INA117BM-3 [TI]

High Common-Mode Voltage DIFFERENCE AMPLIFIER; 高共模电压差动放大器


型号：	INA117BM-3
厂家：	TEXAS INSTRUMENTS
描述：	High Common-Mode Voltage DIFFERENCE AMPLIFIER 高共模电压差动放大器放大器
文件：	总17页 (文件大小：312K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

INA117

www.ti.com

High Common-Mode Voltage

DIFFERENCE AMPLIFIER

FEATURES

APPLICATIONS

ꢀ COMMON-MODE INPUT RANGE:

ꢀ CURRENT MONITOR

±200V (V_S= ±15V)

ꢀ BATTERY CELL-VOLTAGE MONITOR

ꢀ GROUND BREAKER

ꢀ PROTECTED INPUTS:

±500V Common-Mode

±500V Differential

ꢀ INPUT PROTECTION

ꢀ SIGNAL ACQUISITION IN NOISY

ꢀ UNITY GAIN: 0.02% Gain Error max

ꢀ NONLINEARITY: 0.001% max

ꢀ CMRR: 86dB min

ENVIRONMENTS

ꢀ FACTORY AUTOMATION

DESCRIPTION

The INA117 is a precision unity-gain difference

amplifier with very high common-mode input voltage

range. It is a single monolithic IC consisting of a

precision op amp and integrated thin-film resistor

network. It can accurately measure small differential

voltages in the presence of common-mode signals up

to ±200V. The INA117 inputs are protected from

momentary common-mode or differential overloads

up to ±500V.

21.11kΩ

Ref_B

–In

+In

V–

Comp

V+

380kΩ

20kΩ

In many applications, where galvanic isolation is not

essential, the INA117 can replace isolation amplifiers.

This can eliminate costly isolated input-side power

supplies and their associated ripple, noise and quies-

cent current. The INA117’s 0.001% nonlinearity and

200kHz bandwidth are superior to those of conven-

tional isolation amplifiers.

V_O

Ref_A

The INA117 is available in 8-pin plastic mini-DIP and

SO-8 surface-mount packages, specified for the –40°C

to +85°C temperature range. The metal TO-99 models

are available specified for the –40°C to +85°C and

–55°C to +125°C temperature range.

SBOS154A

Printed in U.S.A. December, 2000

SPECIFICATIONS

At T_A= +25°C, V_S= ±15V, unless otherwise noted.

INA117AM, SM

INA117BM

TYP

INA117P, KU

TYP

PARAMETER

GAIN

Initial

Error

CONDITIONS

MIN

TYP

MAX

MIN

MAX

MIN

MAX

UNITS

(1)

0.01

ꢀ

V/V

ppm/°C

0.05

0.02

ꢀ

vs Temperature

(2)

Nonlinearity

0.0002 0.001

ꢀ

OUTPUT

Rated Voltage

Rated Current

Impedance

Current Limit

Capacitive Load

I_O= +20mA, –5mA

+20, –5

ꢀ

Ω

V_O= 10V

0.01

+49, –13

1000

ꢀ

To Common

Stable Operation

INPUT

Impedance

Differential

Common-Mode

Differential

800

400

ꢀ

kΩ

Voltage Range

±10

Common-Mode, Continuous

±200

ꢀ

(3)

Common-Mode Rejection

ꢀ

AC, 60Hz

V_CM= 400Vp-p

vs Temperature, DC

AM, BM, P, KU

T_A= T_MINto T_MAX

ꢀ

(4)

OFFSET VOLTAGE

RTO

Initial

120

1000

ꢀ

1000

ꢀ

600

ꢀ

2000

µV

µV/°C

KU Grade (SO-8 Package)

vs Temperature

vs Supply

T_A= T_MINto T_MAX

V_S= ±5V to ±18V

8.5

200

ꢀ

vs Time

µV/mo

(5)

OUTPUT NOISE VOLTAGE

f_B= 0.01Hz to 10Hz

f_B= 10kHz

RTO

550

ꢀ

µVp-p

nV/√Hz

DYNAMIC RESPONSE

Gain Bandwidth, –3dB

Full Power Bandwidth

Slew Rate

Settling Time: 0.1%

0.01%

200

ꢀ

kHz

V/µs

µs

V_O= 20Vp-p

ꢀ

2.6

6.5

ꢀ

V_O= 10V Step

V_CM= 10V Step, V_DIFF= 0V

0.01%

4.5

POWER SUPPLY

Rated

Voltage Range

Quiescent Current

±15

ꢀ

Derated Performance

V_O= 0V

±5

±18

ꢀ

1.5

TEMPERATURE RANGE

Specification: AM, BM, P, KU

Operation

Storage

–25

–55

–65

+85

ꢀ

–40

+85

°C

+125

+150

ꢀ

–40

–55

+85

+125

ꢀSpecification same as for INA117AM.

NOTES: (1) Connected as difference amplifier (see Figure 1). (2) Nonlinearity is the maximum peak deviation from the best-fit straight line as a percent of full-scale

peak-to-peak output. (3) With zero source impedance (see discussion of common-mode rejection in Application Information section). (4) Includes effects of amplifier’s

input bias and offset currents. (5) Includes effects of amplifier’s input current noise and thermal noise contribution of resistor network.

INA117

SBOS154A

PIN CONFIGURATION

Top View

TO-99

Top View

DIP/SO

INA117AM, BM, SM

INA117P, KU

Tab

Comp

Ref B

V+

Comp

Ref_B

V+

–In

+In

V–

–In

Output

Ref_A

Ref A

+In

V–

Case internally connected to V–. Make no connection.

ABSOLUTE MAXIMUM RATINGS

ELECTROSTATIC

DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Texas Instru-

ments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling

and installation procedures can cause damage.

Supply Voltage .................................................................................. ±22V

Input Voltage Range, Continuous ................................................... ±200V

Common-Mode and Differential, 10s ........................................... ±500V

Operating Temperature

M Metal TO-99 ................................................................–55 to +125°C

P Plastic DIP and U SO-8 ................................................–40 to +85°C

Storage Temperature

M Package.......................................................................–65 to +150°C

P Plastic DIP and U SO-8 .............................................. –55 to +125°C

Lead Temperature (soldering, 10s)............................................... +300°C

Output Short Circuit to Common............................................. Continuous

ESD damage can range from subtle performance degrada-

tion to complete device failure. Precision integrated circuits

may be more susceptible to damage because very small

parametric changes could cause the device not to meet its

published specifications.

PACKAGE/ORDERING INFORMATION

PACKAGE

DRAWING

NUMBER

SPECIFIED

TEMPERATURE

RANGE

PACKAGE

MARKING

ORDERING

NUMBER⁽¹⁾

TRANSPORT

MEDIA

PRODUCT

PACKAGE

INA117P

INA117KU

DIP-8

006

182

–40°C to +85°C

INA117P

INA117KU

INA117P

INA117KU

Rails

SO-8 Surface-Mount

INA117KU/2K5

INA117AM

INA117BM

INA117SM

Tape and Reel

Rails

INA117AM

INA117BM

INA117SM

TO-99 Metal

001

–25°C to +85°C

INA117AM

INA117BM

INA117SM

Rails

–55°C to +125°C

Rails

NOTE: (1) Models with a slash (/) are available only in Tape and Reel in the quantities indicated (e.g., /2K5 indicates 2500 devices per reel). Ordering 2500

pieces of “INA117KU/2K5” will get a single 2500-piece Tape and Reel.

INA117

SBOS154A

TYPICAL PERFORMANCE CURVES

At T_A= +25°C, V_S= ±15V, unless otherwise noted.

COMMON-MODE REJECTION vs FREQUENCY

POWER-SUPPLY REJECTION vs FREQUENCY

100

INA117BM

V–

V+

INA117AM, SM, P, KU

100

10k

100k

100

10k

Frequency (Hz)

POSITIVE COMMON-MODE VOLTAGE RANGE

vs POSITIVE POWER-SUPPLY VOLTAGE

NEGATIVE COMMON-MODE VOLTAGE RANGE

vs NEGATIVE POWER-SUPPLY VOLTAGE

400

350

300

250

200

150

100

–400

–350

–300

–250

–200

–150

–100

–50

T_A= –55°C

T_A= +25°C

Max Rating = 200V

Max Rating = –200V

T_A= +125°C

T_A= –55°C to +125°C

–V_S= –5V to –20V

+V_S= +5V to +20V

–5

–10

–15

–20

Positive Power-Supply Voltage (V)

Negative Power-Supply Voltage (V)

INA117

SBOS154A

TYPICAL PERFORMANCE CURVES (Cont.)

At T_A= +25°C, V_S= ±15V, unless otherwise noted.

SMALL SIGNAL STEP RESPONSE

C_L= 0

SMALL SIGNAL STEP RESPONSE

C_L= 1000pF

LARGE SIGNAL STEP RESPONSE

INA117

SBOS154A

APPLICATION INFORMATION

Figure 1 shows the basic connections required for operation.

V–

V+

Applications with noisy or high-impedance power-supply lines

may require decoupling capacitors close to the device pins.

380kΩ

The output voltage is equal to the differential input volt-

age between pins 2 and 3. The common mode input

voltage is rejected.

V₂

Internal circuitry connected to the compensation pin 8 can-

cels the parasitic distributed capacitance between the feed-

back resistor, R₂, and the IC substrate. For specified dy-

namic performance, pin 8 should be grounded or connected

through a 0.1µF capacitor to an AC ground such as V+.

V_O= V₃– V₂

V₃

21.1kΩ

20kΩ

+15V

100kΩ

–15V

+15V

50kΩ

±1.5mV

Range

–15V

(a)

10Ω

1µF

Tantalum

1µF

Tantalum

R₁

R₂

380kΩ

V–

V+

380kΩ

–In = V₂

380kΩ

R₃

380kΩ

V₂

V_O= V₃– V₂

+In = V₃

380kΩ

R₅

R₄

20kΩ

= V – V

21.1kΩ

V₃

V+

21.1kΩ

20kΩ

100µA

1/2 REF200

FIGURE 1. Basic Power and Signal Connections.

100Ω

COMMON-MODE REJECTION

±10mV

OPA27

(b)

Common-mode rejection (CMR) of the INA117 is depend-

ent on the input resistor network, which is laser-trimmed for

accurate ratio matching. To maintain high CMR, it is impor-

tant to have low source impedances driving the two inputs.

A 75Ω resistance in series with pin 2 or 3 will decrease CMR

from 86dB to 72dB.

10kΩ

Offset adjustment is regulated—

insensitive to power supply variations.

100µA

1/2 REF200

Resistance in series with the reference pins will also degrade

CMR. A 4Ω resistance in series with pin 1 or 5 will decrease

CMRR from 86dB to 72dB.

V–

Most applications do not require trimming. Figures 2 and 3

show optional circuits that may be used for trimming offset

voltage and common-mode rejection.

FIGURE 2. Offset Voltage Trim Circuits.

Some applications, however, apply voltages to the reference

terminals (pins 1 and 5). A more complete transfer function

is:

TRANSFER FUNCTION

Most applications use the INA117 as a simple unity-gain

difference amplifier. The transfer function is:

V_O= V₃– V₂+ 19 • V₅– 18 • V₁

V₅and V₁are the voltages at pins 5 and 1.

V_O= V₃– V₂

V₃and V₂are the voltages at pins 3 and 2.

INA117

SBOS154A

MEASURING CURRENT

V–

V+

The INA117 can be used to measure a current by sensing the

voltage drop across a series resistor, R_S. Figure 4 shows the

INA117 used to measure the supply currents of a device

under test. The circuit in Figure 5 measures the output

current of a power supply. If the power supply has a sense

connection, it can be connected to the output side of R_Sto

eliminate the voltage-drop error. Another common applica-

tion is current-to-voltage conversion, as shown in Figure 6.

(+200V max)

+V_S

380kΩ

R_S

R_C*

V_O= R_SI_DUT+

I_DUT+

21.1kΩ

20kΩ

V–

V+

Device

Under

Test

380kΩ

V₂

V+

V–

I_DUT–

V_O= V₃– V₂

V₃

380kΩ

R_C*

21.1kΩ

20kΩ

R_S

380kΩ

V_O= R_SI_DUT–

200Ω

CMR

21.1kΩ

20kΩ

Adjust

10Ω

–V_S

(–200V max)

If offset adjust is also required,

connect to offset circuit, Figure 2.

*Not needed if R_Sis less than 20Ω —see text.

FIGURE 3. CMR Trim Circuit.

FIGURE 4. Measuring Supply Currents of Device Under

Test.

V–

V+

Power Supply

Out

Sense

380kΩ

±200V max

R_S

R_C*

V_O= I_LR_S

Optional Load

I_L

Sense Connection

(see text)

21.1kΩ

20kΩ

Load

*R_C= R_Snot needed if R_Sis less than 20Ω—see text.

FIGURE 5. Measuring Power Supply Output Current.

INA117

SBOS154A

V_S

(±200V max)

380kΩ

R_S

250Ω

_O= 1V to 5V

250Ω

4 to 20mA

R_C*

21.1kΩ

20kΩ

V_S

(±200V max)

(a)

*Not needed if R_Sis less than 20Ω—see text.

380kΩ

250Ω

R_C*

R_S

250Ω

_O= –1V to –5V

4 to 20mA

21.1kΩ

20kΩ

(b)

4 to 20mA

380kΩ

*Not needed if R_Sis less than 20Ω—see text.

250Ω

R_C*

R_S

250Ω

V_O= 1V to 5V

21.1kΩ

20kΩ

V_S

(±200V max)

4 to 20mA

(c)

*Not needed if R_Sis less than 20Ω—see text.

380kΩ

R_S

250Ω

V_O= –1V to –5V

250Ω

R_C*

21.1kΩ

20kΩ

V_S

(±200V max)

(d)

*Not needed if R_Sis less than 20Ω—see text.

FIGURE 6. Current to Voltage Converter.

INA117

SBOS154A

Example: For a 1V/mA transfer function, the nominal,

uncorrected value for R_Swould be 1kΩ. A slightly larger

value, R_S' = 1002.6Ω, compensates for the gain error due to

In all cases, the sense resistor imbalances the input resistor

matching of the INA117, degrading its CMR. Also, the input

impedance of the INA117 loads R_S, causing gain error in the

voltage-to-current conversion. Both of these errors can be

easily corrected.

The 380kΩ term in the equation for R_S' has a tolerance of

±25%, so sense resistors above approximately 400Ω may

require trimming to achieve gain accuracy better than 0.02%.

The CMR error can be corrected with the addition of a

compensation resistor, R_C, equal in value to R_Sas shown in

Figures 4, 5, and 6. If R_Sis less than 20Ω, the degradation

in CMR is negligible and R_Ccan be omitted. If R_Sis larger

than approximately 2kΩ, trimming R_Cmay be required to

achieve greater than 86dB CMR. This is because the actual

INA117 input impedances have 1% typical mismatch.

Of course, if a buffer amplifier is added as shown in Figure

7, both inputs see a low source impedance, and the sense

resistor is not loaded. As a result, there is no gain error or

CMR degradation. The buffer amplifier can operate as a

unity gain buffer or as an amplifier with non-inverting gain.

Gain added ahead of the INA117 improves both CMR and

signal-to-noise. Added gain also allows a lower voltage drop

across the sense resistor. The OPA1013 is a good choice for

the buffer amplifier since both its input and output can swing

close to its negative power supply.

If R_Sis more than approximately 100Ω, the gain error will

be greater than the 0.02% specification of the INA117. This

gain error can be corrected by slightly increasing the value

of R_S. The corrected value, R_S', can be calculated by:

R_S• 380kΩ

R_S' =

380kΩ – R_S

–15V

+15V

V₁

380kΩ

V_X

V₁

–21V to +10V

–5V to –36V

–20V to –51V

+15V

Ground

–15V

R₂*

R_S

380kΩ

R₂

R₁

V_O= I • R_S• (1 +

)

1/2

OPA1013

21.1kΩ

20kΩ

R₁*

*Or connect as buffer (R₂= 0, omit R₁).

–V_X

Regulated power for op amp allows –V_X

power to vary over wide range.

Op amp power can be derived with voltage-

dropping zener diode if –V_Xpower is relatively

constant.

180k Ω

_X= –30V to –200V

V_Z

MPS-A42

|V_X| = (5V to 36V) + V_Z

e.g., If V_Zis 50V then V_X= –55V to –86V.

0.01µF

IN4702

–V_X

V–

V+

380kΩ

R_S

380kΩ

_O= I • R_S

1/2

OPA1013

21.1kΩ

20kΩ

0.1µF

–V_X

FIGURE 7. Current Sensing with Input Buffer.

INA117

SBOS154A

Figure 8 shows very high input impedance buffer used to

measure low leakage currents. Here, the buffer op amp is

powered with an isolated, split-voltage power supply. Using

an isolated power supply allows full ±200V common-mode

input range.

these resistors produces approximately 550nV/√Hz noise.

The internal op amp contributes virtually no excess noise at

frequencies above 100Hz.

Many applications may be satisfied with less than the full

200kHz bandwidth of the INA117. In these cases, the noise

can be reduced with a low-pass filter on the output. The two-

pole filter shown in Figure 9 limits bandwidth to 1kHz and

reduces noise by more than 15:1. Since the INA117 has a

1/f noise corner frequency of approximately 100Hz, a cutoff

frequency below 100Hz will not further reduce noise.

NOISE PERFORMANCE

The noise performance of the INA117 is dominated by the

internal resistor network. The thermal or Johnson noise of

±200V max

+15V

Isolated DC/DC Converter

1kΩ

9kΩ

+15V

Com

–15V

PWS725

100MΩ

D_1,2

OPA111

I_L

100kΩ

Device

Under

Test

380kΩ

*D₁and D₂are each a 2N3904 transistor

base-collector junction (emitter open).

380kΩ

_O= I_Lx 10⁹

(1V/nA)

21.1kΩ

20kΩ

INA117

FIGURE 8. Leakage Current Measurement Circuit.

V+

V–

C₂

0.02µF

380kΩ

V₂

R₁

11.0kΩ

R₂

11.3kΩ

_O= V₂– V₃

OPA27

2-Pole Butterworth

Low-Pass Filter

V₃

C₁

0.01µF

21.1kΩ

20kΩ

BUTTERWORTH

LOW-PASS

f_–3dB

OUTPUT NOISE

(mVp-p)

R₁

R₂

C₁

C₂

200kHz

100kHz

10kHz

1kHz

≤100Hz⁽¹⁾

1.8

1.1

0.35

0.11

0.05

No Filter

11kΩ

11.3kΩ

100pF

1nF

10nF

0.1µF

200pF

2nF

20nF

0.2µF

See Application Bulletin AB-017 for other filters.

NOTE: (1) Since the INA117 has a 1/f noise corner frequency of approximately 100Hz,

bandwidth reduction below this frequency will not significantly reduce noise.

FIGURE 9. Output Filter for Noise Reduction.

INA117

SBOS154A

380kΩ

V–

V+

V₂

V₃– V₂

V_O

380kΩ

19 R₇

V₃

1 +

V₂

R₆

21.1kΩ

20kΩ

INA117

R₆

V_O= V₃– V₂+ V_X

V₃

R₇

21.1kΩ

20kΩ

Refer to Application

Bulletin AB-001 for

details.

INA117

OPA27

GAIN

(V/V)

R₇

(kΩ)

R₆

(kΩ)

V_X

1/2

1/4

1/5

1.05

3.16

4.22

FIGURE 11. Summing V_Xin Output.

FIGURE 10. Reducing Differential Gain.

(a)

R₁

R₂

380kΩ

V₂

Refer to Application Bulletin AB-010 for details.

R₃

380kΩ

_OUT= V₃– V₂

V₃

R₅

R₄

21.1kΩ

20kΩ

R₁

380kΩ

R₂

380kΩ

INA117

V₂

100pF

R₆

5kΩ

R₇

10kΩ

R₃

380kΩ

V₃

_OUT= V₃– V₂

A₁

OPA27

–V₃/20

R₅

21.1kΩ

R₄

20kΩ

R₉

400kΩ

100pF

INA117

R₁₀

10kΩ

100pF

R₆

R₇

R₈

5kΩ

10kΩ

A₂

OPA27

V_CM/20

(b)

A₁

OPA27

FIGURE 12. Common-Mode Voltage Monitoring.

INA117

SBOS154A

+9V

380kΩ

V₂

V_CMRange =

+50V to +200V

(V_S±9V)

25kΩ

V₃

V_O= V₃– V₂

21.1kΩ

20kΩ

(a)

INA117

–3V > V_O> –6V swap A₂pins

2 and 3 for +4V > V_O> 3V.

INA105

25kΩ

–9V

+9V

380kΩ

V₂

V_CMRange =

–12V to +200V

(V_S= ±9V)

25kΩ

V₃

V_O= V₃– V₂

21.1kΩ

20kΩ

(b)

0V > V_O> –6V swap A₂pins

2 and 3 for +4V > V_O> 0V.

INA117

INA105

10kΩ

25kΩ

1N4684

3.3V

(V–) +3.3V

–9V

380kΩ

V₂

V_CMRange = ±200V

(V_S= ±9V)

25kΩ

380kΩ

V₃

V_O= V₃– V₂

21.1kΩ

20kΩ

INA117

INA105

(c)

25kΩ

13.7kΩ

R₇

(V_S= ±9V)

1MΩ

Refer to Application Bulletin AB-015 for details.

R₈

OPA602

1MΩ

FIGURE 13. Offsetting or Boosting Common-Mode Voltage Range for Reduced Power-Supply Voltage Operation.

INA117

SBOS154A

+200V max

V–

V+

380kΩ

–

21.1kΩ

20kΩ

INA117

V–

V+

380kΩ

–

21.1kΩ

20kΩ

INA117

e_O= Cell Voltage

Repeat

for each

cell

MUX

V–

V+

380kΩ

–

21.1kΩ

20kΩ

INA117

Cell Select

V–

V+

380kΩ

–

21.1kΩ

20kΩ

INA117

–200V max

FIGURE 14. Battery Cell Voltage Monitor.

INA117

SBOS154A

–15V

+15V

V_S(200V max)

380kΩ

R₁

0.1Ω

–0.1 (I₁)

380kΩ

I₁

21.1kΩ

20kΩ

INA117

A₁

Load

V_IN

I_LOAD= I₁– I₂

+15V –15V

I₂

100kΩ

380kΩ

10kΩ

R₂

0.1Ω

V_O

V_O= I₁– I₂

= I_LOAD

380kΩ

–0.1 (I₂)

100kΩ

INA106

21.1kΩ

20kΩ

INA117

V_S(–200V max)

FIGURE 15. Measuring Amplifier Load Current.

R₁

R₂

380kΩ

V₂

R₃

380kΩ

V₃

V_OUT= V₃– V₂

R₅

R₄

21.1kΩ

20kΩ

INA117

R₁

C₁

1MΩ

0.47µF

Refer to Application

Bulletin AB-008 for

details.

OPA602

FIGURE 16. AC-Coupled INA117.

INA117

SBOS154A

PACKAGE OPTION ADDENDUM

www.ti.com

11-Apr-2013

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan Lead/Ball Finish

MSL Peak Temp

Op Temp (°C)

Top-Side Markings

Samples

Drawing

Qty

(1)

(2)

(3)

(4)

INA117AM

NRND

TO-99

LMC

Green (RoHS

& no Sb/Br)

N / A for Pkg Type

INA117AM

INA117AM4

INA117BM

OBSOLETE

NRND

TO-100

TO-99

LME

LMC

TBD

Call TI

Green (RoHS

& no Sb/Br)

N / A for Pkg Type

INA117BM

INA117BM-22

INA117BM-3

INA117BM-33

INA117BM1

INA117KU

OBSOLETE

ACTIVE

TO-100

ZZ (BB)

TO-100

SOIC

LME

ZZ001

LME

TBD

Call TI

2500

Green (RoHS

& no Sb/Br)

CU NIPDAU

Level-3-260C-168 HR

-40 to 85

INA

117KU

INA117KU/2K5

INA117KU/2K5G4

INA117KUG4

INA117P

ACTIVE

SOIC

PDIP

Green (RoHS

& no Sb/Br)

CU NIPDAU

Level-3-260C-168 HR

N / A for Pkg Type

INA

117KU

Green (RoHS

& no Sb/Br)

INA

117KU

Green (RoHS

& no Sb/Br)

-40 to 85

INA

117KU

Green (RoHS

& no Sb/Br)

INA117P

INA117P-BI

INA117PG4

OBSOLETE

ACTIVE

PDIP

TBD

Call TI

Green (RoHS

& no Sb/Br)

CU NIPDAU

N / A for Pkg Type

INA117P

INA117SM

NRND

TO-99

LMC

Green (RoHS

& no Sb/Br)

N / A for Pkg Type

INA117SM

INA117SMQ

Green (RoHS

& no Sb/Br)

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

11-Apr-2013

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability

information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that

lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between

the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight

in homogeneous material)

⁽³⁾MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)

Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a

continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

IMPORTANT NOTICE

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changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest

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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms

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INA117BM-3 [TI]

相关型号：

INA117BM-33

INA117BM1

INA117KU

INA117KU

INA117KU/2K5

INA117KU/2K5G4

INA117KUG4

INA117P

INA117P

INA117P-BI

INA117PG4

INA117SM