BQ25071QWDQCTQ1 [TI]
汽车类单节电池、1A、磷酸铁锂电池线性充电器 | DQC | 10 | -40 to 125;
| 型号： | BQ25071QWDQCTQ1 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 汽车类单节电池、1A、磷酸铁锂电池线性充电器 | DQC | 10 | -40 to 125 电池 光电二极管 |
| 文件： | 总23页 (文件大小：710K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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bq25071-Q1
ZHCSEY1 –APRIL 2016
bq25071-Q1 采用 50mA LDO 的汽车级 1A、单节 LiFePO4 线性电池充电
器
1 特性
3 说明
1
•
•
适用于汽车电子 应用
具有符合 AEC-Q100 标准的下列结果：
bq25071-Q1 是一款高度集成的 LiFePO4 线性电池充
电器，面向空间受限的汽车 应用。该器件由 USB 端口
或交流适配器供电，并为单节 LiFePO4 电池提供高达
1A 的充电电流。30V 的额定输入电压支持未经稳压的
低成本适配器。
–
–
–
器件温度 1 级：-40°C 至 125°C 的环境运行温
度范围
器件人体放电模式 (HBM) 静电放电 (ESD) 分类
等级 H2
bq25071-Q1 具有一个电源输出，可在对电池充电的同
时为系统供电。输入电流既可通过 ISET 输入编程设定
在 100mA 至 1A 范围内，也可以在 USB500 模式下配
置。另外，IC 中还集成了一个 4.9V ±10% 50mA
LDO，用于为低功耗外部电路供电。
器件组件充电模式 (CDM) ESD 分类等级 C5
•
•
•
•
•
•
•
•
•
单节 LiFePO4 充电算法
30V 额定输入电压，具有 10.5V 过压保护 (OVP)
50mA 集成低压降线性稳压器 (LDO)
可编程充电电流（通过 ISET 和 EN 端子编程）
热调节和保护
LiFePO4 充电算法可消除锂电池充电周期中所用的恒
压模式控制下常见的电流逐渐减小过程，可大幅缩短充
电时间。在这种情况下，电池将快速充电至过充电压，
然后降至较低的浮充电压阈值。该充电器集成了具有充
电电流和电压感应功能的功率级，可在电流和电压调节
环路中获得高级别的精度。内部控制环路可在整个充电
周期内监视 IC 结温，并在温度超过内部温度阈值时减
小充电电流。
软启动特性可降低浪涌电流
电池负温度系数 (NTC) 监视
充电状态指示
具有可湿性侧面的 10 引脚小外形尺寸无引线
(SON) (2mm × 3mm) 封装
2 应用
•
•
•
•
•
•
汽车用紧急呼叫
器件信息 (1)
汽车远程信息处理
车辆全球定位系统 (GPS) 跟踪
车载网络视频摄像机
智能钥匙
部件号
封装
封装尺寸（标称值）
bq25071-Q1
WSON (10)
2.00mm x 3.00mm
(1) 如需了解所有可用封装，请见数据表末尾的可订购产品附录。
汽车娱乐备用电池
应用电路原理图
Pull-Up
bq25071-Q1
CHG
STATUS
VDD
USB or TA
VBUS
GND
D+
IN
OUT
D-
ABB
EN
BAT
TS
PACK+
TEMP
ISET
GND
PACK-
VCHG DET
USB DET
LDO
PWRPD
VUSBIN
ACDET
GPIO
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLUSCD6
bq25071-Q1
ZHCSEY1 –APRIL 2016
www.ti.com.cn
目录
8.2 Functional Block Diagram ....................................... 10
8.3 Feature Description................................................. 11
8.4 Device Functional Modes........................................ 13
Application and Implementation ........................ 15
9.1 Application Information............................................ 15
9.2 Typical Application ................................................. 15
9.3 System Examples ................................................... 17
1
2
3
4
5
6
7
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Device Comparison Table..................................... 3
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
7.1 Absolute Maximum Ratings ..................................... 4
7.2 ESD Ratings.............................................................. 4
7.3 Recommended Operating Conditions....................... 4
7.4 Thermal Information.................................................. 4
7.5 Electrical Characteristics........................................... 5
7.6 Timing Requirements................................................ 6
7.7 Typical Characteristics.............................................. 7
7.8 Typical Characteristics.............................................. 8
Detailed Description .............................................. 9
8.1 Overview ................................................................... 9
9
10 Power Supply Recommendations ..................... 18
11 Layout................................................................... 18
11.1 Layout Guidelines ................................................. 18
11.2 Layout Example .................................................... 18
12 器件和文档支持 ..................................................... 19
12.1 社区资源................................................................ 19
12.2 商标....................................................................... 19
12.3 静电放电警告......................................................... 19
12.4 Glossary................................................................ 19
13 机械、封装和可订购信息....................................... 19
8
4 修订历史记录
日期
修订版本
注释
2016 年 4 月
*
最初发布版本。
2
Copyright © 2016, Texas Instruments Incorporated
bq25071-Q1
www.ti.com.cn
ZHCSEY1 –APRIL 2016
5 Device Comparison Table
PART NUMBER
bq25071QWDQCRQ1
bq25071QWDQCTQ1
VBAT(OVCH)
3.7 V
VBAT(FLOAT)
3.5 V
V(OVP)
10.5 V
10.5 V
V(LDO)
4.9 V
4.9 V
3.7 V
3.5 V
6 Pin Configuration and Functions
DQC Package
10-Pin WSON
Top View
IN
ISET
1
2
3
10
9
OUT
GND
CHG
8
GND
LDO
TS
4
5
7
6
EN
BAT
Pin Functions
PIN
NAME
I/O
DESCRIPTION
NO.
Input power supply. IN is connected to the external DC supply (AC adapter or USB port). Bypass IN to GND
with at least a 0.1 μF ceramic capacitor.
IN
1
I
Input current programming bias pin. Connect a resistor from ISET to GND to program the input current limit
when the user programmable mode is selected by grounding the EN pin. The resistor range is between 1 kΩ
and 10 kΩ to set the current between 100 mA and 1 A.
ISET
2
O
GND
LDO
3, 9
4
–
Ground pin. Connect to the thermal pad and the ground plane of the circuit.
LDO output. LDO is regulated to 4.9V and drives up to 50 mA. Bypass LDO to GND with a 0.1 μF ceramic
O
capacitor. LDO is enabled when V(UVLO) < VIN < V(OVP)
.
Battery pack NTC monitoring input. Connect a resistor divider from LDO to GND with TS connected to the
center tap to set the charge temperature window. The battery pack NTC is connected in parallel with the
bottom resistor of the divider. See the Detailed Design Procedure section for details on the selecting the
proper component values.
TS
5
6
7
I
I
I
BAT
EN
BAT is the sense input for the battery voltage. Connect BAT and OUT to the battery.
Enable input. Drive EN high to disable the IC. Connect EN to GND to place the bq25071-Q1Q in the user
programmable mode using the ISET input where the input current is programmed. Leave EN floating to place
the bq25071-Q1Q in USB500 mode. See the Input Current Limit Control (EN) section for details on using the
EN interface.
Charge status indicator open-drain output. CHG is pulled low while the device is charging the battery. CHG
goes high impedance when the battery is fully charged.
CHG
OUT
8
O
O
System output connection. Bypass the OUT to GND with a 1 μF ceramic capacitor. Connect OUT and BAT
together.
10
There is an internal electrical connection between the exposed thermal pad and the GND pin of the device.
The thermal pad must be connected to the same potential as the GND pin on the printed circuit board. Do not
use the thermal pad as the primary ground input for the device. GND pin must be connected to ground at all
times.
Thermal
Pad
Pad
–
Copyright © 2016, Texas Instruments Incorporated
3
bq25071-Q1
ZHCSEY1 –APRIL 2016
www.ti.com.cn
7 Specifications
(1)
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
MIN
–0.3
–0.3
–0.3
MAX
30
UNIT
V
IN (with respect to GND)
Input Voltage
EN, TS (with respect to GND)
7
V
Output Voltage
BAT, OUT, LDO, CHG, ISET (with respect to GND)
7
V
Input Current (Continuous)
Output Current (Continuous)
Output Current (Continuous)
Output Sink Current
IN
1.2
1.2
100
5
A
BAT
LDO
CHG
A
mA
mA
°C
°C
Junction temperature, TJ
Storage temperature, TSTG
–40
–65
150
150
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground pin unless otherwise noted.
7.2 ESD Ratings
VALUE
±3000
±1000
UNIT
Human-body model (HBM), per aec q100-002(1)
Charged-device model (CDM), per AEC Q100-011
V(ESD)
Electrostatic discharge
V
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.3 Recommended Operating Conditions
MIN
MAX UNITS
3.75
VIN
IIN
IN operating voltage
Input current, IN
8
V
(1)
1
1
A
A
IOUT Output Current in charge mode, OUT
TJ Junction Temperature
-40
125
°C
(1) Charge current may be limited at low input voltages due to the dropout of the device.
7.4 Thermal Information
bq25071-Q1
(1)
THERMAL METRIC
DQC (WSON)
10 PINS
61.6
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
RθJC(top)
RθJB
65.5
22.8
°C/W
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
1.5
ψJB
22.7
RθJC(bot)
5.5
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
4
Copyright © 2016, Texas Instruments Incorporated
bq25071-Q1
www.ti.com.cn
ZHCSEY1 –APRIL 2016
7.5 Electrical Characteristics
Over junction temperature range–40°C ≤ TJ ≤ 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNITS
INPUT
V(UVLO)
Under-voltage lock-out
Hysteresis on V(UVLO)
VIN: 0 V → 4 V
3.15
3.30
300
3.55
V
VHYS(UVLO)
VIN: 4 V → 0 V
mV
Input power good if VIN > VBAT
VIN(SLP)
V(BAT) = 3.6 V, VIN: 3.5 V → 4 V
+
30
24
75
55
150
95
mV
mV
Valid input source threshold VIN(SLP) above
VBAT
VIN(SLP)
Input power good if VIN > VBAT
VIN(SLP)
+
V(BAT) = 3.6 V, VIN: 4 V → 3.5 V
VHYS(INSLP)
VOVP
Hysteresis on VIN(SLP)
V(BAT) = 3.6 V, VIN: 4 V → 3.5 V
VIN: 5 V → 11 V
32
10.5
100
mV
V
Input over-voltage protection threshold
Hysteresis on OVP
10.2
10.8
VHYS(OVP)
VIN: 11 V → 5 V
mV
QUIESCENT CURRENT
IBAT(PDWN)
Battery current into BAT, No input connected VIN = 0 V (1), V(CHG) = Low
6
0.25
0.5
2
μA
EN = HI, VIN = 5.5V
IIN(STDBY)
Standby current into IN pin
EN = HI, VIN ≤ V(OVP)
mA
EN = HI, VIN > V(OVP)
BATTERY CHARGER FAST-CHARGE
TA = -40°C to 125°C, IOUT = 50 mA,
VIN = 5 V
3.455
3.5 3.545
3.5 3.539
VBAT(REG)
Battery charge regulation voltage
V
TA = 25°C, VIN = 5 V, IOUT = 50 mA
3.455
3.55
100
VBAT(OVCH)
IIN(RANGE)
Battery overcharge voltage threshold
3.7
3.81
1000
500
V
User programmable input current limit range
R(ISET) = 1 kΩ to 1 0kΩ, EN = VSS
EN = FLOAT
mA
435
467
IIN(LIM)
Input current limit, or fast-charge current
mA
EN = VSS
KISET/RISET
R(ISET) = 1 kΩ to 10 kΩ, EN = VSS
4.35 V < VIN ≤ 8 V
,
,
860
1000
1000
500
1130
1185
900
AΩ
KISET
Fast charge current factor TA ≤ 85°C
R(ISET) = 1 kΩ to 10 kΩ, EN = VSS
3.75 V < VIN ≤ 4.35 V
815
AΩ
VDO(IN-OUT)
VIN – VOUT
VIN = 4.2 V, IOUT = 0.75 A
mV
ISET SHORT CIRCUIT PROTECTION
R(ISET): 900 Ω → 300 Ω, IOUT latches
RISET(MAX)
Highest resistor value considered a short fault off, Cycle power to reset, Fault range >
1.10 A
720
2
Ω
Maximum OUT current limit regulation
(Clamp)
IOUT(CL)
1
A
PRE-CHARGE AND CHARGE DONE
V(LOWV)
Pre-charge to fast-charge transition threshold
0.5
0.7
45
0.9
V
Precharge current to BAT during precharge
mode
I(PRECHARGE)
V(BAT) = 0 V to 0.7 V
V(BAT) falling
41.5
49.5
mA
RECHARGE OR REFRESH
V(RCH)
Recharge detection threshold hysteresis
150
200
4.9
350
5.1
mV
V
LDO
VIN = 5 V to 8 V,
I(LDO) = 0 mA to 50 mA
V(LDO)
LDO Output Voltage
4.7
60
I(LDO)
V(DO)
Maximum LDO Output Current
Dropout Voltage
mA
mV
VIN = 4.5V, I(LDO) = 50 mA
200
350
(1) Force V(CHG)
Copyright © 2016, Texas Instruments Incorporated
5
bq25071-Q1
ZHCSEY1 –APRIL 2016
www.ti.com.cn
Electrical Characteristics (continued)
Over junction temperature range–40°C ≤ TJ ≤ 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER
LOGIC LEVELS ON EN
TEST CONDITIONS
MIN
TYP
MAX UNITS
VIL
Logic low input voltage
Logic high input voltage
Logic FLOAT input voltage
0.4
V
V
VIH
1.4
V(FLT)
600
850
1100
1
mV
Maximum leakage sink or source current to
keep in FLOAT
I(FLTlkg)
µA
µA
Minimal drive current from an external device
for Low or High
IEN(DRIVE)
8
BATTERY-PACK NTC MONITOR (TS)
V(COLD)
V(CUTOFF)
V(HOT)
TS Cold Threshold
V(TS) Rising
23.6
12
25
1
25.8 %VLDO
%VLDO
TS Cold Cutoff Threshold
TS Hot Threshold
V(TS) Falling
V(TS) Falling
V(TS) Rising
12.5
1
13.2 %VLDO
%VLDO
VHOT(HYS)
CHG OUTPUT
VOL
TS Hot Cutoff Threshold
Output LOW voltage
Leakage current
I(SINK) = 1 mA
CHG = 5 V
0.45
1
V
IIH
μA
THERMAL REGULATION
TJ(REG)
Temperature Regulation Limit
TJ rising
TJ rising
TJ falling
125
155
20
°C
°C
°C
TJ(OFF)
Thermal shutdown temperature
Thermal shutdown hysteresis
TJ(OFF-HYS)
7.6 Timing Requirements
MIN
TYP
MAX
UNIT
INPUT
tBLK(OVP)
Input overvoltage blanking time
100
100
μs
μs
Time measured from VIN: 11 V → 5 V
1 μs fall-time to LDO = HI,
V(BAT) = 3.5 V
tREC(OVP)
Input overvoltage recovery time
Delay time, input power loss to
charger turn-off
Time measured from VIN: 5 V → 2.5 V
1 μs fall-time
tDGL(NO-IN)
32
ms
ms
ISET SHORT CIRCUIT PROTECTION
Deglitch time transition from I(SET)
short to IOUT disable
PRE-CHARGE AND CHARGE DONE
Deglitch time on pre-charge to fast-
tDGL(SHORT)
Clear fault by cycling V(BUS) or EN
1.5
tDGL1(LOWV)
25
25
ms
ms
charge transition
Deglitch time on fast-charge to pre-
charge transition
tDGL2(LOWV)
RECHARGE OR REFRESH
Deglitch time, recharge threshold
detected
BATTERY-PACK NTC MONITOR (TS)
tdgl(TS) Deglitch for TS Fault
tDGL(RCH)
V(BAT) falling to New Charge Cycle
Fault detected on TS to stop charge
25
25
ms
ms
6
Copyright © 2016, Texas Instruments Incorporated
bq25071-Q1
www.ti.com.cn
ZHCSEY1 –APRIL 2016
7.7 Typical Characteristics
VIN = 5 V, VBAT = 3.2 V, I (CHG) = 280 mA, Typical Application Circuit
1.5
1.4
1.3
4
3.5
3
1.6
1.4
1.2
1
1.2
1.1
1
V(BAT)
V(CHG)
I(BAT)
2.5
2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.8
0.6
0.4
0.2
0
1.5
1
0.5
0
0:00:00
0
1:12:00
2:24:00 3:36:00
Elapsed Time (hh:mm:ss)
4:48:00
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
G007
VIN = 4.5 V
TA = –40°C to 125°C
IOUT = 1 A
Figure 1. Voltage and Current vs Elapsed Time
Figure 2. Dropout Voltage vs Temperature
3.55
3.54
3.53
3.52
3.51
3.5
10.6
10.58
10.56
10.54
10.52
10.5
3.49
3.48
3.47
3.46
3.45
10.48
10.46
10.44
10.42
10.4
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Charge Current (A)
1
-40 -25 -10
5
20 35 50 65 80 95 110 125
G008
Temperature (èC)
D001
TA = –40°C to 125°C
Figure 3. Battery Regulation Voltage vs Charge Current
Figure 4. OVP Threshold vs Temperature
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.1
500 mA Current Limit
1 A Current Limit
100mA Current Limit
500mA Current Limit
1.05
1
0.95
0.9
0.85
0.8
Thermal Regulation
0.75
0.7
0.65
0.6
0.55
0.5
0.45
0.4
2.5
2.75
3
Battery Voltage (V)
3.25
3.5
5
6
7
8
9
10
G011
Input Voltage (V)
D102
VIN = 5 V
Figure 6. Input Current Limit vs Battery Voltage
Figure 5. Charge Current vs Input Voltage
Copyright © 2016, Texas Instruments Incorporated
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bq25071-Q1
ZHCSEY1 –APRIL 2016
www.ti.com.cn
7.8 Typical Characteristics
VBAT = 3.2 V, I (CHG) = 318 mA, Typical Application Circuit
3.52
3.5
20
-6 sigma
-5 sigma
Typical
+5 sigma
+6 sigma
15
10
5
3.48
3.46
3.44
3.42
3.4
0
-5
-10
-15
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
Input Voltage (V)
Input Voltage (V)
D100
D101
Figure 7. Charge Current Accuracy vs Input Voltage
Figure 8. Input Voltage vs Battery Charge Regulation
Voltage
8
Copyright © 2016, Texas Instruments Incorporated
bq25071-Q1
www.ti.com.cn
ZHCSEY1 –APRIL 2016
8 Detailed Description
8.1 Overview
The bq25071-Q1 is a highly integrated, automotive qualified, linear, LiFePO4 battery charger targeted at space-
limited automotive applications. It accepts power from either a USB port or AC adapter and charges a single-cell
LiFePO4 battery with up to 1 A of charge current. The 30 V input rating with 10.5 V input overvoltage protection
supports low-cost unregulated adapters.
The bq25071-Q1 has a single power output that simultaneously charges the battery and powers the system. The
input current is programmable from 100 mA up to 1 A using the ISET input or configurable for USB500. There is
also a 4.9 V ±10% 50 mA LDO is integrated into the IC for supplying low power external circuitry.
The LiFePO4 charging algorithm removes the constant voltage mode control typically used in Li-Ion battery
charge cycles which reduces charge time significantly. Instead, the battery is fast charged to the overcharge
voltage and then allowed to relax to a lower float charge voltage threshold. The charger power stage and charge
current sense functions are fully integrated. The charger function has high accuracy current and voltage
regulation loops, and charge status display. During the charge cycle, an internal control loop monitors the IC
junction temperature and reduces the charge current if an internal temperature threshold is exceeded.
Copyright © 2016, Texas Instruments Incorporated
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bq25071-Q1
ZHCSEY1 –APRIL 2016
www.ti.com.cn
8.2 Functional Block Diagram
[5h
+
v2
v1
hÜÇ
.!Ç
Lb
+
TJ(REG)
TJ
Charge Pump
IIN(REG)
+
1.5V
+
VBAT(REG)
L{9Ç
VIN(SLP)
L[La
+
+
VIN
VBAT
VUVLO
VIN
UVLO Comparator
Sleep Comparator
+
+
VOVP
VIN
VBAT
VBAT(REG)
Overcharge Comparator
OVP Comparator
9b
Ç{
Charge Control
/ID
Status Output
VLDO
TS Cold
+
Disable
+
TS Hot
Copyright © 2016, Texas Instruments Incorporated
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Copyright © 2016, Texas Instruments Incorporated
bq25071-Q1
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ZHCSEY1 –APRIL 2016
8.3 Feature Description
8.3.1 Input Overvoltage Protection
The bq25071-Q1 contains an input overvoltage protection circuit that disables the LDO output and charging
when the input voltage rises above V(OVP). This prevents damage from faulty adapters. The OVP circuitry
contains an 100 μs blanking period that prevents ringing on the input from line transients from tripping the OVP
circuitry falsely. If an adapter with an output greater than V(OVP) is plugged in, the IC completes soft-start power
up and then shuts down if the voltage remains above V(OVP) after 100 μs. The LDO remains off and charging
remains disabled until the input voltage falls below V(OVP)
.
8.3.2 Undervoltage Lockout (UVLO)
The bq25071-Q1 remains in power down mode when the input voltage is below the undervoltage lockout
threshold (V(UVLO)). During this mode, the control input (EN) is ignored. The LDO, the charge FET connected
between IN and OUT are off and the status output (CHG) is high impedance. Once the input voltage rises above
V(UVLO), the internal circuitry is turned on and the normal operating procedures are followed.
8.3.3 External NTC Monitoring (TS)
The bq25071-Q1 features a flexible, voltage based external battery pack temperature monitoring input. The TS
input connects to the NTC thermistor in the battery pack to monitor battery temperature and prevent dangerous
over-temperature conditions. During charging, the voltage at TS is continuously monitored. If the voltage at the
TS pin is outside of the operating range (V(HOT) to V(COLD) for longer than the built in 25 ms deglitch time,
charging is suspended. When the voltage measured at TS returns to within the operation window, charging
resumes. When a battery pack temperature fault occurs charging is suspended, but the CHG output remains low
and continues to indicate charging.
The temperature thresholds are programmed using a resistor divider from LDO to GND with the NTC thermistor
connected to the center tap from TS to GND. See Figure 9 for the circuit example. The value of R1 and R2 are
calculated using the following equations:
-R2 ´ RHOT ´ (0.125 - 1)
R1 =
0.125 ´ (R2 + RHOT)
(1)
-RHOT ´ RCOLD ´ (0.125 - 0.250)
R2 =
RHOT ´ 0.250 ´ (0.125 - 1) + RCOLD ´ 0.125 ´ (1 - 0.250)
(2)
RHOT is the expected thermistor resistance at the programmed hot threshold; RCOLD is the expected thermistor
resistance at the programmed cold threshold.
LDO
R1
VCOLD
PACK+
TS
TEMP
+
PACK-
VHOT
R2
+
bq25071-Q1
For applications that do not require the TS monitoring function, set R1 = 490 kΩ and R2 = 100 kΩ to set the TS
voltage at a valid level and maintain charging.
Figure 9. NTC Monitoring Function
Copyright © 2016, Texas Instruments Incorporated
11
bq25071-Q1
ZHCSEY1 –APRIL 2016
www.ti.com.cn
Feature Description (continued)
8.3.4 50-mA LDO (LDO)
The LDO output of the bq25071-Q1 is a low dropout linear regulator (LDO) that supplies up to 50 mA while
regulating to V(LDO). The LDO is active whenever the input voltage is above V(UVLO) and below V(OVP). It is not
affected by the EN input. The LDO output is used to power and protect circuitry such as USB transceivers from
transients on the input supply.
8.3.5 Charge Status Indicator (CHG)
The bq25071-Q1 contains an open drain CHG output that indicates charging state and faults. When charging a
battery in precharge or fastcharge mode, the CHG output is pulled to GND. Once the BAT output reaches the
overcharge voltage threshold, CHG goes high impedance to signal the battery is fully charged. When the battery
voltage drops below the recharge voltage threshold the CHG output is pulled low to signal the host of a new
charge cycle. Connect CHG to the required logic level voltage through a 1 kΩ to 100 kΩ resistor to use the signal
with a microprocessor. I(CHG) must be below 5 mA.
The IC monitors the CHG pin when no input is connected to verify if the system circuitry is active. If the voltage
at CHG is logic being drive low when no input is connected, the TS circuit is turned off for a low quiescent current
state. Once the voltage at CHG increases above logic high, the TS circuit is turned on.
8.3.6 Input Current Limit Control (EN)
The bq25071-Q1 contains a 3-state that controls the input current limit. Drive EN low to program the input current
limit to the user defined value programmed using ISET. Drive EN high to place the bq25071-Q1 in USB suspend
mode. In USB suspend mode, the input current into bq25071-Q1 is reduced. Leaving EN unconnected or
connected to a high impedance source programs the USB500 input current limit.
Table 1. EN Input Definition
EN
Low
Hi-Z
Hi
MODE
ISET
USB500
USB Suspend
12
Copyright © 2016, Texas Instruments Incorporated
bq25071-Q1
www.ti.com.cn
ZHCSEY1 –APRIL 2016
8.4 Device Functional Modes
8.4.1 Charging Operation
The bq25071-Q1 uses a charge algorithm that is unique to LiFePO4 chemistry cells. The current taper typically
seen as part of the constant voltage mode control usually present in Li-Ion battery charge cycles is replaced with
a floating regulation voltage with minimal charging current. This dramatically decreases the charge time. When
the bq25071-Q1 is enabled by EN, the battery voltage is monitored to verify which stage of charging must be
used. When V(BAT) < V(LOWV), the bq25071-Q1 charges in precharge mode; when V(BAT) > V(LOWV), the normal
charge cycle is used.
8.4.1.1 Charger Operation with Minimum System Voltage Mode Enabled
Constant Current
Fast Charge
Float-Voltage
Regulation
PRECHARGE
VOUT(OVCH)
VOUT(REG)
IFASTCHG
CHG = Hi-Z
Battery and
Output
Voltage
VLOWV
Battery
Current
IPRECHG
Figure 10. Typical Charging Cycle with Minimum System Voltage Enabled
8.4.1.2 Precharge Mode (V(BAT) ≤ V(LOWV)
)
The bq25071-Q1 enters precharge mode when VBAT ≤ V(LOWV). Upon entering precharge mode, the battery is
charged with a 47.5 mA current and CHG goes low.
8.4.1.3 Fast Charge Mode
Once V(BAT) > V(LOWV), the bq25071-Q1 enters constant current (CC) mode where charge current is regulated
using the internal MOSFETs between IN and OUT. The total current is shared between the output load and the
battery. Once the battery voltage charges up to VBAT(OVCH), the CHG output goes high indicating the charge cycle
is complete and the bq25071-Q1 switches the battery regulation voltage to VBAT(REG). The battery voltage is
allowed to relax down to VBAT(REG). The charger remains enabled and regulates the output to VBAT(REG). If at any
time the battery falls below V(RCH), the charge cycle restarts.
Copyright © 2016, Texas Instruments Incorporated
13
bq25071-Q1
ZHCSEY1 –APRIL 2016
www.ti.com.cn
Device Functional Modes (continued)
8.4.2 Programmable Input Current Limit (ISET)
When the charger is enabled, and the user programmable current limit is selected by the EN input, internal
circuits generate a current proportional to the input current at the ISET input. The current out of ISET is 1/1000
(±10%) of the charge current. This current, when applied to the external charge current programming resistor, R1
( Figure 11), generates an analog voltage that is regulated to program the fast charge current. Connect a resistor
from ISET to GND to program the input current limit using the following equation:
K(ISET)
1000A ´W
I(IN_LIM)
=
=
R(ISET)
R(ISET)
(3)
I(IN_LIM) is programmable from 100 mA to 1 A. The voltage at ISET can be monitored by an external host to
calculate the charging current to the battery. The input current is related to the ISET voltage using the following
equation:
1000
´
I
= V
IN
(ISET)
R(ISET)
(4)
Monitoring the ISET voltage allows for the host to calculate the actual charging current and therefore perform
more accurate termination. The input current to the system must be monitored and subtracted from the current
into the bq25071-Q1 which is show by V(ISET)
.
8.4.3 Sleep Mode
If the IN pin voltage is between V(UVLO) and V(BAT)+ VIN(SLP), the charge current is disabled, the safety timer
counting stops (not reset) and the CHG pin is high impedance. As the input voltage rises and the charger exits
sleep mode, the safety timer continues to count, charge is enabled and the CHG pin returns to its previous state.
8.4.4 Thermal Regulation and Thermal Shutdown
The bq25071-Q1 contains a thermal regulation loop that monitors the die temperature continuously. If the
temperature exceeds TJ(REG), the device automatically reduces the charging current to prevent the die
temperature from increasing further. In some cases, the die temperature continues to rise despite the operation
of the thermal loop, particularly under high VIN conditions. If the die temperature increases to TJ(OFF), the IC is
turned off. Once the device die temperature cools by TJ(OFF-HYS), the device turns on and returns to thermal
regulation. Continuous overtemperature conditions result in the pulsing of the load current. If the junction
temperature of the device exceeds TJ(OFF), the charge FET is turned off. The FET is turned back on when the
junction temperature falls below TJ(OFF) – TJ(OFF-HYS)
.
Note that these features monitor the die temperature of the bq25071-Q1. This is not synonymous with ambient
temperature. Self heating exists due to the power dissipated in the IC because of the linear nature of the battery
charging algorithm.
14
Copyright © 2016, Texas Instruments Incorporated
bq25071-Q1
www.ti.com.cn
ZHCSEY1 –APRIL 2016
9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The typical application circuit uses a single output which charges the battery and powers the system. Additionally
a 50-mA LDO can supply a low power external circuit.
The bq25071EVM-658 evaluation module (EVM) is a complete charger module for evaluating the bq25071-Q1.
Refer to SLUUB49.
9.2 Typical Application
V
GPIO
R2
100 kW
bq25071-Q1
STATUS
VDD
USB or TA
CHG
OUT
VBUS
GND
D+
IN
C1
0.1 mF
C2
1 mF
D-
ABB
EN
BAT
TS
PACK+
TEMP
ISET
GND
R1
1 kW
PACK-
VCHG DET
USB DET
LDO
PWRPD
C2
0.1 mF
R5
1.5 kW
R3
1.5 kW
VUSBIN
ACDET
R4
1.5 kW
GPIO
Copyright © 2016, Texas Instruments Incorporated
Figure 11. bq25071-Q1 Typical Application Circuit
9.2.1 Design Requirements
Table 2. Design Parameters
PARAMETER
EXAMPLE VALUE
5 V ±5%
Input supply range
Output voltage range
Output current rating
3.5 V
1000 mA
Copyright © 2016, Texas Instruments Incorporated
15
bq25071-Q1
ZHCSEY1 –APRIL 2016
www.ti.com.cn
9.2.2 Detailed Design Procedure
9.2.2.1 Selection of Input and Output Capacitors
In most applications, all that is needed is a high-frequency decoupling capacitor on the input power pin. For
normal charging applications, a 0.1 μF ceramic capacitor, placed in close proximity to the IN pin and GND pad
works best. In some applications, depending on the power supply characteristics and cable length, it may be
necessary to increase the input filter capacitor to avoid exceeding the OVP voltage threshold during adapter hot
plug events where the ringing exceeds the deglitch time.
The charger in the bq25071-Q1 requires a capacitor from OUT to GND for loop stability. Connect a 1 μF ceramic
capacitor from OUT to GND close to the pins for best results. More output capacitance may be required to
minimize the output drop during large load transients.
The LDO also requires an output capacitor for loop stability. Connect a 0.1 μF ceramic capacitor from LDO to
GND close to the pins. For improved transient response, this capacitor may be increased.
9.2.2.2 Thermal Considerations
The bq25071-Q1 is packaged in a thermally enhanced QFN package. The package includes a thermal pad to
provide an effective thermal contact between the IC and the printed circuit board (PCB). Full PCB design
guidelines for this package are provided in the application note entitled: QFN/SON PCB Attachment Application
Note (SLUA271).
The most common measure of package thermal performance is thermal impedance (θJA) measured (or modeled)
from the chip junction to the air surrounding the package surface (ambient). The mathematical expression for θJA
is:
Where:
T
- T
A
J
q
=
JA
P
D
(5)
TJ = chip junction temperature
TA = ambient temperature
PD = device power dissipation
Factors that can greatly influence the measurement and calculation of θJA include:
•
•
•
•
•
Whether or not the device is board mounted
Trace size, composition, thickness, and geometry
Orientation of the device (horizontal or vertical)
Volume of the ambient air surrounding the device under test and airflow
Whether other surfaces are in close proximity to the device being tested
The device power dissipation, PD, is a function of the charge rate and the voltage drop across the internal
PowerFET. It can be calculated from the following equation when a battery pack is being charged:
PD = (VIN – VOUT) × IOUT
Due to the charge profile of LiFePO4 batteries the maximum power dissipation is typically seen at the beginning
of the charge cycle when the battery voltage is at its lowest. See the charging profile, Figure 10. If the board
thermal design is not adequate the programmed fast charge rate current may not be achieved under maximum
input voltage and minimum battery voltage, as the thermal loop can be active, effectively reducing the charge
current to avoid excessive IC junction temperature.
16
Copyright © 2016, Texas Instruments Incorporated
bq25071-Q1
www.ti.com.cn
ZHCSEY1 –APRIL 2016
9.2.3 Application Curves
5V/div
V(CTRL)
V(LDO)
IOUT
5V/div
5V/div
VIN
5V/div
V(LDO)
200mA/div
200mA/div
2V/div
IOUT
2V/div
V(CHG)
V(CHG)
10ms/div
20ms/div
V(CTRL) = 0 V
Figure 13. Charger Enable Using EN
Figure 12. Adapter Plug-In With Battery Connected
5V/div
5V/div
V(CTRL)
5V/div
5V/div
V(LDO)
VIN
V(LDO)
200mA/div
IOUT
1A/div
2V/div
IOUT
2V/div
V(CHG)
V(CHG)
400μs/div
40μs/div
VIN = 5 V to 12 V
Figure 14. Charger Disable Using EN
Figure 15. OVP Fault
9.3 System Examples
R1
D1
0.1mF
USB or Adapter
CHG
OUT
VBUS
GND
D+
IN
C4
C3
C2
22 mF
C2
1 mF
1 mF
0.1mF
D-
bq25071-Q1
U1
EN
BAT
TS
PACK+
TEMP
R3
R4
11.3kW
24.3kW
ISET
GND
R2
1 kW
PACK-
LDO
PWRPD
C5
0.1mF
Copyright © 2016, Texas Instruments Incorporated
Figure 16. Schematic
Copyright © 2016, Texas Instruments Incorporated
17
bq25071-Q1
ZHCSEY1 –APRIL 2016
www.ti.com.cn
10 Power Supply Recommendations
In a typical application, the system is powered by a USB port or USB wall adapter.
The wide input voltage range supports low cost and unregulated adapters.
The minimum input voltage - where the charging process starts with a reduced charging current - could be 3.75
V when the battery voltage is below 3.5 V. The minimum input voltage can be up to 3.875 V when the battery is
close to be fully charged (Please refer to the Sleep Mode) or there is no battery presented. The maximum
recommended operating input voltage is up to 8 V; the overvoltage protection kicks in at 10.5 V and the
maximum input voltage rating is 30 V Input Rating.
11 Layout
11.1 Layout Guidelines
It is important to pay special attention to the PCB layout. The following provides some guidelines:
•
To obtain optimal performance, the decoupling capacitor from IN to GND (thermal pad) and the output filter
capacitors from OUT to GND (thermal pad) should be placed as close as possible to the bq25071-Q1, with
short trace runs to both IN, OUT and GND (thermal pad).
•
All low-current GND connections should be kept separate from the high-current charge or discharge paths
from the battery. Use a single-point ground technique incorporating both the small signal ground path and the
power ground path.
•
•
The high current charge paths into IN pin and from the OUT pin must be sized appropriately for the maximum
charge current in order to avoid voltage drops in these traces.
The bq25071-Q1 is packaged in a thermally enhanced SON package. The package includes a thermal pad to
provide an effective thermal contact between the IC and the printed circuit board (PCB); this thermal pad is
also the main ground connection for the device. Connect the thermal pad to the PCB ground connection. Full
PCB design guidelines for this package are provided in the application note entitled: QFN/SON PCB
Attachment Application Note (SLUA271).
11.2 Layout Example
The bottom plane is a ground plane that is connected to the top through vias.
18
版权 © 2016, Texas Instruments Incorporated
bq25071-Q1
www.ti.com.cn
ZHCSEY1 –APRIL 2016
12 器件和文档支持
12.1 社区资源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.2 商标
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.3 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损
伤。
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 机械、封装和可订购信息
以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对
本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本，请查阅左侧的导航栏。
版权 © 2016, Texas Instruments Incorporated
19
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Copyright © 2016, 德州仪器半导体技术（上海）有限公司
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
BQ25071QWDQCRQ1
BQ25071QWDQCTQ1
ACTIVE
ACTIVE
WSON
WSON
DQC
DQC
10
10
3000 RoHS & Green
250 RoHS & Green
SN
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 125
-40 to 125
11V
11V
SN
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
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(6)
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
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