CSD95377Q4M [TI]
20V 35A SON 3.5 x 4.5mm 同步降压 NexFET™ 功率级;型号: | CSD95377Q4M |
厂家: | TEXAS INSTRUMENTS |
描述: | 20V 35A SON 3.5 x 4.5mm 同步降压 NexFET™ 功率级 开关 光电二极管 |
文件: | 总20页 (文件大小:827K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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CSD95377Q4M
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
CSD95377Q4M 同步降压 NexFET™ 功率级
1 特性
2 应用
1
•
电流为 15A 时的效率约为 94%
最大额定持续电流 35A
•
•
服务器、网络互联和电信系统中的负载点同步降压
多相 Vcore、双倍数据速率 (DDR) 和图形解决方案
•
•
•
•
•
•
•
•
•
•
•
•
•
高频运行(高达 2MHz)
高密度 3.5mm × 4.5mm SON 封装
超低电感封装
3 说明
CSD95377Q4M NexFET™功率级的设计针对高功
率、高密度同步降压转换器应用进行了高度优化。此产
品集成了驱动器 IC 和功率 MOSFET,从而可以实现
功率级开关功能。此驱动器 IC 具有内置可选二极管仿
真功能,该功能支持非连续导通模式 (DCM) 运行,从
而提高轻负载效率。该组合在小型 3.5mm x 4.5mm 外
形尺寸封装中提供高电流、高效率和高速开关功能。此
外,PCB 封装已经过优化,可帮助减少设计时间并简
化总体系统设计。
系统优化的 PCB 封装
兼容 3.3V 和 5V PWM 信号
支持强制连续传导模式 (FCCM) 的二极管仿真模式
输入电压最高可达 16V
三态 PWM 输入
集成型自举二极管
击穿保护
符合 RoHS 环保标准-无铅引脚镀层
无卤素
器件信息(1)
器件
包装介质
13 英寸卷带 2500
7 英寸卷带 250
数量
封装
发货
CSD95377Q4M
CSD95377Q4MT
3.50mm × 4.50mm
SON 塑料封装
卷带
封装
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
.
应用图表
典型功率级效率与功率损耗
VIN
100
90
80
70
60
50
40
9
CSD95377Q4M
7.5
6
VOUT
VCC
VDD = 5 V
VIN = 12 V
VOUT = 1.8 V
LOUT = 0.29 mH
fSW = 500 kHz
TA = 25èC
4.5
3
VCC
PWM1
+Is1
-Is2
VOUT
VOUT
SS
1.5
0
-Is2
+Is2
RT
0
5
10
15
20
25
30
35
Output Current (A)
PWM2
D000
PGND
Multi-Phase
Controller
CSD95377Q4M
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLPS584
CSD95377Q4M
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
www.ti.com.cn
目录
8.1 Application Information.............................................. 9
8.2 Typical Application ................................................... 9
8.3 System Example ..................................................... 12
Layout ................................................................... 14
9.1 Layout Guidelines ................................................... 14
9.2 Layout Example ...................................................... 14
9.3 Thermal Considerations.......................................... 14
1
2
3
4
5
6
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 5
Detailed Description .............................................. 6
7.1 Overview ................................................................... 6
7.2 Functional Block Diagram ......................................... 6
7.3 Feature Description................................................... 6
7.4 Device Functional Modes.......................................... 8
Application and Implementation .......................... 9
9
10 器件和文档支持 ..................................................... 15
10.1 接收文档更新通知 ................................................. 15
10.2 社区资源................................................................ 15
10.3 商标....................................................................... 15
10.4 静电放电警告......................................................... 15
10.5 Glossary................................................................ 15
11 机械、封装和可订购信息....................................... 16
11.1 机械制图................................................................ 16
11.2 建议印刷电路板 (PCB) 焊盘图案........................... 17
11.3 建议模版开口......................................................... 17
7
8
4 修订历史记录
Changes from Revision A (January 2017) to Revision B
Page
•
•
•
将特性从“最大额定持续电流 30A”改为“最大额定持续电流 35A”............................................................................................. 1
更新了典型功率级效率和功率损耗图以反映 35A 最大电流。................................................................................................. 1
Changed the IOUT Continuous output current MAX value From: 30 A To: 35 A in the Recommended Operating
Conditions table. .................................................................................................................................................................... 4
•
•
Updated Figure 4, Figure 5, Figure 6, Figure 7, Figure 8, Figure 9, Figure 10, Figure 11, and Figure 15 to reflect 35
A maximum current. ............................................................................................................................................................ 10
Changed the calculating values in the Design Example to reflect 35 A maximum current. ................................................ 13
Changes from Original (December 2015) to Revision A
Page
•
•
Changed unit for Hysteresis parameter from mV : to V in the Electrical Characteristics table.............................................. 5
已添加 接收文档更新通知部分至器件和文档支持部分.......................................................................................................... 15
2
Copyright © 2015–2017, Texas Instruments Incorporated
CSD95377Q4M
www.ti.com.cn
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
5 Pin Configuration and Functions
SON 3.5 × 4.5 mm
Top View
SKIP#
VDD
1
2
3
8
PWM
7
6
BOOT
PGND
BOOT_R
9
PGND
VSW
VIN
4
5
Pin Functions
PIN
DESCRIPTION
NO. NAME
This pin enables the diode emulation function. When this pin is held low, Diode Emulation Mode is enabled for the
sync FET. When SKIP# is high, the CSD95377Q4M operates in Forced Continuous Conduction Mode. A tri-state
voltage on SKIP# puts the driver into a very-low power state.
1
SKIP#
2
3
4
5
6
VDD
Supply voltage to gate drivers and internal circuitry.
PGND
VSW
Power ground, needs to be connected to pin 9 and PCB.
Voltage switching node – pin connection to the output inductor.
Input voltage pin. Connect input capacitors close to this pin.
VIN
BOOT_R
Bootstrap capacitor connection. Connect a minimum 0.1-µF, 16-V, X5R ceramic capacitor from BOOT to BOOT_R
pins. The bootstrap capacitor provides the charge to turn on the control FET. The bootstrap diode is integrated.
7
BOOT
Boot_R is internally connected to VSW
.
Pulse width modulated tri-state input from external controller. Logic low sets control FET gate low and sync FET gate
high. Logic high sets control FET gate high and sync FET gate low. Open or Hi-Z sets both MOSFET gates low if
greater than the tri-state shutdown hold-off time (t3HT).
8
9
PWM
PGND
Power ground.
Copyright © 2015–2017, Texas Instruments Incorporated
3
CSD95377Q4M
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
www.ti.com.cn
6 Specifications
6.1 Absolute Maximum Ratings
TA = 25°C (unless otherwise noted)(1)
MIN
–0.3
–0.3
–7
MAX
UNIT
V
VIN to PGND
20
20
23
6
VSW to PGND , VIN to VSW
VSW to PGND, VIN to VSW (<10 ns)
VDD to PGND
V
V
–0.3
–0.3
–0.3
–2
V
PWM, SKIP# to PGND
BOOT to PGND
6
V
25
28
6
V
BOOT to PGND (<10 ns)
BOOT to BOOT_R
V
–0.3
V
BOOT to BOOT_R (duty cycle < 0.2%)
8
V
PD
TJ
Power dissipation
8
W
°C
°C
Operating temperature
Storage temperature
–40
–55
150
150
Tstg
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
±1000
±500
UNIT
Human-body model (HBM)(1)
Charged-device model (CDM)(2)
V(ESD)
Electrostatic discharge
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
TA = 25°C (unless otherwise noted)
MIN
MAX UNIT
VDD
Gate drive voltage
Input supply voltage
4.5
5.5
16
V
V
(1)
VIN
IOUT
IOUT-PK
ƒSW
Continuous output current
Peak output current(2)(3)
Switching frequency
35
A
VIN = 12 V, VDD = 5 V, VOUT = 1.8 V,
ƒSW = 500 kHz, LOUT = 0.29 µH(2)
70
A
CBST = 0.1 µF (min)
2000
85%
kHz
On-time duty cycle
Minimum PWM On-time
Operating temperature
40
ns
°C
–40
125
(1) Operating at high VIN can create excessive AC voltage overshoots on the switch node (VSW) during MOSFET switching transients. For
reliable operation, the switch node (VSW) to ground voltage must remain at or below the Absolute Maximum Ratings.
(2) Peak output current is applied for tp = 10 ms, duty cycle ≤ 1%.
(3) Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins.
6.4 Thermal Information
TA = 25°C (unless otherwise noted)
THERMAL METRIC
Thermal resistance junction-to-case (top of package)(1)
Junction-to-board thermal resistance(2)
MIN
TYP
MAX UNIT
22.8 °C/W
2.5 °C/W
RθJC(top)
RθJB
(1)
(2)
R
θJC is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in, 0.06-in (1.52-mm)
thick FR4 board.
θJB value based on hottest board temperature within 1 mm of the package.
R
4
Copyright © 2015–2017, Texas Instruments Incorporated
CSD95377Q4M
www.ti.com.cn
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
6.5 Electrical Characteristics
TA = 25°C, VDD = POR to 5.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
PLOSS
VIN = 12 V, VDD = 5 V, VOUT = 1.8 V, IOUT = 15 A,
ƒSW = 500 kHz, LOUT = 0.29 µH, TJ = 25°C
Power loss(1)
Power loss(1)
1.6
1.8
W
W
VIN = 12 V, VDD = 5 V, VOUT = 1.8 V, IOUT = 15 A,
ƒSW = 500 kHz, LOUT = 0.29 µH, TJ = 125°C
VIN
IQ
VIN quiescent current
PWM = float
1
µA
VDD
PWM = float, VSKIP# = VDD or 0 V
VSKIP# = float
130
8
IDD
IDD
Standby supply current
Operating supply current
µA
PWM = 50% duty cycle, ƒSW = 500 kHz
8.6
mA
POWER-ON RESET AND UNDERVOLTAGE LOCKOUT
VDD rising
VDD falling
Power-on reset
UVLO
4.15
V
V
V
3.7
Hysteresis
0.2
PWM AND SKIP# I/O SPECIFICATIONS
Pullup to VDD
1700
800
kΩ
kΩ
V
RI
Input impedance
Pulldown (to GND)
VIH
Logic level high
2.65
1.3
VIL
Logic level low
0.6
2
V
VIHH
Hysteresis
0.2
V
VTS
Tri-state voltage
V
tTHOLD(off1)
tTHOLD(off2)
tTSKF
Tri-state activation time (falling) PWM
Tri-state activation time (rising) PWM
Tri-state activation time (falling) SKIP#
Tri-state activation time (rising) SKIP#
Tri-state exit time PWM(2)
Tri-state exit time SKIP#(2)
60
60
1
ns
ns
ns
µs
ns
µs
tTSKR
1
t3RD(PWM)
t3RD(SKIP#)
BOOTSTRAP SWITCH
VFBST Forward voltage
IRLEAK
Reverse leakage(2)
100
50
IF = 10 mA
120
240
2
mV
µA
VBOOT – VDD = 25 V
(1) Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins.
(2) Specified by design.
Copyright © 2015–2017, Texas Instruments Incorporated
5
CSD95377Q4M
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
www.ti.com.cn
7 Detailed Description
7.1 Overview
The CSD95377Q4M™ power stage is a highly-optimized design for use in a high-power, high-density
synchronous buck converter.
7.2 Functional Block Diagram
VDD
7
5
BOOT
VIN
+
DRVL
Control
FET
+
DRVH
Level Shift
VUVLO
6
4
BOOT_R
VSW
+
+
+
VDD
1 V
1.7Meg
3-State
Logic
SKIP#
1
800k
VDD
2
VDD
+
1 V
1.7Meg
Sync
FET
3-State
Logic
DRVL
8
3
PWM
800k
PGND
9
PGND
Copyright © 2016, Texas Instruments Incorporated
7.3 Feature Description
7.3.1 Powering CSD95377Q4M and Gate Drivers
An external VDD voltage is required to supply the integrated gate driver IC and provide the necessary gate drive
power for the MOSFETs. TI recommends a 1-µF, 10-V, X5R or higher ceramic capacitor to bypass VDD pin to
PGND. A bootstrap circuit to provide gate drive power for the control FET is also included. The bootstrap supply to
drive the control FET is generated by connecting a 100-nF, 16-V, X5R ceramic capacitor between BOOT and
BOOT_R pins. An optional RBOOT resistor can be used to slow down the turnon speed of the control FET and
reduce voltage spikes on the VSW node. A typical 1-Ω to 4.7-Ω value is a compromise between switching loss
and VSW spike amplitude.
7.3.2 Undervoltage Lockout (UVLO) Protection
The UVLO comparator evaluates the VDD voltage level. As VVDD rises, both the control FET and sync FET gates
hold actively low at all times until VVDD reaches the higher UVLO threshold (VUVLO_H). Then the driver becomes
operational and responds to PWM and SKIP# commands. If VDD falls below the lower UVLO threshold (VUVLO_L
= VUVLO_H – hysteresis), the device disables the driver and drives the outputs of the control FET and Sync FET
gates actively low. Figure 1 shows this function.
CAUTION
Do not start the driver in the very-low power mode (SKIP# = Tri-state).
6
Copyright © 2015–2017, Texas Instruments Incorporated
CSD95377Q4M
www.ti.com.cn
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
Feature Description (continued)
V
UVLO_H
V
UVLO_L
V
VDD
Driver On
UDG-12218
Figure 1. UVLO Operation
7.3.3 PWM Pin
The PWM pin incorporates an input tri-state function. The device forces the gate driver outputs to low when
PWM is driven into the tri-state window and the driver enters a low-power state with zero exit latency. The pin
incorporates a weak pullup to maintain the voltage within the tri-state window during low-power modes.
Operation into and out of tri-state mode follows the timing diagram outlined in Figure 2.
When VDD reaches the UVLO_H level, a tri-state voltage range (window) is set for the PWM input voltage. The
window is defined as the PWM voltage range between PWM logic high (VIH) and logic low (VIL) thresholds. The
device sets high-level input voltage and low-level input voltage threshold levels to accommodate both 3.3-V
(typical) and 5-V (typical) PWM drive signals.
When the PWM exits tri-state, the driver enters CCM for a period of 4 µs, regardless of the state of the SKIP#
pin. Normal operation requires this time period for the auto-zero comparator to resume.
Figure 2. PWM Tri-State Timing Diagram
7.3.4 SKIP# Pin
The SKIP# pin incorporates the input tri-state buffer as PWM. The function is somewhat different. When SKIP# is
low, the zero crossing (ZX) detection comparator is enabled, and DCM operation occurs if the load current is less
than the critical current. When SKIP# is high, the ZX comparator disables, and the converter enters FCCM mode.
When both SKIP# and PWM are tri-stated, normal operation forces the gate driver outputs low and the driver
enters a low-power state. In the low-power state, the UVLO comparator remains off to reduce quiescent current.
When SKIP# is pulled low, the driver wakes up and is able to accept PWM pulses in less than 50 µs.
Copyright © 2015–2017, Texas Instruments Incorporated
7
CSD95377Q4M
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
www.ti.com.cn
Feature Description (continued)
Table 1 shows the logic functions of UVLO, PWM, SKIP#, the control FET gate, and the sync FET gate.
Table 1. Logic Functions of the Driver IC
CONTROL FET
UVLO
PWM
SKIP#
SYNC FET GATE
MODE
GATE
Low
Low
Low
High
Low
Low
Active
Inactive
Inactive
Inactive
Inactive
Inactive
—
Low
—
Low
Low
High(1)
High
Low
Disabled
DCM(1)
FCCM
Low
High
High
Tri-state
—
H or L
H or L
Tri-state
Low
LQ(2)
ULQ(3)
Low
(1) Until zero crossing protection occurs.
(2) Low-quiescent current (LQ).
(3) Ultra-low quiescent current (ULQ).
7.3.4.1 Zero Crossing (ZX) Operation
The zero crossing comparator is adaptive for improved accuracy. As the output current decreases from a heavy
load condition, the inductor current also reduces and eventually arrives at a valley, where it touches zero current,
which is the boundary between continuous conduction and discontinuous conduction modes. The SW pin detects
the zero-current condition. When this zero inductor current condition occurs, the ZX comparator turns off the
rectifying MOSFET.
7.3.5 Integrated Boost-Switch
To maintain a BST-SW voltage close to VDD (to get lower conduction losses on the high-side FET), the
conventional diode between the VDD pin and the BST pin is replaced by a FET which is gated by the DRVL
signal.
7.4 Device Functional Modes
Table 1 shows the different functional modes of CSD95377. The diode emulation mode is enabled with SKIP#
pulled low, which improves light load efficiency. With PWM in tri-state, the power stage enters LQ mode and the
quiescent current is reduced to 130 µA. When SKIP# is held in tri-state, ULQ mode is enabled and the current is
decreased to 8 µA.
8
Copyright © 2015–2017, Texas Instruments Incorporated
CSD95377Q4M
www.ti.com.cn
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The power stage CSD95377Q4M is a highly-optimized design for synchronous buck applications using NexFET
devices with a 5-V gate drive. The control FET and sync FET silicon are parametrically tuned to yield the lowest
power loss and highest system efficiency. As a result, a rating method is used that is tailored toward a more
systems-centric environment. The high-performance gate driver IC integrated in the package helps minimize the
parasitics and results in extremely fast switching of the power MOSFETs. System-level performance curves such
as power loss, SOA, and normalized graphs allow engineers to predict the product performance in the actual
application.
8.2 Typical Application
Copyright © 2016, Texas Instruments Incorporated
Figure 3. Application Schematic
Copyright © 2015–2017, Texas Instruments Incorporated
9
CSD95377Q4M
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
www.ti.com.cn
Typical Application (continued)
8.2.1 Application Curves
TJ = 125°C, unless stated otherwise.
8
1.05
1
Typ
Max
7
6
5
4
3
2
1
0
0.95
0.9
0.85
0.8
0.75
0.7
0
5
10
15
20
25
30
35
-50
-25
0
25
50
75
100
125
150
Output Current (A)
TC - Junction Temperature (èC)
D001
D002
VIN = 12 V
VDD = 5 V
VOUT = 1.8 V
VIN = 12 V
ƒSW = 500 kHz
VDD = 5 V
VOUT = 1.8 V
ƒSW = 500 kHz
LOUT = 0.29 µH
LOUT = 0.29 µH
Figure 4. Power Loss vs Output Current
Figure 5. Power Loss vs Temperature
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
400 LFM
200 LFM
100 LFM
Nat. conv.
Min
Typ
0
0
0
10
20
30
40
50
60
70
80
90 100
0
20
40
60
80
100
120
140
Ambient Temperature (èC)
Board Temperature (èC)
D003
D004
VIN = 12 V
ƒSW = 500 kHz
VDD = 5 V
VOUT = 1.8 V
VIN = 12 V
VDD = 5 V
VOUT = 1.8 V
LOUT = 0.29 µH
ƒSW = 500 kHz
LOUT = 0.29 µH
(1)
Figure 6. Safe Operating Area – PCB Horizontal Mount (1)
Figure 7. Typical Safe Operating Area
1. The typical CSD95377Q4M system characteristic curves are based on measurements made on a PCB
design with dimensions of 4 in (W) × 3.5 in (L) × 0.062 in (T) and 6 copper layers of 1-oz copper thickness.
See System Example for detailed explanation.
10
Copyright © 2015–2017, Texas Instruments Incorporated
CSD95377Q4M
www.ti.com.cn
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
Typical Application (continued)
TJ = 125°C, unless stated otherwise.
1.35
4.8
4.1
3.4
2.8
2.1
1.4
0.7
0.0
-0.7
-1.4
1.2
1.16
1.12
1.08
1.04
1
3.2
2.5
1.9
1.3
0.6
0.0
-0.6
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.96
100
300
500
700
900 1100 1300 1500 1700
4
6
8
10
12
14
16
Switching Frequency (kHz)
Input Voltage (V)
D005
D006
VIN = 12 V
IOUT = 35 A
VDD = 5 V
VOUT = 1.8 V
IOUT = 35 A
ƒSW = 500 kHz
VDD = 5 V
VOUT = 1.8 V
LOUT = 0.29 µH
LOUT = 0.29 µH
Figure 8. Normalized Power Loss vs Frequency
Figure 9. Normalized Power Loss vs Input Voltage
1.5
1.4
1.3
1.2
1.1
1
7.0
5.6
4.2
2.8
1.4
0.0
-1.4
-2.8
-4.2
-5.6
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
2.9
2.2
1.5
0.7
0.0
-0.7
-1.5
-2.2
0.9
0.8
0.7
0.6
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Output Voltage (V)
3
3.3 3.6
0
145
290
435
580
725
870
1015 1160
Output Inductance (nH)
D007
D008
VIN = 12 V
VDD = 5 V
LOUT = 0.29 µH
IOUT = 35 A
VIN = 12 V
ƒSW = 500 kHz
VDD = 5 V
IOUT = 35 A
ƒSW = 500 kHz
VOUT = 1.8 V
Figure 10. Normalized Power Loss vs Output Voltage
Figure 11. Normalized Power Loss vs Output Inductance
35
10.2
10.1
10
30
25
20
15
10
5
9.9
9.8
9.7
9.6
9.5
9.4
9.3
0
0
400
800
1200
1600
-75
-50
-25
0
25
50
75
100 125 150
Switching Frequency (kHz)
TC - Junction Temperature (èC)
D009
D010
VIN = 12 V
LOUT = 0.29 µH
VDD = 5 V
IOUT = 35 A
VIN = 12 V
IOUT = 35 A
VDD = 5 V
VOUT = 1.8 V
VOUT = 1.8 V
LOUT = 0.29 µH
Figure 12. Driver Current vs Frequency
Figure 13. Driver Current vs Temperature
Copyright © 2015–2017, Texas Instruments Incorporated
11
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ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
www.ti.com.cn
8.3 System Example
8.3.1 Power Loss Curves
MOSFET-centric parameters such as RDS(ON) and Qgd are primarily needed by engineers to estimate the loss
generated by the devices. In an effort to simplify the design process for engineers, Texas Instruments has
provided measured power loss performance curves. Figure 4 plots the power loss of the CSD95377Q4M as a
function of load current. This curve is measured by configuring and running the CSD95377Q4M as it would be in
the final application (see Figure 14). The measured power loss is the CSD95377Q4M device power loss which
consists of both input conversion loss and gate drive loss. Equation 1 is used to generate the power loss curve.
Power loss = (VIN × IIN) + (VDD × IDD) – (VSW_AVG × IOUT
)
(1)
The power loss curve in Figure 4 is measured at the maximum recommended junction temperature of
TJ = 125°C under isothermal test conditions.
8.3.2 Safe Operating Area (SOA) Curves
The SOA curves in the CSD95377Q4M data sheet give engineers guidance on the temperature boundaries
within an operating system by incorporating the thermal resistance and system power loss. Figure 6 and Figure 7
outline the temperature and airflow conditions required for a given load current. The area under the curve
dictates the safe operating area. All the curves are based on measurements made on a PCB design with
dimensions of 4 in (W) × 3.5 in (L) × 0.062 in (T) and 6 copper layers of 1-oz copper thickness.
8.3.3 Normalized Curves
The normalized curves in the CSD95377Q4M data sheet give engineers guidance on the power loss and SOA
adjustments based on their application specific needs. These curves show how the power loss and SOA
boundaries will adjust for a given set of systems conditions. The primary Y-axis is the normalized change in
power loss and the secondary Y-axis is the change is system temperature required in order to comply with the
SOA curve. The change in power loss is a multiplier for the power loss curve and the change in temperature is
subtracted from the SOA curve.
CSD95377Q4M
Input Current (IIN
)
Boot
Gate Drive
Current (IDD
Vin
)
A
VDD
VIN
A
VDD
BST
Cin
Input Voltage
CBoot
Control
FET
(VIN
)
V
HSgate
Gate Drive
Voltage (VDD
V
DRVH
)
Boot_R
LO
VO
Vsw
VSW
SKIP#
PWM
A
LL
SKIP#
PWM
Sync
FET
Co
Output Current
LSgate
(IOUT
)
DRVL
GND
PGND
Averaging
Circuit
V
Averaged Switched
Node Voltage
(VSW_AVG
)
Copyright © 2016, Texas Instruments Incorporated
Figure 14. Power Loss Test Circuit
8.3.4 Calculating Power Loss and SOA
The user can estimate product loss and SOA boundaries by arithmetic means (see the Design Example).
Though the power loss and SOA curves in this data sheet are taken for a specific set of test conditions, the
following procedure will outline the steps engineers should take to predict product performance for any set of
system conditions.
12
Copyright © 2015–2017, Texas Instruments Incorporated
CSD95377Q4M
www.ti.com.cn
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
System Example (continued)
8.3.4.1 Design Example
Operating conditions: Output current (lOUT) = 25 A, input voltage (VIN) = 7 V, output voltage (VOUT) = 2 V,
switching frequency (ƒSW) = 800 kHz, output inductor (LOUT) = 0.2 µH
8.3.4.2 Calculating Power Loss
•
•
•
•
•
•
Typical power loss at 25 A = 3.74 W (Figure 4)
Normalized power loss for switching frequency ≈ 1.02 (Figure 8)
Normalized power loss for input voltage ≈ 0.99 (Figure 9)
Normalized power loss for output voltage ≈ 1.04 (Figure 10)
Normalized power loss for output inductor ≈ 1.01 (Figure 11)
Final calculated Power Loss = 3.741 W × 1.02 × 0.99 × 1.04 × 1.01 ≈ 3.97 W
8.3.4.3 Calculating SOA Adjustments
•
•
•
•
•
SOA adjustment for switching frequency ≈ 0.3°C (Figure 8)
SOA adjustment for input voltage ≈ –0.12°C (Figure 9)
SOA adjustment for output voltage ≈ 0.62°C (Figure 10)
SOA adjustment for output inductor ≈ 0.25°C (Figure 11)
Final calculated SOA adjustment = 0.3 + (–0.12) + 0.62 + 0.25 ≈ 1.05°C
Figure 15. Power Stage CSD95377Q4M SOA
In the previous design example, the estimated power loss of the CSD95377Q4M would increase to 3.97 W. In
addition, the maximum allowable board and/or ambient temperature would have to decrease by 1.05°C.
Figure 15 graphically shows how the SOA curve would be adjusted accordingly.
1. Start by drawing a horizontal line from the application current to the SOA curve.
2. Draw a vertical line from the SOA curve intercept down to the board/ambient temperature.
3. Adjust the SOA board/ambient temperature by subtracting the temperature adjustment value.
In the design example, the SOA temperature adjustment yields a reduction in allowable board/ambient
temperature of 1.05°C. In the event the adjustment value is a negative number, subtracting the negative number
would yield an increase in allowable board and ambient temperature.
Copyright © 2015–2017, Texas Instruments Incorporated
13
CSD95377Q4M
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
www.ti.com.cn
9 Layout
9.1 Layout Guidelines
9.1.1 Recommended PCB Design Overview
Two key system-level parameters can be addressed with a proper PCB design: electrical and thermal
performance. Properly optimizing the PCB layout yields maximum performance in both areas. A brief description
follows on how to address each parameter.
9.1.2 Electrical Performance
The CSD95377Q4M has the ability to switch at voltage rates greater than 10 kV/µs. Take special care with the
PCB layout design and placement of the input capacitors, inductor, and output capacitors.
•
The placement of the input capacitors relative to VIN and PGND pins of the CSD95377Q4M device should have
the highest priority during the component placement routine. It is critical to minimize these node lengths. As
such, ceramic input capacitors need to be placed as close as possible to the VIN and PGND pins (see
Figure 16). The example in Figure 16 uses 1 × 1-nF 0402, 25-V and 3 × 10-µF 1206, 25-V ceramic capacitors
(TDK part number C3216X5R1C106KT or equivalent). Notice there are ceramic capacitors on both sides of
the board with an appropriate amount of vias interconnecting both layers. In terms of priority of placement
next to the power stage C5, C8, C6, and C19 should follow in order.
•
•
The bootstrap capacitor CBOOT 0.1-µF 0603, 16-V ceramic capacitor should be closely connected between
BOOT and BOOT_R pins.
The switching node of the output inductor should be placed relatively close to the power stage
CSD95377Q4M VSW pins. Minimizing the VSW node length between these two components will reduce the
(1)
PCB conduction losses and actually reduce the switching noise level.
9.2 Layout Example
Figure 16. Recommended PCB Layout (Top-Down View)
9.3 Thermal Considerations
The CSD95377Q4M has the ability to use the PGND planes as the primary thermal path. As such, the use of
thermal vias is an effective way to pull away heat from the device and into the system board. Concerns of solder
voids and manufacturability problems can be addressed by the use of three basic tactics to minimize the amount
of solder attach that will wick down the via barrel:
•
•
Intentionally space out the vias from each other to avoid a cluster of holes in a given area.
Use the smallest drill size allowed in your design. The example in Figure 16 uses vias with a 10-mil drill hole
and a 16-mil capture pad.
•
Tent the opposite side of the via with solder-mask.
The number and drill size of the thermal vias should align with the end user’s PCB design rules and
manufacturing capabilities.
(1) Keong W. Kam, David Pommerenke, “EMI Analysis Methods for Synchronous Buck Converter EMI Root Cause Analysis”, University of
Missouri – Rolla
14
版权 © 2015–2017, Texas Instruments Incorporated
CSD95377Q4M
www.ti.com.cn
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
10 器件和文档支持
10.1 接收文档更新通知
要接收文档更新通知,请导航至 TI.com 上的器件产品文件夹。单击右上角的通知我 进行注册,即可每周接收产品
信息更改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
10.2 社区资源
下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范,
并且不一定反映 TI 的观点;请参阅 TI 的 《使用条款》。
TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在
e2e.ti.com 中,您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。
设计支持
TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。
10.3 商标
NexFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
10.4 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损
伤。
10.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
版权 © 2015–2017, Texas Instruments Incorporated
15
CSD95377Q4M
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
www.ti.com.cn
11 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更,恕不另行通知和修
订此文档。如欲获取此产品说明书的浏览器版本,请参阅左侧的导航。
11.1 机械制图
°
Ө
c1
a1
D2
4
1
0.300
(x45°)
8
5
毫米
英寸
标称值
DIM
最小值
0.800
0.000
0.150
2.000
0.150
0.150
3.850
4.400
3.400
2.000
标称值
0.900
0.000
0.200
2.200
0.200
0.200
3.950
4.500
3.500
2.100
最大值
1.000
0.080
0.250
2.400
0.250
0.250
4.050
4.600
3.600
2.200
最小值
0.031
0.000
0.006
0.079
0.006
0.006
0.152
0.173
0.134
0.079
最大值
0.039
0.003
0.010
0.095
0.010
0.010
0.160
0.181
0.142
0.087
A
a1
b
0.035
0.000
0.008
b1
b2
c1
D2
E
0.087
0.008
0.008
0.156
0.177
E1
E2
e
0.138
0.083
0.400 典型值
0.300 典型值
0.400
0.016 典型值
0.012 典型值
0.016
K
L
0.300
0.180
0.00
0.500
0.280
—
0.012
0.007
0.00
0.020
0.011
—
L1
θ
0.230
0.009
—
—
16
版权 © 2015–2017, Texas Instruments Incorporated
CSD95377Q4M
www.ti.com.cn
ZHCSEI7B –DECEMBER 2015–REVISED DECEMBER 2017
11.2 建议印刷电路板 (PCB) 焊盘图案
(0.006)
0.150
(0.016)
0.400
(0.010)
0.250
(x18)
(0.006)
0.150
(0.024)
0.600 (x 2)
(0.008)
0.200
(x2)
(0.087)
2.200
R0.100
R0.100
0.225 ( x 2)
(0.009)
(0.088)
2.250
(0.012)
0.300
(0.159)
4.050
11.3 建议模版开口
(0.016)
0.400
(0.029)
0.738 (x 8)
(0.008)
0.200
(0.008)
0.200
(0.015)
0.390
(0.014)
0.350
0.300
R0.100
(0.012)
0.850 (x8)
(0.033)
(0.012)
0.300
R0.100
(0.004)
0.115
0.440 (0.017)
(0.008)
0.200
(0.009)
0.225
0.200
(0.008)
(0.087)
2.200
NOTE: 尺寸单位为 mm(英寸)。
模版厚度为 100µm。
版权 © 2015–2017, Texas Instruments Incorporated
17
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
2500
250
(1)
(2)
(3)
(4/5)
(6)
CSD95377Q4M
CSD95377Q4MT
ACTIVE
VSON-CLIP
VSON-CLIP
DPC
8
8
RoHS-Exempt
& Green
NIPDAU | SN
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 150
-40 to 150
95377M
95377M
ACTIVE
DPC
RoHS-Exempt
& Green
NIPDAU | SN
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
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