DS90C031QML-SP [TI]

LVDS 四路 CMOS 差动线路驱动器;
DS90C031QML-SP
型号: DS90C031QML-SP
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

LVDS 四路 CMOS 差动线路驱动器

驱动 线路驱动器或接收器 驱动程序和接口
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DS90C031QML  
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SNLS202B MARCH 2006REVISED MARCH 2013  
DS90C031QML LVDS Quad CMOS Differential Line Driver  
Check for Samples: DS90C031QML  
1
FEATURES  
DESCRIPTION  
The DS90C031 is a quad CMOS differential line  
driver designed for applications requiring ultra low  
power dissipation and high data rates.  
2
Radiation guaranteed 100 krad(Si)  
High impedance LVDS outputs with power-off  
±350 mV differential signaling  
Low power dissipation  
The DS90C031 accepts TTL/CMOS input levels and  
translates them to low voltage (350 mV) differential  
output signals. In addition the driver supports a TRI-  
STATE function that may be used to disable the  
output stage, thus dropping the device to a low idle  
power state of 11 mW typical.  
Low differential skew  
Low propagation delay  
Pin compatible with DS26C31  
Compatible with IEEE 1596.3 SCI LVDS  
standard  
In addition, the DS90C031 provides power-off high  
impedance LVDS outputs. This feature assures  
minimal loading effect on the LVDS bus lines when  
VCC is not present. The DS90C031 and companion  
line receiver (DS90C032) provide a new alternative to  
high power psuedo-ECL devices for high speed point-  
to-point interface applications.  
Compatible with proposed TIA LVDS standard  
Fail safe logic for floating inputs  
Connection Diagram  
Figure 1. Dual-In-Line  
See Package Number NAD0016A & NAC0016A  
Figure 2. LCCC Package  
See Pacakage Number NAJ0020A  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2006–2013, Texas Instruments Incorporated  
DS90C031QML  
SNLS202B MARCH 2006REVISED MARCH 2013  
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Functional Block Diagram  
Truth Table  
Enables  
Input  
Outputs  
EN  
EN*  
DI  
X
L
DO+  
Z
DO  
Z
L
H
L
H
All other combinations of  
ENABLE inputs  
H
H
L
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Absolute Maximum Ratings(1)  
Supply Voltage (VCC  
)
0.3V to +6V  
0.3V to (VCC + 0.3V)  
0.3V to (VCC + 0.3V)  
0.3V to + 5.8V  
Input Voltage (DI)  
Enable Input Voltage (EN, EN*)  
Output Voltage (DO+, DO−  
)
Storage Temperature Range  
65°C TA +150°C  
+260°C  
Lead Temperature Range, Soldering (4 seconds)  
(2)  
Maximum Package Power Dissipation at +25°C  
20 Pin LCCC Package  
16 Pin CLGA (NAD)  
16 Pin CLGA (NAC)  
Thermal Resistance  
θJA  
1900 mW  
1450 mW  
1450 mW  
20 Pin LCCC Package  
16 Pin CLGA (NAD)  
16 Pin CLGA (NAC)  
θJC  
78°C/W  
145°C/W  
145°C/W  
20 Pin LCCC Package  
16 Pin CLGA (NAD)  
16 Pin CLGA (NAC)  
18°C/W  
14°C/W  
14°C/W  
3.5KV  
(3)  
ESD Rating  
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for  
which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see  
the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics  
may degrade when the device is not operated under the listed test conditions.  
(2) Derate LCCC at 12.8mW/°C above +25°C. Derate CLGA at 6.9mW/°C above +25°C.  
(3) Human body model, 1.5 kΩ in series with 100 pF.  
Recommended Operating Conditions  
Min  
+4.5  
55  
Typ  
+5.0  
+25  
Max  
+5.5  
+125  
Unit  
V
Supply Voltage (VCC  
)
Operating Free Air Temperature (TA)  
°C  
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Quality Conformance Inspection  
Table 1. Mil-Std-883, Method 5005 - Group A  
Subgroup  
Description  
Static tests at  
Temp (°C)  
+25  
1
2
Static tests at  
+125  
-55  
3
Static tests at  
4
Dynamic tests at  
Dynamic tests at  
Dynamic tests at  
Functional tests at  
Functional tests at  
Functional tests at  
Switching tests at  
Switching tests at  
Switching tests at  
Settling time at  
Settling time at  
Settling time at  
+25  
5
+125  
-55  
6
7
+25  
8A  
8B  
9
+125  
-55  
+25  
10  
11  
12  
13  
14  
+125  
-55  
+25  
+125  
-55  
(1)  
DC Parameters  
Sub-  
groups  
Symbol  
Parameter  
Conditions  
Notes  
Min Max  
Units  
VOD1  
Differential Ouput Voltage  
RL = 100Ω  
250  
450  
35  
mV  
mV  
1, 2, 3  
1, 2, 3  
DVOD1  
Change in Magnitude of Vod1 for RL = 100Ω  
complementary output States  
VOS  
Offset Voltage  
RL = 100Ω  
RL = 100Ω  
1.12 1.37  
V
1, 2, 3  
1, 2, 3  
5
5
DVOS  
Change in Magnitude of Vos for  
Complementary Output States  
25  
mV  
VOH  
VOL  
VIH  
VIL  
II  
Output Voltage High  
Output Voltage Low  
Input Voltage High  
Input Voltage Low  
Input Current  
RL = 100Ω  
RL = 100Ω  
1.6  
V
V
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
0.9  
2.0  
(2)  
(2)  
VCC  
0.8  
V
Gnd  
V
VI = VCC, Gnd, 2.5, or 0.4V  
ICl = -18mA  
±10  
-1.5  
-5.0  
±10  
µA  
V
VCl  
IOS  
IOff  
Input Clamp Voltage  
Output Short Circuit Current  
Power-off Leakage  
VO = 0V  
mA  
µA  
VO = 0V or 2.4V,  
VCC-= 0V or Open  
IOZ  
Output TRI-STATE Current  
EN = 0.8V and EN* = 2.0V  
VO = 0V or VCC  
±10  
µA  
1, 2, 3  
ICC  
Drivers Enabled Supply Current  
Drivers Disabled Supply Current  
DI = Hi or Low  
25  
10  
mA  
mA  
1, 2, 3  
1, 2, 3  
ICCZ  
DI = Hi or Low, En = Gnd,  
En* = VCC  
(1) Pre and Post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the “Post  
Radiation Limits” table. Radiation end point limits for the noted parameters are guaranteed only for the conditions, as specified.  
(2) Tested during VOH / VOL tests.  
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AC Parameters  
The following conditions apply, unless otherwise specified.  
AC:  
VCC = 4.5V / 5.0V / 5.5V, RL = 100(between outputs), CL = 20pF (each output to Gnd)  
Sub-  
groups  
Symbol  
tPHLD  
tPLHD  
Parameter  
Conditions  
Notes  
Min Max  
Units  
Differential Propagation Delay  
High to Low  
0.5  
0.5  
5.0  
5.0  
ns  
9, 10, 11  
Differential Propagation Delay  
Low to High  
ns  
9, 10, 11  
tSkD  
tSk1  
tSk2  
tPHZ  
tPLZ  
tPZH  
tPZL  
Differential Skew |tPHLD-tPLHD|  
Channel to Channel Skew  
Chip to Chip Skew  
3.0  
3.0  
4.5  
20  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
9, 10, 11  
(1)  
(2)  
(3)  
(3)  
(3)  
(3)  
Disable Time High to Z  
Disable Time Low To Z  
Enable Time Z to High  
Enable Time Z to Low  
20  
20  
20  
(1) Channel-to-Channel Skew is defined as the difference between the propagation delay of the channel and the other channels in the  
same chip with an event on the inputs.  
(2) Chip to Chip Skew is defined as the difference between the minimum and maximum specified differential propagation delays.  
(3) Parameter guaranteed, not tested 100%  
(1)  
AC/DC Parameters - Post Radiation Limits  
Sub-  
groups  
Symbol  
ICC  
ICCZ  
Parameter  
Conditions  
Notes  
Min Max  
Units  
Drivers Enabled Supply Current  
DI - Hi or Low, En = Gnd,  
En* = VCC  
30  
mA  
1
Drivers Disabled Supply Current  
DI - Hi or Low, En = Gnd,  
En* = VCC  
30  
mA  
1
(1) Pre and Post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the “Post  
Radiation Limits” table. Radiation end point limits for the noted parameters are guaranteed only for the conditions, as specified.  
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Parameter Measurement Information  
Figure 3. Driver VOD and VOS Test Circuit  
Figure 4. Driver Propagation Delay and Transition Time Test Circuit  
Figure 5. Driver Propagation Delay and Transition Time Waveforms  
Figure 6. Driver TRI-STATE Delay Test Circuit  
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Parameter Measurement Information (continued)  
Figure 7. Driver TRI-STATE Delay Waveform  
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Typical Performance Characteristics  
Power Supply Current vs Power Supply Voltage  
Power Supply Current vs Temperature  
Figure 8.  
Figure 9.  
Power Supply Current vs Power Supply Voltage  
Power Supply Current vs Temperature  
Figure 10.  
Figure 11.  
Output TRI-STATE Current vs Power Supply Voltage  
Output Short Circuit Current vs Power Supply Voltage  
Figure 12.  
Figure 13.  
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Typical Performance Characteristics (continued)  
Differential Output Voltage vs Power Supply Voltage  
Differential Output Voltage vs Ambient Temperature  
Figure 14.  
Figure 15.  
Output Voltage High vs Power Supply Voltage  
Output Voltage High vs Ambient Temperature  
Figure 16.  
Figure 17.  
Output Voltage Low vs Power Supply Voltage  
Output Voltage Low vs Ambient Temperature  
Figure 18.  
Figure 19.  
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Typical Performance Characteristics (continued)  
Offset Voltage vs Power Supply Voltage  
Offset Voltage vs Ambient Temperature  
Figure 20.  
Figure 21.  
Power Supply Current vs Frequency  
Power Supply Current vs Frequency  
Figure 22.  
Figure 23.  
Differential Output Voltage vs Load Resistor  
Differential Propagation Delay vs Power Supply Voltage  
Figure 24.  
Figure 25.  
10  
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Typical Performance Characteristics (continued)  
Differential Propagation Delay vs Ambient Temperature  
Differential Skew vs Power Supply Voltage  
Figure 26.  
Figure 27.  
Differential Skew vs Ambient Temperature  
Differential Transition Time vs Power Supply Voltage  
Figure 28.  
Figure 29.  
Differential Transition Time vs Ambient Temperature  
Figure 30.  
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TYPICAL APPLICATION  
Figure 31. Point-to-Point Application  
APPLICATIONS INFORMATION  
LVDS drivers and receivers are intended to be primarily used in an uncomplicated point-to-point configuration as  
is shown in Figure 31. This configuration provides a clean signaling environment for the quick edge rates of the  
drivers. The receiver is connected to the driver through a balanced media which may be a standard twisted pair  
cable, a parallel pair cable, or simply PCB traces. Typically, the characteristic impedance of the media is in the  
range of 100Ω. A termination resistor of 100Ω should be selected to match the media, and is located as close to  
the receiver input pins as possible. The termination resistor converts the current sourced by the driver into a  
voltage that is detected by the receiver. Other configurations are possible such as a multi-receiver configuration,  
but the effects of a mid-stream connector(s), cable stub(s), and other impedance discontinuities as well as  
ground shifting, noise margin limits, and total termination loading must be taken into account.  
The DS90C031differential line driver is a balanced current source design. A current mode driver, generally  
speaking has a high output impedance and supplies a constant current for a range of loads (a voltage mode  
driver on the other hand supplies a constant voltage for a range of loads). Current is switched through the load in  
one direction to produce a logic state and in the other direction to produce the other logic state. The typical  
output current is mere 3.4 mA, a minimum of 2.5 mA, and a maximum of 4.5 mA. The current mode requires (as  
discussed above) that a resistive termination be employed to terminate the signal and to complete the loop as  
shown in Figure 31. AC or unterminated configurations are not allowed. The 3.4 mA loop current will develop a  
differential voltage of 340 mV across the 100Ω termination resistor which the receiver detects with a 240 mV  
minimum differential noise margin neglecting resistive line losses (driven signal minus receiver threshold (340  
mV – 100 mV = 240 mV)). The signal is centered around +1.2V (Driver Offset, VOS) with respect to ground as  
shown in Figure 32. Note that the steady-state voltage (VSS) peak-to-peak swing is twice the differential voltage  
(VOD) and is typically 680 mV.  
The current mode driver provides substantial benefits over voltage mode drivers, such as an RS-422 driver. Its  
quiescent current remains relatively flat versus switching frequency. Whereas the RS-422 voltage mode driver  
increases exponentially in most case between 20 MHz–50 MHz. This is due to the overlap current that flows  
between the rails of the device when the internal gates switch. Whereas the current mode driver switches a fixed  
current between its output without any substantial overlap current. This is similar to some ECL and PECL  
devices, but without the heavy static ICC requirements of the ECL/PECL designs. LVDS requires > 80% less  
current than similar PECL devices. AC specifications for the driver are a tenfold improvement over other existing  
RS-422 drivers.  
The TRI-STATE function allows the driver outputs to be disabled, thus obtaining an even lower power state when  
the transmission of data is not required. The LVDS outputs are high impedance under power-off condition. This  
allows for multiple or redundant drivers to be used in certain applications.  
The footprint of the DS90C031 is the same as the industry standard 26LS31 Quad Differential (RS-422) Driver.  
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Figure 32. Driver Output Levels  
Pin Descriptions  
Pin No. (SOIC)  
Name  
DI  
Description  
1, 7, 9, 15  
Driver input pin, TTL/CMOS compatible  
Non-inverting driver output pin, LVDS levels  
Inverting driver output pin, LVDS levels  
Active high enable pin, OR-ed with EN*  
Active low enable pin, OR-ed with EN  
Power supply pin, +5V ± 10%  
2, 6, 10, 14  
DO+  
DO−  
EN  
3, 5, 11, 13  
4
12  
16  
8
EN*  
VCC  
Gnd  
Ground pin  
Radiation Environments  
Careful consideration should be given to environmental conditions when using a product in a radiation  
environment.  
Total Ionizing Dose  
Radiation hardness assured (RHA) products are those part numbers with a total ionizing dose (TID) level  
specified in the Ordering Information table on the front page. Testing and qualification of these products is done  
on a wafer level according to MIL-STD-883G, Test Method 1019.7, Condition A and the “Extended room  
temperature anneal test” described in section 3.11 for application environment dose rates less than 0.16  
rad(Si)/s. Wafer level TID data is available with lot shipments.  
Single Event Latch-Up  
One time single event latch-up (SEL) testing was preformed showing SEL immunity to 103 MeV-cm2/mg. A test  
report is available upon request.  
Single Event Upset  
Single event upset (SEU) data are available upon request.  
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REVISION HISTORY  
Released  
Revision  
Section  
Changes  
03/01/06  
New  
New Release, Corporate format  
1 MDS data sheet converted into Corp. data sheet  
format. MNDS90C031-X-RH Rev 2A1 will be  
archived.  
10/12/2010  
03/04/2013  
A
B
Features, Ordering Table, Absolute Maximum Added reference to Radiation and Fail safe. Removed  
Ratings, Applications Information  
reference to EOL NSID, Output Voltage changed limit  
from 0.3V to (VCC + 0.3V) to 0.3V to +5.8V, Added  
paragraph to Applications Information section and  
New Radiation Environment section. Revision A will  
be Archived.  
All  
Changed layout of National Data Sheet to TI format.  
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PACKAGE OPTION ADDENDUM  
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PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
Top-Side Markings  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4)  
5962-9583301Q2A  
ACTIVE  
LCCC  
CFP  
CFP  
CFP  
LCCC  
CFP  
CFP  
CFP  
NAJ  
20  
16  
16  
16  
20  
16  
16  
16  
50  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
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Call TI  
-55 to 125  
DS90C031E  
-QML Q  
5962-95833  
01Q2A ACO  
01Q2A >T  
5962-9583301VFA  
5962R9583301VFA  
5962R9583301VZA  
DS90C031E-QML  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
NAD  
NAD  
NAC  
NAJ  
19  
19  
42  
50  
19  
42  
19  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
DS90C031W-  
QMLV Q  
5962-95833  
01VFA ACO  
01VFA >T  
DS90C031WR  
QMLV Q  
5962R95833  
01VFA ACO  
01VFA >T  
DS90C031WGR  
QMLV Q  
5962R95833  
01VZA ACO  
01VZA >T  
DS90C031E  
-QML Q  
5962-95833  
01Q2A ACO  
01Q2A >T  
DS90C031W-QMLV  
DS90C031WGRQMLV  
DS90C031WRQMLV  
NAD  
NAC  
NAD  
DS90C031W-  
QMLV Q  
5962-95833  
01VFA ACO  
01VFA >T  
DS90C031WGR  
QMLV Q  
5962R95833  
01VZA ACO  
01VZA >T  
DS90C031WR  
QMLV Q  
5962R95833  
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PACKAGE OPTION ADDENDUM  
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Orderable Device  
Status Package Type Package Pins Package  
Drawing Qty  
Eco Plan Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
Top-Side Markings  
Samples  
(1)  
(2)  
(3)  
(4)  
01VFA ACO  
01VFA >T  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4)  
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a  
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF DS90C031QML, DS90C031QML-SP :  
Military: DS90C031QML  
Space: DS90C031QML-SP  
Addendum-Page 2  
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11-Apr-2013  
NOTE: Qualified Version Definitions:  
Military - QML certified for Military and Defense Applications  
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