CD4010BQDRQ1 [TI]

CMOS HEX BUFFER/CONVERTER; CMOS六缓冲器/转换器
CD4010BQDRQ1
型号: CD4010BQDRQ1
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

CMOS HEX BUFFER/CONVERTER
CMOS六缓冲器/转换器

转换器 栅极 触发器 逻辑集成电路 光电二极管 CD PC
文件: 总14页 (文件大小:4471K)
中文:  中文翻译
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CD4010B-Q1  
www.ti.com  
SCHS379A MARCH 2010REVISED JANUARY 2012  
CMOS HEX BUFFER/CONVERTER  
Check for Samples: CD4010B-Q1  
1
FEATURES  
D PACKAGE  
(TOP VIEW)  
Qualified for Automotive Applications  
100% Tested for Quiescent Current at 20 V  
Maximum Input Current of 1 µA at 18 V Over  
Full Package-Temperature Range:  
100 nA at 18 V and 25°C  
5-V, 10-V, and 15-V Parametric Ratings  
Latch-Up Performance Meets 100 mA per  
JESD 78, Class I  
APPLICATIONS  
CMOS to DTL/TTL Hex Converter  
CMOS Current "Sink" or "Source" Driver  
CMOS High-to-Low Logic-Level Converter  
Multiplexer: 1-to-6 or 6-to-1  
DESCRIPTION  
CD4010B hex buffer/converter may be used as CMOS to TTL or DTL logic-level converters or CMOS  
high-sink-current drivers.  
The CD4050B is the preferred hex buffer replacement for the CD4010B in all applications except multiplexers.  
For applications not requiring high sink current or voltage conversion, the CD4069UB hex inverter is  
recommended.  
The CD4010B is supplied in 16-lead hermetic dual-in-line ceramic (D) packages.  
ORDERING INFORMATION(1)  
TA  
PACKAGE(2)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING  
CD4010BQ  
40°C to 125°C  
SOIC D  
Reel of 2500  
CD4010BQDRQ1  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 20102012, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
CD4010B-Q1  
SCHS379A MARCH 2010REVISED JANUARY 2012  
www.ti.com  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more  
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.  
Figure 1. Schematic Diagram One of Six Identical Stages  
Functional Diagram  
2
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Copyright © 20102012, Texas Instruments Incorporated  
Product Folder Link(s): CD4010B-Q1  
CD4010B-Q1  
www.ti.com  
SCHS379A MARCH 2010REVISED JANUARY 2012  
ABSOLUTE MAXIMUM RATINGS(1)  
over operating free-air temperature range (unless otherwise noted)  
VALUE  
0.5 to +20  
0.5 to VDD +0.5  
±10  
UNIT  
V
VDD DC supply voltage range, voltages referenced to VSS terminal  
Input voltage range, all inputs  
V
DC input current, any one input  
mA  
TA = 40°C to +100°C  
500  
PD  
Power dissipation per package  
mW  
Derate linearly at  
12 mW/°C to 200 mW  
TA = +100°C to +125°C  
Device dissipation per output  
transistor  
TA = full package-temperature range  
(all packages types)  
100  
mW  
TA  
Operating temperature range  
Storage temperature range  
40 to +125  
65 to +150  
100  
°C  
°C  
Tstg  
Latch-up performance per JESD 78, Class I  
mA  
Human-body model (HBM)  
Machine model (MM)  
500  
ESD Electrostatic discharge rating(2)  
100  
V
Charged-Device Model (CDM)  
1000  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) Tested in accordance with AEC-Q100.  
RECOMMENDED OPERATING CONDITIONS  
MIN  
3
MAX  
18  
UNIT  
V
VDD  
VCC  
VI  
Supply voltage range(1)  
Input voltage range  
3
VDD  
VDD  
VCC  
V
(1) The CD4010B has high-to-low level voltage conversion capability, but not low-to-high level; therefore, it is recommended that  
DD > VI > VCC  
V
.
Copyright © 20102012, Texas Instruments Incorporated  
Submit Documentation Feedback  
3
Product Folder Link(s): CD4010B-Q1  
CD4010B-Q1  
SCHS379A MARCH 2010REVISED JANUARY 2012  
www.ti.com  
STATIC ELECTRICAL CHARACTERISTICS  
over operating free-air temperature range (unless otherwise noted)  
TEST CONDITIONS  
PARAMETER  
LIMITS AT INDICATED TEMPERATURES (°C)  
+25  
UNIT  
VO  
VIN  
VDD  
40  
+85  
+125  
MIN  
TYP  
0.02  
0.02  
0.02  
0.04  
3.4  
4
MAX  
0, 5  
0, 10  
0, 15  
0,20  
0, 5  
5
10  
15  
20  
4.5  
5
1
2
30  
60  
30  
60  
1
2
IDD Max  
IOL Min  
IOH Min  
Quiescent device current  
Output low (sink) current  
Output high (source) current  
µA  
mA  
mA  
4
120  
600  
2.1  
2.4  
6.4  
19  
120  
600  
1.8  
2.1  
5.6  
16  
4
20  
3.1  
3.6  
9.6  
40  
20  
0.4  
0.4  
0.5  
1.5  
4.6  
2.5  
9.5  
13.5  
2.6  
3
0, 5  
0, 10  
0, 15  
0, 5  
10  
15  
5
8
10  
24  
36  
0.23 0.18 0.15  
0.2  
0.8  
0.45  
1.5  
0.4  
1.6  
0.9  
3  
0, 5  
5
0.9  
0.5  
1.6  
0.65 0.58  
0.38 0.33  
0, 10  
0, 15  
0, 5  
10  
15  
5
1.25  
0.05  
0.05  
0.05  
4.95  
9.95  
14.95  
1.5  
3
1.1  
0
0.05  
0.05  
0.05  
VOL Max  
VOH Min  
VIL Max  
Output voltage: Low-level  
Output voltage: High-level  
Input low voltage  
0, 10  
0, 15  
0, 5  
10  
15  
5
0
V
V
V
0
4.95  
9.95  
5
0, 10  
0, 15  
10  
15  
5
10  
14.95  
15  
0.5  
1
1.5  
3
10  
15  
5
1.5  
4.5  
9
4
4
3.5  
7
3.5  
7
VIH Min  
IIN Max  
Input high voltage  
Input current  
10  
15  
18  
V
13.5  
11  
11  
0, 18  
±0.1  
±1  
±1  
±105  
±0.1  
µA  
4
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Copyright © 20102012, Texas Instruments Incorporated  
Product Folder Link(s): CD4010B-Q1  
 
CD4010B-Q1  
www.ti.com  
SCHS379A MARCH 2010REVISED JANUARY 2012  
DYNAMIC ELECTRICAL CHARACTERISTICS  
TA = 25°C, Input tr/tf = 20 ns, CL = 50 pf, RL = 200 kΩ  
TEST CONDITIONS  
LIMITS ALL PKGS  
PARAMETER  
UNIT  
VDD  
(V)  
VI  
(V)  
VCC  
(V)  
TYP  
MAX  
5
5
5
10  
5
100  
50  
50  
35  
35  
65  
35  
30  
25  
20  
150  
75  
55  
35  
20  
15  
5
200  
100  
100  
70  
10  
10  
15  
15  
5
10  
10  
15  
15  
5
tPLH  
Propagation delay time: low-to-high  
ns  
15  
5
70  
5
130  
70  
10  
10  
15  
15  
5
10  
10  
15  
15  
5
10  
5
tPHL  
Propagation time: high-to-low  
Transition time: low-to-high  
70  
ns  
ns  
15  
5
50  
40  
5
350  
150  
110  
90  
tTLH  
10  
15  
5
10  
15  
5
10  
15  
5
tTHL  
Transition time: high-to-low  
Input capacitance  
10  
15  
10  
15  
10  
15  
45  
ns  
40  
CIN  
7.5  
pF  
Copyright © 20102012, Texas Instruments Incorporated  
Submit Documentation Feedback  
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Product Folder Link(s): CD4010B-Q1  
CD4010B-Q1  
SCHS379A MARCH 2010REVISED JANUARY 2012  
www.ti.com  
TYPICAL CHARACTERISTICS  
Figure 2. Minimum and Maximum Voltage Transfer  
Characteristics (VDD = 5 V)  
Figure 3. Minimum and Maximum Voltage Transfer  
Characteristics (VDD = 10 V)  
Figure 4. Minimum and Maximum Voltage Transfer  
Characteristics (VDD = 15 V)  
Figure 5. Typical Voltage Transfer Characteristics as a  
Function of Temperature  
Figure 6. Typical Output Low (Sink) Current  
Characteristics  
Figure 7. Minimum Output Low (Sink) Current  
Characteristics  
6
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Copyright © 20102012, Texas Instruments Incorporated  
Product Folder Link(s): CD4010B-Q1  
CD4010B-Q1  
www.ti.com  
SCHS379A MARCH 2010REVISED JANUARY 2012  
TYPICAL CHARACTERISTICS (continued)  
Figure 8. Typical Output High (Source) Current  
Characteristics  
Figure 9. Minimum Output High (Source) Current  
Characteristics  
Figure 10. Typical Low-to-High Propagation Delay Time vs  
Load Capacitance  
Figure 11. Typical High-to-Low Propagation Delay Time vs  
Load Capacitance  
Figure 12. Typical Low-to-High Transition Time vs Load  
Capacitance  
Figure 13. Typical High-to-Low Transition Time vs Load  
Capacitance  
Copyright © 20102012, Texas Instruments Incorporated  
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Product Folder Link(s): CD4010B-Q1  
CD4010B-Q1  
SCHS379A MARCH 2010REVISED JANUARY 2012  
www.ti.com  
TYPICAL CHARACTERISTICS (continued)  
Figure 14. Typical Dissipation Characteristics  
8
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Copyright © 20102012, Texas Instruments Incorporated  
Product Folder Link(s): CD4010B-Q1  
CD4010B-Q1  
www.ti.com  
SCHS379A MARCH 2010REVISED JANUARY 2012  
PARAMETER MEASUREMENT INFORMATION  
Figure 15. Quiescent Device Current Test Circuit  
Figure 16. Noise Immunity Test Circuit  
Figure 17. Input Current Test Circuit  
Note: Dimensions in parentheses are in millimeters and are dereived from the basic inch dimensions as indicated. Grid  
graduation are in mils (103 inch).  
Figure 18. Dimensions and Layout  
Copyright © 20102012, Texas Instruments Incorporated  
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Product Folder Link(s): CD4010B-Q1  
CD4010B-Q1  
SCHS379A MARCH 2010REVISED JANUARY 2012  
www.ti.com  
REVISION HISTORY  
Changes from Original (March 2010) to Revision A  
Page  
Changed STATIC ELECTRICAL CHARACTERISTICS table to correct typos and misplaced data .................................... 4  
10  
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Copyright © 20102012, Texas Instruments Incorporated  
Product Folder Link(s): CD4010B-Q1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
16-Apr-2010  
PACKAGING INFORMATION  
Orderable Device  
Status (1)  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
Drawing  
CD4010BQDRQ1  
ACTIVE  
SOIC  
D
16  
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and  
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS  
compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
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OTHER QUALIFIED VERSIONS OF CD4010B-Q1 :  
Catalog: CD4010B  
Military: CD4010B-MIL  
NOTE: Qualified Version Definitions:  
Catalog - TI's standard catalog product  
Military - QML certified for Military and Defense Applications  
Addendum-Page 1  
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