDDA
Positive supply for analog circuitry
Analog input connected to the external PLL filter components which are a 150-pF capacitor to VSSA
in parallel with a 61.9-kΩ resistor and a 2200-pF capacitor in series. Place these components as
close as possible to the bq20z80 to ensure optimal performance.
,
32
FILT
IA
32.768-kHz crystal oscillator output pin or connected to a 100-kΩ, 50-ppm or better resistor if the
internal oscillator is used.
33
XCK2/ROSC
O
34
35
XCK1/VSSA
CLKOUT
NC
I
32.768-kHz crystal oscillator input pin or connected to VSSA if the internal oscillator is used
32.768-kHz output for the bq29312. This pin should be directly connected to the AFE.
Not used— leave floating
O
-
36, 37
11, 19, 38
29, 30
VSSD
P
P
Negative supply for digital circuitry
VSSA
Negative supply for analog circuitry.
(1) I = Input, IA = Analog input, I/O = Input/output, I/OD = Input/Open-drain output, O = Output, OA = Analog output, P = Power
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bq20z80A
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SLUS782–JULY 2007
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)(1)
RANGE
(2)
VDDAand VDDD relative to VSS
Supply voltage range
–0.3 V to 4.1 V
–0.3 V to 6 V
(2)
V(IOD) relative to VSS
Open-drain I/O pins
(2)
VI relative to VSS
Input voltage range to all other pins
Operating free-air temperature range
Storage temperature range
–0.3 V to VDDA + 0.3 V
–40°C to 85°C
TA
Tstg
–65°C to 150°C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) VSS refers to the common node of V(SSA) and V(SSD)
.
ELECTRICAL CHARACTERISTICS
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VDDA and VDDD
No flash programming
bq20z80 + bq29312A
Sleep mode
MIN
TYP
3.3
350(1)
MAX UNIT
VDD Supply voltage
3
3.6
V
IDD
Operating mode current
μA
375
8(1)
I(SLP) Low-power storage mode current
μA
μA
bq20z80 + bq29312A
Shutdown Mode
28
0.1(1)
I(SLP) Shutdown Current
bq20z80 + bq29312A
IOL = 0.5 mA
0.1
Output voltage low SMBC, SMBD, SDATA, SCLK, SAFE,
0.4
0.4
V
V
V
SAFE, PU
VOL
LED1 – LED5
IOL = 10 mA
IOH = –1 mA
VOH Output high voltage, SMBC, SMBD, SDATA, SCLK, SAFE,
SAFE, PU
VDD – 0.5
–0.3
VIL
VIH
CIN
Input voltage low SMBC, SMBD, SDATA, SCLK, XALERT,
PRES, PFIN
0.8
V
V
V
DISP
–0.3
2
0.8
6
Input voltage high SMBC, SMBD, SDATA, SCLK, XALERT,
PRES, PFIN
DISP
2
VDD + 0.3
V
Input capacitance
5
pF
V(AI1) Input voltage range VIN, TS1, TS2
V(AI2) Input voltage range SR1, SR2
Z(AI1) Input impedance SR1, SR2
VSS– 0.3
0.8 x VDD
0.25
V
VSS– 0.25
0 V–1 V
0 V–1 V
2.5
8
MΩ
MΩ
Z(AI2) Input impedance VIN, TS1, TS2
(1) This value does not include the bq29312A
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bq20z80A
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SLUS782–JULY 2007
POWER-ON RESET
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
2.1
50
TYP
MAX UNIT
VIT–
Negative-going voltage input
Power-on reset hysteresis
2.3
2.5
V
VHYS
150
200
mV
POWER ON RESET BEHAVIOR
vs
FREE-AIR TEMPERATURE
2.50
2.45
2.40
2.35
2.30
2.25
2.20
140
135
130
125
120
115
110
105
100
V
V
IT-
hys
2.15
2.10
-20 -10
0
10 20 30 40 50 60 70 80
- Free-Air Temperature - °C
T
A
INTEGRATING ADC (Coulomb Counter) CHARACTERISTICS
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
V(SR)
Input voltage range, V(SR2) and V(SR1)
V(SR) = V(SR2) – V(SR1)
–0.25
0.25
V
V(SROS) Input offset
1
μV
INL
Integral nonlinearity error
0.004% 0.019%
PLL SWITCHING CHARACTERISTICS
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
(1)
TEST CONDITIONS
0.5% frequency error
MIN
TYP
MAX
UNIT
t(SP)
Start-up time
2
5
ms
(1) The frequency error is measured from the trimmed frequency of the internal system clock which is 128 oscillator frequency, nominally
4.194 MHz.
OSCILLATOR
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ROSC = 100 kΩ
MIN
TYP
MAX UNIT
–2% 0.25%
–1% 0.25%
2%
1%
f(exo)
Frequency error from 32.768 kHz
ROSC = 100 kΩ, VDD = 3.3 V
XCK1 = 12-pF XTAL
ROSC = 100 kΩ
–0.25%
0.25%
250
200
μs
(1)
f(sxo)
Start-up time
XCK1 = 12-pF XTAL
ms
(1) The start-up time is defined as the time it takes for the oscillator output frequency to be within 1% of the specified frequency.
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bq20z80A
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SLUS782–JULY 2007
DATA FLASH MEMORY CHARACTERISTICS
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
10
TYP
MAX UNIT
Years
(1)
tDR
Data retention
See
See
See
See
(1)
(1)
(1)
Flash programming write-cycles
20,000
Cycles
t(WORDPROG) Word programming time
I(DDPROG) Flash-write supply current
2
ms
8
15
mA
(1) Specified by design. Not production tested
REGISTER BACKUP
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
V(RBI) > 3 V, VDD < VIT
MIN
TYP
MAX UNIT
I(RBI)
RBI data-retention input current
V(RBI) RBI data-retention voltage(1)
10
100
nA
V
1.3
(1) Specified by design. Not production tested.
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bq20z80A
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SLUS782–JULY 2007
SMBus TIMING SPECIFICATIONS
VDD = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
fSMB
SMBus operating frequency
SMBus master clock frequency
Bus free time between start and stop
Hold time after (repeated) start
Repeated start setup time
Stop setup time
Slave mode, SMBC 50% duty cycle
10
100
kHz
fMAS
Master mode, no clock low slave extend
51.2
tBUF
4.7
4
tHD:STA
tSU:STA
tSU:STO
μs
4.7
4
Receive mode
Transmit mode
0
tHD:DAT
Data hold time
300
250
25
4.7
4
ns
tSU:DAT
tTIMEOUT
tLOW
Data setup time
Error signal/detect
Clock low period
Clock high period
(1)
See
35
ms
μs
(2)
tHIGH
See
50
25
(3)
tLOW:SEXT Cumulative clock low slave extend time
tLOW:MEXT Cumulative clock low master extend time
See
ms
ns
(4)
See
10
tF
Clock/data fall time
Clock/data rise time
(VILMAX – 0.15 V) to (VIHMIN + 0.15 V)
0.9 VDD to (VILMAX – 0.15 V)
300
1000
tR
(1) The bq20z80 times out when any clock low exceeds tTIMEOUT
.
(2) tHIGH:MAX. is minimum bus idle time. SMBC = 1 for t > 50 μs causes reset of any transaction involving the bq20z80 that is in progress.
(3) tLOW:SEXT is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to the stop.
(4) tLOW:MEXT is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to the stop.
SMBus TIMING DIAGRAM
7
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bq20z80A
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SLUS782–JULY 2007
FEATURE SET
NOTE
The bq20z80-V102 is designed to work with the bq29312A AFE. The bq20z80
features are only available with the bq29312A.
.
Primary (1st Level) Safety Features
The bq20z80 supports a wide range of battery and system protection features that care easily configured. The
primary safety features includes:
•
•
•
•
•
•
•
Battery cell over/undervoltage protection
Battery pack over/undervoltage protection
2 independent charge overcurrent protection
3 independent discharge overcurrent protection
Short circuit protection
Overtemperature protection
Host watchdog
Secondary (2nd Level) Safety Features
The secondary safety features of the bq20z80 can be used to indicate more serious faults via the SAFE (pin 7)
and SAFE (pin 12) pins. These pins can be used to blow a in-line fuse to permanently disable the battery pack
from charging or discharging. The secondary safety features includes:
•
•
•
•
•
•
•
•
•
•
•
Safety over voltage
Battery cell imbalance
2nd level protection IC input
Safety overcurrent
Safety overtemperature
Open thermistor
Charge FET and 0 Volt Charge FET fault
Discharge FET fault
Fuse blow failure detection
AFE communication error
Internal flash data error
Charge Control Features
The bq20z80 charge control features includes:
•
Report the appropriate charging current needed for constant current charging and the appropriate charging
voltage needed for constant voltage charging to a smart charger using SMBus broadcasts.
•
Determines the chemical state of charge of each battery cell using Impedance Track™ and can reduce the
charge difference of the battery cells in fully charged state of the battery pack gradually using cell balancing
algorithm during charging. This prevents fully charged cells from overcharging causing excessive degradation
and also increases the usable pack energy by preventing to early charge termination
•
•
•
•
•
supports pre-charging/zero-volt charging
support fast charging
supports pulse charging
detects charge termination
report charging faults and also indicate charge status via charge and discharge alarms.
8
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bq20z80A
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SLUS782–JULY 2007
FEATURE SET (continued)
Gas Gauging
The bq20z80 uses the Impedance Track™ Technology to measure and calculate the available charge in battery
cells. The achievable accuracy is better than the coulomb counting method over the lifetime of the battery and
there is no full charge discharge learning cycle required.
See Theory and Implementation of Impedance Track Battery Fuel-Gauging Algorithm application note
(SLUA364) for further details.
LED Display
The bq20z80 can drive 3-, 4-, or 5- segment LED display for remaining capacity indication.
LifeTime Data Logging Features
The bq20z80 offers a lifetime data logging array, where all important measurements are stored for warranty and
analysis purposes. The data monitored includes:
•
•
•
•
•
•
•
•
•
•
•
•
•
Lifetime maximum temperature
Lifetime minimum temperature
Lifetime maximum battery cell voltage
Lifetime minimum battery cell voltage
Lifetime maximum battery pack voltage
Lifetime minimum battery pack voltage
Lifetime maximum charge current
Lifetime maximum discharge current
Lifetime maximum charge power
Lifetime maximum discharge power
Lifetime maximum average discharge current
Lifetime maximum average discharge power
Lifetime average temperature
Authentication
The bq20z80 supports authentication by the host using SHA-1.
Power Modes
The bq20z80 supports 3 different power modes to reduce power consumption:
•
•
•
In Normal Mode, the bq20z80 performs measurements, calculations, protection decision, data update in 1
second intervals. Between these intervals, the bq20z80 is in a reduced power stage.
In Sleep Mode, the bq20z80 performs measurements, calculations, protection decision, data update in
adjustable time intervals. Between these intervals, the bq20z80 is in a reduced power stage.
In Shutdown Mode the bq20z80 is completely disabled.
CONFIGURATION
Oscillator Function
The oscillator of the bq20z80 can be set up for internal or external operation. On power up, the bq20z80
automatically attempts to start the internal oscillator. If a 100-kΩ resistor is not connected to ROSC (pin 33),
then it attempts to start the oscillator using an external 32.768-kHz crystal.
NOTE
Install either the 100-kΩ ROSC resistor or the 12-pF, 32.768-kHz crystal. Do not
install both.
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bq20z80A
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FEATURE SET (continued)
The performance of the internal oscillator depends on the tolerance of the 100-kΩ resistor between RSOC (pin
33) and VSSA (pin 34). Choose a resistor with a tolerance of ±0.1%, and 50-ppm or better temperature drift.
Place this resistor as close as possible to the bq20z80. If a 12-pF crystal is used, place it as close as possible to
the XCK1 (pin 34) and XCK2 (pin 33) pins. If not properly implemented, the PCB layout in this area can degrade
oscillator performance.
System Present Operation
The bq20z80 pulls the PU pin high periodically (1 s). Connect this pin to the PRES pin of the bq20z80 via a
resistor of approximately 5 kΩ. The bq20z80 measures the PRES input during the PU-active period to determine
its state. If PRES input is pulled to ground by external system, the bq20z80 detects this as system present.
BATTERY PARAMETER MEASUREMENTS
The bq20z80 uses an integrating delta-sigma analog-to-digital converter (ADC) for current measurement, and a
second delta-sigma ADC for individual cell and battery voltage, and temperature measurement.
Charge and Discharge Counting
The integrating delta-sigma ADC measures the charge/discharge flow of the battery by measuring the voltage
drop across a small-value sense resistor between the SR1 and SR2 pins. The integrating ADC measures bipolar
signals from -0.25 V to 0.25 V. The bq20z80 detects charge activity when VSR = V(SR1)-V(SR2)is positive and
discharge activity when VSR = V(SR1)-V(SR2) is negative. The bq20z80 continuously integrates the signal over
time, using an internal counter. The fundamental rate of the counter is 0.65 nVh.
Voltage
The bq20z80 updates the individual series cell voltages through the bq29312A at one second intervals. The
bq20z80 configures the bq29312A to connect the selected cell, cell offset, or bq29312A VREF to the CELL pin
of the bq29312A, which is required to be connected to VIN of the bq20z80. The internal ADC of the bq20z80
measures the voltage, scales and calibrates it appropriately. This data is also used to calculate the impedance
of the cell for the Impedance Track™ gas-gauging.
Current
The bq20z80 uses the SR1 and SR2 inputs to measure and calculate the battery charge and discharge current
using a 5 mΩ to 20 mΩ (typical) sense resistor.
Auto Calibration
The bq20z80 provides an auto-calibration feature to cancel the voltage offset error across SR1 and SR2 for
maximum charge measurement accuracy. The bq20z80 performs auto-calibration when the SMBus lines stay
low continuously for a minimum of 5 s.
Temperature
The bq20z80 TS1 and TS2 inputs, in conjunction with two identical NTC thermistors (default are Semitec
103AT), measure the battery environmental temperature. The bq20z80 can also be configured to use its internal
temperature sensor.
COMMUNICATIONS
The bq20z80 uses SMBus v1.1 with Master Mode and package error checking (PEC) options per the SBS
specification.
SMBus On and Off State
The bq20z80 detects an SMBus off state when SMBC and SMBD are logic-low greater than an adjustable
period of time. Clearing this state requires either SMBC or SMBD to transition high. Within 1 ms, the
communication bus is available.
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bq20z80A
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SLUS782–JULY 2007
FEATURE SET (continued)
Table 1. SBS COMMANDS
SBS Commands
SBS Cmd Mode Name
Format
Size in Min
Max
Default Value
Unit
Bytes
Value
Value
0x00
0x01
R/W
R/W
ManufacturerAccess
hex
2
2
0x0000
0
0xffff
—
—
RemainingCapacityAlarm unsigned int
65535
mAh or
10mWh
0x02
0x03
0x04
0x05
0x06
0x07
0x08
0x09
0x0a
0x0b
0x0c
0x0d
0x0e
0x0f
R/W
R/W
R/W
R
RemainingTimeAlarm
BatteryMode
unsigned int
hex
2
2
2
2
2
2
2
2
2
2
1
1
1
2
0
65535
0xffff
—
—
—
—
—
—
—
—
—
—
—
—
—
—
min
0x0000
AtRate
signed int
–32768
32767
65535
65535
65535
65535
20000
32767
32767
100
mA or 10mW
AtRateTimeToFull
AtRateTimeToEmpty
AtRateOK
unsigned int
unsigned int
unsigned int
unsigned int
unsigned int
signed int
0
min
min
R
0
R
0
R
Temperature
0
0.1°K
mV
mA
mA
%
R
Voltage
0
R
Current
–32768
R
AverageCurrent
MaxError
signed int
–32768
R
unsigned int
unsigned int
unsigned int
unsigned int
0
0
0
0
R
RelativeStateOfCharge
AbsoluteStateOfCharge
RemainingCapacity
100
%
R
100
%
R
65535
mAh or
10mWh
0x10
R
FullChargeCapacity
unsigned int
2
0
65535
—
mAh or
10mWh
0x11
0x12
0x13
0x14
0x15
0x16
0x17
0x18
R
RunTimeToEmpty
AverageTimeToEmpty
AverageTimeToFull
ChargingCurrent
ChargingVoltage
BatteryStatus
unsigned int
unsigned int
unsigned int
unsigned int
unsigned int
unsigned int
unsigned int
unsigned int
2
2
2
2
2
2
2
2
0
65535
65535
65535
65535
65535
0xffff
—
—
—
—
—
—
—
min
min
min
mA
mV
R
0
R
0
R
0
R
0
R
0x0000
R/W
R/W
CycleCount
0
0
65535
65535
DesignCapacity
mAh or
10mWh
0x19
0x1a
0x1b
0x1c
0x20
0x21
0x22
0x23
0x2f
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R
DesignVoltage
SpecificationInfo
ManufactureDate
SerialNumber
ManufacturerName
DeviceName
unsigned int
unsigned int
unsigned int
hex
2
7000
16000
0xffff
65535
0xffff
—
14400
0x0031
0
mV
2
0x0000
2
0
2
0x0000
0x0001
String
11+1
7+1
4+1
14+1
20+1
2
—
—
—
—
—
0
Texas Instruments ASCII
String
—
bq20z80
LION
—
ASCII
ASCII
ASCII
ASCII
mV
DeviceChemistry
ManufacturerData
Authenticate
String
—
String
—
R/W
R
String
—
—
0x3c
0x3d
0x3e
0x3f
CellVoltage4
unsigned int
unsigned int
unsigned int
unsigned int
65535
65535
65535
65535
R
CellVoltage3
2
0
mV
R
CellVoltage2
2
0
mV
R
CellVoltage1
2
0
mV
11
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SLUS782–JULY 2007
Table 2. EXTENDED SBS COMMANDS
SBS
Cmd
Mode Name
Format
Size in
Bytes
Min Value
Max Value Default Value Unit
0x45
0x46
0x4f
R
AFEData
String
hex
11+1
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ASCII
%
R/W
R
FETControl
0x00
0
0xff
StateOfHealth
SafetyAlert
unsigned int
hex
1
100
0x50
0x51
0x52
0x53
0x54
0x55
0x57
0x58
0x5a
0x5d
0x60
0x62
0x63
0x64
0x65
0x66
0x70
0x71
0x77
0x78
0x79
0x7a
0x7b
0x7c
0x7d
0x7e
0x7f
R
2
0x0000
0x0000
0x0000
0x0000
0x0000
0x0000
0x0000
0
0xffff
0xffff
0xffff
0xffff
0xffff
0xffff
0xffff
65535
65535
65535
R
SafetyStatus
hex
2
R
PFAlert
hex
2
R
PFStatus
hex
2
R
OperationStatus
ChargingStatus
ResetData
hex
2
R
hex
2
R
hex
2
R
WDResetData
PackVoltage
unsigned int
unsigned int
unsigned int
hex
2
R
2
0
mV
mV
R
AverageVoltage
UnSealKey
2
0
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
4
0x00000000 0xffffffff
0x00000000 0xffffffff
0x00000000 0xffffffff
0x00000000 0xffffffff
0x00000000 0xffffffff
0x00000000 0xffffffff
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
PFKey
hex
4
AuthenKey3
hex
4
AuthenKey2
hex
4
AuthenKey1
hex
4
AuthenKey0
hex
4
ManufacturerInfo
SenseResistor
DataflashClass
DataFlashSubClass1
DataFlashSubClass2
DataFlashSubClass3
DataFlashSubClass4
DataFlashSubClass5
DataFlashSubClass6
DataFlashSubClass7
DataFlashSubClass8
String
unsigned int
hex
8+1
2
—
—
0
65535
0xffff
—
μΩ
2
0x0000
—
hex
32
32
32
32
32
32
32
32
hex
—
—
hex
—
—
hex
—
—
hex
—
—
hex
—
—
hex
—
—
hex
—
—
Firmware Version Changes
bq20z80-V102 to bq20z80-V110 Changes
Table 3. CHANGE DETAILS
CHANGE
bq0z80-V110
bq20z80-V102
COMMENTS
Allows alarm based on
remaining battery energy
DF.Remaining Energy Alarm
added
Feature not available
make bq20z80 compatible to
bq20z90
Permanent fail fuse blow can [PRE_ZT_PF_En] in
be disabled, if IT not enabled DF.Operation Cfg C added
Feature not available
prevents accidental fuse blow
during production and testing
changed max time the LED
stays on after display is
activated
DF.LED Hold Time max time is
16s
DF.LED Hold Time max time is 255s reliable LED display timings
Prevent false detection of
AFE_C
Reset AFE comm and clear the
afe_fail count in case AFE in
unknown comm state at reset
Prevents a AFE_C during a WD
Reset
12
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Table 3. CHANGE DETAILS (continued)
CHANGE
bq0z80-V110
bq20z80-V102
COMMENTS
Proper FET operation in
presence of partial resets
Clear sleep mode flag (and all
Sbscc_control flags) with partial
CHG_off flag set while in SLEEP but
a partial reset would incorrectly clear
and full resets to correct condition this flag
where charge FET can remain
off.
Prevent false detection of PF Force full reset for attempted
shutdown (prevent PF_SHUT
Shutdown does cause a PF
from causing a PF condition if
shutdown does not occur)
Allow shutdown to work
correctly when the part is in
sleep
Fix shutdown when in sleep
A race condition was occurring
between sleep and shutdown that
was not allowing the device to
shutdown when in sleep mode.
Change default charger
present voltage from 12000
to 3000 mv
Change default charger present
voltage from 12000 to 3000 mv
bq29312 will not reliably shutdown
until pack+ voltage is below 3000
mv. Prevents failed shutdown
attempts
Meet SBS specification
Change default DF:Rem Cap
Alarm for mWh mode to 10% of
DF:Design Capacity per SBS
spec from 0
Meet SBS specification
Correct
SBS.AbsoluteStateOfCharge( ) to
allow for values >100% per SBS
the spec
Correct cell balance time
when number of cells < 4
cell balance duty cycle now 0.4
"Cell balancing time per cell has
been changed to be based on the
number of cells configured for use in
Operation Cfg A, as below. Each
number indicates the duty cycle, or
the amount of time the cell
balancing FET is on as opposed to
being off. For example, if the duty
cycle is 0.4, and the cycle time is
250 ms, the cell balancing FET will
be on for 100 ms and off for 150
ms.CC1:CC0 = 3 -> 0.4CC1:CC0 =
2 -> 0.3CC1:CC0 = 1 -> 0.224"
For persistent SC conditions Change Default AFE OC Dsg
Recovery from 100 mA to 5 ma
Set SBS.BatteryMode Alarm and
charger bits default to on if
master broadcasts disabled.
Convenient setup to have
BatteryMode Alarm accurately
indicate broadcast state.
Make RemainingCapacity
writeable
Add State of Health parameter
unused data flash
Remove unused FastCharge
OverVoltage
double dataflash value
Faster wakeup response
Check sleep wakeup every 250
ms, change from 1000 ms
Check sleep wakeup every 1000 ms
bq20z80-V101 to bq20z80-V102 Changes
Table 4. CHANGE DETAILS
CHANGE
bq0z80-V102
bq20z80-V101
COMMENTS
Corrected to allow display to LED display operates correctly
LED display would stay on until
Correct operation of the LED
turn off when charging and
button pushed.
during charging.
charging terminated after the button display under all conditions
was pushed. Only occurs when LED
display not configured to be always
on during charging.
13
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Table 4. CHANGE DETAILS (continued)
CHANGE
bq0z80-V102
bq20z80-V101
Feature not available
COMMENTS
Allow negative LED
thresholds to permit LED
alarms to be disabled
Configuring negative LED alarm
threshold disables LED alarm
functionality.
Allow better customization
Allow zero values for ALARM Configuring zero value for the
Feature not available
Allow better customization
and CHARGING LED blink
rates to disable them
LED blink rates disables them.
Restore initialization of
dodcharge in relaxed state
so that the correct dodcharge
value is used in capacity
estimation
dodcharge initialized to the
correct value
dodcharge value set to zero
Improved gauging accuracy with
correct initialization of dodcharge
value.
Only clear offset calibration
flag when SMBus lines go
high.
Prevents offset calibration
occurring just because a safety
condition occurs and then clears when SMBus lines are low.
when the SMBus lines are low.
Offset calibration occurs multiple
times if safety condition occurs
More appropriate period between
offset calibrations when SMBus
lines are low.
Change so that setting AFE
Fail Limit to zero disables
PF_AFE_C
Configurable option to allow
disabling PF_AFE_C trigger
Feature not available.
Allow better customization
Enable LED display to turn
off after charge termination
and if SMBus lines are
detected low and LEDs
enabled during charging.
LED display turns off after charge LED display stays on when charging Correct operation of the LED
termination.
terminates after SMBus lines are
detected low.
display under all conditions
Set charge FET state
immediately when entering
sleep
Charge FET state set correctly,
immediately after entering sleep
The CHG FET would not get set to
the correct state for sleep until the
first voltage measurement.
Quicker transition of FET to the
correct state in sleep
Change DF:Operation Cfg B Data flash default bases
DF:Operation Cfg B [CCT = 1],
Data flash default changed to
reflect common customer usage
[CCT = 0], so that
SBS.CycleCount( ) calculation on making the default
SBS.CycleCount( ) threshold mAh and not % of FCC
is in mAH, not in % of FCC
SBS.CycleCount( ) calculation to be
based on % of FCC
When DF:Operation Cfg B
[CCT = 1], so that
SBS.CycleCount( ) threshold incrementing of the
Use DF:CC Threshold as the
minimum to prevent rapid
Small or negative SBS.Full Charge
Capacity( ) values (should not occur
under normal operation) from
Improved system reliability
is % of FCC, then DF:CC
Threshold is used as a
minimum for the
SBS.Cyclecount( ), damaging the causing the SBS.CycleCount( )
data flash
incrementing rapidly, potentially
damaging the data flash
SBS.CycleCount( ) threshold
When exiting the relaxed
state to sleep, the initial
charge capacity is correctly
calculated
Corrected initial charge capacity
calculation to be accurate when
exiting relaxed state to sleep
If the relaxed state was exited to
sleep after a valid DOD
More reliable
SBS:FullChargeCapacity( )
calculation under all system
conditions
measurement (30-minute default
value), then the initial charge
capacity would not be recalculated
and would result in an incorrect FCC
value if the sleep state was exited
before another valid DOD
measurement (30-minute default
value)
Correct update of Remcap in Charge or discharge current
If the relaxed state was exited after More reliable
relaxed state to use passed
charge
accumulated in a relaxed state
used to update Remcap
the accumulation of significant
charge or discharge current (over at SBS:RemainingCapacity( )
SBS:FullChargeCapacity( )
most 100 seconds with default
values), the RemCap and FCC
would be in error by this charge.
This is only significant if the relaxed
state can exist with significant
current as determined by application
settings.
calculation under all system
conditions
14
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Table 4. CHANGE DETAILS (continued)
CHANGE
bq0z80-V102
bq20z80-V101
COMMENTS
More reliable resistance updates
Implement disable of
Prevent invalid soc values from
causing incorrect resistance
updates
Incorrect resistance updates that
could result from invalid soc values under all system conditions
resistance update based on
accumulative scale. If the
product of 15 consecutive
(default value) resistance
scale factors is less than 0.5
or more than 1.5, then
resistance update is disabled
until the next valid soc
measurement. Sets bit 2 of
Operation Status to indicate
resistance update disabled.
Implement disable of
Prevent invalid soc values from
causing incorrect resistance
updates
Incorrect resistance updates that
could result from invalid soc values under all system conditions
More reliable resistance updates
resistance update based on
estimated capacity error.
Sets bit 2 of Operation Status
to indicate resistance update
disabled.
Disable Qmax increment if
due to Grid 14 and exit of
discharge
Prevent unnecessary Qmax
increments
Qmax increments can occur due to Improved Qmax data reliability
Grid 14 and exit of discharge
under all system conditions.
Drive all unused pins low
Provides better ESD immunity
Not all unused pins driven low
Improved ESD immunity
More reliable
Initial charge capacity
calculation when dod0 is
measured in the
Overdischarged state does not
affect the accuracy of FCC
calculations
An incorrect initial charge capacity
affects FCC that is calculated during SBS:FullChargeCapacity( )
discharge or a Qmax update. If FCC SBS:RemainingCapacity( )
overdischarged state is
corrected
is not changed by a Qmax update,
then reported RemainingCapacity
could be negative after 5 hours of
relaxation
calculation under all system
conditions
Correct calculation of FCC
and RemCap when dod0 is
taken when the battery is
overdischarged or
overcharged. This allows
RemCap to go negative, or
greater than FCC (though is
only reported from 0 - FCC).
Overcharged/Overdischarged
does not affect the accuracy of
FCC and RemCap calculations
The RemainingCapacity will
increment (or decrement) during
charging (discharging) even when
the battery is in an overdischarged
(overcharged) state.
More reliable
SBS:FullChargeCapacity( )
SBS:RemainingCapacity( )
calculation under all system
conditions
Change cell imbalance
New feature providing improved
Feature not available
Improved customization for Cell
Imbalance detection
DF:Battery Rest Time from 1 customization
byte to 2 bytes and set the
default value to 1800
seconds
Use upper and lower limit for
resistance accumulative
scale. Set default values to
300% and 30%.
More reliable resistance updates
under all system conditions
Add DF:CF MaxError limit for New feature providing improved
Feature not available
Improved customization
setting SBS.BatteryMode( )
[CONDITION FLAG]. Set
default value to 100%.
customization
Use SBS.AtRate( ),
More reliable
UserRate and C/5 rate for
relaxed capacity calculation,
respectively, if set by Load
Select; otherwise, use
previous rate.
SBS:FullChargeCapacity( )
SBS:RemainingCapacity( )
calculation under all system
conditions
Correct Host Watchdog from Host Watchdog functionality not
Host Watchdog reset by alarm or
charger broadcasts
Reliable Host Watchdog
functionality under all system
conditions
being reset by broadcasts
affected by alarm or charger
broadcasts
15
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Table 4. CHANGE DETAILS (continued)
CHANGE
bq0z80-V102
bq20z80-V101
Feature not available
COMMENTS
Improved information access
The voltage table chemistry
ID can be read by writing
0x0008 to
New feature providing more
information
ManufacturerAccess and
then reading from
ManufacturerAccess. The
default chemistry ID is
0x0100
SBS.BatteryMode( ) is
Customization allows for
Feature not available
Improved customization
initialized on high transition
preserving SBS.BatteryMode( )
of the SMBus lines to DF:Init settings through SMBus line
BatteryMode, instead of
always clearing
transitions
SBS.BatteryMode( ) defined
bits on high transition of the
SMBus lines.
Broadcast timers are set
Broadcast timer accurate
Broadcast timer accuracy required a Improved broadcast timing
correctly on high transition of regardless of CC offset
SMBus lines. The timers are calibration or entry to sleep
set to 10 seconds on high
CC offset calibration and entry to
sleep.
accuracy to meet Smart Battery
Data spec
transition of SMBus lines.
bq20z80 to bq20z80-V101 Changes
CHANGE
bq20z80
bq20z80-V101
COMMENTS
Added authentication (optional SBS
command 0x2f)
Command 0x2f has no function and is Command 0x2f is the
Additional feature to enable host to
authenticate the battery
not acknowledged.
SBS.Authenticate( ) command to the
bq20z80 to begin the SHA1
authentication.
Added Cell Balancing
Cell balancing not available
Added State of Charge cell balancing Additional feature to enable longer
algorithm lifetime of battery
Added charge fault FET Enable
register
When charge faults occur, FET action When charge faults occur, FET action Adds flexibility to system interaction
is taken.
is taken if enabled in DF:FET Enable
register.
Added pulse compensation for end of Applications with pulsed current loads The voltage pulses caused by pulsed Added additional feature to improve
discharge
and minimum voltage requirements
can have less RemainingCapacity
than reported.
current loads are measured and used capacity prediction
to better estimate RemainingCapacity.
Added SBS.BatteryStatus( ) [TDA,
FD] voltage thresholds
SBS.BatteryStatus( ) [TDA, FD] are
only set on SBS.RSOC, detection of
charge termination or faults
SBS.BatteryStatus( ) [TDA, FD] are
now set and cleared based on
SBS.Voltage( )
Adds flexibility to system interaction
Added option for LEDs in series with
current source
LED display is only in parallel.
LED display is available in series
(with current source) or parallel.
Adds capability for higher brightness
LEDs
Configured pin 7 as active high fuse
blow
Pin 7 is not connected.
Pin 7 is now an active high reflection
of SAFE (pin 12).
Adds flexibility to choose different
circuits driven by the permanent
failure signal
Added State of Health calculation
(command 0x4f)
Command 0x4f has no function and is Command 0x4f is the
Additional feature to allow host to
easily determine health of the battery
not acknowledged.
SBS.StateOfHealth( ) command
where SOH is the ratio of
SBS.DesignCapacity( ) to
SBS.FullChargeCapacity( ).
Added Synchronization of
SBS.RemainingCapacity( ) to
SBS.FullChargeCapcity( ) at charge
taper termination.
SBS.RemainingCapacity( ) is not
affected and could be < 100% at
charge termination.
If DF:Operation Cfg [RMFCC] is set
then SBS.RemainingCapacity( ) is
updated to the value of
SBS.FullChargeCapcity( ) at charge
termination.
Adds option to enable charge
synchronization in order to display
RelativeStateOfCharge as 100% at
charge termination
Improved thermal model
A preliminary thermal mode was
used.
An updated thermal model is used.
Improved thermal compensation of
Impedance Track™ algorithm
Improved cell capacity measurement
by limiting valid temperature ranges
Valid voltage measurements for cell
capacity estimation can occur at any
temperature.
Valid voltage measurements for cell
capacity estimation must occur within
a defined temperature range.
Improves capacity estimation
Improved cell capacity measurement
Improved default resistance tables
After a full reset, it may take several
minutes for voltage reading to settle
to the most accurate reading.
Settling time of voltage
measurements after a full reset is
reduced.
Improves initial voltage reading
accuracy
A preliminary default resistance mode An updated default resistance mode
was used.
Improved thermal accuracy of
Impedance Track™ algorithm
is used.
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CHANGE
bq20z80
bq20z80-V101
COMMENTS
Prevented lifetime updates until IT is
enabled
Data flash lifetime data is updated
under all conditions.
Data flash lifetime data is not updated Improves suitability of lifetime data
until Impedance Track™ is enabled.
Aligned SBS.RemainingCapacity( )
with DF:Terminate Voltage
SBS.RemainingCapacity( ) could be
above zero when SBS.Voltage( )
reaches DF:Terminate Voltage.
Forces SBS.RemainingCapacity( ) to
zero when SBS.Voltage( ) is below
terminate voltage
Improves alignment between
reporting and system status
Disabled LEDs for undervoltage
conditions
When SBS.OperationStatus( ) [CUV
or PUV] is set, then the LED display
could be activated.
When SBS.OperationStatus( ) [CUV
or PUV] is set, the LED display is
disabled.
Reduces risk of deeply discharging
the battery
Clear SBS.BatteryStatus( ) [RCA]
when not SBS.BatteryStatus( ) [DSG] cleared when SBS.BatteryStatus( )
[DSG] is cleared.
SBS.BatteryStatus( ) [RCA] is not
SBS.BatteryStatus( ) [RCA] is now
cleared when SBS.BatteryStatus( )
[DSG] is cleared.
Corrected to meet SBS specification
Allowed sleep mode for undervoltage When SBS.OperationStatus( ) [CUV
When SBS.OperationStatus( ) [CUV
or PUV] is set, then entry to sleep
mode is allowed.
Reduces risk of deeply discharging
the battery
conditions
or PUV] is set, then entry to sleep
mode is disabled.
Improvements made to Lifetime data
Does not save maximum and
Saves maximum and minimum
lifetime AverageCurrent and
AveragePower. Lifetime data is saved
after a defined period of time even if
new values do not exceed old values
by defined delta values
Improves lifetime data
minimum lifetime AverageCurrent or
AveragePower. Only saves lifetime
data when new values exceed old
values by defined delta values
Changes made to pulse charging
Changes made to charging timeouts
Voltages for pulse charging are
sampled once a second.
Voltages for pulse charging are
sampled 4 times a second.
Improves pulse charging
The precharge timeout timer runs
when the charging current is below a timeout timers only run when
The fast charge and precharge
Improves operation of fast charge and
precharge timeout timers
defined threshold; so, it is possible
that the precharge timer will run
during charging taper current and
cause an undesired precharge
timeout during charging taper.
precharging or charging, as indicated
by FCHG and PCHG bits in
ChargingStatus.
Changes made to discharge faults
Discharging fault is indicated
Discharging fault is indicated for any
Improves indication of discharging
whenever BatteryStatus [TDA] is set. safety condition resulting in turning off fault conditions
Current discharging fault is not
the discharge FET. Current
indicated for current faults detect by
discharging fault is indicated for all
AFE. Separate discharging faults are detected overcurrent conditions,
indicated for voltage and temperature. including overcurrent detected by
AFE. Temperature and voltage
discharge faults are not indicated
separately.
Improvements made to calibration
functions
Voltage calibration functions may
cause error in voltage calibration of
several millivolts.
Voltage calibration functions are
capable of accuracy within 1 millivolt.
Improved voltage calibration accuracy
Increased robustness of data flash
Protect against simultaneous writes to A SMBus-initiated data flash write
A SMBus-initiated data flash write
data flash
may occur at the same time as a data cannot occur at the same time as any writes
flash write initiated by the AGG, which other data flash write.
my cause a data flash write error.
Corrected
SBS.ManufacturerAccess( ) access of SBS.ManufacturerAccess( ) access of Allows host to determine bq20z80
SBS.ManufacturerAccess( ) access of silicon revision is not functional.
silicon revision is functional.
silicon revision
silicon revision
Corrected data flash checksum
operation
The data flash checksum includes
non-accessible portions of the data
flash that change when writing the
The data flash checksum only
includes data flash that does not
change when writing an updated data
Data flash checksum operation works
correctly.
data flash checksum, invalidating the flash checksum.
checksum.
Corrections made to LED display
Fixed LED thresholds cannot be
selected.
Fixed LED thresholds can be
selected.
Correct operation of LED threshold
settings
Erroneous readings are corrected that Erroneous SBS voltage, current, and
occurred after offset calibration when temperature readings occur after
No erroneous SBS voltage, current,
and temperature readings occur after
Improve reliability of lifetime data
sleep mode is not entered.
current offset calibration if sleep mode current offset calibration if sleep mode
is not entered, corrupting the lifetime
data.
is not entered.
Corrected the length of
SBS.ManufacturerData( ) command
SBS.ManufactureData( ) returned
additional data not specified in the
data sheet.
Only returns the appropriate data
Correct data set made available to
host
Changed DF:Charger Present default DF:Charger Present default was
Default changed to 12000 mV.
More realistic default for most
applications
voltage to 12000 mV
16800 mV.
Corrected LED display lock-up fault
when exiting sleep with LEDs on
LED display locks up if LEDs are ON LED display operates normally
Correct operation of the LED display
as the bq20z80 exits sleep mode.
regardless of power state transitions. under all conditions
17
Submit Documentation Feedback
bq20z80
bq20z80A
www.ti.com
SLUS782–JULY 2007
CHANGE
Added report of any inability to write
bq20z80
bq20z80-V101
COMMENTS
Improved calibration system
If writing the data flash is not allowed The inability to write data flash in
DFF as flash write error in calibration either due to a permanent failure or calibration mode is reported as a flash interaction
mode
low voltage, then no indication is
given when attempting to write data
flash in calibration mode.
write error.
Corrected issue of improperly clearing AFE faults were detected and the
AFE faults are correctly handled,
Improved system interaction when
faults occur
AFE faults
pack protected but the fault would be including the flags.
cleared up to three times at an
interval of 250 milliseconds before the
defined recovery requirements would
apply.
Modified code to save open-circuit
OCV data was saved after a full reset OCV tables are only updated when IT Improved OCV data reliability under
voltage (OCV) data on IT enable only, which could have disturbed the OCV
enabled, or the IT enable command is all system conditions
resent.
not a full reset
measurements if the battery was not
in a completely relaxed state.
Corrected range check for calibration In calibration mode, if the
In calibration mode, if the
Improved calibration system
of analog-to-digital converter (ADC)
offset
measurement ADC offset was out of
range, no error would be reported.
measurement ADC offset is out of
range, an error is reported.
interaction
Implemented a validation time for
DOD0
There is a possibility of erroneous
DOD0 measurement if charge or
discharge current occurs at the same relaxed state for a defined time after
DOD0 measurement is not saved
unless the battery remains in the
More reliable
SBS.FullChargeCapacity( ) and
SBS.RemainingCapacity under all
system conditions
time.
the DOD0 measurement is made.
Implemented a bounds limit to a
QMAX change
QMAX changes are not limited to
filter-bad readings.
QMAX changes are bounds limited to More reliable
filter-bad readings.
SBS.FullChargeCapacity( ) and
SBS.RemainingCapacity under all
system conditions
Implemented a double hit for dv/dt
detection for QMAX qualification
The dv/dt qualification for QMAX
update requires only one sample to
be valid.
The dv/dt qualification for QMAX
update requires two samples to be
valid.
More reliable
SBS.FullChargeCapacity( ) and
SBS.RemainingCapacity( ) under all
system conditions
Corrected parameter update issue
caused by exiting sleep mode during
current measurement
If bq20z80 exits sleep during a
current measurement, the SBS
parameters do not update again until
the pack enters and exits sleep mode
again.
SBS parameter updates operate
normally regardless of power state
transitions.
Improved system interaction for sleep
mode transitions
Implemented an option to leave
charge FET on for a nonremovable
pack in sleep mode, enabled by
DF:Operation Cfg B [NRCHG].
When DF:Operation Cfg B [NR] is set, When DF:Operation Cfg B [NR,
then the CHG is turned off at entry to NRCHG] are set, then the CHG
Improved system interaction options
sleep mode.
remains on at entry to sleep mode.
Modified code such that if QMAX has Valid OCV is only discarded when all If QMAX has been updated, the same Enables QMAX measurement for full
not been updated, old valid OCV
readings are discarded when a new
valid OCV reading is detected and the the measured capacity exceeds 1%
conditions for QMAX update are
satisfied, but the accumulated error in reading are the same as for the
bq20z80. Otherwise, old OCV
conditions for discarding an OCV
charge or discharge for the first
QMAX update, even if initial OCV
measurement is made when battery is
conditions for QMAX update do not
exist.
(default value).
readings are discarded and new OCV only partially charged.
readings are used when the
conditions for a valid OCV reading
exist, but the conditions for QMAX
update do not exist.
Modified code such that if QMAX has The measured capacity must be
For the first QMAX, the measured
Improved QMAX data reliability for the
not been updated, then for QMAX
update to occur, the measured
capacity must be greater than or
equal to 90% (default value) of design update to occur.
capacity.
greater than 20% (default value) or a capacity must be greater than 90%
first update of QMAX
value as determined from the QMAX
update filter constant for a QMAX
(default value) for a QMAX update to
occur. If QMAX update has occurred
the conditions for measured capacity
are the same as for the bq20z80.
Default minimum passed charge for
QMAX update has been changed
from 20% to 37%
Internal flash value of Min Passed
Internal flash value of Min Passed
Charge is 20%. The default setting for Charge is 37%. This 37% is
the QMAX update filter constant of 64 consistent with the QMAX update
means actual Min Passed Charge for filter constant of 96.
QMAX update is 25%.
Improved QMAX data reliability under
all system conditions.
Default QMAX update filter constant
has been changed from 64 to 94.
Internal flash value of QMAX update
filter is 64.
Internal flash value of QMAX update
filter is 94.
Improved QMAX data reliability under
all system conditions.
QMAX values for nonexistent cells will DF:Qmax Cell 2..4 written with
DF:Qmax Cell 2..4 are updated to =
Ensure all QMAX values are
be updated to Design Capacity.
random values if not used when
QMAX is updated
DF:Design Capacity if not used when reasonable, even if not used
QMAX is updated.
18
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PACKAGE OPTION ADDENDUM
www.ti.com
13-Mar-2008
PACKAGING INFORMATION
Orderable Device
BQ20Z80ADBT-V110
BQ20Z80ADBTR-V110
BQ20Z80DBT
Status (1)
ACTIVE
ACTIVE
ACTIVE
NRND
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
TSSOP
DBT
38
38
38
38
38
38
38
38
50 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
DBT
DBT
DBT
DBT
DBT
DBT
DBT
2000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
50 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
BQ20Z80DBT-V110
BQ20Z80DBTG4
50 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
ACTIVE
ACTIVE
NRND
50 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
BQ20Z80DBTR
2000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
BQ20Z80DBTR-V110
BQ20Z80DBTRG4
2000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
ACTIVE
2000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0 (mm)
B0 (mm)
K0 (mm)
P1
W
Pin1
Diameter Width
(mm) W1 (mm)
(mm) (mm) Quadrant
BQ20Z80ADBTR-V110 TSSOP
DBT
DBT
DBT
38
38
38
2000
2000
2000
330.0
330.0
330.0
16.4
16.4
16.4
6.9
6.9
6.9
10.2
10.2
10.2
1.8
1.8
1.8
12.0
12.0
12.0
16.0
16.0
16.0
Q1
Q1
Q1
BQ20Z80DBTR
TSSOP
TSSOP
BQ20Z80DBTR-V110
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
BQ20Z80ADBTR-V110
BQ20Z80DBTR
TSSOP
TSSOP
TSSOP
DBT
DBT
DBT
38
38
38
2000
2000
2000
346.0
346.0
346.0
346.0
346.0
346.0
33.0
33.0
33.0
BQ20Z80DBTR-V110
Pack Materials-Page 2
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