CD74HCT11M96E4 [TI]
High-Speed CMOS Logic Triple 3-Input AND Gate; 高速CMOS逻辑三路3输入与门型号: | CD74HCT11M96E4 |
厂家: | TEXAS INSTRUMENTS |
描述: | High-Speed CMOS Logic Triple 3-Input AND Gate |
文件: | 总11页 (文件大小:261K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CD54HC11, CD74HC11,
CD54HCT11, CD74HCT11
Data sheet acquired from Harris Semiconductor
SCHS273E
High-Speed CMOS Logic
Triple 3-Input AND Gate
August 1997 - Revised September 2003
Features
Description
• Buffered Inputs
The ’HC11 and ’HCT11 logic gates utilize silicon gate CMOS
technology to achieve operating speeds similar to LSTTL
gates with the low power consumption of standard CMOS
integrated circuits. All devices have the ability to drive 10
LSTTL loads. The HCT logic family is functionally pin
compatible with the standard LS logic family.
• Typical Propagation Delay: 8ns at V
o
= 5V,
[ /Title
(CD54
HCT11
,
CD74
HC11,
CD74
HCT11
)
CC
C = 15pF, T = 25 C
L
A
• Fanout (Over Temperature Range)
- Standard Outputs. . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
Ordering Information
o
o
• Wide Operating Temperature Range . . . -55 C to 125 C
• Balanced Propagation Delay and Transition Times
TEMP. RANGE
o
PART NUMBER
CD54HC11F3A
CD54HCT11F3A
CD74HC11E
( C)
PACKAGE
14 Ld CERDIP
14 Ld CERDIP
14 Ld PDIP
14 Ld SOIC
14 Ld SOIC
14 Ld SOIC
14 Ld PDIP
14 Ld SOIC
14 Ld SOIC
14 Ld SOIC
• Significant Power Reduction Compared to LSTTL
Logic ICs
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
/Sub-
ject
(High
• HC Types
- 2V to 6V Operation
- High Noise Immunity: N = 30%, N = 30% of V
IL IH CC
CD74HC11M
at V
= 5V
CC
CD74HC11MT
CD74HC11M96
CD74HCT11E
CD74HCT11M
CD74HCT11MT
CD74HCT11M96
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
V = 0.8V (Max), V = 2V (Min)
IL IH
- CMOS Input Compatibility, I ≤ 1µA at V , V
OL OH
l
NOTE: When ordering, use the entire part number. The suffix 96
denotes tape and reel. The suffix T denotes a small-quantity reel
of 250.
Pinout
CD54HC11, CD54HCT11
(CERDIP)
CD74HC11, CD74HCT11
(PDIP, SOIC)
TOP VIEW
1A
1B
1
2
3
4
5
6
7
14 V
CC
13 1C
12 1Y
11 3C
10 3B
2A
2B
2C
2Y
9
8
3A
3Y
GND
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © 2003, Texas Instruments Incorporated
1
CD54HC11, CD74HC11, CD54HCT11, CD74HCT11
Functional Diagram
14
13
12
11
10
9
1
2
3
4
5
6
7
V
1A
1B
CC
1C
1Y
3C
3B
3A
3Y
2A
2B
2C
2Y
8
GND
TRUTH TABLE
INPUTS
OUTPUT
nA
L
nB
L
nC
nY
L
L
H
L
L
L
L
L
H
H
L
L
L
H
L
L
H
H
H
H
L
L
H
L
L
H
H
L
H
H
Logic Symbol
nA
nB
nC
nY
2
CD54HC11, CD74HC11, CD54HCT11, CD74HCT11
Absolute Maximum Ratings
Thermal Information
o
DC Supply Voltage, V
. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
Thermal Resistance (Typical, Note 1)
θ
( C/W)
JA
CC
DC Input Diode Current, I
For V < -0.5V or V > V
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Maximum Junction Temperature (Hermetic Package or Die) . . . 175 C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150 C
Maximum Storage Temperature Range . . . . . . . . . .-65 C to 150 C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300 C
IK
+ 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA
OK
For V < -0.5V or V > V
I
I
CC
o
DC Output Diode Current, I
o
+ 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
O
O
CC
o
o
DC Output Source or Sink Current per Output Pin, I
O
o
For V > -0.5V or V < V
+ 0.5V . . . . . . . . . . . . . . . . . . . .±25mA
O
O
CC
DC V
or Ground Current, I
I
. . . . . . . . . . . . . . . . . .±50mA
(SOIC - Lead Tips Only)
CC
CC or GND
Operating Conditions
o
o
Temperature Range (T ) . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C
A
Supply Voltage Range, V
CC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, V , V . . . . . . . . . . . . . . . . . 0V to V
I
O
CC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. The package thermal impedance is calculated in accordance with JESD 51-7.
DC Electrical Specifications
TEST
CONDITIONS
o
o
o
o
o
25 C
-40 C TO 85 C
-55 C TO 125 C
PARAMETER
HC TYPES
SYMBOL V (V)
I
(mA)
V
(V) MIN TYP MAX
MIN
MAX
MIN
MAX
UNITS
I
O
CC
High Level Input
Voltage
V
-
-
-
2
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
-
1.5
-
-
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
IH
4.5
3.15
-
-
3.15
-
-
3.15
6
2
4.2
4.2
4.2
-
Low Level Input
Voltage
V
-
-
0.5
1.35
1.8
-
-
0.5
1.35
1.8
-
-
0.5
1.35
1.8
-
IL
4.5
6
-
-
-
-
-
-
High Level Output
Voltage
CMOS Loads
V
V
or
-0.02
2
1.9
1.9
1.9
OH
IH
V
IL
-0.02
-0.02
-
4.5
6
4.4
-
4.4
-
4.4
-
5.9
-
5.9
-
5.9
-
High Level Output
Voltage
TTL Loads
-
-
-
-
-
-
-
-4
4.5
6
3.98
-
3.84
-
3.7
-
-5.2
0.02
0.02
0.02
-
5.48
-
5.34
-
5.2
-
Low Level Output
Voltage
V
V
or
2
-
-
-
-
-
-
-
0.1
0.1
0.1
-
-
-
-
-
-
-
-
0.1
0.1
0.1
-
-
-
-
-
-
-
-
0.1
0.1
0.1
-
OL
IH
V
IL
4.5
6
Low Level Output
Voltage
TTL Loads
-
4
4.5
6
0.26
0.26
±0.1
0.33
0.33
±1
0.4
0.4
±1
5.2
-
Input Leakage
Current
I
V
or
6
I
CC
GND
3
CD54HC11, CD74HC11, CD54HCT11, CD74HCT11
DC Electrical Specifications (Continued)
TEST
CONDITIONS
o
o
o
o
o
25 C
-40 C TO 85 C
-55 C TO 125 C
PARAMETER
SYMBOL V (V)
I
(mA)
V
(V) MIN TYP MAX
MIN
MAX
MIN
MAX
UNITS
I
O
CC
Quiescent Device
Current
I
V
GND
or
0
6
-
-
2
-
20
-
40
µA
CC
CC
HCT TYPES
High Level Input
Voltage
V
-
-
-
-
4.5 to
5.5
2
-
-
-
-
-
-
0.8
-
2
-
-
0.8
-
2
-
-
0.8
-
V
V
V
V
IH
Low Level Input
Voltage
V
4.5 to
5.5
IL
High Level Output
Voltage CMOS Loads
V
V
or
IH
-0.02
4.5
4.4
3.98
4.4
3.84
4.4
3.7
OH
V
IL
High Level Output
Voltage
-4
4.5
-
-
-
TTL Loads
Low Level Output
Voltage
CMOS Loads
V
V
V
or
IH
0.02
4.5
4.5
5.5
5.5
-
-
-
-
-
0.1
-
-
-
0.1
0.33
±1
-
-
-
0.1
0.4
±1
V
V
OL
IL
Low Level Output
Voltage
TTL Loads
4
-
0.26
±0.1
Input Leakage
Current
I
V
and
GND
µA
I
CC
Quiescent Device
Current
I
V
or
-
-
-
-
-
2
-
-
20
-
-
40
µA
µA
CC
CC
GND
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
∆I
CC
(Note 2)
V
4.5 to
5.5
100
360
450
490
CC
- 2.1
NOTE:
2. For dual-supply systems theoretical worst case (V = 2.4V, V
I
= 5.5V) specification is 1.8mA.
CC
HCT Input Loading Table
INPUT
All
UNIT LOADS
0.5
NOTE: Unit Load is ∆I
Specifications table, e.g. 360µA max at 25 C.
limit specified in DC Electrical
o
CC
Switching Specifications Input t , t = 6ns
r
f
o
o
o
o
o
25 C
-40 C TO 85 C -55 C TO 125 C
TEST
V
CC
PARAMETER
HC TYPES
SYMBOL CONDITIONS (V)
MIN TYP MAX
MIN
MAX
MIN
MAX
UNITS
Propagation Delay,
Input to Output (Figure 1)
t
, t
PLH PHL
C = 50pF
2
4.5
6
-
-
-
-
-
-
100
20
17
-
-
-
-
-
125
25
21
-
-
-
-
-
150
30
26
-
ns
ns
ns
ns
L
-
Propagation Delay, Data Input to
Output Y
t , t
PLH PHL
C = 15pF
5
8
L
4
CD54HC11, CD74HC11, CD54HCT11, CD74HCT11
Switching Specifications Input t , t = 6ns (Continued)
r
f
o
o
o
o
o
25 C
-40 C TO 85 C -55 C TO 125 C
TEST
V
CC
PARAMETER
SYMBOL CONDITIONS (V)
MIN TYP MAX
MIN
MAX
95
19
16
10
-
MIN
MAX
110
22
UNITS
ns
Transition Times (Figure 1)
t
, t
TLH THL
C = 50pF
2
4.5
6
-
-
-
-
-
-
-
75
15
13
10
-
-
-
-
-
-
-
-
-
-
-
L
ns
-
19
ns
Input Capacitance
C
C = 50pF
-
-
10
pF
I
L
Power Dissipation Capacitance
(Notes 3, 4)
C
C = 15pF
5
26
-
pF
PD
L
HCT TYPES
Propagation Delay, Input to
Output (Figure 2)
t
, t
PLH PHL
C = 50pF
4.5
5
-
-
-
28
-
-
-
35
-
-
-
42
-
ns
ns
L
Propagation Delay, Data Input to
Output Y
t , t
PLH PHL
C = 15pF
11
L
Transition Times (Figure 2)
Input Capacitance
t
, t
TLH THL
C = 50pF
4.5
-
-
-
-
-
-
15
10
-
-
-
-
19
10
-
-
-
-
22
10
-
ns
pF
pF
L
C
C = 50pF
L
I
Power Dissipation Capacitance
(Notes 3, 4)
C
-
5
28
PD
NOTES:
3. C
is used to determine the dynamic power consumption, per gate.
2
PD
4. P = V
f (C
PD
+ C ) where f = input frequency, C = output load capacitance, V = supply voltage.
CC
D
CC
i
L
i
L
Test Circuits and Waveforms
t = 6ns
f
t = 6ns
t = 6ns
t = 6ns
r
r
f
V
3V
CC
90%
50%
10%
2.7V
1.3V
0.3V
INPUT
INPUT
GND
GND
t
t
t
t
THL
TLH
THL
TLH
90%
1.3V
90%
50%
10%
INVERTING
OUTPUT
INVERTING
OUTPUT
10%
t
t
PLH
PHL
t
t
PLH
PHL
FIGURE 1. HC TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
FIGURE 2. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
5
PACKAGE OPTION ADDENDUM
www.ti.com
6-Dec-2006
PACKAGING INFORMATION
Orderable Device
Status (1)
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
CDIP
CDIP
CDIP
CDIP
CDIP
PDIP
Drawing
5962-8970901CA
CD54HC11F
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
J
J
14
14
14
14
14
14
1
1
TBD
TBD
TBD
TBD
TBD
A42 SNPB
A42 SNPB
A42 SNPB
A42 SNPB
A42 SNPB
N / A for Pkg Type
N / A for Pkg Type
N / A for Pkg Type
N / A for Pkg Type
N / A for Pkg Type
CD54HC11F3A
CD54HCT11F
CD54HCT11F3A
CD74HC11E
J
1
J
1
J
1
N
25
Pb-Free
(RoHS)
CU NIPDAU N / A for Pkg Type
CD74HC11EE4
CD74HC11M
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
PDIP
SOIC
SOIC
SOIC
SOIC
SOIC
SOIC
PDIP
PDIP
SOIC
SOIC
SOIC
SOIC
SOIC
SOIC
N
D
D
D
D
D
D
N
N
D
D
D
D
D
D
14
14
14
14
14
14
14
14
14
14
14
14
14
14
14
25
Pb-Free
(RoHS)
CU NIPDAU N / A for Pkg Type
50 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
CD74HC11M96
CD74HC11M96E4
CD74HC11ME4
CD74HC11MT
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
50 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
CD74HC11MTE4
CD74HCT11E
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
25
Pb-Free
(RoHS)
CU NIPDAU N / A for Pkg Type
CD74HCT11EE4
CD74HCT11M
25
Pb-Free
(RoHS)
CU NIPDAU N / A for Pkg Type
50 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
CD74HCT11M96
CD74HCT11M96E4
CD74HCT11ME4
CD74HCT11MT
CD74HCT11MTE4
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
50 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
6-Dec-2006
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 2
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相关型号:
SI9130DB
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