CSD18511KCS [TI]

采用 TO-220 封装的单路、2.6mΩ、40V、N 沟道 NexFET™ 功率 MOSFET;


型号：	CSD18511KCS
厂家：	TEXAS INSTRUMENTS
描述：	采用 TO-220 封装的单路、2.6mΩ、40V、N 沟道 NexFET™ 功率 MOSFET 局域网开关脉冲晶体管
文件：	总13页 (文件大小：856K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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CSD18511KCS

ZHCSGJ9 –JULY 2017

CSD18511KCS 40V N 通道 NexFET™功率金属氧化物半导体场效应晶体

管 (MOSFET)

1 特性

产品概要

•

低 Q_g和 Q_gd

低 R_DS(ON)

T_A= 25°C

V_DS

典型值

单位

漏源电压

低热阻

Q_g

栅极电荷总量 (10V)

栅极电荷（栅极到漏极）

63.9

9.7

雪崩额定值

Q_gd

V_GS= 4.5V

V_GS= 10V

1.8

3.2

2.1

无铅引脚镀层

符合 RoHS 环保标准

无卤素

R_DS(on)漏源导通电阻

V_GS(th)阈值电压

mΩ

晶体管 (TO)-220 塑料封装

器件信息⁽¹⁾

数量

器件

CSD18511KCS

包装介质

管

封装

运输

管

2 应用范围

TO-220

塑料封装

•

次级侧同步整流器

电机控制

(1) 要了解所有可用封装，请见数据表末尾的可订购产品附录。

绝对最大额定值

3 说明

T_A= 25°C

值

单位

此 40V、2.1mΩ、TO-220 NexFET™功率 MOSFET

被设计成大大降低功率转换损耗的理想选择。

Drain (Pin 2)

V_DS

V_GS

漏源电压

栅源电压

±20

110

持续漏极电流（受封装限制）

持续漏极电流（受芯片限制），T_C= 25°C 时

测得

194

137

I_D

持续漏极电流（受芯片限制），T_C= 100°C

时测得

I_DM

P_D

脉冲漏极电流⁽¹⁾

400

188

Gate

(Pin 1)

功率耗散

T_J，工作结温，

T_stg

-55 至 175

°C

储存温度

雪崩能量，单一脉冲

I_D= 56A，L = 0.1mH，R_G= 25Ω

E_AS

156

Source (Pin 3)

(1) 最大 R_θJC= 0.8°C/W，脉冲持续时间 ≤ 100μs，占空比 ≤ 1%。

R_DS(on)与 V_GS对比

栅极电荷

I_D= 100 A

V_DS= 20 V

T_C= 25°C, I _D= 100 A

T_C= 125°C, I _D= 100 A

V_GS- Gate-to-Source Voltage (V)

Q_g- Gate Charge (nC)

D007

D004

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

English Data Sheet: SLPS548

CSD18511KCS

ZHCSGJ9 –JULY 2017

www.ti.com.cn

特性.......................................................................... 1

器件和文档支持........................................................ 7

6.1 接收文档更新通知 ..................................................... 7

6.2 社区资源.................................................................... 7

6.3 商标........................................................................... 7

6.4 静电放电警告............................................................. 7

6.5 Glossary.................................................................... 7

机械、封装和可订购信息 ......................................... 8

7.1 KCS 封装尺寸 ........................................................... 8

应用范围................................................................... 1

说明.......................................................................... 1

修订历史记录 ........................................................... 2

Specifications......................................................... 3

5.1 Electrical Characteristics........................................... 3

5.2 Thermal Information.................................................. 3

5.3 Typical MOSFET Characteristics.............................. 4

4 修订历史记录

日期

修订版本

注意

2017 年 7 月

初始发行版。

CSD18511KCS

www.ti.com.cn

ZHCSGJ9 –JULY 2017

5 Specifications

5.1 Electrical Characteristics

T_A= 25°C (unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

STATIC CHARACTERISTICS

BV_DSS

I_DSS

Drain-to-source voltage

V_GS= 0 V, I_D= 250 μA

Drain-to-source leakage current

Gate-to-source leakage current

Gate-to-source threshold voltage

V_GS= 0 V, V_DS= 32 V

V_DS= 0 V, V_GS= 20 V

V_DS= V_GS, I_D= 250 μA

V_GS= 4.5 V, I_D= 100 A

V_GS= 10 V, I_D= 100 A

V_DS= 4 V, I_D= 100 A

100

2.4

4.2

2.6

μA

I_GSS

V_GS(th)

1.5

1.8

3.2

2.1

249

R_DS(on)

g_fs

Drain-to-source on-resistance

Transconductance

mΩ

DYNAMIC CHARACTERISTICS

C_iss

C_oss

C_rss

R_G

Input capacitance

4570

454

235

0.9

5940

591

306

1.8

Ω

Output capacitance

Reverse transfer capacitance

Series gate resistance

Gate charge total (4.5 V)

Gate charge total (10 V)

Gate charge gate-to-drain

Gate charge gate-to-source

Gate charge at V_th

Output charge

V_GS= 0 V, V_DS= 20 V, ƒ = 1 MHz

Q_g

Q_gd

Q_gs

Q_g(th)

Q_oss

t_d(on)

t_r

V_DS= 20 V, I_D= 100 A

V_DS= 20 V, V_GS= 0 V

9.7

17.9

7.4

20.7

Turnon delay time

Rise time

V_DS= 20 V, V_GS= 10 V,

I_DS= 100 A, R_G= 0 Ω

t_d(off)

t_f

Turnoff delay time

Fall time

DIODE CHARACTERISTICS

V_SD

Q_rr

t_rr

Diode forward voltage

Reverse recovery charge

Reverse recovery time

I_SD= 100 A, V_GS= 0 V

0.9

1.0

V_DS= 20 V, I_F= 100 A,

di/dt = 300 A/μs

5.2 Thermal Information

T_A= 25°C (unless otherwise stated)

THERMAL METRIC

Junction-to-case thermal resistance

Junction-to-ambient thermal resistance

MIN

TYP

MAX

UNIT

°C/W

R_θJC

R_θJA

0.8

CSD18511KCS

ZHCSGJ9 –JULY 2017

www.ti.com.cn

5.3 Typical MOSFET Characteristics

T_A= 25°C (unless otherwise stated)

Figure 1. Transient Thermal Impedance

200

175

150

125

100

200

T_C= 125°C

T_C= 25°C

T_C= -55°C

175

150

125

100

V_GS= 4.5 V

V_GS= 8 V

V_GS= 10 V

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

1.5

2.5

3.5

4.5

V_DS- Drain-to-Source Voltage (V)

V_GS- Gate-to-Source Voltage (V)

D002

D003

V_DS= 5 V

Figure 2. Saturation Characteristics

Figure 3. Transfer Characteristics

CSD18511KCS

www.ti.com.cn

ZHCSGJ9 –JULY 2017

Typical MOSFET Characteristics (continued)

T_A= 25°C (unless otherwise stated)

10000

1000

100

C_iss= C_gd+ C_gs

C_oss= C_ds+ C_gd

C_rss= C_gd

V_DS- Drain-to-Source Voltage (V)

Q_g- Gate Charge (nC)

D005

D004

V_DS= 20 V

I_D= 100 A

Figure 5. Capacitance

Figure 4. Gate Charge

2.6

T_C= 25°C, I _D= 100 A

T_C= 125°C, I _D= 100 A

2.4

2.2

1.8

1.6

1.4

1.2

0.8

0.6

-75 -50 -25

25 50 75 100 125 150 175 200

V_GS- Gate-to-Source Voltage (V)

T_C- Case Temperature (èC)

D007

D006

I_D= 250 µA

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 6. Threshold Voltage vs Temperature

100

2.2

T_C= 25èC

T_C= 125èC

V_GS= 4.5 V

V_GS= 10 V

1.8

1.6

1.4

1.2

0.1

0.01

0.8

0.6

0.4

0.001

0.0001

-75 -50 -25

25 50 75 100 125 150 175 200

0.2

0.4

0.6

0.8

T_C- Case Temperature (°C)

V_SD- Source-to-Drain Voltage (V)

D008

D009

I_D= 100 A

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

CSD18511KCS

ZHCSGJ9 –JULY 2017

www.ti.com.cn

Typical MOSFET Characteristics (continued)

T_A= 25°C (unless otherwise stated)

1000

100

10 ms

1 ms

100 µs

10 µs

T_C= 25è C

T_C= 125è C

0.1

100

0.01

0.1

T_AV- Time in Avalanche (ms)

V_DS- Drain-to-Source Voltage (V)

D010

D011

Single pulse, max R_θJC= 0.8°C/W

Figure 10. Maximum Safe Operating Area

Figure 11. Single Pulse Unclamped Inductive Switching

150

125

100

-50 -25

75 100 125 150 175 200

T_C- Case Temperature (èC)

D012

Max R_θJC= 0.8°C/W

Figure 12. Maximum Drain Current vs Temperature

CSD18511KCS

www.ti.com.cn

ZHCSGJ9 –JULY 2017

6 器件和文档支持

6.1 接收文档更新通知

要接收文档更新通知，请导航至德州仪器 TI.com.cn 上的器件产品文件夹。请单击右上角的通知我进行注册，即可

收到任意产品信息更改每周摘要。有关更改的详细信息，请查看任意已修订文档中包含的修订历史记录。

6.2 社区资源

下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范，

并且不一定反映 TI 的观点；请参阅 TI 的《使用条款》。

TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在

e2e.ti.com 中，您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。

设计支持

TI 参考设计支持可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。

6.3 商标

NexFET, E2E are trademarks of Texas Instruments.

All other trademarks are the property of their respective owners.

6.4 静电放电警告

这些装置包含有限的内置 ESD 保护。存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损

伤。

6.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

CSD18511KCS

ZHCSGJ9 –JULY 2017

www.ti.com.cn

7 机械、封装和可订购信息

以下页面包括机械、封装和可订购信息。这些信息是指定器件的最新可用数据。这些数据发生变化时，我们可能不

会另行通知或修订此文档。如欲获取此产品说明书的浏览器版本，请参阅左侧的导航栏。

7.1 KCS 封装尺寸

表 1. 引脚配置

位置

引脚 1

名称

栅极

漏极

源极

引脚 2 / 标签

引脚 3

PACKAGE OPTION ADDENDUM

www.ti.com

10-Dec-2020

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

CSD18511KCS

ACTIVE

TO-220

KCS

RoHS-Exempt

& Green

N / A for Pkg Type

-55 to 175

CSD18511KCS

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

5-Jan-2022

TUBE

*All dimensions are nominal

Device

Package Name Package Type

KCS TO-220

Pins

SPQ

L (mm)

W (mm)

T (µm)

B (mm)

CSD18511KCS

532

34.1

700

9.6

Pack Materials-Page 1

PACKAGE OUTLINE

KCS0003B

TO-220 - 19.65 mm max height

SCALE 0.850

TO-220

4.7

4.4

1.32

1.22

10.36

9.96

8.55

8.15

2.9

2.6

6.5

6.1

(6.3)

(

3.84)

12.5

12.1

19.65 MAX

9.25

9.05

3.9 MAX

13.12

12.70

0.47

0.34

0.90

0.77

2.79

2.59

2X 2.54

1.36

1.23

5.08

4222214/B 08/2018

NOTES:

1. Dimensions are in millimeters. Any dimension in brackets or parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. Reference JEDEC registration TO-220.

www.ti.com

EXAMPLE BOARD LAYOUT

KCS0003B

TO-220 - 19.65 mm max height

TO-220

0.07 MAX

ALL AROUND

2X (1.7)

METAL

3X (1.2)

2X SOLDER MASK

OPENING

(1.7)

0.07 MAX

ALL AROUND

R (0.05)

(2.54)

SOLDER MASK

OPENING

(5.08)

LAND PATTERN EXAMPLE

NON-SOLDER MASK DEFINED

SCALE:15X

4222214/B 08/2018

www.ti.com

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CSD18511KCS [TI]

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