INA186A3IYFDR [TI]

INA186 Bidirectional, Low-Power, Zero-Drift, Wide Dynamic Range, Current-Sense Amplifier With Enable;
INA186A3IYFDR
型号: INA186A3IYFDR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

INA186 Bidirectional, Low-Power, Zero-Drift, Wide Dynamic Range, Current-Sense Amplifier With Enable

文件: 总46页 (文件大小:2602K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INA186  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
INA186 Bidirectional, Low-Power, Zero-Drift, Wide Dynamic Range,  
Current-Sense Amplifier With Enable  
1 Features  
3 Description  
Wide common-mode voltage range, VCM  
–0.2 V to +40 V  
:
The INA186 is a low-power, voltage-output, current-  
sense amplifier (also called a current-shunt monitor).  
This device is commonly used for overcurrent  
protection, precision current measurement for system  
optimization, or in closed-loop feedback circuits. The  
INA186 can sense drops across shunts at common-  
mode voltages from –0.2 V to +40 V, independent of  
the supply voltage.  
Low input bias currents, IIB: 500 pA (typical)  
(enables microamp current measurement)  
Low power:  
– Low supply voltage, VS: 1.7 V to 5.5 V  
– Low quiescent current, IQ: 48 µA (typical)  
Accuracy:  
– Common-mode rejection ratio: 120 dB  
(minimum)  
The low input bias current of the INA186 permits the  
use of larger current-sense resistors, thus providing  
accurate current measurements in the microamp  
range. The low offset voltage of the zero-drift  
architecture extends the dynamic range of the current  
measurement. This feature allows for smaller sense  
resistors with lower power loss, while still providing  
accurate current measurements.  
– Gain error, EG: ±1% (maximum)  
– Gain drift: 10 ppm/°C (maximum)  
– Offset voltage, VOS: ±50 μV (maximum)  
– Offset drift: 0.5 μV/°C (maximum)  
Bidirectional current sensing capability  
Gain options:  
– INA186A1: 25 V/V  
The INA186 operates from a single 1.7-V to 5.5-V  
power supply, and draws a maximum of 90 μA of  
supply current . Five fixed gain options are available:  
25 V/V, 50 V/V, 100 V/V, 200 V/V, or 500 V/V. The  
device is specified over the operating temperature  
range of –40°C to +125°C, and offered in SC70,  
SOT-23-THIN, and DSBGA packages. The SC70 and  
SOT-23 (DDF) packages support bidirectional current  
measurement, whereas the DSBGA package only  
supports current measurement in one direction.  
– INA186A2: 50 V/V  
– INA186A3: 100 V/V  
– INA186A4: 200 V/V  
– INA186A5: 500 V/V  
2 Applications  
Standard notebook PC  
Smartphone  
Consumer battery charger  
Baseband unit (BBU)  
Merchant network and server PSU  
Battery test  
Table 3-1. Device Information  
PART NUMBER  
PACKAGE(1)  
BODY SIZE (NOM)  
2.00 mm × 1.25 mm  
2.90 mm × 1.60 mm  
1.17 mm × 0.765 mm  
SC70 (6)  
INA186  
SOT-23 (8)  
DSBGA (6)  
(1) For all available packages, see the package option  
addendum at the end of the data sheet.  
Supply Voltage  
RSENSE  
Bus Voltage  
œ0.2 V to +40 V  
1.7 V to 5.5 V  
LOAD  
0.1 F  
0.5 nA  
(typ)  
0.5 nA  
(typ)  
ENABLE(1)  
VS  
INœ  
OUT  
ADC  
Microcontroller  
INA186  
IN+  
REF(2)  
GND  
(1) The ENABLE pin is available only  
in the DDF and YFD packages.  
(2) The REF pin is available only in  
the DDF and DCK packages.  
Typical Application  
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
Table of Contents  
1 Features............................................................................1  
2 Applications.....................................................................1  
3 Description.......................................................................1  
4 Revision History.............................................................. 2  
5 Pin Configuration and Functions...................................3  
6 Specifications.................................................................. 4  
6.1 Absolute Maximum Ratings ....................................... 4  
6.2 ESD Ratings .............................................................. 4  
6.3 Recommended Operating Conditions ........................4  
6.4 Thermal Information ...................................................4  
6.5 Electrical Characteristics ............................................5  
6.6 Typical Characteristics................................................6  
7 Detailed Description......................................................11  
7.1 Overview................................................................... 11  
7.2 Functional Block Diagram......................................... 11  
7.3 Feature Description...................................................12  
7.4 Device Functional Modes..........................................14  
8 Application and Implementation..................................18  
8.1 Application Information............................................. 18  
8.2 Typical Applications.................................................. 23  
9 Power Supply Recommendations................................24  
10 Layout...........................................................................25  
10.1 Layout Guidelines................................................... 25  
10.2 Layout Examples.................................................... 25  
11 Device and Documentation Support..........................28  
11.1 Documentation Support.......................................... 28  
11.2 Receiving Notification of Documentation Updates..28  
11.3 Support Resources................................................. 28  
11.4 Trademarks............................................................. 28  
11.5 Electrostatic Discharge Caution..............................28  
11.6 Glossary..................................................................28  
12 Mechanical, Packaging, and Orderable  
Information.................................................................... 28  
4 Revision History  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
Changes from Revision A (November 2019) to Revision B (July 2021)  
Page  
Added the YFD (DSBGA) package and associated content to data sheet ........................................................1  
Changed Overview section...............................................................................................................................11  
Added ENABLE pin information to the Functional Block Diagram ...................................................................11  
Added REF pin information to the Bidirectional Current Monitoring section.....................................................12  
Changed graphics in the Basic Connections section........................................................................................18  
Added REF pin information to the RSENSE and Device Gain Selection section................................................19  
Added the YFD (DSBGA) layout example to Layout Examples ...................................................................... 25  
Changes from Revision * (April 2019) to Revision A (November 2019)  
Page  
Added DDF (SOT-23) package and associated content to data sheet ..............................................................1  
Copyright © 2021 Texas Instruments Incorporated  
2
Submit Document Feedback  
Product Folder Links: INA186  
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
5 Pin Configuration and Functions  
1
2
3
REF  
GND  
VS  
1
2
3
6
5
4
OUT  
INœ  
A
IN+  
VS  
OUT  
IN+  
B
INœ  
GND  
ENABLE  
Not to scale  
Not to scale  
Figure 5-1. DCK Package 6-Pin SC70 Top View  
Figure 5-2. YFD Package 6-Pin DSBGA Top View  
VS  
ENABLE  
REF  
1
2
3
4
8
7
6
5
INœ  
IN+  
NC  
GND  
OUT  
Not to scale  
Figure 5-3. DDF Package 8-Pin SOT-23 Top View  
Table 5-1. Pin Functions  
PIN  
TYPE  
DESCRIPTION  
DCK  
(SC70)  
DDF  
(SOT-23)  
YFD  
(DSBGA)  
NAME  
Enable Pin. When this pin is driven to VS, the device is on and functions  
as a current sense amplifier. When this pin is driven to GND, the device  
ENABLE  
2
B3  
Digital input is off, the supply current is reduced, and the output is placed in a high-  
impedance state. This pin must be driven externally, or connected to VS if  
not used. DDF and YFD packages only.  
GND  
IN–  
2
5
4
8
B2  
B1  
Analog  
Ground  
Current-sense amplifier negative input. For high-side applications,  
Analog input connect to load side of sense resistor. For low-side applications, connect  
to ground side of sense resistor.  
Current-sense amplifier positive input. For high-side applications, connect  
Analog input to bus voltage side of sense resistor. For low-side applications, connect to  
load side of sense resistor.  
IN+  
NC  
4
6
7
6
5
A1  
No internal connection. Can be left floating, grounded, or connected to  
supply.  
OUT pin. This pin provides an analog voltage output that is the gained up  
Analog output voltage difference from the IN+ to the IN– pins, and is offset by the voltage  
applied to the REF pin.  
OUT  
A3  
Reference input. Enables bidirectional current sensing with an externally  
Analog input applied voltage. DCK and DDF packages only. Devices without a REF pin  
have the REF node grounded internally.  
REF  
VS  
1
3
3
1
A2  
Analog  
Power supply, 1.7 V to 5.5 V  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
3
Product Folder Links: INA186  
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)  
MIN  
MAX  
UNIT  
VS  
Supply voltage  
6
V
(2)  
Differential (VIN+) – (VIN–  
)
–42  
GND – 0.3  
GND – 0.3  
GND – 0.3  
42  
VIN+, VIN– Analog inputs  
V
VIN+, VIN–, with respect to GND(3)  
42  
VENABLE ENABLE  
REF, OUT(3)  
6
(VS) + 0.3  
5
V
V
Input current into any pin(3)  
mA  
°C  
°C  
°C  
TA  
Operating temperature  
Junction temperature  
Storage temperature  
–55  
–65  
150  
TJ  
150  
Tstg  
150  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress  
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under  
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability.  
(2) VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.  
(3) Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5 mA.  
6.2 ESD Ratings  
VALUE  
±3000  
±1000  
UNIT  
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)  
V(ESD)  
Electrostatic discharge  
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
6.3 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
GND – 0.2  
GND – 0.2  
1.7  
NOM  
MAX  
40  
UNIT  
V
VCM  
Common-mode input range  
Input pin voltage range  
VIN+, VIN–  
VS  
40  
V
Operating supply voltage  
Reference pin voltage range  
Operating free-air temperature  
5.5  
VS  
V
VREF  
TA  
GND  
V
–40  
125  
°C  
6.4 Thermal Information  
INA186  
THERMAL METRIC(1)  
YFD (DSBGA)  
6 PINS  
141.4  
1.1  
DCK (SC70)  
6 PINS  
170.7  
132.7  
65.3  
DDF (SOT23)  
UNIT  
8 PINS  
137.2  
38.4  
57.1  
5.1  
RθJA  
Junction-to-ambient thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top) Junction-to-case (top) thermal resistance  
RθJB  
ΨJT  
ΨJB  
Junction-to-board thermal resistance  
45.7  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
0.4  
45.7  
45.3  
65.2  
56.6  
N/A  
RθJC(bot) Junction-to-case (bottom) thermal resistance  
N/A  
N/A  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
Copyright © 2021 Texas Instruments Incorporated  
4
Submit Document Feedback  
Product Folder Links: INA186  
 
 
 
 
 
 
 
 
 
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
6.5 Electrical Characteristics  
at TA = 25°C, VSENSE = VIN+ – VIN–, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, and VENABLE = VS (unless otherwise  
noted)  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX UNIT  
INPUT  
CMRR  
VOS  
Common-mode rejection ratio VSENSE = 0 mV, VIN+ = –0.1 V to 40 V, TA = –40°C to +125°C  
120  
150  
–3  
dB  
Offset voltage, RTI(1)  
VS = 1.8 V, VSENSE = 0 mV  
±50  
µV  
dVOS/dT Offset drift, RTI  
VSENSE = 0 mV, TA = –40°C to +125°C  
0.05  
0.5 µV/°C  
±10 µV/V  
Power-supply rejection ratio,  
PSRR  
VSENSE = 0 mV, VS = 1.7 V to 5.5 V  
–1  
RTI  
IIB  
Input bias current  
Input offset current  
VSENSE = 0 mV  
VSENSE = 0 mV  
0.5  
3
nA  
nA  
IIO  
±0.07  
OUTPUT  
A1 devices  
25  
50  
A2 devices  
G
Gain  
A3 devices  
100  
V/V  
A4 devices  
200  
A5 devices  
500  
EG  
Gain error  
VOUT = 0.1 V to VS – 0.1 V  
TA = –40°C to +125°C  
VOUT = 0.1 V to VS – 0.1 V  
–0.04%  
2
±1%  
Gain error drift  
Nonlinearity error  
10 ppm/°C  
±0.01%  
Reference voltage rejection  
ratio  
VREF = 100 mV to VS – 100 mV,  
TA = –40°C to +125°C  
RVRR  
±2  
1
±10 µV/V  
nF  
Maximum capacitive load  
No sustained oscillation  
VOLTAGE OUTPUT  
VSP  
VSN  
Swing to VS power-supply rail VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C  
(VS) – 20  
(VS) – 40  
(VGND) + 1  
mV  
mV  
VS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C,  
Swing to GND  
(VGND) + 0.05  
VSENSE = –10 mV, VREF = 0 V  
VS = 1.8 V, RL = 10 kΩ to GND,  
Zero current output voltage  
VZL  
(VGND) + 2 (VGND) + 10  
mV  
TA = –40°C to +125°C, VSENSE = 0 mV, VREF = 0 V  
FREQUENCY RESPONSE  
A1 devices, CLOAD = 10 pF  
45  
37  
35  
33  
27  
0.3  
30  
A2 devices, CLOAD = 10 pF  
BW  
Bandwidth  
A3 devices, CLOAD = 10 pF  
kHz  
A4 devices, CLOAD = 10 pF  
A5 devices, CLOAD = 10 pF  
SR  
tS  
Slew rate  
VS = 5.0 V, VOUT = 0.5 V to 4.5 V  
From current step to within 1% of final value  
V/µs  
µs  
Settling time  
NOISE, RTI(1)  
Voltage noise density  
75  
nV/√Hz  
ENABLE  
IEN  
Leakage input current  
High-level input voltage  
Low-level input voltage  
Hysteresis  
0 V ≤ VENABLE ≤ VS  
DDF Package  
1
100  
6
nA  
V
VIH  
0.7 × VS  
0
VIL  
0.3 × VS  
V
VHYS  
VIH  
300  
mV  
V
High-level input voltage  
Low-level input voltage  
Hysteresis  
1.35  
0
5.5  
0.4  
VIL  
YFD package  
V
VHYS  
IODIS  
100  
1
mV  
µA  
Output leakage disabled  
VS = 5.0 V, VOUT = 0 V to 5.0 V, VENABLE = 0 V  
5
POWER SUPPLY  
VS = 1.8 V, VSENSE = 0 mV  
48  
65  
90  
µA  
µA  
IQ Quiescent current  
VS = 1.8 V, VSENSE = 0 mV, TA = –40°C to +125°C  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
5
Product Folder Links: INA186  
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
at TA = 25°C, VSENSE = VIN+ – VIN–, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, and VENABLE = VS (unless otherwise  
noted)  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX UNIT  
IQDIS  
Quiescent current disabled  
VENABLE = 0 V, VSENSE = 0 mV  
10  
100 nA  
(1) RTI = referred-to-input.  
6.6 Typical Characteristics  
at TA = 25°C, VSENSE = VIN+ – VIN-, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options  
(unless otherwise noted)  
60  
50  
40  
30  
20  
10  
0
140  
120  
100  
80  
60  
A1  
A2  
A3  
A4  
A5  
40  
20  
-10  
-20  
0
10  
10  
100  
1k 10k  
Frequency (Hz)  
100k  
1M  
100  
1k 10k  
Frequency (Hz)  
100k  
1M  
D019  
D020  
VS = 5 V  
Figure 6-1. Gain vs. Frequency  
VS = 5 V  
Figure 6-2. Power-Supply Rejection Ratio vs. Frequency  
Vs  
160  
140  
120  
100  
80  
-40°C  
25°C  
125°C  
Vs-0.4  
Vs-0.8  
GND+0.8  
GND+0.4  
GND  
60  
40  
0
1
2
3
4
5
6
7
Output Current (mA)  
8
9
10 11  
10  
100  
1k 10k  
Frequency (Hz)  
100k  
1M  
D010  
D021  
VS = 1.8 V  
Figure 6-4. Output Voltage Swing vs. Output Current  
A3 devices  
Figure 6-3. Common-Mode Rejection Ratio vs. Frequency  
Copyright © 2021 Texas Instruments Incorporated  
6
Submit Document Feedback  
Product Folder Links: INA186  
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
6.6 Typical Characteristics (continued)  
at TA = 25°C, VSENSE = VIN+ – VIN-, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options  
(unless otherwise noted)  
Vs  
0.25  
0.2  
-40°C  
25°C  
125°C  
Vs-1  
0.15  
0.1  
Vs-2  
0.05  
0
-0.05  
-0.1  
-0.15  
-0.2  
-0.25  
GND+2  
GND+1  
GND  
0
5
10  
15  
20  
25  
Common-Mode Voltage (V)  
30  
35  
40  
0
5
10  
15 20  
Output Current (mA)  
25  
30  
35  
D024  
D009  
VS = 5.0 V  
VS = 5.0 V  
Figure 6-5. Output Voltage Swing vs. Output Current  
Figure 6-6. Input Bias Current vs. Common-Mode Voltage  
0.25  
0.2  
80  
VS = 1.8 V  
VS = 3.3 V  
VS = 5 V  
75  
70  
65  
60  
55  
50  
45  
40  
35  
0.15  
0.1  
0.05  
0
-0.05  
-0.1  
-0.15  
-0.2  
-0.25  
0
5
10  
15  
20  
25  
Common-Mode Voltage (V)  
30  
35  
40  
D025  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VENABLE = 0 V  
Temperature (èC)  
D027  
Figure 6-7. Input Bias Current vs. Common-Mode Voltage  
(Shutdown)  
Figure 6-8. Quiescent Current vs. Temperature (Enabled)  
240  
70  
VS = 1.8 V  
VS = 3.3 V  
VS = 5.0 V  
VS = 1.8 V  
VS = 5 V  
210  
180  
150  
120  
90  
65  
60  
55  
50  
45  
40  
60  
30  
0
-30  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-5  
0
5
10  
15  
20  
25  
Common-Mode Voltage (V)  
30  
35  
40  
Temperature (èC)  
D002  
D029  
VENABLE = 0 V  
VS = 5.0 V  
Figure 6-9. Quiescent Current vs. Temperature (Disabled)  
Figure 6-10. Quiescent Current vs. Common-Mode Voltage  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
7
Product Folder Links: INA186  
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
6.6 Typical Characteristics (continued)  
at TA = 25°C, VSENSE = VIN+ – VIN-, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options  
(unless otherwise noted)  
100  
80  
70  
60  
50  
40  
30  
20  
10  
10  
100  
1k  
Frequency (Hz)  
10k  
100k  
Time (1 s/div)  
D030  
D031  
A3 devices  
A3 devices  
Figure 6-11. Input-Referred Voltage Noise vs. Frequency  
Figure 6-12. 0.1-Hz to 10-Hz Voltage Noise (Referred-To-Input)  
VCM  
VOUT  
Time (20 ms/div)  
Time (250 ms/div)  
D032  
D033  
VS = 5.0 V, A3 devices  
A3 devices  
Figure 6-13. Step Response (10-mVPP Input Step)  
Figure 6-14. Common-Mode Voltage Transient Response  
Inverting Input  
Output  
Non-inverting Input  
Output  
0 V  
0 V  
Time (250 ms/div)  
Time (250 ms/div)  
D034  
D035  
A3 devices  
VS = 5.0 V, A3 devices  
Figure 6-15. Inverting Differential Input Overload  
Figure 6-16. Noninverting Differential Input Overload  
Copyright © 2021 Texas Instruments Incorporated  
8
Submit Document Feedback  
Product Folder Links: INA186  
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
6.6 Typical Characteristics (continued)  
at TA = 25°C, VSENSE = VIN+ – VIN-, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options  
(unless otherwise noted)  
Supply Voltage  
Output Voltage  
Supply Voltage  
Output Voltage  
0 V  
0 V  
Time (10 ms/div)  
Time (100 ms/div)  
D036  
D037  
VS = 5.0 V, A3 devices  
VS = 5.0 V, A3 devices  
Figure 6-17. Start-Up Response  
Figure 6-18. Brownout Recovery  
100  
80  
Enable  
Output  
IBP  
IBN  
60  
40  
20  
0
-20  
-40  
-60  
-80  
0 V  
-100  
-110 -90 -70 -50 -30 -10 10 30 50 70 90 110  
Differential Input Voltage (mV)  
Time (250 ms/div)  
D039  
D038  
VS = 5.0 V, VREF = 2.5 V, A1 devices  
VS = 5.0 V, A3 devices  
Figure 6-20. IB+ and IB– vs. Differential Input Voltage  
Figure 6-19. Enable and Disable Response  
25  
1.25  
IBP  
IBN  
-40èC  
1
25èC  
125èC  
15  
5
0.75  
0.5  
0.25  
0
-5  
-0.25  
-0.5  
-0.75  
-1  
-15  
-25  
0
0.5  
1
1.5  
2
2.5  
3
Output Voltage (V)  
3.5  
4
4.5  
5
-60  
-40  
-20  
0
20  
Differential Input Voltage (mV)  
40  
60  
D040  
D047  
VS = 5.0 V, VENABLE = 0 V, VREF = 2.5 V  
VS = 5.0 V, VREF = 2.5 V, A2, A3, A4, A5 devices  
Figure 6-22. Output Leakage vs. Output Voltage (A1, A2, and A3  
Devices)  
Figure 6-21. IB+ and IB– vs. Differential Input Voltage  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
9
Product Folder Links: INA186  
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
6.6 Typical Characteristics (continued)  
at TA = 25°C, VSENSE = VIN+ – VIN-, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options  
(unless otherwise noted)  
5000  
1000  
3
2.5  
2
25èC  
-40èC  
125èC  
A5  
A1  
A4  
1.5  
1
A2  
A3  
100  
10  
1
0.5  
0
-0.5  
-1  
Gain Variants  
A1  
A2  
A3  
A4  
A5  
-1.5  
-2  
-2.5  
0.1  
10  
0
0.5  
1
1.5  
2
2.5  
3
Output Voltage (V)  
3.5  
4
4.5  
5
100  
1k  
10k  
Frequency (Hz)  
100k  
1M  
10M  
D048  
D050  
VS = 5.0 V, VENABLE = 0 V, VREF = 2.5 V  
VS = 5.0 V, VCM = 0 V  
Figure 6-24. Output Impedance vs. Frequency  
Figure 6-23. Output Leakage vs. Output Voltage (A4 and A5  
Devices)  
Copyright © 2021 Texas Instruments Incorporated  
10  
Submit Document Feedback  
Product Folder Links: INA186  
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
7 Detailed Description  
7.1 Overview  
The INA186 is a low bias current, low offset, 40-V common-mode, current-sensing amplifier. The DDF SOT-23  
and YFD DSBGA packages also come with an enable pin. The INA186 is a specially designed, current-sensing  
amplifier that accurately measures voltages developed across current-sensing resistors on common-mode  
voltages that far exceed the supply voltage. Current is measured on input voltage rails as high as 40 V at VIN+  
and VIN–, with a supply voltage, VS, as low as 1.7 V. When disabled, the output goes to a high-impedance state,  
and the supply current draw is reduced to less than 0.1 µA. The INA186 is intended for use in both low-side and  
high-side current-sensing configurations where high accuracy and low current consumption are required.  
7.2 Functional Block Diagram  
ENABLE(1)  
VS  
INA186  
IN+  
œ
œ
+
OUT  
œ
+
+
REF(2)  
INœ  
GND  
1. The ENABLE pin is available only in the DDF and YFD packages.  
2. YFD packages without a REF pin have this node internally connected to GND.  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
11  
Product Folder Links: INA186  
 
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
7.3 Feature Description  
7.3.1 Precision Current Measurement  
The INA186 allows for accurate current measurements over a wide dynamic range. The high accuracy of the  
device is attributable to the low gain error and offset specifications. The offset voltage of the INA186 is less than  
±50 µV. In this case, the low offset improves the accuracy at light loads when VIN+ approaches VIN–. Another  
advantage of low offset is the ability to use a lower-value shunt resistor that reduces the power loss in the  
current-sense circuit, and improves the power efficiency of the end application.  
The maximum gain error of the INA186 is specified at ±1%. As the sensed voltage becomes much larger than  
the offset voltage, the gain error becomes the dominant source of error in the current-sense measurement.  
When the device monitors currents near the full-scale output range, the total measurement error approaches the  
value of the gain error.  
7.3.2 Low Input Bias Current  
The INA186 is different from many current-sense amplifiers because this device offers very low input bias  
current. The low input bias current of the INA186 has three primary benefits.  
The first benefit is the reduction of the current consumed by the device . Classical current-sense amplifier  
topologies typically consume tens of microamps of current at the inputs. For these amplifiers, the input current is  
the result of the resistor network that sets the gain and additional current to bias the input amplifier. To reduce  
the bias current to near zero, the INA186 uses a capacitively coupled amplifier on the input stage, followed by a  
difference amplifier on the output stage.  
The second benefit of low bias current is the ability to use input filters to reject high-frequency noise before  
the signal is amplified. In a traditional current-sense amplifier, the addition of input filters comes at the cost  
of reduced accuracy. However, as a result of the low bias currents, input filters have little effect on the  
measurement accuracy of the INA186.  
The third benefit of low bias current is the ability to use a larger current-sense resistor. This ability allows the  
device to accurately monitor currents as low as 1 µA.  
7.3.3 Low Quiescent Current With Output Enable  
The device features low quiescent current (IQ), while still providing sufficient small-signal bandwidth to be usable  
in most applications. The quiescent current of the INA186 is only 48 µA (typical), while providing a small-signal  
bandwidth of 35 kHz in a gain of 100. The low IQ and good bandwidth allow the device to be used in many  
portable electronic systems without excessive drain on the battery. Because many applications only need to  
periodically monitor current, the INA186 features an enable pin that turns off the device until needed. When in  
the disabled state, the INA186 typically draws 10 nA of total supply current.  
7.3.4 Bidirectional Current Monitoring  
The INA186 devices that feature a REF pin can sense current flow through a sense resistor in both directions.  
The bidirectional current-sensing capability is achieved by applying a voltage at the REF pin to offset the output  
voltage. A positive differential voltage sensed at the inputs results in an output voltage that is greater than the  
applied reference voltage. Likewise, a negative differential voltage at the inputs results in output voltage that  
is less than the applied reference voltage. Use Equation 1 to calculate the output voltage of the current-sense  
amplifier.  
VOUT = ILOADì RSENSE ìGAIN + V  
(
)
REF  
(1)  
where  
ILOAD is the load current to be monitored.  
RSENSE is the current-sense resistor.  
GAIN is the gain option of the selected device.  
VREF is the voltage applied to the REF pin.  
Copyright © 2021 Texas Instruments Incorporated  
12  
Submit Document Feedback  
Product Folder Links: INA186  
 
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
7.3.5 High-Side and Low-Side Current Sensing  
The INA186 supports input common-mode voltages from –0.2 V to +40 V. Because of the internal topology,  
the common-mode range is not restricted by the power-supply voltage (VS). With the ability to operate with  
common-mode voltages greater or less than VS, Figure 7-1 shows an example on how the INA186 can be used  
in high-side and low-side current-sensing applications.  
Bus Supply  
up to +40 V  
IN+  
High-Side Sensing  
RSENSE  
Common-mode voltage (VCM  
is bus-voltage dependent.  
)
INœ  
LOAD  
IN+  
Low-Side Sensing  
Common-mode voltage (VCM  
is always near ground and is  
)
RSENSE  
isolated from bus-voltage spikes.  
INœ  
Figure 7-1. High-Side and Low-Side Sensing Connections  
7.3.6 High Common-Mode Rejection  
The INA186 uses a capacitively coupled amplifier on the front end. Therefore, dc common-mode voltages are  
blocked from downstream circuits, resulting in very high common-mode rejection. Typically, the common-mode  
rejection of the INA186 is approximately 150 dB. The ability to reject changes in the dc common-mode voltage  
allows the INA186 to monitor both high-voltage and low-voltage rail currents with very little change in the offset  
voltage.  
7.3.7 Rail-to-Rail Output Swing  
The INA186 allows linear current-sensing operation with the output close to the supply rail and ground. The  
maximum specified output swing to the positive rail is VS – 40 mV, and the maximum specified output swing  
to GND is only GND + 1 mV. The close-to-rail output swing is useful to maximize the usable output range,  
particularly when operating the device from a 1.8-V supply.  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
13  
Product Folder Links: INA186  
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
7.4 Device Functional Modes  
7.4.1 Normal Operation  
The INA186 is in normal operation when the following conditions are met:  
The power-supply voltage (VS) is between 1.7 V and 5.5 V.  
The common-mode voltage (VCM) is within the specified range of –0.2 V to +40 V.  
The maximum differential input signal times the gain plus VREF is less than the positive swing voltage VSP  
The ENABLE pin is driven or connected to VS.  
The minimum differential input signal times the gain plus VREF is greater than the zero load swing to GND,  
.
VZL (see Rail-to-Rail Output Swing).  
For devices that do not feature a REF pin that value for VREF will be zero. During normal operation, this device  
produces an output voltage that is the amplified representation of the difference voltage from IN+ to IN– plus the  
voltage applied to the REF pin.  
7.4.2 Unidirectional Mode  
This device can be configured to monitor current flowing in one direction (unidirectional) or in both directions  
(bidirectional) depending on how the REF pin is connected. Figure 7-2 shows the most common case is  
unidirectional where the output is set to ground when no current is flowing by connecting the REF pin to ground.  
When the current flows from the bus supply to the load, the input voltage from IN+ to IN– increases and causes  
the output voltage at the OUT pin to increase.  
Bus Voltage  
up to 40 V  
VS  
1.7 V to 5.5 V  
RSENSE  
CBYPASS  
0.1 µF  
Load  
ISENSE  
VS  
INA186  
INœ  
Capacitively  
Coupled  
Amplifier  
œ
OUT  
VOUT  
+
REF  
IN+  
GND  
Figure 7-2. Typical Unidirectional Application  
The linear range of the output stage is limited by how close the output voltage can approach ground under  
zero input conditions. The zero current output voltage of the INA186 is very small and for most unidirectional  
applications the REF pin is simply grounded. However, if the measured current multiplied by the current sense  
resistor and device gain is less than the zero current output voltage, then bias the REF pin to a convenient value  
above the zero current output voltage to get the output into the linear range of the device. To limit common-mode  
rejection errors, buffer the reference voltage connected to the REF pin.  
A less-frequently used output biasing method is to connect the REF pin to the power-supply voltage, VS. This  
method results in the output voltage saturating at 40 mV less than the supply voltage when no differential input  
voltage is present. This method is similar to the output saturated low condition with no differential input voltage  
when the REF pin is connected to ground. The output voltage in this configuration only responds to currents  
that develop negative differential input voltage relative to the device IN– pin. Under these conditions, when  
Copyright © 2021 Texas Instruments Incorporated  
14  
Submit Document Feedback  
Product Folder Links: INA186  
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
the negative differential input signal increases, the output voltage moves downward from the saturated supply  
voltage. The voltage applied to the REF pin must not exceed VS.  
Another use for the REF pin in unidirectional operation is to level shift the output voltage. Figure 7-3 shows an  
application where the device ground is set to a negative voltage so currents biased to negative supplies, as  
seen in optical networking cards, can be measured. The GND of the INA186 can be set to negative voltages,  
as long as the inputs do not violate the common-mode range specification and the voltage difference between  
VS and GND does not exceed 5.5 V. In this example, the output of the INA186 is fed into a positive-biased  
analog-to-digital converter (ADC). By grounding the REF pin, the voltages at the output will be positive and not  
damage the ADC. To make sure the output voltage never goes negative, the supply sequencing must be the  
positive supply first, followed by the negative supply.  
+ 1.8 V  
-3.3 V  
CBYPASS  
0.1 µF  
RSENSE  
Load  
VS  
INA186  
IN-  
Capacitively  
Coupled  
Amplifier  
œ
OUT  
ADC  
+
REF  
IN+  
GND  
- 3.3 V  
Figure 7-3. Using the REF Pin to Level-Shift Output Voltage  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
15  
Product Folder Links: INA186  
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
7.4.3 Bidirectional Mode  
The INA186 is a bidirectional current-sense amplifier capable of measuring currents through a resistive shunt  
in two directions. This bidirectional monitoring is common in applications that include charging and discharging  
operations where the current flowing through the resistor can change directions.  
Bus Voltage  
up to 40 V  
VS  
CBYPASS  
0.1 µF  
RSENSE  
1.7 V to 5.5 V  
Load  
ISENSE  
VS  
INA186  
INœ  
Reference  
Voltage  
Capacitively  
Coupled  
Amplifier  
œ
OUT  
VOUT  
+
REF  
+
IN+  
œ
GND  
Figure 7-4. Bidirectional Application  
By applying a voltage to the REF pin, Figure 7-4 shows how you can measure this current flowing in both  
directions. The voltage applied to REF (VREF) sets the output state that corresponds to the zero-input level state.  
The output then responds by increasing above VREF for positive differential signals (relative to the IN– pin) and  
responds by decreasing below VREF for negative differential signals. This reference voltage applied to the REF  
pin can be set anywhere between 0 V to VS. For bidirectional applications, VREF is typically set at VS/2 for equal  
signal range in both current directions. In some cases, VREF is set at a voltage other than VS/2; for example,  
when the bidirectional current and corresponding output signal do not need to be symmetrical.  
7.4.4 Input Differential Overload  
If the differential input voltage (VIN+ – VIN–) times gain exceeds the voltage swing specification, the INA186  
drives its output as close as possible to the positive supply or ground, and does not provide accurate  
measurement of the differential input voltage. If this input overload occurs during normal circuit operation, then  
reduce the value of the shunt resistor or use a lower-gain version with the chosen sense resistor to avoid this  
mode of operation. If a differential overload occurs in a time-limited fault event, then the output of the INA186  
returns to the expected value approximately 80 µs after the fault condition is removed.  
Copyright © 2021 Texas Instruments Incorporated  
16  
Submit Document Feedback  
Product Folder Links: INA186  
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
7.4.5 Shutdown  
The INA186 features an active-high ENABLE pin that shuts down the device when pulled to ground. When  
the device is shut down, the quiescent current is reduced to 10 nA (typical), and the output goes to a high-  
impedance state. In a battery-powered application, the low quiescent current extends the battery lifetime when  
the current measurement is not needed. When the ENABLE pin is driven to the supply voltage, the device turns  
back on. The typical output settling time when enabled is 130 µs.  
The output of the INA186 goes to a high-impedance state when disabled. Figure 7-5 shows how to connect  
multiple outputs of the INA186 together to a single ADC or measurement device.  
When connected in this way, enable only one INA186 at a time, and make sure all devices have the same supply  
voltage.  
RSENSE  
Bus Voltage1  
upto to +40 V  
Supply Voltage  
1.7 V to 5.5 V  
LOAD  
0.1 F  
GPIO1  
ENABLE  
VS  
INœ  
Microcontroller  
ADC  
OUT  
INA186  
IN+  
GPIO2  
REF  
GND  
RSENSE  
Bus Voltage2  
upto to +40 V  
Supply Voltage  
1.7 V to 5.5 V  
LOAD  
0.1 F  
ENABLE  
VS  
INœ  
OUT  
INA186  
IN+  
REF  
GND  
Figure 7-5. Multiplexing Multiple Devices With the ENABLE Pin  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
17  
Product Folder Links: INA186  
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
8 Application and Implementation  
Note  
Information in the following applications sections is not part of the TI component specification,  
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for  
determining suitability of components for their purposes, as well as validating and testing their design  
implementation to confirm system functionality.  
8.1 Application Information  
The INA186 amplifies the voltage developed across a current-sensing resistor as current flows through the  
resistor to the load or ground. The high common-mode rejection of the INA186 makes it usable over a wide  
range of voltage rails while still maintaining an accurate current measurement.  
8.1.1 Basic Connections  
Figure 8-1 shows the basic connections of the INA186. Place the device as close as possible to the current  
sense resistor and connect the input pins (IN+ and IN–) to the current sense resistor through kelvin connections.  
If present, the ENABLE pin must be controlled externally or connected to VS if not used.  
Supply Voltage  
1.7 V to 5.5 V  
RSENSE  
Bus Voltage  
œ0.2 V to +40 V  
LOAD  
0.1 F  
0.5 nA  
(typ)  
0.5 nA  
(typ)  
ENABLE(1)  
VS  
INœ  
OUT  
ADC  
Microcontroller  
INA186  
IN+  
REF(2)  
GND  
(1) The ENABLE pin is available only  
in the DDF and YFD packages.  
(2) The REF pin is available only in  
the DDF and DCK packages.  
A. To help eliminate ground offset errors between the device and the analog-to-digital converter (ADC), connect the REF pin to the ADC  
reference input. When driving SAR ADCs, filter or buffer the output of the INA186 before connecting directly to the ADC.  
Figure 8-1. Basic Connections  
Copyright © 2021 Texas Instruments Incorporated  
18  
Submit Document Feedback  
Product Folder Links: INA186  
 
 
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
8.1.2 RSENSE and Device Gain Selection  
The accuracy of any current-sense amplifier is maximized by choosing the current-sense resistor to be as large  
as possible. A large sense resistor maximizes the differential input signal for a given amount of current flow  
and reduces the error contribution of the offset voltage. However, there are practical limits as to how large the  
current-sense resistor can be in a given application because of the resistor size and maximum allowable power  
dissipation. Equation 2 gives the maximum value for the current-sense resistor for a given power dissipation  
budget:  
PDMAX  
RSENSE  
<
2
IMAX  
(2)  
where:  
PDMAX is the maximum allowable power dissipation in RSENSE  
IMAX is the maximum current that will flow through RSENSE  
.
.
An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply  
voltage, VS, and device swing-to-rail limitations. In order to make sure that the current-sense signal is properly  
passed to the output, both positive and negative output swing limitations must be examined. Equation 3 provides  
the maximum values of RSENSE and GAIN to keep the device from exceeding the positive swing limitation.  
IMAX ìRSENSE ìGAIN < VSP - VREF  
(3)  
where:  
IMAX is the maximum current that will flow through RSENSE  
GAIN is the gain of the current-sense amplifier.  
VSP is the positive output swing as specified in the data sheet.  
.
VREF is the externally applied voltage on the REF pin. This voltage is zero for devices without a REF pin.  
To avoid positive output swing limitations when selecting the value of RSENSE, there is always a trade-off  
between the value of the sense resistor and the gain of the device under consideration. If the sense resistor  
selected for the maximum power dissipation is too large, then it is possible to select a lower-gain device in order  
to avoid positive swing limitations.  
The negative swing limitation places a limit on how small the sense resistor value can be for a given application.  
Equation 4 provides the limit on the minimum value of the sense resistor.  
IMIN ìRSENSE ìGAIN > VSN - VREF  
(4)  
where:  
IMIN is the minimum current that will flow through RSENSE  
GAIN is the gain of the current-sense amplifier.  
VSN is the negative output swing of the device (see Rail-to-Rail Output Swing).  
.
VREF is the externally applied voltage on the REF pin. This voltage is zero for devices without a REF pin.  
In addition to adjusting RSENSE and the device gain, the voltage applied to the REF pin can be slightly increased  
above GND to avoid negative swing limitations.  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
19  
Product Folder Links: INA186  
 
 
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
8.1.3 Signal Conditioning  
When performing accurate current measurements in noisy environments, the current-sensing signal is often  
filtered. The INA186 features low input bias currents. Therefore, adding a differential mode filter to the input  
without sacrificing the current-sense accuracy is possible. Filtering at the input is advantageous because this  
action attenuates differential noise before the signal is amplified. Figure 8-2 provides an example of how to use a  
filter on the input pins of the device.  
Bus Voltage  
up to 40 V  
VS  
1.7 V to 5.5 V  
CBYPASS  
0.1 µF  
RSENSE  
Load  
VS  
Capacitively Coupled  
Amplifier  
INA186  
RF  
INœ  
1
CF  
œ
f3dB  
=
OUT  
VOUT  
RDIFF  
4pRFCF  
+
RF  
REF  
IN+  
GND  
Figure 8-2. Filter at the Input Pins  
Figure 8-2 shows the differential input impedance (RDIFF) limits the maximum value for RF. Figure 8-3 shows the  
value of RDIFF is a function of the device temperature.  
6
A1  
A2, A3, A4, A5  
5
4
3
2
1
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature (èC)  
D115  
Figure 8-3. Differential Input Impedance vs. Temperature  
Copyright © 2021 Texas Instruments Incorporated  
20  
Submit Document Feedback  
Product Folder Links: INA186  
 
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
As the voltage drop across the sense resistor (VSENSE) increases, the amount of voltage dropped across the  
input filter resistors (RF) also increases. The increased voltage drop results in additional gain error. The error  
caused by these resistors is calculated by the resistor divider equation shown in Equation 5.  
«
RDIFF  
Error(%) = 1-  
ì100  
÷
÷
RSENSE+ RDIFF + 2ìR  
(
)
F
(5)  
where:  
RDIFF is the differential input impedance.  
RF is the added value of the series filter resistance.  
The input stage of the INA186 uses a capacitive feedback amplifier topology in order to achieve high dc  
precision. As a result, periodic high-frequency shunt voltage (or current) transients of significant amplitude (10  
mV or greater) and duration (hundreds of nanoseconds or greater) may be amplified by the INA186, even  
though the transients are greater than the device bandwidth. Use a differential input filter in these applications to  
minimize disturbances at the INA186 output.  
The high input impedance and low bias current of the INA186 provide flexibility in the input filter design without  
impacting the accuracy of current measurement. For example, set RF = 100 Ω and CF = 22 nF to achieve  
a low-pass filter corner frequency of 36.2 kHz. These filter values significantly attenuate most unwanted high-  
frequency signals at the input without severely impacting the current sensing bandwidth or precision. If a lower  
corner frequency is desired, increase the value of CF.  
Filtering the input filters out differential noise across the sense resistor. If high-frequency, common-mode noise  
is a concern, add an RC filter from the OUT pin to ground. The RC filter helps filter out both differential and  
common mode noise, as well as internally generated noise from the device. The value for the resistance of the  
RC filter is limited by the impedance of the load. Any current drawn by the load manifests as an external voltage  
drop from the INA186 OUT pin to the load input. To select the optimal values for the output filter, use Output  
Impedance vs. Frequency and see the Closed-Loop Analysis of Load-Induced Amplifier Stability Issues Using  
ZOUT application report  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
21  
Product Folder Links: INA186  
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
8.1.4 Common-Mode Voltage Transients  
With a small amount of additional circuitry, the INA186 can be used in circuits subject to transients that exceed  
the absolute maximum voltage ratings. The most simple way to protect the inputs from negative transients is to  
add resistors in series with the IN– and IN+ pins. Use resistors that are 1 kΩ or less, and limit the current in the  
ESD structures to less than 5 mA. For example, using 1-kΩ resistors in series with the INA186 allows voltages  
as low as –5 V, while limiting the ESD current to less than 5 mA. Use the circuits shown in Figure 8-4 and Figure  
8-5 if protection from high-voltage or more-negative, common-voltage transients is needed. When implementing  
these circuits, use only Zener diodes or Zener-type transient absorbers (sometimes referred to as transzorbs);  
any other type of transient absorber has an unacceptable time delay. Start by adding a pair of resistors as a  
working impedance for the Zener diode (see Figure 8-4). Keep these resistors as small as possible; most often,  
use around 100 Ω. See Signal Conditioning for information on how larger values can be used with an effect on  
gain. This circuit limits only short-term transients; therefore, many applications are satisfied with a 100-Ω resistor  
along with conventional Zener diodes of the lowest acceptable power rating. This combination uses the least  
amount of board space. These diodes can be found in packages as small as  
SOT-523 or SOD-523.  
Bus Voltage  
up to 40 V  
VS  
1.7 V to 5.5 V  
CBYPASS  
0.1 µF  
RSENSE  
Load  
VS  
INA186  
RPROTECT  
INœ  
< 1 kW  
Capacitively  
Coupled  
Amplifier  
œ
OUT  
VOUT  
+
RPROTECT  
REF  
IN+  
< 1 kW  
GND  
Figure 8-4. Transient Protection Using Dual Zener Diodes  
In the event that low-power Zener diodes do not have sufficient transient absorption capability, a higher-power  
transzorb must be used. The most package-efficient solution involves using a single transzorb and back-to-back  
diodes between the device inputs, as shown in Figure 8-5. The most space-efficient solutions are dual, series-  
connected diodes in a single SOT-523 or SOD-523 package. In either of the examples shown in Figure 8-4 and  
Figure 8-5, the total board area required by the INA186 with all protective components is less than that of an  
SO-8 package, and only slightly greater than that of an VSSOP-8 package.  
Bus Voltage  
up to 40 V  
VS  
1.7 V to 5.5 V  
CBYPASS  
0.1 µF  
RSENSE  
Load  
VS  
INA186  
RPROTECT  
INœ  
< 1 kW  
Capacitively  
Coupled  
Amplifier  
œ
OUT  
Transorb  
VOUT  
+
RPROTECT  
REF  
IN+  
< 1 kW  
GND  
Figure 8-5. Transient Protection Using a Single Transzorb and Input Clamps  
For more information, see the Current Shunt Monitor With Transient Robustness reference design.  
Copyright © 2021 Texas Instruments Incorporated  
22  
Submit Document Feedback  
Product Folder Links: INA186  
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
8.2 Typical Applications  
The low input bias current of the INA186 allows accurate monitoring of small-value currents. To accurately  
monitor currents in the microamp range, increase the value of the sense resistor to increase the sense  
voltage so that the error introduced by the offset voltage is small. Figure 8-6 shows the circuit configuration  
for monitoring low-value currents. As a result of the differential input impedance of the INA186, limit the value of  
RSENSE to 1 kΩ or less for best accuracy.  
RSENSE 1 kO  
5 V  
12 V  
LOAD  
0.1 F  
VS  
INœ  
OUT  
INA186  
IN+  
REF  
GND  
Figure 8-6. Microamp Current Measurement  
8.2.1 Design Requirements  
Table 8-1 lists the design requirements for the circuit shown in Figure 8-6.  
Table 8-1. Design Parameters  
DESIGN PARAMETER  
EXAMPLE VALUE  
Power-supply voltage (VS)  
5 V  
12 V  
Bus supply rail (VCM  
)
Minimum sense current (IMIN  
)
1 µA  
Maximum sense current (IMAX  
Device gain (GAIN)  
)
150 µA  
25 V/V  
0 V  
Reference voltage (VREF  
)
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
23  
Product Folder Links: INA186  
 
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
8.2.2 Detailed Design Procedure  
The maximum value of the current-sense resistor is calculated based on choice of gain, value of the maximum  
current the be sensed (IMAX), and the power-supply voltage (VS). When operating at the maximum current, the  
output voltage must not exceed the positive output swing specification, VSP. Using Equation 6, for the given  
design parameters the maximum value for RSENSE is calculated to be 1.321 kΩ.  
VSP  
RSENSE  
<
IMAX ìGAIN  
(6)  
However, because this value exceeds the maximum recommended value for RSENSE, a resistance value of 1  
kΩ must be used. When operating at the minimum current value, IMIN the output voltage must be greater than  
the swing to GND (VSN), specification. For this example, the output voltage at the minimum current is calculated  
using Equation 7 to be 25 mV, which is greater than the value for VSN  
.
VOUTMIN = IMIN ìRSENSE ìGAIN  
(7)  
8.2.3 Application Curve  
Figure 8-7 shows the output of the device under the conditions given in Table 8-1 and with RSENSE = 1 kΩ.  
4
3.5  
3
2.5  
2
1.5  
1
0.5  
0
0
25  
50  
75  
Input Current (µA)  
100  
125  
150  
D031  
Figure 8-7. Typical Application DC Transfer Function  
9 Power Supply Recommendations  
The input circuitry of the INA186 accurately measures beyond the power-supply voltage, VS. For example, VS  
can be 5 V, whereas the bus supply voltage at IN+ and IN– can be as high as 40 V. However, the output voltage  
range of the OUT pin is limited by the voltage on the VS pin. The INA186 also withstands the full differential input  
signal range up to 40 V at the IN+ and IN– input pins, regardless of whether the device has power applied at the  
VS pin. There is no sequencing requirement for VS and VIN+ or VIN–  
.
Copyright © 2021 Texas Instruments Incorporated  
24  
Submit Document Feedback  
Product Folder Links: INA186  
 
 
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
10 Layout  
10.1 Layout Guidelines  
Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique  
makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing  
of the current-sensing resistor commonly results in additional resistance present between the input pins.  
Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can  
cause significant measurement errors.  
Place the power-supply bypass capacitor as close as possible to the device power supply and ground pins.  
The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added  
to compensate for noisy or high-impedance power supplies.  
When routing the connections from the current-sense resistor to the device, keep the trace lengths as short  
as possible. The input filter capacitor CF should be placed as close as possible to the input pins of the device.  
10.2 Layout Examples  
Current Sense  
Output  
Connect REF to GND for  
Unidirectional Measurement  
or to External Reference for  
Bidirectional Measurement  
n low  
Note: RF and CF are optional i  
noise/ripple environments  
RF  
CF  
1
2
3
6
5
4
OUT  
IN-  
REF  
GND  
VS  
INA186  
VIA to Ground Plane  
RSHUNT  
Supply Voltage  
(1.7 V to 5.5 V)  
IN+  
CBYPASS  
RF  
VIA to Ground Plane  
Figure 10-1. Recommended Layout for SC70 (DCK) Package  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
25  
Product Folder Links: INA186  
 
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
n low  
Note: RF and CF are optional i  
noise/ripple environments  
RF  
CF  
CBYPASS  
Supply Voltage  
(1.7 V to 5.5 V)  
VS  
1
2
3
4
8
7
6
5
IN-  
RSHUNT  
TI Device  
IN+  
ENABLE  
Connect to VS  
if not used  
REF  
N.C.  
OUT  
RF  
IN+  
GND  
VIA to Ground Plane  
Current Sense  
Output  
Connect REF to GND for  
Unidirectional Measurement  
or to External Reference for  
Bidirectional Measurement  
Figure 10-2. Recommended Layout for SOT-23 (DDF) Package  
Copyright © 2021 Texas Instruments Incorporated  
26  
Submit Document Feedback  
Product Folder Links: INA186  
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
RSHUNT  
(1)  
(1)  
RF  
RF  
(1)  
CF  
INœ  
IN+  
VS  
B1  
B2  
B3  
A1  
A2  
A3  
Connect to Supply  
(1.7 V to 5.5 V)  
VIA to Ground  
Plane  
GND  
CBYPASS  
ENABLE  
OUT  
Current  
Sense Output  
Connect to Control or VS  
(Do not float)  
Figure 10-3. Recommended Layout DSBGA (YFD) Package  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
27  
Product Folder Links: INA186  
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
11 Device and Documentation Support  
11.1 Documentation Support  
11.1.1 Related Documentation  
For related documentation see the following: Texas Instruments, INA186EVM user's guide  
11.2 Receiving Notification of Documentation Updates  
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on  
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For  
change details, review the revision history included in any revised document.  
11.3 Support Resources  
TI E2Esupport forums are an engineer's go-to source for fast, verified answers and design help — straight  
from the experts. Search existing answers or ask your own question to get the quick design help you need.  
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do  
not necessarily reflect TI's views; see TI's Terms of Use.  
11.4 Trademarks  
TI E2Eis a trademark of Texas Instruments.  
All trademarks are the property of their respective owners.  
11.5 Electrostatic Discharge Caution  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled  
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may  
be more susceptible to damage because very small parametric changes could cause the device not to meet its published  
specifications.  
11.6 Glossary  
TI Glossary  
This glossary lists and explains terms, acronyms, and definitions.  
12 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
Copyright © 2021 Texas Instruments Incorporated  
28  
Submit Document Feedback  
Product Folder Links: INA186  
 
 
 
 
 
 
 
 
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
PACKAGE OUTLINE  
YFD0006-C02  
DSBGA - 0.4 mm max height  
SCALE 14.000  
DIE SIZE BALL GRID ARRAY  
A
1.20  
1.14  
B
BALL A1  
CORNER  
0.80  
0.73  
0.4 MAX  
C
SEATING PLANE  
0.175  
0.125  
BALL TYP  
0.8 TYP  
B
A
SYMM  
0.4  
TYP  
0.285  
0.185  
6X  
3
1
2
SYMM  
0.015  
C A B  
0.4  
TYP  
4224626/B 02/2019  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
www.ti.com  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
29  
Product Folder Links: INA186  
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
EXAMPLE BOARD LAYOUT  
YFD0006-C02  
DSBGA - 0.4 mm max height  
DIE SIZE BALL GRID ARRAY  
(0.4) TYP  
6X ( 0.225)  
1
2
A
(0.4) TYP  
B
SYMM  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:50X  
0.05 MAX  
0.05 MIN  
(
0.225)  
METAL  
(
0.225)  
SOLDER MASK  
OPENING  
EXPOSED  
METAL  
EXPOSED  
METAL  
METAL UNDER  
SOLDER MASK  
SOLDER MASK  
OPENING  
NON-SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
NOT TO SCALE  
4224626/B 02/2019  
NOTES: (continued)  
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.  
Refer to Texas Instruments Literature No. SNVA009 (www.ti.com/lit/snva009).  
www.ti.com  
Copyright © 2021 Texas Instruments Incorporated  
30  
Submit Document Feedback  
Product Folder Links: INA186  
INA186  
www.ti.com  
SBOS318B – APRIL 2019 – REVISED JULY 2021  
EXAMPLE STENCIL DESIGN  
YFD0006-C02  
DSBGA - 0.4 mm max height  
DIE SIZE BALL GRID ARRAY  
(0.4) TYP  
(R0.05) TYP  
6X ( 0.25)  
1
3
2
A
B
SYMM  
(0.4) TYP  
METAL  
TYP  
SOLDER PASTE EXAMPLE  
BASED ON 0.1 mm THICK STENCIL  
SCALE:50X  
4224626/B 02/2019  
NOTES: (continued)  
www.ti.com  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
31  
Product Folder Links: INA186  
PACKAGE OPTION ADDENDUM  
www.ti.com  
12-Aug-2021  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
INA186A1IDCKR  
INA186A1IDCKT  
INA186A1IDDFR  
INA186A1IDDFT  
INA186A1IYFDR  
INA186A2IDCKR  
INA186A2IDCKT  
INA186A2IDDFR  
INA186A2IDDFT  
INA186A2IYFDR  
INA186A3IDCKR  
INA186A3IDCKT  
INA186A3IDDFR  
INA186A3IDDFT  
INA186A3IYFDR  
INA186A4IDCKR  
INA186A4IDCKT  
INA186A4IDDFR  
INA186A4IDDFT  
INA186A4IYFDR  
ACTIVE  
ACTIVE  
SC70  
SC70  
DCK  
DCK  
DDF  
DDF  
YFD  
DCK  
DCK  
DDF  
DDF  
YFD  
DCK  
DCK  
DDF  
DDF  
YFD  
DCK  
DCK  
DDF  
DDF  
YFD  
6
6
8
8
6
6
6
8
8
6
6
6
8
8
6
6
6
8
8
6
3000 RoHS & Green  
250 RoHS & Green  
3000 RoHS & Green  
250 RoHS & Green  
NIPDAU  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
1E7  
NIPDAU  
NIPDAU  
NIPDAU  
SNAGCU  
NIPDAU  
NIPDAU  
NIPDAU  
NIPDAU  
SNAGCU  
NIPDAU  
NIPDAU  
NIPDAU  
NIPDAU  
SNAGCU  
NIPDAU  
NIPDAU  
NIPDAU  
NIPDAU  
SNAGCU  
1E7  
ACTIVE SOT-23-THIN  
ACTIVE SOT-23-THIN  
1ZLW  
1ZLW  
1IJ  
ACTIVE  
ACTIVE  
ACTIVE  
DSBGA  
SC70  
3000 RoHS & Green  
3000 RoHS & Green  
1E8  
SC70  
250  
3000 RoHS & Green  
250 RoHS & Green  
RoHS & Green  
1E8  
ACTIVE SOT-23-THIN  
ACTIVE SOT-23-THIN  
1ZMW  
1ZMW  
1IK  
ACTIVE  
ACTIVE  
ACTIVE  
DSBGA  
SC70  
3000 RoHS & Green  
3000 RoHS & Green  
1E9  
SC70  
250  
3000 RoHS & Green  
250 RoHS & Green  
RoHS & Green  
1E9  
ACTIVE SOT-23-THIN  
ACTIVE SOT-23-THIN  
1ZNW  
1ZNW  
1IL  
ACTIVE  
ACTIVE  
ACTIVE  
DSBGA  
SC70  
3000 RoHS & Green  
3000 RoHS & Green  
1EA  
SC70  
250  
3000 RoHS & Green  
250 RoHS & Green  
3000 RoHS & Green  
RoHS & Green  
1EA  
ACTIVE SOT-23-THIN  
ACTIVE SOT-23-THIN  
1ZOW  
1ZOW  
1IM  
ACTIVE  
DSBGA  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
12-Aug-2021  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
INA186A5IDCKR  
INA186A5IDCKT  
INA186A5IDDFR  
INA186A5IDDFT  
INA186A5IYFDR  
ACTIVE  
ACTIVE  
SC70  
SC70  
DCK  
DCK  
DDF  
DDF  
YFD  
6
6
8
8
6
3000 RoHS & Green  
250 RoHS & Green  
3000 RoHS & Green  
250 RoHS & Green  
3000 RoHS & Green  
NIPDAU  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
1EB  
NIPDAU  
NIPDAU  
NIPDAU  
SNAGCU  
1EB  
ACTIVE SOT-23-THIN  
ACTIVE SOT-23-THIN  
1ZPW  
1ZPW  
1IN  
ACTIVE  
DSBGA  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
Addendum-Page 2  
PACKAGE OPTION ADDENDUM  
www.ti.com  
12-Aug-2021  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF INA186 :  
Automotive : INA186-Q1  
NOTE: Qualified Version Definitions:  
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects  
Addendum-Page 3  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
13-Aug-2021  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
INA186A1IDCKR  
INA186A1IDCKT  
INA186A1IDDFR  
SC70  
SC70  
DCK  
DCK  
DDF  
6
6
8
3000  
250  
178.0  
178.0  
180.0  
9.0  
9.0  
8.4  
2.4  
2.4  
3.2  
2.5  
2.5  
3.2  
1.2  
1.2  
1.4  
4.0  
4.0  
4.0  
8.0  
8.0  
8.0  
Q3  
Q3  
Q3  
SOT-  
3000  
23-THIN  
INA186A1IYFDR  
INA186A2IDCKR  
INA186A2IDCKT  
INA186A2IDDFR  
DSBGA  
SC70  
YFD  
DCK  
DCK  
DDF  
6
6
6
8
3000  
3000  
250  
178.0  
178.0  
178.0  
180.0  
8.4  
9.0  
9.0  
8.4  
0.84  
2.4  
2.4  
3.2  
1.27  
2.5  
2.5  
3.2  
0.46  
1.2  
1.2  
1.4  
4.0  
4.0  
4.0  
4.0  
8.0  
8.0  
8.0  
8.0  
Q2  
Q3  
Q3  
Q3  
SC70  
SOT-  
3000  
23-THIN  
INA186A2IDDFT  
SOT-  
DDF  
8
250  
180.0  
8.4  
3.2  
3.2  
1.4  
4.0  
8.0  
Q3  
23-THIN  
INA186A2IYFDR  
INA186A3IDCKR  
INA186A3IDCKT  
INA186A3IDDFR  
DSBGA  
SC70  
YFD  
DCK  
DCK  
DDF  
6
6
6
8
3000  
3000  
250  
178.0  
178.0  
178.0  
180.0  
8.4  
9.0  
9.0  
8.4  
0.84  
2.4  
2.4  
3.2  
1.27  
2.5  
2.5  
3.2  
0.46  
1.2  
1.2  
1.4  
4.0  
4.0  
4.0  
4.0  
8.0  
8.0  
8.0  
8.0  
Q2  
Q3  
Q3  
Q3  
SC70  
SOT-  
3000  
23-THIN  
INA186A3IDDFT  
INA186A3IYFDR  
SOT-  
23-THIN  
DDF  
YFD  
8
6
250  
180.0  
178.0  
8.4  
8.4  
3.2  
3.2  
1.4  
4.0  
4.0  
8.0  
8.0  
Q3  
Q2  
DSBGA  
3000  
0.84  
1.27  
0.46  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
13-Aug-2021  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
INA186A4IDCKR  
INA186A4IDCKT  
INA186A4IDDFR  
SC70  
SC70  
DCK  
DCK  
DDF  
6
6
8
3000  
250  
178.0  
178.0  
180.0  
9.0  
9.0  
8.4  
2.4  
2.4  
3.2  
2.5  
2.5  
3.2  
1.2  
1.2  
1.4  
4.0  
4.0  
4.0  
8.0  
8.0  
8.0  
Q3  
Q3  
Q3  
SOT-  
3000  
23-THIN  
INA186A4IYFDR  
INA186A5IDCKR  
INA186A5IDCKT  
INA186A5IDDFR  
DSBGA  
SC70  
YFD  
DCK  
DCK  
DDF  
6
6
6
8
3000  
3000  
250  
178.0  
178.0  
178.0  
180.0  
8.4  
9.0  
9.0  
8.4  
0.84  
2.4  
2.4  
3.2  
1.27  
2.5  
2.5  
3.2  
0.46  
1.2  
1.2  
1.4  
4.0  
4.0  
4.0  
4.0  
8.0  
8.0  
8.0  
8.0  
Q2  
Q3  
Q3  
Q3  
SC70  
SOT-  
3000  
23-THIN  
INA186A5IDDFT  
INA186A5IYFDR  
SOT-  
23-THIN  
DDF  
YFD  
8
6
250  
180.0  
178.0  
8.4  
8.4  
3.2  
3.2  
1.4  
4.0  
4.0  
8.0  
8.0  
Q3  
Q2  
DSBGA  
3000  
0.84  
1.27  
0.46  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
INA186A1IDCKR  
INA186A1IDCKT  
INA186A1IDDFR  
INA186A1IYFDR  
INA186A2IDCKR  
INA186A2IDCKT  
SC70  
SC70  
DCK  
DCK  
DDF  
YFD  
DCK  
DCK  
6
6
8
6
6
6
3000  
250  
180.0  
180.0  
210.0  
220.0  
180.0  
180.0  
180.0  
180.0  
185.0  
220.0  
180.0  
180.0  
18.0  
18.0  
35.0  
35.0  
18.0  
18.0  
SOT-23-THIN  
DSBGA  
SC70  
3000  
3000  
3000  
250  
SC70  
Pack Materials-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
13-Aug-2021  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
INA186A2IDDFR  
INA186A2IDDFT  
INA186A2IYFDR  
INA186A3IDCKR  
INA186A3IDCKT  
INA186A3IDDFR  
INA186A3IDDFT  
INA186A3IYFDR  
INA186A4IDCKR  
INA186A4IDCKT  
INA186A4IDDFR  
INA186A4IYFDR  
INA186A5IDCKR  
INA186A5IDCKT  
INA186A5IDDFR  
INA186A5IDDFT  
INA186A5IYFDR  
SOT-23-THIN  
SOT-23-THIN  
DSBGA  
DDF  
DDF  
YFD  
DCK  
DCK  
DDF  
DDF  
YFD  
DCK  
DCK  
DDF  
YFD  
DCK  
DCK  
DDF  
DDF  
YFD  
8
8
6
6
6
8
8
6
6
6
8
6
6
6
8
8
6
3000  
250  
210.0  
210.0  
220.0  
180.0  
180.0  
210.0  
210.0  
220.0  
180.0  
180.0  
210.0  
220.0  
180.0  
180.0  
210.0  
210.0  
220.0  
185.0  
185.0  
220.0  
180.0  
180.0  
185.0  
185.0  
220.0  
180.0  
180.0  
185.0  
220.0  
180.0  
180.0  
185.0  
185.0  
220.0  
35.0  
35.0  
35.0  
18.0  
18.0  
35.0  
35.0  
35.0  
18.0  
18.0  
35.0  
35.0  
18.0  
18.0  
35.0  
35.0  
35.0  
3000  
3000  
250  
SC70  
SC70  
SOT-23-THIN  
SOT-23-THIN  
DSBGA  
3000  
250  
3000  
3000  
250  
SC70  
SC70  
SOT-23-THIN  
DSBGA  
3000  
3000  
3000  
250  
SC70  
SC70  
SOT-23-THIN  
SOT-23-THIN  
DSBGA  
3000  
250  
3000  
Pack Materials-Page 3  
PACKAGE OUTLINE  
DDF0008A  
SOT-23 - 1.1 mm max height  
S
C
A
L
E
4
.
0
0
0
PLASTIC SMALL OUTLINE  
C
2.95  
2.65  
SEATING PLANE  
TYP  
PIN 1 ID  
AREA  
0.1 C  
A
6X 0.65  
8
1
2.95  
2.85  
NOTE 3  
2X  
1.95  
4
5
0.4  
0.2  
8X  
0.1  
C A  
B
1.65  
1.55  
B
1.1 MAX  
0.20  
0.08  
TYP  
SEE DETAIL A  
0.25  
GAGE PLANE  
0.1  
0.0  
0 - 8  
0.6  
0.3  
DETAIL A  
TYPICAL  
4222047/B 11/2015  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed 0.15 mm per side.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DDF0008A  
SOT-23 - 1.1 mm max height  
PLASTIC SMALL OUTLINE  
8X (1.05)  
SYMM  
1
8
8X (0.45)  
SYMM  
6X (0.65)  
5
4
(R0.05)  
TYP  
(2.6)  
LAND PATTERN EXAMPLE  
SCALE:15X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
SOLDER MASK  
DEFINED  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
4222047/B 11/2015  
NOTES: (continued)  
4. Publication IPC-7351 may have alternate designs.  
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DDF0008A  
SOT-23 - 1.1 mm max height  
PLASTIC SMALL OUTLINE  
8X (1.05)  
SYMM  
(R0.05) TYP  
8
1
8X (0.45)  
SYMM  
6X (0.65)  
5
4
(2.6)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
SCALE:15X  
4222047/B 11/2015  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
7. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
PACKAGE OUTLINE  
YFD0006  
DSBGA - 0.4 mm max height  
SCALE 14.000  
DIE SIZE BALL GRID ARRAY  
A
B
E
BALL A1  
CORNER  
D
0.4 MAX  
C
SEATING PLANE  
0.05 C  
0.175  
0.125  
SYMM  
C
B
A
0.8  
TYP  
SYMM  
0.4  
TYP  
1
2
0.25  
0.15  
6X  
0.015  
C A B  
0.4  
TYP  
4219510/A 11/2019  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
YFD0006  
DSBGA - 0.4 mm max height  
DIE SIZE BALL GRID ARRAY  
(0.4) TYP  
6X ( 0.225)  
1
2
A
(0.4) TYP  
SYMM  
B
C
SYMM  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:40X  
0.05 MAX  
0.05 MIN  
(
0.225)  
METAL  
METAL UNDER  
SOLDER MASK  
EXPOSED  
METAL  
EXPOSED  
METAL  
(
0.225)  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
NON-SOLDER MASK  
SOLDER MASK  
DEFINED  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
NOT TO SCALE  
4219510/A 11/2019  
NOTES: (continued)  
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.  
Refer to Texas Instruments Literature No. SNVA009 (www.ti.com/lit/snva009).  
www.ti.com  
EXAMPLE STENCIL DESIGN  
YFD0006  
DSBGA - 0.4 mm max height  
DIE SIZE BALL GRID ARRAY  
(0.4) TYP  
(R0.05) TYP  
6X ( 0.25)  
2
1
A
B
(0.4)  
TYP  
SYMM  
METAL  
TYP  
C
SYMM  
SOLDER PASTE EXAMPLE  
BASED ON 0.1 mm THICK STENCIL  
SCALE:40X  
4219510/A 11/2019  
NOTES: (continued)  
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.  
www.ti.com  
IMPORTANT NOTICE AND DISCLAIMER  
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE  
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”  
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY  
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD  
PARTY INTELLECTUAL PROPERTY RIGHTS.  
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate  
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable  
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you  
permission to use these resources only for development of an application that uses the TI products described in the resource. Other  
reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third party  
intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims, damages,  
costs, losses, and liabilities arising out of your use of these resources.  
TI’s products are provided subject to TI’s Terms of Sale (https:www.ti.com/legal/termsofsale.html) or other applicable terms available either  
on ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s  
applicable warranties or warranty disclaimers for TI products.IMPORTANT NOTICE  
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2021, Texas Instruments Incorporated  

相关型号:

SI9130DB

5- and 3.3-V Step-Down Synchronous Converters

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1-E3

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135_11

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9136_11

Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130CG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130LG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130_11

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137DB

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137LG

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9122E

500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY