DRV5012AEDMRT [TI]
低功耗（低至 3.3μA）、低电压（最高 5.5V）霍尔效应锁存器 | DMR | 4 | -40 to 85;
| 型号： | DRV5012AEDMRT |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 低功耗（低至 3.3μA）、低电压（最高 5.5V）霍尔效应锁存器 | DMR | 4 | -40 to 85 锁存器 传感器 换能器 |
| 文件： | 总26页 (文件大小：1795K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DRV5012
ZHCSGS0 –AUGUST 2017
DRV5012 超低功耗数字锁存器霍尔效应传感器
1 特性
3 说明
1
•
•
行业领先的低功耗特性
可通过引脚选择的采样率：
DRV5012 器件是可通过引脚选择采样率的超低功耗数
字锁存器霍尔效应传感器。
–
–
SEL = 低电平：使用 1.3µA (1.8V) 时为 20Hz
当南磁极靠近封装顶部并且超出 BOP 阈值时，该器件
会驱动低电压。输出会保持低电平，直到应用北极并且
超出 BRP 阈值，这将使输出驱动高电压。必须交换北
极和南极才能切换输出，且集成的磁滞会分开 BOP 和
SEL = 高电平：使用 142µA (1.8V) 时为
2.5kHz
•
•
•
•
•
•
V
CC 工作电压范围为 1.65V 至 5.5V
高磁性灵敏度：±2mT（典型值）
可靠磁滞：4mT（典型值）
推挽式 CMOS 输出
BRP 以提供可靠切换。
通过使用内部振荡器，DRV5012 器件对磁场进行采
样，并根据 SEL 引脚以 20Hz 或 2.5kHz 的速率更新
输出。这种双带宽特性可让系统在使用最小功率的情况
下监控移动变化。
小型纤薄 X2SON 封装
运行温度范围：–40°C 至 +85°C
2 应用
此器件通过 1.65V 至 5.5V 的 VCC 工作，并采用小型
X2SON 封装。
•
•
无刷直流电机传感器
增量旋转编码：
器件信息(1)
–
–
–
–
–
电机速度
机械行程
流体测量
旋钮转动
轮速
器件型号
DRV5012
封装
X2SON (4)
封装尺寸（标称值）
1.10mm × 1.40mm
(1) 如需了解所有可用封装，请参阅产品说明书末尾的可订购产品
附录。
•
•
•
•
便携式医疗设备
电子锁、电动自行车、电动百叶窗
流量计
非接触式激活
20Hz 模式下的电流消耗
典型原理图
3
VCC
S
N
N
S
DRV5012
Controller
2.5
2
VCC
N
S
S
N
OUT
GPIO
GPIO
SEL
GND
1.5
1
Copyright © 2017, Texas Instruments Incorporated
1.65 V
3 V
0.5
5.5 V
0
-40
-10
20
50
80
Temperature (èC)
D016
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLVSDD5
DRV5012
ZHCSGS0 –AUGUST 2017
www.ti.com.cn
目录
7.4 Device Functional Modes........................................ 10
Application and Implementation ........................ 11
8.1 Application Information............................................ 11
8.2 Typical Applications ............................................... 11
8.3 Do's and Don'ts....................................................... 15
Power Supply Recommendations...................... 16
1
2
3
4
5
6
特性.......................................................................... 1
8
9
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 3
6.1 Absolute Maximum Ratings ...................................... 3
6.2 ESD Ratings ............................................................ 3
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 5
6.6 Magnetic Characteristics........................................... 5
6.7 Typical Characteristics.............................................. 6
Detailed Description .............................................. 7
7.1 Overview ................................................................... 7
7.2 Functional Block Diagram ......................................... 7
7.3 Feature Description................................................... 7
10 Layout................................................................... 16
10.1 Layout Guidelines ................................................. 16
10.2 Layout Example .................................................... 16
11 器件和文档支持 ..................................................... 17
11.1 器件支持................................................................ 17
11.2 接收文档更新通知 ................................................. 17
11.3 社区资源................................................................ 17
11.4 商标....................................................................... 17
11.5 静电放电警告......................................................... 17
11.6 Glossary................................................................ 17
12 机械、封装和可订购信息....................................... 17
7
4 修订历史记录
注：之前版本的页码可能与当前版本有所不同。
日期
修订版本
说明
2017 年 8 月
*
初始发行版。
2
Copyright © 2017, Texas Instruments Incorporated
DRV5012
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5 Pin Configuration and Functions
DMR Package
4-Pin X2SON With Exposed Thermal Pad
Top View
VCC
1
SEL
4
Thermal
Pad
2
3
GND OUT
Pin Functions
PIN
I/O
DESCRIPTION
NAME
GND
OUT
SEL
NO.
2
—
O
I
Ground reference
Push-pull CMOS output. Drives a VCC or ground level.
3
4
CMOS input that selects the sampling rate: a low voltage sets 20 Hz; a high voltage sets 2.5 kHz.
1.65-V to 5.5-V power supply. TI recommends connecting this pin to a ceramic capacitor to ground
with a value of at least 0.1 µF.
VCC
1
—
—
Thermal
Pad
No-connect. This pin should be left floating or tied to ground. It should be soldered to the board for
mechanical support.
PAD
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
V
Power supply voltage
Power supply voltage slew rate
Output voltage
VCC
VCC
OUT
OUT
SEL
–0.3
5.5
Unlimited
V / µs
V
–0.3
–5
VCC + 0.3
5
Output current
mA
V
Input voltage
–0.3
VCC + 0.3
Magnetic flux density, BMAX
Junction temperature, TJ
Storage temperature, Tstg
Unlimited
T
105
150
°C
–65
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±6000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Copyright © 2017, Texas Instruments Incorporated
3
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6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
1.65
0
MAX
5.5
VCC
5
UNIT
V
VCC
VO
IO
Power supply voltage (VCC)
Output voltage (OUT)
V
Output current (OUT)
–5
mA
V
VI
Input voltage (SEL)
0
VCC
85
TA
Operating ambient temperature
–40
°C
6.4 Thermal Information
DRV5012
THERMAL METRIC(1)
DMR (X2SON)
UNIT
4 PINS
159
77
RθJA
RθJC(top)
RθJB
ψJT
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
102
0.9
Junction-to-top characterization parameter
Junction-to-board characterization parameter
ψJB
100
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
4
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6.5 Electrical Characteristics
for VCC = 1.65 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OUT pin
VOH
High-level output voltage
Low-level output voltage
IOUT = –1 mA
VCC – 0.35 VCC – 0.1
0.1
V
V
VOL
IOUT = 1 mA
0.3
SEL pin
VCC = 1.65 to 2.5 V
VCC = 2.5 to 5.5 V
0.8 × VCC
2
VIH
High-level input voltage
V
VIL
IIH
IIL
Low-level input voltage
0.15 × VCC
V
High-level input leakage current
Low-level input leakage current
SEL = VCC
SEL = 0 V
1
1
nA
nA
DYNAMIC CHARACTERISTICS
SEL = Low
SEL = High
SEL = Low
SEL = High
13.3
1665
27
20
2500
50
37
4700
75
fS Frequency of magnetic sampling
Hz
ms
tS
Period of magnetic sampling
0.21
0.4
1.3
142
1.6
153
2
0.6
SEL = Low
SEL = High
SEL = Low
SEL = High
SEL = Low
SEL = High
VCC = 1.8 V
VCC = 3 V
VCC = 5 V
3.3
ICC(AVG) Average current consumption
µA
370
160
2
ICC(PK)
tON
Peak current consumption
2.7
mA
µs
Power-on time (see 图 11)
55
100
tACTIVE Active time period (see 图 11)
40
µs
6.6 Magnetic Characteristics
for VCC = 1.65 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Magnetic threshold operate point
(see 图 9)
BOP
0.6
2
3.3
mT
Magnetic threshold release point
(see 图 9)
BRP
–3.3
2
–2
4
–0.6
mT
mT
BHYS
Magnetic hysteresis: |BOP – BRP|
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6.7 Typical Characteristics
180
170
160
150
140
130
3
2.5
2
1.65 V
3 V
5.5 V
1.5
1
1.65 V
3 V
5.5 V
0.5
0
-40
-10
20
50
80
-40
-10
20
50
80
Temperature (èC)
Temperature (èC)
D016
D001
图 1. ICC(AVG) vs Temperature (20-Hz Mode)
图 2. ICC(AVG) vs Temperature (2.5-kHz Mode)
5
4
3
2
1
0
0
-1
-2
-3
-4
-5
-40
-10
20
50
80
-40
-10
20
50
80
Temperature (èC)
Temperature (èC)
D002
D003
图 3. BOP vs Temperature
图 4. BRP vs Temperature
5
4
3
2
1
0
0
-1
-2
-3
-4
-5
1.5
2.5
3.5
4.5
5.5
1.5
2.5
3.5
4.5
5.5
Supply Voltage (V)
Supply Voltage (V)
D004
D005
图 5. BOP vs VCC
图 6. BRP vs VCC
6
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ZHCSGS0 –AUGUST 2017
7 Detailed Description
7.1 Overview
The DRV5012 device is a magnetic sensor with a digital output that latches the most recent pole measured.
Applying a south magnetic pole near the top of the package causes the output to drive low, a north pole causes
the output to drive high, and the absence of a magnetic field causes the output to continue to drive the previous
state, whether low or high.
The device integrates a Hall effect element, analog signal conditioning, and a low-frequency oscillator that
enables ultra-low average power consumption. By operating from a 1.65-V to 5.5-V supply, the device
periodically measures magnetic flux density, updates the output, and enters a low-power sleep state. A logic
input pin, SEL, sets the sampling frequency to 20 Hz or 2.5 kHz with a tradeoff in power consumption.
7.2 Functional Block Diagram
0.1 ꢀF
(min)
SEL
VCC
Ultra-low-power
Oscillator
Voltage
Regulator
REF
VCC
Element Bias
Output
Control
Offset
Cancellation
Amp
OUT
Temperature
Compensation
GND
Copyright © 2017, Texas Instruments Incorporated
7.3 Feature Description
7.3.1 Magnetic Flux Direction
The DRV5012 device is sensitive to the magnetic field component that is perpendicular to the top of the package
(as shown in 图 7).
B
PCB
图 7. Direction of Sensitivity
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Feature Description (接下页)
Magnetic flux that travels from the bottom to the top of the package is considered positive in this data sheet. This
condition exists when a south magnetic pole is near the top of the package. Magnetic flux that travels from the
top to the bottom of the package results in negative millitesla values.
positive B
negative B
N
S
S
N
PCB
PCB
图 8. Flux Direction Polarity
7.3.2 Magnetic Response
图 9 shows the device functionality and hysteresis.
OUT
VCC
BHYS
0V
B
BRP
BOP
north
0 mT
south
图 9. Device Functionality
8
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Feature Description (接下页)
7.3.3 Output Driver
The device features a push-pull CMOS output that can drive a VCC or ground level.
VCC
Output
Output
Control
图 10. Push-Pull Output (Simplified)
7.3.4 Sampling Rate
When the DRV5012 device powers up, it measures the first magnetic sample and sets the output within the tON
time. The output is latched, and the device enters an ultra-low-power sleep state. After each tS time has passed,
the device measures a new sample and updates the output if necessary. If the magnetic field does not change
between periods, the output also does not change.
VCC
1.65 V
tON
time
tACTIVE
tS
tS
ICC
ICC(PK)
time
Output
VCC
2nd sample
3rd sample
Invalid
1st sample
GND
time
图 11. Timing Diagram
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Feature Description (接下页)
7.3.5 SEL Pin
The SEL pin is a CMOS input that selects between two sampling rates. When the pin is low, the device samples
at 20 Hz and uses low power. When the pin is high, the device samples at 2500 Hz and uses more power. The
SEL pin can be tied directly high or low, or it can be changed during device operation. If the SEL voltage
changes, the device detects the new voltage during the next tACTIVE time.
7.3.6 Hall Element Location
The sensing element inside the device is in the center of the package when viewed from the top. 图 12 shows
the tolerances and side-view dimensions.
X2SON
Top View
X2SON
Side View
centered
±60 µm
250 µm
±50 µm
图 12. Hall Element Location
7.4 Device Functional Modes
The DRV5012 device has two operating modes, 20 Hz and 2.5 kHz, as set by the SEL pin. In both cases the
Recommended Operating Conditions must be met.
10
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8 Application and Implementation
注
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV5012 device is typically used in rotary applications for brushless DC (BLDC) motor sensors or
incremental rotary encoding.
To ensure reliable functionality, the magnet should apply a flux density at the sensor greater than the maximum
BOP and less than the minimum BRP thresholds. It is good practice to add additional margin to account for
mechanical tolerance, temperature effects, and magnet variation.
8.2 Typical Applications
8.2.1 BLDC Motor Sensors Application
VBAT
VBAT
DRV5012
PWM
DRV5012
DRV5012
GPIOs
Microcontroller
6 Gate Drivers
& MOSFETs
M
3
Outputs
SEL control
GPIOs
GPIO
Copyright © 2017, Texas Instruments Incorporated
图 13. BLDC Motor System
8.2.1.1 Design Requirements
For this design example, use the parameters listed in 表 1.
表 1. Design Parameters
DESIGN PARAMETER
Number of motor phases
EXAMPLE VALUE
3
3000
Motor RPM
Number of magnet poles on the rotor
Magnetic material
6
Bonded Neodymium
±15 mT
Peak magnetic flux density at the Hall sensors
Battery voltage range (VBAT
)
2 to 3.5 V
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8.2.1.2 Detailed Design Procedure
Three-phase brushless DC motors often use 3 Hall effect latch devices to measure the electrical angle of the
rotor and tell the controller how to drive the 3 wires. These wires connect to electromagnet windings, which
generate magnetic fields that apply forces to the permanent magnets on the rotor.
The 3 Hall sensors should be spaced across the printed-circuit board (PCB) so that they are 120° electrical
degrees apart. This configuration creates six 3-bit states with equal time duration for each electrical cycle, which
consists of 1 north and 1 south magnetic pole. From the center of the motor axis, the number of degrees each
sensor should be spaced equals 2 / [number of poles] × 120°. In this design example, 1 sensor is placed at 0°,
1 sensor is placed 40° rotated, and 1 sensor is placed 80° rotated. Alternatively, a 3× degree offset can be
added or subtracted to any sensor, meaning the third sensor could alternatively be placed at
80° – (3 × 40°) = –40°.
While an ideal BLDC motor would energize the phases at the exact correct times, the DRV5012 device
introduces variable lag because of the sampling architecture that achieves low power. An acceptable amount of
lag can be measured by the sampling time error as a percentage of the electrical period. This design example
uses 3000 RPM, which is 50 revolutions per second. Each revolution has 6 poles (3 electrical cycles), so the
electrical frequency is 150 Hz, a period of 6.7 ms. The DRV5012 device in 2.5 kHz mode has a sampling period
of 0.4 ms, which is 6% of the electrical period. Generally, the maximum timing error should be kept under 10% to
ensure the BLDC motor spins, and timing error can reduce motor efficiency.
When the motor in this example is not driven, the SEL pins of the DRV5012 devices are set to a low voltage, and
the sensor outputs are monitored for changes. If a change occurs, the microcontroller wakes the system into a
higher power state and takes other appropriate action.
8.2.1.3 Application Curve
U
Phase
V
Voltages
W
Hall 1
DRV5012
Hall 2
Outputs
Hall 3
Electrical Angle
0°
0°
120°
240°
360°
120°
Mechanical Angle
60°
.
图 14. 3-Phase BLDC Motor Phase Voltages and Hall Signals
12
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8.2.2 Incremental Rotary Encoding Application
VCC
VCC
DRV5012
Controller
VCC
OUT
GPIO
GPIO
GPIO
SEL
GND
S
N
VCC
N
S
DRV5012
VCC
OUT
SEL
GND
Copyright © 2017, Texas Instruments Incorporated
图 15. Incremental Rotary Encoding System
8.2.2.1 Design Requirements
For this design example, use the parameters listed in 表 2.
表 2. Design Parameters
DESIGN PARAMETER
RPM range
EXAMPLE VALUE
0 to 4000
8
Number of magnet poles
Magnetic material
Ferrite
Air gap above the Hall sensors
Peak magnetic flux density at the sensors
2.5 mm
±7 mT
8.2.2.2 Detailed Design Procedure
Incremental encoders are used on knobs, wheels, motors, and flow meters to measure relative rotary movement.
By attaching a ring magnet to the rotating component and placing a DRV5012 device nearby, the sensor
generates voltage pulses as the magnet turns. If directional information is also needed (clockwise versus
counterclockwise), a second DRV5012 device can be added with a phase offset, and then the order of transitions
between the two signals describes the direction.
Creating this phase offset requires spacing the two sensors apart on the PCB, and an ideal 90° quadrature offset
is attained when the sensors are separated by half the length of each magnet pole, plus any integer number of
pole lengths. 图 15 shows this configuration, as the sensors are 1.5 pole lengths apart. One of the sensors
changes its output every 360° / 8 poles / 2 sensors = 22.5° of rotation. For reference, the TI Design TIDA-00480
uses a 66-pole magnet with changes every 2.7°.
Because the DRV5012 device periodically samples the magnetic field, there is a limit to the maximum rotational
speed that can be measured. Generally, the device sampling rate should be faster than 2 times the number of
poles per second. In this design example, the maximum speed is 4000 RPM, which involves 533 poles per
second. The DRV5012 has a minimum sampling frequency of 1665 Hz (when the SEL pin is high), which is
approximately 3 × 533 poles per second.
In systems where the sensor sampling rate is close to 2 times the number of poles per second, most of the
samples will measure a magnetic field that is significantly lower than the peak value, since the peaks only occur
when the sensor and pole are perfectly aligned. In this case, margin should be added by applying a stronger
magnetic field that has peaks significantly higher than the maximum BOP of the DRV5012 device.
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8.2.2.3 Application Curve
Two signals in quadrature provide movement and direction information. Each 2-bit state has unique adjacent
2-bit states for clockwise and counterclockwise.
Voltage
Sensor 1
Sensor 2
time
图 16. 2-bit Quadrature Output
14
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ZHCSGS0 –AUGUST 2017
8.3 Do's and Don'ts
Because the Hall element is sensitive to magnetic fields that are perpendicular to the top of the package, a
correct magnet orientation must be used for the sensor to detect the field. 图 17 shows correct and incorrect
orientations when using a ring magnet.
CORRECT
N
S
N
N
S
S
N
S
S
N
N
S
INCORRECT
S
N
N
S
图 17. Correct and Incorrect Magnet Orientations
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9 Power Supply Recommendations
The DRV5012 device is powered from 1.65-V to 5.5-V DC power supplies. A decoupling capacitor close to the
device must be used to provide local energy with minimal inductance. TI recommends using a ceramic capacitor
with a value of at least 0.1 µF.
10 Layout
10.1 Layout Guidelines
Magnetic fields pass through most nonferromagnetic materials with no significant disturbance. Embedding Hall
effect sensors within plastic or aluminum enclosures and sensing magnets on the outside is common practice.
Magnetic fields also easily pass through most PCBs, which makes placing the magnet on the opposite side
possible.
10.2 Layout Example
VCC
SEL
Thermal
Pad
GND OUT
图 18. Layout Example
16
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11 器件和文档支持
11.1 器件支持
11.1.1 开发支持
有关其他设计参考，请参阅汽车霍尔传感器旋转编码器 TI 设计 (TIDA-00480)。
11.2 接收文档更新通知
要接收文档更新通知，请导航至 TI.com 上的器件产品文件夹。单击右上角的通知我 进行注册，即可每周接收产品
信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
11.3 社区资源
下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范，
并且不一定反映 TI 的观点；请参阅 TI 的 《使用条款》。
TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在
e2e.ti.com 中，您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。
设计支持
TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。
11.4 商标
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损
伤。
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。这些数据如有变更，恕不另行通知
和修订此文档。如欲获取此产品说明书的浏览器版本，请参阅左侧的导航。
版权 © 2017, Texas Instruments Incorporated
17
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
DRV5012AEDMRR
DRV5012AEDMRT
ACTIVE
ACTIVE
X2SON
X2SON
DMR
DMR
4
4
3000 RoHS & Green
250 RoHS & Green
SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 85
-40 to 85
2AE
2AE
SN
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2021
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
DRV5012AEDMRR
DRV5012AEDMRT
X2SON
X2SON
DMR
DMR
4
4
3000
250
179.0
180.0
8.4
8.4
1.27
1.27
1.57
1.57
0.5
0.5
4.0
4.0
8.0
8.0
Q1
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2021
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
DRV5012AEDMRR
DRV5012AEDMRT
X2SON
X2SON
DMR
DMR
4
4
3000
250
200.0
200.0
183.0
183.0
25.0
25.0
Pack Materials-Page 2
GENERIC PACKAGE VIEW
DMR 4
1.1 x 1.4, 0.5 mm pitch
X2SON - 0.4 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4229480/A
www.ti.com
PACKAGE OUTLINE
DMR0004A
X2SON - 0.4 mm max height
SCALE 9.000
PLASTIC SMALL OUTLINE - NO LEAD
1.15
1.05
A
B
PIN 1 INDEX AREA
1.45
1.35
(0.13) TYP
C
0.4 MAX
SEATING PLANE
0.08 C
NOTE 4
0.05
0.00
2X 0.5
SYMM
2
3
NOTE 4
EXPOSED
THERMAL PAD
5
SYMM
0.6 0.1
0.25
0.15
4X
PIN 1 ID
(OPTIONAL)
4
1
0.27
0.17
4X
0.8 0.1
0.1
C B
C
A
0.05
4222825/B 05/2022
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
4. Quantity and shape of side wall metal may vary.
www.ti.com
EXAMPLE BOARD LAYOUT
DMR0004A
X2SON - 0.4 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
2X (0.5)
4X (0.22)
4X (0.4)
(R0.05) TYP
1
4
5
SYMM
(1.4)
(0.6)
(
0.2) VIA
2
3
SYMM
(0.8)
LAND PATTERN EXAMPLE
SCALE:35X
0.05 MAX
ALL AROUND
0.05 MIN
ALL AROUND
METAL
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4222825/B 05/2022
NOTES: (continued)
5. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
6. Vias are optional depending on application, refer to device data sheet. If all or some are implemented, recommended via locations are shown.
It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
DMR0004A
X2SON - 0.4 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
2X (0.5)
4X (0.22)
4X (0.4)
(R0.05) TYP
1
4
5
SYMM
(1.4)
(0.57)
METAL
TYP
2
3
SYMM
(0.76)
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
EXPOSED PAD 5:
90% PRINTED SOLDER COVERAGE BY AREA
SCALE:50X
4222825/B 05/2022
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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