CY74FCT543TSOIC [TI]

8-Bit Latched Registered Transceiver; 8位锁存寄存收发器
CY74FCT543TSOIC
型号: CY74FCT543TSOIC
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

8-Bit Latched Registered Transceiver
8位锁存寄存收发器

文件: 总9页 (文件大小:76K)
中文:  中文翻译
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Data sheet acquired from Cypress Semiconductor Corporation.  
Data sheet modified to remove devices not offered.  
CY54/74FCT543T  
SCCS030 - May 1994 - Revised March 2000  
8-Bit Latched Registered Transceiver  
Features  
Functional Description  
Function, pinout, and drive compatible with FCT and  
The FCT543T octal latched transceiver contains two sets of  
eight D-type latches with separate latch enable (LEAB, LEBA)  
and output enable (OEAB, OEBA) controls for each set to  
permit independent control of inputting and outputting in either  
direction of data flow. For data flow from A to B, for example,  
the A-to-B enable (CEAB) input must be LOW in order to enter  
data from A or to take data from B, as indicated in the truth  
table. With CEAB LOW, a LOW signal on the A-to-B latch  
enable (LEAB) input makes the A-to-B latches transparent; a  
subsequent LOW-to-HIGH transition of the LEAB signal puts  
the A latches in the storage mode and their output no longer  
change with the A inputs. With CEAB and OEAB both LOW,  
the three-stage B output buffers are active and reflect the data  
present at the output of the A latches. Control of data from B  
to A is similar, but uses CEAB, LEAB, and OEAB inputs.  
F logic  
FCT-C speed at 5.3 ns max. (Com’l)  
FCT-A speed at 6.5 ns max. (Com’l)  
Reduced VOH (typically = 3.3V) versions of equivalent  
FCT functions  
Edge-rate control circuitry for significantly improved  
noise characteristics  
Power-off disable feature  
Matched rise and fall times  
Fully compatible with TTL input and output logic levels  
ESD > 2000V  
• Sink current  
Source current  
64 mA (Com’l), 48 mA (Mil)  
32 mA (Com’l), 12 mA (Mil)  
Separation controls for data flow in each direction  
Back to back latches for storage  
The outputs are designed with a power-off disable feature to  
allow for live insertion of boards.  
Extended commercial range of 40˚C to +85˚C  
Functional Block Diagram  
Logic Block Diagram  
DetailA  
B
D Q  
LE  
0
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
CEAB  
OEAB  
A
0
Q D  
LE  
CEBA  
LEAB  
LEBA  
OEBA  
A
B
B
B
B
B
B
B
1
1
2
3
4
5
6
7
B
B
B
B
B
B
B
B
7
0
1
2
3
4
5
6
A
2
A
3
A
4
DetailA x 7  
A
5
A
6
Pin Configurations  
A
7
SOIC/QSOP  
Top View  
OEBA  
OEAB  
1
LEBA  
OEBA  
24  
23  
22  
21  
CEBA  
LEBA  
V
CC  
2
CEBA  
CEAB  
LEAB  
3
A
0
B
0
4
A
1
B
1
A
2
5
B
2
20  
19  
18  
17  
16  
A
3
6
B
3
A
4
B
4
7
A
5
B
5
8
A
6
B
6
9
A
7
B
7
10  
11  
12  
15  
14  
13  
CEAB  
GND  
LEAB  
OEAB  
Copyright © 2000, Texas Instruments Incorporated  
CY54/74FCT543T  
Maximum Ratings[4, 5]  
Pin Description  
(Above which the useful life may be impaired. For user guide-  
lines, not tested.)  
Name  
Description  
OEAB  
OEBA  
CEAB  
CEBA  
LEAB  
LEBA  
A
A-to-B Output Enable Input (Active LOW)  
B-to-A Output Enable Input (Active LOW)  
A-to-B Enable Input (Active LOW)  
Storage Temperature ................................. –65°C to +150°C  
Ambient Temperature with  
Power Applied............................................. –65°C to +135°C  
B-to-A Enable Input (Active LOW)  
Supply Voltage to Ground Potential............... –0.5V to +7.0V  
DC Input Voltage ........................................... –0.5V to +7.0V  
DC Output Voltage......................................... –0.5V to +7.0V  
DC Output Current (Maximum Sink Current/Pin) ......120 mA  
Power Dissipation..........................................................0.5W  
A-to-B Latch Enable Input (Active LOW)  
B-to-A Latch Enable Input (Active LOW)  
A-to-B Data Inputs or B-to-A Three-State Outputs  
B-to-A Data Inputs or A-to-B Three-State Outputs  
B
Static Discharge Voltage............................................>2001V  
(per MIL-STD-883, Method 3015)  
Function Table[1, 2]  
Inputs  
Latch  
OEAB A-to-B[3]  
Outputs  
B
Operating Range  
CEAB  
LEAB  
Ambient  
H
X
X
L
X
H
X
L
X
X
H
L
Storing  
Storing  
X
High Z  
X
Range  
Range  
Temperature  
VCC  
Commercial DT  
0°C to +70°C  
5V ± 5%  
5V ± 5%  
5V ± 10%  
High Z  
Commercial T, AT, CT  
Military[6]  
–40°C to +85°C  
–55°C to +125°C  
Transpar- Current A Inputs  
ent  
All  
L
H
L
Storing  
Previous A Inputs  
Notes:  
1. H = HIGH Voltage Level. L = LOW Voltage Level. X = Don’t Care.  
2. A-to-B data flow shown: B-to-A flow control is the same, except using CEBA, LEBA, and OEBA.  
3. Before LEAB LOW-to-HIGH Transition.  
4. Unless otherwise noted, these limits are over the operating free-air temperature range.  
5. Unused inputs must always be connected to an appropriate logic voltage level, preferably either VCC or ground.  
6. TA is the “instant on” case temperature.  
2
CY54/74FCT543T  
Electrical Characteristics Over the Operating Range  
Parameter  
Description  
Test Conditions  
VCC=Min., IOH=–32 mA  
Min.  
2.0  
Typ.[7]  
Max.  
Unit  
V
VOH  
Output HIGH Voltage  
Com’l  
Com’l  
Mil  
VCC=Min., IOH=–15 mA  
VCC=Min., IOH=–12 mA  
VCC=Min., IOL=64 mA  
VCC=Min., IOL=48mA  
2.4  
3.3  
3.3  
0.3  
0.3  
V
2.4  
V
VOL  
Output LOW Voltage  
Com’l  
Mil  
0.55  
0.55  
V
V
VIH  
VIL  
VH  
VIK  
IIH  
Input HIGH Voltage  
Input LOW Voltage  
Hysteresis[8]  
2.0  
V
0.8  
V
All inputs  
0.2  
V
Input Clamp Diode Voltage  
Input HIGH Current  
Input HIGH Current[8]  
Input LOW Current[8]  
VCC=Min., IIN=–18 mA  
VCC=Max., VIN=VCC  
VCC=Max., VIN=2.7V  
VCC=Max., VIN=0.5V  
VCC=Max., VOUT = 2.7V  
–0.7  
–1.2  
5
V
µA  
µA  
µA  
µA  
IIH  
±1  
±1  
10  
IIL  
IOZH  
Off State HIGH-Level Output  
Current  
IOZL  
Off State LOW-Level  
Output Current  
VCC= Max., VOUT = 0.5V  
–10  
µA  
IOS  
Output Short Circuit Current[9] VCC=Max., VOUT=0.0V  
–60  
–120  
–225  
mA  
IOFF  
Power-Off Disable  
VCC=0V, VOUT=4.5V  
±1  
µA  
Capacitance[8]  
Parameter  
Description  
Typ.[7]  
Max.  
10  
Unit  
CIN  
Input Capacitance  
Output Capacitance  
5
9
pF  
pF  
COUT  
12  
Notes:  
7. Typical values are at VCC=5.0V, TA=+25˚C ambient.  
8. This parameter is specified but not tested.  
9. Not more than one output should be shorted at a time. Duration of short should not exceed one second. The use of high-speed test apparatus and/or sample  
and hold techniques are preferable in order to minimize internal chip heating and more accurately reflect operational values. Otherwise prolonged shorting of  
a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parametric tests. In any sequence of parameter  
tests, IOS tests should be performed last.  
3
CY54/74FCT543T  
Power Supply Characteristics  
Parameter  
ICC  
Description  
Test Conditions  
Typ.[7]  
0.1  
Max.  
0.2  
Unit  
mA  
mA  
Quiescent Power Supply Current VCC=Max., VIN0.2V, VINVCC–0.2V  
Quiescent Power Supply Current VCC=Max., VIN=3.4V,[10]  
ICC  
0.5  
2.0  
(TTL inputs)  
f1=0, Outputs Open  
ICCD  
Dynamic Power Supply Current[11] VCC=Max., One Input Toggling,  
0.06  
0.7  
0.12  
1.4  
mA/MHz  
50% Duty Cycle, Outputs Open,  
CEAB and OEAB=LOW, CEBA=HIGH,  
VIN0.2V or VINVCC–0.2V  
IC  
Total Power Supply Current[12]  
VCC=Max., f0=10 MHz,  
mA  
50% Duty Cycle, Outputs Open,  
One Bit Toggling at f1=5 MHz,  
CEAB and OEAB=LOW,CEBA=HIGH,  
f0=LEAB = 10 MHz,  
VIN0.2V or VINVCC–0.2V  
VCC=Max., f0=10 MHz,  
50% Duty Cycle, Outputs Open,  
One Bit Toggling at f1=5 MHz,  
CEAB and OEAB=LOW, CEBA=HIGH,  
f0=LEAB = 10 MHz, VIN=3.4V or VIN=GND  
1.2  
2.8  
3.4  
mA  
mA  
VCC=Max., f0=10 MHz,  
5.6[13]  
50% Duty Cycle, Outputs Open,  
Eight Bits Toggling at f1=5 MHz,  
CEAB and OEAB=LOW, CEBA=HIGH,  
f0=LEAB = 10 MHz,  
VIN0.2V or VINVCC–0.2V  
VCC=Max., f0=10 MHz,  
5.1  
14.6[13]  
mA  
50% Duty Cycle, Outputs Open,  
Eight Bits Toggling at f1=5 MHz,  
CEAB and OEAB=LOW, CEBA=HIGH,  
f0=LEAB = 10 MHz, VIN=3.4V or VIN=GND  
Notes:  
10. Per TTL driven input (VIN=3.4V); all other inputs at VCC or GND.  
11. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.  
12. IC  
IC  
=
=
=
=
=
=
=
=
=
=
IQUIESCENT + IINPUTS + IDYNAMIC  
ICC+ICCDHNT+ICCD(f0/2 + f1N1)  
Quiescent Current with CMOS input levels  
Power Supply Current for a TTL HIGH input (VIN=3.4V)  
Duty Cycle for TTL inputs HIGH  
ICC  
ICC  
DH  
NT  
ICCD  
f0  
Number of TTL inputs at DH  
Dynamic Current caused by an input transition pair (HLH or LHL)  
Clock frequency for registered devices, otherwise zero  
Input signal frequency  
f1  
N1  
Number of inputs changing at f1  
All currents are in milliamps and all frequencies are in megahertz.  
13. Values for these conditions are examples of the ICC formula. These limits are specified but not tested.  
4
CY54/74FCT543T  
Switching Characteristics Over the Operating Range[14]  
FCT543T  
Commercial  
Min.[14] Max. Min.[14] Max. Min.[14]  
FCT543AT  
Military  
Commercial  
Parameter  
Description  
Propagation Delay  
Transparent Mode A to B or B to A  
Max.  
Unit Fig. No.[15]  
tPLH  
tPHL  
2.0  
2.5  
2.0  
10.0  
14.0  
14.0  
2.5  
2.5  
2.0  
8.5  
2.5  
2.5  
2.0  
6.5  
ns  
ns  
ns  
1, 3  
tPLH  
tPHL  
Propagation Delay  
LEBA to A, LEAB to B  
12.5  
12.0  
8.0  
9.0  
1, 5  
tPZH  
tPZL  
Output Enable Time  
OEBA or OEAB to A or B  
CEBA or CEAB to A or B  
1, 7, 8  
tPZH  
tPZL  
Output Disable Time  
OEBA or OEAB to A or B  
CEBA or CEAB to A or B  
2.0  
13.0  
2.0  
9.0  
2.0  
7.5  
ns  
1, 7, 8  
tS  
Set-Up Time HIGH or LOW,  
A or B to LEBA or LEAB  
3.0  
2.0  
5.0  
2.0  
2.0  
5.0  
2.0  
2.0  
5.0  
ns  
ns  
ns  
9
9
5
tH  
tW  
Hold Time HIGH or LOW,  
A or B to LEBA or LEAB  
Pulse Width LOW[8]  
LEBA or LEAB  
FCT543CT  
Commercial  
Parameter  
Description  
Min.[14]  
Max.  
5.3  
Unit  
Fig. No.[15]  
tPLH  
tPHL  
Propagation Delay  
2.5  
2.5  
2.0  
ns  
ns  
ns  
1, 3  
Transparent Mode A to B or B to A  
tPLH  
tPHL  
Propagation Delay  
LEBA to A, LEAB to B  
7.0  
8.0  
1, 5  
tPZH  
tPZL  
Output Enable Time  
OEBA or OEAB to A or B  
CEBA or CEAB to A or B  
1, 7, 8  
tPZH  
tPZL  
Output Disable Time  
OEBA or OEAB to A or B  
CEBA or CEAB to A or B  
2.0  
6.5  
ns  
1, 7, 8  
tS  
tH  
Set-Up Time, HIGH or LOW,  
A or B to LEBA or LEAB  
2.0  
2.0  
5.0  
ns  
ns  
ns  
9
9
5
Hold Time, HIGH or LOW,  
A or B to LEBA or LEAB  
Pulse Width LOW LEBA or LEAB[8]  
tW  
Notes:  
14. Minimum limits are specified but not tested on Propagation Delays.  
15. See “Parameter Measurement Information” in the General Information Section.  
5
CY54/74FCT543T  
Ordering Information  
Speed  
Package  
Name  
Operating  
Range  
(ns)  
Ordering Code  
Package Type  
24-Lead (150-Mil) QSOP  
5.3  
CY74FCT543CTQCT  
Q13  
S13  
Q13  
S13  
Q13  
S13  
D14  
Commercial  
Commercial  
Commercial  
Military  
CY74FCT543CTSOC/SOCT  
CY74FCT543ATQCT  
24-Lead (300-Mil) Molded SOIC  
24-Lead (150-Mil) QSOP  
6.5  
8.5  
CY74FCT543ATSOC/SOCT  
CY74FCT543TQCT  
24-Lead (300-Mil) Molded SOIC  
24-Lead (150-Mil) QSOP  
CY74FCT543TSOC/SOCT  
CY54FCT543TDMB  
24-Lead (300-Mil) Molded SOIC  
24-Lead (300-Mil) CerDIP  
10.0  
Document #: 38-00264-B  
6
CY54/74FCT543T  
Package Diagrams  
24-Lead (300-Mil) CerDIP D14  
MIL-STD-1835 D-9 Config.A  
24-Lead Quarter Size Outline Q13  
7
CY54/74FCT543T  
Package Diagrams (continued)  
24-Lead (300-Mil) Molded SOIC S13  
8
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO  
BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
semiconductor products or services might be or are used. TI’s publication of information regarding any third  
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.  
Copyright 2000, Texas Instruments Incorporated  

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