CD74HC86M96 [TI]
High-Speed CMOS Logic Quad 2-Input EXCLUSIVE-OR Gate; 高速CMOS逻辑四路2输入异或门![CD74HC86M96](http://pdffile.icpdf.com/pdf1/p00086/img/icpdf/CD74HC86M_454208_icpdf.jpg)
型号: | CD74HC86M96 |
厂家: | ![]() |
描述: | High-Speed CMOS Logic Quad 2-Input EXCLUSIVE-OR Gate |
文件: | 总11页 (文件大小:270K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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CD54HC86, CD74HC86,
CD54HCT86, CD74HCT86
Data sheet acquired from Harris Semiconductor
SCHS137D
High-Speed CMOS Logic
August 1997 - Revised September 2003
Quad 2-Input EXCLUSIVE-OR Gate
Features
Description
• Typical Propagation Delay: 9ns at V
o
= 5V,
The ’HC86 and ’HCT86 contain four independent
EXCLUSIVE OR gates in one package. They provide the
system designer with a means for implementation of the
EXCLUSIVE OR function. Logic gates utilize silicon gate
CMOS technology to achieve operating speeds similar to
LSTTL gates with the low power consumption of standard
CMOS integrated circuits. All devices have the ability to drive
10 LSTTL loads. The HCT logic family is functionally pin
compatible with the standard LS logic family.
CC
C = 15pF, T = 25 C
L
A
[ /Title
(CD74
HC86,
CD74
HCT86
)
• Fanout (Over Temperature Range)
- Standard Outputs. . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
o
o
• Wide Operating Temperature Range . . . -55 C to 125 C
• Balanced Propagation Delay and Transition Times
• Significant Power Reduction Compared to LSTTL
Logic ICs
/Sub-
ject
Ordering Information
• HC Types
(High
Speed
CMOS
Logic
Quad
2-Input
EXCL
USIVE
OR
TEMP. RANGE
o
- 2V to 6V Operation
PART NUMBER
CD54HC86F3A
CD54HCT86F3A
CD74HC86E
( C)
PACKAGE
14 Ld CERDIP
14 Ld CERDIP
14 Ld PDIP
14 Ld SOIC
14 Ld SOIC
14 Ld SOIC
14 Ld PDIP
14 Ld SOIC
14 Ld SOIC
14 Ld SOIC
- High Noise Immunity: N = 30%, N = 30% of V
IL IH CC
at V
= 5V
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
CC
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
V = 0.8V (Max), V = 2V (Min)
IL IH
CD74HC86M
- CMOS Input Compatibility, I ≤ 1µA at V , V
OL OH
l
CD74HC86MT
CD74HC86M96
CD74HCT86E
CD74HCT86M
CD74HCT86MT
CD74HCT86M96
Applications
• Logical Comparators
• Parity Generators and Checkers
• Adders and Subtractors
NOTE: When ordering, use the entire part number. The suffix 96
denotes tape and reel. The suffix T denotes a small-quantity reel of
250.
Pinout
CD54HC86, CD54HCT86
(CERDIP)
CD74HC86, CD74HCT86
(PDIP, SOIC)
TOP VIEW
1A
1B
1
2
3
4
5
6
7
14 V
CC
13 4B
12 4A
11 4Y
10 3B
1Y
2A
2B
2Y
9
8
3A
3Y
GND
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © 2003, Texas Instruments Incorporated
1
CD54HC86, CD74HC86, CD54HCT86, CD74HCT86
Functional Diagram
14
13
12
11
10
9
1
2
3
4
5
6
7
V
1A
1B
CC
4B
4A
4Y
3B
3A
3Y
1Y
2A
2B
2Y
8
GND
TRUTH TABLE
INPUTS
OUTPUT
nA
L
nB
L
nY
L
L
H
L
H
H
L
H
H
H
H = High Voltage Level, L = Low Voltage Level
Logic Symbol
nA
nB
nY
2
CD54HC86, CD74HC86, CD54HCT86, CD74HCT86
Absolute Maximum Ratings
Thermal Information
o
DC Supply Voltage, V
. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
Thermal Resistance (Typical, Note 1)
θ
( C/W)
CC
DC Input Diode Current, I
For V < -0.5V or V > V
JA
IK
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . .
M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . .
80
86
+ 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA
OK
For V < -0.5V or V > V
I
I
CC
o
DC Output Diode Current, I
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150 C
Maximum Storage Temperature Range . . . . . . . . . .-65 C to 150 C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300 C
o
o
+ 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
O
O
CC
o
DC Output Source or Sink Current per Output Pin, I
O
For V > -0.5V or V < V
+ 0.5V . . . . . . . . . . . . . . . . . . . .±25mA
O
O
CC
(SOIC - Lead Tips Only)
DC V
or Ground Current, I
I
. . . . . . . . . . . . . . . . . .±50mA
CC
CC or GND
Operating Conditions
o
o
Temperature Range (T ) . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C
A
Supply Voltage Range, V
CC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, V , V . . . . . . . . . . . . . . . . . 0V to V
I
O
CC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. The package thermal impedance is calculated in accordance with JESD 51-7.
DC Electrical Specifications
TEST
CONDITIONS
o
o
o
o
o
25 C
-40 C TO +85 C -55 C TO 125 C
PARAMETER
HC TYPES
SYMBOL V (V)
I
(mA)
V
(V) MIN TYP MAX
MIN
MAX
MIN
MAX
UNITS
I
O
CC
High Level Input
Voltage
V
-
-
-
2
1.5
3.15
4.2
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
3.15
4.2
-
-
1.5
3.15
4.2
-
-
V
V
V
V
V
V
V
V
V
V
V
IH
4.5
-
-
-
6
2
-
-
-
Low Level Input
Voltage
V
-
0.5
0.5
0.5
IL
4.5
6
-
1.35
-
1.35
-
1.35
-
1.8
-
1.8
-
1.8
High Level Output
Voltage
CMOS Loads
V
V
or
-0.02
2
1.9
4.4
5.9
3.98
5.48
-
-
-
-
-
1.9
4.4
5.9
3.84
5.34
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
OH
IH
V
IL
-0.02
-0.02
-4
4.5
6
High Level Output
Voltage
TTL Loads
4.5
6
-5.2
Low Level Output
Voltage
CMOS Loads
V
V
V
or
0.02
0.02
0.02
4
2
4.5
6
-
-
-
-
-
-
-
-
-
-
0.1
0.1
-
-
-
-
-
0.1
0.1
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
V
V
V
V
V
OL
IH
IL
0.1
0.1
Low Level Output
Voltage
TTL Loads
4.5
6
0.26
0.26
0.33
0.33
5.2
Input Leakage
Current
I
V
or
-
6
6
-
-
-
-
±0.1
-
-
±1
-
-
±1
µA
µA
I
CC
GND
Quiescent Device
Current
I
V
or
0
2
20
40
CC
CC
GND
3
CD54HC86, CD74HC86, CD54HCT86, CD74HCT86
DC Electrical Specifications (Continued)
TEST
CONDITIONS
o
o
o
o
o
25 C
-40 C TO +85 C -55 C TO 125 C
PARAMETER
HCT TYPES
SYMBOL V (V)
I
(mA)
V (V) MIN TYP MAX
CC
MIN
MAX
MIN
MAX
UNITS
I
O
High Level Input
Voltage
V
-
-
-
-
4.5 to
5.5
2
-
-
-
-
-
0.8
-
2
-
-
0.8
-
2
-
-
0.8
-
V
V
V
IH
Low Level Input
Voltage
V
4.5 to
5.5
IL
High Level Output
Voltage
CMOS Loads
V
V
V
or
-0.02
4.5
4.5
4.5
4.5
5.5
5.5
4.4
4.4
4.4
OH
IH
V
IL
High Level Output
Voltage
TTL Loads
-4
3.98
-
-
-
-
3.84
-
3.7
-
V
V
Low Level Output
Voltage
CMOS Loads
V
or
0.02
-
-
-
0.1
-
-
-
0.1
0.33
±1
-
-
-
0.1
0.4
±1
OL
IH
V
IL
Low Level Output
Voltage
TTL Loads
4
-
0.26
±0.1
V
Input Leakage
Current
I
V
µA
I
CC
and
GND
Quiescent Device
Current
I
V
or
0
-
-
-
-
2
-
-
20
-
-
40
µA
µA
CC
CC
GND
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
∆I
CC
(Note 2)
V
4.5 to
5.5
100
360
450
490
CC
- 2.1
NOTE:
2. For dual-supply systems theoretical worst case (V = 2.4V, V
I
= 5.5V) specification is 1.8mA.
CC
HCT Input Loading Table
INPUT
All
UNIT LOADS
1
NOTE: Unit Load is ∆I
Specifications table, e.g. 360µA max at 25 C.
limit specified in DC Electrical
o
CC
Switching Specifications Input t , t = 6ns
r
f
o
o
o
o
o
25 C
-40 C TO 85 C -55 C TO 125 C
TEST
V
CC
PARAMETER
HC TYPES
SYMBOL CONDITIONS (V)
MIN TYP MAX
MIN
MAX
MIN
MAX
UNITS
Propagation Delay,Input to
Output (Figure 1)
t
, t
PLH PHL
C = 50pF
2
4.5
6
-
-
-
-
-
-
120
24
20
-
-
-
-
-
150
30
26
-
-
-
-
-
180
36
31
-
ns
ns
ns
ns
L
-
Propagation Delay, Data Input to
Output Y
t , t
PLH PHL
C = 15pF
5
9
L
Transition Times (Figure 1)
t
, t
TLH THL
C = 50pF
L
2
4.5
6
-
-
-
-
-
-
-
-
75
15
13
10
-
-
-
-
95
19
16
10
-
-
-
-
110
22
ns
ns
ns
pF
19
Input Capacitance
C
-
-
10
I
4
CD54HC86, CD74HC86, CD54HCT86, CD74HCT86
Switching Specifications Input t , t = 6ns (Continued)
r
f
o
o
o
o
o
25 C
-40 C TO 85 C -55 C TO 125 C
TEST
V
CC
PARAMETER
SYMBOL CONDITIONS (V)
MIN TYP MAX
MIN
MAX
MIN
MAX
UNITS
Power Dissipation Capacitance
(Notes 3, 4)
C
-
5
-
22
-
-
-
-
-
pF
PD
HCT TYPES
Propagation Delay, Input to
Output (Figure 2)
t
, t
PLH PHL
C = 50pF
4.5
5
-
-
-
32
-
-
-
40
-
-
-
48
-
ns
ns
L
Propagation Delay, Data Input to
Output Y
t , t
PLH PHL
C = 15pF
13
L
Transition Times (Figure 2)
Input Capacitance
t
, t
TLH THL
C = 50pF
L
4.5
-
-
-
-
-
-
15
10
-
-
-
-
19
10
-
-
-
-
22
10
-
ns
pF
pF
C
-
-
I
Power Dissipation Capacitance
(Notes 3, 4)
C
5
27
PD
NOTES:
3. C
is used to determine the dynamic power consumption, per gate.
2
PD
4. P = V
f (C
PD
+ C ) where f = input frequency, C = output load capacitance, V = supply voltage.
CC
D
CC
i
L
i
L
Test Circuits and Waveforms
t = 6ns
t = 6ns
f
t = 6ns
f
t = 6ns
r
r
V
3V
CC
90%
50%
10%
2.7V
1.3V
0.3V
INPUT
INPUT
t
GND
GND
t
t
TLH
t
THL
THL
TLH
90%
50%
10%
90%
1.3V
INVERTING
OUTPUT
INVERTING
OUTPUT
10%
t
t
PLH
t
t
PHL
PLH
PHL
FIGURE 1. HC AND HCU TRANSITION TIMES AND PROPAGA-
TION DELAY TIMES, COMBINATION LOGIC
FIGURE 2. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
5
PACKAGE OPTION ADDENDUM
www.ti.com
17-Oct-2005
PACKAGING INFORMATION
Orderable Device
Status (1)
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
CDIP
CDIP
CDIP
CDIP
PDIP
Drawing
5962-8984401CA
CD54HC86F3A
CD54HCT86F
CD54HCT86F3A
CD74HC86E
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
J
J
14
14
14
14
14
1
1
TBD
TBD
TBD
TBD
Call TI
Call TI
Call TI
Call TI
Level-NC-NC-NC
Level-NC-NC-NC
Level-NC-NC-NC
Level-NC-NC-NC
J
1
J
1
N
25
Pb-Free
(RoHS)
CU NIPDAU Level-NC-NC-NC
CD74HC86EE4
CD74HC86M
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
PDIP
SOIC
SOIC
SOIC
SOIC
SOIC
SOIC
PDIP
PDIP
SOIC
SOIC
SOIC
SOIC
SOIC
SOIC
N
D
D
D
D
D
D
N
N
D
D
D
D
D
D
14
14
14
14
14
14
14
14
14
14
14
14
14
14
14
25
Pb-Free
(RoHS)
CU NIPDAU Level-NC-NC-NC
50 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
CD74HC86M96
CD74HC86M96E4
CD74HC86ME4
CD74HC86MT
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
50 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
CD74HC86MTE4
CD74HCT86E
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
25
Pb-Free
(RoHS)
CU NIPDAU Level-NC-NC-NC
CD74HCT86EE4
CD74HCT86M
25
Pb-Free
(RoHS)
CU NIPDAU Level-NC-NC-NC
50 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
CD74HCT86M96
CD74HCT86M96E4
CD74HCT86ME4
CD74HCT86MT
CD74HCT86MTE4
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
50 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan
-
The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS
&
no Sb/Br)
-
please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
17-Oct-2005
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 2
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