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bq25100B

ZHCSEY2 –APRIL 2016

bq25100B 250mA 单节锂离子电池充电器，1mA 终止电流、

75nA 电池泄漏电流

1 特性

3 说明

1

•

充电中

bq25100B 器件是一款面向空间受限类便携式应用的高

度集成锂离子和锂聚合物线性充电器。具有输入过压

保护的高输入电压范围支持低成本、未稳压的适配器。

–

1% 充电电压准确度

10% 充电电流准确度

支持充电电流超低（10mA 至 250mA）的应用

最低支持 1mA 充电终止电流

bq25100B 具有一个可为电池充电的电源输出。如果在

10 小时的安全定时器期间内平均系统负载无法让电池

充满电，则可以使系统负载与电池并联。

超低电池输出泄漏电流：75nA（最大值）

可调节的终止和预充电阈值

电池充电经历以下三个阶段：调节，恒定电流和恒定电

压。在所有充电阶段，内部控制环路都会监控 IC 结

温，当其超过内部温度阈值时，它会减少充电电流。

高电压化学支持：4.30V

•

保护

–

30V 额定输入电压；具有 6.5V 输入过压保护

输入电压动态电源管理

充电器功率级和充电电流感测功能均完全集成。该充电

器具有高精度电流和电压调节环路以及充电终止功能。

预充电电流和终止电流阈值可通过 bq25100B 上的一

个外部电阻进行编程。快速充电电流值也可通过一个外

部电阻进行编程。

125°C 热调节；150°C 热关断保护

OUT 短路保护和 ISET 短路检测

固定 10 小时安全定时器

系统

–

针对电池组缺失情况的自动终止和定时器禁用模

式 (TTDM)

本文档包含针对 bq25100B 系列中其他器件的引用。

有关这些器件的更多信息，请参见相应数据表。本文档

引用了 CHG 引脚和 JEITA 温度功能。

–

采用小型 1.60mm × 0.90mm 芯片尺寸球状引

脚栅格阵列 (DSBGA) 封装

器件信息⁽¹⁾

封装

2 应用

器件型号

bq25100B

封装尺寸（标称值）

DSBGA (6)

1.60mm × 0.90mm

•

健身配件

智能手表

Bluetooth^®耳机

(1) 要了解所有可用封装，请见数据表末尾的可订购产品附录。

低功耗手持器件

典型应用图

SYSTEM

USB Port or

Adapter

VBUS

IN

OUT

TS

D+

D-

1ÛF

VSS

GND

PACK+

TEMP

ISET

HOST

1.35kΩ

PRETERM

PACK-

6kΩ

bq25100B

CE

Copyright

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

English Data Sheet: SLUSCG5

bq25100B

ZHCSEY2 –APRIL 2016

www.ti.com.cn

8.4 Device Functional Modes........................................ 18

Application and Implementation ........................ 22

9.1 Application Information............................................ 22

9.2 Typical Application .................................................. 22

1

2

3

4

5

6

7

特性.......................................................................... 1

9

应用.......................................................................... 1

说明.......................................................................... 1

修订历史记录 ........................................................... 2

Device Comparison Table..................................... 3

Pin Configuration and Functions......................... 3

Specifications......................................................... 4

7.1 Absolute Maximum Ratings ..................................... 4

7.2 ESD Ratings.............................................................. 4

7.3 Recommended Operating Conditions...................... 4

7.4 Thermal Information.................................................. 5

7.5 Electrical Characteristics.......................................... 5

7.6 Typical Characteristics.............................................. 9

Detailed Description ............................................ 12

8.1 Overview ................................................................. 12

8.2 Functional Block Diagram ....................................... 14

8.3 Feature Description................................................. 15

10 Power Supply Recommendations ..................... 24

10.1 Leakage Current Effects on Battery Capacity....... 24

11 Layout................................................................... 24

11.1 Layout Guidelines ................................................. 24

11.2 Layout Example .................................................... 25

11.3 Thermal Considerations........................................ 25

12 器件和文档支持 ..................................................... 26

12.1 器件支持 ............................................................... 26

12.2 相关链接................................................................ 26

12.3 商标....................................................................... 26

12.4 静电放电警告......................................................... 26

12.5 Glossary................................................................ 26

13 机械、封装和可订购信息....................................... 26

8

4 修订历史记录

日期

修订版本

注释

2016 年 4 月

*

最初发布。

2

bq25100B

www.ti.com.cn

ZHCSEY2 –APRIL 2016

5 Device Comparison Table

PART NUMBER

bq25100

V_O(REG)

4.20 V

4.30 V

4.284 V

4.35 V

4.06 V

V_OVP

6.5 V

PreTerm /CHG

PreTerm

CHG

TS

TS (JEITA)

bq25101

TS (JEITA)

TS

bq25100A

bq25100B⁽¹⁾

bq25100H

bq25101H

bq25100L⁽²⁾

PreTerm

CHG

TS

TS (JEITA)

TS

PreTerm

(1) The bq25100B is part of the bq25100 family of devices. Please see 器件支持 for viewing other devices.

(2) Product preview. Contact the local TI representative for device details.

6 Pin Configuration and Functions

YFP Package

6-Pin DSBGA

Top View

1

2

!

.

/

hÜÇ

Ç{

Lb

L{9Ç

ë{{

tw9-

Ç9wa

Pin Functions

I/O

DESCRIPTION

NAME

NUMBER

Input power, connected to external DC supply (AC adapter or USB port). Expected range of bypass

capacitors 1 μF to 10 μF, connect from IN to V_SS

IN

A2

I

.

Programs the fast-charge current setting. External resistor from ISET to VSS defines fast charge

current value. Recommended range is 13.5 kΩ (10 mA) to 0.54 kΩ (250 mA).

ISET

OUT

B2

A1

Battery Connection. System Load may be connected. Expected range of bypass capacitors 1 μF to

10 μF.

O

Programs the current termination threshold ( 1% to 50% of I_OUT, 1 mA minimum). The pre-charge

current is twice the termination current level.

PRE-TERM

C1

I

Expected range of programming resistor is 600 Ω to 30 kΩ (6k: I_CHG/10 for term; I_CHG/5 for

precharge)

Temperature sense pin connected to 10k at 25°C NTC thermistor, in the battery pack. Floating TS

pin or pulling high puts part in TTDM Charger mode and disables TS monitoring, Timers and

Termination. Pulling pin low disables the IC. If NTC sensing is not needed, connect this pin to VSS

through an external 10-kΩ resistor. A 250-kΩ resistor from TS to ground will prevent IC entering

TTDM mode when battery with thermistor is removed.

TS

B1

C2

I

VSS

–

Ground pin

3

bq25100B

ZHCSEY2 –APRIL 2016

www.ti.com.cn

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

MIN

–0.3

MAX

UNIT

V

IN (with respect to VSS)

30

7

OUT (with respect to VSS)

V

Input voltage

PRE-TERM, ISET, TS, CHG

(with respect to VSS)

–0.3

7

V

Input current

IN

300

15

mA

°C

Output current (continuous) OUT

Output sink current

Junction temperature

Storage temperature

CHG

T_J

–40

–65

150

T_stg

°C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage

values are with respect to the network ground terminal unless otherwise noted.

7.2 ESD Ratings

VALUE

±8000

UNIT

IEC61000-4-2 contact discharge⁽¹⁾

IEC61000-4-2 air-gap discharge⁽¹⁾

Pins A1, A2, B1⁽²⁾

Electrostatic

discharge

V_(ESD)

V

±15000

(1) The test was performed on IC pins that may potentially be exposed to the customer at the product level. The bq2510x IC requires a

minimum of the listed capacitance, external to the IC, to pass the ESD test.

(2) 1 µF between IN (pin A2) and GND,

1 µF between TS (pin B1) and GND,

2 µF between OUT (pin A1) and GND,

x5R ceramic or equivalent

7.3 Recommended Operating Conditions

(1)

see

MIN

3.5

NOM

28

UNIT

V

IN voltage

V_IN

IN operating voltage, restricted by V_DPMand V_OVP

Input current, IN pin

4.45

6.45

250

30

V

I_IN

mA

kΩ

°C

I_OUT

Current, OUT pin

R_PRE-TERM

R_ISET

R_TS

Programs precharge and termination current thresholds

Fast-charge current programming resistor

10k NTC thermistor range without entering BAT_EN or TTDM

Junction temperature

0.6

0.54

1.66

–5

13.5

258

125

T_J

(1) Operation with V_INless than 4.5V or in drop-out may result in reduced performance.

4

bq25100B

www.ti.com.cn

ZHCSEY2 –APRIL 2016

7.4 Thermal Information

bq25100B

THERMAL METRIC⁽¹⁾

YFP (DSBGA)

UNIT

6 PINS

132.9

1.3

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

°C/W

R_θJCtop

R_θJB

Junction-to-board thermal resistance

21.8

5.6

ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

ψ_JB

21.8

—

R_θJCbot

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.5 Electrical Characteristics

Over junction temperature range –5°C ≤ T_J≤ 125°C and recommended supply voltage (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

INPUT

UVLO

Undervoltage lockout exit

V_IN: 0 V → 4 V

V_IN: 4 V→0 V;

3.15

3.3

3.45

130

V

V_{HYS_UVLO}

Hysteresis on V_{UVLO_RISE}falling

263

mV

V_{UVLO_FALL}= V_{UVLO_RISE}– V_HYS-UVLO

Input power good detection

threshold is V_OUT+ V_IN-DT

Input power good if V_IN> V_OUT+ V_IN-DT;

V_OUT= 3.6 V; V_IN: 3.5 V → 4 V

V_IN-DT

15

60

31

29

mV

ms

V_HYS-INDT

t_{DGL(PG_PWR)}

t_{DGL(PG_NO-PWR)}

V_OVP

Hysteresis on V_IN-DTfalling

V_OUT= 3.6 V; V_IN: 4 V → 3.5 V

Time measured from V_IN: 0 V → 5 V 1-μs rise-

time to charge enables; V_OUT= 3.6 V

Deglitch time on exiting sleep

Deglitch time on V_HYS-INDTpower Time measured from V_IN: 5 V → 3.2 V 1-μs fall-

down. Same as entering sleep.

29

ms

V

time to charge disables; V_OUT= 3.6 V

Input over-voltage protection

threshold

V_IN: 5 V → 12 V

6.50

4.25

6.65

6.84

t_DGL(OVP-SET)

V_HYS-OVP

Input over-voltage blanking time

Hysteresis on OVP

V_IN: 5 V → 12 V

V_IN: 11 V → 5 V

113

110

μs

mV

Time measured from V_IN: 12 V → 5 V 1-μs fall-

time to charge enables

t_DGL(OVP-REC)

V_IN-DPM

Deglitch time exiting OVP

450

μs

Low input voltage protection.

Restricts lout at V_IN-DPM

Limit input source current to 50 mA;

V_OUT= 3.5 V; R_ISET= 1.35 kΩ

4.31

4.37

470

V

ISET SHORT CIRCUIT TEST

Highest resistor value considered R_ISET: 540 Ω → 250 Ω, Iout latches off;

a fault (short). Cycle power to reset

R_{ISET_SHORT}

t_{DGL_SHORT}

I_{OUT_CL}

426

1

Ω

Deglitch time transition from ISET Clear fault by disconnecting IN or cycling (high /

short to Iout disable

ms

mA

low) TS/BAT_EN

Maximum OUT current limit

regulation (Clamp)

V_IN= 5 V; V_OUT= 3.6 V; R_ISET: 540 Ω → 250 Ω;

I_OUTlatches off after t_DGL-SHORT

550

600

650

BATTERY SHORT PROTECTION

OUT pin short-circuit detection

threshold/ precharge threshold

V_OUT(SC)

V_OUT:3 V → 0.5 V; No deglitch

0.75

0.8

77

11

0.85

V

Recovery ≥ V_OUT(SC)+ V_OUT(SC-HYS); Rising; No

deglitch

V_OUT(SC-HYS)

I_OUT(SC)

OUT pin Short hysteresis

mV

mA

Source current to OUT pin during

short-circuit detection

9

13

QUIESCENT CURRENT

V_IN= 0 V; 0°C to 125°C

V_IN= 0 V; 0°C to 85°C

80

50

I_OUT(PDWN)

Battery current into OUT pin

nA

OUT pin current, charging

terminated

I_OUT(DONE)

I_IN(STDBY)

V_IN= 6 V; V_OUT> V_OUT(REG)

6

μA

Standby current into IN pin

TS = GND; V_IN≤ 6 V

125

TS = open, V_IN= 6 V;

I_CC

Active supply current, IN pin

TTDM – no load on OUT pin; V_OUT> V_OUT(REG)

;

0.75

1

mA

IC enabled

5

bq25100B

ZHCSEY2 –APRIL 2016

www.ti.com.cn

Electrical Characteristics (continued)

Over junction temperature range –5°C ≤ T_J≤ 125°C and recommended supply voltage (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

BATTERY CHARGER FAST-CHARGE

T_J= -5°C to 125°C; I_OUT= 0 mA to 250 mA;

V_IN= 5.0 V; V_TS-45°C≤ V_TS≤ V_TS-0°C(bq25100B)

4.25

4.266

10

4.284

4.305

V

V_OUT(REG)

Output voltage

T_J= -5°C to 55°C; I_OUT= 10mA to 75 mA;

V_IN= 5.0 V; V_TS-45°C≤ V_TS≤ V_TS-0°C(bq25100B)

4.305

Programmed output “fast charge” V_OUT(REG)> V_OUT> V_LOWV; V_IN= 5 V;

I_OUT(RANGE)

250

400

mA

current range

R_ISET= 0.54 kΩ to 13.5 kΩ

Adjust V_INdown until I_OUT= 0.2 A; V_OUT= 4.15 V;

R_ISET= 680 Ω; T_J≤ 100°C

V_DO(IN-OUT)

I_OUT

Drop-Out, VIN – VOUT

Output “fast charge” formula

240

mV

A

V_OUT(REG)> V_OUT> V_LOWV; V_IN= 5 V

R_ISET= K_ISET/I_OUT; 20 < I_OUT< 250 mA

R_ISET= K_ISET/I_OUT; 5 < I_OUT< 20 mA

K_ISET/R_ISET

135

129

125

145

K_ISET

Fast charge current factor

AΩ

135

PRECHARGE – SET BY PRETERM PIN

Pre-charge to fast-charge

transition threshold

V_LOWV

2.4

2.5

57

32

2.6

V

Deglitch time on pre-charge to

t_DGL1(LOWV)

μs

ms

fast-charge transition

Deglitch time on fast-charge to

t_DGL2(LOWV)

pre-charge transition

I_PRE-TERM

Refer to the Termination Section

Pre-charge current, default

setting

V_OUT< V_LOWV; R_ISET= 2.7 kΩ; R_PRE-TERM= High Z

or for bq25101/101H

%I_OUT-

18

20

22

320

347

11

CC

%

PRECHG

Pre-charge current formula

% Pre-charge Factor

R_PRE-TERM= K_PRE-CHG(Ω/%) × %_PRE-CHG(%)

R_PRE-TERM/K_PRE-CHG%

V_OUT< V_LOWV; V_IN= 5 V;

R_PRE-TERM= 6 kΩ to 30 kΩ;

R_ISET= 1.8 kΩ;

280

300

305

10

Ω/%

R_PRE-TERM= K_PRE-CHG× %I_PRE-CHG

,

where %I_PRE-CHGis 20 to 100%

K_PRE-CHG

V_OUT< V_LOWV; V_IN= 5 V;

R_PRE-TERM= 3 kΩ to 6 kΩ;

R_ISET= 1.8 kΩ;

265

R_PRE-TERM= K_PRE-CHG× %I_PRE-CHG

where %I_PRE-CHGis 10% to 20%

,

TERMINATION – SET BY PRE-TERM PIN

Termination threshold current,

V_OUT> V_RCH; R_ISET= 2.7 kΩ; R_PRE-TERM= High Z

or for bq25101/101H

%I_OUT-

9

default setting

CC

%

TERM

Termination current threshold

formula

R_PRE-TERM= K_TERM(Ω/%) × %TERM (%)

R_PRE-TERM/ K_TERM

V_OUT> V_RCH; V_IN= 5 V;

R_PRE-TERM= 6 kΩ to 30 kΩ;

R_ISET= 1.8 kΩ, R_PRE-TERM=K_TERM× %I_TERM

where %I_TERMis 10 to 50%

575

600

620

680

25

640

685

1001

27

,

V_OUT> V_RCH; V_IN= 5 V;

R_PRE-TERM= 3 kΩ to 6 kΩ ;

R_ISET= 1.8 kΩ, R_PRE-TERM= K_TERM× %I_TERM

where %I_TERMis 5 to 10%

K_TERM

% Term factor

555

352

Ω/%

,

V_OUT> V_RCH; V_IN= 5 V;

R_PRE-TERM= 750 Ω to 3 kΩ;

R_ISET= 1.8 kΩ, R_PRE-TERM= K_TERM× %I_TERM

where %I_TERMis 1.25% to 5%

,

Current for programming the

term. and pre-chg with resistor,

I_Term-Startis the initial PRE-TERM

current

I_PRE-TERM

R_PRE-TERM= 6 kΩ; V_OUT= 4.15 V

23

1

μA

ITERM

Termination current range

Termination current formula

Minimum absolute termination current

mA

%

%TERM

R_TERM/ K_TERM

29

Deglitch time, termination

detected

t_DGL(TERM)

ms

RECHARGE OR REFRESH

Recharge detection threshold –

V_O(REG)V_O(REG)–0.1 V_O(REG)–0.0

–0.125 01 75

V_RCH

V_IN= 5 V; V_TS= 0.5 V; V_OUT: 4.35 V → V_RCH

V

normal temp

6

bq25100B

www.ti.com.cn

ZHCSEY2 –APRIL 2016

Electrical Characteristics (continued)

Over junction temperature range –5°C ≤ T_J≤ 125°C and recommended supply voltage (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

V_IN= 5 V; V_TS= 0.5 V;

V_OUT: 4.25 V → 3.5V in 1 μs;

t_DGL(RCH)is time to ISET ramp

Deglitch time, recharge threshold

detected

t_DGL1(RCH)

29

ms

V_IN= 5 V; V_TS= 0.5 V;

V_OUT= 3.5 V inserted;

t_DGL(RCH)is time to ISET ramp

Deglitch time, recharge threshold

detected in OUT-Detect Mode

t_DGL2(RCH)

29

ms

BATTERY DETECT ROUTINE – (NOTE: In Hot mode V_O(REG)becomes V_{O_HT(REG)}

)

V_REG-BD

VOUT reduced regulation during

battery detect

V_O(REG)

0.550

-

V_O(REG)

0.500

-

V_O(REG)

0.450

-

V

V_IN= 5 V; V_TS= 0.5 V; Battery absent

I_BD-SINK

Sink current during V_REG-BD

2

mA

ms

Regulation time at V_REGor V_REG-

t_{DGL(HI/LOW REG)}

25

BD

V_O(REG)

0.150

-

V_O(REG)

0.100

-

V_O(REG)-

0.050

V_BD-HI

V_BD-LO

High battery detection threshold

Low battery detection threshold

V_IN= 5 V; V_TS= 0.5 V; Battery absent

V

V_REG-BD

+0.05

V_REG-BD

+0.1

V_REG-BD

+0.15

BATTERY CHARGING TIMERS AND FAULT TIMERS

Restarts when entering pre-charge;

Always enabled when in pre-charge.

t_PRECHG

t_MAXCH

Pre-charge safety timer value

Charge safety timer value

1700

1940

2250

s

Clears fault or resets at UVLO, TS disable, OUT

Short, exiting LOWV and Refresh

34000

38800

45000

BATTERY-PACK NTC MONITOR (see Note 1); TS pin: 10k NTC

I_NTC-10k

NTC bias current

V_TS= 0.3 V

V_TS= 0 V

48.5

27

50.5

30

52.5

33

μA

10k NTC bias current when

charging is disabled

I_NTC-DIS-10k

INTC is reduced prior to entering

TTDM to keep cold thermistor

from entering TTDM

I_{NTC-FLDBK-10k}

V_TS: Set to 1.525 V

4

5

6.5

μA

Termination and timer disable

mode Threshold – Enter

V_TTDM(TS)

V_TS: 0.5 V → 1.7 V; Timer held in reset

1550

1600

1650

mV

V_HYS-TTDM(TS)

V_CLAMP(TS)

Hysteresis exiting TTDM

V_TS: 1.7 V → 0.5 V; Timer enabled

100

mV

TS maximum voltage clamp

V_TS= Open (float)

1900

1950

2000

Deglitch exit TTDM between

states

57

8

ms

t_DGL(TTDM)

Deglitch enter TTDM between

states

μs

TS voltage where INTC is reduce INTC adjustment (90 to 10%; 45 to 6.6 uA) takes

V_{TS_I-FLDBK}

to keep thermistor from entering

TTDM

place near this spec threshold;

V_TS: 1.425 V → 1.525 V

1475

mV

C_TS

Optional capacitance – ESD

0.22

μF

Low temperature, charge

pending

Low temperature charging to pending;

V_TS: 1 V → 1.5 V

V_TS-0°C

1230

775

1255

1280

830

mV

At 0°C;

V_HYS-0°C

V_TS-10°C

V_HYS-10°C

Hysteresis

Charge pending to low temperature charging;

V_TS: 1.5 V → 1 V

100

800

55

mV

Normal charging to low temperature charging;

V_TS: 0.5 V → 1 V

Low temperature, half charge

Hysteresis

At 10°C;

Low temperature charging to normal charging;

V_TS: 1 V → 0.5 V

At 4.1V (bq25100/101) or 4.2V (bq25100H/101H);

Normal charging to high temperature charging;

V_TS: 0.5 V → 0.2 V

V_TS-45°C

V_HYS-45°C

V_TS-60°C

High temperature

Hysteresis

253

160

268

20

283

180

mV

At 45°C;

High tempemperature charging to normal

charging;

V_TS: 0.2 V → 0.5 V

bq25100/01/100H/101H/100L;

High temperature charge to pending;

V_TS: 0.2 V → 0.1 V

High temperature disable

170

7

bq25100B

ZHCSEY2 –APRIL 2016

www.ti.com.cn

Electrical Characteristics (continued)

Over junction temperature range –5°C ≤ T_J≤ 125°C and recommended supply voltage (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

At 60°C (bq25100/01/100H/101H/100L);

Charge pending to high temperature charging;

V_TS: 0.1 V → 0.2 V

V_HYS-60°C

Hysteresis

20

mV

Normal to cold operation; V_TS: 0.6 V → 1 V

Cold to normal operation; V_TS: 1 V → 0.6 V

50

12

t_{DGL(TS_10C)}

Deglitch for TS thresholds: 10C

ms

Deglitch for TS thresholds:

0/45/60C

t_DGL(TS)

Battery charging

30

92

12

Charge enable threshold, (10k

NTC)

V_TS-EN-10k

V_{TS-DIS_HYS-10k}

V_TS: 0 V → 0.175 V

V_TS: 0.125 V → 0 V

84

100

mV

HYS below V_TS-EN-10kto disable,

(10k NTC)

THERMAL REGULATION

T_J(REG)

Temperature regulation limit

125

155

20

°C

T_J(OFF)

Thermal shutdown temperature

Thermal shutdown hysteresis

T_J(OFF-HYS)

LOGIC LEVELS ON /CHG

V_OL

Output low voltage

Leakage current into IC

I_SINK= 5 mA

V _CHG= 5 V

0.4

1

V

I_LEAK

μA

8

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www.ti.com.cn

ZHCSEY2 –APRIL 2016

7.6 Typical Characteristics

Setup: Typical Applications Schematic; V_IN= 5 V, V_BAT= 3.6 V (unless otherwise noted)

VIN

VIN 2 V/div

2 V/div

VOUT 2 V/div

VOUT

2 V/div

IOUT 60 mA/div

VISET 1 V/div

t-time – 10 ms/div

t-time – 20 ms/div

No Battery, No Load

Hot Plug

Figure 1. Power Up Timing

Figure 2. OVP 7-V Adaptor

VIN 2 V/div

VTS 500 mV/div

VOUT 2 V/div

IOUT 60 mA/div

VISET 1 V/div

t-time – 50 ms/div

V_IN0 V -5 V-7 V-5 V

Figure 3. OVP from Normal Power-Up Operation

Figure 4. TS Enable and Disable

VIN 1 V/div

VIN 5 V/div

IOUT 60 mA/div

VOUT 2 V/div

IOUT 100 mA/div

VISET 1 V/div

t-time – 5 ms/div

t-time – 20 ms/div

V_INRegulated

Figure 5. DPM-Adaptor Current Limits

Figure 6. Hot Plug Source

with No Battery - Battery

Detection

9

bq25100B

ZHCSEY2 –APRIL 2016

www.ti.com.cn

Typical Characteristics (continued)

Setup: Typical Applications Schematic; V_IN= 5 V, V_BAT= 3.6 V (unless otherwise noted)

VIN 5 V/div

IOUT 100 mA/div

VOUT 2 V/div

VISET 1 V/div

IOUT 100 mA/div

t-time – 20 ms/div

t-time – 200 μs/div

No Load

Figure 7. Battery Removal

Figure 8.

ISET Shorted During Normal Operation

VIN 5 V/div

VOUT 5 V/div

IOUT 100 mA/div

VISET 1 V/div

t-time – 10 ms/div

20-Ω resistor at OUT, No input, VBAT = 3.7 V

Figure 10. Battery Removal

Figure 9. Battery Plug In

VIN 2 V/div

VISET 2 V/div

VOUT 2 V/div

ILOAD 70 mA/div

IOUT 400 mA/div

VISET 1 V/div

IOUT 70 mA/div

t-time – 10 ms/div

90-mA Load, 120-mA ICHG

Figure 11. ISET Short Prior to Power Up

Figure 12. Power Up

10

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ZHCSEY2 –APRIL 2016

Typical Characteristics (continued)

Setup: Typical Applications Schematic; V_IN= 5 V, V_BAT= 3.6 V (unless otherwise noted)

4.21

4.208

4.206

4.204

4.202

4.2

4.202

4.201

4.2

V_REG= 0èC

V_REG= 25èC

V_REG= 85èC

V_REG= 125èC

4.199

4.198

4.197

4.196

4.195

4.194

V_REG= 0èC

V_REG= 25èC

V_REG= 85èC

V_REG= 125èC

4.198

4.196

4.194

4.192

4.19

1 mA 10 mA 50 mA 100 mA 150 mA 200 mA 250 mA

Load Current (mA)

4.5 V

5 V

5.5 V

6 V

6.5 V

D001

D002

Input Voltage (V)

Figure 13. Load Regulation Over Temperature

Figure 14. Line Regulation Over Temperature

80

6.4

112

111

110

109

108

107

106

IOUT (mA)

VOUT (V)

70

60

50

40

30

20

10

0

5.6

4.8

4

3.2

2.4

1.6

0.8

0

I_O= 0èC

I_O= 25èC

I_O= 85èC

I_O= 125èC

2.5 V

3 V

3.5 V

4 V

4.1 V

D004

D003

Output Voltage (V)

bq25100 charge cycle, ICHG = 75 mA, VBAT_REG = 4.2 V

Figure 16. Battery Voltage vs Charge Current

Figure 15. Current Regulation Over Temperature

11

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ZHCSEY2 –APRIL 2016

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8 Detailed Description

8.1 Overview

The bq25100B is a highly integrated family of single cell Li-Ion and Li-Pol chargers. The charger can be used to

charge a battery, power a system or both. The charger has three phases of charging: pre-charge to recover a

fully discharged battery, fast-charge constant current to supply the charge safely and voltage regulation to safely

reach full capacity. The charger is very flexible, allowing programming of the fast-charge current and Pre-

charge/Termination Current. This charger is designed to work with a USB connection (100-mA limit) or Adaptor

(DC output). The charger also checks to see if a battery is present. The following discussion reviews all products

in the bq25100B family. Not all features apply to the bq25100B.

The charger also comes with

a

full set of safety features: JEITA Temperature Standard

(bq25100/01/100H/101H), Over-Voltage Protection, DPM-IN, Safety Timers, and ISET short protection. All of

these features and more are described in detail below.

The charger is designed for a single power path from the input to the output to charge a single cell Li-Ion or

Li-Pol battery pack. Upon application of a 5-V DC power source the ISET and OUT short checks are performed

to assure a proper charge cycle.

If the battery voltage is below the LOWV threshold, the battery is considered discharged and a preconditioning

cycle begins. The amount of precharge current can be programmed using the PRE-TERM pin which programs a

percent of fast charge current (10 to 100%) as the precharge current. This feature is useful when the system load

is connected across the battery “stealing” the battery current. The precharge current can be set higher to account

for the system loading while allowing the battery to be properly conditioned. The PRE-TERM pin is a dual

function pin which sets the precharge current level and the termination threshold level. The termination "current

threshold" is always half of the precharge programmed current level.

Once the battery voltage has charged to the VLOWV threshold, fast charge is initiated and the fast charge

current is applied. The fast charge constant current is programmed using the ISET pin. The constant current

provides the bulk of the charge. Power dissipation in the IC is greatest in fast charge with a lower battery voltage.

If the IC reaches 125°C, the IC enters thermal regulation, slows the timer clock by half, and reduces the charge

current as needed to keep the temperature from rising any further. Figure 17 shows the charging profile with

thermal regulation. Typically under normal operating conditions, the IC’s junction temperature is less than 125°C

and thermal regulation is not entered.

Once the cell has charged to the regulation voltage the voltage loop takes control and holds the battery at the

regulation voltage until the current tapers to the termination threshold. The termination can be disabled if desired.

Further details are described in the Operating Modes section.

12

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ZHCSEY2 –APRIL 2016

Overview (continued)

Thermal

Regulation

Phase

Current

Regulation

Phase

Voltage Regulation and

Charge Termination

Phase

Pre-

Conditioning

Phase

DONE

V

O(REG)

I

O(OUT)

Battery Current,

I

FAST-CHARGE

CURRENT

(OUT)

Battery

Voltage,

V

(OUT)

Charge

Complete

Status,

Charger

Off

PRE-CHARGE

CURRENT AND

TERMINATION

THRESHOLD

V

O(LOWV)

I

(TERM)

I

O(PRECHG)

T

(THREG)

0A

Temperature, Tj

T

DONE

(CHG)

T

(PRECHG)

Figure 17. Charging Profile With Thermal Regulation

13

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ZHCSEY2 –APRIL 2016

www.ti.com.cn

8.2 Functional Block Diagram

Internal Charge

Current Sense

w/ Multiple Outputs

IN

OUT

+

-

Input

Power

Detect

80 mV

IN

OUT

_

+

_

+

_

OUT

IN-DPM_REF

OUTREG_REF

T_J

Charge

Pump

_

+

FAST CHARGE

PRE-CHARGE

1.5V

125˘C_REF

ISET

IN

_

+

PRE-CHG Reference

_

+

22mA Startup Current

Limit

Internal Current

Sensing Resistor

Term Reference

T_J

+

_

+

150˘C_REF

Thermal Shutdown

Charge

Pump

25mA

PRE-TERM

IN

_

+

OVP_REF

+

_

OUT

+

_

V_{TERM_EN}

CHARGE

CONTROL

V_COOL-10˘C

_

+

_

+

V_WARM-45˘C

V_COLD-0˘C

_

+

_

+

V_HOT-60˘C

LO=LDO MODE

TS

V_LDO

+

_

+

_

HI=CHIP DISABLE

V_DISABLE

Cold Temperature Sink

Current

Disable Sink

Current = 20mA

= 45mA

V_CLAMP=1.4V

+

_

+

_

5mA

45mA

Copyright

14

bq25100B

www.ti.com.cn

ZHCSEY2 –APRIL 2016

8.3 Feature Description

8.3.1 Overvoltage-Protection (OVP) – Continuously Monitored

If the input source applies an overvoltage, the pass FET, if previously on, turns off after a deglitch, t_BLK(OVP). The

timer stops counting. Once the overvoltage returns to a normal voltage, the timer and charge continues.

8.3.2 CHG Pin Indication (bq25101, bq25101H)

The charge pin has an internal open drain FET which is on (pulls down to VSS) during the first charge only

(independent of TTDM) and is turned off once the battery reaches voltage regulation and the charge current

tapers to the termination threshold set by the PRE-TERM resistor. The bq25101/01H terminates at 10% of the

programmed charge current. The charge pin is high impedance in sleep mode and OVP and returns to its

previous state once the condition is removed. Cycling input power, removing and replacing the battery, pulling

the TS pin low and releasing or entering pre-charge mode causes the CHG pin to go reset (go low if power is

good and a discharged battery is attached) and is considered the start of a first charge.

8.3.3 CHG Pin LED Pull-up Source (bq25101, bq25101H)

For host monitoring, a pull-up resistor is used between the CHG pin and the VCC of the host and for a visual

indication a resistor in series with an LED is connected between the /CHG pin and a power source. If the CHG

source is capable of exceeding 7 V, a 6.2-V zener should be used to clamp the voltage. If the source is the OUT

pin, note that as the battery changes voltage, and the brightness of the LEDs vary.

8.3.4 IN-DPM (V_IN-DPM or IN-DPM)

The IN-DPM feature is used to detect an input source voltage that is folding back (voltage dropping), reaching its

current limit due to excessive load. When the input voltage drops to the V_IN-DPMthreshold the internal pass FET

starts to reduce the current until there is no further drop in voltage at the input. This would prevent a source with

voltage less than V_IN-DPMto power the out pin. This is an added safety feature that helps protect the source from

excessive loads. This feature is not applicable for bq25100B.

8.3.5 OUT

The Charger’s OUT pin provides current to the battery and to the system, if present. This IC can be used to

charge the battery plus power the system, charge just the battery or just power the system (TTDM) assuming the

loads do not exceed the available current. The OUT pin is a current limited source and is inherently protected

against shorts. If the system load ever exceeds the output programmed current threshold, the output will be

discharged unless there is sufficient capacitance or a charged battery present to supplement the excessive load.

8.3.6 ISET

An external resistor is used to Program the Output Current (10 to 250 mA) and can be used as a current monitor.

R_ISET= K_ISET÷ I_OUT

(1)

Where:

I_OUTis the desired fast charge current;

K_ISETis a gain factor found in the electrical specification

For greater accuracy at lower currents, part of the sense FET is disabled to give better resolution. Going from

higher currents to low currents, there is hysteresis and the transition occurs around 50 mA.

The ISET resistor is short protected and will detect a resistance lower than ≉420 Ω. The detection requires at

least 50 mA of output current. If a “short” is detected, then the IC will latch off and can be reset by cycling the

power or cycling TS pin. The OUT current is internally clamped to a maximum current of 600 mA typical and is

independent of the ISET short detection circuitry.

For charge current that is below 50 mA, an extra RC circuit is recommended on ISET to acheive more stable

current signal. More detail is available in 9.1 Application Information.

15

bq25100B

ZHCSEY2 –APRIL 2016

www.ti.com.cn

Feature Description (continued)

60/ 4ꢀ/

10/

trogrammed ë.!Ç_w9D

0/

ꢄo hperaꢁion

5uring /old Caulꢁ

weduced ë.!Ç_w9D

trogrammed L/ID

(100%)

ꢀ0%

/old Caulꢁ

0

0ꢃ2

0ꢃ4

0ꢃ6

0ꢃ8

1ꢃ0

1ꢃ2

ë/h[5

1ꢃ4

1ꢃ6

1ꢃ8

Çerminaꢁion

5isable

ëIhÇ ëí!wꢂ

ë/hh[

Ç{ ëolꢁage-ë

Figure 18. JEITA Operation Over TS Bias Voltage - bq25100, bq25100H, bq25101, bq25101H

16

bq25100B

www.ti.com.cn

ZHCSEY2 –APRIL 2016

Feature Description (continued)

4ꢀ/

10/

trogrammed ë.!Ç_w9D

0/

ꢄo hperaꢁion

5uring /old Caulꢁ

Ioꢁ Caulꢁ

/ꢅarge 5isable

trogrammed L/ID

(100%)

ꢀ0%

/old Caulꢁ

0

0ꢃ2

0ꢃ4

0ꢃ6

0ꢃ8

1ꢃ0

1ꢃ2

ë/h[5

1ꢃ4

1ꢃ6

1ꢃ8

Çerminaꢁion

5isable

ëIhÇ ëí!wꢂ

ë/hh[

Ç{ ëolꢁage-ë

Figure 19. Standard Operation Over TS Bias Voltage – bq25100B, bq25100A, bq25100L

8.3.7 PRE_TERM – Pre-Charge and Termination Programmable Threshold

Pre-Term is used to program both the pre-charge current and the termination current threshold. The pre-charge

current level is a factor of two higher than the termination current level. The termination can be set between 5

and 50% (recommended range) of the programmed output current level set by ISET. If left floating the

termination and pre-charge are set internally at 10/20% respectively. The R_PRE-TERMis ranged from 600 Ω to 30

kΩ and the minimum termination current can be programmed to 1 mA. The pre-charge-to-fast-charge, V_lowv

threshold is set to 2.5 V.

R_PRE-TERM= %Term × K_TERM= %Pre-CHG × K_PRE-CHG

(2)

Where:

%Term is the percent of fast charge current where termination occurs;

%Pre-CHG is the percent of fast charge current that is desired during precharge;

K_TERMand K_PRE-CHGare gain factors found in the electrical specifications.

8.3.8 TS

The TS function for the bq25100B/bq25100A cuts the charge current level in half between 0°C and 10°C and

disables charging when the NTC temperature is above 45°C. The TS function for the

bq25100/bq25100H/bq25101/bq25101H is designed to follow the new JEITA temperature standard for Li-Ion and

Li-Pol batteries. There are now four thresholds, 60°C, 45°C, 10°C, and 0°C. Normal operation occurs between

10°C and 45°C. If between 0°C and 10°C the charge current level is cut in half and if between 45°C and 60°C

the regulation voltage is reduced to 4.1 V max for bq25100 and 4.2 V max for bq25100H, see Figure 18.

17

bq25100B

ZHCSEY2 –APRIL 2016

www.ti.com.cn

Feature Description (continued)

The TS feature is implemented using an internal 50μA current source to bias the thermistor (designed for use

with a 10-k NTC β = 3370 (SEMITEC 103AT-2 or Mitsubishi TH05-3H103F) connected from the TS pin to V_SS. If

this feature is not needed, a fixed 10-k can be placed between TS and V_SSto allow normal operation. This may

be done if the host is monitoring the thermistor and then the host would determine when to pull the TS pin low to

disable charge.

The TS pin has two additional features, when the TS pin is pulled low or floated/driven high. A low disables

charge and a high puts the charger in TTDM.

Above 45°C (60°C for bq25100/bq25100H/bq25101/bq25101H) or below 0°C the charge is disabled. Once the

thermistor reaches ≉–10°C the TS current folds back to keep a cold thermistor (between –10°C and –50°C) from

placing the IC in the TTDM mode. If the TS pin is pulled low into disable mode, the current is reduce to ≉30 μA.

Since the I_TScurent is fixed along with the temperature thresholds, it is not possible to use thermistor values

other than the 10-k NTC (at 25°C).

8.3.9 Timers

The pre-charge timer is set to 30 minutes. The pre-charge current, can be programmed to off-set any system

load, making sure that the 30 minutes is adequate.

The fast charge timer is fixed at 10 hours and can be increased real time by going into thermal regulation or IN-

DPM. The timer clock slows by a factor of 2, resulting in a clock than counts half as fast when in these modes. If

either the 30 minute or ten hour timer times out, the charging is terminated and for bq25101/1H the CHG pin

goes high impedance if not already in that state. The timer is reset by disabling the IC, cycling power or going

into and out of TTDM.

8.3.10 Termination

Once the OUT pin goes above VRCH, (reaches voltage regulation) and the current tapers down to the

termination threshold, a battery detect route is run to determine if the battery was removed or the battery is full. If

the battery is present, the charge current will terminate. If the battery was removed along with the thermistor,

then the TS pin is driven high and the charge enters TTDM. If the battery was removed and the TS pin is held in

the active region, then the battery detect routine will continue until a battery is inserted. The termination current

can be programmed down to 625 uA, however, the accuracy will reduce acoordingly when the termination

current is below 1 mA.

8.4 Device Functional Modes

8.4.1 Power-Down or Undervoltage Lockout (UVLO)

The bq25100B family is in power down mode if the IN pin voltage is less than UVLO. The part is considered

“dead” and all the pins are high impedance. Once the IN voltage rises above the UVLO threshold the IC will

enter Sleep Mode or Active mode depending on the OUT pin (battery) voltage.

8.4.2 Power-up

The IC is alive after the IN voltage ramps above UVLO (see sleep mode), resets all logic and timers, and starts

to perform many of the continuous monitoring routines. Typically the input voltage quickly rises through the

UVLO and sleep states where the IC declares power good, starts the qualification charge at 22 mA, sets the

charge current base on the ISET pin, and starts the safety timer.

8.4.3 Sleep Mode

If the IN pin voltage is between V_OUT+V_DTand UVLO, the charge current is disabled, the safety timer counting

stops (not reset). As the input voltage rises and the charger exits sleep mode, the safety timer continues to count

and the charge is enabled. See Figure 20.

8.4.4 New Charge Cycle

A new charge cycle is started when a good power source is applied, performing a chip disable/enable (TS pin),

exiting Termination and Timer Disable Mode (TTDM), detecting a battery insertion or the OUT voltage dropping

below the VRCH threshold.

18

bq25100B

www.ti.com.cn

ZHCSEY2 –APRIL 2016

Device Functional Modes (continued)

!pply Lnpuꢀ

tower

Ls power good?

ë_.!Ç+ë_5Ç<ë_Lb<ë_hët

&ë_Üë[h<ë_Lb

bo

òes

bo

Ls cꢁip enaꢂled?

ë_Ç{>ë_9b

òes

{eꢀ Lnpuꢀ /urrenꢀ [imiꢀ ꢀo 22m!

!nd {ꢀarꢀ /ꢁarge

terform L{9Ç & hÜÇ sꢁorꢀ ꢀesꢀs

{eꢀ cꢁarge currenꢀ

ꢂased on L{9Ç seꢀꢀing

ꢃeꢀurn ꢀo

/ꢁarge

Figure 20. bq25100B Power-Up Flow Diagram

19

bq25100B

ZHCSEY2 –APRIL 2016

www.ti.com.cn

Device Functional Modes (continued)

8.4.5 Termination and Timer Disable Mode (TTDM) - TS Pin High

The battery charger is in TTDM when the TS pin goes high from removing the thermistor (removing battery

pack/floating the TS pin) or by pulling the TS pin up to the TTDM threshold.

When entering TTDM, the 10 hour safety timer is held in reset and termination is disabled. A battery detect

routine is run to see if the battery was removed or not. For bq25101/1H, if the battery was removed then the

CHG pin will go to its high impedance state if not already there. If a battery is detected the CHG pin does not

change states until the current tapers to the termination threshold, where the CHG pin goes to its high

impedance state if not already there (the regulated output will remain on).

The charging profile does not change (still has pre-charge, fast-charge constant current and constant voltage

modes). This implies the battery is still charged safely and the current is allowed to taper to zero.

When coming out of TTDM, the battery detect routine is run and if a battery is detected, then a new charge cycle

begins.

If TTDM is not desired upon removing the battery with the thermistor, one can add a 237-kΩ resistor between TS

and V_SSto disable TTDM. This keeps the current source from driving the TS pin into TTDM. This creates ≉0.1°C

error at hot and a ≉3°C error at cold.

8.4.6 Battery Detect Routine

The battery detect routine should check for a missing battery while keeping the OUT pin at a useable voltage.

The battery detect routine is run when entering and exiting TTDM to verify if battery is present, or run all the time

if battery is missing and not in TTDM. On power-up, if battery voltage is greater than V_RCHthereshold, a battery

detect routine is run to determine if a battery is present.

The battery detect routine is disabled while the IC is in TTDM, or has a TS fault. See Figure 21 for the Battery

Detect Flow Diagram.

8.4.7 Refresh Threshold

After termination, if the OUT pin voltage drops to V_RCH(100mV below regulation) then a new charge is initiated.

8.4.8 Starting a Charge on a Full Battery

The termination threshold is raised by ≉14% for the first minute of a charge cycle so if a full battery is removed

and reinserted or a new charge cycle is initiated, that the new charge terminates (less than 1 minute). Batteries

that have relaxed many hours may take several minutes to taper to the termination threshold and terminate

charge.

20

bq25100B

www.ti.com.cn

ZHCSEY2 –APRIL 2016

Device Functional Modes (continued)

Start

BATT_DETECT

Start 25ms timer

No

Timer Expired?

Yes

Battery Present

Turn off Sink Current

Return to flow

Yes

Is VOUT<VREG-100mV?

No

Set OUT REG

to VREG-400mV

Enable sink current

Reset & Start 25ms timer

No

Timer Expired?

Yes

Battery Present

Turn off Sink Current

Return to flow

Is VOUT>VREG-300mV?

No

Battery Absent

Don’t Signal Charge

Turn off Sink Current

Return to Flow

Figure 21. Battery Detect Routine

21

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ZHCSEY2 –APRIL 2016

www.ti.com.cn

9 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

9.1 Application Information

The bq25100B series of devices are highly integrated Li-Ion and Li-Pol linear chargers targeted at space-limited

portable applications. The fast charge current can be programmed from 10 mA to 250 mA through an external

resistor on ISET pin. The pre_charge and termination current can also be programmed through the resistor

connected on PRETERM pin. The device has complete system-level protection such as input under-voltage

lockout (UVLO), input over-voltage protection (OVP), sleep mode, thermal regulation, safety timers, and NTC

monitoring input.

9.2 Typical Application

This typical application shows a charger application design example.

SYSTEM

USB Port or

Adapter

VBUS

IN

OUT

TS

D+

D-

1ÛF

VSS

PACK+

GND

TEMP

HOST

ISET

2.7kΩ

3.4kΩ

Optional

RC

PRETERM

PACK-

10 nF

6kΩ

bq25100B

CE

9.2.1 Design Requirements

•

Supply voltage = 5 V

Fast charge current: I_OUT-FC= 40 mA;

Termination Current Threshold: %_IOUT-FC= 10% of Fast Charge or ~4 mA

Pre-Charge Current by default is twice the termination Current or ~8 mA

TS – Battery Temperature Sense = 10-k NTC (103AT)

/CE is an open drain control pin

9.2.2 Detailed Design Procedures

•

The regulation voltage is set to 4.2 V, the input voltage is 5 V and the charge current is programmed to 40

mA.

For charge current that is below 50 mA, an extra RC circuit is recommended on ISET to acheive more stable

current signal. For applications that need higher charge current, the RC circuit is not needed.

For applications that use more than 200-mA current, there could be a very low level ~1% of charge current

ringing in the output. The ringing can be removed by increasing the input capacitance.

22

bq25100B

www.ti.com.cn

ZHCSEY2 –APRIL 2016

Typical Application (continued)

9.2.2.1 Calculations

9.2.2.1.1 Program the Fast Charge Current, ISET:

R_ISET= [K_(ISET)/ I_(OUT)

]

from electrical characteristics table. . . K_(SET)= 135 AΩ

R_ISET= [135 AΩ/0.04 A] = 3.4 kΩ

Selecting the closest standard value, use a 3.4-kΩ resistor between ISET and Vss.

9.2.2.1.2 Program the Termination Current Threshold, ITERM:

R_PRE-TERM= K_(TERM)× %_IOUT-FC

R_PRE-TERM= 600 Ω/% × 10% = 6 kΩ

Selecting the closest standard value, use a 6-kΩ resistor between PRETERM and Vss.

One can arrive at the same value by using 20% for a pre-charge value (factor of 2 difference).

R_PRE-TERM= K_(PRE-CHG)× %_IOUT-FC

R_PRE-TERM= 300 Ω/% × 20%= 6 kΩ

9.2.2.1.3 TS Function

Use a 10-k NTC thermistor in the battery pack (103AT).

To Disable the temp sense function, use a fixed 10-kΩ resistor between the TS and VSS.

9.2.2.1.4 Selecting IN and OUT Pin Capacitors

In most applications, all that is needed is a high-frequency decoupling capacitor (ceramic) on the power pin, input

and output pins. Using the values shown on the application diagram is recommended. After evaluation of these

voltage signals with real system operational conditions, one can determine if capacitance values can be adjusted

toward the minimum recommended values (DC load application) or higher values for fast, high amplitude, pulsed

load applications. Note if designed for high input voltage sources (bad adaptors or wrong adaptors), the capacitor

needs to be rated appropriately. Ceramic capacitors are tested to 2x their rated values so a 16-V capacitor may

be adequate for a 30-V transient (verify tested rating with capacitor manufacturer).

9.2.3 bq25100 Application Performance Plots

VIN

VIN 2 V/div

2 V/div

VOUT 2 V/div

IOUT 60 mA/div

VISET 1 V/div

t-time – 20 ms/div

t-time – 50 ms/div

Hot Plug

V_IN0 V -5 V-7 V-5 V

Figure 22. OVP 7-V Adaptor

Figure 23. OVP from Normal Power-Up Operation

23

bq25100B

ZHCSEY2 –APRIL 2016

www.ti.com.cn

Typical Application (continued)

VIN 2 V/div

VTS 500 mV/div

VISET 2 V/div

ILOAD 70 mA/div

IOUT 60 mA/div

VISET 1 V/div

IOUT 70 mA/div

t-time – 50 ms/div

t-time – 10 ms/div

90-mA Load, 120-mA IOUT

Figure 24. TS Enable and Disable

Figure 25. Power Up

10 Power Supply Recommendations

10.1 Leakage Current Effects on Battery Capacity

To determine how fast a leakage current on the battery will discharge the battery is an easy calculation. The time

from full to discharge can be calculated by dividing the Amp-Hour Capacity of the battery by the leakage current.

For a 0.1-AHr battery and a 75-nA leakage current (100 mAHr/75 nA = 250000 Hours), it would take 1333k hours

or 152 years to discharge. In reality the self discharge of the cell would be much faster so the 75-nA leakage

would be considered negligible.

11 Layout

11.1 Layout Guidelines

To obtain optimal performance, the decoupling capacitor from IN to GND and the output filter capacitors from

OUT to GND should be placed as close as possible to the bq25100B, with short trace runs to both IN, OUT and

GND.

•

All low-current GND connections should be kept separate from the high-current charge or discharge paths

from the battery. Use a single-point ground technique incorporating both the small signal ground path and the

power ground path.

•

The high current charge paths into IN pin and from the OUT pin must be sized appropriately for the maximum

charge current in order to avoid voltage drops in these traces

24

bq25100B

www.ti.com.cn

ZHCSEY2 –APRIL 2016

11.2 Layout Example

Figure 26. Board Layout

11.3 Thermal Considerations

The most common measure of package thermal performance is thermal impedance (θ_JA) measured (or

modeled) from the chip junction to the air surrounding the package surface (ambient). The mathematical

expression for θ_JAis:

R_θJA= (T_J– T_A) / P

where

•

T_J= chip junction temperature

T_A= Ambient temperature

P = device power dissipation

(3)

Factors that can influence the measurement and calculation of R_θJAinclude:

1. Whether or not the device is board mounted

2. Trace size, composition, thickness, and geometry

3. Orientation of the device (horizontal or vertical)

4. Volume of the ambient air surrounding the device under test and airflow

5. Whether other surfaces are in close proximity to the device being tested

Due to the charge profile of Li-Ion and Li-Pol batteries the maximum power dissipation is typically seen at the

beginning of the charge cycle when the battery voltage is at its lowest. Typically after fast charge begins the pack

voltage increases to ≉3.4 V within the first 2 minutes. The thermal time constant of the assembly typically takes a

few minutes to heat up so when doing maximum power dissipation calculations, 3.4 V is a good minimum voltage

to use.

The device power dissipation, P, is a function of the charge rate and the voltage drop across the internal

PowerFET. It can be calculated from the following equation when a battery pack is being charged :

P = [V_(IN)– V_(OUT)] × I_(OUT)

(4)

25

bq25100B

ZHCSEY2 –APRIL 2016

www.ti.com.cn

Thermal Considerations (continued)

The thermal loop feature reduces the charge current to limit excessive IC junction temperature. It is

recommended that the design not run in thermal regulation for typical operating conditions (nominal input voltage

and nominal ambient temperatures) and use the feature for non typical situations such as hot environments or

higher than normal input source voltage. With that said, the IC will still perform as described, if the thermal loop

is always active.

12 器件和文档支持

12.1 器件支持

12.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT

CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES

OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER

ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

12.2 相关链接

下面的表格列出了快速访问链接。范围包括技术文档、支持与社区资源、工具和软件，以及样片或购买的快速访

问。

表 1. 相关链接

部件

产品文件夹

请单击此处

样片与购买

请单击此处

技术文档

请单击此处

工具与软件

请单击此处

支持与社区

请单击此处

bq25100

bq25101

bq25100A

bq25100H

bq25101H

bq25100L

12.3 商标

Bluetooth is a registered trademark of Bluetooth SIG, Inc..

12.4 静电放电警告

这些装置包含有限的内置 ESD 保护。存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损

伤。

12.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

13 机械、封装和可订购信息

以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对

本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本，请查阅左侧的导航栏。

26

重要声明

德州仪器(TI) 及其下属子公司有权根据 JESD46 最新标准, 对所提供的产品和服务进行更正、修改、增强、改进或其它更改，并有权根据

JESD48 最新标准中止提供任何产品和服务。客户在下订单前应获取最新的相关信息, 并验证这些信息是否完整且是最新的。所有产品的销售

都遵循在订单确认时所提供的TI 销售条款与条件。

TI 保证其所销售的组件的性能符合产品销售时 TI 半导体产品销售条件与条款的适用规范。仅在 TI 保证的范围内，且 TI 认为有必要时才会使

用测试或其它质量控制技术。除非适用法律做出了硬性规定，否则没有必要对每种组件的所有参数进行测试。

TI 对应用帮助或客户产品设计不承担任何义务。客户应对其使用 TI 组件的产品和应用自行负责。为尽量减小与客户产品和应用相关的风险，

客户应提供充分的设计与操作安全措施。

TI 不对任何 TI 专利权、版权、屏蔽作品权或其它与使用了 TI 组件或服务的组合设备、机器或流程相关的 TI 知识产权中授予的直接或隐含权

限作出任何保证或解释。TI 所发布的与第三方产品或服务有关的信息，不能构成从 TI 获得使用这些产品或服务的许可、授权、或认可。使用

此类信息可能需要获得第三方的专利权或其它知识产权方面的许可，或是 TI 的专利权或其它知识产权方面的许可。

对于 TI 的产品手册或数据表中 TI 信息的重要部分，仅在没有对内容进行任何篡改且带有相关授权、条件、限制和声明的情况下才允许进行

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在转售 TI 组件或服务时，如果对该组件或服务参数的陈述与 TI 标明的参数相比存在差异或虚假成分，则会失去相关 TI 组件或服务的所有明

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客户认可并同意，尽管任何应用相关信息或支持仍可能由 TI 提供，但他们将独力负责满足与其产品及在其应用中使用 TI 产品相关的所有法

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及其后果、降低有可能造成人身伤害的故障的发生机率并采取适当的补救措施。客户将全额赔偿因在此类安全关键应用中使用任何 TI 组件而

对 TI 及其代理造成的任何损失。

在某些场合中，为了推进安全相关应用有可能对 TI 组件进行特别的促销。TI 的目标是利用此类组件帮助客户设计和创立其特有的可满足适用

的功能安全性标准和要求的终端产品解决方案。尽管如此，此类组件仍然服从这些条款。

TI 组件未获得用于 FDA Class III（或类似的生命攸关医疗设备）的授权许可，除非各方授权官员已经达成了专门管控此类使用的特别协议。

只有那些 TI 特别注明属于军用等级或“增强型塑料”的 TI 组件才是设计或专门用于军事/航空应用或环境的。购买者认可并同意，对并非指定面

向军事或航空航天用途的 TI 组件进行军事或航空航天方面的应用，其风险由客户单独承担，并且由客户独力负责满足与此类使用相关的所有

法律和法规要求。

TI 已明确指定符合 ISO/TS16949 要求的产品，这些产品主要用于汽车。在任何情况下，因使用非指定产品而无法达到 ISO/TS16949 要

求，TI不承担任何责任。

产品

应用

www.ti.com.cn/telecom

数字音频

www.ti.com.cn/audio

www.ti.com.cn/amplifiers

www.ti.com.cn/dataconverters

www.dlp.com

通信与电信

计算机及周边

消费电子

能源

放大器和线性器件

数据转换器

DLP® 产品

DSP - 数字信号处理器

时钟和计时器

接口

www.ti.com.cn/computer

www.ti.com/consumer-apps

www.ti.com/energy

www.ti.com.cn/dsp

工业应用

医疗电子

安防应用

汽车电子

视频和影像

www.ti.com.cn/industrial

www.ti.com.cn/medical

www.ti.com.cn/security

www.ti.com.cn/automotive

www.ti.com.cn/video

www.ti.com.cn/clockandtimers

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无线连通性

www.ti.com.cn/wirelessconnectivity

德州仪器在线技术支持社区

www.deyisupport.com

IMPORTANT NOTICE

邮寄地址：上海市浦东新区世纪大道1568 号，中建大厦32 楼邮政编码： 200122

PACKAGE OUTLINE

YFP0006

DSBGA - 0.5 mm max height

S

C

A

L

E

1

0

.

0

DIE SIZE BALL GRID ARRAY

B

E

A

BALL A1

CORNER

D

C

0.5 MAX

SEATING PLANE

0.05 C

0.19

0.13

BALL TYP

0.4

TYP

SYMM

C

B

D: Max = 1.608 mm, Min =1.547 mm

E: Max = 0.91 mm, Min = 0.85 mm

0.8

SYMM

TYP

0.4 TYP

A

0.25

0.21

C A B

6X

0.015

1

2

4223410/A 11/2016

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

www.ti.com

EXAMPLE BOARD LAYOUT

YFP0006

DSBGA - 0.5 mm max height

DIE SIZE BALL GRID ARRAY

(0.4) TYP

6X ( 0.23)

2

1

A

B

(0.4) TYP

SYMM

C

SYMM

LAND PATTERN EXAMPLE

SCALE:50X

0.05 MAX

0.05 MIN

METAL UNDER

SOLDER MASK

(

0.23)

METAL

(

0.23)

SOLDER MASK

OPENING

SOLDER MASK

OPENING

NON-SOLDER MASK

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

NOT TO SCALE

4223410/A 11/2016

NOTES: (continued)

3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.

For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).

www.ti.com

EXAMPLE STENCIL DESIGN

YFP0006

DSBGA - 0.5 mm max height

DIE SIZE BALL GRID ARRAY

(0.4) TYP

(R0.05) TYP

6X ( 0.25)

1

2

A

B

(0.4) TYP

SYMM

METAL

TYP

C

SYMM

SOLDER PASTE EXAMPLE

BASED ON 0.1 mm THICK STENCIL

SCALE:50X

4223410/A 11/2016

NOTES: (continued)

4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.

www.ti.com

重要声明和免责声明

TI 均以“原样”提供技术性及可靠性数据（包括数据表）、设计资源（包括参考设计）、应用或其他设计建议、网络工具、安全信息和其他资

源，不保证其中不含任何瑕疵，且不做任何明示或暗示的担保，包括但不限于对适销性、适合某特定用途或不侵犯任何第三方知识产权的暗示

担保。

所述资源可供专业开发人员应用TI 产品进行设计使用。您将对以下行为独自承担全部责任：(1) 针对您的应用选择合适的TI 产品；(2) 设计、

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许可。如因使用所述资源而产生任何索赔、赔偿、成本、损失及债务等，TI对此概不负责，并且您须赔偿由此对TI 及其代表造成的损害。

TI 所提供产品均受TI 的销售条款 (http://www.ti.com.cn/zh-cn/legal/termsofsale.html) 以及ti.com.cn上或随附TI产品提供的其他可适用条款的约

束。TI提供所述资源并不扩展或以其他方式更改TI 针对TI 产品所发布的可适用的担保范围或担保免责声明。IMPORTANT NOTICE

邮寄地址：上海市浦东新区世纪大道 1568 号中建大厦 32 楼，邮政编码：200122


型号：	BQ25100BYFPR
厂家：	TEXAS INSTRUMENTS
描述：	具有 4.284V 充电电压和可编程预充电功能的独立型单节电池 250mA 线性电池充电器 \| YFP \| 6 \| -5 to 125 电池
文件：	总33页 (文件大小：1253K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BQ25100BYFPR [TI]

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