BQ24304DSGTG4 [TI]

OVERVOLTAGE AND OVERCURRENT PROTECTION IC AND Li+ CHARGER FRONT-END PROTECTION IC; 过压和过流保护IC和锂离子充电器前端保护IC
BQ24304DSGTG4
型号: BQ24304DSGTG4
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

OVERVOLTAGE AND OVERCURRENT PROTECTION IC AND Li+ CHARGER FRONT-END PROTECTION IC
过压和过流保护IC和锂离子充电器前端保护IC

电源电路 电源管理电路 光电二极管 过电流保护
文件: 总23页 (文件大小:873K)
中文:  中文翻译
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bq24300  
bq24304  
bq24305  
www.ti.com ........................................................................................................................................................ SLUS764BAUGUST 2007REVISED JUNE 2008  
OVERVOLTAGE AND OVERCURRENT PROTECTION IC AND  
Li+ CHARGER FRONT-END PROTECTION IC  
1
FEATURES  
Thermal Shutdown  
2
Provides Protection for Three Variables:  
Enable Function  
Input Overvoltage  
Small 2 mm × 2 mm 8-Pin SON Package  
LDO Mode Voltage Regulation Options:  
Input Overcurrent with Current Limiting  
Battery Overvoltage  
5.5V on bq24300  
4.5V on bq24304  
5.0V on bq24305  
30V Maximum Input Voltage  
Optional Input Reverse Polarity Protection  
High Immunity Against False Triggering Due to  
Voltage Spikes  
APPLICATIONS  
Bluetooth Headsets  
Low-Power Handheld Devices  
Robust Against False Triggering Due to  
Current Transients  
DESCRIPTION  
The bq24300 and bq24304 are highly integrated circuits designed to provide protection to Li-ion batteries from  
failures of the charging circuit. The IC continuously monitors the input voltage, the input current, and the battery  
voltage. The device operates like a linear regulator: for voltages up to the Input Overvoltage threshold, the output  
is held at 5.5V (bq24300), 5.0V (bq24305) or 4.5V (bq24304). In case of an input overvoltage condition, if the  
overvoltage condition persists for more than a few microseconds, the IC removes power from the charging circuit  
by turning off an internal switch. In the case of an overcurrent condition, it limits the current to a safe value for a  
blanking duration before turning the switch off. Additionally, the IC also monitors its own die temperature and  
switches off if it becomes too hot.  
The IC also offers optional protection against reverse voltage at the input with an external P-channel MOSFET.  
PINOUT  
APPLICATION SCHEMATIC  
AC Adapter  
VDC  
OUT  
IN  
1
8
6
IN  
VSS  
1
2
3
4
8
OUT  
NC  
1 μF  
bq24080  
GND  
1 μF  
Charger IC  
7
bq2430x  
VBAT  
bq24300  
bq24304  
bq24305  
SYSTEM  
PGATE  
NC  
6
100 kW  
VBAT  
CE  
5
5
2
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
PowerPAD is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2007–2008, Texas Instruments Incorporated  
bq24300  
bq24304  
bq24305  
SLUS764BAUGUST 2007REVISED JUNE 2008........................................................................................................................................................ www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ORDERING INFORMATION(1)  
DEVICE(2)  
bq24300  
bq24304  
bq24305  
OUTPUT REGULATION VOLTAGE  
PACKAGE  
MARKING  
BZA  
5.5V  
4.5V  
5.0V  
2mm x 2mm SON  
2mm x 2mm SON  
2mm x 2mm SON  
CBS  
CHD  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
website at www.ti.com.  
(2) To order a 3000 pcs reel add R to the part number, or to order a 250 pcs reel add T to the part number.  
PACKAGE DISSIPATION RATINGS  
(1)  
PACKAGE  
RθJC  
RθJA  
DSG  
5°C/W  
75°C/W  
(1) This data is based on using the JEDEC High-K board and the exposed die pad is connected to a Cu pad on the board. The pad is  
connected to the ground plane by a 2x3 via matrix.  
ABSOLUTE MAXIMUM RATINGS(1)  
over operating free-air temperature range (unless otherwise noted)  
PARAMETER  
PIN  
VALUE  
–0.3 to 30  
–0.3 to 12  
–0.3 to 7  
2000  
UNIT  
V
IN, PGATE (with respect to VSS)  
OUT (with respect to VSS)  
Input voltage  
V
CE, VBAT (with respect to VSS)  
V
All (Human Body Model per JESD22-A114-E)  
All (Machine Model per JESD22-A115-A)  
V
200  
V
ESD Withstand voltage  
All (Charged Device Model per JESD22-C101-C)  
500  
V
IN (IEC 61000-4-2) (with IN pin bypassed to VSS with 1.0-µF low-ESR  
ceramic capacitor)  
15 (Air Discharge) 8  
(Contact)  
kV  
Junction temperature, TJ  
Storage temperature, TSTG  
–40 to 150  
–65 to 150  
300  
°C  
°C  
°C  
Lead temperature (soldering, 10 seconds)  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
RECOMMENDED OPERATING CONDITIONS  
over operating free-air temperature range (unless otherwise noted)  
MIN  
3.3  
0
MAX UNIT  
VIN  
TJ  
Input voltage range  
Junction temperature  
30  
V
125  
°C  
2
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Copyright © 2007–2008, Texas Instruments Incorporated  
Product Folder Link(s): bq24300 bq24304 bq24305  
bq24300  
bq24304  
bq24305  
www.ti.com ........................................................................................................................................................ SLUS764BAUGUST 2007REVISED JUNE 2008  
ELECTRICAL CHARACTERISTICS  
over junction temperature range 0°C TJ 125°C and recommended supply voltage (unless otherwise noted)  
PARAMETER  
POWER-ON-RESET  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
VUVLO  
Under-voltage lock-out, input  
power detected threshold  
CE = Low, VIN increasing from 0V to 3V  
CE = Low, VIN decreasing from 3V to 0V  
2.5  
2.7  
2.8  
V
VHYS-UVLO  
Hysteresis on UVLO  
200  
260  
8
300 mV  
ms  
tDGL(PGOOD)  
Deglitch time, input power  
detected status  
CE = Low, time measured from  
VIN 0V 4V 1µs rise time, to output turning ON  
IN  
bq24300  
340  
410  
65  
400  
Operating  
IDD  
VIN = 5V, CE = Low, no load on OUT pin  
CE = High, VIN = 5V  
µA  
µA  
bq24304,  
current  
500  
bq24305  
ISTDBY  
Standby current  
95  
INPUT TO OUTPUT CHARACTERISTICS  
VDO Drop-out voltage IN to OUT  
OUTPUT VOLTAGE REGULATION  
bq24300  
CE = Low, VIN = 4 V, IOUT = 250 mA  
CE = Low, VIN = 6 V, IOUT = 250 mA  
45  
75 mV  
5.30  
4.36  
4.85  
5.5  
4.5  
5.0  
5.70  
Output  
voltage  
VO(REG)  
bq24304  
bq24305  
4.64  
5.15  
V
V
INPUT OVERVOLTAGE PROTECTION  
Input overvoltage protection  
threshold  
CE = Low, VIN increasing from 4V to 12V  
CE = Low, VIN decreasing from 12V to 4V  
VOVP  
10.2  
60  
10.5  
100  
64  
10.8  
VHYS-OVP  
Hysteresis on OVP  
160 mV  
Blanking time, on OVP  
CE = Low, Time measured from  
VIN 4V 12V, 1µs rise time, to output turning OFF  
tBLANK(OVP)  
µs  
Recovery time from input  
overvoltage condition  
CE = Low, Time measured from  
VIN 12V 4V, 1µs fall time, to output turning ON  
tON(OVP)  
8
ms  
INPUT OVERCURRENT PROTECTION  
Input overcurrent protection  
range  
IOCP  
CE = Low, VIN = 5 V  
CE = Low  
250  
300  
5
350 mA  
ms  
Blanking time, input  
tBLANK(OCP)  
overcurrent detected  
Recovery time from input  
tREC(OCP)  
CE = Low  
64  
ms  
overcurrent condition  
BATTERY OVERVOLTAGE PROTECTION  
Battery overvoltage protection CE = Low, VIN > 4.3V, VVBAT increasing  
BVOVP  
4.30  
200  
4.35  
275  
4.40  
V
threshold  
from 4.2 V to 4.5 V  
Hysteresis on BVOVP  
CE = Low, VIN > 4.3V, VVBAT decreasing  
from 4.5 V to 3.9 V  
VHYS-BOVP  
IVBAT  
320 mV  
Input bias current on VBAT  
pin  
VVBAT = 4.4 V, TJ = 25°C  
10  
nA  
Deglitch time, battery  
overvoltage detected  
CE = Low, VIN > 4.4V, time measured from  
VVBAT 4.2V 4.5V, 1µs rise time to output turning OFF  
tDGL(BOVP)  
176  
14  
µs  
P-FET GATE DRIVER  
VGCLMP  
Gate driver clamp voltage  
VIN > 15V  
13  
15  
V
THERMAL PROTECTION  
Thermal shutdown  
temperature  
TJ(OFF)  
140  
20  
150  
°C  
°C  
TJ(OFF-HYS)  
Thermal shutdown hysteresis  
LOGIC LEVELS ON CE  
VIL  
VIH  
Low-level input voltage  
High-level input voltage  
0
0.4  
V
V
1.4  
Copyright © 2007–2008, Texas Instruments Incorporated  
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Product Folder Link(s): bq24300 bq24304 bq24305  
bq24300  
bq24304  
bq24305  
SLUS764BAUGUST 2007REVISED JUNE 2008........................................................................................................................................................ www.ti.com  
ELECTRICAL CHARACTERISTICS (continued)  
over junction temperature range 0°C TJ 125°C and recommended supply voltage (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
IIL  
Low-level input current  
High-level input current  
1
µA  
µA  
IIH  
VCE = 1.8V  
15  
Q1  
IN  
OUT  
Charge Pump,  
Bandgap,  
Bias Gen  
VREF  
VISNS  
VREF  
VREF  
Current Limiting Loop  
VO(REG) Loop  
OFF  
OCP Comparator  
VREF - D  
t
BLANK(OCP)  
VISNS  
VIN  
CONTROL  
AND STATUS  
CE  
V
OVP Comparator  
REF  
t
BLANK(OVP)  
VIN  
V
REF  
t
DGL(PGOOD)  
UVLO  
VBAT  
PGATE  
level shift  
VREF  
THERMAL  
SHUTDOWN  
t
DGL(BOVP)  
V
IN  
V
GCLMP  
VSS  
Figure 1. Simplified Block Diagram  
4
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Copyright © 2007–2008, Texas Instruments Incorporated  
Product Folder Link(s): bq24300 bq24304 bq24305  
 
bq24300  
bq24304  
bq24305  
www.ti.com ........................................................................................................................................................ SLUS764BAUGUST 2007REVISED JUNE 2008  
TERMINAL FUNCTIONS  
TERMINAL  
I/O  
DESCRIPTION  
NAME  
IN  
NO.  
1
I
Input power, connect to external DC supply. Connect external 0.1µF (minimum) ceramic capacitor to VSS  
Ground terminal  
VSS  
PGATE  
NC  
2
3
O
Gate drive for optional external P-FET  
4, 7  
5
Do not connect to any external circuit. These pins may have internal connections used for test purposes.  
Chip enable input. Active low. When CE = Hi, the input FET is off. Internally pulled down.  
Battery voltage sense input. Connect to pack positive terminal through a resistor.  
CE  
I
I
VBAT  
6
8
O
Output terminal to the charging system. Connect external 1µF capacitor (minimum) ceramic capacitor to  
VSS  
OUT  
There is an internal electrical connection between the exposed thermal pad and the VSS pin of the device.  
The thermal pad must be connected to the same potential as the VSS pin on the printed circuit board. Do  
not use the thermal pad as the primary ground input for the device. VSS pin must be connected to ground at  
all times.  
Thermal PAD  
1
2
3
8
7
OUT  
NC  
IN  
VSS  
bq24300  
bq24304  
bq24305  
VBAT  
6
5
PGATE  
NC  
CE  
4
Copyright © 2007–2008, Texas Instruments Incorporated  
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5
Product Folder Link(s): bq24300 bq24304 bq24305  
bq24300  
bq24304  
bq24305  
SLUS764BAUGUST 2007REVISED JUNE 2008........................................................................................................................................................ www.ti.com  
TYPICAL OPERATING PERFORMANCE  
Test conditions (unless otherwise noted) for typical operating performance are: VIN = 5 V, CIN = 1 µF, COUT = 1µF,  
RBAT = 100 k, ROUT = 22, TA = 25°C (see Figure 22 - Typical Application Circuit)  
V
IN  
V
IN  
V
t
OUT  
DGL(PGOOD)  
V
OUT  
I
OUT  
I
OUT  
Figure 2. Normal Power-On Showing Soft-Start.  
Figure 3. Power-On with Input Overvoltage.  
VIN 0 V to 6.0 V, tR = 20µs  
VIN 0 V to 12.0 V, tR = 50 µs  
12.8V  
11.5V  
V
IN  
V
IN  
5.92V  
5.9V  
V
V
OUT  
OUT  
t
BLANK(OVP)  
Figure 4. bq24300 OVP Response for Input Step.  
VIN 6.0 V to 10.3 V, tR = 2µs. Shows Immunity to Ringing  
Figure 5. bq24300 OVP Response for Input Step.  
VIN 6.0 V to 11.0 V, tR = 5µs. Shows OVP Blanking Time  
6
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Copyright © 2007–2008, Texas Instruments Incorporated  
Product Folder Link(s): bq24300 bq24304 bq24305  
 
 
bq24300  
bq24304  
bq24305  
www.ti.com ........................................................................................................................................................ SLUS764BAUGUST 2007REVISED JUNE 2008  
TYPICAL OPERATING PERFORMANCE  
V
< V  
OVP  
V
< V  
V
< V  
IN  
IN  
UVLO IN  
O(REG)  
V
IN  
t
ON(OVP)  
V
V
IN  
OUT  
V
OUT  
Figure 6. OUT Pin Response to Slow Input Ramp  
Figure 7. bq24300 Recovery from Input OVP.  
VIN 11.0 V to 5.0 V, tF = 400 µs  
R
= 22W  
OUT  
V
OUT  
V
IN  
R
= 13W  
OUT  
V
OUT  
I
limited to 300mA  
OUT  
I
OUT  
I
t
OUT  
REC(OCP)  
t
BLANK(OCP)  
Figure 8. OCP, Powering up with OUT Pin Shorted to VSS  
Figure 9. OCP, Showing Current Limiting and  
OCP Blanking. ROUT 22to 13for 2.6 ms to 22Ω  
R
= 22W  
OUT  
R
V
OUT  
= 13W  
OUT  
V
OUT  
I
OUT  
I
limited to 300mA  
BLANK(OCP)  
OUT  
I
OUT  
t
Figure 10. OCP, Showing Current Limiting and  
Figure 11. Zoom-in on Turn-off Region of Figure 10,  
Showing Soft-Stop  
OCP Blanking. ROUT 22to 13Ω  
Copyright © 2007–2008, Texas Instruments Incorporated  
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Product Folder Link(s): bq24300 bq24304 bq24305  
 
 
 
bq24300  
bq24304  
bq24305  
SLUS764BAUGUST 2007REVISED JUNE 2008........................................................................................................................................................ www.ti.com  
TYPICAL OPERATING PERFORMANCE (continued)  
V
VBAT  
t
DGL(BOVP)  
V
OUT  
Figure 12. Battery OVP. VVBAT Steps from 4.3 V to 4.5 V.  
Shows tDGL(BOVP) and Soft-Stop  
UNDERVOLTAGE LOCKOUT  
vs  
FREE-AIR TEMPERATURE  
DROPOUT VOLTAGE (IN to OUT)  
vs  
FREE-AIR TEMPERATURE  
2.75  
2.7  
80  
70  
VIN Increasing  
2.65  
60  
50  
40  
bq24304, VIN = 4 V  
2.6  
bq24300, VIN = 5 V  
2.55  
2.5  
VIN Decreasing  
30  
20  
2.45  
2.4  
-50  
-30  
-10  
10  
30 50  
Temperature - °C  
70  
90  
110  
130  
0
50  
100  
150  
Temperature - °C  
Figure 13.  
Figure 14.  
REGULATION VOLTAGE (OUT pin)  
vs  
OVP THRESHOLD  
vs  
FREE-AIR TEMPERATURE  
FREE-AIR TEMPERATURE  
10.6  
5.53  
5.52  
4.53  
10.55  
10.5  
4.52  
bq24304  
VIN Increasing  
5.51  
5.5  
4.51  
4.5  
10.45  
10.4  
bq24300  
10.35  
10.3  
VIN Decreasing  
5.49  
4.4  
0
20  
40  
60  
80  
100  
120  
0
20  
60  
80  
100  
120  
40  
Temperature - °C  
Temperature - °C  
Figure 15.  
Figure 16.  
8
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Product Folder Link(s): bq24300 bq24304 bq24305  
 
bq24300  
bq24304  
bq24305  
www.ti.com ........................................................................................................................................................ SLUS764BAUGUST 2007REVISED JUNE 2008  
TYPICAL OPERATING PERFORMANCE (continued)  
OCP THRESHOLD  
vs  
FREE-AIR TEMPERATURE  
BATTERY OVP THRESHOLDS  
vs  
FREE-AIR TEMPERATURE  
4.4  
315  
4.35  
310  
305  
BVOVP (VVBAT Increasing)  
4.3  
4.25  
300  
295  
4.2  
4.15  
290  
285  
4.1  
Bat-OVP Recovery (VVBAT Decreasing)  
4.05  
-50  
-30  
-10  
10  
30  
50  
70  
90  
110  
130  
0
20  
40  
60  
80  
100  
120  
Temperature - °C  
Temperature - °C  
Figure 17.  
Figure 18.  
LEAKAGE CURRENT (BAT pin)  
vs  
FREE-AIR TEMPERATURE  
SUPPLY CURRENT  
vs  
INPUT VOLTAGE  
2.5  
900  
800  
2
700  
600  
CE = L  
1.5  
500  
400  
1
300  
200  
CE = H  
0.5  
100  
0
0
0
5
10  
15  
20  
25  
30  
35  
0
20  
40  
60  
80  
100  
120  
VIN - V  
Temperature - °C  
Figure 19.  
Figure 20.  
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Product Folder Link(s): bq24300 bq24304 bq24305  
bq24300  
bq24304  
bq24305  
SLUS764BAUGUST 2007REVISED JUNE 2008........................................................................................................................................................ www.ti.com  
TYPICAL OPERATING PERFORMANCE (continued)  
PGATE VOLTAGE  
vs  
INPUT VOLTAGE  
18  
16  
14  
12  
10  
8
6
4
2
0
0
5
10  
15  
20  
25  
30  
35  
VIN - V  
Figure 21.  
10  
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Product Folder Link(s): bq24300 bq24304 bq24305  
bq24300  
bq24304  
bq24305  
www.ti.com ........................................................................................................................................................ SLUS764BAUGUST 2007REVISED JUNE 2008  
TYPICAL APPLICATION CIRCUITS  
AC Adapter  
1
8
6
VDC  
GND  
IN  
OUT  
COUT  
1 μF  
CIN  
1 μF  
bq24080  
Charger IC  
bq2430x  
RBAT  
SYSTEM  
VBAT  
100 KΩ  
2
5
Figure 22. Overvoltage, Overcurrent, and Battery Overvoltage Protection  
AC Adapter  
VDC  
QEXT  
100 kW  
1 μF  
1
GND  
IN  
8
OUT  
bq24080  
Charger IC  
PGATE  
3
1 μF  
bq2430x  
100 kW  
SYSTEM  
VBAT  
6
RBAT  
47 kW  
5
CE  
RCE  
2
Figure 23. OVP, OCP, BATOVP With Input Reverse-Polarity Protection  
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Product Folder Link(s): bq24300 bq24304 bq24305  
 
 
bq24300  
bq24304  
bq24305  
SLUS764BAUGUST 2007REVISED JUNE 2008........................................................................................................................................................ www.ti.com  
DETAILED FUNCTIONAL DESCRIPTION  
The bq24300 and bq24304 are highly integrated circuits designed to provide protection to Li-ion batteries from  
failures of the charging circuit. The IC continuously monitors the input voltage, the input current and the battery  
voltage, and protects down-stream circuitry from damage if any of these parameters exceeds safe values. The IC  
also monitors its own die temperature and switches off if it becomes too hot.  
The IC also offers optional protection against reverse voltage at the input with an external P-channel MOSFET.  
POWER DOWN  
The device remains in power down mode when the input voltage at the IN pin is below the under-voltage  
threshold VUVLO. The FET Q1 (see Figure 1) connected between IN and OUT pins is off.  
POWER-ON RESET  
The device resets all internal timers when the input voltage at the IN pin exceeds the UVLO threshold. The gate  
driver for the external P-FET is enabled. The IC then waits for duration tDGL(PGOOD) for the input voltage to  
stabilize. If, after tDGL(PGOOD), the input voltage and battery voltage are safe, FET Q1 is turned ON. The IC has a  
soft-start feature to control the inrush current. This soft-start minimizes voltage ringing at the input (the ringing  
occurs because the parasitic inductance of the adapter cable and the input bypass capacitor form a resonant  
circuit). Figure 2 shows the power-up behavior of the device. Because of the deglitch time at power-on, if the  
input voltage rises rapidly to beyond the OVP threshold, the device will not switch on at all, as shown in Figure 3.  
OPERATION  
The device continuously monitors the input voltage, the input current and the battery voltage as described in  
detail in the following sections:  
Input Overvoltage Protection  
As long as the input voltage is less than VO(REG), the output voltage tracks the input voltage (less the drop caused  
by RDSON of Q1). If the input voltage is greater than VO(REG) (plus the RDSON drop) and less than VOVP, the  
device acts like a series linear regulator, with the output voltage regulated to VO(REG). If the input voltage rises  
above VOVP, the output voltage is clamped to VO(REG) for a blanking duration tBLANK(OVP). If the input voltage  
returns below VOVP within tBLANK(OVP), the device continues normal operation (see Figure 4). This provides  
protection against turning power off due to transient overvoltage spikes while still protecting the system.  
However, if the input voltage remains above VOVP for more than tBLANK(OVP), the internal FET is turned off,  
removing power from the circuit (see Figure 5). When the input voltage comes back to a safe value, the device  
waits for tON(OVP) then switches on Q1 and goes through the soft-start routine (see Figure 7).  
Figure 6 describes graphically the behavior of the OUT pin over the entire range of input voltage variation.  
Input Overcurrent Protection  
The device can supply load current up to IOCP continuously. If the load current tries to exceed this threshold, the  
current is limited to IOCP for a maximum duration of tBLANK(OCP). If the load current returns to less than IOCP before  
tBLANK(OCP) times out, the device continues to operate (see Figure 9). However, if the overcurrent situation  
persists for tBLANK(OCP), FET Q1 is turned off for a duration of tREC(OCP). It is then turned on again and the current  
is monitored all over again (see Figure 10 and Figure 8).  
To prevent the input voltage from spiking up due to the inductance of the input cable, Q1 is not turned off rapidly  
in an overcurrent fault condition. Instead, the gate drive of Q1 is reduced slowly, resulting in a “soft-stop”, as  
shown in Figure 11.  
Battery Overvoltage Protection  
The battery overvoltage threshold BVOVP is internally set to 4.35V. If the battery voltage exceeds the BVOVP  
threshold for longer than tDGL(BOVP), FET Q1 is turned off (see Figure 12). This switch-off is also a soft-stop. Q1 is  
turned ON (soft-start) once the battery voltage drops to BVOVP – VHYS-BOVP  
.
12  
Submit Documentation Feedback  
Copyright © 2007–2008, Texas Instruments Incorporated  
Product Folder Link(s): bq24300 bq24304 bq24305  
bq24300  
bq24304  
bq24305  
www.ti.com ........................................................................................................................................................ SLUS764BAUGUST 2007REVISED JUNE 2008  
Thermal Protection  
If the junction temperature of the device exceeds TJ(OFF), FET Q1 is turned off. The FET is turned back on when  
the junction temperature falls below TJ(OFF) – TJ(OFF-HYS)  
.
Enable Function  
The IC has an enable pin which can be used to enable or disable the device. When the CE pin is driven high, the  
internal FET is turned off. When the CE pin is low, the FET is turned on if other conditions are safe. The CE pin  
has an internal pull-down resistor of 200 kΩ (typical) and can be left floating.  
PGATE Pin  
When used with an external P-Channel MOSFET, in addition to OVP, OCP and Battery-OVP, the device offers  
protection against input reverse polarity up to –30V. When operating with normal polarity, the IC first turns on  
due to current flow through the body-diode of the FET QEXT. The PGATE pin then goes low, turning ON QEXT  
.
For input voltages larger than VGCLMP, the voltage on the PGATE pin is driven to VIN – VGCLMP. This ensures that  
the gate to source voltage seen by QEXT does not exceed –VGCLMP  
.
Copyright © 2007–2008, Texas Instruments Incorporated  
Submit Documentation Feedback  
13  
Product Folder Link(s): bq24300 bq24304 bq24305  
bq24300  
bq24304  
bq24305  
SLUS764BAUGUST 2007REVISED JUNE 2008........................................................................................................................................................ www.ti.com  
Any State  
If VIN < VUVLO,  
go to Power Down  
Power Down  
All IC functions OFF  
No  
V
> V  
?
IN  
UVLO  
Yes  
Reset  
Timers reset  
Q1 off  
Turn on PGATE  
No  
CE = Low ?  
Yes  
V
< V  
?
Turn off Q1  
IN  
OVP  
No  
Yes  
I < I  
?
Wait t  
REC(OCP)  
Turn off Q1  
OCP  
No  
Yes  
V
< BV ?  
OVP  
Turn off Q1  
VBAT  
No  
No  
T
< T  
?
Turn off Q1  
J
J(OFF)  
Yes  
Turn on Q1  
Figure 24. Flow Diagram  
14  
Submit Documentation Feedback  
Copyright © 2007–2008, Texas Instruments Incorporated  
Product Folder Link(s): bq24300 bq24304 bq24305  
bq24300  
bq24304  
bq24305  
www.ti.com ........................................................................................................................................................ SLUS764BAUGUST 2007REVISED JUNE 2008  
APPLICATION INFORMATION  
Selection of RBAT  
:
It is strongly recommended that the battery not be tied directly to the VBAT pin of the device, as under some  
failure modes of the IC, the voltage at the IN pin may appear on the VBAT pin. This voltage can be as high as  
30V, and applying 30V to the battery in case of the failure of the device can be hazardous. Connecting the VBAT  
pin through RBAT prevents a large current from flowing into the battery in case of failure of the IC. In the interests  
of safety, RBAT should have a very high value. The problem with a large RBAT is that the voltage drop across this  
resistor because of the VBAT bias current IVBAT causes an error in the BVOVP threshold. This error is over and  
above the tolerance on the nominal 4.35V BVOVP threshold.  
Choosing RBAT in the range 100KΩ to 470kΩ is a good compromise. In the case of IC failure, with RBAT equal to  
100kΩ, the maximum current flowing into the battery would be (30V – 3V) × 100kΩ = 246µA, which is low  
enough to be absorbed by the bias currents of the system components. RBAT equal to 100kΩ would result in a  
worst-case voltage drop of RBAT X IVBAT 1mV. This is negligible compared to the internal tolerance of 50mV on  
the BVOVP threshold.  
If the Bat-OVP function is not required, the VBAT pin should be connected to VSS.  
Selection of RCE:  
The CE pin can be used to enable and disable the IC. If host control is not required, the CE pin can be tied to  
ground or left un-connected, permanently enabling the device.  
In applications where external control is required, the CE pin can be controlled by a host processor. As in the  
case of the VBAT pin (see above), the CE pin should be connected to the host GPIO pin through as large a  
resistor as possible. The limitation on the resistor value is that the minimum VOH of the host GPIO pin less the  
drop across the resistor should be greater than VIH of the bq2430x CE pin. The drop across the resistor is given  
by RCE X IIH.  
Selection of Input and Output Bypass Capacitors:  
The input capacitor CIN in Figure 22 and Figure 23 is for decoupling, and serves an important purpose.  
Whenever there is a step change downwards in the system load current, the inductance of the input cable  
causes the input voltage to spike up. CIN prevents the input voltage from overshooting to dangerous levels. It is  
strongly recommended that a ceramic capacitor of at least 1µF be used at the input of the device. It should be  
located in close proximity to the IN pin.  
COUT in Figure 23 is also important: If a very fast (< 1µs rise-time) overvoltage transient occurs at the input, the  
current that charges COUT causes the device’s current-limiting loop to kick in, reducing the gate-drive to FET Q1.  
This results in improved performance for input overvoltage protection. COUT should also be a ceramic capacitor of  
at least 1µF, located close to the OUT pin. COUT also serves as the input decoupling capacitor for the charging  
circuit downstream of the protection IC.  
PCB Layout Guidelines:  
1. This device is a protection device, and is meant to protect down-stream circuitry from hazardous voltages.  
Potentially, high voltages may be applied to this IC. It has to be ensured that the edge-to-edge clearances of  
PCB traces satisfy the design rules for the maximum voltages expected to be seen in the system.  
2. The device uses SON packages with a PowerPAD™. For good thermal performance, the PowerPAD should  
be thermally coupled with the PCB ground plane. In most applications, this will require a copper pad directly  
under the IC. This copper pad should be connected to the ground plane with an array of thermal vias.  
3. CIN and COUT should be located close to the IC. Other components like RBAT should also be located close to  
the IC.  
Copyright © 2007–2008, Texas Instruments Incorporated  
Submit Documentation Feedback  
15  
Product Folder Link(s): bq24300 bq24304 bq24305  
PACKAGE OPTION ADDENDUM  
www.ti.com  
11-Jul-2008  
PACKAGING INFORMATION  
Orderable Device  
BQ24300DSGR  
BQ24300DSGRG4  
BQ24300DSGT  
Status (1)  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
Drawing  
SON  
DSG  
8
8
8
8
8
8
8
8
8
8
8
8
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
SON  
SON  
SON  
SON  
SON  
SON  
SON  
SON  
SON  
SON  
SON  
DSG  
DSG  
DSG  
DSG  
DSG  
DSG  
DSG  
DSG  
DSG  
DSG  
DSG  
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
BQ24300DSGTG4  
BQ24304DSGR  
BQ24304DSGRG4  
BQ24304DSGT  
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
BQ24304DSGTG4  
BQ24305DSGR  
BQ24305DSGRG4  
BQ24305DSGT  
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
BQ24305DSGTG4  
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and  
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS  
compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is  
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the  
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take  
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on  
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited  
information may not be available for release.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
11-Jul-2008  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI  
to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
28-Jun-2008  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0 (mm)  
B0 (mm)  
K0 (mm)  
P1  
W
Pin1  
Diameter Width  
(mm) W1 (mm)  
(mm) (mm) Quadrant  
BQ24300DSGR  
BQ24300DSGT  
BQ24304DSGR  
BQ24304DSGT  
BQ24305DSGR  
BQ24305DSGT  
SON  
SON  
SON  
SON  
SON  
SON  
DSG  
DSG  
DSG  
DSG  
DSG  
DSG  
8
8
8
8
8
8
3000  
250  
179.0  
179.0  
179.0  
179.0  
179.0  
179.0  
8.4  
8.4  
8.4  
8.4  
8.4  
8.4  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
1.2  
1.2  
1.2  
1.2  
1.2  
1.2  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
Q2  
Q2  
Q2  
Q2  
Q2  
Q2  
3000  
250  
3000  
250  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
28-Jun-2008  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
BQ24300DSGR  
BQ24300DSGT  
BQ24304DSGR  
BQ24304DSGT  
BQ24305DSGR  
BQ24305DSGT  
SON  
SON  
SON  
SON  
SON  
SON  
DSG  
DSG  
DSG  
DSG  
DSG  
DSG  
8
8
8
8
8
8
3000  
250  
195.0  
195.0  
195.0  
195.0  
195.0  
195.0  
200.0  
200.0  
200.0  
200.0  
200.0  
200.0  
45.0  
45.0  
45.0  
45.0  
45.0  
45.0  
3000  
250  
3000  
250  
Pack Materials-Page 2  
IMPORTANT NOTICE  
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements,  
and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should  
obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are  
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TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard  
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www.ti.com/video  
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