BQ24140YFFR [TI]

Fully Integrated Dual-Input Switch-Mode One-Cell Li-Ion Charger with Full USB Compliance and USB-OTG Support; 完全集成的双输入开关模式单节锂离子电池充电器与USB完全遵守和USB -OTG支持
BQ24140YFFR
型号: BQ24140YFFR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

Fully Integrated Dual-Input Switch-Mode One-Cell Li-Ion Charger with Full USB Compliance and USB-OTG Support
完全集成的双输入开关模式单节锂离子电池充电器与USB完全遵守和USB -OTG支持

电源电路 电池 开关 电源管理电路
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中文:  中文翻译
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bq24140  
www.ti.com  
SLUSAO5 OCTOBER 2011  
Fully Integrated Dual-Input Switch-Mode One-Cell Li-Ion Charger with Full USB  
Compliance and USB-OTG Support  
Check for Samples: bq24140  
1
FEATURES  
Programmable Charge Parameters Through  
I2C Interface (up to 3.4 Mbps):  
High-Efficiency Mini-USB/AC Battery Charger  
for Single-Cell Li-Ion and Li-Polymer Battery  
Packs  
Input Current  
Fast-Charge/Termination Current  
Charge Voltage (3.5-4.44V)  
Safety Timer with Reset Control  
Safety Timer with Reset Control  
Termination Enable  
Charge Battery and Provide USB-OTG Support  
at the Same Time  
High-Accuracy Voltage and Current Regulation  
Input Current Regulation Accuracy: ±5%  
(100mA, 500mA)  
Synchronous Fixed-Frequency PWM  
Controller Operating at 3 MHz With 0% to  
99.5% Duty Cycle  
Charge Voltage Regulation Accuracy:  
±0.5% (25°C), ±1% (0-125°C)  
Charge Current Regulation Accuracy: ±5%  
Automatic High Impedance Mode for Low  
Power Consumption  
Boost Mode Operation for USB OTG:  
Input Voltage Range (from Battery): 2.3V to  
4.5V  
Robust Protection  
Reverse Leakage Protection Prevents  
Battery Drainage  
Output for VBUS: 5.05V/500 mA  
Input Voltage Based Dynamic Power  
Management Provides Protection Against  
Current Limited Adapters  
Thermal Regulation and Protection  
Input/Output Over Voltage Protection  
Status Output for Charging and Faults  
USB Friendly Boot-Up Sequence  
Bad Adaptor Detection and Rejection  
Safety Limit Register for Added Security by  
Limiting Maximum Charge Voltage and  
Maximum Charge Current  
2.35 × 2.65 mm 30-pin WCSP Package  
APPLICATIONS  
20-V Absolute Maximum Input Voltage Rating  
9.0-V Maximum Operating Input Voltage  
Charge Faster than Linear Chargers  
Mobile Phones and Smart Phones  
MP3 Players  
Handheld Devices  
Built-in Input Current Sensing and Limiting  
Integrated Power FETs for up to 1.5-A Charge  
Rate  
4.7 mF  
4.7 mF  
PMID1  
PMID2  
1 mH  
68 mW  
AC Adapter or  
SW1  
VIN  
10 µF  
47 µF  
Wireless Power  
100 nF  
1 mF  
PACK+  
PACK-  
BOOT1  
SW2  
+
1 mH  
VBUS  
USB Adapter  
4.7 mF  
100 nF  
BOOT2  
10 kW  
10 kW  
10 kW  
10 kW  
CSIN  
VBAT  
SCL  
SDA  
STAT  
OTG  
SLRST  
DIS  
10 kW  
10 kW  
VREF  
GND  
1 mF  
VREG  
LED  
HOST  
0.1 mF  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2011, Texas Instruments Incorporated  
bq24140  
SLUSAO5 OCTOBER 2011  
www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
DESCRIPTION  
The bq24140 is a compact, flexible, high-efficiency, USB-friendly switch-mode charge management device for  
single-cell Li-ion and Li-polymer batteries used in a wide range of portable applications. The charge parameters  
can be programmed through an I2C interface. The IC integrates two synchronous PWM chargers, power  
MOSFETs, input current sensing, high-accuracy current and voltage regulation, and charge termination, into a  
small WCSP package.  
The IC charges the battery in three phases: conditioning, constant current and constant voltage. The input  
current is automatically limited to the value set by the host. Charge is terminated based on user-selectable  
minimum current level. A safety timer with reset control provides a safety backup for I2C interface. During normal  
operation, the IC automatically restarts the charge cycle if the battery voltage falls below an internal threshold  
and automatically enters sleep mode or high impedance mode when the input supply is removed. The charge  
status can be reported to the host using the I2C interface. During the charging process, the IC monitors its  
junction temperature (TJ) and reduces the charge current once TJ increases to 125°C typical. To support USB  
OTG device, the IC can provide VBUS (5.05V typical) by boosting the battery voltage. The IC is available in  
30-pin WCSP package.  
DEVICE INFORMATION  
PIN OUT (TOP VIEW)  
1
2
3
4
5
A
B
C
D
E
F
BOOT  
VREF  
VREG  
SDA  
BOOT1  
VIN  
PMID2  
SW2  
GND  
LED  
VIN  
PMID2  
SW2  
SCL  
SLRST  
DIS  
VBUS  
PMID1  
SW1  
VBUS  
PMID1  
SW1  
GND  
OTG  
GND  
CSIN  
GND  
GND  
VBAT  
STAT  
PIN FUNCTIONS  
PIN  
I/O  
DESCRIPTION  
NAME  
NO.  
Boot-strapped capacitor for the high-side MOSFET gate driver. Connect a 100nF ceramic capacitor (voltage  
rating above 10V) from BOOT pin to SW2 pin.  
BOOT  
A1  
O
VREF  
VREG  
SDA  
A2  
A3  
A4  
O
O
Internal bias regulator voltage. Connect a 1µF ceramic capacitor from this output to PGND.  
Voltage regulator. 2.5V with 10mA current capability. Connect a 0.1μF ceramic capacitor to ground  
I/O I2C interface data. Connect a 10-kpull-up resistor to 1.8V rail.  
Boot-strapped capacitor for the high-side MOSFET gate driver. Connect a 100nF ceramic capacitor (voltage  
rating above 10V) from BOOT1 pin to SW1 pin.  
BOOT1  
A5  
O
VIN  
B1 B2  
I
I
Charger input voltage. Bypass it with a 1μF ceramic capacitor from VIN to GND.  
I2C interface clock. Connect a 10-kpull-up resistor to 1.8V rail.  
SCL  
B3  
Charger input voltage. Bypass it with a 4.7μF ceramic capacitor from VBUS to GND. This pin also provides the  
output of the boost converter when in Boost Mode.  
VBUS  
B4 B5 I/O  
Connection point between reverse blocking FET and high-side switching FET. Bypass it with a minimum of  
3.3μF capacitor from PMID2 to GND.  
PMID2  
C1 C2  
O
2
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Product Folder Link(s): bq24140  
bq24140  
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SLUSAO5 OCTOBER 2011  
PIN FUNCTIONS (continued)  
PIN  
I/O  
DESCRIPTION  
NAME  
NO.  
Safety limit register control. When SLRST = 0, all the safety limit values are reset to default values, regardless  
of the write actions to the safety limits registers. When SLRST = 1, the host can program the safety limits  
register until any write action to other registers locks the programmed safety limits.  
SLRST  
C3  
I
Connection point between reverse blocking FET and high-side switching FET. Bypass it with a minimum of  
3.3μF capacitor from PMID1 to GND.  
PMID1  
SW2  
C4 C5  
D1 D2  
O
O
Internal switch to output inductor connection.  
Charge disable control pin. DIS=0, charge is enabled. DIS=1, charge is disabled. VIN and VBUS pins are high  
impedance to PGND. In 15min mode, DIS=1 will reset the 15min timer; while in 32s mode, DIS=1 will NOT  
reset the 32-second timer.  
DIS  
D3  
I
SW1  
GND  
LED  
D4 D5  
E1 E5  
F1  
O
Internal switch to output inductor connection.  
Ground pins.  
O
I
High side LED driver. Current, on and off times can be programmed through I2C to select different modes.  
Boost mode enable control and VBUS input current limiting selection pin. When OTG is in active status per the  
control register, VBUS converter will be forced to operate in boost mode. It has higher priority over I2C control  
and can be disabled through control register. The polarity of OTG active status can also be controlled.  
OTG  
F2  
At POR, the OTG control register is ignored and the OTG pin is used as the input current limiting selection pin  
for VBUS converter. When OTG=High, IIN_LIMIT=500mA and when OTG=Low, IIN_LIMIT=100mA.  
Charge current-sense input. Battery current is sensed via the voltage drop across an external sense resistor. A  
0.1μF ceramic capacitor to GND is required.  
CSIN  
VBAT  
F3  
F4  
I
I
Battery voltage and current sense input. Bypass it with a ceramic capacitor (minimum 0.1µF) to GND if there  
are long inductive leads to battery.  
Charge status pin. Pull low when charge in progress. Open drain for other conditions. During faults, a 128µS  
pulse is sent out. STAT pin can be disabled by the EN_STAT bit in control register. STAT can be used to drive  
a LED or communicate with a host processor.  
STAT  
F5  
O
ABSOLUTE MAXIMUM RATINGS(1)  
over operating free-air temperature range (unless otherwise noted)  
VALUE  
UNIT  
MIN  
MAX  
Supply voltage range (with respect  
VBUS, VIN  
to GND)  
2  
20  
V
V
Input voltage range (with respect  
to and GND)  
SCL, SDA, OTG, CSIN, VREG, VBAT, SLRST, DIS, LED  
0.3  
0.3  
7
PMID1, PMID2, STAT  
VREF  
20  
6.5  
Output voltage range (with respect  
to and GND)  
V
BOOT, BOOT1  
SW1, SW2  
0.7  
0.7  
20  
12  
Voltage difference between CSIN and VBAT inputs (VCSIN -VBAT)  
±7  
V
mA  
A
Output sink  
STAT  
10  
Output current (average)  
SW1, SW2  
1.5(2)  
+85  
+125  
+150  
TA Operating free-air temperature range  
30  
40  
45  
°C  
°C  
°C  
TJ  
Junction temperature range  
Tstg Storage temperature  
Human body model at all pins  
Machine model  
±2000  
±100  
±500  
ESD  
V
Rating(3)  
Charge device model  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) Duty cycle for output current should be less than 50% for 10- year life time when output current is above 1.25A  
(3) The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin.  
Copyright © 2011, Texas Instruments Incorporated  
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bq24140  
SLUSAO5 OCTOBER 2011  
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UNITS  
THERMAL INFORMATION  
bq24140  
THERMAL METRIC(1)  
WCSP PACKAGE  
30 PINS  
79.5  
0.3  
θJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
θJCtop  
θJB  
Junction-to-board thermal resistance  
44.4  
0.3  
°C/W  
ψJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
ψJB  
44.4  
n/a  
θJCbot  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.  
RECOMMENDED OPERATING CONDITIONS  
MIN NOM MAX UNIT  
VBUS  
VIN  
TJ  
Supply voltage  
4.0  
4.0  
6(1)  
9(1)  
V
V
Supply voltage  
Operating junction temperature range  
40  
125 °C  
(1) The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BOOT or SW pins. A tight  
layout minimizes switching noise.  
ELECTRICAL CHARACTERISTICS  
Circuit of Figure 1, VBUS = 5V, HZ_MODE=0, OPA_MODE=0, CD=0, TJ = 40°C125°C and TJ = 25°C for typical values  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP MAX  
UNIT  
INPUT CURRENTS  
VBUS > VMIN, PWM switching  
10  
mA  
μA  
IVBUS  
VBUS supply current for control  
VIN supply current for control  
VBUS > VMIN, PWM NOT switching  
0°C < TJ < 85°C, CD = 1 or HZ_MODE = 1  
VIN > VMIN, PWM switching  
5
33  
10  
80  
mA  
VIN > VMIN, PWM NOT switching  
5
IVIN  
0°C < TJ < 85°C, CD = 1 or HZ_MODE = 1, No load on  
VREG  
150  
μA  
μA  
Leakage current from battery to VBUS pin  
and / or VIN  
IIN_LEAK  
0°C < TJ < 85°C, VVBAT = 4.2 V, High Impedance mode  
5
Battery discharge current in high  
impedance mode, (CSIN, VBAT, SW  
pins)  
0°C < TJ < 85°C, VVBAT = 4.2 V, High Impedance mode,  
SCL,SDA,OTG=0V or 1.8V  
23  
μA  
VOLTAGE REGULATION  
VOREG Output charge voltage  
Operating in voltage regulation, programmable  
3.5  
4.44  
V
TA = 25°C  
0.5%  
0.5%  
0.75  
%
Over recommended operating temperature  
0.75%  
0.6%  
Voltage regulation accuracy  
4.1 V 4.35 V range, over recommended operating  
temperature  
0.4%  
CURRENT REGULATION -FAST CHARGE  
VIN, VLOWV VVBAT < VOREG, VIN > VSLP,  
RSNS = 68 mΩ, LOW_CHG=0, Programmable  
550  
550  
1550  
1250  
350  
VBUS, VLOWV VVBAT < VOREG, VBUS > VSLP,  
RSNS = 68 mΩ LOW_CHG = 0, Programmable  
IOCHARGE  
Output charge current  
mA  
VLOWV VVBAT < VOREG, VBUS > VSLP,  
325  
RSNS=68 mΩ LOW_CHG=1  
Regulation accuracy for charge current  
across RSNS, VIREG = IOCHARGE × RSNS  
37.4 mV VIREG  
-3%  
3%  
WEAK BATTERY DETECTION  
VLOWV Weak battery voltage threshold  
Programmable  
3.4  
3.7  
5%  
V
Weak battery voltage accuracy  
5%  
4
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bq24140  
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SLUSAO5 OCTOBER 2011  
ELECTRICAL CHARACTERISTICS (continued)  
Circuit of Figure 1, VBUS = 5V, HZ_MODE=0, OPA_MODE=0, CD=0, TJ = 40°C125°C and TJ = 25°C for typical values  
PARAMETER  
TEST CONDITIONS  
Rising voltage, 2-mV over drive, tRISE = 100 ns  
Battery voltage falling  
MIN  
TYP MAX  
UNIT  
Deglitch time for weak battery threshold  
Hysteresis for VLOWV  
30  
ms  
100  
mV  
DIS, SLRST and OTG PIN LOGIC LEVEL  
VIL  
VIH  
Input low threshold level  
Input high threshold level  
0.4  
V
V
1.3  
50  
CHARGE TERMINATION DETECTION  
V
VBAT > VOREG-VRCH , VBUS > VSLP, RSNS = 68 mΩ,  
ITERM  
Termination charge current  
400  
mA  
ms  
Programmable  
Deglitch time for charge termination  
Both rising and falling, 2-mV overdrive, tRISE, tFALL = 100 ns  
3.4 mV VIREG_TERM 6.8mV  
30  
-35%  
12.5%  
6%  
35%  
Regulation accuracy for termination  
current across RSNS VIREG_TERM = IOTERM  
× RSNS  
12.5  
%
6.8 mV < VIREG_TERM 13.6 mV  
13.6mV < VIREG_TERM 30 mV  
6%  
BAD ADAPTOR DETECTION  
VIN(MIN)  
Input voltage lower limit  
Bad adaptor detection  
3.7  
3.8  
30  
4.0  
V
Deglitch time for VBUS rising above  
VIN(MIN)  
Rising voltage, 2-mV overdrive, tRISE = 100 ns  
ms  
Hysteresis for VIN(MIN)  
Current source to GND  
Detection interval  
Input voltage rising  
100  
20  
200  
40  
mV  
mA  
S
ISHORT  
TINT  
During bad adaptor detection  
Input power source detection  
30  
2
INPUT BASED DYNAMIC POWER MANAGEMENT  
The threshold when input based DPM  
loop kicks in  
VIN_LOW  
Charge mode, programmable  
4.2  
4.76  
+2%  
V
DPM loop kick-in threshold tolerance  
2%  
INPUT CURRENT LIMITING  
TJ = 0°C125ºC  
88  
86  
93  
93  
98  
98  
IIN = 100mA  
mA  
mA  
TJ = 40ºC125ºC  
IIN_LIMIT  
Input current limit  
TJ = 0ºC125ºC  
450  
440  
475  
475  
500  
500  
IIN = 500mA  
TJ = 40ºC125ºC  
VREF BIAS REGULATOR  
VREF Internal bias regulator voltage  
VREF output short current limit  
BATTERY RECHARGE THRESHOLD  
V
IN > VREF, IVREF = 1 mA, CVREF = 1 μF  
5.5  
90  
6.5  
V
30  
mA  
VRCH  
Recharge threshold voltage  
Deglitch time  
Below VOREG  
120  
130  
160  
mV  
ms  
VVBAT decreasing below threshold, tFALL = 100 ns, 10-mV  
overdrive  
STAT OUTPUT  
Low-level output saturation voltage,  
STAT pin  
VOL  
IO = 10 mA, sink current  
0.55  
1
V
High-level leakage current for STAT  
Voltage on STAT pin is 5V  
μA  
LED OUTPUT  
VLED_MIN  
Minimum LED operating voltage  
LED current, programmable  
2.5  
V
ILED1 = L, ILED0 = L  
ILED1 = L, ILED0 = H  
ILED1 = H, ILED0 = L  
ILED1 = H, ILED0 = H  
0
1.35  
2.7  
ILED  
mA  
5.4  
LED current accuracy  
20%  
+20%  
200  
VDO  
TON  
Drop-out voltage of LED  
VBAT = 2.5 V  
100  
100  
mV  
Turn on time for current source  
(10%90%)  
μs  
Turn off time for current source  
(90%10%)  
TOFF  
100  
μs  
I2C BUS LOGIC LEVELS AND TIMING CHARTERISTICS  
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SLUSAO5 OCTOBER 2011  
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ELECTRICAL CHARACTERISTICS (continued)  
Circuit of Figure 1, VBUS = 5V, HZ_MODE=0, OPA_MODE=0, CD=0, TJ = 40°C125°C and TJ = 25°C for typical values  
PARAMETER  
Output low threshold level  
Input low threshold level  
Input high threshold level  
Input bias current  
TEST CONDITIONS  
MIN  
TYP MAX  
UNIT  
VOL  
VIL  
IO = 10 mA, sink current  
0.4  
0.4  
V
V(pull-up) = 1.8 V, SDA and SCL  
V(pull-up) = 1.8 V, SDA and SCL  
V(pull-up) = 1.8 V, SDA and SCL  
V
VIH  
1.2  
V
I(bias)  
fSCL  
1
μA  
MHz  
SCL clock frequency  
3.4  
BATTERY DETECTION  
Battery detection current before charge  
IDETECT  
tDETECT  
tDETECT2  
Begins after termination detected  
-0.5  
262  
262  
mA  
ms  
ms  
done (sink current)(1)  
Battery detection time  
Battery detection time after linear charge  
is complete and PWM starts  
SLEEP COMPARATOR  
Sleep-mode entry threshold, VBUS-VVBAT  
or VIN VVBAT  
VSLP  
2.3 V VVBAT VOREG, VBUS or VIN falling  
2.3 V VVBAT VOREG  
0
40  
110  
30  
100  
200  
mV  
mV  
ms  
VSLP-EXIT  
Sleep-mode exit hysteresis  
70  
Deglitch time for VBUS or VIN rising above  
VSLP+VSLP_EXIT  
Rising voltage, 2-mV over drive, tRISE = 100 ns  
UNDER-VOLTAGE LOCKOUT (UVLO)  
VUVLO  
VUV_HYS  
PWM  
IC active threshold voltage  
IC active hysteresis  
VBUS or VIN rising  
3.05  
90  
3.3  
3.65  
V
VBUS or VIN falling from above VUVLO  
100  
mV  
Voltage from BOOT1 pin to SW1 pin, or  
Voltage from BOOT2  
VBOOT  
6.5  
V
pin to SW2 pin  
Internal top reverse blocking MOSFET  
on-resistance  
RON_Q1  
RON_Q2  
RON_Q3  
RON_Q4  
RON_Q5  
IIN_LIMIT = 500 mA, Measured from VIN to PMID2  
Measured from PMID2 to SW2, VBOOT2 VSW2 = 4 V  
Measured from SW2 to GND  
100  
120  
110  
100  
120  
150  
200  
200  
150  
200  
200  
mΩ  
mΩ  
mΩ  
mΩ  
mΩ  
Internal top N-channel Switching  
MOSFET on-resistance  
Internal bottom N-channel MOSFET  
on-resistance  
Internal top reverse blocking MOSFET  
on-resistance  
IIN_LIMIT = 500 mA, Measured from VBUS to PMID1  
Measured from PMID1 to SW1, VBOOT1 VSW1 = 4 V  
Measured from SW1 to GND  
Internal top N-channel Switching  
MOSFET on-resistance  
Internal bottom N-channel MOSFET  
on-resistance  
RON_Q6  
fOSC  
110  
3.0  
mΩ  
Oscillator frequency  
Frequency accuracy  
Maximum duty cycle  
Minimum duty cycle  
MHz  
10%  
10%  
DMAX  
DMIN  
99.5%  
100  
0
Synchronous mode to non-synchronous  
mode transition current threshold(2)  
Low-side MOSFET cycle-by-cycle current sensing  
mA  
CHARGE MODE PROTECTION  
VOVP-VIN  
VOVP-VBUS  
VOVP  
Input OVP for VIN  
Rising edge  
Rising edge  
9.6  
6.3  
9.8  
140  
6.5  
170  
117  
11  
10.0  
6.7  
V
mV  
V
VOVP VIN hysteresis  
Input OVP for VBUS  
VOVP VBUS hysteresis  
Output OVP threshold voltage  
VOVP hysteresis  
mV  
VVBAT threshold over VOREG to turn off charger during charge  
Lower limit for VVBAT falling from above VOVP  
Charge mode operation  
110  
121 %VOREG  
%VOREG  
ILIMIT  
Cycle-by-cycle current limit for charge  
Trickle to fast charge threshold  
VSHORT hysteresis  
1.8  
2.0  
2.4  
2.1  
100  
30  
3.0  
2.2  
A
V
VSHORT  
VVBAT rising  
mV  
mA  
ISHORT  
Trickle charge charging current  
VVBAT VSHORT  
20  
40  
(1) Negative charge current means the charge current flows from the battery to charger (discharging battery).  
(2) Bottom N-channel MOSFET always turns on for ~60 ns and then turns off if current is too low.  
6
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bq24140  
www.ti.com  
SLUSAO5 OCTOBER 2011  
ELECTRICAL CHARACTERISTICS (continued)  
Circuit of Figure 1, VBUS = 5V, HZ_MODE=0, OPA_MODE=0, CD=0, TJ = 40°C125°C and TJ = 25°C for typical values  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP MAX  
UNIT  
BOOST MODE OPERATION FOR VBUS (OPA_MODE=1, HZ_MODE=0, VBUS input only)  
VBUS_BOOST  
Boost output voltage (to VBUS pin)  
Boost output voltage accuracy  
2.5 V < VVBAT < 4.5 V  
5.05  
+3%  
V
Including line and load regulation  
VBUS = 5.05 V, 2.5 V < VVBAT < 4.5 V  
VBUS = 5.05 V, 2.5 V < VVBAT < 4.5 V  
-3%  
650  
IBOOST  
IBLIMIT  
Maximum output current for boost  
Cycle by cycle current limit for boost  
mA  
A
1.0  
Over voltage protection threshold for  
boost (VBUS pin)  
VBUSOVP  
Threshold over VBUS to turn off converter during boost  
VBUS falling from above VBUSOVP  
5.8  
6.0  
162  
6.2  
V
mV  
V
VBUSOVP hysteresis  
Maximum battery voltage for boost (VBAT  
pin)  
VBATMAX  
VVBAT rising edge during boost  
4.65  
4.75  
4.85  
VBATMAX hysteresis  
VVBAT falling from above VBATMAX  
During boosting  
70  
2.3  
2.8  
mV  
Minimum battery voltage for boost (VBAT  
pin)  
VBATMIN  
V
Before boost starts  
2.97  
Boost output resistance at  
high-impedance mode (From VBUS to  
PGND)  
CD = 1 or HZ_MODE = 1  
500  
kΩ  
µA  
ICC_BOOS Operation quiescent current in boost  
No load at VBUS, power save mode, VVBAT = 4 V, boosting  
650  
T
mode  
PROTECTION  
TSHTDWN  
Thermal trip  
165  
10  
°C  
°C  
°C  
S
Thermal hysteresis  
TCF  
Thermal regulation threshold  
Time constant for the 32-second timer  
Time constant for the 15-minute timer  
Charge current begins to taper down  
32 second mode  
120  
32  
T32S  
15  
12  
T15M  
15 minute mode  
15 Minute  
VREG  
VREG  
ILIM VREG  
VREG Regulator  
ILOAD = 1mA, CREG = 0.1µF, VIN > VUVLO  
2.34  
10  
2.6  
2.86  
V
Current limit VREG  
VREG = 0V  
mA  
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TYPICAL APPLICATION CIRCUITS  
VIN=5V or VBUS=5V, ICHARGE = 1550mA, VBAT = 3.5--4.44V (Adjustable), Safety Timer = 15 minutes or 32 seconds  
4.7 mF  
4.7 mF  
PMID2  
SW1  
PMID1  
1 mH  
68 mW  
AC Adapter or  
VIN  
10 µF  
47 µF  
Wireless Power  
1 mF  
100 nF  
PACK+  
BOOT1  
SW2  
1 mH  
+
VBUS  
USB Adapter  
PACK-  
4.7 mF  
100 nF  
BOOT2  
10 kW  
10 kW  
10 kW  
CSIN  
VBAT  
SCL  
SDA  
STAT  
OTG  
SLRST  
DIS  
10 kW  
10 kW  
VREF  
GND  
10 kW  
1 mF  
LED  
VREG  
HOST  
0.1 mF  
Figure 1. I2C Controlled 1-Cell USB and AC or Wireless Power Charger Application Circuit  
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VIN=5V or VBUS=5V, ICHARGE = 1550mA, VBAT = 3.5--4.44V (Adjustable), Safety Timer = 15 minutes or 32 seconds  
BLOCK DIAGRAM  
PMID2  
PMID2  
Q1  
Q2  
SW2  
SW2  
VIN  
VIN  
CBC Current  
Limit  
OSC  
Charge  
Pump  
VREF  
+
PWM Controller  
Q3  
VIN_DPM  
-
+
-
IIN_LIM  
CBC Current  
Limit  
PMID1  
PMID1  
VBUS  
VBUS  
Q5  
Q4  
SW1  
SW1  
PMID2  
Charge  
Pump  
VREF  
2.5V, 10mA (back  
to back switches)  
VREG  
+
Q6  
VBUS_DPM  
-
CSIN  
VBAT  
+
-
-
+
TREG  
ICHG  
+
-
IBUS_LIM  
-
TJ  
+
-
VBUS  
+
PWM Charge  
VBUS UVLO  
VOREG  
VBUS UVLO  
-
VREF  
VIN  
VIN UVLO  
VBUS  
ISHORT  
+
-
VIN UVLO  
Linear Chg  
+
-
VBUS  
+
-
VBUS Poor  
Source  
VBUS OVP  
BOOT  
VREF  
VBUS MIN  
VBUS OVP  
+
-
VIN  
Ref & Bias  
VIN  
VIN Poor  
Source  
+
-
VIN OVP  
TSHUT  
VIN MIN  
VIN OVP  
PMID1  
VBAT  
BOOT1  
LED  
+
-
TJ  
+
-
PWM Charge  
PMID2  
Charge Control,  
Timer and Display  
Logic  
VSHORT  
TSHTDWN  
VBAT  
LED  
VBAT  
+
-
BAT OVP  
VBAT OVP  
VBAT  
+
-
STAT  
Recharge  
VOREG - VRCH  
VBUS  
VBAT  
+
-
Sleep VBUS  
DIS  
SLRST  
OTG  
VIN  
+
-
Sleep VIN  
VBAT  
SDA  
SCL  
Recharge  
GND  
GND  
GND  
GND  
GND  
I2C Control  
VCSIN  
Termination  
+
VBAT  
-
-
ITERM  
Figure 2. bq24140 Block Diagram  
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TYPICAL PERFORMANCE CHARACTERISTICS  
Figure 3. VBUS to VIN Charging Default Mode C1:VIN, CH2: IVBUS, CH3: IVIN, CH4: VBUS  
Figure 4. VIN Charging and removed, switch to VBUS Default Mode C1:VIN, CH2: IVBUS, CH3: IVIN,  
CH4: VBUS  
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Figure 5. VBUS Dynamic Power Management (DPM) C1:VIN, CH2: IVBUS, CH3: VBUS, CH4: STAT  
Figure 6. VBUS Dynamic Power Management (DPM) CH1:VIN, CH2: STAT, CH3: VBAT, CH4: IVIN  
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0.95  
0.93  
Efficiency 325  
Efficiency 550  
Efficiency 950  
0.91  
0.89  
0.87  
0.85  
0.83  
0.81  
0.79  
0.77  
0.75  
Efficiency 1250  
2
2.5  
3
3.5  
4
4.5  
VBAT - Battery Voltage - V  
Figure 7. VBUS Efficiency versus Battery Voltage  
0.95  
0.93  
VBAT at 4.2 V  
VBAT at 4 V  
VBAT at 3.6 V  
0.91  
0.89  
0.87  
0.85  
0.83  
0.81  
0.79  
0.77  
0.75  
VBAT at 3 V  
VBAT at 2.5 V  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
ICHG - Charge Current - A  
Figure 8. VBUS Efficiency versus Charge Current  
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0.95  
0.93  
Efficiency 325  
Efficiency 550  
Efficiency 950  
0.91  
0.89  
0.87  
0.85  
0.83  
0.81  
0.79  
0.77  
0.75  
Efficiency 1.55  
2
2.5  
3
3.5  
4
4.5  
5
VBAT - Battery Voltage - V  
Figure 9. VIN Efficiency versus Battery Voltage  
0.95  
0.93  
VBAT at 4.2 V  
VBAT at 4 V  
VBAT at 3.6 V  
0.91  
0.89  
0.87  
0.85  
0.83  
0.81  
0.79  
0.77  
0.75  
VBAT at 3 V  
VBAT at 2.5 V  
0
0.2  
0.4  
0.6  
0.8  
1
ICHG - Charge Current - A  
1.2  
1.4  
1.6  
Figure 10. VIN Efficiency versus Charge Current  
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Figure 11. Charge Current Response 550mA to 1.55A  
CH1: VIN, CH2: VBAT, CH3: IBAT, CH4: IVIN  
Figure 12. Input Current Regulation Response 100mA to No Limit  
CH1: VIN, CH2: VBAT, CH3: IBAT, CH4: IVIN  
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2 %  
1 %  
0 %  
-1 %  
VIN = 5 V, VBAT = 3.6 V  
VIN = 5 V, VBAT = 3 V  
VIN = 5 V, VBAT = 4 V  
-2 %  
-3 %  
VBUS = 5 V, VBAT = 3.6 V  
VBUS = 5 V, VBAT = 4 V  
-4 %  
-5 %  
-6 %  
VBUS = 5 V, VBAT = 3 V  
0
20  
40  
60  
80  
100  
120  
Figure 13. Typical Charge Current Accuracy  
Figure 14. VBUS OTG in PFM Mode  
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92  
91  
90  
89  
88  
87  
86  
0.1  
0.15  
0.2  
0.25  
0.3  
0.35  
0.4  
0.45  
0.5  
0.55  
Boost Output current (A)  
Figure 15. VBUS OTG Efficiency  
DETAILED FUNCTIONAL DESCRIPTION  
The bq24140 is a highly integrated dual input switch-mode battery charger with USB-OTG support. Due to the  
switch-mode architecture, it provides the capability of charging the battery faster than traditional linear chargers  
in the event that the power source is current limited, such as USB ports. In addition to the reduced charge time,  
higher efficiencies reduce the power losses through the charger and allows for better thermal management of the  
end product.  
The bq24140 integrates a dual input 3MHz synchronous switching charger that targets space limited portable  
applications powered by a single cell Li based battery pack. In addition to charge the battery, the bq24140  
provides support for simultaneously boosting the battery voltage back to the USB input for USB-OTG support.  
The bq24140 has two operation modes: default mode and host-control mode. In default mode, the charger will  
start a charge cycle with the default parameters and wait for an I2C write to the IC before entering host-mode. In  
host-control mode, the charger will switch to a 32s watchdog timer and the charge paramters will follow the  
information set on the registers.  
The bq24140 provides three ways of configuring the charger, charge mode, boost mode and high impedance  
mode. These 3 configuration allows for multiple possible settings of the charge systems, including charging the  
battery and providing power to an accessory. The high impedance mode reduces the quiescent current from the  
device, effectively reducing the power consumption when the portable device is in standby mode. Integrated  
control loops ensure smooth transitions between the different operating modes.  
PWM Buck Charger  
The IC provides an integrated, fixed 3 MHz frequency voltage-mode controller to regulate charge current or  
voltage. This type of controller is used to improve line transient response, thereby, simplifying the compensation  
network used for both continuous and discontinuous current conduction operation. The voltage and current loops  
are internally compensated using a Type-III compensation scheme that provides enough phase margin for stable  
operation, allowing the use of small ceramic capacitors with very low ESR. The device operates between 0% to  
99.5% duty cycles.  
The IC has back to back common-drain N-channel FETs at the high side and one N-channel FET at low side for  
both VIN and VBUS inputs. The input N-FETs (Q1, Q4) prevents battery discharge when VIN and/or VBUS is  
lower than VBAT. The second high-side N-FET (Q2, Q5) are the switching FETs. A charge pump circuit is used  
to provide gate drive for Q1 and Q4, while a bootstrap circuit with an external bootstrap capacitor is used to  
supply the gate drive voltage for Q2 and Q5.  
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Cycle-by-cycle current limit is sensed through FETs Q4 and Q5 for the high side current limit and through Q3 and  
Q6 for the low side current limit. The high side current limit threshold is set to a nominal 2.4-A peak current. The  
low-side current limit decides if the PWM Controller will operate in synchronous or non-synchronous mode. This  
threshold is set to 100mA and it turns off the low-side N-channel FETs (Q3 and/or Q6) before the current  
reverses, preventing the battery from discharging. Synchronous operation is used when the current of the  
low-side FET is greater than 100mA to minimize power losses.  
If the battery voltage is below the V(SHORT) threshold, the bq24140 applies the short circuit current, I(SHORT), to  
the battery. The purpose of this current is to close an open protector on the battery pack. Once the battery  
voltage rises above VSHORT, the bq24140 ramps us the charge current to the programmed ICHARGE value. If the  
programmed charge current requires an input current that is higher than the programmed IIN_LIMIT value, then the  
bq24140 will regulate the input current and the charge current will be limited by the input current loop. The slew  
rate for fast charge current is controlled to minimize the current and voltage over-shoot during transient. Both the  
input current limit, IIN_LIMIT, and fast charge current, ICHARGE, can be set by the host. Once the battery voltage  
reaches the programmed regulation voltage, VOREG, the charge current is tapered down. (See Figure 16 and  
Figure 17.  
Fastcharge Phase  
(PWM Charge)  
Precharge Phase  
(Linear Charge)  
Voltage Regulation Phase  
(PWM Charge)  
V
OREG  
I
CHARGE  
Charge Voltage  
V
SHORT  
Charge Current  
Termination  
I
SHORT  
Figure 16. Typical Charging Profile for No Input Current Limit  
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Voltage Regulation Phase  
(PWM Charge)  
Fastcharge Phase  
(PWM Charge)  
Precharge Phase  
(Linear Charge)  
V
OREG  
Charge Voltage  
V
SHORT  
Charge Current  
Termination  
I
SHORT  
Figure 17. Typical Charging Profile With Input Current Limit  
The voltage regulation feedback occurs by monitoring the battery-pack voltage between the VBAT and GND  
pins. The regulation voltage is adjustable (3.5V to 4.44V) and is programmed through I2C interface. The IC  
monitors the charging current during the voltage regulation phase. When the termination is enabled, once the  
termination threshold, ITERM, is detected and the battery voltage is above the recharge threshold, the IC  
terminates charge. The termination current level is programmable. To disable the charge current termination, the  
host can set the charge termination bit (TE) of charge control register to 0, refer to I2C section for detail.  
A new charge cycle is initiated when one of the following conditions is detected:  
The battery voltage falls below the V(OREG) V(RCH) threshold.  
VBUS or VIN Power-on reset (POR), if battery voltage is below the V(LOWV) threshold.  
CE bit toggle or RESET bit is set (Host controlled)  
Figure 18 shows an operational flow chart of the bq24140 in charge mode.  
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IC unpowered  
Attach V  
IN  
and/or VBUS  
DEFAULT mode  
CD Pin Low?  
Yes  
Hi-Z mode  
Hi-Z mode  
No  
No  
Good input  
power?  
Attach  
battery  
Yes  
No  
No  
Battery  
Inserted?  
Hi-Z mode  
Yes  
Yes  
Battery need  
charge?  
Charge Disable  
DEFAULT mode  
Charge at  
ICHRG=325mA up  
to VBAT=3.54V  
HOST mode  
controlled  
I2C  
communication  
?
charging at I  
up to V  
CHRG  
OREG  
No  
No  
Watchdog  
timer expired?  
15-min timer  
expired?  
Yes  
No  
VBAT>VRCHG ,Term  
Enabled and ITERM  
reached?  
Hi-Z mode  
Yes  
Yes  
No  
Input Power  
POR?  
Hi-Z mode  
Figure 18. Operational Flowchart  
POWER UP  
When a power source is first connected to the bq24140, the IC will go to default mode for 15 minutes. In default  
mode, the bq24140 is configured with safe charging parameters for charge current, charge voltage and input  
current. Once a write event is done to the bq24140 through I2C, the device enters host mode and the device will  
then follow the parameters as they are written by the host.  
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During initial power up in default mode, the device will look at the battery voltage. If the battery voltage is less  
than the VLOWV, the device will charge the battery with a default charge current of 325mA and a default battery  
charge voltage of 3.54V. The input current limit value depends on which power source was used. In the case the  
bq24140 is powered up from the VIN source, the input current limit is set to 500mA. If the device is powered up  
from the VBUS source, the input current limit depends on the status of the OTG pin. If the OTG pin is low, the  
input current limit is set to 100mA. If the OTG pin is high, the input current limit is set to 500mA.  
INPUT POWER SOURCE PRIORITY  
When two power supplies are detected in default mode, the bq24140 will default to VIN operation and the VBUS  
input will go to high impedance. There is a blanking time between switching from one power source to the other  
power source of 10ms (tHANDOFF). The state diagram below describes the operation (Figure 19).  
Input Power Source Switch Over State Diagram  
VBUS Charging Active  
No  
VIN > VUVLO  
?
Yes  
Bad Adaptor Detection  
for VIN  
No  
VIN Adaptor  
Good?  
Yes  
Set /CE bit (B2, Register 1,  
0x6b) high  
Delay THANDOFF  
10 ms  
Start VIN Charging  
Figure 19. Input power source selection in default mode  
In the case where the bq24140 is in host mode, power priority will be dictated by the Host by setting one input to  
high impedance and activating the other input using the HZ_MODE bit of the control register.  
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BAD ADAPTOR DETECTION  
At POR of VBUS or VIN, the IC performs the bad adaptor detection by applying a current sink of 30mA to the  
valid power pin. If the power pin is higher than VIN(MIN) for 30ms, the adaptor is good and the charge process  
begins. Otherwise, if the power pin drops below VIN(MIN), a bad adaptor is detected. Once a bad adaptor is  
detected, the IC disables the current sink, sends a send fault pulse in FAULT pin and sets the bad adaptor flag  
(B2-B0=011 for Register 0x00). After a delay of TINT, the IC repeats the adaptor detection process, as shown in  
the flowchart below:  
VIN or VBUS POR  
Delay 1ms  
Enable Adaptor Detection  
Start 30ms timer  
Enable 30mA current source  
No  
VIN or VBUS  
>
30ms Timer  
expired?  
Yes  
VIN MIN  
?
No  
Good Adaptor Detected  
Disable Adaptor Detection  
Start Charge  
Bad Adaptor Detected  
Pulse STAT pin  
Set Bad Adaptor Flag  
Enable VIN DPM  
Delay TINT  
2s  
Figure 20. Bad Adaptor Detection  
BATTERY DETECTION  
Battery detection during charging  
During normal charging process with host control, once the voltage at the VBAT pin is above the battery  
recharge threshold, VOREGVRCH, and the termination charge current is detected, the IC turns off the PWM  
charge and enables a discharge current, IDETECT, for a period of tDETECT, then checks the battery voltage. If the  
battery voltage is still above recharge threshold, the IC concludes that the battery is present and charge is  
completed. On the other hand, if the battery voltage is below battery recharge threshold, the IC concludes that  
the battery was removed. Under this condition, the charge parameters (such as input current limit) are reset to  
the default values and charge resumes after a delay of tINT. This function ensures that the charge parameters are  
reset whenever the battery is replaced.  
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Battery detection during power-up  
The bq24140 also has a unique battery detection scheme during the start up of the charger. At power up, if the  
timer is in 15-minute mode, bq24140 will start a 262ms timer when exiting from short circuit mode to PWM  
charge mode. If the battery voltage is charged to recharge threshold (VOREGVRCH) and the 262ms timer has not  
expired yet, or battery voltage is above output OVP threshold during short-circuit mode, bq24140 will consider  
the battery is not present; then stop charging and go to high impedance mode immediately. However, if the  
262ms timer has expired before the recharge threshold is reached, the charging process will continue as normal.  
HIGH-SIDE LED DRIVER  
The LED pin is a high-side LED driver. This LED function needs to run from the battery and the expected output  
current can be programmed through I2C. There are 2 bits for programming the output current from the LED pin.  
In addition, there is extra programmability for the LED function. Since there is only one LED driver used by both  
the VIN and VBUS charger cores, there is only one LED register that can be accessed through the addresses  
6AH and 6BH. When one of the two addresses is written, the settings for both cores will be set. Refer to the  
Register Description Section for details on the LED programmable timings and current options.  
BOOST CONVERTER OPERATION  
The bq24140 support USB-OTG for the VBUS pin when OTG mode is enabled. In this configuration, the battery  
voltage is boosted to 5.05V (±3%). The maximum output current for the boost converted is increased to 650mA  
minimum current.  
Boost Start Up  
To prevent the inductor saturation and limit the inrush current, a soft-start control is applied during the boost start  
up.  
PFM Mode at Light Load  
In boost mode, the IC operates in pulse skipping mode (PFM mode) to reduce the power loss and improve the  
converter efficiency at light load condition. During boosting, the PWM converter is turned off if the inductor  
current falls below than 200mA. The PWM is turned back on only when the voltage at PMID pin drops to 99.5%  
of the typical rated output voltage. A unique pre-set circuit is used to make the smooth transition between PWM  
and PFM mode.  
Safety Timer in Boost Mode  
At the beginning of boost operation, the IC starts a 32-second timer that is reset by the host using the I2C  
interface. Writing 1to reset bit of TMR_RST in control register will reset the 32-second timer and TMR_RST is  
automatically set to 0after the 32-second timer is reset. Once the 32-second timer expires, the IC turns off the  
boost converter, enunciates the fault pulse from the STAT pin and sets fault status bits in the status register. The  
fault condition is cleared by POR or host control.  
Charge Status Output, STAT Pin  
The STAT pin is used to indicate operation conditions for bq24140. STAT is pulled low during charging when  
EN_STAT bit in control register (00H) is set to 1. Under other conditions, STAT pin behaves as a high  
impedance (open-drain) output. Under fault conditions, a 128-μs pulse will be sent out to notify the host. The  
status of STAT pin at different operation conditions is summarized in Table 1. The STAT pin can be used to drive  
an LED or communicate to the host processor.  
Table 1. STAT Pin Summary  
CHARGE STATE  
Charge in progress and EN_STAT = 1  
STAT  
Low  
Other normal conditions  
Open-Drain  
Charge mode faults and input not in HiZ  
128 µs pulse, then open-drain  
128 µs pulse, then open-drain  
128 µs pulse, then normal per above cases  
128 µs pulse, then normal per above cases  
Boost mode faults and input not in HiZ  
VIN Present bit change (HL or LH) regardless of HiZ status  
VBUS Present bit change (HL or LH) regardless of HiZ status  
22  
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Safety Limit Registers  
The bq24140 includes safety limit registers which are used as an extra level of security for devices that allow  
applications to be developed by third party vendors (i.e. Android OS). The purpose of the safety limit registers is  
to program the maximum allowable battery regulation voltage and charge current. These two registers need to be  
written before any other write actions are sent to the bq24140. Once a write action to a register other than the  
safety limit registers, the values on the safety limit registers will be locked.  
SLRST Pin  
When SLRST=0, the bq24140 will reset all the safety limits to default values, regardless of the write actions to  
safety limits registers (06H). When SLRST=1, the bq24140 can program the safety limit register until any write  
action to other registers locks the programmed safety limits.  
VREG LDO  
The bq24140 includes a 2.6V LDO that can be used as an indication of the VIN input being connected. This LDO  
is active all the time when there is a power source connected to the VIN input. The current limit on the LDO  
guarantees up to 10mA.  
SERIAL INTERFACE DESCRIPTION  
I2C is a 2-wire serial interface developed by Philips Semiconductor (see I2C-Bus Specification, Version 2.1,  
January 2000). The bus consists of a data line (SDA) and a clock line (SCL) with pull-up structures. When the  
bus is idle, both SDA and SCL lines are pulled high. All the I2C compatible devices connect to the I2C bus  
through open drain I/O pins, SDA and SCL. A master device, usually a microcontroller or a digital signal  
processor, controls the bus. The master is responsible for generating the SCL signal and device addresses. The  
master also generates specific conditions that indicate the START and STOP of data transfer. A slave device  
receives and/or transmits data on the bus under control of the master device.  
The IC works as a slave and is compatible with the following data transfer modes, as defined in the I2C-Bus  
Specification: standard mode (100 kbps), fast mode (400 kbps), and high-speed mode (up to 3.4 Mbps in write  
mode). The interface adds flexibility to the battery charge solution, enabling most functions to be programmed to  
new values depending on the instantaneous application requirements. Register contents remain intact as long as  
supply voltage remains above 2.2 V (typical). I2C is asynchronous, which means that it runs off of SCL. The  
device has no noise or glitch filtering on SCL, so SCL input needs to be clean. Therefore, it is recommended that  
SDA changes while SCL is LOW.  
The data transfer protocol for standard and fast modes is exactly the same, therefore, they are referred to as  
F/S-mode in this document. The protocol for high-speed mode is different from the F/S-mode, and it is referred to  
as HS-mode. The IC supports 7-bit addressing only. The device has two 7-bit addresses, defined as  
1101011(6BH) for USB portion and, and 1101010(6AH) for AC portion.  
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REGISTER DESCRIPTION  
For I2C address 6BH (USB Charger)  
Status/Control Register (READ/WRITE)  
Memory location: 00, Reset state: x1xx 0xxx  
BIT  
NAME  
Read/Write  
FUNCTION  
B7(MSB) TMR_RST/OTG  
Read/Write  
Write: TMR_RST function, write 1to reset the safety timer (auto clear)  
Read: OTG pin status, 0-OTG pin at Low level, 1-OTG pin at High level;  
B6  
B5  
EN_STAT  
STAT2  
Read/Write  
Read only  
Read only  
Read only  
Read only  
Read only  
Read only  
0-Disable STAT pin function, 1-Enable STAT pin function (default 1)  
00-Ready, 01-Charge in progress, 10-Charge done, 11-Fault  
B4  
STAT1  
B3  
BOOST  
Boost mode, 0Not in boost mode.  
B2  
FAULT_3  
FAULT_2  
FAULT_1  
Charge mode: 000-Normal, 001-VBUS OVP, 010-Sleep mode, 011-Bad Adaptor or  
VBUS<VUVLO, 100-Output OVP, 101-Thermal shutdown, 110-Timer fault, 111-No battery  
B1  
B0(LSB)  
Boost mode: 000-Normal, 001-VBUS OVP, 010-Over load, 011-Battery voltage is too low,  
100-Battery OVP, 101-Thermal shutdown, 110-Timer fault, 111-NA  
Control Register (READ/WRITE)  
Memory location: 01, Reset state: 0011 0000  
BIT  
NAME  
Read/Write  
FUNCTION  
B7(MSB) Iin_Limit_2  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
00-USB host with 100-mA current limit, 01-USB host with 500-mA current limit, 10-USB  
host/charger with 800-mA current limit, 11-No input current limit (default 00)  
B6  
B5  
Iin_Limit_1  
VLOWV_2(1)  
VLOWV_1(1)  
TE  
200 mV weak battery voltage threshold (default 1)  
B4  
100 mV weak battery voltage threshold (default 1)  
B3  
1-Enable charge current termination, 0-Disable charge current termination (default 0)  
1-Charger is disabled, 0-Charger enabled (default 0)  
1-High impedance mode, 0-Not high impedance mode (default 0)  
1-Boost mode, 0-Charger mode (default 0)  
B2  
CE  
B1  
HZ_MODE  
OPA_MODE  
B0(LSB)  
(1) The range of weak battery voltage threshold (VLOWV) is 3.4V3.7V with the offset of 3.4V and step of 100mV (default 3.7V).  
Control/Battery Voltage Register (READ/WRITE)  
Memory location: 02, Reset state: 0000 1010  
BIT  
B7(MSB)  
B6  
NAME  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
FUNCTION  
VOREG5  
VOREG4  
VOREG3  
VOREG2  
VOREG1  
VOREG0  
OTG_PL  
OTG_EN  
Battery Regulation Voltage: 640 mV (default 0)  
Battery Regulation Voltage: 320 mV (default 0)  
Battery Regulation Voltage: 160 mV (default 0)  
Battery Regulation Voltage: 80 mV (default 0)  
Battery Regulation Voltage: 40 mV (default 1)  
Battery Regulation Voltage: 20 mV (default 0)  
Active at High level, 0-Active at Low level (default 1)  
Enable OTG Pin, 0-Disable OTG pin (default 0)  
B5  
B4  
B3  
B2  
B1  
B0(LSB)  
Charge voltage range is 3.5V4.44V with the offset of 3.5V and step of 20mV (default 3.54V).  
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Vender/Part/Revision Register (READ only)  
Memory location: 03, Reset state: 0101 0000  
BIT  
B7(MSB)  
B6  
NAME  
Read/Write  
FUNCTION  
Vender2  
Vender1  
Vender0  
PN1  
Read only  
Read only  
Read only  
Read only  
Read only  
Read only  
Read only  
Read only  
Vender Code: bit 2 (default 0)  
Vender Code: bit 1 (default 1)  
Vender Code: bit 0 (default 0)  
10  
B5  
B4  
B3  
PN0  
B2  
Revision2  
Revision1  
Revision0  
000: Revision 1.0  
B1  
B0(LSB)  
Battery Termination/Fast Charge Current Register (READ/WRITE)  
Memory location: 04, Reset state: 0000 0001  
BIT  
NAME  
Read/Write  
FUNCTION  
B7(MSB)  
Reset  
Write only  
Write: 1-Charger in reset mode, 0-No effect  
Read: always get 0”  
B6  
B5  
VICHRG3  
VICHRG2  
VICHRG1  
VICHRG0  
VITERM2  
VITERM1  
VITERM0  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Charge current sense voltage: 27.2mV  
Charge current sense voltage: 13.6mV  
B4  
Charge current sense voltage: 6.8mV  
B3  
Charge current sense voltage: NA  
B2  
Termination current sense voltage: 13.6mV (default 0)  
Termination current sense voltage: 6.8mV (default 0)  
Termination current sense voltage: 3.4mV (default 1)  
B1  
B0(LSB)  
Charge current sense voltage offset is 37.4mV and default charge current is 550mA, if 68-mΩ sensing  
resistor is used and LOW_CHG=0.  
The maximum charge current is 1.25A (Rsns=68mΩ) when charging from VBUS. If a higher value is  
programmed, the 1.25A or maximum safety limit charge current is selected  
Special Charger Voltage/Enable Pin Status Register  
Memory location: 05, Reset state: 001X X100  
BIT  
B7(MSB)  
B6  
NAME  
Read/Write  
FUNCTION  
NA  
Read/Write  
NA  
VBUS_PRESENT Read Only  
0VBUS not connected, 1VBUS present  
B5  
LOW_CHG  
Read/Write  
0Normal charge current sense voltage at 04H,  
1Low charge current sense voltage of 22.1mV (default 1)  
B4  
B3  
DPM_STATUS  
VIN_PRESENT  
VSREG2  
Read Only  
Read Only  
Read/Write  
Read/Write  
Read/Write  
0DPM mode is not active, 1DPM mode is active  
0VIN not connected, 1Vin present  
B2  
Special charger voltage: 320 mV (default 1)  
Special charger voltage: 160 mV (default 0)  
Special charger voltage: 80 mV (default 0)  
B1  
VSREG1  
B0(LSB)  
VSREG0  
Special charger voltage offset is 4.2V and default special charger voltage is 4.52V.  
Default charge current will be 325mA, if 68-mΩ sensing resistor is used, since default LOW_CHG=1.  
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Safety Limit Register (READ/WRITE, Write only once after reset!)  
Memory location: 06, Reset state: 01000000  
BIT  
B7(MSB)  
B6  
NAME  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
FUNCTION  
VMCHRG3  
VMCHRG2  
VMCHRG1  
VMCHRG0  
VMREG3  
VMREG2  
VMREG1  
VMREG0  
Maximum charge current sense voltage: 54.4 mV (default 0)  
Maximum charge current sense voltage: 27.2 mV (default 1)  
Maximum charge current sense voltage: 13.6 mV (default 0)  
Maximum charge current sense voltage: 6.8 mV (default 0)  
Maximum battery regulation voltage: 160 mV (default 0)  
Maximum battery regulation voltage: 80 mV (default 0)  
Maximum battery regulation voltage: 40 mV (default 0)  
Maximum battery regulation voltage: 20 mV (default 0)  
B5  
B4  
B3  
B2  
B1  
B0(LSB)  
Maximum charge current sense voltage offset is 550mA (default at 950mA) and the maximum charge current  
option is 1.55A, if 68-mΩ sensing resistor is used.  
Maximum battery regulation voltage offset is 4.2V (default at 4.2V) and maximum battery regulation voltage  
option is 4.44V.  
LED Configuration Register  
Memory location: 07, Reset state: 10000010  
BIT  
B7(MSB)  
B6  
NAME  
ILED1  
ILED0  
Read/Write  
Read/Write  
Read/Write  
FUNCTION  
00 LED Off  
01 LED current 1.25mA  
10 LED current 2.5mA (default)  
11 LED current 5mA  
B5  
B4  
NA  
Read Only  
Read/Write  
Returns 0  
LED_CTRL  
0 LED On when charging is Active (default)  
1 LED On regardless of charging status  
B3  
B2  
t_LEDON1  
t_LEDON0  
Read/Write  
Read/Write  
00 LED On time 130ms (default)  
01 LED On time 260ms  
10 LED On time 520ms  
11 LED Constant On  
B1  
t_LEDOFF1  
t_LEDOFF0  
Read/Write  
Read/Write  
00 LED Off time 390ms  
01 LED Off time 780ms  
10 LED Off time 1560ms (default)  
11 LED Off time 3120ms  
B0(LSB)  
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For I2C address 6AH (AC Charger)  
Status/Control Register (READ/WRITE)  
Memory location: 00, Reset state: x1xx 0xxx  
BIT  
NAME  
Read/Write  
FUNCTION  
B7(MSB)  
TMR_RST/OTG Read/Write  
Write: TMR_RST function, write 1to reset the safety timer (auto clear)  
Read: SLRST pin status, 0-SLRST pin at LOW level, 1-SLRST pin at HIGH level.  
B6  
B5  
EN_STAT  
STAT2  
Read/Write  
Read only  
Read only  
Read only  
Read only  
Read only  
Read only  
0-Disable STAT pin function, 1-Enable STAT pin function (default 1)  
00-Ready, 01-Charge in progress, 10-Charge done, 11-Fault  
B4  
STAT1  
B3  
NA  
NA  
B2  
FAULT_3  
FAULT_2  
FAULT_1  
Charge mode: 000-Normal, 001-VBUS OVP, 010-Sleep mode, 011-Bad Adaptor or  
VBUS<VUVLO, 100-Output OVP, 101-Thermal shutdown, 110-Timer fault, 111-No  
battery  
B1  
B0(LSB)  
Control Register (READ/WRITE)  
Memory location: 01, Reset state: 0111 0000  
BIT  
NAME  
Read/Write  
FUNCTION  
B7(MSB)  
Iin_Limit_2  
Read/Write  
00-USB host with 100-mA current limit, 01-USB host with 500-mA current limit, 10-USB  
host/charger with 800-mA current limit, 11-No input current limit (default 01)  
B6  
Iin_Limit_1  
VLOWV_2(1)  
VLOWV_1(1)  
TE  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
B5  
200mV weak battery voltage threshold (default 1)  
100mV weak battery voltage threshold (default 1)  
1-Enable charge current termination, 0-Disable charge current termination (default 0)  
1-Charger is disabled, 0-Charger enabled (default 0)  
1-High impedance mode, 0-Not high impedance mode (default 0)  
NA  
B4  
B3  
B2  
/CE  
B1  
HZ_MODE  
NA  
B0(LSB)  
(1) The range of weak battery voltage threshold (VLOWV) is 3.4V3.7V with the offset of 3.4V and step of 100mV (default 3.7V).  
Control/Battery Voltage Register (READ/WRITE)  
Memory location: 02, Reset state: 0000 1010  
BIT  
B7(MSB)  
B6  
NAME  
VOREG5  
VOREG4  
VOREG3  
VOREG2  
VOREG1  
VOREG0  
NA  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
FUNCTION  
Battery Regulation Voltage: 640 mV (default 0)  
Battery Regulation Voltage: 320 mV (default 0)  
Battery Regulation Voltage: 160 mV (default 0)  
Battery Regulation Voltage: 80 mV (default 0)  
Battery Regulation Voltage: 40 mV (default 1)  
Battery Regulation Voltage: 20 mV (default 0)  
NA  
B5  
B4  
B3  
B2  
B1  
B0(LSB)  
NA  
NA  
Charge voltage range is 3.5V4.44V with the offset of 3.5V and step of 20mV (default 3.54V).  
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Vender/Part/Revision Register (READ only)  
Memory location: 03, Reset state: 0100 0000  
BIT  
B7(MSB)  
B6  
NAME  
Read/Write  
FUNCTION  
Vender2  
Vender1  
Vender0  
PN1  
Read only  
Read only  
Read only  
Read only  
Read only  
Read only  
Read only  
Read only  
Vender Code: bit 2 (default 0)  
Vender Code: bit 1 (default 1)  
Vender Code: bit 0 (default 0)  
00  
B5  
B4  
B3  
PN0  
B2  
Revision2  
Revision1  
Revision0  
000: Revision 1.0  
B1  
B0(LSB)  
Battery Termination/Fast Charge Current Register (READ/WRITE)  
Memory location: 04, Reset state: 0000 0001  
BIT  
NAME  
Reset  
Read/Write  
Write only  
FUNCTION  
B7(MSB)  
Write: 1-Charger in reset mode, 0-No effect  
Read: always get 0”  
B6  
VICHRG3  
VICHRG2  
VICHRG1  
VICHRG0  
VITERM2  
VITERM1  
VITERM0  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Charge current sense voltage: 54.4 mV (default 0)  
Charge current sense voltage: 27.2 mV (default 0)  
Charge current sense voltage: 13.6 mV (default 0)  
Charge current sense voltage: 6.8 mV (default 0)  
Termination current sense voltage: 13.6 mV (default 0)  
Termination current sense voltage: 6.8 mV (default 0)  
Termination current sense voltage: 3.4 mV (default 1)  
B5  
B4  
B3  
B2  
B1  
B0(LSB)  
Charge current sense voltage offset is 37.4mV and default charge current is 550mA, if 68-mΩ sensing  
resistor is used and LOW_CHG=0.  
The maximum charge current is 1.55A when charging from VIN. If a higher value is programmed, the 1.55A  
or maximum safety limit charge current is selected.  
Special Charger Voltage/Enable Pin Status Register  
Memory location: 05, Reset state: 001X X100  
BIT  
B7(MSB)  
B6  
NAME  
Read/Write  
FUNCTION  
NA  
Read/Write  
NA  
VIN_PRESEN Read Only  
T
0VIN not connected, 1Vin present  
B5  
LOW_CHG  
Read/Write  
0Normal charge current sense voltage at 04H, 1Low charge current sense voltage  
of 22.1mV (default 1)  
B4  
B3  
DPM_STATUS Read Only  
0DPM mode is not active, 1DPM mode is active  
0CD pin at LOW level, 1CD pin at HIGH level  
Special charger voltage: 320mV (default 1)  
Special charger voltage: 160mV (default 0)  
Special charger voltage: 80mV (default 0)  
CD_STATUS  
VSREG2  
Read Only  
Read/Write  
Read/Write  
Read/Write  
B2  
B1  
VSREG1  
B0(LSB)  
VSREG0  
Special charger voltage offset is 4.2V and default special charger voltage is 4.52V.  
Default charge current will be 325mA, if 68-mΩ sensing resistor is used, since default LOW_CHG=1.  
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Safety Limit Register (READ/WRITE, Write only once after reset!)  
Memory location: 06, Reset state: 01000000  
BIT  
B7(MSB)  
B6  
NAME  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
FUNCTION  
VMCHRG3  
VMCHRG2  
VMCHRG1  
VMCHRG0  
VMREG3  
VMREG2  
VMREG1  
VMREG0  
Maximum charge current sense voltage: 54.4 mV (default 0)  
Maximum charge current sense voltage: 27.2 mV (default 1)  
Maximum charge current sense voltage: 13.6 mV (default 0)  
Maximum charge current sense voltage: 6.8 mV (default 0)  
Maximum battery regulation voltage: 160 mV (default 0)  
Maximum battery regulation voltage: 80 mV (default 0)  
Maximum battery regulation voltage: 40 mV (default 0)  
Maximum battery regulation voltage: 20 mV (default 0)  
B5  
B4  
B3  
B2  
B1  
B0(LSB)  
Maximum charge current sense voltage offset is 550mA (default at 950mA) and the maximum charge current  
option is 1.55A, if 68-mΩ sensing resistor is used.  
Maximum battery regulation voltage offset is 4.2V (default at 4.2V) and maximum battery regulation voltage  
option is 4.44V.  
Memory location 06 resets only when VBAT voltage drops below VSHORT threshold (typ.2.05V) or SLRST (pin  
C3) goes to logic 0. After reset, the maximum values for battery regulation voltage and charge current can  
be programmed many times until any writing to other register locks the safety limits. Programmed values  
exclude higher values from memory locations 02 (battery regulation voltage), and from memory location 04  
(Fast charge current).  
If host accesses (write command) to some other register before safety limit register, the default values hold!  
LED Configuration Register  
Memory location: 07, Reset state: 10000010  
BIT  
B7(MSB)  
B6  
NAME  
ILED1  
ILED0  
Read/Write  
Read/Write  
Read/Write  
FUNCTION  
00 LED Off  
01 LED current 1.25 mA  
10 LED current 2.5 mA (default)  
11 LED current mA  
B5  
B4  
NA  
Read Only  
Read/Write  
Returns 0  
LED_CTRL  
0 LED On when charging is Active (default)  
1 LED On regardless of charging status  
B3  
B2  
t_LEDON  
1
0
Read/Write  
Read/Write  
00 LED On time 13 ms (default)  
01 LED On time 260 ms  
10 LED On time 520 ms  
11 LED Constant On  
t_LEDON  
B1  
t_LEDOFF  
t_LEDOFF  
1
0
Read/Write  
Read/Write  
00 LED Off time 390 ms  
01 LED Off time 780 ms  
10 LED Off time 1560 ms (default)  
11 LED Off time 3120 ms  
B0(LSB)  
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APPLICATION SECTION  
Charge Current Sensing Resistor Selection Guidelines  
Both the termination current range and charge current range depend on the sensing resistor (RSNS). The  
termination current step (IOTERM_STEP) can be calculated using Equation 1:  
V
I(TERM0)  
I
=
O(TERM_STEP)  
R
(SNS)  
(1)  
Table 2 shows the termination current settings for three sensing resistors.  
Table 2. Termination Current Settings for 55-m, 68-m, 100-mSense Resistors  
I(TERM) (mA)  
R(SNS) = 55mΩ  
I(TERM) (mA)  
R(SNS) = 68mΩ  
I(TERM) (mA)  
R(SNS) = 100mΩ  
BIT  
VI(TERM) (mV)  
VI(TERM2)  
VI(TERM1)  
VI(TERM0)  
Offset  
13.6  
6.8  
3.4  
3.4  
247  
124  
62  
200  
100  
50  
136  
68  
34  
62  
50  
34  
The charge current step (IO(CHARGE_STEP)) is calculated using Equation 2:  
V
I(CHRG0)  
I
=
O(CHARGE_STEP)  
R
(SNS)  
(2)  
Table 3 shows the charge current settings for three sensing resistors.  
Table 3. Charge Current Settings for 55-m, 68-mand 100-mSense Resistors  
IO(CHARGE) (mA)  
R(SNS) = 55mΩ  
IO(CHARGE) (mA)  
R(SNS) = 68mΩ  
IO(CHARGE) (mA)  
R(SNS) = 100mΩ  
BIT  
VI(REG) (mV)  
VI(CHRG3)  
VI(CHRG2)  
VI(CHRG1)  
VI(CHRG0)  
Offset  
54.4  
27.2  
13.6  
6.8  
989  
495  
247  
124  
680  
800  
400  
200  
100  
550  
544  
272  
136  
68  
37.4  
374  
Output Inductor and Capacitance Selection Guidelines  
The IC provides internal loop compensation. With the internal loop compensation, the highest stability occurs  
when the LC resonant frequency, fo, is approximately 40 kHz (20 kHz to 80 kHz). Equation 3 can be used to  
calculate the value of the output inductor, LOUT, and output capacitor, COUT  
.
1
f
=
o
2p ´  
L
´ C  
OUT  
OUT  
(3)  
To reduce the output voltage ripple, a ceramic capacitor with the capacitance between 4.7 μF and 47 μF is  
recommended for COUT, see the application section for components selection.  
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POWER TOPOLOGIES  
System Load After Sensing Resistor  
One of the simpler high-efficiency topologies connects the system load directly across the battery pack, as  
shown in Figure 21. The input voltage has been converted to a usable system voltage with good efficiency from  
the input. When the input power is on, it supplies the system load and charges the battery pack at the same time.  
When the input power is off, the battery pack powers the system directly.  
SW  
VBUS  
Isns  
Isys  
Ichg  
L1  
Rsns  
VIN  
+
-
bq2414x  
System  
Load  
+
C3  
C4  
BAT  
C1  
PMID  
C2  
PGND  
Figure 21. System Load After Sensing Resistor  
The advantages:  
1. When the AC adapter is disconnected, the battery pack powers the system load with minimum power  
dissipation. Consequently, the time that the system runs on the battery pack can be maximized.  
2. It reduces the number of external path selection components and offers a low-cost solution.  
3. Dynamic power management (DPM) can be achieved. The total of the charge current and the system current  
can be limited to a desired value by setting the charge current value. When the system current increases, the  
charge current drops by the same amount. As a result, no potential over-current or over-heating issues are  
caused by excessive system load demand.  
4. The total input current can be limited to a desired value by setting the input current limit value. USB  
specifications can be met easily.  
5. The supply voltage variation range for the system can be minimized.  
6. The input current soft-start can be achieved by the generic soft-start feature of the IC.  
Design considerations and potential issues:  
1. If the system always demands a high current (but lower than the regulation current), the battery charging  
never terminates. Thus, the battery is always charged, and its lifetime may be reduced.  
2. Because the total current regulation threshold is fixed and the system always demands some current, the  
battery may not be charged with a full-charge rate and thus may lead to a longer charge time.  
3. If the system load current is large after the charger has been terminated, the IR drop across the battery  
impedance may cause the battery voltage to drop below the refresh threshold and start a new charge cycle.  
The charger would then terminate due to low charge current. Therefore, the charger would cycle between  
charging and terminating. If the load is smaller, the battery has to discharge down to the refresh threshold,  
resulting in a much slower cycling.  
4. In a charger system, the charge current is typically limited to about 30mA, if the sensed battery voltage is  
below 2V short circuit protection threshold. This results in low power availability at the system bus. If an  
external supply is connected and the battery is deeply discharged, below the short circuit protection  
threshold, the charge current is clamped to the short circuit current limit. This then is the current available to  
the system during the power-up phase. Most systems cannot function with such limited supply current, and  
the battery supplements the additional power required by the system. Note that the battery pack is already at  
the depleted condition, and it discharges further until the battery protector opens, resulting in a system  
shutdown.  
5. If the battery is below the short circuit threshold and the system requires a bias current budget lower than the  
short circuit current limit, the end-equipment will be operational, but the charging process can be affected  
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depending on the current left to charge the battery pack. Under extreme conditions, the system current is  
close to the short circuit current levels and the battery may not reach the fast-charge region in a timely  
manner. As a result, the safety timers flag the battery pack as defective, terminating the charging process.  
Because the safety timer cannot be disabled, the inserted battery pack must not be depleted to make the  
application possible.  
6. If the battery pack voltage is too low, highly depleted, totally dead or even shorted, the system voltage is  
clamped by the battery and it cannot operate even if the input power is on.  
System Load Before Sensing Resistor  
The second circuit is similar to first one; the difference is that the system load is connected before the sense  
resistor, as shown in Figure 22.  
Isys  
SW  
VBUS  
Isns  
L1  
Rsns  
Ichg  
VIN  
+
bq2414x  
System  
Load  
+
-
C3  
C4  
BAT  
C1  
PMID  
C2  
PGND  
Figure 22. System Load Before Sensing Resistor  
The advantages of system load before sensing resistor to system load after sensing resistor:  
1. The charger controller is based only on the current going through the current-sense resistor. So, the constant  
current fast charge and termination functions operate without being affected by the system load. This is the  
major advantage of having the system load connected before the sense resistor.  
2. A depleted battery pack can be connected to the charger without the risk of the safety timer expiration  
caused by high system load.  
3. The charger can disable termination and keep the converter running to keep battery fully charged; or let the  
switcher terminate when the battery is full and then allow the system to run off of the battery through the  
sense resistor.  
Design considerations and potential issues:  
1. The total current is limited by the IC input current limit, or peak current protection, but not the charge current  
setting. The charge current does not drop when the system current load increases until the input current limit  
is reached. This solution is not recommended if the system requires a high current.  
2. Efficiency declines when discharging through the sense resistor to the system.  
3. No thermal regulation. Therefore, the system design should ensure the maximum junction temperature of the  
IC is below 125°C during normal operation.  
32  
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SLUSAO5 OCTOBER 2011  
DESIGN EXAMPLE FOR TYPICAL APPLICATION CIRCUIT  
Systems Design Specifications:  
VBUS = 5 V  
VBAT = 4.2 V (1-Cell)  
I(charge) = 1.25 A  
Inductor ripple current = 30% of fast charge current  
1. Determine the inductor value (LOUT) for the specified charge current ripple:  
VBAT ´ (VBUS - VBAT)  
L
=
OUT  
VBUS ´ f ´ DI  
L
, the worst case is when battery voltage is as close as to half of the input  
voltage.  
2.5 ´ (5 - 2.5)  
L
=
OUT  
6
5 ´ (3 ´ 10 ) ´ 1.25 ´ 0.3  
(4)  
LOUT = 1.11 μH  
Select the output inductor to standard 1 μH. Calculate the total ripple current with using the 1-μH inductor:  
VBAT ´ (VBUS - VBAT)  
DI =  
L
VBUS ´ f ´ L  
OUT  
(5)  
(6)  
2.5 ´ (5 - 2.5)  
DI =  
L
6
-6  
5 ´ (3 ´ 10 ) ´ (1 ´ 10  
)
ΔIL = 0.42 A  
Calculate the maximum output current:  
DI  
L
I
= I +  
OUT  
LPK  
2
0.42  
2
(7)  
(8)  
I
= 1.25 +  
LPK  
ILPK = 1.46 A  
Select 2.5mm by 2mm 1-μH 1.5-A surface mount multi-layer inductor. The suggested inductor part numbers  
are shown as following.  
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Table 4. Inductor Part Numbers  
PART NUMBER  
LQM2HPN1R0MJ0  
MIPS2520D1R0  
MDT2520-CN1R0M  
CP1008  
INDUCTANCE  
SIZE  
MANUFACTURER  
1 μH  
1 μH  
1 μH  
1 μH  
2.5 x 2.0 mm  
2.5 x 2.0 mm  
2.5 x 2.0 mm  
2.5 x 2.0 mm  
Murata  
FDK  
TOKO  
Inter-Technical  
2. Determine the output capacitor value (COUT) using 40 kHz as the resonant frequency:  
1
f
=
o
2p ´  
L
´ C  
OUT  
OUT  
(9)  
(10)  
(11)  
1
C
=
OUT  
2
4p2 ´ f  
´ L  
0
OUT  
1
C
=
OUT  
2
3 2  
-6  
4p ´ (40 ´ 10 ) ´ (1 ´ 10 )  
COUT = 15.8 μF  
Select two 0603 X5R 6.3V 10-μF ceramic capacitors in parallel i.e., Murata GRM188R60J106M.  
3. Determine the sense resistor using the following equation:  
V
(RSNS)  
R
=
(SNS)  
I
(CHARGE)  
(12)  
The maximum sense voltage across the sense resistor is 85 mV. In order to get a better current regulation  
accuracy, V(RSNS) should equal 85mV, and calculate the value for the sense resistor.  
85mV  
R
=
(SNS)  
1.25A  
(13)  
R(SNS) = 68 mΩ  
This is a standard value. If it is not a standard value, then choose the next close value and calculate the real  
charge current. Calculate the power dissipation on the sense resistor:  
P(RSNS) = I(CHARGE) 2 × R(SNS)  
P(RSNS) = 1.252 × 0.068  
P(RSNS) = 0.106 W  
Select 0402 0.125-W 68-m2% sense resistor, i.e. Panasonic ERJ2BWGR068.  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
27-Oct-2011  
PACKAGING INFORMATION  
Status (1)  
Eco Plan (2)  
MSL Peak Temp (3)  
Samples  
Orderable Device  
Package Type Package  
Drawing  
Pins  
Package Qty  
Lead/  
Ball Finish  
(Requires Login)  
BQ24140YFFR  
BQ24140YFFT  
ACTIVE  
ACTIVE  
DSBGA  
DSBGA  
YFF  
YFF  
30  
30  
3000  
250  
Green (RoHS  
& no Sb/Br)  
SNAGCU Level-1-260C-UNLIM  
Green (RoHS  
& no Sb/Br)  
SNAGCU Level-1-260C-UNLIM  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
26-Apr-2012  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
BQ24140YFFR  
BQ24140YFFT  
DSBGA  
DSBGA  
YFF  
YFF  
30  
30  
3000  
250  
180.0  
180.0  
8.4  
8.4  
2.4  
2.4  
2.7  
2.7  
0.69  
0.69  
4.0  
4.0  
8.0  
8.0  
Q1  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
26-Apr-2012  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
BQ24140YFFR  
BQ24140YFFT  
DSBGA  
DSBGA  
YFF  
YFF  
30  
30  
3000  
250  
210.0  
210.0  
185.0  
185.0  
35.0  
35.0  
Pack Materials-Page 2  
X: Max = 2.645 mm, Min =2.545 mm  
Y: Max = 2.345 mm, Min =2.245 mm  
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