BQ25101HYFPT [TI]

具有 4.35V 充电电压和充电指示功能的独立式单节电池 250mA 线性电池充电器 | YFP | 6 | 0 to 125;


型号：	BQ25101HYFPT
厂家：	TEXAS INSTRUMENTS
描述：	具有 4.35V 充电电压和充电指示功能的独立式单节电池 250mA 线性电池充电器 \| YFP \| 6 \| 0 to 125 电池
文件：	总34页 (文件大小：1411K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

bq2510x 250mA 单节锂离子电池充电器，1mA 终止电流、75nA 电池泄漏

电流

1 特性

bq2510x 具有一个可为电池充电的电源输出。如果在

10 小时的安全定时器期间内平均系统负载无法让电池

充满电，则可以使系统负载与电池并联。

•

充电

–

1% 充电电压准确度

10% 充电电流准确度

电池充电经历以下三个阶段：调节，恒定电流和恒定电

压。在所有充电阶段，内部控制环路都会监控 IC 结

温，当其超过内部温度阈值时，它会减少充电电流。

支持充电电流超低（10mA 至 250mA）的应用

支持最低 1mA 充电终止电流

超低电池输出泄漏电流：75nA（最大值）

可调节的终止和预充电阈值

充电器功率级和充电电流感测功能均完全集成。该充

电器具有高精度电流和电压调节环路以及充电终止功

能。预充电电流和终止电流阈值可通过 bq2510x 上的

一个外部电阻进行编程。快速充电电流值也可通过一

个外部电阻进行编程。

高电压化学支持：bq25100H/01H 为

4.35V，bq25100A 为 4.30V

•

保护

–

30V 额定输入电压；具有 6.5V 输入过压保护

器件信息⁽¹⁾

输入电压动态电源管理

125°C 热调节；150°C 热关断保护

OUT 短路保护和 ISET 短路检测

器件型号

bq25100

封装

DSBGA (6)

封装尺寸（标称值）

1.60mm × 0.90mm

通过电池负温度系数 (NTC) 在 JEITA 范围内运

行 – 冷故障时的快速充电电流折半，热故障时

的电压为 4.06V (bq25100/01) 或 4.2V

(bq25100H/01H)

bq25101

DSBGA (6)

bq25100A

bq25100H

bq25101H

bq25100L⁽²⁾

–

固定 10 小时安全定时器

•

系统

(1) 如需了解所有可用封装，请见数据表末尾的可订购产品附录。

–

针对电池组缺失情况的自动终止和定时器禁用模

式 (TTDM)

(2) 产品预览。欲了解器件的详细信息，请联系当地的德州仪器

(TI) 代表。

–

采用小型 1.60mm × 0.90mm 芯片尺寸球状引

脚栅格阵列 (DSBGA) 封装

SYSTEM

USB Port or

Adapter

VBUS

OUT

D+

D-

1ÛF

VSS

GND

PACK+

2 应用

TEMP

ISET

HOST

•

健身配件

1.35k

PRETERM

PACK-

智能手表

Bluetooth^®耳机

bq25100

低功耗手持器件

3 说明

bq2510x 系列器件是面向空间受限类便携式应用的高

度集成锂离子和锂聚合物线性充电器。具有输入过压

保护的高输入电压范围支持低成本、未稳压的适配器。

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION

DATA.

English Data Sheet: SLUSBV8

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

www.ti.com.cn

8.4 Device Functional Modes........................................ 18

Application and Implementation ........................ 22

9.1 Application Information............................................ 22

特性.......................................................................... 1

应用.......................................................................... 1

说明.......................................................................... 1

修订历史记录 ........................................................... 2

Device Comparison Table..................................... 3

Pin Configuration and Functions......................... 3

Specifications......................................................... 4

7.1 Absolute Maximum Ratings .................................... 4

7.2 Handling Ratings....................................................... 4

7.3 Recommended Operating Conditions ..................... 4

7.4 Thermal Information.................................................. 4

7.5 Electrical Characteristics.......................................... 5

7.6 Typical Characteristics.............................................. 8

Detailed Description ............................................ 12

8.1 Overview ................................................................. 12

8.2 Functional Block Diagram ....................................... 14

8.3 Feature Description................................................. 15

9.2 Typical Application - Charger Application Design

Example ................................................................... 22

10 Power Supply Recommendations ..................... 24

10.1 Leakage Current Effects on Battery Capacity....... 24

11 Layout................................................................... 24

11.1 Layout Guidelines ................................................. 24

11.2 Layout Example .................................................... 25

11.3 Thermal Package.................................................. 25

12 器件和文档支持 ..................................................... 26

12.1 器件支持 ............................................................... 26

12.2 相关链接................................................................ 26

12.3 商标....................................................................... 26

12.4 静电放电警告......................................................... 26

12.5 术语表 ................................................................... 26

13 机械、封装和可订购信息....................................... 26

4 修订历史记录

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision B (October 2014) to Revision C

Page

•

已更改数据表标题.................................................................................................................................................................. 1

已删除器件信息表中 bq25101H 的产品预览注释 .................................................................................................................. 1

Deleted product preview note from bq25101H in Device Comparison Table ....................................................................... 3

Changes from Revision A (September 2014) to Revision B

Page

•

已删除器件信息表中 bq25101 和 bq25100H 的产品预览注释............................................................................................... 1

Deleted product preview note from bq25101 and bq25100H in Device Comparison Table ................................................. 3

Changes from Original (August 2014) to Revision A

Page

•

已发布为量产数据................................................................................................................................................................... 1

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

www.ti.com.cn

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

5 Device Comparison Table

PART NUMBER

bq25100

V_O(REG)

4.20 V

4.30 V

4.35 V

4.06 V

V_OVP

6.5 V

6.5V

PreTerm /CHG

PreTerm

CHG

TS (JEITA)

bq25101

bq25100A

bq25100H

bq25101H

bq25100L⁽¹⁾

PreTerm

CHG

TS (JEITA)

PreTerm

(1) Product preview. Contact the local TI representative for device details.

6 Pin Configuration and Functions

SPACING

6-Pin DSBGA

YFP Package

(Top View)

6-Pin DSBGA

YFP Package

(Top View)

OUT

ISET

VSS

ISET

VSS

PRE-

TERM

CHG

bq25100/100A/100H/100L

bq25101/101H

Pin Functions

I/O

DESCRIPTION

NAME

CHG

NUMBER

C1⁽¹⁾

Low (FET on) indicates charging and open drain (FET off) indicates no charging or the first charge

cycle complete.

Input power, connected to external DC supply (AC adapter or USB port). Expected range of bypass

capacitors 1 μF to 10 μF, connect from IN to V_SS

Programs the fast-charge current setting. External resistor from ISET to VSS defines fast charge

current value. Recommended range is 13.5 kΩ (10 mA) to 0.54 kΩ (250 mA).

ISET

Battery Connection. System Load may be connected. Expected range of bypass capacitors 1 μF to

10 μF.

OUT

Programs the current termination threshold ( 1% to 50% of Iout, 1mA minimum). The pre-charge

current is twice the termination current level.

PRE-TERM

C1⁽¹⁾

Expected range of programming resistor is 600 Ω to 30 kΩ (6k: Ichg/10 for term; Ichg/5 for

precharge)

Temperature sense pin connected to 10k at 25°C NTC thermistor, in the battery pack. Floating TS

pin or pulling high puts part in TTDM “Charger” mode and disables TS monitoring, Timers and

Termination. Pulling pin low disables the IC. If NTC sensing is not needed, connect this pin to VSS

through an external 10-kΩ resistor. A 250-kΩ resistor from TS to ground will prevent IC entering

TTDM mode when battery with thermistor is removed.

VSS

–

Ground pin

(1) Spins have different pin definitions

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

www.ti.com.cn

7 Specifications

7.1 Absolute Maximum Ratings⁽¹⁾

over operating free-air temperature range (unless otherwise noted)

MIN

–0.3

MAX

UNIT

IN (with respect to VSS)

OUT (with respect to VSS)

Input voltage

PRE-TERM, ISET, TS, CHG

(with respect to VSS)

–0.3

Input current

300

°C

Output current (continuous) OUT

Output sink current

CHG

T_J

Junction temperature

–40

150

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage

values are with respect to the network ground terminal unless otherwise noted.

7.2 Handling Ratings

MIN

MAX

UNIT

ESD

Electrostatic discharge

(IEC61000-4-2)⁽¹⁾

IN, OUT, TS

1 µF between IN and GND,

1 µF between TS and GND,

2 µF between OUT and GND,

x5R Ceramic or equivalent

contact

15 Air

T_STG

Storage temperature

–65

150

°C

(1) The test was performed on IC pins that may potentially be exposed to the customer at the product level. The bq2510x IC requires a

minimum of the listed capacitance, external to the IC, to pass the ESD test.

(1)

7.3 Recommended Operating Conditions

MIN

3.5

NOM

UNIT

IN voltage range

V_IN

IN operating voltage range, Restricted by V_DPMand V_OVP

Input current, IN pin

4.45

6.45

250

125

I_IN

°C

I_OUT

Current, OUT pin

T_J

Junction temperature

0.6

R_PRE-TERM

R_ISET

R_TS

Programs precharge and termination current thresholds

Fast-charge current programming resistor

10k NTC thermistor range without entering BAT_EN or TTDM

kΩ

0.54

1.66

13.5

258

(1) Operation with V_INless than 4.5V or in drop-out may result in reduced performance.

7.4 Thermal Information

bq25100

THERMAL METRIC⁽¹⁾

UNIT

YFP (6 PINS)

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

132.9

1.3

R_θJCtop

R_θJB

21.8

5.6

°C/W

ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

ψ_JB

21.8

n/a

R_θJCbot

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

www.ti.com.cn

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

7.5 Electrical Characteristics

Over junction temperature range 0°C ≤ T_J≤ 125°C and recommended supply voltage (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

INPUT

UVLO

Undervoltage lock-out exit

V_IN: 0 V → 4 V

V_IN: 4 V→0 V;

3.15

3.3

3.45

130

V_{HYS_UVLO}

Hysteresis on V_{UVLO_RISE}falling

250

V_{UVLO_FALL}= V_{UVLO_RISE}– V_HYS-UVLO

Input power good detection

threshold is V_OUT+ V_IN-DT

Input power good if V_IN> V_OUT+ V_IN-DT;

V_OUT= 3.6 V; V_IN: 3.5 V → 4 V

V_IN-DT

V_HYS-INDT

t_{DGL(PG_PWR)}

t_{DGL(PG_NO-PWR)}

V_OVP

Hysteresis on V_IN-DTfalling

V_OUT= 3.6 V; V_IN: 4 V → 3.5 V

Time measured from V_IN: 0 V → 5 V 1-μs rise-

time to charge enables; V_OUT= 3.6 V

Deglitch time on exiting sleep

Deglitch time on V_HYS-INDTpower Time measured from V_IN: 5 V → 3.2 V 1-μs fall-

down. Same as entering sleep.

time to charge disables; V_OUT= 3.6 V

Input over-voltage protection

threshold

V_IN: 5 V → 12 V

6.52

4.25

6.67

6.82

t_DGL(OVP-SET)

V_HYS-OVP

Input over-voltage blanking time

Hysteresis on OVP

V_IN: 5 V → 12 V

V_IN: 11 V → 5 V

113

110

μs

Time measured from V_IN: 12 V → 5 V 1-μs fall-

time to charge enables

t_DGL(OVP-REC)

V_IN-DPM

Deglitch time exiting OVP

450

μs

Low input voltage protection.

Restricts lout at V_IN-DPM

Limit input source current to 50 mA;

V_OUT= 3.5 V; R_ISET= 1.35 kΩ

4.31

4.37

450

ISET SHORT CIRCUIT TEST

Highest resistor value considered R_ISET: 540 Ω → 250 Ω, Iout latches off;

a fault (short). Cycle power to reset

R_{ISET_SHORT}

t_{DGL_SHORT}

I_{OUT_CL}

420

Ω

Deglitch time transition from ISET Clear fault by disconnecting IN or cycling (high /

short to Iout disable

low) TS/BAT_EN

Maximum OUT current limit

regulation (Clamp)

V_IN= 5 V; V_OUT= 3.6 V; R_ISET: 540 Ω → 250 Ω;

I_OUTlatches off after t_DGL-SHORT

550

600

650

BATTERY SHORT PROTECTION

OUT pin short-circuit detection

threshold/ precharge threshold

V_OUT(SC)

V_OUT:3 V → 0.5 V; No deglitch

0.75

0.8

0.85

Recovery ≥ V_OUT(SC)+ V_OUT(SC-HYS); Rising; No

deglitch

V_OUT(SC-HYS)

I_OUT(SC)

OUT pin Short hysteresis

Source current to OUT pin during

short-circuit detection

QUIESCENT CURRENT

V_IN= 0 V; 0°C to 125°C

V_IN= 0 V; 0°C to 85°C

I_OUT(PDWN)

Battery current into OUT pin

OUT pin current, charging

terminated

I_OUT(DONE)

I_IN(STDBY)

V_IN= 6 V; V_OUT> V_OUT(REG)

μA

Standby current into IN pin

TS = GND; V_IN≤ 6 V

125

TS = open, V_IN= 6 V;

I_CC

Active supply current, IN pin

TTDM – no load on OUT pin; V_OUT> V_OUT(REG)

;

0.75

IC enabled

BATTERY CHARGER FAST-CHARGE

T_J= 0°C to 125°C; I_OUT= 0 mA to 250 mA;

V_IN= 5.0 V; V_TS-45°C≤ V_TS≤ V_TS-0°C(bq25100/101)

4.16

4.26

4.2

4.3

4.23

4.33

T_J= 0°C to 125°C; I_OUT= 0 mA to 250 mA;

V_IN= 5.0 V; V_TS-45°C≤ V_TS≤ V_TS-0°C(bq25100A)

V_OUT(REG)

Output voltage

T_J= 0°C to 125°C; I_OUT= 0 mA to 250 mA;

V_IN= 5.0 V; V_TS-45°C≤ V_TS≤ V_TS-0°C

(bq25100H/101H)

4.31

4.35

4.38

T_J= -5°C to 55°C; I_OUT= 10mA to 75 mA;

V_IN= 5.0 V; V_TS-45°C≤ V_TS≤ V_TS-0°C(bq25100A)

4.275

4.02

4.16

4.3

4.06

4.2

4.325

4.1

V_IN= 5.0 V; I_OUT=10 mA to 250 mA;

V_TS-60°C≤ V_TS≤ V_TS-45°C(bq25100/101)

V_{O_HT(REG)}

Battery hot regulation voltage

V_IN= 5.0 V; I_OUT=10 mA to 250 mA;

4.24

250

V_TS-60°C≤ V_TS≤ V_TS-45°C(bq25100H/101H)

Programmed output “fast charge” V_OUT(REG)> V_OUT> V_LOWV; V_IN= 5 V;

current range R_ISET= 0.54 kΩ to 13.5 kΩ

I_OUT(RANGE)

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

www.ti.com.cn

Electrical Characteristics (continued)

Over junction temperature range 0°C ≤ T_J≤ 125°C and recommended supply voltage (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

Adjust V_INdown until I_OUT= 0.2 A; V_OUT= 4.15 V;

R_ISET= 680 Ω; T_J≤ 100°C

V_DO(IN-OUT)

I_OUT

Drop-Out, VIN – VOUT

Output “fast charge” formula

220

400

V_OUT(REG)> V_OUT> V_LOWV; V_IN= 5 V

R_ISET= K_ISET/I_OUT; 20 < I_OUT< 250 mA

R_ISET= K_ISET/I_OUT; 5 < I_OUT< 20 mA

K_ISET/R_ISET

135

129

125

145

K_ISET

Fast charge current factor

AΩ

135

PRECHARGE – SET BY PRETERM PIN

Pre-charge to fast-charge

transition threshold

V_LOWV

2.4

2.5

2.6

Deglitch time on pre-charge to

t_DGL1(LOWV)

μs

fast-charge transition

Deglitch time on fast-charge to

t_DGL2(LOWV)

pre-charge transition

I_PRE-TERM

Refer to the Termination Section

Pre-charge current, default

setting

V_OUT< V_LOWV; R_ISET= 2.7 kΩ; R_PRE-TERM= High Z

or for BQ25101/101H

%I_OUT-

320

340

PRECHG

Pre-charge current formula

% Pre-charge Factor

R_PRE-TERM= K_PRE-CHG(Ω/%) × %_PRE-CHG(%)

R_PRE-TERM/K_PRE-CHG%

V_OUT< V_LOWV; V_IN= 5 V;

R_PRE-TERM= 6 kΩ to 30 kΩ;

R_ISET= 1.8 kΩ;

280

300

Ω/%

R_PRE-TERM= K_PRE-CHG× %I_PRE-CHG

where %I_PRE-CHGis 20 to 100%

K_PRE-CHG

V_OUT< V_LOWV; V_IN= 5 V;

R_PRE-TERM= 3 kΩ to 6 kΩ;

R_ISET= 1.8 kΩ;

265

R_PRE-TERM= K_PRE-CHG× %I_PRE-CHG

where %I_PRE-CHGis 10% to 20%

TERMINATION – SET BY PRE-TERM PIN

Termination threshold current,

V_OUT> V_RCH; R_ISET= 2.7 kΩ; R_PRE-TERM= High Z

or for BQ25101/101H

%I_OUT-

default setting

TERM

Termination current threshold

formula

R_PRE-TERM= K_TERM(Ω/%) × %TERM (%)

R_PRE-TERM/ K_TERM

V_OUT> V_RCH; V_IN= 5 V;

R_PRE-TERM= 6 kΩ to 30 kΩ;

R_ISET= 1.8 kΩ, R_PRE-TERM=K_TERM× %I_TERM

where %I_TERMis 10 to 50%

575

600

620

680

640

685

1001

V_OUT> V_RCH; V_IN= 5 V;

R_PRE-TERM= 3 kΩ to 6 kΩ ;

R_ISET= 1.8 kΩ, R_PRE-TERM= K_TERM× %I_TERM

where %I_TERMis 5 to 10%

K_TERM

% Term factor

555

352

Ω/%

V_OUT> V_RCH; V_IN= 5 V;

R_PRE-TERM= 750 Ω to 3 kΩ;

R_ISET= 1.8 kΩ, R_PRE-TERM= K_TERM× %I_TERM

where %I_TERMis 1.25% to 5%

Current for programming the

term. and pre-chg with resistor,

I_Term-Startis the initial PRE-TERM

current

I_PRE-TERM

R_PRE-TERM= 6 kΩ; V_OUT= 4.15 V

μA

ITERM

Termination current range

Termination current formula

Minimum absolute termination current

%TERM

R_TERM/ K_TERM

Deglitch time, termination

detected

t_DGL(TERM)

RECHARGE OR REFRESH

V_IN= 5 V; V_TS= 0.5 V;

Recharge detection threshold –

normal temp

V_OUT: 4.25 V → V_{RCH (bq25100)}

V_OUT: 4.35 V → V_{RCH (bq25100A)}

;

V_O(REG)V_O(REG)–0.0 V_O(REG)–0.0

;

–0.125

V_OUT: 4.40 V → V_{RCH (bq25100H)}

V_RCH

V_IN= 5 V; V_TS= 0.2 V;

V_OUT: 4.15 V → V_{RCH (bq25100)}

V_OUT: 4.25 V → V_{RCH (bq25100H)}

Recharge detection threshold –

hot temp

V_{O_HT(REG)}

–0.130

V_{O_HT(REG)}

–0.105

V_{O_HT(REG)}

–0.080

;

V_IN= 5 V; V_TS= 0.5 V;

V_OUT: 4.25 V → 3.5V in 1 μs;

t_DGL(RCH)is time to ISET ramp

Deglitch time, recharge threshold

detected

t_DGL1(RCH)

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

www.ti.com.cn

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

Electrical Characteristics (continued)

Over junction temperature range 0°C ≤ T_J≤ 125°C and recommended supply voltage (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

V_IN= 5 V; V_TS= 0.5 V;

V_OUT= 3.5 V inserted;

t_DGL(RCH)is time to ISET ramp

Deglitch time, recharge threshold

detected in OUT-Detect Mode

t_DGL2(RCH)

BATTERY DETECT ROUTINE – (NOTE: In Hot mode V_O(REG)becomes V_{O_HT(REG)}

)

bq25100/101/bq25100H/101H;

V_O(REG)

V_IN= 5 V; V_TS= 0.5 V, Battery absent

0.450

0.400

0.350

VOUT reduced regulation during

battery detect

V_REG-BD

bq25100A;

V_O(REG)

V_IN= 5 V; V_TS= 0.5 V; Battery absent

0.550

0.500

0.450

I_BD-SINK

Sink current during V_REG-BD

V_IN= 5 V; V_TS= 0.5 V; Battery absent

Regulation time at V_REGor V_REG-

t_{DGL(HI/LOW REG)}

V_O(REG)

0.150

V_O(REG)

0.100

V_O(REG)-

0.050

V_BD-HI

V_BD-LO

High battery detection threshold

Low battery detection threshold

V_IN= 5 V; V_TS= 0.5 V; Battery absent

V_REG-BD

+0.05

V_REG-BD

+0.1

V_REG-BD

+0.15

BATTERY CHARGING TIMERS AND FAULT TIMERS

Restarts when entering pre-charge;

Always enabled when in pre-charge.

t_PRECHG

t_MAXCH

Pre-charge safety timer value

Charge safety timer value

1700

1940

2250

Clears fault or resets at UVLO, TS disable, OUT

Short, exiting LOWV and Refresh

34000

38800

45000

BATTERY-PACK NTC MONITOR (see Note 1); TS pin: 10k NTC

I_NTC-10k

NTC bias current

V_TS= 0.3 V

V_TS= 0 V

48.5

50.5

52.5

μA

10k NTC bias current when

charging is disabled

I_NTC-DIS-10k

INTC is reduced prior to entering

TTDM to keep cold thermistor

from entering TTDM

I_{NTC-FLDBK-10k}

V_TS: Set to 1.525 V

6.5

μA

Termination and timer disable

mode Threshold – Enter

V_TTDM(TS)

V_TS: 0.5 V → 1.7 V; Timer held in reset

1550

1600

1650

V_HYS-TTDM(TS)

V_CLAMP(TS)

Hysteresis exiting TTDM

V_TS: 1.7 V → 0.5 V; Timer enabled

100

TS maximum voltage clamp

V_TS= Open (float)

1900

1950

2000

Deglitch exit TTDM between

states

t_DGL(TTDM)

Deglitch enter TTDM between

states

μs

TS voltage where INTC is reduce INTC adjustment (90 to 10%; 45 to 6.6 uA) takes

V_{TS_I-FLDBK}

to keep thermistor from entering

TTDM

place near this spec threshold;

V_TS: 1.425 V → 1.525 V

1475

C_TS

Optional capacitance – ESD

0.22

μF

Low temp charging to pending;

V_TS: 1 V → 1.5 V

V_TS-0°C

Low temperature CHG pending

1230

775

1255

1280

830

At 0°C;

V_HYS-0°C

V_TS-10°C

V_HYS-10°C

Hysteresis

Charge pending to low temp charging;

V_TS: 1.5 V → 1 V

100

800

Normal charging to low temp charging;

V_TS: 0.5 V → 1 V

Low temperature, half charge

Hysteresis

At 10°C;

Low temp charging to normal CHG;

V_TS: 1 V → 0.5 V

At 4.1V (bq25100/101) or 4.2V (bq25100H/101H);

Normal charging to high temp CHG;

V_TS: 0.5 V → 0.2 V

V_TS-45°C

V_HYS-45°C

V_TS-60°C

V_HYS-60°C

High temperature

Hysteresis

253

160

268

283

180

At 45°C;

High temp charging to normal CHG;

V_TS: 0.2 V → 0.5 V

bq25100/01/100H/101H/100L;

High temp charge to pending;

V_TS: 0.2 V → 0.1 V

High temperature disable

Hysteresis

170

At 60°C (bq25100/01/100H/101H/100L);

Charge pending to high temp CHG;

V_TS: 0.1 V → 0.2 V

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

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Electrical Characteristics (continued)

Over junction temperature range 0°C ≤ T_J≤ 125°C and recommended supply voltage (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

Normal to cold operation; V_TS: 0.6 V → 1 V

Cold to normal operation; V_TS: 1 V → 0.6 V

t_{DGL(TS_10C)}

Deglitch for TS thresholds: 10C

Deglitch for TS thresholds:

0/45/60C

t_DGL(TS)

Battery charging

Charge enable threshold, (10k

NTC)

V_TS-EN-10k

V_{TS-DIS_HYS-10k}

V_TS: 0 V → 0.175 V

V_TS: 0.125 V → 0 V

100

HYS below V_TS-EN-10kto disable,

(10k NTC)

THERMAL REGULATION

T_J(REG)

Temperature regulation limit

125

155

°C

T_J(OFF)

Thermal shutdown temperature

Thermal shutdown hysteresis

T_J(OFF-HYS)

LOGIC LEVELS ON /CHG

V_OL

Output low voltage

Leakage current into IC

I_SINK= 5 mA

V _CHG= 5 V

0.4

I_LEAK

μA

7.6 Typical Characteristics

Setup: Typical Applications Schematic; V_IN= 5 V, V_BAT= 3.6 V (unless otherwise noted)

VIN

VIN 2 V/div

2 V/div

VOUT 2 V/div

VOUT

2 V/div

IOUT 60 mA/div

VISET 1 V/div

t-time – 10 ms/div

t-time – 20 ms/div

No Battery, No Load

Hot Plug

图 3. Power Up Timing

图 4. OVP 7-V Adaptor

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

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Typical Characteristics (接下页)

Setup: Typical Applications Schematic; V_IN= 5 V, V_BAT= 3.6 V (unless otherwise noted)

VIN 2 V/div

VTS 500 mV/div

VOUT 2 V/div

IOUT 60 mA/div

VISET 1 V/div

t-time – 50 ms/div

V_IN0 V -5 V-7 V-5 V

图 5. OVP from Normal Power-Up Operation

图 6. TS Enable and Disable

VIN 1 V/div

VIN 5 V/div

IOUT 60 mA/div

VOUT 2 V/div

IOUT 100 mA/div

VISET 1 V/div

t-time – 5 ms/div

t-time – 20 ms/div

V_INRegulated

图 7. DPM-Adaptor Current Limits

图 8. Hot Plug Source

with No Battery - Battery Detection

VIN 5 V/div

IOUT 100 mA/div

VOUT 2 V/div

VISET 1 V/div

IOUT 100 mA/div

t-time – 20 ms/div

t-time – 200 μs/div

No Load

图 9. Battery Removal

图 10.

ISET Shorted During Normal Operation

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

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Typical Characteristics (接下页)

Setup: Typical Applications Schematic; V_IN= 5 V, V_BAT= 3.6 V (unless otherwise noted)

VIN 5 V/div

VOUT 5 V/div

IOUT 100 mA/div

VISET 1 V/div

IOUT 100 mA/div

VISET 1 V/div

t-time – 10 ms/div

20-Ω resistor at OUT, No input, VBAT = 3.7 V

图 12. Battery Removal

图 11. Battery Plug In

VIN 2 V/div

VISET 2 V/div

VOUT 2 V/div

ILOAD 70 mA/div

IOUT 400 mA/div

VISET 1 V/div

IOUT 70 mA/div

t-time – 10 ms/div

90-mA Load, 120-mA ICHG

图 13. ISET Short Prior to Power Up

图 14. Power Up

4.21

4.202

4.201

4.2

V_REG= 0qC

4.208

4.206

4.204

4.202

4.2

V_REG= 25qC

V_REG= 85qC

V_REG= 125qC

4.199

4.198

4.197

4.196

4.195

4.194

V_REG= 0qC

V_REG= 25qC

V_REG= 85qC

V_REG= 125qC

4.198

4.196

4.194

4.192

4.19

1 mA 10 mA 50 mA 100 mA 150 mA 200 mA 250 mA

Load Current (mA)

4.5 V

5 V

5.5 V

6 V

6.5 V

D001

D002

Input Voltage (V)

图 15. Load Regulation Over Temperature

图 16. Line Regulation Over Temperature

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

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Typical Characteristics (接下页)

Setup: Typical Applications Schematic; V_IN= 5 V, V_BAT= 3.6 V (unless otherwise noted)

6.4

5.6

4.8

112

IOUT (mA)

VOUT (V)

111

110

109

108

107

106

3.2

2.4

1.6

0.8

I_O= 0qC

I_O= 25qC

I_O= 85qC

I_O= 125qC

2.5 V

3 V

3.5 V

4 V

4.1 V

D004

D003

Output Voltage (V)

bq25100 charge cycle, ICHG = 75 mA, VBAT_REG = 4.2 V

图 17. Current Regulation Over Temperature

图 18. Battery Voltage vs Charge Current

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

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8 Detailed Description

8.1 Overview

The bq2510x is a highly integrated family of single cell Li-Ion and Li-Pol chargers. The charger can be used to

charge a battery, power a system or both. The charger has three phases of charging: pre-charge to recover a

fully discharged battery, fast-charge constant current to supply the charge safely and voltage regulation to safely

reach full capacity. The charger is very flexible, allowing programming of the fast-charge current and Pre-

charge/Termination Current. This charger is designed to work with a USB connection (100-mA limit) or Adaptor

(DC output). The charger also checks to see if a battery is present.

The charger also comes with

full set of safety features: JEITA Temperature Standard

(bq25100/01/100H/101H), Over-Voltage Protection, DPM-IN, Safety Timers, and ISET short protection. All of

these features and more are described in detail below.

The charger is designed for a single power path from the input to the output to charge a single cell Li-Ion or

Li-Pol battery pack. Upon application of a 5-V DC power source the ISET and OUT short checks are performed

to assure a proper charge cycle.

If the battery voltage is below the LOWV threshold, the battery is considered discharged and a preconditioning

cycle begins. The amount of precharge current can be programmed using the PRE-TERM pin which programs a

percent of fast charge current (10 to 100%) as the precharge current. This feature is useful when the system load

is connected across the battery “stealing” the battery current. The precharge current can be set higher to account

for the system loading while allowing the battery to be properly conditioned. The PRE-TERM pin is a dual

function pin which sets the precharge current level and the termination threshold level. The termination "current

threshold" is always half of the precharge programmed current level.

Once the battery voltage has charged to the VLOWV threshold, fast charge is initiated and the fast charge

current is applied. The fast charge constant current is programmed using the ISET pin. The constant current

provides the bulk of the charge. Power dissipation in the IC is greatest in fast charge with a lower battery voltage.

If the IC reaches 125°C, the IC enters thermal regulation, slows the timer clock by half, and reduces the charge

current as needed to keep the temperature from rising any further. 图 19 shows the charging profile with thermal

regulation. Typically under normal operating conditions, the IC’s junction temperature is less than 125°C and

thermal regulation is not entered.

Once the cell has charged to the regulation voltage the voltage loop takes control and holds the battery at the

regulation voltage until the current tapers to the termination threshold. The termination can be disabled if desired.

Further details are described in the Operating Modes section.

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

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Overview (接下页)

Thermal

Regulation

Phase

Current

Regulation

Phase

Voltage Regulation and

Charge Termination

Phase

Pre-

Conditioning

Phase

DONE

O(REG)

O(OUT)

Battery Current,

FAST-CHARGE

CURRENT

(OUT)

Battery

Voltage,

(OUT)

Charge

Complete

Status,

Charger

Off

PRE-CHARGE

CURRENT AND

TERMINATION

THRESHOLD

O(LOWV)

(TERM)

O(PRECHG)

(THREG)

Temperature, Tj

DONE

(CHG)

(PRECHG)

图 19. Charging Profile With Thermal Regulation

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

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8.2 Functional Block Diagram

Internal Charge

Current Sense

w/ Multiple Outputs

OUT

Input

Power

80 mV

Detect

OUT

IN-DPM_REF

OUTREG_REF

T_J

Charge

Pump

FAST CHARGE

PRE-CHARGE

1.5V

125ÛC_REF

ISET

PRE-CHG Reference

22mA Startup Current

Limit

Internal Current

Sensing Resistor

Term Reference

T_J

150ÛC_REF

Thermal Shutdown

Charge

Pump

ꢀꢁPA

PRE-TERM

OVP_REF

OUT

V_{TERM_EN}

CHARGE

CONTROL

V_COOL-10ÛC

V_WARM-45ÛC

V_COLD-0ÛC

V_HOT-60ÛC

LO=LDO MODE

V_LDO

HI=CHIP DISABLE

V_DISABLE

Cold Temperature Sink

Current

Disable Sink

Current = 20PA

= 45PA

V_CLAMP=1.4V

5PA

45PA

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

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8.3 Feature Description

8.3.1 Overvoltage-Protection (OVP) – Continuously Monitored

If the input source applies an overvoltage, the pass FET, if previously on, turns off after a deglitch, t_BLK(OVP). The

timer stops counting. Once the overvoltage returns to a normal voltage, the timer and charge continues.

8.3.2 CHG Pin Indication (bq25101, bq25101H)

The charge pin has an internal open drain FET which is on (pulls down to VSS) during the first charge only

(independent of TTDM) and is turned off once the battery reaches voltage regulation and the charge current

tapers to the termination threshold set by the PRE-TERM resistor. The bq25101/01H terminates at 10% of the

programmed charge current. The charge pin is high impedance in sleep mode and OVP and returns to its

previous state once the condition is removed. Cycling input power, removing and replacing the battery, pulling

the TS pin low and releasing or entering pre-charge mode causes the CHG pin to go reset (go low if power is

good and a discharged battery is attached) and is considered the start of a first charge.

8.3.3 CHG Pin LED Pull-up Source (bq25101, bq25101H)

For host monitoring, a pull-up resistor is used between the CHG pin and the VCC of the host and for a visual

indication a resistor in series with an LED is connected between the /CHG pin and a power source. If the CHG

source is capable of exceeding 7 V, a 6.2-V zener should be used to clamp the voltage. If the source is the OUT

pin, note that as the battery changes voltage, and the brightness of the LEDs vary.

8.3.4 IN-DPM (V_IN-DPM or IN-DPM)

The IN-DPM feature is used to detect an input source voltage that is folding back (voltage dropping), reaching its

current limit due to excessive load. When the input voltage drops to the V_IN-DPMthreshold the internal pass FET

starts to reduce the current until there is no further drop in voltage at the input. This would prevent a source with

voltage less than V_IN-DPMto power the out pin. This is an added safety feature that helps protect the source from

excessive loads. This feature is not applicable for bq25100A.

8.3.5 OUT

The Charger’s OUT pin provides current to the battery and to the system, if present. This IC can be used to

charge the battery plus power the system, charge just the battery or just power the system (TTDM) assuming the

loads do not exceed the available current. The OUT pin is a current limited source and is inherently protected

against shorts. If the system load ever exceeds the output programmed current threshold, the output will be

discharged unless there is sufficient capacitance or a charged battery present to supplement the excessive load.

8.3.6 ISET

An external resistor is used to Program the Output Current (10 to 250 mA) and can be used as a current monitor.

R_ISET= K_ISET÷ I_OUT

(1)

Where:

I_OUTis the desired fast charge current;

K_ISETis a gain factor found in the electrical specification

For greater accuracy at lower currents, part of the sense FET is disabled to give better resolution. Going from

higher currents to low currents, there is hysteresis and the transition occurs around 50 mA.

The ISET resistor is short protected and will detect a resistance lower than ≉420 Ω. The detection requires at

least 50 mA of output current. If a “short” is detected, then the IC will latch off and can be reset by cycling the

power or cycling TS pin. The OUT current is internally clamped to a maximum current of 600 mA typical and is

independent of the ISET short detection circuitry.

For charge current that is below 50 mA, an extra RC circuit is recommended on ISET to acheive more stable

current signal. More detail is available in 9.1 Application Information.

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

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Feature Description (接下页)

60C 45C

10C

Programmed VBAT_REG

No Operation

During Cold Fault

Reduced VBAT_REG

Programmed ICHG

(100%)

50%

Cold Fault

0.2

0.4

0.6

0.8

1.0

1.2

VCOLD

1.4

1.6

1.8

Termination

Disable

VHOT VWARM

VCOOL

TS Voltage-V

图 20. Operation Over TS Bias Voltage - bq25100, bq25100H, bq25101, bq25101H

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

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Feature Description (接下页)

45C

10C

Programmed VBAT_REG

No Operation

During Cold Fault

Hot Fault

Charge Disable

Programmed ICHG

(100%)

50%

Cold Fault

0.2

0.4

0.6

0.8

1.0

1.2

VCOLD

1.4

1.6

1.8

Termination

Disable

VHOT VWARM

VCOOL

TS Voltage-V

图 21. Operation Over TS Bias Voltage – bq25100A

8.3.7 PRE_TERM – Pre-Charge and Termination Programmable Threshold

Pre-Term is used to program both the pre-charge current and the termination current threshold. The pre-charge

current level is a factor of two higher than the termination current level. The termination can be set between 5

and 50% (recommended range) of the programmed output current level set by ISET. If left floating the

termination and pre-charge are set internally at 10/20% respectively. The R_PRE-TERMis ranged from 600 Ω to 30

kΩ and the minimum termination current can be programmed to 1 mA. The pre-charge-to-fast-charge, V_lowv

threshold is set to 2.5 V.

R_PRE-TERM= %Term × K_TERM= %Pre-CHG × K_PRE-CHG

(2)

Where:

%Term is the percent of fast charge current where termination occurs;

%Pre-CHG is the percent of fast charge current that is desired during precharge;

K_TERMand K_PRE-CHGare gain factors found in the electrical specifications.

8.3.8 TS

The TS function for the bq2510x family is designed to follow the new JEITA temperature standard

(bq25100/bq25100H/bq25101/bq25101H) for Li-Ion and Li-Pol batteries. There are now four thresholds, 60°C,

45°C, 10°C, and 0°C. Normal operation occurs between 10°C and 45°C. If between 0°C and 10°C the charge

current level is cut in half and if between 45°C and 60°C the regulation voltage is reduced to 4.1 V max for

bq25100 and 4.2 V max for bq25100H, see 图 20. The TS function for the bq25100A cut the charge current level

in half between 0°C and 10°C and disables charging when the NTC temperature is above 45°C.

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

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Feature Description (接下页)

The TS feature is implemented using an internal 50μA current source to bias the thermistor (designed for use

with a 10-k NTC β = 3370 (SEMITEC 103AT-2 or Mitsubishi TH05-3H103F) connected from the TS pin to V_SS. If

this feature is not needed, a fixed 10-k can be placed between TS and V_SSto allow normal operation. This may

be done if the host is monitoring the thermistor and then the host would determine when to pull the TS pin low to

disable charge.

The TS pin has two additional features, when the TS pin is pulled low or floated/driven high. A low disables

charge and a high puts the charger in TTDM.

Above 60°C (45°C for bq25100A) or below 0°C the charge is disabled. Once the thermistor reaches ≉–10°C the

TS current folds back to keep a cold thermistor (between –10°C and –50°C) from placing the IC in the TTDM

mode. If the TS pin is pulled low into disable mode, the current is reduce to ≉30 μA. Since the I_TScurent is fixed

along with the temperature thresholds, it is not possible to use thermistor values other than the 10-k NTC (at

25°C).

8.3.9 Timers

The pre-charge timer is set to 30 minutes. The pre-charge current, can be programmed to off-set any system

load, making sure that the 30 minutes is adequate.

The fast charge timer is fixed at 10 hours and can be increased real time by going into thermal regulation or IN-

DPM. The timer clock slows by a factor of 2, resulting in a clock than counts half as fast when in these modes. If

either the 30 minute or ten hour timer times out, the charging is terminated and for bq25101/1H the CHG pin

goes high impedance if not already in that state. The timer is reset by disabling the IC, cycling power or going

into and out of TTDM.

8.3.10 Termination

Once the OUT pin goes above VRCH, (reaches voltage regulation) and the current tapers down to the

termination threshold, a battery detect route is run to determine if the battery was removed or the battery is full. If

the battery is present, the charge current will terminate. If the battery was removed along with the thermistor,

then the TS pin is driven high and the charge enters TTDM. If the battery was removed and the TS pin is held in

the active region, then the battery detect routine will continue until a battery is inserted. The termination current

can be programmed down to 625 uA, however, the accuracy will reduce acoordingly when the termination

current is below 1 mA.

8.4 Device Functional Modes

8.4.1 Power-Down or Undervoltage Lockout (UVLO)

The bq2510x family is in power down mode if the IN pin voltage is less than UVLO. The part is considered

“dead” and all the pins are high impedance. Once the IN voltage rises above the UVLO threshold the IC will

enter Sleep Mode or Active mode depending on the OUT pin (battery) voltage.

8.4.2 Power-up

The IC is alive after the IN voltage ramps above UVLO (see sleep mode), resets all logic and timers, and starts

to perform many of the continuous monitoring routines. Typically the input voltage quickly rises through the

UVLO and sleep states where the IC declares power good, starts the qualification charge at 22 mA, sets the

charge current base on the ISET pin, and starts the safety timer.

8.4.3 Sleep Mode

If the IN pin voltage is between V_OUT+V_DTand UVLO, the charge current is disabled, the safety timer counting

stops (not reset). As the input voltage rises and the charger exits sleep mode, the safety timer continues to count

and the charge is enabled. See 图 22.

8.4.4 New Charge Cycle

A new charge cycle is started when a good power source is applied, performing a chip disable/enable (TS pin),

exiting Termination and Timer Disable Mode (TTDM), detecting a battery insertion or the OUT voltage dropping

below the VRCH threshold.

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

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Device Functional Modes (接下页)

Apply Input

Power

Is power good?

V_BAT+V_DT<V_IN<V_OVP

&V_UVLO<V_IN

Yes

Is chip enabled?

V_TS>V_EN

Yes

Set Input Current Limit to 22mA

And Start Charge

Perform ISET & OUT short tests

Set charge current

based on ISET setting

Return to

Charge

图 22. bq2510x Power-Up Flow Diagram

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

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Device Functional Modes (接下页)

8.4.5 Termination and Timer Disable Mode (TTDM) - TS Pin High

The battery charger is in TTDM when the TS pin goes high from removing the thermistor (removing battery

pack/floating the TS pin) or by pulling the TS pin up to the TTDM threshold.

When entering TTDM, the 10 hour safety timer is held in reset and termination is disabled. A battery detect

routine is run to see if the battery was removed or not. For bq25101/1H, if the battery was removed then the

CHG pin will go to its high impedance state if not already there. If a battery is detected the CHG pin does not

change states until the current tapers to the termination threshold, where the CHG pin goes to its high

impedance state if not already there (the regulated output will remain on).

The charging profile does not change (still has pre-charge, fast-charge constant current and constant voltage

modes). This implies the battery is still charged safely and the current is allowed to taper to zero.

When coming out of TTDM, the battery detect routine is run and if a battery is detected, then a new charge cycle

begins.

If TTDM is not desired upon removing the battery with the thermistor, one can add a 237-kΩ resistor between TS

and V_SSto disable TTDM. This keeps the current source from driving the TS pin into TTDM. This creates ≉0.1°C

error at hot and a ≉3°C error at cold.

8.4.6 Battery Detect Routine

The battery detect routine should check for a missing battery while keeping the OUT pin at a useable voltage.

The battery detect routine is run when entering and exiting TTDM to verify if battery is present, or run all the time

if battery is missing and not in TTDM. On power-up, if battery voltage is greater than V_RCHthereshold, a battery

detect routine is run to determine if a battery is present.

The battery detect routine is disabled while the IC is in TTDM, or has a TS fault. See 图 23 for the Battery Detect

Flow Diagram.

8.4.7 Refresh Threshold

After termination, if the OUT pin voltage drops to V_RCH(100mV below regulation) then a new charge is initiated.

8.4.8 Starting a Charge on a Full Battery

The termination threshold is raised by ≉14% for the first minute of a charge cycle so if a full battery is removed

and reinserted or a new charge cycle is initiated, that the new charge terminates (less than 1 minute). Batteries

that have relaxed many hours may take several minutes to taper to the termination threshold and terminate

charge.

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

www.ti.com.cn

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

Device Functional Modes (接下页)

Start

BATT_DETECT

Start 25ms timer

Timer Expired?

Yes

Battery Present

Turn off Sink Current

Return to flow

Yes

Is VOUT<VREG-100mV?

Set OUT REG

to VREG-400mV

Enable sink current

Reset & Start 25ms timer

Timer Expired?

Yes

Battery Present

Turn off Sink Current

Return to flow

Is VOUT>VREG-300mV?

Battery Absent

Don’t Signal Charge

Turn off Sink Current

Return to Flow

图 23. Battery Detect Routine

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

www.ti.com.cn

9 Application and Implementation

注

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

9.1 Application Information

The bq2510x series of devices are highly integrated Li-Ion and Li-Pol linear chargers targeted at space-limited

portable applications. The fast charge current can be programmed from 10 mA to 250 mA through an external

resistor on ISET pin. The pre_charge and termination current can also be programmed through the resistor

connected on PRETERM pin. The device has complete system-level protection such as input under-voltage

lockout (UVLO), input over-voltage protection (OVP), sleep mode, thermal regulation, safety timers, and NTC

monitoring input.

9.2 Typical Application - Charger Application Design Example

SYSTEM

USB Port or

Adapter

VBUS

OUT

D+

D-

1ÛF

VSS

PACK+

GND

TEMP

HOST

ISET

2.7k

3.4k

Optional

PRETERM

PACK-

10 nF

bq25100

9.2.1 Design Requirements

•

Supply voltage = 5 V

Fast charge current: I_OUT-FC= 40 mA;

Termination Current Threshold: %_IOUT-FC= 10% of Fast Charge or ~4 mA

Pre-Charge Current by default is twice the termination Current or ~8 mA

TS – Battery Temperature Sense = 10-k NTC (103AT)

/CE is an open drain control pin

9.2.2 Detailed Design Procedures

•

The regulation voltage is set to 4.2 V, the input voltage is 5 V and the charge current is programmed to 40

mA.

For charge current that is below 50 mA, an extra RC circuit is recommended on ISET to acheive more stable

current signal. For applications that need higher charge current, the RC circuit is not needed.

For applications that use more than 200-mA current, there could be a very low level ~1% of charge current

ringing in the output. The ringing can be removed by increasing the input capacitance.

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

www.ti.com.cn

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

Typical Application - Charger Application Design Example (接下页)

9.2.2.1 Calculations

9.2.2.1.1 Program the Fast Charge Current, ISET:

R_ISET= [K_(ISET)/ I_(OUT)

]

from electrical characteristics table. . . K_(SET)= 135 AΩ

R_ISET= [135 AΩ/0.04 A] = 3.4 kΩ

Selecting the closest standard value, use a 3.4-kΩ resistor between ISET and Vss.

9.2.2.1.2 Program the Termination Current Threshold, ITERM:

R_PRE-TERM= K_(TERM)× %_IOUT-FC

R_PRE-TERM= 600 Ω/% × 10% = 6 kΩ

Selecting the closest standard value, use a 6-kΩ resistor between PRETERM and Vss.

One can arrive at the same value by using 20% for a pre-charge value (factor of 2 difference).

R_PRE-TERM= K_(PRE-CHG)× %_IOUT-FC

R_PRE-TERM= 300 Ω/% × 20%= 6 kΩ

9.2.2.1.3 TS Function

Use a 10-k NTC thermistor in the battery pack (103AT).

To Disable the temp sense function, use a fixed 10-kΩ resistor between the TS and VSS.

9.2.2.1.4 Selecting IN and OUT Pin Capacitors

In most applications, all that is needed is a high-frequency decoupling capacitor (ceramic) on the power pin, input

and output pins. Using the values shown on the application diagram is recommended. After evaluation of these

voltage signals with real system operational conditions, one can determine if capacitance values can be adjusted

toward the minimum recommended values (DC load application) or higher values for fast, high amplitude, pulsed

load applications. Note if designed for high input voltage sources (bad adaptors or wrong adaptors), the capacitor

needs to be rated appropriately. Ceramic capacitors are tested to 2x their rated values so a 16-V capacitor may

be adequate for a 30-V transient (verify tested rating with capacitor manufacturer).

9.2.3 bq25100 Application Performance Plots

VIN

VIN 2 V/div

2 V/div

VOUT 2 V/div

IOUT 60 mA/div

VISET 1 V/div

t-time – 20 ms/div

t-time – 50 ms/div

Hot Plug

V_IN0 V -5 V-7 V-5 V

图 24. OVP 7-V Adaptor

图 25. OVP from Normal Power-Up Operation

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

www.ti.com.cn

Typical Application - Charger Application Design Example (接下页)

VIN 2 V/div

VTS 500 mV/div

VISET 2 V/div

ILOAD 70 mA/div

IOUT 60 mA/div

VISET 1 V/div

IOUT 70 mA/div

t-time – 50 ms/div

t-time – 10 ms/div

90-mA Load, 120-mA IOUT

图 26. TS Enable and Disable

图 27. Power Up

10 Power Supply Recommendations

10.1 Leakage Current Effects on Battery Capacity

To determine how fast a leakage current on the battery will discharge the battery is an easy calculation. The time

from full to discharge can be calculated by dividing the Amp-Hour Capacity of the battery by the leakage current.

For a 0.1-AHr battery and a 75-nA leakage current (100mAHr/75nA = 250000 Hours), it would take 1333k hours

or 152 years to discharge. In reality the self discharge of the cell would be much faster so the 75-nA leakage

would be considered negligible.

11 Layout

11.1 Layout Guidelines

To obtain optimal performance, the decoupling capacitor from IN to GND and the output filter capacitors from

OUT to GND should be placed as close as possible to the bq2510x, with short trace runs to both IN, OUT and

GND.

•

All low-current GND connections should be kept separate from the high-current charge or discharge paths

from the battery. Use a single-point ground technique incorporating both the small signal ground path and the

power ground path.

•

The high current charge paths into IN pin and from the OUT pin must be sized appropriately for the maximum

charge current in order to avoid voltage drops in these traces

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

www.ti.com.cn

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

11.2 Layout Example

图 28. Board Layout

11.3 Thermal Package

The most common measure of package thermal performance is thermal impedance (θ_JA) measured (or

modeled) from the chip junction to the air surrounding the package surface (ambient). The mathematical

expression for θ_JAis:

θ_JA= (T_J– T) / P

(3)

Where:

T_J= chip junction temperature

T = ambient temperature

P = device power dissipation

Factors that can influence the measurement and calculation of θ_JAinclude:

1. Whether or not the device is board mounted

2. Trace size, composition, thickness, and geometry

3. Orientation of the device (horizontal or vertical)

4. Volume of the ambient air surrounding the device under test and airflow

5. Whether other surfaces are in close proximity to the device being tested

Due to the charge profile of Li-Ion and Li-Pol batteries the maximum power dissipation is typically seen at the

beginning of the charge cycle when the battery voltage is at its lowest. Typically after fast charge begins the pack

voltage increases to ≉3.4 V within the first 2 minutes. The thermal time constant of the assembly typically takes a

few minutes to heat up so when doing maximum power dissipation calculations, 3.4 V is a good minimum voltage

to use.

The device power dissipation, P, is a function of the charge rate and the voltage drop across the internal

PowerFET. It can be calculated from the following equation when a battery pack is being charged :

P = [V_(IN)– V_(OUT)] × I_(OUT)

(4)

bq25100, bq25101, bq25100A, bq25100H, bq25101H, bq25100L

ZHCSDZ5C –AUGUST 2014–REVISED NOVEMBER 2014

www.ti.com.cn

Thermal Package (接下页)

The thermal loop feature reduces the charge current to limit excessive IC junction temperature. It is

recommended that the design not run in thermal regulation for typical operating conditions (nominal input voltage

and nominal ambient temperatures) and use the feature for non typical situations such as hot environments or

higher than normal input source voltage. With that said, the IC will still perform as described, if the thermal loop

is always active.

12 器件和文档支持

12.1 器件支持

12.1.1 第三方产品免责声明

TI 发布的与第三方产品或服务有关的信息，不能构成与此类产品或服务或保修的适用性有关的认可，不能构成此类

产品或服务单独或与任何 TI 产品或服务一起的表示或认可。

12.2 相关链接

以下表格列出了快速访问链接。范围包括技术文档、支持与社区资源、工具和软件，并且可以快速访问样片或购买

链接。

表 1. 相关链接

器件

产品文件夹

请单击此处

样片与购买

请单击此处

技术文档

请单击此处

工具与软件

请单击此处

支持与社区

请单击此处

bq25100

bq25101

bq25100A

bq25100H

bq25101H

bq25100L

12.3 商标

Bluetooth is a registered trademark of Bluetooth SIG, Inc..

12.4 静电放电警告

这些装置包含有限的内置 ESD 保护。存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损

伤。

12.5 术语表

SLYZ022 — TI 术语表。

这份术语表列出并解释术语、首字母缩略词和定义。

13 机械、封装和可订购信息

以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不

对本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本，请查阅左侧的导航栏。

PACKAGE OPTION ADDENDUM

www.ti.com

10-Dec-2020

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

BQ25100AYFPR

BQ25100AYFPT

BQ25100HYFPR

BQ25100HYFPT

BQ25100YFPR

BQ25100YFPT

BQ25101HYFPR

BQ25101HYFPT

BQ25101YFPR

BQ25101YFPT

ACTIVE

DSBGA

YFP

3000 RoHS & Green

250 RoHS & Green

3000 RoHS & Green

250 RoHS & Green

3000 RoHS & Green

250 RoHS & Green

3000 RoHS & Green

250 RoHS & Green

3000 RoHS & Green

250 RoHS & Green

SNAGCU

Level-1-260C-UNLIM

-40 to 85

0 to 125

25100A

SNAGCU

25100A

25100H

25100

25101H

25101

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

10-Dec-2020

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

7-Feb-2023

TAPE AND REEL INFORMATION

REEL DIMENSIONS

TAPE DIMENSIONS

Reel

Diameter

Cavity

A0 Dimension designed to accommodate the component width

B0 Dimension designed to accommodate the component length

K0 Dimension designed to accommodate the component thickness

Overall width of the carrier tape

P1 Pitch between successive cavity centers

Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Sprocket Holes

Q1 Q2

Q3 Q4

Q1 Q2

Q3 Q4

User Direction of Feed

Pocket Quadrants

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

BQ25100AYFPR

BQ25100AYFPT

BQ25100HYFPR

BQ25100HYFPT

BQ25100YFPR

BQ25100YFPT

BQ25101HYFPR

BQ25101HYFPT

BQ25101YFPR

BQ25101YFPT

DSBGA

YFP

3000

250

180.0

8.4

0.98

1.68

0.59

4.0

8.0

3000

250

3000

250

3000

250

3000

250

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

7-Feb-2023

TAPE AND REEL BOX DIMENSIONS

Width (mm)

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

BQ25100AYFPR

BQ25100AYFPT

BQ25100HYFPR

BQ25100HYFPT

BQ25100YFPR

BQ25100YFPT

BQ25101HYFPR

BQ25101HYFPT

BQ25101YFPR

BQ25101YFPT

DSBGA

YFP

3000

250

182.0

20.0

3000

250

3000

250

3000

250

3000

250

Pack Materials-Page 2

PACKAGE OUTLINE

YFP0006

DSBGA - 0.5 mm max height

DIE SIZE BALL GRID ARRAY

BALL A1

CORNER

0.5 MAX

SEATING PLANE

0.05 C

0.19

0.13

BALL TYP

0.4

TYP

SYMM

D: Max = 1.608 mm, Min =1.547 mm

E: Max = 0.91 mm, Min = 0.85 mm

0.8

SYMM

TYP

0.4 TYP

0.25

0.21

C A B

0.015

4223410/A 11/2016

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

www.ti.com

EXAMPLE BOARD LAYOUT

YFP0006

DSBGA - 0.5 mm max height

DIE SIZE BALL GRID ARRAY

(0.4) TYP

6X ( 0.23)

(0.4) TYP

SYMM

LAND PATTERN EXAMPLE

SCALE:50X

0.05 MAX

0.05 MIN

METAL UNDER

SOLDER MASK

(

0.23)

METAL

(

0.23)

SOLDER MASK

OPENING

SOLDER MASK

OPENING

NON-SOLDER MASK

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

NOT TO SCALE

4223410/A 11/2016

NOTES: (continued)

3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.

For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).

www.ti.com

EXAMPLE STENCIL DESIGN

YFP0006

DSBGA - 0.5 mm max height

DIE SIZE BALL GRID ARRAY

(0.4) TYP

(R0.05) TYP

6X ( 0.25)

(0.4) TYP

SYMM

METAL

TYP

SYMM

SOLDER PASTE EXAMPLE

BASED ON 0.1 mm THICK STENCIL

SCALE:50X

4223410/A 11/2016

NOTES: (continued)

4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.

www.ti.com

重要声明和免责声明

TI“按原样”提供技术和可靠性数据（包括数据表）、设计资源（包括参考设计）、应用或其他设计建议、网络工具、安全信息和其他资源，

不保证没有瑕疵且不做出任何明示或暗示的担保，包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担

保。

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证并测试您的应用，(3) 确保您的应用满足相应标准以及任何其他功能安全、信息安全、监管或其他要求。

这些资源如有变更，恕不另行通知。TI 授权您仅可将这些资源用于研发本资源所述的 TI 产品的应用。严禁对这些资源进行其他复制或展示。

您无权使用任何其他 TI 知识产权或任何第三方知识产权。您应全额赔偿因在这些资源的使用中对 TI 及其代表造成的任何索赔、损害、成

本、损失和债务，TI 对此概不负责。

TI 提供的产品受 TI 的销售条款或 ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI 提供这些资源并不会扩展或以其他方式更改

TI 针对 TI 产品发布的适用的担保或担保免责声明。

TI 反对并拒绝您可能提出的任何其他或不同的条款。IMPORTANT NOTICE

邮寄地址：Texas Instruments, Post Office Box 655303, Dallas, Texas 75265

BQ25101HYFPT [TI]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E