DRV8316CRRGFR [TI]
具有集成电流检测功能、最大电压为 40V、峰值电流为 8A 的三相电机驱动器 | RGF | 40 | -40 to 125;型号: | DRV8316CRRGFR |
厂家: | TEXAS INSTRUMENTS |
描述: | 具有集成电流检测功能、最大电压为 40V、峰值电流为 8A 的三相电机驱动器 | RGF | 40 | -40 to 125 电机 驱动 驱动器 |
文件: | 总94页 (文件大小:4060K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DRV8316C
ZHCSR87 –DECEMBER 2022
DRV8316C 三相集成式FET 电机驱动器
1 特性
3 说明
• 的三相BLDC 电机驱动器
DRV8316C 集成了三个 H 桥,具有40V 的绝对最大电
压和 95mΩ 的超低 RDS(ON)(高侧 + 低侧),可为
12V/24V 无刷直流电机提供高功率驱动能力。
DRV8316C 提供集成电流检测功能,无需再使用外部
检测电阻。DRV8316C 集成了电源管理电路,包括可
用于为外部电路供电的电压可调节降压稳压器
(3.3V/5V,200mA)和LDO (3.3V/30mA)。
– 逐周期电流限制,可限制相位电流
– 支持高达200kHz 的PWM 频率
– 主动消磁支持减少功率损耗
• 4.5V 至35V 工作电压(绝对最大值40V)
• 高输出电流能力:8A 峰值
• 低MOSFET 导通状态电阻
– TA = 25°C 时,RDS(ON) (HS + LS) 为95 mΩ
• 低功耗睡眠模式
DRV8316C 提供了可配置的 6x 或 3x PWM 控制方
案,可用于使用外部微控制器实施有传感器或无传感器
磁场定向控制 (FOC) 、正弦控制或梯形控制。
DRV8316C 能够驱动高达 200kHz 的 PWM 频率。
DRV8316C 可通过 SPI (DRV8316CR) 或引脚
(DRV8316CT) 进行高度配置。PWM 模式、压摆率、
OCP 电平、电流检测增益是部分可配置的特性。
– 1.5 µA(VVM = 24V,TA = 25°C)
• 多种控制接口选项
– 6x PWM 控制接口
– 3x PWM 控制接口
– 具有逐周期电流限制的6x PWM 控制接口
– 具有逐周期电流限制的3x PWM 控制接口
• 不需要外部电流感测电阻器,内置电流感测功能
• 灵活的器件配置选项
DRV8316C 集成了多种保护特性,包括电源欠压锁定
(UVLO)、过压保护 (OVP)、电荷泵欠压 (CPUV)、过
流保护 (OCP) 、过热警告 (OTW) 和过热关断
(OTSD),目的是在出现故障事件时保护器件、电机和
系统。故障状态通过nFAULT 引脚指示。
– DRV8316CR:用于器件配置和故障状态的5
MHz 16 位SPI 接口
– DRV8316CT:基于硬件引脚的配置
• 支持1.8V、3.3V 和5V 逻辑输入
• 内置3.3V (5%)、30mA LDO 稳压器
• 内置3.3V/5V、200mA 降压稳压器
• 内置3.3V、30mA LDO
有关器件使用的设计考虑因素和建议, 请参考
Application Information。
器件信息(1)
器件型号
封装
封装尺寸(标称值)
7.00mm x 5.00mm
7.00mm x 5.00mm
• 延迟补偿减少占空比失真
• 整套集成保护特性
DRV8316CR
DRV8316CT
VQFN (40)
VQFN (40)
– 电源欠压锁定(UVLO)
– 电荷泵欠压(CPUV)
– 过流保护(OCP)
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
– 热警告和热关断(OTW/OTSD)
– 故障条件指示引脚(nFAULT)
– 可选择通过SPI 接口进行故障诊断
LDO out
3.3-V, up to 30-mA
4.5V to 35V (40V abs max)
Buck out
3.3 or 5.0 V, up to 200mA
6x / 3x PWM
PWM input
MCU
DRV8316C
A
B
C
nSLEEP
Charge Pump
2 应用
DRVOFF
Built-in Protec on
• CPAP 呼吸机
• 无刷直流(BLDC) 电机模块
• 打印机
• 云台相机
• HVAC 电机
• 小型家用电器
• 办公自动化设备
• 工厂自动化和机器人
CSA out
nFAULT
Buck/LDO Regulator
Integrated Current Sensing
8-A peak output current,
typically 12-V/24-V,
<80W motors
SPI
Only on SPI
variant
简化原理图
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SLVSH07
DRV8316C
ZHCSR87 –DECEMBER 2022
www.ti.com.cn
Table of Contents
8.5 SPI Communication.................................................. 55
8.6 Register Map.............................................................58
9 Application and Implementation..................................70
9.1 Application Information............................................. 70
9.2 Typical Applications.................................................. 71
10 Power Supply Recommendations..............................83
10.1 Bulk Capacitance....................................................83
11 Layout...........................................................................84
11.1 Layout Guidelines................................................... 84
11.2 Layout Example...................................................... 85
11.3 Thermal Considerations..........................................86
12 Device and Documentation Support..........................87
12.1 Documentation Support.......................................... 87
12.2 支持资源..................................................................87
12.3 Trademarks.............................................................87
12.4 Electrostatic Discharge Caution..............................87
12.5 术语表..................................................................... 87
13 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Device Comparison Table ..............................................3
6 Pin Configuration and Functions...................................4
7 Specifications.................................................................. 6
7.1 Absolute Maximum Ratings........................................ 6
7.2 ESD Ratings............................................................... 6
7.3 Recommended Operating Conditions.........................6
7.4 Thermal Information....................................................7
7.5 Electrical Characteristics.............................................7
7.6 SPI Timing Requirements......................................... 14
7.7 SPI Slave Mode Timings...........................................15
7.8 Typical Characteristics..............................................15
8 Detailed Description......................................................16
8.1 Overview...................................................................16
8.2 Functional Block Diagram.........................................17
8.3 Feature Description...................................................19
8.4 Device Functional Modes..........................................54
Information.................................................................... 87
4 Revision History
DATE
REVISION
NOTES
December 2022
*
Initial release.
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5 Device Comparison Table
DEVICE
PACKAGES
INTERFACE
SPI
BUCK REGULATOR
DRV8316CR
40-pin VQFN (7x5 mm)
Yes
DRV8316CT
Hardware (Pin)
表5-1. DRV8316CR (SPI variant) vs. DRV8316CT (Hardware variant) configuration comparison
Parameters
DRV8316CR (SPI variant)
PWM_MODE (4 settings)
SLEW (4 settings)
DRV8316CT (Hardware variant)
MODE pin (4 settings)
SLEW pin (4 settings)
GAIN pin (4 settings)
Push-Pull mode
PWM mode
Slew rate
CSA gain
CSA_GAIN (4 settings)
SDO_MODE (2 settings)
DRV_OFF (2 settings)
OCP_LVL (2 settings)
OCP_MODE (4 settings)
OCP_RETRY (2 settings)
OVP_EN (2 settings)
SDO pin configuration
DRVOFF pin configuration
OCP level
Enabled
OCP/SR pin (2 settings)
Latched fault
OCP mode
OCP retry time
N/A since OCP mode is latched fault
Enabled
Overvoltage protection (OVP)
OVP threshold
OVP_SEL (2 settings)
34-V
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6 Pin Configuration and Functions
32
31
30
29
28
27
26
25
24
23
22
21
INLC
NC
AGND
FB_BK
GND_BK
SW_BK
CPL
1
2
32
31
30
29
28
27
26
25
24
23
22
21
INLC
NC
AGND
FB_BK
GND_BK
SW_BK
CPL
1
2
INHC
INHC
3
INLB
3
INLB
4
INHB
4
INHB
5
INLA
5
INLA
6
INHA
6
INHA
Thermal Pad
Thermal Pad
CPH
7
AGND
AVDD
NC
CPH
7
AGND
AVDD
VSEL_BK
nSLEEP
nFAULT
DRVOFF
CP
8
CP
8
VM
9
VM
9
VM
10
11
12
nSLEEP
nFAULT
DRVOFF
VM
10
11
12
VM
VM
PGND
PGND
图6-1. DRV8316CR 40-Pin VQFN With Exposed
图6-2. DRV8316CT 40-Pin VQFN With Exposed
Thermal Pad Top View
Thermal Pad Top View
表6-1. Pin Functions
PIN
40-pin Package
TYPE(1)
DESCRIPTION
NAME
DRV8316CR
DRV8316CT
AGND
2, 26
2, 26
GND
Device analog ground. Refer 节11.1 for connections recommendation.
3.3-V internal regulator output. Connect an X5R or X7R, 1-µF, 6.3-V ceramic
AVDD
CP
25
25
8
PWR O capacitor between the AVDD and AGND pins. This regulator can source up to
30 mA externally.
Charge pump output. Connect a X5R or X7R, 1-µF, 16-V ceramic capacitor
8
PWR O
between the CP and VM pins.
CPH
CPL
7
6
7
6
PWR
PWR
Charge pump switching node. Connect a X5R or X7R, 47-nF, ceramic
capacitor between the CPH and CPL pins. TI recommends a capacitor voltage
rating at least twice the normal operating voltage of the device.
When this pin is pulled high the six MOSFETs in the power stage are turned
OFF making all outputs Hi-Z.
DRVOFF
FB_BK
21
3
21
3
I
Feedback for buck regulator. Connect to buck regulator output after the
inductor/resistor.
PWR I
GAIN
36
4
I
Amplifier gain setting. The pin is a 4-level input pin set by an external resistor.
—
GND_BK
4
GND
Buck regulator ground. Refer 节11.1 for connections recommendation.
High-side driver control input for OUTA. This pin controls the output of the
high-side MOSFET.
INHA
INHB
INHC
INLA
27
29
31
28
27
29
31
28
I
I
I
I
High-side driver control input for OUTB. This pin controls the output of the
high-side MOSFET.
High-side driver control input for OUTC. This pin controls the output of the
high-side MOSFET.
Low-side driver control input for OUTA. This pin controls the output of the low-
side MOSFET.
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表6-1. Pin Functions (continued)
PIN
40-pin Package
TYPE(1)
DESCRIPTION
NAME
DRV8316CR
DRV8316CT
Low-side driver control input for OUTB. This pin controls the output of the low-
side MOSFET.
INLB
INLC
30
32
30
I
I
Low-side driver control input for OUTC. This pin controls the output of the low-
side MOSFET.
32
PWM input mode setting. This pin is a 4-level input pin set by an external
resistor.
MODE
NC
33
1
I
—
1, 24
No connection, open
—
Fault indicator. Pulled logic-low with fault condition; Open-drain output requires
an external pull-up resistor to 1.8 V to 5.0 V. If external supply is used to pull
up nFAULT, ensure that it is pulled to >2.2 V on power up or the device will
enter test mode
nFAULT
22
22
O
Serial chip select. A logic low on this pin enables serial interface
communication.
nSCS
36
23
—
I
I
I
—
23
35
Driver nSLEEP. When this pin is logic low, the device goes into a low-power
sleep mode. A 20 to 40-µs low pulse can be used to reset fault conditions
without entering sleep mode.
nSLEEP
OCP/SR
OCP level and Synchronous Rectification (Active Demagnetization) setting.
This pin is a 4-level input pin set by an external resistor.
OUTA
OUTB
OUTC
PGND
13, 14
16, 17
13, 14
16, 17
PWR O Half bridge output A
PWR O Half bridge output B
PWR O Half bridge output C
19, 20
19, 20
12, 15, 18
12, 15, 18
GND
I
Device power ground. Refer 节11.1 for connections recommendation.
Serial clock input. Serial data is shifted out and captured on the corresponding
rising and falling edge on this pin (SPI devices).
SCLK
SDI
35
34
33
—
—
—
34
40
39
Serial data input. Data is captured on the falling edge of the SCLK pin (SPI
devices).
I
Serial data output. Data is shifted out on the rising edge of the SCLK pin. This
pin requires an external pullup resistor (SPI devices).
SDO
SLEW
SOA
SOB
O
I
Slew rate control setting. This pin is a 4-level input pin set by an external
resistor.
—
40
39
Current sense amplifier output. Supports capacitive load or low pass filter
(resistor in series and capacitor to GND)
O
O
O
Current sense amplifier output. Supports capacitive load or low pass filter
(resistor in series and capacitor to GND)
Current sense amplifier output. Supports capacitive load or low pass filter
(resistor in series and capacitor to GND)
SOC
38
5
38
5
SW_BK
PWR O Buck switch node. Connect this pin to an inductor or resistor.
Power supply. Connect to motor supply voltage; bypass to PGND with two 0.1-
µF capacitors (for each pin) plus one bulk capacitor rated for VM. TI
PWR I
VM
9, 10, 11
9, 10, 11
24
recommends a capacitor voltage rating at least twice the normal operating
voltage of the device.
Buck output voltage setting. This pin is a 4-level input pin set by an external
resistor.
VSEL_BK
I
—
VREF in PWM Mode 1 and Mode 3: Current sense amplifier power supply
input and reference. Connect a X5R or X7R, 0.1-µF, 6.3-V ceramic capacitor
VREF/ILIM
37
37
PWR/I
GND
between the VREF and AGND pins.
ILIM in PWM Mode 2 and Mode 4: Sets the threshold for phase current used
in cycle by cycle current limit.
Thermal
pad
Must be connected to analog ground.
(1) I = input, O = output, GND = ground pin, PWR = power, NC = no connect
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7 Specifications
7.1 Absolute Maximum Ratings
over operating ambient temperature range (unless otherwise noted)(1)
MIN
MAX UNIT
Power supply pin voltage (VM)
40
4
V
V/µs
V
–0.3
Power supply voltage ramp (VM)
Voltage difference between ground pins (GND_BK, PGND, AGND)
Charge pump voltage (CPH, CP)
0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–1
VM + 6
VM + 0.3
5.75
V
Charge pump negative switching pin voltage (CPL)
Switching regulator pin voltage (FB_BK)
Switching node pin voltage (SW_BK)
Analog regulator pin voltage (AVDD)
Logic pin input voltage (DRVOFF, INHx, INLx, nSCS, nSLEEP, SCLK, SDI)
Logic pin output voltage (nFAULT, SDO)
Output pin voltage (OUTA, OUTB, OUTC)
Ambient temperature, TA
V
V
VM + 0.3
4
V
V
5.75
V
5.75
V
VM + 1
125
V
°C
°C
°C
–40
–40
–65
Junction temperature, TJ
150
Storage tempertaure, Tstg
150
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
7.2 ESD Ratings
VALUE
±2000
±500
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002(2)
Electrostatic
discharge
V(ESD)
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
MIN
NOM
MAX UNIT
VVM
fPWM
IOUT
Power supply voltage
VVM
4.5
24
35
200
8
V
kHz
A
Output PWM frequency
Peak output winding current
OUTA, OUTB, OUTC
OUTA, OUTB, OUTC
(1)
DRVOFF, INHx, INLx, nSCS, nSLEEP,
SCLK, SDI
VIN
Logic input voltage
5.5
V
–0.1
VOD
Open drain pullup voltage
Push-pull voltage
nFAULT, SDO
SDO
5.5
5.5
V
V
–0.1
VSDO
IOD
VVREF
TA
2.2
Open drain output current
Voltage reference pin voltage
Operating ambient temperature
Operating Junction temperature
nFAULT, SDO
VREF
5
mA
V
2.8
–40
–40
AVDD
125
150
°C
°C
TJ
(1) Power dissipation and thermal limits must be observed
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7.4 Thermal Information
DRV8316CR,
DRV8316CT
VQFN (RGF)
40 Pins
25.7
THERMAL METRIC(1)
UNIT
RθJA
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
15.2
7.3
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
0.2
ΨJT
7.2
ΨJB
RθJC(bot)
2.0
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Electrical Characteristics
TJ = –40°C to +150°C, VVM = 4.5 to 35 V (unless otherwise noted). Typical limits apply for TA = 25°C, VVM = 24 V
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
POWER SUPPLIES
VVM > 6 V, nSLEEP = 0, TA = 25 °C
nSLEEP = 0
1.5
2.5
2.5
5
µA
µA
IVMQ
VM sleep mode current
nSLEEP = 1, INHx = INLx = 0, SPI =
'OFF', BUCK_DIS = 1;
4
4
10 mA
VM standby mode current
(Buck regulator disabled)
IVMS
VVM > 6 V, nSLEEP = 1, INHx = INLx =
0, SPI = 'OFF', TA = 25 °C, BUCK_DIS =
1;
5
6
mA
mA
VVM > 6 V, nSLEEP = 1, INHx = INLx =
0, SPI = 'OFF', IBK = 0, TA = 25
°C, BUCK_DIS = 0;
5
VM standby mode current
(Buck regulator enabled)
IVMS
nSLEEP = 1, INHx = INLx = 0, SPI =
'OFF', IBK = 0, BUCK_DIS = 0;
6
10
18
11
17
10 mA
13 mA
21 mA
16 mA
25 mA
VVM > 6 V, nSLEEP = 1, fPWM = 25 kHz,
TA = 25 °C, BUCK_DIS = 1
VVM > 6 V, nSLEEP = 1, fPWM = 200 kHz,
TA = 25 °C, BUCK_DIS = 1
VM operating mode current
(Buck regulator disabled)
IVM
nSLEEP =1, fPWM = 25 kHz, BUCK_DIS
= 1
nSLEEP =1, fPWM = 200 kHz,
BUCK_DIS = 1
VVM > 6 V, nSLEEP = 1, fPWM = 25 kHz,
TA = 25 °C, BUCK_DIS =
0; BUCK_PS_DIS = 0
11
19
13 mA
22 mA
VVM > 6 V, nSLEEP = 1, fPWM = 200 kHz,
TA = 25 °C, BUCK_DIS =
VM operating mode current
(Buck regulator enabled)
IVM
0; BUCK_PS_DIS = 0
nSLEEP =1, fPWM = 25 kHz, BUCK_DIS
= 0; BUCK_PS_DIS = 0
12
18
17 mA
27 mA
nSLEEP =1, fPWM = 200 kHz,
BUCK_DIS = 0; BUCK_PS_DIS = 0
0 mA ≤IAVDD ≤30 mA; BUCK_PS_DIS
= 0
VAVDD
Analog regulator voltage
3.1
3.6
3.3
3.465
V
IAVDD
VVCP
External analog regulator load
Charge pump regulator voltage
30 mA
VCP with respect to VM
4.7
5.25
V
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TJ = –40°C to +150°C, VVM = 4.5 to 35 V (unless otherwise noted). Typical limits apply for TA = 25°C, VVM = 24 V
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
fCP
Charge pump switching frequency
400
kHz
VVM > VUVLO, nSLEEP = 1 to outputs
ready and nFAULT released
tWAKE
Wakeup time
1
ms
tSLEEP
tRST
Sleep Pulse time
Reset Pulse time
nSLEEP = 0 period to enter sleep mode
nSLEEP = 0 period to reset faults
120
20
µs
µs
40
BUCK REGULATOR
VVM > 6 V, 0 mA ≤IBK ≤200 mA,
BUCK_SEL = 00b
3.1
4.6
3.7
5.2
3.3
5.0
4.0
3.5
5.4
4.3
6.2
V
V
V
V
VVM > 6 V, 0 mA ≤IBK ≤200 mA,
BUCK_SEL = 01b
Buck regulator average voltage
VVM > 6 V, 0 mA ≤IBK ≤200 mA,
BUCK_SEL = 10b
VBK
VBK
VBK
(LBK = 47 µH, CBK = 22 µF)
(SPI Device)
VVM > 6.7 V, 0 mA ≤IBK ≤200 mA,
BUCK_SEL = 11b
5.7
VVM < 6.0 V (BUCK_SEL = 00b, 01b,
10b) or VVM < 6.0 V (BUCK_SEL = 11b),
0 mA ≤IBK ≤200 mA
VVM–
V
IBK*(RLBK
+
2)(1)
VVM > 6 V, 0 mA ≤IBK ≤50 mA,
BUCK_SEL = 00b
3.1
4.6
3.7
5.2
3.3
3.5
5.4
4.3
6.2
V
V
V
V
VVM > 6 V, 0 mA ≤IBK ≤50 mA,
BUCK_SEL = 01b
5.0
4.0
Buck regulator average voltage
(LBK = 22 µH, CBK = 22 µF)
(SPI Device)
VVM > 6 V, 0 mA ≤IBK ≤50 mA,
BUCK_SEL = 10b
VVM > 6.7 V, 0 mA ≤IBK ≤50 mA,
BUCK_SEL = 11b
5.7
VVM < 6.0 V (BUCK_SEL = 00b, 01b,
10b) or VVM < 6.0 V (BUCK_SEL = 11b),
0 mA ≤IBK ≤50 mA
VVM–
V
IBK*(RLBK
+
2) (1)
VVM > 6 V, 0 mA ≤IBK ≤40 mA,
BUCK_SEL = 00b
3.1
4.6
3.7
5.2
3.3
3.5
5.4
4.3
6.2
V
V
V
V
VVM > 6 V, 0 mA ≤IBK ≤40 mA,
BUCK_SEL = 01b
5.0
4.0
5.7
Buck regulator average voltage
(RBK = 22 Ω, CBK = 22 µF)
(SPI Device)
VVM > 6 V, 0 mA ≤IBK ≤40 mA,
BUCK_SEL = 10b
VVM > 6.7 V, 0 mA ≤IBK ≤40 mA,
BUCK_SEL = 11b
VVM < 6.0 V (BUCK_SEL = 00b, 01b,
10b) or VVM < 6.0 V (BUCK_SEL = 11b),
0 mA ≤IBK ≤40 mA
VVM–
IBK*(RBK+2
)
V
VVM > 6 V, 0 mA ≤IBK ≤200 mA,
VSEL_BK pin tied to AGND
3.1
4.6
3.3
5.0
3.5
5.4
V
V
VVM > 6 V, 0 mA ≤IBK ≤200
mA, VSEL_BK pin to Hi-Z
VVM > 6 V, 0 mA ≤IBK ≤200
mA, VSEL_BK pin to 47 kΩ +/- 5% tied
to AVDD
Buck regulator average voltage
(LBK = 47 µH, CBK = 22 µF)
(HW Device)
3.7
5.2
4.0
4.3
6.2
V
V
V
VBK
VVM > 6.7 V, 0 mA ≤IBK ≤200 mA,
VSEL_BK pin tied to AVDD
5.7
VVM–
VVM < 6.0 V, 0 mA ≤IBK ≤200 mA
IBK*(RLBK
+
2)(1)
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TJ = –40°C to +150°C, VVM = 4.5 to 35 V (unless otherwise noted). Typical limits apply for TA = 25°C, VVM = 24 V
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
VVM > 6 V, 0 mA ≤IBK ≤50 mA,
VSEL_BK pin tied to AGND
3.1
3.3
3.5
5.4
V
V
VVM > 6 V, 0 mA ≤IBK ≤50
mA, VSEL_BK pin to Hi-Z
4.6
3.7
5.2
5.0
4.0
VVM > 6 V, 0 mA ≤IBK ≤50
mA, VSEL_BK pin to 47 kΩ +/- 5% tied
to AVDD
Buck regulator average voltage
(LBK = 22 µH, CBK = 22 µF)
(HW Device)
4.3
6.2
V
V
V
VBK
VVM > 6.7 V, 0 mA ≤IBK ≤50 mA,
VSEL_BK pin tied to AVDD
5.7
VVM–
VVM < 6.0 V, 0 mA ≤IBK ≤50 mA
IBK*(RLBK
+
2)(1)
VVM > 6 V, 0 mA ≤IBK ≤40 mA,
VSEL_BK pin tied to AGND
3.1
4.6
3.3
3.5
5.4
V
V
VVM > 6 V, 0 mA ≤IBK ≤40
mA, VSEL_BK pin to Hi-Z
5.0
4.0
5.7
VVM > 6 V, 0 mA ≤IBK ≤40
mA, VSEL_BK pin to 47 kΩ +/- 5% tied
to AVDD
Buck regulator average voltage
(RBK = 22 Ω, CBK = 22 µF)
(HW Device)
3.7
5.2
4.3
6.2
V
V
V
VBK
VVM > 6.7 V, 0 mA ≤IBK ≤40 mA,
VSEL_BK pin tied to AVDD
VVM–
IBK*(RBK+2
)
VVM < 6.0 V, 0 mA ≤IBK ≤40 mA
VVM > 6 V, 0 mA ≤IBK ≤200 mA, Buck
regulator with inductor, LBK = 47 uH, CBK
= 22 µF
100 mV
100 mV
–100
–100
–100
VVM > 6 V, 0 mA ≤IBK ≤50 mA, Buck
regulator with inductor, LBK = 22 uH, CBK
= 22 µF
VBK_RIP
Buck regulator ripple voltage
VVM > 6 V, 0 mA ≤IBK ≤50 mA, Buck
regulator with resistor; RBK = 22 Ω, CBK
= 22 µF
100 mV
200 mA
LBK = 47 uH, CBK = 22 µF,
BUCK_PS_DIS = 1b
LBK = 47 uH, CBK = 22 µF,
BUCK_PS_DIS = 0b
200 –
IAVDD
mA
LBK = 22 uH, CBK
22 µF, BUCK_PS_DIS = 1b
=
50 mA
IBK
External buck regulator load
LBK = 22 uH, CBK = 22 µF,
BUCK_PS_DIS = 0b
50 –
IAVDD
mA
RBK = 22 Ω, CBK
=
40 mA
22 µF, BUCK_PS_DIS = 1b
RBK = 22 Ω, CBK = 22 µF,
BUCK_PS_DIS = 0b
40 –
IAVDD
mA
Regulation Mode
Linear Mode
20
20
535 kHz
535 kHz
fSW_BK
Buck regulator switching frequency
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TJ = –40°C to +150°C, VVM = 4.5 to 35 V (unless otherwise noted). Typical limits apply for TA = 25°C, VVM = 24 V
PARAMETER
TEST CONDITIONS
VBK rising, BUCK_SEL = 00b
VBK falling, BUCK_SEL = 00b
VBK rising, BUCK_SEL = 01b
VBK falling, BUCK_SEL = 01b
VBK rising, BUCK_SEL = 10b
VBK falling, BUCK_SEL = 10b
VBK rising, BUCK_SEL = 11b
VBK falling, BUCK_SEL = 11b
VBK rising, VSEL_BK pin tied to AGND
VBK falling, VSEL_BK pin tied to AGND
MIN
2.7
2.5
4.2
4.0
2.7
2.5
4.2
4
TYP
2.8
2.6
4.4
4.2
2.8
2.6
4.4
4.2
2.8
2.6
MAX UNIT
2.9
2.7
V
V
V
V
V
V
V
V
V
V
4.55
4.35
2.9
Buck regulator undervoltage lockout
(SPI Device)
VBK_UV
2.7
4.55
4.35
2.9
2.7
2.5
2.7
VBK rising, VSEL_BK pin to 47 kΩ+/-
5% tied to AVDD
4.3
4.1
4.4
4.2
4.5
4.3
V
V
VBK falling, VSEL_BK pin to 47 kΩ+/-
5% tied to AVDD
Buck regulator undervoltage lockout
(HW Device)
VBK_UV
VBK rising, VSEL_BK pin to Hi-Z
2.7
2.5
4.2
4.0
2.8
2.6
4.4
4.2
2.9
2.7
V
V
V
V
VBK falling, VSEL_BK pin to Hi-Z
VBK rising, VSEL_BK pin tied to AVDD
VBK falling, VSEL_BK pin tied to AVDD
4.55
4.35
Buck regulator undervoltage lockout
hysteresis
VBK_UV_HYS
Rising to falling threshold
90
200
320 mV
BUCK_CL = 0b
BUCK_CL = 1b
360
80
600
150
900 mA
250 mA
Buck regulator Current limit threshold
(SPI Device)
IBK_CL
Buck regulator Current limit threshold
(HW Device)
IBK_CL
360
600
900 mA
Buck regulator Overcurrent protection
trip point
IBK_OCP
2
3
1
4
A
tBK_RETRY
Overcurrent protection retry time
0.7
1.3 ms
LOGIC-LEVEL INPUTS (DRVOFF, INHx, INLx, nSLEEP, SCLK, SDI)
VIL
Input logic low voltage
0
1.5
1.6
180
95
0.6
5.5
5.5
V
V
V
Other Pins
VIH
Input logic high voltage
nSLEEP
Other PIns
300
250
420 mV
420 mV
VHYS
IIL
Input logic hysteresis
Input logic low current
Input logic high current
nSLEEP
VPIN (Pin Voltage) = 0 V
nSLEEP, VPIN (Pin Voltage) = 5 V
Other pins, VPIN (Pin Voltage) = 5 V
nSLEEP
1
30
µA
µA
µA
kΩ
kΩ
pF
–1
10
IIH
30
75
150
70
200
100
30
300
130
RPD
CID
Input pulldown resistance
Input capacitance
Other pins
LOGIC-LEVEL INPUTS (nSCS)
VIL
Input logic low voltage
Input logic high voltage
Input logic hysteresis
Input logic low current
Input logic high current
Input pullup resistance
Input capacitance
0
1.5
0.6
5.5
V
V
VIH
VHYS
IIL
180
300
420 mV
VPIN (Pin Voltage) = 0 V
VPIN (Pin Voltage) = 5 V
75
25
µA
µA
IIH
–1
RPU
CID
80
100
30
130
kΩ
pF
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TJ = –40°C to +150°C, VVM = 4.5 to 35 V (unless otherwise noted). Typical limits apply for TA = 25°C, VVM = 24 V
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
FOUR-LEVEL INPUTS (GAIN, MODE, SLEW, VSEL_BK)
0.2*AVD
VL1
VL2
VL3
VL4
Input mode 1 voltage
Input mode 2 voltage
Input mode 3 voltage
Input mode 4 voltage
Tied to AGND
0
V
V
V
V
D
0.27*AV
DD
0.545*AV
DD
Hi-Z
0.5*AVDD
0.606*AV 0.757*AVD 0.909*AV
47 kΩ+/- 5% tied to AVDD
Tied to AVDD
DD
D
DD
0.945*AV
DD
AVDD
RPU
RPD
Input pullup resistance
To AVDD
To AGND
70
70
100
100
130
130
kΩ
kΩ
Input pulldown resistance
FOUR-LEVEL INPUTS (OCP/SR)
0.09*AV
DD
VL1
VL2
VL3
VL4
Input mode 1 voltage
Input mode 2 voltage
Input mode 3 voltage
Input mode 4 voltage
Tied to AGND
22 kΩ ± 5% to AGND
Hi-Z
0
V
V
V
V
0.12*AV
DD
0.2*AVD
D
0.15*AVDD
0.5*AVDD
0.45*AV
DD
0.55*AV
DD
0.94*AV
DD
Tied to AVDD
AVDD
RPU
RPD
Input pullup resistance
To AVDD
To AGND
80
80
100
100
120
120
kΩ
kΩ
Input pulldown resistance
OPEN-DRAIN OUTPUTS (nFAULT)
VOL
IOH
Output logic low voltage
Output logic high current
Output capacitance
IOD = 5 mA
VOD = 5 V
0.4
1
V
µA
pF
–1
COD
30
PUSH-PULL OUTPUTS (SDO)
VOL
VOH
IOL
Output logic low voltage
IOP = 5 mA
IOP = 5 mA
VOP = 0 V
VOP = 5 V
0
2.2
–1
–1
0.4
5.5
1
V
Output logic high voltage
V
Output logic low leakage current
Output logic high leakage current
Output capacitance
µA
µA
pF
IOH
1
COD
30
DRIVER OUTPUTS
VVM > 6 V, IOUT = 1 A, TA = 25°C
VVM < 6 V, IOUT = 1 A, TA = 25°C
VVM > 6 V, IOUT = 1 A, TJ = 150 °C
VVM < 6 V, IOUT = 1 A, TJ = 150 °C
95
105
140
145
120
130
185
190
mΩ
mΩ
mΩ
mΩ
Total MOSFET on resistance (High-side
+ Low-side)
RDS(ON)
VVM = 24 V, SLEW = 00b or SLEW pin
tied to AGND
14
30
25
50
45 V/µs
80 V/µs
185 V/µs
280 V/µs
VVM = 24 V, SLEW = 01b or SLEW pin to
Hi-Z
Phase pin slew rate switching low to high
(Rising from 20 % to 80 %)
SR
VVM = 24 V, SLEW = 10b or SLEW pin to
47 kΩ+/- 5% to AVDD
80
125
200
VVM = 24 V, SLEW = 11b or SLEW pin
tied to AVDD
130
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TJ = –40°C to +150°C, VVM = 4.5 to 35 V (unless otherwise noted). Typical limits apply for TA = 25°C, VVM = 24 V
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
VVM = 24 V, SLEW = 00b or SLEW pin
tied to AGND
14
25
45 V/µs
VVM = 24 V, SLEW = 01b or SLEW pin to
Hi-Z
30
80
50
125
200
80 V/µs
185 V/µs
280 V/µs
Phase pin slew rate switching high to low
(Falling from 80 % to 20 %)
SR
VVM = 24 V, SLEW = 10b or SLEW pin to
47 kΩ+/- 5% to AVDD
VVM = 24 V, SLEW = 11b or SLEW pin
tied to AVDD
110
Leakage current on OUTx
Leakage current on OUTx
VOUTx = VVM, nSLEEP = 1
VOUTx = 0 V, nSLEEP = 1
5
1
mA
µA
ILEAK
VVM = 24 V, SR = 25 V/µs, HS driver
OFF to LS driver ON and LS driver OFF
to HS driver ON
1800
1100
650
3400
1550
1000
750
ns
ns
ns
ns
VVM = 24 V, SR = 50 V/µs, HS driver
OFF to LS driver ON and LS driver OFF
to HS driver ON
Output dead time (high to low / low to
high)
tDEAD
VVM = 24 V, SR = 125 V/µs, HS driver
OFF to LS driver ON and LS driver OFF
to HS driver ON
VVM = 24 V, SR = 200 V/µs, HS driver
OFF to LS driver ON and LS driver OFF
to HS driver ON
500
VVM = 24 V, INHx/INLx = 1 to OUTx
transition, SR = 25 V/µs
2000
1200
800
4550
2150
1350
1050
ns
ns
ns
VVM = 24 V, INHx/INLx = 1 to OUTx
transition, SR = 50V/µs
Propagation delay (high-side / low-side
ON/OFF)
tPD
VVM = 24 V, INHx/INLx = 1 to OUTx
transition, SR = 125 V/µs
VVM = 24 V, INHx/INLx = 1 to OUTx
transition, SR = 200 V/µs
650
ns
ns
tMIN_PULSE
Minimum output pulse width
SR = 200 V/µs
600
CURRENT SENSE AMPLIFIER
CSA_GAIN = 00b
0.15
0.3
0.6
1.2
0.15
0.3
0.6
1.2
V/A
V/A
V/A
V/A
V/A
V/A
V/A
V/A
%
CSA_GAIN = 01b
GCSA
Current sense gain (SPI Device)
CSA_GAIN = 10b
CSA_GAIN = 11b
GAIN pin tied to AGND
GAIN pin to Hi-Z
GCSA
Current sense gain (HW Device)
GAIN pin to 47 kΩ ± 5% to AVDD
GAIN pin tied to AVDD
TA = 25°C, 0A ≤IPHASE ≤4A
TA = 25°C, 4A < IPHASE ≤6A
TJ = 0°C to 125°C, 0A ≤IPHASE ≤4A
TJ = 0°C to 125°C, 4A < IPHASE ≤6A
0A ≤IPHASE ≤4A
GCSA_ERR
GCSA_ERR
GCSA_ERR
GCSA_ERR
GCSA_ERR
GCSA_ERR
Current sense gain error
Current sense gain error
Current sense gain error
Current sense gain error
Current sense gain error
Current sense gain error
2
4.2
4
–4.5
-3.5
-5
%
%
-3.5
-5
6
%
4.5
6.5
3
%
-6
%
4A < IPHASE ≤6A
TA = 25°C
%
–3
–5
Current sense gain error matching
between phases A, B and C
IMATCH
5
%
VVREF
–
VLINEAR
SOX output voltage linear range
0.25
V
0.25
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TJ = –40°C to +150°C, VVM = 4.5 to 35 V (unless otherwise noted). Typical limits apply for TA = 25°C, VVM = 24 V
PARAMETER
TEST CONDITIONS
Phase current = 0 A, GCSA = 0.15 V/A
Phase current = 0 A, GCSA = 0.3 V/A
Phase current = 0 A, GCSA = 0.6 V/A
Phase current = 0 A, GCSA = 1.2 V/A
Step on SOX = 1.2 V, GCSA = 0.15 V/A
Step on SOX = 1.2 V, GCSA = 0.3 V/A
Step on SOX = 1.2 V, GCSA = 0.6 V/A
Step on SOX = 1.2 V, GCSA = 1.2 V/A
Phase current = 0 A
MIN
–50
–50
–50
–50
TYP
MAX UNIT
50 mA
50 mA
50 mA
50 mA
IOFFSET
Current sense offset low side current in
1
1
μs
μs
μs
μs
µA/℃
µA
tSET
Settling time to ±1%, 30 pF
1
1
VDRIFT
IVREF
Drift offset
160
50
80
56
22
–160
VREF input current
VREF = 3.0 V
AVDD to SOx, DC
55
39
5
dB
PSRR
Power Supply Rejection Ratio
AVDD to SOx, 10 kHz
dB
AVDD to SOx, 500 kHz
dB
PULSE-BY-PULSE CURRENT LIMIT
AVDD/2
–0.4
Voltage on VLIM pin for cycle by cycle
current limit
VLIM
AVDD/2
V
A
Current limit corresponding to VLIM pin
voltage range
ILIMIT
0
8
ILIM_AC
tBLANK
Current limit accuracy
10
%
–10
Cycle by cycle current limit blank time
5
µs
PROTECTION CIRCUITS
VM rising
VM falling
4.3
4.1
4.4
4.2
4.5
4.3
V
V
VUVLO Supply undervoltage lockout (UVLO)
VUVLO_HYS Supply undervoltage lockout hysteresis Rising to falling threshold
140
200
350 mV
Supply undervoltage lockout deglitch
time
tUVLO
3
32.5
31.8
20
5
34
33
22
21
7
35
µs
V
Supply rising, OVP_EN = 1, OVP_SEL =
0
Supply falling, OVP_EN = 1, OVP_SEL
= 0
34.3
23
V
Supply overvoltage protection (OVP)
(SPI Device)
VOVP
Supply rising, OVP_EN = 1, OVP_SEL =
1
V
Supply falling, OVP_EN = 1, OVP_SEL
= 1
19
22
V
Supply overvoltage protection hysteresis Rising to falling threshold, OVP_SEL = 1
(OVP)
Rising to falling threshold, OVP_SEL = 0
(SPI Device)
0.9
0.7
1
1.1
0.9
V
V
VOVP_HYS
0.8
Supply overvoltage protection deglitch
time
tOVP
2.5
5
7
µs
Supply rising
2.3
2.2
75
2.5
2.4
2.7
2.6
V
V
Charge pump undervoltage lockout
(above VM)
VCPUV
Supply falling
VCPUV_HYS Charge pump UVLO hysteresis
Rising to falling threshold
Supply rising
100
2.85
2.65
140 mV
2.7
2.5
3
V
V
VAVDD_UV
Analog regulator undervoltage lockout
Supply falling
2.8
VAVDD_
Analog regulator undervoltage lockout
hysteresis
Rising to falling threshold
180
200
240 mV
UV_HYS
IOCP
IOCP
Overcurrent protection trip point
Overcurrent protection trip point
OCP_LVL = 0b or OCP pin tied to AGND
OCP_LVL = 1b or OCP pin tied to AVDD
10
15
16
24
22
30
A
A
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TJ = –40°C to +150°C, VVM = 4.5 to 35 V (unless otherwise noted). Typical limits apply for TA = 25°C, VVM = 24 V
PARAMETER
TEST CONDITIONS
MIN
0.06
0.2
0.6
1
TYP
MAX UNIT
OCP_DEG = 00b
0.3
0.7
1.2
1.8
2.5
µs
µs
µs
µs
OCP_DEG = 01b
OCP_DEG = 10b
OCP_DEG = 11b
0.6
Overcurrent protection deglitch time
(SPI Device)
1.25
1.6
tOCP
Overcurrent protection deglitch time
(HW Device)
0.06
0.3
0.6
6
µs
OCP_RETRY = 0
OCP_RETRY = 1
4
5
ms
Overcurrent protection retry time
(SPI Device)
tRETRY
425
500
575 ms
Overcurrent protection retry time
(HW Device)
tRETRY
4
5
6
ms
TOTW
Thermal warning temperature
Thermal warning hysteresis
Die temperature (TJ)
Die temperature (TJ)
Die temperature (TJ)
Die temperature (TJ)
Die temperature (TJ)
135
15
145
20
155
25
°C
°C
°C
°C
°C
TOTW_HYS
TTSD
TTSD_HYS
TTSD_FET
Thermal shutdown temperature
Thermal shutdown hysteresis
Thermal shutdown temperature (FET)
170
15
180
20
190
25
165
175
185
TTSD_FET_HY
Thermal shutdown hysteresis (FET)
Die temperature (TJ)
20
25
30
°C
S
(1) RLBK is resistance of inductor LBK
7.6 SPI Timing Requirements
MIN
NOM
MAX UNIT
tREADY
SPI ready after power up
nSCS minimum high time
nSCS input setup time
nSCS input hold time
1
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tHI_nSCS
tSU_nSCS
tHD_nSCS
tSCLK
300
25
25
SCLK minimum period
SCLK minimum high time
SCLK minimum low time
SDI input data setup time
SDI input data hold time
SDO output data delay time
SDO enable delay time
SDO disable delay time
100
50
tSCLKH
tSCLKL
50
tSU_SDI
tHD_SDI
tDLY_SDO
tEN_SDO
tDIS_SDO
25
25
25
50
50
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7.7 SPI Slave Mode Timings
tHD_nSCS
tHI_nSCS
tSU_nSCS
tSCLK
tSCLKH
tSCLKL
X
MSB
LSB
X
tDIS_SDO
tDLY_SDO
tSU_SDI
tHD_SDI
Z
MSB
LSB
Z
tEN_SDO
图7-1. SPI Secondary Mode Timings
7.8 Typical Characteristics
17
16
15
160
150
140
130
FPWM = 200 kHz
14
13
12
11
10
9
120
TJ = -40 C
110
100
90
TJ = 25 C
TJ = 150 C
80
FPWM = 25 kHz
70
8
60
7
-40 -20
0
20
40
60
80 100 120 140
6
9
12
15
18
21
24
27
30
33
36
Junction Temperature (C)
Supply Voltage (V)
图7-3. RDS(ON) (high and low side combined) for
图7-2. Supply current over supply voltage
MOSFETs over temperature
100
5.75
5.5
TJ = -40 C
97.5
TJ = 25 C
TJ = -150 C
5.25
5
95
92.5
90
4.75
BUCK_SEL = 00b
BUCK_SEL = 01b
BUCK_SEL = 10b
BUCK_SEL = 11b
4.5
87.5
85
4.25
4
82.5
80
3.75
3.5
3.25
3
77.5
75
0
0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2
Buck Output Load Current (A)
4
8
12
16
20
24
28
32
36
Supply Voltage (V)
图7-5. Buck regulator output voltage over load
图7-4. Buck regulator efficiency over supply
current
voltage
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8 Detailed Description
8.1 Overview
The DRV8316C device is an integrated 95-mΩ (high-side + low-side MOSFET's on-state resistance) driver for
3-phase motor-drive applications. The device reduces system component count, cost, and complexity by
integrating three half-bridge MOSFETs, gate drivers, charge pump, current sense amplifiers, linear regulator and
buck regulator for external loads. A standard serial peripheral interface (SPI) provides a simple method for
configuring the various device settings and reading fault diagnostic information through an external
microcontroller. Alternatively, a hardware interface (pin) variant allows for configuring the most commonly used
settings through fixed external resistors.
The architecture uses an internal state machine to protect against short-circuit events and dv/dt parasitic turn-on
of the internal power MOSFETs.
The DRV8316C device integrates three, bidirectional current-sense amplifiers for monitoring the current level
through each of the half-bridges using a built-in current sense. The gain setting of the amplifier can be adjusted
through the SPI or hardware interface.
In addition to the high level of device integration, DRV8316C provides a wide range of integrated protection
features. These features include power-supply undervoltage lockout (UVLO), charge-pump undervoltage lockout
(CPUV), overcurrent protection (OCP), AVDD undervoltage lockout (AVDD_UV), buck regulator UVLO and
overtemperature warning and shutdown (OTW and OTSD). Fault events are indicated by the nFAULT pin with
detailed information available in the SPI registers on the SPI variant.
The DRV8316CT and DRV8316CR device are available in 0.5-mm pin pitch, VQFN surface-mount packages.
The VQFN package size is 7 mm × 5 mm.
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8.2 Functional Block Diagram
VVM
+
CVM1
CCP
VM
CVM2
CFLY
CPL
CP
CPH
To AVDD and
Buck Regulator
Replace Resistor (RBK
)
with Inductor (LBK) for
larger external load
or to reduce power
dissipaꢀon
Charge Pump
Regulators
I/O Control
Ext.
Load
Protection
AVDD
AGND
nSLEEP
VVM
VFB_BK
/
CAVDD1
AVDD Linear Regulator
Overcurrent
Protection
DRVOFF
INHA
LBK
Ext.
Load
SW_BK
Thermal Warning
Thermal Shutdown
CBK
RBK
VVM
GND_BK
Buck Regulator
INLA
FB_BK
Input
INHB
Control
INLB
Predriver Stage
VCP
Power Stage
VM
INHC
HS Pre-
driver
INLC
VDD
OUTA
VLS
RnFAULT
LS Pre-
driver
Digital Control
Output
Current
Sense for
Phase - A
nFAULT
PGND
ISEN_A
Predriver Stage
VCP
Power Stage
VM
Interface
SCLK
HS Pre-
driver
SPI
OUTB
SDI
Current Limit
AVDD
VLS
SOA
SOB
LS Pre-
driver
SDO
Current
Sense for
Phase - B
AVDD
PGND
SOC
nSCS
+
-
ILIM
ISEN_B
Predriver Stage
VCP
Power Stage
VM
VREF/
ILIM
Current Sense Amplifiers
HS Pre-
driver
CVREF
ISEN_A
ISEN_B
ISEN_C
AV
OUTC
SOC
SOB
SOA
VLS
AV
AV
Output Offset
Bias
LS Pre-
driver
Current
Sense for
Phase - C
PGND
ISEN_C
PGND
PGND
PGND
TPAD
图8-1. DRV8316CR Block Diagram
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VVM
+
CVM1
CCP
VM
CVM2
CFLY
CPL
CP
CPH
To AVDD and
Buck Regulator
Replace Resistor (RBK
)
with Inductor (LBK) for
larger external load
or to reduce power
dissipaꢀon
Charge Pump
Regulators
I/O Control
Ext.
Load
Protection
AVDD
AGND
nSLEEP
DRVOFF
VVM
VFB_BK
/
CAVDD1
AVDD Linear Regulator
Overcurrent
Protection
LBK
Ext.
Load
SW_BK
Thermal Warning
Thermal Shutdown
CBK
RBK
GND_BK
VVM
INHA
INLA
INHB
INLB
INHC
Buck Regulator
FB_BK
Predriver Stage
VCP
Power Stage
VM
HS Pre-
driver
Input
Control
OUTA
INLC
VLS
LS Pre-
driver
Digital Control
Current
Sense for
Phase - A
MODE
SLEW
PGND
ISEN_A
Predriver Stage
VCP
Power Stage
VM
OCP/SR
GAIN
HS Pre-
driver
VSEL_BK
OUTB
Current Limit
VLS
SOA
SOB
VDD
LS Pre-
driver
RnFAULT
Current
Sense for
Phase - B
Output
PGND
nFAULT
SOC
+
-
ILIM
ISEN_B
Predriver Stage
VCP
Power Stage
VM
VREF/
ILIM
Current Sense Amplifiers
HS Pre-
driver
CVREF
ISEN_A
ISEN_B
ISEN_C
AV
OUTC
SOC
SOB
SOA
VLS
AV
AV
Output Offset
Bias
LS Pre-
driver
Current
Sense for
Phase - C
PGND
ISEN_C
PGND
PGND
PGND
TPAD
图8-2. DRV8316CT Block Diagram
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8.3 Feature Description
表8-1 lists the recommended values of the external components for the driver.
表8-1. DRV8316C External Components
COMPONENTS
PIN 1
PIN 2
RECOMMENDED
X5R or X7R, 0.1-µF, TI recommends a capacitor
voltage rating at least twice the normal operating
voltage of the device
CVM1
VM
PGND
≥10-µF, TI recommends a capacitor voltage rating at
least twice the normal operating voltage of the device
CVM2
CCP
VM
CP
PGND
VM
X5R or X7R, 16-V, 1-µF
X5R or X7R, 47-nF, TI recommends a capacitor
voltage rating at least twice the normal operating
voltage
CFLY
CPH
CPL
X5R or X7R, 1-µF, ≥6.3-V. In order for AVDD to
accurately regulate output voltage, capacitor should
have effective capacitance between 0.7-µF to 1.3-µF
at 3.3-V across operating temperature.
CAVDD
AVDD
AGND
CBK
LBK
FB_BK
SW_BK
VCC
GND_BK
FB_BK
X5R or X7R, 22-µF, ≥10-V
Output inductor
RnFAULT
RMODE
RSLEW
ROCP
nFAULT
5.1-kΩ, Pullup resistor
MODE
SLEW
AGND or AVDD
AGND or AVDD
AGND or AVDD
AGND or AVDD
AGND or AVDD
AGND
DRV8316CT hardware interface
DRV8316CT hardware interface
DRV8316CT hardware interface
DRV8316CT hardware interface
DRV8316CT hardware interface
X5R or X7R, 0.1-µF, VREF-rated capacitor (Optional)
OCP
RGAIN
GAIN
RVSEL_BK
CVREF
VSEL_BK
VREF/ILIM
备注
TI recommends to connect pull up on nFAULT even if it is not used to avoid undesirable entry into
internal test mode. If external supply is used to pull up nFAULT, ensure that it is pulled to >2.2V on
power up or the device will enter internal test mode.
8.3.1 Output Stage
The DRV8316C device consists of an integrated 95-mΩ (combined high-side and low-side FET's on-state
resistance) NMOS FETs connected in a three-phase H-bridge configuration. A doubler charge pump provides
the proper gate-bias voltage to the high-side NMOS FET's across a wide operating-voltage range in addition to
providing 100% duty-cycle support. An internal linear regulator provides the gate-bias voltage for the low-side
MOSFETs. The device has three VM motor power-supply pins which are to be connected together to the motor-
supply voltage.
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8.3.2 Control Modes
The DRV8316C family of devices provides four different control modes to support various commutation and
control methods. 表8-2 shows the various modes of the DRV8316C device.
表8-2. PWM Control Modes
MODE Pin (Hardware
Variant)
PWM_MODE Bits (SPI
Variant)
VREF/ILIM pin
configuration
MODE
CSA output (SOx)
SOx available
6x Mode
Connected to AGND
Hi-Z
PWM_MODE = 00b
PWM_MODE = 01b
VREF: Reference for CSA
ILIM: Threshold for cycle
by cycle current limit
6x Mode with Current Limit
3x Mode
SOx not available
Connected to AVDD with
RMODE
PWM_MODE = 10b
PWM_MODE = 11b
VREF: Reference for CSA
SOx available
ILIM: Threshold for cycle
by cycle current limit
3x Mode with Current Limit
Connected to AVDD
SOx not available
备注
Texas Instruments does not recommend changing the MODE pin or PWM_MODE register during
operation of the power MOSFETs. Set all INHx and INLx pins to logic low before changing the MODE
pin or PWM_MODE register.
8.3.2.1 6x PWM Mode (PWM_MODE = 00b or MODE Pin Tied to AGND)
In 6x PWM mode, each half-bridge supports three output states: low, high, or high-impedance (Hi-Z). The
corresponding INHx and INLx signals control the output state as listed in 表8-3.
表8-3. 6x PWM Mode Truth Table
INLx
INHx
PHASEx
0
0
1
1
0
1
0
1
Hi-Z
H
L
Hi-Z
图8-3 shows the application diagram of DRV8316C configured in 6x PWM mode.
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VM
OUTA
nSLEEP
INHA
INLA
INHB
VM
Controller
INLB
INHC
OUTB
Gate
Drive
and
Logic
OCP
BLDC
Motor
INLC
VM
MODE
GND
OUTC
GND
图8-3. 6x PWM Mode
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8.3.2.2 3x PWM Mode (PWM_MODE = 10b or MODE Pin is Connected to AVDD with RMODE
)
In 3x PWM mode, the INHx pin controls each half-bridge and supports two output states: low or high. The INLx
pin is used to put the half bridge in the Hi-Z state. If the Hi-Z state is not required, tie all INLx pins to logic high.
The corresponding INHx and INLx signals control the output state as listed in 表8-4.
表8-4. 3x PWM Mode Truth Table
INLx
INHx
PHASEx
0
1
1
X
0
1
Hi-Z
L
H
图8-4 shows the application diagram of DRV8316C configured in 3x PWM mode.
VM
OUTA
nSLEEP
INHA
VM
INHB
INHC
Controller
INLA
INLB
OUTB
Gate
Drive
and
Logic
OCP
BLDC
Motor
INLC
VM
AVDD
AVDD
OUTC
RMODE
GND
图8-4. 3x PWM Mode
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8.3.2.3 Current Limit Mode (PWM_MODE = 01b / 11b or MODE Pin is Hi-Z or Connected to AVDD)
图 8-5 and 图 8-6 show the application diagram of DRV8316C configured in current limit mode. A current limit
comparator is used for the current limiting - comparator input is generated with the three current sense
amplifiers' outputs.
VM
OUTA
nSLEEP
Current
Sense
ISEN_A
INHA
VM
INLA
INHB
Controller
INLB
INHC
OUTB
Gate
Drive
and
Logic
Current
Sense
OCP
BLDC
Motor
ISEN_B
INLC
VM
MODE
Hi-Z
OUTC
Current
Sense
ISEN_C
GND
Current Limit
SOA
SOB
ILIM
SOC
-
+
PWM Current Limit
图8-5. 6x PWM Mode with Current Limit
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VM
OUTA
nSLEEP
Current
Sense
ISEN_A
INHA
INHB
INHC
VM
Controller
INLA
INLB
OUTB
Gate
Drive
and
Logic
Current
Sense
OCP
BLDC
Motor
ISEN_B
INLC
VM
AVDD
MODE
AVDD
OUTC
Current
Sense
ISEN_C
GND
Current Limit
SOA
SOB
ILIM
SOC
-
+
PWM Current Limit
图8-6. 3x PWM Mode with Current Limit
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8.3.3 Device Interface Modes
DRV8316C supports two different interface modes (SPI and hardware) to provide either flexibility or simplicity to
users. The two interface modes share the same pins (except pins 24, 33-36) allowing the different versions to be
largely pin-to-pin compatible. This compatibility allows application designers to evaluate with one interface
variant and switch to another with minimal modifications to their design.
8.3.3.1 Serial Peripheral Interface (SPI)
The SPI variant supports a serial communication bus that allows an external microcontroller to send and receive
data with DRV8316C. This allows the external microcontroller to configure device settings and read detailed fault
information. The SPI interface is a four wire interface using the SCLK, SDI, SDO, and nSCS pins which are
described as follows:
• The SCLK pin is an input that accepts a clock signal to determine when data is captured and propagated on
the SDI and SDO pins.
• The SDI pin is the data input.
• The SDO pin is the data output. The SDO pin can be configured to either open-drain or push-pull through
SDO_MODE.
• The nSCS pin is the chip select input. A logic low signal on this pin enables SPI communication with the
DRV8316C.
For more information on the SPI, see the 节8.5 section.
8.3.3.2 Hardware Interface
Hardware variant uses four resistor-configurable inputs (in the place of SPI pins) which are GAIN, SLEW,
MODE, and OCP.
This variant allows the application designer to configure the critical device settings by tying each pin to logic high
or logic low or leave it floating or pull-up to logic high with a suitable resistor. This eliminates the requirement for
an SPI bus from the external microcontroller to configure DRV8316C. General fault information can still be
obtained through the nFAULT pin.
• The GAIN pin configures the gain of the current sense amplifier.
• The SLEW pin configures the slew rate of the output voltage.
• The MODE pin configures the PWM control mode.
• The OCP/SR pin is used to configures the OCP level and active demagnetization modes.
• The VSEL_BK pin is used to configure the buck regulator voltage.
For more information on the hardware interface, see the 节8.3.10 section.
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AVDD
RSLEW
AVDD
SLEW
SCLK
AVDD
AVDD
MODE
SPI
Interface
SDI
AVDD
VCC
Hardware
Interface
RPU
OCP/SR
GAIN
SDO
AVDD
AVDD
nSCS
图8-8. DRV8316CT Hardware Interface
图8-7. DRV8316CR SPI Interface
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8.3.4 Step-Down Mixed-Mode Buck Regulator
The DRV8316CR and DRV8316CT have an integrated mixed-mode buck regulator to supply regulated 3.3-V or
5.0-V power for an external controller or system voltage rail. Additionally, the buck output can also be configured
to 4.0-V or 5.7-V for supporting the extra headroom for external LDO for generating a 3.3-V or 5.0-V supplies.
The output voltage of the buck is set by the VSEL_BK pin in the DRV8316CT device (hardware variant) and
BUCK_SEL bits in the DRV8316CR device (SPI variant).
The buck regulator has a low quiescent current of ~1-2 mA during light loads to prolong battery life. The device
improves performance during line and load transients by implementing a pulse-frequency current-mode control
scheme which requires less output capacitance and simplifies frequency compensation design.
To disable the buck regulator, set the BUCK_DIS bit to 1b in DRV8316CR (SPI variant). The buck regulator
cannot be disabled in DRV8316CT (hardware variant).
备注
If the buck regulator is unused, the buck pins SW_BK, GND_BK, and FB_BK cannot be left floating or
connected to ground. The buck regulator components LBK/RBK and CBK must be connected in
hardware.
表8-5. Recommended settings for Buck Regulator
Buck Mode
Buck output voltage Max output current Max output current Buck current limit
AVDD power
sequencing
from AVDD (IAVDD
)
from Buck (IBK)
3.3-V or 4.0-V
5.0-V or 5.7-V
5.0-V or 5.7-V
3.3-V or 4.0-V
5.0-V or 5.7-V
3.3-V or 4.0-V
30 mA
200 mA
600 mA (BUCK_CL = Not supported
Inductor - 47 μH
Inductor - 47 μH
Inductor - 22 μH
Inductor - 22 μH
Resistor - 22 μH
Resistor - 22 μH
0b)
(BUCK_PS_DIS = 1)
30 mA
30 mA
30 mA
30 mA
30 mA
200 mA - IAVDD
50 mA
600 mA (BUCK_CL = Supported
0b)
(BUCK_PS_DIS = 0)
150 mA (BUCK_CL = Not supported
1b)
(BUCK_PS_DIS = 1)
50 mA - IAVDD
40 mA
150 mA (BUCK_CL = Supported
1b)
(BUCK_PS_DIS = 0)
150 mA (BUCK_CL = Not supported
1b)
(BUCK_PS_DIS = 1)
40 mA - IAVDD
150 mA (BUCK_CL = Supported
1b)
(BUCK_PS_DIS = 0)
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8.3.4.1 Buck in Inductor Mode
The buck regulator in DRV8316C device is primarily designed to support low inductance of 47 µH and 22 µH
inductors. The 47 µH inductor allows the buck regulator to operate up to 200 mA load current support, whereas
the 22 µH inductor limits the load current to 50 mA.
图8-9 shows the connection of buck regulator in inductor mode.
VM
SW_BK
Ext. Load
VBK
Control
LBK
CBK
GND_BK
FB_BK
图8-9. Buck (Inductor Mode)
8.3.4.2 Buck in Resistor mode
If the external load requirements is less than 40 mA, the inductor can be replaced with a resistor. In resistor
mode the power is dissipated across the external resistor and the efficiency is lower than buck in inductor mode.
图8-10 shows the connection of buck regulator in resistor mode.
VM
SW_BK
Ext. Load
VBK
Control
RBK
CBK
GND_BK
FB_BK
图8-10. Buck (Resistor Mode)
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8.3.4.3 Buck Regulator with External LDO
The buck regulator also supports the voltage requirement to fed to external LDO to generate standard 3.3 V or
5.0 V output rail with higher accuracies. The buck output voltage should be configured to 4 V or 5.5 V to provide
for a extra headroom to support the external LDO for generating 3.3 V or 5 V rail as shown in 图8-11.
This allows for a lower-voltage LDO design to save cost and better thermal management due to low drop-out
voltage.
VM
VLDO
(3.3V / 5V)
VBK
SW_BK
(4V / 5.7V)
VIN
VLDO
Ext. Load
CLDO
Control
LBK
3.3V / 5V
LDO
CBK
GND_BK
FB_BK
GND
External LDO
GND
图8-11. Buck Regulator with External LDO
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8.3.4.4 AVDD Power Sequencing on Buck Regulator
The AVDD LDO has an option of using the power supply from mixed mode buck regulator to reduce power
dissipation internally. The power sequencing mode allows on-the-fly changeover of LDO power supply from DC
mains (VM) to buck output (VBK) as shown in 图 8-12. This sequencing can be configured through the
BUCK_PS_DIS bit . Power sequencing is supported only when buck output voltage is set to 5.0 V or 5.7 V.
VM
SW_BK
Ext. Load
VBK
Control
LBK
CBK
GND_BK
FB_BK
BUCK_PS_DIS
VBK
VM
REF
+
–
AVDD
AGND
External Load
CAVDD
图8-12. AVDD Power Sequencing on mixed mode Buck Regulator
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8.3.4.5 Mixed mode Buck Operation and Control
The buck regulator implements a pulse frequency modulation (PFM) architecture with peak current mode control.
The output voltage of the buck regulator is compared with the internal reference voltage (VBK_REF) which is
internally generated depending on the buck-output voltage setting (BUCK_SEL) which constitutes an outer
voltage control loop. Depending on the comparator output going high (VBK < VBK_REF) or low (VBK > VBK_REF),
the high-side power FET of the buck turns on and turna off respectively. An independent current control loop
monitors the current in high-side power FET (IBK) and turns off the high-side FET when the current becomes
higher than the buck current limit (IBK_CL). This implements a current limit control for the buck regulator. 图 8-13
shows the architecture of the buck and various control/protection loops.
SW_BK
IBK
Ext. Load
VBK
VM
LBK
PWM Control
and Driver
CBK
GND_BK
IBK
+
Current Limit
OC Protection
UV Protection
_
IBK_CL
IBK
+
_
IBK_OCP
FB_BK
VBK
+
_
VBK_UVLO
VBK
+
_
Voltage Control
VBK_REF
Buck
Reference
Voltage
BUCK_SEL
Buck Control
Generator
图8-13. Buck Operation and Control Loops
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8.3.5 AVDD Linear Voltage Regulator
A 3.3-V linear regulator is integrated into the DRV8316C family of devices and is available for use by external
circuitry. The AVDD regulator is used for powering up the internal digital circuitry of the device and additionally,
this regulator can also provide the supply voltage for a low-power MCU or other circuitry supporting low current
(up to 30 mA). The output of the AVDD regulator should be bypassed near the AVDD pin with a X5R or X7R, 1-
µF, 6.3-V ceramic capacitor routed directly back to the adjacent AGND ground pin.
The AVDD nominal, no-load output voltage is 3.3 V.
FB_BK
BUCK_PS_DIS
VBK
VM
REF
+
–
AVDD
AGND
External Load
CAVDD
图8-14. AVDD Linear Regulator Block Diagram
Use 方程式 1 to calculate the power dissipated in the device by the AVDD linear regulator with VM as supply
(BUCK_PS_DIS = 1b)
2 = (88/ F 8#8&&) × +#8&&
(1)
For example, at a VVM of 24 V, drawing 20 mA out of AVDD results in a power dissipation as shown in 方程式2.
P = 24 V - 3.3 V ì 20 mA = 414 mW
(2)
Use 方程式 3 to calculate the power dissipated in the device by the AVDD linear regulator with buck output as
supply (BUCK_PS_DIS = 0b)
P =
V
− V
× I
AVDD
(3)
FB_BK
AVDD
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8.3.6 Charge Pump
Because the output stages use N-channel FETs, the device requires a gate-drive voltage higher than the VM
power supply to enhance the high-side FETs fully. The DRV8316C integrates a charge-pump circuit that
generates a voltage above the VM supply for this purpose.
The charge pump requires two external capacitors for operation. See 图 8-1, 图 8-2, 节 6 and 节 8.3 for details
on these capacitors (value, connection, and so forth).
The charge pump shuts down when nSLEEP is low.
VM
VM
CCP
CP
CPH
VM
Charge
Pump
Control
CFLY
CPL
图8-15. DRV8316C Charge Pump
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8.3.7 Slew Rate Control
An adjustable gate-drive current control to the MOSFETs of half-bridges is implemented to achieve the slew rate
control. The MOSFET VDS slew rates are a critical factor for optimizing radiated emissions, energy and duration
of diode recovery spikes, and switching voltage transients related to parasitics. These slew rates are
predominantly determined by the rate of gate charge to internal MOSFETs as shown in 图8-16.
VM
VCP (Internal)
Slew Rate
Control
OUTx
VCP (Internal)
Slew Rate
Control
GND
图8-16. Slew Rate Circuit Implementation
The slew rate can be adjusted by the SLEW pin in hardware variant or by using the SLEW bits in SPI variant.
Four slew rate settings are available : 25-V/µs, 50-V/µs, 125-V/µs or 200-V/µs. The slew rate is calculated by the
rise time and fall time of the voltage on OUTx pin as shown in 图8-17.
VOUTx
VM
VM
80%
80%
20%
20%
0
Time
tfall
trise
图8-17. Slew Rate Timings
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8.3.8 Cross Conduction (Dead Time)
The device is fully protected against any cross conduction of MOSFETs - during the switching of high-side and
low-side MOSFETs, DRV8316C avoids shoot-through events by inserting a dead time (tdead). This is
implemented by sensing the gate-source voltage (VGS) of the high-side and low-side MOSFETs and ensuring
that VGS of high-side MOSFET has reached below turn-off levels before switching on the low-side MOSFET of
same half-bridge (or vice-versa) as shown in 图8-18 and 图8-19.
VM
HS Gate
Control
+
VGS_HS
–
OUTx
LS Gate
Control
+
GND
VGS_LS
–
图8-18. Cross Conduction Protection
VGS_HS
10%
tDEAD
VGS_LS
10%
Time
图8-19. Dead Time
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8.3.9 Propagation Delay
The propagation delay time (tpd) is measured as the time between an input logic edge to change in gate driver
voltage. This time has three parts consisting of the digital input deglitcher delay, analog driver, and comparator
delay.
The input deglitcher prevents high-frequency noise on the input pins from affecting the output state of the gate
drivers. To support multiple control modes, a small digital delay is added as the input command propagates
through the device.
INHx/INLx
INLx : 0
1
OUTx High
OUTx Low
OUTx High
OUTx Low
80%
tPD
20%
INHx : 0
1
OUTx
Time
图8-20. Propagation Delay
8.3.9.1 Driver Delay Compensation
DRV8316C monitors the propagation delay internally and adds a variable delay on top of it to provide fixed delay
as shown in 图 8-21 and 图 8-22. Delay compensation feature reduces uncertainty caused in timing of current
measurement and also reduces duty cycle distortion caused due to propagation delay.
The fixed delay is summation of propagation delay (tPD) caused to internal driver delay and variable delay (tVAR
)
added to compensate for uncertainty. The fixed delay can be configured through DLY_TARGET register. Refer
表8-6 for recommendation on configuration for DLY_TARGET for different slew rate settings.
Delay compensation is only available in SPI variant DRV8316C and can be enabled by configuring DLYCMP_EN
and DLY_TARGET. It is disabled in hardware variant DRV8316C.
INLx
INHx
1V
1V
1V
1V
OUTx
OUTx
Time
Time
tVAR
tVAR
tPD
tPD
tVAR
tVAR
tPD
tPD
DLY_TARGET
DLY_TARGET
DLY_TARGET
DLY_TARGET
图8-22. Delay Compensation with current flowing
图8-21. Delay Compensation with current flowing
into the phase
out of phase
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表8-6. Delay Target Recommendation
SLEW RATE
200 V/μs
125 V/μs
50 V/μs
DLY_TARGET
DLY_TARGET = 0x5 (1.2 μs)
DLY_TARGET = 0x8 (1.8 μs)
DLY_TARGET = 0xB (2.4 μs)
DLY_TARGET = 0xF (3.2 μs)
25 V/μs
8.3.10 Pin Diagrams
This section presents the I/O structure of all digital input and output pins.
8.3.10.1 Logic Level Input Pin (Internal Pulldown)
图 8-23 shows the input structure for the logic level pins, DRVOFF, INHx, INLx, nSLEEP, SCLK and SDI. The
input can be with a voltage or external resistor. It is recommended to put these pins low in device sleep mode to
reduce leakage current through internal pull-down resistors.
AVDD
STATE
VIH
CONNECTION
Tied to AVDD
Tied to GND
INPUT
Logic High
Logic Low
VIL
RPD
ESD
图8-23. Logic-Level Input Pin Structure
8.3.10.2 Logic Level Input Pin (Internal Pullup)
图8-24 shows the input structure for the logic level pin, nSCS. The input can be driven with a voltage or external
resistor.
AVDD
AVDD
STATE
VIH
CONNECTION
Tied to AVDD
Tied to GND
INPUT
RPU
Logic High
Logic Low
VIL
ESD
图8-24. Logic nSCC
8.3.10.3 Open Drain Pin
图 8-25 shows the structure of the open-drain output pin, nFAULT and SDO in open drain mode. The open-drain
output requires an external pullup resistor to function properly.
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AVDD
STATE
No Fault
Fault
STATUS
Pulled-Up
RPU
OUTPUT
Inactive
Active
Pulled-Down
ESD
图8-25. Open Drain
8.3.10.4 Push Pull Pin
图8-26 shows the structure of SDO in push-pull mode.
AVDD
STATE
VOH
STATUS
Pulled-Up
OUTPUT
VOL
Pulled-Down
ESD
Logic High
Logic Low
图8-26. Push Pull
8.3.10.5 Four Level Input Pin
图 8-27 shows the structure of the four level input pins, GAIN, MODE, SLEW, OCP/SR and VSEL_BK on
hardware interface devices. The input can be set with an external resistor.
CONTROL
AVDD
AVDD
STATE
VL1
RESISTANCE
Tied to AGND
Setting-1
Setting-2
Setting-3
Setting-4
+
RPU
œ
Hi-Z (>2000 kΩ to
AGND)
VL2
VL3
VL4
+
RPD
47 kΩ ±5%
to AVDD
œ
Tied to AVDD
+
œ
图8-27. Four Level Input Pin Structure
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8.3.11 Current Sense Amplifiers
The DRV8316C integrates three, high-performance low-side current sense amplifiers for current measurements
using built-in current sensing. Low-side current measurements are commonly used to implement overcurrent
protection, external torque control, or brushless-DC commutation with an external controller. The three amplifiers
can be used to sense the current in each of the half-bridge legs (when the low-side FET of the corresponding
phase is conducting current). The current sense amplifiers include features such as programmable gain and
external reference (which is provided on the voltage reference pin, VREF).
8.3.11.1 Current Sense Amplifier Operation
The SOx pin on the DRV8316C outputs an analog voltage proportional to current flowing in the low side FETs
multiplied by the gain setting (GCSA). The gain setting is adjustable between four different levels which can be
set by the GAIN pin (in hardware device variant) or the GAIN bits (in SPI device variant).
图 8-28 shows the internal architecture of the current sense amplifiers. The current sense is implemented with
the sense FET on each low-side FET of the DRV8316C device. This current information is fed to the internal I/V
converter, which generates the CSA output voltage on the SOX pin based on the voltage on VREF pin and the
Gain setting. The CSA output voltage can be calculated as :
8
4'(W
51: = @
A ± )#+0 × +176:
2
(4)
VM
VREF
OUTX
Sense
FET
GAIN
I/V Converter
PGND
SOX
图8-28. Integrated Current Sense Amplifier
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图 8-29 and 图 8-30 show the detail of the amplifier operational range. In bi-directional operation, the amplifier
output for 0-V input is set at VREF / 2. Any change in the differential input results in a corresponding change in
the output times the CSA_GAIN factor. The amplifier has a defined region in which it can maintain a linear
operation.
SOX
VREF
(VREF – 0.25) V
IOUTx
V
SOX(range+)
V
SOX(off)max
VREF/2
V
, V
OFF DRIFT
0-A
V
SOX(off)min
V
SOX(range-)
-IOUTx
0.25-V
0-V
图8-29. Bi-directional Current Sense Linear Region
SOX (V)
VREF
(VREF - 0.25)
VREF / 2
VLINEAR
0.25-V
0-V
IOUTx (A) (Current flowing out of OUTx)
图8-30. IOUTx to CSA Transfer Function
备注
The current sense amplifier supports only capacitive load at output. TI recommends connecting low
pass filter with resistor and capacitor on output of current sense amplifier.
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8.3.12 Active Demagnetization
DRV8316C family of devices has smart rectification features (active demagnetization) which decreases power
losses in the device by reducing diode conduction losses. When this feature is enabled, the device automatically
turns ON the corresponding MOSFET whenever it detects diode conduction. This feature can be configured with
the OCP/SR pins in hardware variants. In SPI device variants this can be configured through EN_ASR and
EN_AAR bits. The smart rectification is classified into two categories of automatic synchronous rectification
(ASR) mode and automatic asynchronous rectification (AAR) mode which are described in sections below.
备注
In SPI device variants both bits, EN_ASR and EN_AAR needs to set to 1 to enable active
demagnetization.
The DRV8316C device includes a high-side (AD_HS) and low-side (AD_LS) comparator which detects the
negative flow of current in the device on each half-bridge. The AD_HS comparator compares the sense-FET
output with the supply voltage (VM) threshold, whereas the AD_LS comparator compares with the ground (0-V)
threshold. Depending upon the flow of current from OUTx to VM or PGND to OUTx, the AD_HS or the AD_LS
comparator trips. This comparator provides a reference point for the operation of active demagnetization feature.
VM
AD_HS
Comparator
+
-
Sense
FET
(To Digital)
(To Digital)
OUTX
VM
+
-
Sense
FET
AD_LS
Comparator
0V (GND)
PGND
VREF
I/V Converter
SOX
GAIN
图8-31. Active Demagnetization Operation
表8-7 shows the configuration of ASR and AAR mode in the DRV8316C device.
表8-7. OCP/SR Configuration
MODE Type
OCP/SR Pin (DRV8316CT)
SR Bits (DRV8316CR)
OCP Setting
ASR and AAR Mode
Mode 1
Connected to AGND
EN_ASR = 0, EN_AAR = 0
16 A
ASR and AAR Disabled
Connected to AGND with
RMODE1
Mode 2
EN_ASR = 0, EN_AAR = 0
24 A
ASR and AAR Disabled
Mode 3
Mode 4
Hi-Z
EN_ASR = 1, EN_AAR = 1
EN_ASR = 1, EN_AAR = 1
16 A
24 A
ASR and AAR Enabled
ASR and AAR Enabled
Connected to AVDD
8.3.12.1 Automatic Synchronous Rectification Mode (ASR Mode)
The automatic synchronous rectification (ASR) mode is divided into two categories of ASR during commutation
and ASR during PWM mode.
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8.3.12.1.1 Automatic Synchronous Rectification in Commutation
图 8-32 shows the operation of active demagnetization during the BLDC motor commutation. As shown in 图
8-32 (a), the current is flowing from HA to LC in one commutation state. During the commutation changeover as
shown in 图 8-32 (b), the HC switch is turned on, whereas the commutation current (due to motor inductance) in
OUTA flows through the body diode of LA. This incorporates a higher diode loss depending on the commutation
current. This commutation loss is reduced by turning on the LA for the commutation time as shown in 图8-32 (c).
Similarly the operation of high-side FET is realized in 图8-32 (d), (e) and (f).
VM
VM
HB
HC
HA
HB
HC
HA
OUTA
OUTA
OUTB
OUTB
OUTC
OUTC
OUTC
OUTC
OUTC
OUTC
LA
LB
LC
LA
LB
LC
(a) Current flowing from HA to LC
VM
(d) Current flowing from HC to LA
VM
Decay Current
Decay Current
HB
HC
HB
OUTA
LB
HC
HA
HA
OUTA
OUTB
OUTB
LA
LB
LC
LA
LC
(e) Decay current with AD disabled
VM
(b) Decay current with AD disabled
VM
Decay Current
Decay Current
HB
HC
HB
OUTA
LB
HC
HA
HA
OUTA
OUTB
OUTB
LA
LB
LC
LA
LC
(c) Decay current with AD enabled
(f) Decay current with AD enabled
图8-32. ASR in BLDC Motor Commutation
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图 8-33 (a) shows the BLDC motor phase current waveforms for automatic synchronous rectification mode in
BLDC motor operating with trapezoidal commutation. This figure shows the operation of various switches in a
single commutation cycle.
图 8-33 (b) shows the zoomed waveform of commutation cycle with details on the ASR mode start with margin
time (tmargin) and ASR mode early stop due to active demag. comparator threshold and delays.
Current Limit
Phase ”A‘
Current
LA
HA
HA, LB
HB, LC
HB, LA
HC, LA
HC, LB
HA, LC
(a) Commutation current of Phase —A“
tmargin
tdead
HA Conducts
LA Body Diode
Conducts
HA Body Diode
Conducts
Phase ”A‘
Current
LA Conducts
tdead
HC, LA
HC, LB
HA, LC
HB, LC
(b) Zoomed waveform of Active Demagnetization
图8-33. Current Waveforms for ASR in BLDC Motor Commutation
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8.3.12.1.2 Automatic Synchronous Rectification in PWM Mode
图 8-34 shows the operation of ASR in PWM mode. As shown in this figure, a PWM is applied only on the high-
side FET, whereas the low-side FET is always off. During the PWM off time, current decays from the low-side
FET which results in higher power losses. Therefore, this mode supports turning on the low-side FET during the
low-side diode conduction.
PWM_HS
(Applied)
&t
PWM_LS
(Applied)
&t
PWM_HS
(Actual)
&t
PWM_LS
(Actual)
&t
Ia
&t
ASR Mode Disabled
ASR Mode Enabled
图8-34. ASR in PWM Mode
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8.3.12.2 Automatic Asynchronous Rectification Mode (AAR Mode)
图 8-35 shows the operation of AAR in PWM mode. As shown in this figure, a PWM is applied in a synchronous
rectification to the high-side and low-side FETs. During the low-side FET conduction, for lower inductance
motors, the current can decay to zero and becomes negative since low side FET is in on-state. This creates a
negative torque on the BLDC motor operation. When AAR mode is enabled, the current during the decay is
monitored and the low-side FET is turned off as soon as the current reaches near to zero. This saves the
negative current building in the BLDC motor which results in better noise performance and better thermal
management.
PWM_HS
(Applied)
&t
PWM_LS
(Applied)
&t
PWM_HS
(Actual)
&t
PWM_LS
(Actual)
&t
Ia
&t
AAR Mode Disabled
AAR Mode Enabled
图8-35. AAR in PWM Mode
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8.3.13 Cycle-by-Cycle Current Limit
The current-limit circuit activates if the current flowing through the low-side MOSFET exceeds the ILIMIT current.
This feature restricts motor current to less than the ILIMIT
.
The current-limit circuitry utilizes the current sense amplifier output of the three phases compared with the
voltage at ILIM pin. 图8-36 shows the implementation of current limit circuitry. As shown in this figure, the output
of current sense amplifiers is combined with star connected resistive network. This measured voltage VMEAS is
compared with the external reference voltage e VILIM pin to realize the current limit implementation. The relation
between current sensed on OUTX pin and VMEAS threshold is given as:
8
#8&&W
: ;
¤
A F k +176# + +176$ + +176% × )#+0 3o
8/'#5 = @
2
(5)
where
• AVDD is 3.3-V LDO output
• OUTX is current flowing into the low-side MOSFET
• GAIN is the CSA_GAIN setting
The ILIMIT threshold can be adjusted by configuring ILIM pin between AVDD/2 to (AVDD/2 - 0.4) V. AVDD/2 is
minimum value and when it is applied on ILIM pin cycle by cycle current limit is disabled, whereas maximum
threshold of 8 A can be configured by applying (AVDD/2 - 0.4) V on ILIM pin.
VM
AVDD
I/V Converter
SOA
OUTA
Sense
FET
GAIN
PGND
SOB
To PWM
VMEAS
VILIM
Controller
-
+
ILIM
SOC
图8-36. Current Limit Implementation
When then the current limit activates, the high-side FET is disabled until the beginning of the next PWM cycle as
shown in 图8-37. The low-side FETs can operate in brake mode or high-Z mode by configuring the ILIM_RECIR
bit in the SPI device variant.
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PWM
OUTx
ILIMIT
Bridge Operating in
Brake Mode
IBRIDGE
Time
图8-37. Cycle-by-Cycle Current-Limit Operation
图 8-38 shows the operation of driver in brake mode, where the current recirculates through low-side FETs while
the high-side FETs are disabled.
图8-39 shows the operation of driver in hi-Z mode, where the current recirculates through the body diodes of the
low-side FETs while the high-side FETs are disabled.
VM
VM
HB
HC
HA
HB
HC
HA
X
X
X
X
X
X
OUTA
OUTA
OUTB
OUTB
OUTC
OUTC
LA
LB
LC
LA
LB LC
X X X
图8-38. Brake State
图8-39. Coast State
备注
The current-limit circuit is ignored immediately after the PWM signal goes active for a short blanking
time to prevent false trips of the current-limit circuit.
备注
During the brake operation, a high-current can flow through the low-side FETs which can eventually
trigger the over current protection circuit. This allows the body-diode of the high-side FET to conduct
and pump brake energy to the VM supply rail.
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8.3.13.1 Cycle by Cycle Current Limit with 100% Duty Cycle Input
In case of 100% duty cycle applied on PWM input, there is no edge available to turn high-side FET back on. To
overcome this problem, DRV8316C has built in internal PWM clock which is used to turn high-side FET back on
once it is disabled after exceeding ILIMIT threshold. In SPI variant DRV8316C, this internal PWM clock can be
configured to either 20 kHz or 40 kHz through PWM_100_DUTY_SEL. In H/W variant DRV8316C PWM internal
clock is set to 20 kHz. 图8-40 shows operation with 100 % duty cycle.
PWM
Internal
PWM
OUTx
ILIMIT
Bridge Operating in
Brake Mode
Time
图8-40. Cycle-by-Cycle Current-Limit Operation with 100% PWM Duty Cycle
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8.3.14 Protections
The DRV8316C family of devices is protected against VM undervoltage, charge pump undervoltage, and
overcurrent events. 表8-8 summarizes various faults details.
表8-8. Fault Action and Response (SPI Devices)
FAULT
CONDITION
CONFIGURATION
REPORT
H-BRIDGE
LOGIC
RECOVERY
Automatic:
VVM > VUVLO_R
CLR_FLT, nSLEEP Reset Pulse (NPOR
bit)
VM undervoltage
(NPOR)
VVM < VUVLO
Hi-Z
Disabled
—
—
Automatic:
VAVDD > VAVDD_UV_R
CLR_FLT, nSLEEP Reset Pulse (NPOR
bit)
AVDD undervoltage
(NPOR)
VAVDD < VAVDD_UV
VFB_BK < VBK_UV
VCP < VCPUV
Hi-Z
Active
Hi-Z
Disabled
Active
—
—
—
—
Automatic:
VFB_BK > VBUCK_UV_R
CLR_FLT, nSLEEP Reset Pulse
(BUCK_UV bit)
Buck undervoltage
(BUCK_UV)
nFAULT
nFAULT
Automatic:
VVCP > VCPUV
CLR_FLT, nSLEEP Reset Pulse
(VCP_UV bit)
Charge pump
undervoltage
(VCP_UV)
Active
OVP_EN = 0b
OVP_EN = 1b
None
Active
Hi-Z
Active
Active
No action (OVP Disabled)
OverVoltage
Protection
(OVP)
Automatic:
VVM < VOVP
CLR_FLT, nSLEEP Reset Pulse (OVP bit)
VVM > VOVP
FAULT
Latched:
CLR_FLT, nSLEEP Reset Pulse (OCP
bits)
OCP_MODE = 00b
OCP_MODE = 01b
nFAULT
nFAULT
Hi-Z
Hi-Z
Active
Active
Retry:
tRETRY
Overcurrent
Protection
(OCP)
IPHASE > IOCP
Automatic:
CLR_FLT, nSLEEP Reset Pulse (OCP
bits)
OCP_MODE = 10b
OCP_MODE = 11b
—
nFAULT
None
Active
Active
Active
Active
Active
Active
No action
Buck Overcurrent
Protection
(BUCK_OCP)
Retry:
tRETRY
IBK > IBK_OC
nFAULT
Automatic:
CLR_FLT, nSLEEP Reset Pulse
(SPI_FLT bit)
SPI_FLT_REP = 0b
SPI_FLT_REP = 1b
nFAULT
Active
Active
SPI Error
(SPI_FLT)
SCLK fault and ADDR
fault
None
nFAULT
None
Active
Hi-Z
Active
Active
Active
No action
OTP Error
(OTP_ERR)
Latched:
OTP reading is erroneous
TJ > TOTW
—
Power Cycle, nSLEEP Reset Pulse
OTW_REP = 0b
Active
No action
Thermal warning
(OTW)
Automatic:
TJ < TOTW –TOTW_HYS
CLR_FLT, nSLEEP Pulse (OTW bit)
OTW_REP = 1b
nFAULT
nFAULT
nFAULT
Active
Hi-Z
Active
Active
Active
Automatic:
TJ < TTSD –TTSD_HYS
Thermal shutdown
(OTSD)
TJ > TTSD
—
—
Automatic:
TJ < TTSD_FET –TTSD_FET_HYS
CLR_FLT, nSLEEP Pulse (OTS bit)
Thermal shutdown
(OTSD_FET)
TJ > TTSD_FET
Hi-Z
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8.3.14.1 VM Supply Undervoltage Lockout (NPOR)
If at any time the input supply voltage on the VM pin falls lower than the VUVLO threshold (VM UVLO falling
threshold), all of the integrated FETs, driver charge-pump and digital logic controller are disabled as shown in 图
8-41. Normal operation resumes (driver operation) when the VM undervoltage condition is removed. The NPOR
bit is reset and latched low in the IC status (IC_STAT) register once the device presumes VM. The NPOR bit
remains in reset condition until cleared through the CLR_FLT bit or an nSLEEP pin reset pulse (tRST).
VUVLO (max) rising
VUVLO (min) rising
VUVLO (max) falling
VUVLO (min) falling
VVM
DEVICE ON
DEVICE OFF
DEVICE ON
Time
图8-41. VM Supply Undervoltage Lockout
8.3.14.2 AVDD Undervoltage Lockout (AVDD_UV)
If at any time the voltage on AVDD pin falls lower than the VAVDD_UV threshold, all of the integrated FETs, driver
charge-pump and digital logic controller are disabled. Normal operation resumes (driver operation) when the
AVDD undervoltage condition is removed. The NPOR bit is reset and latched low in the IC status (IC_STAT)
register once the device presumes VM. The NPOR bit remains in reset condition until cleared through the
CLR_FLT bit or an nSLEEP pin reset pulse (tRST).
8.3.14.3 BUCK Undervoltage Lockout (BUCK_UV)
If at any time the voltage on VFB_BK pin falls lower than the VBK_UV threshold, the integrated FETs of the buck
regulator are disabled while the driver FETs, charge pump, and digital logic control continue to operate normally.
The nFAULT pin is driven low in the event of a buck undervoltage fault, and the BK_FLT bit in IC_STAT register
is set in SPI devices. The FAULT and BUCK_UV bits are also latched high in the registers on SPI devices.
Normal operation starts again (buck regulator operation and the nFAULT pin is released) when the BUCK
undervoltage condition clears. The BK_FLT and BUCK_UV bits stay set until cleared through the CLR_FLT bit or
an nSLEEP pin reset pulse (tRST).
8.3.14.4 VCP Charge Pump Undervoltage Lockout (CPUV)
If at any time the voltage on the VCP pin (charge pump) falls lower than the VCPUV threshold voltage of the
charge pump, all of the integrated FETs are disabled and the nFAULT pin is driven low. The FAULT and VCP_UV
bits are also latched high in the registers on SPI devices. Normal operation starts again (driver operation and the
nFAULT pin is released) when the VCP undervoltage condition clears. The CPUV bit stays set until cleared
through the CLR_FLT bit or an nSLEEP pin reset pulse (tRST). The CPUV protection is always enabled in both
hardware and SPI device varaints.
8.3.14.5 Overvoltage Protection (OVP)
If at any time input supply voltage on the VM pins rises higher lower than the VOVP threshold voltage, all of the
integrated FETs are disabled and the nFAULT pin is driven low. The FAULT and OVP bits are also latched high
in the registers on SPI devices. Normal operation starts again (driver operation and the nFAULT pin is released)
when the OVP condition clears. The OVP bit stays set until cleared through the CLR_FLT bit or an nSLEEP pin
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reset pulse (tRST). Setting the OVP_EN bit high on the SPI devices enables this protection feature. The OVP
threshold is programmable on the SPI variant and can be set to 22-V or 34-V based on the OVP_SEL bit. In
hardware variant, the OVP protection is always enabled and set to a 34-V threshold.
VVM
VOVP (max) rising
VOVP (min) rising
VOVP (max) falling
VOVP (min) falling
DEVICE ON
DEVICE OFF
DEVICE ON
nFAULT
Time
图8-42. Over Voltage Protection
8.3.14.6 Overcurrent Protection (OCP)
A MOSFET overcurrent event is sensed by monitoring the current flowing through FETs. If the current across a
FET exceeds the IOCP threshold for longer than the tOCP deglitch time, an OCP event is recognized and action is
done according to the OCP_MODE bit. On hardware interface devices, the IOCP threshold is set via OCP/SR pin,
the tOCP_DEG is fixed at 0.6-µs, and the OCP_MODE bit is configured for latched shutdown. On SPI devices, the
IOCP threshold is set through the OCP_LVL SPI register, the tOCP_DEG is set through the OCP_DEG SPI register,
and the OCP_MODE bit can operate in four different modes: OCP latched shutdown, OCP automatic retry, OCP
report only, and OCP disabled.
8.3.14.6.1 OCP Latched Shutdown (OCP_MODE = 00b)
After a OCP event in this mode, all MOSFETs are disabled and the nFAULT pin is driven low. The FAULT, OCP,
and corresponding FET's OCP bits are latched high in the SPI registers. Normal operation starts again (driver
operation and the nFAULT pin is released) when the OCP condition clears and a clear faults command is issued
either through the CLR_FLT bit or an nSLEEP reset pulse (tRST).
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Peak Current due
to deglitch time
IOCP
IOUTx
tOCP
nFAULT Released
nFAULT Pulled High
Fault Condition
nFAULT
Clear Fault
Time
图8-43. Overcurrent Protection - Latched Shutdown Mode
8.3.14.6.2 OCP Automatic Retry (OCP_MODE = 01b)
After a OCP event in this mode, all the FETs are disabled and the nFAULT pin is driven low. The FAULT, OCP,
and corresponding FET's OCP bits are latched high in the SPI registers. Normal operation starts again
automatically (driver operation and the nFAULT pin is released) after the tRETRY time elapses. After the tRETRY
time elapses, the FAULT, OCP, and corresponding FET's OCP bits stay latched until a clear faults command is
issued either through the CLR_FLT bit or an nSLEEP reset pulse (tRST).
Peak Current due
to deglitch time
IOCP
IOUTx
tRETRY
tOCP
nFAULT Released
nFAULT Pulled High
Fault Condition
nFAULT
Time
图8-44. Overcurrent Protection - Automatic Retry Mode
8.3.14.6.3 OCP Report Only (OCP_MODE = 10b)
No protective action occurs after a OCP event in this mode. The overcurrent event is reported by driving the
nFAULT pin low and latching the FAULT, OCP, and corresponding FET's OCP bits high in the SPI registers. The
DRV8316C continues to operate as usual. The external controller manages the overcurrent condition by acting
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appropriately. The reporting clears (nFAULT pin is released) when the OCP condition clears and a clear faults
command is issued either through the CLR_FLT bit or an nSLEEP reset pulse (tRST).
8.3.14.6.4 OCP Disabled (OCP_MODE = 11b)
No action occurs after a OCP event in this mode.
8.3.14.7 Buck Overcurrent Protection
A buck overcurrent event is sensed by monitoring the current flowing through buck regulator’s FETs. If the
current across the buck regulator FET exceeds the IBK_OCP threshold for longer than the tBK_OCP deglitch time,
an OCP event is recognized. The buck OCP mode is configured in automatic retry setting. In this setting, after a
buck OCP event is detected, all the buck regulator’s FETs are disabled and the nFAULT pin is driven low. The
FAULT, BK_FLT, and BUCK_OCP bits are latched high in the SPI registers. Normal operation starts again
automatically (driver operation and the nFAULT pin is released) after the tBK_RETRY time elapses. The FAULT,
BK_FLT, and BUCK_OCP bits stay latched until the tRETRY period expires.
8.3.14.8 Thermal Warning (OTW)
If the die temperature exceeds the trip point of the thermal warning (TOTW), the OT bit in the IC status (IC_STAT)
register and OTW bit in the status register is set. The reporting of OTW on the nFAULT pin can be enabled by
setting the over-temperature warning reporting (OTW_REP) bit in the configuration control register. The device
performs no additional action and continues to function. In this case, the nFAULT pin releases when the die
temperature decreases below the hysteresis point of the thermal warning (TOTW_HYS). The OTW bit remains set
until cleared through the CLR_FLT bit or an nSLEEP reset pulse (tRST) and the die temperature is lower than
thermal warning trip (TOTW).
备注
Over temperature warning is not reported on nFAULT pin by default.
8.3.14.9 Thermal Shutdown (OTS)
DRV8316C has 2 die temperature sensor for thermal shutdown, one of them near FETs and other one in other
part of die.
8.3.14.9.1 OTS FET
If the die temperature near FET exceeds the trip point of the thermal shutdown limit (TTSD_FET), all the FETs are
disabled, the charge pump is shut down, and the nFAULT pin is driven low. In addition, the FAULT and OT bit in
the IC status (IC_STAT) register and OTS bit in the status register is set. Normal operation starts again (driver
operation and the nFAULT pin is released) when the overtemperature condition clears. The OTS bit stays
latched high indicating that a thermal event occurred until a clear fault command is issued either through the
CLR_FLT bit or an nSLEEP reset pulse (tRST). This protection feature cannot be disabled.
8.3.14.9.2 OTS (Non FET)
If the die temperature in the device exceeds the trip point of the thermal shutdown limit (TTSD), all the FETs are
disabled, the buck regulator disabled, the charge pump is shut down, and the nFAULT pin is driven low. In
addition, the FAULT and OT bit in the IC status (IC_STAT) register and OTS bit in the status register is set.
Normal operation starts again (driver operation and the nFAULT pin is released) when the overtemperature
condition clears. The OTS bit stays latched high indicating that a thermal event occurred until a clear fault
command is issued either through the CLR_FLT bit or an nSLEEP reset pulse (tRST). This protection feature
cannot be disabled.
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8.4 Device Functional Modes
8.4.1 Functional Modes
8.4.1.1 Sleep Mode
The nSLEEP pin manages the state of the DRV8316C family of devices. When the nSLEEP pin is low, the
device goes to a low-power sleep mode. In sleep mode, all FETs are disabled, current sense amplifiers are
disabled, buck regulator (if present) is disabled, the charge pump is disabled, the AVDD regulator is disabled,
and the SPI bus is disabled. The tSLEEP time must elapse after a falling edge on the nSLEEP pin before the
device goes to sleep mode. The device comes out of sleep mode automatically if the nSLEEP pin is pulled high.
The tWAKE time must elapse before the device is ready for inputs.
In sleep mode and when VVM < VUVLO, all MOSFETs are disabled.
备注
During power up and power down of the device through the nSLEEP pin, the nFAULT pin is held low
as the internal regulators are enabled or disabled. After the regulators have enabled or disabled, the
nFAULT pin is automatically released. The duration that the nFAULT pin is low does not exceed the
tSLEEP or tWAKE time.
备注
TI recommends to connect pull up on nFAULT even if it is not used to avoid undesirable entry into
internal test mode. If external supply is used to pull up nFAULT, ensure that it is pulled to >2.2 V on
power up or the device will enter internal test mode.
8.4.1.2 Operating Mode
When the nSLEEP pin is high and the VVM voltage is greater than the VUVLO voltage, the device goes to
operating mode. The tWAKE time must elapse before the device is ready for inputs. In this mode the charge
pump, AVDD regulator, buck regulator, and SPI bus are active.
8.4.1.3 Fault Reset (CLR_FLT or nSLEEP Reset Pulse)
In the case of device latched faults, the DRV8316C family of devices goes to a partial shutdown state to help
protect the power MOSFETs and system.
When the fault condition clears, the device can go to the operating state again by either setting the CLR_FLT bit
to 1b in the SPI variant or issuing a reset pulse to the nSLEEP pin on either variant. The nSLEEP reset pulse
(tRST) consists of a high-to-low-to-high transition on the nSLEEP pin. The low period of the sequence should fall
within the tRST time window or else the device will start the complete shutdown sequence (low power sleep
mode). The reset pulse has no effect on any of the regulators, device settings, or other functional blocks.
8.4.2 DRVOFF functionality
DRV8316C has capability to disable predriver and MOSFETs bypassing the digital through DRVOFF pin. When
DRVOFF pin is pulled high, all six MOSFETs are disabled. If nSLEEP is high when the DRVOFF pin is high, the
charge pump, AVDD regulator, buck regulator, and SPI bus are active and any driver-related faults such as OCP
will be inactive. DRVOFF pin independently disables MOSFETs which will stop motor commutation irrespective
of status of INHx and INLx input pins.
备注
Since DRVOFF pin independently disables MOSFET, it can trigger fault condition resulting in nFAULT
getting pulled low.
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8.5 SPI Communication
8.5.1 Programming
On DRV8316C SPI devices, an SPI bus is used to set device configurations, operating parameters, and read out
diagnostic information. The SPI operates in secondary mode and connects to a controller. The SPI input data
(SDI) word consists of a 16-bit word, with a 6-bit address and 8 bits of data. The SPI output consists of 16 bit
word, with a 8 bits of status information (STAT register) and 8-bit register data.
A valid frame must meet the following conditions:
• The SCLK pin should be low when the nSCS pin transitions from high to low and from low to high.
• The nSCS pin should be pulled high for at least 400 ns between words.
• When the nSCS pin is pulled high, any signals at the SCLK and SDI pins are ignored and the SDO pin is
placed in the Hi-Z state.
• Data is captured on the falling edge of the SCLK pin and data is propagated on the rising edge of the SCLK
pin.
• The most significant bit (MSB) is shifted in and out first.
• A full 16 SCLK cycles must occur for transaction to be valid.
• If the data word sent to the SDI pin is less than or more than 16 bits, a frame error occurs and the data word
is ignored.
• For a write command, the existing data in the register being written to is shifted out on the SDO pin following
the 8-bit status data.
The SPI registers are reset to the default settings on power up and when the device is enters sleep mode
8.5.1.1 SPI Format
The SDI input data word is 16 bits long and consists of the following format:
• 1 read or write bit, W (bit B15)
• 6 address bits, A (bits B14 through B9)
• Parity bit, P (bit B8). Parity bit is set such that the SDI input data word has even number of 1s and 0s
• 8 data bits, D (bits B7 through B0)
The SDO output data word is 16 bits long and the first 8 bits are status bits. The data word is the content of the
register being accessed.
For a write command (W0 = 0), the response word on the SDO pin is the data currently in the register being
written to.
For a read command (W0 = 1), the response word is the data currently in the register being read.
nSCS
A1
S1
D1
R1
SDI
SDO
图8-45.
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Master Controller
Device
MCLK
MO
MI
SCLK
SDI
SPI
Communication
SDO
SPI
Communication
nSCS
CS
图8-46.
表8-9. SDI Input Data Word Format
R/W
ADDRESS
Parity
DATA
B15
W0
B14
A5
B13
A4
B12
A3
B11
A2
B10
A1
B9
A0
B8
P
B7
D7
B6
D6
B5
D5
B4
D4
B3
D3
B2
D2
B1
D1
B0
D0
表8-10. SDO Output Data Word Format
STATUS
DATA
B15
S7
B14
S6
B13
S5
B12
S4
B11
S3
B10
S2
B9
S1
B8
S0
B7
D7
B6
D6
B5
D5
B4
D4
B3
D3
B2
D2
B1
D1
B0
D0
nSCS
SCLK
SDI
X
Z
MSB
MSB
LSB
LSB
X
Z
SDO
Capture
Point
Propagate
Point
图8-47. SPI Secondary Timing Diagram
SPI Error Handling
SPI Frame Error (SPI_SCLK_FLT: If the nSCS gets deasserted before the end of 16-bit frame, SPI frame error
is detected and SPI_SCLK_FLT bit is set in STAT2. The SPI_SCLK_FLT status bit is latched and can be cleared
when a clear faults command is issued either through the CLR_FLT bit or an nSLEEP reset pulse
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SPI Address Error (SPI_ADDR_FLT): If an invalid address is provided in the ADDR field of the input SPI data
on SDI, SPI address error is detected and SPI_ADDR_FLT bit in STAT2 is set. Invalid address is any address
that is not defined in Register Map i.e. address not falling in the range of address 0x0 to 0xC. The
SPI_ADDR_FLT status bit is latched and can be cleared when a clear faults command is issued either through
the CLR_FLT bit or an nSLEEP reset pulse
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8.6 Register Map
8.6.1 STATUS Registers
表8-11 lists the memory-mapped registers for the STATUS registers. All register offset addresses not listed in 表
8-11 should be considered as reserved locations and the register contents should not be modified.
表8-11. STATUS Registers
Offset Acronym
Register Name
IC Status Register
Status Register 1
Status Register 2
Section
节8.6.1.1
节8.6.1.2
节8.6.1.3
0h
1h
2h
IC Status Register
Status Register 1
Status Register 2
Complex bit access types are encoded to fit into small table cells. 表 8-12 shows the codes that are used for
access types in this section.
表8-12. STATUS Access Type Codes
Access Type
Code
Description
Read Type
R
R
Read
R-0
R
Read
-0
Returns 0s
Reset or Default Value
-n
Value after reset or the default
value
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8.6.1.1 IC Status Register (Offset = 0h) [Reset = 00h]
IC Status Register is shown in 图8-48 and described in 表8-13.
Return to the 表8-11.
图8-48. IC Status Register
7
6
5
4
3
2
1
0
BK_FLT
R-0h
SPI_FLT
R-0h
OCP
R-0h
NPOR
R-0h
OVP
R-0h
OT
FAULT
R-0h
R-0h
表8-13. IC Status Register Field Descriptions
Bit
Field
Type
Reset
Description
6
5
4
3
2
1
0
BK_FLT
SPI_FLT
OCP
R
0h
Buck Fault Bit
0h = No buck regulator fault condition is detected
1h = Buck regulator fault condition is detected
R
R
R
R
R
R
0h
0h
0h
0h
0h
0h
SPI Fault Bit
0h = No SPI fault condition is detected
1h = SPI Fault condition is detected
Over Current Protection Status Bit
0h = No overcurrent condition is detected
1h = Overcurrent condition is detected
NPOR
OVP
Supply Power On Reset Bit
0h = Power on reset condition is detected on VM
1h = No power-on-reset condition is detected on VM
Supply Overvoltage Protection Status Bit
0h = No overvoltage condition is detected on VM
1h = Overvoltage condition is detected on VM
OT
Overtemperature Fault Status Bit
0h = No overtemperature warning / shutdown is detected
1h = Overtemperature warning / shutdown is detected
FAULT
Device Fault Bit
0h = No fault condition is detected
1h = Fault condition is detected
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8.6.1.2 Status Register 1 (Offset = 1h) [Reset = 00h]
Status Register 1 is shown in 图8-49 and described in 表8-14.
Return to the 表8-11.
图8-49. Status Register 1
7
6
5
4
3
2
1
0
OTW
R-0h
OTS
R-0h
OCP_HC
R-0h
OCL_LC
R-0h
OCP_HB
R-0h
OCP_LB
R-0h
OCP_HA
R-0h
OCP_LA
R-0h
表8-14. Status Register 1 Field Descriptions
Bit
Field
Type
Reset
Description
7
OTW
R
0h
Overtemperature Warning Status Bit
0h = No overtemperature warning is detected
1h = Overtemperature warning is detected
6
5
4
3
2
1
0
OTS
R
R
R
R
R
R
R
0h
0h
0h
0h
0h
0h
0h
Overtemperature Shutdown Status Bit
0h = No overtemperature shutdown is detected
1h = Overtemperature shutdown is detected
OCP_HC
OCL_LC
OCP_HB
OCP_LB
OCP_HA
OCP_LA
Overcurrent Status on High-side switch of OUTC
0h = No overcurrent detected on high-side switch of OUTC
1h = Overcurrent detected on high-side switch of OUTC
Overcurrent Status on Low-side switch of OUTC
0h = No overcurrent detected on low-side switch of OUTC
1h = Overcurrent detected on low-side switch of OUTC
Overcurrent Status on High-side switch of OUTB
0h = No overcurrent detected on high-side switch of OUTB
1h = Overcurrent detected on high-side switch of OUTB
Overcurrent Status on Low-side switch of OUTB
0h = No overcurrent detected on low-side switch of OUTB
1h = Overcurrent detected on low-side switch of OUTB
Overcurrent Status on High-side switch of OUTA
0h = No overcurrent detected on high-side switch of OUTA
1h = Overcurrent detected on high-side switch of OUTA
Overcurrent Status on Low-side switch of OUTA
0h = No overcurrent detected on low-side switch of OUTA
1h = Overcurrent detected on low-side switch of OUTA
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8.6.1.3 Status Register 2 (Offset = 2h) [Reset = 00h]
Status Register 2 is shown in 图8-50 and described in 表8-15.
Return to the 表8-11.
图8-50. Status Register 2
7
6
5
4
3
2
1
0
RESERVED
OTP_ERR
BUCK_OCP
BUCK_UV
VCP_UV
SPI_PARITY SPI_SCLK_FLT SPI_ADDR_FL
T
R-0-0h
R-0h
R-0h
R-0h
R-0h
R-0-0h
R-0h
R-0h
表8-15. Status Register 2 Field Descriptions
Bit
7
Field
RESERVED
Type
R-0
R
Reset
Description
0h
Reserved
6
OTP_ERR
0h
One Time Programmabilty Error
0h = No OTP error is detected
1h = OTP Error is detected
5
4
3
2
1
0
BUCK_OCP
BUCK_UV
R
0h
0h
0h
0h
0h
0h
Buck Regulator Overcurrent Staus Bit
0h = No buck regulator overcurrent is detected
1h = Buck regulator overcurrent is detected
R
Buck Regulator Undervoltage Staus Bit
0h = No buck regulator undervoltage is detected
1h = Buck regulator undervoltage is detected
VCP_UV
R
Charge Pump Undervoltage Status Bit
0h = No charge pump undervoltage is detected
1h = Charge pump undervoltage is detected
SPI_PARITY
SPI_SCLK_FLT
SPI_ADDR_FLT
R-0
R
SPI Parity Error Bit
0h = No SPI parity error is detected
1h = SPI parity error is detected
SPI Clock Framing Error Bit
0h = No SPI clock framing error is detected
1h = SPI clock framing error is detected
R
SPI Address Error Bit
0h = No SPI address fault is detected (due to accessing non-user
register)
1h = SPI address fault is detected
8.6.2 CONTROL Registers
表 8-16 lists the memory-mapped registers for the CONTROL registers. All register offset addresses not listed in
表8-16 should be considered as reserved locations and the register contents should not be modified.
表8-16. CONTROL Registers
Offset Acronym
Register Name
Section
节8.6.2.1
节8.6.2.2
节8.6.2.3
节8.6.2.4
节8.6.2.5
节8.6.2.6
节8.6.2.7
3h
4h
5h
6h
7h
8h
Ch
Control Register 1
Control Register 1
Control Register 2
Control Register 3
Control Register 4
Control Register 5
Control Register 6
Control Register 10
Control Register 2
Control Register 3
Control Register 4
Control Register 5
Control Register 6
Control Register 10
Complex bit access types are encoded to fit into small table cells. 表 8-17 shows the codes that are used for
access types in this section.
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表8-17. CONTROL Access Type Codes
Access Type
Code
Description
Read Type
R
R
Read
R-0
R
Read
-0
Returns 0s
Write Type
W
W
Write
W1C
W
Write
1C
1 to clear
WAPU
W
Write
APU
Atomic write with password
unlock
Reset or Default Value
-n
Value after reset or the default
value
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8.6.2.1 Control Register 1 (Offset = 3h) [Reset = 00h]
Control Register 1 is shown in 图8-51 and described in 表8-18.
Return to the 表8-16.
图8-51. Control Register 1
7
6
5
4
3
2
1
0
RESERVED
R-0-0h
REG_LOCK
R/WAPU-0h
表8-18. Control Register 1 Field Descriptions
Bit
Field
Type
Reset
Description
7-3
2-0
RESERVED
REG_LOCK
R-0
0h
Reserved
R/WAPU
0h
Register Lock Bits
0h = No effect unless locked or unlocked
1h = No effect unless locked or unlocked
2h = No effect unless locked or unlocked
3h = Write 011b to this register to unlock all registers
4h = No effect unless locked or unlocked
5h = No effect unless locked or unlocked
6h = Write 110b to lock the settings by ignoring further register writes
except to these bits and address 0x03h bits 2-0.
7h = No effect unless locked or unlocked
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8.6.2.2 Control Register 2 (Offset = 4h) [Reset = 60h]
Control Register 2 is shown in 图8-52 and described in 表8-19.
Return to the 表8-16.
图8-52. Control Register 2
7
6
5
4
3
2
1
0
RESERVED
R/W-1h
SDO_MODE
R/W-1h
SLEW
PWM_MODE
R/W-0h
CLR_FLT
W1C-0h
R/W-0h
表8-19. Control Register 2 Field Descriptions
Bit
Field
Type
R/W
R/W
Reset
Description
7-6
5
RESERVED
SDO_MODE
1h
Reserved
1h
SDO Mode Setting
0h = SDO IO in Open Drain Mode
1h = SDO IO in Push Pull Mode
4-3
2-1
0
SLEW
R/W
R/W
W1C
0h
0h
0h
Slew Rate Settings
0h = Slew rate is 25 V/µs
1h = Slew rate is 50 V/µs
2h = Slew rate is 125 V/µs
3h = Slew rate is 200 V/µs
PWM_MODE
CLR_FLT
Device Mode Selection
0h = 6x mode
1h = 6x mode with current limit
2h = 3x mode
3h = 3x mode with current limit
Clear Fault
0h = No clear fault command is issued
1h = To clear the latched fault bits. This bit automatically resets after
being written.
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8.6.2.3 Control Register 3 (Offset = 5h) [Reset = 46h]
Control Register 3 is shown in 图8-53 and described in 表8-20.
Return to the 表8-16.
图8-53. Control Register 3
7
6
5
4
3
2
1
0
RESERVED
RESERVED
RESERVED
PWM_100_DU
TY_SEL
OVP_SEL
OVP_EN
SPI_FLT_REP
OTW_REP
R-0-0h
R/W-1h
R/W-0h
R/W-0h
R/W-0h
R/W-1h
R/W-1h
R/W-0h
表8-20. Control Register 3 Field Descriptions
Bit
7
Field
RESERVED
Type
Reset
Description
Reserved
Reserved
Reserved
R-0
0h
6
RESERVED
R/W
R/W
R/W
1h
5
RESERVED
0h
4
PWM_100_DUTY_SEL
0h
Freqency of PWM at 100% Duty Cycle
0h = 20KHz
1h = 40KHz
3
2
1
0
OVP_SEL
OVP_EN
R/W
R/W
R/W
R/W
0h
1h
1h
0h
Overvoltage Level Setting
0h = VM overvoltage level is 34-V
1h = VM overvoltage level is 22-V
Overvoltage Enable Bit
0h = Overvoltage protection is disabled
1h = Overvoltage protection is enabled
SPI_FLT_REP
OTW_REP
SPI Fault Reporting Disable Bit
0h = SPI fault reporting on nFAULT pin is enabled
1h = SPI fault reporting on nFAULT pin is disabled
Overtemperature Warning Reporting Bit
0h = Over temperature reporting on nFAULT is disabled
1h = Over temperature reporting on nFAULT is enabled
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8.6.2.4 Control Register 4 (Offset = 6h) [Reset = 10h]
Control Register 4 is shown in 图8-54 and described in 表8-21.
Return to the 表8-16.
图8-54. Control Register 4
7
6
5
4
3
2
1
0
DRV_OFF
R/W-0h
OCP_CBC
R/W-0h
OCP_DEG
R/W-1h
OCP_RETRY
R/W-0h
OCP_LVL
R/W-0h
OCP_MODE
R/W-0h
表8-21. Control Register 4 Field Descriptions
Bit
Field
Type
Reset
Description
7
DRV_OFF
OCP_CBC
OCP_DEG
R/W
0h
Driver OFF Bit
0h = No Action
1h = Hi-Z FETs
6
R/W
R/W
0h
1h
OCP PWM Cycle Operation Bit
0h = OCP clearing in PWM input cycle change is disabled
1h = OCP clearing in PWM input cycle change is enabled
5-4
OCP Deglitch Time Settings
0h = OCP deglitch time is 0.2 µs
1h = OCP deglitch time is 0.6 µs
2h = OCP deglitch time is 1.25 µs
3h = OCP deglitch time is 1.6 µs
3
2
OCP_RETRY
OCP_LVL
R/W
R/W
R/W
0h
0h
0h
OCP Retry Time Settings
0h = OCP retry time is 5 ms
1h = OCP retry time is 500 ms
Overcurrent Level Setting
0h = OCP level is 16 A
1h = OCP level is 24 A
1-0
OCP_MODE
OCP Fault Options
0h = Overcurrent causes a latched fault
1h = Overcurrent causes an automatic retrying fault
2h = Overcurrent is report only but no action is taken
3h = Overcurrent is not reported and no action is taken
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8.6.2.5 Control Register 5 (Offset = 7h) [Reset = 00h]
Control Register 5 is shown in 图8-55 and described in 表8-22.
Return to the 表8-16.
图8-55. Control Register 5
7
6
5
4
3
2
1
0
RESERVED
R/W-0h
ILIM_RECIR
R/W-0h
RESERVED
R/W-0h
RESERVED
R/W-0h
EN_AAR
R/W-0h
EN_ASR
R/W-0h
CSA_GAIN
R/W-0h
表8-22. Control Register 5 Field Descriptions
Bit
7
Field
RESERVED
Type
R/W
R/W
Reset
Description
0h
Reserved
6
ILIM_RECIR
0h
Current Limit Recirculation Settings
0h = Current recirculation through FETs (Brake Mode)
1h = Current recirculation through diodes (Coast Mode)
5
4
3
RESERVED
RESERVED
EN_AAR
R/W
R/W
R/W
0h
0h
0h
Reserved
Reserved
Active Asynshronous Rectification Enable Bit
0h = AAR mode is disabled
1h = AAR mode is enabled
2
EN_ASR
R/W
R/W
0h
0h
Active Synchronous Rectification Enable Bit
0h = ASR mode is disabled
1h = ASR mode is enabled
1-0
CSA_GAIN
Current Sense Amplifier's Gain Settings
0h = CSA gain is 0.15 V/A
1h = CSA gain is 0.3 V/A
2h = CSA gain is 0.6 V/A
3h = CSA gain is 1.2 V/A
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8.6.2.6 Control Register 6 (Offset = 8h) [Reset = 00h]
Control Register 6 is shown in 图8-56 and described in 表8-23.
Return to the 表8-16.
图8-56. Control Register 6
7
6
5
4
3
2
1
0
RESERVED
R-0-0h
RESERVED
R/W-0h
BUCK_PS_DIS
R/W-0h
BUCK_CL
R/W-0h
BUCK_SEL
R/W-0h
BUCK_DIS
R/W-0h
表8-23. Control Register 6 Field Descriptions
Bit
Field
Type
Reset
Description
Reserved
Reserved
7-6
5
RESERVED
RESERVED
BUCK_PS_DIS
R-0
0h
R/W
R/W
0h
4
0h
Buck Power Sequencing Disable Bit
0h = Buck power sequencing is enabled
1h = Buck power sequencing is disabled
3
BUCK_CL
R/W
R/W
0h
0h
Buck Current Limit Setting
0h = Buck regulator current limit is set to 600 mA
1h = Buck regulator current limit is set to 150 mA
2-1
BUCK_SEL
Buck Voltage Selection
0h = Buck voltage is 3.3 V
1h = Buck voltage is 5.0 V
2h = Buck voltage is 4.0 V
3h = Buck voltage is 5.7 V
0
BUCK_DIS
R/W
0h
Buck Disable Bit
0h = Buck regulator is enabled
1h = Buck regulator is disabled
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8.6.2.7 Control Register 10 (Offset = Ch) [Reset = 00h]
Control Register 10 is shown in 图8-57 and described in 表8-24.
Return to the 表8-16.
图8-57. Control Register 10
7
6
5
4
3
2
1
0
RESERVED
R-0-0h
DLYCMP_EN
R/W-0h
DLY_TARGET
R/W-0h
表8-24. Control Register 10 Field Descriptions
Bit
Field
Type
Reset
Description
7-5
4
RESERVED
R-0
0h
Reserved
DLYCMP_EN
R/W
0h
Driver Delay Compensation enable
0h = Disable
1h = Enable
3-0
DLY_TARGET
R/W
0h
Delay Target for Driver Delay Compensation
0h = 0 us
1h = 0.4 us
2h = 0.6 us
3h = 0.8 us
4h = 1 us
5h = 1.2 us
6h = 1.4 us
7h = 1.6 us
8h = 1.8 us
9h = 2 us
Ah = 2.2 us
Bh = 2.4 us
Ch = 2.6 us
Dh = 2.8 us
Eh = 3 us
Fh = 3.2 us
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9 Application and Implementation
备注
以下应用部分中的信息不属于TI 器件规格的范围,TI 不担保其准确性和完整性。TI 的客 户应负责确定
器件是否适用于其应用。客户应验证并测试其设计,以确保系统功能。
9.1 Application Information
The DRV8316C can be used to drive Brushless-DC motors. The following design procedure can be used to
configure the DRV8316C.
VVM
+
47 nF
CPL
1 µF
VM
0.1 µF
10 µF
0.1 µF
CPH
CP
VCC
Voltage
Supervisor
VREF
AVDD
Microcontroller
CAVDD
AGND
ADC
ADC
1000
30 pF
1000
30 pF
1000
30 pF
SOC
SOB
Replace Resistor (RBK) with Inductor
(LBK) for larger external load or to
reduce power dissipaꢀon
LBK
Current
Sensing
ADC
CSA
External
Load
SW_BK
RBK
CBK
DRV8316CR
GND_BK
SOA
ADC
GP-I
RPU1
FB_BK
nFAULT
nSLEEP
DRVOFF
Driver
Control
Sleep Control
GP-O
INHA
INLA
INHB
INLB
INHC
INLC
GP-O
GP-O
Hall
Sensors
(Optional)
OUTA
OUTB
PWM
Control
Module
PWM
Control
Input
GP-O
GP-O
GP-O
GP-O
A
B
B
SDO
GP-I
GP-O
GP-O
GP-O
nSCS
SCLK
SPI
SPI
OUTC
PGND
SDI
Hall Input
GP-I
GP-I
GP-I
图9-1. Primary Application Schematics
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9.2 Typical Applications
9.2.1 Three-Phase Brushless-DC Motor Control
In this application, the DRV8316C is used to drive a Brushless-DC motor.
9.2.1.1 Detailed Design Procedure
表9-1 lists the example input parameters for the system design.
表9-1. Design Parameters
DESIGN PARAMETERS
REFERENCE
EXAMPLE VALUE
Supply voltage
VVM
IRMS
IPEAK
fPWM
SR
24 V
3 A
Motor RMS current
Motor peak current
8 A
PWM Frequency
50 kHz
Slew Rate Setting
200 V/µs
3.3 V
Buck regulator output voltage
ADC reference voltage
System ambient temperature
VBK
VVREF
TA
3.0 V
–20°C to +105°C
9.2.1.1.1 Motor Voltage
Brushless-DC motors are typically rated for a certain voltage (for example 12 V or 24 V). Operating a motor at a
higher voltage corresponds to a lower drive current to obtain the same motor power. Operating at lower voltages
generally allows for more accurate control of phase currents. The DRV8316C functions down to a supply of 4.5
V. A higher operating voltage also corresponds to a higher obtainable rpm. The DRV8316C allows for a range of
possible operating voltages because of a maximum VM rating of 40 V.
9.2.1.1.2 Using Active Demagnetization
Active demagnetization reduces power losses in the device by turning on the MOSFETs automatically when the
body diode starts conducting to reduce diode conduction losses. It is used in trapezoidal commutation when
switching commutation states (turning a high-side MOSFET off and another high-side MOSFET on while keeping
a low-side MOSFET on). Active demagnetization is enabled when EN_ASR and EN_AAR bits are set in the SPI
variant or OCP/SR pin is set to Mode 3 or Mode 4 in the H/W variant.
When switching commutation states with active demagnetization disabled, dead time is inserted and the low-side
MOSFET’s body diode conducts while turning another high-side MOSFET on to continue sourcing current
through the motor. This conduction period causes higher power losses due to the forward-bias voltage of the
diode and slower dissipation of current. 图9-2 shows the body diode conducting when switching commutation
states.
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图9-2. Active demagnetization disabled in DRV8316C
When active demagnetization is enabled, the AD_HS and AD_LS comparators detect when the sense FET
voltage is higher or lower than the programmed threshold. After the dead time period, if the threshold is
exceeded for a fixed amount of time, the body diode is conducting and the logic core turns the low-side FET on
to provide a conduction path with smaller power losses. Once the VDS voltage is below the comparator
threshold, the MOSFET turns off and current briefly conducts through the body diode until the current completely
decays to zero. This is shown in 图9-3.
图9-3. Active demagnetization enabled in DRV8316C
9.2.1.1.3 Driver Propagation Delay and Dead Time
Driver propagation delay (tPD) and dead time (tdead) is specified with a typical and maximum value, but not with a
minimum value. This is due to the direction of current at the OUTx pin when synchronous inputs are switching.
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Driver propagation delay and dead time can be shorter than typical values due to slower internal turn-ons of the
high-side or low-side internal MOSFETs to avoid internal dV/dt coupling.
For more information and examples of how propagation delay and dead time differs for input PWM and output
configurations, please visit the Delay and Dead Time in Integrated MOSFET Drivers application note.
The dead time from the microcontroller’s PWM outputs can be used as an extra precaution in addition to the
DRV8316C internal shoot-through protection. This creates a condition where internal logic prioritizes the MCU
dead time or driver dead time based on their durations.
If the MCU dead time is less than the driver dead time, the driver will compensate and make the true output dead
time the value specified by the DRV8316C. If the MCU inserted dead time is larger than the driver dead time,
then the DRV8316C will adjust accordingly to the MCU dead time as shown in the table below.
A summary of the device delay times with respect to synchronous inputs INHx and INLx, OUTx current direction,
and inserted MCU dead time are shown in 表9-2.
表9-2. Summary of delay times in integrated FET devices depending on inputs and output current
direction
OUTx current
direction
INHx
INLx
Propagation
Dead Time (tdead) Inserted MCU dead time (tdead(MCU))
Delay (tPD
)
tdead(MCU) < tdead tdead(MCU) > tdead
Out of OUTx
Into OUTx
Rising
Falling
Rising
Falling
Falling
Rising
Falling
Rising
Typical
Typical
Output dead time Output dead time
= tdead
Output dead time Output dead time
< tdead < tdead(MCU)
Output dead time Output dead time
< tdead < tdead(MCU)
Output dead time Output dead time
= tdead = tdead(MCU)
= tdead(MCU)
Smaller than
typical
Smaller than
typical
Smaller than
typical
Smaller than
typical
Typical
Typical
9.2.1.1.4 Using Delay Compensation
Differences in delays of dead time and propagation delay can cause mismatch in the output timings of PWMs,
which can lead to duty cycle distortion. In order to accommodate differences in propagation delay between
various input conditions, the DRV8316C integrates a Delay Compensation feature.
Delay Compensation is used to match delay times for currents going into and out of phase by adding a variable
delay time (tvar) to match a preset target delay time. This delay time is configurable in SPI devices, and it is
recommended in the datasheets to choose a target delay time that is equal to the propagation delay time plus
the driver dead time (tpd + tdead).
For an example of Delay Compensation implementation, please visit the Delay and Dead Time in Integrated
MOSFET Drivers application note.
9.2.1.1.5 Using the Buck Regulator
In DRV8316C, the buck regulator components must be populated whether the buck is used or unused.
If unused, Resistor Mode should be configured by placing a small value resistor of 22-Ω for RBK and a 10-V
rated, 22-µF capacitor for CBK to minimize board space and reduce component cost. To disable the buck
regulator, set the BUCK_DIS in the SPI variant. The buck cannot be disabled in the Hardware variant.
If the buck regulator is used, either the Inductor or Resistor Mode can be selected. Inductor Mode allows a 22-
µH or 47-µH inductor be used for LBK. CBK is recommended to be 22-µF. Ensure an appropriate inductor is
chosen to allow for maximum peak saturation current at a 20% inductance drop since the buck can supply up to
600-mA external current.
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Resistor Mode allows for power to be dissipated in an external resistor if the load requirement is less than 40-
mA. Ensure the resistor is rated for the power dissipation required at worst case VM voltage dropout. See 方程式
6, 方程式 7, and 方程式 8 to calculate the resistor power rating required for a 24-V rated system, 3.3V buck
output voltage, and 20-mA load current.
P
P
P
> V − V
× I
BK
(6)
(7)
(8)
R
M
BK
BK
BK
>
24V − 3.3V × 20mA
R
> 0.434W
R_BK
9.2.1.1.6 Current Sensing and Output Filtering
The SOx pins are typically sampled by an analog-to-digital converter in the MCU to calculate the phase current.
Phase current calculations are used for closed-loop feedback such as Field-oriented control.
An example calculation for phase current is shown in 方程式 9, 方程式 10, and 方程式 11 for a system using
VREF = 3.0V, GAIN = 0.15 V/A, and a SOx voltage of 1.2V.
VREF
2
SOx =
1.2V =
± GAIN × I
(9)
OUTx
3.0V
2
± 0.15 V/A × I
(10)
(11)
OUTx
I
= − 2.0 A
OUTx
Sometimes high frequency noise can appear at the SOx signals based on voltage ripple at VREF, added
inductance at the SOx traces, or routing of SOx traces near high frequency components. It is recommended to
add a low-pass RC filter close to the MCU with cutoff frequency at least 10 times the PWM switching frequency
for trapezoidal commutation and 100 times the PWM switching frequency for sinusoidal commutation to filter
high frequency noise. A recommended RC filter is 330-ohms, 22-pF to add minimal parallel capacitance to the
ADC and current mirroring circuitry. The cutoff frequency for the low-pass RC filter is in 方程式12.
1
f =
(12)
c
2πRC
9.2.1.2 Application Curves
图9-4. Device powerup with VM
图9-5. Device powerup with nSLEEP
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图9-6. Driver PWM operation with feedback
图9-7. Power management
图9-8. Driver PWM with active demagnetization
图9-9. Driver delay compensation (1.8 μs)
(ASR and AAR)
9.2.2 Three-Phase Brushless-DC Motor Control With Current Limit
In this application, the DRV8316C is used to drive a brushless-DC motor with current limit up to 100% duty cycle.
The following design procedure can be used to configure the DRV8316C in current limit mode.
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9.2.2.1 Block Diagram
VVM
+
47 nF
CPL
1 µF
VM
0.1 µF
10 µF
0.1 µF
CPH
CP
VCC
AVDD
AVDD
AGND
Microcontroller
CAVDD
RILIM1
ILIM
RILIM2
Replace Resistor (RBK) with Inductor
(LBK) for larger external load or to
reduce power dissipaꢀon
SOC
SOB
SOA
CSA
LBK
External
Load
SW_BK
RPU1
RBK
CBK
DRV8316CR
GND_BK
nFAULT
GP-I
FB_BK
Sleep Control
nSLEEP
DRVOFF
GP-O
INHA
INLA
INHB
INLB
INHC
INLC
GP-O
GP-O
PWM
GP-O
PWM
Control
Input
Hall
Sensors
(Optional)
OUTA
OUTB
Control
Module
GP-O
GP-O
GP-O
A
B
B
SDO
GP-I
GP-O
GP-O
GP-O
nSCS
SCLK
SPI
SPI
OUTC
PGND
SDI
Hall Input
GP-I
GP-I
GP-I
图9-10. Alternate Application - BLDC Motor Control with Current Limit
9.2.2.2 Detailed Design Procedure
表9-3 lists the example input parameters for the system design.
表9-3. Design Parameters
DESIGN PARAMETERS
REFERENCE
EXAMPLE VALUE
24 V
Supply voltage
VVM
IPEAK
fPWM
SR
Motor peak current
PWM Frequency
2 A
50 kHz
Slew Rate Setting
200 V/µs
3.3 V
Buck regulator output voltage
VBK
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9.2.2.2.1 Motor Voltage
Brushless-DC motors are typically rated for a certain voltage (for example 12 V or 24 V). Operating a motor at a
higher voltage corresponds to a lower drive current to obtain the same motor power. Operating at lower voltages
generally allows for more accurate control of phase currents. The DRV8316C functions down to a supply of 4.5V.
A higher operating voltage also corresponds to a higher obtainable rpm. The DRV8316C allows for a range of
possible operating voltages because of a maximum VM rating of 40 V.
9.2.2.2.2 ILIM Implementation
The ILIM pin on the DRV8316C device is used to set a cycle-by-cycle current limit proportional to the voltage on
the ILIM pin. The analog voltage ILIM can be set using a digital-to-analog converter from an external
microcontroller or a resistor divider. Applying AVDD/2 on the ILIM pin disables the cycle-by-cycle current limit,
and applying (AVDD/2 - 0.4) V on ILIM pin sets the current limit at the maximum threshold of 8-A.
方程式 13, 方程式 14, and 方程式 15 shows how to set the ILIM voltage with respect to AVDD = 3.3V to set
cycle-by-cycle current limit to 2-A.
10 kΩ
1.55V = 3.3
ILIM V =
(13)
R
+ 10 kΩ
ILIM1
3.3
2
1.25 −
V
× 2 A + 1.65 V
(14)
(15)
8 A
ILIM V = 1.55V
Use 方程式 16 to calculate values for an AVDD-sourced resistor divider with resistors RILIM1 and RILIM2 to set
ILIM equal to the 2-A calculated current limit.
R
ILIM2
ILIM V = AVDD
(16)
R
+ R
ILIM1
ILIM2
To reduce current load on AVDD, RILIM2 is configured to be 10 kΩas shown in 方程式17 and 方程式18.
10 kΩ
1.55V = 3.3
(17)
(18)
R
+ 10 kΩ
ILIM1
R
= 11.29 kΩ
ILIM1
Cycle-by-cycle limit can also occur with 100% PWM duty cycle inputs using an internal PWM pulse to monitor
the current with ILIM. Setting the PWM_100_DUTY_SEL configures the frequency of the internal PWM pulse to
20kHz or 40kHz.
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9.2.2.3 Application Curves
图9-12. Device 100% Operation with Current
Chopping (Latched shutdown mode)
图9-11. Driver PWM with Current Limit
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9.2.3 Brushed-DC and Solenoid Load
In this application, the DRV8316C can be configured to drive a Brushed-DC motor and a solenoid load.
9.2.3.1 Block Diagram
VVM
+
47 nF
CPL
1 µF
VM
0.1 µF
10 µF
0.1 µF
CPH
CP
VCC
AVDD
AVDD
Microcontroller
CAVDD
RILIM1
AGND
ILIM
RILIM2
SOC
SOB
SOA
Replace Resistor (RBK) with Inductor
(LBK) for larger external load or to
reduce power dissipaꢀon
CSA
LBK
External
Load
SW_BK
RPU1
RBK
CBK
DRV8316CR
GND_BK
nFAULT
GP-I
FB_BK
nSLEEP
DRVOFF
Sleep Control
GP-O
INHA
INLA
INHB
INLB
INHC
INLC
GP-O
GP-O
PWM
Control
Module
PWM
Control
Input
OUTA
OUTB
GP-O
GP-O
GP-O
GP-O
M
VVM
SDO
GP-I
GP-O
GP-O
GP-O
nSCS
SCLK
SPI
SPI
Load
OUTC
PGND
SDI
图9-13. Alternate Application - Brushed DC Motor and Solenoid with Current Limit
9.2.3.2 Design Requirements
表9-4 gives design input parameters for system design.
表9-4. Design Parameters
DESIGN PARAMETER
REFERENCE
EXAMPLE VALUE
Brushed motor rms current
IRMS, BDC
1.0 A
2.0 A
0.5 A
1.0 A
Brushed motor peak current
Solenoid rms current
IPEAK, BDC
IRMS, SOL
Solenoid peak current
IPEAK, SOL
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9.2.3.2.1 Detailed Design Procedure
表9-5. Brushed-DC Control
Function
IN1
EN1
IN2
EN2
OUT1
OUT2
Forward
Reverse
1
0
1
1
0
1
1
1
H
L
L
H
Brake (low-side slow
decay)
0
1
0
1
L
L
High-side slow decay
Coast
1
1
0
1
1
0
H
Z
H
Z
X
X
表9-6. Solenoid Control (High-Side Load)
Function
IN3
EN3
OUT3
Coast / Off
On
X
0
1
0
1
1
Z
L
Brake
H
6x PWM mode or 3x PWM mode (with or without current limit) can be used to drive three solenoid loads
depending on the application.
A Brushed-DC motor can be connected to two OUTx phases to create an integrated full H-bridge configuration to
drive the motor. In 6x PWM mode or 3x PWM mode, current feedback can be monitored through the SOx pins of
the H-bridge when current is dissipated through that phase’s low-side FET during motor control. In 6x PWM
with Current Limit or 3x PWM with Current Limit mode, cycle-by-cycle current can be implemented by setting the
ILIM analog voltage to the proportional threshold.
Solenoid loads can be connected from OUTx to VM or GND to use the DRV8316C as a push-pull driver in 6x
PWM or 3x PWM mode. When the load is connected from OUTx to GND, current is sourced from the high-side
MOSFET and therefore current feedback or cycle-by-cycle current limit is not available. When the load is
connected from OUTx to VM, current feedback or cycle-by-cycle current limit can be used depending on the
mode configuration.
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9.2.4 Three Solenoid Loads
The DRV8316C can be used to drive three solenoid loads. The following design procedure can be used to
configure the DRV8316C for three solenoid loads.
9.2.4.1 Block Diagram
VVM
+
47 nF
CPL
1 µF
VM
0.1 µF
10 µF
0.1 µF
CPH
CP
VCC
AVDD
AVDD
Microcontroller
CAVDD
RILIM1
AGND
ILIM
RILIM2
SOC
SOB
SOA
Replace Resistor (RBK) with Inductor
(LBK) for larger external load or to
reduce power dissipaꢀon
CSA
LBK
External
Load
SW_BK
RPU1
RBK
CBK
DRV8316CR
GND_BK
nFAULT
GP-I
FB_BK
Sleep Control
nSLEEP
DRVOFF
GP-O
VVM
INHA
INLA
INHB
INLB
INHC
INLC
GP-O
GP-O
PWM
Control
Module
PWM
Control
Input
Load
OUTA
OUTB
GP-O
GP-O
GP-O
GP-O
VVM
Load
Load
VVM
SDO
GP-I
GP-O
GP-O
GP-O
nSCS
SCLK
SPI
SPI
OUTC
PGND
SDI
图9-14. Alternate Application - Three Solenoid Loads with Current Limit
9.2.4.2 Design Requirements
表9-7 gives design input parameters for system design.
表9-7. Design Parameters
DESIGN PARAMETER
REFERENCE
EXAMPLE VALUE
Solenoid rms current
IRMS, SOL
1.0 A
1.5 A
Solenoid peak current
IPEAK, SOL
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9.2.4.2.1 Detailed Design Procedure
表9-8. Solenoid Control (high-side load)
Function
IN2
EN2
OUT2
Coast / Off
On
X
0
1
0
1
1
Z
L
Brake
H
表9-9. Solenoid Control (low-side load)
Function
IN1
EN1
OUT1
Coast / Off
On
X
1
0
0
1
1
Z
H
L
Brake
6x PWM mode or 3x PWM mode (with or without current limit) can be used to drive three solenoid loads
depending on the application.
Solenoid loads can be connected from OUTx to VM or GND to use the DRV8316C as a push-pull driver in 6x
PWM or 3x PWM mode. When the load is connected from OUTx to GND, current is sourced from the high-side
MOSFET and therefore current feedback or cycle-by-cycle current limit is not available. When the load is
connected from OUTx to VM, current feedback or cycle-by-cycle current limit can be used depending on the
mode configuration.
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10 Power Supply Recommendations
10.1 Bulk Capacitance
Having an appropriate local bulk capacitance is an important factor in motor drive system design. It is generally
beneficial to have more bulk capacitance, while the disadvantages are increased cost and physical size.
The amount of local capacitance needed depends on a variety of factors, including:
• The highest current required by the motor system
• The capacitance and current capability of the power supply
• The amount of parasitic inductance between the power supply and motor system
• The acceptable voltage ripple
• The type of motor used (brushed dc, brushless DC, stepper)
• The motor braking method
The inductance between the power supply and the motor drive system limits the rate current can change from
the power supply. If the local bulk capacitance is too small, the system responds to excessive current demands
or dumps from the motor with a change in voltage. When adequate bulk capacitance is used, the motor voltage
remains stable and high current can be quickly supplied.
The data sheet generally provides a recommended value, but system-level testing is required to determine the
appropriate sized bulk capacitor.
Parasitic Wire
Inductance
Motor Drive System
Power Supply
VM
+
+
Motor Driver
œ
GND
Local
Bulk Capacitor
IC Bypass
Capacitor
图10-1. Example Setup of Motor Drive System With External Power Supply
The voltage rating for bulk capacitors should be higher than the operating voltage, to provide margin for cases
when the motor transfers energy to the supply.
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11 Layout
11.1 Layout Guidelines
The bulk capacitor should be placed to minimize the distance of the high-current path through the motor driver
device. The connecting metal trace widths should be as wide as possible, and numerous vias should be used
when connecting PCB layers. These practices minimize inductance and allow the bulk capacitor to deliver high
current.
Small-value capacitors such as the charge pump, AVDD, and VREF capacitors should be ceramic and placed
closely to device pins.
The high-current device outputs should use wide metal traces.
To reduce noise coupling and EMI interference from large transient currents into small-current signal paths,
grounding should be partitioned between PGND and AGND. TI recommends connecting all non-power stage
circuitry (including the thermal pad) to AGND to reduce parasitic effects and improve power dissipation from the
device. Optionally, GND_BK can be split. Ensure grounds are connected through net-ties or wide resistors to
reduce voltage offsets and maintain gate driver performance.
The device thermal pad should be soldered to the PCB top-layer ground plane. Multiple vias should be used to
connect to a large bottom-layer ground plane. The use of large metal planes and multiple vias helps dissipate
the I2 × RDS(on) heat that is generated in the device.
To improve thermal performance, maximize the ground area that is connected to the thermal pad ground across
all possible layers of the PCB. Using thick copper pours can lower the junction-to-air thermal resistance and
improve thermal dissipation from the die surface.
Separate the SW_BUCK and FB_BUCK traces with ground separation to reduce buck switching from coupling
as noise into the buck outer feedback loop. Widen the FB_BUCK trace as much as possible to allow for faster
load switching.
Recommended Layout Example for VQFN Package shows a layout example for the DRV8316C.
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11.2 Layout Example
Recommended Layout Example for VQFN Package
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11.3 Thermal Considerations
The DRV8316C has thermal shutdown (TSD) as previously described. A die temperature in excess of 150°C
(minimally) disables the device until the temperature drops to a safe level.
Any tendency of the device to enter thermal shutdown is an indication of excessive power dissipation, insufficient
heatsinking, or too high an ambient temperature.
11.3.1 Power Dissipation
The power loss in DRV8316C include standby power losses, LDO and Buck power losses, FET conduction and
switching losses, and diode losses. The FET conduction loss dominates the total power dissipation in
DRV8316C. At start-up and fault conditions, the output current is much higher than normal current; remember to
take these peak currents and their duration into consideration. The total device dissipation is the power
dissipated in each of the three half bridges added together. The maximum amount of power that the device can
dissipate depends on ambient temperature and heatsinking. Note that RDS,ON increases with temperature, so
as the device heats, the power dissipation increases. Take this into consideration when designing the PCB and
heatsinking.
A summary of equations for calculating each loss is shown below for trapezoidal controland field-oriented
control.
表11-1. DRV8316C Power Losses for Trapezoidal and Field-oriented Control
Loss type
Standby power
LDO
Trapezoidal
Field-oriented control
Pstandby = VM x IVM_TA
PLDO = (VM-VAVDD) x IAVDDD, if BUCK_PS_DIS = 1b
PLDO = (VBK-VAVDD) x IAVDDD, if BUCK_PS_DIS = 0b
FET conduction
FET switching
PCON = 2 x (IPK(trap))2 x Rds,on(TA)
PCON = 3 x ( IRMS(FOC))2 x Rds,on(TA)
PSW = IPK(trap) x VPK(trap) x trise/fall x fPWM
PSW = 3 x IRMS(FOC) x VPK(FOC) x trise/fall
fPWM
x
Diode
Buck
Pdiode = 2 x IPK(trap) x VF(diode)x tDEADTIME
fPWM
x
Pdiode = 6 x IRMS(FOC) x VF(diode) x tDEADTIME
fPWM
x
PBK = 0.11 x VBK x IBK assuming (ηBK = 90%)
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
• Visit the DRV8316CR EVM Tool Page
• Read the Delay and Dead Times in Integrated MOSFET Drivers application note
• Download the BLDC Integrated MOSFET Thermal Calculator tool
• Calculating Motor Driver Power Dissipation, SLVA504
• PowerPAD™ Thermally Enhanced Package, SLMA002
• PowerPAD™ Made Easy, SLMA004
• Sensored 3-Phase BLDC Motor Control Using MSP430, SLAA503
• Understanding Motor Driver Current Ratings, SLVA505
12.2 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
12.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.5 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most-
current data available for the designated device. This data is subject to change without notice and without
revision of this document. For browser-based versions of this data sheet, see the left-hand navigation pane.
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
DRV8316CRRGFR
DRV8316CTRGFR
ACTIVE
VQFN
VQFN
RGF
40
40
3000 RoHS & Green
3000 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 125
-40 to 125
DRV
8316CR
Samples
Samples
ACTIVE
RGF
NIPDAU
DRV
8316CT
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
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Addendum-Page 2
GENERIC PACKAGE VIEW
RGF 40
5 x 7, 0.5 mm pitch
VQFN - 1 mm max height
PLASTIC QUAD FLAT PACK- NO LEAD
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4225115/A
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PACKAGE OUTLINE
VQFN - 1 mm max height
PLASTIC QUAD FLAT PACK- NO LEAD
A
RGF0040E
5.1
4.9
B
PIN 1 INDEX AREA
7.1
6.9
1 MAX
C
SEATING PLANE
0.08 C
3.8
3.6
3.5
0.05
0.00
(0.1) TYP
20
13
36X 0.5
21
12
SYMM
41
5.8
5.6
5.5
1
32
0.3
40X
PIN 1 ID
(OPTIONAL)
0.2
33
40
SYMM
0.1
C A B
C
0.5
0.3
40X
0.05
4224999/B 06/2021
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for optimal thermal and mechanical performance.
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EXAMPLE BOARD LAYOUT
VQFN - 1 mm max height
RGF0040E
PLASTIC QUAD FLAT PACK- NO LEAD
(4.8)
(3.7)
(3.5)
40
33
40X (0.6)
40X (0.25)
1
32
(Ø0.2) TYP
VIA
SYMM
41
(5.7) (5.5)
(6.8)
(1.35)
(1.25)
21
12
13
20
(R0.05) TYP
36x (0.5)
(0.625)
(0.975)
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 12X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
SOLDER MASK
OPENING
METAL
EXPOSED METAL
SOLDER MASK
OPENING
EXPOSED METAL
METAL UNDER
SOLDER MASK
NON- SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4224999/B 06/2021
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
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EXAMPLE STENCIL DESIGN
VQFN - 1 mm max height
RGF0040E
PLASTIC QUAD FLAT PACK- NO LEAD
(4.8)
(3.5)
36X (0.5)
40
33
40X (0.6)
40X (0.25)
41
1
32
12X
(1.15)
SYMM
(5.5)
(6.8)
(0.675)
(1.35)
12
21
(R0.05) TYP
13
20
(1.25)
12X (1.05)
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD
69% PRINTED COVERAGE BY AREA
SCALE: 12X
4224999/B 06/2021
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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