BQ34Z100-G1_技术文档

BQ34Z100-G1

ZHCSD95D –JANUARY 2015 –REVISED APRIL 2021

BQ34Z100-G1 采用Impedance Track™ 技术的宽量程电量监测计

1 特性

2 应用

• 支持锂离子、磷酸铁锂、PbA、镍氢和镍镉化学物

质

• 轻型电动车辆

• 医疗仪器

• 移动无线电

• 电动工具

• 不间断电源(UPS)

• 对电压为3V 至65V 的电池使用已获得专利的

Impedance Track^™技术估算容量

– 老化补偿

– 自放电补偿

• 支持的电池容量高达29Ah，并且提供标准配置选项

• 支持的充电和放电电流高达32A，并且提供标准配

置选项

• 外部负温度系数(NTC) 热敏电阻支持

• 支持与主机系统的两线制I²C 和HDQ 单线制通信

接口

3 说明

BQ34Z100-G1 器件是适用于锂离子、铅酸、镍氢和镍

镉电池的Impedance Track^™电量监测计，并且独立于

电池串联配置工作。通过外部电压转换电路可轻松支持

3V 至 65V 的电池，此电路可通过自动控制来降低系统

功耗。

• SHA-1/HMAC 认证

BQ34Z100-G1 器件提供多个接口选项，其中包括一个

I²C 从接口、一个 HDQ 从接口、一个或四个直接 LED

接口以及一个警报输出引脚。此外，BQ34Z100-G1 还

支持外部端口扩展器，连接四个以上的LED。

• 一个或者四个LED 直接显示控制

• 五个LED 和通过端口扩展器的更多显示

• 节能模式（典型电池组运行范围条件）

– 正常工作：< 145µA 平均电流

– 睡眠：< 84µA 平均电流

– 全睡眠：< 30µA 平均电流

• 封装：14 引脚TSSOP

器件信息

器件型号⁽¹⁾

封装尺寸（标称值）

封装

BQ34Z100-G1

TSSOP (14)

5.00mm × 4.40mm

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附

录。

简化版原理图

本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问

www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。

English Data Sheet: SLUSBZ5

BQ34Z100-G1

ZHCSD95D –JANUARY 2015 –REVISED APRIL 2021

www.ti.com.cn

Table of Contents

6.13 Timing Requirements: HDQ Communication............7

6.14 Timing Requirements: I²C-Compatible Interface...... 8

6.15 Typical Characteristics..............................................9

7 Detailed Description......................................................10

7.1 Overview...................................................................10

7.2 Functional Block Diagram......................................... 11

7.3 Feature Description...................................................11

7.4 Device Functional Modes..........................................44

8 Application and Implementation..................................45

8.1 Application Information............................................. 45

8.2 Typical Applications.................................................. 45

9 Power Supply Recommendations................................53

10 Layout...........................................................................54

10.1 Layout Guidelines................................................... 54

10.2 Layout Example...................................................... 54

11 Device and Documentation Support..........................57

11.1 Documentation Support.......................................... 57

11.2 接收文档更新通知................................................... 57

11.3 支持资源..................................................................57

11.4 Trademarks............................................................. 57

11.5 Electrostatic Discharge Caution..............................57

11.6 Glossary..................................................................57

12 Mechanical, Packaging, and Orderable

1 特性................................................................................... 1

2 应用................................................................................... 1

3 说明................................................................................... 1

4 Revision History.............................................................. 2

5 Pin Configuration and Functions...................................3

6 Specifications.................................................................. 4

6.1 Absolute Maximum Ratings........................................ 4

6.2 ESD Ratings............................................................... 4

6.3 Recommended Operating Conditions.........................4

6.4 Thermal Information....................................................5

6.5 Electrical Characteristics: Power-On Reset................5

6.6 Electrical Characteristics: LDO Regulator...................5

6.7 Electrical Characteristics: Internal Temperature

Sensor Characteristics.................................................. 5

6.8 Electrical Characteristics: Low-Frequency

Oscillator....................................................................... 6

6.9 Electrical Characteristics: High-Frequency

Oscillator....................................................................... 6

6.10 Electrical Characteristics: Integrating ADC

(Coulomb Counter) Characteristics...............................6

6.11 Electrical Characteristics: ADC (Temperature

and Cell Measurement) Characteristics........................ 6

6.12 Electrical Characteristics: Data Flash Memory

Characteristics...............................................................7

Information.................................................................... 57

4 Revision History

Updated the numbering format for tables, figures, and cross-references throughout the document.

Changes from Revision C (February 2019) to Revision D (April 2021)

Page

• Changed Ground System ................................................................................................................................ 54

• Changed Differential Connection Between SRP and SRN Pins with Sense Resistor .....................................55

Changes from Revision B (July 2016) to Revision C (February 2019)

Page

• Deleted EV2300 references..............................................................................................................................42

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5 Pin Configuration and Functions

P2

VEN

1

2

3

4

5

6

7

14

13

12

11

10

9

P3/SDA

P4/SCL

P5/HDQ

P6/TS

SRN

P1

BAT

CE

REGIN

REG25

SRP

8

VSS

Not to scale

表5-1. Pin Functions

I/O

DESCRIPTION

NAME

NUMBER

P2

1

O

LED 2 or Not Used (connect to Vss)

Active High Voltage Translation Enable. This signal is optionally used to switch the input voltage

divider on/off to reduce the power consumption (typ 45 µA) of the divider network. If not used,

then this pin can be left floating or tied to Vss.

VEN

P1

2

3

O

LED 1 or Not Used (connect to Vss). This pin is also used to drive an LED for single-LED mode.

Use a small signal N-FET (Q1) in series with the LED as shown on 图8-4.

BAT

4

5

6

7

8

I

Translated Battery Voltage Input

CE

I

Chip Enable. Internal LDO is disconnected from REGIN when driven low.

Internal integrated LDO input. Decouple with a 0.1-µF ceramic capacitor to Vss.

2.5-V Output voltage of the internal integrated LDO. Decouple with 1-µF ceramic capacitor to Vss.

Device ground

REGIN

REG25

VSS

P

Analog input pin connected to the internal coulomb-counter peripheral for integrating a small

voltage between SRP and SRN where SRP is nearest the BAT–connection.

SRP

9

I

Analog input pin connected to the internal coulomb-counter peripheral for integrating a small

voltage between SRP and SRN where SRN is nearest the PACK–connection.

SRN

10

11

12

I

P6/TS

P5/HDQ

Pack thermistor voltage sense (use 103AT-type thermistor)

Open drain HDQ Serial communication line (slave). If not used, then this pin can be left floating or

tied to Vss.

I/O

Slave I²C serial communication clock input. Use with a 10-KΩpull-up resistor (typical). This pin is

P4/SCL

P3/SDA

13

14

I

also used for LED 4 in the four-LED mode. If not used, then this pin can be left floating or tied to

Vss.

Open drain slave I²C serial communication data line. Use with a 10-kΩpull-up resistor (typical).

This pin is also used for LED 3 in the four-LED mode. If not used, then this pin can be left floating

or tied to Vss.

I/O

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6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)⁽¹⁾

MIN

MAX

5.5

UNIT

V_REGIN

V_CC

Regulator Input Range

V

–0.3

Supply Voltage Range

2.75

5.5

V_IOD

V_BAT

V_I

Open-drain I/O pins (SDA, SCL, HDQ, VEN)

Bat Input pin

5.5

Input Voltage range to all other pins (P1, P2, SRP, SRN)

Human-body model (HBM), BAT pin

Human-body model (HBM), all other pins

Operating free-air temperature range

Functional temperature range

VCC + 0.3

V

1.5

2

kV

°C

ESD

T_A

T_F

85

–40

–65

–40

100

150

100

Storage temperature range

T_STG

Lead temperature (soldering, 10 s)

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE

±2000

±500

UNIT

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾

Electrostatic

discharge

V_(ESD)

V

Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

T_A=–40°C to 85°C; Typical Values at T_A= 25°C C_LDO25= 1.0 µF, and V_REGIN= 3.6 V (unless otherwise noted)

MIN

NOM

MAX UNIT

No operating restrictions

No FLASH writes

2.7

4.5

2.7

V

V_REGIN

Supply Voltage

2.45

External input capacitor for

internal LDO between REGIN

and VSS

C_REGIN

0.1

1

μF

Nominal capacitor values specified.

Recommend a 10% ceramic X5R type

capacitor located close to the device.

External output capacitor for

internal LDO between VCC and

VSS

C_LDO25

0.47

NORMAL operating-mode

current

Gas Gauge in NORMAL mode,

I_LOAD> Sleep Current

I_CC

145

μA

Gas Gauge in SLEEP mode,

I_LOAD< Sleep Current

I_SLP

I_SLP+

SLEEP operating-mode current

84

30

FULLSLEEP operating-mode

current

Gas Gauge in FULL SLEEP mode,

I_LOAD< Sleep Current

Output voltage, low (SCL, SDA,

HDQ, VEN)

V_OL

I_OL= 3 mA

0.4

0.6

V

V_OH(PP)

V_OH(OD)

V_IL

Output voltage, high

I_OH= –1 mA

V

_CC–0.5

–0.3

Output voltage, high (SDA, SCL,

HDQ, VEN)

External pull-up resistor connected to V_CC

Input voltage, low

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6.3 Recommended Operating Conditions (continued)

T_A=–40°C to 85°C; Typical Values at T_A= 25°C C_LDO25= 1.0 µF, and V_REGIN= 3.6 V (unless otherwise noted)

MIN

NOM

MAX UNIT

Input voltage, high (SDA, SCL,

HDQ)

V_IH(OD)

1.2

6

V

V_A1

Input voltage range (TS)

1

5

V

VSS –0.05

VSS –0.125

V_A2

Input voltage range (BAT)

V_A3

Input voltage range (SRP, SRN)

Input leakage current (I/O pins)

Power-up communication delay

0.125

0.3

I_LKG

t_PUCD

μA

250

ms

6.4 Thermal Information

BQ34Z100-G1

TSSOP (PW)

14 PINS

103.8

THERMAL METRIC⁽¹⁾

UNIT

R_{θJA, High K}

R_θJC(top)

R_θJB

Junction-to-ambient thermal resistance

Junction-to-case(top) thermal resistance

Junction-to-board thermal resistance

31.9

46.6

°C/W

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case(bottom) thermal resistance

2.0

ψ_JT

45.9

ψ_JB

R_θJC(bottom)

N/A

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics Application

Report, SPRA953.

6.5 Electrical Characteristics: Power-On Reset

T_A= –40°C to 85°C; Typical Values at TA = 25°C and V_REGIN= 3.6 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

2.05

45

TYP

2.20

115

MAX UNIT

Positive-going battery voltage

input at REG25

V_IT+

2.31

185

V

V_HYS

Power-on reset hysteresis

mV

6.6 Electrical Characteristics: LDO Regulator

T_A= 25°C, C_LDO25= 1.0 µF, V_REGIN= 3.6 V (unless otherwise noted)⁽¹⁾

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

2.7 V ≤V_REGIN≤4.5 V,

2.3

2.5

2.7

V

T_A= –40°C to 85°C

I_OUT≤16 mA

Regulator output

voltage

V_REG25

2.45 V ≤V_REGIN< 2.7 V

(low battery), I_OUT≤3 mA

2.3

Short Circuit

Current Limit

(2)

I_SHORT

V_REG25= 0 V

250

mA

(1) LDO output current, I_OUT, is the sum of internal and external load currents.

(2) Specified by design. Not production tested.

6.7 Electrical Characteristics: Internal Temperature Sensor Characteristics

T_A= –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at T_A= 25°C and REG25 = 2.5 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

G_TEMP

Temperature sensor voltage gain

mV/°C

–2

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6.8 Electrical Characteristics: Low-Frequency Oscillator

T_A= –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at T_A= 25°C and REG25 = 2.5 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

32.768

0.25%

500

MAX UNIT

f_(LOSC)

Operating frequency

Frequency error^{(1) (2)}

Start-up time⁽³⁾

kHz

TA = 0°C to 60°C

1.5%

–1.5%

–2.5%

–4%

f_(LEIO)

2.5%

TA = –20°C to 70°C

TA = –40°C to 85°C

4%

t_(LSXO)

μs

(1) The frequency drift is included and measured from the trimmed frequency at VCC = 2.5 V, T_A= 25°C.

(2) The frequency error is measured from 32.768 kHz.

(3) The startup time is defined as the time it takes for the oscillator output frequency to be ±3%.

6.9 Electrical Characteristics: High-Frequency Oscillator

T_A= –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at T_A= 25°C and REG25 = 2.5 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

8.389

0.38%

2.5

MAX UNIT

f_(OSC)

Operating frequency

Frequency error^{(1) (2)}

Start-up time⁽²⁾

MHz

T_A= 0°C to 60°C

2%

3%

–2%

–3%

f_(EIO)

T_A= –20°C to 70°C

T_A= –40°C to 85°C

4.5%

5

–4.5%

t_(SXO)

ms

(1) The frequency error is measured from 2.097 MHz.

(2) The startup time is defined as the time it takes for the oscillator output frequency to be ±3%.

6.10 Electrical Characteristics: Integrating ADC (Coulomb Counter) Characteristics

T_A= –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at T_A= 25°C and REG25 = 2.5 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

V_(SR)= V_(SRN)–V_(SRP)

Single conversion

MIN

TYP

MAX UNIT

V_(SR)

Input voltage range, V_(SRN)and V_(SRP)

Conversion time

0.125

15

V

s

–0.125

1

t_{SR_CONV}

Resolution

14

bits

V_OS(SR)

I_NL

Z_IN(SR)

I_lkg(SR)

Input offset

10

µV

Integral nonlinearity error

Effective input resistance⁽¹⁾

Input leakage current⁽¹⁾

±0.007% ±0.034% FSR⁽²⁾

2.5

MΩ

0.3

µA

(1) Specified by design. Not tested in production.

(2) Full-scale reference

6.11 Electrical Characteristics: ADC (Temperature and Cell Measurement) Characteristics

T_A= –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at T_A= 25°C and REG25 = 2.5 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

V_IN(ADC)

Input voltage range

Conversion time

Resolution

0.05

1

125

15

V

ms

t_{ADC_CONV}

14

bits

mV

MΩ

V_OS(ADC)

Z_ADC1

Input offset

1

Effective input resistance (TS)⁽¹⁾

8

BQ34Z100-G1 not measuring cell

voltage

MΩ

KΩ

Z_ADC2

Effective input resistance (BAT)⁽¹⁾

BQ34Z100-G1 measuring cell

voltage

100

6

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6.11 Electrical Characteristics: ADC (Temperature and Cell Measurement) Characteristics

(continued)

T_A= –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at T_A= 25°C and REG25 = 2.5 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

I_lkg(ADC)

Input leakage current⁽¹⁾

0.3 µA

(1) Specified by design. Not tested in production.

6.12 Electrical Characteristics: Data Flash Memory Characteristics

T_A= –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at T_A= 25°C and REG25 = 2.5 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

Data retention⁽¹⁾

10

Years

t_DR

Flash-programming write cycles⁽¹⁾

Word programming time⁽¹⁾

Flash-write supply current⁽¹⁾

20,000

Cycles

ms

t_WORDPROG

I_CCPROG

2

5

10

mA

(1) Specified by design. Not tested in production.

6.13 Timing Requirements: HDQ Communication

T_A= –40°C to 85°C, 2.45 V < V_REGIN= V_BAT< 5.5 V; typical values at T_A= 25°C and V_REGIN= V_BAT= 3.6 V (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

190

0.5

32

NOM

MAX UNIT

t_(CYCH)

t_(CYCD)

t_(HW1)

t_(DW1)

t_(HW0)

t_(DW0)

t_(RSPS)

t_(B)

Cycle time, host to BQ34Z100-G1

Cycle time, BQ34Z100-G1 to host

Host sends 1 to BQ34Z100-G1

BQ34Z100-G1 sends 1 to host

Host sends 0 to BQ34Z100-G1

BQ34Z100-G1 sends 0 to host

Response time, BQ34Z100-G1 to host

Break time

μs

205

250

50

μs

ns

50

86

145

950

80

190

40

t_(BR)

Break recovery time

t_(RISE)

t_(RST)

HDQ line rising time to logic 1 (1.2 V)

HDQ Reset

950

2.2

1.8

s

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1.2V

t_(BR)

t_(RISE)

t_(B)

(b) HDQ line rise time

(a) Break and Break Recovery

t_(DW1)

t_(HW1)

t_(DW0)

t_(CYCD)

t_(HW0)

t_(CYCH)

(d) Gauge Transmitted Bit

(c) Host Transmitted Bit

1-bit

R/W

8-bit data

7-bit address

Break

t_(RSPS)

(e) Gauge to Host Response

图6-1. Timing Diagrams

6.14 Timing Requirements: I²C-Compatible Interface

T_A= –40°C to 85°C, 2.45 V < V_REGIN= V_BAT< 5.5 V; typical values at T_A= 25°C and V_REGIN= V_BAT= 3.6 V (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

MIN NOM

MAX UNIT

t_r

SCL/SDA rise time

300

ns

t_f

SCL/SDA fall time

t_w(H)

SCL pulse width (high)

SCL pulse width (low)

Setup for repeated start

Start to first falling edge of SCL

Data setup time

600

1.3

600

100

0

ns

t_w(L)

μs

ns

t_su(STA)

t_d(STA)

t_su(DAT)

t_h(DAT)

t_su(STOP)

t_BUF

ns

Data hold time

ns

Setup time for stop

600

66

ns

Bus free time between stop and start

Clock frequency

μs

kHz

f_SCL

400

t

f

t

r

(BUF)

SU(STA)

w(H)

w(L)

SCL

SDA

t

f

d(STA)

su(STOP)

t

r

t

su(DAT)

h(DAT)

REPEATED

START

STOP

START

图6-2. I²C-Compatible Interface Timing Diagrams

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6.15 Typical Characteristics

200

160

120

80

15

10

5

40

0

-5

-40

-80

-120

-160

-200

-10

-15

-40°C

-20°C

25°C

65°C

85°C

-40èC

-20èC

25èC

65èC

85èC

-20

25.2

27

28.8 30.6 32.4 34.2

Battery Voltage (V)

36

37.8 39.6

2800 3000 3200 3400 3600 3800 4000 4200 4400

Battery Voltage (mV)

D002

D001

图6-4. V_(Err)Across VIN (0 mA) 9 s

图6-3. V_(Err)Across VIN (0 mA)

25

2

1

0

20

15

10

5

-1

-2

-3

-4

-5

-6

-7

-8

-9

0

-5

-10

-15

-20

-25

-40èC

-20èC

25èC

65èC

85èC

-3000

-2000

-1000

0

Current (mA)

1000

2000

3000

-40

-20

0

20

40

60

80

100

Temperature (èC)

D003

D004

图6-5. I_(Err)

图6-6. T_(Err)

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7 Detailed Description

7.1 Overview

The BQ34Z100-G1 device accurately predicts the battery capacity and other operational characteristics of a

single cell or multiple rechargeable cell blocks, which are voltage balanced when resting. The device supports

various Li-ion , Lead Acid (PbA), Nickel Metal Hydride (NiMH), and Nickel Cadmium (NiCd) chemistries, and can

be interrogated by a host processor to provide cell information, such as remaining capacity, full charge capacity,

and average current.

Information is accessed through a series of commands called Standard Data Commands (see 节 7.3.1.1).

Further capabilities are provided by the additional Extended Data Commands set (see 节 7.3.2). Both sets of

commands, indicated by the general format Command(), are used to read and write information contained within

the BQ34Z100-G1 device’s control and status registers, as well as its data flash locations. Commands are sent

from host to gauge using the BQ34Z100-G1 serial communications engines, HDQ and I²C, and can be executed

during application development, pack manufacture, or end-equipment operation.

Cell information is stored in the BQ34Z100-G1 in non-volatile flash memory. Many of these data flash locations

are accessible during application development and pack manufacture. They cannot, generally, be accessed

directly during end-equipment operation. Access to these locations is achieved by using the BQ34Z100-G1

device’s companion evaluation software, through individual commands, or through a sequence of data-flash-

access commands. To access a desired data flash location, the correct data flash subclass and offset must be

known.

The BQ34Z100-G1 provides 32 bytes of user-programmable data flash memory. This data space is accessed

through a data flash interface. For specifics on accessing the data flash, refer to 节7.3.3.

The key to the BQ34Z100-G1 device’s high-accuracy gas gauging prediction is Texas Instrument’s

proprietary Impedance Track algorithm. This algorithm uses voltage measurements, characteristics, and

properties to create state-of-charge predictions that can achieve accuracy with as little as 1% error across a wide

variety of operating conditions.

The BQ34Z100-G1 measures charge/discharge activity by monitoring the voltage across a small-value series

sense resistor connected in the low side of the battery circuit. When an application’s load is applied, cell

impedance is measured by comparing its Open Circuit Voltage (OCV) with its measured voltage under loading

conditions.

The BQ34Z100-G1 can use an NTC thermistor (default is Semitec 103AT or Mitsubishi BN35-3H103FB-50) for

temperature measurement, or can also be configured to use its internal temperature sensor. The BQ34Z100-G1

uses temperature to monitor the battery-pack environment, which is used for fuel gauging and cell protection

functionality.

To minimize power consumption, the BQ34Z100-G1 has three power modes: NORMAL, SLEEP, and FULL

SLEEP. The BQ34Z100-G1 passes automatically between these modes, depending upon the occurrence of

specific events.

Multiple modes are available for configuring from one to 16 LEDs as an indicator of remaining state of charge.

More than four LEDs require the use of one or two inexpensive SN74HC164 shift register expanders.

A SHA-1/HMAC-based battery pack authentication feature is also implemented on the BQ34Z100-G1. When the

IC is in UNSEALED mode, authentication keys can be (re)assigned. A scratch pad area is used to receive

challenge information from a host and to export SHA-1/HMAC encrypted responses. See 节 7.3.15.1 for further

details.

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Note

Formatting conventions in this document:

Commands: italics with parentheses and no breaking spaces; for example, RemainingCapacity().

Data Flash: italics, bold, and breaking spaces; for example, Design Capacity.

Register Bits and Flags: brackets only; for example, [TDA] Data

Flash Bits: italic and bold; for example, [LED1]

Modes and states: ALL CAPITALS; for example, UNSEALED mode.

7.2 Functional Block Diagram

7.3 Feature Description

7.3.1 Data Commands

7.3.1.1 Standard Data Commands

The BQ34Z100-G1 uses a series of 2-byte standard commands to enable host reading and writing of battery

information. Each standard command has an associated command-code pair, as indicated in 表 7-1. Because

each command consists of two bytes of data, two consecutive HDQ/I²C transmissions must be executed to

initiate the command function and to read or write the corresponding two bytes of data. Standard commands are

accessible in NORMAL operation. Also, two block commands are available to read Manufacturer Name and

Device Chemistry. Read/Write permissions depend on the active access mode.

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表7-1. Commands

UNSEALED

ACCESS

NAME

COMMAND CODE

0x00/0x01

UNIT

SEALED ACCESS

Control()

CNTL

SOC

ME

N/A

R/W

R

R/W

StateOfCharge()

MaxError()

0x02

%

R

0x03

R

RemainingCapacity()

FullChargeCapacity()

Voltage()

RM

0x04/0x05

0x06/0x07

0x08/0x09

0x0A/0x0B

0x0C/0x0D

0x0E/0x0F

0x10/0x11

0x12/0x13

mAh

mV

R

FCC

VOLT

AI

R

AverageCurrent()

Temperature()

Flags()

mA

R

TEMP

FLAGS

I

0.1 K

N/A

mA

R

Current()

R

FlagsB()

FLAGSB

N/A

R

7.3.1.2 Control(): 0x00/0x01

Issuing a Control() command requires a subsequent two-byte subcommand. These additional bytes specify the

particular control function desired. The Control() command allows the host to control specific features of the

BQ34Z100-G1 during normal operation, and additional features when the BQ34Z100-G1 is in different access

modes, as described in 表7-2.

表7-2. Control() Subcommands

CNTL FUNCTION

CONTROL_STATUS

DEVICE_TYPE

FW_VERSION

CNTL DATA

0x0000

SEALED ACCESS

DESCRIPTION

Yes

Reports the status of key features.

0x0001

0x0002

0x0003

0x0005

0x0007

Reports the device type of 0x100 (indicating BQ34Z100-G1)

Reports the firmware version on the device type

Reports the hardware version of the device type

Returns reset data

HW_VERSION

RESET_DATA

PREV_MACWRITE

Returns previous Control() command code

Reports the chemical identifier of the Impedance Track

configuration

CHEM_ID

0x0008

Yes

BOARD_OFFSET

CC_OFFSET

0x0009

0x000A

0x000B

0x000C

0x0010

0x0017

0x0020

0x0021

0x002D

0x0041

0x0080

0x0081

0x0082

Yes

No

Forces the device to measure and store the board offset

Forces the device to measure the internal CC offset

Forces the device to store the internal CC offset

Reports the data flash version on the device

Set the [FULLSLEEP] bit in the control register to 1

Calculates chemistry checksum

CC_OFFSET_SAVE

DF_VERSION

SET_FULLSLEEP

STATIC_CHEM_CHKSUM

SEALED

Places the device in SEALED access mode

Enables the Impedance Track algorithm

Toggle CALIBRATION mode enable

IT_ENABLE

No

CAL_ENABLE

RESET

No

Forces a full reset of the BQ34Z100-G1

Exit CALIBRATION mode

EXIT_CAL

No

ENTER_CAL

No

Enter CALIBRATION mode

OFFSET_CAL

No

Reports internal CC offset in CALIBRATION mode

7.3.1.2.1 CONTROL_STATUS: 0x0000

Instructs the fuel gauge to return status information to Control addresses 0x00/0x01. The status word includes

the following information.

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表7-3. CONTROL_STATUS Flags

Bit 7

RSVD

Bit 6

Bit 5

Bit 4

CALEN

SLEEP

Bit 3

CCA

LDMD

Bit 2

BCA

RUP_DIS

Bit 1

Bit 0

RSVD

QEN

High Byte

Low Byte

FAS

RSVD

SS

FULLSLEEP

CSV

VOK

Legend: RSVD = Reserved

FAS: Status bit that indicates the BQ34Z100-G1 is in FULL ACCESS SEALED state. Active when set.

SS: Status bit that indicates the BQ34Z100-G1 is in the SEALED state. Active when set.

CALEN: Status bit that indicates the BQ34Z100-G1 calibration function is active. True when set.

Default is 0.

CCA: Status bit that indicates the BQ34Z100-G1 Coulomb Counter Calibration routine is active. Active when set.

BCA: Status bit that indicates the BQ34Z100-G1 Board Calibration routine is active. Active when set.

CSV: Status bit that indicates a valid data flash checksum has been generated. Active when set.

FULLSLEEP: Status bit that indicates the BQ34Z100-G1 is in FULL SLEEP mode. True when set. The state can only be

detected by monitoring the power used by the BQ34Z100-G1 because any communication will automatically clear

it.

SLEEP: Status bit that indicates the BQ34Z100-G1 is in SLEEP mode. True when set.

LDMD: Status bit that indicates the BQ34Z100-G1 Impedance Track algorithm using constant-power mode. True when

set. Default is 0 (CONSTANT CURRENT mode).

RUP_DIS: Status bit that indicates the BQ34Z100-G1 Ra table updates are disabled. True when set.

VOK: Status bit that indicates cell voltages are OK for Qmax updates. True when set.

QEN: Status bit that indicates the BQ34Z100-G1 Qmax updates are enabled. True when set.

7.3.1.2.2 DEVICE TYPE: 0x0001

Instructs the fuel gauge to return the device type to addresses 0x00/0x01.

7.3.1.2.3 FW_VERSION: 0x0002

Instructs the fuel gauge to return the firmware version to addresses 0x00/0x01.

7.3.1.2.4 HW_VERSION: 0x0003

Instructs the fuel gauge to return the hardware version to addresses 0x00/0x01.

7.3.1.2.5 RESET_DATA: 0x0005

Instructs the fuel gauge to return the number of resets performed to addresses 0x00/0x01.

7.3.1.2.6 PREV_MACWRITE: 0x0007

Instructs the fuel gauge to return the previous command written to addresses 0x00/0x01. The value returned is

limited to less than 0x0020.

7.3.1.2.7 CHEM ID: 0x0008

Instructs the fuel gauge to return the chemical identifier for the Impedance Track configuration to addresses

0x00/0x01.

7.3.1.2.8 BOARD_OFFSET: 0x0009

Instructs the fuel gauge to calibrate board offset. During board offset calibration the [BCA] bit is set.

7.3.1.2.9 CC_OFFSET: 0x000A

Instructs the fuel gauge to calibrate the coulomb counter offset. During calibration the [CCA] bit is set.

7.3.1.2.10 CC_OFFSET_SAVE: 0x000B

Instructs the fuel gauge to save the coulomb counter offset after calibration.

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7.3.1.2.11 DF_VERSION: 0x000C

Instructs the fuel gauge to return the data flash version to addresses 0x00/0x01.

7.3.1.2.12 SET_FULLSLEEP: 0x0010

Instructs the fuel gauge to set the FULLSLEEP bit in the Control Status register to 1. This allows the gauge to

enter the FULL SLEEP power mode after the transition to SLEEP power state is detected. In FULL SLEEP

mode, less power is consumed by disabling an oscillator circuit used by the communication engines. For HDQ

communication, one host message will be dropped. For I²C communications, the first I²C message will incur a 6-

ms–8-ms clock stretch while the oscillator is started and stabilized. A communication to the device in FULL

SLEEP will force the part back to the SLEEP mode.

7.3.1.2.13 STATIC_CHEM_DF_CHKSUM: 0x0017

Instructs the fuel gauge to calculate chemistry checksum as a 16-bit unsigned integer sum of all static chemistry

data. The most significant bit (MSB) of the checksum is masked yielding a 15-bit checksum. This checksum is

compared with the value stored in the data flash Static Chem DF Checksum. If the value matches, the MSB will

be cleared to indicate a pass. If it does not match, the MSB will be set to indicate a failure.

7.3.1.2.14 SEALED: 0x0020

Instructs the fuel gauge to transition from UNSEALED state to SEALED state. The fuel gauge should always be

set to SEALED state for use in customer’s end equipment.

7.3.1.2.15 IT ENABLE: 0x0021

Forces the fuel gauge to begin the Impedance Track algorithm, sets Bit 2 of UpdateStatus and causes the

[VOK] and [QEN] flags to be set in the CONTROL STATUS register. [VOK] is cleared if the voltages are not

suitable for a Qmax update. Once set, [QEN] cannot be cleared. This command is only available when the fuel

gauge is UNSEALED and is typically enabled at the last step of production after the system test is completed.

7.3.1.2.16 CAL_ENABLE: 0x002D

Instructs the fuel gauge to enable entry and exit to CALIBRATION mode.

7.3.1.2.17 RESET: 0x0041

Instructs the fuel gauge to perform a full reset. This command is only available when the fuel gauge is

UNSEALED.

7.3.1.2.18 EXIT_CAL: 0x0080

Instructs the fuel gauge to exit CALIBRATION mode.

7.3.1.2.19 ENTER_CAL: 0x0081

Instructs the fuel gauge to enter CALIBRATION mode.

7.3.1.2.20 OFFSET_CAL: 0x0082

Instructs the fuel gauge to perform offset calibration.

7.3.1.3 StateOfCharge(): 0x02

This read-only command returns an unsigned integer value of the predicted remaining battery capacity

expressed as a percentage of FullChargeCapacity() with a range of 0 to 100%.

7.3.1.4 MaxError(): 0x03

This read-only command returns an unsigned integer value of the expected margin of error, in %, in the state-of-

charge calculation, with a range of 1% to 100%. MaxError() is incremented internally by 0.05% for every

increment of CycleCount after the last QMAX update. MaxError() is incremented in the display by 1% for each

increment of CycleCount.

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表7-4. MaxError() Updates

EVENT

MaxError() SETTING

Full reset

Set to 100%

Set to 1%

Set to 3%

Set to 5%

QMAX and Ra table update

QMAX update

Ra table update

If MaxError() exceeds the value programmed in Max Error Limit, then [CF] in ControlStatus() is set. Only when

MaxError() returns below this value will [CF] be cleared.

7.3.1.5 RemainingCapacity(): 0x04/0x05

This read-only command pair returns the compensated battery capacity remaining. Unit is 1 mAh per bit.

7.3.1.6 FullChargeCapacity(): 0x06/07

This read-only command pair returns the compensated capacity of the battery when fully charged with units of

1 mAh per bit. However, if PackConfiguration [SCALED] is set then the units have been scaled through the

calibration process. The actual scale is not set in the device and SCALED is just an indicator flag.

FullChargeCapacity() is updated at regular intervals under the control of the Impedance Track algorithm.

7.3.1.7 Voltage(): 0x08/0x09

This read-word command pair returns an unsigned integer value of the measured battery voltage in mV with a

range of 0 V to 65535 mV.

7.3.1.8 AverageCurrent(): 0x0A/0x0B

This read-only command pair returns a signed integer value that is the average current flowing through the

sense resistor. It is updated every 1 second with units of 1 mA per bit. However, if PackConfiguration

[SCALED] is set then the units have been scaled through the calibration process. The actual scale is not set in

the device and SCALED is just an indicator flag.

7.3.1.9 Temperature(): 0x0C/0x0D

This read-only command pair returns an unsigned integer value of the temperature, in units of 0.1 K, measured

by the gas gauge and has a range of 0 to 6553.5 K. The source of the measured temperature is configured by

the [TEMPS] bit in the Pack Configuration register .

表7-5. Temperature Sensor Selection

TEMPS

TEMPERATURE() SOURCE

Internal Temperature Sensor

TS Input (default)

0

1

7.3.1.10 Flags(): 0x0E/0x0F

This read-only command pair returns the contents of the Gas Gauge Status register, depicting current operation

status.

表7-6. Flags Bit Definitions

Bit 7

OTC

OCVTAKEN

Bit 6

OTD

RSVD

Bit 5

BATHI

RSVD

Bit 4

BATLOW

CF

Bit 3

CHG_INH

RSVD

Bit 2

XCHG

SOC1

Bit 1

Bit 0

High Byte

Low Byte

FC

SOCF

CHG

DSG

Legend: RSVD = Reserved

OTC: Overtemperature in Charge condition is detected. True when set

OTD: Overtemperature in Discharge condition is detected. True when set

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BATHI: Battery High bit that indicates a high battery voltage condition. Refer to the data flash Cell BH parameters for

threshold settings. True when set

BATLOW: Battery Low bit that indicates a low battery voltage condition. Refer to the data flash Cell BL parameters for threshold

settings. True when set

CHG_INH: Charge Inhibit: unable to begin charging. Refer to the data flash [Charge Inhibit Temp Low, Charge Inhibit Temp

High] parameters for threshold settings. True when set

XCHG: Charging not allowed

FC:

Full charge is detected. FC is set when charge termination is reached and FC Set% = –1 (see 节7.3.11 for details)

or StateOfCharge() is larger than FC Set% and FC Set% is not –1. True when set

CHG: (Fast) charging allowed. True when set

OCVTAKEN: Cleared on entry to RELAX mode and set to 1 when OCV measurement is performed in RELAX mode.

CF: Condition Flag indicates that the gauge needs to run through an update cycle to optimize accuracy.

SOC1: State-of-Charge Threshold 1 reached. True when set

SOCF: State-of-Charge Threshold Final reached. True when set

DSG: Discharging detected. True when set

7.3.1.11 FlagsB(): 0x12/0x13

This read-word function returns the contents of the gas-gauge status register, depicting current operation status.

表7-7. Flags B Bit Definitions

Bit 7

SOH

RSVD

Bit 6

LIFE

RSVD

Bit 5

FIRSTDOD

RSVD

Bit 4

RSVD

Bit 3

RSVD

Bit 2

DODEOC

RSVD

Bit 1

DTRC

RSVD

Bit 0

RSVD

High Byte

Low Byte

Legend: RSVD = Reserved

SOH: StateOfHealth() calculation is active.

LIFE: Indicates that LiFePO₄RELAX is enabled.

FIRSTDOD: Set when RELAX mode is entered and then cleared upon valid DOD measurement for QMAX update or RELAX exit.

DODEOC: DOD at End-of-Charge is updated.

DTRC: Indicates RemainingCapacity() has been changed due to change in temperature.

7.3.1.12 Current(): 0x10/0x11

This read-only command pair returns a signed integer value that is the current flow through the sense resistor. It

is updated every 1 s with units of 1 mA; however, if PackConfiguration [SCALED] is set, then the units have

been scaled through the calibration process. The actual scale is not set in the device and SCALED is just an

indicator flag.

7.3.2 Extended Data Commands

Extended commands offer additional functionality beyond the standard set of commands. They are used in the

same manner; however, unlike standard commands, extended commands are not limited to 2-byte words. The

number of command bytes for a given extended command ranges in size from single to multiple bytes, as

specified in 表7-8. For details on the SEALED and UNSEALED states, refer to 节7.3.3.3.

表7-8. Extended Commands

SEALED

UNSEALED

NAME

COMMAND CODE

UNIT

ACCESS^{(1) (2)}

AverageTimeToEmpty()

AverageTimeToFull()

PassedCharge()

ATTE

ATTF

PCHG

DoD0T

AE

0x18/0x19

0x1A/0x1B

0x1C/0x1D

0x1E/0x1F

0x24/0x25

Minutes

mAh

R

DoD0Time()

Minutes

10 mW/h

AvailableEnergy()

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表7-8. Extended Commands (continued)

SEALED

UNSEALED

NAME

AveragePower()

COMMAND CODE

UNIT

ACCESS^{(1) (2)}

AP

SERNUM

INTTEMP

CC

0x26/0x27

0x28/0x29

0x2A/0x2B

0x2C/0x2D

0x2E/0x2F

0x30/0x31

0x32/0x33

0x3A/0x3B

0x3C/0x3D

0x3E

10 mW

N/A

0.1 K

Counts

%

R

Serial Number

Internal_Temperature()

CycleCount()

R

StateOfHealth()

ChargeVoltage()

ChargeCurrent()

PackConfiguration()

DesignCapacity()

DataFlashClass() (2)

DataFlashBlock() (2)

Authenticate()/BlockData()

AuthenticateCheckSum()/BlockData()

BlockData()

SOH

R

CHGV

CHGI

PKCFG

DCAP

DFCLS

DFBLK

A/DF

mV

R

mA

R

N/A

mAh

N/A

mAh

s

R

N/A

R/W

R

R/W

R

0x3F

0x40…0x53

0x54

ACKS/DFD

DFD

0x55…0x5F

0x60

BlockDataCheckSum()

BlockDataControl()

GridNumber()

DFDCKS

DFDCNTL

GN

R/W

N/A

R

0x61

0x62

LearnedStatus()

DoD@EoC()

LS

0x63

R

DEOC

QS

0x64/0x65

0x66/0x67

0x68/0x69

0x6A/0x6B

0x6C/0x6D

0x6E/0x6F

0x70/0x71

0x72/0x73

0x74/0x75

0x76...0x7F

R

QStart()

R

TrueRC()

TRC

R

TrueFCC()

TFCC

ST

R

StateTime()

R

QMaxPassedQ

DOD0()

QPC

mAh

HEX#

N/A

h/16

N/A

R

DOD0

QD0

R

QmaxDOD0()

R

QmaxTime()

QT

R

Reserved

RSVD

R

(1) SEALED and UNSEALED states are entered via commands to CNTL 0x00/0x01.

(2) In SEALED mode, data flash cannot be accessed through commands 0x3E and 0x3F.

7.3.2.1 AverageTimeToEmpty(): 0x18/0x19

This read-only command pair returns an unsigned integer value of the predicted remaining battery life at the

present rate of discharge (using AverageCurrent()), in minutes. A value of 65535 indicates that the battery is not

being discharged.

7.3.2.2 AverageTimeToFull(): 0x1A/0x1B

This read-only command pair returns an unsigned integer value of predicted remaining time until the battery

reaches full charge, in minutes, based upon AverageCurrent(). The computation should account for the taper

current time extension from the linear TTF computation based on a fixed AverageCurrent() rate of charge

accumulation. A value of 65535 indicates the battery is not being charged.

7.3.2.3 PassedCharge(): 0x1C/0x1D

This read-only command pair returns a signed integer, indicating the amount of charge passed through the

sense resistor since the last IT simulation in mAh.

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7.3.2.4 DOD0Time(): 0x1E/0x1F

This read-only command pair returns the time since the last DOD0 update.

7.3.2.5 AvailableEnergy(): 0x24/0x25

This read-only command pair returns an unsigned integer value of the predicted charge or energy remaining in

the battery. The value is reported in units of mWh.

7.3.2.6 AveragePower(): 0x26/0x27

This read-word command pair returns an unsigned integer value of the average power of the current discharge.

A value of 0 indicates that the battery is not being discharged. The value is reported in units of mW.

7.3.2.7 SerialNumber(): 0x28/0x29

This read-only command pair returns the assigned pack serial number programmed in Serial Number.

7.3.2.8 InternalTemperature(): 0x2A/0x2B

This read-only command pair returns an unsigned integer value of the measured internal temperature of the

device, in units of 0.1 K, measured by the fuel gauge.

7.3.2.9 CycleCount(): 0x2C/0x2D

This read-only command pair returns an unsigned integer value of the number of cycles the battery has

experienced with a range of 0 to 65535. One cycle occurs when accumulated discharge ≥CC Threshold.

7.3.2.10 StateOfHealth(): 0x2E/0x2F

This read-only command pair returns an unsigned integer value, expressed as a percentage of the ratio of

predicted FCC (25°C, SOH current rate) over the DesignCapacity(). The FCC (25°C, SOH current rate) is the

calculated full charge capacity at 25°C and the SOH current rate that is specified in the data flash (State of

Health Load). The range of the returned SOH percentage is 0x00 to 0x64, indicating 0% to 100%,

correspondingly.

7.3.2.11 ChargeVoltage(): 0x30/0x31

This read-only command pair returns the recommended charging voltage output from the JEITA charging profile.

It is updated automatically based on the present temperature range.

7.3.2.12 ChargeCurrent(): 0x32/0x33

This read-only command pair returns the recommended charging current output from the JEITA charging profile.

It is updated automatically based on the present temperature range.

7.3.2.13 PackConfiguration(): 0x3A/0x3B

This read-only command pair allows the host to read the configuration of selected features of the device

pertaining to various features.

7.3.2.14 DesignCapacity(): 0x3C/0x3D

This read-only command pair returns theoretical or nominal capacity of a new pack. The value is stored in

Design Capacity and is expressed in mAh.

7.3.2.15 DataFlashClass(): 0x3E

UNSEALED Access: This command sets the data flash class to be accessed. The class to be accessed should

be entered in hexadecimal.

SEALED Access: This command is not available in SEALED mode.

7.3.2.16 DataFlashBlock(): 0x3F

UNSEALED Access: If BlockDataControl has been set to 0x00, this command directs which data flash block

will be accessed by the BlockData() command. Writing a 0x00 to DataFlashBlock() specifies the BlockData()

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command will transfer authentication data. Issuing a 0x01 instructs the BlockData() command to transfer

Manufacturer Data.

SEALED Access: This command directs which data flash block will be accessed by the BlockData() command.

Writing a 0x00 to DataFlashBlock() specifies that the BlockData() command will transfer authentication data.

Issuing a 0x01 instructs the BlockData() command to transfer Manufacturer Data.

7.3.2.17 AuthenticateData/BlockData(): 0x40…0x53

UNSEALED Access: This data block has a dual function: It is used for the authentication challenge and

response and is part of the 32-byte data block when accessing data flash.

SEALED Access: This data block has a dual function: It is used for authentication challenge and response, and

is part of the 32-byte data block when accessing the Manufacturer Data.

7.3.2.18 AuthenticateChecksum/BlockData(): 0x54

UNSEALED Access: This byte holds the authentication checksum when writing the authentication challenge to

the device, and is part of the 32-byte data block when accessing data flash.

SEALED Access: This byte holds the authentication checksum when writing the authentication challenge to the

device, and is part of the 32-byte data block when accessing Manufacturer Data.

7.3.2.19 BlockData(): 0x55…0x5F

UNSEALED Access: This data block is the remainder of the 32-byte data block when accessing data flash.

SEALED Access: This data block is the remainder of the 32-byte data block when accessing Manufacturer

Data.

7.3.2.20 BlockDataChecksum(): 0x60

UNSEALED Access: This byte contains the checksum on the 32 bytes of block data read or written to data flash.

SEALED Access: This byte contains the checksum for the 32 bytes of block data written to Manufacturer Data.

7.3.2.21 BlockDataControl(): 0x61

UNSEALED Access: This command is used to control data flash ACCESS mode. Writing 0x00 to this command

enables BlockData() to access general data flash. Writing a 0x01 to this command enables the SEALED mode

operation of DataFlashBlock().

7.3.2.22 GridNumber(): 0x62

This read-only command returns the active grid point. This data is only valid during DISCHARGE mode when

[R_DIS] = 0. If [R_DIS] = 1 or not discharging, this value is not updated.

7.3.2.23 LearnedStatus(): 0x63

This read-only command returns the learned status of the resistance table.

表7-9. LearnedStatus(): 0x63

Bit 7

Bit 6

Bit 5

Bit 4

Bit 3

Bit 2

Bit 1

Bit 0

RSVD

Qmax

ITEN

CF1

CF0

Legend: RSVD = Reserved

QMax (Bit 3): QMax updates in the field.

0 = QMax has not been updated in the field.

1 = QMax updated in the field.

ITEN (Bit 2): IT enable

0 = IT is disabled.

1 = IT is enabled.

QMax Status

CF1, CF0 (Bits 1–0):

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0,0 = Battery is OK.

0,1 = QMax is first updated in the learning cycle.

7.3.2.24 Dod@Eoc(): 0x64/0x65

This read-only command pair returns the depth of discharge (DOD) at the end of charge.

7.3.2.25 QStart(): 0x66/0x67

This read-only command pair returns the initial capacity calculated from IT simulation.

7.3.2.26 TrueRC(): 0x68/0x69

This read-only command pair returns the True remaining capacity from IT simulation without the effects of the

smoothing function.

7.3.2.27 TrueFCC(): 0x6A/0x6B

This read-only command pair returns the True full charge capacity from IT simulation without the effects of the

smoothing function.

7.3.2.28 StateTime(): 0x6C/0x6D

This read-only command pair returns the time past since last state change (DISCHARGE, CHARGE, REST).

7.3.2.29 QmaxPassedQ(): 0x6E/0x6F

This read-only command pair returns the passed capacity since the last Qmax DOD update.

7.3.2.30 DOD0(): 0x70/0x71

This unsigned integer indicates the depth of discharge during the most recent OCV reading.

7.3.2.31 QmaxDod0(): 0x72/0x73

This read-only command pair returns the DOD0 saved to be used for next QMax update of Cell 1. The value is

only valid when [VOK] = 1.

7.3.2.32 QmaxTime(): 0x74/0x75

This read-only command pair returns the time since the last Qmax DOD update.

7.3.3 Data Flash Interface

7.3.3.1 Accessing Data Flash

The BQ34Z100-G1 data flash is a non-volatile memory that contains BQ34Z100-G1 initialization, default, cell

status, calibration, configuration, and user information. The data flash can be accessed in several different ways,

depending on in what mode the BQ34Z100-G1 is operating and what data is being accessed.

Commonly accessed data flash memory locations, frequently read by a host, are conveniently accessed through

specific instructions described in 节 7.3.1. These commands are available when the BQ34Z100-G1 is either in

UNSEALED or SEALED modes.

Most data flash locations, however, can only be accessible in UNSEALED mode by use of the BQ34Z100-G1

evaluation software or by data flash block transfers. These locations should be optimized and/or fixed during the

development and manufacture processes. They become part of a Golden Image File and can then be written to

multiple battery packs. Once established, the values generally remain unchanged during end-equipment

operation.

To access data flash locations individually, the block containing the desired data flash location(s) must be

transferred to the command register locations where they can be read to the host or changed directly. This is

accomplished by sending the set-up command BlockDataControl() (code 0x61) with data 0x00. Up to 32 bytes of

data can be read directly from the BlockData() command locations 0x40…0x5F, externally altered, then re-

written to the BlockData() command space. Alternatively, specific locations can be read, altered, and re-written if

their corresponding offsets are used to index into the BlockData() command space. Finally, the data residing in

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the command space is transferred to data flash, once the correct checksum for the whole block is written to

BlockDataChecksum() (command number 0x60).

Occasionally, a data flash class will be larger than the 32-byte block size. In this case, the DataFlashBlock()

command is used to designate which 32-byte block in which the desired locations reside. The correct command

address is then given by 0x40 + offset modulo 32. For example, to access Terminate Voltage in the Gas

Gauging class, DataFlashClass() is issued 80 (0x50) to set the class. Because the offset is 48, it must reside in

the second 32-byte block. Hence, DataFlashBlock() is issued 0x01 to set the block offset, and the offset used to

index into the BlockData() memory area is 0x40 + 48 modulo 32 = 0x40 + 16 = 0x40 + 0x10 = 0x50; for example,

to modify [VOLTSEL] in Pack Configuration from 0 to 1 to enable the external voltage measurement option.

Note

The subclass ID and Offset values are in decimal format in the documentation and in bqStudio. The

example below shows these values converted to hexadecimal. For example, the Pack Configuration

subclass is d64 = 0x40.

1. Unseal the device using the Control() (0x00/0x01) command if the device is sealed.

a. Write the first 2 bytes of the UNSEAL key using the Control(0x0414) command.

(wr 0x00 0x14 0x04)

b. Write the second 2 bytes of the UNSEAL key using the Control(0x3672) command.

(wr 0x00 0x72 0x36)

2. Write 0x00 using BlockDataControl() command (0x61) to enable block data flash control.

(wr 0x61 0x00)

3. Write 0x40 (Pack Configuration Subclass) using the DataFlashClass() command (0x3E) to access the

Registers subclass.

(wr 0x3E 0x40)

4. Write the block offset location using DataFlashBlock() command (0x3F). To access data located at offset 0 to

31, use offset = 0x00. To access data located at offset 32 to 63, use offset = 0x01, and so on, as necessary.

For example, Pack Configuration (offset = 0) is in the first block so use (wr 0x3F 0x00).

5. To read the data of a specific offset, use address 0x40 + mod(offset, 32). For example, Pack Configuration

(offset = 0) is located at 0x40 and 0x41; however, [VOLTSEL] is in the MSB so only 0x40 needs to be read.

Read 1 byte starting at the 0x40 address.

(rd 0x40 old_Pack_Configuration_MSB)

In this example, assume [VOLTSEL] = 0 (default).

6. To read the 1-byte checksum, use the BlockDataChecksum() command (0x60).

(rd 0x60 OLD_checksum)

7. In this example, set [VOLTSEL] by setting Bit 3 of old_Pack_Configuration_MSB to create

new_Pack_Configuration_MSB.

8. The new value for new_Pack_Configuration_MSB can be written by writing to the specific offset location.

For example, to write 1-byte new_Pack_Configuration_MSB to Pack Configuration (offset=0) located at

0x40, use command (wr 0x4B new_Pack_Configuration_MSB).

9. The data is actually transferred to the data flash when the correct checksum for the whole block (0x40 to

0x5F) is written to BlockDataChecksum() (0x60).

(wr 0x60 NEW_checksum)

The checksum is (255-x) where x is the 8-bit summation of the BlockData() (0x40 to 0x5F) on a byte-by-byte

basis.

A quick way to calculate the new checksum is to make use of the old checksum:

a. temp = mod (255 –OLD_checksum –old_Pack_Configuration_MSB), 256)

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b. NEW_checksum = 255 –mod (temp + new_Pack_Configuration_MSB, 256)

10. Reset the gauge to ensure the new data flash parameter goes into effect by using Control(0x0041).

(wr 0x00 0x41 0x00)

If previously sealed, the gauge will automatically become sealed again after RESET.

11. If not previously sealed, then seal the gauge by using Control(0x0020).

(wr 0x00 0x20 0x00)

Reading and writing subclass data are block operations 32 bytes in length. Data can be written in shorter block

sizes, however. Blocks can be shorter than 32 bytes in length. Writing these blocks back to data flash will not

overwrite data that extend beyond the actual block length.

Note

None of the data written to memory is bounded by the BQ34Z100-G1: The values are not rejected by

the gas gauge. Writing an incorrect value may result in hardware failure due to firmware program

interpretation of the invalid data. The data written is persistent, so a power-on reset resolves the fault.

7.3.3.2 Manufacturer Information Block

The BQ34Z100-G1 contains 32 bytes of user-programmable data flash storage: Manufacturer Info Block. The

method for accessing these memory locations is slightly different, depending on if the device is in UNSEALED or

SEALED modes.

When in UNSEALED mode and when an “0x00” has been written to BlockDataControl(), accessing the

Manufacturer Info Block is identical to accessing general data flash locations. First, a DataFlashClass()

command is used to set the subclass, then a DataFlashBlock() command sets the offset for the first data flash

address within the subclass. The BlockData() command codes contain the referenced data flash data. When

writing the data flash, a checksum is expected to be received by BlockDataChecksum(). Only when the

checksum is received and verified is the data actually written to data flash.

As an example, the data flash location for Manufacturer Info Block is defined as having a Subclass = 58 and

an Offset = 0 through 31 (32 byte block). The specification of Class = System Data is not needed to address

Manufacturer Info Block, but is used instead for grouping purposes when viewing data flash info in the

BQ34Z100-G1 evaluation software.

When in SEALED mode or when “0x01” BlockDataControl() does not contain “0x00”, data flash is no

longer available in the manner used in UNSEALED mode. Rather than issuing subclass information, a

designated Manufacturer Information Block is selected with the DataFlashBlock() command. Issuing a 0x01,

0x02, or 0x03 with this command causes the corresponding information block (A, B, or C, respectively) to be

transferred to the command space 0x40…0x5F for editing or reading by the host. Upon successful writing of

checksum information to BlockDataChecksum(), the modified block is returned to data flash.

Note

Manufacturer Info Block A is “read only”when in SEALED mode.

7.3.3.3 Access Modes

The BQ34Z100-G1 provides three security modes that control data flash access permissions according to 表

7-10. Public Access refers to those data flash locations specified in 表 7-11 that are accessible to the user.

Private Access refers to reserved data flash locations used by the BQ34Z100-G1 system. Care should be taken

to avoid writing to Private data flash locations when performing block writes in FULL ACCESS mode by following

the procedure outlined in 节7.3.3.1.

表7-10. Data Flash Access

SECURITY MODE

DF—PUBLIC ACCESS

DF—PRIVATE ACCESS

BOOTROM

N/A

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表7-10. Data Flash Access (continued)

SECURITY MODE

DF—PUBLIC ACCESS

DF—PRIVATE ACCESS

FULL ACCESS

UNSEALED

SEALED

R/W

R

R/W

N/A

Although FULL ACCESS and UNSEALED modes appear identical, FULL ACCESS mode allows the BQ34Z100-

G1 to directly transition to BOOTROM mode and also write access keys. UNSEALED mode does not have these

abilities.

7.3.3.4 Sealing/Unsealing Data Flash Access

The BQ34Z100-G1 implements a key-access scheme to transition between SEALED, UNSEALED, and FULL

ACCESS modes. Each transition requires that a unique set of two keys be sent to the BQ34Z100-G1 via the

Control() command (these keys are unrelated to the keys used for SHA-1/HMAC authentication). The keys must

be sent consecutively, with no other data being written to the Control() register in between. Note that to avoid

conflict, the keys must be different from the codes presented in the CNTL DATA column of 表7-2 subcommands.

When in SEALED mode, the [SS] bit of Control Status() is set, but when the UNSEAL keys are correctly received

by the BQ34Z100-G1, the [SS] bit is cleared. When the full access keys are correctly received, then the Flags()

[FAS] bit is cleared.

Both sets of keys for each level are 2 bytes each in length and are stored in data flash. The UNSEAL key (stored

at Unseal Key 0 and Unseal Key 1) and the FULL ACCESS key (stored at Full Access Key 0 and Full Access

Key 1) can only be updated when in FULL ACCESS mode. The order of the bytes entered through the Control()

command is the reverse of what is read from the part. For example, if the 1st and 2nd word of the UnSeal Key

0 returns 0x1234 and 0x5678, then Control() should supply 0x3412 and 0x7856 to unseal the part.

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7.3.4 Data Flash Summary

表 7-11 summarizes the data flash locations available to the user, including the default, minimum, and maximum

values.

表7-11. Data Flash Summary

SUBCLASS

CLASS

SUBCLASS

OFFSET

TYPE

NAME

MIN

MAX

DEFAULT

UNIT

ID

Configuration

Safety

2

0

2

3

5

7

8

I2

U1

I2

OT Chg

OT Chg Time

OT Chg Recovery

OT Dsg

0

1200

60

550

2

0.1°C

s

2

1200

60

500

600

2

0.1°C

s

2

I2

2

U1

I2

OT Dsg Time

OT Dsg Recovery

2

1200

550

0.1°C

Charge Inhibit

Cfg

Configuration

32

0

2

4

I2

Chg Inhibit Temp Low

Chg Inhibit Temp High

Temp Hys

1200

100

0

0.1°C

–400

0

Charge Inhibit

Cfg

450

50

Charge Inhibit

Cfg

Configuration

Charge

34

0

2

4

I2

Suspend Low Temp

Suspend High Temp

Pb EFF Efficiency

1200

100

0.1°C

%

–400

0

–50

550

100

U1

0.0195312

5

Configuration

Charge

34

5

F4

Pb Temp Comp

0

0.078125

%

Configuration

Charge

34

9

U1

F4

Pb Drop Off Percent

Pb Reduction Rate

0

100

96

%

10

1.25

0.125

Charge

Termination

Configuration

36

0

2

I2

Taper Current

Min Taper Capacity

Cell Taper Voltage

Current Taper Window

TCA Set %

0

1000

60

100

25

mA

mAh

mV

s

Charge

Termination

Charge

Termination

4

I2

0

100

40

Charge

Termination

6

U1

I1

0

Charge

Termination

7

100

99

%

–1

0

Charge

Termination

8

I1

TCA Clear %

100

95

%

Charge

Termination

9

I1

FC Set %

100

98

%

Charge

Termination

10

11

13

15

17

19

21

23

24

I1

FC Clear %

100

%

Charge

Termination

I2

DODatEOC Delta T

NiMH Delta Temp

1000

255

100

30

0.1°C

s

Charge

Termination

I2

0

Charge

Termination

U2

I2

NiMH Delta Temp Time

NiMH Hold Off Time

NiMH Hold Off Current

NiMH Hold Off Temp

NiMH Cell Negative Delta Volt

NiMH Cell Negative Delta Time

0

1000

32000

1000

100

180

100

240

250

17

Charge

Termination

0

s

Charge

Termination

0

mA

0.1°C

mV

s

Charge

Termination

I2

0

Charge

Termination

U1

0

Charge

Termination

0

255

16

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表7-11. Data Flash Summary (continued)

SUBCLASS

ID

CLASS

SUBCLASS

OFFSET

TYPE

NAME

MIN

MAX

DEFAULT

UNIT

Charge

Termination

Configuration

36

25

I2

NiMH Cell Neg Delta Qual Volt

0

32767

4200

mV

Day +

Mo*32 +

(Yr

Configuration

Data

48

2

U2

Manufacture Date

0

65535

0

-1980)*256

Configuration

Data

48

4

H2

U2

I2

Serial Number

Cycle Count

0

ffff

65535

32767

100

1

0

hex

Counts

mAh

%

6

0

8

CC Threshold

100

900

100

1000

5400

–400

4200

4100

10

11

13

15

17

19

21

23

24

25

26

27

28

29

30

U1

I2

Max Error Limit

0

Design Capacity

Design Energy

0

32767

0

mAh

mWh

mA

mV

%

I2

0

I2

SOH Load I

–32767

U2

U1

I1

Cell Charge Voltage T1-T2

Cell Charge Voltage T2-T3

Cell Charge Voltage T3-T4

Charge Current T1-T2

Charge Current T2-T3

Charge Current T3-T4

JEITA T1

0

4600

100

0

100

50

%

0

100

30

%

127

°C

–128

0

–10

10

I1

JEITA T2

127

°C

I1

JEITA T3

127

45

°C

I1

JEITA T4

127

55

°C

U1

Design Energy Scale

255

1

Num

BQ34Z100-

G1

Configuration

Data

48

31

S12

Device Name

x

—

Configuration

Data

48

49

43

55

0

S12

S5

U2

I2

Manufacturer Name

Device Chemistry

x

0

x

Texas Inst.

—

Data

x

LION

150

175

75

100

0

Discharge

SOC1 Set Threshold

SOC1 Clear Threshold

SOCF Set Threshold

SOCF Clear Threshold

Cell BL Set Volt Threshold

Cell BL Set Volt Time

Cell BL Clear Volt Threshold

Cell BH Set Volt Threshold

Cell BH Volt Time

65535

5000

60

mAh

mV

s

2

4

6

8

10

11

13

15

16

21

U1

I2

0

5000

60

5

mV

s

I2

4300

2

U1

I2

Cell BH Clear Volt Threshold

Cycle Delta

5000

255

5

mV

0.01%

U1

5

Manufacturer

Data

Configuration

56

0

2

4

6

8

H2

Pack Lot Code

PCB Lot Code

0

ffff

0

hex

Manufacturer

Data

Manufacturer

Data

Firmware Version

Hardware Revision

Cell Revision

Manufacturer

Data

Manufacturer

Data

Manufacturer

Data

Configuration

56

59

10

0

H2

I2

DF Config Version

Lifetime Max Temp

0

ffff

0

hex

Lifetime Data

1400

300

0.1°C

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表7-11. Data Flash Summary (continued)

SUBCLASS

ID

CLASS

SUBCLASS

OFFSET

TYPE

NAME

MIN

MAX

DEFAULT

UNIT

Configuration

Lifetime Data

59

2

4

I2

Lifetime Min Temp

1400

32767

65535

200

0

0.1°C

mA

–600

–32767

0

Lifetime Max Chg Current

Lifetime Max Dsg Current

Lifetime Max Pack Voltage

Lifetime Min Pack Voltage

6

I2

0

mA

8

U2

320

350

20 mV

10

0

Lifetime Temp

Samples

Configuration

60

0

U2

LT Flash Cnt

0

65535

0

Counts

Configuration

Registers

64

0

2

3

4

5

7

H2

H1

H2

U1

Pack Configuration

Pack Configuration B

Pack Configuration C

LED_Comm Configuration

Alert Configuration

0

ffff

ff

161

ff

flags

Num

ff

30

0

ff

ffff

100

0

Number of series cell

1

Lifetime

Resolution

Configuration

66

0

1

2

3

U1

U2

LT Temp Res

LT Cur Res

0

255

10

100

1

0.1°C

mA

Lifetime

Resolution

Lifetime

Resolution

LT V Res

255

20 mV

s

Lifetime

Resolution

LT Update Time

65535

60

Configuration

LED Display

Power

67

68

0

U1

I2

LED Hold Time

Flash Update OK Cell Volt

Sleep Current

0

255

4200

100

4

2800

10

Num

mV

mA

s

Power

2

I2

Power

11

U1

FS Wait

255

0

Manufacturer

Info

System Data

58

0

1

H1

Block A 0

Block A 1

Block A 2

Block A 3

Block A 4

Block A 5

Block A 6

Block A 7

Block A 8

Block A 9

Block A 10

Block A 11

Block A 12

Block A 13

Block A 14

0

ff

0

hex

Manufacturer

Info

Manufacturer

Info

2

Manufacturer

Info

3

Manufacturer

Info

4

Manufacturer

Info

5

Manufacturer

Info

6

Manufacturer

Info

7

Manufacturer

Info

8

Manufacturer

Info

9

Manufacturer

Info

10

11

12

13

14

Manufacturer

Info

Manufacturer

Info

Manufacturer

Info

Manufacturer

Info

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表7-11. Data Flash Summary (continued)

SUBCLASS

ID

CLASS

SUBCLASS

OFFSET

TYPE

H1

NAME

MIN

0

MAX

ff

DEFAULT

UNIT

hex

Manufacturer

Info

System Data

58

15

Block A 15

Block A 16

Block A 17

Block A 18

Block A 19

Block A 20

Block A 21

Block A 22

Block A 23

Block A 24

Block A 25

Block A 26

Block A 27

Block A 28

Block A 29

Block A 30

Block A 31

0

Manufacturer

Info

16

0

ff

Manufacturer

Info

17

0

ff

Manufacturer

Info

18

0

ff

Manufacturer

Info

19

0

ff

Manufacturer

Info

20

0

ff

Manufacturer

Info

21

0

ff

Manufacturer

Info

22

0

ff

Manufacturer

Info

23

0

ff

Manufacturer

Info

24

0

ff

Manufacturer

Info

25

0

ff

Manufacturer

Info

26

0

ff

Manufacturer

Info

27

0

ff

Manufacturer

Info

28

0

ff

Manufacturer

Info

29

0

ff

Manufacturer

Info

30

0

ff

Manufacturer

Info

31

0

ff

Gas Gauging

IT Cfg

80

0

U1

I2

Load Select

Load Mode

0

255

1

0

Num

mA

1

10

14

15

17

Res Current

Max Res Factor

Min Res Factor

Ra Filter

1000

255

10

50

1

U1

U2

Num

255

1000

500

Min PassedChg NiMH-LA 1st

Qmax

Gas Gauging

IT Cfg

80

47

U1

1

100

50

%

Gas Gauging

IT Cfg

80

49

53

55

58

62

64

66

68

72

73

75

76

78

U1

I2

Maximum Qmax Change

Cell Terminate Voltage

Cell Term V Delta

ResRelax Time

0

255

3700

4200

65534

32767

9000

14000

15

100

3000

200

500

0

%

mV

1000

I2

0

mV

U2

I2

0

s

User Rate-mA

mA

–32767

I2

User Rate-Pwr

0

mW/cW

mAh

mWh/cWh

Num

mV

–32767

I2

Reserve Cap-mAh

Reserve Energy

Max Scale Back Grid

Cell Min DeltaV

0

1

0

I2

0

U1

U2

U1

I2

4

65535

255

0

Ra Max Delta

15

42

4

%

Design Resistance

Reference Grid

32767

14

mΩ

—

U1

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表7-11. Data Flash Summary (continued)

SUBCLASS

ID

CLASS

SUBCLASS

OFFSET

TYPE

NAME

MIN

MAX

DEFAULT

UNIT

Gas Gauging

IT Cfg

80

79

80

82

84

89

91

U1

U2

U1

I2

Qmax Max Delta %

Max Res Scale

0

1

100

32767

100

10

32000

1

mAh

Num

%

Min Res Scale

Fast Scale Start SOC

Charge Hys V Shift

Smooth Relax Time

10

2000

32767

40

mV

s

I2

1000

Current

Thresholds

Gas Gauging

81

0

2

4

6

8

9

I2

Dsg Current Threshold

Chg Current Threshold

Quit Current

0

2000

1000

8191

255

60

75

mA

s

Current

Thresholds

Current

Thresholds

I2

40

Current

Thresholds

U2

U1

U2

Dsg Relax Time

60

Current

Thresholds

Chg Relax Time

60

s

Current

Thresholds

Cell Max IR Correct

1000

400

mV

Gas Gauging

Ra Table

State

R_a0

R_a0x

82

88

89

0

2

I2

U2

H1

I2

H2

I2

H2

I2

Qmax Cell 0

Cycle Count

Update Status

Cell V at Chg Term

Avg I Last Run

Avg P Last Run

Cell Delta Voltage

T Rise

0

32767

65535

6

1000

0

mAh

Num

mV

0

4

0

5

0

5000

4200

–299

–1131

2

7

32767

ffff

mA

–32768

9

mWh

mV

–32768

11

13

15

0

–32768

0

20

Num

Hex

T Time Constant

R_a0 Flag

R_a0 0

1000

ff55

105

100

113

143

98

Ra Table

2

32767

ffff

Num

Hex

Ra Table

4

R_a0 1

Ra Table

6

R_a0 2

Ra Table

8

R_a0 3

Ra Table

10

12

14

16

18

20

22

24

26

28

30

0

R_a0 4

Ra Table

R_a0 5

97

Ra Table

R_a0 6

108

89

Ra Table

R_a0 7

Ra Table

R_a0 8

86

Ra Table

R_a0 9

85

Ra Table

R_a0 10

87

Ra Table

R_a0 11

90

Ra Table

R_a0 12

110

647

1500

ffff

Ra Table

R_a0 13

Ra Table

R_a0 14

Ra Table

R_a0x Flag

R_a0x 0

Ra Table

2

32767

105

100

113

143

98

Num

Ra Table

4

R_a0x 1

Ra Table

6

R_a0x 2

Ra Table

8

R_a0x 3

Ra Table

10

12

14

R_a0x 4

Ra Table

R_a0x 5

97

Ra Table

R_a0x 6

108

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CLASS

表7-11. Data Flash Summary (continued)

SUBCLASS

ID

SUBCLASS

OFFSET

TYPE

NAME

MIN

MAX

DEFAULT

UNIT

Ra Table

Calibration

Security

R_a0x

Data

89

16

18

20

22

24

26

28

30

0

I2

R_a0x 7

R_a0x 8

0

32767

89

86

Num

mΩ

Num

0.1°C

mV

89

I2

R_a0x 9

85

89

I2

R_a0x 10

87

89

I2

R_a0x 11

90

89

I2

R_a0x 12

110

647

1500

0.4768

89

I2

R_a0x 13

89

I2

R_a0x 14

104

107

112

F4

I2

CC Gain

1.00E-01 4.00E+01

Data

4

CC Delta

2.98E+04 1.19E+06 567744.56

Data

8

CC Offset

32767

127

–32768

–1200

0

Data

10

11

12

14

1

I1

Board Offset

Int Temp Offset

Ext Temp Offset

Voltage Divider

Deadband

–128

Data

I1

127

0

–128

Data

I1

127

0

–128

Data

U2

U1

H4

0

65535

255

5000

Current

Codes

5

mA

0

Sealed to Unsealed

Unsealed to Full

Authen Key3

Authen Key2

Authen Key1

Authen Key0

ffffffff

36720414

ffffffff

hex

Security

4

hex

Security

8

1234567

89abcdef

fedcba98

76543210

hex

Security

12

16

20

hex

Security

hex

Security

hex

表7-12. Data Flash (DF) to EVSW Conversion

DATA

DATA TYPE FLASH

DATA

FLASH

UNIT

SUBCLASS

ID

EVSW

DEFAULT

EVSW

UNIT

DF to EVSW

CONVERSION

CLASS

SUBCLASS OFFSET

NAME

DEFAULT

Manufacture

Date

Day+Mo*32+

(Yr-1980)*256

Data

48

80

Data

IT Cfg

13

59

63

U2

I2

0

code

1-Jan-1980

Gas

Gauging

User Rate-

mW

0

cW

0

mW

DF × 10

Gas

Gauging

Reserve

Cap-mWh

I2

cWh

mWh

Calibration

104

Data

0

4

CC Gain

CC Delta

F4

0.47095

5.595E5

Num

10.124

10.147

4.768/DF

mΩ

5677445/DF

7.3.5 Fuel Gauging

The BQ34Z100-G1 measures the cell voltage, temperature, and current to determine the battery SOC based in

the Impedance Track algorithm (refer to Theory and Implementation of Impedance Track Battery Fuel-Gauging

Algorithm Application Report [SLUA450] for more information). The BQ34Z100-G1 monitors charge and

discharge activity by sensing the voltage across a small-value resistor (5 mΩ to 20 mΩ typ.) between the SRP

and SRN pins and in-series with the cell. By integrating charge passing through the battery, the cell’s SOC is

adjusted during battery charge or discharge.

The total battery capacity is found by comparing states of charge before and after applying the load with the

amount of charge passed. When an application load is applied, the impedance of the cell is measured by

comparing the OCV obtained from a predefined function for the present SOC with the measured voltage under

load. Measurements of OCV and charge integration determine chemical state-of-charge and Chemical Capacity

(Qmax). The initial Qmax value is taken from a cell manufacturers' data sheet multiplied by the number of

parallel cells. The parallel value is also used for the value programmed in Design Capacity. The BQ34Z100-G1

acquires and updates the battery-impedance profile during normal battery usage. It uses this profile, along with

SOC and the Qmax value, to determine FullChargeCapacity() and StateOfCharge() specifically for the present

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load and temperature. FullChargeCapacity() is reported as capacity available from a fully charged battery under

the present load and temperature until Voltage() reaches the Terminate Voltage. NominalAvailableCapacity()

and FullAvailableCapacity() are the uncompensated (no or light load) versions of RemainingCapacity() and

FullChargeCapacity(), respectively.

During normal battery usage there could be instances where a small rise of SOC for a short period of time could

occur at the beginning of discharge. The [RSOC_HOLD] option in Pack Configuration C prevents SOC rises

during discharge. SOC will be held until the calculated value falls below the actual state.

The BQ34Z100-G1 has two flags accessed by the Flags() function that warn when the battery’s SOC has fallen

to critical levels. When RemainingCapacity() falls below the first capacity threshold, specified in SOC1 Set

Threshold, the [SOC1] (State of Charge Initial) flag is set. The flag is cleared once RemainingCapacity() rises

above SOC1 Clear Threshold. All units are in mAh.

When RemainingCapacity() falls below the second capacity threshold, SOCF Set Threshold, the [SOCF] (State

of Charge Final) flag is set, serving as a final discharge warning. If SOCF Set Threshold = –1, the flag is

inoperative during discharge. Similarly, when RemainingCapacity() rises above SOCF Clear Threshold and the

[SOCF] flag has already been set, the [SOCF] flag is cleared. All units are in mAh.

The BQ34Z100-G1 includes charge efficiency compensation that makes use of four Charge Efficiency factors to

correct for energy lost due to heat. This is commonly used in NiMH and Lead-Acid chemistries and is not always

linear with respect to state-of-charge.

7.3.6 Impedance Track Variables

The BQ34Z100-G1 has several data flash variables that permit the user to customize the Impedance Track

algorithm for optimized performance. These variables are dependent upon the power characteristics of the

application as well as the cell itself.

7.3.6.1 Load Mode

Load Mode is used to select either the constant current or constant power model for the Impedance Track

algorithm as used in Load Select. See the 节 7.3.6.2 section. When Load Mode is 0, the Constant Current

Model is used (default). When Load Mode is 1, the Constant Power Model is used. The [LDMD] bit of

CONTROL_STATUS reflects the status of Load Mode.

7.3.6.2 Load Select

Load Select defines the type of power or current model to be used to compute load-compensated capacity in

the Impedance Track algorithm. If Load Mode = 0 (Constant Current), then the options presented in 表 7-13 are

available.

表7-13. Current Model Used When Load Mode = 0

LOAD SELECT VALUE

CURRENT MODEL USED

Average discharge current from previous cycle: There is an internal register that records the average

discharge current through each entire discharge cycle. The previous average is stored in this register.

However, if this is the first cycle of the gauge, then the present average current is used.

0

Present average discharge current: This is the average discharge current from the beginning of this

discharge cycle until present time.

1 (default)

2

3

4

6

Average Current: based on the AverageCurrent()

Current: based on a low-pass-filtered version of AverageCurrent() (τ=14s)

Design Capacity/5: C Rate based off of Design Capacity /5 or a C/5 rate in mA.

Use the value in User_Rate-mA: This gives a completely user configurable method.

If Load Mode = 1 (Constant Power), then the following options are available:

表7-14. Constant-Power Model Used When Load Mode = 1

LOAD SELECT VALUE

POWER MODEL USED

Average discharge power from previous cycle: There is an internal register that records the average

discharge power through each entire discharge cycle. The previous average is stored in this register.

0 (default)

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表7-14. Constant-Power Model Used When Load Mode = 1 (continued)

LOAD SELECT VALUE

POWER MODEL USED

Present average discharge power: This is the average discharge power from the beginning of this discharge

cycle until present time.

1

2

3

4

6

Average Current × Voltage: based off the AverageCurrent() and Voltage().

Current × Voltage: based on a low-pass-filtered version of AverageCurrent() (τ=14s) and Voltage()

Design Energy/5: C Rate based off of Design Energy /5 or a C/5 rate in mA.

Use the value in User_Rate-mW/cW. This gives a completely user-configurable method.

7.3.6.3 Reserve Cap-mAh

Reserve Cap-mAh determines how much actual remaining capacity exists after reaching

0

RemainingCapacity() before Terminate Voltage is reached. A loaded rate or no-load rate of compensation can

be selected for Reserve Cap by setting the [RESCAP] bit in the Pack Configuration register.

7.3.6.4 Reserve Cap-mWh/cWh

Reserve Cap-mWh determines how much actual remaining capacity exists after reaching 0 AvailableEnergy()

before Terminate Voltage is reached. A loaded rate or no-load rate of compensation can be selected for

Reserve Cap by setting the [RESCAP] bit in the Pack Configuration register.

7.3.6.5 Design Energy Scale

Design Energy Scale is used to select the scale/unit of a set of data flash parameters. The value of Design

Energy Scale can be between 1 and 10 only.

When using Design Energy Scale > 1, the value for each of the parameters in 表7-15 must be adjusted to reflect

the new units. See 节7.3.12.

表7-15. Data Flash Parameter Scale/Unit-Based on Design Energy Scale

DATA FLASH PARAMETER

DESIGN ENERGY SCALE = 1 (default)

DESIGN ENERGY SCALE >1

Scaled by Design Energy Scale

Design Energy

mWh

Reserve Energy-mWh/cWh

Avg Power Last Run

User Rate-mW/cW

T Rise

mW

mWh

No Scale

7.3.6.6 Dsg Current Threshold

This register is used as a threshold by many functions in the BQ34Z100-G1 to determine if actual discharge

current is flowing into or out of the cell. The default for this register should be sufficient for most applications.

This threshold should be set low enough to be below any normal application load current but high enough to

prevent noise or drift from affecting the measurement.

7.3.6.7 Chg Current Threshold

This register is used as a threshold by many functions in the BQ34Z100-G1 to determine if actual charge current

is flowing into or out of the cell. The default for this register should be sufficient for most applications. This

threshold should be set low enough to be below any normal charge current but high enough to prevent noise or

drift from affecting the measurement.

7.3.6.8 Quit Current, Dsg Relax Time, Chg Relax Time, and Quit Relax Time

The Quit Current is used as part of the Impedance Track algorithm to determine when the BQ34Z100-G1 enters

RELAX mode from a current flowing mode in either the charge direction or the discharge direction. The value of

Quit Current is set to a default value that should be above the standby current of the host system.

Either of the following criteria must be met to enter RELAX mode:

1. |AverageCurrent()| < |Quit Current| for Dsg Relax Time

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2. |AverageCurrent()| > |Quit Current| for Chg Relax Time

After about 6 minutes in RELAX mode, the device attempts to take accurate OCV readings. An additional

requirement of dV/dt < 4 μV/s is required for the device to perform Qmax updates. These updates are used in

the Impedance Track algorithms. It is critical that the battery voltage be relaxed during OCV readings, and that

the current is not higher than C/20 when attempting to go into RELAX mode.

Quit Relax Time specifies the minimum time required for AverageCurrent() to remain above the Quit Current

threshold before exiting RELAX mode.

7.3.6.9 Qmax

Qmax Cell 0 contains the maximum chemical capacity of the cell and is determined by comparing states of

charge before and after applying the load with the amount of charge passed. It also corresponds to capacity at

low rate of discharge, such as C/20 rate. For high accuracy, this value is periodically updated by the device

during operation.

Based on the battery cell capacity information, the initial value of chemical capacity should be entered in the

Qmax Cell 0 data flash parameter. The Impedance Track algorithm will update this value and maintain it

internally in the gauge.

7.3.6.10 Update Status

The Update Status register indicates the status of the Impedance Track algorithm.

表7-16. Update Status Definitions

UPDATE STATUS

0x02

STATUS

Qmax and Ra data are learned, but Impedance Track is not enabled. This should be the standard

setting for a Golden Image File.

0x04

0x05

Impedance Track is enabled but Qmax and Ra data are not yet learned.

Impedance Track is enabled and only Qmax has been updated during a learning cycle.

Impedance Track is enabled. Qmax and Ra data are learned after a successful learning cycle. This

should be the operation setting for end equipment.

0x06

This register should only be updated by the device during a learning cycle or when the IT_ENABLE()

subcommand is received. Refer to the Preparing Optimized Default Flash Constants for Specific Battery Types

Application Report (SLUA334B).

7.3.6.11 Avg I Last Run

The device logs the current averaged from the beginning to the end of each discharge cycle. It stores this

average current from the previous discharge cycle in this register. This register should never be modified. It is

only updated by the device when required.

7.3.6.12 Avg P Last Run

The device logs the power averaged from the beginning to the end of each discharge cycle. It stores this

average power from the previous discharge cycle in this register. To get a correct average power reading, the

device continuously multiplies instantaneous current times Voltage() to get power. It then logs this data to derive

the average power. This register should never need to be modified. It is only updated by the device when the

required.

7.3.6.13 Cell Delta Voltage

The device stores the maximum difference of Voltage() during short load spikes and normal load, so the

Impedance Track algorithm can calculate remaining capacity for pulsed loads. It is not recommended to change

this value, as the device can learn this during operation.

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7.3.6.14 Ra Tables

This data is automatically updated during device operation. No user changes should be made except for reading

the values from another pre-learned pack for creating Golden Image Files. Profiles have format Cell0 R_a M,

where M is the number that indicates state-of-charge to which the value corresponds.

7.3.6.15 StateOfCharge() Smoothing

When operating conditions change (such as temperature, discharge current, and resistance, and so on), it can

lead to large changes of compensated battery capacity and battery capacity remaining. These changes can

result in large changes of StateOfCharge(). When [SmoothEn] is enabled in Pack Configuration C, the

smoothing algorithm injects gradual changes of battery capacity when conditions vary. This results in a gradual

change of StateOfCharge() and can provide a better end-user experience for StateOfCharge() reporting.

The RemainingCapacity(), FullChargeCapacity(), and StateOfCharge() are modified depending on [SmoothEn],

as below.

[SmoothEn]

RemainingCapacity()

TrueRC()

FullChargeCapacity()

TrueFCC()

StateOfCharge()

TrueRC() / TrueFCC()

FilteredRC() /FilteredFCC()

0

1

FilteredRC()

FilteredFCC()

7.3.6.16 Charge Efficiency

Tracking state-of-charge during the charge phase is relatively easy with chemistries such as Li-ion where

essentially none of the applied energy from the charger is lost to heat. However, lead-acid and NiMH chemistries

may demonstrate significant losses to heat during charging. Therefore, to more accurately track state of charge

and Time-to-Full during the charge phase, the BQ34Z100-G1 uses four charge-efficiency factors to compensate

for charge acceptance. These factors are Charge Efficiency, Charge Eff Reduction Rate, Charge Effi Drop

Off, and Charge Eff Temperature Compensation.

The BQ34Z100-G1 applies the Charge Efficiency when RelativeStateOfCharge() is less than the value stored

in Charge Efficiency Drop Off. When RelativeStateOfCharge() is > or equal to the value coded in Charge

Efficiency Drop Off, Charge Efficiency and Charge Efficiency Reduction Rate determine the charge

efficiency rate. Charge Efficiency Reduction Rate defines the percent efficiency reduction per percentage point

of RelativeStateOfCharge() over Charge Efficiency Drop Off. The Charge Efficiency Reduction Rate has

units of 0.1%. The BQ34Z100-G1 also adjusts the efficiency factors for temperature. Charge Efficiency

Temperature Compensation defines the percent efficiency reduction per degree C over 25°C. Charge

Efficiency Temperature Compensation has units of 0.01%.

Applying the four factors:

Effective Charge Efficiency % = Charge Efficiency – Charge Eff Reduction Rate [RSOC() – Charge Effi

Drop Off] –Charge Eff Temperature Compensation [Temperature –25°C]

Where: RSOC() ≥Charge Efficiency and Temperature ≥25°C

7.3.6.17 Lifetime Data Logging

The Lifetime Data Logging function helps development and diagnosis with the fuel gauge.

Note

IT_ENABLE must be enabled (Command 0x0021) for lifetime data logging functions to be active.

The fuel gauge logs the lifetime data as specified in the Lifetime Data and Lifetime Temp Samples data flash

subclasses. The data log recordings are controlled by the Lifetime Resolution data flash subclass.

The Lifetime Data Logging can be started by setting the IT_ENABLE bit and setting the LTUpdate Time register

to a non-zero value.

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Once the Lifetime Data Logging function is enabled, the measured values are compared to what is already

stored in the data flash. If the measured value is higher than the maximum or lower than the minimum value

stored in the data flash by more than the "Resolution" set for at least one parameter, the entire Data Flash

Lifetime Registers are updated after at least LTUpdateTime.

LTUpdateTime sets the minimum update time between DF writes. When a new maximum or minimum is

detected, an LT Update window of [update time] second is enabled and the DF writes occur at the end of this

window. Any additional max/min value detected within this window will also be updated. The first new max/min

value detected after this window will trigger the next LT Update window.

Internal to the fuel gauge, there exists a RAM maximum/minimum table in addition to the DF maximum/minimum

table. The RAM table is updated independent of the resolution parameters. The DF table is updated only if at

least one of the RAM parameters exceeds the DF value by more than the resolution associated with it. When DF

is updated, the entire RAM table is written to DF. Consequently, it is possible to see a new maximum or minimum

value for a certain parameter even if the value of this parameter never exceeds the maximum or minimum value

stored in the data flash for this parameter value by the resolution amount.

The Life Time Data Logging of one or more parameters can be reset or restarted by writing new default (or

starting) values to the corresponding data flash registers through sealed or unsealed access as described below.

However, when using unsealed access, new values will only take effect after device reset.

The logged data can be accessed as RW in UNSEALED mode from the Lifetime Data Subclass (Subclass ID =

59) of data flash. Lifetime data may be accessed (RW) when sealed using a process identical Manufacturer

Info Block B. The DataFlashBlock command code is 4. Note only the first 32 bytes of lifetime data (not

resolution parameters) can be RW when sealed. See 节 7.3.3.2 for sealed access. The logging settings such as

Temperature Resolution, Voltage Resolution, Current Resolution, and Update Time can be configured only in

UNSEALED mode by writing to the Lifetime Resolution Subclass (SubclassID = 66) of the data flash.

The Lifetime resolution registers contain the parameters that set the limits related to how much a data parameter

must exceed the previously logged maximum/minimum value to be updated in the lifetime log. For example, V

must exceed MaxV by more than Voltage Resolution to update MaxV in the data flash.

7.3.7 Device Configuration

The BQ34Z100-G1 has many features that can be enabled, disabled, or modified through settings in the Pack

Configuration registers. These registers are programmed/read via the methods described in 节7.3.3.1.

7.3.7.1 Pack Configuration Register

表7-17. Pack Configuration Register Bits

Bit 7

RESCAP

RFACTSTEP

Bit 6

CAL_EN

SLEEP

Bit 5

SCALED

RMFCC

Bit 4

RSVD

NiDT

Bit 3

VOLTSEL

NiDV

Bit 2

IWAKE

QPCCLEAR

Bit 1

RSNS1

GNDSEL

Bit 0

RSNS0

TEMPS

High Byte

Low Byte

Legend: RSVD = Reserved

RESCAP: No-load rate of compensation is applied to the reserve capacity calculation. True when set. Default is 0.

CAL_EN: When enabled, entering CALIBRATION mode is permitted. For special use only. Default = 0.

Scaled Capacity and/or Current bit. The mA, mAh, and cWh settings and reports will take on a value

that is artificially scaled. This setting has no actual effect within the gauge. It is the responsibility of the

host to reinterpret the reported values. Scaled current measurement is achieved by calibrating the

SCALED:

current measurement to a value lower than actual.

This bit selects between the use of an internal or external battery voltage divider. The internal divider is

for single cell use only. Default is 0.

VOLTSEL:

1 = External

0 = Internal

IWAKE/RSNS1/RSNS0:

These bits configure the current wake function (see 表7-23). Default is 0/0/1.

RFACTSTEP: Enables Ra step up/down to Max/Min Res Factor before disabling Ra updates. Default is 1.

SLEEP: The fuel gauge can enter sleep, if operating conditions allow. True when set. Default is 1.

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RMFCC: RM is updated with the value from FCC on valid charge termination. True when set. Default is 1.

Performs primary charge termination using the ΔT/Δt algorithm. See 节7.3.11. This bit is only acted

upon when a NiXX Chem ID is used.

NiDT:

Performs primary charge termination using the –ΔV algorithm. See 节7.3.11. This bit is only acted

upon when a NiXX Chem ID is used.

NiDV:

QPCCLEAR: Upon exit from RELAX where a DOD update occurred, the QMAX Passed Charge is cleared.

The ADC ground select control. The VSS pin is selected as ground reference when the bit is clear. Pin

10 is selected when the bit is set.

GNDSEL:

Selects external thermistor for Temperature() measurements. True when set. Uses internal temp when

clear. Default is 1.

TEMPS:

7.3.7.2 Pack Configuration B Register

表7-18. Pack Configuration B Register Bits

Bit 7

Bit 6

Bit 5

Bit 4

Bit 3

Bit 2

Bit 1

DoDWT

Bit 0

FConvEN

CHGDoDEoC

RSVD

VconsEN

RSVD

JEITA

LFPRelax

Legend: RSVD = Reserved

CHGDoDEoC: Enable DoD at EoC during charging only. True when set. Default is 1. Default setting is recommended.

VconsEN: Enable voltage measurement consistency check. True when set. Default is 1. Default setting is

recommended.

JEITA: Enables ChargingVoltage() and ChargingCurrent() to report data per the JEITA charging algorithm.

When disabled, the values programmed in Cell Charge Voltage T2–T3 and Charge Current T2–T3

are reported.

LFPRelax: Enables Lithium Iron Phosphate RELAX mode

DoDWT: Enable Dod weighting for LiFePO₄support when chemical ID 400 series is selected. True when set.

Default is 1.

FConvEN: Enable fast convergence algorithm. Default is 1. Default setting is recommended.

7.3.7.3 Pack Configuration C Register

表7-19. Pack Configuration C Register Bits

Bit 7

Bit 6

Bit 5

Bit 4

Bit 3

Bit 2

RELAX_JUMP_ RELAX_SMOOTH

OK _OK

Bit 1

Bit 0

SMOOTH

SOH_DISP

RSOC_HOLD FF_NEAR_EDV SleepWakeCHG

LOCK_0

SOH_DISP: Enables State-of-Health Display

RSOC_HOLD: RSOC_HOLD enables RSOC Hold Feature preventing RSOC from increasing during discharge.

NOTE: It is recommended to disable RSOC_HOLD when SOC Smoothing is enabled (SMOOTH = 1).

FF_NEAR_EDV: Enables Fast Filter Near EDV

SleepWakeCHG: Enable for faster sampling in SLEEP mode. Default setting is recommended.

LOCK_0: Keep RemainingCapacity() and RelativeStateOfCharge() jumping back during relaxation after 0 is

reached during discharge.

RELAX_JUMP_OK: Allows RSOC jump during RELAX mode if [SMOOTH =1]

RELAX_SMOOTH_OK: Smooth RSOC during RELAX mode if [SMOOTH =1]

SMOOTH: Enabled RSOC Smoothing

7.3.8 Voltage Measurement and Calibration

The device is shipped with a factory configuration for the default case of the 1-series Li-ion cell. This can be

changed by setting the VOLTSEL bit in the Pack Configuration register and by setting the number of series cells

in the data flash configuration section.

Multi-cell applications, with voltages up to 65535 mV, may be gauged by using the appropriate input scaling

resistors such that the maximum battery voltage, under all conditions, appears at the BAT input as approximately

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900 mV. The actual gain function is determined by a calibration process and the resulting voltage calibration

factor is stored in the data flash location Voltage Divider.

For single-cell applications, an external divider network is not required. Inside the IC, behind the BAT pin is a

nominal 5:1 voltage divider with 88 KΩ in the top leg and 22 KΩ in the bottom leg. This internal divider network

is enabled by clearing the VOLTSEL bit in the Pack Configuration register. This ratio is optimum for directly

measuring a single Li-ion cell where charge voltage is limited to 4.5 V.

For higher voltage applications, an external resistor divider network should be implemented as per the reference

designs in this document. The quality of the divider resistors is very important to avoid gauging errors over time

and temperature. It is recommended to use 0.1% resistors with 25-ppm temperature coefficient. Alternately, a

matched network could be used that tracks its dividing ratio with temperature and age due to the similar

geometry of each element. Calculation of the series resistor can be made per the equation below.

Note

Exceeding Vin max mV results in a measurement with degraded linearity.

The bottom leg of the divider resistor should be in the range of 15 KΩto 25 K, using 16.5 KΩ:

Rseries = 16500 Ω(Vin max mV –900 mV)/900 mV

For all applications, the Voltage Divider value in data flash will be used by the firmware to calibrate the total

divider ratio. The nominal value for this parameter is the maximum expected value for the stack voltage. The

calibration routine adjusts the value to force the reported voltage to equal the actual applied voltage.

7.3.8.1 1S Example

For stack voltages under 4.5 V max, it is not necessary to provide an external voltage divider network. The

internal 5:1 divider should be selected by clearing the VOLTSEL bit in the Pack Configuration register. The

default value for Voltage Divider is 5000 (representing the internal 5000:1000 mV divider) when no external

divider resistor is used, and the default number of series cells = 1. In the 1-S case, there is usually no

requirement to calibrate the voltage measurement, since the internal divider is calibrated during factory test to

within 2 mV.

7.3.8.2 7S Example

In the multi-cell case, the hardware configuration is different. An external voltage divider network is calculated

using the Rseries formula above. The bottom leg of the divider should be in the range of 15 KΩ to 25 KΩ. For

more details on configuration, see 节8.2.2.1.

7.3.8.3 Autocalibration

The device provides an autocalibration feature that will measure the voltage offset error across SRP and SRN

from time-to-time as operating conditions change. It subtracts the resulting offset error from normal sense

resistor voltage, V_SR, for maximum measurement accuracy.

The gas gauge performs a single offset calibration when:

1. The interface lines stay low for a minimum of Bus Low Time and

2. V_SR> Deadband.

The gas gauge also performs a single offset when:

1. The condition of AverageCurrent() ≤Autocal Min Current and

2. {Voltage change since last offset calibration ≥Delta Voltage} or {temperature change since last offset

calibration is greater than Delta Temperature for ≥Autocal Time}.

Capacity and current measurements should continue at the last measured rate during the offset calibration when

these measurements cannot be performed. If the battery voltage drops more than Cal Abort during the offset

calibration, the load current has likely increased considerably; hence, the offset calibration will be aborted.

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7.3.9 Temperature Measurement

The BQ34Z100-G1 can measure temperature via the on-chip temperature sensor or via the TS input, depending

on the setting of the [TEMPS] bit PackConfiguration(). The bit is set by using the PackConfiguration() function,

described in 节7.3.2.

Temperature measurements are made by calling the Temperature() function (see 节 7.3.1.1 for specific

information).

When an external thermistor is used, REG25 (pin 7) is used to bias the thermistor and TS (pin 11) is used to

measure the thermistor voltage (a pull-down circuit is implemented inside the device). The device then correlates

the voltage to temperature, assuming the thermistor is a Semitec 103AT or similar device.

7.3.10 Overtemperature Indication

7.3.10.1 Overtemperature: Charge

If during charging, Temperature() reaches the threshold of OT Chg for a period of OT Chg Time and

AverageCurrent() > Chg Current Threshold, then the [OTC] bit of Flags() is set. Note: If OT Chg Time = 0, then

the feature is completely disabled.

When Temperature() falls to OT Chg Recovery, the [OTC] of Flags() is reset.

7.3.10.2 Overtemperature: Discharge

If during discharging Temperature() reaches the threshold of OT Dsg for a period of OT Dsg Time, and

AverageCurrent() ≤ –Dsg Current Threshold, then the [OTD] bit of Flags() is set. If OT Dsg Time = 0, then

the feature is completely disabled.

When Temperature() falls to OT Dsg Recovery, the [OTD] bit of Flags() is reset.

7.3.11 Charging and Charge Termination Indication

For proper BQ34Z100-G1 operation, the battery per cell charging voltage must be specified by the user in Cell

Charging Voltage. The default value for this variable is Charging Voltage = 4200 mV. This parameter should

be set to the recommended charging voltage for the entire battery stack divided by the number of series cells.

The device detects valid charge termination in one of three ways:

1. Current Taper method:

a. During two consecutive periods of Current Taper Window, the AverageCurrent() is less than Taper

Current AND

b. During the same periods, the accumulated change in capacity > 0.25 mAh /Taper Current Window

AND

c. Voltage() is > Charging Voltage –Charging Taper Voltage. When this occurs, the [CHG] bit of Flags()

is cleared. Also, if the [RMFCC] bit of Pack Configuration is set, and RemainingCapacity() is set equal to

FullChargeCapacity().

2. Delta Temperature (ΔT/Δt) method—For ΔT/Δt, the BQ34Z100-G1 detects an increase in temperature

over many seconds. The ΔT/Δt setting is programmable in the temperature step, Delta Temp (0°C –

25.5°C), and the time step, Delta Temp Time (0 s–1000 s). Typical settings for 1°C/minute include 2°C/120

s and 3°C/180 s (default). Longer times may be used for increased slope resolution.

In addition to the ΔT/Δt timer, a holdoff timer starts when the battery is charged at more than Holdoff

Current (default is 240 mA), and the temperature is above Holdoff Temp. Until this timer expires, ΔT/Δt

detection is suspended. If Current() drops below Holdoff Current or Temperature() below Holdoff Temp,

the holdoff timer resets and restarts only when the current and temperature conditions are met again.

3. Negative Delta Voltage (–ΔV) method—For negative delta voltage, the BQ34Z100-G1 detects a charge

termination when the pack voltage drops during charging by Cell Negative Delta Volt for a period of Cell

Negative Delta Time during which time Voltage() must be greater than Cell Negative Qual Volt.

When either condition occurs, the Flags()[CHG] bit is cleared. Also, if the [RMFCC] bit of Pack Configuration is

set, and RemainingCapacity() is set equal to FullChargeCapacity().

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Cell Negative Delta Time

Cell Negative Delta Volt

Cell Negative Delta Qual Volt

Voltage()

Delta Temp

Temperature()

Delta Temp Time

Holdoff Time

Current()

Holdoff Current

图7-1. NiXX Termination

7.3.12 SCALED Mode

The device supports high current and high capacity batteries above 32.76 Amperes and 29 Ampere-Hours

indirectly by scaling the actual sense resistor value compared with the calibrated value stored in the device. The

need for this is due to the standardization of a 2-byte data command having a maximum representation of +/–

32767. When [SCALED] is set in the Pack Configuration register, this indicates that the current and capacity

data is scaled.

It is important to know that setting the SCALED flag does not actually change anything in the operation of the

gauge. It serves as a notice to the host that the various reported values should be reinterpreted based on the

scale used. Because the flag has no actual effect, it can be used to represent other scaling values. See 节

7.3.6.5.

Note

It is recommended to only scale by a value between 1 and 10 to optimize resolution and accuracy

while still extending the data range.

7.3.13 LED Display

The device supports multiple options for using one to 16 LEDs as an output device to display the remaining state

of charge, or, if Pack Configuration C [SOH_DISP] is set, then state-of-health. The LED/COMM Configuration

register determines the behavior.

表7-20. LED/COMM Configuration Bits

Bit 7

EXT_LED3

Bit 6

EXT_LED2

Bit 5

Bit 4

Bit 3

Bit 2

Bit 1

LED_Mode1

Bit 0

LED_Mode0

EXT_LED1

EXT_LED0

LED_ON

LED_Mode2

Bits 0, 1, 2 are a code for one of five modes. 0 = No LED, 1 = Single LED, 2 = Four LEDs, 3 = External LEDs

with I²C comm, 4 = External LEDs with HDQ comm.

Setting Bit 3, LED_ON, will cause the LED display to be always on, except in Single LED mode where it is not

applicable. When clear (default), the LED pattern will only be displayed after holding an LED display button for

one to two seconds. The button applies 2.5 V from REG25 pin 7 to VEN pin 2 (refer to 节 8.2). The LED Hold

Time parameter may be used to configure how long the LED display remains on if LED_ON is clear. LED Hold

Time configures the update interval for the LED display if LED_ON is set.

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Bits 4, 5, 6, and 7 are a binary code for number of external LEDs. Code 0 is reserved. Codes 1 through 15

represents 2~16 external LEDs. So, number of External LEDs is 1 + Value of the 4-bit binary code. Display of

Remaining Capacity RemainingCapacity()or StateOfHealth() will be evenly divided among the selected number

of LEDs.

Single LED mode—Upon detecting an A/D value representing 2.5 V on the VEN pin, Single LED mode will

toggle the LED as duty cycle on within a period of 1 s where each 1% of RSOC is a 7.8125-ms high time. So, for

example, 10% RSOC or SOH will have the LED on for 78.1 ms and off for 921.9 ms. 90% RSOC or SOH will

have the LED on for 703.125 ms and off for 296.875 ms. Any value > 90% will display as 90%.

Four-LED mode—Upon detecting an A/D value representing 2.5 V on the VEN pin, Four-LED mode will display

the RSOC or SOH by driving pins RC2(LED1), RC0(LED2), RA1(LED3),RA2(LED4) in a proportional manner

where each LED represents 25% of the remaining state-of-charge. For example, if RSOC or SOH = 67%, three

LEDs will be illuminated.

External LED mode—Upon detecting an A/D value representing 2.5 V on the VEN pin, External LED mode will

transmit the RSOC into an SN74HC164 (for 2–8 LEDs) or two SN74HC164 devices (for 9–16 LEDs) using a

bit-banged approach with RC2 as Clock and RC0 as Data (see 图 8-4). LEDs will be lit for a number of seconds

as defined in a data flash parameter. Refer to the SN54HC164, SN74HC164 8-Bit Parallel-Out Serial Shift

Registers Data Sheet (SCLS115E) for details on these devices.

Extended commands are available to turn the LEDs on and off for test purposes.

7.3.14 Alert Signal

Based on the selected LED mode, various options are available for the hardware implementation of an Alert

signal. Software configuration of the Alert Configuration register determines which alert conditions will assert the

ALERT pin.

表7-21. ALERT Signal Pins

CONFIG REGISTER

HEX CODE

MODE

DESCRIPTION

No LED

ALERT PIN

ALERT PIN NAME

COMMENT

0

1

P2

0

1

Single LED

Filter and FETs are required to

eliminate temperature sense pulses.

See 节8.2.

2

4 LED

11

P6

2

5-LED Expander with I²C

Host Comm

3

4

12

13

P5

P4

43

93

44

94

10-LED Expander with I²C

Host Comm

5-LED Expander with HDQ

Host Comm

10-LED Expander with HDQ

Host Comm

The port used for the Alert output will depend on the mode setting in LED/Comm Configuration as defined in 表

7-21. The default mode is 0. The ALERT pin will be asserted by driving LOW. However, note that in LED/COM

mode 2, pin TS/P6, which has a dual purpose as temperature sense pin, will be driven low except when

temperature measurements are made each second. See the reference schematic ( 图 8-4) for filter

implementation details if host alert sensing requires a continuous signal.

The ALERT pin will be a logical OR of the selected bits in the new configuration register when asserted in the

Flags register. The default value for Alert Configuration register is 0.

表7-22. Alert Configuration Register Bit Definitions

Bit 7

OTC

Bit 6

Bit 5

Bit 4

Bit 3

Bit 2

Bit 1

Bit 0

CHG

High Byte

OTD

BAT_HIGH

BATLOW

CHG_INH

XCHG

FC

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表7-22. Alert Configuration Register Bit Definitions (continued)

Bit 7

Bit 6

Bit 5

Bit 4

Bit 3

Bit 2

Bit 1

Bit 0

Low Byte

OCVTAKEN

RSVD

CF

RSVD

RCA

EOD

DSG

Legend: RSVD = Reserved

OTC: Over-Temperature in Charge condition is detected. ALERT is enabled when set.

OTD: Over-Temperature in Discharge condition is detected. ALERT is enabled when set.

BAT_HIGH: Battery High bit that indicates a high battery voltage condition. Refer to the data flash CELL BH parameters for

threshold settings. ALERT is enabled when set.

BATLOW: Battery Low bit that indicates a low battery voltage condition. Refer to the data flash parameters for threshold

settings. ALERT is enabled when set.

CHG_INH: Charge Inhibit: unable to begin charging. Refer to the data flash [Charge Inhibit Temp Low, Charge Inhibit Temp

High] parameters. ALERT is enabled when set.

XCHG: Charging disallowed ALERT is enabled when set.

FC:

Full charge is detected. FC is set when charge termination is reached and FC Set% = –1 (see 节7.3.11 for details)

or StateOfCharge() is larger than FC Set% and FC Set% is not –1. ALERT is enabled when set.

CHG: (Fast) charging allowed. ALERT is enabled when set.

OCVTAKEN: Cleared on entry to RELAX mode and set to 1 when OCV measurement is performed in RELAX mode. ALERT is

enabled when set.

CF: Condition Flag set. ALERT is enabled when set.

RCA: Remaining Capacity Alarm reached. ALERT is enabled when set.

EOD: End-of-Discharge Threshold reached. ALERT is enabled when set.

DSG: Discharging detected. ALERT is enabled when set.

7.3.15 Communications

7.3.15.1 Authentication

The BQ34Z100-G1 can act as a SHA-1/HMAC authentication slave by using its internal engine. Sending a 160-

bit SHA-1 challenge message to the device will cause the IC to return a 160-bit digest, based upon the challenge

message and hidden plain-text authentication keys. When this digest matches an identical one generated by a

host or dedicated authentication master (operating on the same challenge message and using the same plain

text keys), the authentication process is successful.

The device contains a default plain-text authentication key of 0x0123456789ABCDEFFEDCBA987654321. If

using the device's internal authentication engine, the default key can be used for development purposes, but

should be changed to a secret key and the part immediately sealed before putting a pack into operation.

7.3.15.2 Key Programming

When the device's SHA-1/HMAC internal engine is used, authentication keys are stored as plain-text in memory.

A plain-text authentication key can only be written to the device while the IC is in UNSEALED mode. Once the IC

is UNSEALED, a 0x00 is written to BlockDataControl() to enable the authentication data commands. Next,

subclass ID and offset are specified by writing 0x70 and 0x00 to DataFlashClass() and DataFlashBlock(),

respectively. The device is now prepared to receive the 16-byte plain-text key, which must begin at command

location 0x4C. The key is accepted once a successful checksum has been written to BlockDataChecksum() for

the entire 32-byte block (0x40 through 0x5F), not just the 16-byte key.

7.3.15.3 Executing an Authentication Query

To execute an authentication query in UNSEALED mode, a host must first write 0x01 to the BlockDataControl()

command to enable the authentication data commands. If in SEALED mode, 0x00 must be written to

DataFlashBlock().

Next, the host writes a 20-byte authentication challenge to the AuthenticateData() address locations (0x40

through 0x53). After a valid checksum for the challenge is written to AuthenticateChecksum(), the device uses

the challenge to perform its own SHA-1/HMAC computation in conjunction with its programmed keys. The

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resulting digest is written to AuthenticateData(), overwriting the pre-existing challenge. The host may then read

this response and compare it against the result created by its own parallel computation.

7.3.15.4 HDQ Single-Pin Serial Interface

The HDQ interface is an asynchronous return-to-one protocol where a processor sends the command code to

the device. With HDQ, the least significant bit (LSB) of a data byte (command) or word (data) is transmitted first.

Note that the DATA signal on pin 12 is open-drain and requires an external pull-up resistor. The 8-bit command

code consists of two fields: the 7-bit HDQ command code (bits 0–6) and the 1-bit R/W field (MSB Bit 7). The

R/W field directs the device either to:

• Store the next 8 or 16 bits of data to a specified register or

• Output 8 or 16 bits of data from the specified register.

The HDQ peripheral can transmit and receive data as either an HDQ master or slave.

The return-to-one data bit frame of HDQ consists of three distinct sections. The first section is used to start the

transmission by either the host or by the device taking the DATA pin to a logic-low state for a time t_STRH,B. The

next section is for data transmission where the data is valid for a time t_DSUafter the negative edge used to start

communication. The data is held until a time t_DV, allowing the host or device time to sample the data bit. The final

section is used to stop the transmission by returning the DATA pin to a logic-high state by at least a time t_SSU

after the negative edge used to start communication. The final logic-high state is held until the end of t_CYCH,B

,

allowing time to ensure the transmission was stopped correctly. The timing for data and break communication is

shown in 节6.13.

HDQ serial communication is normally initiated by the host processor sending a break command to the device. A

break is detected when the DATA pin is driven to a logic-low state for a time t_Bor greater. The DATA pin should

then be returned to its normal ready high logic state for a time t_BR. The device is now ready to receive

information from the host processor.

The device is shipped in the I²C mode. TI provides tools can be used to switch from I²C to HDQ

communications.

7.3.15.5 I²C Interface

The gas gauge supports the standard I²C read, incremental read, one-byte write quick read, and functions. The

7-bit device address (ADDR) is the most significant 7 bits of the hex address and is fixed as 1010101. The 8-bit

device address is therefore 0xAA or 0xAB for write or read, respectively.

Host Generated

Fuel Gauge Generated

S

ADDR[6:0]

0

A

CMD[7:0]

A

DATA[7:0]

A

P

S

ADDR[6:0]

1

A

DATA[7:0]

N P

(a) 1-byte write

(b) quick read

DATA[7:0]

N

CMD[7:0]

ADDR[6:0]

1

A

ADDR[6:0]

S

0

A

P

A

Sr

(c) 1-byte read

A

Sr

1

A

ADDR[6:0]

A

N P

S

ADDR[6:0]

0

A

CMD[7:0]

DATA[7:0]

. . .

(d) incremental read

图7-2. Supported I²C formats: (a) 1-byte write, (b) quick read, (c) 1 byte-read, and (d) incremental read (S

= Start, Sr = Repeated Start, A = Acknowledge, N = No Acknowledge, and P = Stop).

The “quick read” returns data at the address indicated by the address pointer. The address pointer, a register

internal to the I²C communication engine, increments whenever data is acknowledged by the device or the I²C

master. “Quick writes” function in the same manner and are a convenient means of sending multiple bytes to

consecutive command locations (such as 2-byte commands that require two bytes of data).

S

ADDR[6:0]

0

A

CMD[7:0]

A

DATA[7:0]

A

P

图7-3. Attempt To Write a Read-Only Address (Nack After Data Sent By Master)

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CMD[7:0]

S

ADDR[6:0]

0

A

N P

图7-4. Attempt To Read An Address Above 0x7F (Nack Command)

CMD[7:0]

DATA[7:0]

A

DATA[7:0]

ADDR[6:0]

S

0

A

N

P

A

N

. . .

图7-5. Attempt At Incremental Writes (nack All Extra Data Bytes Sent)

A

Sr

1

A

ADDR[6:0]

A

N P

S

ADDR[6:0]

0

A

CMD[7:0]

DATA[7:0]

. . .

Address

0x7F

Data From

addr 0x7F

Data From

addr 0x00

图7-6. Incremental Read at the Maximum Allowed Read Address

The I²C engine releases both SDA and SCL if the I²C bus is held low for Bus Low Time. If the gas gauge was

holding the lines, releasing them frees the master to drive the lines. If an external condition is holding either of

the lines low, the I²C engine enters the low-power SLEEP mode.

7.3.15.6 Switching Between I²C and HDQ Modes

Texas Instruments ships the BQ34Z100-G1 device in I²C mode (factory default); however, this mode can be

changed to HDQ mode if needed.

Note

To make changes in the data flash, the device must be in I²C mode.

7.3.15.6.1 Converting to HDQ Mode

Using the Battery Management Studio (bqStudio) tool to configure the BQ34Z100-G1 to HDQ mode, a write to

the Control command [0x00] of [0x7C40] is required.

To configure HDQ mode with bqStudio:

1. Navigate to the Registers screen. HDQ mode is configured by writing data [0x7C40] to Control command

[0x00].

2. Click on the Control value field.

3. Write 0x7C40 into the text field and click OK. Because the change in communication protocol involves

writing a flag for the new protocol to data flash, it takes about 200 ms to complete. During this time,

communications are disabled. Once the command takes effect, the bqStudio will no longer communicate

with the gauge.

4. Close bqStudio. Change communication connections from the gauge to the HDQ port of the EV2400 device

(www.ti.com/tool/ev2400 for more information). Run bqStudio. The bqStudio auto-detection only works for

devices that operate in I²C mode.

When the BQ34Z100-G1 device is in HDQ mode, it will not be detected.

5. Select BQ34Z100-G1 manually. Click OK to all messages that indicate that the device is not detected or not

responsive. When the Registers screen starts, it will take a period of time from when bqStudio first tries to

communicate with the device in I²C before trying HDQ mode.

Once it is complete, the Registers screen will display data as it had done initially when it was in I²C mode. The

refresh is noticeably slower, due to the slow speed of HDQ.

Use the Registers screen only while the BQ34Z100-G1 is in HDQ mode. All other functions will not be supported

in Battery Management Studio.

7.3.15.6.2 Converting to I²C Mode

Texas Instruments ships the BQ34Z100-G1 device in I²C mode, which is required when updating data flash.

However, this mode can be changed to HDQ mode if needed.

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To configure the device to use I²C mode when presently in the HDQ mode, a write to the Control command

[0x00] of [0x29E7] is required. Use the Battery Management Studio (bqStudio) tool, as follows:

1. Click on the Control value field. Write [0x29E7] in the text field and click OK. Once the command takes

effect, bqStudio will no longer communicate with the gauge.

2. Close bqStudio. Change communication connections from the gauge to the I²C port of the EV2400 device.

Run bqStudio.

7.3.16 Power Control

7.3.16.1 Reset Functions

When the device detects either a hardware or software reset ( MRST pin is driven low or the [RESET] bit of

Control() is initiated, respectively), it determines the type of reset and increments the corresponding counter.

This information is accessible by issuing the command Control() function with the RESET_DATA subcommand.

As shown in 图 7-7, if a partial reset was detected, a RAM checksum is generated and compared against the

previously stored checksum. If the checksum values do not match, the RAM is reinitialized (a “Full Reset”).

The stored checksum is updated every time RAM is altered.

DEVICE RESET

Generate Active

RAM checksum

value

NO

Stored

checksum

Do the Checksum

Values Match?

Re-initialize all

RAM

YES

NORMAL

OPERATION

Active RAM

changed ?

NO

YES

Store

checksum

Generate new

checksum value

图7-7. Partial Reset Flow Diagram

7.3.16.2 Wake-Up Comparator

The wake up comparator is used to indicate a change in cell current while the device is in SLEEP mode.

PackConfiguration() uses bits [RSNS1–RSNS0] to set the sense resistor selection. PackConfiguration() uses

the [IWAKE] bit to select one of two possible voltage threshold ranges for the given sense resistor selection. An

internal interrupt is generated when the threshold is breached in either charge or discharge directions. A setting

of 0x00 of RSNS1..0 disables this feature.

表7-23. I_WAKEt=Threshold Settings

RSNS1 ⁽¹⁾

RSNS0

IWAKE

Vth(SRP–SRN)

Disabled

0

1

Disabled

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表7-23. I_WAKEt=Threshold Settings (continued)

RSNS1 ⁽¹⁾

RSNS0

IWAKE

Vth(SRP–SRN)

+1.25 mV or –1.25 mV

0

1

0

1

0

1

0

1

0

1

+2.5 mV or –2.5 mV

+5 mV or –5 mV

+10 mV or –10 mV

(1) The actual resistance value vs. the setting of the sense resistor is not important. Only the actual voltage threshold when calculating the

configuration is important.

7.3.16.3 Flash Updates

Data flash can only be updated if Voltage() ≥ Flash Update OK Voltage. Flash programming current can cause

an increase in LDO dropout. The value of Flash Update OK Voltage should be selected such that the

device V_CCvoltage does not fall below its minimum of 2.4 V during Flash write operations. The default value of

2800 mV is appropriate; however, for more information, refer to Step 3.

7.4 Device Functional Modes

The device has three power modes: NORMAL mode, SLEEP mode, and FULL SLEEP mode.

• In NORMAL mode, the device is fully powered and can execute any allowable task.

• In SLEEP mode, the gas gauge exists in a reduced-power state, periodically taking measurements and

performing calculations.

• In FULL SLEEP mode, the high frequency oscillator is turned off, and power consumption is further reduced

compared to SLEEP mode.

7.4.1 NORMAL Mode

The gas gauge is in NORMAL mode when not in any other power mode. During this mode, AverageCurrent(),

Voltage(), and Temperature() measurements are taken, and the interface data set is updated. Determinations to

change states are also made. This mode is exited by activating a different power mode.

7.4.2 SLEEP Mode

SLEEP mode is entered automatically if the feature is enabled (Pack Configuration [SLEEP] = 1) and Average

Current() is below the programmable level Sleep Current. Once entry to sleep has been qualified but prior to

entry to SLEEP mode, the device performs an ADC autocalibration to minimize offset. Entry to SLEEP mode can

be disabled by the [SLEEP] bit of Pack Configuration(), where 0 = disabled and 1 = enabled. During SLEEP

mode, the device periodically wakes to take data measurements and updates the data set, after which it then

returns directly to SLEEP. The device exits SLEEP if any entry condition is broken, a change in protection status

occurs, or a current in excess of I_WAKEthrough R_SENSEis detected.

7.4.3 FULL SLEEP Mode

FULL SLEEP mode is entered automatically when the device is in SLEEP mode and the timer counts down to 0

(Full Sleep Wait Time > 0). FULL SLEEP mode is disabled when Full Sleep Wait Time is set to 0.

During FULL SLEEP mode, the device periodically takes data measurements and updates its data set. However,

a majority of its time is spent in an idle condition.

The gauge exits the FULL SLEEP mode when there is any communication activity. Therefore, the execution of

SET_FULLSLEEP sets [FULLSLEEP] bit, but the EVSW might still display the bit clear. The FULL SLEEP mode

can be verified by measuring the current consumption of the gauge. In this mode, the high frequency oscillator is

turned off. The power consumption is further reduced compared to the SLEEP mode.

While in FULL SLEEP mode, the fuel gauge can suspend serial communications as much as 4 ms by holding

the communication line(s) low. This delay is necessary to correctly process host communication since the fuel

gauge processor is mostly halted. For HDQ communication one host message will be dropped.

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8 Application and Implementation

Note

Information in the following applications sections is not part of the TI component specification, and TI

does not warrant its accuracy or completeness. TI’s customers are responsible for determining

suitability of components for their purposes, as well as validating and testing their design

implementation to confirm system functionality.

8.1 Application Information

The BQ34Z100-G1 is a flexible gas gauge device with many options. The major configuration choices comprise

the battery chemistry, digital interface, and display.

8.2 Typical Applications

图 8-1 is a simplified diagram of the main features of the BQ34Z100-G1. Specific implementations detailing the

main configuration options are shown later in this section.

图8-1. BQ34Z100-G1 Simplified Implementation

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The BQ34Z100-G1 can be used to provide a single Li-ion cell gas gauge with a 5-bar LED display.

m p p 5 7 0 1 0 .

0 3 R

2

S H 1 S H

图8-2. 1-Cell Li-ion and 5-LED Display

The BQ34Z100-G1 can also be used to provide a gas gauge for a multi-cell Li-ion battery with a 5-bar LED

display.

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S

2

3

1

G

D

7 R

图8-3. Multi-Cell and 5-LED Display

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图8-4 shows the BQ34Z100-G1 full features enabled.

1

2

3

4

5

6

7

8

N R G 4 -

6 1 L 0 P T C Q

2

1

2 H S

1 H S

m p p 5 7 0 1 0 .

0

R 3

图8-4. Full-Featured Evaluation Module EVM

8.2.1 Design Requirements

For additional design guidelines, refer to the BQ34Z100 EVM Wide Range Impedance Track Enabled Battery

Fuel Gauge User's Guide (SLUU904).

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8.2.2 Detailed Design Procedure

8.2.2.1 Step-by-Step Design Procedure

8.2.2.1.1 STEP 1: Review and Modify the Data Flash Configuration Data.

While many of the default parameters in the data flash are suitable for most applications, the following should

first be reviewed and modified to match the intended application.

• Design Capacity: Enter the value in mAh for the battery, even from the “design energy”point of view.

• Design Energy: Enter the value in mWh.

• Cell Charge Voltage Tx-Ty: Enter the desired cell charge voltage for each JEITA temperature range.

8.2.2.1.2 STEP 2: Review and Modify the Data Flash Configuration Registers.

• LED_Comm Configuration: See 表7-20 and 表7-21 to aid in selection of an LED mode. Note that the pin

used for the optional Alert signal is dependent upon the LED mode selected.

• Alert Configuration: See 表7-22 to aid in selection of which faults will trigger the ALERT pin.

• Number of Series Cells

• Pack Configuration: Ensure that the VOLSEL bit is set for multi-cell applications and cleared for single-cell

applications.

8.2.2.1.3 STEP 3: Design and Configure the Voltage Divider.

If the battery contains more than 1-s cells, a voltage divider network is required. Design the divider network,

based on the formula below. The voltage division required is from the highest expected battery voltage, down to

approximately 900 mV. For example, using a lower leg resistor of 16.5 KΩ where the highest expected voltage

is 32000 mV:

Rseries = 16.5 KΩ(32000 mV –900 mV)/900 mV = 570.2 KΩ

Based on price and availability, a 600-K resistor or pair of 300-K resistors could be used in the top leg along with

a 16.5-K resistor in the bottom leg.

Set the Voltage Divider in the Data Flash Calibration section of the Evaluation Software to 32000 mV.

Use the Evaluation Software to calibrate to the applied nominal voltage; for example, 24000 mV. After

calibration, a slightly different value will appear in the Voltage Divider parameter, which can be used as a

default value for the project.

Following the successful voltage calibration, calculate and apply the value to Flash Update OK Cell Volt as:

Flash Update OK Cell Volt = 2800 mV × Number Of Series Cells × 5000/Voltage Divider.

8.2.2.1.4 STEP 4: Determine the Sense Resistor Value.

To ensure accurate current measurement, the input voltage generated across the current sense resistor should

not exceed +/–125 mV. For applications with a very high dynamic range, it is allowable to extend this range to

absolute maximum of +/–300 mV for overload conditions where a protector device will be taking independent

protective action. In such an overloaded state, current reporting and gauging accuracy will not function correctly.

The value of the current sense resistor should be entered into both CC Gain and CC Delta parameters in the

Data Flash Calibration section of the Evaluation Software.

8.2.2.1.5 STEP 5: Review and Modify the Data Flash Gas Gauging Configuration, Data, and State.

• Load Select: See 表7-13 and 表7-14.

• Load Mode: See 表7-13 and 表7-14.

• Cell Terminate Voltage: This is the theoretical voltage where the system will begin to fail. It is defined as

zero state-of-charge. Generally a more conservative level is used in order to have some reserve capacity.

Note the value is for a single cell only.

• Quit Current: Generally should be set to a value slightly above the expected idle current of the system.

• Qmax Cell 0: Start with the C-rate value of your battery.

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8.2.2.1.6 STEP 6: Determine and Program the Chemical ID.

Use the BQChem feature in the Evaluation Software to select and program the chemical ID matching your cell. If

no match is found, use the procedure defined in TI's (Mathcad Chemistry Selection Tool (SLUC138).

8.2.2.1.7 STEP 7: Calibrate.

Follow the steps on the Calibration screen in the Evaluation Software. Achieving the best possible calibration is

important before moving on to Step 8. For mass production, calibration is not required for single-cell applications.

For multi-cell applications, only voltage calibration is required. Current and temperature may be calibrated to

improve gauging accuracy if needed.

8.2.2.1.8 STEP 8: Run an Optimization Cycle.

Refer to the Preparing Optimized Default Flash Constants for Specific Battery Types Application Report

(SLUA334B).

8.2.3 Battery Chemistry Configuration

When changing the battery chemistry, there are several configurations that need to be considered specific to

each chemistry. The CHEM ID drives the majority of the changes but some do remain. These are mostly

associated to the charge termination algorithm, but there are some additional registers that should be

programmed based on the main chemistry type selected.

8.2.3.1 Battery Chemistry Charge Termination

The default setup of the BQ34Z100-G1 is for Li-ion chemistries.

The charge-termination specific configurations include:

表8-1. Charge Termination Configurations

Class Name

Configuration

Subclass Name

Parameter Name

Default Value

Units

Charge Termination

Taper Current

100

25

mA

mAh

mV

s

Min Taper Capacity

Cell Taper Voltage

100

40

Current Taper Window

When changing to Lead Acid chemistry there are further configuration options.

表8-2. Configuration Options

Class Name

Configuration

Subclass Name

Charge

Parameter Name

Pb Temp Comp

Pb Reduction Rate

Default Value

25%

Units

Charge

10%

When using Nickel Metal Hydride (NiMH) or Nickel Cadmium (NiCd) batteries, the charge termination criteria

change significantly.

表8-3. NiMH and NiCd Charge Configuration Options

Class Name

Configuration

Subclass Name

Parameter Name

Default Value

Units

Charge Termination

NiMH Delta Temp

3

180

100

240

25

0.1°C

s

NiMH Delta Temp Time

NiMH Hold Off Time

s

NiMH Hold Off Current

mA

0.1°C

mV

s

NiMH Hold Off Temp

NiMH Cell Negative Delta Volt

NiMH Cell Negative Delta Time

NiMH Cell Neg Delta Qual Volt

17

16

4200

mV

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To switch the charge termination criteria suitable for NiMH/NiCd, set the [NiDT] and/or [NiDV] bits. See 节 7.3.11

for further details.

Where:

NiDT: Performs primary charge termination using the ΔT/Δt algorithm.

NiDV: Performs primary charge termination using the –ΔV algorithm.

Note

When a Nickel-based chemistry Chem ID is used, then the Li-ion/PbA charge termination method is

NOT used regardless of the configuration of the NiDV and NiDT bits.

表8-4. Additional Chemistry-Related Configurations

Parameters

Default Load Select

Li-ion

Lead Acid

NiMH/NiCd

1

3

Cell Term V Delta

200

90

100

50

100

50

Min % Passed Chg for 1st Qmax

8.2.4 Replaceable Battery Systems

The BQ34Z100-G1 is also capable of being used as a system-side gauge where the actual battery can be

removed and replaced from the system. However, there are limitations to this feature. The replacing battery

should be of the same chemistry and close to the original design capacity of the one to be replaced, as this

ensures that the other configuration options of the device are still valid.

The BQ34Z100-G1 is enabled to have the option to learn new Impedance Track data in larger steps through the

following configuration registers:

表8-5. Learning Configuration Registers for Replaceable Battery Packs (Host Side Gauge)

Class Name

Gas Gauging

Subclass name

Parameter Name

Default Value

Units

IT Cfg

Max Res Factor

50

1

n/a

IT Cfg

Min Res Factor

Max Res Scale

IT Cfg

32000

1

IT Cfg

Min Res Scale

IT Cfg

Max QMAX Change

100

If the BQ34Z100-G1 and the battery are not designed to be separated, it is recommended to make the following

changes. This helps to prevent erroneous measurements from causing the Impedance Track data to be updated

to extreme values.

表8-6. Learning Configuration Registers for Non-Removable Battery Packs

Class Name

Gas Gauging

Subclass name

Parameter Name

Value

Units

IT Cfg

Max Res Factor

15

3

n/a

IT Cfg

Min Res Factor

Max Res Scale

IT Cfg

5000

200

30

IT Cfg

Min Res Scale

IT Cfg

Max QMAX Change

8.2.5 Digital Interface Options

The default setup of the BQ34Z100-G1 uses the I²C digital interface with the ALERT pin as an additional digital

interrupt output. It is recommended to keep the device in this mode throughout development and battery

production even if the single-wire HDQ interface will be used in the field. The I²C is much faster so any

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modifications to the device configuration and any data logging during battery evaluation or testing would be

faster.

There are a series of commands required to switch between I²C and HDQ, which are detailed in 节7.3.15.6.

8.2.6 Display Options

By default, the display is disabled. To setup the appropriate display, the LED/COMM Configuration data flash

register needs to be programmed. Care should be taken to ensure the correct digital interface options

(Communications and ALERT) are not interfered with when configuring the display. See 节 7.3.14 for further

details.

8.2.7 Application Curves

200

160

120

80

15

10

5

40

0

-5

-40

-80

-120

-160

-200

-10

-15

-20

-40°C

-20°C

25°C

65°C

85°C

-40èC

-20èC

25èC

65èC

85èC

25.2

27

28.8 30.6 32.4 34.2

Battery Voltage (V)

36

37.8 39.6

2800 3000 3200 3400 3600 3800 4000 4200 4400

Battery Voltage (mV)

D002

D001

图8-6. V_(Err)Across VIN (0 mA) 9 s

图8-5. V_(Err)Across VIN (0 mA)

25

2

1

0

20

15

10

5

-1

-2

-3

-4

-5

-6

-7

-8

-9

0

-5

-10

-15

-20

-25

-40èC

-20èC

25èC

65èC

85èC

-3000

-2000

-1000

0

Current (mA)

1000

2000

3000

-40

-20

0

20

40

60

80

100

Temperature (èC)

D003

D004

图8-7. I_(Err)

图8-8. T_(Err)

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9 Power Supply Recommendations

Power supply requirements for the BQ34Z100-G1 are simplified due to the presence of the internal LDO voltage

regulation. The REGIN pin accepts any voltage level between 2.7 V and 4.5 V, which is optimum for a single-cell

Li-ion application. For higher battery voltage applications, a simple pre-regulator can be provided to power the

bq34Z100-G1 and any optional LEDs. Decoupling the REGIN pin should be done with a 0.1-µF 10% ceramic

X5R capacitor placed close to the device. While the pre-regulator circuit is not critical, special attention should be

paid to its quiescent current and power dissipation. The input voltage should handle the maximum battery stack

voltage. The output voltage can be centered within the 2.7-V to 4.5-V range as recommended for the REGIN pin.

For high stack count applications, a commercially available LDO is often the best quality solution, but comes with

a cost tradeoff. To lower the BOM cost, the following approaches are recommended.

In 图9-1, Q1 is used to drop the battery stack voltage to roughly 4 V to power the BQ34Z100-G1 REGIN pin and

also to feed the anode of any LEDs used in the application. To avoid unwanted quiescent current consumption,

R1 should be set as high as is practical. It is recommended to use a low-current Zener diode.

From Battery Stack +

R1

Q1

~4 V

D1

5.6 V

To REGIN/LED(s)

图9-1. Q1 Dropping Battery Stack Voltage to 4 V

Alternatively, if the range of a high-voltage battery stack can be well defined, a simple source follower based on

a resistive divider can be used to lower the BOM cost and the quiescent current. For example:

From Battery Stack +

R1

Q1

2.7 V ~ 4.5 V

R2

To REGIN/LED(s)

图9-2. Source Follower on a Resistive Divider

Power dissipation of the linear pre-regulator may become an important design decision when multiple LEDs are

employed in the application. For example, the BQ34Z100-G1 EVM uses a pair of FETs in parallel to

inexpensively dissipate enough power for 10-LED evaluation.

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10 Layout

10.1 Layout Guidelines

10.1.1 Introduction

Attention to layout is critical to the success of any battery management circuit board. The mixture of high-current

paths with an ultralow-current microcontroller creates the potential for design issues that are not always trivial to

solve. Some of the key areas of concern are described in the following sections, and can help to enable

success.

10.1.2 Power Supply Decoupling Capacitor

Power supply decoupling from VCC to ground is important for optimal operation of the gas gauge. To keep the

loop area small, place this capacitor next to the IC and use the shortest possible traces. A large loop area

renders the capacitor useless and forms a small-loop antenna for noise pickup.

Ideally, the traces on each side of the capacitor should be the same length and run in the same direction to avoid

differential noise during ESD. If possible, place a via near the VSS pin to a ground plane layer.

10.1.3 Capacitors

Power supply decoupling for the gas gauges requires a pair of 0.1-µF ceramic capacitors for (BAT) and (VCC)

pins. These should be placed reasonably close to the IC without using long traces back to VSS. The LDO

voltage regulator, whether external or internal to the main IC, requires a 0.47-µF ceramic capacitor to be placed

fairly close to the regulation output pin. This capacitor is for amplifier loop stabilization and as an energy well for

the 2.5-V supply.

10.1.4 Communication Line Protection Components

The 5.6-V Zener diodes, used to protect the communication pins of the gas gauge from ESD, should be located

as close as possible to the pack connector. The grounded end of these Zener diodes should be returned to the

Pack(–) node rather than to the low-current digital ground system. This way, ESD is diverted away from the

sensitive electronics as much as possible.

In some applications, it is sometimes necessary to cause transitions on the communication lines to trigger events

that manage the gas gauge power modes. An example of one of these transitions is detecting a sustained low

logic level on the communication lines to detect that a pack has been removed. Given that most of the gas

gauges do not have internal pulldown networks, it is necessary to add a weak pulldown resistor to accomplish

this when there's an absence of a strong pullup resistor on the system side. If the weak pulldown resistor is

used, it may take less board space to use a small capacitor in parallel instead of the Zener diode to absorb any

ESD transients that are received through communication lines.

10.2 Layout Example

10.2.1 Ground System

The gas gauge requires a low-current ground system separate from the high-current PACK(–) path. ESD

ground is defined along the high-current path from the PACK(–) terminal to low-side protector FETs (if present)

or the sense resistor. It is important that the low-current ground systems only connect to the BAT(–) path at the

sense resistor Kelvin pick-off point. It is recommended to use an optional inner layer ground plane for the low-

current ground system. In 图 10-1, the green is an example of using the low-current ground as a shield for the

gas gauge circuit. Notice how it is kept separate from the high-current ground, which is shown in red. The high-

current path is joined with the low-current path only at one point, shown with the small blue connection between

the two planes.

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图10-1. Differential Filter Component with Symmetrical Layout

10.2.2 Kelvin Connections

Kelvin voltage sensing is very important to accurately measure current and cell voltage. Notice how the

differential connections at the sense resistor do not add any voltage drop across the copper etch that carries the

high current path through the sense resistor. See 图10-1 and 图10-2.

10.2.3 Board Offset Considerations

Although the most important component for board offset reduction is the decoupling capacitor for V_CC, additional

benefit is possible by using this recommended pattern for the coulomb counter differential low-pass filter

network. Maintain the symmetrical placement pattern shown for optimum current offset performance. Use

symmetrical shielded differential traces, if possible, from the sense resistor to the 100-Ω resistors, as shown in

图10-2.

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图10-2. Differential Connection Between SRP and SRN Pins with Sense Resistor

10.2.4 ESD Spark Gap

Protect the communication lines from ESD with a spark gap at the connector. 图 10-3 shows the recommended

pattern with its 0.2-mm spacing between the points.

图10-3. Recommended Spark-Gap Pattern Helps Protect Communication Lines from ESD

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11 Device and Documentation Support

11.1 Documentation Support

For related documentation, see the application report BQ34Z100-G1 High Cell Count and High Capacity

Applications (SLUA760).

11.2 接收文档更新通知

要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新进行注册，即可每周接收产品信息更

改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。

11.3 支持资源

TI E2E^™支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解

答或提出自己的问题可获得所需的快速设计帮助。

链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅

TI 的《使用条款》。

11.4 Trademarks

Impedance Track^™is a trademark of Texas Instruments.

TI E2E^™are trademarks of Texas Instruments.

所有商标均为其各自所有者的财产。

11.5 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

11.6 Glossary

TI Glossary

This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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将这些资源用于研发本资源所述的TI 产品的应用。严禁对这些资源进行其他复制或展示。您无权使用任何其他TI 知识产权或任何第三方知

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TI 提供的产品受TI 的销售条款(https:www.ti.com/legal/termsofsale.html) 或ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI

提供这些资源并不会扩展或以其他方式更改TI 针对TI 产品发布的适用的担保或担保免责声明。重要声明

邮寄地址：Texas Instruments, Post Office Box 655303, Dallas, Texas 75265

PACKAGE MATERIALS INFORMATION

www.ti.com

4-Jan-2022

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

A0

B0

K0

P1

W

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

BQ34Z100PWR-G1

TSSOP

PW

14

2000

330.0

12.4

6.9

5.6

1.6

8.0

12.0

Q1

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

4-Jan-2022

*All dimensions are nominal

Device

Package Type Package Drawing Pins

TSSOP PW 14

SPQ

Length (mm) Width (mm) Height (mm)

338.1 338.1 20.6

BQ34Z100PWR-G1

2000

Pack Materials-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

4-Jan-2022

TUBE

*All dimensions are nominal

Device

Package Name Package Type

PW TSSOP

Pins

SPQ

L (mm)

W (mm)

T (µm)

B (mm)

BQ34Z100PW-G1

14

90

530

10.2

3600

3.5

Pack Materials-Page 3

重要声明和免责声明

TI“按原样”提供技术和可靠性数据（包括数据表）、设计资源（包括参考设计）、应用或其他设计建议、网络工具、安全信息和其他资源，

不保证没有瑕疵且不做出任何明示或暗示的担保，包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担

保。

这些资源可供使用 TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任：(1) 针对您的应用选择合适的 TI 产品，(2) 设计、验

证并测试您的应用，(3) 确保您的应用满足相应标准以及任何其他功能安全、信息安全、监管或其他要求。

这些资源如有变更，恕不另行通知。TI 授权您仅可将这些资源用于研发本资源所述的 TI 产品的应用。严禁对这些资源进行其他复制或展示。

您无权使用任何其他 TI 知识产权或任何第三方知识产权。您应全额赔偿因在这些资源的使用中对 TI 及其代表造成的任何索赔、损害、成

本、损失和债务，TI 对此概不负责。

TI 提供的产品受 TI 的销售条款或 ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI 提供这些资源并不会扩展或以其他方式更改

TI 针对 TI 产品发布的适用的担保或担保免责声明。

TI 反对并拒绝您可能提出的任何其他或不同的条款。IMPORTANT NOTICE

邮寄地址：Texas Instruments, Post Office Box 655303, Dallas, Texas 75265


型号：	BQ34Z100-G1
厂家：	TEXAS INSTRUMENTS
描述：	多化合物 Impedance Track™ 独立电量监测计 \| 电池电量监测计电池
文件：	总66页 (文件大小：2762K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BQ34Z100-G1 [TI]

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