DS34LV86TMX/NOPB [TI]

3V 增强型 CMOS 四路差动线路接收器 | D | 16 | -40 to 85;
DS34LV86TMX/NOPB
型号: DS34LV86TMX/NOPB
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

3V 增强型 CMOS 四路差动线路接收器 | D | 16 | -40 to 85

光电二极管 接口集成电路
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DS34LV86T  
www.ti.com  
SNLS115D JUNE 2000REVISED APRIL 2013  
DS34LV86T 3V Enhanced CMOS Quad Differential Line Receiver  
Check for Samples: DS34LV86T  
1
FEATURES  
DESCRIPTION  
The DS34LV86T is a high speed quad differential  
CMOS receiver that meets the requirements of both  
TIA/EIA-422-B and ITU-T V.11. The CMOS  
DS34LV86T features typical low static ICC of 9 mA  
which makes it ideal for battery powered and power  
conscious applications. The Tri-State enables, EN,  
allow the device to be disabled when not in use to  
minimize power consumption. The dual enable  
scheme allows for flexibility in turning receivers on  
and off.  
Low Power CMOS Design (30 mW Typical)  
Interoperable With Existing 5V RS-422  
Networks  
Industrial Temperature Range  
Meets TIA/EIA-422-B (RS-422) and ITU-T V.11  
Recommendation  
3.3V Operation  
±7V Common Mode Range @ VID = 3V  
±10V Common Mode Range @ VID = 0.2V  
Receiver OPEN Input Failsafe Feature  
Ensured AC Parameter:  
The receiver output (RO) is ensured to be High when  
the inputs are left open. The receiver can detect  
signals as low as ±200 mV over the common mode  
range of ±10V. The receiver outputs (RO) are  
compatible with TTL and LVCMOS levels.  
Maximum Receiver Skew: 4 ns  
Transition Time: 10 ns  
Pin Compatible With DS34C86T  
32 MHz Toggle Frequency  
>6.5k ESD Tolerance (HBM)  
Available in SOIC Packaging  
Connection Diagram  
Figure 1. SOIC (Top View)  
See Package Number D  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2000–2013, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
DS34LV86T  
SNLS115D JUNE 2000REVISED APRIL 2013  
www.ti.com  
TRUTH TABLE(1)  
Enable  
EN  
Inputs  
RI+–RI  
Output  
RO  
L
X
Z
H
L
H
H
H
V
ID +0.2V  
ID ≤ −0.2V  
Open†  
V
H
(1) L = Logic Low  
H = Logic High  
X = Irrelevant  
Z = Tri-State  
† = Open, Not Terminated  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ABSOLUTE MAXIMUM RATINGS(1)(2)  
Supply Voltage (VCC  
)
+7V  
+7V  
Enable Input Voltage (EN)  
Receiver Input Voltage  
(VID: RI+, RI)  
(VCM: RI+, RI)  
±14V  
Receiver Input Voltage  
±14V  
Receiver Output Voltage (RO)  
Receiver Output Current (RO)  
0.5V to VCC + 0.5V  
±25 mA  
Maximum Package Power Dissipation @ +25°C D Package  
Derate D Package  
1190 mW  
9.8 mW/°C above +25°C  
-65°C to +150°C  
+260°C  
Storage Temperature Range  
Lead Temperature Range  
Soldering (4 Seconds)  
ESD Ratings (HBM, 1.5k, 100 pF)  
Receiver Inputs and Enables  
Other Pins  
6.5 kV  
2 kV  
(1) Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that  
the devices should be operated at these limits. The table of Electrical Characteristics specifies conditions of device operation.  
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and  
specifications.  
RECOMMENDED OPERATING CONDITIONS  
Min  
3.0  
Typ  
3.3  
Max  
3.6  
Units  
V
Supply Voltage (VCC  
)
Operating Free Air  
Temperature (TA)  
40  
+25  
+85  
°C  
2
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Copyright © 2000–2013, Texas Instruments Incorporated  
Product Folder Links: DS34LV86T  
DS34LV86T  
www.ti.com  
SNLS115D JUNE 2000REVISED APRIL 2013  
ELECTRICAL CHARACTERISTICS(1)(2)  
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified.  
Symbol  
VTH  
Parameter  
Conditions  
Pin  
Min  
Typ  
Max  
Units  
Differential Input Threshold  
VOUT = VOH or VOL  
RI+,  
200  
±17.5  
+200  
mV  
7V < VCM < +7V  
RI−  
VHY  
VIH  
VIL  
Hysteresis  
VCM = 1.5V  
35  
mV  
V
Minimum High Level Input Voltage  
Minimum Low Level Input Voltage  
Input Resistance  
2.0  
5.0  
EN  
0.8  
1.8  
V
RIN  
VIN = 7V, +7V  
(Other Input = GND)  
8.5  
kΩ  
IIN  
Input Current  
(Other Input = 0V,  
Power On or VCC = 0V)  
VIN = +10V  
VIN = +3V  
0
0
1.1  
mA  
mA  
mA  
mA  
mA  
μA  
V
RI+,  
RI−  
0.27  
VIN = 0.5V  
VIN = 3V  
0.02  
0.43  
1.26  
0
0
VIN = 10V  
VIN = 0V to VCC  
2.2  
IEN  
EN  
RO  
VCC  
±1  
VOH  
High Level Output Voltage  
High Level Output Voltage  
Low Level Output Voltage  
IOH = 6 mA, VID = +1V  
IOH = 6 mA, VID = OPEN  
2.4  
3
VOH  
IOH = 100 μA, VID = +1V  
IOH = 100 μA, VID = OPEN  
V
CC 0.1  
V
VOL  
IOZ  
IOL = +6 mA, VID = 1V  
0.13  
0.5  
V
Output Tri-State  
Leakage  
Current  
VIN = VCC or GND  
EN = VIL  
±50  
μA  
ISC  
ICC  
Output Short Circuit Current  
VO = 0V, VID |200 mV|  
10  
35  
70  
mA  
mA  
See(3)  
Power Supply Current  
No Load, All RI+, RI= Open,  
9
15  
EN = VCC or GND  
(1) Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground  
except VID  
.
(2) All typicals are given for: VCC = +3.3V, TA = +25°C.  
(3) Short one output at a time to ground. Do not exceed package power dissipation ratings.  
Copyright © 2000–2013, Texas Instruments Incorporated  
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3
Product Folder Links: DS34LV86T  
DS34LV86T  
SNLS115D JUNE 2000REVISED APRIL 2013  
www.ti.com  
SWITCHING CHARACTERISTICS(1)(2)(3)  
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified.  
Symbol  
tPHL  
tPLH  
tr  
Parameter  
Propagation Delay High to Low  
Propagation DeIay Low to High  
Rise Time (20% to 80%)  
Fall Time (80% to 20%)  
Disable Time  
Conditions  
Min  
6
Typ  
17.5  
17.8  
4.1  
Max  
35  
35  
10  
10  
40  
40  
40  
40  
4
Units  
ns  
CL = 15 pF  
See (Figure 2 and  
Figure 3 )  
6
ns  
ns  
tf  
3.3  
ns  
tPHZ  
tPLZ  
tPZH  
tPZL  
tSK1  
tSK2  
tSK3  
fMAX  
CL = 50 pF  
See (Figure 4 and  
Figure 5)  
ns  
Disable Time  
ns  
Enable Time  
ns  
Enable Time  
ns  
Skew, |tPHL tPLH| See(4)  
Skew, Pin to Pin See(5)  
Skew, Part to Part See(6)  
CL = 15 pF  
CL = 15 pF  
0.3  
0.6  
7
ns  
4
ns  
17  
ns  
Maximum Operating Frequency  
See(7)  
32  
MHz  
(1) All typicals are given for: VCC = +3.3V, TA = +25°C.  
(2) Generator waveform for all tests unless otherwise specified: f = 1 MHz, Duty Cycle = 50%, ZO = 50Ω, tr 10 ns, tf 10 ns.  
(3) CL includes probe and jig capacitance.  
(4) tSK1 is the |tPHL tPLH| of a channel.  
(5) tSK2 is the maximum skew between any two channels within a device, on either edge.  
(6) tSK3 is the difference in propagation delay times between any channels of any devices. This specification (maximum limit) applies to  
devices within VCC ±0.1V of one another,and a Delta TA = ±5°C (between devices) within the operating temperature range. This  
parameter is specified by design and characterization.  
(7) All channels switching, output duty cycle criteria is 40%/60% measured at 50% Input = 1V to 2V, 50% Duty Cycle, tr/tf 5 ns. This  
parameter is ensured by design and characterization.  
PARAMETER MEASUREMENT INFORMATION  
Generator waveform for all tests unless otherwise specified: f = 1 MHz, Duty Cycle = 50%, ZO = 50Ω, tr 10 ns, tf ≤  
10 ns.  
CL includes probe and jig capacitance.  
Figure 2. Receiver Propagation Delay and Transition Time Test Circuit  
4
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Product Folder Links: DS34LV86T  
 
DS34LV86T  
www.ti.com  
SNLS115D JUNE 2000REVISED APRIL 2013  
PARAMETER MEASUREMENT INFORMATION (continued)  
Generator waveform for all tests unless otherwise specified: f = 1 MHz, Duty Cycle = 50%, ZO = 50Ω, tr 10 ns, tf ≤  
10 ns.  
CL includes probe and jig capacitance.  
Figure 3. Receiver Propagation Delay and Transition Time Waveform  
Figure 4. Receiver Tri-State Test Circuit  
Generator waveform for all tests unless otherwise specified: f = 1 MHz, Duty Cycle = 50%, ZO = 50Ω, tr 10 ns, tf ≤  
10 ns.  
CL includes probe and jig capacitance.  
Figure 5. Receiver Tri-State Output Enable and Disable Waveforms  
Copyright © 2000–2013, Texas Instruments Incorporated  
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5
Product Folder Links: DS34LV86T  
DS34LV86T  
SNLS115D JUNE 2000REVISED APRIL 2013  
www.ti.com  
TYPICAL APPLICATION INFORMATION  
General application guidelines and hints for differential drivers receivers may be found in the following application  
notes:  
AN-214 (SNLA137), AN-457 (SNLA148), AN-805 (SNOA233), AN-847 (SNLA031), AN-903 (SNLA034), AN-912  
(SNLA036), AN-916 (SNLA219)  
Power Decoupling Recommendations: Bypass caps must be used on power pins. High frequency ceramic  
(surface mount is recommended) 0.1 μF in paraIIel with 0.01 μF at the power supply pin. A 10 μF or greater solid  
tantalum or electrolytic should be connected at the power entry point on the printed circuit board.  
RT is optional although highly recommended to reduce reflection  
Figure 6. Typical Receiver Connections  
Figure 7. Typical Receiver Output Waveforms  
6
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Copyright © 2000–2013, Texas Instruments Incorporated  
Product Folder Links: DS34LV86T  
DS34LV86T  
www.ti.com  
SNLS115D JUNE 2000REVISED APRIL 2013  
Figure 8. Typical Receiver Input Circuit  
Figure 9. Typical ICC vs Frequency  
Figure 10. IIN vs VIN (Power On, Power Off)  
Copyright © 2000–2013, Texas Instruments Incorporated  
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7
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DS34LV86T  
SNLS115D JUNE 2000REVISED APRIL 2013  
www.ti.com  
Figure 11. IOL vs VOL  
Figure 12. IOH vs VOH  
8
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Product Folder Links: DS34LV86T  
 
DS34LV86T  
www.ti.com  
SNLS115D JUNE 2000REVISED APRIL 2013  
REVISION HISTORY  
Changes from Revision C (April 2013) to Revision D  
Page  
Changed layout of National Data Sheet to TI format ............................................................................................................ 8  
Copyright © 2000–2013, Texas Instruments Incorporated  
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9
Product Folder Links: DS34LV86T  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
DS34LV86TM/NOPB  
DS34LV86TMX/NOPB  
ACTIVE  
SOIC  
SOIC  
D
D
16  
16  
48  
RoHS & Green  
SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 85  
-40 to 85  
DS34LV86  
TM  
ACTIVE  
2500 RoHS & Green  
SN  
DS34LV86  
TM  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
5-Jan-2022  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
DS34LV86TMX/NOPB  
SOIC  
D
16  
2500  
330.0  
16.4  
6.5  
10.3  
2.3  
8.0  
16.0  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
5-Jan-2022  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SOIC 16  
SPQ  
Length (mm) Width (mm) Height (mm)  
367.0 367.0 35.0  
DS34LV86TMX/NOPB  
D
2500  
Pack Materials-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
5-Jan-2022  
TUBE  
*All dimensions are nominal  
Device  
Package Name Package Type  
SOIC  
Pins  
SPQ  
L (mm)  
W (mm)  
T (µm)  
B (mm)  
DS34LV86TM/NOPB  
D
16  
48  
495  
8
4064  
3.05  
Pack Materials-Page 3  
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