BQ27Z561YPHR-R2 [TI]
适用于 1 节锂离子电池组的 Impedance track 电池电量监测计解决方案 | YPH | 12 | -40 to 85;
| 型号： | BQ27Z561YPHR-R2 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 适用于 1 节锂离子电池组的 Impedance track 电池电量监测计解决方案 | YPH | 12 | -40 to 85 电池 |
| 文件： | 总27页 (文件大小：1383K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BQ27Z561-R2
ZHCSKS9B –FEBRUARY 2020 –REVISED NOVEMBER 2022
适用于1 芯锂离子电池组的
BQ27Z561-R2 Impedance Track™ 电池电量监测计解决方案
1 特性
3 说明
• 支持低至1mΩ的高侧和低侧电流检测电阻
• 支持电池组侧监测，包括增强型健康状况(SOH) 算
法
• 基于预测的OCV 的快速QMax 更新选项
• SHA-256 认证响应器，用于提高电池组安全性
• 精密的充电算法
德州仪器 (TI) BQ27Z561-R2 Impedance Track™ 电量
监测计解决方案是一个高度集成的高精度单芯电池电量
监测计，具有闪存可编程的定制精简指令集 CPU
(RISC) 和锂离子和锂聚合物电池组SHA-256 认证。单
节电池包括并联电芯，可提高容量。
BQ27Z561-R2 电量监测计通过 I2C 兼容接口和 HDQ
单线接口进行通信，并具有几个可帮助简化准确电量监
测的关键功能。通过集成的温度检测功能（内部和外部
选项），可实现系统和电池温度测量。
– JEITA
– 增强型充电
– RSOC() 充电补偿选项
• 两个独立的ADC
器件信息
– 支持电流和电压同步采样
– 高精度库伦计数器，输入失调电压误差< 1µV
（典型值）
器件型号(1)
BQ27Z561
BQ27Z561-R2
封装尺寸（标称值）
封装
DSBGA (12)
1.67mm × 2.05mm
• 低电压(2V) 运行
• 宽量程电流应用（1mA 至5A）
• 高电平有效或者低脉冲或电平中断引脚
• 支持电池跳闸点(BTP)
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附
录。
= Recommended for IEC ESD
1
• 节能模式（典型电池组运行范围条件）
= Optional alternate connection
2
Highside Protection
PACKP
– 典型睡眠模式：< 11μA
– 典型深度睡眠模式：< 9μA
– 典型休眠模式：< 3μA
C5
0.1 ꢁF
1
R1
10 ꢀ
1
C4
0.1 ꢁF
BAT
C1
1.0 uF
PACKN
R2
1 Kꢀ
1
BAT_SNS
1
INT
INT
– 典型关断模式：< 1.9μA
CELLP
Li-Ion
Cell
R2
1 Kꢀ
• 内部和外部温度检测功能
PULS
CE
TS
PULS
CE
2
R9
100 ꢀ
• 诊断使用寿命数据监控器和黑盒记录器
• 适用于高速编程和数据访问的400kHz I2C 总线通
信接口
SCL
C2
0.1 ꢁF
SCL
SDA
CELLN
RT1
103AT
SDA/HDQ
R8
100 ꢀ
VSS
SRP
SRN
GND
C3
0.1 ꢁF
• 用于主机通信的单线制HDQ
• 紧凑型12 引脚DSBGA 封装(YPH)
R3
1mꢀœ
10mꢀ
Lowside Protection
PACKN
2 应用
简化原理图
• 智能手机
• 数码相机和视频摄像机
• 平板电脑计算
• 便携式和可佩戴式健康设备
• 便携式音频设备
本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问
www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SLUSE22
BQ27Z561-R2
ZHCSKS9B –FEBRUARY 2020 –REVISED NOVEMBER 2022
www.ti.com.cn
Table of Contents
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 说明（续）.........................................................................3
6 Pin Configuration and Functions...................................3
7 Specifications.................................................................. 4
7.1 Absolute Maximum Ratings........................................ 4
7.2 ESD Ratings............................................................... 4
7.3 Recommended Operating Conditions.........................4
7.4 Thermal Information....................................................5
7.5 Supply Current............................................................5
7.6 Internal 1.8-V LDO (REG18).......................................5
7.7 I/O (PULS, INT)...........................................................5
7.8 Chip Enable (CE)........................................................5
7.9 Internal Temperature Sensor...................................... 6
7.10 NTC Thermistor Measurement Support....................6
7.11 Coulomb Counter (CC)............................................. 6
7.12 Analog Digital Converter (ADC)................................6
7.13 Internal Oscillator Specifications...............................7
7.14 Voltage Reference1 (REF1)......................................7
7.15 Voltage Reference2 (REF2)......................................7
7.16 Flash Memory........................................................... 7
7.17 I2C I/O....................................................................... 7
7.18 I2C Timing —100 kHz.............................................. 8
7.19 I2C Timing —400 kHz.............................................. 8
7.20 HDQ Timing.............................................................. 8
7.21 Typical Characteristics............................................10
8 Detailed Description......................................................11
8.1 Overview................................................................... 11
8.2 Functional Block Diagram......................................... 11
8.3 Feature Description...................................................11
8.4 Device Functional Modes..........................................13
9 Applications and Implementation................................14
9.1 Application Information............................................. 15
9.2 Typical Applications.................................................. 15
9.3 Power Supply Recommendations.............................18
9.4 Layout....................................................................... 18
10 Device and Documentation Support..........................20
10.1 Device Support....................................................... 20
10.2 Documentation Support.......................................... 20
10.3 Receiving Notification of Documentation Updates..20
10.4 支持资源..................................................................20
10.5 Trademarks.............................................................20
10.6 Electrostatic Discharge Caution..............................20
10.7 术语表..................................................................... 20
11 Mechanical, Packaging, and Orderable
Information.................................................................... 20
4 Revision History
注：以前版本的页码可能与当前版本的页码不同
Changes from Revision A (November 2021) to Revision B (November 2022)
Page
• Removed the CE reference in this section; added a new, separate section for CE........................................... 5
• Added the Chip Enable (CE) section for the CE pin thresholds that are assured by design..............................5
Changes from Revision * (February 2020) to Revision A (November 2021)
Page
• 更改了器件信息中的封装尺寸.............................................................................................................................1
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5 说明（续）
集成的SHA-256 功能有助于在系统和电池组之间实现安全识别。借助中断和BTP 功能，BQ27Z561-R2 器件可在
发生特定充电状态 (SOC)、电压或温度故障时通知系统。通过低电压运行，即使在深度放电情况下，系统也能够
持续监控电池的状态。在低活跃度情况下，可以将此器件设置为低功耗库伦计数(CC) 模式，从而在显著减小工作
电流的情况下继续进行库伦计数。
6 Pin Configuration and Functions
1
2
3
D
C
B
A
SRP
BAT
CE
SRN
TS
BAT_SNS
NU
VSS
SCL
INT
PULS
SDA/HDQ
Not to scale
图6-1. Pin Diagram
表6-1. Pin Functions
PIN
TYPE(1)
DESCRIPTION
NAME
BAT
NO.
Battery voltage measurement input. Kelvin battery sense connection to BAT_SNS. Connect a
capacitor (1 µF) between BAT and VSS. Place the capacitor close to the gauge.
D2
P
CE
D3
C2
A1
A2
B1
C3
I
Active-high chip enable
BAT_SNS
INT
AI
O
Battery sense
Interrupt for voltage, temperature, and state of charge (programmable active high or low)
Programmable pulse width with active-high or -low option
Temperature input for ADC
PULS
TS
O
AI
NC
NU
Makes no external connection
Serial clock for I2C interface that requires an external pullup when used. It can be left floating if
unused.
SCL
SDA/HDQ
SRP
B3
A3
D1
I/O
I/O
I
Serial data for I2C interface and one-wire interface for HDQ (selectable) that requires an external
pullup when used. It can be left floating if unused.
Analog input pin connected to the internal coulomb counter peripheral for integrating a small
voltage between SRP (positive side) and SRN
Analog input pin connected to the internal coulomb counter peripheral for integrating a small
voltage between SRP (positive side) and SRN
SRN
VSS
C1
B2
I
P
Device ground
(1) P = Power Connection, O = Digital Output, AI = Analog Input, I = Digital Input, I/O = Digital Input/Output, NU = Not Used
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7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
–0.3
–0.3
–40
–40
–65
MAX
UNIT
V
BAT
6
6
INT, PULS, CE
V
Input Voltage
SRP, SRN, BAT_SNS
TS
VBAT + 0.3
V
V
2.1
6
SCL, SDA/HDQ
V
Operating ambient temperature, TA
Operating junction temperature, TJ
Storage temperature, Tstg
85
°C
°C
°C
125
150
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and
this may affect device reliability, functionality, performance, and shorten the device lifetime.
7.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM) on all pins, per ANSI/ESDA/
JEDEC JS-001(1)
±1500
V(ESD) Electrostatic discharge
V
Charged-device model (CDM) on all pins, per ANSI/ESDA/
JEDEC JS-002(2)
±500
(1) JEDEC document JEP155 states that 500-V HBM enables safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM enables safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
MIN
NOM
MAX
UNIT
VBAT
CBAT
Supply voltage
No operating restrictions
2.0
5.5
V
External capacitor from BAT to
VSS
1
0
0
µF
V
VTS
Temperature sense
Input and output pins
1.8
VPULS
,
VBAT
V
VINT, VCE
VSCL
VSDA/HDQ
,
Communication pins
0
VBAT
V
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7.4 Thermal Information
Over-operating free-air temperature range (unless otherwise noted)
BQ27Z561-R2
THERMAL METRIC(1)
DSBGA (YPH)
(12 PINS)
64.1
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
RθJC(top)
RθJB
59.8
52.7
°C/W
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
0.3
ψJT
28.3
ψJB
RθJC(bot)
2.4
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics Application
Report.
7.5 Supply Current
Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
PARAMETER
TEST CONDITIONS
MIN
TYP
60
11
9
MAX
UNIT
µA
INORMAL
Standard operating conditions
ISLEEP
Sense resistor current below SLEEP mode threshold
Sense resistor current below DEEP SLEEP mode threshold
CE = VIH, OFF state with ability to wake from valid communication
CE = VIL
µA
IDEEPSLEEP
IHIBERNATE
IOFF
µA
3
µA
0.5
µA
7.6 Internal 1.8-V LDO (REG18)
Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
PARAMETER
TEST CONDITIONS
MIN
1.6
TYP
MAX
2.0
UNIT
VREG18
VPORth
VPORhy
Regulator output voltage
POR threshold
1.8
V
V
V
Rising threshold
1.45
1.7
POR hysteresis
0.1
7.7 I/O (PULS, INT)
Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
VIH
VIL
VOL
CI
High-level input voltage
Low-level input voltage low
Output voltage low
VREG18 = 1.8 V
1.15
VREG18 = 1.8 V
0.50
0.4
V
VREG18 = 1.8 V, IOL = 1 mA
V
Input capacitance
5
pF
µA
Ilkg
Input leakage current
1
7.8 Chip Enable (CE)
Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
High-level input voltage (assured by
design)
VIH
VIL
VREG18 = 1.8 V
0.75 × VBAT
V
Low-level input voltage low (assured
by design)
VREG18 = 1.8 V
0.25 × VBAT
V
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7.9 Internal Temperature Sensor
Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
PARAMETER
TEST CONDITIONS
MIN
1.65
0.17
TYP
1.73
0.18
MAX
UNIT
VTEMPP
1.8
Internal temperature sensor voltage
drift
V(TEMP)
mV/°C
0.19
V
TEMPP –VTEMPN (assured by design)
7.10 NTC Thermistor Measurement Support
Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RNTRC(PU)
Internal pullup resistance
14.4
18
21.6
kΩ
Resistance drift over
temperature
RNTC(DRIFT)
0
PPM/°C
–250
–120
7.11 Coulomb Counter (CC)
Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Differential input voltage
range
V(CC_IN)
0.1
V
–0.1
t(CC_CONV)
Conversion time
Single conversion
1000
3.8
ms
µV
Effective resolution
1 LSB
16-bit, best fit over input voltage
range
Integral nonlinearity
5.2
+22.3
+2.6
LSB
–22.3
Differential nonlinearity
Offset error
16-bit, no missing codes
1.5
1.3
LSB
LSB
16- bit post calibration
–2.6
–492
7
Offset error drift
Gain error
15-bit + sign, post calibration
15-bit + sign, over input voltage range
15-bit + sign, over input voltage range
0.04
131
4.3
0.07 LSB/°C
+492 LSB
Gain error drift
9.8 LSB/°C
Effective input resistance
MΩ
7.12 Analog Digital Converter (ADC)
Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
PARAMETER
TEST CONDITIONS
MIN
–0.2
–0.2
–0.2
–8.4
TYP
MAX
UNIT
V
VFS = VREF2
1.0
1.44
5.5
VADC_TS_GPIO
VBAT_MODE
Input voltage range
VFS = VREG18 × 2
V
Battery input voltage
Integral nonlinearity
Differential nonlinearity
Offset error
V
+8.4
LSB
LSB
LSB
16-bit, best fit, –0.1 V to 0.8 × VREF2
16-bit, no missing codes
1.5
1.8
0.02
131
2
16-bit post calibration(1), VFS = VREF2
16-bit post calibration(1), VFS = VREF2
16-bit, –0.1 to 0.8 × VFS
+4.2
–4.2
–492
8
Offset error drift
0.1 LSB/°C
Gain Error
+492
LSB
Gain error drift
4.5 LSB/°C
16-bit, –0.1 to 0.8 × VFS
Effective input resistance
Conversion time
MΩ
ms
t(ADC_CONV)
11.7
15
Effective resolution
14
bits
(1) Factory calibration
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7.13 Internal Oscillator Specifications
Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
High Frequency Oscillator (HFO)
fHFO
Operating frequency
16.78
MHz
2.5%
3.5
TA = –20°C to 70°C
–2.5%
–3.5
fHFO
HFO frequency drift
TA = –40°C to 85°C
TA = –40°C to 85°C, oscillator
frequency within +/–3% of nominal
frequency or a power-on reset
tHFOSTART
HFO start-up time
4
ms
Low Frequency Oscillator (LFO)
fLFO
Operating frequency
Frequency error
65.536
kHz
fLFO(ERR)
+2.5%
TA = –40°C to 85°C
–2.5%
7.14 Voltage Reference1 (REF1)
Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
PARAMETER
TEST CONDITIONS
MIN
1.195
–80
TYP
MAX
UNIT
VREF1
Internal reference voltage(1)
1.21
1.227
V
VREF1_DRIFT
Internal reference voltage drift
+80 PPM/C
TA = –40 °C to 85°C
(1) Used for CC and LDO
7.15 Voltage Reference2 (REF2)
Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
PARAMETER
TEST CONDITIONS
MIN
1.2
TYP
MAX
UNIT
VREF2
Internal reference voltage(1)
1.21
1.22
V
VREF2_DRIFT
Internal reference voltage drift
20 PPM/°C
TA = –40 °C to 85°C
–20
(1) Used for ADC
7.16 Flash Memory
Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
PARAMETER
TEST CONDITIONS
MIN
10
TYP
MAX
UNIT
Years
Cycles
Cycles
µs
Data retention
100
Data Flash
20000
1000
Flash programming write
cycles
Instruction Flash
t(ROWPROG)
t(MASSERASE)
t(PAGEERASE)
IFLASHREAD
IFLASHWRTIE
IFLASHERASE
Row programming time
Mass-erase time
40
40
40
1
ms
TA = –40°C to 85°C
TA = –40°C to 85°C
TA = –40°C to 85°C
TA = –40°C to 85°C
TA = –40°C to 85°C
Page-erase time
ms
Flash read current
Flash write current
Flash erase current
mA
5
mA
15
mA
7.17 I2C I/O
Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
PARAMETER
TEST CONDITIONS
SCL, SDA/HDQ, VREG18 = 1.8 V
VREG18 = 1.8 V
MIN
TYP
MAX
UNIT
V
VIH
VIL
High-level input voltage
Low-level input voltage low
1.26
0.54
V
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Unless otherwise noted, characteristics noted under conditions of TA = –40℃to 85℃
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
VOL
CI
Low-level output voltage
Input capacitance
Input leakage current
IOL = 1 mA, VREG18 = 1.8 V
0.36
10
pF
Ilkg
1
µA
7.18 I2C Timing —100 kHz
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
kHz
µs
fSCL
Clock operating frequency
Start condition hold time
Low period of the SCL Clock
High period of the SCL Clock
Setup repeated START
Data hold time (SDA input)
Data setup time (SDA input)
Clock rise time
SCL duty cycle = 50%
100
tHD:STA
tLOW
tHIGH
tSU:STA
tHD:DAT
tSU:DAT
tr
4.0
4.7
4.0
4.7
0
µs
µs
µs
ns
250
ns
10% to 90%
90% to 10%
1000
300
ns
tf
Clock fall time
ns
tSU:STO
Setup time STOP condition
4.0
4.7
µs
Bus free time STOP to
START
tBUF
µs
7.19 I2C Timing —400 kHz
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
kHz
µs
fSCL
Clock operating frequency
START condition hold time
Low period of the SCL Clock
High period of the SCL Clock
Setup repeated START
Data hold time (SDA input)
Data setup time (SDA input)
Clock rise time
SCL duty cycle = 50%
400
tHD:STA
tLOW
tHIGH
tSU:STA
tHD:DAT
tSU:DAT
tr
0.6
1.3
600
600
0
µs
ns
ns
ns
100
ns
10% to 90%
90% to 10%
300
300
ns
tf
Clock fall time
ns
tSU:STO
Setup time STOP condition
0.6
1.3
µs
Bus free time STOP to
START
tBUF
µs
7.20 HDQ Timing
PARAMETER
TEST CONDITIONS
MIN
190
40
NOM
MAX
UNIT
µs
tB
Break time
tBR
Break recovery time
Host write 1 time
µs
tHW1
tHW0
tCYCH
tCYCD
tDW1
tDW0
tRSPS
Host drives HDQ
Host drives HDQ
Device drives HDQ
Device drives HDQ
Device drives HDQ
Device drives HDQ
Device drives HDQ
0.5
86
50
µs
Host write 0 time
145
µs
Cycle time, host to device
Cycle time, device to Host
Device write 1 time
Device write 0 time
Device response time
190
190
32
µs
205
250
50
µs
µs
80
145
950
µs
190
µs
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PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
µs
Host drives HDQ after device drives
HDQ
tTRND
tRISE
tRST
Host turn around time
HDQ line rising time to logic 1
HDQ Reset
250
1.8
µs
Host drives HDQ low before device
reset
2.2
s
SDA
t
BUF
t
t
LOW
t
f
HD;STA
t
r
t
t
SP
t
r
f
SCL
t
t
SU;STA
t
SU;STO
HD;STA
t
HIGH
t
t
SU;DAT
HD;DAT
STOP START
START
REPEATED
START
图7-1. I2C Timing
1.2V
t
t
(R ISE)
(BR )
t
(B)
(b) H D Q line rise tim e
(a) Break and Break R ecovery
t
(D W 1)
t
(H W 1)
t
(D W 0)
(C YC D )
t
(H W 0)
(C YC H )
t
t
(d) Gauge Transm itted Bit
(c) H ost Transm itted Bit
7-bit address
1-bit
R/W
8-bit data
Break
t
(R SPS)
(e) Gauge to Host Response
t
(R ST )
(f) H D Q R eset
a . H D Q Bre a kin g
b . R ise tim e o f H D Q lin e
c. H D Q H o st to fu e l g a u g e co m m u n ica tio n
d . Fu e l g a u g e to H o st co m m u n ica tio n
e . Fu e l g a u g e to H o st re sp o n se fo rm a t
f. H D Q H o st to fu e l g a u g e
图7-2. HDQ Timing
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7.21 Typical Characteristics
1.21
1.208
1.206
1.204
1.202
1.8
1.795
1.79
Min
Nom
Max
1.785
1.78
Min
Nom
Max
1.2
-60
-40
-20
0
20
40
60
80
100
-60
-40
-20
0
20
40
60
80
100
D002
Temperature (èC)
Temperature (èC)
D001
BAT Min = 2 V
BAT Nom = 3.6 V
BAT Max = 5 V
BAT Min = 2 V
BAT Nom = 3.6 V
BAT Max = 5 V
图7-3. REF1 Voltage Versus Battery and
图7-4. LDO Voltage Versus Battery and
Temperature
Temperature
66
20
15
10
5
Min
Nom
Max
65.8
65.6
65.4
65.2
65
0
Min
Nom
Max
-5
64.8
-10
-60
-40
-20
0
20
40
60
80
100
-60
-40
-20
0
20
40
60
80
100
Temperature (èC)
Temperature (èC)
D003
D004
BAT Min = 2 V
BAT Nom = 3.6 V
BAT Max = 5 V
BAT Min = 2 V
BAT Nom = 3.6 V
BAT Max = 5 V
图7-5. LFO Frequency Versus Battery and
图7-6. ADVC Offset Voltage Versus Battery and
Temperature
Temperature
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8 Detailed Description
8.1 Overview
The BQ27Z561-R2 gas gauge is a fully integrated battery manager that employs flash-based firmware to provide
a complete solution for battery-stack architectures composed of 1-series cells. The BQ27Z561-R2 device
interfaces with a host system through an I2C or HDQ protocol. High-performance, integrated analog peripherals
enable support for a sense resistor down to 1 mΩ, and simultaneous current/voltage data conversion for instant
power calculations. The following sections detail all of the major component blocks included as part of the
BQ27Z561-R2 device.
8.2 Functional Block Diagram
VSS
TS
BAT_SNS
BAT
GPIO
Internal
temperature
sensor
REG18
CE
ADC
MUX
REF1
CC
SRP
SRN
ADC
REF2
HFO
LFO
INT
PULS
IO and
interrupt
controller
SDA/HDQ
SCL
Test
interface
CC/ADC
digital filter
COM
engine
Timers
bqBMP
CPU
PMInstr
(8 bit)
PMAddr
(16 bit)
ROM
12-
kBytes
Program flash
32-kBytes
Data flash
4-kBytes
Data SRAM
2-kBytes
8.3 Feature Description
8.3.1 BQ27Z561-R2 Processor
The BQ27Z561-R2 device uses a custom TI-proprietary processor design that features a Harvard architecture
and operates at frequencies up to 4.2 MHz. Using an adaptive, three-stage instruction pipeline, the BQ27Z561-
R2 processor supports variable instruction lengths of 8, 16, or 24 bits.
8.3.2 Battery Parameter Measurements
The BQ27Z561-R2 device measures cell voltage and current simultaneously, and also measures temperature to
calculate the information related to the following:
Remaining capacity
Full charge capacity
State-of-health
Other gauging parameters.
8.3.2.1 Coulomb Counter (CC)
The first ADC is an integrating analog-to-digital converter designed specifically for tracking charge and discharge
activity, or coulomb counting, of a rechargeable battery. It features a single-channel differential input that
converts the voltage difference across a sense resistor between the SRP and SRN pins with a resolution of 3.74
µV.
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8.3.2.2 CC Digital Filter
The CC digital filter generates a 16-bit conversion value from the delta-sigma CC front end. Its FIR filter uses the
HFO clock output. New conversions are available every 1 s.
8.3.2.3 ADC Multiplexer
The ADC multiplexer provides selectable connections to the following:
External pins BAT, BAT_SNS, TS
Internal temperature sensor
Internal reference voltages
Internal 1.8-V regulator
VSS ground reference input
In addition, the multiplexer can independently enable the TS input connection to the internal thermistor biasing
circuitry, and enables the user to short the multiplexer inputs for test and calibration purposes.
8.3.2.4 Analog-to-Digital Converter (ADC)
The second ADC is a 16-bit delta-sigma converter designed for general-purpose measurements. The ADC
automatically scales the input voltage range during sampling based on channel selection. The converter
resolution is a function of its full-scale range and number of bits, yielding a 38-µV resolution.
8.3.2.5 Internal Temperature Sensor
An internal temperature sensor is available on the BQ27Z561-R2 device to reduce the cost, power, and size of
the external components necessary to measure temperature. It is available for connection to the ADC using the
multiplexer, and is ideal for quickly determining pack temperature under a variety of operating conditions.
8.3.2.6 External Temperature Sensor Support
The TS input is enabled with an internal 18-kΩ (typical) linearization pullup resistor to support the use of a 10-
kΩ (25°C) NTC external thermistor, such as the Semitec 103AT-2. The NTC thermistor should be connected
between VSS and the individual TS pin. The ADC, through its input multiplexer, then takes the analog
measurement. If a different thermistor type is required, then changes to configurations might be required.
REG18
TS
ADC
NTC
图8-1. External Thermistor Biasing
8.3.3 Power Supply Control
The BQ27Z561-R2 device uses the BAT pin as its power source. BAT powers the internal voltage sources that
supply references for the device. BAT_SNS is a noncurrent carrying path and used at the Kelvin reference for
BAT.
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8.3.4 Bus Communication Interface
The BQ27Z561-R2 device has an I2C bus communication interface. Alternatively, the BQ27Z561-R2 can be
configured to communicate through the HDQ pin (shared with SDA).
备注
Once the device is switched to the HDQ protocol, it is not reversible.
8.3.5 Low Frequency Oscillator
The BQ27Z561-R2 device includes a low frequency oscillator (LFO) running at 65.536 kHz.
8.3.6 High Frequency Oscillator
The BQ27Z561-R2 includes a high frequency oscillator (HFO) running at 16.78 MHz. It is frequency locked to
the LFO output and scaled down to 8.388 MHz with a 50% duty cycle.
8.3.7 1.8-V Low Dropout Regulator
The BQ27Z561-R2 device contains an integrated capacitor-less 1.8-V LDO (REG18) that provides regulated
supply voltage for the device CPU and internal digital logic.
8.3.8 Internal Voltage References
The BQ27Z561-R2 device provides two internal voltage references. REF1 is used by REG18, oscillators, and
CC. REF2 is used by the ADC.
8.3.9 Gas Gauging
This device uses the Impedance Track™ technology to measure and determine the available charge in battery
cells. See the Theory and Implementation of Impedance Track Battery Fuel-Gauging Algorithm Application
Report for further details.
8.3.10 Charge Control Features
This device supports charge control features, such as:
• Reports charging voltage and charging current based on the active temperature range—JEITA temperature
ranges T1, T2, T3, T4, T5, and T6
• Provides more complex charging profiles, including sub-ranges within a standard temperature range
• Reports the appropriate charging current required for constant current charging, and the appropriate charging
voltage needed for constant voltage charging to a smart charger, using the bus communication interface
• Compensates the charging profile based on the value of RelativeStateOfCharge()
• Selects the chemical state-of-charge of each battery cell using the Impedance Track method
• Reports charging faults and indicates charge status via charge and discharge alarms
8.3.11 Authentication
This device supports security with the following features, which can be enabled if desired:
• Authentication by the host using the SHA-256 method
• The gas gauge requires SHA-256 authentication before the device can be unsealed or allow full access.
8.4 Device Functional Modes
This device supports five modes, but the current consumption varies, based on firmware control of certain
functions and modes of operation:
• NORMAL mode: In this mode, the device performs measurements, calculations, protections, and data
updates in 250-ms intervals. Between these intervals, the device is operating in a reduced power stage to
minimize total average current consumption.
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• SLEEP mode: In this mode, the device performs measurements, calculations, and data updates in adjustable
time intervals. Between these intervals, the device is operating in a reduced power stage to minimize total
average current consumption.
• DEEP SLEEP mode: In this mode, the current is reduced slightly while current and voltage are still measured
periodically, with a user-defined time between reads.
• HIBERNATE mode: In this mode, the device is completely disabled with CE remaining high. This mode is
exited upon two valid communications within a specified time window.
• OFF mode: The device is completely disabled by pulling CE low. CE disables the internal voltage rail. All
nonvolatile memory is unprotected.
8.4.1 Lifetime Logging Features
The device supports data logging of several key parameters for warranty and analysis:
• Maximum and minimum cell temperature
• Maximum current in CHARGE or DISCHARGE mode
• Maximum and minimum cell voltages
• Total run time (This data is stored with a resolution of two hours.)
• Time spent different temperature ranges (This data is stored with a resolution of two hours.)
8.4.2 Configuration
The device supports accurate data measurements and data logging of several key parameters.
8.4.2.1 Coulomb Counting
The device uses an integrating delta-sigma analog-to-digital converter (ADC) for current measurement. The ADC
measures charge and discharge flow of the battery by measuring the voltage across a very small external sense
resistor. The integrating ADC measures a bipolar signal from a range of –100 mV to 100 mV, with a positive
value when V(SRP) –V(SRN), indicating charge current and a negative value indicating discharge current.
The current measurement is performed by measuring the voltage drop across the external sense resistor, which
can be as low as 1 mΩ, and the polarity of the differential voltage determines if the cell is in the CHARGE or
DISCHARGE mode.
8.4.2.2 Cell Voltage Measurements
The BQ27Z561-R2 gas gauge measures the cell voltage at 1-s intervals using the ADC. This measured value is
internally scaled for the ADC and is calibrated to reduce any errors due to offsets. This data is also used for
calculating the impedance of the cell for Impedance Track gas gauging.
8.4.2.3 Auto Calibration
The auto-calibration feature helps to cancel any voltage offset across the SRP and SRN pins for accurate
measurement of the cell voltage, charge/discharge current, and thermistor temperature. The auto-calibration is
performed when there is no communication activity for a minimum of 5 s on the bus lines.
8.4.2.4 Temperature Measurements
This device has an internal sensor for on-die temperature measurements, and the ability to support an external
temperature measurement via the external NTC on the TS pin. These two measurements are individually
enabled and configured.
9 Applications and Implementation
备注
以下应用部分中的信息不属于TI 器件规格的范围，TI 不担保其准确性和完整性。TI 的客 户应负责确定
器件是否适用于其应用。客户应验证并测试其设计，以确保系统功能。
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9.1 Application Information
The BQ27Z561-R2 gas gauge can be used with a 1-series Li-ion/Li-polymer battery pack. To implement and
design a comprehensive set of parameters for a specific battery pack, the user needs Battery Management
Studio (BQSTUDIO), which is a graphical user-interface tool installed on a PC during development. The firmware
installed in the product has default values, which are summarized in the BQ27Z561-R2 Technical Reference
Manual. Using the BQSTUDIO tool, these default values can be changed to cater to specific application
requirements during development once the system parameters, such as enable and disable of certain features
for operation, cell configuration, chemistry that best matches the cell used, and more are known. The final flash
image, which is extracted once configuration and testing are complete, is used for mass production and is
referred to as the "golden image."
9.2 Typical Applications
The following is an example BQ27Z561-R2 application schematic for a single-cell battery pack.
PACK+
Protector
IC
CE
Tie to CPU for
direct control
SDA/HDQ
SCL
BAT_SNS
BAT
INT
+
-
1 µF
PULS
Ba ery
NU
TS
Thermistor
10 k
VSS
SRN
SRP
0.1 ꢀF
RSRN
RSRP
PACK-
RSENSE
1 m
图9-1. BQ27Z561-R1 Typical Implementation with Low-side Current Sensing
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RSENSE
1 m
PACK+
RSRP
RSRN
Protector
IC
0.1 µF
SRP
SRN
CE
Tie to CPU for
direct control
SDA/HDQ
SCL
BAT_SNS
BAT
INT
+
-
1 µF
PULS
Ba ery
NU
TS
Thermistor
10 k
VSS
PACK-
图9-2. BQ27Z561-R1 Typical Implementation with High-side Current Sensing
9.2.1 Design Requirements (Default)
DESIGN PARAMETER
EXAMPLE
1s1p (1 series with 1 parallel)
5300 mAh
Cell Configuration
Design Capacity
Device Chemistry
Design Voltage
li-ion
4000 mV
Cell Low Voltage
2500 mV
9.2.2 Detailed Design Procedure
9.2.2.1 Changing Design Parameters
For the firmware settings needed for the design requirements, refer to the BQ27Z561-R2 Technical Reference
Manual.
• To change design capacity, set the data flash value (in mAh) in the Gas Gauging: Design: Design Capacity
register.
• To set device chemistry, go to the data flash I2C Configuration: Data: Device Chemistry. The BQSTUDIO
software automatically populates the correct chemistry identification. This selection is derived from using the
BQCHEM feature in the tools and choosing the option that matches the device chemistry from the list.
• To set the design voltage, go to Gas Gauging: Design: Design Voltage register.
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• To set the Cell Low Voltage or clear the Cell Low Voltage, use Settings: Configuration: Init Voltage Low
Set or Clear. This is used to set the cell voltage level that will set (clear) the [VOLT_LO] bit in the Interrupt
Status register.
• To enable the internal temperature and the external temperature sensors: Set Settings:Configuration:
Temperature Enable: Bit 0 (TSInt) = 1 for the internal sensor; set Bit 1 (TS1) = 1 for the external sensor.
9.2.3 Calibration Process
The calibration of current, voltage, and temperature readings is accessible by writing 0xF081 or 0xF082 to
ManufacturerAccess(). A detailed procedure is included in the BQ27Z561-R2 Technical Reference Manual in the
Calibration section. The description allows for calibration of cell voltage measurement offset, battery voltage,
current calibration, coulomb counter offset, PCB offset, CC gain and capacity gain, and temperature
measurement for both internal and external sensors.
9.2.4 Gauging Data Updates
When a battery pack enabled with the BQ27Z561-R2 gas gauge is cycled, the value of FullChargeCapacity()
updates several times, including the onset of charge or discharge, charge termination, temperature delta,
resistance updates during discharge, and relaxation. 图 9-3 shows actual battery voltage, load current, and
FullChargeCapacity() when some of those updates occur during a single application cycle.
Update points from the plot include:
• Charge termination at 7900 s
• Relaxation at 9900 s
• Resistance update at 11500 s
9.2.4.1 Application Curve
图9-3. Full Charge Capacity Tracking (X-Axis Is Seconds)
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9.3 Power Supply Recommendations
The only power supply is the BAT pin, which is connected to the positive terminal of the battery. The input
voltage for the BAT pin will have a minimum of 2 V to a maximum of 5 V.
9.4 Layout
9.4.1 Layout Guidelines
• The quality of the Kelvin connections at the sense resistor is critical. The sense resistor must have a
temperature coefficient no greater than 50 ppm to minimize current measurement drift with temperature.
Choose the value of the sense resistor to correspond to the available overcurrent and short-circuit ranges of
the BQ27Z561-R2 gas gauge. Select the smallest value possible to minimize the negative voltage generated
on the BQ27Z561-R2 VSS node during a short circuit. This pin has an absolute minimum of –0.3 V. Parallel
resistors can be used as long as good Kelvin sensing is ensured. The device is designed to support a 1-mΩ
to 3-mΩsense resistor.
• BAT_SNS should be tied directly to the positive connection of the battery. It should not share a path with the
BAT pin.
• In reference to the gas gauge circuit the following features require attention for component placement and
layout: differential low-pass filter and I2C communication.
• The BQ27Z561-R2 gas gauge uses an integrating delta-sigma ADC for current measurements. Add a 100-Ω
resistor from the sense resistor to the SRP and SRN inputs of the device. Place a 0.1-μF filter capacitor
across the SRP and SRN inputs. If required for a circuit, 0.1-µF filter capacitors can be added for additional
noise filtering for each sense input pin to ground. Place all filter components as close as possible to the
device. Route the traces from the sense resistor in parallel to the filter circuit. Adding a ground plane around
the filter network can provide additional noise immunity.
• The BQ27Z561-R2 has an internal LDO that is internally compensated and does not require an external
decoupling capacitor.
• The I2C clock and data pins have integrated high-voltage ESD protection circuits; however, adding a Zener
diode and series resistor provides more robust ESD performance. The I2C clock and data lines have an
internal pulldown. When the gas gauge senses that both lines are low (such as during removal of the pack),
the device performs auto-offset calibration and then goes into SLEEP mode to conserve power.
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9.4.2 Layout Example
No contact to NU
(BAT_SNS trace on
bottom layer)
Tab -
Tab +
PACK +
PACK -
SDA/
HDQ
INT
PULS
VSS
TS
SCL
RSRN
BAT_
SNS
SRN
SRP
NU
CE
RSENSE
BAT
RSRP
Weld
Tab
Weld
Tab
BAT -
BAT +
Battery
BAT_SNS at
Battery terminal
图9-4. BQ27Z561-R2 Key Trace Board Layout
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10 Device and Documentation Support
10.1 Device Support
10.1.1 第三方产品免责声明
TI 发布的与第三方产品或服务有关的信息，不能构成与此类产品或服务或保修的适用性有关的认可，不能构成此
类产品或服务单独或与任何TI 产品或服务一起的表示或认可。
10.2 Documentation Support
10.2.1 Related Documentation
• BQ27Z561-R2 Technical Reference Manual
• Theory and Implementation of Impedance Track Battery Fuel-Gauging Algorithm Application Report
10.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
10.4 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅
TI 的《使用条款》。
10.5 Trademarks
Impedance Track™ and TI E2E™ are trademarks of Texas Instruments.
所有商标均为其各自所有者的财产。
10.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
10.7 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
11 Mechanical, Packaging, and Orderable Information
The following page includes mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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16-Nov-2022
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
BQ27Z561YPHR-R2
ACTIVE
DSBGA
YPH
12
3000 RoHS & Green
SAC396
Level-1-260C-UNLIM
-40 to 85
Q27Z561R2
Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
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provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
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Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Nov-2022
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
BQ27Z561YPHR-R2
DSBGA
YPH
12
3000
180.0
8.4
1.83
2.2
0.53
4.0
8.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Nov-2022
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
DSBGA YPH 12
SPQ
Length (mm) Width (mm) Height (mm)
182.0 182.0 20.0
BQ27Z561YPHR-R2
3000
Pack Materials-Page 2
PACKAGE OUTLINE
YPH0012
DSBGA - 0.4 mm max height
SCALE 7.000
DIE SIZE BALL GRID ARRAY
A
D
B
E
BALL A1
INDEX AREA
0.4 MAX
C
SEATING PLANE
0.05 C
0.175
0.125
BALL TYP
1 TYP
0.5 TYP
D
C
B
SYMM
1.5
TYP
0.5
TYP
A
3
1
2
0.25
0.15
12X
C A
SYMM
0.015
B
4222640/A 12/2015
NanoFree Is a trademark of Texas Instruments.
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. NanoFreeTM package configuration.
www.ti.com
EXAMPLE BOARD LAYOUT
YPH0012
DSBGA - 0.4 mm max height
DIE SIZE BALL GRID ARRAY
(0.5) TYP
12X ( 0.23)
3
1
2
A
(0.5) TYP
B
C
SYMM
D
SYMM
LAND PATTERN EXAMPLE
SCALE:30X
0.05 MAX
0.05 MIN
(
0.23)
METAL UNDER
SOLDER MASK
METAL
(
0.23)
SOLDER MASK
OPENING
SOLDER MASK
OPENING
NON-SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
NOT TO SCALE
4222640/A 12/2015
NOTES: (continued)
4. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).
www.ti.com
EXAMPLE STENCIL DESIGN
YPH0012
DSBGA - 0.4 mm max height
DIE SIZE BALL GRID ARRAY
(0.5) TYP
(R0.05) TYP
12X ( 0.225)
1
2
3
A
(0.5) TYP
B
SYMM
METAL
TYP
C
D
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:40X
4222640/A 12/2015
NOTES: (continued)
5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
www.ti.com
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