CC2564CRVMR [TI]
具有基本速率 (BR)、增强数据速率 (EDR) 和低功耗 (LE) 模块的 Bluetooth® 4.2 | RVM | 76 | -40 to 85;型号: | CC2564CRVMR |
厂家: | TEXAS INSTRUMENTS |
描述: | 具有基本速率 (BR)、增强数据速率 (EDR) 和低功耗 (LE) 模块的 Bluetooth® 4.2 | RVM | 76 | -40 to 85 电信 电信集成电路 |
文件: | 总55页 (文件大小:1343K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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CC2564C
ZHCSFX3A –APRIL 2016–REVISED NOVEMBER 2016
CC2564C 双模 Bluetooth® 控制器
1 器件概述
1.1 特性
1
• TI 的单片 蓝牙®解决方案支持蓝牙基本速率 (BR)、
增强型数据速率 (EDR) 以及低功耗 (LE);提供两种
型号:
先级处理
– 链路层拓扑散射网功能 - 可以同时作为外围设备
和中央设备
• 符合标准的蓝牙 4.2 组件(声明 ID:D032801);
最高可兼容 HCI 层
– 最多支持 10 个器件的网络
– 最大程度提升通道利用率的时间线优化算法
• 针对尺寸受限和低成本设计进行了高度优化:
– 单端 50Ω 射频 (RF) 接口
• 最佳蓝牙 (RF) 性能(TX 功率、RX 灵敏度、阻
断)
– 封装尺寸:76 引脚,间距为 0.6
mm,8mm×8mm (VQFNP-MR)
• BR 和 EDR 特性 包括:
– 最多可支持七个有源器件
– 第一类 TX 功率高达 +12dBm
– 内部温度检测和补偿,确保 RF 性能在温度范围
内变化最小,无需使用外部校准
– 适应时间最短的改进型自适应跳频 (AFH) 算法
– 散射网:支持多达三个微微网同时运行,其中一
个作为主网络,另外两个作为从网络
– 范围更大,涵盖其他仅提供低功耗模式的解决方
案范围的二倍
– 同一微微网中支持多达两条同步面向连接 (SCO)
链路
• 延长电池寿命并简化设计的高级电源管理
– 片上电源管理,包括直接连接电池
– 激活、待机和扫描蓝牙模式的功耗较低
– 可最大程度降低功耗的关断和休眠模式
• 物理接口:
– 支持所有语音空中编码 - 连续可变斜率增量
(CVSD) 编码、A 律编码、μ 律编码、改良型子带
编码 (mSBC) 以及透明编码(未编码)
– 为 HFP 1.6 宽带语音配置文件 (WBS) 或 A2DP
配置文件提供辅助模式,旨在降低主机处理负荷
和功耗
– 支持最高蓝牙数据速率的 UART 接口
– 最高速率为 4Mbps 的 UART 传输层 (H4)
– 最高速率为 4Mbps 的三线制 UART 传输层
– 以增强的 QoS 支持多种蓝牙配置文件
• 低耗能 特性 包括:
(H5)
– 完全可编程数字脉冲编码调制 (PCM) - 集成电路
内置音频总线 (I2S) 编解码器接口
• 支持在 MCU 和 MPU
– 多种嗅探实例紧密结合,最大程度降低功耗
– 针对低功耗模型进行独立缓冲,允许大量实施多
种不同连接,同时不影响 BR 或 EDR 性能
• CC256x 蓝牙硬件评估工具:
– 适用于 BR、EDR 和低功耗模式的内置共存和优
评估器件 RF 性能并配置服务包的 PC 应用程序
1.2 应用
•
•
•
•
无线音频解决方案
mPOS
•
•
穿戴式设备
传感器集线器,传感器网关
–
家庭与工厂自动化
医疗设备
机顶盒 (STB)
1.3 说明
TI CC2564C 器件是一款完备的 Bluetooth® BR、EDR 和低功耗 HCI 解决方案,能够降低设计工作量并缩短
上市时间。基于 TI 第七代蓝牙核心,CC2564C 器件提供久经验证的解决方案,符合蓝牙 4.2 标准。当与微
控制器单元 (MCU) 结合使用时,该 HCI 器件可提供最佳 RF 性能,射频范围约为其他蓝牙低功耗解决方案
的两倍。此外,TI 的电源管理硬件和软件算法可显著降低所有常用蓝牙 BR、EDR 和低功耗运行模式的功
耗。
TI 双模蓝牙协议栈软件经认证并免收版税,适用于 MCU 和 MPU。 iPod (Mfi) 协议 由®附加软件包提供支
持。有关详细信息,请参见 TI 双模蓝牙协议栈。支持多种配置文件和示例 应用, 包括以下内容:
串行端口配置 (SPP)
高级音频分配配置 (A2DP)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SWRS199
CC2564C
ZHCSFX3A –APRIL 2016–REVISED NOVEMBER 2016
www.ti.com.cn
音频/视频远程控制配置文件 (AVRCP)
免提配置文件 (HFP)
人机界面设备 (HID)
通用属性配置文件 (GATT)
多种蓝牙低功耗配置文件和服务
器件信息(1)
封装
产品型号
封装尺寸
CC2564CRVM
RVM (76)
8.00mm × 8.00mm × 0.60mm
(1) 有关此类器件的详细信息,请参见节 9。
空白
)
1.4 功能框图
CC2564C
2.4-GHz
band-pass filter
Coprocessor
(See Note)
PCM-I2S
I/O
interface
Modem
arbitrator
DRP
BR/EDR
main processor
UART
HCI
Power
management
Clock
management
Power
Shutdown
Slow
clock
Fast
clock
Copyright © 2016, Texas Instruments Incorporated
Note: 以下技术和辅助模式无法与协处理器同时使用:蓝牙低功耗、HFP 1.6 (WBS) 辅助模式以及 A2DP 辅助模式每次仅可使
用一种技术或辅助模式。
图 1-1. 功能框图
2
器件概述
版权 © 2016, Texas Instruments Incorporated
CC2564C
www.ti.com.cn
ZHCSFX3A –APRIL 2016–REVISED NOVEMBER 2016
内容
1
器件概述.................................................... 1
6.1 Overview ............................................ 23
6.2 Functional Block Diagram........................... 23
6.3 Clock Inputs ......................................... 23
6.4 Functional Blocks.................................... 27
6.5 Bluetooth BR and EDR Features ................... 38
6.6 Bluetooth low energy Description ................... 39
6.7 Bluetooth Transport Layers ......................... 40
1.1 特性 ................................................... 1
1.2 应用 ................................................... 1
1.3 说明 ................................................... 1
1.4 功能框图 .............................................. 2
修订历史记录............................................... 3
Device Comparison ..................................... 4
3.1 Related Products ..................................... 4
Terminal Configuration and Functions ............. 5
4.1 VQFN-MR Pin Diagram............................... 5
Specifications ............................................ 8
5.1 Absolute Maximum Ratings .......................... 8
5.2 ESD Ratings.......................................... 8
5.3 Power-On Hours...................................... 8
5.4 Recommended Operating Conditions ................ 9
5.5 Power Consumption Summary ....................... 9
5.6 Electrical Characteristics............................ 11
2
3
6.8
Changes from the CC2564B Device to the
CC2564C Device.................................... 40
4
5
7
8
Applications, Implementation, and Layout........ 41
7.1
Reference Design Schematics and BOM for Power
and Radio Connections ............................. 41
7.2 PCB Layout Guidelines ............................. 43
器件和文档支持 .......................................... 47
8.1 Third-Party Products Disclaimer .................... 47
8.2 工具与软件 .......................................... 47
8.3 器件命名规则 ........................................ 47
8.4 Community Resources.............................. 47
8.5 商标.................................................. 48
8.6 静电放电警告 ........................................ 48
8.7 Glossary ............................................. 48
机械、封装和可订购信息................................ 49
5.7
Thermal Resistance Characteristics for VQFN-MR
(RVM) Package .................................... 11
5.8 Timing and Switching Characteristics............... 12
6
Detailed Description ................................... 23
9
2 修订历史记录
注:之前版本的页码可能与当前版本有所不同。
Changes from April 8, 2016 to October 27, 2016
Page
•
已将文档状态更新至“量产数据” ..................................................................................................... 1
Copyright © 2016, Texas Instruments Incorporated
修订历史记录
3
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3 Device Comparison
Table 3-1 lists the features of the CC2564C device.
Table 3-1. CC2564C Device Features
ASSISTED MODES
SUPPORTED(1)
TECHNOLOGY SUPPORTED
DEVICE
DESCRIPTION
LOW
HFP 1.6
BR, EDR
A2DP
ENERGY
(WBS)
CC2564C
Bluetooth 4.2 + Bluetooth low energy
√
√
√
√
(1) The assisted modes (HFP 1.6 and A2DP) are not supported simultaneously. Furthermore, the assisted modes are not supported
simultaneously with Bluetooth low energy.
3.1 Related Products
Wireless Connectivity The wireless connectivity portfolio offers a wide selection of low-power RF
solutions suitable for a broad range of application. The offerings range from fully customized
solutions to turnkey offerings with precertified hardware and software (protocol).
Companion Products Review products that are frequently purchased or used with the CC2564C product.
Reference Designs for CC2564 The TI Designs Reference Design Library is a robust reference design
library spanning analog, embedded processor, and connectivity. Created by TI experts to
help you jump-start your system design, all TI Designs include schematic or block diagrams,
BOMs and design files to speed your time to market. Search and download designs at
ti.com/tidesigns.
4
Device Comparison
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ZHCSFX3A –APRIL 2016–REVISED NOVEMBER 2016
4 Terminal Configuration and Functions
4.1 VQFN-MR Pin Diagram
Figure 4-1 shows the bottom view of the pin diagram (VQFN-MR package).
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
NC
NC
DIG_LDO_OUT
HCI_CTS
DIG_LDO_OUT
VSS
A30
A29
A28
A27
A26
A25
A24
A23
A22
A21
B27
B26
B25
B24
B23
B22
B21
B20
B19
B1
B2
B3
B4
B5
B6
B7
B8
SRAM_LDO_OUT
DIG_LDO_OUT
MLDO_OUT
DIG_LDO_OUT
VSS_FREF
VDD_IO
NC
XTALM/FREFM
XTALP/FREFP
MLDO_OUT
TX_DBG
HCI_RX
NC
MLDO_IN
SLOW_CLK
VDD_IO
VSS
nSHUTD
CL1.5_LDO_IN
CL1.5_LDO_OUT
MLDO_OUT
VDD_IO
NC
ADC_PPA_LDO_OUT
BT_RF
NC
NC
MLDO_OUT
VDD_IO
NC
B9
NC
NC
SWRS121-002
Figure 4-1. VQFN-MR Package Pin Diagram
Bottom View
Copyright © 2016, Texas Instruments Incorporated
Terminal Configuration and Functions
5
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4.1.1 Pin Attributes (VQFN-MR Package)
Table 4-1 describes the pin attributes for the VQFN-MR package.
SPACER
Table 4-1. Pin Attributes (VQFN-MR Package)
PULL AT
RESET
DEF.
I/O
NAME
NO.
DESCRIPTION
DIR.(1)
Type(2)
I/O Signals
HY, 4
mA
AUD_CLK
B32
PD
I/O
PCM clock
Fail-safe
AUD_FSYNC
AUD_IN
A35
B34
B33
PD
PD
PD
I/O
I
4 mA
4 mA
4 mA
PCM frame-sync signal
PCM data input
Fail-safe
Fail-safe
Fail-safe
AUD_OUT
O
PCM data output
HCI UART clear-to-send
HCI_CTS
HCI_RX
A29
A26
PU
PU
I
I
8 mA
8 mA
The device is allowed to send data
when HCI_CTS is low.
HCI universal asynchronous
receiver/transmitter (UART) data
receive
HCI UART request-to-send
The host is allowed to send data when
HCI_RTS is low.
HCI_RTS
HCI_TX
A32
A33
B24
PU
PU
PU
O
O
O
8 mA
8 mA
2 mA
HCI UART data transmit
TI internal debug messages. TI
recommends leaving an internal test
point.
TX_DBG
Clock Signals
SLOW_CLK
A25
B4
I
I
32.768-kHz clock in
Fail-safe
Fail-safe
Fast clock in analog (sine wave)
Output terminal of fast-clock crystal
XTALP/FREFP
XTALM/FREFM
Fast clock in digital (square wave)
Input terminal of fast-clock crystal
A4
I
Fail-safe
Analog Signals
BT_RF
B8
A6
I/O
I
Bluetooth RF I/O
nSHUTD
PD
Shutdown input (active low)
Power and Ground Signals
ADC_PPA_LDO_OUT
A8
B6
O
I
ADC/PPA LDO output
Power amplifier (PA) LDO input
Connect directly to battery
CL1.5_LDO_IN
CL1.5_LDO_OUT
DCO_LDO_OUT
A7
O
O
PA LDO output
A12
DCO LDO output
A2, A3,
B15,
B26,
B27,
B35, B36
Digital LDO output
QFN pin B26 or B27 must be shorted
to other DIG_LDO_OUT pins on the
PCB.
DIG_LDO_OUT
O
Main LDO input
Connect directly to battery
MLDO_IN
B5
I
A5, A9,
B2, B7
MLDO_OUT
I/O
O
Main LDO output (1.8-V nominal)
SRAM LDO output
SRAM_LDO_OUT
B1
(1) I = input; O = output; I/O = bidirectional
(2) I/O Type: Digital I/O cells. HY = input hysteresis, current = typical output current
6
Terminal Configuration and Functions
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Table 4-1. Pin Attributes (VQFN-MR Package) (continued)
PULL AT
RESET
DEF.
I/O
NAME
NO.
DESCRIPTION
DIR.(1)
Type(2)
A17,
A34,
A38,
VDD_IO
B18,
I
I/O power supply (1.8-V nominal)
B19,
B21,
B22, B25
VSS
A24, A28
B11
I
I
I
Ground
VSS_DCO
VSS_FREF
DCO ground
Fast clock ground
B3
4.1.2 Connections for Unused Signals (VQFN-MR Package)
Section 4.1.2 lists the connections for unused signals for the VQFN-MR package.
SPACER
FUNCTION
PIN NUMBER
DESCRIPTION
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
A1
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
Not connected
TI internal use
TI internal use
TI internal use
TI internal use
TI internal use
TI internal use
TI internal use
TI internal use
TI internal use
TI internal use
TI internal use
TI internal use
TI internal use
A10
A11
A14
A18
A19
A20
A21
A22
A23
A27
A30
A31
A40
B9
B10
B16
B17
B20
B23
A13
A15
A16
A36
A37
A39
B12
B13
B14
B29
B30
B31
B28
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Terminal Configuration and Functions
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5 Specifications
Unless otherwise indicated, all measurements are taken at the device pins of the TI test evaluation board
(EVB). All specifications are over process, voltage, and temperature, unless otherwise indicated.
5.1 Absolute Maximum Ratings(1)
Over operating free-air temperature range (unless otherwise indicated). All parameters are measured as follows:
VDD_IN = 3.6 V and VDD_IO = 1.8 V (unless otherwise indicated).
MIN
–0.5
–0.5
–0.5
–0.5
MAX
UNIT
V(2)
V
VDD_IN
4.8
Supply voltage
VDDIO_1.8 V
2.145
Input voltage to analog pins(3)
Input voltage to all other pins
Bluetooth RF inputs
2.1
V
VDD_IO + 0.5
V
10
85
dBm
°C
(4)
Operating ambient temperature, TA
Storage temperature, Tstg
–40
–55
125
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Maximum allowed depends on accumulated time at that voltage: VDD_IN is defined in Section 7.1.
(3) Analog pins: BT_RF, XTALP, and XTALM
(4) The reference design supports a temperature range of –20°C to +70°C because of the operating conditions of the crystal.
5.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±500
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC specification JESD22-
C101(2)
±250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
5.3 Power-On Hours
DEVICE
CONDITIONS
POWER-ON HOURS
15,400 (7 years)
Duty cycle = 25% active and 75% sleep
Tambient = 85ºC
CC2564C
8
Specifications
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5.4 Recommended Operating Conditions
MIN
MAX
4.8
UNIT
VDD_IN
VDD_IO
VIH
Power supply voltage
I/O power supply voltage
High-level input voltage
Low-level input voltage
1.7
V
V
V
V
1.62
0.65 × VDD_IO
0
1.92
Default condition
Default condition
VDD_IO
VIL
0.35 × VDD_IO
I/O input rise and all times,
10% to 90%—asynchronous mode
tr and tf
1
1
10
ns
ns
I/O input rise and fall times,
10% to 90%—synchronous mode (PCM)
2.5
Condition: 0 to 0.1 MHz
Condition: 0.1 to 0.5 MHz
Condition: 0.5 to 2.5 MHz
Condition: 2.5 to 3.0 MHz
Condition: > 3.0 MHz
60
50
30
15
5
Maximum ripple on VDD_IN (sine wave) for
1.8 V (DC-DC) mode
mVp-p
Voltage dips on VDD_IN (VBAT)
Duration = 577 µs to 2.31 ms, period = 4.6 ms
Maximum ambient operating temperature(1)
400
85
mV
°C
(2)
–40
(1) The device can be reliably operated for 7 years at Tambient of 85°C, assuming 25% active mode and 75% sleep mode (15,400
cumulative active power-on hours).
(2) A crystal-based solution is limited by the temperature range required for the crystal to meet 20 ppm.
5.5 Power Consumption Summary
5.5.1 Static Current Consumption
OPERATIONAL MODE
MIN
TYP
1
MAX
7
UNIT
Shutdown mode(1)
Deep sleep mode(2)
µA
µA
40
105
1
Total I/O current consumption in active mode
Continuous transmission—GFSK(3)
Continuous transmission—EDR(4)(5)
mA
mA
mA
107
112.5
(1) VBAT + VIO + VSHUTDOWN
(2) VBAT + VIO
(3) At maximum output power dBm
(4) At maximum output power dBm
(5) Both π/4 DQPSK and 8DPSK
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Specifications
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5.5.2 Dynamic Current Consumption
5.5.2.1 Current Consumption for Different Bluetooth BR and EDR Scenarios
Conditions: VDD_IN = 3.6 V, 25°C, 26-MHz XTAL, nominal unit, 10-dBm output power
OPERATIONAL MODE
MASTER AND SLAVE
Master and slave
Master and slave
Master and slave
Master and slave
Master and slave
Master and slave
Master and slave
Master and slave
AVERAGE CURRENT
UNIT
mA
mA
mA
mA
mA
mA
µA
SCO link HV3
13.7
13.2
10
Extended SCO (eSCO) link EV3 64 kbps, no retransmission
eSCO link 2-EV3 64 kbps, no retransmission
GFSK full throughput: TX = DH1, RX = DH5
EDR full throughput: TX = 2-DH1, RX = 2-DH5
EDR full throughput: TX = 3-DH1, RX = 3-DH5
Sniff, four attempts, 1.28 seconds
40.5
41.2
41.2
145
320
Page or inquiry scan 1.28 seconds, 11.25 ms
µA
Page (1.28 seconds) and inquiry (2.56 seconds) scans,
11.25 ms
Master and slave
445
µA
A2DP source
Master
Master
Master
Master
13.9
15.2
16.9
18.1
mA
mA
mA
mA
A2DP sink
Assisted A2DP source
Assisted A2DP sink
Assisted WBS EV3; retransmit effort = 2;
maximum latency = 8 ms
Master and slave
Master and slave
17.5 and 18.5
11.9 and 13
mA
mA
Assisted WBS 2EV3; retransmit effort = 2;
maximum latency = 12 ms
5.5.2.2 Current Consumption for Different Low-Energy Scenarios
Conditions: VDD_IN = 3.6 V, 25°C, nominal unit, 10-dBm output power
AVERAGE
CURRENT
MODE
DESCRIPTION
UNIT
Advertising in all three channels
1.28-seconds advertising interval
15 bytes advertise data
Advertising, nonconnectable
114
µA
Advertising in all three channels
1.28-seconds advertising interval
15 bytes advertise data
Advertising, discoverable
Scanning
138
324
µA
µA
µA
Listening to a single frequency per window
1.28-seconds scan interval
11.25-ms scan window
Master role
Slave role
500-ms connection interval
0-ms slave connection latency
Empty TX and RX LL packets
169
199
Connected
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5.6 Electrical Characteristics
RATING
CONDITION
At 2, 4, 8 mA
MIN
MAX
VDD_IO
UNIT
0.8 × VDD_IO
High-level output voltage, VOH
Low-level output voltage, VOL
V
At 0.1 mA
VDD_IO – 0.2
VDD_IO
At 2, 4, 8 mA
At 0.1 mA
0
0
1
0.2 × VDD_IO
0.2
V
Resistance
Capacitance
CL = 20 pF
Typical = 6.5
Typical = 27
Typical = 100
Typical = 100
MΩ
pF
ns
I/O input impedance
5
10
Output rise and fall times, 10% to 90% (digital pins)
PU
PD
PU
PD
3.5
9.5
50
9.7
55
PCM–I2S bus, TX_DBG
I/O pull
µA
currents
300
360
All others
50
5.7 Thermal Resistance Characteristics for VQFN-MR (RVM) Package
over operating free-air temperature range (unless otherwise noted)
THERMAL METRICS(1)
C/W(2)
Rθja
Junction-to-free-air
34.6
17.9
1.6
Rθjctop
Rθjcbottom
Rθjb
Junction-to-case-top
Junction-to-case-bottom
Junction-to-board
12.0
0.2
φjt
Junction-to-package-top
Junction-to-package-bottom
φjb
12.0
(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
(2) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on a
JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these
EIA/JEDEC standards:
•
•
•
•
JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
Power dissipation of 2 W and an ambient temperature of 70ºC is assumed.
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5.8 Timing and Switching Characteristics
5.8.1 Device Power Supply
The CC2564C power-management hardware and software algorithms provide significant power savings,
which is a critical parameter in an MCU-based system.
The power-management module is optimized for drawing extremely low currents.
5.8.1.1 Power Sources
The CC2564C device requires two power sources:
•
•
VDD_IN: main power supply for the device
VDD_IO: power source for the 1.8-V I/O ring
The HCI module includes several on-chip voltage regulators for increased noise immunity and can be
connected directly to the battery.
5.8.1.2 Device Power-Up and Power-Down Sequencing
The device includes the following power-up requirements (see Figure 5-1):
•
nSHUTD must be low. VDD_IN and VDD_IO are don't care I/O pins when nSHUTD is low. However,
signals are not allowed on the I/O pins if I/O power is not supplied, because the I/Os are not fail-safe.
Exceptions are SLOW_CLK_IN and AUD_xxx, which are fail-safe and can tolerate external voltages
with no VDD_IO and VDD_IN.
•
•
•
VDD_IO and VDD_IN must be stable before releasing nSHUTD.
The fast clock must be stable within 20 ms of nSHUTD going high.
The slow clock must be stable within 2 ms of nSHUTD going high.
The device indicates that the power-up sequence is complete by asserting RTS low, which occurs up to
100 ms after nSHUTD goes high. If RTS does not go low, the device is not powered up. In this case,
ensure that the sequence and requirements are met.
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Shut down
before
VDD_IO
removed
20 µs max
nSHUTD
VDD_IO
VDD_IN
2 ms max
SLOW CLOCK
20 ms max
FAST CLOCK
HCI_RTS
ꢀ00 ms
CC256x ready
Copyright © 20ꢀ6, Texas Instruments Incorporated
Figure 5-1. Power-Up and Power-Down Sequencing
5.8.1.3 Power Supplies and Shutdown—Static States
The nSHUTD signal puts the device in ultra-low-power mode and performs an internal reset to the device.
The rise time for nSHUTD must not exceed 20 µs; nSHUTD must be low for a minimum of 5 ms.
To prevent conflicts with external signals, all I/O pins are set to the high-impedance (Hi-Z) state during
shutdown and power up of the device. The internal pull resistors are enabled on each I/O pin, as
described in Section 4.1.1. Table 5-1 lists and describes the static operation states.
Table 5-1. Power Modes
(1)
VDD_IN
VDD_IO(1)
nSHUTD(1)
PM_MODE
COMMENTS
I/O state is undefined. No I/O voltages
are allowed on nonfail-safe pins.
1
2
3
None
None
Asserted
Shutdown
I/O state is undefined. No I/O voltages
are allowed on nonfail-safe pins.
None
None
None
Deasserted
Asserted
Not allowed
Shutdown
I/Os are defined as tri-state pins with
internal pullup or pulldown enabled.
Present
I/O state is undefined. No I/O voltages
are allowed on nonfail-safe pins.
4
5
6
None
Present
None
Deasserted
Asserted
Not allowed
Shutdown
Present
Present
I/O state is undefined.
I/O state is undefined. No I/O voltages
are allowed on nonfail-safe pins.
None
Deasserted
Not allowed
I/Os are defined as tri-state pins with
internal pullup or pulldown enabled.
7
8
Present
Present
Present
Present
Asserted
Shutdown
Active
Deasserted
See Section 5.8.1.4.
(1) The terms None or Asserted can imply any of the following conditions: directly pulled to ground or driven low, pulled to ground through a
pulldown resistor, or left NC or floating (high-impedance output stage).
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5.8.1.4 I/O States in Various Power Modes
CAUTION
Some device I/Os are not fail-safe (see Section 4.1.1). Fail-safe means that the
pins do not draw current from an external voltage applied to the pin when I/O
power is not supplied to the device. External voltages are not allowed on these
I/O pins when the I/O supply voltage is not supplied because of possible
damage to the device.
Table 5-2 lists the I/O states in various power modes.
Table 5-2. I/O States in Various Power Modes
SHUTDOWN(1)
DEFAULT ACTIVE(1)
I/O State Pull
DEEP SLEEP(1)
I/O NAME
HCI_RX
I/O State
Pull
PU
PU
PU
PU
PD
PD
PD
PD
PU
I/O State
Pull
Z
Z
Z
Z
Z
Z
Z
Z
Z
I
PU
I
O
O
I
PU
HCI_TX
O-H
HCI_RTS
HCI_CTS
AUD_CLK
AUD_FSYNC
AUD_IN
O-H
I
I
PU
PD
PD
PD
PD
PU
PD
PD
PD
PD
I
I
I
I
I
AUD_OUT
TX_DBG
Z
O
Z
(1) I = input, O = output, Z = Hi-Z, – = no pull, PU = pullup, PD = pulldown, H = high, L = low
5.8.1.5 nSHUTD Requirements
PARAMETER
MIN
1.42
0
MAX
1.98
0.4
UNIT
(1)
VIH
VIL
Operation mode level
Shutdown mode level
V
V
(1)
Minimum time for nSHUT_DOWN low to reset the device
Rise and fall times
5
ms
µs
tr and tf
20
(1) An internal pulldown retains shutdown mode when no external signal is applied to this pin.
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5.8.2 Clock Specifications
5.8.2.1 Slow Clock Requirements
An external source must supply the slow clock and connect to the SLOW_CLK_IN pin (for example, the
host or external crystal oscillator). The source must be a digital signal in the range of 0 to 1.8 V. The
accuracy of the slow-clock frequency must be 32.768 kHz ±250 ppm for Bluetooth use (as specified in the
Bluetooth specification). The external slow clock must be stable within 64 slow-clock cycles (2 ms)
following the release of nSHUTD.
space
CHARACTERISTICS
CONDITION
MIN
TYP
MAX
UNIT
Input slow-clock frequency
32768
Hz
Input slow-clock accuracy
(Initial + temp + aging)
Bluetooth
±250
200
ppm
ns
Input transition time tr and tf
(10% to 90%)
tr and tf
Frequency input duty cycle
15%
50%
85%
VDD_IO
VIH
VIL
0.65 × VDD_IO
V peak
V peak
MΩ
Square wave,
DC-coupled
Slow-clock input voltage limits
0
1
0.35 × VDD_IO
Input impedance
Input capacitance
5
pF
5.8.2.2 External Fast Clock Crystal Requirements and Operation
space
CHARACTERISTICS
CONDITION
MIN
TYP
MAX
UNIT
fin
Supported crystal frequencies
26, 38.4
MHz
Frequency accuracy
(Initial + temperature + aging)
±20
ppm
26 MHz, external capacitance = 8 pF
Iosc = 0.5 mA
650
490
940
710
Crystal oscillator negative resistance
Ω
26 MHz, external capacitance = 20 pF
Iosc = 2.2 mA
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5.8.2.3 Fast Clock Source Requirements (–40°C to +85°C)
space
CHARACTERISTICS
Supported frequencies, FREF
Reference frequency accuracy
CONDITION
MIN
TYP
MAX
UNIT
MHz
ppm
V
26, 38.4
Initial + temp + aging
±20
0.37
2.1
VIL
VIH
–0.2
1.0
0.4
0.4
0.0
Square wave, DC-coupled
V
Fast-clock input voltage limits
Sine wave, AC-coupled
Sine wave, DC-coupled
1.6
Vp-p
Vp-p
V
1.6
Sine wave input limits, DC-coupled
1.6
Fast-clock input rise time
(as % of clock period)
Square wave, DC-coupled
10%
Duty cycle
35%
50%
65%
–123.4
–133.4
–138.4
@ offset = 1 kHz
@ offset = 10 kHz
@ offset = 100 kHz
Phase noise for 26 MHz
dBc/Hz
5.8.3 Peripherals
5.8.3.1 UART
Figure 5-2 shows the UART timing diagram.
HCI_RTS
t1
t2
t6
HCI_RX
HCI_CTS
t3
t4
HCI_TX
Start bit
Stop bit
10 bits
td_uart_swrs064
Figure 5-2. UART Timing
Table 5-3 lists the UART timing characteristics.
Table 5-3. UART Timing Characteristics
SYMBOL
CHARACTERISTICS
CONDITION
MIN
37.5
TYP
MAX UNIT
Baud rate
4000
1.5%
kbps
Baud rate accuracy per byte
Baud rate accuracy per bit
RTS low to RX_DATA on
RTS high to RX_DATA off
CTS low to TX_DATA on
CTS high to TX_DATA off
CTS-high pulse width
Receive and transmit
–2.5%
–12.5%
0
Receive and transmit
Interrupt set to 1/4 FIFO
Hardware flow control
12.5%
t1
t2
t3
t4
t6
2
2
µs
byte
µs
16
1
0
1
byte
bit
16
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Figure 5-3 shows the UART data frame.
tb
TX
STR
D0
D1
Dn
PAR
STP
D2
td_uart_swrs064
Figure 5-3. Data Frame
Table 5-4 describes the symbols used in Figure 5-3.
Table 5-4. Data Frame Key
SYMBOL
STR
DESCRIPTION
Start bit
D0...Dn
PAR
Data bits (LSB first)
Parity bit (optional)
Stop bit
STP
5.8.3.2 PCM
Figure 5-4 shows the interface timing for the PCM.
Tclk
Tw
Tw
AUD_CLK
tis
tih
AUD_IN / FSYNC_IN
top
AUD_OUT / FSYNC_OUT
td_aud_swrs064
Figure 5-4. PCM Interface Timing
Table 5-5 lists the associated PCM master parameters.
Table 5-5. PCM Master
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
244.14
(4.096 MHz)
15625
(64 kHz)
tclk
Cycle time
ns
tw
tis
High or low pulse width
AUD_IN setup time
50% of Tclk min
ns
ns
ns
ns
ns
25
0
tih
AUD_IN hold time
top
top
AUD_OUT propagation time
FSYNC_OUT propagation time
40-pF load
40-pF load
0
10
10
0
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Table 5-6 lists the associated PCM slave parameters.
Table 5-6. PCM Slave
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
66.67
(15 MHz)
tclk
Cycle time
ns
tw
Tis
tih
High or low pulse width
AUD_IN setup time
40% of Tclk
ns
ns
ns
ns
ns
ns
8
0
8
0
0
AUD_IN hold time
tis
AUD_FSYNC setup time
AUD_FSYNC hold time
AUD_OUT propagation time
tih
top
40-pF load
21
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5.8.4 RF Performance
5.8.4.1 Bluetooth BR and EDR RF Performance
All parameters in this section that are fast-clock dependent are verified using a 26-MHz XTAL and
38.4-MHz TCXO.
5.8.4.1.1 Bluetooth Receiver—In-Band Signals
BLUETOOTH
SPECIFICATION
CHARACTERISTICS
CONDITION
MIN
TYP
MAX
UNIT
Operation frequency range
Channel spacing
2402
2480
MHz
MHz
Ω
1
50
Input impedance
GFSK, BER = 0.1%
–91.5
–90.5
–81
–95
–70
–70
Sensitivity, dirty TX on(1)
π/4-DQPSK, BER = 0.01%
8DPSK, BER = 0.01%
π/4-DQPSK
–94.5
–87.5
1E–7
dBm
–70
1E–6
1E–6
–5
1E–5
1E–5
–20
BER error floor at sensitivity +
10 dB, dirty TX off
8DPSK
GFSK, BER = 0.1%
π/4-DQPSK, BER = 0.1%
8DPSK, BER = 0.1%
Level of interferers (for n = 3, 4, and 5)
GFSK, cochannel
Maximum usable input power
Intermodulation characteristics
–10
dBm
dBm
–10
–36
–30
8
–39
11
10
11
π/4-DQPSK
9.5
13
EDR, cochannel
8DPSK
16.5
–10
–10
–5
20
21
GFSK, adjacent ±1 MHz
EDR, adjacent ±1 MHz, (image)
GFSK, adjacent +2 MHz
EDR, adjacent, +2 MHz
GFSK, adjacent –2 MHz
EDR, adjacent –2 MHz
GFSK, adjacent ≥ |±3| MHz
EDR, adjacent ≥ |±3| MHz
–5
0
π/4-DQPSK
–5
0
8DPSK
–1
5
–38
–38
–38
–28
–28
–22
–45
–45
–44
–10
–63
–35
–35
–30
–20
–20
–13
–43
–43
–36
–30
–30
–25
–20
–20
–13
–40
–40
–33
C/I performance(2)
Image = –1 MHz
π/4-DQPSK
dB
8DPSK
π/4-DQPSK
8DPSK
π/4-DQPSK
8DPSK
RF return loss
dB
RX mode LO leakage
Frf = (received RF – 0.6 MHz)
–58
dBm
(1) Sensitivity degradation up to 3 dB may occur for minimum and typical values where the Bluetooth frequency is a harmonic of the fast
clock.
(2) Numbers show ratio of desired signal to interfering signal. Smaller numbers indicate better C/I performance.
5.8.4.1.2 Bluetooth Receiver—General Blocking
CHARACTERISTICS
CONDITION
30 to 2000 MHz
MIN
TYP
–6
UNIT
2000 to 2399 MHz
2484 to 3000 MHz
3 to 12.75 GHz
–6
Blocking performance over full range, according to Bluetooth
specification
dBm
(1)
–6
–6
(1) Exceptions are taken out of the total 24 allowed in the Bluetooth specification.
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5.8.4.1.3 Bluetooth Transmitter—GFSK
BLUETOOTH
SPECIFICATION
CHARACTERISTICS
MIN
TYP
MAX
UNIT
VDD_IN = VBAT
12
10
Maximum RF output
power(1)
dBm
VDD_IN = external regulator to 1.8 V
Power variation over Bluetooth band
Gain control range
–1
1
dB
dB
30
5
Power control step
2 to 8
≤ –20
≤ –40
dB
Adjacent channel power |M–N| = 2
Adjacent channel power |M–N| > 2
–45
–50
dBm
dBm
(1) To modify maximum output power, use an HCI VS command.
5.8.4.1.4 Bluetooth Transmitter—EDR
BLUETOOTH
SPECIFICATION
CHARACTERISTICS
MIN
TYP
MAX
UNIT
VDD_IN = VBAT
5.5
5.5
5.5
5.5
π/4-DQPSK
VDD_IN = external regulator to 1.8 V
VDD_IN = VBAT
EDR output
power(1)
dBm
8DPSK
VDD_IN = external regulator to 1.8 V
EDR relative power
–2
–1
1
–4 to +1
dB
dB
Power variation over Bluetooth band
Gain control range
1
30
5
dB
Power control step
2 to 8
≤ –26
≤ –20
≤ –40
dB
Adjacent channel power |M–N| = 1
Adjacent channel power |M–N| = 2
Adjacent channel power |M–N| > 2
–36
–30
–42
dBc
dBm
dBm
(1) To modify maximum output power, use an NCI VS command.
5.8.4.1.5 Bluetooth Modulation—GFSK
BLUETOOTH
SPECIFICATION
CHARACTERISTICS
CONDITION
MIN
TYP MAX
UNIT
–20-dB bandwidth
GFSK
925
≤ 1000
kHz
Mod data = 4 1 s,
4 0 s:
111100001111...
F1 avg
F2 max
Δf1avg
165
130
140 to 175
kHz
kHz
Modulation characteristics
Δf2max ≥ limit for at
least 99.9% of all
Δf2max
Mod data = 1010101...
> 115
Δf2avg, Δf1avg
DH1
88%
25
> 80%
< ±25
< ±40
< 20
–25
–35
Absolute carrier frequency
drift
kHz
DH3 and DH5
35
Drift rate
15
kHz/50 µs
kHz
Initial carrier frequency
tolerance
f0–fTX
–75
+75
< ±75
20
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5.8.4.1.6 Bluetooth Modulation—EDR
BLUETOOTH
SPECIFICATION
CHARACTERISTICS
CONDITION
MIN
TYP
MAX
UNIT
Carrier frequency stability
±5
≤ 10
±75
kHz
kHz
Initial carrier frequency tolerance
±75
π/4-DQPSK
6%
6%
20%
13%
30%
20%
35%
25%
(1)
RMS DEVM
8DPSK
π/4-DQPSK
8DPSK
30%
20%
99% DEVM(1)
π/4-DQPSK
8DPSK
14%
16%
(1)
Peak DEVM
(1) Maximum performance refers to maximum TX power.
5.8.4.1.7 Bluetooth Transmitter—Out-of-Band and Spurious Emissions
CHARACTERISTICS
Second harmonic(1)
Third harmonic(1)
CONDITION
TYP
MAX
–2
UNIT
–14
–10
–19
dBm
dBm
dBm
Measured at maximum output power
–6
Fourth harmonics(1)
–11
(1) Meets FCC and ETSI requirements with external filter shown in Figure 7-1.
5.8.4.2 Bluetooth low energy RF Performance
All parameters in this section that are fast-clock dependent are verified using a 26-MHz XTAL and a
38.4-MHz TCXO.
5.8.4.2.1 Bluetooth low energy Receiver—In-Band Signals
BLUETOOTH
CHARACTERISTIC
CONDITION
MIN
TYP
MAX
low energy
UNIT
SPECIFICATION
Operation frequency range
Channel spacing
2402
2480
MHz
MHz
Ω
2
50
Input impedance
Sensitivity, dirty TX on(1)
PER = 30.8%; dirty TX on
GMSK, PER = 30.8%
–96
≤ –70
≥ –10
dBm
dBm
Maximum usable input power
–5
Level of interferers
(for n = 3, 4, 5)
Intermodulation characteristics
–30
≥ –50
dBm
GMSK, cochannel
8
–5
≤ 21
≤ 15
GMSK, adjacent ±1 MHz
GMSK, adjacent +2 MHz
GMSK, adjacent –2 MHz
GMSK, adjacent ≥ |±3| MHz
Frf = (received RF – 0.6 MHz)
C/I performance(2)
Image = –1 MHz
–45
–22
–47
–63
≤ –17
≤ –15
≤ –27
dB
RX mode LO leakage
dBm
(1) Sensitivity degradation up to 3 dB may occur where the Bluetooth low energy frequency is a harmonic of the fast clock.
(2) Numbers show wanted signal-to-interfering signal ratio. Smaller numbers indicate better C/I performance.
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5.8.4.2.2 Bluetooth low energy Receiver—General Blocking
BLUETOOTH
low energy
SPECIFICATION
CHARACTERISTICS
CONDITION
30 to 2000 MHz
MIN
TYP
UNIT
–15
–15
–15
–15
≥ –30
≥ –35
≥ –35
≥ –30
Blocking performance over full
range, according to Bluetooth
low energy specification(1)
2000 to 2399 MHz
2484 to 3000 MHz
3 to 12.75 GHz
dBm
(1) Exceptions are taken out of the total 10 allowed in the Bluetooth low energy specification.
5.8.4.2.3 Bluetooth low energy Transmitter
BLUETOOTH
CHARACTERISTICS
MIN
TYP
MAX
low energy
UNIT
SPECIFICATION
VDD_IN = VBAT
12(1)
10
≤10
≤10
RF output power
dBm
VDD_IN = External regulator to 1.8 V
Power variation over Bluetooth low energy band
Adjacent channel power |M-N| = 2
1
dB
–45
–50
≤ –20
≤ –30
dBm
dBm
Adjacent channel power |M-N| > 2
(1) To achieve the Bluetooth low energy specification of 10-dBm maximum, an insertion loss of > 2 dB is assumed between the RF ball and
the antenna. Otherwise, use an HCI VS command to modify the output power.
5.8.4.2.4 Bluetooth low energy Modulation
BLUETOOTH
CHARACTERISTICS
CONDITION
Mod data = 4 1s, 4 0 s:
MIN
240
185
TYP MAX
low energy
SPECIFICATION
UNIT
kHz
Δf1 avg
Δf1avg
250
260
225 to 275
1111000011110000...
Modulation
Δf2max ≥ limit for at
least 99.9% of all
Δf2max
characteristics
Mod data = 1010101...
210
0.9
≥ 185
kHz
Δf2 max
Δf2avg, Δf1avg
0.85
–25
≥ 0.8
≤ ±50
≤ 20
Absolute carrier
frequency drift
25
15
kHz
Drift rate
kHz/50 ms
Initial carrier
frequency
tolerance
–75
75
≤ ±100
kHz
5.8.4.2.5 Bluetooth low energy Transceiver, Out-Of-Band and Spurious Emissions
CHARACTERISTICS
Second harmonic(1)
Third harmonic(1)
CONDITION
TYP
–14
–10
–19
MAX
–2
UNIT
dBm
dBm
dBm
Measured at maximum output power
–6
Fourth harmonics(1)
–11
(1) Meets FCC and ETSI requirements with external filter shown in Figure 7-1.
22
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6 Detailed Description
6.1 Overview
The CC2564C architecture comprises a DRP and a point-to-multipoint baseband core. The architecture is
based on a single-processor ARM7TDMI® core. The device includes several on-chip peripherals to enable
easy communication with a host system and the Bluetooth BR, EDR, and low energy core.
6.2 Functional Block Diagram
CC2564C
2.4-GHz
band-pass filter
Coprocessor
(See Note)
PCM-I2S
I/O
interface
Modem
arbitrator
DRP
BR/EDR
main processor
UART
HCI
Power
management
Clock
management
Power
Shutdown
Slow
clock
Fast
clock
Copyright © 2016, Texas Instruments Incorporated
NOTE: The following technologies and assisted modes cannot be used simultaneously with the coprocessor: Bluetooth low
energy, assisted HFP 1.6 (WBS), and assisted A2DP. Only one technology or assisted mode can be used at a time.
Figure 6-1. CC2564C Functional Block Diagram
6.3 Clock Inputs
This section describes the available clock inputs. For specifications, see Section 5.8.2.
6.3.1 Slow Clock
An external source must supply the slow clock and connect to the SLOW_CLK_IN pin (for example, the
host or external crystal oscillator). The source must be a digital signal in the range of 0 V to 1.8 V. The
accuracy of the slow-clock frequency must be 32.768 kHz ±250 ppm for Bluetooth use (as specified in the
Bluetooth specification). The external slow clock must be stable within 64 slow-clock cycles (2 ms)
following the release of nSHUTD.
6.3.2 Fast Clock Using External Clock Source
An external clock source is fed to an internal pulse-shaping cell to provide the fast-clock signal for the
device. The device incorporates an internal, automatic clock-scheme detection mechanism that
automatically detects the fast-clock scheme used and configures the FREF cell accordingly. This
mechanism ensures that the electrical characteristics (loading) of the fast-clock input remain static
regardless of the scheme used and eliminates any power-consumption penalty-versus-scheme used.
The frequency variation of the fast-clock source must not exceed ±20 ppm (as defined by the Bluetooth
specification).
The external clock can be AC- or DC-coupled, sine or square wave.
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6.3.2.1 External FREF DC-Coupled
Figure 6-2 and Figure 6-3 show the clock configuration when using a square wave, DC-coupled external
source for the fast-clock input.
NOTE
A shunt capacitor with a range of 10 nF must be added on the oscillator output to reject high
harmonics and shape the signal to be close to a sinusoidal waveform.
TI recommends using only a dedicated LDO to feed the oscillator. Do not use the same VIO
for the oscillator and the CC2564C device.
FREFP
CC2564C
FREFM
Copyright © 2016, Texas Instruments Incorporated
Figure 6-2. Clock Configuration (Square Wave, DC-Coupled)
VFref [V]
2.1
Vhigh_min
1.0
Vlow_max
0.37
–0.2
t
clksqtd_wrs064
Figure 6-3. External Fast Clock (Square Wave, DC-Coupled)
Figure 6-4 and Figure 6-5 show the clock configuration when using a sine wave, DC-coupled external
source for the fast clock input.
FREFP
CC2564C
FREFM
VDD_IO
Copyright © 2016, Texas Instruments Incorporated
Figure 6-4. Clock Configuration (Sine Wave, DC-Coupled)
24
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VIN
1.6 V
VPP = 0.4 – 1.6 Vp-p
Vdc = 0.2 – 1.4 V
0
t
SWRS097-023
Figure 6-5. External Fast Clock (Sine Wave, DC-Coupled)
6.3.2.2 External FREF Sine Wave, AC-Coupled
Figure 6-6 and Figure 6-7 show the configuration when using a sine wave, AC-coupled external source for
the fast-clock input.
FREFP
68 pF
CC2564C
FREFM
VDD_IO
Copyright © 2016, Texas Instruments Incorporated
Figure 6-6. Clock Configuration (Sine Wave, AC-Coupled)
VIN [V]
1 V
VPP = 0.4 – 1.6 Vp-p
0.8
0.2
0
t
–0.2
–0.8
SWRS097-022
Figure 6-7. External Fast Clock (Sine Wave, AC-Coupled)
In cases where the input amplitude is greater than 1.6 Vp-p, the amplitude can be reduced to within limits.
Using a small series capacitor forms a voltage divider with the internal input capacitance of approximately
2 pF to provide the required amplitude at the device input.
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6.3.2.3 Fast Clock Using External Crystal
The CC2564C device incorporates an internal crystal oscillator buffer to support a crystal-based fast-clock
scheme. The supported crystal frequencies are 26 and 38.4 MHz.
The frequency accuracy of the fast-clock source must not exceed ±20 ppm (including the accuracy of the
capacitors, as specified in the Bluetooth specification).
Figure 6-8 shows the recommended fast-clock circuitry.
CC2564C
C1
XTAL
C2
XTALM
XTALP
Oscillator
buffer
Copyright © 2016, Texas Instruments Incorporated
Figure 6-8. Fast-Clock Crystal Circuit
Table 6-1 lists component values for the fast-clock crystal circuit.
Table 6-1. Fast-Clock Crystal Circuit
Component Values
FREQ (MHz)
C1 (pF)(1)
C2 (pF)(1)
26
12
12
(1) To achieve the required accuracy, values for C1 and C2 must be
taken from the crystal manufacturer's data sheet and layout
considerations.
26
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6.4 Functional Blocks
6.4.1 RF
The CC2564C device is the third generation of Bluetooth single-chip devices using DRP architecture from
TI. Modifications and new features added to the DRP further improve radio performance.
Figure 6-9 shows the DRP block diagram.
Transmitter path
Amplitude
TX digital data
Digital
ADPLL
DPA
Phase
Receiver path
IFA
RX digital data
Demodulation
Filter
ADC
LNA
SWRS092-005
Copyright © 2016, Texas Instruments Incorporated
Figure 6-9. DRP Block Diagram
6.4.1.1 Receiver
The receiver uses near-zero-IF architecture to convert the RF signal to baseband data. The signal
received from the external antenna is input to a single-ended low-noise amplifier (LNA) and passed to a
mixer that downconverts the signal to IF, followed by a filter and amplifier. The signal is then quantized by
a sigma-delta analog-to-digital converter (ADC) and further processed to reduce the interference level.
The demodulator digitally downconverts the signal to zero-IF and recovers the data stream using an
adaptive-decision mechanism. The demodulator includes EDR processing with:
•
•
State-of-the-art performance
A maximum-likelihood sequence estimator (MLSE) to improve the performance of basic-rate GFSK
sensitivity
•
Adaptive equalization to enhance EDR modulation
New features include:
•
•
LNA input range narrowed to increase blocking performance
Active spur cancellation to increase robustness to spurs
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6.4.1.2 Transmitter
The transmitter is an all-digital, sigma-delta phase-locked loop (ADPLL) based with a digitally controlled
oscillator (DCO) at 2.4 GHz as the RF clock. The transmitter directly modulates the digital PLL. The power
amplifier is also digitally controlled. The transmitter uses the polar-modulation technique. While the phase-
modulated control word is fed to the ADPLL, the amplitude-modulated controlled word is fed to the class-E
amplifier to generate a Bluetooth standard-compliant RF signal.
New features include:
•
•
Improved TX output power
LMS algorithm to improve the differential error vector magnitude (DEVM)
6.4.2 Host Controller Interface
The CC2564C device incorporates one UART module dedicated to the HCI transport layer. The HCI
transports commands, events, and ACL between the device and the host using HCI data packets.
The CC2564C device supports the H4 protocol (4-wire UART) with hardware flow control and the H5
protocol (3-wire UART) with software flow control. The CC2564C device automatically detects the protocol
on reception of the first command.
The maximum baud rate of the UART module is 4 Mbps; however, the default baud rate after power up is
set to 115.2 kbps. The baud rate can thereafter be changed with a VS command. The device responds
with a command complete event (still at 115.2 kbps), after which the baud rate change occurs.
The UART module includes the following features:
•
•
•
•
Receiver detection of break, idle, framing, FIFO overflow, and parity error conditions
Transmitter underflow detection
CTS and RTS hardware flow control (H4 protocol)
XON and XOFF software flow control (H5 protocol)
Table 6-2 lists the UART module default settings.
Table 6-2. UART Module Default Settings
PARAMETER
Bit rate
VALUE
115.2 kbps
8 bits
Data length
Stop bit
1
Parity
None
28
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6.4.2.1 4-Wire UART Interface—H4 Protocol
The H4 UART Interface includes four signals:
•
•
•
•
TX
RX
CTS
RTS
Flow control between the host and the CC2564C device is bytewise by hardware.
Figure 6-10 shows the H4 UART interface.
HCI_RX
HCI_TX
Host_RX
Host_TX
Host
CC2564C
HCI_CTS
HCI_RTS
Host_CTS
Host_RTS
Copyright © 2016, Texas Instruments Incorporated
Figure 6-10. H4 UART Interface
When the UART RX buffer of the device passes the flow control threshold, it sets the HCI_RTS signal
high to stop transmission from the host.
When the HCI_CTS signal is set high, the device stops transmission on the interface. If HCI_CTS is set
high while transmitting a byte, the device finishes transmitting the byte and stops the transmission.
The H4 protocol device includes a mechanism that handles the transition between active mode and sleep
mode. The protocol occurs through the CTS and RTS UART lines and is known as the enhanced HCI low
level (eHCILL) power-management protocol.
For more information on the H4 UART protocol, see Volume 4 Host Controller Interface, Part A UART
Transport
Layer
of
the
Bluetooth
Core
Specifications
(www.bluetooth.org/en-us/specification/adoptedspecifications).
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6.4.2.2 3-Wire UART Interface—H5 Protocol
The H5 UART interface consists of three signals (see Figure 6-11):
•
•
•
TX
RX
GND
HCI_RX
HCI_TX
Host_RX
Host_TX
Host
CC2564C
GND
GND
Copyright © 2016, Texas Instruments Incorporated
Figure 6-11. H5 UART Interface
The H5 protocol supports the following features:
•
•
Software flow control (XON/XOFF)
Power management using the software messages:
–
–
–
WAKEUP
WOKEN
SLEEP
•
CRC data integrity check
For more information on the H5 UART protocol, see Volume 4 Host Controller Interface, Part D Three-
Wire UART Transport Layer of the Bluetooth Core Specifications
(www.bluetooth.org/en-us/specification/adoptedspecifications).
6.4.3 Digital Codec Interface
The codec interface is a fully programmable port to support seamless interfacing with different PCM and
I2S codec devices. The interface includes the following features:
•
•
•
•
•
•
•
Two voice channels
Master and slave modes
All voice coding schemes defined by the Bluetooth specification: linear, A-Law, and µ-Law
Long and short frames
Different data sizes, order, and positions
High flexibility to support a variety of codecs
Bus sharing: Data_Out is in the Hi-Z state when the interface is not transmitting voice data.
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6.4.3.1 Hardware Interface
The interface includes four signals:
•
•
•
•
Clock: configurable direction (input or output)
Frame_Sync and Word_Sync: configurable direction (input or output)
Data_In: input
Data_Out: output or tri-state signal
The CC2564C device can be the master of the interface when generating the Clock and Frame_Sync
signals or the slave when receiving these two signals.
For slave mode, clock input frequencies of up to 15 MHz are supported. At clock rates above 12 MHz, the
maximum data burst size is 32 bits.
For master mode, the device can generate any clock frequency from 64 kHz to 4.096 MHz.
6.4.3.2 I2S
When the codec interface is configured to support the I2S protocol, these settings are recommended:
•
•
Bidirectional, full-duplex interface
Two time slots per frame: time slot 0 for the left channel audio data; and time slot 1 for the right
channel audio data
•
The length of each time slot is configurable up to 40 serial clock cycles, and the length of the frame is
configurable up to 80 serial clock cycles
6.4.3.3 Data Format
The data format is fully configurable:
•
•
•
The data length can be from 8 to 320 bits in 1-bit increments when working with 2 channels, or up to
640 bits when working with 1 channel. The data length can be set independently for each channel.
The data position within a frame is also configurable within 1 clock (bit) resolution and can be set
independently (relative to the edge of the Frame_Sync signal) for each channel.
The Data_In and Data_Out bit order can be configured independently. For example; Data_In can start
with the most significant bit (MSB); Data_Out can start with the least significant bit (LSB). Each
channel is separately configurable. The inverse bit order (that is, LSB first) is supported only for
sample sizes up to 24 bits.
•
•
Data_In and Data_Out are not required to be the same length.
The Data_Out line is configured to Hi-Z output between data words. Data_Out can also be set for
permanent Hi-Z output, regardless of the data output. This configuration allows the device to be a bus
slave in a multislave PCM environment. At power up, Data_Out is configured as Hi-Z output.
6.4.3.4 Frame-Idle Period
The codec interface handles frame-idle periods, during which the clock pauses and becomes 0 at the end
of the frame after all data are transferred.
The device supports frame-idle periods both as master and slave of the codec bus.
When the device is the master of the interface, the frame-idle period is configurable. There are two
configurable parameters:
•
Clk_Idle_Start: indicates the number of clock cycles from the beginning of the frame to the beginning of
the frame-idle period. After Clk_Idle_Start clock cycles, the clock becomes 0.
•
Clk_Idle_End: indicates the time from the beginning of the frame to the end of the frame-idle period.
The time is given in multiples of clock periods.
The delta between Clk_Idle_Start and Clk_Idle_End is the clock idle period.
For example, for clock rate = 1 MHz, frame sync period = 10 kHz, Clk_Idle_Start = 60, Clk_Idle_End = 90.
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Between both Frame_Sync signals there are 70 clock cycles (instead of 100). The clock idle period starts
60 clock cycles after the beginning of the frame and lasts 90 – 60 = 30 clock cycles. Thus, the idle period
ends 100 – 90 = 10 clock cycles before the end of the frame. The data transmission must end before the
beginning of the idle period.
Figure 6-12 shows the frame idle timing.
Frame period
Frame_Sync
Data_In
Data_Out
Frame idle
Clock
Clk_Idle_Start
Clk_Idle_End
frmidle_swrs064
Figure 6-12. Frame Idle Period
6.4.3.5 Clock-Edge Operation
The codec interface of the device can work on the rising or the falling edge of the clock and can sample
the Frame_Sync signal and the data at inversed polarity.
Figure 6-13 shows the operation of a falling-edge-clock type of codec. The codec is the master of the bus.
The Frame_Sync signal is updated (by the codec) on the falling edge of the clock and is therefore
sampled (by the device) on the next rising clock. The data from the codec is sampled (by the device) on
the falling edge of the clock.
PCM FSYNC
PCM CLK
D7
D6
D5
D4
D2
D1
D0
D3
PCM DATA IN
CC256x
SAMPLE TIME
SWRS121-004
Copyright © 2016, Texas Instruments Incorporated
Figure 6-13. Negative Clock Edge Operation
6.4.3.6 Two-Channel Bus Example
Figure 6-14 shows a 2-channel bus in which the two channels have different word sizes and arbitrary
positions in the bus frame.
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...
...
Clock
FT
2
127 0
1
3
4
5
6
7
8
9
42 43 44
127 0
Fsync
MSB
bit bit bit bit bit bit bit bit
MSB
LSB
LSB
bit bit bit bit bit bit bit bit bit bit bit
10
...
...
Data_Out
Data_In
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
bit bit bit bit bit bit bit bit bit bit bit
10
bit bit bit bit bit bit bit bit
1
0
1
2
3
4
5
6
7
8
9
0
2
3
4
5
6
7
PCM_data_window
CH2 data
start FT = 43
CH1 data start FT = 0
CH1 data length = 11
CH2 data
length = 8
Fsync period = 128
Fsync length = 1
twochpcm_swrs064
NOTE: FT stands for frame timer.
Figure 6-14. 2-Channel Bus Timing
6.4.4 Assisted Modes
The CC2564C device contains an embedded coprocessor that can be used for multiple purposes (see 图
1-1). The CC2564C device uses the coprocessor to perform the LE functionality or to execute the
assisted HFP 1.6 (WBS) or assisted A2DP functions. Only one of these functions can be executed at a
time because they all use the same resources (that is, the coprocessor; see Table 3-1 for the modes of
operation supported by each device).
This section describes the assisted HFP 1.6 (WBS) and assisted A2DP modes of operation. These modes
of operation minimize host processing and power by taking advantage of the device coprocessor to
perform the voice and audio SBC processing required in HFP 1.6 (WBS) and A2DP profiles. This section
also compares the architecture of the assisted modes with the common implementation of the HFP 1.6
and A2DP profiles.
The assisted HFP 1.6 (WBS) and assisted A2DP modes of operation comply fully with the HFP 1.6 and
A2DP Bluetooth specifications. For more information on these profiles, see the corresponding Bluetooth
Profile Specification (www.bluetooth.org/en-us/specification/adopted-specifications).
6.4.4.1 Assisted HFP 1.6 (WBS)
The HFP 1.6 Profile Specification adds the requirement for WBS support. The WBS feature allows twice
the voice quality versus legacy voice coding schemes at the same air bandwidth (64 kbps). This feature is
achieved using a voice sampling rate of 16 kHz, a modified subband coding (mSBC) scheme, and a
packet loss concealment (PLC) algorithm. The mSBC scheme is a modified version of the mandatory
audio coding scheme used in the A2DP profile with the parameters listed in Table 6-3.
Table 6-3. mSBC Parameters
PARAMETER
Channel mode
VALUE
Mono
16 kHz
Loudness
8
Sampling rate
Allocation method
Subbands
Block length
Bitpool
15
26
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The assisted HFP 1.6 mode of operation implements this WBS feature on the embedded CC2564C
coprocessor. That is, the mSBC voice coding scheme and the PLC algorithm are executed in the
CC2564C coprocessor rather than in the host, thus minimizing host processing and power. One WBS
connection at a time is supported, and WBS and NBS connections cannot be used simultaneously in this
mode of operation. Figure 6-15 shows the architecture comparison between the common implementation
of the HFP 1.6 profile and the assisted HFP 1.6 solution.
HFP 1.6 Architecture
Assisted HFP 1.6 Architecture
Host Processor
Host Processor
16 kHz
16 bits
PCM
/
I2S
Audio
codec
HFP1.6
Profile
HFP1.6
Profile
mSBC
+ PLC
Control
Control
Data
Bluetooth Stack
Bluetooth Stack
SCO
L2CAP
L2CAP
HCI
HCI
HCI
Control
Data
Control
HCI
16 kHz
16 bits
PCM
/
I2S
Audio
codec
5ata
CC256x
Bluetooth Controller
CC256x
Bluetooth Controller
mSBC
+ PLC
Copyright © 2016, Texas Instruments Incorporated
Figure 6-15. HFP 1.6 Architecture Versus Assisted HFP 1.6 Architecture
For detailed information on the HFP 1.6 profile, see the Hands-Free Profile 1.6 Specification
(www.bluetooth.org/en-us/specification/adopted-specifications).
6.4.4.2 Assisted A2DP
The advanced audio distribution profile (A2DP) enables wireless transmission of high-quality mono or
stereo audio between two devices. A2DP defines two roles:
•
•
A2DP source is the transmitter of the audio stream.
A2DP sink is the receiver of the audio stream.
A typical use case streams music from a tablet, phone, or PC (the A2DP source) to headphones or
speakers (the A2DP sink). This section describes the architecture of these roles and compares them with
the corresponding assisted-A2DP architecture. To use the air bandwidth efficiently, the audio data must be
compressed in a proper format. The A2DP mandates support of the SBC scheme. Other audio coding
algorithms can be used; however, both Bluetooth devices must support the same coding scheme. SBC is
the only coding scheme spread out in all A2DP Bluetooth devices; thus, it is the only coding scheme
supported in the assisted A2DP modes. Table 6-4 lists the recommended parameters for the SBC scheme
in the assisted A2DP modes.
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Table 6-4. Recommended Parameters for the SBC Scheme in Assisted A2DP Modes
SBC
MID QUALITY
HIGH QUALITY
JOINT STEREO
ENCODER
SETTINGS(1)
MONO
JOINT STEREO
MONO
Sampling
frequency
(kHz)
44.1
19
48
44.1
48
33
79
44.1
31
48
44.1
48
51
Bitpool value
18
44
35
83
29
66
53
Resulting
frame length
(bytes)
46
70
119
115
Resulting bit
rate (Kbps)
127
132
229
237
193
198
328
345
(1) Other settings: Block length = 16; allocation method = loudness; subbands = 8.
The SBC scheme supports a wide variety of configurations to adjust the audio quality. Table 6-5 through
Table 6-12 list the supported SBC capabilities in the assisted A2DP modes.
Table 6-5. Channel Modes
CHANNEL MODE
STATUS
Supported
Supported
Supported
Supported
Mono
Dual channel
Stereo
Joint stereo
Table 6-6. Sampling Frequency
SAMPLING FREQUENCY (kHz)
STATUS
Supported
Supported
Supported
16
44.1
48
Table 6-7. Block Length
BLOCK LENGTH
STATUS
Supported
Supported
Supported
Supported
4
8
12
16
Table 6-8. Subbands
SUBBANDS
STATUS
Supported
Supported
4
8
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Table 6-9. Allocation Method
ALLOCATION METHOD
STATUS
SNR
Supported
Supported
Loudness
Table 6-10. Bitpool Values
BITPOOL RANGE
STATUS
Supported
Supported
Assisted A2DP sink: 2–54
Assisted A2DP source: 2–57
Table 6-11. L2CAP MTU Size
L2CAP MTU SIZE (BYTES)
Assisted A2DP sink: 260–800
Assisted A2DP source: 260–1021
STATUS
Supported
Supported
Table 6-12. Miscellaneous Parameters
ITEM
A2DP content protection
AVDTP service
VALUE
Protected
STATUS
Not supported
Supported
Supported
Supported
Basic type
L2CAP mode
Basic mode
L2CAP flush
Nonflushable
For detailed information on the A2DP profile, see the A2DP Profile Specification at Adopted Bluetooth
Core Specifications.
6.4.4.2.1 Assisted A2DP Sink
The role of the A2DP sink is to receive the audio stream in an A2DP Bluetooth connection. In this role, the
A2DP layer and its underlying layers are responsible for link management and data decoding. To handle
these tasks, two logic transports are defined:
•
•
Control and signaling logic transport
Data packet logic transport
The assisted A2DP takes advantage of this modularity to handle the data packet logic transport in the
CC2564C device. First, the assisted A2DP implements a light L2CAP layer (L-L2CAP) and light AVDTP
layer (L-AVDTP) to defragment the packets. Then the assisted A2DP performs the SBC decoding on-chip
to deliver raw audio data through the device PCM–I2S interface. Figure 6-16 shows the comparison
between a common A2DP sink architecture and the assisted A2DP sink architecture.
36
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A2DP Sink Architecture
Assisted A2DP Sink Architecture
Host Processor
Bluetooth Stack
Host Processor
Bluetooth Stack
44.1 kHz
48 kHz
PCM
/
I2S
Audio
codec
16 bits
A2DP
Profile
A2DP
Profile
SBC
AVDTP
AVDTP
L2CAP
Control
Data
Control
L2CAP
HCI
HCI
Contro
l
Control
Data
5ata
44.1 kHz
HCI
HCI
PCM
/
48 kHz
Audio
codec
16 bits
I2S
CC256x
Bluetooth Controller
CC256x
Bluetooth Controller
SBC
L-AVDTP
L-L2CAP
Copyright © 2016, Texas Instruments Incorporated
Figure 6-16. A2DP Sink Architecture Versus Assisted A2DP Sink Architecture
For more information on the A2DP sink role, see the A2DP Profile Specification at Adopted Bluetooth
Core Specifications.
6.4.4.2.2 Assisted A2DP Source
The role of the A2DP source is to transmit the audio stream in an A2DP Bluetooth connection. In this role,
the A2DP layer and its underlying layers are responsible for link management and data encoding. To
handle these tasks, two logic transports are defined:
•
•
Control and signaling logic transport
Data packet logic transport
The assisted A2DP takes advantage of this modularity to handle the data packet logic transport in the
CC2564C device. First, the assisted A2DP encodes the raw data from the CC2564C PCM–I2S interface
using an on-chip SBC encoder. Then the assisted A2DP implements an L-L2CAP layer and an L-AVDTP
layer to fragment and packetize the encoded audio data. Figure 6-17 shows the comparison between a
common A2DP source architecture and the assisted A2DP source architecture.
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A2DP Source Architecture
Assisted A2DP Source Architecture
Host Processor
Host Processor
Bluetooth Stack
Bluetooth Stack
44.1 kHz
48 kHz
PCM
/
I2S
Audio
codec
16 bits
A2DP
Profile
A2DP
Profile
SBC
AVDTP
AVDTP
/ontrol
5ata
/ontrol
L2CAP
HCI
L2CAP
HCI
/ontrol
5ata
/ontrol
5ata
44.1 kHz
48 kHz
HCI
HCI
PCM
/
I2S
Audio
codec
16 bits
CC256x
Bluetooth Controller
CC256x
Bluetooth Controller
SBC
L-AVDTP
L-L2CAP
Copyright © 2016, Texas Instruments Incorporated
Figure 6-17. A2DP Source Architecture Versus Assisted A2DP Source Architecture
For more information on the A2DP source role, see the A2DP Profile Specification at Adopted Bluetooth
Core Specifications.
6.5 Bluetooth BR and EDR Features
The CC2564C device complies with the Bluetooth 4.2 specification up to the HCI layer (for family
members and technology supported, see Table 3-1):
•
•
•
•
•
Up to seven active devices
Scatternet: Up to three piconets simultaneously, one as master and two as slaves
Up to two SCO links on the same piconet
Very fast AFH algorithm for asynchronous connection-oriented link (ACL) and eSCO link
Supports typical 12-dBm TX power without an external power amplifier (PA), thus improving Bluetooth
link robustness
•
•
DRP single-ended 50-Ω I/O for easy RF interfacing
Internal temperature detection and compensation to ensure minimal variation in RF performance over
temperature
•
Includes a 128-bit hardware encryption accelerator as defined by the Bluetooth specifications
38
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•
Flexible PCM and I2S digital codec interface:
–
–
–
–
–
–
–
Full flexibility of data format (linear, A-Law, µ-Law)
Data width
Data order
Sampling
Slot positioning
Master and slave modes
High clock rates up to 15 MHz for slave mode (or 4.096 MHz for master mode)
•
•
Support for all voice air-coding
–
–
–
–
–
CVSD
A-Law
µ-Law
Transparent (uncoded)
mSBC
The CC2564C device provides an assisted mode for the HFP 1.6 (wideband speech [WBS]) profile or
A2DP profile to reduce host processing and power.
6.6 Bluetooth low energy Description
The CC2564C device complies with the Bluetooth 4.2 specification up to the HCI layer (for the family
members and technology supported, see Table 3-1):
•
•
•
•
Solution optimized for proximity and sports use cases
Supports up to 10 simultaneous connections
Multiple sniff instances that are tightly coupled to achieve minimum power consumption
Independent buffering for low energy, allowing large numbers of multiple connections without affecting
BR or EDR performance
•
Built-in coexistence and prioritization handling
NOTE
The assisted modes (HFP 1.6 and A2DP) are not available when Bluetooth low energy is
enabled.
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6.7 Bluetooth Transport Layers
Figure 6-18 shows the Bluetooth transport layers.
UART transport layer
Host controller interface
General
modules:
Data
Control
Event
HCI vendor-
specific
HCI data handler
HCI command handler
Trace
Timers
Sleep
Data
Link manager
Data
Link controller
RF
SWRS121-016
Copyright © 2016, Texas Instruments Incorporated
Figure 6-18. Bluetooth Transport Layers
6.8 Changes from the CC2564B Device to the CC2564C Device
The CC2564C device includes the following changes:
•
Support added for standard HCI command for WBS to replace HCI VS command sequence
Part of the Core Specification Addendum 2 (CSA2)
–
•
•
•
Easy PCM interface integration when using both WBS (16 kHz) and NBS (8 kHz)
PLC support added for NBS (8 kHz) when working at 16-kHz PCM clock
Option added to start and stop the PCM clock as master on the PCM bus even when voice call is not
active or set a timer to extend the clock after voice or audio is removed
•
•
Link layer topology support—Acts concurrently as peripheral and central low-energy device
AFH algorithm enhancements—Improvements to the automatic frequency hopping algorithms
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7 Applications, Implementation, and Layout
NOTE
Information in the following Applications section is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes. Customers should validate and test
their design implementation to confirm system functionality.
7.1 Reference Design Schematics and BOM for Power and Radio Connections
Figure 7-1 shows the reference schematics for the VQFN-MR package. For complete schematics and
PCB layout guidelines, contact your TI representative.
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CC256XRVM
NC
Figure 7-1. Reference Schematics
42
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Table 7-1 lists the BOM for the VQFN-MR package.
Table 7-1. Bill of Materials
REF.
DES.
MANUFACTURER
PART NUMBER
ALT
PART
QTY
VALUE
NA
DESCRIPTION
MANUFACTURER
NOTES
Chip
antenna
Copper antenna
on PCB
1
6
2
2
2
ANT1
ANT_IIFA_CC2420_32mil_MIR NA
Capacitor, ceramic; 0.1-µF
IIFA_CC2420
Capacitor
Capacitor
Capacitor
Capacitor
0.1 µF
1.0 µF
12 pF
0.47 µF
Kemet
C0402C104K9RACTU
JMK105BJ105KV-F
6.3-V 10% X7R 0402
Capacitor, ceramic; 1.0-µF
6.3-V 10% X5R 0402
Taiyo Yuden
Capacitor, ceramic; 12 pF
6.3-V X5R 10% 0402
Murata Electronics
Taiyo Yuden
GRM1555C1H120JZ01D
JMK105BJ474KV-F
Capacitor, ceramic; 0.47-µF
6.3-V X5R ±10% 0402
DEA162450
BT_1260B3
(TDK)
Filter, ceramic bandpass,
2.45-GHz SMD
Place brown
marking up
1
FL1
2.45 GHz
Murata Electronics
LFB212G45SG8C341
Oscillator; 32.768-kHz 15-pF
1.5-V 3.3-V SMD
Abracon
Corporation
1
1
OSC1
U5
32.768 kHz 15 pF
CC2564CRVM
ASH7K-32.768KHZ-T
CC2564CRVM
Optional
CC2564C dual-mode Bluetooth
controller
Texas Instruments
NDK
TZ1325D
(Tai-Saw
TST)
1
1
Y1
26 MHz
22 pF
Crystal, 26 MHz
NX2016SA
Capacitor, ceramic; 22-pF
25-V 5% NP0 0201
Murata Electronics
North America
GRM0335C1E220JD01D
(EXS00A-CS06025)
C31
7.2 PCB Layout Guidelines
This section describes the PCB guidelines to speed up the PCB design using the CC256x VQFN device.
Following these guidelines ensures that the design will pass Bluetooth SIG certification and also minimizes
risk for regulatory certifications including FCC, ETSI, and CE. For more information, see CC256x QFN
PCB Guidelines.
7.2.1 General PCB Guidelines
General PCB guidelines follow:
•
•
You must verify the recommended PCB stackup in the PCB Design guidelines.
You must verify the dimensions of the QFN PCB footprint in the QFN Package Information section of
CC256x QFN PCB Guidelines and in Section 6.
•
The decoupling capacitors must be as close as possible to the QFN device.
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7.2.2 Power Supply Guidelines
Guidelines for the power supply follow:
•
•
•
The trace width must be at least 10 mils for the VBAT and VIO traces.
The length of the traces must be as short as possible (pin to pin).
Decoupling capacitors must be as close as possible to the QFN device:
–
–
The MLDO_IN capacitor must be close to pin B5.
The VDD_IO capacitor must be close to pins B18 and A17.
Guidelines for the LDOs follow:
•
The trace width for the trace between x_LDO_x pins and decoupling capacitors is at least 5 mils;
where possible, the recommended trace width is 10 mils.
•
•
Place the decoupling capacitor of MLDO_OUT (C20) as close as possible to pin A5.
These capacitors must close to the following pins:
–
–
–
The DIG_LDO_OUT capacitor must be close to ball B15.
The DIG_LDO_OUT capacitor must be close to ball B27.
The DIG_LDO_OUT capacitor must be close to ball B36.
•
•
The DIG_LDO_OUT capacitor connected to ball B36 must be isolated from the top layer GND (see the
Low-Dropout Capacitors section in CC256x QFN PCB Guidelines).
The decoupling capacitors for SRAM, ADCPPA, and CL1.5 LDO_OUT must be as close as possible to
their corresponding pins on the CC256x device.
•
•
•
•
Place the device and capacitors together on the top side.
The ground connection of each capacitor must be directly connected to solid ground layer (layer 2).
The capacitor that is directly connected to pin A12 should be close to the device.
Connect the DCO_LDO_OUT capacitor isolated from layer 1 ground directly to layer 2 solid ground.
Guidelines for the ground layer follow:
•
•
Layer 2 must be a solid ground plane.
Isolate VSS_FREF from ground on the top layer and route it directly to ground on the second layer
(see the Key VSS Ball section in CC256x QFN PCB Guidelines).
•
Isolate VSS_DCO (ball B11) from ground. Include VSS_DCO in the illustration of the DCO_LDO_OUT
capacitor (see the DCO_LDO_OUT section in CC256x QFN PCB Guidelines).
•
•
A minimum of 13 vias on the thermal pad are required to increase ground coupling.
Connect VSS_FREF (ball B3) directly to solid ground, not to the thermal pad.
44
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7.2.3 User Interfaces
Guidelines for the UART follow:
•
•
•
•
The trace width for the UART must be at least 5 mils.
Run the four UART lines as a bus interface.
Determine if clocks, DC supply, or RF traces are not near these UART traces.
The ground plane on layer 2 is solid below these lines and there is ground around these traces on the
top layer.
Guidelines for the PCM follow:
•
•
•
•
The trace width for the PCM must be at least 5 mils.
Run the four PCM lines as a bus interface and approximately the same length.
Determine if clocks, DC supply, RF traces, and LDO capacitors are not near these PCM traces.
The ground plane on layer 2 is solid below these lines and there is ground around these traces on the
top layer.
•
•
Guidelines for TX_DBG follow:
Check for an accessible test point on the board from TX_DBG pin B24.
7.2.4 Clock Interfaces
Guidelines for the slow clock follow:
•
•
•
The trace width for the slow clock must be at least 5 mils.
The signal lines for the slow clock must be as short as possible.
The ground plane on layer 2 is solid below these lines and there is ground around these traces on the
top layer.
Guidelines for the fast clock follow:
•
•
•
The trace width for the fast clock must be at least 5 mils.
Ensure that crystal tuning capacitors are close to crystal pads.
Make both traces (XTALM and XTALP) parallel as much as possible and approximately the same
length.
•
The ground plane on layer 2 is solid below these lines and there is ground around these traces on the
top layer.
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7.2.5 RF Interface
Guidelines for the RF Interface follow:
•
•
•
TI recommends using an RF shield (not mandatory).
Verify that RF traces are routed on the top layer and matched at 50 Ω with reference to ground.
Route the RF line between these NC pins:
–
–
–
–
NC_2 (A10)
NC_3 (A11)
NC_14 (B9)
NC_15 (B10)
These NC pins are grounded for better RF isolation.
NOTE
These pins are NC at the chip level, but TI recommends grounding them on the PCB layout
for better RF isolation.
•
•
Ensure the area underneath the BPF pads is grounded on layer 1 and layer 2.
Keep RF_IN and RF_OUT of the BPF pads clear of any ground fill (see the RF Trace section in
CC256x QFN PCB Guidelines).
•
Follow guidelines specified in the vendor-specific antenna design guides (including placement of
antenna).
•
•
•
Follow guidelines specified in the vendor-specific BPF design guides.
Verify that the Bluetooth RF trace is a 50-Ω, impedance-controlled trace with reference to solid ground.
Ensure that the RF trace length is as short as possible.
46
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8 器件和文档支持
8.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES
NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR
SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR
SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
8.2 工具与软件
设计套件与评估模块
CC256x Bluetooth® 硬件评估工具 这款直观的用户友好型 TI 工具用于评估 TI 蓝牙芯片,能够以完整软件
包的形式从 TI 网站下载。具体而言,该工具用于通过服务包 (SP) 配置蓝牙芯片属性,同时支
持测试 RF 性能。
有关开发支持工具的完整列表,请参见 TI CC256x wiki。有关定价和购买信息,请联系最近的 TI 销售办事
处或授权分销商。
8.3 器件命名规则
为了标明产品开发周期的阶段,TI 为所有部件号分配了前缀。这些前缀代表了产品开发的发展阶段,即从工
程原型直到完全合格的生产器件。
器件开发进化流程:
X
试验器件不一定代表最终器件的电气规范标准并且不可使用生产组装流程。
原型器件不一定是最终芯片模型并且不一定符合最终电气标准规范。
完全合格的芯片模型的生产版本。
P
无
CC2564C xxx
x
R = Large Reel
T = Small Reel
Prefix
CC2564C
X = Experimental device
Blank = Qualified device
YM7
ZLLL G3
Package Designator
RVM = VQFNP-MR
YFV = DSBGA
Generic Part Number
Copyright © 2016, Texas Instruments Incorporated
Y
M
7
= Last digit of the year
= Month in hex number, 1-C for Jan-Dec
= Primary site code for ANM
= Secondary site code for ANM
Z
LLL = Assembly lot code
= Pin 1 indicator
图 8-1. CC2564C 器件命名规则
图 8-2. 芯片标记(VQFN-MR 封装)
8.4 Community Resources
下列链接提供到 TI 社区资源的连接。 链接的内容由各个分销商“按照原样”提供。 这些内容并不构成 TI 技术
规范和标准且不一定反映 TI 的观点;请见 TI 的使用条款。
TI E2E™ Online Community The TI engineer-to-engineer (E2E) community was created to foster
collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge,
explore ideas and help solve problems with fellow engineers.
TI Embedded Processors Wiki Established to help developers get started with Embedded Processors
from Texas Instruments and to foster innovation and growth of general knowledge about the
hardware and software surrounding these devices.
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8.5 商标
E2E is a trademark of Texas Instruments.
ARM7TDMI is a registered trademark of ARM Limited.
由 is a registered trademark of Apple, Inc.
蓝牙 is a registered trademark of Bluetooth SIG, Inc.
All other trademarks are the property of their respective owners.
8.6 静电放电警告
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可
能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可
能会导致器件与其发布的规格不相符。
8.7 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.
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9 机械、封装和可订购信息
以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知
且不对本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本,请查阅左侧的导航栏
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PACKAGE OPTION ADDENDUM
www.ti.com
29-Dec-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
CC2564CRVMR
CC2564CRVMT
ACTIVE
ACTIVE
VQFNP-MR
VQFNP-MR
RVM
RVM
76
76
2500 RoHS & Green
250 RoHS & Green
SN
Level-3-260C-168 HR
Level-3-260C-168 HR
-40 to 85
-40 to 85
CC2564C
CC2564C
SN
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
29-Dec-2021
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Apr-2023
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
CC2564CRVMR
VQFNP-
MR
RVM
76
2500
330.0
16.4
8.35
8.35
1.7
12.0
16.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Apr-2023
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
VQFNP-MR RVM 76
SPQ
Length (mm) Width (mm) Height (mm)
350.0 350.0 43.0
CC2564CRVMR
2500
Pack Materials-Page 2
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