BQ51052BYFPT [TI]
符合 Qi (WPC) 标准的 BQ51052B 集成无线电源锂离子电池充电器接收器 | YFP | 28 | 0 to 125;型号: | BQ51052BYFPT |
厂家: | TEXAS INSTRUMENTS |
描述: | 符合 Qi (WPC) 标准的 BQ51052B 集成无线电源锂离子电池充电器接收器 | YFP | 28 | 0 to 125 电池 PC 无线 |
文件: | 总44页 (文件大小:2165K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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bq51050B, bq51051B, bq51052B
ZHCSAX2F –JULY 2012–REVISED JUNE 2017
符合 Qi v1.2 标准的 bq5105xB 高效无线电源接收器
和电池充电器
1 特性
3 说明
1
•
单级无线电源接收器
和锂离子/锂聚合物电池充电器
bq5105x 器件是符合 Qi 标准的高效无线电源接收器,
具有集成的锂离子/锂聚合物电池充电控制器,可用于
便携式 应用。bq5105xB 器件提供高效交流/直流电源
转换,集成了符合 Qi v1.2 通信协议所需的数字控制
器,并提供了安全高效锂离子和锂聚合物电池充电所需
的所有必需控制算法。通过搭配使用 bq500212A 发送
器侧控制器,bq5105x 可为直接电池充电器解决方案
提供完整的无线电源传输系统。通过使用近场感应式电
力传输,嵌入在便携式器件内的接收器线圈能够接收发
送器线圈所发出的电能。来自接收器线圈的交流信号继
而被整流和调节以将电能直接应用到电池。为了稳定电
能传输过程,建立了接收器到发送器的全局反馈机制。
这个反馈使用 Qi v1.2 通信协议建立。
–
在单个小型封装内将无线电源接收器、整流器和
电池充电器组合在一起
–
–
–
4.20V、4.35V 和 4.40V 输出电压选项
支持高达 1.5A 的充电电流
93% 峰值交流至直流 (AC-DC) 充电效率
•
稳健耐用架构
–
–
–
20V 最大输入电压容差,具有输入过压保护
热关断及过流保护
温度监控和故障检测
•
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符合 WPC v1.2 Qi 行业标准
功率级输出跟踪整流器和电池电压以确保整个充电
周期内的最大效率
bq5105xB 器件在单个封装内集成了低阻抗同步整流
器、低压降稳压器 (LDO)、数字控制、充电器控制器
及精准电压和电流环路。整个功率级(整流器与
LDO)均使用低阻抗 N-MOSFET(100mΩ 常用导通
电阻)以确保高效率与低功耗。
•
采用小型 DSGBA 和 VQFN 封装
2 应用
•
•
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电池组
手机和智能电话
耳机
器件信息(1)
便携式媒体播放器
其他手持式器件
器件型号
bq51050B
bq51051B
bq51052B
封装
VQFN (20)
DSBGA (28)
封装尺寸(标称值)
4.50mm x 3.50mm
3.00mm x 1.90mm
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
典型应用电路原理图
bq5105xB
AD-EN
AD
BAT
CCOMM1
CBOOT1
C4
C3
COMM1
BOOT1
AC1
D1
RECT
C1
R4
TI
TX
COIL
Wireless
Power
Transmitter
RX
COIL
PACK+
C2
NTC
TS/CTRL
AC2
BOOT2
COMM2
ROS
PACK-
CBOOT2
CHG
CCOMM2
CCLAMP2
CCLAMP1
CLAMP2
CLAMP1
ILIM
TERM
EN2
Tri-State
Bi-State
HOST
R5
FOD
PGND
R1
RFOD
Copyright
©
2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLUSB42
bq51050B, bq51051B, bq51052B
ZHCSAX2F –JULY 2012–REVISED JUNE 2017
www.ti.com.cn
目录
8.4 Device Functional Modes........................................ 27
Application and Implementation ........................ 28
9.1 Application Information............................................ 28
9.2 Typical Application .................................................. 28
1
2
3
4
5
6
7
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Device Options....................................................... 4
Pin Configuration and Functions......................... 4
Specifications......................................................... 6
7.1 Absolute Maximum Ratings ...................................... 6
7.2 ESD Ratings.............................................................. 6
7.3 Recommended Operating Conditions....................... 6
7.4 Thermal Information.................................................. 6
7.5 Electrical Characteristics........................................... 7
7.6 Typical Characteristics............................................ 10
Detailed Description ............................................ 13
8.1 Overview ................................................................. 13
8.2 Functional Block Diagram ....................................... 14
8.3 Feature Description................................................. 14
9
10 Power Supply Recommendations ..................... 33
11 Layout................................................................... 33
11.1 Layout Guidelines ................................................. 33
11.2 Layout Example .................................................... 33
12 器件和文档支持 ..................................................... 34
12.1 文档支持................................................................ 34
12.2 相关链接................................................................ 34
12.3 接收文档更新通知 ................................................. 34
12.4 社区资源................................................................ 34
12.5 商标....................................................................... 34
12.6 静电放电警告......................................................... 34
12.7 Glossary................................................................ 34
13 机械、封装和可订购信息....................................... 34
8
4 修订历史记录
注:之前版本的页码可能与当前版本有所不同。
Changes from Revision E (March 2015) to Revision F
Page
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•
•
在整个文档中将所有 Qi v1.1 和 WPC v1.1 更改为 Qi v1.2 和 WPC v1.2 .............................................................................. 1
Added the Adaptive Communication Limit section............................................................................................................... 24
Deleted R1 = 29.402 kΩ R3 = 14.302 kΩ and added a link to SLUS629 in the Internal Temperature Sense (TS
Function of the TS/CTRL Pin) section ................................................................................................................................. 25
Changes from Revision D (January 2014) to Revision E
Page
•
已添加 ESD 额定值表,特性 说明 部分、器件功能模式、应用和实施 部分、电源建议 部分、布局 部分、器件和文档
支持 部分,以及机械、封装和可订购信息 部分...................................................................................................................... 1
已添加 bq51052B 4.40V 选项................................................................................................................................................. 1
Updated pinout images........................................................................................................................................................... 4
Added thermal pad description in Pin Functions table ........................................................................................................... 4
Added AD voltage to Recommended Operating Conditions .................................................................................................. 6
Changed RECT overvoltage specification name from VRECT to VOVP..................................................................................... 7
Changed to ILIM_SHORT, OK from ILIM_SC for clarity...................................................................................................................... 7
Added VOREG for bq51052B .................................................................................................................................................... 8
Added minimum current for KILIM ............................................................................................................................................ 8
Changed KILIM TYP value from 300 to 314 (min / max also changed)................................................................................... 8
Added IBULK spec for charging minimum and maximum......................................................................................................... 8
Added VRECH for bq51052B .................................................................................................................................................... 8
Added new spec ITermination ...................................................................................................................................................... 8
Changed to VTSB from VTS for clarity................................................................................................................................... 8
Changed from ITS-Bias for clarity............................................................................................................................................... 8
Deleted V0C-F as redundant..................................................................................................................................................... 8
Changed typical JEITA regulation on bq51050B from 4.10 V to 4.06 V ................................................................................ 8
Changed to clarify CTRL pin high and low levels................................................................................................................... 8
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•
•
•
•
•
2
版权 © 2012–2017, Texas Instruments Incorporated
bq51050B, bq51051B, bq51052B
www.ti.com.cn
ZHCSAX2F –JULY 2012–REVISED JUNE 2017
•
•
•
•
•
•
•
•
•
•
Changed Thermal shutdown name to TJ-SD for clarity ............................................................................................................ 9
Added section to describe Adapter Enable function............................................................................................................... 9
Changed Synchronous rectifer switchover name to IBAT-SR for clarity..................................................................................... 9
Added synchronous mode entry for bq51052B...................................................................................................................... 9
Deleted note regarding internal junction monitor reducing current - it is not applicable. ..................................................... 19
Added section on modified JEITA profile for bq51052B....................................................................................................... 21
Changed TS/CTRL function to correct Termination Packet value........................................................................................ 22
Added Taper mode completion for Termination Packet....................................................................................................... 22
Changed Beta value from 4500 to 3380 to match NTC datasheet ...................................................................................... 25
Changed received power maximum error from 250 mW to 375 mW to comply with latest WPC v1.2 specification........... 27
Changes from Revision C (February 2013) to Revision D
Page
•
•
•
•
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Changed the ABSOLUTE MAXIMUM RATINGS - moved AC1 and AC2 onto a single row with a Min value of –0.8 ......... 6
Added section: Details of a Qi Wireless Power System and bq5105xB Power Transfer Flow Diagrams............................ 15
Changed text in the Battery Charge Profile section ............................................................................................................. 19
Changed Battery failure Conditions in Table 1..................................................................................................................... 22
Changed Equation 3 and Equation 4 ................................................................................................................................... 25
Changed R2 = 7.81 kΩ To: R1 = 29.402 kΩ ......................................................................................................................... 25
Changed R3 = 13.98 kΩ To: R3 = 14.302 kΩ in the Internal Temperature Sense (TS Function of the TS/CTRL Pin)
section .................................................................................................................................................................................. 25
•
•
Changed THOT = 0°C To: THOT = 60°C.................................................................................................................................. 25
Changed Equation 6............................................................................................................................................................. 29
Changes from Revision B (September 2012) to Revision C
Page
•
完整数据表第一版................................................................................................................................................................... 1
Changes from Revision A (August 2012) to Revision B
Page
•
•
将最后一条 特性 要点由“1.9 x 3.0mm WCSP 和 4.5 x 3.5mm QFN 封装选项”更改为“采用小型 WCSP 和 QFN 封装”......... 1
更改了图表 1 并将标题从:无线充电联盟(WPC 或 Qi)感应充电系统,改为:典型系统方框图显示 bq5105xB 被用
作一个无线电源锂离子/锂聚合物电池充电器 .......................................................................................................................... 1
•
补充说明:如需了解产品详细信息和设计资源,请访问 ti.com/wirelesspower....................................................................... 1
Changes from Original (August 2012) to Revision A
Page
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Changed Regulated BAT(output) voltage............................................................................................................................... 8
Changed Recharge threshold for bq51052B.......................................................................................................................... 8
Deleted ITS-Bias-Max.................................................................................................................................................................... 8
Changed VCOLD to VOC and values ......................................................................................................................................... 8
Changed V45C values.............................................................................................................................................................. 8
Changed V60C values.............................................................................................................................................................. 8
Changed Figure 25............................................................................................................................................................... 21
Changed Figure 25............................................................................................................................................................... 22
Copyright © 2012–2017, Texas Instruments Incorporated
3
bq51050B, bq51051B, bq51052B
ZHCSAX2F –JULY 2012–REVISED JUNE 2017
www.ti.com.cn
5 Device Options
DEVICE
FUNCTION
VRECT-OVP
15 V
VRECT-REG
Track
VBAT-REG
4.20 V
NTC MONITORING
JEITA
bq51050B
bq51051B
bq51052B
4.20-V Li-Ion Wireless Battery Charger
4.35-V Li-Ion Wireless Battery Charger
4.40-V Li-Ion Wireless Battery Charger
15 V
Track
4.35 V
JEITA
15 V
Track
4.40 V
Modified JEITA
6 Pin Configuration and Functions
YFP Package
28-Pin DSBGA
Top View
RHL Package
20-Pin VQFN With Exposed Thermal Pad
Top View
1
2
3
4
A
B
C
D
E
F
PGND
PGND
PGND
PGND
AC1
BOOT1
BAT
2
3
4
5
6
7
8
9
19
18
17
16
15
14
13
12
AC2
AC2
BOOT2
BAT
AC2
RECT
BAT
AC1
RECT
BAT
AC1
BOOT1
BAT
RECT
BOOT2
CLAMP2
COMM2
FOD
Thermal
Pad
CLAMP1
COMM1
CHG
AD-EN
AD
TS/CTRL
ILIM
COMM2
TS/CTRL
ILIM
CLAMP2
FOD
CLAMP1
AD-EN
TERM
COMM1
CHG
The exposed thermal pad should be
connected to ground.
G
EN2
AD
4
Copyright © 2012–2017, Texas Instruments Incorporated
bq51050B, bq51051B, bq51052B
www.ti.com.cn
ZHCSAX2F –JULY 2012–REVISED JUNE 2017
Pin Functions
Pin
DSBGA VQFN
I/O
DESCRIPTION
NAME
AC1
B3, B4
B1, B2
2
I
I
Input power from receiver coil.
Input power from receiver coil.
AC2
19
If AD functionality is used, connect this pin to the wired adapter input. When VAD-Pres is applied to
this pin wireless charging is disabled and AD_ENn is driven low. Connect a 1-µF capacitor from AD
to PGND. If unused, the capacitor is not required and AD should be connected directly to PGND.
AD
G4
9
8
I
AD-EN
F3
D1
D2
D3
D4
C4
C1
F4
E3
O
Push-pull driver for external PFET when wired charging is active. Float if not used.
BAT
4
O
Output pin, delivers power to the battery while applying the internal charger profile.
BOOT1
BOOT2
CHG
3
17
7
O
O
O
O
Bootstrap capacitors for driving the high-side FETs of the synchronous rectifier. Connect a 10-nF
ceramic capacitor from BOOT1 to AC1 and from BOOT2 to AC2.
Open-drain output – active when BAT is enabled. Float if not used.
CLAMP1
5
Open-drain FETs which are used for a non-power dissipative overvoltage AC clamp protection.
When the RECT voltage goes above 15 V, both switches will be turned on and the capacitors will
act as a low impedance to protect the device from damage. If used, capacitors are used to connect
CLAMP1 to AC1 and CLAMP2 to AC2. Recommended connections are 0.47-µF capacitors.
CLAMP2
COMM1
COMM2
E2
E4
E1
16
6
O
O
O
Open-drain outputs used to communicate with primary by varying reflected impedance. Connect a
capacitor from COMM1 to AC1 and a capacitor from COMM2 to AC2 for capacitive load modulation.
For resistive modulation connect COMM1 and COMM2 to RECT through a single resistor. See
Communication Modulator for more information.
15
Used to set priority between wireless power and wired power. EN2 low enables wired charging
source if AD input voltage is present. EN2 high disables wired charging source and wireless power
is enabled if present.
EN2
FOD
ILIM
G2
F2
G1
11
14
12
I
I
Input for the rectified power measurement. See WPC v1.2 Compatibility for details.
Programming pin for the battery charge current. The total resistance from ILIM to PGND (RILIM) sets
I/O the charge current. Figure 32 shows RILIM to be R1 + RFOD. Details can be found in Electrical
Characteristics and Battery Charge Current Setting Calculations.
A1
A2
A3
A4
PGND
1, 20
–
Power ground
Filter capacitor for the internal synchronous rectifier. Connect a ceramic capacitor to PGND.
Depending on the power levels, the value may be from 4.7 μF to 22 μF.
RECT
TERM
C2, C3
18
10
O
I
Input that is used to set the termination threshold. Termination current is the battery current level
below which the charge process will cease. The termination current is set as a percentage of the
charge current. See Battery Charge Current Setting Calculations for more details.
G3
Temperature Sense (TS) and Control (CTRL) pin functionality. For the TS functionality connect
TS/CTRL to ground through a Negative Temperature Coefficient (NTC) resistor. If an NTC function
is not desired, connect to PGND with a 10-kΩ resistor. As a CTRL pin pull low to send end power
transfer (EPT) fault to the transmitter or pull up to an internal rail to send EPT termination to the
transmitter. See Internal Temperature Sense (TS Function of the TS/CTRL Pin) for more details.
TS/CTRL
—
F1
—
13
I
PAD
—
The exposed thermal pad should be connected to ground (PGND).
Copyright © 2012–2017, Texas Instruments Incorporated
5
bq51050B, bq51051B, bq51052B
ZHCSAX2F –JULY 2012–REVISED JUNE 2017
www.ti.com.cn
7 Specifications
7.1 Absolute Maximum Ratings(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN
–0.3
–0.8
–0.3
–0.3
–0.3
MAX
UNIT
RECT, COMM1, COMM2, BAT, CHG, CLAMP1, CLAMP2
AC1, AC2
20
20
30
26
7
V
V
Input voltage
AD, AD-EN
V
BOOT1, BOOT2
V
EN2, TERM, FOD, TS/CTRL, ILIM
V
A(RMS)
A
Input current
AC1, AC2
BAT
2
Output current
1.5
15
1.0
150
150
CHG
mA
A
Output sink current
COMM1, COMM2
Junction temperature, TJ
Storage temperature, Tstg
–40
–65
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to the VSS terminal, unless otherwise noted.
7.2 ESD Ratings
VALUE
±2000
±500
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
V(ESD)
Electrostatic discharge
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
4
MAX UNIT
VIN
IIN
Input voltage range
Input current
RECT
10
1.5
1.5
0.8
15
V
A
Internal Rectifier (voltage monitored at RECT node)
bq51050B, bq51051B
bq51052B
IBAT
BAT(output) current
BAT
A
VAD
Adapter voltage
Sink current
AD
V
IAD-EN
ICOMM
TJ
AD-EN
COMM
1
mA
mA
°C
COMM sink current
Junction temperature
500
125
0
7.4 Thermal Information
bq51050B, bq51051B, bq51052B
THERMAL METRIC(1)
YFP (DSGBA)
RHL (VQFN)
20 PINS
37.7
UNIT
28 PINS
58.9
0.2
RθJA
RθJC(top)
RθJB
ψJT
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
35.5
9.1
13.6
Junction-to-top characterization parameter
Junction-to-board characterization parameter
1.4
0.5
ψJB
8.9
13.5
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6
Copyright © 2012–2017, Texas Instruments Incorporated
bq51050B, bq51051B, bq51052B
www.ti.com.cn
ZHCSAX2F –JULY 2012–REVISED JUNE 2017
Thermal Information (continued)
bq51050B, bq51051B, bq51052B
THERMAL METRIC(1)
YFP (DSGBA)
28 PINS
n/a
RHL (VQFN)
20 PINS
2.7
UNIT
RθJC(bot)
Junction-to-case (bottom) thermal resistance
°C/W
7.5 Electrical Characteristics
Over junction temperature range 0°C ≤ TJ ≤ 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
VUVLO
Undervoltage lockout
VRECT: 0 V → 3 V
2.6
2.7
2.8
V
mV
V
VHYS-UVLO
VOVP
VHYS-OVP
Hysteresis on UVLO
VRECT: 3 V → 2 V
VRECT: 5 V → 16 V
VRECT: 16 V → 5 V
250
15
Input overvoltage threshold
Hysteresis on OVP
14.5
15.5
150
5.11
mV
V
(1)
VRECT-REG
VRECT regulation voltage
ILOAD Hysteresis for dynamic VRECT thresholds as a %
of IILIM
ILOAD
ILOAD falling
5%
300
8.3
3.1
VBAT = 3.5 V,
VTRACK
Tracking VRECT regulation above VBAT
mV
V
IBAT ≥ 500 mA
VRECT-REV = VBAT – VRECT
VBAT = 10 V
,
VRECT-REV
VRECT-DPM
Rectifier reverse voltage protection at the BAT(output)
9
Rectifier undervoltage protection, restricts IBAT at
VRECT-DPM
3
3.2
V
QUIESCENT CURRENT
IBAT = 0 mA, 0°C ≤ TJ ≤ 85°C
IBAT = 300 mA, 0°C ≤ TJ ≤ 85°C
8
2
10
3
mA
mA
Active chip quiescent current consumption from RECT
(when wireless power is present)
IRECT
Quiescent current at the BAT when wireless power is
disabled (Standby)
IQ
VBAT = 4.2 V, 0°C ≤ TJ ≤ 85°C
12
20
µA
ILIM SHORT PROTECTION
bq51050B,
bq51051B
Highest value of ILIM resistor considered a fault
(short).
Monitored for IBAT > ILIM_SHORT, OK
RILIM: 200 Ω → 50 Ω. IBAT
latches off, cycle power to
reset
120
235
RILIM-SHORT
Ω
bq51052B
tDGL-Short
Deglitch time transition from ILIM short to IBAT disable
1
145
75
ms
mA
bq51050B,
bq51051B
110
55
165
95
ILIM_SHORT,
ILIM-SHORT,OK enables the IILIM short comparator when
IBAT is greater than this value
IBAT: 0 mA → 200 mA
IBAT: 200 mA → 0 mA
OK
bq51052B
ILIM-SHORT,
Hysteresis for ILIM-SHORT,OK comparator
Maximum output current limit
30
mA
A
OK
HYSTERESIS
Maximum IBAT that will be delivered for up
to 1 ms when ILIM is shorted to PGND
IBAT-CL
2.4
BATTERY SHORT PROTECTION
VBAT(SC)
BAT pin short-circuit detection/precharge threshold
VBAT: 3 V → 0.5 V, no deglitch
VBAT: 0.5 V → 3 V
bq51050B,
0.75
0.8
0.85
V
VBAT(SC)-HYS VBAT(SC) hysteresis
100
mV
12
12
18
18
22
25
Source current to BAT pin during short-circuit
detection
bq51051B
IBAT(SC)
VBAT = 0 V
mA
mA
bq51052B
VOLTAGE REGULATION PHASE
bq51050B,
0.35 *
IBULK
bq51051B
IBAT threshold during Voltge Regulation Phase that
changes VRECT level from VBAT+VTRACK to VRECT-REG
IEndTrack
IBAT decreasing
0.05 *
IBULK
bq51052B
(1) VRECT-REG is overridden when rectifier foldback mode is active (VRECT-REG-VTRACK).
Copyright © 2012–2017, Texas Instruments Incorporated
7
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Electrical Characteristics (continued)
Over junction temperature range 0°C ≤ TJ ≤ 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
PRECHARGE
VLOWV
Precharge to fast charge transition threshold
VBAT: 2 V → 4 V
2.9
3.0
3.1
V
VLOWV > VBAT > VBAT(SC)
IBAT: 50 mA – 300 mA
Precharge current as a percentage of the programmed
KPRECHG
18%
20%
23%
charge current setting (IBULK
IBAT during precharge
Precharge time-out
)
IPRECHG
VLOWV > VBAT > VBAT(SC), IBULK = 500 mA
VBAT(SC) < VBAT < VLOWV
100
30
mA
min
ms
ms
tprecharge
tDGL1(LOWV)
tDGL2(LOWV)
OUTPUT
Deglitch time, pre- to fast-charge
Deglitch time, fast- to precharge
25
25
bq51050B
4.16
4.30
4.36
4.20
4.35
4.40
110
4.22
VOREG
Regulated BAT(output) voltage
Drop-out voltage, RECT to BAT
IBAT = 1000 mA
IBAT = 1 A
bq51051B
bq51052B
4.37
4.44
190
V
VDO
mV
RLIM = KILIM / IIBULK (500
mA - 1.5 A)
bq51050B,
bq51051B
KILIM
Current programming factor
Battery charging current limits
303
314
321
AΩ
RLIM = KILIM / IIBULK (500
mA - 1.0 A)
bq51052B
bq51050B,
bq51051B
500
500
1,500
1,000
IBULK
KILIM 303 to 321
mA
bq51052B
tfast-charge
IBAT-R
Fast-charge timer
VLOWV < VBAT < VBAT-REG
10
hours
mA
Battery charge current limit programming range
Current limit during communication
1500
420
ICOMM-CL
330
200
390
mA
TERMINATION
Programmable termination current as a percentage of
IIBULK
KTERM
ITERM-Th
ITERM
RTERM = %IIBULK x KTERM (IBULK = 500 mA)
240
100
50
280
55
Ω/%
mA
µA
Termination current from BAT, defined with KTERM, as IBAT decreasing, RTERM = 2.4k Ω, IBULK
the current that terminates the charge cycle
=
1000 mA
Constant current at the TERM pin to bias the
termination reference
40
VBAT-REG VBAT-REG VBAT-REG
–135mV –110mV –90mV
bq51050B
bq51051B
bq51052B
V
VBAT-REG VBAT-REG VBAT-REG
–125mV –95mV –70mV
VRECH
Recharge threshold
VBAT-REG VBAT-REG VBAT-REG
–125mV
–95mV
–70mV
ITermination
Termination current setting limits
120
mA
V
TS / CTRL FUNCTIONALITY
ITSB< 100 µA (periodically
Internal TS bias voltage (VTS is the voltage at the
TS/CTRL pin, VTSB is the internal bias voltage)
VTSB
2
2.2
2.4
driven see tTS/CTRL-Meas
VTS: 50% → 60%
VTS: 60% → 50%
VTS: 40% → 50%
VTS: 50% → 40%
VTS: 25% → 15%
VTS: 15% → 25%
VTS: 20% → 5%
VTS: 5% → 20%
)
V0C-R
Rising threshold
57
58.7
2.4
47.8
2
60 %VTSB
%VTSB
V0C-Hyst
V10C
V10C-Hyst
V45C
V45C-Hyst
V60C
Hysteresis on 0°C Comparator
Rising threshold
46
18
12
49 %VTSB
%VTSB
Hysteresis on 10°C Comparator
Falling threshold
19.6
3
21 %VTSB
%VTSB
Hysteresis on 45°C Comparator
Falling threshold
13.1
1
14 %VTSB
%VTSB
V60C-Hyst
Hysteresis on 60°C Comparator
IBULK reduction percentage at 45°C (in full JEITA mode
- N/A for bq51052B)
I45C
VTS: 25% → 15%, IBAT = IBULK
45%
50%
55%
bq51050B
bq51051B
bq51052B
4.06
4.2
VO-J
Voltage regulation during JEITA temperature range
Voltage on CTRL pin for a high
V
V
4.2
VCTRL-HI
0.2
5
8
Copyright © 2012–2017, Texas Instruments Incorporated
bq51050B, bq51051B, bq51052B
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ZHCSAX2F –JULY 2012–REVISED JUNE 2017
Electrical Characteristics (continued)
Over junction temperature range 0°C ≤ TJ ≤ 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
VCTRL-LOW
tTS/CTRL-Meas
tTS-Deglitch
Voltage on CTRL pin for a low
0
0.1
V
Time period of TS/CTRL measurements (when VTSB is TS bias voltage is only driven when
being driven internally)
24
10
20
ms
ms
kΩ
communication packets are sent
Deglitch time for all TS comparators
Pullup resistor for the NTC network. Pulled up to the
TS bias LDO.
NTC-Pullup
18
22
Nominal resistance requirement at 25°C of the NTC
resistor
NTC-RNOM
NTC-Beta
10
kΩ
Beta requirement for accurate temperature sensing
through the above specified thresholds
3380
Ω
THERMAL PROTECTION
TJ-SD
Thermal shutdown temperature
Thermal shutdown hysteresis
155
20
°C
°C
TJ-Hys
OUTPUT LOGIC LEVELS ON CHG
VOL
Open-drain CHG pin
ISINK = 5 mA
500
1
mV
µA
VCHG = 20 V,
0°C ≤ TJ ≤ 85°C
IOFF,CHG
CHG leakage current when disabled
COMM PIN
RDS-
COMM1 and COMM2
VRECT = 2.6 V
1
2
Ω
ON(COMM)
fCOMM
Signaling frequency on COMM pin
COMM pin leakage current
kb/s
µA
VCOMM1 = 20 V,
VCOMM2 = 20 V
IOFF,COMM
1
CLAMP PIN
RDS-
CLAMP1 and CLAMP2
0.75
Ω
ON(CLAMP)
ADAPTER ENABLE
VAD-Pres
VAD-PresH
IAD
VAD Rising threshold voltage. EN-UVLO
VAD 0 V → 5 V
3.5
3.6
3.8
V
VAD-Pres hysteresis, EN-HYS
Input leakage current
VAD 5 V → 0 V
400
mV
µA
VRECT = 0 V, VAD = 5 V
60
Pullup resistance from AD-EN to BAT when adapter
mode is disabled and VBAT > VAD, EN-OUT
RAD
VAD = 0 V, VBAT = 5 V
200
4.5
350
Ω
Voltage difference between VAD and VAD-EN when
adapter mode is enabled, EN-ON
VAD-Diff
VAD = 5 V, 0°C ≤ TJ ≤ 85°C
3
5
V
SYNCHRONOUS RECTIFIER
bq51050B,
bq51051B
80
20
115
50
140
65
IBAT at which the synchronous rectifier enters half
synchronous mode, SYNC_EN
IBAT-SR
IBAT 200 mA → 0 mA
bq51052B
mA
V
bq51050B,
bq51051B
25
IBAT-SRH
Hysteresis for IBAT,SR (full-synchronous mode enabled) IBAT 0 mA → 200 mA
bq51052B
28
High-side diode drop when the rectifier is in half
synchronous mode
VHS-DIODE
IAC-VRECT = 250 mA, and TJ = 25°C
0.7
EN2
VIL
Input low threshold for EN2
Input high threshold for EN2
EN2 pulldown resistance
0.4
V
V
VIH
1.3
RPD, EN
ADC
200
kΩ
0 W – 5 W received power after calibration
of Rx magnetics losses
PowerREC
Received power measurement
0.25
W
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7.6 Typical Characteristics
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
Pre-charge & fast charge mode
Taper mode
0
1
2
3
4
5
0.00
1.00
2.00
3.00
4.00
5.00
Output Power (W)
Figure 1. Rectifier Efficiency
Output Power (W)
Figure 2. IC Efficiency (AC Input to DC Output)
5.50
5.00
4.50
4.00
3.50
3.00
2.50
2.00
1.50
6.0
5.0
4.0
3.0
Vrect
Vbat
Pre-charge & fast charge mode
2.0
Taper mode
Precharge & fast charge mode
Taper mode
RILIM=600W
1.0
0.00
0.20
0.40
Output Current (A)
Figure 3. VRECT, VBAT versus Output Current
0.60
0.80
1.00
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Output Current (A)
Figure 4. VRECT versus Output Current at RILIM=600 Ω (ILIM
=
523 mA)
0.008
70
Pre-charge & fast charge mode
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
Taper mode
60
50
40
30
20
10
0
0.2
0.4
Output Current (A)
Figure 5. Output Ripple versus Output Current
0.6
0.8
1
1.2
0
1
2
3
4
Output Power (W)
Figure 6. System Efficiency (DC Input to DC Output)
10
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ZHCSAX2F –JULY 2012–REVISED JUNE 2017
Typical Characteristics (continued)
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0
3
3.3
3.6
3.9
4.2
4.5
0
0.06
0.12
0.18
0.24
0.3
VBAT (V)
IBAT during Taper Mode (A)
D001
D001
Figure 7. bq51052B 300-mA Fast Charge Efficiency (DC
Input to DC Output)
Figure 8. bq51052B 300-mA Taper Charge Efficiency (DC
Input to DC Output)
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0
3
3.3
3.6
3.9
4.2
4.5
0
0.2
0.4
0.6
0.8
1
VBAT (V)
IBAT during Taper Mode (A)
D001
D001
Figure 9. bq51052B 800-mA Fast Charge Efficiency (DC
Input to DC Output)
Figure 10. bq51052B 800-mA Taper Charge Efficiency (DC
Input to DC Output)
VRECT
VRECT
VBAT
VBAT
IBAT
IBAT
Figure 11. Battery Insertion in Precharge Mode
Figure 12. Battery Insertion in Fast-Charge Mode
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Typical Characteristics (continued)
VRECT
VRECT
VTS/CTRL
VTS/CTRL
VBAT
VBAT
IBAT
IBAT
Figure 13. TS Fault
Figure 14. TS Ground Fault
VTS/CTRL
VRECT
VRECT
VBAT
IBAT
VBAT
IBAT
Figure 16. JEITA Functionality (Rising Temp) -
bq51050B/bq51051B
Figure 15. Precharge to Fast-Charge Transition
VRECT
VRECT
VTS/CTRL
VBAT
IBAT
VBAT
IBAT
Figure 18. Battery Short to Precharge Mode Transition
Figure 17. JEITA Functionality (Falling Temp) -
bq51050B/bq51051B
12
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ZHCSAX2F –JULY 2012–REVISED JUNE 2017
8 Detailed Description
8.1 Overview
8.1.1 A Brief Description of the Wireless System
A wireless system consists of a charging pad (primary, transmitter) and the secondary-side equipment. There are
coils in the charging pad and in the secondary equipment which magnetically couple to each other when the
equipment is placed on the charging pad. Power is transferred from the primary to the secondary by transformer
action between the coils. Control over the amount of power transferred is achieved by changing the frequency of
the primary drive.
The secondary can communicate with the primary by changing the load seen by the primary. This load variation
results in a change in the primary coil current, which is measured and interpreted by a processor in the charging
pad. The communication is digital - packets are transferred from the secondary to the primary. Differential bi-
phase encoding is used for the packets. The rate is 2-kbps.
Various types of communication packets have been defined. These include identification and authentication
packets, error packets, control packets, power usage packets, end of power packet and efficiency packets.
The primary coil is powered off most of the time. It wakes up occasionally to see if a secondary is present. If a
secondary authenticates itself to the primary, the primary remains powered up. The secondary maintains full
control over the power transfer using communication packets.
Power
bq5105x
Voltage/
Current
Conditioning
System
AC to DC
Drivers
Rectification
Communication
LI-Ion
Battery
Battery
Charger
Controller
V/I
Sense
Controller
bq500210
Transmitter
Receiver
Figure 19. WPC Wireless Power Charging System Indicating the Functional Integration of the bq5105x
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8.2 Functional Block Diagram
RECT
I
BAT
VOUT,FB
VREF,ILIM
VILIM
_
+
_
+ VOUT,REG
VREF,IABS
VIABS,FB
+
_
ILIM
VIN,FB
+
_
VIN,DPM
AD
+
_
VREFAD,OVP
BOOT2
BOOT1
_
+
VREFAD,UVLO
AD-EN
FOD
AC1
AC2
Sync
Rectifier
Control
VREF,TS-BIAS
VFOD
+
_
COMM1
COMM2
+
_
TS_0
VBG,REF
VIN,FB
VOUT,FB
VILIM
TS_10
+
_
DATA_
OUT
VIABS,FB
TS_45
TS_60
ADC
+
_
TS/CTRL
CLAMP1
CLAMP2
VIABS,REF
VIC,TEMP
VFOD
+
_
Digital Control
and Charger
+
_
TS_DETECT
VREF_100MV
50µ A
VRECT
VOVP,REF
+
_
OVP
+
_
CHG
TERM
TERM
EN2
ILIM
200kW
PGND
Copyright
© 2016, Texas Instruments Incorporated
8.3 Feature Description
8.3.1 Using the bq5105x as a Wireless Li-Ion/Li-Pol Battery Charger (With Reference to Functional Block
Diagram)
Functional Block Diagram is the schematic of a system which uses the bq5105x as a direct battery charger.
When the system shown in Functional Block Diagram is placed on the charging pad (transmitter), the receiver
coil couples to the magnetic flux generated by the coil in the charging pad which consequently induces a voltage
in the receiver coil. The internal synchronous rectifier feeds this voltage to the RECT pin which has the filter
capacitor C3.
14
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bq51050B, bq51051B, bq51052B
www.ti.com.cn
ZHCSAX2F –JULY 2012–REVISED JUNE 2017
Feature Description (continued)
The bq5105x identifies and authenticates itself to the primary using the COMM pins by switching on and off the
COMM FETs and hence switching in and out CCOMM. If the authentication is successful, the transmitter will
remain powered on. The bq5105x measures the voltage at the RECT pin, calculates the difference between the
actual voltage and the desired voltage VRECT-REG and sends back error packets to the primary. This process goes
on until the RECT voltage settles at VRECT-REG
.
During power-up, the LDO is held off until the VRECT-REG threshold converges. The voltage control loop ensures
that the output (BAT) voltage is maintained at VBAT-REG. The values of VBAT and VRECT are dependant on the
battery charge mode. The bq5105x continues to monitor the VRECT and VBAT and sends error packets to the
primary every 250 ms. The bq5105x regulates the VRECT voltage very close to battery voltage, this voltage
tracking process minimizes the voltage difference across the internal LDO and maximizes the charging efficiency.
If a large transient occurs, the feedback to the primary speeds up to every 32 ms in order to converge on an
operating point in less time.
8.3.2 Details of a Qi Wireless Power System and bq5105xB Power Transfer Flow Diagrams
The bq5105xB integrates a fully compliant WPC v1.2 communication algorithm in order to streamline receiver
designs (no extra software development required). Other unique algorithms such as Dynamic Rectifier Control
are also integrated to provide best-in-class system performance. This section provides a high level overview of
these features by illustrating the wireless power transfer flow diagram from start-up to active operation.
During start-up operation, the wireless power receiver must comply with proper handshaking to be granted a
power contract from the TX. The TX will initiate the handshake by providing an extended digital ping. If an RX is
present on the TX surface, the RX will then provide the signal strength, configuration and identification packets to
the TX (see volume 1 of the WPC specification for details on each packet). These are the first three packets sent
to the TX. The only exception is if there is a shutdown condition on the EN1/EN2, AD, or TS/CTRL pins where
the Rx will shut down the TX immediately. Once the TX has successfully received the signal strength,
configuration and identification packets, the RX will be granted a power contract and is then allowed to control
the operating point of the power transfer. With the use of the bq5105xB Dynamic Rectifier Control algorithm, the
RX will inform the TX to adjust the rectifier voltage above 5 V before enabling the output supply. This method
enhances the transient performance during system start-up. See Figure 20 for the start-up flow diagram details.
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ZHCSAX2F –JULY 2012–REVISED JUNE 2017
www.ti.com.cn
Feature Description (continued)
Çó towered
wiꢀhouꢀ ꢁó
!cꢀive
Çó 9xꢀended 5igiꢀal ting
{end 9tÇ packeꢀ wiꢀh
reason value
9ꢂ2ꢄ!5ꢄÇ{ꢄ/Çꢁ[ 9tÇ
/ondiꢀion?
ò9{
ꢂꢃ
Ldenꢀificaꢀion &
/onfiguraꢀion & {{, ꢁeceived
by Çó?
ꢂꢃ
ò9{
tower /onꢀracꢀ 9sꢀablished.
!ll proceeding conꢀrol is
dicꢀaꢀed by ꢀhe ꢁó.
{end conꢀrol error packeꢀ ꢀo
increase ëꢁ9/Ç
ëꢁ9/Ç < ëꢁ9/Ç-ꢁ9D
?
ò9{
ꢂꢃ
{ꢀarꢀup operaꢀing poinꢀ
esꢀablished. 9nable ꢀhe ꢁó
ouꢀpuꢀ.
ꢁó !cꢀive tower
Çransfer {ꢀage
Figure 20. Wireless Power Start-up Flow Diagram
16
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ZHCSAX2F –JULY 2012–REVISED JUNE 2017
Feature Description (continued)
Once the start-up procedure has been established, the RX will enter the active power transfer stage. This is
considered the “main loop” of operation. The Dynamic Rectifier Control algorithm will determine the rectifier
voltage target based on a percentage of the maximum output current level setting (set by KILIM and the IILIM
resistance to PGND). The RX will send control error packets in order to converge on these targets. As the output
current changes, the rectifier voltage target will dynamically change. As a note, the feedback loop of the WPC
system is relatively slow where it can take up to 90 ms to converge on a new rectifier voltage target. It should be
understood that the instantaneous transient response of the system is open loop and dependent on the RX coil
output impedance at that operating point. More details on this will be covered in the section Receiver Coil Load-
Line Analysis. The “main loop” will also determine if any conditions are true and will then discontinue the power
transfer. Figure 21 shows the active power transfer loop.
wó !ctive ꢁoꢀer
Çransfer {tage
wó {hutdoꢀn
conditions per
the 9ꢁÇ Çable?
Çó ꢁoꢀered
ꢀithout wó
!ctive
{end 9ꢁÇ packet ꢀith
reason value
ò9{
ò9{
ò9{
bh
ë.!Ç < ë[ꢂíë
bh
ëw9/Ç target = ëw9/Ç-w9D
{end control error packets
to convergeꢃ
ꢃ
ëw9/Ç target = ë.!Ç + ëÇw!/Y
{end control error packets
to convergeꢃ
ꢃ
L.!Ç > Yꢁw9/ID% of L.Ü[Y
?
bh
ëw9/Ç target = ëw9/Ç-w9D
ꢃ
{end control error packets
to convergeꢃ
ꢄeasure wectified ꢁoꢀer
and {end ëalue to Çó
Ç9wꢄ {Ç!Ç9
Figure 21. Active Power Transfer Flow Diagram
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Feature Description (continued)
tower
Çransfer
{end 9tÇ /harge
/ompleꢂe
ë.!Ç > ëꢁ9/I
?
ò9{
ëL[Lꢀ < ëÇ9ꢁꢀ
?
ò9{
bh
bh
ëꢁ9/Ç Çargeꢂ = ëꢁ9/Ç-ꢁ9D
L.!Ç = L.!Ç({/)
ë.!Ç < ë.!Ç({/)
ò9{
bh
ëꢁ9/Ç Çargeꢂ = ëꢁ9/Ç-ꢁ9D
LꢃÜÇ = Ltꢁ9/ID
ë.!Ç({/) < ë.!Ç < ë[ꢃíë
ò9{
ò9{
ò9{
bh
ë[ꢃíë < ë.!Ç < ëꢃꢁ9D
bh
bh
ëꢁ9/Ç Çargeꢂ = ë.!Ç + ëÇꢁ!/Y
L.!Ç = L.Ü[Y
L.!Ç < L9ndÇrack
?
ëꢁ9/Ç Çargeꢂ = ëꢁ9/Ç-ꢁ9D
bh
!5 ꢄ Ç{ꢄ/Çꢁ[
9tÇ /ondiꢂion?
ò9{
{end 9tÇ
Figure 22. TERM STATE Flow Diagram of bq5105XB
18
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ZHCSAX2F –JULY 2012–REVISED JUNE 2017
Feature Description (continued)
8.3.3 Battery Charge Profile
The battery is charged in three phases: precharge, fast-charge constant current and constant voltage. A voltage-
based battery pack thermistor monitoring input (TS function of the TS/CTRL pin) is included that monitors battery
temperature for safe charging. The TS function for bq51050B and bq51051B is JEITA compatible. The TS
function for the bq51052B modifies the current regulation differently than standard JEITA. See Battery-Charger
Safety and JEITA Guidelines for more details.
The rectifier voltage follows BAT voltage plus VTRACK for any battery voltage above VLOWV to full regulation
voltage and most of the taper charging phase. If the battery voltage is below VLOWV the rectifier voltage increases
to VRECT-REG
.
If IBAT is less than IEndTrack (a percentage of IBULK) during taper mode, the rectifier voltage increases to VRECT-REG
.
The charge profile for the bq51050B and bq51051B is shown in Figure 23 while the bq51052B is shown in
Figure 24.
tre-charge
thase
/urrenꢀ wegulaꢀion thase
ëolꢀage wegulaꢀion thase
ëw9/Ç-w9D
ëw9/Ç = ë.!Ç + ëÇw!/Y
ëw9/Ç = ëw9/Ç-w9D
ëw9/Ç = ëw9/Ç-w9D
ëꢁw9D
L.!Ç = L.Ü[Y
ë.!Ç = ëꢁw9D
L.ulk
ëw9/Ç
=
ë.!Ç + ëÇw!/Y
ë.!Ç
ë[ꢁíë
ë.!Ç({/)
ë.!Ç
L9ndÇrack
L.!Ç = Çaper
LÇ9wꢂ-Çh
Ltw9/ID
L.!Ç({/)
L.!Ç
L.!Ç = ꢁff
9xits
ëw9/Ç-Çw!/Y
ëw9/Ç-w9D
ëw9/Ç-Çw!/Y
Çó hff
Figure 23. bq51050B and bq51051B Li-Ion Battery Charge Profile
tre-charge
thase
/urrenꢀ wegulaꢀion thase
L.!Ç = L.Ü[Y
ëolꢀage wegulaꢀion thase
ëw9/Ç = ë.!Ç + ëÇw!/Y
ëw9/Ç-w9D
ëꢁw9D
ëw9/Ç = ëw9/Ç-w9D
ë.!Ç = ëꢁw9D
L.ulk
ëw9/Ç
=
ë.!Ç + ëÇw!/Y
ë.!Ç
ë[ꢁíë
ë.!Ç({/)
ë.!Ç
L.!Ç = Çaper
LÇ9wꢂ-Çh
Ltw9/ID
L.!Ç({/)
L.!Ç
L.!Ç = ꢁff
ëw9/Ç-w9D
ëw9/Ç-Çw!/Y
Çó hff
Figure 24. bq51052B Li-Ion Battery Charge Profile
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Feature Description (continued)
8.3.4 Battery Charging Process
8.3.4.1 Precharge Mode (VBAT ≤ VLOWV
)
The bq5105X enters precharge mode when VBAT ≤ VLOWV. Upon entering precharge mode, battery charge
current limit is set to IPRECHG. During precharge mode, the charge current is regulated to KPRECHG percent of the
fast charge current (IBULK) setting. For example, if IBULK is set to 800 mA, then the precharge current would
have a typical value of 160 mA.
If the battery is deeply discharged or shorted (VBAT < VBAT(SC)), the bq5105X applies IBAT(SC) current to bring the
battery voltage up to acceptable charging levels. Once the battery rises above VBAT(SC), the charge current is
regulated to IPRECHG
.
Under normal conditions, the time spent in this precharge region is a very short percentage of the total charging
time and this does not affect the overall charging efficiency for very long.
8.3.4.2 Fast Charge Mode / Constant Voltage Mode
Once VBAT > VLOWV, the bq5105x enters fast charge mode (Current Regulation Phase) where charge current is
regulated using the internal MOSFETs between RECT and BAT. Once the battery voltage charges up to VBAT-
REG, the bq5105x enters constant voltage (CV) phase and regulates battery voltage to VOREG and the charging
current is reduced.
Once IBAT falls below the termination threshold (ITERM-Th), the charger sends an EPT (Charge Complete)
notification to the TX and enters high impedance mode.
8.3.4.3 Battery Charge Current Setting Calculations
8.3.4.3.1 RILIM Calculations
The bq5105x includes a means of providing hardware overcurrent protection by means of an analog current
regulation loop. The hardware current limit provides an extra level of safety by clamping the maximum allowable
output current (for example, a current compliance). The calculation for the total RILIM resistance is as follows:
YL[La
YL[La
w1 =
t wCh5
wL[La = w1 + wCh5
L.Ü[Y =
L
w
(1)
Where IBULK is the programmed battery charge current during fast charge mode. When referring to the application
diagram shown in Figure 32, RILIM is the sum of RFOD and R1 (the total resistance from the ILIM pin to PGND).
8.3.4.3.2 Termination Calculations
The bq5105X includes a programmable upper termination threshold. The upper termination threshold is
calculated using Equation 2:
wÇ9wa
Y
wÇ9wa = YÇ9wa * %L.Ü[Y
%L.Ü[Y =
(2)
The KTERM constant is specified in Electrical Characteristics as 240 Ω/%. The upper termination threshold is set
as a percentage of the charge current setting (IBULK).
For example, if RILIM is set to 314 Ω, IBULK will be 1 A (314 ÷ 314). If the upper termination threshold is desired to
be 100 mA, this would be 10% of IBULK. The RTERM resistor would then equal 2.4 kΩ (240 × 10).
Termination can be disabled by floating the TERM pin. If the TERM pin is grounded the termination function is
effectively disabled. However, due to offsets of internal comparators, termination may occur at low battery
currents.
20
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Feature Description (continued)
8.3.4.4 Battery-Charger Safety and JEITA Guidelines
The bq5105x continuously monitors battery temperature by measuring the voltage between the TS/CTRL pin and
PGND. A negative temperature coefficient thermistor (NTC) and an external voltage divider typically develop this
voltage. The bq5105x compares this voltage against its internal thresholds to determine if charging is allowed. To
initiate a charge cycle, the voltage on TS/CTRL pin (VTS) must be within the VT1 to VT4 thresholds. If VTS is
outside of this range, the bq5105x suspends charge and waits until the battery temperature is within the VT1 to
VT4 range. Additional information on the Temperature Sense function can be found in Internal Temperature
Sense (TS Function of the TS/CTRL Pin).
8.3.4.4.1 bq51050B and bq51051B JEITA
If VTS is within the ranges of VT1 and VT2 or VT3 and VT4, the charge current is reduced to IBULK/2. If VTS is within
the range of VT1 and VT3, the maximum charge voltage regulation is VOREG. If VTS is within the range of VT3 and
VT4, the maximum charge voltage regulation is reduced to "NEW SPEC". Figure 25 summarizes the operation.
/harge /urrent: L.Ü[Y
L.Ü[Y ꢁ 2
L.Ü[Y ꢁ 2
0 !
/harge ëoltage: ëꢀw9D
ëꢀ-W
0 ë
Ç1
(0° /)
Ç2
(10° /)
Ç3
(45° /)
Ç4
(60° /)
Figure 25. JEITA Compatible TS Profile for bq51050B and bq51051B
8.3.4.4.2 bq51052B Modified JEITA
The bq51052B has a modififed JEITA profile. The maximum charge current is not modified between VT1 and VT2
or between VT3 and VT4, it remains at IBULK. The maximum charge voltage is reduced to VO-J when the VTS is
between VT3 and VT4.
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Feature Description (continued)
/harge /urrent: L.Ü[Y
0 !
/harge ëoltage: ëꢀw9D
ëꢀ-W
0 ë
Ç1
(0° /)
Ç2
(10° /)
Ç3
(45° /)
Ç4
(60° /)
Figure 26. JEITA Compatible TS Profile for bq51052B
8.3.4.5 Input Overvoltage
If, for some condition (for example, a change in position of the equipment on the charging pad), the rectifier
voltage suddenly increases in potential, the voltage-control loop inside the bq5105x becomes active, and
prevents the output from going beyond VBAT-REG. The receiver then starts sending back error packets every 32
ms until the RECT voltage comes back to an acceptable level, and then maintains the error communication every
250 ms.
If the input voltage increases in potential beyond VOVP, the device switches off the internal FET and
communicates to the primary to bring the voltage back to VRECT-REG. In addition a proprietary voltage protection
circuit is activated by means of CCLAMP1 and CCLAMP2 that protects the device from voltages beyond the maximum
rating.
8.3.4.6 End Power Transfer Packet (WPC Header 0x02)
The WPC allows for a special command to terminate power transfer from the TX termed End Power Transfer
(EPT) packet. WPC v1.2 specifies the reasons for sending a termination packet and their data field value. In
Table 1, the CONDITION column corresponds to the stimulus causing the bq5105x device to send the
hexidecimal code in the VALUE column.
Table 1. Termination Packets
REASON
VALUE
0x00
0x01
0x02
0x03
0x04
0x05
CONDITION
Unknown
AD > VAD-Pres, TS/CTRL = VCTRL-HI
IBAT falls below ITERM-Th during Taper mode
TJ > 150°C or RILIM < RILIM-SHORT
TS < VHOT, TS > VCOLD, or TS/CTRL < VCTRL-LOW
Not Sent
Charge Complete
Internal Fault
Overtemperature
Overvoltage
Overcurrent
Not Sent
Battery is not coming out of precharge mode after Precharge time-out, or
fast charge time-out has occured.
Battery failure
0x06
Reconfigure
0x07
0x08
Not Sent
No Response
VRECT target does not converge
22
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8.3.4.7 Status Output
The bq5105x provides one status output, CHG. This output is an open-drain NMOS device that is rated to 20 V.
The open-drain FET connected to the CHG pin will be turned on whenever the output (BAT) of the charger is
enabled. As a note, the output of the charger supply will not be enabled if the VRECT-REG does not converge to the
no-load target voltage.
8.3.4.8 Communication Modulator
The bq5105x provides two identical, integrated communication FETs which are connected to the pins COMM1
and COMM2. These FETs are used for modulating the secondary load current which allows bq5105x to
communicate error control and configuration information to the transmitter.There are two methods to implement
load modulation, capacitive and resistive.
Capacitive load modulation is more commonly used. Capacitive load modulation is shown in Figure 27. In this
case, a capacitor is connected from COMM1 to AC1 and from COMM2 to AC2. When the COMM switches are
closed there is effectively a 22 nF capacitor connected between AC1 and AC2. Connecting a capacitor in
between AC1 and AC2 modulates the impedance seen by the coil, which will be reflected to the primary and
interpreted by the controller as a change in current.
AC1
AC2
47 nF
47 nF
COMM1
COMM2
COMM_DRIVE
Figure 27. Capacitive Load Modulation
Figure 28 shows how the COMM pins can be used for resistive load modulation. Each COMM pin can handle at
most a 24 Ω communication resistor. Therefore, if a COMM resistor between 12 Ω and 24 Ω is required, COMM1
and COMM2 pins must be connected in parallel. bq5105x does not support a COMM resistor less than 12 Ω.
RECTIFIER
24 W
24 W
COMM1
COMM2
COMM_DRIVE
Figure 28. Resistive Load Modulation
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8.3.4.9 Adaptive Communication Limit
The Qi communication channel is established through backscatter modulation as described in the previous
sections. This type of modulation takes advantage of the loosely coupled inductor relationship between the RX
and TX coils. Essentially, the switching in-and-out of the communication capacitor or resistor adds a transient
load to the RX coil in order to modulate the TX coil voltage and current waveform (amplitude modulation). The
consequence of this technique is that a load transient (load current noise) from the mobile device has the same
signature. To provide noise immunity to the communication channel, the output load transients must be isolated
from the RX coil. The proprietary feature Adaptive Communication Limit achieves this by dynamically adjusting
the current limit of the regulator.
This can be seen in Figure 12. In this plot, an output load is limited to 400 mA during communications time. The
pulses on VRECT indicate that a communication packet event is occurring. The regulator limits the load to a
constant 400 mA and, therefore, preserves communication.
8.3.4.10 Synchronous Rectification
The bq5105x provides an integrated, self-driven synchronous rectifier that enables high-efficiency AC to DC
power conversion. The rectifier consists of an all NMOS H-Bridge driver where the back gates of the diodes are
configured to be the rectifier when the synchronous rectifier is disabled. During the initial start-up of the WPC
system the synchronous rectifier is not enabled. At this operating point, the DC rectifier voltage is provided by the
diode rectifier. Once VRECT is greater than VUVLO, half synchronous mode will be enabled until the load current
surpasses IBAT-SR. Above IBAT-SR the full synchronous rectifier stays enabled until the load current drops back
below the hysteresis level (IBAT-SRH) where half synchronous mode is re-enabled.
8.3.4.11 Internal Temperature Sense (TS Function of the TS/CTRL Pin)
The bq5105x includes a ratiometric battery temperature sense circuit. The temperature sense circuit has two
ratiometric thresholds which represent hot and cold conditions. An external temperature sensor is recommended
to provide safe operating conditions to the receiver product. This pin is best used when monitoring the battery
temperature.
The circuits in Figure 29 allow for any NTC resistor to be used with the given VHOT and VCOLD thresholds. The
thermister characteristics and threshold temperatures selected will determine which circuit is best for an
application.
ëÇ{.
ëÇ{.
20 lQ
w2
20 lQ
w2
Ç{ꢀ/Çw[
Ç{ꢀ/Çw[
w1
w1
w3
/
3
/
3
bÇ/
bÇ/
Figure 29. NTC Circuit Options for Safe Operation of the Wireless Receiver Power Supply
24
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ZHCSAX2F –JULY 2012–REVISED JUNE 2017
The resistors R1 and R3 can be solved by resolving the system of equations at the desired temperature
thresholds. The two equations are:
æ
ç
ç
è
ö
÷
÷
ø
R3
R
+ R
1
TCOLD
(
)
NTC
R + R
+ R
(
NTC
)
3
NTC
1
TCOLD
%VCOLD
=
´100
æ
ç
ç
è
ö
÷
÷
ø
R3
R
+ R
(
)
1
TCOLD
+ R2
R + R
+ R
1
(
)
3
NTC
TCOLD
(3)
(4)
æ
ö
÷
÷
ø
R3
R
+ R
1
THOT
(
(
NTC
)
NTC
ç
ç
è
R + R
+ R
)
3
NTC
1
THOT
%VHOT
=
´100
æ
ö
÷
÷
ø
R3
R
+ R
(
)
1
THOT
ç
ç
è
+ R2
R + R
+ R
(
)
3
NTC
1
THOT
Where:
RNTC
1
1
1
b
-
(
)
TCOLD
To
= Roe
TCOLD
1
b
-
(
)
THOT
To
RNTC
= Roe
THOT
TCOLD and THOT are the desired temperature thresholds in degrees Kelvin. Ro is the nominal resistance at T0
(25°C) and β is the temperature coefficient of the NTC resistor. For an example solution for part number ERT-
JZEG103JA see the BQ5105XB NTC Calculator Tool, (SLUS629).
Where,
TCOLD = 0°C (273.15°K)
THOT = 60°C (333.15°K)
β = 3380
Ro = 10 kΩ
The plot of the percent VTSB versus temperature is shown in Figure 30:
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Figure 30. Example Solution for Panasonic Part # ERT-JZEG103JA
Figure 31 shows the periodic biasing scheme used for measuring the TS state. An internal TS_READ signal
enables the TS bias voltage for 25 ms. During this period the TS comparators are read (each comparator has a
10-ms deglitch) and appropriate action is taken based on the temperature measurement. After this 25-ms period
has elapsed the TS_READ signal goes low, which causes the TS/CTRL pin to become high impedance. During
the next 100-ms period, the TS voltage is monitored and compared to VCTRL-HI. If the TS voltage is greater than
VCTRL-HI then a secondary device is driving the TS/CTRL pin and a CTRL = 1 is detected.
240ms
Figure 31. Timing Diagram for TS Detection Circuit
8.3.4.11.1 TS/CTRL Function
The TS/CTRL pin offers three functions:
•
•
•
NTC temperature monitoring
Charge done indication
Fault indication
When an NTC resistor is connected between the TS/CTRL pin and PGND, the NTC function is allowed to
operate. This functionality can effectively be disabled by connecting a 10 kΩ resistor from TS/CRTL to PGND. If
the TS/CTRL pin is pulled above VCTRL-HI, the RX is shut down with the indication of a charge complete
condition. If the TS/CTRL pin is pulled below VCTRL-LOW, the RX is shut down with the indication of a fault.
26
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8.3.4.11.2 Thermal Protection
The bq5105x includes thermal shutdown protection. If the die temperature reaches TJ-SD, the LDO is shut off to
prevent any further power dissipation. Once the temperature falls TJ-Hys below TJ-SD, operation can continue.
8.3.4.12 WPC v1.2 Compatibility
The bq5105x is a WPC v1.2 compatible device. In order to enable a Power Transmitter to monitor the power loss
across the interface as one of the possible methods to limit the temperature rise of Foreign Objects, the bq5105x
reports its Received Power to the Power Transmitter. The Received Power equals the power that is available
from the output of the Power Receiver plus any power that is lost in producing that output power. For example,
the power loss includes (but is not limited to) the power loss in the Secondary Coil and series resonant capacitor,
the power loss in the Shielding of the Power Receiver, the power loss in the rectifier, the power loss in any post-
regulation stage, and the eddy current loss in metal components or contacts within the Power Receiver. In the
WPC v1.2 specification, foreign object detection (FOD) is enforced, that means the bq5105x will send received
power information with known accuracy to the transmitter.
WPC v1.2 defines Received Power as “the average amount of power that the Power Receiver receives through
its Interface Surface, in the time window indicated in the Configuration Packet”.
A Receiver will be certified as WPC v1.2 only after meeting the following requirement. The device under test
(DUT) is tested on a Reference Transmitter whose transmitted power is calibrated, the receiver must send a
received power such that:
0 < (TX PWR) REF – (RX PWR out) DUT < 375 mW
(5)
This 250 mW bias ensures that system will remain interoperable.
WPC v1.2 Transmitters will be tested to see if they can detect reference Foreign Objects with a Reference
receiver. The WPC v1.2 specification allows much more accurate sensing of Foreign Objects than WPC v1.0.
A Transmitter can be certified as a WPC v1.2 only after meeting the following requirement. A Transmitter is
tested to see if it can prevent some reference Foreign Objects (disc, coin, foil) from exceeding their threshold
temperature (60°C, 80°C).
8.4 Device Functional Modes
The general modes of battery charging are described above in the Feature Description. The bq5105x devices
have several functional modes. Start-up refers to the initial power transfer and communication between the
receiver (bq5105x circuit) and the transmitter. Power transfer refers to any time that the TX and RX are
communicating and power is being delivered from the TX to the RX. Charge termination covers intentional
termination (charge complete) and unintentional termination (removal of the RX from the TX, over temperature or
other fault conditions).
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The bq51050B is an integrated wireless power receiver and charger in a single device. The device complies with
the WPC v1.2 specifications for a wireless power receiver. When paired with a WPC v1.2 compliant transmitter, it
can provide up to 5-W of power for battery charging. There are several tools available for the design of the
system. These tools may be obtained by checking the product page at www.ti.com/product/bq51050b.
9.2 Typical Application
9.2.1 bq51050B Used as a Wireless Power Receiver and Li-Ion/Li-Pol Battery Charger
The following application discussion covers the requirements for setting up the bq51050B in a Qi-compliant
system for charging a battery.
bq5105xB
AD-EN
AD
BAT
CCOMM1
C4
C3
COMM1
BOOT1
AC1
CBOOT1
D1
RECT
C1
R4
TI
TX
COIL
Wireless
Power
Transmitter
RX
COIL
PACK+
C2
NTC
TS/CTRL
AC2
BOOT2
COMM2
ROS
PACK-
CBOOT2
CHG
CCOMM2
CCLAMP2
CCLAMP1
CLAMP2
CLAMP1
ILIM
TERM
EN2
Tri-State
Bi-State
HOST
R5
PGND
FOD
R1
RFOD
Copyright © 2016, Texas Instruments Incorporated
Figure 32. Typical Application Schematic
9.2.1.1 Design Requirements
This application is for a 4.2-V Lithium-Ion battery to be charged at 800 mA. Because this is planned for a WPC
v1.2 solution, any of the Qi-certified transmitters can be used interchangeably so no discussion of the TX is
required. To charge a 4.20-V Li-Ion battery, the bq51050B will be chosen. Each of the components from the
application drawing will be examined. Temperature sensing of the battery must be done with JEITA
specifications. An LED indicator is required to notify the user if charging is active.
28
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Typical Application (continued)
9.2.1.2 Detailed Design Procedure
9.2.1.2.1 Series and Parallel Resonant Capacitor Selection
Shown in Figure 33, the capacitors C1 (series) and C2 (parallel) make up the dual resonant circuit with the
receiver coil. These two capacitors must be sized correctly per the WPC v1.2 specification. Figure 33 shows the
equivalent circuit of the dual resonant circuit:
/1 (/s)
[•[
/2 (/d)
Figure 33. Dual Resonant Circuit with the Receiver Coil
The power receiver design requirements in volume 1 of the WPC v1.2 specification highlights in detail the sizing
requirements. To summarize, the receiver designer will be required take inductance measurements with a fixed
test fixture. The test fixture is shown in Figure 34:
Magnetic
Interface
Surface
Attractor
(example)
Secondary Coil
Shielding (optional)
Mobile
Device
Spacer
d
z
Primary Shielding
Figure 34. WPC v1.2 Receiver Coil Test Fixture for the Inductance Measurement Ls’
The primary shield is to be 50 mm × 50 mm × 1 mm of Ferrite material PC44 from TDK Corp. The gap (dZ) is to
be 3.4 mm. The receiver coil, as it will be placed in the final system (for example, the back cover and battery
must be included if the system calls for this), is to be placed on top of this surface and the inductance is to be
measured at 1-V RMS and a frequency of 100 kHz. This measurement is termed Ls’. The measurement termed
Ls is the free-space inductance. Each capacitor can then be calculated using Equation 6:
1
C1 =
(2p´ ¦s)2 ´L's
æ
ö-1
÷
ø
1
C = (¦ ´ 2p)2 ´L -
ç
2
D
s
C1
è
(6)
Where fS is 100 kHz +5/–10% and fD is 1 MHz ±10%. C1 must be chosen first prior to calculating C2. The quality
factor must be greater than 77 and can be determined by Equation 7:
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Typical Application (continued)
2p´ ¦D ´Ls
Q =
R
(7)
Where R is the DC resistance of the receiver coil. All other constants are defined above.
For this application, we will design with an inductance measurement (L) of 11 µH and an Ls' of 16 µH with a DC
resistance of 191 mΩ. Plugging Ls' into Equation 6 above, we get a value for C1 to be 158.3 nF. The range on
the capacitance is about 144 nF to 175 nF. To build the resulting value, the optimum solution is usually found
with 3 capacitors in parallel. This allows for more precise selection of values, lower effective resistance and
better thermal results. To get 158 nF, choose from standard values. In this case, the values are 68 nF, 47 nF and
39 nF for a total of 154 nF. Well in the required range. Now that C1 is chosen, the value of C2 can be calculated.
The result of this calculation is 2.3 nF. The practical solution for this is 2 capacitors, a 2.2 nF capacitor and a 100
pF capacitor. In all cases, these capacitors must have at least a 25-V rating. Solving for the quality factor (Q) this
solution shows a rating over 500.
9.2.1.2.2 COMM, CLAMP and BOOT Capacitors
For most applications, the COMM, CLAMP and BOOT capacitors will be chosen to match the Evaluation Module.
The BOOT capacitors are used to allow the internal rectifier FETs to turn on and off properly. These capacitors
are on the AC1 or AC2 lines to the Boot nodes and should have a minimum of 10-V rating. A 10-nF capacitor
with a 10-V rating is chosen.
The CLAMP capacitors are used to aid the clamping process to protect against overvoltage. Choosing a 0.47-µF
capacitor with a 25-V rating is appropriate for most applications.
The COMM capacitors are used to facilitate the communication from the RX to the TX. This selection can vary a
bit more than the BOOT and CLAMP capacitors. In general, a 22-nF capacitor is recommended. Based on the
results of testing of the communication robustness, a change to a 47-nF capacitor may be in order. The larger
the capacitor the larger the deviation will be on the coil which sends a stronger signal to the TX. This also
decreases the efficiency somewhat. In this case, choose the 22-nF capacitor with the 25-V rating.
9.2.1.2.3 Charging and Termination Current
The Design Requirements show an 800-mA charging current and an 80-mA termination current.
Setting the charge current (IBULK) is done by selecting the R1 and RFOD. Solving Equation 1 results in RILIM of 393
Ω. Setting RFOD to 200 Ω as a starting point before the FOD calibration is recommended. This leaves 205 Ω for
R1. Using standard resistor values (or resistors in series / parallel) can improve accuracy.
Setting the termination current is done with Equation 2. Because 80 mA is 10% of the IBULK (800mA), the RTERM
is calculated as (240 * 10) or 2.4 kΩ.
9.2.1.2.4 Adapter Enable
The AD pin will be tied to the external USB power source to allow for an external source to power the system.
AD_EN is tied to the gate of Q1 (CSD75205W1015). This allows the bq51050B to sense when power is applied
to the AD pin. The EN2 pin controls whether the wired source will be enabled or not. EN2 is tied to the system
host to allow it to control the use of the USB power. If wired power is enabled and present, the AD pin will
disable the BAT output and then enable Q1 through the AD_EN pin. An external charger is required to take
control of the battery charging.
9.2.1.2.5 Charge Indication and Power Capacitors
The CHG pin is open-drain. D1 and R4 are selected as a 2.1-V forward bias capable of 2 mA and a 100-Ω
current-limiting resistor.
RECT is used to smooth the internal AC to DC conversion. Two 10-µF capacitors and a 0.1-µF capacitor are
chosen. The rating is 25 V.
BAT capacitors are 1.0 µF and 0.1 µF.
30
Copyright © 2012–2017, Texas Instruments Incorporated
bq51050B, bq51051B, bq51052B
www.ti.com.cn
ZHCSAX2F –JULY 2012–REVISED JUNE 2017
Typical Application (continued)
9.2.1.3 Application Curves
VRECT
VRECT
VBAT
VBAT
IBAT
IBAT
Figure 35. Battery Insertion During Precharge
Figure 36. Precharge to Fast-Charge Transition
Copyright © 2012–2017, Texas Instruments Incorporated
31
bq51050B, bq51051B, bq51052B
ZHCSAX2F –JULY 2012–REVISED JUNE 2017
www.ti.com.cn
Typical Application (continued)
9.2.2 Application for Wired Charging
The application discussed below will cover the same requirements as the first example and will add a DC supply
with a secondary charger. This solution covers using a standard DC supply or a USB port as the supply.
R8
D2
bq24040
IN
OUT
TS
R9
ISET
VSS
/CHG
ISET2
NC
C6
R6
C7
D3
CSD75207W15
Q1
PRETERM
/PG
USB or
AC Adapter
Input
R7
bq5105xB
C5
AD-EN
AD
BAT
CCOMM1
COMM1
CBOOT1
C4
D1
BOOT1
RECT
C1
AC1
R4
C3
TI
TX
COIL
Wireless
Power
Transmitter
RX
COIL
PACK+
C2
NTC
TS/CTRL
AC2
BOOT2
CBOOT2
ROS
PACK-
COMM2
CCOMM2
CHG
CLAMP2
CCLAMP2
TERM
EN2
Tri-State
Bi-State
CLAMP1
CCLAMP1
HOST
R5
FOD
PGND
ILIM
R1
RFOD
Copyright
© 2016, Texas Instruments Incorporated
Figure 37. bq51050B Wireless Power Receiver and Wired Charger
9.2.2.1 Design Requirements
The requirements for this solution are identical to the first application so all common components are identical.
This solution adds a wired charger and a blocking back-back FET (Q1).
The addition of a wired charger is simply enabled. The AD pin on the bq5105x is tied to the input of the DC
supply. When the bq5105x senses a voltage greater than VAD-Pres on the AD pin, the BAT pin will be disabled
(high impedance). Once the BAT pin is disabled, the AD_EN pin will transition and enable Q1. If wireless power
is not present, the functionality of AD and AD_EN remains and wired charging can take place.
9.2.2.2 Detailed Design Procedure
9.2.2.2.1 Blocking Back-Back FET
Q1 is recommended to eliminate the potential for both wired and wireless systems to drive current to the
simultaneously. The charge current and DC voltage level will set up parmerters for the blocking FET. The
requirements for this system are 1 A for the wired charger and 5 V DC. The CSD75207W15 is chosen for its low
RON and small size.
The wired charger in this solution is the bq24040. See the bq24040 datasheet (SLUS941) for specific component
selection.
32
Copyright © 2012–2017, Texas Instruments Incorporated
bq51050B, bq51051B, bq51052B
www.ti.com.cn
ZHCSAX2F –JULY 2012–REVISED JUNE 2017
10 Power Supply Recommendations
The bq51050B requires a Qi-compatible transmitter as its power supply.
11 Layout
11.1 Layout Guidelines
•
•
•
•
•
•
•
Keep the trace resistance as low as possible on AC1, AC2, and BAT.
Detection and resonant capacitors need to be as close to the device as possible.
COMM, CLAMP, and BOOT capacitors need to be placed as close to the device as possible.
Via interconnect on PGND net is critical for appropriate signal integrity and proper thermal performance.
High frequency bypass capacitors need to be placed close to RECT and OUT pins.
ILIM and FOD resistors are important signal paths and the loops in those paths to PGND must be minimized.
For the RHL package, connect the thermal pad to ground to help dissipate heat.
Signal and sensing traces are the most sensitive to noise; the sensing signal amplitudes are usually
measured in mV, which is comparable to the noise amplitude. Make sure that these traces are not being
interfered by the noisy and power traces. AC1, AC2, BOOT1, BOOT2, COMM1, and COMM2 are the main
source of noise in the board. These traces should be shielded from other components in the board. It is
usually preferred to have a ground copper area placed underneath these traces to provide additional
shielding. Also, make sure they do not interfere with the signal and sensing traces. The PCB should have a
ground plane (return) connected directly to the return of all components through vias (two vias per capacitor
for power-stage capacitors, one via per capacitor for small-signal components).
For a 1-A fast charge current application, the current rating for each net is as follows:
•
•
•
•
•
•
AC1 = AC2 = 1.2 A
OUT = 1 A
RECT = 100 mA (RMS)
COMMx = 300 mA
CLAMPx = 500 mA
All others can be rated for 10 mA or less
11.2 Layout Example
/[!ꢁt2
capaciꢀor
.hhÇ2
.!Ç
.hhÇ2
capaciꢀor
!/2
L[Lꢁ
9b2
!/1-!/2 capaciꢀors
tDb5
Ç9wꢁ
!5
ꢂ/ID
/hꢁꢁ1
!/1
.hhÇ1
capaciꢀor
.!Ç
.hhÇ1
/[!ꢁt2
capaciꢀor
.!Ç capaciꢀors
Figure 38. bq5105x Layout Example
版权 © 2012–2017, Texas Instruments Incorporated
33
bq51050B, bq51051B, bq51052B
ZHCSAX2F –JULY 2012–REVISED JUNE 2017
www.ti.com.cn
12 器件和文档支持
12.1 文档支持
12.1.1 相关文档
相关文档如下:
《具有自动启动功能的 bq2404x 1A 单输入单节锂离子和锂聚合物电池充电器》,SLUS941
12.2 相关链接
下面的表格列出了快速访问链接。类别包括技术文档、支持与社区资源、工具和软件,以及申请样片或购买产品的
快速链接。
表 2. 相关链接
器件
产品文件夹
请单击此处
请单击此处
请单击此处
样片与购买
请单击此处
请单击此处
请单击此处
技术文档
请单击此处
请单击此处
请单击此处
工具和软件
请单击此处
请单击此处
请单击此处
支持和社区
请单击此处
请单击此处
请单击此处
bq51050B
bq51051B
bq51052B
12.3 接收文档更新通知
要接收文档更新通知,请转至 ti.com 上您的器件的产品文件夹。请在右上角单击通知我 按钮进行注册,即可收到
产品信息更改每周摘要(如有)。有关更改的详细信息,请查看任意已修订文档的修订历史记录。
12.4 社区资源
下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范,
并且不一定反映 TI 的观点;请参阅 TI 的 《使用条款》。
TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在
e2e.ti.com 中,您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。
设计支持
TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。
12.5 商标
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.6 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损
伤。
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 机械、封装和可订购信息
以下页面包括机械、封装和可订购信息。这些信息是指定器件的最新可用数据。这些数据发生变化时,我们可能不
会另行通知或修订此文档。如欲获取此产品说明书的浏览器版本,请参见左侧的导航栏。
34
版权 © 2012–2017, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
BQ51050BRHLR
BQ51050BRHLT
BQ51050BYFPR
BQ51050BYFPT
BQ51051BRHLR
BQ51051BRHLT
BQ51051BYFPR
BQ51051BYFPT
BQ51052BYFPR
BQ51052BYFPT
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
VQFN
VQFN
RHL
RHL
YFP
YFP
RHL
RHL
YFP
YFP
YFP
YFP
20
20
28
28
20
20
28
28
28
28
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
0 to 125
0 to 125
0 to 125
0 to 125
0 to 125
0 to 125
0 to 125
0 to 125
0 to 125
0 to 125
BQ51050B
NIPDAU
SNAGCU
SNAGCU
NIPDAU
NIPDAU
SNAGCU
SNAGCU
SNAGCU
SNAGCU
BQ51050B
BQ51050B
BQ51050B
BQ51051B
BQ51051B
BQ51051B
BQ51051B
BQ51052B
BQ51052B
DSBGA
DSBGA
VQFN
VQFN
DSBGA
DSBGA
DSBGA
DSBGA
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
20-Apr-2023
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
BQ51050BRHLR
BQ51050BRHLT
BQ51050BYFPR
BQ51050BYFPT
BQ51051BRHLR
BQ51051BRHLT
BQ51051BYFPR
BQ51051BYFPT
BQ51052BYFPR
BQ51052BYFPT
VQFN
VQFN
RHL
RHL
YFP
YFP
RHL
RHL
YFP
YFP
YFP
YFP
20
20
28
28
20
20
28
28
28
28
3000
250
330.0
180.0
180.0
180.0
330.0
180.0
180.0
180.0
180.0
180.0
12.4
12.4
8.4
3.71
3.71
2.0
4.71
4.71
3.13
3.13
4.71
4.71
3.13
3.13
3.13
3.13
1.1
1.1
0.6
0.6
1.1
1.1
0.6
0.6
0.6
0.6
8.0
8.0
4.0
4.0
8.0
8.0
4.0
4.0
4.0
4.0
12.0
12.0
8.0
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
DSBGA
DSBGA
VQFN
3000
250
8.4
2.0
8.0
3000
250
12.4
12.4
8.4
3.71
3.71
2.0
12.0
12.0
8.0
VQFN
DSBGA
DSBGA
DSBGA
DSBGA
3000
250
8.4
2.0
8.0
3000
250
8.4
2.0
8.0
8.4
2.0
8.0
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
20-Apr-2023
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
BQ51050BRHLR
BQ51050BRHLT
BQ51050BYFPR
BQ51050BYFPT
BQ51051BRHLR
BQ51051BRHLT
BQ51051BYFPR
BQ51051BYFPT
BQ51052BYFPR
BQ51052BYFPT
VQFN
VQFN
RHL
RHL
YFP
YFP
RHL
RHL
YFP
YFP
YFP
YFP
20
20
28
28
20
20
28
28
28
28
3000
250
346.0
210.0
182.0
182.0
346.0
210.0
182.0
182.0
182.0
182.0
346.0
185.0
182.0
182.0
346.0
185.0
182.0
182.0
182.0
182.0
33.0
35.0
20.0
20.0
33.0
35.0
20.0
20.0
20.0
20.0
DSBGA
DSBGA
VQFN
3000
250
3000
250
VQFN
DSBGA
DSBGA
DSBGA
DSBGA
3000
250
3000
250
Pack Materials-Page 2
PACKAGE OUTLINE
VQFN - 1 mm max height
RHL0020A
PLASTIC QUAD FLATPACK- NO LEAD
A
3.6
3.4
B
PIN 1 INDEX AREA
4.6
4.4
C
1 MAX
SEATING PLANE
0.08 C
2.05±0.1
2X 1.5
SYMM
0.5
0.3
20X
(0.2) TYP
10
11
14X 0.5
9
12
SYMM
21
2X
3.05±0.1
3.5
19
2
0.29
20X
0.19
0.1
0.05
20
1
PIN 1 ID
(OPTIONAL)
C A B
C
4X (0.2)
2X (0.55)
4219071 / A 05/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
VQFN - 1 mm max height
RHL0020A
PLASTIC QUAD FLATPACK- NO LEAD
(3.3)
(2.05)
2X (1.5)
SYMM
1
20
2X (0.4)
20X (0.6)
19
2
20X (0.24)
14X (0.5)
SYMM
21
(3.05) (4.3)
6X (0.525)
2X (0.75)
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
9
12
(R0.05) TYP
(Ø0.2) VIA
TYP)
10
11
4X (0.2)
4X
(0.775)
2X (0.55)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 18X
0.07 MAX
ALL AROUND
SOLDER MASK
OPENING
0.07 MIN
ALL AROUND
EXPOSED METAL
EXPOSED METAL
METAL
METAL UNDER
SOLDER MASK
SOLDER MASK
OPENING
NON SOLDER MASK
SOLDER MASK
DEFINED
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4219071 / A 05/2017
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments
literature number SLUA271 (www.ti.com/lit/slua271)
.
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
6. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to theri
locations shown on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
VQFN - 1 mm max height
RHL0020A
PLASTIC QUAD FLATPACK- NO LEAD
(3.3)
2X (1.5)
(0.55)
TYP
(0.56)
TYP
1
20
SOLDER MASK EDGE
TYP
20X (0.6)
2
19
20X (0.24)
14X (0.5)
SYMM
(1.05)
TYP
(4.3)
21
6X
(0.85)
(R0.05) TYP
METAL
TYP
12
9
2X
(0.775)
2X (0.25)
6X (0.92)
11
10
4X (0.2)
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.1mm THICK STENCIL
EXPOSED PAD
75% PRINTED COVERAGE BY AREA
SCALE: 20X
4219071 / A 05/2017
NOTES: (continued)
7.
Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations..
www.ti.com
D: Max = 3.036 mm, Min =2.976 mm
E: Max = 1.913 mm, Min =1.852 mm
重要声明和免责声明
TI“按原样”提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,
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TI 针对 TI 产品发布的适用的担保或担保免责声明。
TI 反对并拒绝您可能提出的任何其他或不同的条款。IMPORTANT NOTICE
邮寄地址:Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2023,德州仪器 (TI) 公司
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DC-DC Regulated Power Supply Module, 1 Output, 336W, Hybrid, ROHS COMPLIANT, EIGHTH BRICK PACKAGE-5
SYNQOR
BQ55090EPA35PKS-G
DC-DC Regulated Power Supply Module, 1 Output, 336W, Hybrid, ROHS COMPLIANT, EIGHTH BRICK PACKAGE-5
SYNQOR
BQ55090EPA35PNS-G
DC-DC Regulated Power Supply Module, 1 Output, 336W, Hybrid, ROHS COMPLIANT, EIGHTH BRICK PACKAGE-5
SYNQOR
BQ55090EPA35PRS-G
DC-DC Regulated Power Supply Module, 1 Output, 336W, Hybrid, ROHS COMPLIANT, EIGHTH BRICK PACKAGE-5
SYNQOR
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