INA190A1NDDFREP [TI]
具有皮安级 IB 和 EN 引脚的增强型产品 40V、双向、超精密电流检测放大器 | DDF | 8 | -55 to 150;
| 型号： | INA190A1NDDFREP |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有皮安级 IB 和 EN 引脚的增强型产品 40V、双向、超精密电流检测放大器 | DDF | 8 | -55 to 150 放大器 |
| 文件： | 总35页 (文件大小：2006K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INA190-EP
ZHCSNH7 –MAY 2022
INA190-EP 具有使能引脚的双向、低功耗、零漂移、宽动态范围精密电流检测
放大器
1 特性
3 说明
• 支持国防、航天和医疗应用：
INA190-EP 是一款低功耗电压输出电流分流监控器
（也被称为电流检测放大器）。此器件常用于过流保
护、针对系统优化的精密电流测量或闭环反馈电路。
INA190-EP 可在独立于电源电压的 –0.2V 至 +40V 共
模电压下感测分流器上的压降。
– 温度范围：-55°C 至+150°C，TA
– 受控基线
– 一个组装/测试场所
– 一个制造场所
– 延长的产品生命周期
– 延长的产品变更通知
– 产品可追溯性
该器件的低输入偏置电流允许使用较大的电流检测电阻
器，从而能够提供微安级的精确电流测量。零漂移架构
的低失调电压扩展了电流测量的动态范围。此功能可支
持较小的检测电阻器在具有较低功率损耗的同时，仍提
供精确的电流测量。
• 低输入偏置电流：500 pA（典型值）
（支持微安级电流测量）
• 低功耗：
INA190-EP 由 1.7V 至 5.5V 单电源供电，在启用时消
耗的最大电源电流为 65 µA，而在禁用时仅为 0.1
µA。提供了五种固定增益选项：25V/V、50V/V、
100V/V、200V/V 或 500V/V。该器件的额定工作温度
范围为–55°C 至+150°C，并且采用SOT-23 封装。
– 低电源电压VS：1.7V 至5.5V
– 低静态电流：25°C 时为50 μA（典型值）
• 精度：
– 共模抑制比：132 dB（最小值）
– 增益误差：±0.2%（A1 器件）
– 增益漂移：7 ppm/°C（最大值）
– 失调电压VOS：±15 μV（最大值）
– 失调漂移： 80 nV/°C（最大值）
• 宽共模电压：–0.2V 至+40V
• 双向电流检测功能
器件信息(1)
封装尺寸（标称值）
器件型号
INA190-EP
封装
SOT-23 (8)
1.60mm × 2.90mm
(1) 如需了解所有可用封装，请参阅数据表末尾的封装选项附录。
• 增益选项：
– INA190A1-EP：25 V/V
– INA190A2-EP：50 V/V
– INA190A3-EP：100 V/V
– INA190A4-EP：200 V/V
– INA190A5-EP：500V/V
2 应用
• 航电设备
• 雷达系统
• 加固型通信
• 智能弹药
• 热成像
Supply Voltage
1.7 V to 5.5 V
RSENSE
Bus Voltage
–0.2 V to +40 V
LOAD
0.1 μF
0.5 nA
(typ)
0.5 nA
(typ)
ENABLE
VS
IN–
IN+
OUT
ADC
Microcontroller
INA190-EP
REF
GND
典型应用
本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问
www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SBOSA74
INA190-EP
ZHCSNH7 –MAY 2022
www.ti.com.cn
Table of Contents
8 Application and Implementation..................................20
8.1 Application Information............................................. 20
8.2 Typical Applications.................................................. 26
9 Power Supply Recommendations................................27
10 Layout...........................................................................28
10.1 Layout Guidelines................................................... 28
10.2 Layout Examples.................................................... 28
11 Device and Documentation Support..........................29
11.1 Documentation Support.......................................... 29
11.2 接收文档更新通知................................................... 29
11.3 支持资源..................................................................29
11.4 Trademarks............................................................. 29
11.5 Electrostatic Discharge Caution..............................29
11.6 术语表..................................................................... 29
12 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................4
6.5 Electrical Characteristics.............................................5
6.6 Typical Characteristics................................................7
7 Detailed Description......................................................13
7.1 Overview...................................................................13
7.2 Functional Block Diagram.........................................13
7.3 Feature Description...................................................14
7.4 Device Functional Modes..........................................16
Information.................................................................... 29
4 Revision History
DATE
REVISION
NOTES
May 2022
*
Initial release.
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5 Pin Configuration and Functions
VS
ENABLE
REF
1
2
3
4
8
7
6
5
INœ
IN+
NC
GND
OUT
Not to scale
图5-1. DDF Package 8-Pin Thin SOT-23 (Top View)
表5-1. Pin Functions
PIN
TYPE
DESCRIPTION
NAME
NO.
Enable pin. When this pin is driven to VS, the device is on and functions as a
current-sense amplifier. When this pin is driven to GND, the device is off, the
supply current is reduced, and the output is placed in a high-impedance state. This
pin must be driven externally, or connected to VS if not used.
ENABLE
2
Digital input
GND
4
8
Analog
Ground
Current-sense amplifier negative input. For high-side applications, connect the to
load side of the sense resistor. For low-side applications, connect to the ground
side of the sense resistor.
Analog input
IN–
Current-sense amplifier positive input. For high-side applications, connect to the
bus voltage side of the sense resistor. For low-side applications, connect to the
load side of the sense resistor.
IN+
NC
7
6
5
Analog input
Not internally connected. Either float these pins or connect to any voltage between
GND and VS.
—
OUT pin. This pin provides an analog voltage output that is the gained-up voltage
difference from the IN+ to the IN–pins, and is offset by the voltage applied to the
REF pin.
OUT
Analog output
Reference input. Enables bidirectional current sensing with an externally applied
voltage.
REF
VS
3
1
Analog input
Analog
Power supply, 1.7 V to 5.5 V
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
VS
Supply voltage
Analog inputs
6
V
(2)
42
Differential (VIN+) –(VIN–
)
–42
GND –0.3
GND –0.3
GND –0.3
VIN+
VIN–
,
V
VIN+, VIN–, with respect to GND(3)
42
VENABLE ENABLE
REF, OUT(3)
6
(VS) + 0.3
5
V
V
Input current into any pin(3)
Operating temperature
Junction temperature
Storage temperature
mA
°C
°C
°C
TA
150
–55
–65
TJ
150
Tstg
150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) VIN+ and VIN– are the voltages at the IN+ and IN–pins, respectively.
(3) Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5 mA.
6.2 ESD Ratings
VALUE
±3000
±1000
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
GND –0.2
GND –0.2
1.7
NOM
MAX
40
UNIT
V
VCM
Common-mode input range
VIN+, VIN– Input pin voltage range
40
V
VS
Operating supply voltage
5.5
VS
V
VREF
TA
Reference pin voltage range
Operating free-air temperature
GND
V
150
°C
–55
6.4 Thermal Information
INA190EP
DDF (SOT23)
8 PINS
164.6
THERMAL METRIC(1)
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
86.6
84.3
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
7.1
ΨJT
83.8
ΨJB
RθJC(bot)
N/A
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
at TA = 25°C, VSENSE = VIN+ –VIN–, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, and VENABLE = VS (unless otherwise
noted)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
Common-mode
rejection ratio
CMRR
132
150
dB
µV
VSENSE = 0 mV, VIN+ = –0.1 V to 40 V, TA = –55°C to +150°C
VOS
Offset voltage, RTI(1)
Offset drift, RTI
VS = 1.8 V, VSENSE = 0 mV
±15
–3
dVOS/dT
±10
±80 nV/°C
VSENSE = 0 mV, TA = –55°C to +150°C
Power-supply rejection
ratio, RTI
PSRR
±7
µV/V
VSENSE = 0 mV, VS = 1.7 V to 5.5 V, TA = –55°C to +150°C
–1
IIB
Input bias current
Input bias current
Input offset current
Input offset current
VSENSE = 0 mV
±0.5
±3
±20
±3
nA
nA
nA
nA
IIB
VSENSE = 0 mV, TA = –55°C to +150°C
VSENSE = 0 mV
IIO
±0.07
IIO
±20
VSENSE = 0 mV, TA = –55°C to +150°C
OUTPUT
A1 devices
A2 devices
A3 devices
A4 devices
A5 devices
A1 devices
25
50
G
Gain
100
V/V
200
500
±0.2%
±0.3%
–0.04%
A2, A3, A4
EG
Gain error
VOUT = 0.1 V to VS –0.1 V
–0.06%
devices
A5 devices
±0.4%
–0.08%
Gain error drift
2
±0.0025%
±2
7
±0.025%
±10
ppm/°C
TA = –55°C to +150°C
VOUT = 0.1 V to VS –0.1 V
A1 devices
Nonlinearity error(2)
A2 devices
±1
±6
Reference voltage
rejection ratio
VREF = 100 mV to VS –100 mV,
TA = –55°C to +150°C
RVRR
µV/V
nF
A3 devices
±0.5
±4
A4, A5
devices
±0.25
1
±3
Maximum capacitive
load
No sustained oscillation
VOLTAGE OUTPUT
Swing to VS power-
supply rail
VSP
VSN
mV
mV
VS = 1.8 V, RL = 10 kΩ to GND, TA = –55°C to +150°C
(VS) –20
(VGND) + 0.05
(VGND) + 1
(VS) –40
(VGND) + 1
(VGND) + 3
VS = 1.8 V, RL = 10 kΩ to GND, TA = –55°C to +150°C,
VSENSE = –10 mV, VREF = 0 V
Swing to GND
A1, A2, A3
devices
VS = 1.8 V, RL = 10 kΩ to GND,
TA = –55°C to +150°C, VSENSE = 0 mV,
VREF = 0 V
Zero current output
voltage
VZL
mV
A4 devices
A5 devices
(VGND) + 2
(VGND) + 3
(VGND) + 4
(VGND) + 9
FREQUENCY RESPONSE
A1 devices, CLOAD = 10 pF
20
18
16
14
9
45
37
35
33
27
0.3
30
87
78
73
64
44
1
A2 devices, CLOAD = 10 pF
BW
Bandwidth(2)
A3 devices, CLOAD = 10 pF
kHz
A4 devices, CLOAD = 10 pF
A5 devices, CLOAD = 10 pF
SR
tS
Slew rate(2)
VS = 5.0 V, VOUT = 0.5 V to 4.5 V
From current step to within 1% of final value
0.1
8
V/µs
µs
Settling time(2)
100
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at TA = 25°C, VSENSE = VIN+ –VIN–, VS = 1.8 V to 5.0 V, VIN+ = 12 V, VREF = VS / 2, and VENABLE = VS (unless otherwise
noted)
PARAMETER
CONDITIONS
MIN
TYP
75
1
MAX
UNIT
NOISE, RTI(1)
Voltage noise
density(2)
25
225
nV/√Hz
ENABLE
IEN
Leakage input current
100
6
nA
V
0 V ≤VENABLE ≤VS, TA = –55°C to +150°C
TA = –55°C to +150°C
High-level input
voltage
VIH
0.7 × VS
0
VIL
Low-level input voltage
Hysteresis
0.3 × VS
V
TA = –55°C to +150°C
VHYS
300
1
mV
Output leakage
disabled
VS = 5.0 V, VOUT = 0 V to 5.0 V, VENABLE = 0 V, TA = –55°C to
IODIS
5
µA
+150°C
POWER SUPPLY
VS = 1.8 V, VSENSE = 0 mV
48
10
65
90
IQ
Quiescent current
µA
nA
VS = 1.8 V, VSENSE = 0 mV, TA = –55°C to +150°C
VENABLE = 0 V, VSENSE = 0 mV
100
500
Quiescent current
disabled
IQDIS
VENABLE = 0 V, VSENSE = 0 mV, TA = –55°C to +150°C
(1) RTI = referred-to-input.
(2) Specification based on statistical simulation results or characterization, not tested in final production.
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6.6 Typical Characteristics
at TA = 25°C, VS = 1.8 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted)
15
10
5
0
-5
-10
-15
-75
-50
-25
0
25
50
75
100 125 150
Temperature (ꢀC)
Input Offset Voltage (mV)
.
D001
图6-2. Offset Voltage vs. Temperature
图6-1. Input Offset Voltage Production Distribution
0.1
0.08
0.06
0.04
0.02
0
-0.02
-0.04
-0.06
-0.08
-0.1
-75
-50
-25
0
25
50
75
100 125 150
Temperature (ꢀC)
D007
.
Common-Mode Rejection Ratio (mV/V)
图6-4. Common-Mode Rejection Ratio vs. Temperature
图6-3. Common-Mode Rejection Production Distribution
D013
D014
Gain Error (%)
Gain Error (%)
A2, A3, and A4 devices
A1 devices
图6-6. Gain Error Production Distribution
图6-5. Gain Error Production Distribution
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6.6 Typical Characteristics (continued)
at TA = 25°C, VS = 1.8 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted)
D017
Gain Error (%)
.
.
A5 devices
图6-8. Gain Error vs. Temperature
图6-7. Gain Error Production Distribution
60
50
40
30
20
10
0
140
120
100
80
60
A1
A2
A3
A4
A5
40
20
-10
-20
0
10
100
1k 10k
Frequency (Hz)
100k
1M
10
100
1k 10k
Frequency (Hz)
100k
1M
D020
D019
VS = 5 V
VS = 5 V
图6-9. Gain vs. Frequency
图6-10. Power-Supply Rejection Ratio vs. Frequency
2
160
140
120
100
80
-55ꢀC
1.8
25ꢀC
150ꢀC
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
60
40
10
100
1k 10k
Frequency (Hz)
100k
1M
0
1
2
3
4
5
6
7
8
9
10 11
D021
Output Current (mA)
A3 devices
VS = 1.8 V
图6-11. Common-Mode Rejection Ratio vs. Frequency
图6-12. Output Voltage Swing vs. Output Current
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6.6 Typical Characteristics (continued)
at TA = 25°C, VS = 1.8 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted)
6
5
4
3
0.25
0.2
-55ꢀC
25ꢀC
150ꢀC
0.15
0.1
0.05
0
-0.05
-0.1
-0.15
-0.2
-0.25
2
1
0
0
5
10
15
20
25
Common-Mode Voltage (V)
30
35
40
0
5
10
15
20
25
30
35
40
D024
Output Current (mA)
VS = 5.0 V
VS = 5.0 V
图6-14. Input Bias Current vs. Common-Mode Voltage
图6-13. Output Voltage Swing vs. Output Current
7
6
0.25
0.2
0.15
0.1
5
4
0.05
0
3
-0.05
-0.1
-0.15
-0.2
-0.25
2
1
0
-1
-75
0
5
10
15
20
25
Common-Mode Voltage (V)
30
35
40
-50
-25
0
25
50
75
100 125 150
D025
Temperature (ꢀC)
VENABLE = 0 V
.
图6-15. Input Bias Current vs. Common-Mode Voltage
图6-16. Input Bias Current vs. Temperature
(Shutdown)
80
250
225
VS = 1.8 V
VS = 3.3 V
VS = 5.5 V
VS = 1.8 V
VS = 3.3 V
VS = 5.5 V
75
70
65
60
55
50
45
40
35
200
175
150
125
100
75
50
25
0
-75
-50
-25
0
25
50
75
100 125 150
-75
-50
-25
0
25
50
75
100 125 150
Temperature (ꢀC)
Temperature (ꢀC)
.
VENABLE = 0 V
图6-17. Quiescent Current vs. Temperature (Enabled)
图6-18. Quiescent Current vs. Temperature (Disabled)
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6.6 Typical Characteristics (continued)
at TA = 25°C, VS = 1.8 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted)
100
70
65
60
55
50
45
40
VS = 1.8 V
VS = 5 V
80
70
60
50
40
30
20
10
10
-5
0
5
10
15
20
25
Common-Mode Voltage (V)
30
35
40
100
1k
Frequency (Hz)
10k
100k
D029
D030
VS = 5.0 V
A3 devices
图6-19. Quiescent Current vs. Common-Mode Voltage
图6-20. Input-Referred Voltage Noise vs. Frequency
Time (20 ms/div)
Time (1 s/div)
D032
D031
VS = 5.0 V, A3 devices
A3 devices
图6-22. Step Response (10-mVPP Input Step)
图6-21. 0.1-Hz to 10-Hz Voltage Noise (Referred-To-Input)
Inverting Input
Output
VCM
VOUT
0 V
Time (250 ms/div)
Time (250 ms/div)
D034
D033
A3 devices
A3 devices
图6-24. Inverting Differential Input Overload
图6-23. Common-Mode Voltage Transient Response
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6.6 Typical Characteristics (continued)
at TA = 25°C, VS = 1.8 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted)
Non-inverting Input
Output
Supply Voltage
Output Voltage
0 V
0 V
Time (250 ms/div)
Time (10 ms/div)
D035
D036
VS = 5.0 V, A3 devices
VS = 5.0 V, A3 devices
图6-25. Noninverting Differential Input Overload
图6-26. Start-Up Response
Enable
Output
Supply Voltage
Output Voltage
0 V
0 V
Time (250 ms/div)
Time (100 ms/div)
D038
D037
VS = 5.0 V, A3 devices
VS = 5.0 V, A3 devices
图6-28. Enable and Disable Response
图6-27. Brownout Recovery
100
25
IBP
IBN
IBP
IBN
80
60
15
5
40
20
0
-20
-40
-60
-80
-5
-15
-100
-25
-60
-110 -90 -70 -50 -30 -10 10 30 50 70 90 110
Differential Input Voltage (mV)
-40
-20
0
20
Differential Input Voltage (mV)
40
60
D039
D047
VS = 5.0 V, VREF = 2.5 V, A1 devices
VS = 5.0 V, VREF = 2.5 V, A2, A3, A4, A5 devices
图6-30. IB+ and IB–vs. Differential Input Voltage
图6-29. IB+ and IB–vs. Differential Input Voltage
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6.6 Typical Characteristics (continued)
at TA = 25°C, VS = 1.8 V, VIN+ = 12 V, VREF = VS / 2, VENABLE = VS, and for all gain options (unless otherwise noted)
1.5
1.25
1
2.5
2
-55ꢁC
25ꢁC
150ꢁC
-55ꢁC
25ꢁC
150ꢁC
1.5
1
0.75
0.5
0.5
0
0.25
0
-0.5
-1
-0.25
-0.5
-0.75
-1
-1.5
-2
-2.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Output Voltage (V)
Output Voltage (V)
VS = 5.0 V, VENABLE = 0 V, VREF = 2.5 V
VS = 5.0 V, VENABLE = 0 V, VREF = 2.5 V
图6-31. Output Leakage vs. Output Voltage (A1, A2, and A3
图6-32. Output Leakage vs. Output Voltage (A4 and A5 Devices)
Devices)
5000
A5
A4
A2
A3
1000
A1
100
10
1
Gain Variants
A1
A2
A3
A4
A5
0.1
10
100
1k
10k
Frequency (Hz)
100k
1M
10M
D050
VS = 5.0 V, VCM = 0 V
图6-33. Output Impedance vs. Frequency
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7 Detailed Description
7.1 Overview
The INA190-EP is a low bias current, low offset, 40-V common-mode, current-sensing amplifier with an enable
pin. The INA190-EP is a specially designed, current-sensing amplifier that accurately measures voltages
developed across current-sensing resistors on common-mode voltages that far exceed the supply voltage.
Current is measured on input voltage rails as high as 40 V at VIN+ and VIN–, with a supply voltage, VS, as low as
1.7 V. When disabled, the output goes to a high-impedance state, and the supply current draw is reduced to less
than 0.1 µA. The INA190-EP is intended for use in both low-side and high-side current-sensing configurations
where high accuracy and low current consumption are required.
7.2 Functional Block Diagram
ENABLE
VS
INA190-EP
IN+
œ
œ
+
OUT
REF
œ
+
+
INœ
GND
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7.3 Feature Description
7.3.1 Precision Current Measurement
The INA190-EP allows for accurate current measurements over a wide dynamic range. The high accuracy of the
device is attributable to the low gain error and offset specifications. The offset voltage of the INA190-EP is less
than 15 µV. In this case, the low offset improves the accuracy at light loads when VIN+ approaches VIN–. Another
advantage of low offset is the ability to use a lower-value shunt resistor that reduces the power loss in the
current-sense circuit, and improves the power efficiency of the end application.
The maximum gain error of the INA190-EP is specified between 0.2% and 0.4% of the actual value, depending
on the gain option. As the sensed voltage becomes much larger than the offset voltage, the gain error becomes
the dominant source of error in the current-sense measurement. When the device monitors currents near the
full-scale output range, the total measurement error approaches the value of the gain error.
7.3.2 Low Input Bias Current
The INA190-EP is different from many current-sense amplifiers because this device offers very low input bias
current. The low input bias current of the INA190-EP has three primary benefits.
The first benefit is the reduction of the current consumed by the device in both the enabled and disabled states.
Classical current-sense amplifier topologies typically consume tens of microamps of current at the inputs. For
these amplifiers, the input current is the result of the resistor network that sets the gain and additional current to
bias the input amplifier. To reduce the bias current to near zero, the INA190-EP uses a capacitively coupled
amplifier on the input stage, followed by a difference amplifier on the output stage.
The second benefit of low bias current is the ability to use input filters to reject high-frequency noise before the
signal is amplified. In a traditional current-sense amplifier, the addition of input filters comes at the cost of
reduced accuracy. However, as a result of the low bias currents, input filters have little effect on the
measurement accuracy of the INA190-EP.
The third benefit of low bias current is the ability to use a larger current-sense resistor. This ability allows the
device to accurately monitor currents as low as 1 µA.
7.3.3 Low Quiescent Current With Output Enable
The device features low quiescent current (IQ), while still providing sufficient small-signal bandwidth to be usable
in most applications. The quiescent current of the INA190-EP is only 48 µA (typ), while providing a small-signal
bandwidth of 35 kHz in a gain of 100. The low IQ and good bandwidth allow the device to be used in many
portable electronic systems without excessive drain on the battery. Because many applications only need to
periodically monitor current, the INA190-EP features an enable pin that turns off the device until needed. When
in the disabled state, the INA190-EP typically draws 10 nA of total supply current.
7.3.4 Bidirectional Current Monitoring
INA190-EP devices can sense current flow through a sense resistor in both directions. The bidirectional current-
sensing capability is achieved by applying a voltage at the REF pin to offset the output voltage. A positive
differential voltage sensed at the inputs results in an output voltage that is greater than the applied reference
voltage. Likewise, a negative differential voltage at the inputs results in output voltage that is less than the
applied reference voltage. Use 方程式1 to calculate the output voltage of the current-sense amplifier.
VOUT = ILOADì RSENSE ìGAIN + V
REF
(1)
where
• ILOAD is the load current to be monitored.
• RSENSE is the current-sense resistor.
• GAIN is the gain option of the selected device.
• VREF is the voltage applied to the REF pin.
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7.3.5 High-Side and Low-Side Current Sensing
The INA190-EP supports input common-mode voltages from –0.2 V to +40 V. Because of the internal topology,
the common-mode range is not restricted by the power-supply voltage (VS). The ability to operate with common-
mode voltages greater or less than VS allows the INA190-EP to be used in high-side and low-side current-
sensing applications (see 图7-1).
Bus Supply
up to +40 V
IN+
High-Side Sensing
RSENSE
Common-mode voltage (VCM
is bus-voltage dependent.
)
INœ
LOAD
IN+
Low-Side Sensing
Common-mode voltage (VCM
is always near ground and is
)
RSENSE
isolated from bus-voltage spikes.
INœ
图7-1. High-Side and Low-Side Sensing Connections
7.3.6 High Common-Mode Rejection
The INA190-EP uses a capacitively coupled amplifier on the front end. Therefore, DC common-mode voltages
are blocked from downstream circuits, resulting in very high common-mode rejection. Typically, the common-
mode rejection of the INA190-EP is approximately 150 dB. The ability to reject changes in the DC common-
mode voltage allows the INA190-EP to monitor both high- and low-voltage rail currents with very little change in
the offset voltage.
7.3.7 Rail-to-Rail Output Swing
The INA190-EP allows linear current-sensing operation with the output close to the supply rail and ground. The
maximum specified output swing to the positive rail is VS – 40 mV, and the maximum specified output swing to
GND is only GND + 1 mV. The close-to-rail output swing is useful to maximize the usable output range,
particularly when operating the device from a 1.8-V supply.
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7.4 Device Functional Modes
7.4.1 Normal Operation
The INA190-EP is in normal operation when the following conditions are met:
• The power-supply voltage (VS) is between 1.7 V and 5.5 V.
• The common-mode voltage (VCM) is within the specified range of –0.2 V to +40 V.
• The maximum differential input signal times the gain plus VREF is less than the positive swing voltage VSP
• The ENABLE pin is driven or connected to VS.
.
• The minimum differential input signal times the gain plus VREF is greater than the zero load swing to GND,
VZL (see the Rail-to-Rail Output Swing section).
During normal operation, this device produces an output voltage that is the amplified representation of the
difference voltage from IN+ to IN–plus the voltage applied to the REF pin.
7.4.2 Unidirectional Mode
This device can be configured to monitor current flowing in one direction (unidirectional) or in both directions
(bidirectional) depending on how the REF pin is connected. 图 7-2 shows the device operating in unidirectional
mode where the output is near ground when no current is flowing. When the current flows from the bus supply to
the load, the input voltage from IN+ to IN–increases and causes the output voltage at the OUT pin to increase.
Bus Voltage
up to 40 V
RSENSE
VS
CBYPASS
0.1 µF
Load
1.7 V to 5.5 V
ISENSE
VS
ENABLE
INA190-EP
IN–
Capacitively
Coupled
Amplifier
–
+
OUT
REF
VOUT
IN+
GND
图7-2. Typical Unidirectional Application
The linear range of the output stage is limited by how close the output voltage can approach ground under zero
input conditions. The zero current output voltage of the INA190-EP is very small and for most unidirectional
applications the REF pin is simply grounded. However, if the measured current multiplied by the current sense
resistor and device gain is less than the zero current output voltage, then bias the REF pin to a convenient value
above the zero current output voltage to get the output into the linear range of the device. To limit common-mode
rejection errors, buffer the reference voltage connected to the REF pin.
A less-frequently used output biasing method is to connect the REF pin to the power-supply voltage, VS. This
method results in the output voltage saturating at 40 mV less than the supply voltage when no differential input
voltage is present. This method is similar to the output saturated low condition with no differential input voltage
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when the REF pin is connected to ground. The output voltage in this configuration only responds to currents that
develop negative differential input voltage relative to the device IN– pin. Under these conditions, when the
negative differential input signal increases, the output voltage moves downward from the saturated supply
voltage. The voltage applied to the REF pin must not exceed VS.
Another use for the REF pin in unidirectional operation is to level shift the output voltage. 图 7-3 shows an
application where the device ground is set to a negative voltage so currents biased to negative supplies, as seen
in optical networking cards, can be measured. The GND of the INA190-EP can be set to negative voltages, as
long as the inputs do not violate the common-mode range specification and the voltage difference between VS
and GND does not exceed 5.5 V. In this example, the output of the INA190-EP is fed into a positive-biased ADC.
By grounding the REF pin, the voltages at the output will be positive and not damage the ADC. To make sure the
output voltage never goes negative, the supply sequencing must be the positive supply first, followed by the
negative supply.
+ 1.8 V
-3.3 V
CBYPASS
0.1 µF
RSENSE
Load
VS
ENABLE
INA190-EP
IN-
Capacitively
Coupled
Amplifier
–
+
OUT
REF
ADC
IN+
GND
- 3.3 V
图7-3. Using the REF Pin to Level-Shift Output Voltage
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7.4.3 Bidirectional Mode
The INA190-EP devices are bidirectional current-sense amplifiers capable of measuring currents through a
resistive shunt in two directions. This bidirectional monitoring is common in applications that include charging
and discharging operations where the current flowing through the resistor can change directions.
Bus Voltage
up to 40 V
RSENSE
VS
CBYPASS
0.1 µF
Load
1.7 V to 5.5 V
ISENSE
VS
ENABLE
INA190-EP
IN–
Reference
Voltage
Capacitively
Coupled
Amplifier
–
+
OUT
REF
VOUT
+
–
IN+
GND
图7-4. Bidirectional Application
The user can apply a voltage to the REF pin to measure this current flowing in both directions (see 图 7-4). The
voltage applied to REF (VREF) sets the output state that corresponds to the zero-input level state. The output
then responds by increasing above VREF for positive differential signals (relative to the IN–pin) and responds by
decreasing below VREF for negative differential signals. This reference voltage applied to the REF pin can be set
anywhere between 0 V to VS. For bidirectional applications, VREF is typically set at VS/2 for equal signal range in
both current directions. In some cases, VREF is set at a voltage other than VS/2; for example, when the
bidirectional current and corresponding output signal do not need to be symmetrical.
7.4.4 Input Differential Overload
If the differential input voltage (VIN+ – VIN–) times gain exceeds the voltage swing specification, the INA190-EP
drives its output as close as possible to the positive supply or ground, and does not provide accurate
measurement of the differential input voltage. If this input overload occurs during normal circuit operation, then
reduce the value of the shunt resistor or use a lower-gain version with the chosen sense resistor to avoid this
mode of operation. If a differential overload occurs in a time-limited fault event, then the output of the INA190-EP
returns to the expected value approximately 80 µs after the fault condition is removed.
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7.4.5 Shutdown
Specific package options of the INA190-EP feature an active-high ENABLE pin that shuts down the device when
pulled to ground. When the device is shut down, the quiescent current is reduced to 10 nA (typical), and the
output goes to a high-impedance state. In a battery-powered application, the low quiescent current extends the
battery lifetime when the current measurement is not needed. When the ENABLE pin is driven to the supply
voltage, the device turns back on. The typical output settling time when enabled is 130 µs.
The output of the INA190-EP goes to a high-impedance state when disabled. Therefore, you can connect
multiple outputs of the INA190-EP together to a single ADC or measurement device (see 图7-5).
When connected in this way, enable only one INA190-EP at a time, and make sure all devices have the same
supply voltage.
RSENSE
Bus Voltage1
upto to +40 V
Supply Voltage
1.7 V to 5.5 V
LOAD
0.1
F
GPIO1
ENABLE
VS
IN–
Microcontroller
ADC
OUT
INA190-EP
IN+
GPIO2
REF
GND
RSENSE
Bus Voltage2
upto to +40 V
Supply Voltage
1.7 V to 5.5 V
LOAD
0.1
F
ENABLE
VS
IN–
IN+
OUT
INA190-EP
REF
GND
图7-5. Multiplexing Multiple Devices With the ENABLE Pin
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8 Application and Implementation
备注
以下应用部分中的信息不属于TI 器件规格的范围，TI 不担保其准确性和完整性。TI 的客 户应负责确定
器件是否适用于其应用。客户应验证并测试其设计，以确保系统功能。
8.1 Application Information
The INA190-EP amplifies the voltage developed across a current-sensing resistor as current flows through the
resistor to the load or ground. The high common-mode rejection of the INA190-EP make it usable over a wide
range of voltage rails while still maintaining an accurate current measurement.
8.1.1 Basic Connections
图 8-1 shows the basic connections of the INA190-EP. Place the device as close as possible to the current
sense resistor and connect the input pins (IN+ and IN–) to the current sense resistor through kelvin
connections.If present, the ENABLE pin must be controlled externally or connected to VS if not used.
Supply Voltage
1.7 V to 5.5 V
RSENSE
Bus Voltage
–0.2 V to +40 V
LOAD
0.1 μF
0.5 nA
(typ)
0.5 nA
(typ)
ENABLE
VS
IN–
OUT
ADC
Microcontroller
INA190-EP
IN+
REF
GND
NOTE: To help eliminate ground offset errors between the device and the analog-to-digital converter (ADC), connect the REF pin to the
ADC reference input. When driving SAR ADCs, filter or buffer the output of the INA190-EP before connecting directly to the ADC.
图8-1. Basic Connections for the INA190-EP
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8.1.2 RSENSE and Device Gain Selection
The accuracy of any current-sense amplifier is maximized by choosing the current-sense resistor to be as large
as possible. A large sense resistor maximizes the differential input signal for a given amount of current flow and
reduces the error contribution of the offset voltage. However, there are practical limits as to how large the
current-sense resistor can be in a given application because of the resistor size and maximum allowable power
dissipation. 方程式 2 gives the maximum value for the current-sense resistor for a given power dissipation
budget:
PDMAX
RSENSE
<
2
IMAX
(2)
where:
• PDMAX is the maximum allowable power dissipation in RSENSE
• IMAX is the maximum current that will flow through RSENSE
.
.
An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply
voltage, VS, and device swing-to-rail limitations. In order to make sure that the current-sense signal is properly
passed to the output, both positive and negative output swing limitations must be examined. 方程式 3 provides
the maximum values of RSENSE and GAIN to keep the device from exceeding the positive swing limitation.
IMAX ìRSENSE ìGAIN < VSP - VREF
where:
(3)
• IMAX is the maximum current that will flow through RSENSE
• GAIN is the gain of the current-sense amplifier.
.
• VSP is the positive output swing as specified in the data sheet.
• VREF is the externally applied voltage on the REF pin.
To avoid positive output swing limitations when selecting the value of RSENSE, there is always a trade-off
between the value of the sense resistor and the gain of the device under consideration. If the sense resistor
selected for the maximum power dissipation is too large, then it is possible to select a lower-gain device in order
to avoid positive swing limitations.
The negative swing limitation places a limit on how small the sense resistor value can be for a given application.
方程式4 provides the limit on the minimum value of the sense resistor.
IMIN ìRSENSE ìGAIN > VSN - VREF
where:
(4)
• IMIN is the minimum current that will flow through RSENSE
• GAIN is the gain of the current-sense amplifier.
.
• VSN is the negative output swing of the device (see Rail-to-Rail Output Swing).
• VREF is the externally applied voltage on the REF pin.
In addition to adjusting RSENSE and the device gain, the voltage applied to the REF pin can be slightly increased
above GND to avoid negative swing limitations.
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8.1.3 Signal Conditioning
When performing accurate current measurements in noisy environments, the current-sensing signal is often
filtered. The INA190-EP features low input bias currents. Therefore, adding a differential mode filter to the input
without sacrificing the current-sense accuracy is possible. Filtering at the input is advantageous because this
action attenuates differential noise before the signal is amplified. 图 8-2 provides an example of how to use a
filter on the input pins of the device.
Bus Voltage
up to 40 V
VS
CBYPASS
0.1 µF
RSENSE
1.7 V to 5.5 V
Load
VS
Capacitively Coupled
Amplifier
ENABLE
INA190-EP
RF
IN–
1
CF
–
+
f3dB
ꢀ
OUT
REF
VOUT
RDIFF
4ꢁRFCF
RF
IN+
GND
图8-2. Filter at the Input Pins
图8-3 shows the value of RDIFF as a function of the device temperature.
6
A1
A2, A3, A4, A5
5
4
3
2
1
-75
-50
-25
0
25
50
75
100 125 150
Temperature (ꢀC)
图8-3. Differential Input Impedance vs. Temperature
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As the voltage drop across the sense resistor (VSENSE) increases, the amount of voltage dropped across the
input filter resistors (RF) also increases. The increased voltage drop results in additional gain error. Use 方程式 5
to calculate the error caused by these resistors.
≈
∆
«
’
RDIFF
Error(%) = 1-
ì100
∆
÷
÷
◊
RSENSE+ RDIFF + 2ìR
(
)
F
(5)
where:
• RDIFF is the differential input impedance.
• RF is the added value of the series filter resistance.
The input stage of the INA190-EP uses a capacitive feedback amplifier topology to achieve high dc precision. As
a result, periodic high-frequency shunt voltage (or current) transients of significant amplitude (10 mV or greater)
and duration (hundreds of nanoseconds or greater) may be amplified by the INA190-EP, even though the
transients are greater than the device bandwidth. Use a differential input filter in these applications to minimize
disturbances at the INA190-EP output.
The high input impedance and low bias current of the INA190-EP provide flexibility in the input filter design
without impacting the accuracy of current measurement. For example, set RF = 100 Ω and CF = 22 nF to achieve
a low-pass filter corner frequency of 36.2 kHz. These filter values significantly attenuate most unwanted high-
frequency signals at the input without severely impacting the current-sensing bandwidth or precision. If a lower
corner frequency is desired, increase the value of CF.
Filtering the input filters out differential noise across the sense resistor. If high-frequency, common-mode noise is
a concern, add an RC filter from the OUT pin to ground. The RC filter helps filter out both differential and
common-mode noise, as well as internally generated noise from the device. The value for the resistance of the
RC filter is limited by the impedance of the load. Any current drawn by the load manifests as an external voltage
drop from the INA190-EP OUT pin to the load input. To select the optimal values for the output filter, use 图 6-33
and see the Closed-Loop Analysis of Load-Induced Amplifier Stability Issues Using ZOUT application report
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8.1.4 Common-Mode Voltage Transients
With a small amount of additional circuitry, the INA190-EP can be used in circuits subject to transients that
exceed the absolute maximum voltage ratings. The most simple way to protect the inputs from negative
transients is to add resistors in series to the IN– and IN+ pins. Use resistors that are 1 kΩ or less, and limit the
current in the ESD structures to less than 5 mA. For example, using 1-kΩresistors in series with the INA190-EP
allows voltages as low as –5 V, while limiting the ESD current to less than 5 mA. If protection from high-voltage
or more-negative, common-voltage transients is needed, use the circuits shown in 图 8-4 and 图 8-5. When
implementing these circuits, use only Zener diodes or Zener-type transient absorbers (sometimes referred to as
transzorbs); any other type of transient absorber has an unacceptable time delay. Start by adding a pair of
resistors as a working impedance for the Zener diode (see 图 8-4). Keep these resistors as small as possible;
most often, use around 100 Ω. Larger values can be used with an effect on gain that is discussed in the Signal
Conditioning section. This circuit limits only short-term transients; therefore, many applications are satisfied with
a 100-Ω resistor along with conventional Zener diodes of the lowest acceptable power rating. This combination
uses the least amount of board space. These diodes can be found in packages as small as SOT-523 or
SOD-523.
Bus Voltage
up to 40 V
VS
CBYPASS
0.1 µF
RSENSE
1.7 V to 5.5 V
Load
VS
ENABLE
INA190-EP
RPROTECT
IN–
< 1 kꢀ
Capacitively
Coupled
Amplifier
–
+
OUT
REF
VOUT
RPROTECT
IN+
< 1 kꢀ
GND
图8-4. Transient Protection Using Dual Zener Diodes
In the event that low-power Zener diodes do not have sufficient transient absorption capability, a higher-power
transzorb must be used. The most package-efficient solution involves using a single transzorb and back-to-back
diodes between the device inputs (see 图 8-5). The most space-efficient solutions are dual, series-connected
diodes in a single SOT-523 or SOD-523 package. In either of the examples shown in 图 8-4 and 图 8-5, the total
board area required by the INA190-EP with all protective components is less than that of an SO-8 package, and
only slightly greater than that of an VSSOP-8 package.
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Bus Voltage
up to 40 V
VS
CBYPASS
0.1 µF
RSENSE
1.7 V to 5.5 V
Load
VS
ENABLE
INA190-EP
RPROTECT
IN–
< 1 kꢀ
Capacitively
Coupled
–
+
OUT
REF
Transorb
VOUT
Amplifier
RPROTECT
IN+
< 1 kꢀ
GND
图8-5. Transient Protection Using a Single Transzorb and Input Clamps
For more information, see the Current Shunt Monitor With Transient Robustness reference design.
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8.2 Typical Applications
The low input bias current of the INA190-EP allows accurate monitoring of small-value currents. To accurately
monitor currents in the microamp range, increase the value of the sense resistor to increase the sense voltage
so that the error introduced by the offset voltage is small. 图 8-6 shows the circuit configuration for monitoring
low-value currents. As a result of the differential input impedance of the INA190-EP, limit the value of RSENSE to
1 kΩor less for best accuracy.
RSENSE
kΩ
12 V
LOAD
5 V
VS
0.1
F
ENABLE
IN–
OUT
INA190-EP
IN+
REF
GND
图8-6. Microamp Current Measurement
8.2.1 Design Requirements
表8-1 lists the design requirements for the circuit shown in 图8-6.
表8-1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Power-supply voltage (VS)
5 V
12 V
Bus supply rail (VCM
)
Minimum sense current (IMIN
)
1 µA
Maximum sense current (IMAX
Device gain (GAIN)
)
150 µA
25 V/V
0 V
Reference voltage (VREF
)
Amplifier current in sleep or disabled state
< 1 µA
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8.2.2 Detailed Design Procedure
The maximum value of the current-sense resistor is calculated based choice of gain, value of the maximum
current the be sensed (IMAX), and the power supply voltage(VS). When operating at the maximum current, the
output voltage must not exceed the positive output swing specification, VSP. For the given design parameters, 方
程式6 determines that the maximum value for RSENSE is 1.321 kΩ.
VSP
RSENSE
<
IMAX ìGAIN
(6)
However, because this value exceeds the maximum recommended value for RSENSE, a resistance value of 1 kΩ
must be used. When operating at the minimum current value, IMIN the output voltage must be greater than the
swing to GND (VSN), specification. For this example, 方程式7 determines that the output voltage at the minimum
current is 25 mV, which is greater than the value for VSN
.
VOUTMIN = IMIN ìRSENSE ìGAIN
(7)
8.2.3 Application Curve
图 8-7 shows the output of the device when disabled and enabled while measuring a 40-µA load current. When
disabled, the current draw from the device supply and inputs is less than 106 nA.
Enable
Output
0 V
Time (250 ms/div)
D030
图8-7. Output Disable and Enable Response
9 Power Supply Recommendations
The input circuitry of the INA190-EP accurately measures beyond the power-supply voltage, VS. For example,
VS can be 5 V, whereas the bus supply voltage at IN+ and IN– can be as high as 40 V. However, the output
voltage range of the OUT pin is limited by the voltage on the VS pin. The INA190-EP also withstands the full
differential input signal range up to 40 V at the IN+ and IN– input pins, regardless of whether the device has
power applied at the VS pin. There is no sequencing requirement for VS and VIN+ or VIN–
.
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10 Layout
10.1 Layout Guidelines
• Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing
of the current-sensing resistor commonly results in additional resistance present between the input pins.
Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can
cause significant measurement errors.
• Place the power-supply bypass capacitor as close as possible to the device power supply and ground pins.
The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added
to compensate for noisy or high-impedance power supplies.
• When routing the connections from the current-sense resistor to the device, keep the trace lengths as short
as possible. The input filter capacitor CF should be placed as close as possible to the input pins of the device.
10.2 Layout Examples
图10-1. Recommended Layout for SC70 (DCK) Package
l in low
Note: RF and CF are optiona
noise/ripple environments
RF
CF
CBYPASS
Supply Voltage
(1.7 V to 5.5 V)
VS
1
2
3
4
8
7
6
5
IN-
RSHUNT
TI Device
IN+
ENABLE
Connect to VS
if not used
N.C.
OUT
REF
RF
IN+
GND
VIA to Ground Plane
Current Sense
Output
Connect REF to GND for
Unidirectional Measurement
or to External Reference for
Bidirectional Measurement
图10-2. Recommended Layout for SOT23-8 (DDF) Package
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• Texas Instruments, INA190EVM user's guide
• Texas Instruments, Closed-Loop Analysis of Load-Induced Amplifier Stability Issues Using ZOUT application
report
11.2 接收文档更新通知
要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册，即可每周接收产品信息更
改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
11.3 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅
TI 的《使用条款》。
11.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.6 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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28-Jun-2023
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
INA190A1NDDFREP
INA190A2NDDFREP
INA190A3NDDFREP
INA190A4NDDFREP
INA190A5NDDFREP
V62/21612-01XE
ACTIVE SOT-23-THIN
ACTIVE SOT-23-THIN
ACTIVE SOT-23-THIN
ACTIVE SOT-23-THIN
ACTIVE SOT-23-THIN
ACTIVE SOT-23-THIN
ACTIVE SOT-23-THIN
ACTIVE SOT-23-THIN
ACTIVE SOT-23-THIN
ACTIVE SOT-23-THIN
DDF
DDF
DDF
DDF
DDF
DDF
DDF
DDF
DDF
DDF
8
8
8
8
8
8
8
8
8
8
3000 RoHS & Green
3000 RoHS & Green
3000 RoHS & Green
3000 RoHS & Green
3000 RoHS & Green
3000 RoHS & Green
3000 RoHS & Green
3000 RoHS & Green
3000 RoHS & Green
3000 RoHS & Green
NIPDAU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
2LVF
2LXF
2M1F
2M3F
2M5F
2LVF
2LXF
2M1F
2M3F
2M5F
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
V62/21612-02XE
V62/21612-03XE
V62/21612-04XE
V62/21612-05XE
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
28-Jun-2023
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF INA190-EP :
Catalog : INA190
•
Automotive : INA190-Q1
•
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
•
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
•
Addendum-Page 2
PACKAGE OUTLINE
DDF0008A
SOT-23 - 1.1 mm max height
S
C
A
L
E
4
.
0
0
0
PLASTIC SMALL OUTLINE
C
2.95
2.65
SEATING PLANE
TYP
PIN 1 ID
AREA
0.1 C
A
6X 0.65
8
1
2.95
2.85
NOTE 3
2X
1.95
4
5
0.38
0.22
8X
0.1
C A B
1.65
1.55
B
1.1 MAX
0.20
0.08
TYP
SEE DETAIL A
0.25
GAGE PLANE
0.1
0.0
0 - 8
0.6
0.3
DETAIL A
TYPICAL
4222047/C 10/2022
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
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EXAMPLE BOARD LAYOUT
DDF0008A
SOT-23 - 1.1 mm max height
PLASTIC SMALL OUTLINE
8X (1.05)
SYMM
1
8
8X (0.45)
SYMM
6X (0.65)
5
4
(R0.05)
TYP
(2.6)
LAND PATTERN EXAMPLE
SCALE:15X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4222047/C 10/2022
NOTES: (continued)
4. Publication IPC-7351 may have alternate designs.
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
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EXAMPLE STENCIL DESIGN
DDF0008A
SOT-23 - 1.1 mm max height
PLASTIC SMALL OUTLINE
8X (1.05)
SYMM
(R0.05) TYP
8
1
8X (0.45)
SYMM
6X (0.65)
5
4
(2.6)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:15X
4222047/C 10/2022
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.
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