BQ25730 [TI]
具有电源路径和 USB-C™ PD OTG 的 I2C 1 至 5 节电池 NVDC 降压/升压电池充电控制器;型号: | BQ25730 |
厂家: | TEXAS INSTRUMENTS |
描述: | 具有电源路径和 USB-C™ PD OTG 的 I2C 1 至 5 节电池 NVDC 降压/升压电池充电控制器 电池 控制器 光电二极管 |
文件: | 总109页 (文件大小:3201K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BQ25730
SLUSE65 – FEBRUARY 2021
BQ25730 I2C 1- to 5-Cell Buck-Boost Narrow VDC Battery Charge Controller with
Power Path Control and USB-C PD 3.0 OTG Output
– Thermal shutdown
1 Features
– Input, system, battery overvoltage protection
•
Power path control through battery MOSFET
implementing independent system voltage instant-
on with no battery or depleted battery
400-kHz/800-kHz programmable switching
frequency for high efficiency/high power density
Buck-boost narrow voltage DC (NVDC) charger for
USB-C Power Delivery (PD) interface platform
– 3.5-V to 26-V input range to charge 1- to 5-cell
battery
– Charge current up to 16.2 A/8.1 A with 128-
mA/64-mA resolution based on 5-mΩ/10-mΩ
sensing resistor
– Input current limit up to 10 A/6.35 A with 100-
mA/50-mA resolution based on 5-mΩ/10-mΩ
sensing resistor
– Support USB 2.0, USB 3.0, USB 3.1 and USB
Power Delivery (PD)
– Input Current Optimizer (ICO) to extract max
input power without overloading the adapter
– Seamless transition between buck, buck-boost,
and boost operations
– Input current and voltage regulation (IINDPM
and VINDPM) against source overload
TI patented switching frequency dithering pattern
for EMI noise reduction
– Input, MOSFET, inductor overcurrent protection
Package: 32-Pin 4.0 mm × 4.0 mm WQFN
•
2 Applications
•
•
•
•
Oxygen concentrator, ventilators,vacuum robot
Tablet (multimedia), wireless speaker
3 Description
The BQ25730 is a synchronous NVDC buck-boost
battery charge controller to charge a 1- to 5-cell
battery from a wide range of input sources including
USB adapter, high voltage USB-C Power Delivery
(PD) sources, and traditional adapters. It offers a low
component count, high efficiency solution for space
constrained, 1- to 5-cell battery charging applications.
The Narrow VDC buck-boost architecture avoid direct
power path from input source to system voltage
which implements wide input voltage range and
narrow system voltage range at same time. Narrow
system voltage range is valuable for faster battery
supplement and lower MOSFET rating for next stage
converter.
Device Information
•
•
PART NUMBER
PACKAGE(1)
BODY SIZE (NOM)
BQ25730
WQFN (32) 4.00 mm × 4.00 mm
TI patented Pass Through Mode (PTM) for system
power efficiency improvement and battery fast
charging achieving 99% efficiency.
Input and battery current monitor through
dedicated pins
Integrated 8-bit ADC to monitor voltage, current
and power
Battery MOSFET ideal diode operation in
supplement mode to support system when adapter
is fully loaded
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
•
•
•
VSYS
Q2
Q3
Q1
Q4
VBUS
3.5V-26V
HIDRV1 LODRV1 SW1
SW2 LODRV2 HIDRV2
VBUS
ACN
SYS
/BATDRV
BQ25730
SRP
SRN
ACP
•
Power up USB port from battery (USB OTG)
– 3-V to 24-V OTG with 8-mV resolution
– Output current limit up to 12.7 A/6.35 A with
100-mA/50-mA resolution based on 5-mΩ/10-
mΩ sensing resistor
Host (I2C)
•
•
I2C host control interface for flexible system
configuration
Application Diagram
High accuracy for the regulation and monitor
– ±0.5% Charge voltage regulation
– ±3% Charge current regulation
– ±2.5% Input current regulation
– ±2% Input/charge current monitor
Safety
•
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
BQ25730
SLUSE65 – FEBRUARY 2021
www.ti.com
Table of Contents
1 Features............................................................................1
2 Applications.....................................................................1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Description (continued).................................................. 3
6 Device Comparison Table...............................................4
7 Pin Configuration and Functions...................................5
8 Specifications.................................................................. 8
8.1 Absolute Maximum Ratings........................................ 8
8.2 ESD Ratings............................................................... 8
8.3 Recommended Operating Conditions.........................8
8.4 Thermal Information....................................................9
8.5 Electrical Characteristics(BQ25730)...........................9
8.6 Timing Requirements................................................19
8.7 Typical Characteristics..............................................21
9 Detailed Description......................................................25
9.1 Overview...................................................................25
9.2 Functional Block Diagram.........................................26
9.3 Feature Description...................................................27
9.4 Device Functional Modes..........................................38
9.5 Programming............................................................ 39
9.6 Register Map.............................................................43
10 Application and Implementation................................87
10.1 Application Information........................................... 87
10.2 Typical Application.................................................. 87
11 Power Supply Recommendations..............................97
12 Layout...........................................................................98
12.1 Layout Guidelines................................................... 98
12.2 Layout Example...................................................... 99
13 Device and Documentation Support........................101
13.1 Device Support..................................................... 101
13.2 Documentation Support........................................ 101
13.3 Support Resources............................................... 101
13.4 Trademarks...........................................................101
13.5 Electrostatic Discharge Caution............................101
13.6 Glossary................................................................101
14 Mechanical, Packaging, and Orderable
Information.................................................................. 102
4 Revision History
DATE
REVISION
NOTES
February 2021
*
Initial release.
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5 Description (continued)
The NVDC configuration allows the system to be regulated based on battery voltage, but not drop below system
minimum voltage. The system keeps operating even when the battery is completely discharged or removed.
When load power exceeds input source rating, the battery goes into supplement mode and prevents the system
from crashing.
During power up, the charger sets the converter to a buck, boost, or buck-boost configuration based on the input
source and battery conditions. The charger seamlessly transitions between the buck, boost, and buck-boost
operation modes without host control.
In the absence of an input source, the BQ25730 supports the USB On-the-Go (OTG) function from a 1- to 5-cell
battery to generate an adjustable 3-V to 24-V output on VBUS with 8-mV resolution. The OTG output voltage
transition slew rate can be configured to comply with the USB-PD 3.0 PPS specification.
The latest version of the USB-C PD specification includes Fast Role Swap (FRS) to ensure power role swapping
occurs in a timely fashion so that the device(s) connected to the dock can avoid experiencing momentary power
loss or glitching. This device integrates FRS in compliance with the PD specification.
TI patented switching frequency dithering pattern can significantly reduce EMI noise over the whole conductive
EMI frequency range (150 kHz to 30 MHz). Multiple dithering scale options are available to provide flexibility for
different applications to simplify EMI noise filter design.
The charger can be operated in the TI patented Pass Through Mode (PTM) to improve efficiency over the full
load range. In PTM, input power is directly passed through the charger to the system. Switching losses of the
MOSFETs and inductor core loss can be saved for high efficiency operation.
The BQ25730 is available in a 32-pin 4 mm × 4 mm WQFN package.
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6 Device Comparison Table
BQ25710
SMBus
09h
BQ25713
I2C
BQ25792
I2C
BQ25730
I2C
BQ25731
Interface
I2C
Device Address
6Bh
6Bh
6Bh
6Bh
Integrated
MOSFET
Integrated MOSFET/Controller
Controller
Controller
Controller
Controller
Maximum Charge Current
Switching Frequency (Hz)
Cell Count
8.128 A
800 k/1.2 M
1s to 4s
8.128 A
800 k/1.2 M
1s to 4s
5 A
750 k/1.5 M
1s to 4s
Integrated
NA
16.256 A
400 k/800 k
1s to 5s
16.256 A
400 k/800 k
1s to 5s
Input Current Sense Resistor
Independent Comparator Latch
10 mΩ/20 mΩ
Non Latch
10 mΩ/20 mΩ
5 mΩ/10 mΩ
5 mΩ/10 mΩ
Latch/Non latch
(default)
Latch/Non latch
(default)
Non Latch
2.4 V
2.2 V
2.4 V ~ 8.0 V
(0.8-V step size)
Default: 2.4 V
1.6 V
VSYS_UVP
2.4 V
OTG Voltage Range
Frequency Dithering
BATFET Power Path
Pre-charge LDO Mode
3.0 V to 20.8 V
3.0 V to 20.8 V
2.8 V to 22 V
3.0 V to 24 V
3.0 V to 24 V
No
Yes
Yes
No
Yes
Yes
No
Yes
Yes
Yes
Yes
Yes
Yes
No
No
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7 Pin Configuration and Functions
VBUS
ACN
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
HIDRV2
SW2
ACP
VSYS
BATDRV
SRP
CHRG_OK
OTG/VAP/FRS
ILIM_HIZ
VDDA
Thermal
Pad
SRN
CELL_BATPRESZ
COMP2
IADPT
Figure 7-1. RSN Package 32-Pin WQFN Top View
Table 7-1. Pin Functions
PIN
I/O
DESCRIPTION
NAME
NUMBER
Input current sense amplifier negative input. The leakage on ACP and ACN are matched. A
RC low-pass filter is required to be placed between the sense resistor and the ACN pin to
suppress the high frequency noise in the input current signal. Refer to Section 10.2.2.2 for
ACP/ACN filter design.
ACN
ACP
2
PWR
Input current sense amplifier positive input. The leakage on ACP and ACN are matched. A
RC low-pass filter is required to be placed between the sense resistor and the ACP pin to
suppress the high frequency noise in the input current signal. Refer to Section 10.2.2.2 for
ACP/ACN filter design.
3
PWR
O
P-channel battery FET (BATFET) gate driver output. It is shorted to VSYS to turn off the
BATFET. It goes 10 V below VSYS to fully turn on BATFET. BATFET is in linear mode to
regulate VSYS at minimum system voltage when battery is depleted. BATFET is fully on
during fast charge and works as an ideal-diode in supplement mode.
BATDRV
21
Buck mode high-side power MOSFET driver power supply. Connect a 0.047-µF capacitor
between SW1 and BTST1. The bootstrap diode between REGN and BTST1 is integrated.
BTST1
BTST2
30
25
PWR
PWR
Boost mode high-side power MOSFET driver power supply. Connect a 0.047-μF capacitor
between SW2 and BTST2. The bootstrap diode between REGN and BTST2 is integrated.
Battery cell selection pin for 1- to 5- cell battery setting. CELL_BATPRESZ pin is biased
from VDDA through a resistor divider. CELL_BATPRESZ pin also sets SYSOVP thresholds
to 5 V for 1-cell, 12 V for 2-cell and 19.5 V for 3-cell/4-cell. CELL_BATPRESZ pin is
pulled below VCELL_BATPRESZ_FALL to indicate battery removal. After battery is removed the
charge voltage register REG0x05/04h() goes back to default. No external cap is allowed
at CELL_BATPRESZ pin. The device exits LEARN mode and disables charge when
CELL_BATPRESZ pin is pulled low (upon battery removal).
CELL_BATPRESZ
18
I
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Table 7-1. Pin Functions (continued)
PIN
I/O
DESCRIPTION
NAME
NUMBER
Open drain active high indicator to inform the system good power source is connected to
the charger input. Connect to the pullup rail via 10-kΩ resistor. When VBUS rises above 3.5
V and falls below 25.8 V, CHRG_OK is HIGH after 50-ms deglitch time. When VBUS falls
below 3.2 V or rises above 26.8 V, CHRG_OK is LOW. When one of SYSOVP, SYSUVP,
ACOC, TSHUT, BATOVP, BATOC or force converter off faults occurs, CHRG_OK is asserted
LOW.
CHRG_OK
4
O
Input of independent comparator. The independent comparator compares the voltage
sensed on CMPIN pin with internal reference, and its output is on CMPOUT pin. Internal
reference, output polarity and deglitch time is selectable by the I2C host. With polarity HIGH
(CMP_POL = 1b), place a resistor between CMPIN and CMPOUT to program hysteresis.
With polarity LOW (CMP_POL = 0b), the internal hysteresis is 100 mV. If the independent
comparator is not in use, tie CMPIN to ground.
CMPIN
14
15
I
Open-drain output of independent comparator. Place a pullup resistor from CMPOUT to
pullup supply rail. Internal reference, output polarity and deglitch time are selectable by the
I2C host. If the independent comparator is not in use, float CMPOUT pin.
CMPOUT
O
Buck boost converter compensation pin 2. Refer to Section 9.3.12 for COMP2 pin RC
network.
COMP2
COMP1
17
16
I
I
Buck boost converter compensation pin 1. Refer to Section 9.3.12 for COMP1 pin RC
network.
Active HIGH to enable OTG or FRS modes. 1) When OTG_VAP_MODE=1b and
EN_OTG=1b, pulling high this pin can enable OTG mode. 2) When OTG_VAP_MODE=1b
and EN_FRS=1b, pulling high this pin can enable FRS mode in forward operation.
OTG/VAP/FRS
5
I
Buck mode high-side power MOSFET (Q1) driver. Connect to high-side n-channel MOSFET
gate.
HIDRV1
HIDRV2
31
24
O
O
Boost mode high-side power MOSFET(Q4) driver. Connect to high-side n-channel MOSFET
gate.
The adapter current monitoring output pin. VIADPT = 20 or 40 × (VACP – VACN) with ratio
selectable through IADPT_GAIN bit. This pin is also used to program the inductance used in
the application. Refer to Section 9.3.11 for selecting resistor from the IADPT pin to ground .
For a 4.7-µH inductance, the resistor is 191-kΩ or 187-kΩ standard value. Place a 100-pF
or less ceramic decoupling capacitor from IADPT pin to ground. IADPT output voltage is
clamped below 3.3 V.
IADPT
IBAT
8
9
O
O
The battery current monitoring output pin. VIBAT = 8 or 16 × (VSRP – VSRN) for charge
current, or VIBAT = 8 or 16 × (VSRN – VSRP) for discharge current, with ratio selectable
through IBAT_GAIN bit. Place a 100-pF or less ceramic decoupling capacitor from IBAT pin
to ground. This pin can be floating if not in use. Its output voltage is clamped below 3.3 V.
Input current limit setting pin. Program ILIM_HIZ voltage by connecting a resistor divider
from VDDA rail to ground. The pin voltage is calculated as: V(ILIM_HIZ) = 1 V + 40 × IDPM ×
Rac, in which IDPM is the target input current limit.
When EN_EXTILIM = 1b the input current limit used by the charger is the lower setting of
ILIM_HIZ pin and IIN_HOST register. When EN_EXTILIM = 0b input current limit is only
determined by IIN_HOST register.
When the pin voltage is below 0.4 V, the device enters high impedance (HIZ) mode with
low quiescent current. When the pin voltage is above 0.8 V, the device is out of HIZ mode.
The ILIM_HIZ pin voltage is continuous read and used for updating current limit setting (If
EN_EXTILIM=1b ), this allows dynamic change input current limit setting by adjusting this pin
voltage.
ILIM_HIZ
LODRV1
6
I
Buck mode low side power MOSFET (Q2) driver. Connect to low side n-channel MOSFET
gate.
29
O
Boost mode low side power MOSFET (Q3) driver. Connect to low side n-channel MOSFET
gate.
LODRV2
PGND
26
27
O
GND
Device power ground.
Active low open drain output indicator. It monitors adapter input current, battery discharge
current, and system voltage. After any event in the PROCHOT profile is triggered, a pulse is
asserted. The minimum pulse width is adjustable through PROCHOT_WIDTH bits.
PROCHOT
11
O
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Table 7-1. Pin Functions (continued)
PIN
I/O
DESCRIPTION
NAME
NUMBER
Current mode system power monitor. The output current is proportional to the total power
from the adapter and the battery. The gain is selectable through I2C. Place a resistor from
PSYS to ground to generate output voltage. This pin can be floating if not in use. Its output
voltage is clamped at 3.3 V. Place a capacitor in parallel with the resistor for filtering.
PSYS
REGN
10
O
6-V linear regulator output supplied from VBUS or VSYS. The LDO is active when VBUS
above VVBUS_CONVEN. Connect a 2.2- or 3.3-μF ceramic capacitor from REGN to power
ground. REGN pin output is for power stage gate drive.
28
PWR
I2C clock input. Connect to clock line from the host controller or smart battery. Connect a
10-kΩ pullup resistor according to specifications.
SCL
SDA
13
12
I
I2C open-drain data I/O. Connect to data line from the host controller or smart battery.
Connect a 10-kΩ pullup resistor according to I2C specifications.
I/O
Charge current sense amplifier negative input. SRN pin is for battery voltage sensing as
well. Connect a 0.1-μF filter cap cross battery charging sensing resistor and use 10-Ω
contact resistor between SRN pin and battery charging sensing resistor. The leakage current
on SRP and SRN are matched.
SRN
SRP
19
20
PWR
PWR
Charge current sense amplifier positive input. Connect a 0.1-μF filter cap cross battery
charging sensing resistor and use 10-Ω contact resistor between SRP pin and battery
charging sensing resistor. The leakage current on SRP and SRN are matched.
Buck mode switching node. Connect to the source of the buck half bridge high side n-
channel MOSFET.
SW1
32
23
1
PWR
PWR
PWR
PWR
Boost mode switching node. Connect to the source of the boost half bridge high side
n-channel MOSFET.
SW2
Charger input voltage. An input low pass filter of 1 Ω and 0.47 µF (minimum) is
recommended.
VBUS
VDDA
Internal reference bias pin. Connect a 10-Ω resistor from REGN to VDDA and a 1-μF
ceramic capacitor from VDDA to power ground.
7
Charger system voltage sensing. The system voltage regulation maximum limit is
programmed in ChargeVoltage register plus 150 mV and regulation minimum limit is
programmed in VSYS_MIN register.
VSYS
22
–
PWR
–
Exposed pad beneath the IC. Always solder thermal pad to the board, and have vias on
the thermal pad plane connecting to power ground planes. It serves as a thermal pad to
dissipate the heat.
Thermal pad
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8 Specifications
8.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–2
MAX
32
32
38
7
UNIT
SRN, SRP, ACN, ACP, VBUS, VSYS
SW1, SW2
BTST1, BTST2, HIDRV1, HIDRV2, BATDRV
LODRV1, LODRV2 (25nS)
HIDRV1, HIDRV2 (25nS)
–0.3
–4
–4
38
32
Voltage
V
SW1, SW2 (25nS)
–4
SDA, SCL, REGN, PSYS, CHRG_OK, CELL_BATPRESZ, ILIM_HIZ,
LODRV1, LODRV2, VDDA, COMP2, CMPIN, CMPOUT,OTG/VAP/
FRS,
–0.3
7
PROCHOT
–0.3
–0.3
–0.3
–0.5
–40
5.5
3.6
7
IADPT, IBAT, COMP1
BTST1-SW1, BTST2-SW2, HIDRV1-SW1, HIDRV2-SW2
SRP-SRN, ACP-ACN
Differential
Voltage
V
0.5
150
150
Temperature
Temperature
Junction temperature range, TJ
Storage temperature, Tstg
°C
–55
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated
under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
8.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001, all pins(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC
specification JESD22-C101, all pins(2)
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
8.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
0
NOM
MAX
26
UNIT
ACN, ACP, VBUS
SRN, SRP, VSYS
0
23.15
26
SW1, SW2
–2
0
BTST1, BTST2, HIDRV1, HIDRV2, BATDRV
32
Voltage
V
SDA, SCL, REGN, PSYS, CHRG_OK, CELL_BATPRESZ, ILIM_HIZ,
LODRV1, LODRV2, VDDA, COMP2, CMPIN, CMPOUT,OTG/VAP/FRS
0
6.5
PROCHOT
0
0
5.3
3.3
IADPT, IBAT, COMP1
BTST1-SW1, BTST2-SW2, HIDRV1-SW1, HIDRV2-SW2
SRP-SRN, ACP-ACN
0
6.5
Differential
Voltage
–0.5
0
0.5
V
BATDRV-VSYS
10.8
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8.3 Recommended Operating Conditions (continued)
over operating free-air temperature range (unless otherwise noted)
MIN
–20
–20
NOM
MAX
125
85
UNIT
Junction temperature range, TJ
Temperature
°C
Storage temperature, Tstg
8.4 Thermal Information
BQ25730
THERMAL METRIC(1)
RSN (WQFN)
UNIT
32 PINS
37.2
26.1
7.8
RθJA
Junction-to-ambient thermal resistance (JEDEC(1)
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
)
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
ΨJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
0.3
ΨJB
7.8
RθJC(bot)
2.3
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
8.5 Electrical Characteristics(BQ25730)
VVBUS_UVLOZ < VVBUS < VVBUSOV_FALL , TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER
Input voltage
operating range
TEST CONDITIONS
MIN
TYP
MAX UNIT
VINPUT_OP
3.5
26
V
MAX SYSTEM VOLTAGE REGULATION
System Voltage
Regulation, measured
on VSYS (charge
disabled)
VSYSMAX_RNG
1.024
–2%
23.15
V
V
System voltage
regulation accuracy
(charge disabled and
OOA disabled)
VSRN
150 mV
+
VSYSMAX_ACC
REG0x05/04() = 0x5208H (21.000 V)
2%
VSRN
150 mV
+
V
V
V
V
REG0x05/04() = 0x41A0H (16.800 V)
REG0x05/04() = 0x3138H (12.600 V)
REG0x05/04() = 0x20D0H (8.400 V)
REG0x05/04() = 0x1068H (4.200 V)
–2%
–2%
–3%
–3%
1.00
2%
2%
VSRN
150 mV
+
System voltage
regulation accuracy
VSYSMAX_ACC
(charge disabled and
VSRN
150 mV
+
EN_OOA=0b)
3%
VSRN
150 mV
+
3%
MINIMUM SYSTEM VOLTAGE REGULATION
System Voltage
Regulation, measured
on VSYS
VSYS_MIN_RNG
23.00
V
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8.5 Electrical Characteristics(BQ25730) (continued)
VVBUS_UVLOZ < VVBUS < VVBUSOV_FALL , TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Minimum System
15.40
V
Voltage Regulation
Accuracy (VBAT
below REG0x3E()
setting,OOA disabled)
VSYS_MIN_REG_ACC
REG0x0D/0C() = 0x9A00H
–2%
–2%
12.30
9.20
6.60
3.60
V
–2%
V
REG0x0D/0C() = 0x7B00H
REG0x0D/0C() = 0x5C00H
REG0x0D/0C() = 0x4200H
REG0x0D/0C() = 0x2400H
–2%
–2%
–3%
–3%
Minimum System
Voltage Regulation
Accuracy (VBAT
below REG0x0D/0C()
setting, EN_OOA=0b)
–2%
V
VSYS_MIN_REG_ACC
–3%
V
–3%
CHARGE VOLTAGE REGULATION
Battery voltage
VBAT_RNG
regulation
1.024
23.00
0.5%
V
V
Battery voltage
regulation accuracy
(0°C to 85°C)
21
VBAT_REG_ACC
REG0x05/04() = 0x5208H
–0.5%
16.8
12.6
8.4
V
V
V
V
REG0x05/04() = 0x41A0H
REG0x05/04() = 0x3138H
REG0x05/04() = 0x20D0H
REG0x05/04() = 0x1068H
–0.5%
–0.5%
–0.6%
–1.1%
0.5%
0.5%
Battery voltage
regulation accuracy
(0°C to 85°C)
VBAT_REG_ACC
0.6%
4.2
1.45%
CHARGE CURRENT REGULATION IN FAST CHARGE
Charge current
VIREG_CHG_RNG
regulation differential VIREG_CHG = VSRP – VSRN
0
81.28 mV
voltage range
8192
4096
2048
1024
mA
3.0%
REG0x03/02() = 0x1000H
REG0x03/02() = 0x0800H
REG0x03/02() = 0x0400H
REG0x03/02() = 0x0200H
–3.0%
–5.0%
–12%
–18%
Charge current
mA
regulation accuracy
5-mΩ RSR sensing
resistor, VBAT above
VSYS_MIN(Reg0x0D
/0C)setting(0°C to
85°C)
6.0%
ICHRG_REG_ACC
mA
13.5%
mA
21.5%
CHARGE CURRENT REGULATION IN LDO MODE
CELL(≥2 S),VSRN < VSYS_MIN
384
384
2
mA
mA
A
Pre-charge current
clamp under low
battery voltage
ICLAMP
CELL 1 S, VSRN < 3 V
CELL 1 S, 3 V < VSRN < VSYS_MIN
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8.5 Electrical Characteristics(BQ25730) (continued)
VVBUS_UVLOZ < VVBUS < VVBUSOV_FALL , TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
REG0x03/02() = 0x00C0H
384
mA
Pre-charge current
regulation accuracy
with 5-mΩ RSR
resistor, VBAT
below REG0x0D/0C()
setting (0°C to 85°C)
≥2S
–25.0%
–50.0%
25.0%
50.0%
mA
IPRECHRG_REG_ACC
1S
REG0x03/02() = 0x0080H
≥2S
256
–30.0%
–13.5
30.0%
SRP, SRN leakage
current mismatch
(0°C to 85°C)
ILEAK_SRP_SRN
10.0 µA
INPUT CURRENT REGULATION
Input current
regulation differential
VIREG_DPM_RNG
voltage range with
10-mΩ RAC sensing
resistor
VIREG_DPM = VACP – VACN
0.5
64 mV
REG0x0F/0E() = 0x4E00H
REG0x0F/0E() = 0x3A00H
REG0x0F/0E() = 0x1C00H
REG0x0F/0E() = 0x0800H
7600
5600
2600
600
7800
5800
2800
800
8000 mA
6000 mA
3000 mA
1000 mA
Input current
regulation accuracy
(-40°C to 105°C) with
5-mΩ RAC sensing
resistor
IIIN_DPM_REG_ACC
ACP, ACN leakage
current mismatch
ILEAK_ACP_ACN
–16
10 µA
Voltage range
for input current
regulation (ILIM_HIZ
Pin)
VIREG_DPM_RNG_ILIM
1.15
4
V
Input Current
Regulation Accuracy
on ILIM_HIZ pin
VILIM_HIZ = 2.6 V
VILIM_HIZ = 2.2 V
VILIM_HIZ = 1.6 V
7600
5600
2600
8000
6000
3000
8400 mA
6400 mA
3400 mA
IIIN_DPM_REG_ACC_ILIM VILIM_HIZ = 1 V + 40
× IDPM × RAC, with
5-mΩ RAC sensing
resistor
VILIM_HIZ = 1.2 V
600
–1
1000
1400 mA
ILIM_HIZ pin leakage
current
ILEAK_ILIM
1
µA
INPUT VOLTAGE REGULATION
Input voltage
VDPM_RNG
Voltage on VBUS
3.2
19.52
V
regulation range
REG0x0B/0A()=0x3C80H
18688
10880
4480
mV
–3.5%
–4.5%
–8%
2%
3%
REG0x0B/0A()=0x1E00H
REG0x0B/0A()=0x0500H
mV
mV
Input voltage
VDPM_REG_ACC
regulation accuracy
5.5%
OTG CURRENT REGULATION
OTG output current
VIOTG_REG_RNG
regulation differential VIOTG_REG = VACP – VACN
voltage range
0
81.28 mV
OTG output current
regulation accuracy
with 100-mA LSB
and 5-mΩ RAC series
resistor
REG0x09/08() = 0x3C00H
REG0x09/08() = 0x1E00H
5600
2600
6000
3000
6400 mA
3400 mA
IOTG_ACC
REG0x09/08() = 0x0A00H
600
1000
1400 mA
OTG VOLTAGE REGULATION
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8.5 Electrical Characteristics(BQ25730) (continued)
VVBUS_UVLOZ < VVBUS < VVBUSOV_FALL , TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
OTG voltage
VOTG_REG_RNG
regulation range(OOA Voltage on VBUS
disabled)
3
24.00
V
V
REG0x07/06()=0x2CECH
23.00
12.00
5.00
–2%
–2%
–4%
2%
2%
OTG voltage
regulation
accuracy(OOA
disabled)
REG0x07/06()=0x1770H
REG0x07/06()=0x09C4H
V
V
VOTG_REG_ACC
3.5%
REGN REGULATOR
REGN regulator
voltage (0 mA – 60
mA)
VREGN_REG
VVBUS = 10 V
5.7
3.8
50
6
4.3
65
6.3
4.6
V
V
REGN voltage in drop
out mode
VDROPOUT
VVBUS = 5 V, ILOAD = 20 mA
VVBUS = 10 V, force VREGN =4 V
REGN current limit
when converter is
enabled
IREGN_LIM
mA
QUIESCENT CURRENT
VBAT = 18 V, REG0x01[7] = 1,REG0x31[6] = 0b, in
low-power mode, Disable PSYS
22
35
45 µA
60 µA
VBAT = 18 V, REG0x01[7] = 1, REG0x31[6] =
1b, REG0x31[5:4] = 11b,REGN off, Disable PSYS,
Enable low power PROCHOT
System powered by
battery. BATFET on.
ISRN + ISRP + ISW2
IBTST2 + ISW1 + IBTST1
+ IACP + IACN + IVBUS
+ IVSYS
+
IBAT_BATFET_ON
VBAT = 18 V, REG0x01[7]= 0,REG0x31[5:4]= 11b,
REGN on, Disable PSYS, In performance mode
880
980
1170 µA
1270 µA
VBAT = 18 V, REG0x01[7] = 0, REG0x31[5:4]
= 00b, REGN on, Enable PSYS, In performance
mode
Input current during
PFM in buck mode,
no load, IVBUS + IACP VIN = 20 V, VBAT = 12.6 V, 3s, REG0x01[2] = 0;
+ IACN + IVSYS + ISRP MOSFET Qg = 4 nC
+ ISRN + ISW1 + IBTST
IAC_SW_LIGHT_buck
IAC_SW_LIGHT_boost
IAC_SW_LIGHT_buckboost
2.2
2.7
2.4
mA
mA
mA
+ ISW2 + IBTST2
Input current during
PFM in boost mode,
no load, IVBUS + IACP VIN = 5 V, VBAT = 8.4 V, 2s, REG0x01[2] = 0;
+ IACN + IVSYS + ISRP MOSFET Qg = 4 nC
+ ISRN + ISW1 + IBTST2
+ ISW2 + IBTST2
Input current during
PFM in buck boost
mode, no load, IVBUS VIN = 12 V, VBAT = 12 V, REG0x01[2] = 0;
+ IACP + IACN + IVSYS MOSFET Qg = 4 nC
+ ISRP + ISRN + ISW1
+
IBTST1 + ISW2 + IBTST2
Quiescent current
during PFM in OTG
mode, EN_OOA=0b,
VBAT = 8.4 V, VBUS = 5 V, 800 kHz switching
frequency, MOSFET Qg = 4nC
3
4.2
6.2
mA
mA
mA
VBAT = 8.4 V, VBUS = 12 V, 800 kHz switching
frequency, MOSFET Qg = 4nC
IOTG_STANDBY
IVBUS + IACP + IACN
IVSYS + ISRP + ISRN
+
+
VBAT = 8.4 V, VBUS = 20 V, 800 kHz switching
frequency, MOSFET Qg = 4nC
ISW1 + IBTST2 + ISW2
IBTST2
+
CURRENT SENSE AMPLIFIER
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8.5 Electrical Characteristics(BQ25730) (continued)
VVBUS_UVLOZ < VVBUS < VVBUSOV_FALL , TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Input common mode
range
VACP_ACN_OP
Voltage on ACP/ACN
3.8
26
V
V
IADPT output clamp
voltage
VIADPT_CLAMP
IIADPT
3.1
3.2
3.3
1
IADPT output current
mA
V/V
V/V
V(IADPT) / V(ACP-ACN), REG0x00[4] = 0
V(IADPT) / V(ACP-ACN), REG0x00[4] = 1
V(ACP-ACN) = 40.96 mV
20
40
Input current sensing
gain
AIADPT
–2%
–3%
2%
3%
V(ACP-ACN) = 20.48 mV
Input current monitor
accuracy
VIADPT_ACC
V(ACP-ACN) =10.24 mV
–6%
6%
V(ACP-ACN) = 5.12 mV
–10%
10%
Maximum
CIADPT_MAX
capacitance at IADPT
Pin
100 pF
Battery common
mode range
VSRP_SRN_OP
Voltage on SRP/SRN
2.5
23.15
V
V
IBAT output clamp
voltage
VIBAT_CLAMP
IIBAT
3.05
3.2
3.3
1
IBAT output current
mA
V/V
Charge and
V(IBAT) / V(SRN-SRP), REG0x00[3] = 0,
V(IBAT) / V(SRN-SRP), REG0x00[3] = 1,
8
discharge current
sensing gain on IBAT
pin
AIBAT
16
V/V
V(SRN-SRP) = 40.96 mV
V(SRN-SRP) = 20.48 mV
V(SRN-SRP) =10.24 mV
V(SRN-SRP) = 5.12 mV
–2%
–4%
2%
4%
Charge and
discharge current
monitor accuracy on
IBAT pin
IIBAT_CHG_ACC
–7%
7%
–15%
15%
Maximum
CIBAT_MAX
capacitance at IBAT
Pin
100 pF
SYSTEM POWER SENSE AMPLIFIER
PSYS output voltage
range
VPSYS
0
0
3.3
V
IPSYS
PSYS output current
PSYS system gain
PSYS system gain
160 µA
µA/W
µA/W
4%
I(PSYS) / (P(IN) +P(BAT)), REG0x31[5:4] =
00b;REG0x31[1] = 1b
APSYS
APSYS
1
1
I(PSYS) / P(IN), REG0x31[5:4]= 01b;REG0x31[1] = 1b
Adapter only with system power = 19.5 V / 45 W, TA
= 0 to 85°C
–4%
–3%
PSYS gain accuracy
(REG0x30[13:12] =
00b)
Battery only with system power = 11 V / 44 W, TA =
0 to 85°C
3%
4%
VPSYS_ACC
PSYS gain accuracy
(REG0x30[13:12] =
01b)
Adapter only with system power = 19.5 V / 45 W, TA
= 0 to 85°C
–4%
3
VPSYS_CLAMP
PSYS clamp voltage
3.3
V
VSYS UNDER VOLTAGE LOCKOUT COMPARATOR
VSYS undervoltage
rising threshold(≥1S)
VSYS_UVLOZ
VSYS_UVLO
VSYS rising
2.3
2.2
2.5
2.4
2.65
2.55
V
V
VSYS undervoltage
falling threshold(≥1S)
VSYS falling REG3D[7:5]=000b
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8.5 Electrical Characteristics(BQ25730) (continued)
VVBUS_UVLOZ < VVBUS < VVBUSOV_FALL , TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER
VSYS undervoltage
hysteresis(≥1S)
TEST CONDITIONS
MIN
TYP
MAX UNIT
VSYS_UVLO_HYST
100
mV
VBUS UNDER VOLTAGE LOCKOUT COMPARATOR
VBUS undervoltage
rising threshold
VVBUS_UVLOZ
VVBUS_UVLO
VBUS rising
2.35
2.2
2.55
2.4
2.80
2.6
V
V
VBUS undervoltage
falling threshold
VBUS falling
VBUS undervoltage
hysteresis
VVBUS_UVLO_HYST
150
mV
VBUS converter
enable rising
threshold
VVBUS_CONVEN
VBUS rising
VBUS falling
3.2
2.9
3.5
3.9
3.5
V
VBUS converter
enable falling
threshold
VVBUS_CONVENZ
3.2
V
VBUS converter
enable hysteresis
VVBUS_CONVEN_HYST
300
mV
BATTERY UNDER VOLTAGE LOCKOUT COMPARATOR
VBAT undervoltage
rising threshold
VVBAT_UVLOZ
VSRN rising
VSRN falling
2.35
2.2
2.55
2.4
2.80
2.6
V
V
VBAT undervoltage
falling threshold
VVBAT_UVLO
VBAT undervoltage
hysteresis
VVBAT_UVLO_HYST
VVBAT_OTGEN
VVBAT_OTGENZ
VVBAT_OTGEN_HYST
150
3.55
2.4
mV
V
VBAT OTG enable
rising threshold
VSRN rising
VSRN falling
3.25
2.15
3.85
2.65
VBAT OTG enable
falling threshold
V
VBAT OTG enable
hysteresis
1150
mV
VBUS UNDER VOLTAGE COMPARATOR (OTG MODE)
VBUS undervoltage
falling threshold
VVBUS_OTG_UV
tVBUS_OTG_UV
As percentage of REG0x07/06()
85%
7
VBUS time
undervoltage deglitch
ms
ms
VBUS OVER VOLTAGE COMPARATOR (OTG MODE)
VBUS overvoltage
VVBUS_OTG_OV
tVBUS_OTG_OV
As percentage of REG0x07/06()
110%
10
rising threshold
VBUS Time
Overvoltage Deglitch
PRE-CHARGE to FAST CHARGE TRANSITION(For ≥2S)
LDO mode to
fast charge mode
threshold, VSRN
rising
VBAT_VSYS_MIN_RISE
as percentage of 0x0D/0C()
98%
100%
102%
LDO mode to
fast charge mode
threshold, VSRN
falling
VBAT_VSYS_MIN_FALL
as percentage of 0x0D/0C()
97.5%
2.5%
Fast charge mode to
LDO mode threshold as percentage of 0x0D/0C()
hysteresis
VBAT_VSYS_MIN_HYST
BATTERY LOW VOLTAGE COMPARATOR (Pre-charge to Fast Charge Threshold for 1S)
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8.5 Electrical Characteristics(BQ25730) (continued)
VVBUS_UVLOZ < VVBUS < VVBUSOV_FALL , TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
BATLOWV falling
threshold
VBATLV_FALL
2.8
V
BATLOWV rising
threshold
VBATLV_RISE
3
V
VBATLV_RHYST
BATLOWV hysteresis
200
mV
INPUT OVER-VOLTAGE COMPARATOR (ACOV)
VBUS overvoltage
rising threshold
VVBUSOV_RISE
VBUS rising
VBUS falling
26.0
25.0
26.8
25.8
1.0
100
1
27.7
26.7
V
V
VBUS overvoltage
falling threshold
VVBUSOV_FALL
VBUS overvoltage
hysteresis
VVBUSOV_HYST
tVBUSOV_RISE_DEG
tVBUSOV_FALL_DEG
V
VBUS deglitch
overvoltage rising
VBUS converter rising to stop converter
VBUS converter falling to start converter
us
ms
VBUS deglitch
overvoltage falling
INPUT OVER CURRENT COMPARATOR (ACOC)
ACP to ACN
rising threshold, w.r.t.
ILIM2_VTH
Voltage across input sense resistor rising,
Reg0x32[2]= 1
VACOC
180%
200%
220%
Measure between
ACP and ACN
VACOC_FLOOR
VACOC_CEILING
Set IIN_DPM to minimum
Set IIN_DPM to maximum
44
50
56 mV
Measure between
ACP and ACN
172
180
188 mV
tACOC_DEG_RISE
tACOC_RELAX
Rising deglitch time
Relax time
Deglitch time to trigger ACOC
250
250
us
Relax time before converter starts again
ms
SYSTEM OVER-VOLTAGE COMPARATOR (SYSOVP)
1 s
5.8
11.7
19
6
12
6.1
12.2
20
V
V
V
V
V
V
V
V
V
V
2 s
System overvoltage
VSYSOVP_RISE
rising threshold to
turnoff converter
3 s
4 s
5 s
1 s
2 s
3 s
4 s
5 s
19.5
19.5
25
19
20
24
26
5.5
11.7
19.3
19.3
24.5
System overvoltage
falling threshold
VSYSOVP_FALL
Discharge current
when SYSOVP
stop switching was
triggered
ISYSOVP
on VSYS pin
20
mA
BAT OVER-VOLTAGE COMPARATOR (BATOVP)
Overvoltage rising
threshold as
percentage of
VBAT_REG in
REG0x05/04h()
1 s
102.3%
102.3%
104%
104%
106%
105%
VBATOVP_RISE
≥2 s
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8.5 Electrical Characteristics(BQ25730) (continued)
VVBUS_UVLOZ < VVBUS < VVBUSOV_FALL , TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Overvoltage falling
1 s
100%
102%
104%
threshold as
VBATOVP_FALL
percentage of
VBAT_REG in
REG0x05/04h()
≥2 s
1 s
100%
102%
2%
103%
Overvoltage
hysteresis as
percentage of
VBAT_REG in
REG0x05/04h()
VBATOVP_HYST
≥2 s
2%
Discharge current
during BATOVP
IBATOVP
Discharge current through VSYS pin
20
mA
CONVERTER OVER-CURRENT COMPARATOR (Q2)
Converter Over-
Reg0x32[5]=1b
150
210
mV
mV
Current Limit across
Q2 MOSFET drain to
source voltage
VOCP_lim_Q2
Reg0x32[5]=0b
Reg0x32[5]=1b
Reg0x32[5]=0b
45
60
mV
mV
System Short or SRN
< 2.4 V
VOCP_lim_SYSSHRT_Q2
CONVERTER OVER-CURRENT COMPARATOR (ACX)
Reg0x32[4]=1b; RSNS_RAC=0b
150
100
280
200
90
mV
mV
mV
mV
mV
mV
mV
mV
Converter Over-
Current Limit across
ACP-ACN input
current sensing
resistor
Reg0x32[4]=1b; RSNS_RAC=1b
Reg0x32[4]=0b;RSNS_RAC=0b
Reg0x32[4]=0b; RSNS_RAC=1b
Reg0x32[4]=1b;RSNS_RAC=0b
Reg0x32[4]=1b;RSNS_RAC=1b
Reg0x32[4]=0b;RSNS_RAC=0b
Reg0x32[4]=0b;RSNS_RAC=1b
VOCP_lim_ACX
60
System Short or SRN
< 2.4 V
VOCP_lim_SYSSHRT_ACX
150
120
THERMAL SHUTDOWN COMPARATOR
Thermal shutdown
TSHUT_RISE
Temperature increasing
Temperature reducing
155
135
20
°C
°C
°C
us
rising temperature
Thermal shutdown
TSHUTF_FALL
falling temperature
Thermal shutdown
TSHUT_HYS
hysteresis
Thermal deglitch
tSHUT_RDEG
100
12
shutdown rising
Thermal deglitch
tSHUT_FHYS
ms
shutdown falling
ICRIT PROCHOT COMPARATOR
Input current rising
threshold for throttling
as 10% above
ILIM2_VTH
INOM PROCHOT COMPARATOR
INOM rising threshold
IICRIT_PRO
Only when ILIM2 setting is higher than 2A
105%
105%
96%
110%
117%
116%
IINOM_PRO
as 10% above
IIN_DPM
110%
BATTERY DISCHARGE CURRENT LIMIT PROCHOT COMPARATOR(IDCHG)
16.384
A
IDCHG threshold1 for Reg0x39[7:2]=010000b, with 5mΩ RSR current
IDCHG_TH1
throttling CPU
sensing resistor
103%
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8.5 Electrical Characteristics(BQ25730) (continued)
VVBUS_UVLOZ < VVBUS < VVBUSOV_FALL , TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
IDCHG threshold1
deglitch time
IDCHG_DEG1
IDCHG_TH2
tDCHG_DEG2
Reg0x39h[1:0]=01b
1.25
sec
IDCHG threshold2 for
throttling for IDSCHG
of 6 A
24.576
A
Reg0x39[7:2]=010000b 3C[5:3]=001b,with 5mΩ
RSR current sensing resistor
96%
103%
IDCHG threshold2
deglitch time
Reg0x3C[7:6]=01b
1.6
ms
INDEPENDENT COMPARATOR
Reg0x30h[7]= 1, CMPIN falling
Reg0x30h[7]= 0, CMPIN falling
1.17
2.27
1.2
2.3
1.23
2.33
V
V
Independent
VINDEP_CMP
comparator threshold
Independent
comparator
hysteresis
VINDEP_CMP_HYS
CMPIN falling
100
mV
POWER MOSFET DRIVER
PWM OSCILLATOR AND RAMP
Reg0x01[1] = 0
Reg0x01[1] = 1
680
340
800
400
920 kHz
460 kHz
PWM switching
frequency
FSW
BATFET GATE DRIVER (BATDRV)
Gate drive voltage on
BATFET
VBATDRV_ON
8.5
10
30
11.5
V
Drain-source voltage
on BATFET during
ideal diode operation
VBATDRV_DIODE
mV
Measured by
RBATDRV_ON
sourcing 10 µA
current to BATDRV
3
4
6
kΩ
Measured by sinking
10 µA current from
BATDRV
RBATDRV_OFF
1.2
2.1 kΩ
PWM HIGH SIDE DRIVER (HIDRV Q1)
The resistance of the
RDS_HI_ON_Q1
RDS_HI_OFF_Q1
VBTST1_REFRESH
gate driver loop for
turning on Q1
VBTST1 - VSW1 = 5 V
6
1.3
3.7
Ω
The resistance of the
gate driver loop for
turning off Q1
VBTST1 - VSW1 = 5 V
2.2
4.6
Ω
V
Bootstrap refresh
comparator falling
threshold voltage
VBTST1 - VSW1 when low-side refresh pulse is
requested
3.2
PWM HIGH SIDE DRIVER (HIDRV Q4)
The resistance of the
RDS_HI_ON_Q4
RDS_HI_OFF_Q4
VBTST2_REFRESH
gate driver loop for
turning on Q4
VBTST2 - VSW2 = 5 V
6
1.5
3.7
Ω
Ω
V
The resistance of the
gate driver loop for
turning off Q4
VBTST2 - VSW2 = 5 V
2.4
4.6
Bootstrap refresh
comparator falling
threshold voltage
VBTST2 - VSW2 when low-side refresh pulse is
requested
3.3
PWM LOW SIDE DRIVER (LODRV Q2)
The resistance of the
RDS_LO_ON_Q2
gate driver loop for
turning on Q2
VBTST1 - VSW1 = 5.5 V
6
Ω
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8.5 Electrical Characteristics(BQ25730) (continued)
VVBUS_UVLOZ < VVBUS < VVBUSOV_FALL , TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VBTST1 - VSW1 = 5.5 V
MIN
TYP
MAX UNIT
The resistance of the
gate driver loop for
turning off Q2
RDS_LO_OFF_Q2
1.7
2.6
Ω
PWM LOW SIDE DRIVER (LODRV Q3)
The resistance of the
RDS_LO_ON_Q3
gate driver loop for
turning on Q3
VBTST2 - VSW2 = 5.5 V
6.8
2.2
Ω
Ω
The resistance of the
gate driver loop for
turning off Q3
RDS_LO_OFF_Q3
VBTST2 - VSW2 = 5.5 V
4.6
INTERNAL SOFT START During Charge Enable
Charge current soft-
SSSTEP_SIZE
64
8
mA
us
start step size
Charge current soft-
SSSTEP_TIME
start duration time for
each step
INTEGRATED BTST DIODE (D1)
VF_D1 Forward bias voltage IF = 20 mA at 25°C
0.8
0.8
V
V
Reverse breakdown
voltage
VR_D1
IR = 2 µA at 25°C
20
INTEGRATED BTST DIODE (D2)
VF_D2
Forward bias voltage IF = 20 mA at 25°C
V
V
Reverse breakdown
IR = 2 µA at 25°C
voltage
VR_D2
20
INTERFACE
LOGIC INPUT (SDA, SCL)
VIN_ LO Input low threshold
VIN_ HI Input high threshold
I2C
I2C
0.4
V
V
1.3
LOGIC OUTPUT OPEN DRAIN (SDA, CHRG_OK, CMPOUT)
Output saturation
voltage
VOUT_ LO
5 mA drain current
Voltage = 7 V
0.4
1
V
VOUT_ LEAK
Leakage current
–1
µA
LOGIC INPUT (OTG/VAP/FRS pin)
VIN_ LO_OTG Input low threshold
VIN_ HI_OTG Input high threshold
0.4
V
V
1.3
LOGIC OUTPUT OPEN DRAIN SDA
Output Saturation
Voltage
VOUT_ LO_SDA
VOUT_ LEAK_SDA
5 mA drain current
Voltage = 7 V
0.4
1
V
Leakage Current
–1
–1
–1
µA
LOGIC OUTPUT OPEN DRAIN CHRG_OK
Output Saturation
VOUT_ LO_CHRG_OK
5 mA drain current
Voltage = 7 V
0.4
1
V
Voltage
VOUT_ LEAK _CHRG_OK Leakage Current
µA
LOGIC OUTPUT OPEN DRAIN CMPOUT
Output Saturation
VOUT_ LO_CMPOUT
5 mA drain current
Voltage = 7 V
0.4
1
V
Voltage
VOUT_ LEAK _CMPOUT
Leakage Current
µA
LOGIC OUTPUT OPEN DRAIN (PROCHOT)
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8.5 Electrical Characteristics(BQ25730) (continued)
VVBUS_UVLOZ < VVBUS < VVBUSOV_FALL , TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Output saturation
VOUT_ LO_PROCHOT
50 Ω pullup to 1.05 V / 5-mA
300 mV
voltage
VOUT_ LEAK_PROCHOT Leakage current
ANALOG INPUT (ILIM_HIZ)
Voltage = 5.5 V
–1
1
µA
Voltage to get out of
HIZ mode
VHIZ_ LO
ILIM_HIZ pin rising
ILIM_HIZ pin falling
0.8
V
V
Voltage to enable HIZ
mode
VHIZ_ HIGH
0.4
ANALOG INPUT (CELL_BATPRESZ)
CELL_BATPRESZ pin voltage as percentage of
REGN = 6 V
VCELL_5S
VCELL_4S
VCELL_3S
VCELL_2S
VCELL_1S
5s
90%
68.4%
51.7%
35%
100%
75%
55%
40%
25%
CELL_BATPRESZ pin voltage as percentage of
REGN = 6 V
4s setting
3s setting
2s setting
1s setting
81.5%
65%
CELL_BATPRESZ pin voltage as percentage of
REGN = 6 V
CELL_BATPRESZ pin voltage as percentage of
REGN = 6 V
48.5%
31.6%
CELL_BATPRESZ pin voltage as percentage of
REGN = 6 V
18.4%
18%
VCELL_BATPRESZ_RISE Battery is present
VCELL_BATPRESZ_FALL Battery is removed
ANALOG INPUT (COMP1, COMP2)
CELL_BATPRESZ rising
CELL_BATPRESZ falling
15%
ILEAK_COMP1
ILEAK_COMP2
COMP1 Leakage
COMP2 Leakage
–120
–120
120 nA
120 nA
8.6 Timing Requirements
MIN
NOM
MAX
UNIT
I2C TIMING CHARACTERISTICS
tr
SCL/SDA rise time
SCL/SDA fall time
SCL pulse width high
SCL pulse width low
300
300
50
ns
ns
µs
µs
µs
µs
ns
ns
µs
µs
kHz
tf
tHIGH
tLOW
tSU:STA
tHD:STA
tSU:DAT
tHD:DAT
tSU:STO
tBUF
0.6
1.3
0.6
0.6
100
300
0.6
1.3
10
Setup time for START condition
Start condition hold time after which first clock pulse is generated
Data setup time
Data hold time
Set up time for STOP condition
Bus free time between START and STOP conditions
Clock frequency
fSCL
400
35
HOST COMMUNICATION FAILURE
tTIMEOUT
tBOOT
I2C bus release timeout(1)
25
10
4
ms
ms
s
Deglitch for watchdog reset signal
Watchdog timeout period, REG0x01[6:5]=01
Watchdog timeout period, REG0x01[6:5]=10
Watchdog timeout period, REG0x01[6:5]=11
5.5
88
7
105
210
tWDI
70
140
s
175
s
(1) Devices participating in a transfer timeout when any clock low exceeds the 25-ms minimum timeout period. Devices that have detected
a timeout condition must reset the communication no later than the 35-ms maximum timeout period. Both a host and a target must
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adhere to the maximum value specified because it incorporates the cumulative stretch limit for both a host (10 ms) and a target (25
ms).
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8.7 Typical Characteristics
90
85
80
75
70
65
60
55
50
90
85
80
75
70
65
60
55
50
VOUT=4.2V
VOUT=8.4V
VOUT=12.6V
VOUT=16.8V
VOUT=21.0V
VOUT=4.2V
VOUT=8.4V
VOUT=12.6V
VOUT=16.8V
VOUT=21.0V
0
0.01
0.02
0.03
0.04
0.05
0
0.01
0.02
0.03
0.04
0.05
Output Current(A)
Output Current(A)
VIN = 5 V
RAC=5mΩ
PFM mode
RSR=5mΩ
VOUT=System Voltage
Inductance=4.7uH
VIN = 9 V
RAC=5mΩ
PFM mode
RSR=5mΩ
VOUT=System Voltage
Inductance=4.7uH
Figure 8-1. Light Load System Efficiency
Figure 8-2. Light Load System Efficiency
90
85
80
75
70
65
60
55
50
90
85
80
75
70
65
60
55
50
45
40
VOUT=4.2V
VOUT=4.2V
VOUT=8.4V
VOUT=12.6V
VOUT=16.8V
VOUT=21.0V
VOUT=8.4V
VOUT=12.6V
VOUT=16.8V
VOUT=21.0V
0
0.01
0.02
0.03
0.04
0.05
0
0.01
0.02
0.03
0.04
0.05
Output Current(A)
Output Current(A)
VIN = 15 V
RAC=5mΩ
PFM mode
RSR=5mΩ
VOUT=System Voltage
Inductance=4.7uH
VIN = 20 V
RAC=5mΩ
PFM mode
RSR=5mΩ
VOUT=System Voltage
Inductance=4.7uH
Figure 8-3. Light Load System Efficiency
Figure 8-4. Light Load System Efficiency
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8.7 Typical Characteristics (continued)
100
98
96
94
92
90
88
100
98
96
94
92
90
88
86
84
82
VOUT=3.7V
VOUT=3.7V
86
84
82
VOUT=7.4V
VOUT=11.1V
VOUT=14.8V
VOUT=18.5V
VOUT=7.4V
VOUT=11.1V
VOUT=14.8V
VOUT=18.5V
0
1
2
3
4
5
6
7
8
9
10 11 12
0
1
2
3
4
5
6
7
8
9
10 11 12
Output Current(A)
Output Current(A)
VIN = 5 V
CCM
Fs=400kHz
RSR=5mΩ
VOUT=System Voltage
VIN = 9 V
CCM
Fs=400kHz
RSR=5mΩ
VOUT=System Voltage
RAC=5mΩ
Inductance=4.7uH
RAC=5mΩ
Inductance=4.7uH
Figure 8-5. System Efficiency
Figure 8-6. System Efficiency
100
98
96
94
92
90
88
86
84
82
100
98
96
94
92
90
88
86
84
82
VOUT=3.7V
VOUT=7.4V
VOUT=11.1V
VOUT=14.8V
VOUT=18.5V
VOUT=3.7V
VOUT=7.4V
VOUT=11.1V
VOUT=14.8V
VOUT=18.5V
0
1
2
3
4
5
6
7
8
9
10 11 12
0
1
2
3
4
5
6
7
8
9
10 11 12
Output Current(A)
Output Current(A)
VIN = 15 V
CCM
Fs=400kHz
RSR=5mΩ
VOUT=System Voltage
VIN = 20 V
CCM
Fs=400kHz
RSR=5mΩ
VOUT=System Voltage
RAC=5mΩ
Inductance=4.7uH
RAC=5mΩ
Inductance=4.7uH
Figure 8-7. System Efficiency
Figure 8-8. System Efficiency
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8.7 Typical Characteristics (continued)
100
98
96
94
92
90
88
100
98
96
94
92
90
88
86
84
82
VOUT=3.7V
86
84
82
VOUT=7.4V
VOUT=11.1V
VOUT=14.8V
VOUT=18.5V
VOTG=5V
VOTG=9V
VOTG=15V
VOTG=20V
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Output Current(A)
Output Current(A)
PTM Mode
RSR=5mΩ
VOUT=System Voltage
Inductance=4.7uH
VBAT= 4 V
RAC=5mΩ
CCM Fs=400kHz
RAC=5mΩ
RSR=5mΩ Inductance=4.7uH
Figure 8-9. PTM Mode System Efficiency
Figure 8-10. OTG Efficiency with 1S Battery
100
98
96
94
92
90
88
86
84
82
100
98
96
94
92
90
88
86
84
82
VOTG=5V
VOTG=5V
VOTG=9V
VOTG=15V
VOTG=20V
VOTG=9V
VOTG=15V
VOTG=20V
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Output Current(A)
Output Current(A)
VBAT= 8 V
RAC=5mΩ
CCM Fs=400kHz
VBAT= 12 V
RAC=5mΩ
CCM Fs=400kHz
RSR=5mΩ Inductance=4.7uH
RSR=5mΩ Inductance=4.7uH
Figure 8-11. OTG Efficiency with 2S Battery
Figure 8-12. OTG Efficiency with 3S Battery
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8.7 Typical Characteristics (continued)
100
98
96
94
92
90
88
100
98
96
94
92
90
88
86
84
82
86
84
82
VOTG=5V
VOTG=9V
VOTG=15V
VOTG=20V
VOTG=5V
VOTG=9V
VOTG=15V
VOTG=20V
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Output Current(A)
Output Current(A)
VBAT= 16 V
RAC=5mΩ
CCM Fs=400kHz
VBAT= 20 V
RAC=5mΩ
CCM Fs=400kHz
RSR=5mΩ Inductance=4.7uH
RSR=5mΩ Inductance=4.7uH
Figure 8-13. OTG Efficiency with 4S Battery
Figure 8-14. OTG Efficiency with 5S Battery
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9 Detailed Description
9.1 Overview
The BQ25730 is a narrow VDC buck-boost charger controller for oxygen concentrator, ventilator, and portable
electronics such as tablet and other mobile devices with rechargeable batteries. It provides seamless transition
between different converter operation modes (buck, boost, or buck-boost), fast transient response, and high light
load efficiency.
The BQ25730 supports a wide range of power sources, including USB-C PD ports, legacy USB ports, traditional
AC-DC adapters, and so forth. It takes input voltage from 3.5 V to 26 V and charges a battery of 1 to 5 cells in
series. In the absence of an input source, the BQ25730 supports the USB On-the-Go (OTG) function from a 1- to
5-cell battery to generate an adjustable 3 V to 24 V at the USB port with 8-mV resolution.
The BQ25730 features Dynamic Power Management (DPM) to limit input power and avoid AC adapter
overloading. During battery charging, as system power increases, charging current is reduced to maintain total
input current below adapter rating. If system power demand temporarily exceeds adapter rating, the BQ25730
supports the NVDC architecture to allow battery discharge energy to supplement system power.
The latest version of the USB-C PD specification includes Fast Role Swap (FRS) to ensure power role swapping
occurs in a timely fashion so that the device(s) connected to the dock never experience momentary power loss
or glitching. The device integrates FRS with compliance to the USB-C PD specification.
The TI patented switching frequency dithering pattern can significantly reduce EMI noise over the entire
conductive EMI frequency range (150 kHz to 30 MHz). Multiple dithering scale options are available to provide
flexibility for different applications to simplify EMI noise filter design.
The I2C host controls input current, charge current, and charge voltage registers with high resolution, high
accuracy regulation limits.
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9.2 Functional Block Diagram
4
CHRG_OK
CHRG_OK_DRV
50ms Rising
Deglitch
Block Diagram
** programmable in register
EN_REGN
50ms Rising
Deglitch
3.5V
1
VBUS
VREF_CMP**
CMP_DEG**
14
15
CMPIN
ACOV
26.8V
CMPOUT
VREF_VINDPM or VREF_VOTG
COMP1
COMP2
16
17
VDDA
VSNS_VINDPM or VSYS_VOTG
EN_HIZ
ILIM_HIZ
VREF_ILIM
6
Decoder
VSYS
VREF_IIN_DPM, or VREF_IOTG
2
3
ACP
ACN
VSNS_IIN_DPM, or VSNS_IOTG
LDO Mode
Gate Control
BATDRV
21
20X/40X
VSYS-10V
20X/40X
VSNS_IOTG
30
31
32
7
BTST1
IADPT
IBAT
HIDRV1
Loop Selector
and
Error Ampli er
8
9
VSNS_IIN
VSNS_ICHG
SW1
VSNS_IDCHG
16X/8X
PWM
VDDA
EN_REGN
REGN
LDO
REGN
VREF_ICHG
VSNS_ICHG
28
EN_HIZ
EN_LEARN
EN_LDO
20
19
SRP
SRN
16X/8X
EN_CHRG
EN_OTG
VREF_VBAT
PWM
Driver
Logic
29
27
25
24
23
LODRV1
PGND
BTST2
HIDRV2
SW2
VSNS_VBAT
VREF_VSYS
22
VSYS
VSNS_VSYS
VSNS_VSYS
VSNS_VBAT
ACN
PSYS
(ACP-ACN)
SRN
VSNS_ICHG Over Current
10
VSNS_IDCHG
Over Voltage
(SRN-SRP)
VSNS_IIN_DPM
VSNS_VINDPM
26
LODRV2
Detect
EN_HIZ
I2C
Interface
EN_LEARN
EN_LDO
EN_CHRG
EN_OTG
BATPRESZ
12
SDA
ChargeOp on0()
ChargeOp on1()
ChargeOp on2()
ChargeCurrent()
ChargeVoltage()
InputCurrent()
InputVoltage()
MinSysVoltage()
OTGVoltage()
Decoder
CELL_CONFIG
18
CELL_BATPRESZ
VREF_VSYS
13
5
SCL
VREF_VBAT
VREF_ICHG
Loop
Regula on
Reference
IADPT
IBAT
VREF_IIN_DPM
VREF_VINDPM
VREF_IOTG
OTG/VAP/FRS
Processor
Hot
11
PROCHOT
VSYS
VREF_VOTG
CHRG_OK
OTGCurrent()
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9.3 Feature Description
9.3.1 Power-Up Sequence
The device powers up from the higher voltage of VBUS or VBAT through integrated power selector. The charger
starts POR (power on reset) when VBUS exceeds VVBUS_UVLOZ or VBAT exceeds VVBAT_UVLOZ. 5 ms after either
VBUS or VBAT becomes valid, the charger resets all the registers to the default state. Another 5 ms later, the
user registers become accessible to the host.
Power up sequence when the charger is powered up from VBUS:
•
•
•
After VBUS above VVBUS_UVLOZ, enable 6-V LDO REGN pin and VDDA pin voltage increase accordingly.
CHRG_OK pin goes HIGH and the AC_STAT is configured to 1.
After passing VBUS qualification, the REGN voltage is setup. VINDPM is detected in VBUS steady state
voltage and IIN_DPM is detected at ILIM_HIZ pin steady state voltage.
Battery CELL configuration is read at CELL_BATPRESZ pin voltage and compared to VDDA to determine
cell configuration. Corresponding the default value of ChargeVoltage register (REG0x05/04()), ChargeCurrent
register (Reg0x03/02), VSYS_MIN register (Reg0x0D/0C) and SYSOVP threshold are loaded.
Converter powers up.
•
Power up sequence when the charger is powered up from VBAT:
•
•
If only battery is present and the voltage is above VVBAT_UVLOZ , charger wakes up and the BATFET is turned
on and connecting the battery to system.
By default, the charger is in low power mode (EN_LWPWR = 1b) with lowest quiescent current. The
REGN LDO stays off. The Quiescent current is minimized. PROCHOT is available through the independent
comparator by setting EN_PROCHOT_LPWR=1b.
•
•
•
The adapter present comparator is activated, to monitor the VBUS voltage.
SDA and SDL lines stand by waiting for host commands.
Device can move to performance mode by configuring EN_LWPWR = 0b. The host can enable IBAT
buffer through setting EN_IBAT=1b to monitor discharge current. The PSYS, PROCHOT or the independent
comparator also can be enabled by the host.
•
In performance mode, the REGN LDO is always available to provide an accurate reference and gate drive
voltage for the converter.
9.3.2 Two-Level Battery Discharge Current Limit
To prevent the triggering of battery overcurrent protection and avoid battery wear-out, two battery current
limit levels (IDCHG_TH1 and IDCHG_TH2) PROCHOT profiles are recommended to be enabled. Define
IDCHG_TH1 through REG0x39h[7:2], IDCHG_TH2 is set through REG0x3Ch[5:3] for fixed percentage of
IDCHG_TH1. There are dedicated de-glitch time setting registers(IDCHG_DEG1 and IDCHG_DEG2) for both
IDCHG_TH1 and IDCHG_TH2.
•
When battery discharge current is continuously higher than IDCHG_TH1 for more than IDCHG_DEG1 de-
glitch time, PROCHOT is asserted immediately. If the discharge current reduces to lower than IDCHG_TH1,
then the time counter resets automatically. STAT_IDCHG1 bit will be set to 1 after PROCHOT is triggered.
Set PP_IDCHG1=1b to enable IDCHG_TH1 for triggering PROCHOT.
•
When battery discharge current is continuously higher than IDCHG_TH2 for more than IDCHG_DEG2 de-
glitch time, PROCHOT is asserted immediately. If the discharge current reduces to lower than IDCHG_TH2,
then the time counter resets automatically. STAT_IDCHG2 bit will be set to 1 after PROCHOT is triggered.
Set PP_IDCHG2=1b to enable IDCHG_TH2 for triggering PROCHOT.
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IDCHG_TH2
IDCHG_TH1
0A
/PROCHOT
IDCHG_DEG1
IDCHG_DEG1
IDCHG_DEG2
IDCHG_DEG2
Figure 9-1. Two-Level Battery Discharging Current Trigger PROCHOT Diagram
9.3.3 Fast Role Swap Feature
Fast Role Swap (FRS) means charger quickly swaps from power sink role to power source role to provide an
OTG output voltage to accessories when the original power source is disconnected. This feature is defined to
transfer the charger from forward mode to OTG mode quickly without dropping VBUS voltage per USB-C PD
specification requirement.Please contact factory for more detail information about FRS mode.
9.3.4 CHRG_OK Indicator
CHRG_OK is an active HIGH open drain indicator. It indicates the charger is in normal operation when the
following conditions are valid:
•
•
•
VBUS is above VVBUS_CONVEN
VBUS is below VACOV_FALL
No faults triggered such as: SYSOVP/SYSUVP/ACOC/TSHUT/BATOVP/BATOC/force converter off.
9.3.5 Input and Charge Current Sensing
The charger supports 10 mΩ and 5 mΩ for both input current sensing and charge current sensing. By default, 5
mΩ is enabled by POR setting RSNS_RAC=1b and RSNS_RSR=1b, if 10-mΩ sensing is used please configure
RSNS_RAC=0b and RSNS_RSR=0b. Lower current sensing resistor can help improve overall charge efficiency
especially under heavy load. At same time PSYS,IADPT,IBAT pin accuracy and IINDPM/ICHG/IOTG regulation
accuracy get worse due to effective signal reduction in comparison to error signal components.
When RSNS_RAC=RSNS_RSR=0b and 10 mΩ is used for both input and charge current sensing, the pre-
charge current clamp is 384 mA (2 A for 1S if VSYS_MIN>VBAT>3 V ), the maximum IIN_HOST setting is
clamped at 6.35 A, and the maximum charge current is clamped at 8.128 A.
When RSNS_RAC=RSNS_RSR=1b and 5 mΩ is used for both input and charge current sensing, the charger
will internally compensate pre-charge current clamp to be 384 mA (2 A for 1S if VSYS_MIN>VBAT>3 V )
under 5-mΩ current sensing which keeps consistent between 10 mΩ and 5 mΩ. Under 5-mΩ current sensing
application charge current range is doubled to 16.256 A. Based on EN_FAST_5MOHM register bit status and
IADPT pin resistor the maximum input current can be configured referring to Table 9-1:
For defined current sense resistors (10 mΩ/5 mΩ), PSYS function is still valid when unsymmetrical input current
sense and charge current sense resistors are used. But RSNS_RAC and RSNS_RSR bit status have to be
consistent with practical resistors used in the system.
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Table 9-1. Maximum Input Current Limit Configuration Table
INDUCTANCE (IADPT Pin
Resistance)
MAXIMUM INPUT CURRENT LIMIT
(IINDPM)
EN_FAST_5MOHM
RSR_RAC BIT
Xb
1b
0b
Xb
Xb
RSNS_RAC=0b
RSNS_RAC=1b
RSNS_RAC=1b
RSNS_RAC=0b
RSNS_RAC=1b
6.35 A
6.35 A
10 A
1.0 uH(90.9 kΩ)
1.5 uH(121 kΩ)
2.2 uH(137 kΩ)
6.35 A
10 A
3.3 uH(169 kΩ)
9.3.6 Input Voltage and Current Limit Setup
The actual input current limit being adopted by the device is the lower setting of IIN_DPM and ILIM_HIZ pin.
Register IIN_DPM input current limit setting will reset for below scenarios:
•
When adapter is removed (CHRG_OK is not valid). Note when adapter is removed IIN_HOST will be reset
one time to 3.25 A, under battery only host is still able to overwrite IIN_HOST register with a new value. If the
adapter plug back in and CHRG_OK is pulled up, IIN_HOST will not be reset again.
•
When input current optimization (ICO) is executed (EN_ICO_MODE=1b), the charger will automatically detect
the optimized input current limit based on adapter output characteristic. The final IIN_DPM register setting
could be different from IIN_HOST after ICO.
The voltage regulation loop of the charger regulates the input voltage to prevent the input adapter collapsing.
The VINDPM threshold should be configured based on no load input voltage level.Charger initiates a VBUS
voltage measurement without any load (VBUS at no load) right before the converter is enabled. The default
VINDPM threshold is VBUS at no load – 1.28 V. Host can adjust VINDPM threshold after device POR through
InputVoltage register(0x0B/0Ah[]), range from 3.2V to 19.52V with LSB 64mV.
After input current and voltage limits are set, the charger device is ready to power up. The host can always
program the input current and voltage limit after the charger being powered up based on the input source type.
9.3.7 Battery Cell Configuration
CELL_BATPRESZ pin is biased with a resistor divider from VDDA to GND. After REGN LDO is activated
(VDDA rise up), the device detects the battery configuration through CELL_BATPRESZ pin bias voltage. No
external cap is allowed at CELL_BATPRESZ pin. When CELL_BATPRESZ pin is pulled down to GND (because
of battery removal) at the beginning of startup process, VSYS_MIN = 3.6 V and SYS_OVP = 25 V and
Maximum charge voltage (REG0x15) follow 1 cell default setting 4.2 V. VSYS and VBAT ADC offset is also
determined by CELL_BATPRESZ pin setting, under 1S-4S VSYS/VBAT ADC holds 2.88-V offset, however under
5S detection VSYS/VBAT ADC only holds 8.16-V offset to cover higher voltage range. Refer to Table 9-2 for
CELL_BATPRESZ pin configuration typical voltage for swept cell count.
Table 9-2. Battery Cell Configuration
PIN VOLTAGE w.r.t.
VDDA
CHARGEVOLTAGE
(REG0x05/04h)
VSYS/VBAT
ADC OFFSET
CELL COUNT
SYSOVP
VSYS_MIN
5S
100%(Directly connect to
VDDA)
21.000 V
25 V
15.4 V
8.16 V
4S
75%
55%
40%
25%
0%
16.800 V
12.600 V
8.400 V
4.200 V
4.200 V
19.5 V
19.5 V
12 V
12.3 V
9.2 V
6.6 V
3.6 V
3.6 V
2.88 V
2.88 V
2.88 V
2.88 V
2.88 V
3S
2S
1S
6 V
Battery removal
25 V
9.3.8 Device HIZ State
When input source is present, the charger can enter HIZ mode (converter shuts off) when ILIM_HIZ pin voltage
is below 0.4 V or EN_HIZ is set to 1b. The charger is in the low quiescent current mode with REGN LDO
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enabled, ADC circuits are disactivated to reduce quiescent current. In order to exit HIZ mode, ILIM_HIZ pin
voltage has to be higher than 0.8 V and EN_HIZ bit has to be set to 0b.
9.3.9 USB On-The-Go (OTG)
The device supports USB OTG operation to deliver power from the battery to other portable devices through
USB port. The OTG mode output voltage is set in OTGVoltage register REG0x07/06() with 8-mV LSB range
from 3.0 V to 24 V. The OTG mode output current is set in OTGCurrent register REG0x09() with 100-mA LSB
range from 0 A to 12.7 A under 5-mΩ input current sensing. Both OTG voltage and OTG current are qualified for
USB-C™ programed power supply (PPS) specification in terms of resolution and accuracy. The OTG mode can
be enabled following below steps:
•
•
•
•
Set target OTG current limit in OTGCurrent register, VBUS is below VVBUS_CONVENZ
Set OTG_VAP_MODE = 1b and EN_OTG = 1b.
OTG/VAP/FRS pin is pulled high.
15 ms after the above conditions are valid, converter starts and VBUS ramps up to target voltage. CHRG_OK
pin goes HIGH if OTG_ON_CHRGOK= 1b.
.
OTG/VAP/FRS pin is used as multi-function to enable OTG and FRS mode.
9.3.10 Converter Operation
The charger operates in buck, buck-boost and boost mode under different VBUS and VSYS combination. The
buck-boost can operate seamlessly across the three operation modes. The 4 main switches operating status
under continuous conduction mode (CCM) are listed below for reference.
Table 9-3. MOSFET Operation
MODE
Q1
BUCK
Switching
Switching
OFF
BUCK-BOOST
BOOST
ON
Switching
Q2
Switching
OFF
Q3
Switching
Switching
Switching
Q4
ON
Switching
9.3.11 Inductance Detection Through IADPT Pin
The charger reads both converter operation frequency and the inductance value through the resistance tied to
IADPT pin before the converter starts up. The resistances recommended for 2.2-μH (800 kHz), 3.3-μH (800 kHz)
and 4.7-μH (400 kHz) inductance refers to Table 9-4. A surface mount chip resistor with ±3% or better tolerance
must to be used for an accurate inductance detection.
Table 9-4. Inductor Detection through IADPT Resistance
INDUCTOR IN USE
RESISTOR ON IADPT PIN
137 kΩ or 140 kΩ
169 kΩ
2.2 µH (recommended for 800 kHz)
3.3 µH (recommended for 800 kHz)
4.7 µH (recommended for 400 kHz)
191 kΩ or 187 kΩ
9.3.12 Converter Compensation
The charger employs two compensation pins COMP1 and COMP2 for converter compensation purpose,
appropriate RC network is needed to guarantee converter steady state and transient operation. Under different
operation frequency corresponding RC network value needs to be configured respectively as shown in below
table. The definition of these RC components can be referred to Figure 9-2. It is not recommended to change the
compensation network value due to the complexity of various operation modes.
Table 9-5. Compensation Configuration
COMPONENT
INDUCTOR
COMP1 R1
COMP1 C11
COMP1 C12
COMP2 R2
COMP2 C21
COMP2 C22
VALUE
400 kHz
4.7 μH
40.2 kΩ
4.7 nF
33 pF
15 kΩ
680 pF
15 pF
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Table 9-5. Compensation Configuration (continued)
COMPONENT
VALUE
INDUCTOR
COMP1 R1
COMP1 C11
COMP1 C12
COMP2 R2
COMP2 C21
COMP2 C22
800 kHz
800 kHz
3.3 μH
2.2 μH
16.9 kΩ
16.9 kΩ
3.3 nF
3.3 nF
33 pF
33 pF
15 kΩ
10 kΩ
1200 pF
1200 pF
15 pF
15 pF
COMP1
COMP2
R1
R2
C12
C22
C11
C21
Figure 9-2. Compensation RC Network
9.3.13 Continuous Conduction Mode (CCM)
With sufficient charge or system current, the inductor current does not cross 0 A, which is defined as CCM. The
controller starts a new cycle with ramp coming up from 200 mV. As long as the error amplifier output voltage
is above the ramp voltage, the high-side MOSFET (HSFET) stays on. When the ramp voltage exceeds error
amplifier output voltage, HSFET turns off and low-side MOSFET (LSFET) turns on. At the end of the cycle,
ramp gets reset and LSFET turns off, ready for the next cycle. There is always break-before-make logic during
transition to prevent cross-conduction and shoot-through. During the dead time when both MOSFETs are off, the
body-diode of the low-side power MOSFET conducts the inductor current.
During CCM, the inductor current always flows. Having the LSFET turn-on when the HSFET is off keeps the
power dissipation low and allows safe charging at high currents.
9.3.14 Pulse Frequency Modulation (PFM)
In order to improve converter light-load efficiency, BQ25730 switches to PFM operation at light load. The
effective switching frequency will decrease accordingly when system load decreases. The minimum frequency
can be limited to 25 kHz when the OOA feature is enabled (EN_OOA=1b) to avoid audible noise.
9.3.15 Switching Frequency and Dithering Feature
Normally, the IC switches in fixed frequency which can be adjusted through PWM_FREQ register bit. The
Charger also support frequency dithering function to improve EMI performance. This function is disabled by
default with setting EN_DITHER=00b. It can be enabled by setting EN_DITHER=01/10/11b, the switching
frequency is not fixed when dithering is enabled. It varies within determined range by EN_DITHER setting,
01/10/11b is corresponding to ±2%/4%/6% switching frequency. Please contact factory for more detail
information.
9.3.16 Current and Power Monitor
9.3.16.1 High-Accuracy Current Sense Amplifier (IADPT and IBAT)
A high-accuracy current sense amplifier (CSA) is used to monitor the input current during forward charging, or
output current during OTG (IADPT) and the charge/discharge current (IBAT). IADPT voltage is 20× or 40× the
differential voltage across ACP and ACN. IBAT voltage is 8×/16× of the differential across SRP and SRN. After
input voltage or battery voltage is above UVLO, IADPT output becomes valid. To lower the voltage on current
monitoring, a resistor divider from CSA output to GND can be used and accuracy over temperature can still be
achieved.
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•
VIADPT = 20 or 40 × (VACP – VACN) during forward mode, or 20 or 40 × (VACN – VACP) during reverse OTG
mode.
•
•
VIBAT = 8 or 16 × (VSRP – VSRN) during forward charging mode.
VIBAT = 8 or 16 × (VSRN – VSRP) during forward supplement mode, reverse OTG mode and battery only
discharge scenario.
A maximum 100-pF capacitor is recommended to connect on the output for decoupling high-frequency noise. An
additional RC filter is optional. Note that RC filtering has additional response delay. The CSA output voltage is
clamped at 3.3 V.
9.3.16.2 High-Accuracy Power Sense Amplifier (PSYS)
The charger monitors total system power. During forward mode, the input adapter powers the system. During
reverse OTG mode and battery only discharge scenario, the battery powers the system and VBUS output. The
ratio of PSYS pin output current and total system power, KPSYS, can be programmed in PSYS_RATIO register
bit with default 1 μA/W. The input and charge sense resistors (RAC and RSR) are selected in RSNS_RAC bit and
RSNS_RSR bit. By default, PSYS_CONFIG=00b and PSYS voltage can be calculated with Equation 1, where
IIN>0 when the charger is in forward charging and IIN<0 when charger is in OTG operation; where IBAT>0 when
the battery is in charging and IBAT<0 when battery is discharging.
VPSYS =RPSYS·KPSYS(VACP·IIN+VSYS·IBAT
)
(1)
RAC and RSR values are not limited to symmetrical both 5 mΩ or both 10 mΩ. For defined current sense resistors
(10 mΩ/5 mΩ), PSYS function is still valid when RAC=5 mΩ(RSNS_RAC=1b) and RSR=10 mΩ(RSNS_RAC=0b),
vice versa. As long as RSNS_RAC and RSNS_RSR bit status are consistent with practical resistors used in the
system.
Charger can block IBAT contribution to above equation by setting PSYS_CONFIG =01b in forward mode and
block IBUS contribution to above equation by setting PSYS_OTG_IDCHG=1b in OTG mode.
To minimize the quiescent current, the PSYS function is disabled by default PSYS_CONFIG = 11b.
Table 9-6. PSYS Configuration Table
OTG
MODE PSYS
PSYS_OTG_IDCHG
BITS
FORWARD MODE PSYS
CONFIGURATION
CASE #
PSYS_CONFIG BITS
CONFIGURATION
1
00b
00b
01b
11b
10b
0b
1b
Xb
Xb
Xb
PSYS = PBUS+PBAT
PSYS = PBUS+PBAT
PSYS = PBUS
PSYS = PBUS + PBAT
PSYS =PBAT
2
3
PSYS = 0
4
PSYS = 0 (Disabled)
PSYS = 0 (Reserved)
PSYS = 0 (Disabled)
PSYS = 0 (Reserved)
5 (Reserved)
9.3.17 Input Source Dynamic Power Management
The charger supports Dynamic Power Management (DPM). Normally, the input power source provides power for
the system load and/or charging the battery. When the input current exceeds the input current setting (IIN_DPM),
or the input voltage falls below the input voltage setting (VINDPM), the charger decreases the charge current to
provide priority to the system load. As the system current rises, the available charge current drops accordingly
towards zero. If the system load keeps increasing after the charge current drops down to zero, the system
voltage starts to drop. As the system voltage drops below the battery voltage, the battery will discharge to
supplement the heavy system load.
9.3.18 Input Current Optimizer (ICO)
For a recognized input adapter, IINDPM can be configured precisely to prevent adapter collapasing. When a
third party unknown adapter is used, then input voltage regulation (VINDPM) feature can be leveraged to prevent
input crash. With the increasing of input current, voltage drops along the input cable also increases and voltage
measured it charger input port decreases accordingly. VINDPM feature can limit input power from adapter by
regulating VBUS at certain value configured at InputVoltage register(0x0Bh/0Ah[]). However, the adapter may
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still overheat when it is kept running at its voltage limit for a long period of time. Therefore, it is preferred to
operate the third party adapter slightly under its current rating. The Input Current Optimizer (ICO) feature can
automatically maximize the power of unknown input adapter without continuously working under VINDPM. Note
the ICO feature can only be employed when the adapter input current limit is at least 500 mA. Please contact
factory for more detail information about ICO feature.
9.3.19 Two-Level Adapter Current Limit (Peak Power Mode)
Usually adapter can supply current higher than DC rating for a few milliseconds to tens of milliseconds. The
charger employs two-level input current limit, or peak power mode, to fully utilize the overloading capability
and minimize battery discharge during system load transient. The level 1 current limit, or ILIM1, is the same as
adapter DC current, set in IIN_DPM register. The level 2 overloading current, or ILIM2, is set in ILIM2_VTH, as a
percentage of ILIM1
.
When the charger detects input current surge and battery discharge due to load transient (both the adapter
and battery support the system together), or when the charger detects the system voltage starts to drop below
VSYS_MIN setting due to load transient (only the adapter supports the system), the charger will first apply ILIM2
for TOVLD (PKPWR_TOVLD_DEG register bits), and then ILIM1 for up to TMAX – TOVLD time. TMAX is programmed
in PKPWR_TMAX register bits. After TMAX, if the load is still high, another peak power cycle starts. Charging is
disabled during TMAX and TOVLD already expires; once TMAX, expires, a new cycle starts and resumes charging
automatically.
To prepare entering peak power follow below steps:
•
•
•
•
•
Set EN_IIN_DPM=1b to enable input current dynamic power management.
Set EN_EXTILIM=0b to disable external current limit.
Set register IIN_HOST based on adapter output current rating as the level 1 current limit(ILIM1
Set register bits ILIM2_VTH according to the adapter overload capability as the level 2 current limit(ILIM2) .
Set register bits PKPWR_TOVLD_DEG as ILIM2 effective duration time for each peak power mode operation
cycle based on adapter capability.
)
•
Set register bits PKPWR_TMAX as each peak power mode operation cycling time based on adapter
capability.
Depends on the battery existence and charge status peak power mode can be finally enabled with two different
approaches:
•
When battery is depleted in which VBAT is lower than VSYS_MIN setting or battery is removed, host need
to set EN_PKPWR_VSYS=1b to enable peak power mode triggered by system voltage undershoot. The
under-shoot threshold is the VSYS_MIN register setting which is the system regulation point before load
transient happens. Typical application waveform refer to Figure 10-22.
•
When battery is not depleted in which VBAT is higher than VSYS_MIN setting, host need to set
EN_PKPWR_IIN_DPM=1b to enable peak power mode triggered by input current overshoot. The overshoot
threshold is IIN_DPM register which is same as the level 1 current limit (ILIM1). Typical application waveform
refer to Figure 10-23.
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ICRIT_DEG
ICRIT
ILIM2
ILIM1
TOVLD
TOVLD
TMAX
IBUS
ISYS
IBAT
0A
Ba ery Discharge
PROCHOT_WIDTH
PROCHOT
Figure 9-3. Two-Level Adapter Current Limit Timing Diagram
9.3.20 Processor Hot Indication
The events monitored by the processor hot function includes:
•
•
•
•
ICRIT: adapter peak current, as 110% of ILIM2
INOM: adapter average current (110% of IIN_DPM)
IDCHG1: battery discharge current level 1
IDCHG2: battery discharge current level 2, note IDCHG2 threshold is always larger than IDCHG1 threshold
determined by IDCHG_TH2 register setting.
•
•
•
VBUS_VAP: VBUS threshold to trigger PROCHOT in VAP mode 2 and 3.
VSYS: system voltage on VSYS pin
Adapter Removal: upon adapter removal (VBUS is lower than ACOK_TH=3.2 V same as VVBUS_CONVENZ
threshold)
•
•
•
Battery Removal: upon battery removal (CELL_BATPRESZ pin goes LOW)
CMPOUT: Independent comparator output (CMPOUT pin HIGH to LOW)
VINDPM: VBUS lower than 83%/91%/100% of VINDPM setting. The effective threshold PROCHOT_VINDPM
is determined by combination of register PROCHOT_VINDPM_80_90 bit and LOWER_PROCHOT_VINDPM
bit:
– PROCHOT_VINDPM=VINDPM register setting: LOWER_PROCHOT_VINDPM=0b;
– PROCHOT_VINDPM=83% VINDPM register setting:
LOWER_PROCHOT_VINDPM=1b;PROCHOT_VINDPM_80_90=0b;
– PROCHOT_VINDPM=91% VINDPM register setting:
LOWER_PROCHOT_VINDPM=1b;PROCHOT_VINDPM_80_90=1b;
EXIT_VAP: Every time when the charger exits VAP mode.
•
The threshold of ICRIT, IDCHG1,IDCHG2,VSYS or VINDPM, and the deglitch time of ICRIT, INOM, IDCHG1,
IDCHG2, or CMPOUT are programmable through I2C register bits. Except the PROCHOT_EXIT_VAP is always
enabled, the other triggering events can be individually enabled in ProchotOption1[7:0], PP_IDCHG2 and
PP_VBUS_VAP. When any enabled event in PROCHOT profile is triggered, PROCHOT is asserted low for
a single pulse with minimal width programmable in PROCHOT_WIDTH register bits. At the end of the single
pulse, if the PROCHOT event is still active, the pulse gets extended until the event is removed.
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If the PROCHOT pulse extension mode is enabled by setting EN_PROCHOT_EXT= 1b, the PROCHOT pin will
be kept low until host writes PROCHOT_CLEAR= 0b, even if the triggering event has been removed.
If the PROCHOT_VINDPM or PROCHOT_EXIT_VAP is triggered, PROCHOT pin will always stay low until
the host clears it, no matter the PROCHOT is in one pulse mode or in extended mode. In order to clear
PROCHOT_VINDPM, host needs to write 0 to STAT_VINDPM. In order to clear PROCHOT_EXIT_VAP, host
needs to write 0 to STAT_EXIT_VAP.
PP_ICRIT
IADPT
+
ICRIT
Adjustable
Deglitch
Low Pass
Filter
PP_INOM
+
EXIT_VAP
(triggered by IN_VAP
falling edge)
INOM
1.05V
PP_IDCHG2
IDCHG2
IDCHG1
+
IDCHG_VTH2
PP_IDCHG1
PROCHOT
+
IDCHG_VTH1
VSYS_VTH2
10ms
Debounce
PP_VSYS
+
VSYS
VBUS
10ms
Fixed
Deglitch
4us
PP_VINDPM
A*VINDPM
+
Fixed
Deglitch
4us
PP_VBUS_VAP
PP_ACOK
VBUS_VAP_TH
+
VVBUS_CONVENZ
PP_CMP
PP_BATPRES
CELL_BATPRESZ
(one shot on pin falling edge)
VBUS
(one shot on pin falling edge)
CMPOUT
Figure 9-4. PROCHOT Profile
9.3.20.1 PROCHOT During Low Power Mode
During low power mode (EN_LWPWR = 1), the charger offers a low power PROCHOT function with very low
quiescent current consumption (~35 μA), which uses the independent comparator to monitor the system voltage,
and assert PROCHOT to CPU if the system power is too high and resulting system voltage is lower than specific
threshold.
Below lists the register setting to enable PROCHOT monitoring system voltage in low power mode.
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•
•
•
•
•
EN_LWPWR = 1b to enable charger low power mode.
REG0x34[7:0] = 00h
REG0x30[6:4] = 000b
Independent comparator threshold is always 1.2 V
When EN_PROCHOT_LPWR = 1b, charger monitors system voltage. Connect CMPIN to voltage
proportional to system voltage. PROCHOT triggers from HIGH to LOW when CMPIN voltage rises above
1.2 V.
PROCHOT
1.2 V
Independent
Comparator
CMPIN
Voltage îVSYS
Figure 9-5. PROCHOT Low Power Mode Implementation
9.3.20.2 PROCHOT Status
report which event in the profile triggers PROCHOT if the corresponding bit is set to 1. The status bit can be
reset back to 0 after it is read by the host, when the current PROCHOT event is not active any more.
Assume there are two PROCHOT events, event A and event B. Event A triggers PROCHOT first, but event B
is also active. Both status bits will be HIGH. At the end of the 10-ms PROCHOT pulse, if any of the PROCHOT
event is still active (either A or B), the PROCHOT pulse is extended.
9.3.21 Device Protection
9.3.21.1 Watchdog Timer
The charger includes a watchdog timer to terminate charging if the charger does not receive a
write ChargeVoltage() or write ChargeCurrent() command within 175s (default value and adjustable via
WDTMR_ADJ). When watchdog timeout occurs, all register values are kept unchanged except ChargeCurrent()
resets to 0 A . Write ChargeVoltage() or write ChargeCurrent() commands must be resent to reset watchdog
timer. Writing WDTMR_ADJ = 00b to disable watchdog timer or update new watchdog timer values can also
reset watchdog timer. New non-zero charge current value has to be written to ChargeCurrent() register to
resume charging after watchdog timer expires.
9.3.21.2 Input Overvoltage Protection (ACOV)
The charger has fixed ACOV voltage threshold with hysteresis. When VBUS pin voltage is higher than
VACOV_RISE for more than 100 μs, it is considered as adapter overvoltage. CHRG_OK pin will be pulled low
by the charger, and the converter will be disabled. As system falls below battery voltage, BATFET will be turned
on. When VBUS pin voltage falls below VACOV_FALL for more than 1 ms, it is considered as adapter voltage
returns back to normal voltage. CHRG_OK pin is pulled high by external pull-up resistor. The converter resumes
if enable conditions are valid.
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9.3.21.3 Input Overcurrent Protection (ACOC)
If the input current exceeds the 1.33× or 2× of ILIM2_VTH set point ACOC_TH (adjustable through ACOC_VTH),
after 250-μs rising edge de-glitch time converter stops switching because of input overcurrent protection
(ACOC). ACOC is a non-latch fault, if input current falls below set point, after 250-ms falling edge de-glitch
time converter starts switching again. ACOC is disabled by default and need to be enabled by configuring
EN_ACOC=1b. When ACOC is triggered, its corresponding status bit Fault ACOC will be set and it can be
cleared by host read.
9.3.21.4 System Overvoltage Protection (SYSOVP)
When the converter starts up, the BQ25730 reads CELL_BATPRESZ pin configuration and sets ChargeVoltage()
and SYSOVP threshold (1s – 6 V, 2s – 12 V, 3s/4s – 19.5 V and 5s – 25 V ). Before ChargeVoltage() is written
by the host, the battery configuration will change with CELL pin voltage. When SYSOVP happens, the device
latches off the converter. Fault SYSOVP status bit is set to 1. The user can clear latch-off by either writing 0
to the Fault SYSOVP status bit or removing and plugging in the adapter again. After latch-off is cleared, the
converter starts again.
9.3.21.5 Battery Overvoltage Protection (BATOVP)
Battery overvoltage may happen when user plugs in a wrong battery or a wrong regulation voltage is written
into ChargeVoltage() register. The BATOVP rising threshold is 104% of regulation voltage set in ChargeVoltage()
register, and falling threshold is 102% of regulation voltage set in ChargeVoltage() register. When BATOVP rising
condition is triggered: if charge is enabled (charge current is not 0A) converter should shut down with both
HS MOSFET and LS MOSFET turned off; if charge is disabled the converter should keep operating without
disturbance until battery rise up system voltage to be high enough trigger SYSOVP. There is no user status bit
to monitor. Note VBAT voltage used for BATOVP detection is based on SRN pin measurement. When BATOVP
is triggered with charge enabled, 40-mA discharge current is added on VSYS pin will help discharge battery
voltage.
9.3.21.6 Battery Discharge Overcurrent Protection (BATOC)
The charger monitors the battery discharge current to provide the battery overcurrent protection (BATOC)
through voltage across SRN and SRP. BATOC can be enabled by configuring EN_BATOC=1b. BATOC threshold
is selected either 133% of IDCHG_TH2 or 200% IDCHG_TH2 through BATOC_VTH bit. The threshold is also
clamped between 100 mV and 360 mV SRN-SRP cross voltage.
When discharge current is higher than the threshold after 250-μs deglitch time, BATOC fault is triggered, status
bit Fault BATOC is set accordingly. Converter shuts down when BATOC is asserted to disable OTG operation
and reduce discharge current. BATFET status is not impacted if need to supplement power to system.
BATOC is not a latch fault, therefore after BATOC fault is removed, with 250-ms relax time, converter resume
switching automatically. But status bit Fault BATOC is only cleared by host read.
9.3.21.7 Battery Short Protection (BATSP)
For multicell operation, if BAT voltage falls below VSYS_MIN during charging, the maximum charger current
is limited to 384 mA. For single-cell operation, if BAT voltage falls below 3.0 V during charging, the maximum
charge current is limited to 384 mA; if BAT voltage is between 3.0 V and VSYS_MIN then maximum charge
current is limited to 2 A. Note VBAT voltage used for battery short detection is based on SRN pin measurement.
9.3.21.8 System Undervoltage Lockout (VSYS_UVP) and Hiccup Mode
The charger VSYS_UVP is enabled by POR ( VSYS_UVP_ENZ=0b) and can be disabled by writing
VSYS_UVP_ENZ=1b. This protection is mainly defined to protect converter from system short circuit under
both startup and steady state process. VSYS pin is used to monitor the system voltage, when VSYS is lower
than 2.4 V (configurable through VSYS_UVP register bits), there is 2-ms deglitch time, the IIN_DPM is clamped
to 0.5 A by the charger itself.
If hiccup mode is enabled with VSYS_UVP_NO_HICCUP = 0b, after 2-ms deglitch time, the charger should shut
down for 500 ms.The charger will restart for 10 ms if VSYS is still lower than 2.4 V, the charger should shut
down again. This hiccup mode will be tried continuously, if the charger restart failed for 7 times in 90 second, the
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charger will be latched off. Fault VSYS_UVP bit will be set to 1 to report a system short fault. The charger only
can be enabled again by writing Fault VSYS_UVP bit to 0b.
If hiccup mode is disabled VSYS_UVP_NO_HICCUP = 1b. After 2-ms deglitch time, the charger should shut
down and latched off. Fault VSYS_UVP bit will be set to 1 to report a system short fault. The charger only can be
enabled again once the host writes Fault VSYS_UVP bit to 0b.
9.3.21.9 Thermal Shutdown (TSHUT)
The WQFN package has low thermal impedance, which provides good thermal conduction from the silicon to
the ambient, to keep junction temperatures low. As added level of protection, the charger converter turns off for
self-protection whenever the junction temperature reaches the 155°C. The charger stays off until the junction
temperature falls below 135°C. During thermal shut down, the REGN LDO current limit is reduced to 16 mA and
stays on. When the temperature falls below 135°C, charge can be resumed with soft start.
When thermal shut down is triggered, TSHUT status bit will be triggered. This status bit keep triggered until host
read to clear it. If TSHUT is still present during host read, then this bit will try to be cleared when host read but
finally keep triggered because TSHUT still exists.
9.4 Device Functional Modes
9.4.1 Forward Mode
When input source is connected to VBUS, BQ25730 is in forward mode to regulate system and charge battery.
9.4.1.1 System Voltage Regulation with Narrow VDC Architecture
The device employs Narrow VDC architecture (NVDC) with BATFET separating the system from the battery. The
minimum system voltage is set by VSYS_MIN register REG0x0D/0C(). Even with a depleted battery, the system
is regulated above the minimum system voltage.
When the battery is below minimum system voltage setting, the BATFET operates in linear mode (LDO mode),
and the system is regulated at VSYS_MIN register value. As the battery voltage rises above the minimum
system voltage, system voltage is regulated 150 mV above battery voltage when BATFET is turned off (no
charging or no supplement current). When in charging or in supplement mode, the voltage difference between
the system and battery is the VDS of the BATFET and the BATFET is fully on.
9.4.1.2 Battery Charging
The BQ25730 charges 1- to 5-cell battery in constant current (CC), and constant voltage (CV) mode. Based on
CELL_BATPREZ pin setting, the charger sets default battery voltage 4.2 V/cell to ChargeVoltage(). According
to battery capacity, the host programs appropriate charge current to ChargeCurrent() register. When battery is
full or battery is not in good condition to charge, host terminates charge by setting CHRG_INHIBIT bit to 1b, or
setting ChargeCurrent() to zero.
9.4.2 USB On-The-Go
The BQ25730 supports USB OTG functionality to deliver power from the battery to other portable devices
through USB port (reverse mode). The OTG output voltage is compliant with USB-C PD specification, including
5 V, 9 V, 15 V, and 20 V. The output current regulation is compliant with USB-C PD specification, including 500
mA, 1.5 A, 3 A and 5 A, and so forth.
Similar to forward operation, the device switches from PWM operation to PFM operation at light load to improve
efficiency.
9.4.3 Pass Through Mode (PTM)-Patented Technology
The charger can be operated in the pass through mode (PTM) to improve efficiency. In PTM, the Buck and Boost
high-side FETs (Q1 and Q4) are both turned on, while the Buck and Boost low-side FETs are both turned off.
The input power is directly passed through the charger to the system. The switching losses of MOSFETs and
the inductor core loss are saved. The charger quiescent current under PTM mode is also minimized to further
increase light load efficiency. Charger will be transition from normal Buck-Boost operation to PTM operation by
setting EN_PTM = 1b; and will transition out of PTM mode with host control by setting EN_PTM =0b. Please
contact factory for more detail information about PTM mode.
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9.5 Programming
The charger supports battery-charger commands that use either Write-Word or Read-Word protocols, as
summarized in Section 9.5.1.7. The I2C address is 6Bh(0b1101011) consist of 7 bits. Adding read(1b) and
write(0b) to the end of address 7bits, the total 8bits data format address should be D6h (1101011_0 for write)/
D7h(1101011_1 for read). The ManufacturerID and DeviceID registers are assigned to identify the charger
device. The ManufacturerID register command always returns 40h.
9.5.1 I2C Serial Interface
The BQ25730 uses I2C compatible interface for flexible charging parameter programming and instantaneous
device status reporting. I2C is a bi-directional 2-wire serial interface. Only two bus lines are required: a serial
data line (SDA) and a serial clock line (SCL). Devices can be considered as host or target when performing data
transfers. A host is the device which initiates a data transfer on the bus and generates the clock signals to permit
that transfer. At that time, any device addressed is considered a target device.
The device operates as a target device with address D6h, receiving control inputs from the host device like micro
controller or a digital signal processor through REG00-REG3F. The I2C interface supports both standard mode
(up to 100 kHz), and fast mode (up to 400 kHz). connecting to the positive supply voltage via a current source or
pull-up resistor. When the bus is free, both lines are HIGH. The SDA and SCL pins are open drain.
9.5.1.1 Timing Diagrams
SCL
SDA
A = Start condition
H = LSB of data clocked into target
I = Target pulls SDA line low
B = MSB of address clocked into target
C = LSB of address clocked into target
D = R/W bit clocked into target
E = Target pulls SDA line low
J = Acknowledge clocked into host
K = Acknowledge clock pulse
L = Stop condition, data executed by target
M = New start condition
F = ACKNOWLEDGE bit clocked into host
G = MSB of data clocked into target
Figure 9-6. I2C Write Timing
SCL
SDA
A = Start condition
G = MSB of data clocked into host
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B = MSB of address clocked into target
C = LSB of address clocked into target
D = R/W bit clocked into target
H = LSB of data clocked into host
I = Acknowledge clock pulse
J = Stop condition
E = Target pulls SDA line low
K = New start condition
F = ACKNOWLEDGE bit clocked into host
Figure 9-7. I2C Read Timing
9.5.1.2 Data Validity
The data on the SDA line must be stable during the HIGH period of the clock. The HIGH or LOW state of the
data line can only change when the clock signal on the SCL line is LOW. One clock pulse is generated for each
data bit transferred.
SDA
SCL
Data line stable;
Data valid
Change
of data
allowed
Figure 9-8. Bit Transfer on the I2C Bus
9.5.1.3 START and STOP Conditions
All transactions begin with a START (S) and can be terminated by a STOP (P). A HIGH to LOW transition on the
SDA line while SCL is HIGH defines a START condition. A LOW to HIGH transition on the SDA line when the
SCL is HIGH defines a STOP condition.
START and STOP conditions are always generated by the host. The bus is considered busy after the START
condition, and free after the STOP condition.
SDA
SCL
SDA
SCL
STOP (P)
START (S)
Figure 9-9. START and STOP Conditions
9.5.1.4 Byte Format
Every byte on the SDA line must be 8 bits long. The number of bytes to be transmitted per transfer is
unrestricted. Each byte has to be followed by an Acknowledge bit. Data is transferred with the Most Significant
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Bit (MSB) first. If a target cannot receive or transmit another complete byte of data until it has performed some
other function, it can hold the clock line SCL low to force the host into a wait state (clock stretching). Data
transfer then continues when the target is ready for another byte of data and release the clock line SCL.
Acknowledgement
Acknowledgement
signal from receiver
signal from slave
MSB
SDA
S or Sr
1
2
7
8
9
1
2
8
9
P or Sr
SCL
ACK
ACK
START or
Repeated
START
STOP or
Repeated
START
Figure 9-10. Data Transfer on the I2C Bus
9.5.1.5 Acknowledge (ACK) and Not Acknowledge (NACK)
The acknowledge takes place after every byte. The acknowledge bit allows the receiver to signal the transmitter
that the byte was successfully received and another byte may be sent. All clock pulses, including the
acknowledge 9th clock pulse, are generated by the host.
The transmitter releases the SDA line during the acknowledge clock pulse so the receiver can pull the SDA line
LOW and it remains stable LOW during the HIGH period of this clock pulse.
When SDA remains HIGH during the 9th clock pulse, this is the Not Acknowledge signal. The host can then
generate either a STOP to abort the transfer or a repeated START to start a new transfer.
9.5.1.6 Target Address and Data Direction Bit
After the START, a target address is sent. This address is 7 bits long followed by the eighth bit as a data
direction bit (bit R/W). A zero indicates a transmission (WRITE) and a one indicates a request for data (READ).
SDA
S
8
9
8
9
8
9
P
SCL
1-7
1-7
1-7
START
ADDRESS
R/W
ACK
DATA
ACK
DATA
ACK
STOP
Figure 9-11. Complete Data Transfer
9.5.1.7 Single Read and Write
Figure 9-12. Single Write
Figure 9-13. Single Read
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If the register address is not defined, the charger IC send back NACK and go back to the idle state.
9.5.1.8 Multi-Read and Multi-Write
The charger device supports multi-read and multi-write.
Figure 9-14. Multi Write
Figure 9-15. Multi Read
9.5.1.9 Write 2-Byte I2C Commands
A few I2C commands combine two 8-bit registers together to form a complete value. These commands include:
•
•
•
•
•
ChargeCurrent()
ChargeVoltage()
IIN_DPM()
OTGVoltage()
InputVoltage()
Host has to write LSB bit first and then move on to MSB bit. No other command can be inserted in between
these two writes. The charger waits for the complete write to the two registers to decide whether to accept or
ignore the new value.
After the completion of LSB and MSB bytes, the two bytes will be updated at the same time. If host writes MSB
byte first, the command will be ignored. If the time between write of LSB and MSB bytes exceeds watchdog
timer, both the LSB and MSB commands will be ignored.
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9.6 Register Map
Table 9-7. Charger Command Summary
I2C ADDR
(MSB/LSB)
REGISTER NAME
ChargeOption0()
TYPE
R/W
DESCRIPTION
LINKS
01/00h
03/02h
Charge Option 0
Go
Go
ChargeCurrent()
R/W
7-bit charge current setting
LSB 128 mA, Range 0 mA – 16256 mA
(RSR=5mΩ)
05/04h
ChargeVoltage()
R/W
12-bit charge voltage setting
Go
LSB 8 mV, Default: 1S-4200mV, 2S-8400mV,
3S-12600mV, 4S-16800mV, 5S-21000mV
07/06h
09/08h
OTGVoltage()
OTGCurrent()
R/W
R/W
12-bit OTG voltage setting
LSB 8 mV, Range: 3000 mV – 24000 mV
Go
Go
7-bit OTG output current setting
LSB 100 mA, Range: 0 A – 12700 mA
(RAC=5mΩ)
0B/0Ah
0D/0Ch
InputVoltage()
VSYS_MIN()
R/W
R/W
8-bit input voltage setting
LSB 64 mV, Range: 3200 mV – 19520 mV
Go
Go
8-Bit minimum system voltage setting
LSB: 100 mV, Range: 1000 mV - 23000 mV
Default: 1S-3.6V, 2S-6.6V, 3S-9.2V, 4S-12.3V,
5S-15.4V
0F/0Eh
IIN_HOST()
R/W
6-bit Input current limit set by host
LSB: 100-mA, Range: 100 mA - 10000 mA with
100 mA offset (RAC=5mΩ)
Go
21/20h
23/22h
25/24h
ChargerStatus()
ProchotStatus()
IIN_DPM()
R with R/W Charger Status
bits
Go
Go
Go
R and R/W Prochot Status
bits
R
7-bit input current limit in use
LSB: 50 mA, Range: 100 mA - 10000 mA
(RAC=5mΩ)
27/26h
29/28h
ADCVBUS/PSYS()
ADCIBAT()
R
8-bit digital output of input voltage,
Go
Go
8-bit digital output of system power
PSYS: Full range: 3.06 V, LSB: 12 mV
VBUS: Full range: 0 V - 24.48 V, LSB 96 mV
R
R
R
7-bit digital output of battery charge current,
7-bit digital output of battery discharge current
ICHG: Full range 16.256 A, LSB 128 mA
IDCHG: Full range: 65.024 A, LSB: 512 mA
(RSR=5mΩ)
2B/2Ah
2D/2Ch
ADCIINCMPIN()
ADCVSYSVBAT()
8-bit digital output of input current,
8-bit digital output of CMPIN voltage
POR State - IIN: Full range: 25.5 A, LSB 100 mA
(RAC=5mΩ)
Go
Go
CMPIN: Full range 3.06 V, LSB: 12 mV
8-bit digital output of system voltage,
8-bit digital output of battery voltage
VSYS: Full range: 2.88 V - 19.2 V, LSB: 64 mV
(1S-4S)
VSYS: Full range: 8.16 V - 24.48 V, LSB: 64 mV
(5S)
VBAT: Full range : 2.88 V - 19.2 V, LSB 64 mV
(1S-4S)
VBAT: Full range : 8.16 V - 24.48 V, LSB 64 mV
(5S)
2Eh
ManufacturerID()
DeviceID()
R
Manufacturer ID - 0x0040H
Device ID
Go
Go
Go
2Fh
R
31/30h
ChargeOption1()
R/W
Charge Option 1
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Table 9-7. Charger Command Summary (continued)
I2C ADDR
(MSB/LSB)
REGISTER NAME
TYPE
R/W
DESCRIPTION
33/32h
35/34h
37/36h
39/38h
3B/3Ah
3D/3Ch
3F/3Eh
ChargeOption2()
ChargeOption3()
Charge Option 2
Charge Option 3
Go
Go
Go
Go
Go
Go
Go
R/W
R/W
R/W
R/W
R/W
R/W
ProchotOption0()
ProchotOption1()
ADCOption()
PROCHOT Option 0
PROCHOT Option 1
ADC Option
ChargeOption4()
Vmin Active Protection()
Charge Option 4
Vmin Active Protection
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9.6.1 ChargeOption0 Register (I2C address = 01/00h) [reset = E70Eh]
Figure 9-14. ChargeOption0 Register (I2C address = 01/00h) [reset = E70Eh]
7
6
5
4
3
2
1
0
EN_LWPWR
WDTMR_ADJ
R/W
IIN_DPM_AUT OTG_ON_CH
EN_OOA
PWM_FREQ LOW_PTM_RIP
PLE
O_DISABLE
RGOK
R/W
7
R/W
R/W
R/W
R/W
1
R/W
0
6
5
4
3
2
EN_CMP_LAT VSYS_UVP_E
EN_LEARN
IADPT_GAIN
IBAT_GAIN
EN_LDO
EN_IIN_DPM CHRG_INHIBIT
CH
NZ
R/W
R/W
R/W
R/W
R/W
R/W
R/W R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-8. ChargeOption0 Register (I2C address = 01h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
EN_LWPWR
R/W
1b
Low Power Mode Enable, under low power mode lowest quiescent current is
achieved when only battery exist. It is not recommended to enable low power
mode when adapter present.
0b: Disable Low Power Mode. Device in performance mode with battery only.
The PROCHOT, current/power monitor buffer and comparator follow register
setting.
1b: Enable Low Power Mode. Device in low power mode with battery only
for lowest quiescent current. The REGN is off. The PROCHOT, discharge
current monitor buffer, power monitor buffer and independent comparator are
disabled. ADC is not available in Low Power Mode. Independent comparator
and its low power mode PROCHOT profile can be enabled by setting
EN_PROCHOT_LPWR bit to 1b. <default at POR>
6-5
WDTMR_ADJ
R/W
11b
WATCHDOG Timer Adjust
Set maximum delay between consecutive Host write of charge voltage or
charge current command.
If device does not receive a write on the REG0x15() or the REG0x14()
within the watchdog time period, the charger will be suspended by setting
the REG0x14() to 0 mA .
After expiration, the timer will resume upon the write of REG0x14(),
REG0x15() or REG0x12[14:13].
00b: Disable Watchdog Timer
01b: Enabled, 5 sec
10b: Enabled, 88 sec
11b: Enable Watchdog Timer, 175 sec <default at POR>
4
IIN_DPM_AUTO_DISAB R/W
LE
0b
IIN_DPM Auto Disable
When CELL_BATPRESZ pin is LOW, the charger automatically disables the
IIN_DPM function by setting EN_IIN_DPM (REG0x12[1]) to 0. The host can
enable IIN_DPM function later by writing EN_IIN_DPM bit (REG0x12[1]) to 1.
0b: Disable this function. IIN_DPM is not disabled when CELL_BATPRESZ
goes LOW. <default at POR>
1b: Enable this function. IIN_DPM is disabled when CELL_BATPRESZ goes
LOW.
3
OTG_ON_CHRGOK
R/W
0b
Add OTG to CHRG_OK
Drive CHRG_OK to HIGH when the device is in OTG mode.
0b: Disable <default at POR>
1b: Enable
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Table 9-8. ChargeOption0 Register (I2C address = 01h) Field Descriptions (continued)
BIT
FIELD
TYPE
RESET
DESCRIPTION
2
EN_OOA
R/W
1b
Out-of-Audio Enable
In both forward mode and OTG mode, switching frequency reduces with
diminishing load, under extreme light load condition the switching frequency
could be lower than 25 kHz which is already in audible frequency range. By
configuring EN_OOA=1b, the minimum PFM burst frequency is clamped at
around 25 kHz to avoid any audible noise.
0b: No limit of PFM burst frequency
1b: Set minimum PFM burst frequency to above 25 kHz to avoid audio noise
<default at POR>
1
0
PWM_FREQ
R/W
R/W
1b
1b
Switching Frequency Selection: Recommend 800 kHz with 2.2 µH, and 400
kHz with 4.7 µH.
0b: 800kHz
1b: 400 kHz<default at POR>
LOW_PTM_RIPPLE
PTM mode input voltage and current ripple reduction
0b: Disable
1b: Enable <default at POR>
Table 9-9. ChargeOption0 Register (I2C address = 00h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
EN_CMP_LATCH
R/W
0b
The EN_CMP_LATCH bit, will latch the independent comparator output after
it is triggered at low state. If enabled in PROCHOT profile REG34H[6]=1 ,
STAT_COMP bit REG0x21[6] keep 1b after triggered until read by host and
clear
0b: Independent comparator output will not latch when it is low<default at
POR>
1b: Independent comparator output will latch when it is low, host can clear
CMPOUT pin by toggling this REG0x12[7] bit.
6
5
VSYS_UVP_ENZ
EN_LEARN
R/W
R/W
0b
0b
To disable system under voltage protection.
0b: VSYS under voltage protection is enabled <default at POR>
1b: VSYS under voltage protection is disabled
LEARN mode allows the battery to discharge and converter to shut off while
the adapter is present . It calibrates the battery gas gauge over a complete
discharge/charge cycle. When the host determines the battery voltage is
below battery depletion threshold, the host switch the system back to adapter
input by writing this bit back to 0b.
0b: Disable LEARN Mode <default at POR>
1b: Enable LEARN Mode
4
3
IADPT_GAIN
IBAT_GAIN
R/W
R/W
0b
1b
IADPT Amplifier Ratio
The ratio of voltage on IADPT and voltage across ACP and ACN.
0b: 20× <default at POR>
1b: 40×
IBAT Amplifier Ratio
The ratio of voltage on IBAT and voltage across SRP and SRN
0b: 8×
1b: 16× <default at POR>
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Table 9-9. ChargeOption0 Register (I2C address = 00h) Field Descriptions (continued)
BIT
FIELD
TYPE
RESET
DESCRIPTION
2
EN_LDO
R/W
1b
LDO Mode Enable
When battery voltage is below minimum system voltage (REG0x3E()), the
charger is in pre-charge with LDO mode enabled.
0b: Disable LDO mode, BATFET fully ON. Precharge current is set by battery
pack internal resistor. The system is regulated by the MaxChargeVoltage
register.
1b: Enable LDO mode, Precharge current is set by the ChargeCurrent
register and clamped below 384 mA (2 cell – 4 cell, 1cell VBAT<3.0V) or 2A
(1cell 3.0V<VBAT<3.6V). The system is regulated by the VSYS_MIN register.
<default at POR>
1
0
EN_IIN_DPM
R/W
R/W
1b
0b
IIN_DPM Enable
Host writes this bit to enable IIN_DPM regulation loop. When the IIN_DPM
is disabled by the charger (refer to IIN_DPM_AUTO_DISABLE), this bit goes
LOW.
0b: IIN_DPM disabled
1b: IIN_DPM enabled <default at POR>
CHRG_INHIBIT
Charge Inhibit
When this bit is 0, battery charging will start with valid values in the
ChargeVoltage() register and the ChargeCurrent register.
0b: Enable Charge <default at POR>
1b: Inhibit Charge
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9.6.2 ChargeCurrent Register (I2C address = 03/02h) [reset = 0000h]
To set the charge current, write 16-bit ChargeCurrent() command (REG0x03/02h()) using the data format listed
Figure 9-15.
With 5-mΩ sense resistor, the charger provides charge current range of 0 A to 16.256 A, with a 128-mA step
resolution. With 10-mΩ sense resistor, the charger provides charge current range of 0 A to 8.128 A, with a
64-mA step resolution.
Upon POR, ChargeCurrent() is 0 A. Below scenarios will also reset Charge current to zero:
•
•
•
•
•
CELL_BATPRESZ going LOW (battery removal).
STAT_AC is not valid(Adapter removal).
RESET_REG is asserted and reset all registers.
Charge voltage is written to be 0 V.
Watch dog event is triggered.
Charge current is not reset in force converter latch off fault (REG0x20[2]), and ACOC/TSHUT/SYSOVP/ACOV/
VSYS_UVP/BATOVP/BATOC faults.
Figure 9-15. ChargeCurrent Register (I2C address = 03/02h) [reset = 0000h]
7
6
5
4
3
2
1
0
Reserved
Charge Current, Charge Current, Charge Current, Charge Current, Charge Current,
bit 6
R/W
4
bit 5
R/W
3
bit 4
bit 3
R/W
1
bit 2
R/W
0
R/W
6
R/W
7
5
2
Charge Current, Charge Current,
Reserved
Reserved
bit 1
bit 0
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-10. Charge Current Register with 5-mΩ Sense Resistor (I2C address = 03h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7-5
Reserved
R/W
000b
Not used. 1 = invalid write.
4
3
2
1
0
Charge Current, bit 6
Charge Current, bit 5
Charge Current, bit 4
Charge Current, bit 3
Charge Current, bit 2
R/W
R/W
R/W
R/W
R/W
0b
0b
0b
0b
0b
0 = Adds 0 mA of charger current.
1 = Adds 8192 mA of charger current.
0 = Adds 0 mA of charger current.
1 = Adds 4096 mA of charger current.
0 = Adds 0 mA of charger current.
1 = Adds 2048 mA of charger current.
0 = Adds 0 mA of charger current.
1 = Adds 1024 mA of charger current.
0 = Adds 0 mA of charger current.
1 = Adds 512 mA of charger current.
Table 9-11. Charge Current Register with 5-mΩ Sense Resistor (I2C address = 02h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
Charge Current, bit 1
R/W
0b
0 = Adds 0 mA of charger current.
1 = Adds 256 mA of charger current.
6
Charge Current, bit 0
Reserved
R/W
R/W
0b
0 = Adds 0 mA of charger current.
1 = Adds 128 mA of charger current.
5-0
000000b
Not used. Value Ignored.
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9.6.2.1 Battery Pre-Charge Current Clamp
During pre-charge, BATFET works in linear mode (LDO mode) (default EN_LDO= 1b). For 2-4 cell battery, the
system is regulated at VSYS_MIN register and the pre-charge current is clamped at 384 mA. For 1 cell battery,
the pre-charge to fast charge threshold is 3 V, and the pre-charge current is clamped at 384 mA. However, the
BATFET stays in LDO mode operation untill battery voltage is above minimum system voltage (~3.6 V). During
battery voltage from 3 V to 3.6 V, the fast charge current is clamped at 2 A.
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9.6.3 ChargeVoltage Register (I2C address = 05/04h) [reset value based on CELL_BATPRESZ pin setting]
To set the output charge voltage, write a 16-bit ChargeVoltage register command (REG0x05/04h()) using the
data format listed in Figure 9-16, Table 9-12, and Table 9-13. The charger provides charge voltage range from
1.024 V to 23.000 V, with 8-mV step resolution. Any write below 1.024 V or above 23.000 V is ignored.
Upon POR, ChargeVoltage() is by default set as 4200 mV for 1 s, 8400 mV for 2 s, 12600 mV for 3 s or 16800
mV for 4 s, 21000 mV for 5s. After CHRG_OK goes high, the charge will start when the host writes the charging
current to ChargeCurrent() register, the default charging voltage is used if ChargeVoltage() is not programmed. If
the battery is different from 4.2 V/cell, the host has to write to ChargeVoltage() before ChargeCurrent() register
for correct battery voltage setting. Writing ChargeVoltage() to 0 should keep ChargeVoltage() value unchanged,
and force ChargeCurrent() register to zero to disable charge.
The SRN pin senses the battery voltage for voltage regulation and should be connected as close to the battery
as possible.
Figure 9-16. ChargeVoltage Register (I2C address = 05/04h) [reset value based on CELL_BATPRESZ pin
setting]
7
6
5
4
3
2
1
0
Reserved
Charge Voltage, Charge Voltage, Charge Voltage, Charge Voltage, Charge Voltage, Charge Voltage, Charge Voltage,
bit 11
R/W
6
bit 10
R/W
5
bit 9
R/W
4
bit 8
R/W
3
bit 7
R/W
2
bit 6
bit 5
R/W
0
R/W
7
R/W
1
Charge Voltage, Charge Voltage, Charge Voltage, Charge Voltage, Charge Voltage,
Reserved
bit 4
bit 3
bit 2
bit 1
bit 0
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-12. ChargeVoltage Register (I2C address = 05h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
Reserved
R/W
0b
Not used. 1 = invalid write.
6
5
4
3
2
1
0
Charge Voltage, bit 11
Charge Voltage, bit 10
Charge Voltage, bit 9
Charge Voltage, bit 8
Charge Voltage, bit 7
Charge Voltage, bit 6
Charge Voltage, bit 5
R/W
R/W
R/W
R/W
R/W
R/W
R/W
0b
0b
0b
0b
0b
0b
0b
0 = Adds 0 mV of charger voltage.
1 = Adds 16384 mV of charger voltage.
0 = Adds 0 mV of charger voltage.
1 = Adds 8192 mV of charger voltage
0 = Adds 0 mV of charger voltage.
1 = Adds 4096 mV of charger voltage.
0 = Adds 0 mV of charger voltage.
1 = Adds 2048 mV of charger voltage.
0 = Adds 0 mV of charger voltage.
1 = Adds 1024 mV of charger voltage.
0 = Adds 0 mV of charger voltage.
1 = Adds 512 mV of charger voltage.
0 = Adds 0 mV of charger voltage.
1 = Adds 256 mV of charger voltage.
Table 9-13. ChargeVoltage Register (I2C address = 04h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
Charge Voltage, bit 4
R/W
0b
0 = Adds 0 mV of charger voltage.
1 = Adds 128 mV of charger voltage.
6
Charge Voltage, bit 3
R/W
0b
0 = Adds 0 mV of charger voltage.
1 = Adds 64 mV of charger voltage.
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Table 9-13. ChargeVoltage Register (I2C address = 04h) Field Descriptions (continued)
BIT
FIELD
TYPE
RESET
DESCRIPTION
5
Charge Voltage, bit 2
R/W
0b
0 = Adds 0 mV of charger voltage.
1 = Adds 32 mV of charger voltage.
4
3
Charge Voltage, bit 1
Charge Voltage, bit 0
Reserved
R/W
R/W
R/W
0b
0 = Adds 0 mV of charger voltage.
1 = Adds 16 mV of charger voltage.
0b
0 = Adds 0 mV of charger voltage.
1 = Adds 8 mV of charger voltage.
2-0
000b
Not used. Value Ignored.
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9.6.4 ChargerStatus Register (I2C address = 21/20h) [reset = 0000h]
Figure 9-17. ChargerStatus Register (I2C address = 21/20h) [reset = 0000h]
7
6
5
4
3
2
1
0
STAT_AC
ICO_DONE
IN_VAP
IN_VINDPM
IN_IIN_DPM
IN_FCHRG
IN_PCHRG
IN_OTG
R
R
R
R
4
R
3
R
2
R
1
R
0
7
6
5
Fault ACOV
Fault BATOC
Fault ACOC
FAULT
SYSOVP
Fault VSYS
_UVP
Fault
Force_Converte
r_Off
Fault_OTG
_OVP
Fault_OTG
_UVP
R
R
R
R/W
R/W
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-14. ChargerStatus Register (I2C address = 21h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
STAT_AC
R
0b
Input source status. STAT_AC is valid as long as VBUS go within
3.5-V to 26-V range. It is different from CHRG_OK bit, When
CHRG_OK is valid, STAT_AC must be valid, but if STAT_AC is valid,
it is not necessary CHRG_OK is valid. There are Force converter
off, ACOC, TSHUT , SYSOVP, VSYS_UVP, BATOVP can pull low
CHRG_OK.
0b: Input not present
1b: Input is present
6
5
ICO_DONE
IN_VAP
R
R
0b
0b
After the ICO routine is successfully executed, the bit goes 1.
0b: ICO is not complete
1b: ICO is complete
0b: Charger is not operated in VAP mode
1b: Charger is operated in VAP mode
Digital status bit indicates VAP has enabled(1) or disabled(0). The
enable of VAP mode only follows the host command, which is not
blocked by any status of /PROCHOT. The exit of VAP mode also
follows the host command, except that any faults will exit VAP mode
automatically. STAT_EXIT_VAP (REG0x21[8]) becomes 1 which will
pull low /PROCHOT until host clear.
The host can enable VAP by setting OTG/VAP/FRS pin high and
0x32[5]=0, disable VAP by setting either OTG/VAP/FRS pin low
or 0x32[5]=1. Any faults in VAP When IN_VAP bit goes 0->1,
charger should disable VINDPM, IIN_DPM, ICRIT, ILIM pin, disable
PP_ACOK if it is enabled, enable PP_VSYS if it is disabled. When
IN_VAP bit goes 1->0, charger should enable VINDPM, IIN_DPM,
ICRIT, ILIM pin function.
4
IN_VINDPM
R
0b
0b: Charger is not in VINDPM during forward mode, or voltage
regulation during OTG mode
1b: Charger is in VINDPM during forward mode, or voltage
regulation during OTG mode
3
2
1
IN_IIN_DPM
IN_FCHRG
IN_PCHRG
R
R
R
0b
0b
0b
0b: Charger is not in IIN_DPM during forward mode.
1b: Charger is not in IIN_DPM during forward mode.
0b: Charger is not in fast charge
1b: Charger is in fast charger
0b: Charger is not in pre-charge
1b: Charger is in pre-charge
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Table 9-14. ChargerStatus Register (I2C address = 21h) Field Descriptions (continued)
BIT
FIELD
TYPE
RESET
DESCRIPTION
0
IN_OTG
R
0b
0b: Charger is not in OTG
1b: Charge is in OTG
Table 9-15. ChargerStatus Register (I2C address = 20h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
Fault ACOV
R
0b
The status are latched if triggered until a read from host.
0b: No fault
1b: ACOV
6
Fault BATOC
R
0b
The status is latched if triggered until a read from host. Fault
indicator for BATOC only during normal operation. However, in PTM
mode when EN_BATOC=1b, this status bit is fault indicator for both
BATOVP and BATOC; when EN_BATOC=0b, this status bit is not
effective.
0b: No fault
1b: BATOC is triggered
5
4
Fault ACOC
R
0b
0b
The status is latched if triggered until a read from host.
0b: No fault
1b: ACOC
Fault SYSOVP
R/W
SYSOVP Status and Clear. SYSOVP fault is latched until a clear
from host by writing this bit to 0.
When the SYSOVP occurs, this bit is HIGH. During the SYSOVP, the
converter is disabled.
After the SYSOVP is removed, the user must write a 0 to this bit
or unplug the adapter to clear the SYSOVP condition to enable the
converter again.
0b: Not in SYSOVP <default at POR>
1b: In SYSOVP. When SYSOVP is removed, write 0 to clear the
SYSOVP latch.
3
2
Fault VSYS_UVP
R/W
0b
0b
VSYS_UVP fault status and clear. VSYS_UVP fault is latched until a
clear from host by writing this bit to 0.
0b: No fault <default at POR>
1b: When system voltage is lower than VSYS_UVP, then 7 times
restart tries are failed.
Fault Force_Converter_Off
R
The status is latched if triggered until a read from host.
0b: No fault
1b: Force converter off triggered (when FORCE_CONV_OFF
(REG0x30[3])=1b)
1
0
Fault_OTG_OVP
Fault_OTG_UVP
R
R
0b
0b
The status is latched if triggered until a read from host.
0b: No fault
1b: OTG OVP fault is triggered
The status is latched if triggered until a read from host.
0b: No fault
1b: OTG UVP fault is triggered
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9.6.5 ProchotStatus Register (I2C address = 23/22h) [reset = B800h]
All the status bits in REG0x23[7,2],REG0x23[6:0] will be cleared after host read.
Figure 9-18. ProchotStatus Register (I2C address = 23/22h) [reset = B800h]
7
6
5
4
3
2
1
0
Reserved
EN_PROCHOT
_EXT
PROCHOT_WIDTH
PROCHOT_CL
EAR
Reserved
STAT_VAP_FAI STAT_EXIT_VA
L
R/W
1
P
R/W
0
R
7
R/W
6
R/W
R/W
R
5
4
3
2
STAT_VINDPM STAT_COMP
STAT_ICRIT
STAT_INOM
STAT_IDCHG1
STAT_VSYS
STAT_BAT_Re STAT_ADPT_R
moval
emoval
R/W
R
R
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-16. ProchotStatus Register (I2C address = 23h) Field Descriptions
BIT
7
FIELD
TYPE
RESET
DESCRIPTION
Reserved
R
1b
Reserved
6
EN_PROCHOT _EXT
R/W
0b
PROCHOT Pulse Extension Enable. When pulse extension is
enabled, keep the PROCHOT pin voltage LOW until host writes
PROCHOT _CLEAR = 0b.
0b: Disable pulse extension <default at POR>
1b: Enable pulse extension
5-4
PROCHOT _WIDTH
PROCHOT _CLEAR
R/W
R/W
11b
PROCHOT Pulse Width Minimum PROCHOT pulse width when
EN_PROCHOT _EXT = 0b
00b: 100 us
01b: 1 ms
10b: 5 ms
11b: 10 ms <default at POR>
3
1b
PROCHOT Pulse Clear.
Clear PROCHOT pulse when EN_PROCHOT _EXT = 1b.
0b: Clear PROCHOT pulse and drive PROCHOT pin HIGH
1b: Idle <default at POR>
2
1
TSHUT
R
0b
0b
TSHUT trigger:
0b: TSHUT is not triggered
1b: TSHUT is triggered
STAT_VAP_FAIL
R/W
This status bit reports a failure to load VBUS 7 consecutive times
in VAP mode, which indicates the battery voltage might be not
high enough to enter VAP mode, or the VAP loading current
settings are too high.
0b: Not is VAP failure <default at POR>
1b: In VAP failure, the charger exits VAP mode, and latches off
until the host writes this bit to 0.
0
STAT_EXIT_VAP
R/W
0b
When the charger is operated in VAP mode, it can exit VAP
by either being disabled through host, or there are ACOV/ACOC/
SYSOVP/BATOVP/VSYS_UVP faults.
0b: PROCHOT_EXIT_VAP is not active <default at POR>
1b: PROCHOT_EXIT_VAP is active, PROCHOT pin is low until
host writes this status bit to 0.
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Table 9-17. ProchotStatus Register (I2C address = 22h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
STAT_VINDPM
R/W
0b
PROCHOT Profile VINDPM status bit
0b: Not triggered
1b: Triggered, PROCHOT pin is low until host writes this status bit
to 0 when PP_VINDPM = 1b
6
5
4
3
2
1
0
STAT_COMP
R
R
R
R
R
R
R
0b
0b
0b
0b
0b
0b
0b
PROCHOT Profile CMPOUT status bit. The status is latched until
a read from host.
0b: Not triggered
1b: Triggered
STAT_ICRIT
PROCHOT Profile ICRIT status bit. The status is latched until a
read from host.
0b: Not triggered
1b: Triggered
STAT_INOM
PROCHOT Profile INOM status bit. The status is latched until a
read from host.
0b: Not triggered
1b: Triggered
STAT_IDCHG1
STAT_VSYS
PROCHOT Profile IDCHG1 status bit. The status is latched until a
read from host.
0b: Not triggered
1b: Triggered
PROCHOT Profile VSYS status bit. The status is latched until a
read from host.
0b: Not triggered
1b: Triggered
STAT_Battery_Removal
STAT_Adapter_Removal
PROCHOT Profile Battery Removal status bit. The status is
latched until a read from host.
0b: Not triggered
1b: Triggered
PROCHOT Profile Adapter Removal status bit. The status is
latched until a read from host.
0b: Not triggered
1b: Triggered
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9.6.6 IIN_DPM Register (I2C address = 25/24h) [reset = 4100h]
IIN_DPM register reflects the actual input current limit programmed in the register, either from IIN_HOST register
or from ICO.
After ICO, the current limit used by DPM regulation may differ from the IIN_HOST register settings. The actual
DPM limit is reported in IIN_DPM register.
To read the nominal or typical input current limit
•
•
When using a 10-mΩ sense resistor (RSNS_RAC=0b). There is 50-mA offset at code 0. Note this offset is
only applied to code 0, not applied to other codes.
When using a 5-mΩ sense resistor (RSNS_RAC=1b). There is 100-mA offset at code 0. Note this offset is
only applied to code 0, not applied to other codes.
To read the maximum input current limit, need to add 100 mA/200 mA offset based on above nominal input
current limit reading approach.
•
•
When using a 10-mΩ sense resistor (RSNS_RAC=0b). There is 150-mA offset at code 0 and this 150 mA
offset is only applied to code 0, 100-mA offset should be added for all other non-zero codes.
When using a 5-mΩ sense resistor (RSNS_RAC=1b). There is 300-mA offset at code 0 and this 300 mA
offset is only applied to code 0, 200-mA offset should be added for all other non-zero codes
Figure 9-19. IIN_DPM Register with 10-mΩ Sense Resistor (I2C address = 25/24h) [reset = 4100h]
7
6
5
4
3
2
1
0
Reserved
Input Current in Input Current in Input Current in Input Current in Input Current in Input Current in Input Current in
DPM, bit 6
DPM, bit 5
DPM, bit 4
DPM, bit 3
DPM, bit 2
DPM, bit 1
DPM, bit 0
R
7
R
6
R
5
R
4
R
3
R
2
R
1
R
0
Reserved
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-18. IIN_DPM Register with 5-mΩ Sense Resistor (I2C address = 25h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
Reserved
R
0b
Not used. 1 = invalid write.
6
5
4
3
2
1
0
Input Current in DPM, bit 6
Input Current in DPM, bit 5
Input Current in DPM, bit 4
Input Current in DPM, bit 3
Input Current in DPM, bit 2
Input Current in DPM, bit 1
Input Current in DPM, bit 0
R
R
R
R
R
R
R
0b
0b
0b
0b
0b
0b
0b
0 = Adds 0 mA of input current.
1 = Adds 6400 mA of input current.
0 = Adds 0 mA of input current.
1 = Adds 3200 mA of input current.
0 = Adds 0 mA of input current.
1 = Adds 1600 mA of input current.
0 = Adds 0 mA of input current.
1 = Adds 800mA of input current
0 = Adds 0 mA of input current.
1 = Adds 400 mA of input current.
0 = Adds 0 mA of input current.
1 = Adds 200 mA of input current.
0 = Adds 0 mA of input current.
1 = Adds 100 mA of input current.
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Table 9-19. IIN_DPM Register with 5-mΩ Sense Resistor (I2C address = 24h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7-0
Reserved
R
00000000b
Not used. Value Ignored.
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9.6.7 ADCVBUS/PSYS Register (I2C address = 27/26h)
•
•
•
PSYS: Full range: 3.06 V, LSB: 12 mV (ADC_FULLSCALE=1b)
PSYS: Full range: 2.04 V, LSB: 8 mV (ADC_FULLSCALE=0b)
VBUS: Full range: 0 mV to 24480 mV, LSB: 96 mV
Figure 9-20. ADCVBUS/PSYS Register (I2C address = 27/26h)
7
R
7
6
R
6
5
R
5
4
R
4
3
R
3
2
R
2
1
R
1
0
R
0
R
R
R
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-20. ADCVBUS Register (I2C address = 27h) Field Descriptions
BIT
FIELD
FIELD
TYPE
RESET
DESCRIPTION
7-0
R
8-bit Digital Output of Input Voltage
Table 9-21. ADCPSYS Register (I2C address = 26h) Field Descriptions
BIT
TYPE
RESET
DESCRIPTION
7-0
R
8-bit Digital Output of System Power
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9.6.8 ADCIBAT Register (I2C address = 29/28h)
•
•
•
ICHG: Full range when using a 10-mΩ sense resistor (RSNS_RSR=0b):8.128 A, LSB: 64 mA.
ICHG: Full range when using a 5-mΩ sense resistor (RSNS_RSR=1b):16.256A,LSB: 128 mA.
IDCHG: Full range when using a 10-mΩ sense resistor (RSNS_RSR=0b):32.512 A, LSB: 256 mA. Note when
discharge current is higher than 32.512 A, the ADC will report 32.512 A
•
IDCHG: Full range when using a 5-mΩ sense resistor (RSNS_RSR=1b):65.024A,LSB: 512 mA. Note when
discharge current is higher than 65.024 A, the ADC will report 65.024 A
Figure 9-21. ADCIBAT Register (I2C address = 29/28h)
7
6
R
6
5
R
5
4
R
4
3
R
3
2
R
2
1
R
1
0
R
0
Reserved
7
Reserved
R
R
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-22. ADCICHG Register (I2C address = 29h) Field Descriptions
BIT
7
FIELD
TYPE
RESET
DESCRIPTION
Reserved
R
R
Not used. Value ignored.
6-0
7-bit Digital Output of Battery Charge Current
Table 9-23. ADCIDCHG Register (I2C address = 28h) Field Descriptions
BIT
7
FIELD
TYPE
RESET
DESCRIPTION
Reserved
R
R
Not used. Value ignored.
6-0
7-bit Digital Output of Battery Discharge Current
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9.6.9 ADCIIN/CMPIN Register (I2C address = 2B/2Ah)
•
•
•
•
IIN Full range: When using a 10-mΩ sense resistor (RSNS_RAC=0b): 12.75 A, LSB: 50 mA.
IIN Full range: When using a 5-mΩ sense resistor (RSNS_RAC=1b): 25.5A, LSB:100 mA.
CMPIN Full range: 3.06 V, LSB: 12 mV (ADC_FULLSCALE=1b)
CMPIN Full range: 2.04 V, LSB: 8 mV (ADC_FULLSCALE=0b)
Figure 9-22. ADCIIN/CMPIN Register (I2C address = 2B/2Ah)
7
R
7
6
R
6
5
R
5
4
R
4
3
R
3
2
R
2
1
R
1
0
R
0
R
R
R
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-24. ADCIIN Register (I2C address = 2Bh) Field Descriptions
BIT
FIELD
FIELD
TYPE
RESET
DESCRIPTION
7-0
R
8-bit Digital Output of Input Current
Table 9-25. ADCCMPIN Register (I2C address = 2Ah) Field Descriptions
BIT
TYPE
RESET
DESCRIPTION
7-0
R
8-bit Digital Output of CMPIN voltage
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9.6.10 ADCVSYS/VBAT Register (I2C address = 2D/2Ch)
•
•
•
•
VSYS: Full range: 2.88 V to 19.2 V, LSB: 64 mV (1S-4S)
VSYS: Full range: 8.16 V to 24.48 V, LSB: 64 mV (5S)
VBAT: Full range: 2.88 V to 19.2 V, LSB: 64 mV (1S-4S)
VBAT: Full range: 8.16 V to 24.48 V, LSB: 64 mV (5S)
Figure 9-23. ADCVSYS/VBAT Register (I2C address = 2D/2Ch)
7
R
7
6
R
6
5
R
5
4
R
4
3
R
3
2
R
2
1
0
R
1
R
0
R
R
R
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-26. ADCVSYS Register (I2C address = 2Dh) Field Descriptions
BIT
FIELD
FIELD
TYPE
RESET
DESCRIPTION
7-0
R
8-bit Digital Output of System Voltage
Table 9-27. ADCVSYSVBAT Register (I2C address = 2Ch) Field Descriptions
BIT
TYPE
RESET
DESCRIPTION
7-0
R
8-bit Digital Output of Battery Voltage
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9.6.11 ChargeOption1 Register (I2C address = 31/30h) [reset = 3F00h]
Figure 9-24. ChargeOption1 Register (I2C address = 31/30h) [reset = 3300h]
7
6
5
4
3
2
1
0
EN_IBAT
EN_PROCHOT
_LPWR
PSYS_CONFIG
R/W
RSNS_RAC
RSNS_RSR
PSYS_RATIO EN_FAST_5MO
HM
R/W
R/W
R/W
3
R/W
R/W
1
R/W
0
7
6
5
4
2
CMP_REF
CMP_POL
CMP_DEG
R/W
FORCE_CON
V_OFF
EN_PTM
EN_SHIP_DCH AUTO_WAKEU
G
P_EN
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-28. ChargeOption1 Register (I2C address = 31h) Field Descriptions
BIT
FIELD
TYPE
RESET DESCRIPTION
7
EN_IBAT
R/W
0b
IBAT Enable
Enable the IBAT output buffer. In low power mode (EN_LWPWR=1b), IBAT
buffer is always disabled regardless of this bit value.
0b Turn off IBAT buffer to minimize Iq <default at POR>
1b: Turn on IBAT buffer
6
EN_PROCHOT_LPWR
R/W
R/W
0b
Enable PROCHOT during battery only low power mode
With battery only, enable VSYS in PROCHOT with low power consumption. Do
not enable this function with adapter present. Refer to Section 9.3.20.1 for more
details.
0b: Disable Independent Comparator low power PROCHOT <default at POR>
1b: Enable Independent Comparator low power PROCHOT
5-4
PSYS_CONFIG
11b
PSYS Enable and Definition Register
Enable PSYS sensing circuit and output buffer (whole PSYS circuit). In low
power mode (EN_LWPWR=1b), PSYS sensing and buffer are always disabled
regardless of this bit value.
00b: PSYS=PBUS+PBAT
01b: PSYS=PBUS
10b: Reserved
11b: Turn off PSYS buffer to minimize Iq<default at POR>
3
2
1
RSNS_RAC
RSNS_RSR
PSYS_RATIO
R/W
R/W
R/W
1b
1b
1b
Input sense resistor RAC
0b: 10 mΩ
1b: 5 mΩ <default at POR>
Charge sense resistor RSR
0b: 10 mΩ
1b: 5 mΩ <default at POR>
PSYS Gain
Ratio of PSYS output current vs total system power
0b: 0.25 µA/W
1b: 1 µA/W <default at POR>
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Table 9-28. ChargeOption1 Register (I2C address = 31h) Field Descriptions (continued)
BIT
FIELD
TYPE
RESET DESCRIPTION
0
EN_FAST_5MOHM
R/W
1b
Enable fast compensation to increase bandwidth under 5 mΩ RAC
(RSNS_RAC=1b) for input current up to 6.4-A application (the fast
compensation will only work when IADPT pin is configured less than 160 kΩ)
0b: Turn off bandwidth promotion under RSNS_RAC=1b
(Note when this bit configured as 0b, IIN_HOST DAC can be extended up to
10 A, writing IIN_HOST value higher than 10 A will be neglected, the ICHG
regulation loop will be slower to guarantee stability under 6.4-A to 10-A input
current range)
1b: Turn on bandwidth promotion under RSNS_RAC=1b <default at POR>
(Note when this bit configured as 1b, IIN_HOST DAC is clamped at 6.4 A,
writing IIN_HOST value higher than 6.4 A will be neglected, the ICHG regulation
loop will be faster within 6.4-A input current range)
Table 9-29. ChargeOption1 Register (I2C address = 30h) Field Descriptions
BIT
FIELD
TYPE
RESET DESCRIPTION
7
CMP_REF
R/W
0b
Independent Comparator internal Reference
0b: 2.3 V <default at POR>
1b: 1.2 V
6
CMP_POL
CMP_DEG
R/W
R/W
0b
Independent Comparator output Polarity
0b: When CMPIN is above internal threshold, CMPOUT is LOW (internal
hysteresis) <default at POR>
1b: When CMPIN is below internal threshold, CMPOUT is LOW (external
hysteresis)
5-4
00b
Independent comparator deglitch time, only applied to the falling edge of
CMPOUT (HIGH → LOW).
00b: Independent comparator is enabled with output deglitch time 5 µs <default
at POR>
01b: Independent comparator is enabled with output deglitch time of 2 ms
10b: Independent comparator is enabled with output deglitch time of 20 ms
11b: Independent comparator is enabled with output deglitch time of 5 sec
3
FORCE_CONV_OFF
R/W
0b
Force Converter Off function
When independent comparator triggers, (CMPOUT pin pulled down) converter
latches off, at the same time, CHRG_OK signal goes LOW to notify the system.
Charge current is also set to zero internally, but charge current register setting
keeps the same. To get out of converter latches off, firstly the CMPOUT should
be released to high and secondly FORCE_CONV_OFF bit should be cleared
(=0b).
0b: Disable this function <default at POR>
1b: Enable this function
2
EN_PTM
R/W
0b
PTM enable register bit, it will automatically reset to zero
0b: disable PTM. <default at POR>
1b: enable PTM.
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Table 9-29. ChargeOption1 Register (I2C address = 30h) Field Descriptions (continued)
BIT
FIELD
TYPE
RESET DESCRIPTION
1
EN_SHIP_DCHG
R/W
0b
Discharge SRN for Shipping Mode. Used to discharge VBAT pin capacitor
voltage which is necessary for battery gauge device shipping mode.
When this bit is 1, discharge SRN pin down in 140 ms 20 mA. When 140 ms is
over, this bit is reset to 0b automatically. If this bit is written to 0b by host before
140 ms expires, VSYS should stop discharging immediately. Note if after 140-ms
SRN voltage is still not low enough for battery gauge device entering ship mode,
the host may need to start a new 140-ms discharge cycle.
0b: Disable shipping mode <default at POR>
1b: Enable shipping mode
0
AUTO_WAKEUP_EN
R/W
0b
Auto Wakeup Enable
When this bit is HIGH, if the battery is below VSYS_MIN , the device should
automatically enable 128-mA charging current for 30 mins. When the battery is
charged up above minimum system voltage, charge will terminate and the bit is
reset to LOW. The charger will also exit auto wake up if host write a new charge
current value to charge current register Reg0x14().
0b: Disable <default at POR>
1b: Enable
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9.6.12 ChargeOption2 Register (I2C address = 33/32h) [reset = 00B7]
Figure 9-25. ChargeOption2 Register (I2C address = 33/32h) [reset = 00B7]
7
6
5
4
3
2
1
0
PKPWR_TOVLD_DEG
R/W
EN_PKPWR_II EN_PKPWR_V PKPWR_OVLD PKPWR_RELA
PKPWR_TMAX[1:0]
R/W
N_DPM
SYS
_STAT
X_STAT
R/W
R/W
R/W
R/W
7
6
5
4
3
2
1
0
EN_EXTILIM
EN_ICHG_IDC
HG
Q2_OCP
ACX_OCP
EN_ACOC
ACOC_VTH
EN_BATOC
BATOC_VTH
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-30. ChargeOption2 Register (I2C address = 33h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7-6
PKPWR_TOVLD_DEG
R/W
00b
Input Overload time in Peak Power Mode
00b: 1 ms <default at POR>
01b: 2 ms
10b: 5 ms
11b: 10 ms
5
4
EN_PKPWR_IIN_DPM
R/W
R/W
0b
0b
Enable Peak Power Mode triggered by input current overshoot
If REG0x33[5:4] are 00b, peak power mode is disabled. Upon adapter
removal, the bits are reset to 00b.
0b: Disable peak power mode triggered by input current overshoot
<default at POR>
1b: Enable peak power mode triggered by input current overshoot.
EN_PKPWR_VSYS
Enable Peak Power Mode triggered by system voltage under-shoot
If REG0x33[5:4] are 00b, peak power mode is disabled. Upon adapter
removal, the bits are reset to 00b.
0b: Disable peak power mode triggered by system voltage under-shoot
<default at POR>
1b: Enable peak power mode triggered by system voltage under-shoot.
3
2
STAT_PKPWR_OVLD
STAT_PKPWR_RELAX
PKPWR_TMAX[1:0]
R/W
R/W
R/W
0b
Indicator that the device is in overloading cycle. Write 0 to get out of
overloading cycle.
0b: Not in peak power mode. <default at POR>
1b: In peak power mode.
0b
Indicator that the device is in relaxation cycle. Write 0 to get out of
relaxation cycle.
0b: Not in relaxation cycle. <default at POR>
1b: In relaxation mode.
1-0
00b
Peak power mode overload and relax cycle time.
00b: 20 ms <default at POR>
01b: 40 ms
10b: 80 ms
11b: 1 sec
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Table 9-31. ChargeOption2 Register (I2C address = 32h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
EN_EXTILIM
R/W
1b
Enable ILIM_HIZ pin to set input current limit
0b: Input current limit is set by IIN_DPM register..
1b: Input current limit is set by the lower value of ILIM_HIZ pin and
IIN_DPM register.. <default at POR>
6
5
EN_ICHG_IDCHG
Q2_OCP
R/W
R/W
0b
1b
0b: IBAT pin as discharge current. <default at POR>
1b: IBAT pin as charge current.
Q2 OCP threshold by sensing Q2 VDS
0b: 210 mV
1b: 150 mV <default at POR>
4
ACX_OCP
R/W
1b
Fixed Input current OCP threshold by sensing ACP-ACN, converter
is disabled immediately when triggered non latch protection resume
switching automatically after ACX comparator release.
0b: 280 mV(RSNS_RAC=0b)/200 mV(RSNS_RAC=1b)
1b: 150 mV(RSNS_RAC=0b)/100 mV(RSNS_RAC=1b) <default at
POR>
3
EN_ACOC
R/W
0b
ACOC Enable
Configurable Input overcurrent (ACOC) protection by sensing the
voltage across ACP and ACN. Upon ACOC (after 250-μs blank-out
time), converter is disabled. Non latch fault, after 250-ms falling edge
de-glitch time converter starts switching automatically.
0b: Disable ACOC <default at POR>
1b: ACOC threshold 133% or 200% ILIM2
2
1
ACOC_VTH
EN_BATOC
R/W
R/W
1b
1b
ACOC Limit
Set MOSFET OCP threshold as percentage of IIN_DPM with current
sensed from RAC.
0b: 133% of ILIM2
1b: 200% of ILIM2 <default at POR>
BATOC
Battery discharge overcurrent (BATOC) protection by sensing the
voltage across SRN and SRP. Upon BATOC, converter is disabled.
0b: Disable BATOC
1b: Enable BATOC threshold 133% or 200% PROCHOT IDCHG_TH2
<default at POR>
0
BATOC_VTH
R/W
1b
Set battery discharge overcurrent threshold as percentage of
PROCHOT battery discharge current limit. Note when SRN and SRP
common voltage is low for 1S application, the BATOC threshold could
be derating.
0b: 133% of PROCHOT IDCHG_TH2
1b: 200% of PROCHOT IDCHG _TH2<default at POR>
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9.6.13 ChargeOption3 Register (I2C address = 35/34h) [reset = 0434h]
Figure 9-26. ChargeOption3 Register (I2C address = 35/34h) [reset = 0434h]
7
6
5
4
3
2
1
0
EN_HIZ
RESET_REG RESET_VINDP
M
EN_OTG
EN_ICO_MOD EN_PORT_CT EN_VSYS_MIN EN_OTG_BIGC
E
RL
_SOFT_SR
AP
R/W
7
R/W
6
R/W
5
R/W
4
R/W
R/W
R/W
R/W
3
2
1
0
BATFET_ENZ EN_VBUS_VAP OTG_VAP_MO
DE
IL_AVG
R/W
CMP_EN
BATFETOFF_H PSYS_OTG_ID
IZ
CHG
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-32. ChargeOption3 Register (I2C address = 35h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
EN_HIZ
R/W
0b
Device HIZ Mode Enable
When the charger is in HIZ mode, the device draws minimal quiescent
current. With VBUS above UVLO. REGN LDO stays on, and system
powers from battery.
0b: Device not in HIZ mode <default at POR>
1b: Device in HIZ mode
6
5
RESET_REG
R/W
R/W
0b
0b
Reset Registers
All the registers are reset to POR default setting except the VINDPM
register.
0b: Idle <default at POR>
1b: Reset all the registers to default values. After reset, this bit goes back
to 0.
RESET_VINDPM
Reset VINDPM Threshold
0b: Idle
1b: Converter is disabled to measure VINDPM threshold. After VINDPM
measurement is done, this bit goes back to 0 and converter starts.
(When battery voltage is lower than VSYS_MIN this function is not
recommended due to potential risk to crash system during VINDPM
measurement .)
4
EN_OTG
R/W
0b
OTG Mode Enable
Enable device in OTG mode when OTG/VAP/FRS pin is HIGH.
0b: Disable OTG <default at POR>
1b: Enable OTG mode to supply VBUS from battery.
3
2
1
EN_ICO_MODE
R/W
R/W
R/W
0b
1b
0b
Enable ICO Algorithm
0b: Disable ICO algorithm. <default at POR>
1b: Enable ICO algorithm.
EN_PORT_CTRL
Enable BATFET control
0b: Disable BATFET control pin by HIZ BATDRV pin
1b: Enable BATFET control pin by activate BATDRV pin
EN_VSYS_MIN_SOFT_SR
Enable VSYS_MIN soft slew rate transition
0b: Disable VSYS_MIN soft slew rate transition <default at POR>
1b:Enable VSYS_MIN soft slew rate transition (1LSB/8μs=12.5mV/μs)
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Table 9-32. ChargeOption3 Register (I2C address = 35h) Field Descriptions (continued)
BIT
FIELD
TYPE
RESET
DESCRIPTION
0
EN_OTG_BIGCAP
R/W
0b
Enable OTG compensation for VBUS effective capacitance larger than 33
μF
0b: Disable OTG large VBUS capacitance compensation (Recommended
for VBUS effective capacitance smaller than 33 μF) <default at POR>
1b: Enable OTG large VBUS capacitance compensation (Recommended
for VBUS effective capacitance larger than 33 μF)
Table 9-33. ChargeOption3 Register (I2C address = 34h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
BATFET_ENZ
R/W
0b
Turn off BATFET under battery only mode. If charger is not in battery only
mode this bit is not allowed to be written to 1. Under battery only OTG
mode, this bit is forced to be 0b.
0b: Not force turn off BATFET <default at POR>
1b: Force turn off BATFET
6
5
EN_VBUS_VAP
R/W
R/W
0b
1b
Enable the VBUS VAP for VAP operation mode 2&3
0b: Disabled <default at POR>
1b: Enabled
OTG_VAP_MODE
The selection of the external OTG/VAP/FRS pin control. Don't
recommend to change pin control after OTG/VAP/FRS pin is pulled high.
0b: the external OTG/VAP/FRS pin controls the EN/DIS VAP mode
1b: the external OTG/VAP/FRS pin controls the EN/DIS OTG mode
<default at POR>
4-3
IL_AVG
R/W
10b
Converter inductor average current clamp. It is recommended to choose
the smallest option which is higher than maximum possible converter
average inductor current.
00b: 6A
01b: 10A
10b: 15A <default at POR>
11b: Disabled
2
1
0
CMP_EN
R/W
R/W
R/W
1b
0b
0b
Enable Independent Comparator with effective low.
0b: Disabled
1b: Enabled <default at POR>
BATFETOFF_HIZ
PSYS_OTG_IDCHG
Control BATFET on/off during charger HIZ mode.
0b: BATFET on during charger HIZ mode <default at POR>
1b: BATFET off during charger HIZ mode
PSYS function during OTG mode.
0b: PSYS as battery discharge power minus OTG output power <default
at POR>
1b: PSYS as battery discharge power only
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9.6.14 ProchotOption0 Register (I2C address = 37/36h) [reset = 4A81h(2S~5s) 4A09(1S)]
To set VSYS_TH1 threshold to trigger discharging VBUS in VAP mode, write a 6-bit Vmin Active Protection
register command (REG0x37<7:2>()) using the data format listed in Figure 9-27, Table 9-34, and Table 9-35.
The charger Measure on VSYS with fixed 5-µs deglitch time. Trigger when SYS pin voltage is below the
thresholds. The threshold range from 3.2 V (000000b) to 9.5 V (111111b) for 2s~5s and 3.2 V (000000b) to 3.9
V (000111b) for 1S, with 100-mV step resolution. There is a fixed DC offset which is 3.2 V. Under 1S application
writing beyond 3.9 V will be ignored. For example 000111b and xxx111b result in same VSYS_TH1 setting 3.9
V. Upon POR, the VSYS_TH1 threshold to trigger VBUS discharge in VAP mode is 3.4 V (000010b) for 1S and
6.400 V (100000b) for 2s~5s.
Figure 9-27. ProchotOption0 Register (I2C address = 37/36h) [reset = 4A81h(2S~5s) 4A09(1S)]
7
6
5
4
3
2
1
0
ILIM2_VTH
ICRIT_DEG
R/W
PROCHOT_VI
NDPM_80_90
R/W
7
R/W
6
R/W
5
R/W
4
R/W
3
R/W
0
2
1
VSYS_TH1
INOM_DEG LOWER_PRO
CHOT_VINDP
M
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-34. ProchotOption0 Register (I2C address = 37h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7-3
ILIM2_VTH
R/W
01001b
ILIM2 Threshold
5 bits, percentage of IIN_DPM in 0x22H. Measure current between ACP and
ACN.
Trigger when the current is above this threshold:
00001b - 11001b: 110% - 230%, step 5%
11010b - 11110b: 250% - 450%, step 50%
11111b: Out of Range (Ignored)
Default 150%, or 01001
2-1
ICRIT_DEG
R/W
01b
ICRIT Deglitch time
ICRIT threshold is set to be 110% of ILIM2
.
Typical ICRIT deglitch time to trigger PROCHOT.
00b: 15 µs
01b: 100 µs <default at POR>
10b: 400 µs (max 500 μs)
11b: 800 µs (max 1 ms)
0
PROCHOT_VINDPM_ R/W
80_90
0b
Lower threshold of the PROCHOT_VINDPM comparator
When REG0x33[0]=1, the threshold of the PROCHOT_VINDPM comparator is
determined by this bit setting.
0b: 83% of VinDPM threshold <default at POR>.
1b: 91% of VinDPM threshold
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Table 9-35. ProchotOption0 Register (I2C address = 36h) Field Descriptions
BIT
FIELD
TYPE
RESET
100000b( VSYS Threshold to trigger discharging VBUS in VAP mode.
2S~5s) Measure on VSYS with fixed 5-µs deglitch time. Trigger when SYS pin voltage is
000010b( below the thresholds. There is a fixed DC offset which is 3.2 V.
DESCRIPTION
7-2
VSYS_TH1
R/W
1S)
2S - 5s battery (Default: 6.4 V)
000000b- 111111b: 3.2 V - 9.5 V with 100-mV step size.
1S battery (Default: 3.4 V)
XXX000b - XXX111b: 3.2 V - 3.9 V with 100-mV step size.
1
0
INOM_DEG
R/W
0b
INOM Deglitch Time
INOM is always 10% above IIN_DPM register setting. Measure current between
ACP and ACN.
Trigger when the current is above this threshold.
0b: 1 ms(max) <default at POR>
1b: 60 ms(max)
LOWER_PROCHOT_ R/W
VINDPM
1b
Enable the lower threshold of the PROCHOT_VINDPM comparator
0b: the threshold of the PROCHOT_VINDPM comparator follows the same
VINDPM REG0x3D() setting.
1b: the threshold of the PROCHOT_VINDPM comparator is lower and determined
by PROCHOT_VINDPM_80_90 bit setting. <default at POR>
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9.6.15 ProchotOption1 Register (I2C address = 39/38h) [reset = 41A0h]
Figure 9-28. ProchotOption1 Register (I2C address = 39/38h) [reset = 41A0h]
7
6
5
4
3
2
1
0
IDCHG_TH1
IDCHG_DEG1
R/W
R/W
R/W
5
R/W
R/W
R/W
R/W
R/W
7
6
4
3
2
1
0
PP_VINDPM
R/W
PP_COMP
R/W
PP_ICRIT
R/W
PP_INOM
R/W
PP_IDCHG1
R/W
PP_VSYS
R/W
PP_BATPRES
R/W
PP_ACOK
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
When the REG0x38h[7:0] are set to be disabled, the PROCHOT event associated with that bit will not be
reported in the PROCHOT status register REG0x22h[7:0] any more, and the PROCHOT pin will not be pulled
low any more if the event happens.
Table 9-36. ProchotOption1 Register (I2C address = 39h) Field Descriptions
BIT
FIELD
TYPE
RESET DESCRIPTION
7-2
IDCHG_TH1
R/W
010000b
IDCHG level 1 Threshold
6 bit, range, range 0 A to 64512 mA, step 1024 mA.
Measure current between SRN and SRP.
Trigger when the discharge current is above the threshold.
If the value is programmed to 000000b PROCHOT is always triggered.
Default: 16256 mA or 010000b
1-0
IDCHG_DEG1
R/W
00b
IDCHG level 1 Deglitch Time
00b: 78 ms
01b: 1.25s <default at POR>
10b: 5s
11b: 20s
Table 9-37. ProchotOption1 Register (I2C address = 38h) Field Descriptions
BIT
FIELD
TYPE
RESET DESCRIPTION
7
PP_VINDPM
R/W
1b
VINDPM PROCHOT Profile
When all the REG0x38[7:0] , REG0x3D[1], REG0x3C[2]bits are 0, PROCHOT
function is disabled.
0b: disable
1b: enable<default at POR>
6
PP_COMP
R/W
0b
Independent comparator PROCHOT Profile
When not in low power mode(Battery only), use this bit to control independent
comparator PROCHOT profiles.
When in low power mode(Battery only), this bit will lose controllability
to independent comparator PROCHOT profiles. Need to use
EN_PROCHOT_LPWR to enable independent comparator and its PROCHOT
profile.
0b: disable <default at POR>
1b: enable
5
4
PP_ICRIT
PP_INOM
R/W
R/W
1b
0b
ICRIT PROCHOT Profile
0b: disable
1b: enable <default at POR>
INOM PROCHOT Profile
0b: disable <default at POR>
1b: enable
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Table 9-37. ProchotOption1 Register (I2C address = 38h) Field Descriptions (continued)
BIT
FIELD
TYPE
RESET DESCRIPTION
3
PP_IDCHG1
R/W
0b
0b
0b
IDCHG1 PROCHOT Profile
0b: disable <default at POR>
1b: enable
2
1
PP_VSYS
R/W
R/W
VSYS PROCHOT Profile
0b: disable <default at POR>
1b: enable
PP_BATPRES
Battery removal PROCHOT Profile
0b: disable <default at POR>
1b: enable (one-shot falling edge triggered)
If BATPRES is enabled in PROCHOT after the battery is removed, it will
immediately send out one-shot PROCHOT pulse.
0
PP_ACOK
R/W
0b
Adapter removal PROCHOT Profile
0b: disable <default at POR>
1b: enable
EN_LWPWR= 0b to assert PROCHOT pulse after adapter removal.
If PP_ACOK is enabled in PROCHOT after the adapter is removed, it will be
pulled low.
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9.6.16 ADCOption Register (I2C address = 3B/3Ah) [reset = 2000h]
Figure 9-29. ADCOption Register (I2C address = 3B/3Ah) [reset = 2000h]
7
6
5
4
3
2
1
0
ADC_CONV
ADC_START ADC_FULLSCA
LE
Reserved
R/W
7
R/W
6
R/W
5
R/W
4
R/W
3
R/W
2
R/W
1
R/W
0
EN_ADC_CMPI EN_ADC_VBU EN_ADC_PSY
EN_ADC_IIN EN_ADC_IDCH EN_ADC_ICHG EN_ADC_VSY EN_ADC_VBAT
N
S
S
G
S
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
The ADC registers are read in the following order: VBAT, VSYS, ICHG, IDCHG, IIN, PSYS, VBUS, CMPIN. ADC
is disabled in low power mode. Before enabling ADC, low power mode should be disabled first.
Table 9-38. ADCOption Register (I2C address = 3Bh) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
ADC_CONV
R/W
0b
Typical each ADC channel conversion time is 25 ms maximum. Total ADC
conversion time is the product of 25 ms and enabled channel counts.
0b: One-shot update. Do one set of conversion updates to registers
REG0x29/28(), REG0x27/26(), REG0x2B/2A(), and REG0x2D/2C() after
ADC_START = 1.
1b: Continuous update. Do a set of conversion updates to registers
REG0x29/28(), REG0x27/26(), REG0x2B/2A(), and REG0x2D/2C()every 1
sec.
6
5
ADC_START
R/W
R/W
0b
1b
0b: No ADC conversion
1b: Start ADC conversion. After the one-shot update is complete, this bit
automatically resets to zero
ADC_FULLSCALE
ADC input voltage range adjustment for PSYS and CMPIN ADC Channels.
2.04-V full scale holds 8 mV/LSB resolution and 3.06-V full scale holds 12
mV/LSB resolution
0b: 2.04 V
1b: 3.06 V <default at POR>(Not accurate for REGN<6-V application (VBUS
& VSYS< 6V))
4-0
Reserved
R/W
00000b
Reserved
Table 9-39. ADCOption Register (I2C address = 3Ah) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
EN_ADC_CMPIN
R/W
0b
0b: Disable <default at POR>
1b: Enable
6
5
4
3
2
EN_ADC_VBUS
EN_ADC_PSYS
EN_ADC_IIN
R/W
R/W
R/W
R/W
R/W
0b
0b
0b
0b
0b
0b: Disable <default at POR>
1b: Enable
0b: Disable <default at POR>
1b: Enable
0b: Disable <default at POR>
1b: Enable
EN_ADC_IDCHG
EN_ADC_ICHG
0b: Disable <default at POR>
1b: Enable
0b: Disable <default at POR>
1b: Enable
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Table 9-39. ADCOption Register (I2C address = 3Ah) Field Descriptions (continued)
BIT
FIELD
TYPE
RESET
DESCRIPTION
1
EN_ADC_VSYS
R/W
0b
0b: Disable <default at POR>
1b: Enable
0
EN_ADC_VBAT
R/W
0b
0b: Disable <default at POR>
1b: Enable
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9.6.17 ChargeOption4 Register (I2C address = 3D/3Ch) [reset = 0048h]
Figure 9-30. ChargeOption4 Register (I2C address = 3D/3Ch) [reset = 0048h]
7
7
6
5
4
3
2
1
0
VSYS_UVP
EN_Dither
R/W
VSYS_UVP_N PP_VBUS_VAP STAT_VBUS_V
O_HICCUP
AP
R/W
6
R/W
R/W
R
5
4
3
2
1
0
STAT_PTM
R
IDCHG_DEG2
R/W
IDCHG_TH2
R/W
PP_IDCHG2
R/W
STAT_IDCHG2
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-40. ChargeOption4 Register (I2C address = 3Dh) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7-5
VSYS_UVP
R/W
000b
VSYS Under Voltage Lock Out After UVP is triggered the charger enters
hiccup mode, and then the charger is latched off if the restart fails 7
times in 90s The hiccup mode during the UVP can be disabled by setting
0x37[10]=1.
VSYS_UVP
000b
1S~5s
VSYS_UVP
100b
1S~5s
5.6 V
2.4 V(Default)
3.2 V
4.0 V
4.8 V
101b
6.4 V
7.2 V
8.0 V
001b
010b
011b
110b
111b
4-3
EN_DITHER
R/W
00b
Frequency Dither configuration
00b: Disable Dithering<default at POR>
01b: Dither 1X (±2% Fs dithering range)
10b: Dither 2X (±4% Fs dithering range)
11b: Dither 3X (±6% Fs dithering range)
2
1
0
VSYS_UVP_NO_HICCUP
PP_VBUS_VAP
R/W
R/W
R
0b
0b
0b
Disable VSYS_UVP Hiccup mode operation:
0b: Enable VSYS_UVP Hiccup mode <default at POR>
1b: Disable VSYS_UVP Hiccup mode
VBUS_VAP PROCHOT Profile
0b: disable <default at POR>
0b: enable
STAT_VBUS_VAP
PROCHOT profile VBUS_VAP status bit. The status is latched until a read
from host.
0b: Not triggered <default at POR>
1b: Triggered
Table 9-41. ChargeOption4 Register (I2C address = 3Ch) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7-6
IDCHG_DEG2
R/W
01b
Battery discharge current limit 2 deglitch time(minimum value)
00b: 100 μs
01b: 1.6 ms <default at POR>
10b: 6 ms
11b: 12 ms
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Table 9-41. ChargeOption4 Register (I2C address = 3Ch) Field Descriptions (continued)
BIT
FIELD
TYPE
RESET
DESCRIPTION
5-3
IDCHG_TH2
R/W
001b
Battery discharge current limit2 based on percentage of IDCHG_TH1.
Note IDCHG_TH2 setting higher than 32256 mA should lose accuracy
de-rating between target value and 32256 mA. (Recommend not to set
higher than 20 A for 1S OTG boost operation)
000b: 125% IDCHG_TH1
001b: 150% IDCHG_TH1 <default at POR>
010b: 175% IDCHG_TH1
011b: 200% IDCHG_TH1
100b: 250% IDCHG_TH1
101b: 300% IDCHG_TH1
110b: 350% IDCHG_TH1
111b: 400% IDCHG_TH1
2
1
0
PP_IDCHG2
STAT_IDCHG2
STAT_PTM
R/W
R
0b
0b
0b
IDCHG2 PROCHOT Profile
0b: disable <default at POR>
1b: enable
The status is latched until a read from host.
0b: Not triggered <default at POR>
1b: Triggered
R
PTM operation status bit monitor
0b: Not in PTM Operation <default at POR>
1b: In PTM Operation
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9.6.18 Vmin Active Protection Register (I2C address = 3F/3Eh) [reset = 006Ch(2s~5s)/0004h(1S)]
To set the VAP VBUS PROCHOT trigger threshold, write a 7-bit Vmin Active Protection register command
(REG0x3F[7:1]) using the data format listed in Figure 9-31 and Table 9-42. The charger provides VAP mode
VBUS PROCHOT trigger threshold range from 3.2 V (0000000b) to 15.9 V (1111111b), with 100-mV step
resolution. There is a fixed offset of 3.2 V. Upon POR, the VBUS PROCHOT trigger threshold is 3.2 V
(0000000b).
To set VSYS_TH2 Threshold to assert STAT_VSYS, write a 6-bit Vmin Active Protection register command
(REG0x3E[7:2]) using the data format listed in Figure 9-31 and Table 9-43. The charger Measure on VSYS with
fixed 5-µs deglitch time. Trigger when SYS pin voltage is below the thresholds. The threshold range from 3.2
V (000000b) to 9.5 V (111111b) for 2s~5s and 3.2 V (000000b) to 3.9 V (000111b) for 1S, with 100-mV step
resolution. There is a fixed DC offset which is 3.2 V. Under 1S application writing beyond 3.9 V will be ignored.
For example, xxx111b and 000111b result in same VSYS_TH2 setting 3.9 V. Upon POR, the VSYS PROCHOT
trigger threshold is 3.2 V (000000b) for 1S and 5.9 V (011011b) for 2s~5s .
Figure 9-31. Vmin Active Protection Register (I2C address = 3F/3Eh) [reset = 0070h/0004h]
7
6
5
4
3
2
1
0
VBUS_VAP_TH VBUS_VAP_TH VBUS_VAP_TH VBUS_VAP_TH VBUS_VAP_T VBUS_VAP_TH VBUS_VAP_TH
Reserved
Bit6
Bit5
Bit4
Bit3
H Bit2
Bit1
Bit0
R/W
R/W
7
6
5
4
3
2
1
0
VSYS_TH2 Bit6 VSYS_TH2 Bit5 VSYS_TH2 Bit4 VSYS_TH2 Bit3 VSYS_TH2
Bit2
VSYS_TH2 Bit1 EN_TH2_FOLL
OW_TH1
EN_FRS
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-42. Vmin Active Protection Register (I2C address = 3Fh) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
VBUS_VAP_TH, Bit6
R/W
0b
0 = Adds 0 mV of VAP Mode VBUS PROCHOT trigger voltage threshold
1 = Adds 6400 mV of VAP Mode VBUS PROCHOT trigger voltage
threshold
6
5
VBUS_VAP_TH, Bit5
VBUS_VAP_TH, Bit4
R/W
R/W
0b
0b
0 = Adds 0 mV of VAP Mode VBUS PROCHOT trigger voltage threshold
1 = Adds 3200 mV of VAP Mode VBUS PROCHOT trigger voltage
threshold
0 = Adds 0 mV of VAP Mode VBUS PROCHOT trigger voltage threshold
1 = Adds 1600 mV of VAP Mode VBUS PROCHOT trigger voltage
threshold
4
3
2
1
0
VBUS_VAP_TH, Bit3
VBUS_VAP_TH, Bit2
VBUS_VAP_TH, Bit1
VBUS_VAP_TH, Bit0
Reserve
R/W
R/W
R/W
R/W
R/W
0b
0b
0b
0b
0b
0 = Adds 0 mV of VAP Mode VBUS PROCHOT trigger voltage threshold
1 = Adds 800 mV of VAP mode VBUS PROCHOT trigger voltage threshold
0 = Adds 0 mV of VAP mode VBUS PROCHOT trigger voltage threshold
1 = Adds 400 mV of VAP mode VBUS PROCHOT trigger voltage threshold
0 = Adds 0 mV of VAP mode VBUS PROCHOT trigger voltage threshold
1 = Adds 200 mV of VAP mode VBUS PROCHOT trigger voltage threshold
0 = Adds 0 mV of VAP mode VBUS PROCHOT trigger voltage threshold
1 = Adds 100 mV of VAP mode VBUS PROCHOT trigger voltage threshold
Reserve
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Table 9-43. Vmin Active Protection Register (I2C address = 3Eh) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
VSYS_TH2, Bit5
R/W
0b
0 = Adds 0 mV of VAP mode VSYS PROCHOT trigger voltage threshold
1 = Adds 3200 mV of VAP mode VSYS PROCHOT trigger voltage
threshold
6
5
4
3
2
1
VSYS_TH2, Bit4
VSYS_TH2, Bit3
VSYS_TH2, Bit2
VSYS_TH2, Bit1
VSYS_TH2, Bit0
R/W
R/W
R/W
R/W
R/W
1b(2S~5s 0 = Adds 0 mV of VAP mode VSYS PROCHOT trigger voltage threshold
)
1 = Adds 1600 mV of VAP mode VSYS PROCHOT trigger voltage
threshold
0b(1S)
1b(2S~5s 0 = Adds 0 mV of VAP mode VSYS PROCHOT trigger voltage threshold
)
1 = Adds 800 mV of VAP mode VSYS PROCHOT trigger voltage
threshold
0b(1S)
0b
0 = Adds 0 mV of VAP mode VSYS PROCHOT trigger voltage threshold
1 = Adds 400 mV of VAP mode VSYS PROCHOT trigger voltage
threshold
0b(1S)
1b(2S~5s
)
0 = Adds 0 mV of VAP mode VSYS PROCHOT trigger voltage threshold
1 = Adds 200 mV of VAP mode VSYS PROCHOT trigger voltage
threshold
1b
0 = Adds 0 mV of VAP mode VSYS PROCHOT trigger voltage threshold
1 = Adds 100 mV of VAP mode VSYS PROCHOT trigger voltage
threshold
EN_VSYSTH2_FOLLOW_VS R/W
YSTH1
0b
Enable internal VSYS_TH2 follow VSYS_TH1 setting neglecting register
REG37[7:2] setting
0b: disable <default at POR>
1b: enable
0
EN_FRS
R/W
0b
Fast Role Swap feature enable (note not recommend to change EN_FRS
during OTG operation, the FRS bit from 0 to 1 change will disable power
stage for about 200 μs (Fs = 400 kHz). HIZ mode holds higher priority, If
EN_HIZ=1b, this EN_FRS bit should be forced to 0b.
0b: disable <default at POR>
1b: enable
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9.6.19 OTGVoltage Register (I2C address = 07/06h) [reset = 09C4h]
To set the OTG output voltage limit, write to REG0x07/06h() using the data format listed in Figure 9-32, Table
9-44, and Table 9-45.
The DAC is clamped in digital core at minimal 3 V and maximum 24.0 V during normal OTG operation. Any
register writing lower than the minimal or higher than the maximum will be ignored.
Figure 9-32. OTGVoltage Register (I2C address = 07/06h) [reset = 09C4h]
7
6
5
4
3
2
1
0
Reserved
R/W
OTG Voltage,
bit 11
OTG Voltage,
bit 10
OTG Voltage,
bit 9
OTG Voltage,
bit 8
OTG Voltage,
bit 7
OTG Voltage,
bit 6
R/W
5
R/W
4
R/W
3
R/W
2
R/W
1
R/W
0
7
6
OTG Voltage,
bit 5
OTG Voltage,
bit 4
OTG Voltage,
bit 3
OTG Voltage,
bit 2
OTG Voltage,
bit 1
OTG Voltage,
bit 0
Reserved
R/W
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-44. OTGVoltage Register (I2C address = 07h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-14
Reserved
R/W
00b
Not used. 1 = invalid write.
13
12
11
10
9
OTG Voltage, bit 11
OTG Voltage, bit 10
OTG Voltage, bit 9
OTG Voltage, bit 8
OTG Voltage, bit 7
OTG Voltage, bit 6
R/W
R/W
R/W
R/W
R/W
R/W
0b
0b
1b
0b
0b
1b
0 = Adds 0 mV of OTG voltage.
1 = Adds 16384 mV of OTG voltage.
0 = Adds 0 mV of OTG voltage.
1 = Adds 8192 mV of OTG voltage.
0 = Adds 0 mV of OTG voltage.
1 = Adds 4096 mV of OTG voltage.
0 = Adds 0 mV of OTG voltage.
1 = Adds 2048 mV of OTG voltage.
0 = Adds 0 mV of OTG voltage.
1 = Adds 1024 mV of OTG voltage.
8
0 = Adds 0 mV of OTG voltage.
1 = Adds 512 mV of OTG voltage.
Table 9-45. OTGVoltage Register (I2C address = 06h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
OTG Voltage, bit 5
R/W
1b
0 = Adds 0 mV of OTG voltage.
1 = Adds 256 mV of OTG voltage.
6
5
4
3
2
OTG Voltage, bit 4
OTG Voltage, bit 3
OTG Voltage, bit 2
OTG Voltage, bit 1
OTG Voltage, bit 0
R/W
R/W
R/W
R/W
R/W
1b
0b
0b
0b
1b
0 = Adds 0 mV of OTG voltage.
1 = Adds 128 mV of OTG voltage.
0 = Adds 0 mV of OTG voltage.
1 = Adds 64 mV of OTG voltage.
0 = Adds 0 mV of OTG voltage.
1 = Adds 32 mV of OTG voltage.
0 = Adds 0 mV of OTG voltage.
1 = Adds 16 mV of OTG voltage.
0 = Adds 0 mV of OTG voltage.
1 = Adds 8 mV of OTG voltage.
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Table 9-45. OTGVoltage Register (I2C address = 06h) Field Descriptions (continued)
BIT
FIELD
TYPE
RESET
DESCRIPTION
1-0
Reserved
R/W
00b
Not used. Value Ignored.
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9.6.20 OTGCurrent Register (I2C address = 09/08h) [reset = 3C00h]
To set the OTG output current limit, write to REG0x09() using the data format listed in Figure 9-33 and Table
9-46.
Figure 9-33. OTGCurrent Register (I2C address = 09/08h) [reset = 3C00h]
7
6
5
4
3
2
1
0
Reserved
OTG Current
OTG Current
OTG Current
OTG Current
OTG Current
OTG Current
OTG Current
set by host, bit set by host, bit set by host, bit set by host, bit set by host, bit set by host, bit set by host, bit
6
5
4
3
2
1
0
R/W
7
R/W
R/W
R/W
R/W
R/W
R/W
R/W
6
5
4
3
2
1
0
Reserved
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-46. OTGCurrent Register (I2C address = 09h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
Reserved
R/W
0b
Not used. 1 = invalid write.
6
5
4
3
2
1
0
OTG Current set by host, bit 6
OTG Current set by host, bit 5
OTG Current set by host, bit 4
OTG Current set by host, bit 3
OTG Current set by host, bit 2
OTG Current set by host, bit 1
OTG Current set by host, bit 0
R/W
R/W
R/W
R/W
R/W
R/W
R/W
0b
1b
1b
1b
1b
0b
0b
0 = Adds 0 mA of OTG current.
1 = Adds 3200 mA of OTG current.
0 = Adds 0 mA of OTG current.
1 = Adds 1600 mA of OTG current.
0 = Adds 0 mA of OTG current.
1 = Adds 800 mA of OTG current.
0 = Adds 0 mA of OTG current.
1 = Adds 400 mA of OTG current.
0 = Adds 0 mA of OTG current.
1 = Adds 200 mA of OTG current.
0 = Adds 0 mA of OTG current.
1 = Adds 100 mA of OTG current.
0 = Adds 0 mA of OTG current.
1 = Adds 50 mA of OTG current.
Table 9-47. OTGCurrent Register (I2C address = 08h) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7-0
Reserved
R/W
00000000b
Not used. Value Ignored.
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9.6.21 InputVoltage(VINDPM) Register (I2C address = 0B/0Ah) [reset =VBUS-1.28V]
To set the input voltage limit, write a 16-bit InputVoltage register command (REG0x0B/0A()) using the data
format listed in Figure 9-34, Table 9-48, and Table 9-49.
If the input voltage drops more than the InputVoltage register allows, the device enters VINDPM and reduces the
charge current. The default setting is 1.28 V below the no-load VBUS voltage. There is a fixed DC offset 3.2 V
for all codes.
Figure 9-34. InputVoltage Register (I2C address = 0B/0Ah) [reset = VBUS-1.28V]
7
6
5
4
3
2
1
0
Reserved
R/W
Input Voltage,
bit 7
Input Voltage,
bit 6
Input Voltage,
bit 5
Input Voltage,
bit 4
Input Voltage,
bit 3
Input Voltage,
bit 2
R/W
5
R/W
4
R/W
3
R/W
2
R/W
1
R/W
0
7
6
Input Voltage,
bit 1
Input Voltage,
bit 0
Reserved
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-48. InputVoltage Register (I2C address = 0Bh) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7-6
Reserved
R/W
00b
Not used. 1 = invalid write.
5
4
3
2
1
0
Input Voltage, bit 7
Input Voltage, bit 6
Input Voltage, bit 5
Input Voltage, bit 4
Input Voltage, bit 3
Input Voltage, bit 2
R/W
R/W
R/W
R/W
R/W
R/W
0b
0b
0b
0b
0b
0b
0 = Adds 0 mV of input voltage.
1 = Adds 8192 mV of input voltage.
0 = Adds 0 mV of input voltage.
1 = Adds 4096 mV of input voltage.
0 = Adds 0 mV of input voltage.
1 = Adds 2048 mV of input voltage.
0 = Adds 0 mV of input voltage.
1 = Adds 1024 mV of input voltage.
0 = Adds 0 mV of input voltage.
1 = Adds 512 mV of input voltage.
0 = Adds 0 mV of input voltage.
1 = Adds 256 mV of input voltage.
Table 9-49. InputVoltage Register (I2C address = 0Ah) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
Input Voltage, bit 1
R/W
0b
0 = Adds 0 mV of input voltage.
1 = Adds 128 mV of input voltage.
6
Input Voltage, bit 0
Reserved
R/W
R/W
0b
0 = Adds 0 mV of input voltage.
1 = Adds 64 mV of input voltage
5-0
000000b
Not used. Value Ignored.
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9.6.22 VSYS_MIN Register (I2C address = 0D/0Ch) [reset value based on CELL_BATPRESZ pin setting]
To set the minimum system voltage, write a 16-bit VSYS_MIN register command (REG0x3E()) using the data
format listed in Figure 9-35, Table 9-50 , and Table 9-51 . The charger provides minimum system voltage range
from 1.0V to 23.0V, with 100-mV step resolution. Any write below 1.0V or above 23.0V is ignored. Upon POR,
the VSYS_MIN register is 3.6 V for 1 S, 6.6V for 2 S and 9.2 V for 3 S, and 12.3 V for 4 S, and 15.4 V for 5S.
Writing VSYS_MIN to 0 will set it to the default value based on CELL_BATPRESZ pin.
Figure 9-35. VSYS_MIN Register (I2C address = 0D/0Ch) [reset value based on CELL_BATPRESZ pin
setting]
7
6
5
4
3
2
1
0
VSYS_MIN, bit VSYS_MIN, bit VSYS_MIN, bit VSYS_MIN, bit VSYS_MIN, bit VSYS_MIN, bit VSYS_MIN, bit VSYS_MIN, bit
7
R/W
7
6
R/W
6
5
R/W
5
4
R/W
4
3
R/W
3
2
R/W
2
1
R/W
1
0
R/W
0
Reserved
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-50. VSYS_MIN Register (I2C address = 0Dh) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
Min System Voltage, bit 7
R/W
0b
0 = Adds 0 mV of system voltage.
1 = Adds 12800 mV of system voltage.
6
5
4
3
2
1
0
Min System Voltage, bit 6
Min System Voltage, bit 5
Min System Voltage, bit 4
Min System Voltage, bit 3
Min System Voltage, bit 2
Min System Voltage, bit 1
Min System Voltage, bit 0
R/W
R/W
R/W
R/W
R/W
R/W
R/W
0b
0b
0b
0b
0b
0b
0b
0 = Adds 0 mV of system voltage.
1 = Adds 6400mV of system voltage.
0 = Adds 0 mV of system voltage.
1 = Adds 3200 mV of system voltage.
0 = Adds 0 mV of system voltage.
1 = Adds 1600 mV of system voltage.
0 = Adds 0 mV of system voltage.
1 = Adds 800 mV of system voltage.
0 = Adds 0 mV of system voltage.
1 = Adds 400 mV of system voltage.
0 = Adds 0 mV of system voltage.
1 = Adds 200 mV of system voltage.
0 = Adds 0 mV of system voltage.
1 = Adds 100 mV of system voltage.
Table 9-51. VSYS_MIN Register (I2C address = 0Ch) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7-0
Reserved
R/W
00000000
b
Not used. Value Ignored.
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9.6.23 IIN_HOST Register (I2C address = 0F/0Eh) [reset = 2000h]
To set the nominal or typical input current limit based on the adapter rated current. Write a 7-bit IIN_HOST
register command using the data format listed below.
When using a 10-mΩ sense resistor (RSNS_RAC=0b), the charger provides a nominal input-current limit range
of 50 mA to 6350 mA, with 50-mA resolution. The upper boundary is implemented through DAC clamp, writing
value higher than limitation will be neglected. The lower boundary is implemented through 50-mA offset at code
0. Note this offset is only applied to code 0, not applied to other codes. The default nominal input current limit is
3.25 A. Upon adapter removal, the input current limit is reset to the default value of 3.25 A.
When using a 5-mΩ sense resistor (RSNS_RAC=1b) referring to Section 9.3.5, the input-current limit range can
be found under certain IADPT pin, EN_FAST_5MOHM bit status. The lower boundary is implemented through
100-mA offset at code 0. Note this offset is only applied to code 0, not applied to other codes. The default current
limit is 3.2 A. Due to the USB current setting requirement, the register setting specifies the maximum current
instead of the typical current. Upon adapter removal, the nominal input current limit is reset to the default value
of 3.2 A.
To set the maximum input current limit based on adapter rated current. Additional 100-mA (10-mΩ sense
resistor)/200-mA (5-mΩ sense resistor) offset should be added based on above nominal input current limit to
obtain the maximum input current limit.
The ACP and ACN pins are used to sense RAC with the default value of 5 mΩ. For a 10-mΩ sense resistor, a
larger sense voltage is given and a better regulation accuracy, but at the cost of higher conduction loss.
Instead of using the internal IIN_DPM loop, the user can build up an external input current regulation loop and
have the feedback signal on the ILIM_HIZ pin.
In order to disable ILIM_HIZ pin, the host can write EN_EXTILIM=0b to disable ILIM_HIZ pin, or pull ILIM_HIZ
pin above 4.0 V.
Figure 9-36. IIN_HOST Register (I2C address = 0F/0Eh) [reset = 4100h]
7
6
5
4
3
2
1
0
Reserved
Input Current
Input Current
Input Current
Input Current
Input Current
Input Current
Input Current
set by host, bit set by host, bit set by host, bit set by host, bit set by host, bit set by host, bit set by host, bit
6
R/W
6
5
R/W
5
4
R/W
4
3
R/W
3
2
R/W
2
1
R/W
1
0
R/W
0
R/W
7
Reserved
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-52. IIN_HOST Register With 5-mΩ Sense Resistor (I2C address = 0Fh) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7
Reserved
R/W
0b
Not used. 1 = invalid write.
6
5
4
3
2
Input Current set by host, bit 6
Input Current set by host, bit 5
Input Current set by host, bit 4
Input Current set by host, bit 3
Input Current set by host, bit 2
R/W
R/W
R/W
R/W
R/W
0b
1b
0b
0b
0b
0 = Adds 0 mA of input current.
1 = Adds 6400 mA of input current.
0 = Adds 0 mA of input current.
1 = Adds 3200 mA of input current.
0 = Adds 0 mA of input current.
1 = Adds 1600 mA of input current.
0 = Adds 0 mA of input current.
1 = Adds 800 mA of input current.
0 = Adds 0 mA of input current.
1 = Adds 400 mA of input current.
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Table 9-52. IIN_HOST Register With 5-mΩ Sense Resistor (I2C address = 0Fh) Field Descriptions
(continued)
BIT
FIELD
TYPE
RESET
DESCRIPTION
1
Input Current set by host, bit 1
R/W
0b
0 = Adds 0 mA of input current.
1 = Adds 200 mA of input current.
0
Input Current set by host, bit 0
R/W
0b
0 = Adds 0 mA of input current.
1 = Adds 100 mA of input current.
Table 9-53. IIN_HOST Register With 5-mΩ Sense Resistor (I2C address = 0Eh) Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7-0
Reserved
R
00000000
b
Not used. Value Ignored.
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9.6.24 ID Registers
9.6.24.1 ManufactureID Register (I2C address = 2Eh) [reset = 40h]
Figure 9-37. ManufactureID Register (I2C address = 2Eh) [reset = 40h]
7-0
Manufacturer ID
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-54. ManufactureID Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION (READ ONLY)
7-0
MANUFACTURE_ID
R
40h
40h
9.6.24.2 Device ID (DeviceAddress) Register (I2C address = 2Fh) [reset = D5h]
Figure 9-38. Device ID (DeviceAddress) Register (I2C address = 2Fh) [reset = D5h]
7-0
DEVICE_ID
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-55. Device ID (DeviceAddress) Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
7-0
DEVICE_ID
R
BQ25730: 11 01 0101b (D5h)
BQ25730: 11 01 0101b (D5h)
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10 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
10.1 Application Information
The BQ2573xEVM evaluation module (EVM) is a complete charger module for evaluating the BQ25730. The
application curves were taken using the BQ2573xEVM.
As shown in Figure 10-1, at the charger VSYS terminal, a minimum 7-μF effective MLCC capacitance (7 × 10-μF
0603 package MLCC) is suggested for a 45-W to 65-W adapter, and two more 10-μF MLCC capacitors are
needed when power reaches 90 W. Overall 50-μF effective capacitance on VSYS net is necessary (POSCAP
is preferred). These capacitors do not have to be placed at the charger VSYS output terminal; all capacitors
connected to VSYS net can be counted including the input capacitor of the next stage converters.
10.2 Typical Application
VSYS
2x33uF
4.7uH
RAC=5m ꢀꢁ m
RSR=5m ꢀꢁ m
VBUS
!"!
Q2
BATT
(1-5s)
Q3
Q1
Q4
1nF
10nF
33nF
47nF
47nF
1uF
6x10uF
7x10uF
2x10uF
0.1uF
10
1.0uF
1x33uF
(Optional)
#"$$
#"$$
HIDRV1
HIDRV2
10
SYS
BATDRV
SRP
33nF
10nF
ACN
ACP
10
SRN
VDDA
ILIM_HIZ
380k
220k
REGN
REGN
1uF
2.2–3.3uF
VDDA
PGND
BQ25730
350k
VBUS
CELL_BATPRES
250k
4.7nF 40.2k
33pF
COMP1
COMP2
IADPT
IBAT
PSYS
15pF
100pF
100pF
191k
680pF
15k
10k
30k
PROCHOT
3.3V or 1.8V
To Host
10k
10k
10k
3.3V or 1.8V
10k
Host
(I2C)
Figure 10-1. Application Diagram of BQ25730 with Power Path
10.2.1 Design Requirements
DESIGN PARAMETER
EXAMPLE VALUE
3.5 V < Adapter Voltage < 26V
Input Voltage(2)
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DESIGN PARAMETER
EXAMPLE VALUE
3.2 A for 65-W adapter
8400 mV for 2s battery
3072 mA for 2s battery
6600 mV for 2s battery
Input Current Limit (2)
Battery Charge Voltage(1)
Battery Charge Current(1)
Minimum System Voltage(1)
(1) Refer to battery specification for settings.
(2) Refer to adapter specification for settings for Input Voltage and Input Current Limit.
10.2.2 Detailed Design Procedure
The parameters are configurable using the evaluation software. The simplified application circuit (see Figure
10-1, as the application diagram) shows the minimum component requirements. Inductor, capacitor, and
MOSFET selection are explained in the rest of this section. Refer to the EVM user's guide for the complete
application schematic.
10.2.2.1 Input Snubber and Filter for Voltage Spike Damping
During adapter hot plug-in, the parasitic inductance and input capacitor from the adapter cable form a second
order system. The voltage spike at VBUS pin maybe beyond IC maximum voltage rating and damage IC. The
input filter must be carefully designed and tested to prevent overvoltage event on VBUS pin.
There are several methods to damp or limit the overvoltage spike during adapter hot plug-in. An electrolytic
capacitor with high ESR as an input capacitor can damp the overvoltage spike well below the IC maximum pin
voltage rating. A high current capability TVS Zener diode can also limit the overvoltage level to an IC safe level.
However these two solutions may not save cost or have small size.
A cost effective and small size solution is shown in Figure 10-2. The R1 and C1 are composed of a damping RC
network to damp the hot plug-in oscillation. As a result the over voltage spike is limited to a safe level. D1 is used
for reverse voltage protection for VBUS pin. C2 is VBUS pin decoupling capacitor and it should be placed as
close as possible to VBUS pin. C2 value should be less than C1 value so R1 can dominate the equivalent ESR
value to get enough damping effect. R2 is used to limit inrush current of D1 to prevent D1 getting damage when
adapter hot plug-in. R2 and C2 should have 10-µs time constant to limit the dv/dt on VBUS pin to reduce inrush
current when adapter hot plug in. R1 has high inrush current. R1 package must be sized enough to handle
inrush current power loss according to resistor manufacturer’s data sheet. The filter components' value always
need to be verified with real application and minor adjustments may need to fit in the real application circuit.
D1
R2(0805)
1W
R1(2010)
2W
Adapter
connector
VBUS pin
C1
2.2mF
C2
0.47-1mF
Figure 10-2. Input Filter
10.2.2.2 ACP-ACN Input Filter
The BQ25730 has average current mode control. The input current sensing through ACP/ACN is critical to
recover inductor current ripple. Parasitic inductance on board will generate high frequency ringing on ACP-
ACN which overwhelms converter sensed inductor current information. It is also difficult to manage parasitic
inductance created based on different PCB layout. Larger parasitic inductance will generate larger sense current
ringing which could cause the average current control loop to go into oscillation. Therefore ACP-ACN sensing
information need to be conditioned.
For real system board condition, we suggest using below circuit design to get best result and filter noise induced
from different PCB parasitic factor. With time constant of filter from 47 ns to 200 ns, the filter is effective and the
delay of on the sensed signal is small, therefore there is no concern for average current mode control. If 400-kHz
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switching frequency is employed, 10 nF is recommended for CDIFF; if 800-kHz switching frequency is chosen,
then CDIFF can be left open.
RAC
Q1
6x10uF
RACN
RACP
4.99ohm
4.99ohm
10nF(0402) 1nF(0402)
CDIFF
10nF for 400kHz
Open for 800kHz
CACN
33nF
CACP
33nF
ACP
ACN
HIDRV1
Figure 10-3. ACN-ACP Input Filter
10.2.2.3 Inductor Selection
The BQ25730 has two selectable fixed switching frequency. Higher switching frequency allows the use of
smaller inductor and capacitor values. Inductor saturation current should be higher than the charging current
(ICHG) plus half the ripple current (IRIPPLE):
ISAT ³ ICHG + (1/2) IRIPPLE
(2)
The inductor ripple current in buck operation depends on input voltage (VIN), duty cycle (DBUCK = VOUT/VIN),
switching frequency (fS) and inductance (L):
IRIPPLE_BUCK = VIN × DBUCK× (1-DBUCK) / (fS × L)
During boost operation, the duty cycle is:
(3)
DBOOST = 1 – (VIN/VBAT
)
and the ripple current is:
IRIPPLE_BOOST = (VIN × DBOOST) / (fS × L)
The maximum inductor ripple current happens with D = 0.5 or close to 0.5. For example, the battery charging
voltage range is from 9 V to 12.6 V for 3-cell battery pack. For 20-V adapter voltage, 10-V battery voltage gives
the maximum inductor ripple current. Another example is 4-cell battery, the battery voltage range is from 12 V to
16.8 V, and 12-V battery voltage gives the maximum inductor ripple current.
Usually inductor ripple is designed in the range of (20 – 40%) maximum charging current as a trade-off between
inductor size and efficiency for a practical design.
10.2.2.4 Input Capacitor
Input capacitor should have enough ripple current rating to absorb input switching ripple current. The worst case
RMS ripple current is half of the charging current (plus system current there is any system load) when duty cycle
is 0.5 in buck mode. If the converter does not operate at 50% duty cycle, then the worst case capacitor RMS
current occurs where the duty cycle is closest to 50% and can be estimated by Equation 4:
ICIN = ICHG
´
D × (1 - D)
(4)
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Low ESR ceramic capacitor such as X7R or X5R is preferred for input decoupling capacitor and should be
placed in front of RAC current sensing and as close as possible to the power stage half bridge MOSFETs.
Capacitance after RAC before power stage half bridge should be limited to 10 nF + 1 nF referring to Figure 10-3
diagram. Because too large capacitance after RAC could filter out RAC current sensing ripple information. Voltage
rating of the capacitor must be higher than normal input voltage level, 25-V rating or higher capacitor is preferred
for 19-V to 20-V input voltage.
Ceramic capacitors (MLCC) show a dc-bias effect. This effect reduces the effective capacitance when a dc-bias
voltage is applied across a ceramic capacitor, as on the input capacitor of a charger. The effect may lead
to a significant capacitance drop, especially for high input voltages and small capacitor packages. See the
manufacturer's data sheet about the derating performance with a dc bias voltage applied. It may be necessary
to choose a higher voltage rating or nominal capacitance value in order to get the required effective capacitance
value at the operating point.
10.2.2.5 Output Capacitor
Output capacitor also should have enough ripple current rating to absorb output switching ripple current. To
get good loop stability, the resonant frequency of the output inductor and output capacitor should be designed
between 10 kHz and 20 kHz. The preferred ceramic capacitor is 25-V X7R or X5R for output capacitor. Minimum
7 pcs of 10-μF 0603 package capacitor is suggested to be placed as close as possible to Q3&Q4 half bridge
(between Q4 drain and Q3 source terminal). Total minimum output effective capacitance along VSYS distribution
line is 50 μF refers to Table 10-1. Recommend to place minimum 20-μF MLCC capacitors after the charge
current sense resistor for best stability.
Ceramic capacitors show a dc-bias effect. This effect reduces the effective capacitance when a dc-bias
voltage is applied across a ceramic capacitor, as on the output capacitor of a charger. The effect may lead
to a significant capacitance drop, especially for high output voltages and small capacitor packages. See the
manufacturer's data sheet about the derating performance with a dc bias voltage applied. It may be necessary
to choose a higher voltage rating or nominal capacitance value in order to get the required capacitance value at
the operating point. Considering the 25-V 0603 package MLCC capacitance derating under 21-V to 23-V output
voltage, the recommended practical capacitors configuration at VSYS output terminal can also be found in
Table 10-1. Tantalum capacitors (POSCAP) can avoid dc-bias effect and temperature variation effect which are
recommend to be used along VSYS output distribution line to meet total minimum effective output capacitance
requirement.
Table 10-1. Minimum Output Capacitance Requirement
OUTPUT CAPACITORS vs TOTAL INPUT
65 W
90 W
130 W
POWER
Minimum Effective Output Capacitance
50 μF
50 μF
50 μF
Minimum output capacitors at charger VSYS 7*10 μF (0603 25 V MLCC)
output terminal
9*10 μF (0603 25 V MLCC)
9*10 μF (0603 25 V MLCC)
Additional output capacitors along VSYS
distribution line
2*22 μF (25 V~35 V
POSCAP)
2*22 μF (25 V~35 V
POSCAP)
2*22 μF (25 V~35 V
POSCAP)
10.2.2.6 Power MOSFETs Selection
Four external N-channel MOSFETs are used for a synchronous switching battery charger. The gate drivers are
integrated into the IC with 6 V of gate drive voltage. 30 V or higher voltage rating MOSFETs are preferred for
19-V to 20-V input voltage.
Figure-of-merit (FOM) is usually used for selecting proper MOSFET based on a tradeoff between the conduction
loss and switching loss. For the top side MOSFET, FOM is defined as the product of a MOSFET's on-resistance,
RDS(ON), and the gate-to-drain charge, QGD. For the bottom side MOSFET, FOM is defined as the product of the
MOSFET's on-resistance, RDS(ON), and the total gate charge, QG.
FOMtop = RDS(on) · QGD; FOMbottom = RDS(on) · QG
(5)
The lower the FOM value, the lower the total power loss. Usually lower RDS(ON) has higher cost with the same
package size.
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The top-side MOSFET loss includes conduction loss and switching loss. Taking buck mode operation as
an example the power loss is a function of duty cycle (D=VOUT/VIN), charging current (ICHG), MOSFET's on-
resistance (RDS(ON)_top), input voltage (VIN), switching frequency (fS), turn-on time (ton) and turn-off time (toff):
Ptop =Pcon_top+Psw_top
(6)
(7)
(8)
Pcon_top =D · IL_RMS 2 · RDS(on)_top
IL_RMS 2=IL_DC 2+Iripple 2/12
;
•
•
IL_DC is the average inductor DC current under buck mode;
Iripple is the inductor current ripple peak-to-peak value;
Psw_top =PIV_top+PQoss_top+PGate_top
;
(9)
The first item Pcon_top represents the conduction loss which is straight forward. The second term Psw_top
represents the multiple switching loss items in top MOSFET including voltage and current overlap losses
(PIV_top), MOSFET parasitic output capacitance loss (PQoss_top) and gate drive loss (PGate_top). To calculate
voltage and current overlap losses (PIV_top):
PIV_top =0.5x VIN · Ivalley · ton· fS+0.5x VIN · Ipeak · toff · fS
Ivalley =IL_DC- 0.5 · Iripple (inductor current valley value);
Ipeak =IL_DC+ 0.5 · Iripple (inductor current peak value);
(10)
(11)
(12)
•
•
ton is the MOSFET turn-on time that VDS falling time from VIN to almost zero (MOSFET turn on conduction
voltage);
toff is the MOSFET turn-off time that IDS falling time from Ipeak to zero;
The MOSFET turn-on and turn-off times are given by:
QSW QSW
, toff =
ton
=
Ion
Ioff
(13)
where Qsw is the switching charge, Ion is the turn-on gate driving current, and Ioff is the turn-off gate driving
current. If the switching charge is not given in MOSFET datasheet, it can be estimated by gate-to-drain charge
(QGD) and gate-to-source charge (QGS):
Qsw =QGD+QGS
(14)
Gate driving current can be estimated by REGN voltage (VREGN), MOSFET plateau voltage (Vplt), total turn-on
gate resistance (Ron), and turn-off gate resistance (Roff) of the gate driver:
VREGN - Vplt
Vplt
Ion
=
, Ioff =
Ron
Roff
(15)
(16)
To calculate top MOSFET parasitic output capacitance loss (PQoss_top):
PQoss_top =0.5 · VIN· Qoss · fS
•
Qoss is the MOSFET parasitic output charge which can be found in MOSFET datasheet;
To calculate top MOSFET gate drive loss (PGate_top):
PGate_top =VIN· QGate_top · fS
(17)
•
QGate_top is the top MOSFET gate charge which can be found in MOSFET datasheet;
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•
Note here VIN is used instead of real gate drive voltage 6 V because, the gate drive 6 V is generated based
on LDO from VIN under buck mode, the total gate drive related loss are all considered when VIN is used for
gate drive loss calculation .
The bottom-side MOSFET loss also includes conduction loss and switching loss:
Pbottom =Pcon_bottom+Psw_bottom
(18)
(19)
(20)
Pcon_bottom =(1 - D) · IL_RMS 2 · RDS(on)_bottom
;
Psw_bottom =PRR_bottom+PDead_bottom+PGate_bottom
;
The first item Pcon_bottom represents the conduction loss which is straight forward. The second term Psw_bottom
represents the multiple switching loss items in bottom MOSFET including reverse recovery losses (PRR_bottom),
Dead time body diode conduction loss (PDead_bottom) and gate drive loss (PGate_bottom). The detail calculation can
be found below:
PRR_bottom=VIN · Qrr · fS
(21)
•
Qrr is the bottom MOSFET reverse recovery charge which can be found in MOSFET data sheet;
PDead_bottom=VF · Ivalley · fS · tdead_rise+VF · Ipeak · fS · tdead_fall
(22)
•
•
•
VF is the body diode forward conduction voltage drop;
tdead_rise is the SW rising edge deadtime between top and bottom MOSFETs which is around 40 ns;
tdead_fall is the SW falling edge deadtime between top and bottom MOSFETs which is around 30 ns;
PGate_bottom can follow the same method as top MOSFET gate drive loss calculation approach refer to Equation
17.
P-channel MOSFETs is used for battery charging BATFET. The gate drivers are internally integrated into the IC
with 10 V of gate drive voltage. 20 V or higher voltage rating MOSFETs are preferred for 1- to 4-cell battery
application, 30 V or higher voltage rating MOSFETs are preferred for 5-cell battery application, the Ciss of
P-channel MOSFET should be chosen less than 5 nF.
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10.2.3 Application Curves
CH1: VBUS
CH2: VDDA
CH1: VBUS
CH2: VDDA
CH3: CHRG_OK
CH3: CHRG_OK
CH4: VSYS
CH4: VSYS
2-cell without battery
2-cell without battery
Figure 10-4. Power Up From 20 V
Figure 10-5. Power Up From 5 V
CH1: VBUS
CH1: VBUS
CH2: SW1
CH2: SW1
CH3: SW2
CH3: SW2
CH4: VSYS with 9Vos
CH4: IL
3-cell VBAT = 10 V
VBUS 5 V to 20 V
Figure 10-6. Power Off From 12 V
Figure 10-7. Line Regulation
CH2: SW1
CH1: HIDRV1
CH2: SW1
CH3: LODRV1
CH3: SW2
CH1: IL
CH4: IL
VBUS = 20 V, VSYS = 10 V, ISYS = 200 mA
VBUS = 20 V, VSYS = 10 V, ISYS = 2 A
Figure 10-8. PFM Operation
Figure 10-9. PWM Operation
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CH2: SW2
CH2: SW1
CH3: SW2
CH1: HIDRV2
CH3: LODRV2
CH4: IL
CH4: IL
VBUS = 5 V, VBAT = 10 V
VBUS = 12 V, VBAT = 12 V
Figure 10-10. Switching During Boost Mode
Figure 10-11. Switching During Buck Boost Mode
CH1: VSYS
CH2: IIN
CH1: VSYS
CH2: IIN
CH3: ISYS
CH3: ISYS
VBUS = 9 V/3.25 A, 3-cell, VSYS = 9 V, Without battery
VBUS = 12 V/3.25 A, 3-cell, VSYS = 9 V, Without battery
Figure 10-13. System Regulation in Buck Boost
Mode
Figure 10-12. System Regulation in Buck Mode
CH1: VSYS
CH2: IIN
CH2: IIN
CH3: ISYS
CH4: IBAT
CH3: ISYS
VBUS = 5 V/3.25 A, 3-cell, VSYS = 9 V, Without battery
VBUS = 20 V/3.25 A, VBAT = 7.5 V
Figure 10-14. System Regulation in Boost Mode
Figure 10-15. Input Current Regulation in Buck
Mode
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CH2:IIN
CH1: EN_OTG
CH2: VBUS
CH3:ISYS
CH4:IBAT
VBUS = 5 V/3.25 A, VBAT = 7.5 V
VBUS = 5 V
Figure 10-16. Input Current in Boost Mode
Figure 10-17. OTG Power Up from 8-V Battery
CH1: SCL
CH1: SCL
CH2: VBUS
CH2: VBUS
CH3: SW2
CH3: SW2
VBAT = 10 V, VBUS 5 V to 20 V, IOTG = 500 mA
Figure 10-19. OTG Power Off
Figure 10-18. OTG Voltage Ramp Up
CH2: VBUS
CH1:VBUS
CH2:FRS Pin
CH4:ISYS
CH3:IBUS
CH3: IVBUS
VBAT = 10 V, VBUS = 20 V
VBUS = 20 V, VOTG = 5 V, ISYS = 5 A,VBAT = 14.8 V
Figure 10-20. OTG Load Transient
Figure 10-21. FRS Transition Waveform
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VBUS = 20 V
TMAX = 20 ms
IIN_DPM = 2 A
TOVLD = 10 ms
ILIM2_VTH = 200%
VSYS_MIN = 12.3
V
VBUS = 20 V
TMAX = 20 ms
ISYS = 1 to 6 A
IIN_DPM = 2 A
TOVLD = 10 ms
ICHG = 0 A
ILIM2_VTH = 200%
VBAT = 12.8 V
ISYS = 1 to 6 A
ICHG = 0 A
Figure 10-23. Peak Power Mode IBUS Trigger
Figure 10-22. Peak Power Mode VSYS Trigger
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11 Power Supply Recommendations
The valid adapter range is from 3.5 V (VVBUS_CONVEN) to 26 V with at least 500-mA current rating. When
CHRG_OK goes HIGH, the system is powered from adapter through the charger. When adapter is removed, the
system is connected to battery through BATFET. Typically the battery depletion threshold should be greater than
the VSYS_MIN so that the battery capacity can be fully utilized for maximum battery run time.
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12 Layout
12.1 Layout Guidelines
Proper layout of the components to minimize high frequency current path loop (see Section 12.2) is important
to prevent electrical and magnetic field radiation and high frequency resonant problems. Here is a PCB layout
priority list for proper layout.
Table 12-1. PCB Layout Guidelines
RULES COMPONENTS
FUNCTION
IMPACT
GUIDELINES
1
PCB layer stack up Thermal, efficiency, Multi- layer PCB is suggested. Allocate at least one ground layer.
signal integrity
The BQ257XXEVM uses a 4-layer PCB (top layer, ground layer,
signal layer and bottom layer).
2
CBUS, RAC, Q1, Input loop
High frequency
noise, ripple
VBUS capacitors, RAC, Q1 and Q2 form a small loop 1. It is best
to put them on the same side. Connect them with large copper to
reduce the parasitic resistance. Move part of CBUS to the other
side of PCB for high density design. After RAC before Q1 and
Q2 power stage recommend to put 10 nF + 1 nF (0402 package)
decoupling capacitors as close as possible to IC to decoupling
switching loop high frequency noise.
Q2
3
4
5
RAC, Q1, L1, Q4
CSYS, Q3, Q4
QBAT, RSR
Current path
Output loop
Current path
Efficiency
The current path from VBUS to VSYS, through RAC, Q1, L1, Q4,
has low impedance. Pay attention to via resistance if they are not
on the same side. The number of vias can be estimated as 1 to
2A/via for a 10-mil via with 1 oz. copper thickness.
High frequency
noise, ripple
VSYS capacitors, Q3 and Q4 form a small loop 2. It is best to
put them on the same side. Connect them with large copper to
reduce the parasitic resistance. Move part of CSYS to the other
side of PCB for high density design.
Efficiency, battery
voltage detection
Place QBAT and RSR near the battery terminal. The current
path from VBAT to VSYS, through RSR and QBAT, has low
impedance. Pay attention to via resistance if they are not on the
same side. The device detects the battery voltage through SRN
near battery terminal.
6
7
Q1, Q2, L1, Q3,
Q4
Power stage
Thermal, efficiency Place Q1, Q2, L1, Q3 and Q4 next to each other. Allow
enough copper area for thermal dissipation. The copper area
is suggested to be 2x to 4x of the pad size. Multiple thermal
vias can be used to connect more copper layers together and
dissipate more heat.
RAC, RSR
Current sense
Regulation accuracy Use Kelvin-sensing technique for RAC and RSR current sense
resistors. Connect the current sense traces to the center of the
pads, and run current sense traces as differential pairs.
8
9
Small capacitors
BST capacitors
IC bypass caps
HS gate drive
Noise, jittering,
ripple
Place VBUS cap, VCC cap, REGN caps near IC.
High frequency
noise, ripple
Place HS MOSFET boost strap circuit capacitor close to IC and
on the same side of PCB board. Capacitors SW1/2 nodes are
recommended to use wide copper polygon to connect to power
stage and capacitors BST1/2 node are recommended to use at
least 8mil trace to connected to IC BST1/2 pins.
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Table 12-1. PCB Layout Guidelines (continued)
RULES COMPONENTS
FUNCTION
IMPACT
GUIDELINES
10
Ground partition
Measurement
Separate analog ground(AGND) and power grounds(PGND) is
accuracy, regulation preferred. PGND should be used for all power stage related
accuracy, jitters,
ripple
ground net. AGND should be used for all sensing, compensation
and control network ground for example ACP/ACN/COMP1/
COMP2/CMPIN/CMPOUT/IADPT/IBAT/PSYS. Connect all
analog grounds to a dedicated low-impedance copper plane,
which is tied to the power ground underneath the IC exposed
pad. If possible, use dedicated COMP1, COMP2 AGND traces.
Connect analog ground and power ground together using power
pad as the single ground connection point.
12.2 Layout Example
12.2.1 Layout Example Reference Top View
Based on the above layout guidelines, the buck-boost charger layout example top view is shown below including
all the key power components.
Figure 12-1. Buck-Boost Charger Layout Reference Example Top View
12.2.2 Inner Layer Layout and Routing Example
For both input sensing resistor and charging current sensing resistor, differential sensing and routing method are
suggested and highlighted in below figure. Use wide trace for gate drive traces, minimum 15 mil trace width.
Connect all analog grounds to a dedicated low-impedance copper plane, which is tied to the power ground
underneath the IC exposed pad. Suggest using dedicated COMP1, COMP2 analog ground traces shown in
below figure.
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Figure 12-2. Buck-Boost Charger Gate Drive/Current Sensing/AGND Signal Layer Routing Example
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13 Device and Documentation Support
13.1 Device Support
13.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
13.2 Documentation Support
13.2.1 Related Documentation
For related documentation see the following:
•
•
•
Semiconductor and IC Package Thermal Metrics Application Report
BQ2571x Evaluation Module User's Guide
QFN/SON PCB Attachment Application Report
13.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
13.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
13.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
13.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
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14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
BQ25730RSNR
ACTIVE
QFN
RSN
32
3000 RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
BQ25730
Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
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TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
BQ25730RSNR
QFN
RSN
32
3000
330.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
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TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
QFN RSN 32
SPQ
Length (mm) Width (mm) Height (mm)
367.0 367.0 35.0
BQ25730RSNR
3000
Pack Materials-Page 2
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