DLP7000UV [TI]

DLP® 0.7XGA 2xLVDS UV A 型 DMD;
DLP7000UV
型号: DLP7000UV
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

DLP® 0.7XGA 2xLVDS UV A 型 DMD

文件: 总53页 (文件大小:2002K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
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DLP7000UV  
ZHCSE66D MAY 2015REVISED MAY 2017  
DLP7000UV DLP®0.7 UV XGA 2x LVDS A DMD  
1 特性  
3 说明  
1
0.7 英寸对角线微镜阵列  
DLP7000UV 是一种数控 MEMS(微机电系统)空间  
光调制器 (SLM)。当与适当的光学系统配合使用  
时,DLP7000UV 可用于调制入射光的振幅、方向和/  
或相位。  
1024 × 768 铝微米尺寸微镜阵列  
13.68µm 微镜间距  
±12°微镜倾斜角(相对于平板状态)  
设计用于边缘照明  
DLP7000UV 数字微镜器件 (DMD) 作为 DLP®  
设计用于紫外光(363nm 420nm):  
Discovery™ 4100 平台的新成员,可确保非常快速的  
图形速率,同时还可在深入 UVA 光谱(363nm 至  
420nm)的可见光谱之外实现高性能的空间光调制。  
DLP7000UV DMD 设计采用了针对 UV 透射进行优化  
的特殊窗口。DLP Discovery 4100 平台还提供具有随  
机行寻址选项的最高级独立微镜控制。除了采用密封封  
装外,DLP7000UV 具有独特的功能和价值,非常适合  
支持各种工业、医疗和高级显示 应用。  
窗透射率 98%(单通,通过两个窗面)  
微镜反射率 88%  
阵列衍射效率 85%  
阵列填充因子 92%(标称值)  
两条 16 位低压差分信令 (LVDS) 双倍数据速率  
(DDR) 输入数据总线  
高达 400MHz 的输入数据时钟速率  
40.64mm x 31.75mm x 6.0mm 封装尺寸  
气密封装  
采用密封封装的 DLP7000UV DMD 与一个专用的  
DLPC410 控制器(用于支持大于 32000Hz1 位二进  
制)和大于 1900Hz8 位灰度)的高速图形速率)、  
一个 DLPR410DLP Discovery 4100 配置 PROM)  
和一个 DLPA200DMD 微镜驱动器)配套出售。  
2 应用  
工业  
直接成像平版印刷术  
激光打标和修复系统  
计算机直接制版打印机  
快速成型机  
器件信息 (1)  
部件号  
封装  
封装尺寸(标称值)  
DLP7000UV  
LCCC (203)  
40.64mm × 31.75mm  
3D 打印机  
(1) 如需了解所有可用封装,请参阅产品说明书末尾的可订购产品  
附录。  
医疗  
眼科  
简化电路原理图  
光化疗法  
高光谱成像  
Illumination  
Driver  
DLPC410  
DLP7000UV  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
English Data Sheet: DLPS061  
 
 
 
 
DLP7000UV  
ZHCSE66D MAY 2015REVISED MAY 2017  
www.ti.com.cn  
目录  
8.2 Functional Block Diagram ....................................... 23  
8.3 Feature Description................................................. 23  
8.4 Device Functional Modes........................................ 31  
8.5 Window Characteristics and Optics ....................... 33  
8.6 Micromirror Array Temperature Calculation............ 34  
8.7 Micromirror Landed-On/Landed-Off Duty Cycle ..... 36  
Application and Implementation ........................ 38  
9.1 Application Information............................................ 38  
9.2 Typical Application .................................................. 39  
1
2
3
4
5
6
7
特性.......................................................................... 1  
应用.......................................................................... 1  
说明.......................................................................... 1  
修订历史记录 ........................................................... 2  
说明 (续.............................................................. 4  
Pin Configuration and Functions......................... 4  
Specifications....................................................... 11  
7.1 Absolute Maximum Ratings .................................... 11  
7.2 Storage Conditions.................................................. 11  
7.3 ESD Ratings............................................................ 11  
7.4 Recommended Operating Conditions..................... 12  
7.5 Thermal Information................................................ 13  
7.6 Electrical Characteristics......................................... 14  
7.7 LVDS Timing Requirements ................................... 15  
7.8 LVDS Waveform Requirements.............................. 16  
7.9 Serial Control Bus Timing Requirements................ 17  
7.10 Systems Mounting Interface Loads....................... 18  
7.11 Micromirror Array Physical Characteristics........... 19  
7.12 Micromirror Array Optical Characteristics ............. 20  
7.13 Window Characteristics......................................... 21  
7.14 Chipset Component Usage Specification ............. 21  
Detailed Description ............................................ 22  
8.1 Overview ................................................................. 22  
9
10 Power Supply Recommendations ..................... 42  
10.1 Power-Up Sequence (Handled by the DLPC410)  
................................................................................. 42  
11 Layout................................................................... 42  
11.1 Layout Guidelines ................................................. 42  
11.2 Layout Example .................................................... 44  
12 器件和文档支持 ..................................................... 45  
12.1 器件支持................................................................ 45  
12.2 文档支持................................................................ 45  
12.3 相关链接................................................................ 46  
12.4 社区资源................................................................ 47  
12.5 ....................................................................... 47  
12.6 静电放电警告......................................................... 47  
12.7 Glossary................................................................ 47  
13 机械、封装和可订购信息....................................... 47  
8
4 修订历史记录  
注:之前版本的页码可能与当前版本有所不同。  
Changes from Revision C (September 2015) to Revision D  
Page  
Updated Pin Configuration and Functions diagram ............................................................................................................... 4  
Changed TGRADIENT from 5 °C to 10 °C to accommodate increase in power density from 400 to 420 nm and added  
RH symbol for relative humidity in Absolute Maximum Ratings........................................................................................... 11  
Clarified TGRADIENT footnote in Absolute Maximum Ratings.................................................................................................. 11  
Changed Tstg to TDMD in Storage Conditions ........................................................................................................................ 11  
Changed 363 to 420 nm to 363 to 400 nm max for 2.5 W/cm2 power density and 3.7 W max optical power in  
Recommended Operating Conditions ................................................................................................................................. 12  
Added 400 to 420 nm max power density of 11 W/cm2 and max optical power of 16.2 W in Recommended  
Operating Conditions ........................................................................................................................................................... 12  
Added 363 to 420 nm total integrated max power density of 11 W/cm2 and total integrated max optical power of  
16.2 W in Recommended Operating Conditions ................................................................................................................. 12  
Changed TGRADIENT from 5 °C to 10 °C to accommodate increase in power density from 400 to 420 nm  
Recommended Operating Conditions ................................................................................................................................. 12  
Changed Micromirror active border value from 10 to correct value of 6 in Micromirror Array Physical Characteristics...... 19  
Changed micromirror crossover to mean transition time and renamed previous crossover to micromirror switching  
time typical micromirror crossover time typo (16 µs to 13 µs) in Micromirror Array Optical Characteristics........................ 20  
Added typical micromirror switching time - 13 µs in Micromirror Array Optical Characteristics........................................... 20  
Changed "Micromirror switching time" to "Array switching time" for clarity in Micromirror Array Optical Characteristics.... 20  
Added clarification to Micromirror switching time at 400 MHz with global reset in Micromirror Array Optical  
Characteristics...................................................................................................................................................................... 20  
Changed Figure 17 drawing to current thermal test point numbering convention ............................................................... 34  
已添加 相关链接.............................................................................................................................................................. 46  
2
版权 © 2015–2017, Texas Instruments Incorporated  
 
DLP7000UV  
www.ti.com.cn  
ZHCSE66D MAY 2015REVISED MAY 2017  
修订历史记录 (接下页)  
Changes from Revision B (July 2015) to Revision C  
Page  
将器件状态从产品预览更改为生产数据.............................................................................................................................. 1  
Added 3.7-W maximum value to illumination power (from 363 nm to 420 nm) in Recommended Operating  
Conditions ............................................................................................................................................................................ 12  
Updated Figure 18 ............................................................................................................................................................... 38  
Changes from Revision A (June 2015) to Revision B  
Page  
发布完整版产品说明书............................................................................................................................................................ 1  
说明 中将 UVA 光谱的最小值从 365nm 更正为 363nm...................................................................................................... 1  
Changes from Original (May 2015) to Revision A  
Page  
更正了器件的部件号 ............................................................................................................................................................... 1  
版权 © 2015–2017, Texas Instruments Incorporated  
3
DLP7000UV  
ZHCSE66D MAY 2015REVISED MAY 2017  
www.ti.com.cn  
5 说明 (续)  
DLP7000UV 需要与芯片组的其他组件结合使用才能实现可靠功能和运行。一套专用的芯片组能够使开发人员更加  
轻松地访问 DMD 并使用高速而独立的微镜控制。  
电子方面,DLP7000UV 1 CMOS 存储器单元的两维阵列组成,其组织结构为 1024 存储器单元列乘以 768  
存储器单元行的栅格。CMOS 存储器阵列通过两条 16 位低压差分信令 (LVDS) 双倍数据速率 (DDR) 总线逐行进行  
寻址。寻址由一个串行控制总线处理。特定的 CMOS 存储器访问协议由 DLPC410 数字控制器处理。  
6 Pin Configuration and Functions  
FLP Package  
203-Pin LCCC  
Bottom View  
A
B
C
D
E
F
074  
G
H
J
K
L
M
N
P
R
T
U
V
W
Y
AA  
AB  
AC  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
6
4
2
29  
27  
25  
23  
21  
19  
17  
15  
13  
11  
9
7
5
3
1
4
Copyright © 2015–2017, Texas Instruments Incorporated  
DLP7000UV  
www.ti.com.cn  
ZHCSE66D MAY 2015REVISED MAY 2017  
Pin Functions  
(1)  
PIN  
NAME  
TYPE  
(I/O/P)  
DATA  
INTERNAL  
SIGNAL  
CLOCK  
DESCRIPTION  
TRACE (MILS)  
(2)  
(3)  
RATE  
TERM  
NO.  
DATA INPUT  
Differential  
Terminated -  
100 Ω  
D_AN(0)  
D_AN(1)  
D_AN(2)  
D_AN(3)  
D_AN(4)  
D_AN(5)  
D_AN(6)  
D_AN(7)  
D_AN(8)  
D_AN(9)  
D_AN(10)  
D_AN(11)  
D_AN(12)  
D_AN(13)  
D_AN(14)  
D_AN(15)  
D_AP(0)  
D_AP(1)  
B10  
A13  
D16  
C17  
B18  
A17  
A25  
D22  
C29  
D28  
E27  
F26  
G29  
H28  
J27  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
368.72  
424.61  
433.87  
391.39  
438.57  
391.13  
563.26  
411.62  
595.11  
543.07  
455.98  
359.5  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Input data bus A  
(2x LVDS)  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
542.67  
551.51  
528.04  
484.38  
366.99  
417.47  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
K26  
B12  
A11  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
(1) The following power supplies are required to operate the DMD: VCC, VCC1, VCC2. VSS must also be connected.  
(2) DDR = Double Data Rate. SDR = Single Data Rate. Refer to the LVDS Timing Requirements for specifications and relationships.  
(3) Refer to Electrical Characteristics for differential termination specification.  
Copyright © 2015–2017, Texas Instruments Incorporated  
5
DLP7000UV  
ZHCSE66D MAY 2015REVISED MAY 2017  
www.ti.com.cn  
Pin Functions (continued)  
(1)  
PIN  
TYPE  
(I/O/P)  
DATA  
RATE  
INTERNAL  
TERM  
SIGNAL  
CLOCK  
DESCRIPTION  
TRACE (MILS)  
(2)  
(3)  
NAME  
NO.  
Differential  
Terminated -  
100 Ω  
D_AP(2)  
D14  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
LVCMOS  
DDR  
DCLK_A  
434.89  
Differential  
Terminated -  
100 Ω  
D_AP(3)  
D_AP(4)  
D_AP(5)  
D_AP(6)  
D_AP(7)  
D_AP(8)  
D_AP(9)  
D_AP(10)  
D_AP(11)  
D_AP(12)  
D_AP(13)  
D_AP(14)  
D_AP(15)  
D_BN(0)  
D_BN(1)  
D_BN(2)  
D_BN(3)  
D_BN(4)  
C15  
B16  
A19  
A23  
D20  
A29  
B28  
C27  
D26  
F30  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_A  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
394.67  
437.3  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
389.01  
562.92  
410.34  
594.61  
539.88  
456.78  
360.68  
543.97  
570.85  
527.18  
481.02  
368.72  
424.61  
433.87  
391.39  
438.57  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Input data bus A  
(2x LVDS)  
Differential  
Terminated -  
100 Ω  
H30  
J29  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
K28  
AB10  
AC13  
Y16  
AA17  
AB18  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
6
Copyright © 2015–2017, Texas Instruments Incorporated  
DLP7000UV  
www.ti.com.cn  
ZHCSE66D MAY 2015REVISED MAY 2017  
Pin Functions (continued)  
(1)  
PIN  
TYPE  
(I/O/P)  
DATA  
RATE  
INTERNAL  
TERM  
SIGNAL  
CLOCK  
DESCRIPTION  
TRACE (MILS)  
(2)  
(3)  
NAME  
NO.  
Differential  
Terminated -  
100 Ω  
D_BN(5)  
D_BN(6)  
D_BN(7)  
D_BN(8)  
D_BN(9)  
D_BN(10)  
D_BN(11)  
D_BN(12)  
D_BN(13)  
D_BN(14)  
D_BN(15)  
D_BP(0)  
D_BP(1)  
D_BP(2)  
D_BP(3)  
D_BP(4)  
D_BP(5)  
AC17  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
LVCMOS  
DDR  
DCLK_B  
391.13  
Differential  
Terminated -  
100 Ω  
AC25  
Y22  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
563.26  
411.62  
595.11  
543.07  
455.98  
360.94  
575.85  
519.37  
532.59  
441.14  
366.99  
417.47  
434.89  
394.67  
437.3  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
AA29  
Y28  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
W27  
V26  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
T30  
Differential  
Terminated -  
100 Ω  
R29  
Differential  
Terminated -  
100 Ω  
R27  
Differential  
Terminated -  
100 Ω  
N27  
Differential  
Terminated -  
100 Ω  
AB12  
AC11  
Y14  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
AA15  
AB16  
AC19  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
389.01  
Input data bus B  
(2x LVDS) Input  
data bus B (2x  
LVDS)  
Differential  
Terminated -  
100 Ω  
D_BP(6)  
D_BP(7)  
AC23  
Y20  
Input  
Input  
LVCMOS  
LVCMOS  
DDR  
DDR  
DCLK_B  
DCLK_B  
562.92  
410.34  
Differential  
Terminated -  
100 Ω  
Copyright © 2015–2017, Texas Instruments Incorporated  
7
DLP7000UV  
ZHCSE66D MAY 2015REVISED MAY 2017  
www.ti.com.cn  
Pin Functions (continued)  
(1)  
PIN  
TYPE  
(I/O/P)  
DATA  
RATE  
INTERNAL  
TERM  
SIGNAL  
CLOCK  
DESCRIPTION  
TRACE (MILS)  
(2)  
(3)  
NAME  
NO.  
Differential  
Terminated -  
100 Ω  
D_BP(8)  
AC29  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
LVCMOS  
DDR  
DCLK_B  
594.61  
Differential  
Terminated -  
100 Ω  
D_BP(9)  
AB28  
AA27  
Y26  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DDR  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
DCLK_B  
539.88  
456.78  
360.68  
578.46  
509.74  
534.59  
440  
Differential  
Terminated -  
100 Ω  
D_BP(10)  
D_BP(11)  
D_BP(12)  
D_BP(13)  
D_BP(14)  
D_BP(15)  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
U29  
T28  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Input data bus B  
(2x LVDS)  
P28  
Differential  
Terminated -  
100 Ω  
P26  
DATA CLOCK  
Differential  
Terminated -  
100 Ω  
DCLK_AN  
B22  
B24  
Input  
Input  
Input  
Input  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
477.10  
477.11  
477.10  
477.11  
Differential  
Terminated -  
100 Ω  
DCLK_AP  
DCLK_BN  
DCLK_BP  
Differential  
Terminated -  
100 Ω  
AB22  
AB24  
Differential  
Terminated -  
100 Ω  
DATA CONTROL INPUTS  
Differential  
Terminated -  
100 Ω  
Serial control for  
data bus A (2x  
LVDS)  
SCTRL_AN  
SCTRL_AP  
SCTRL_BN  
SCTRL_BP  
C21  
C23  
Input  
Input  
Input  
Input  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
DDR  
DDR  
DDR  
DDR  
DCLK_A  
DCLK_A  
DCLK_B  
DCLK_B  
477.07  
477.14  
477.07  
477.14  
Differential  
Terminated -  
100 Ω  
Differential  
Terminated -  
100 Ω  
Serial control for  
data bus B (2x  
LVDS)  
AA21  
AA23  
Differential  
Terminated -  
100 Ω  
SERIAL COMMUNICATION AND CONFIGURATION  
SCPCLK  
SCPDO  
SCPDI  
E3  
B2  
F4  
D4  
C3  
Input  
Output  
Input  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
Pull-down  
Serial port clock  
Serial port output  
Serial port input  
Serial port enable  
Device Reset  
379.29  
480.91  
323.56  
326.99  
406.28  
SCPCLK  
SCPCLK  
SCPCLK  
Pull-down  
Pull-down  
Pull-down  
SCPENZ  
PWRDNZ  
Input  
Input  
8
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ZHCSE66D MAY 2015REVISED MAY 2017  
Pin Functions (continued)  
(1)  
PIN  
TYPE  
(I/O/P)  
DATA  
RATE  
INTERNAL  
TERM  
SIGNAL  
CLOCK  
DESCRIPTION  
TRACE (MILS)  
(2)  
(3)  
NAME  
NO.  
D8  
Data bandwidth  
mode select  
MODE_A  
MODE_B  
Input  
Input  
LVCMOS  
LVCMOS  
Pull-down  
Pull-down  
396.05  
208.86  
C11  
MICROMIRROR BIAS CLOCKING PULSE  
MBRST(0)  
MBRST(1)  
MBRST(2)  
MBRST(3)  
MBRST(4)  
MBRST(5)  
MBRST(6)  
P2  
AB4  
AA7  
N3  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Analog  
Analog  
Analog  
Analog  
Analog  
Analog  
Analog  
M4  
AB6  
AA5  
Micromirror Bias  
Clocking Pulse  
MBRST signals  
clock micromirrors  
into state of  
MBRST(7)  
L3  
Input  
Analog  
LVCMOS memory  
cell associated  
with each mirror.  
MBRST(8)  
MBRST(9)  
MBRST(10)  
MBRST(11)  
MBRST(12)  
MBRST(13)  
MBRST(14)  
MBRST(15)  
POWER  
Y6  
K4  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Analog  
Analog  
Analog  
Analog  
Analog  
Analog  
Analog  
Analog  
L5  
AC5  
Y8  
J5  
K6  
AC7  
A7, A15,  
C1, E1, U1,  
W1,  
AB2,AC9,  
AC15  
Power for  
LVCMOS Logic  
VCC  
Power  
Analog  
A21, A27,  
D30, M30,  
Y30, AC21,  
AC27  
Power supply for  
LVDS Interface  
VCC1  
VCC2  
Power  
Power  
Analog  
Analog  
Power for High  
Voltage CMOS  
Logic  
G1, J1, L1,  
N1, R1  
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TRACE (MILS)  
Pin Functions (continued)  
(1)  
PIN  
TYPE  
DATA  
INTERNAL  
SIGNAL  
CLOCK  
DESCRIPTION  
(2)  
(3)  
(I/O/P)  
RATE  
TERM  
NAME  
NO.  
A1, A3, A5,  
A9, B4, B8,  
B14, B20,  
B26, B30,  
C7,  
C13, C19,  
C25, D6,  
D12, D18,  
D24, E29,  
F2, F28,  
G3, G27,  
H2, H4,  
H26, J3,  
J25 ,K2,  
K30, L25,  
L27, L29,  
M2, M6,  
M26, M28,  
N5, N25,  
N29, P4,  
Common return  
for all power  
inputs  
VSS  
Power  
Analog  
P30, R3,  
R5, R25,  
T2, T26,  
U27, V28,  
V30, W5,  
W29, Y4,  
Y12, Y18,  
Y24,  
AA3,AA9,  
AA13,  
AA19,  
AA25, AB8,  
AB14,  
AB20,  
AB26, AB30  
RESERVED SIGNALS (NOT FOR USE IN SYSTEM)  
RESERVED  
_AA1  
Pins should be  
connected to VSS  
AA1  
B6  
Input  
Input  
Input  
Input  
LVCMOS  
LVCMOS  
LVCMOS  
LVCMOS  
Pull-down  
Pull-down  
Pull-down  
Pull-down  
RESERVED  
_B6  
RESERVED  
_T4  
T4  
RESERVED  
_U5  
U5  
AA11, AC3,  
C5, C9,  
D10, D2,  
E5,G5, H6,  
P6, T6,  
NO_CONN  
ECT  
DO NOT  
CONNECT  
U3, V2, V4,  
W3, Y10,  
Y2  
10  
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ZHCSE66D MAY 2015REVISED MAY 2017  
7 Specifications  
7.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)  
(1)  
MIN  
MAX  
UNIT  
ELECTRICAL  
(2) (3)  
VCC  
Voltage applied to VCC  
Voltage applied to VCCI  
–0.5  
–0.5  
–0.5  
4
4
8
V
V
V
(2) (3)  
VCCI  
VCC2  
(2) (3) (4)  
Voltage applied to VVCC2  
Micromirror clocking pulse waveform voltage applied to MBRST[15:0]  
Input Pins (supplied by DLPA200)  
VMBRST  
–28  
28  
V
(4)  
|VCC – VCCI  
|
Supply voltage delta (absolute value)  
0.3  
V
V
(2)  
Voltage applied to all other input pins  
–0.5  
VCC + 0.3  
Maximum differential voltage, damage can occur to internal termination  
resistor if exceeded, see Figure 2  
|VID  
|
700  
mV  
IOH  
IOL  
Current required from a high-level output  
Current required from a low-level output  
VOH = 2.4 V  
VOL = 0.4 V  
–20  
15  
mA  
mA  
ENVIRONMENTAL  
(5)  
Case temperature – operational  
20  
30  
80  
10  
95  
°C  
°C  
TC  
(5)  
Case temperature – non-operational  
–40  
(6)  
TGRADIENT  
RH  
Device temperature gradient – operational  
Relative humidity (non-condensing)  
°C  
%RH  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) All voltages referenced to VSS (ground).  
(3) Voltages VCC, VCCI, and VCC2 are required for proper DMD operation.  
(4) Exceeding the recommended allowable absolute voltage difference between VCC and VCCI may result in excess current draw. The  
difference between VCC and VCCI, |VCC – VCCI|, should be less than the specified limit.  
(5) DMD Temperature is the worst-case of any test point shown in Case Temperature, or the active array as calculated by the Micromirror  
Array Temperature Calculation.  
(6) As either measured, predicted, or both between any two points -- measured on the exterior of the package, or as predicted at any point  
inside the micromirror array cavity. Refer to Case Temperature and Micromirror Array Temperature Calculation.  
7.2 Storage Conditions  
are applicable before the DMD is installed in the final product.  
MIN  
MAX  
80  
UNIT  
°C  
TDMD  
RH  
Storage temperature  
–40  
Relative humidity (non-condensing)  
95  
%RH  
7.3 ESD Ratings  
VALUE  
±2000  
<250  
UNIT  
All pins except MBRST[0:15]  
MBRST[0:15] pins  
Electrostatic  
V(ESD)  
Human-body model (HBM), per  
ANSI/ESDA/JEDEC JS-001  
V
(1)  
discharge  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with  
less than 500-V HBM is possible if necessary precautions are taken.  
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7.4 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
(1)  
MIN NOM  
MAX  
UNIT  
ELECTRICAL  
(2) (3)  
VCC  
Supply voltage for LVCMOS core logic  
3.0  
3.0  
3.3  
3.3  
7.5  
3.6  
3.6  
V
V
V
V
V
(2) (3)  
VCCI  
Supply voltage for LVDS receivers  
(2) (3)  
VCC2  
Mirror electrode and HVCMOS supply voltage  
7.25  
–27  
7.75  
26.5  
0.3  
VMBRST  
|VCC – VCCI  
Clocking pulse waveform voltage applied to MBRST[15:0] input pins (supplied by DLPA200)  
(3)  
|
Supply voltage delta (absolute value)  
ENVIRONMENTAL  
(6)  
mW/cm2  
W/cm2  
W
< 363 nm  
2
2.5  
3.7  
11  
(7)  
363 to 400 nm  
W/cm2  
W
(4) (5)  
(7)  
Illumination power density  
400 to 420 nm  
16.2  
11  
W/cm2  
W
(7)(8)  
363 to 420 nm total  
> 420 nm  
16.2  
(7)  
W/cm2  
°C  
Thermally limited  
(9) (10)  
(11)  
TC  
Case/array temperature  
20  
30  
(12)  
TGRADIENT  
RH  
Device temperature gradient – operational  
Relative humidity (non-condensing)  
10  
95  
°C  
%RH  
(13)  
Operating landed duty cycle  
25%  
(1) The functional performance of the device specified in this datasheet is achieved when operating the device within the limits defined by  
the Recommended Operating Conditions. No level of performance is implied when operating the device above or below the  
Recommended Operating Conditions limits.  
(2) All voltages referenced to VSS (ground).  
(3) Voltages VCC, VCCI, and VCC2, are required for proper DMD operation.  
(4) Various application parameters can affect optimal, long-term performance of the DMD, including illumination spectrum, illumination  
power density, micromirror landed duty cycle, ambient temperature (both storage and operating), case temperature, and power-on or  
power-off duty cycle. TI recommends that application-specific effects be considered as early as possible in the design cycle.  
(5) Total integrated illumination power density, above or below the indicated wavelength threshold or in the indicated wavelength range.  
(6) The maximum operating conditions for operating temperature and illumination power density for wavelengths < 363 nm should not be  
implemented simultaneously.  
(7) Also limited by the resulting micromirror array temperature. Refer to Case Temperature and Micromirror Array Temperature Calculation  
for information related to calculating the micromirror array temperature.  
(8) The total integrated illumination power density from 363 to 420 nm shall not exceed 11 W/cm2 (or 16.2 W evenly distributed on the  
active array area). Therefore if 2.5 W/cm2 of illumination is used in the 363 to 400 nm range, then illumination in the 400 to 420 nm  
range must be limited to 8.5 W/cm2.  
(9) In some applications, the total DMD heat load can be dominated by the amount of incident light energy absorbed. Refer to Micromirror  
Array Temperature Calculation for further details.  
(10) Temperature is the highest measured value of any test point shown in Figure 17 or the active array as calculated by the Micromirror  
Array Temperature Calculation.  
(11) Refer to Micromirror Array Temperature Calculation for thermal test point locations, package thermal resistance, and device  
temperature calculation.  
(12) As either measured, predicted, or both between any two points -- measured on the exterior of the package, or as predicted at any point  
inside the micromirror array cavity. Refer to Case Temperature and Micromirror Array Temperature Calculation.  
(13) Landed duty cycle refers to the percentage of time an individual micromirror spends landed in one state (12° or –12°) versus the other  
state (–12° or 12°).  
12  
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7.5 Thermal Information  
DLP7000UV  
(1) (2)  
THERMAL METRIC  
FLP (LCCC)  
203 PINS  
0.9  
UNIT  
Active micromirror array resistance to TP1  
°C/W  
(1) The DMD is designed to conduct absorbed and dissipated heat to the back of the package where it can be removed by an appropriate  
heat sink. The heat sink and cooling system must be capable of maintaining the package within the temperature range specified in the  
Recommended Operating Conditions. The total heat load on the DMD is largely driven by the incident light absorbed by the active area;  
although other contributions include light energy absorbed by the window aperture and electrical power dissipation of the array. Optical  
systems should be designed to minimize the light energy falling outside the window clear aperture since any additional thermal load in  
this area can significantly degrade the reliability of the device.  
(2) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report, SPRA953.  
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7.6 Electrical Characteristics  
over the range of recommended supply voltage and recommended case operating temperature (unless otherwise noted)  
PARAMETERS  
TEST CONDITIONS  
VCC = 3.0 V, IOH = –20 mA  
MIN  
TYP  
MAX  
UNIT  
(1)  
High-level output voltage  
See Figure 10  
,
VOH  
VOL  
2.4  
V
(1)  
Low-level output voltage  
See Figure 10  
,
VCC = 3.6 V, IOH = 15 mA  
0.4  
V
V
Clocking Pulse Waveform applied to  
VMBRST MBRST[29:0] Input Pins (supplied  
-27  
26.5  
by DLPA200)  
(1)  
IOZ  
IOH  
IOL  
High impedance output current  
VCC = 3.6 V  
10  
–20  
µA  
VOH = 2.4 V, VCC 3 V  
VOH = 1.7 V, VCC 2.25 V  
VOL = 0.4 V, VCC 3 V  
VOL = 0.4 V, VCC 2.25 V  
(1)  
High-level output current  
mA  
–15  
15  
(1)  
Low-level output current  
mA  
14  
(1)  
VIH  
VIL  
IIL  
High-level input voltage  
1.7  
VCC + .3  
0.7  
V
V
(1)  
Low-level input voltage  
–0.3  
(1)  
Low-level input current  
VCC = 3.6 V, VI = 0 V  
VCC = 3.6 V, VI = VCC  
VCC = 3.6 V  
–60  
µA  
µA  
mA  
mA  
mA  
W
(1)  
IIH  
High-level input current  
200  
ICC  
ICCI  
ICC2  
PD  
ZIN  
Current into VCC pin  
1475  
450  
(2)  
Current into VCCI pin  
VCCI = 3.6 V  
Current into VCC2 pin  
Power dissipation  
VCC2 = 8.75 V  
25  
2.0  
Internal differential impedance  
95  
90  
105  
110  
Ω
Line differential impedance (PWB,  
Trace)  
ZLINE  
100  
Ω
(1)  
CI  
Input capacitance  
f = 1 MHz  
f = 1 MHz  
10  
10  
pF  
pF  
(1)  
CO  
CIM  
Output capacitance  
Input capacitance for MBRST[0:15]  
pins  
f = 1 MHz  
220  
270  
pF  
(1) Applies to LVCMOS pins only.  
(2) Exceeding the maximum allowable absolute voltage difference between VCC and VCCI may result in excess current draw. See the  
Absolute Maximum Ratings for details.  
14  
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7.7 LVDS Timing Requirements  
over operating free-air temperature range (unless otherwise noted); see Figure 1  
MIN  
200  
2.5  
NOM  
MAX  
UNIT  
MHz  
ns  
fDCLK_*  
DCLK_* clock frequency {where * = [A, or B]}  
Clock cycle - DLCK_*  
400  
tc  
tw  
Pulse width - DLCK_*  
1.25  
ns  
ts  
Setup time - D_*[15:0] and SCTRL_* before DCLK_*  
Hold time, D_*[15:0] and SCTRL_* after DCLK_*  
Skew between bus A and B  
0.35  
0.35  
ns  
th  
ns  
tskew  
–1.25  
1.25  
ns  
DCLK_AN  
DCLK_AP  
t
t
h
s
t
c
t
t
s
h
SCTRL_AN  
SCTRL_AP  
D_AN(15:0)  
D_AP(15:0)  
DCLK_BN  
DCLK_BP  
t
t
s
h
t
c
t
t
s
h
SCTRL_BN  
SCTRL_BP  
D_BN(15:0)  
D_BP(15:0)  
Figure 1. LVDS Timing Waveforms  
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7.8 LVDS Waveform Requirements  
over operating free-air temperature range (unless otherwise noted); see Figure 2  
MIN  
NOM  
400  
MAX  
UNIT  
mV  
mV  
mV  
ps  
|VID  
|
Input differential voltage (absolute difference)  
Common mode voltage  
100  
600  
VCM  
1200  
VLVDS  
LVDS voltage  
0
100  
100  
2000  
400  
tr  
tr  
Rise time (20% to 80%)  
Fall time (80% to 20%)  
400  
ps  
VLVDS (v)  
VLVDSmax = VCM + |½VID|  
VLVDSmax  
Tf (20% - 80%)  
VLVDS = VCM +/- | 1/2 VID  
|
VCM  
VID  
Tr (20% - 80%)  
VLVDS min  
VLVDS min = 0  
Time  
Figure 2. LVDS Waveform Requirements  
16  
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ZHCSE66D MAY 2015REVISED MAY 2017  
7.9 Serial Control Bus Timing Requirements  
over operating free-air temperature range (unless otherwise noted); see Figure 3 and Figure 4  
MIN  
NOM  
MAX  
500  
300  
960  
UNIT  
kHz  
ns  
fSCP_CLK  
SCP clock frequency  
50  
tSCP_SKEW  
tSCP_DELAY  
Time between valid SCP_DI and rising edge of SCP_CLK  
Time between valid SCP_DO and rising edge of SCP_CLK  
–300  
ns  
Time between falling edge of SCP_EN and the first rising edge of  
SCP_CLK  
t SCP_EN  
30  
ns  
t_SCP  
tf_SCP  
Rise time for SCP signals  
Fall time for SCP signals  
200  
200  
ns  
ns  
t
f
= 1 / t  
c
c
clock  
SCPCLK  
50%  
50%  
tSCP_SKEW  
SCPDI  
50%  
tSCP_DELAY  
SCPD0  
50%  
Figure 3. Serial Communications Bus Timing Parameters  
tf_SCP  
tr_SCP  
Input Controller VCC  
SCP_CLK,  
SCP_DI,  
SCP_EN  
VCC/2  
0 v  
Figure 4. Serial Communications Bus Waveform Requirements  
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MAX UNIT  
7.10 Systems Mounting Interface Loads  
PARAMETER  
MIN  
NOM  
Thermal interface area (see Figure 5)  
111  
423  
400  
N
N
N
Maximum system mounting interface  
load to be applied to the:  
Electrical interface area  
(1)  
Datum A Interface area (see Figure 5 )  
(1) Combined loads of the thermal and electrical interface areas in excess of Datum A load shall be evenly distributed outside the Datum A  
area (423 + 111 – Datum A).  
Thermal  
Interface Area  
Electrical  
Interface Area  
(all area less thermal interface)  
Other Areas  
Datum ‘A’ Area  
Figure 5. System Interface Loads  
18  
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7.11 Micromirror Array Physical Characteristics  
VALUE  
1024  
768  
UNIT  
micromirrors  
micromirrors  
µm  
M
N
P
Number of active columns  
Number of active rows  
See Figure 6  
Micromirror (pixel) pitch  
13.68  
14.008  
10.506  
6
Micromirror active array width  
Micromirror active array height  
Micromirror active border  
M × P  
mm  
N × P  
mm  
(1)  
Pond of micromirror (POM)  
micromirrors/side  
(1) The structure and qualities of the border around the active array includes a band of partially functional micromirrors called the POM.  
These micromirrors are structurally and/or electrically prevented from tilting toward the bright or ON state, but still require an electrical  
bias to tilt toward OFF.  
0
1
2
3
DMD Active Array  
N x P  
M x N Micromirrors  
N œ 4  
N œ 3  
N œ 2  
N œ 1  
M x P  
P
Pond of micromirrors (POM) omitted for clarity.  
Details omitted for clarity.  
P
Not to scale.  
P
P
Refer to Micromirror Array Physical Characteristics for M, N, and P specifications.  
Figure 6. Micromirror Array Physical Characteristics  
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7.12 Micromirror Array Optical Characteristics  
TI assumes no responsibility for end-equipment optical performance. Achieving the desired end-equipment  
optical performance involves making trade-offs between numerous component and system design parameters.  
PARAMETER  
TEST CONDITIONS  
MIN  
NOM  
MAX  
UNIT  
DMD parked state (1) (2) (3), See  
Figure 12  
0
a
Micromirror tilt angle  
degrees  
DMD landed state (1) (4) (5)  
See Figure 12  
12  
(1) (4) (6) (7) (8)  
β
Micromirror tilt angle tolerance  
Micromirror crossover time (9)  
Micromirror switching time (10)  
See Figure 12  
–1  
43  
1
22  
22  
degrees  
µs  
4
13  
µs  
Array switching time at 400 MHz with global  
reset (11)  
µs  
Non-adjacent micromirrors  
Adjacent micromirrors  
10  
0
Non operating micromirrors (12)  
micromirrors  
degrees  
Orientation of the micromirror axis-of-rotation  
See Figure 11  
44  
45  
46  
(13)  
363 to 420 nm, with all micromirrors  
in the ON state  
(14) (15)  
Micromirror array optical efficiency  
66%  
(1) Measured relative to the plane formed by the overall micromirror array.  
(2) Parking the micromirror array returns all of the micromirrors to an essentially flat (0˚) state (as measured relative to the plane formed by  
the overall micromirror array).  
(3) When the micromirror array is parked, the tilt angle of each individual micromirror is uncontrolled.  
(4) Additional variation exists between the micromirror array and the package datums, as shown in the 机械、封装和可订购信息.  
(5) When the micromirror array is landed, the tilt angle of each individual micromirror is dictated by the binary contents of the CMOS  
memory cell associated with each individual micromirror. A binary value of 1 will result in a micromirror landing in an nominal angular  
position of +12°. A binary value of 0 results in a micromirror landing in an nominal angular position of –12°.  
(6) Represents the landed tilt angle variation relative to the Nominal landed tilt angle.  
(7) Represents the variation that can occur between any two individual micromirrors, located on the same device or located on different  
devices.  
(8) For some applications, it is critical to account for the micromirror tilt angle variation in the overall System Optical Design. With some  
System Optical Designs, the micromirror tilt angle variation within a device may result in perceivable non-uniformities in the light field  
reflected from the micromirror array. With some System Optical Designs, the micromirror tilt angle variation between devices may result  
in colorimetry variations and/or system contrast variations.  
(9) Micromirror crossover time is primarily a function of the natural response time of the micromirrors and is the time it takes for the  
micromirror to crossover to the other state, but does not include mechanical settling time.  
(10) Micromirror switching time is the time before a micromirror may be addressed again. Crossover time plus mechanical settling time.  
(11) Array switching is controlled and coordinated by the DLPC410 (DLPS024) and DLPA200 (DLPS015). Nominal Switching time depends  
on the system implementation and represents the time for the entire micromirror array to be refreshed (array loaded plus reset and  
mirror settling time).  
(12) Non-operating micromirror is defined as a micromirror that is unable to transition nominally from the –12° position to +12° or vice versa.  
(13) Measured relative to the package datums B and C, shown in the 机械、封装和可订购信息.  
(14) The minimum or maximum DMD optical efficiency observed depends on numerous application-specific design variables, such as:  
Illumination wavelength, bandwidth/line-width, degree of coherence  
Illumination angle, plus angle tolerance  
Illumination and projection aperture size, and location in the system optical path  
IIlumination overfill of the DMD micromirror array  
Aberrations present in the illumination source and/or path  
Aberrations present in the projection path  
The specified nominal DMD optical efficiency is based on the following use conditions:  
Visible illumination (363 to 420 nm)  
Input illumination optical axis oriented at 24° relative to the window normal  
Projection optical axis oriented at 0° relative to the window normal  
f / 3.0 illumination aperture  
f / 2.4 projection aperture  
Based on these use conditions, the nominal DMD optical efficiency results from the following four components:  
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Micromirror array fill factor: nominally 92%  
Micromirror array diffraction efficiency: nominally 85%  
Micromirror surface reflectivity: nominally 88%  
Window transmission: nominally 98% for wavelengths 363 nm to 420 nm, applies to all angles 0° to 30° AOI (Angle of Incidence)  
(single pass, through two surface transitions)  
(15) Does not account for the effect of micromirror switching duty cycle, which is application dependent. Micromirror switching duty cycle  
represents the percentage of time that the micromirror is actually reflecting light from the optical illumination path to the optical projection  
path. This duty cycle depends on the illumination aperture size, the projection aperture size, and the micromirror array update rate.  
7.13 Window Characteristics  
(1)  
PARAMETER  
Window material designation  
Window refractive index  
CONDITIONS  
MIN  
TYP  
MAX UNIT  
Corning 7056  
At wavelength 589 nm  
Per 25 mm  
1.487  
(2)  
Window flatness  
4
fringes  
µm  
(3)  
Window artifact size  
Within the Window Aperture  
400  
(4)  
Window aperture  
See  
Illumination overfill  
Refer to Illumination Overfill  
Window transmittance, single–pass  
through both surfaces and glass  
Within the wavelength range 363 nm to 420 nm. Applies to all  
angles 0 to 30 AOI  
98%  
(5)  
(1) See Window Characteristics and Optics for more information.  
(2) At a wavelength of 632.8 nm.  
(3) See the 机械、封装和可订购信息 section at the end of this document for details regarding the size and location of the window aperture.  
(4) For details regarding the size and location of the window aperture, see the package mechanical characteristics listed in the 机械、封装  
和可订购信息 section.  
(5) See the TI application report Wavelength Transmittance Considerations for DMD Window, DLPA031.  
7.14 Chipset Component Usage Specification  
The DLP7000UV is a component of one or more DLP chipsets. Reliable function and operation of the  
DLP7000UV requires that it be used in conjunction with the other components of the applicable DLP chipset,  
including those components that contain or implement TI DMD control technology. TI DMD control technology  
consists of the TI technology and devices for operating or controlling a DLP DMD.  
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8 Detailed Description  
8.1 Overview  
Optically, the DLP7000UV consists of 786432 highly reflective, digitally switchable, micrometer-sized mirrors  
(micromirrors), organized in a two-dimensional array of 1024 micromirror columns by 768 micromirror rows  
(Figure 11). Each aluminum micromirror is approximately 13.68 microns in size (see the Micromirror Pitch in  
Figure 11), and is switchable between two discrete angular positions: –12° and +12°. The angular positions are  
measured relative to a 0° flat state, which is parallel to the array plane (see Figure 12). The tilt direction is  
perpendicular to the hinge-axis which is positioned diagonally relative to the overall array. The On State landed  
position is directed towards Row 0, Column 0 (upper left) corner of the device package (see the Micromirror  
Hinge-Axis Orientation in Figure 11). In the field of visual displays, the 1024 by 768 pixel resolution is referred to  
as XGA.  
Each individual micromirror is positioned over a corresponding CMOS memory cell. The angular position of a  
specific micromirror is determined by the binary state (logic 0 or 1) of the corresponding CMOS memory cell  
contents, after the micromirror clocking pulse is applied. The angular position (–12° or +12°) of the individual  
micromirrors changes synchronously with a micromirror clocking pulse, rather than being synchronous with the  
CMOS memory cell data update. Therefore, writing a logic 1 into a memory cell followed by a micromirror  
clocking pulse will result in the corresponding micromirror switching to a +12° position. Writing a logic 0 into a  
memory cell followed by a micromirror clocking pulse will result in the corresponding micromirror switching to a  
–12° position.  
Updating the angular position of the micromirror array consists of two steps. First, updating the contents of the  
CMOS memory. Second, application of a Micromirror Clocking Pulse to all or a portion of the micromirror array  
(depending upon the configuration of the system). Micromirror Clocking Pulses are generated externally by a  
DLPA200, with application of the pulses being coordinated by the DLPC410 controller.  
Around the perimeter of the 1024 by 768 array of micromirrors is a uniform band of active border micromirrors.  
The pond of micromirror (POM) is not user-addressable. The border micromirrors land in the –12° position once  
power has been applied to the device. There are 10 border micromirrors on each side of the 1024 by 768 active  
array.  
Figure 7 shows a DLPC410 and DLP7000UV Chipset Block Diagram. The DLPC410 and DLPA200 control and  
coordinate the data loading and micromirror switching for reliable DLP7000UV operation. The DLPR410 is the  
programmed PROM required to properly configure the DLPC410 controller. For more information on the chipset  
components, see Application and Implementation. For a typical system application using the DLP Discovery 4100  
chipset including the DLP7000UV, see Figure 19.  
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8.2 Functional Block Diagram  
DLP7000UV  
Figure 7. DLPC410 and DLP7000UV Chipset Block Diagram  
8.3 Feature Description  
Table 1. DLPC410 DMD Types Overview  
DMD  
ARRAY  
1024 × 768  
PATTERNS/s  
DATA RATE (Gbs)  
25.6  
MIRROR PITCH  
(1)  
DLP7000UV - 0.7” XGA  
32552  
13.6 µm  
(1) This is for single block mode resets.  
Figure 7 is a simplified system block diagram showing the use of the following components:  
– Xilinx [XC5VLX30] FPGA configured to provide high-speed DMD data and control,  
and DLPA200 timing and control  
DLPC410  
DLPR410  
– [XCF16PFSG48C] serial flash PROM contains startup configuration information  
(EEPROM)  
DLPA200  
– DMD micromirror driver for the DLP7000UV DMD  
– Spatial Light Modulator (DMD)  
DLP7000UV  
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8.3.1 DLPC410 - Digital Controller for DLP Discovery 4100 Chipset  
The DLP7000UV chipset includes the DLPC410 controller which provides a high-speed LVDS data and control  
interface for DMD control. This interface is also connected to a second FPGA used to drive applications (not  
included in the chipset). The DLPC410 generates DMD and DLPA200 initialization and control signals in  
response to the inputs on the control interface.  
For more information, see the DLPC410 data sheet (DLPS024).  
8.3.2 DLPA200 DMD Micromirror Driver  
DLPA200 micromirror driver provides the micromirror clocking pulse driver functions for the DMD. One DLPA200  
is required for DLP7000UV.  
For more information on the DLPA200, see the DLPA200 data sheet (DLPS015).  
8.3.3 DLPR410 - PROM for DLP Discovery 4100 Chipset  
The DLPC410 is configured at startup from the serial flash PROM. The contents of this PROM can not be  
altered. For more information, see the DLPR410 data sheet (DLPS027) and the DLPC410 data sheet  
(DLPS024).  
8.3.4 DLP7000 - DLP 0.7 XGA 2xLVDS UV Type-A DMD  
8.3.4.1 DLP7000UV Chipset Interfaces  
This section will describe the interface between the different components included in the chipset. For more  
information on component interfacing, see Application and Implementation.  
8.3.4.1.1 DLPC410 Interface Description  
8.3.4.1.1.1 DLPC410 IO  
Table 2 describes the inputs and outputs of the DLPC410 to the user. For more details on these signals, see the  
DLPC410 data sheet.  
Table 2. Input/Output Description  
PIN NAME  
DESCRIPTION  
I/O  
I
ARST  
Asynchronous active low reset  
Reference clock, 50 MHz  
CLKIN_R  
I
DIN_[A,B,C,D](15:0)  
DCLKIN[A,B,C,D]  
DVALID[A,B,C,D]  
ROWMD(1:0)  
ROWAD(10:0)  
BLK_AD(3:0)  
BLK_MD(1:0)  
PWR_FLOAT  
DMD_TYPE(3:0)  
RST_ACTIVE  
INIT_ACTIVE  
VLED0  
LVDS DDR input for data bus A,B,C,D (15:0)  
LVDS inputs for data clock (200 - 400 MHz) on bus A, B, C, and D  
LVDS input used to start write sequence for bus A, B, C, and D  
DMD row address and row counter control  
DMD row address pointer  
I
I
I
I
I
DMD mirror block address pointer  
I
DMD mirror block reset and clear command modes  
Used to float DMD mirrors before complete loss of power  
DMD type in use  
I
I
O
O
O
O
O
Indicates DMD mirror reset in progress  
Initialization in progress  
System heartbeat signal  
VLED1  
Denotes initialization complete  
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8.3.4.1.1.2 Initialization  
The INIT_ACTIVE (Table 2) signal indicates that the DLP7000UV, DLPA200, and DLPC410 are in an  
initialization state after power is applied. During this initialization period, the DLPC410 is initializing the  
DLP7000UV and DLPA200 by setting all internal registers to their correct states. When this signal goes low, the  
system has completed initialization. System initialization takes approximately 220 ms to complete. Data and  
command write cycles should not be asserted during the initialization.  
During initialization the user must send a training pattern to the DLPC410 on all data and DVALID lines to  
correctly align the data inputs to the data clock. For more information, see the DLPC410 data sheet – Interface  
Training Pattern.  
8.3.4.1.1.3 DMD Device Detection  
The DLPC410 automatically detects the DMD type and device ID. DMD_TYPE (Table 2) is an output from the  
DLPC410 that contains the DMD information. Only DMDs sold with the chipset or kit are recognized by the  
automatic detection function. All other DMDs do not operate with the DLPC410.  
8.3.4.1.1.4 Power Down  
To ensure long term reliability of the DLP7000UV, a shutdown procedure must be executed. Prior to power  
removal, assert the PWR_FLOAT (Table 2) signal and allow approximately 300 µs for the procedure to complete.  
This procedure assures the mirrors are in a flat state.  
8.3.4.2 DLPC410 to DMD Interface  
8.3.4.2.1 DLPC410 to DMD IO Description  
Table 3 lists the available controls and status pin names and their corresponding signal type, along with a brief  
functional description.  
Table 3. DLPC410 to DMD I/O Pin Descriptions  
PIN NAME  
DDC_DOUT_[A,B,C,D](15:0)  
DDC_DCLKOUT_[A,B,C,D]  
DDC_SCTRL_[A,B,C,D]  
DESCRIPTION  
I/O  
O
LVDS DDR output to DMD data bus A, B, C, D (15:0)  
LVDS output to DMD data clock A, B, C, D  
LVDS DDR output to DMD data control A, B, C, D  
O
O
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8.3.4.2.2 Data Flow  
Figure 8 shows the data traffic through the DLPC410. Special considerations are necessary when laying out the  
DLPC410 to allow best signal flow.  
LVDS BUS D  
sDIN_D(15:0)  
sDCLK_D  
LVDS BUS C  
sDIN_C(15:0)  
sDCLK_C  
sDVALID_C  
sDVALID_D  
DLPC410  
LVDS BUS D  
sDOUT_D(15:0)  
sDCLKOUT_D  
sSCTRL_D  
LVDS BUS A  
sDOUT_A(15:0)  
sDCLKOUT_A  
sSCTRL_A  
Figure 8. DLPC410 Data Flow  
Two LVDS buses transfer the data from the user to the DLPC410. Each bus has its data clock that is input edge  
aligned with the data (DCLK). Each bus also has its own validation signal that qualifies the data input to the  
DLPC410 (DVALID).  
Output LVDS buses transfer data from the DLPC410 to the DLP7000UV. Output buses LVDS A and LVDS B are  
used as highlighted in Figure 8.  
8.3.4.3 DLPC410 to DLPA200 Interface  
8.3.4.3.1 DLPA200 Operation  
The DLPA200 DMD Micromirror Driver is a mixed-signal Application Specific Integrated Circuit (ASIC) that  
combines the necessary high-voltage power supply generation and Micromirror Clocking Pulse functions for a  
family of DMDs. The DLPA200 is programmable and controllable to meet all current and anticipated DMD  
requirements.  
The DLPA200 operates from a +12 volt power supply input. For more detailed information on the DLPA200, see  
the DLPA200 data sheet.  
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8.3.4.3.2 DLPC410 to DLPA200 IO Description  
The Serial Communications Port (SCP) is a full duplex, synchronous, character-oriented (byte) port that allows  
exchange of commands from the DLPC410 to the DLPA200. One SCP bus is used for the DLP7000UV.  
DLPA200  
SCP bus  
DLPC410  
SCP bus  
DLPA200  
(Only with 1080p DMD)  
Figure 9. Serial Port System Configuration  
There are five signal lines associated with the SCP bus: SCPEN, SCPCK, SCPDI, SCPDO, and IRQ.  
Table 4 lists the available controls and status pin names and their corresponding signal type, along with a brief  
functional description.  
Table 4. DLPC410 to DLPA200 I/O Pin Descriptions  
PIN NAME  
A_SCPEN  
DESCRIPTION  
Active low chip select for DLPA200 serial bus  
DLPA200 control signal strobe  
DLPA200 mode control  
I/O  
O
O
O
O
O
O
O
O
O
O
A_STROBE  
A_MODE(1:0)  
A_SEL(1:0)  
A_ADDR(3:0)  
B_SCPEN  
DLPA200 select control  
DLPA200 address control  
Active low chip select for DLPA200 serial bus (2)  
DLPA200 control signal strobe (2)  
DLPA200 mode control  
B_STROBE  
B_MODE(1:0)  
B_SEL(1:0)  
B_ADDR(3:0)  
DLPA200 select control  
DLPA200 address control  
The DLPA200 provides a variety of output options to the DMD by selecting logic control inputs: MODE[1:0],  
SEL[1:0] and reset group address A[3:0] (Table 4). The MODE[1:0] input determines whether a single output, two  
outputs, four outputs, or all outputs, will be selected. Output levels (VBIAS, VOFFSET, or VRESET) are selected  
by SEL[1:0] pins. Selected outputs are tri-stated on the rising edge of the STROBE signal and latched to the  
selected voltage level after a break-before-make delay. Outputs will remain latched at the last Micromirror  
Clocking Pulse waveform level until the next Micromirror Clocking Pulse waveform cycle.  
8.3.4.4 DLPA200 to DLP7000UV Interface Overview  
The DLPA200 generates three voltages: VBIAS, VRESET, and VOFFSET that are supplied to the DMD MBRST  
lines in various sequences through the Micromirror Clocking Pulse driver function. VOFFSET is also supplied  
directly to the DMD as DMDVCC2. A fourth DMD power supply, DMDVCC, is supplied directly to the DMD by  
regulators.  
The function of the Micromirror Clocking Pulse driver is to switch selected outputs in patterns between the three  
voltage levels (VBIAS, VRESET and VOFFSET) to generate one of several Micromirror Clocking Pulse  
waveforms. The order of these Micromirror Clocking Pulse waveform events is controlled externally by the logic  
control inputs and timed by the STROBE signal. DLPC410 automatically detects the DMD type and then uses the  
DMD type to determine the appropriate Micromirror Clocking Pulse waveform.  
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A direct Micromirror Clocking Pulse operation causes a mirror to transition directly from one latched state to the  
next. The address must already be set up on the mirror electrodes when the Micromirror Clocking Pulse is  
initiated. Where the desired mirror display period does not allow for time to set up the address, a Micromirror  
Clocking Pulse with release can be performed. This operation allows the mirror to go to a relaxed state  
regardless of the address while a new address is set up, after which the mirror can be driven to a new latched  
state.  
A mirror in the relaxed state typically reflects light into a system collection aperture and can be thought of as off  
although the light is likely to be more than a mirror latched in the off state. System designers should carefully  
evaluate the impact of relaxed mirror conditions on optical performance.  
8.3.5 Measurement Conditions  
The data sheet provides timing at the device pin. For output timing analysis, the tester pin electronics and its  
transmission line effects must be taken into account. Figure 10 shows an equivalent test load circuit for the  
output under test. The load capacitance value stated is only for characterization and measurement of AC timing  
signals. This load capacitance value does not indicate the maximum load the device is capable of driving. All rise  
and fall transition timing parameters are referenced to VIL MAX and VIH MIN for input clocks, VOL MAX and VOH  
MIN for output clocks.  
LOAD CIRCUIT  
R
L
From Output  
Under Test  
Tester  
Channel  
C
C
= 50 pF  
L
L
= 5 pF for Disable Time  
Figure 10. Test Load Circuit for AC Timing Measurements  
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Incident  
Illumination  
Package Pin  
A1 Corner  
Details Omitted For Clarity.  
Not To Scale.  
DMD  
Micromirror  
Array  
Active Micromirror Array  
(Border micromirrors eliminated for clarity)  
0
Nœ1  
Micromirror Pitch  
Micromirror Hinge-Axis Orientation  
P (um)  
—On-State“  
Tilt Direction  
45°  
—Off-State“  
Tilt Direction  
P (um)  
Figure 11. DMD Micromirror Array, Pitch, and Hinge-Axis Orientation  
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Package Pin  
A1 Corner  
DLP7000UV  
Two Two  
“On-State” “Off-State”  
Micromirrors Micromirrors  
For Reference  
Flat-State  
( “parked” )  
Micromirror Position  
a
b
-a  
b
Silicon Substrate  
Silicon Substrate  
“On-State”  
Micromirror  
“Off-State”  
Micromirror  
Figure 12. Micromirror Landed Positions and Light Paths  
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8.4 Device Functional Modes  
8.4.1 DMD Operation  
The DLP7000UV has only one functional mode, it is set to be highly optimized for low latency and high speed in  
generating mirror clocking pulses and timings.  
When operated with the DLPC410 controller in conjunction with the DLPA200 driver, the DLP7000UV can be  
operated in several display modes. The DLP7000UV is loaded as 16 blocks of 48 rows each. Figure 13,  
Figure 14, Figure 15, and Figure 16 show how the image is loaded by the different Micromirror Clocking Pulse  
modes.  
There are four Micromirror Clocking Pulse modes that determine which blocks are reset when a Micromirror  
Clocking Pulse command is issued:  
Single block mode  
Dual block mode  
Quad block mode  
Global mode  
8.4.1.1 Single Block Mode  
In single block mode, a single block can be loaded and reset in any order. After a block is loaded, it can be reset  
to transfer the information to the mechanical state of the mirrors.  
Data Loaded  
Reset  
Figure 13. Single Block Mode  
8.4.1.2 Dual Block Mode  
In dual block mode, reset blocks are paired together as follows (0-1), (2-3), (4-5) . . . (14-15). These pairs can be  
reset in any order. After data is loaded a pair can be reset to transfer the information to the mechanical state of  
the mirrors.  
Data Loaded  
Reset  
Figure 14. Dual Block Mode  
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Device Functional Modes (continued)  
8.4.1.3 Quad Block Mode  
In quad block mode, reset blocks are grouped together in fours as follows (0-3), (4-7), (8-11) and (12-15). Each  
quad group can be randomly addressed and reset. After a quad group is loaded, it can be reset to transfer the  
information to the mechanical state of the mirrors.  
Data Loaded  
Reset  
Figure 15. Quad Block Mode  
8.4.1.4 Global Mode  
In global mode, all reset blocks are grouped into a single group and reset together. The entire DMD must be  
loaded with the desired data before issuing a Global Reset to transfer the information to the mechanical state of  
the mirrors.  
Reset  
Data Loaded  
Figure 16. Global Mode  
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8.5 Window Characteristics and Optics  
NOTE  
TI assumes no responsibility for image quality artifacts or DMD failures caused by optical  
system operating conditions exceeding limits described previously.  
8.5.1 Optical Interface and System Image Quality  
TI assumes no responsibility for end-equipment optical performance. Achieving the desired end-equipment  
optical performance involves making trade-offs between numerous component and system design parameters.  
Optimizing system optical performance and image quality strongly relate to optical system design parameter  
trades. Although it is not possible to anticipate every conceivable application, projector image quality and optical  
performance is contingent on compliance to the optical system operating conditions described in the following  
sections.  
8.5.2 Numerical Aperture and Stray Light Control  
The angle defined by the numerical aperture of the illumination and projection optics at the DMD optical area  
should be the same. This angle should not exceed the nominal device mirror tilt angle unless appropriate  
apertures are added in the illumination and/or projection pupils to block out flat-state and stray light from the  
projection lens. The mirror tilt angle defines DMD capability to separate the ON optical path from any other light  
path, including undesirable flat-state specular reflections from the DMD window, DMD border structures, or other  
system surfaces near the DMD such as prism or lens surfaces. If the numerical aperture exceeds the mirror tilt  
angle, or if the projection numerical aperture angle is more than two degrees larger than the illumination  
numerical aperture angle, objectionable artifacts in the display’s border and/or active area could occur.  
8.5.3 Pupil Match  
TI recommends the exit pupil of the illumination is nominally centered within 2° (two degrees) of the entrance  
pupil of the projection optics. Misalignment of pupils can create objectionable artifacts in the display’s border  
and/or active area, which may require additional system apertures to control, especially if the numerical aperture  
of the system exceeds the pixel tilt angle.  
8.5.4 Illumination Overfill  
The active area of the device is surrounded by an aperture on the inside DMD window surface that masks  
structures of the DMD device assembly from normal view. The aperture is sized to anticipate several optical  
operating conditions. Overfill light illuminating the window aperture can create artifacts from the edge of the  
window aperture opening and other surface anomalies that may be visible on the screen. The illumination optical  
system should be designed to limit light flux incident anywhere on the window aperture from exceeding  
approximately 10% of the average flux level in the active area. Depending on the particular system’s optical  
architecture, overfill light may have to be further reduced below the suggested 10% level in order to be  
acceptable.  
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8.6 Micromirror Array Temperature Calculation  
Achieving optimal DMD performance requires proper management of the maximum DMD case temperature, the  
maximum temperature of any individual micromirror in the active array, the maximum temperature of the window  
aperture, and the temperature gradient between case temperature and the predicted micromirror array  
temperature (See Figure 17).  
See the Recommended Operating Conditions for applicable temperature limits.  
8.6.1 Package Thermal Resistance  
The DMD is designed to conduct absorbed and dissipated heat to the back of the Type A package where it can  
be removed by an appropriate heat sink. The heat sink and cooling system must be capable of maintaining the  
package within the specified operational temperatures, refer to Figure 17. The total heat load on the DMD is  
typically driven by the incident light absorbed by the active area; although other contributions include light energy  
absorbed by the window aperture and electrical power dissipation of the array.  
8.6.2 Case Temperature  
The temperature of the DMD case can be measured directly. For consistency, Thermal Test Point locations 1, 2,  
and 3 are defined, as shown in Figure 17.  
3X 15.88  
TP1  
TP3  
TP2  
TP3 (TP2)  
Array  
TP2  
TP3  
TP1  
10.16  
Figure 17. Thermal Test Point Location  
34  
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Micromirror Array Temperature Calculation (continued)  
8.6.3 Micromirror Array Temperature Calculation  
Active array temperature cannot be measured directly; therefore, it must be computed analytically from  
measurement points on the outside of the package, package thermal resistance, electrical power, and  
illumination heat load. The relationship between array temperature and the reference ceramic temperature (test  
point number 1 in Figure 17) is provided by the following equations:  
TArray = Measured Ceramic temperature at location (test point number 3) + (Temperature increase due to power incident  
to the array × array-to-ceramic resistance)  
(1)  
TArray = TCeramic+ (QArray × RArray-To-Ceramic  
)
where  
TCeramic = Measured ceramic temperature (°C) at location (test point number 3)  
RArray-To-Ceramic = DMD package thermal resistance from array to outside ceramic (°C/W)  
QArray = Total DMD array power, which is both electrical plus absorbed on the DMD active array (W)  
QArray = QElectrical + (QIllumination × DMD absorption constant (0.42))  
where  
QElectrical = Approximate nominal electrical internal power dissipation (W)  
QIllumination = [Illumination power density × illumination area on DMD] (W)  
DMD absorption constant = 0.42  
(2)  
The electrical power dissipation of the DMD is variable and depends on the voltages, data rates and operating  
frequencies. The nominal electrical power dissipation of the DMD is variable and depends on the operating state  
of mirrors and the intensity of the light source. The DMD absorption constant of 0.42 assumes nominal operation  
with an illumination distribution of 83.7% on the active array, 11.9% on the array border, and 4.4% on the window  
aperture. A system aperture may be required to limit power incident on the package aperture since this area  
absorbs much more efficiently than the array.  
Sample Calculation:  
Illumination power density = 2 W/cm2  
Illumination area = (1.4008 cm × 1.0506 cm) / 83.7% = 1.76 cm2 (assumes 83.7% on the active array and  
16.3% overfill)  
QIllumination= 2 W/cm2 × 1.76 cm2 = 3.52 W  
QElectrical= 2.0 W  
RArray-To-Ceramic = 0.9°C/W  
TCeramic= 20°C (measured on ceramic)  
QArray = 2.0 W + (3.52 W × 0.42) = 3.48 W  
TArray = 20°C + (3.48 W × 0.9°C/W) =23.1°C  
(3)  
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8.7 Micromirror Landed-On/Landed-Off Duty Cycle  
8.7.1 Definition of Micromirror Landed-On/Landed-Off Duty Cycle  
The micromirror landed-on/landed-off duty cycle (landed duty cycle) denotes the amount of time (as a  
percentage) that an individual micromirror is landed in the On–state versus the amount of time the same  
micromirror is landed in the Off–state.  
As an example, a landed duty cycle of 100/0 indicates that the referenced pixel is in the On-state 100% of the  
time (and in the Off-state 0% of the time); whereas 0/100 would indicate that the pixel is in the Off-state 100% of  
the time. Likewise, 50/50 indicates that the pixel is On 50% of the time and Off 50% of the time.  
Note that when assessing landed duty cycle, the time spent switching from one state (ON or OFF) to the other  
state (OFF or ON) is considered negligible and is thus ignored.  
Since a micromirror can only be landed in one state or the other (On or Off), the two numbers (percentages)  
always add to 100.  
8.7.2 Landed Duty Cycle and Useful Life of the DMD  
Knowing the long-term average landed duty cycle (of the end product or application) is important because  
subjecting all (or a portion) of the DMD’s micromirror array (also called the active array) to an asymmetric landed  
duty cycle for a prolonged period of time can reduce the DMD’s usable life.  
Note that it is the symmetry/asymmetry of the landed duty cycle that is of relevance. The symmetry of the landed  
duty cycle is determined by how close the two numbers (percentages) are to being equal. For example, a landed  
duty cycle of 50/50 is perfectly symmetrical whereas a landed duty cycle of 100/0 or 0/100 is perfectly  
asymmetrical.  
8.7.3 Landed Duty Cycle and Operational DMD Temperature  
Operational DMD Temperature and Landed Duty Cycle interact to affect the DMD’s usable life, and this  
interaction can be exploited to reduce the impact that an asymmetrical Landed Duty Cycle has on the DMD’s  
usable life.  
In practice, this curve specifies the Maximum Operating DMD Temperature that the DMD should be operated at  
for a given long-term average Landed Duty Cycle.  
8.7.4 Estimating the Long-Term Average Landed Duty Cycle of a Product or Application  
During a given period of time, the Landed Duty Cycle of a given pixel follows from the image content being  
displayed by that pixel.  
For example, in the simplest case, when displaying pure-white on a given pixel for a given time period, that pixel  
will experience a 100/0 Landed Duty Cycle during that time period. Likewise, when displaying pure-black, the  
pixel will experience a 0/100 Landed Duty Cycle.  
Between the two extremes (ignoring for the moment color and any image processing that may be applied to an  
incoming image), the Landed Duty Cycle tracks one-to-one with the gray scale value, as shown in Table 5.  
36  
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Table 5. Grayscale Value and Landed Duty Cycle  
GRAYSCALE VALUE  
LANDED DUTY CYCLE  
0%  
10%  
20%  
30%  
40%  
50%  
60%  
70%  
80%  
90%  
100%  
0/100  
10/90  
20/80  
30/70  
40/60  
50/50  
60/40  
70/30  
80/20  
90/10  
100/0  
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9 Application and Implementation  
NOTE  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
9.1 Application Information  
The DLP7000UV devices require they be coupled with the DLPC410 controller to provide a reliable solution for  
many different applications. The DMDs are spatial light modulators which reflect incoming light from an  
illumination source to one of two directions, with the primary direction being into a projection collection optic.  
Each application is derived primarily from the optical architecture of the system and the format of the data  
coming into the DLPC410. Applications of interest include lithography, 3D Printing, medical systems, and  
compressive sensing.  
9.1.1 DMD Reflectivity Characteristics  
TI assumes no responsibility for end-equipment reflectivity performance. Achieving the desired end-equipment  
reflectivity performance involves making trade-offs between numerous component and system design  
parameters. DMD reflectivity characteristics over UV exposure times are represented in Figure 18.  
100  
90  
80  
70  
60  
50  
40  
30  
20  
20èC  
25èC  
10  
30èC  
0
0
10000  
20000  
30000  
40000  
50000  
Exposure Hours  
D001  
2.3 W/cm2, 363 to 400 nm  
Figure 18. Nominal DMD Relative Reflectivity Percentage and Exposure Hours  
DMD reflectivity includes micromirror surface reflectivity and window transmission. The DMD was characterized  
for DMD reflectivity using a broadband light source (200-W metal-halide lamp). Data is based off of a 2.3-W/cm2  
UV exposure at the DMD surface (363-nm peak output) using a 363-nm high-pass filter between the light source  
and the DMD. (Contact your local Texas Instruments representative for additional information about power  
density measurements and UV filter details.)  
9.1.2 Design Considerations Influencing DMD Reflectivity  
Optimal, long-term performance of the digital micromirror device (DMD) can be affected by various application  
parameters. Below is a list of some of these application parameters and includes high level design  
recommendations that may help extend relative reflectivity from time zero:  
Illumination spectrum – using longer wavelengths for operation while preventing shorter wavelengths from  
striking the DMD  
Illumination power density – using lower power density  
DMD case temperature – operating the DMD with the case temperature at the low end of its specification  
Cumulative incident illumination – limiting the total hours of UV illumination exposure when the DMD is not  
38  
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Application Information (continued)  
actively steering UV light in the application. For example, a design might include a shutter to block the  
illumination or LED illumination where the LEDs can be strobed off during periods not requiring UV exposure.  
Micromirror landed duty cycle – applying a 50/50 duty cycle pattern during periods where operational patterns  
are not required.  
9.2 Typical Application  
OPTICAL  
SENSOR  
(CAMERA)  
LED  
DRIVERS  
LEDS  
O
LED  
SENSORS  
LVDS BUS (A,B)  
DDC_DCLK, DVALID, DDC_DIN(15:0)  
LVDS BUS (A,B)  
DDC_DCLKOUT, DDCSCTRL, DDC_DOUT(15:0)  
USER  
INTERFACE  
SCP BUS  
SCPCLK, SCPDO, SCPDI, DMD_SCPENZ, A_SCPENZ  
ROW and BLOCK SIGNALS  
ROWMD(1:0), ROWAD(10:0), BLKMD(1:0), BLKAD(3:0), RST2BLKZ  
CONTROL SIGNALS  
COMP_DATA, NS_FLIP, WDT_ENBLZ, PWR_FLOAT  
DLP7000UV  
DLPA200 CONTROL  
A_MODE(1:0), A_SEL(1:0),  
DLPA200  
MBRST1_(15:0)  
CONNECTIVITY  
USER - MAIN  
DLPC410 INFO SIGNALS  
RST_ACTIVE, INIT_ACTIVE, ECP2_FINISHED,  
DMD_TYPE(3:0), DDC_VERSION(2:0)  
(USB, ETHERNET, ETC.)  
A_ADDR(3:0), OEZ, INIT  
PROCESSOR / FPGA  
A
DLPC410  
PGM SIGNALS  
PROM_CCK_DDC, PROGB_DDC,  
PROM_DO_DDC, DONE_DDC, INTB_DDC  
DLPR410  
VOLATILE  
and  
NON-VOLATILE  
STORAGE  
JTAG  
VLED0  
VLED1  
ARSTZ  
CLKIN_R  
OSC  
50 MHz  
DMD_RESET  
POWER MANAGMENT  
~
Figure 19. DLPC410 and DLP7000UV Embedded Example Block Diagram  
9.2.1 Design Requirements  
All applications using the DLP7000UV chipset require both the controller and the DMD components for operation.  
The system also requires an external parallel flash memory device loaded with the DLPC410 Configuration and  
Support Firmware. The chipset has several system interfaces and requires some support circuitry. The following  
interfaces and support circuitry are required:  
DLPC410 system interfaces:  
Control interface  
Trigger interface  
Input data interface  
Illumination interface  
Reference clock  
DLP7000UV interfaces:  
DLPC410 to DLP7000UV digital data  
DLPC410 to DLP7000UV control interface  
DLPC410 to DLP7000UV micromirror reset control interface  
DLPC410 to DLPA200 micromirror driver  
DLPA200 to DLP7000UV micromirror reset  
Device Description:  
The DLP7000UV XGA chipset offers developers a convenient way to design a wide variety of industrial, medical,  
telecom and advanced display applications by delivering maximum flexibility in formatting data, sequencing data,  
and light patterns.  
The DLP7000UV XGA chipset includes the following four components: DMD Digital Controller (DLPC410),  
EEPROM (DLPR410), DMD Micromirror Driver (DLPA200), and a DMD (DLP7000UV).  
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Typical Application (continued)  
DLPC410 Digital Controller for DLP Discovery 4100 chipset  
Provides high speed LVDS data and control interface to the DLP7000UV.  
Drives mirror clocking pulse and timing information to the DLPA200.  
Supports random row addressing.  
DLPR410 PROM for DLP Discovery 4100 chipset  
Contains startup configuration information for the DLPC410.  
DLPA200 DMD Micromirror Driver  
Generates Micromirror Clocking Pulse control (sometimes referred to as a Reset) of DMD mirrors.  
DLP7000UV DLP 0.7XGA 2xLVDS UV Type-A DMD  
Steers light in two digital positions (+12° and –12°) using 1024 × 768 micromirror array of aluminum mirrors.  
Table 6. DLP Discovery 4100 Chipset Configuration: 0.7 XGA Chipset  
QTY  
TI PART  
DLP7000UV  
DLPC410  
DLPR410  
DLPA200  
DESCRIPTION  
DLP 0.7XGA 2xLVDS UV Type-A DMD  
Digital Controller for DLP Discovery 4100 chipset  
DLP Discovery 4100 configuration PROM  
DMD micromirror driver  
1
1
1
1
Reliable function and operation of DLP7000UV XGA chipsets require the components be used in conjunction  
with each other. This document describes the proper integration and use of the DLP7000UV XGA chipset  
components.  
The DLP7000UV XGA chipset can be combined with a user programmable Application FPGA (not included) to  
create high performance systems.  
9.2.2 Detailed Design Procedure  
The DLP7000UV DMD is designed with a window which allows transmission of Ultra-Violet (UV) light. This  
makes it well suited for UV applications requiring fast, spatially programmable light patterns using the micromirror  
array. UV wavelengths can affect the DMD differently than visible wavelengths. There are system level  
considerations which should be leveraged when designing systems using this DMD.  
40  
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9.2.3 Application Curve  
100  
90  
80  
70  
UV AOI = 0o  
60  
50  
40  
30  
20  
10  
0
300  
320  
340  
360  
380  
400  
420  
440  
460  
480  
500  
Wavelength (nm)  
Type A UVA on 7056 glass (3-mm thick)  
Figure 20. Corning 7056 Nominal UV Window Transmittance (Maximum Transmission Region)  
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10 Power Supply Recommendations  
10.1 Power-Up Sequence (Handled by the DLPC410)  
The sequence of events for DMD system power-up is:  
1. Apply logic supply voltages to the DLPA200 and to the DMD according to DMD specifications.  
2. Place DLPA200 drivers into high impedance states.  
3. Turn on DLPA200 bias, offset, or reset supplies according to driver specifications.  
4. After all supply voltages are assured to be within the limits specified and with all micromirror clocking pulse  
operations logically suspended, enable all drivers to either VOFFSET or VBIAS level.  
5. Begin micromirror clocking pulse operations.  
Repeated failure to adhere to the prescribed power-up and power-down procedures may affect device reliability.  
The DLP7000UV power-up and power-down procedures are defined by the DLPC410 data sheet (DLPS024).  
These procedures must be followed to ensure reliable operation of the device.  
11 Layout  
11.1 Layout Guidelines  
The DLP7000UV is part of a chipset that is controlled by the DLPC410 in conjunction with the DLPA200. These  
guidelines are targeted at designing a PCB board with these components.  
11.1.1 Impedance Requirements  
Signals should be routed to have a matched impedance of 50 Ω ±10% except for LVDS differential pairs  
(DMD_DAT_Xnn, DMD_DCKL_Xn, and DMD_SCTRL_Xn), which should be matched to 100 Ω ±10% across  
each pair.  
11.1.2 PCB Signal Routing  
When designing a PCB board for the DLP7000UV controlled by the DLPC410 in conjunction with the DLPA200,  
the following are recommended:  
Signal trace corners should be no sharper than 45°. Adjacent signal layers should have the predominate traces  
routed orthogonal to each other. TI recommends that critical signals be hand routed in the following order: DDR2  
Memory, DMD (LVDS signals), then DLPA200 signals.  
TI does not recommend signal routing on power or ground planes.  
TI does not recommend ground plane slots.  
High speed signal traces should not crossover slots in adjacent power and/or ground planes.  
Table 7. Important Signal Trace Constraints  
SIGNAL  
CONSTRAINTS  
P-to-N data, clock, and SCTRL: <10 mils (0.25 mm); Pair-to-pair <10 mils (0.25 mm); Bundle-to-bundle  
<2000 mils (50 mm, for example DMD_DAT_Ann to DMD_DAT_Bnn)  
Trace width: 4 mil (0.1 mm)  
Trace spacing: In ball field – 4 mil (0.11 mm); PCB etch – 14 mil (0.36 mm)  
Maximum recommended trace length <6 inches (150 mm)  
LVDS (DMD_DAT_xnn,  
DMD_DCKL_xn, and  
DMD_SCTRL_xn)  
Table 8. Power Trace Widths and Spacing  
MINIMUM TRACE  
MINIMUM TRACE  
SPACING  
SIGNAL NAME  
LAYOUT REQUIREMENTS  
WIDTH  
GND  
Maximize  
5 mil (0.13 mm)  
10 mil (0.25 mm)  
10 mil (0.25 mm)  
Maximize trace width to connecting pin as a minimum  
VCC, VCC2  
MBRST[15:0]  
20 mil (0.51 mm)  
10 mil (0.25 mm)  
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11.1.3 Fiducials  
Fiducials for automatic component insertion should be 0.05-inch copper with a 0.1-inch cutout (antipad). Fiducials  
for optical auto insertion are placed on three corners of both sides of the PCB.  
11.1.4 PCB Layout Guidelines  
A target impedance of 50 for single ended signals and 100 between LVDS signals is specified for all signal  
layers.  
11.1.4.1 DMD Interface  
The digital interface from the DLPC410 to the DMD are LVDS signals that run at clock rates up to 400 MHz. Data  
is clocked into the DMD on both the rising and falling edge of the clock, so the data rate is 800 MHz. The LVDS  
signals should have 100-differential impedance. The differential signals should be matched but kept as short  
as possible. Parallel termination at the LVDS receiver is in the DMD; therefore, on board termination is not  
necessary.  
11.1.4.1.1 Trace Length Matching  
The DLPC410 DMD data signals require precise length matching. Differential signals should have impedance of  
100 (with 5% tolerance). It is important that the propagation delays are matched. The maximum differential pair  
uncoupled length is 100 mils with a relative propagation delay of ±25 mil between the p and n. Matching all  
signals exactly will maximize the channel margin. The signal path through all boards, flex cables and internal  
DMD routing must be considered in this calculation.  
11.1.4.2 DLP7000UV Decoupling  
General decoupling capacitors for the DLP7000UV should be distributed around the PCB and placed to minimize  
the distance from IC voltage and ground pads. Each decoupling capacitor (0.1 µF recommended) should have  
vias directly to the ground and power planes. Via sharing between components (discreet or integrated) is  
discouraged. The power and ground pads of the DLP7000UV should be tied to the voltage and ground planes  
with their own vias.  
11.1.4.2.1 Decoupling Capacitors  
Decoupling capacitors should be placed to minimize the distance from the decoupling capacitor to the supply and  
ground pin of the component. It is recommended that the placement of and routing for the decoupling capacitors  
meet the following guidelines:  
The supply voltage pin of the capacitor should be located close to the device supply voltage pin(s). The  
decoupling capacitor should have vias to ground and voltage planes. The device can be connected directly to  
the decoupling capacitor (no via) if the trace length is less than 0.1 inch. Otherwise, the component should be  
tied to the voltage or ground plane through separate vias.  
The trace lengths of the voltage and ground connections for decoupling capacitors and components should  
be less than 0.1 inch to minimize inductance.  
The trace width of the power and ground connection to decoupling capacitors and components should be as  
wide as possible to minimize inductance.  
Connecting decoupling capacitors to ground and power planes through multiple vias can reduce inductance  
and improve noise performance.  
Decoupling performance can be improved by utilizing low ESR and low ESL capacitors.  
11.1.4.3 VCC and VCC2  
The VCC pins of the DMD should be connected directly to the DMD VCC plane. Decoupling for the VCC should  
be distributed around the DMD and placed to minimize the distance from the voltage and ground pads. Each  
decoupling capacitor should have vias directly connected to the ground and power planes. The VCC and GND  
pads of the DMD should be tied to the VCC and ground planes with their own vias.  
The VCC2 voltage can be routed to the DMD as a trace. Decoupling capacitors should be placed to minimize the  
distance from the VCC2 and ground pads of the DMD. Using wide etch from the decoupling capacitors to the  
DMD connection will reduce inductance and improve decoupling performance.  
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11.1.4.4 DMD Layout  
See the respective sections in this data sheet for package dimensions, timing and pin out information.  
11.1.4.5 DLPA200  
The DLPA200 generates the micromirror clocking pulses for the DMD. The DMD-drive outputs from the  
DLPA200 (MBRST[15:0]) should be routed with minimum trace width of 11 mil and a minimum spacing of 15 mil.  
The VCC and VCC2 traces from the output capacitors to the DLPA200 should also be routed with a minimum  
trace width and spacing of 11 mil and 15 mil, respectively. See the DLPA200 customer data sheet (DLPS015) for  
mechanical package and layout information.  
11.2 Layout Example  
For LVDS (and other differential signal) pairs and groups, it is important to match trace lengths. In the area of the  
dashed lines, Figure 21 shows correct matching of signal pair lengths with serpentine sections to maintain the  
correct impedance.  
Figure 21. Mitering LVDS Traces to Match Lengths  
44  
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12 器件和文档支持  
12.1 器件支持  
12.1.1 器件命名规则  
22 提供了读取任一 DLP 器件完整器件名称的图例。  
22. 器件命名规则  
12.1.1.1 器件标记  
器件标记由 23 中显示的字段组成。  
TI Internal Numbering  
2-Dimensional Matrix Code  
(DMD Part Number and  
Serial Number)  
DMD Part Number  
YYYYYYY  
DLP7000UVFLP  
GHXXXXX LLLLLLM  
LLLLLL  
Part 2 of Serial Number  
(7 characters)  
Part 1 of Serial Number  
(7 characters)  
TI Internal Numbering  
23. 器件标记  
12.2 文档支持  
12.2.1 相关文档  
以下文档包含关于使用 DLP7000UV 器件的更多信息:  
9. 相关文档  
文档标题  
文档链接  
《适用于 DLP Discovery 4100 芯片组的 DLPC410 数字控制器产品说明书》  
DLPA200 DMD 微镜驱动器产品说明书》  
DLPS024  
DLPS015  
DLPS027  
《适用于 DLP Discovery 4100 芯片组的 DLPR410 PROM 产品说明书》  
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12.3 相关链接  
下面的表格列出了快速访问链接。类别包括技术文档、支持与社区资源、工具和软件,以及申请样片或购买产品的  
快速链接。  
10. 相关链接  
器件  
产品文件夹  
请单击此处  
请单击此处  
请单击此处  
请单击此处  
样片与购买  
请单击此处  
请单击此处  
请单击此处  
请单击此处  
技术文档  
请单击此处  
请单击此处  
请单击此处  
请单击此处  
工具和软件  
请单击此处  
请单击此处  
请单击此处  
请单击此处  
支持和社区  
请单击此处  
请单击此处  
请单击此处  
请单击此处  
DLP7000UV  
DLPA200  
DLPC410  
DLPR410  
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www.ti.com.cn  
ZHCSE66D MAY 2015REVISED MAY 2017  
12.4 社区资源  
下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商按照原样提供。这些内容并不构成 TI 技术规范,  
并且不一定反映 TI 的观点;请参阅 TI 《使用条款》。  
TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在  
e2e.ti.com 中,您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。  
设计支持  
TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。  
12.5 商标  
Discovery, E2E are trademarks of Texas Instruments.  
DLP is a registered trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
12.6 静电放电警告  
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损  
伤。  
12.7 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
13 机械、封装和可订购信息  
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。这些数据如有变更,恕不另行通知  
和修订此文档。如欲获取此产品说明书的浏览器版本,请参阅左侧的导航。  
版权 © 2015–2017, Texas Instruments Incorporated  
47  
PACKAGE OPTION ADDENDUM  
www.ti.com  
16-Dec-2022  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
DLP7000UVFLP  
ACTIVE  
CLGA  
FLP  
203  
18  
RoHS & Green  
NI-PD-AU  
N / A for Pkg Type  
20 to 30  
Samples  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
重要声明和免责声明  
TI“按原样提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,  
不保证没有瑕疵且不做出任何明示或暗示的担保,包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担  
保。  
这些资源可供使用 TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任:(1) 针对您的应用选择合适的 TI 产品,(2) 设计、验  
证并测试您的应用,(3) 确保您的应用满足相应标准以及任何其他功能安全、信息安全、监管或其他要求。  
这些资源如有变更,恕不另行通知。TI 授权您仅可将这些资源用于研发本资源所述的 TI 产品的应用。严禁对这些资源进行其他复制或展示。  
您无权使用任何其他 TI 知识产权或任何第三方知识产权。您应全额赔偿因在这些资源的使用中对 TI 及其代表造成的任何索赔、损害、成  
本、损失和债务,TI 对此概不负责。  
TI 提供的产品受 TI 的销售条款ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI 提供这些资源并不会扩展或以其他方式更改  
TI 针对 TI 产品发布的适用的担保或担保免责声明。  
TI 反对并拒绝您可能提出的任何其他或不同的条款。IMPORTANT NOTICE  
邮寄地址:Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2022,德州仪器 (TI) 公司  

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