BQ78PL116RGZT [TI]
具有 PowerPump 电池平衡技术的 PowerLAN 主网关控制器 | RGZ | 48 | -40 to 85;
| 型号： | BQ78PL116RGZT |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有 PowerPump 电池平衡技术的 PowerLAN 主网关控制器 | RGZ | 48 | -40 to 85 局域网 电池 控制器 电源管理电路 电源电路 |
| 文件： | 总34页 (文件大小：454K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
bq78PL116
www.ti.com
SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
PowerLAN™ Master Gateway Battery Management Controller
With PowerPump™ Cell Balancing Technology
Check for Samples: bq78PL116
1
FEATURES
of Cells and MOSFETs With up to 4 Sensors
23
•
bq78PL116 Designed for Managing 3- to
16-Series-Cell Battery Systems
•
•
Fail-Safe Operation of Pack Protection
Circuits: Up to Three Power MOSFETs and
One Secondary Safety Output (Fuse)
–
Support for LCD and Electronic Paper
Displays or EPDs
Fully Programmable Voltage, Current, Balance,
and Temperature-Protection Features
–
Configurable for 11-A, 26-A, or 110-A
Operating Currents
•
•
External Inputs for Auxiliary MOSFET Control
•
Systems With More Than Four Series Cells
Require External bq76PL102 Dual-Cell
Monitors
Smart Battery System 1.1 Compliant via
SMBus
APPLICATIONS
•
SmartSafety Features:
•
Portable Medical Instruments and Test
Equipment
Mobility Devices (E-Bike)
Uninterruptible Power Supplies and Hand-Held
Tools
–
–
Prevention: Optimal Cell Management
Diagnosis: Improved Sensing of Cell
Problems
•
•
–
Fail Safe: Detection of Event Precursors
•
•
Rate-of-Change Detection of All Important Cell
Characteristics:
DESCRIPTION
–
–
Impedance
The bq78PL116 master gateway battery controller is
part of a complete Li-Ion control, monitoring, and
safety solution designed for large series cell strings.
Cell Temperature
PowerPump Technology Transfers Charge
Efficiently From Cell to Cell During All
Operating Conditions, Resulting in Longer
Run Time and Cell Life
The bq78PL116 along with bq76PL102 PowerLAN™
dual-cell monitors provide complete battery-system
control, communications, and safety functions for a
structure of three up to 16 series cells. This
–
Includes User-Configurable PowerPump
Cell-Balancing Modes
PowerLAN
system
provides
simultaneous,
synchronized voltage and current measurements
using one A/D per-cell technology. This eliminates
system-induced noise from measurements and allows
the precise, continuous, real-time calculation of cell
impedance under all operating conditions, even
during widely fluctuating load conditions.
•
•
High-Resolution 18-Bit Integrating Delta-Sigma
Coulomb Counter for Precise Charge-Flow
Measurements and Gas Gauging
Multiple Independent Δ-Σ ADCs: One-per-Cell
Voltage, Plus Separate Temperature, Current,
and Safety
PowerPump technology transfers charge between
cells to balance their voltage and capacity. Balancing
is possible during all battery modes: charge,
discharge, and rest. Highly efficient charge-transfer
circuitry nearly eliminates energy loss while providing
true real-time balance between cells, resulting in
longer run-time and improved cycle life.
•
•
Simultaneous, Synchronous Measurement of
Pack Current and Individual Cell Voltages
Very Low Power Consumption
–
< 400 μA Active, < 185 μA Standby, < 85 μA
Ship, and < 1 μA Undervoltage Shutdown
•
Accurate, Advanced Temperature Monitoring
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
3
PowerLAN, PowerPump, bqWizard are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
© 2010–2011, Texas Instruments Incorporated
bq78PL116
SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DESCRIPTION (CONTINUED)
Temperature is sensed by up to 4 external sensors and one on-chip sensor. This permits accurate temperature
monitoring of each cell individually. Firmware is then able to compensate for the temperature-induced effects on
capacity, impedance, and OCV on a cell-by-cell basis, resulting in superior charge/ discharge and balancing
control.
External MOSFET control inputs provide user- definable direct hardware control over MOSFET states. Smart
control prevents excessive current through MOSFET body diodes. Auxiliary inputs can be used for enhanced
safety and control in large multicell arrays.
The bq78PL116 is completely user-configurable, with parametric tables in flash memory to suit a variety of cell
chemistries, operating conditions, safety controls, and data reporting needs. It is easily configured using the
supplied bqWizard™ graphical user interface (GUI). The device is fully programmed and requires no algorithm or
firmware development.
The bq78PL116 pin functions of LED1/SEG1–LED5/SEG5, PSH/BP/TP, and FIELD support LED, LCD, and
electronic paper displays (EPDs). The user can configure the bq78PL116 for the desired display type.
P-LAN
V4
P4N
P4S
XT4
PRE
Voltage
CHG
Balance
Temp
First-Level Safety
and
FET Control
DSG
EFCID
EFCIC
V3
P3N
P3S
XT3
Voltage
Balance
Temp
SPROT
CSBAT
CSPACK
Second-Level
Safety
RISC
CPU
V2
P2N
P2S
XT2
Voltage
Balance
Temp
Coulomb Counter
Current A/D
CCBAT
CCPACK
V1
P1N
P1S
XT1
Voltage
LED1–5/SEG1–5,
PSH/BP/TP,
FIELD
PowerLAN
Communication
Link
7
GPIO
Balance
Temp
SMBCLK
SMBDAT
SMBus
Reset
Logic
Internal
Oscillator
RSTN
Internal
Temperature
Watchdog
VLDO1
2.5 V LDO
Core / CPU
Measure
I/O
Safety
B0320-03
Figure 1. BQ78PL116 Internal Block Diagram
2
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Product Folder Link(s): bq78PL116
bq78PL116
www.ti.com
SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
Pack Protection
Circuits and Fuse
12
11
10
9
8
7
6
PowerLAN
Communication
Link
5
4
3
SMBus
2
1
RSENSE
Figure 2. Example bq78PL116 System Implementation (12 Cells)
© 2010–2011, Texas Instruments Incorporated
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Product Folder Link(s): bq78PL116
bq78PL116
SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
www.ti.com
Table 1. ORDERING INFORMATION
Cell
Package
Designator
Temperature
Range
Ordering
Number
Quantity, Transport
Media
Product
Package
Configuration(1)
bq78PL116RGZ
T
250, tape and reel
2500, tape and reel
QFN-48, 7-mm ×
bq78PL116 3 to 16 series cells
RGZ
–40°C to 85°C
7-mm
bq78PL116RGZ
R
(1) For configurations consisting of more than four series cells, additional bq76PL102 parts must be used.
AVAILABLE OPTIONS
bq78PL116
RGZ Package
(Top View)
1
36
35
34
33
32
31
30
29
28
27
26
25
CHG
DSG
LED5/SEG5
LED4/SEG4
LED3/SEG3
LED2/SEG2
LED1/SEG1
PSH/BP/TP
SPROT
2
3
PRE
4
EFCIC
EFCID
CCBAT
CCPACK
VLDO1
CSBAT
CSPACK
OSCI
5
6
Thermal Pad
7
8
FIELD
9
NC
10
11
12
NC
NC
OSCO
RSTN
P0023-25
Figure 3. bq78PL116 Pinout
bq78PL116 TERMINAL FUNCTIONS
NAME
CCBAT
NO.
TYPE(1)
DESCRIPTION
6
7
IA
IA
O
IA
IA
O
I
Coulomb counter input (sense resistor), connect to battery negative
Coulomb counter input (sense resistor), connect to pack negative
Charge MOSFET control (active-high, low opens MOSFET)
Current sense input (safety), connect to battery negative
Current sense input (safety), connect to pack negative
Discharge MOSFET control (active-high, low opens MOSFET)
External charge MOSFET control input
CCPACK
CHG
1
CSBAT
CSPACK
DSG
9
10
2
EFCIC
EFCID
4
5
I
External discharge MOSFET control input
(1) Types: I = Input, IA = Analog input, IO = Input/Output, O = Output, P = Power
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© 2010–2011, Texas Instruments Incorporated
Product Folder Link(s): bq78PL116
bq78PL116
www.ti.com
SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
bq78PL116 TERMINAL FUNCTIONS (continued)
NAME
FIELD
LED1/SEG1
LED2/SEG2
LED3/SEG3
LED4/SEG4
LED5/SEG5
N/C
NO.
29
32
33
34
35
36
26, 27
28
11
12
15
17
16
21
20
23
22
24
3
TYPE(1)
DESCRIPTION
O
EPD field segment
O
LED1 – open-drain, active-low, LCD and EPD segment 1
LED2 – open-drain, active-low, LCD and EPD segment 2
LED3 – open-drain, active-low, LCD and EPD segment 3
LED4 – open-drain, active-low, LCD and EPD segment 4
LED5 – open-drain, active-low, LCD and EPD segment 5
Connect 1-MΩ resistor to VSS
O
O
O
O
IO
O
N/C
No connect
OSCI
I
External oscillator input (no connect, internal oscillator used)
External oscillator output (no connect, internal oscillator used)
Charge-balance gate drive, cell 1 north
Charge-balance gate drive, cell 2 north
Charge-balance gate drive, cell 2 south
Charge-balance gate drive, cell 3 north
Charge-balance gate drive, cell 3 south
Charge-balance gate drive, cell 4 north
Charge-balance gate drive, cell 4 south
PowerLAN I/O to external bq76PL102 nodes
Precharge MOSFET control (active-high)
Pushbutton detect for LED display, LCD backplane, EPD top plane and charge pump
Device reset, active-low
OSCO
P1N
O
O
P2N
O
P2S
O
P3N
O
P3S
O
P4N
O
P4S
O
P-LAN
PRE
IO
O
PSH/BP/TP
RSTN
SDI1
31
25
14
19
13
18
37
38
30
47
44
42
39
8
IO
I
I
Connect to SDO0 via a capacitor
SDI3
I
Internal PowerLAN connection – connect to SDO2 through a 0.01-μF capacitor
Requires 100-kΩ pullup resistor to VLDO1
Internal PowerLAN connection – connect to SDI3 through a 0.01-μF capacitor
SMBus clock signal
SDO0
SDO2
SMBCLK
SMBDAT
SPROT
V1
O
O
IO
IO
O
SMBus data signal
Secondary protection output, active-high (FUSE)
Cell-1 positive input
IA
IA
IA
IA
P
V2
Cell-2 positive input
V3
Cell-3 positive input
V4
Cell-4 positive input
VLDO1
VLDO2
VSS
Internal LDO-1 output, bypass with 10-μF capacitor to VSS
Internal LDO-2 output, bypass with 10-μF capacitor to V2
Cell-1 negative input
43
48
46
45
41
40
–
P
IA
IA
IA
IA
IA
P
XT1
External temperature-sensor-1 input
XT2
External temperature-sensor-2 input
XT3
External temperature-sensor-3 input
XT4
External temperature-sensor-4 input
–
Thermal pad. Connect to VSS
© 2010–2011, Texas Instruments Incorporated
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bq78PL116
SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
www.ti.com
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted)
RANGE
–40 to 85
UNITS
°C
°C
V
TA
Operating free-air temperature (ambient)
Tstg
Storage temperature
–65 to 150
V4
Voltage range with respect to V3
Voltage range with respect to V2
Voltage range with respect to V1
Voltage range with respect to VSS
Voltage range with respect to VSS
Voltage on I/O pin with respect to VSS
Voltage range with respect to VSS
Voltage with respect to VSS
–0.5 to 5.0
V3
–0.5 to 5.0
V
V2
–0.5 to 5.0
V
V1
–0.5 to 5.0
V
EFCIC, EFCID
LED1/SEG1—LED5/SEG5
SMBCLK, SMBDAT
VLDO1
–0.5 to 5.0
V
–0.5 to 5.0
V
–0.5 to 6.0
V
3.0
V
VLDO2
Voltage range with respect to V2
Voltage range with respect to VSS
Voltage range with respect to VSS
Voltage range with respect to VSS
Voltage range with respect to VSS
Voltage with respect to VSS
3.0
V
RSTN
–0.5 to VLDO1 + 0.5
–0.5 to VLDO1 + 0.5
–0.5 to VLDO1 + 0.5
–0.5 to VLDO1 + 0.5
–0.5 to VLDO1 + 0.5
–0.5 to VLDO1 + 0.5
–0.5 to VLDO1 + 0.5
–0.5 to VLDO2 + 0.5
–0.5 to VLDO2 + 0.5
–0.5 to V1 + 0.5
–0.5 to V1 + 0.5
–0.5 to V3 + 0.5
20
V
FIELD, SPROT, PSH/BP/TP
CCBAT, CCPACK, CSBAT, CSPACK
CHG, DSG, PRE
OSCI, OSCO
XT1, XT2
V
V
V
V
Voltage with respect to VSS
V
SDO0
Voltage range with respect to VSS
Voltage range with respect to V2
Voltage range with respect to V2
Voltage range with respect to VSS
Voltage range with respect to VSS
Voltage range with respect to V2
Current source/sink
V
XT3, XT4
V
SDO2, SDI3, P-LAN
SDO0, SDI1
V
V
P1N, P2S, P2N
P3S, P3N, P4S, P4N
V
V
PRE, CHG, DSG, SPROT, FIELD,
PSH/BP/TP
mA
LED1/SEG1–LED5/SEG5
VLDO1, VLDO2
Current source/sink
Current source/sink
20
20
2
mA
mA
kV
ESD tolerance
JEDEC, JESD22-A114 human-body model, R = 1500 Ω, C =
100 pF
Lead temperature, sodlering
Total time < 3 seconds
300
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
All cell voltages equal,
four-cell operation
4.5
2.5
3.6
VSUP
Supply voltage—V1, V2, V3, V4
V
All cell voltages equal,
three-cell operation (V3 =
V4)
2.8
3.6
4.5
4.5
VStartup
VIN
Minimum startup voltage—V1, V2, V3, V4 All cell voltages equal
2.9
0
V
V
Input cell voltage range—V(n+1) – V(n), n
= 1, 2, 3, 4
CVLDO1
CVLDO2
CVn
VLDO 1 capacitor—VLDO1
VLDO 2 capacitor—VLDO2
Cell-voltage capacitor—Vn
2.2
2.2
1
10
10
47
47
μF
μF
μF
6
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© 2010–2011, Texas Instruments Incorporated
Product Folder Link(s): bq78PL116
bq78PL116
www.ti.com
SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
ELECTRICAL CHARACTERISTICS
TA = –40°C to 85°C (unless otherwise noted)
DC Characteristics
PARAMETER
TEST CONDITIONS
Acrtive mode, cells = 3.6 V
MIN
TYP
MAX
UNIT
IDD
Operating-mode current (at
V2)
400
μA
ISTBY
ISHIP
Standby-mode current (at V2) SMBCLK = SMBDAT = VSS, IBAT = 0,
cells = 3.6 V
185
85
μA
μA
Ship-mode current (at V2)
SMBCLK = SMBDAT = VSS, IBAT = 0,
cells = 3.6 V
Extreme cell undervoltage
shutdown current
All cells < 2.7 V and any cell < ECUV set
point
IECUV
VOL
1
μA
SPROT, LEDEN,
IOL < 4 mA
0
0.5
V
PSH/BP/TP(bq78PL116),
FIELD(bq78PL116)
(1)
VOH
SPROT, LEDEN,
PSH/BP/TP(bq78PL116),
FIELD(bq78PL116)
IOH < –4 mA
V
LDO1 – 0.1
V
V
V
VIL
SPROT, LEDEN,
PSH/BP/TP(bq78PL116),
FIELD(bq78PL116)
0.25 VLDO1
VIH
SPROT, LEDEN,
0.75 VLDO1
PSH/BP/TP(bq78PL116),
FIELD(bq78PL116)
(1) Does not apply to SMBus pins.
Voltage-Measurement Characteristics
TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Measurement range
Resolution
TEST CONDITIONS
MIN
TYP
MAX UNIT
2.75
4.5
V
<1
±3
mV
25°C
±7
Accuracy(1)
mV
0°C to 60°C
±10
180
Measurement temperature coefficient
160
200 µV/°C
(1) Voltage measurement calibrated at factory
Current-Sense Characteristics
PARAMETER
TEST CONDITIONS
Hardware gain = 9
10-mΩ sense resistor(1)
3-mΩ sense resistor (hardware gain = 13)
1-mΩ sense resistor(2)
TA = 25°C
MIN
–0.112
–11.2
–25.8
–112
TYP
MAX UNIT
Measurement range
Measurement range (SENSE1)
Measurement range (SENSE2)
Measurement range (SENSE3)
Input offset
0.1
10
V
A
25.8
100
A
A
±50
0.5
10
μV
μV/°C
μV
Offset drift
TA = 0°C to 60°C
Resolution
Full-scale error(3)
Hardware gain = 9
TA = 25°C
±0.1%
Full-scale error drift
TA = 0°C to 60°C
50
PPM/°C
(1) Default setting
(2) Measurement range beyond ±32,768 mA requires the use of an SBData IPScale Factor.
(3) After calibration. Accuracy is dependent on system calibration and temperature coefficient of sense resistor.
© 2010–2011, Texas Instruments Incorporated
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SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
www.ti.com
Coulomb-Count Characteristics(1) (2)
PARAMETER
TEST CONDITIONS
MIN
TYP
5
MAX UNIT
Resolution
nVh
Intergral nonlinearity
0.008%
±100(3)
Snap-to-zero (deadband)
μV
(1) Shares common input with current-sense section (CCBAT, CCPACK)
(2) After calibration. Accuracy is dependent on system calibration and temperature.
(3) Corresponds to ±10 mA with 10-mΩ sense resistor
Current-Sense (Safety) Characteristics(1)
over free-air temperature range (unless otherwise noted)
PARAMETER
Measurement range
TEST CONDITIONS
MIN
TYP
MAX UNIT
–0.312
0.312
42
V
Minimum threshold setting
Accuracy(1)
25
mV
mV
Short-circuit detection
–20
–4
20
Overcurrent detection, charge and discharge
Short-circuit detection
4
10
Resolution
Duration
mV
ms
Overcurrent detection, charge and discharge
Short-circuit detection
1.25
0.1
0.9
3.2
Overcurrent detection, charge and discharge
106
(1) After calibration. Accuracy is dependent on system calibration and temperature coefficient of sense resistor.
Internal Temperature-Sensor Characteristics(1)
over free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Measurement range
Resolution
Accuracy(1)
–30
85
°C
°C
°C
0.1
0° to 85°
±2
(1) After calibration. Accuracy is dependent on system calibration.
LDO Voltage Characteristics(1)
over free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Load = –200 μA
MIN
TYP
MAX UNIT
VLDO1
VLDO2
LDO1 operating voltage, referenced to
VSS
2.425
2.5 2.575
V
LDO2 operating voltage, referenced to V2 Load = –2 mA
2.425
2.5 2.575
V
(1) After calibration. Accuracy is dependent on system calibration.
External Temperature-Sensor Characteristics
over free-air temperature range (unless otherwise noted)
PARAMETER
Measurement range
TEST CONDITIONS
MIN
TYP
MAX UNIT
–40
90
°C
°C
Resolution
0.2
±2
±2
50
25°
Accuracy(1)
°C
0° to 85°
Source current
30
70
µA
(1) After calibration. Accuracy is dependent on system calibration.
8
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Product Folder Link(s): bq78PL116
bq78PL116
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SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
SMBus Characteristics(1)
over free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
0
TYP
MAX
0.8
5.5
0.4
10
UNIT
V
VIL
VIH
VOL
CL
Input low voltage
Input high voltage
Output low voltage
Capacitance, each I/O pin
2.1
0
V
350-µA sink current
TA = 25°C
V
pF
SCLK nominal clock
frequency
fSCL
10
100
100
kHz
VBUS 5 V nominal
VBUS 3 V nominal
13.3
2.4
45.3
6.8
Pullup resistors for SCLK,
SDATA
(2)
RPU
kΩ
(1) SMBus timing and signals meet the SMBus 2.0 specification requirements under normal operating conditions. All signals are measured
with respect to PACK-negative.
(2) Pullups are typically implemented external to the battery pack and are selected to meet SMBus requirements.
PowerLAN Characteristics(1)(2)(3)
over free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CL
Load capacitance
SDI1, SDI3, SDO0, SDO2, P-LAN
100
pF
SDI1
0.8 VLDO1
0.8 VLDO2
0.9 VLDO1
0.9 VLDO2
VIH
Input logic high
Output logic high
Input logic low
Output logic low
V
V
V
V
SDI3
SDO0, SDO2
P-LAN
VOH
SDI1
0.2 VLDO1
0.2 VLDO2
0.1 VLDO1
0.1 VLDO2
500
VIL
SDI3
SDO0, SDO2
P-LAN
VOL
tr(I)
Input rise time
Input fall time
Output rise time
Output fall time
SDI1, SDI3
SDI1, SDI3
SDO0, SDO2, P-LAN
SDO0, SDO2, P-LAN
ns
ns
ns
ns
tf(I)
500
tr(O)
tf(O)
30
30
50
50
(1) Values specified by design and are over the full input voltage range and the maximum load capacitance.
(2) The SDI and SDO pins are ac-coupled from the cell circuits downstream and upstream, respectively. The limits specified here are the
voltage transitions which must occur within the SDI and SDO rise-and fall-time specifications.
(3) Coupling capacitor between PowerLAN pins is 1000 pF. This value is specified by design.
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SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
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PowerPump Characteristics(1)
over free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
0.1 V1
0.1 V1
0.1 V1
0.1 V1
UNIT
V
VOH
VOL
VOH
VOL
VOH
VOL
VOH
VOL
IOH
High drive, P2S
IOUT = –10 µA
IOUT = 200 µA
IOUT = –200 µA
IOUT = 10 µA
IOUT = –10 µA
IOUT = 200 µA
IOUT = –200 µA
IOUT = 10 µA
0.9 V1
Low drive, P2S
V
High drive, P1N, P2N
Low drive, P1N, P2N
High drive, P3S, P4S
Low drive, P3S, P4S
High drive, P3N, P4N
Low drive, P1N, P2N
0.9 V1
0.9 V1
0.9 V1
V
V
V
V
V
V
Source current, P2S, P3S,
P4S
VOH = V1 – 0.8 V
250
µA
µA
IOL
Sink current, P1N, P2N,
P3N, P4N
VOH = V1 + 0.2 V
–250
tr
Signal rise time
Signal FET fall time
Frequency
CLoad = 300 pF
CLoad = 300 pF
100
100
ns
ns
tf
fP
D
204.8
33%
67%(2)
kHz
PWM duty cycle
P1N, P2N, P3N, P4N
P2S, P3S, P4S
(1) All parameters representative of a typical cell voltage of 3.6 V.
(2) Effective duty cycle is 33%. PxS pins are P-channel drives and MOSFET on-time is (1 – D).
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RPRE
+
PACK+
Level-Shift Circuits
SDI1
SDO2
SDI3
SDO0
VLDO1
V2
V1
CELL 6
RSTN
P-LAN
CELL 5
SPROT
V4
V3
bq78PL116
PowerLAN
Gateway Battery
Management
Controller
5
CELL 4
CELL 3
CELL 2
CELL 1
LED1–LED5
VLDO2
V2
EFCIC
EFCID
V1
SMBCLK
SMBDAT
XT1–XT4
Temperature
Sensor (typ.)
CRFI
One of 4 external
sensors shown
–
PACK–
Typical six-cell configuration shown.
Additional cells added via PowerLAN connection.
Some components omitted for clarity.
RSENSE
S0342-04
Figure 4. bq78PL116 Simplified Example Circuit Diagram
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FEATURE SET
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Primary (First-Level) Safety Features
The bq78PL116 implements a breadth of system protection features which are easily configured by the
customer. First-level protections work by controlling the MOSFET switches. These include:
•
•
•
•
•
•
•
•
Battery cell over/undervoltage protection
Pack over/undervoltage protection
Charge and discharge overcurrent protection
Short-circuit protection
External MOSFET control inputs (EFCIx) with programmable polarity
Up to four external temperature inputs for accurate cell and MOSFET monitoring
Watchdog timer protection
Brownout detection and protection against extreme pack undervoltage
Secondary (Second-Level) Safety Features
The bq78PL116 can detect more serious system faults and activate the SPROT pin, which can be used to open
an in-line chemical fuse to permanently disable the pack. Secondary optional features include
•
•
Fully independent of first-level protections
SmartSafety algorithms for early detection of potential faults
–
–
–
Temperature abnormalities (extremes, rate of change)
Cell imbalance exceeds safety limits
Impedance rise due to cell or weld strap fault
•
•
•
•
•
MOSFET failure or loss of MOSFET control
Safety overvoltage, pack and cell
Safety overtemperature, limits for both charge and discharge
Safety overcurrent, charge and discharge
Failed current measurement, voltage measurement, or temperature measurement
Charge Control Features
•
•
Meets SMBus 1.1 and Smart Battery System (SBS) Specification 1.1 requirements
Active cell balancing using patented PowerPump technology, which eliminates unrecoverable capacity loss
due to normal cell imbalance
•
•
•
•
•
•
•
Simultaneous, synchronous measurement of all cell voltages in a pack
Simultaneous, synchronous measurement of pack current with cell voltages
Reports target charging current and/or voltage to an SBS Smart Charger
Reports the chemical state-of-charge for each cell and pack
Supports precharging and zero-volt charging with separate MOSFET control
Programmable, Chemistry-specific parameters
Fault reporting
Gas Gauging
•
The bq78PL116 accurately reports battery cell and pack state-of-charge (SOC). No full charge/discharge
cycle is required for accurate reporting.
•
•
State-of-charge is reported via SMBus and optional display.
18-bit integrating delta-sigma ADC coulomb counter
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Display Types
•
The bq78PL116 drives a three- to five-segment LED display in response to a pushbutton (LEDEN) input
signal. Each LED pin can sink up to 10 mA.
•
•
The bq78PL116 drives a three- to five-segment static liquid-crystal display.
The bq78PL116 drives a three- to five-segment electronic paper display. An external 15-V voltage source is
required. E Ink Corporation supplies this type of display.
The display type is selected via the parameter set.
Lifetime Logging (Readable via SMBus)
•
•
•
•
•
•
•
Lifetime delivered ampere-hours
Last discharge average
Lifetime maximum power
Maximum/minimum temperature
Maximum/minimum pack voltage
Maximum/minimum cell voltage in a pack
Maximum charge and discharge currents
Power Modes
•
Normal Mode: The bq78PL116 performs measurements and calculations, makes decisions, and updates
internal data approximately once per second. All safety circuitry is fully functional in this mode.
•
Standby Mode: The bq78PL116 performs as in normal mode, but at a dramatically reduced rate to lower
power consumption at times when the host computer is inactive or the battery system is not being used. All
safety circuitry remains fully functional in this mode.
•
•
Ship Mode: The bq78PL116 disables (opens) all the protection MOSFETs, and continues to monitor
temperature and voltage, but at a reduced measurement rate to dramatically lower power consumption.
Environmental data is saved in flash as a part of the historical record. Safety circuitry is disabled in this mode.
The device does not enter this power state as a part of normal operation; it is intended for use after factory
programming and test. Entry occurs only after a unique SMBus command is issued. Exit occurs when the
SMBus lines return to an active state.
Extreme Cell Undervoltage (ECUV) Shutdown Mode: In this mode, the bq78PL116 draws minimal current
and the charge and discharge protection MOSFETs are disabled (opened). The precharge MOSFET remains
enabled when a charge voltage is present. Safety circuitry is disabled in this mode. The device does not enter
this mode as a part of normal operation; it enters this state during extreme cell undervoltage conditions
(ECUV). The ECUV threshold is programmable between 2.5 V and 2.8 V for even series cell applications and
2.7 V to 2.8 V for odd series cell applications.
OVERCURRENT
PROTECTION
STATE
Active
ENTRY CONDITION
EXIT CONDITION
Normal operation as determined by firmware
Firmware directed to the following operating
modes
Fully active
No load current flowing for predetermined
time
Standby
Ship
Fully active
Not active
Load activity
Protected SMBus command
SMBus becomes active
Extreme cell
undervoltage
Not active (precharge
enabled)
Vcell charge above ECUV recovery threshold
(2.9 V/cell typical)
Enabled when Vcell < ECUV
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OPERATION
The bq78PL116 battery-management controller serves as a master controller for a Li-Ion battery system
consisting of up to 16 cells in series. Any number of cells may be connected in parallel; other system or safety
issues limit the number of parallel cells. The bq78PL116 provides extraordinarily precise state-of-charge gas
gauging along with first- and second-level pack safety functions. Voltage and current measurements are
performed synchronously and simultaneously for all cells in the system, allowing a level of precision not
previously possible in battery management. Temperature is measured by up to four additional external
temperature sensors. Coulomb counting is captured continuously by a dedicated 18-bit integrating delta-sigma
ADC in the bq78PL116. The CPU in the bq78PL116 is also responsible for system data calculations and
communicating parameters via the SMBus interface.
PowerLAN Communication Link
PowerLAN technology is Texas Instruments’ patented serial network and protocol designed specifically for
battery management in a multicell system environment. The PowerLAN link is used to initiate and report
measurements of cell voltage and temperature, and control cell balancing. The bq78PL116 serves as the master
controller of the PowerLAN link and can interface to multiple bq76PL102 dual-cell battery monitors, which
measure and balance additional cells. The bq78PL116 monitors the first three or four cells, and bq76PL102s can
be added to monitor more series cells.
The PowerLAN link isolates voltages from adjacent bq76PL102 devices to permit high-voltage stack assembly
without compromising precision and accuracy. The PowerLAN link is expandable to support up to 16 cells in
series. Each bq76PL102 handles voltage and temperature measurements, as well as balancing for two cells. The
PowerLAN link provides high ESD tolerance and high immunity to noise generated by nearby digital circuitry or
switching currents. Each bq76PL102 has both a PowerLAN input and PowerLAN output: Received data is
buffered and retransmitted, permitting high numbers of nodes without loss of signal fidelity. Signals are
capacitor-coupled between nodes, providing dc isolation.
Safety
Unique in the battery-management controller market, the bq78PL116 simultaneously measures voltage and
current using independent and highly accurate delta-sigma ADCs. This technique removes virtually all systemic
noise from measurements, which are made during all modes of battery operation: charge, discharge, and rest.
The bq78PL116 also directs all connected bq76PL102 dual-cell battery monitors to measure each cell voltage
simultaneously with the bq78PL116 measurements. Battery impedance and self-discharge characteristics are
thus measured with an unprecedented level of accuracy in real time. The bq78PL116 applies this precise
information to SmartSafety algorithms to detect certain anomalies and conditions which may be indicative of
internal cell faults, before they become serious problems.
The bq78PL116 uses its enhanced measurement system to detect system faults including cell under- and
overvoltage, cell under- and overtemperature, system overvoltage, and system overcurrent. First-level safety
algorithms first attempt to open the MOSFET safety switches. If this fails, second-level safety algorithms activate
the SPROT output, normally used to open a fuse and provide permanent, hard protection for the systems.
External MOSFET control inputs with programmable polarity can also be used to operate the safety MOSFETs
under control of user supplied circuitry. The bq78PL116 continuously monitors these inputs. If any MOSFET fails
to open when commanded; the 2nd level safety algorithms also activate the SPROT output. All first- and
second-level safety algorithms have fully programmable time delays to prevent false triggering.
Cell Balancing
Patented PowerPump cell balancing technology drastically increases the useful life of battery packs by
eliminating the cycle life fade of multi-cell packs due to cell imbalance. PowerPump technology efficiently
transfers charge from cell to cell, rather than simply bleeding off charging energy as heat as is typically done with
resistive-bleed balancing circuits. Balancing is configurable and may be performed during any battery operational
modes: charge, discharge, or rest. Compared to resistive bleed balancing, virtually no energy is lost as heat. The
actual balance current is externally scalable and can range from 10 mA to 1 A (100 mA typical) depending on
component selection and system or cell requirements.
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A variety of techniques, such as simple terminal voltage, terminal voltage corrected for impedance and
temperature effects, or state-of-charge balancing, is easily implemented by the bq78PL116. By tracking the
balancing required by individual cells, overall battery safety is enhanced, often allowing early detection of soft
shorts or other cell failures. Balancing is achieved between all cells within the pack as dynamically determined by
the bq78PL116.
The bq78PL116 supports the following configurable cell-balancing features:
•
Turbo-pump mode. When enabled, this allows 60%–70% pump availability when there are no active safety
events and current is not flowing. While in turbo-pump mode, temperature rate-of-rise features are not
available.
•
•
•
Option to disable cell balancing during discharge
Option to disable cell balancing during charge
Test mode operation that allows for convenient production-line testing of PowerPump circuitry
Outputs
Charge Control
The CHG and PRE outputs are ordinarily used to drive MOSFET transistors controlling charge to the cell stack.
Charge or precharge mode is selected based on the present cell voltage compared to the user-definable cell
precharge, undervoltage, and temperature thresholds. When below these limits, the PRE signal is active and the
CHG signal is inactive. This turns on the precharge MOSFET and is used to charge a depleted system through a
current-limiting series resistor. When all cell voltages are above the limit and the temperature is above the charge
temperature minimum, then the CHG output also becomes active and enables the charge MOSFET to turn on,
providing a high-current path between charger and battery cells.
The CHG and PRE MOSFET control outputs are both disabled (low) when any cell reaches the safety cutoff limit
or temperature threshold. During active charging modes (and above cell voltage thresholds), the discharge
MOSFET is also enabled to avoid excessive heating of the body diode. Similarly, the charge MOSFET is active
during discharge, provided current flow is in the correct direction and no safety violations are present.
The CHG and PRE outputs are intended to drive buffer transistors acting as inverting level shifters.
Discharge Control
The DSG output operates similarly to control-system discharging. It is enabled (high) by default. If a cell voltage
falls below a programmable threshold, or excessive current or other safety related fault is sensed, the DSG
output is disabled (low) to prevent damage to the cells.
All facets of safely charging and discharging the cell stack are controlled by user-definable parameters which
provide precise control over MOSFET states. Both system and cell over- and undervoltage limits are provided, as
well as programmable hysteresis to prevent oscillation. Temperature and current thresholds are also provided,
each with independent timers to prevent nuisance activations.
The DSG output is intended to drive a buffer transistor acting as an inverting level-shifter.
Display
The bq78PL116 shows state-of-charge indication on LED, static liquid crystal, and electronic paper displays or
EPDs in a bar-graph-type format. The parameter set allows selection of display type and configuration.
PSH/BP/TP is a multifunction pin. In LED display mode, PSH serves as an input that monitors for closure of a
state-of-charge indicator (SOCi) push-button switch. In LCD mode, this pin is used to drive the LCD backplane.
In EPD mode, this pin drives the top plane common signal of the display.
In LED display mode, the signals LED1/SEG1–LED5/SEG5 are current-sinking outputs designed to drive
low-current LEDs.
In LCD and EPD modes, the LED1/SEG1–LED5/SEG5 pins drive the active segments through external buffer
transistors. In EPD mode, the FIELD pin drives the display background field.
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Electronic paper displays require an external power supply, typically 15 V, to power the display. In EPD, mode
the bq78PL116 strobes the display outputs for a user- programmable period of milliseconds to drive an external
voltage multiplier or charge pump to the required display supply voltage. The display segments are then updated
in a manner that ensures the required 0-Vdc segment voltage offset is maintained and keeps the external power
supply at its nominal voltage.
Inputs
Current Measurement
Current is monitored by four separate ADCs. All use the same very low-value sense resistor, typically 10, 3, or 1
milliohms in series with the pack negative connection. CCBAT and CCPACK connections to the sense resistor
use an R/C filter for noise reduction. (CSBAT and CSPACK are direct connections used for secondary safety).
When configured to use a 1-milliohm sense resistor, the maximum available pack capacity increases to 327 Ah
from 32.7 Ah.
A 14-bit delta-sigma ADC is used to measure current flow accurately in both directions. The measurements are
taken simultaneously and synchronously with all the cell voltage measurements, even those cells measured by
bq76PL102 dual-cell battery monitors.
Coulomb Counting
A dedicated coulomb counter is used to measure charge flow with 18-bit precision in both directions by a
calibrated, integrating delta-sigma ADC. This allows the bq78PL116 to keep very accurate state-of-charge (SOC)
information and battery statistics. A small deadband is applied to further reduce noise effects. The coulomb
counter is unique in that it continues to accumulate (integrate) current flow in either direction even as the rest of
the internal microcontroller is placed in a very low power state, further lowering power consumption without
compromising system accuracy.
Safety Current
Two additional ADCs are used to directly monitor for overcurrent or short-circuit current conditions, independently
of the internal function. This provides a direct and rapid response to insure pack integrity and safe operation by
opening the appropriate MOSFETs. These functions are implemented in hardware, and do not require firmware
for functionality.
Voltage Measurement
Voltage measurement is performed by four independent delta-sigma ADCs which operate simultaneously and
are triggered synchronously so that all voltages are read at precisely the same moment. The bq78PL116
coordinates the attached bq76PL102 dual-cell battery monitors so they also perform their cell voltage
measurements in sync with the bq78PL116 voltage and current measurements. Voltage measurements are
converted with better than 1 mV of resolution, providing superior accuracy. One-ADC-per-cell technology means
that voltage is also measured simultaneously with current, permitting accurate, real-time cell impedance
calculation during all operating conditions. This technique also provides greatly enhanced noise immunity and
filtering of the input signal without signal loss.
Temperature Measurement
XT1–XT4 are dedicated temperature-sensor inputs. Each external sensor consists of a low-cost silicon diode
(dual diode in one package is recommended) and capacitor combination. The bq78PL116 can report all four of
these temperatures individually. The bq78PL116 firmware uses the internal temperature sensor of the device for
board temperature measurements.
EFCIx
The external MOSFET control inputs are for user control of MOSFETs based on external circuitry and conditions.
The polarity of the input signal is user-programmable. These pins can be used to force the protection MOSFETs
to an OFF state.
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COMMUNICATIONS
SMBus
The bq78PL116 uses the industry-standard Smart Battery System’s two-wire System Management Bus (SMBus)
communications protocol for all external communication. SMBus version 1.1 is supported by the bq78PL116, and
includes clock stretching, bus fault time-out detection, and optional packet error checking (PEC). For additional
information, see the www.smbus.org and www.sbs-forum.org Web sites.
Smart Battery Data (SBData)
The bq78PL116 supports Smart Battery System's (SBS) Smart Battery Data Specification 1.1. See the
SBS/SMBus site at www.sbs-forum.org for further information regarding these specifications.
This SBS Data (SBData) specification defines read/write commands for accessing data commonly required in
laptop computer applications. The commands are generic enough to be useful in most applications.
The bq78PL116 provides a wealth of data beyond the standard set of SBData (0x00 - 0x23) through Extended
SBData Commands. See the following table for a listing of the SBData commands and the default set of
Extended SBData (0x3C - 0x58). SBData command locations 0x80 and 0x81 are used to implement some of the
features unique to the bq78PL116. Refer to the bq78PL116 Technical Reference Manual Document for additional
details on compliance to SBData and how to take advantage of the data and controls specific to bq78PL116.
THERMAL PAD
The large pad on the bottom of the package is square, located in the center, and is 5.3 ±0.05 mm per side.
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SBS Standard Data Parameter List (Abridged)(1)
Command
00
Data Type
Description
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (Boolean)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Read word (unsigned)
Reserved
Manufacturer Access
01
Remaining Capacity Alarm Level
Remaining Time Alarm Level
Battery Mode
02
03
04
At Rate value used in AtRate calculations – NOT SUPPORTED
At Rate Time to Full – NOT SUPPORTED
At Rate Time to Empty – NOT SUPPORTED
At Rate OK – NOT SUPPORTED
Pack Temperature (maximum of all individual cells)
Pack Voltage (sum of individual cell readings)
Pack Current
05
06
07
08
09
0A
0B
0C
0D
0E
0F
Average Pack Current
Max Error
Relative State of Charge
Absolute State of Charge
Remaining Pack Capacity
Full Charge Capacity
10
11
Run Time to Empty
12
Average Time to Empty
Average Time to Full
13
14
Charging Current
15
Charging Voltage
16
Battery Status
17
Cycle Count
18
Design Capacity
19
Design Voltage
1A
1B
1C
1D–1F
20
Specification Information
Manufacture Date
Serial Number
Read block (string)
Read block (string)
Read block (string)
Read block (string)
Reserved
Pack Manufacturer Name (31 characters maximum)
Pack Device Name (31 characters maximum)
Pack Chemistry
21
22
23
Manufacturer Data
24–2E
2F
R/W Block
Optional Manufacturer Function 5
30–3B
3C
3D
3E
3F
Reserved
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
Optional Manufacturer Option 4 (Vcell 1)
Optional Manufacturer Option 3 (Vcell 2)
Optional Manufacturer Option 2 (Vcell 3)
Optional Manufacturer Option 1 (Vcell 4)
Extended Data (Vcell 5)
40
41
Extended Data (Vcell 6)
42
Extended Data (Vcell 7)
43
Extended Data (Vcell 8)
44
Extended Data (Vcell 9)
(1) Parameters 0x00–0x3F are compatible with the SBDATA specification.
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Command
45
Data Type
Description
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
R/W word (unsigned)
Extended Data (Vcell 10)
Extended Data (Vcell 11)
Extended Data (Vcell 12)
Extended Data (Vcell 13)
Extended Data (Vcell 14)
Extended Data (Vcell 15)
Extended Data (Vcell 16)
46
47
48
49
4A
4B
4C
4D
4E
4F
Extended Data (Temp 0 – Intenal)
Extended Data (Temp 1 – Extenal)
Extended Data (Temp 2 – Extenal)
Extended Data (Temp 3 – Extenal)
50
Extended Data (Temp 4 – Extenal)
51
Extended Data (Safety Status)
52
Extended Data (Permanent Fail Status)
Extended Data (Charge Status)
53
54
Extended Data (Lifetime Maximum Pack Voltage)
Extended Data (Lifetime Maximum Cell Voltage)
Extended Data (Lifetime Maximum Charge Current)
Extended Data (Lifetime Maximum Discharge Current)
Extended Data (Lifetime Maximum Temperature)
Extended Command (Device Status)
55
56
57
58
80
81
Extended Command (Device Command)
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REFERENCE SCHEMATICS
K C A P S C
K C A P C C
0 1
7
E R P
3
b
t a
9 4
8 2
G H C
C / N
C / N
C / N
1
G S D
7 2
6 2
2
T O R P S
0 3
T A B C C
T A B S C
6
9
Figure 5. Typical 3S Application Schematic
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Table 2. Bill of Materials for 3S Application
Qty
Reference
Value
Description
Size
Manufacturer
Mfg Part No.
Standard
Capacitor SMT
Ceramic X7R +/-10% 603
50V
5
C10 C12-13 C16 C22 0.1uF
C11 C18 C20 C23-24 10uF
Standard
Capacitor SMT
Ceramic X5R +/-10% 603
6.3V
5
3
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Capacitor SMT
Ceramic X7R +/-10% 603
25V
C1-3
0.01uF
22uF
Capacitor SMT
Ceramic Y5V +/-20% 805
10V
3
C4-6
Capacitor SMT
Ceramic X7R +/-10% 603
50V
4
C7 C17 C19 C21
C8-9 C14-15 C25
3300pF
1000pF
1.0M
Capacitor SMT
Ceramic X7R +/-10% 603
50V
5
R1 R7-8 R11 R15
R19 R23 R25 R28
R36-38
Resistor SMT 1/10W
+/-5%
12
603
Resistor SMT 1/10W
+/-5%
2
2
R17-18
30K
603
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Resistor SMT 1/10W
+/-5%
R2 R16
R26 R35
R27 R29
200K
100K
4.7K
100
603
Resistor SMT 1/10W
+/-5%
2
603
Resistor SMT 1/10W
+/-5%
2
603
R3 R6 R12-14 R20
R22 R30-33
Resistor SMT 1/10W
+/-5%
11
2
603
Resistor SMT 1/10W
+/-5%
R4 R34
R5 R10 R21 R24
R9
10K
603
Resistor SMT 1/10W
+/-5%
4
20K
603
Resistor SMT +/-5%
1W
1
100
603
Resistor SMT +/-1%
2512
1
RSENSE
D1-4
0.01
1W +/-100ppm/°C
Schottky Rectifier
Diode 20V IFSM>2A
4
Vf=385mV
4.7uH
SOD-123
Inductor SMT
Shielded Isat=2.0A
4.9mm x 4.9mm x
2.0mm
NRS5020T4R7MMG
J
2
5
1
L1-2
Taiyo Yuden
Standard
LED1-5
SOCI
Green LED
603
Standard
Momentary
Pushbutton
50mA
Standard
Standard
Dual Diode (Series
Arrangement)
3
4
T1-3
Q1-4
SOT-23
SOT-23
Fairchild
Infineon
MMBD4148SE
BSS138N
N-Channel MOSFET
2.5Vgs rated,
Vds>30V
N-Channel JFET
Idss>0.2mA,
Vgs<-1.5V
Vdg =
-40V
2
Q5-6
SOT-23
Fairchild
MMBFJ201
9.7 mOhm MOSFET N-Channel
1
2
Q7
SON 5mm x 6mm
6-TSOP
Texas Instruments
CSD17307Q5A
AO6604
RDSon
SMT 30Vds
MOSFET N/P
Complementary Pair
Q9-10
Alpha & Omega
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Table 2. Bill of Materials for 3S Application (continued)
Qty
Reference
Q11-12
Value
Description
Size
Manufacturer
Mfg Part No.
FDS6673
MOSFET P-Channel
SMT -30VDS
2
SOIC-8
QFN48
Fairchild
PowerLAN Master
Gateway Battery
Management
1
U1
Texas Instruments
Standard
bq78PL116RGZR
Controller
Common Anode
Zener Diode Pair
300mW
3
Z1-2 Z5
5.6V
SOT-23
Standard
2
1
Z3-4
F1
12V
Zener Diode 500mW SOD-123
Diodes, Inc
Sony
BZT52C12-13-F
SFH-1212A
Chemical Fuse For
2-3 Cells In Series
12 Amp
BATTERY+
BATTERY- PACK+
PACK-
4
2 Pin Connector
Standard
Standard
1
1
CELLS
HOST
4 Pin Connector
5 Pin Connector
Standard
Standard
Standard
Standard
22
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SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
K C A P S C
0 1
K C A P C C
7
E R P
3
b a t
9 4
G H C
C /
C /
C /
N
N
N
1
8 2
7 2
6 2
G S D
T O R P S
2
0 3
T A B C C
T A B S C
6
9
Figure 6. Typical 16S Application Circuit – bq78PL116 and FETs (Sheet 1 of 4)
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N A L P
5 O D S
C /
C /
C /
N
N
N
C /
C /
C /
N
N
N
3
3
0 1
1 1
7 1
1
0 1
1 1
7 1
1
B A T
S S V
B A T
S S V
Figure 7. Typical 16S Application Circuit – bq76PL102 for Cells 5–8 (Sheet 2 of 4)
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SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
5 O D S
7 O D S
C /
C /
C /
N
N
N
C /
C /
C /
N
N
N
3
3
0 1
1 1
7 1
1
0 1
1 1
7 1
1
B A T
S S V
B A T
S S V
Figure 8. Typical 16S Application Circuit – bq76PL102 for Cells 9–12 (Sheet 3 of 4)
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7 O D S
C /
C /
C /
N
N
N
C /
C /
C /
N
N
N
3
3
0 1
1 1
7 1
1
0 1
1 1
7 1
1
B A T
S S V
B A T
S S V
Figure 9. Typical 16S Application Circuit – bq76PL102 for Cells 13–16 (Sheet 4 of 4)
Table 3. Bill of Materials for 16S Application
Qty
Reference
Value
Description
Size
Manufacturer
Mfg Part No.
PowerLAN Dual Cell
Monitor
6
U2-7
U1
QFN-16
QFN16
QFN48
Texas Instruments
bq76PL102RGTT
PowerLAN Master
Gateway Battery
Management
1
QFN-48
10uF
Texas Instruments
Standard
bq78PL116RGZR
Controller
C11 C18 C20 C23-24
C26 C48-50 C56-58
C69 C72 C74-77
Capacitor SMT
Ceramic X5R +/-10% 603
6.3V
24
Standard
C90-92 C99-101
C1-3 C30 C32 C35
C39 C63-64 C78-81
C102-104
Capacitor SMT
Ceramic X7R +/-10% 603
25V
16
12
5
0.01uF
1000pF
Standard
Standard
Standard
Standard
Standard
Standard
C8-9 C14-15 C25
C46 C55 C68 C73
C89 C96 C98
Capacitor SMT
Ceramic X7R +/-10% 603
50V
Capacitor SMT
Ceramic X7R +/-10% 603
50V
C10 C12-13 C16 C22 0.1uF
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Qty
SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
Table 3. Bill of Materials for 16S Application (continued)
Reference
Value
Description
Size
Manufacturer
Mfg Part No.
C7 C17 C19 C21
C27-29 C31 C34 C36
C40-41 C43-44
C51-53 C59-60 C62
C65 C67 C70-71
C82-83 C86-87
C93-94
Capacitor SMT
Ceramic X7R +/-10% 603
50V
30
3300pF
Standard
Standard
C4-6 C33 C37-38
C42 C45 C47 C54
C61 C66 C84-85 C88
C95
Capacitor Ceramic
SMT Y5V +/-20%
10V
16
24
22uF
100
805
603
Standard
Standard
Standard
Standard
R3 R6 R12-14 R20
R22 R30-33 R39 R42
R45 R48 R51 R53
R58 R61 R64-65 R69
R72 R75
Resistor SMT 1/10W
+/-5%
Resistor SMT 1/10W
+/-5%
2
2
R4 R34
10K
603
603
Standard
Standard
Standard
Standard
Resistor SMT 1/10W
+/-5%
R26 R35
100K
R1 R7-8 R11 R15
R19 R23 R25 R28
R36- 38
Resistor SMT 1/10W
+/-5%
12
1.0M
20K
603
Standard
Standard
R5 R10 R21 R24
R40-41 R43-44
R46-47 R49-50 R52
R54-57 R59-60
R62-63 R66- 68
R70-71 R73-74
R76-77
Resistor SMT 1/10W
+/-5%
30
603
Standard
Standard
Resistor SMT 1/10W
+/-5%
2
2
R2 R16
R17-18
R9
200K
30K
603
603
603
603
2512
Standard
Standard
Standard
Standard
Standard
Taiyo Yuden
Standard
Standard
Standard
Standard
Standard
Standard
Resistor SMT 1/10W
+/-5%
Resistor SMT +/-5%
1W
1
3K
Resistor SMT 1/10W
+/-5%
2
R27 R29
RSENSE
L1-15
4.7K
Resistor SMT +/-1%
1W +/-100ppm/°C
1
0.01
Inductor SMD
Shielded Isat=2.0A
4.9mm x 4.9mm x
2.0mm
NRS5020T4R7MMG
J
15
4
4.7uH
Vds > 80V
N-Channel MOSFET,
2.5Vgs Rated
Q1-4
SOT-23
Standard
General Purpose
N-Channel JFET
Amplifier
Idss=0.2
to 1.0mA
2
Q5-6
SOT-23
Fairchild
MMBFJ201
MOSFET N-Channel
20Vgs
1
15
2
Q7
100 Vds
+/-8Vgs
-100 Vds
500mA
D2PAK
6-TSOP
D2PAK
Standard
Standard
AO6604
Standard
MOSFET N/P
Complementary Pair
Q8-10 Q13-24
Q11-12
Alpha & Omega
Standard
MOSFET P-Channel
20Vgs
Schottky Rectifier
Diode 20V
30
4
D1-30
T1-4
SOD-123
SOT-23
603
Fairchild
Fairchild
Standard
MBR0520L
MMBD4148SE
Standard
Dual Diode
Green/25 Green Diffused LED
mA 1.6mm x 0.8mm SMT
5
LED1-5
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Table 3. Bill of Materials for 16S Application (continued)
Qty
Reference
Z1 Z2
Value
Description
Size
Manufacturer
Mfg Part No.
Standard
Common Anode
Zener Diode Pair
300mW
2
5.6VDC
SOT-23
Standard
Zener Diode 500mW
12V
3
1
Z3-5
500mW
50mA
SOD-123
Standard
Standard
Standard
Standard
Tactile Momentary
Pushbutton Thru-Hole
SOCI
1
1
3
HOST
J1
Header
Header
Header
6 Position
5 Position
4 Position
Standard
Standard
Standard
Standard
Standard
Standard
1.0 Amp
3.0A
J2-4
BATTERY+
BATTERY- PACK+
PACK-
4
30 Amps
Header
2 Position
Standard
Standard
28
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SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
100Ω
1µF 25V
1µF 25V
1µF 25V
1
1
1
3
2 3
2 3
2
BAT54STA
BAT54STA
1µF 25V
BAT54STA
1µF 25V
4.7µF 25V
1MΩ
1MΩ 1MΩ 1MΩ 1MΩ 1MΩ 1MΩ
TPC
FIELD
SEG1
SEG2
SEG3
SEG4
SEG5
1
2
3
4
5
6
7
NTS4001-
NT1G
bq78PL116
PSH/BP/TP
39
V4
31
29
32
33
34
35
NTS4001-
NT1G
1MΩ
1MΩ
1MΩ
1MΩ
1MΩ
1MΩ
FIELD
LED1/SEG1
LED2/SEG2
LED3/SEG3
LED4/SEG4
NTS4001NT1G
XF2L-0735-1/
OMRON/ZIFF
E-Ink SDC3
PET 5-Bar,
Part Number:
520-1285
NTS4001NT1G
NTS4001NT1G
NTS4001NT1G
NTS4001NT1G
36
8
LED5/SEG5
VLDO1
TAB
49
Vss
48
S003
NOTE: For reference only. Actual display used may require different operating voltage. Consult with display vendor.
Figure 10. Reference Schematic (Electronic-Paper Display Connections)
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1MΩ
1MΩ 1MΩ 1MΩ 1MΩ 1MΩ
7
8
9
S6
S7
S8
1
2
3
4
5
6
NTS4001-
NT1G
BP
S1
S2
bq78PL116
44
To +ve
of Cell 2
V2
31
32
33
34
35
S3
S4
S5
PSH/BP/TP
LED1/SEG1
LED2/SEG2
LED3/SEG3
LED4/SEG5
NTS4001-
NT1G
1MΩ
1MΩ
1MΩ
1MΩ
1MΩ
NTS4001NT1G
NTS4001NT1G
NTS4001NT1G
NTS4001NT1G
36
8
LED5/SEG5
VLDO1
Vss
TAB
49
48
S004
NOTE: For reference only. Actual display used may require different operating voltage. Consult with display vendor.
Figure 11. Reference Schematic (LCD Connections)
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SLUSAB8B –OCTOBER 2010–REVISED FEBRUARY 2011
REVISION HISTORY
Changes from Revision A (October 2010) to Revision B
Page
•
•
Revised PowerLAN Characteristics table ............................................................................................................................. 9
Changed Ah values in Current Measurement paragraph ................................................................................................... 16
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PACKAGE OPTION ADDENDUM
www.ti.com
6-Jan-2011
PACKAGING INFORMATION
Status (1)
Eco Plan (2)
MSL Peak Temp (3)
Samples
Orderable Device
Package Type Package
Drawing
Pins
Package Qty
Lead/
Ball Finish
(Requires Login)
BQ78PL116RGZR
BQ78PL116RGZT
ACTIVE
ACTIVE
VQFN
VQFN
RGZ
RGZ
48
48
2500
250
TBD
TBD
Call TI
Call TI
Call TI
Call TI
Purchase Samples
Request Free Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
IMPORTANT NOTICE
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