INA190A1QDCKRQ1 [TI]

符合 AEC-Q100 标准且具有皮安级输入偏置电流和 ENABLE 引脚的 40V 双向超精密电流检测放大器 | DCK | 6 | -40 to 125;


型号：	INA190A1QDCKRQ1
厂家：	TEXAS INSTRUMENTS
描述：	符合 AEC-Q100 标准且具有皮安级输入偏置电流和 ENABLE 引脚的 40V 双向超精密电流检测放大器 \| DCK \| 6 \| -40 to 125 放大器
文件：	总39页 (文件大小：1949K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

INA190-Q1

ZHCSJT2A –MAY 2019 –REVISED MARCH 2022

INA190-Q1 符合AEC-Q100 标准且具有皮安级IB 和使能引脚的40V、双向、超

精密电流感测放大器

1 特性

3 说明

• 符合面向汽车应用的AEC-Q100 标准：

– 温度等级1：–40°C 至+125°C，T_A

• 提供功能安全

INA190-Q1 是一款汽车类、低功耗电压输出电流分流

监控器（也被称为电流感测放大器）。此器件常用于监

控直接连接到汽车类12V 电池的系统。INA190-Q1 可

在独立于电源电压的 –0.2V 至 +40V 共模电压下感测

分流器上的压降。此外，输入引脚还具有 42V 的绝对

最大电压。

– 有助于进行功能安全系统设计的文档

• 低输入偏置电流：500 pA（典型值）

（支持微安级电流测量）

• 低功耗：

该器件的低输入偏置电流允许使用较大的电流感测电阻

器，从而能够提供微安级的精确电流测量。零漂移架构

的低失调电压扩展了电流测量的动态范围。此功能可支

持较小的感应电阻器在具有较低功率损耗的同时，仍提

供精确的电流测量。

– 低电源电压V_S：1.7V 至5.5V

– 低关断电流：100 nA（最大值）

– 低静态电流：25°C 时为50 μA（典型值）

• 精度：

– 共模抑制比：132 dB（最小值）

– 增益误差：±0.2%（A1 器件）

– 增益漂移：7 ppm/°C（最大值）

– 失调电压V_OS：±15 μV（最大值）

– 失调漂移： 80 nV/°C（最大值）

• 宽共模电压：–0.2V 至+40V，可承受高达42V 的

电压

INA190-Q1 由 1.7V 至 5.5V 单电源供电，在启用时消

耗的最大电源电流为 65 µA，而在禁用时仅为 0.1

µA。提供了五种固定增益选项：25V/V、50V/V、

100V/V、200V/V 或 500V/V。该器件的额定工作温度

范围为 –40°C 至 +125°C，并且采用 SC70 和

SOT-23 封装。

器件信息⁽¹⁾

• 双向电流感测功能

• 增益选项：

封装尺寸（标称值）

器件型号

INA190-Q1

封装

SC70 (6)

SOT-23 (8)

2.00mm x 1.25mm

1.60mm × 2.90mm

– INA190A1-Q1：25 V/V

– INA190A2-Q1：50V/V

– INA190A3-Q1：100V/V

– INA190A4-Q1：200V/V

– INA190A5-Q1：500V/V

(1) 如需了解所有可用封装，请参阅数据表末尾的封装选项附录。

2 应用

• 车身控制模块(BCM)

• 远程信息处理控制单元

• 紧急呼叫(eCall)

• 电池管理系统(BMS)

• 汽车音响主机

Supply Voltage

1.7 V to 5.5 V

R_SENSE

Bus Voltage

œ0.2 V to +40 V

LOAD

C_BYPASS

0.1 …F

0.5 nA

(typ)

0.5 nA

(typ)

ENABLE⁽¹⁾

INœ

OUT

ADC

Microcontroller

INA190-Q1

IN+

REF

GND

(1) The ENABLE pin is available

only in the DDF package.

典型应用

本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问

www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。

English Data Sheet: SBOS871

INA190-Q1

ZHCSJT2A –MAY 2019 –REVISED MARCH 2022

www.ti.com.cn

Table of Contents

8 Application and Implementation..................................20

8.1 Application Information............................................. 20

8.2 Typical Applications.................................................. 25

9 Power Supply Recommendations................................26

10 Layout...........................................................................27

10.1 Layout Guidelines................................................... 27

10.2 Layout Examples.................................................... 27

11 Device and Documentation Support..........................29

11.1 Documentation Support.......................................... 29

11.2 接收文档更新通知................................................... 29

11.3 支持资源..................................................................29

11.4 Trademarks............................................................. 29

11.5 Electrostatic Discharge Caution..............................29

11.6 术语表..................................................................... 29

12 Mechanical, Packaging, and Orderable

1 特性................................................................................... 1

2 应用................................................................................... 1

3 说明................................................................................... 1

4 Revision History.............................................................. 2

5 Pin Configuration and Functions...................................3

6 Specifications.................................................................. 4

6.1 Absolute Maximum Ratings........................................ 4

6.2 ESD Ratings............................................................... 4

6.3 Recommended Operating Conditions.........................4

6.4 Thermal Information....................................................4

6.5 Electrical Characteristics.............................................5

6.6 Typical Characteristics................................................7

7 Detailed Description......................................................13

7.1 Overview...................................................................13

7.2 Functional Block Diagram.........................................13

7.3 Feature Description...................................................14

7.4 Device Functional Modes..........................................16

Information.................................................................... 29

4 Revision History

Changes from Revision * (May 2019) to Revision A (March 2022)

Page

• 将数据表标题从“INA190-Q1 汽车类、40V、高精度、低偏置电流、低功耗电流感测放大器”更改为

“INA190-Q1 符合AEC-Q100 标准且具有皮安级IB 和使能引脚的40V、双向、超精密电流感测放大器”..... 1

• 更新了整个文档中的表格、图和交叉参考的编号格式.........................................................................................1

• 向特性部分添加了功能安全信息........................................................................................................................ 1

• 向特性部分添加了项目符号：低关断电流：100nA（最大值）..........................................................................1

• 向特性部分添加了项目符号：共模抑制比：132 dB（最小值）.........................................................................1

• 将特性中的最大增益漂移从5 ppm/°C 更改为7 ppm/°C，以便与电气特性表中的值相匹配.............................1

• 将特性中的最大温漂从0.13 µV/°C 更改为80 nV/°C，以便与电气特性表中的值相匹配.................................. 1

• 更改了应用部分..................................................................................................................................................1

• 添加了DDF 8 引脚SOT-23 封装........................................................................................................................1

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5 Pin Configuration and Functions

REF

GND

OUT

INœ

IN+

Not to scale

图5-1. DCK Package 6-Pin SC70 Top View

ENABLE

REF

INœ

IN+

GND

OUT

Not to scale

图5-2. DDF Package 8-Pin Thin SOT-23 Top View

表5-1. Pin Functions

TYPE

DESCRIPTION

NAME

DCK

DDF

Enable pin. When this pin is driven to V_S, the device is on and functions as a

current sense amplifier. When this pin is driven to GND, the device is off, the supply

ENABLE

Digital input current is reduced, and the output is placed in a high-impedance state. This pin

—

must be driven externally, or connected to vs. if not used. Available in DDF package

only.

GND

Analog

Ground

Current-sense amplifier negative input. For high-side applications, connect to load

Analog input side of sense resistor. For low-side applications, connect to ground side of sense

resistor.

IN–

Current-sense amplifier positive input. For high-side applications, connect to bus

Analog input voltage side of sense resistor. For low-side applications, connect to load side of

sense resistor.

IN+

Not internally connected. Either float these pins or connect to any voltage between

GND and VS.

—

OUT pin. This pin provides an analog voltage output that is the gained up voltage

OUT

Analog output

difference from the IN+ to the IN–pins, and is offset by the voltage applied to the

REF pin.

Reference input. Enables bidirectional current sensing with an externally applied

voltage.

REF

Analog input

Analog

Power supply, 1.7 V to 5.5 V

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

MIN

MAX

UNIT

V_S

Supply voltage

Analog inputs

(2)

Differential (V_IN+) –(V_IN–

)

–42

GND –0.3

V_IN+

V_IN–

V_IN+, V_IN–, with respect to GND⁽³⁾

V_ENABLEENABLE

REF, OUT⁽³⁾

(V_S) + 0.3

Input current into any pin⁽³⁾

Operating temperature

Junction temperature

Storage temperature

°C

T_A

150

–55

–65

T_J

150

T_stg

150

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2) V_IN+and V_IN–are the voltages at the IN+ and IN–pins, respectively.

(3) Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5 mA.

6.2 ESD Ratings

VALUE

±3000

±1000

UNIT

Human-body model (HBM), per AEC Q100-002⁽¹⁾HBM ESD Classification Level 2

Charged-device model (CDM), per AEC Q100-011 CDM ESD Classification Level C6

V_(ESD)Electrostatic discharge

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

GND –0.2

1.7

NOM

MAX

UNIT

V_CM

Common-mode input range

V_IN+, V_IN–Input pin voltage range

V_S

Operating supply voltage

5.5

V_S

V_REF

T_A

Reference pin voltage range

Operating free-air temperature

GND

125

°C

–40

6.4 Thermal Information

INA190-Q1

THERMAL METRIC⁽¹⁾

DCK (SC70)

6 PINS

170.7

132.7

65.3

DDF (SOT-23)

8 PINS

164.6

86.6

UNIT

R_qJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

R_qJC(top)

R_qJB

84.3

Y_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

45.7

7.1

Y_JB

65.2

83.8

R_qJC(bot)

N/A

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

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6.5 Electrical Characteristics

at T_A= 25°C, V_SENSE= V_IN+–V_IN–, V_S= 1.8 V to 5.0 V, V_IN+= 12 V, V_REF= V_S/ 2, and V_ENABLE= V_S(unless otherwise

noted)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

Common-mode

rejection ratio

CMRR

132

150

µV

V_SENSE= 0 mV, V_IN+= –0.1 V to 40 V, T_A= –40°C to +125°C

V_OS

Offset voltage, RTI⁽¹⁾

Offset drift, RTI

V_S= 1.8 V, V_SENSE= 0 mV

±15

–3

dV_OS/dT

80 nV/°C

V_SENSE= 0 mV, T_A= –40°C to +125°C

Power-supply rejection

ratio, RTI

PSRR

V_SENSE= 0 mV, V_S= 1.7 V to 5.5 V

±5

µV/V

–1

I_IB

Input bias current

Input offset current

V_SENSE= 0 mV

0.5

I_IO

±0.07

OUTPUT

A1 devices

A2 devices

A3 devices

A4 devices

A5 devices

A1 devices

Gain

100

V/V

200

500

±0.2%

±0.3%

–0.04%

A2, A3, A4

E_G

Gain error

V_OUT= 0.1 V to V_S–0.1 V

–0.06%

devices

A5 devices

±0.4%

–0.08%

Gain error drift

ppm/°C

T_A= –40°C to +125°C

V_OUT= 0.1 V to V_S–0.1 V

A1 devices

Nonlinearity error

±0.01%

±2

±10

±6

A2 devices

±1

Reference voltage

rejection ratio

V_REF= 100 mV to V_S–100 mV,

T_A= –40°C to +125°C

RVRR

µV/V

A3 devices

±0.5

±4

A4, A5

devices

±0.25

±3

Maximum capacitive

load

No sustained oscillation

VOLTAGE OUTPUT

Swing to V_Spower-

supply rail

V_SP

V_SN

V_S= 1.8 V, R_L= 10 kΩ to GND, T_A= –40°C to +125°C

(V_S) –20

(V_GND) + 0.05

(V_GND) + 1

(V_S) –40

(V_GND) + 1

(V_GND) + 3

V_S= 1.8 V, R_L= 10 kΩ to GND, T_A= –40°C to +125°C,

V_SENSE= –10 mV, V_REF= 0 V

Swing to GND

A1, A2, A3

V_S= 1.8 V, R_L= 10 kΩ to GND,

T_A= –40°C to +125°C, V_SENSE= 0 mV,

V_REF= 0 V

devices

Zero current output

voltage

V_ZL

A4 devices

A5 devices

(V_GND) + 2

(V_GND) + 3

(V_GND) + 4

(V_GND) + 9

FREQUENCY RESPONSE

A1 devices, C_LOAD= 10 pF

0.3

A2 devices, C_LOAD= 10 pF

Bandwidth

A3 devices, C_LOAD= 10 pF

kHz

A4 devices, C_LOAD= 10 pF

A5 devices, C_LOAD= 10 pF

t_S

Slew rate

V_S= 5.0 V, V_OUT= 0.5 V to 4.5 V

From current step to within 1% of final value

V/µs

µs

Settling time

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at T_A= 25°C, V_SENSE= V_IN+–V_IN–, V_S= 1.8 V to 5.0 V, V_IN+= 12 V, V_REF= V_S/ 2, and V_ENABLE= V_S(unless otherwise

noted)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

NOISE, RTI⁽¹⁾

Voltage noise density

Leakage input current

nV/√Hz

ENABLE

I_EN

100

0 V ≤V_ENABLE≤V_S

High-level input

voltage

V_IH

0.7 × V_S

V_IL

Low-level input voltage

Hysteresis

0.3 × V_S

V_HYS

300

Output leakage

disabled

I_ODIS

V_S= 5.0 V, V_OUT= 0 V to 5.0 V, V_ENABLE= 0 V

µA

POWER SUPPLY

V_S= 1.8 V, V_SENSE= 0 mV

µA

I_Q

Quiescent current

V_S= 1.8 V, V_SENSE= 0 mV, T_A= –40°C to +125°C

Quiescent current

disabled

I_QDIS

V_ENABLE= 0 V, V_SENSE= 0 mV

100

(1) RTI = referred-to-input.

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6.6 Typical Characteristics

at T_A= 25°C, V_S= 1.8 V, V_IN+= 12 V, V_REF= V_S/ 2, V_ENABLE= V_S(DDF), and for all gain options (unless otherwise noted)

-5

-10

-15

-50

-25

100

125

150

Input Offset Voltage (mV)

D001

Temperature (èC)

D006

图6-1. Input Offset Voltage Production Distribution

图6-2. Offset Voltage vs. Temperature

0.1

0.08

0.06

0.04

0.02

-0.02

-0.04

-0.06

-0.08

-0.1

-50

-25

100

125

150

D007

Temperature (èC)

Common-Mode Rejection Ratio (mV/V)

D012

图6-4. Common-Mode Rejection Ratio vs. Temperature

图6-3. Common-Mode Rejection Production Distribution

D013

D014

Gain Error (%)

A2, A3, and A4 devices

A1 devices

图6-6. Gain Error Production Distribution

图6-5. Gain Error Production Distribution

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6.6 Typical Characteristics (continued)

at T_A= 25°C, V_S= 1.8 V, V_IN+= 12 V, V_REF= V_S/ 2, V_ENABLE= V_S(DDF), and for all gain options (unless otherwise noted)

0.2

0.16

0.12

0.08

0.04

-0.04

-0.08

-0.12

-0.16

-0.2

-50

-25

100

125

150

D017

Temperature (èC)

Gain Error (%)

D018

A5 devices

图6-7. Gain Error Production Distribution

图6-8. Gain Error vs. Temperature

140

120

100

-10

-20

100

1k 10k

Frequency (Hz)

100k

100

1k 10k

Frequency (Hz)

100k

D020

D019

V_S= 5 V

图6-9. Gain vs. Frequency

图6-10. Power-Supply Rejection Ratio vs. Frequency

V_s

160

140

120

100

-40°C

25°C

125°C

V_s-0.4

V_s-0.8

GND+0.8

GND+0.4

GND

100

1k 10k

Frequency (Hz)

100k

Output Current (mA)

10 11

D021

D010

V_S= 1.8 V

A3 devices

图6-12. Output Voltage Swing vs. Output Current

图6-11. Common-Mode Rejection Ratio vs. Frequency

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6.6 Typical Characteristics (continued)

at T_A= 25°C, V_S= 1.8 V, V_IN+= 12 V, V_REF= V_S/ 2, V_ENABLE= V_S(DDF), and for all gain options (unless otherwise noted)

V_s

0.25

0.2

-40°C

25°C

125°C

V_s-1

0.15

0.1

V_s-2

0.05

-0.05

-0.1

-0.15

-0.2

-0.25

GND+2

GND+1

GND

Common-Mode Voltage (V)

15 20

Output Current (mA)

D024

D009

V_S= 5.0 V

图6-13. Output Voltage Swing vs. Output Current

图6-14. Input Bias Current vs. Common-Mode Voltage

0.25

0.2

0.15

0.1

0.05

-0.05

-0.1

-0.15

-0.2

-0.25

-1

-50

Common-Mode Voltage (V)

-25

100

125

150

D025

Temperature (èC)

D026

V_ENABLE= 0 V

图6-15. Input Bias Current vs. Common-Mode Voltage

图6-16. Input Bias Current vs. Temperature

(Shutdown)

240

V_S= 1.8 V

V_S= 3.3 V

V_S= 5.0 V

V_S= 1.8 V

V_S= 3.3 V

V_S= 5 V

210

180

150

120

-30

-50

-25

100

125

150

-50

-25

100

125

150

Temperature (èC)

D002

Temperature (èC)

D027

V_ENABLE= 0 V

图6-18. Quiescent Current vs. Temperature (Disabled)

图6-17. Quiescent Current vs. Temperature (Enabled)

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6.6 Typical Characteristics (continued)

at T_A= 25°C, V_S= 1.8 V, V_IN+= 12 V, V_REF= V_S/ 2, V_ENABLE= V_S(DDF), and for all gain options (unless otherwise noted)

100

V_S= 1.8 V

V_S= 5 V

-5

Common-Mode Voltage (V)

100

Frequency (Hz)

10k

100k

D029

D030

V_S= 5.0 V

A3 devices

图6-19. Quiescent Current vs. Common Mode Voltage

图6-20. Input-Referred Voltage Noise vs. Frequency

Time (20 ms/div)

Time (1 s/div)

D032

D031

V_S= 5.0 V, A3 devices

A3 devices

图6-22. Step Response (10-mV_PPInput Step)

图6-21. 0.1-Hz to 10-Hz Voltage Noise (Referred-To-Input)

Inverting Input

Output

V_CM

V_OUT

0 V

Time (250 ms/div)

D034

D033

A3 devices

图6-24. Inverting Differential Input Overload

图6-23. Common-Mode Voltage Transient Response

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6.6 Typical Characteristics (continued)

at T_A= 25°C, V_S= 1.8 V, V_IN+= 12 V, V_REF= V_S/ 2, V_ENABLE= V_S(DDF), and for all gain options (unless otherwise noted)

Non-inverting Input

Output

Supply Voltage

Output Voltage

0 V

Time (250 ms/div)

Time (10 ms/div)

D035

D036

V_S= 5.0 V, A3 devices

图6-25. Noninverting Differential Input Overload

图6-26. Start-Up Response

Enable

Output

Supply Voltage

Output Voltage

0 V

Time (250 ms/div)

Time (100 ms/div)

D038

D037

V_S= 5.0 V, A3 devices

图6-28. Enable and Disable Response

图6-27. Brownout Recovery

100

IBP

IBN

IBP

IBN

-20

-40

-60

-80

-5

-15

-100

-25

-60

-110 -90 -70 -50 -30 -10 10 30 50 70 90 110

Differential Input Voltage (mV)

-40

-20

Differential Input Voltage (mV)

D039

D047

V_S= 5.0 V, V_REF= 2.5 V, A1 devices

V_S= 5.0 V, V_REF= 2.5 V, A2, A3, A4, A5 devices

图6-30. IB+ and IB–vs. Differential Input Voltage

图6-29. IB+ and IB–vs. Differential Input Voltage

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6.6 Typical Characteristics (continued)

at T_A= 25°C, V_S= 1.8 V, V_IN+= 12 V, V_REF= V_S/ 2, V_ENABLE= V_S(DDF), and for all gain options (unless otherwise noted)

1.25

2.5

-40èC

25èC

125èC

25èC

-40èC

125èC

0.75

0.5

1.5

0.25

0.5

-0.5

-1

-0.25

-0.5

-0.75

-1

-1.5

-2

-2.5

0.5

1.5

2.5

Output Voltage (V)

3.5

4.5

0.5

1.5

2.5

Output Voltage (V)

3.5

4.5

D040

D048

V_S= 5.0 V, V_ENABLE= 0 V, V_REF= 2.5 V

图6-31. Output Leakage vs. Output Voltage (A1, A2, and A3

图6-32. Output Leakage vs. Output Voltage (A4 and A5 Devices)

Devices)

5000

1000

100

Gain Variants

0.1

100

10k

Frequency (Hz)

100k

10M

D050

V_S= 5.0 V, V_CM= 0 V

图6-33. Output Impedance vs. Frequency

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7 Detailed Description

7.1 Overview

The INA190-Q1 is a low bias current, low offset, 40-V common-mode, current-sensing amplifier. The DDF

SOT-23 package also features an enable pin. The INA190-Q1 is a specially designed, current-sensing amplifier

that accurately measures voltages developed across current-sensing resistors on common-mode voltages that

far exceed the supply voltage. Current is measured on input voltage rails as high as 40 V at V_IN+and V_IN–, with

a supply voltage, V_S, as low as 1.7 V. When disabled, the output goes to a high-impedance state, and the supply

current draw is reduced to less than 0.1 µA. The INA190-Q1 is intended for use in both low-side and high-side

current-sensing configurations where high accuracy and low current consumption are required.

7.2 Functional Block Diagram

ENABLE⁽¹⁾

INA190-Q1

IN+

OUT

REF

INœ

GND

1. The ENABLE pin is available only in the DDF package.

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7.3 Feature Description

7.3.1 Precision Current Measurement

The INA190-Q1 allows for accurate current measurements over a wide dynamic range. The high accuracy of the

device is attributable to the low gain error and offset specifications. The offset voltage of the INA190-Q1 is less

than 15 µV. In this case, the low offset improves the accuracy at light loads when V_IN+approaches V_IN–. Another

advantage of low offset is the ability to use a lower-value shunt resistor that reduces the power loss in the

current-sense circuit, and improves the power efficiency of the end application.

The maximum gain error of the INA190-Q1 is specified between 0.2% and 0.4% of the actual value, depending

on the gain option. As the sensed voltage becomes much larger than the offset voltage, the gain error becomes

the dominant source of error in the current-sense measurement. When the device monitors currents near the

full-scale output range, the total measurement error approaches the value of the gain error.

7.3.2 Low Input Bias Current

The INA190-Q1 is different from many current-sense amplifiers because this device offers very low input bias

current. The low input bias current of the INA190-Q1 has three primary benefits.

The first benefit is the reduction of the current consumed by the device in both the enabled and disabled states.

Classical current-sense amplifier topologies typically consume tens of microamps of current at the inputs. For

these amplifiers, the input current is the result of the resistor network that sets the gain and additional current to

bias the input amplifier. To reduce the bias current to near zero, the INA190-Q1 uses a capacitively coupled

amplifier on the input stage, followed by a difference amplifier on the output stage.

The second benefit of low bias current is the ability to use input filters to reject high-frequency noise before the

signal is amplified. In a traditional current-sense amplifier, the addition of input filters comes at the cost of

reduced accuracy. However, as a result of the low bias currents, input filters have little effect on the

measurement accuracy of the INA190-Q1.

The third benefit of low bias current is the ability to use a larger current-sense resistor. This ability allows the

device to accurately monitor currents as low as 1 µA.

7.3.3 Low Quiescent Current With Output Enable

The device features low quiescent current (I_Q), while still providing sufficient small-signal bandwidth to be usable

in most applications. The quiescent current of the INA190-Q1 is only 48 µA (typ), while providing a small-signal

bandwidth of 35 kHz in a gain of 100. The low I_Qand good bandwidth allow the device to be used in many

portable electronic systems without excessive drain on the battery. Because many applications only need to

periodically monitor current, the INA190-Q1 features an enable pin that turns off the device until needed. When

in the disabled state, the INA190-Q1 typically draws 10 nA of total supply current.

7.3.4 Bidirectional Current Monitoring

INA190-Q1 devices can sense current flow through a sense resistor in both directions. The bidirectional current-

sensing capability is achieved by applying a voltage at the REF pin to offset the output voltage. A positive

differential voltage sensed at the inputs results in an output voltage that is greater than the applied reference

voltage. Likewise, a negative differential voltage at the inputs results in output voltage that is less than the

applied reference voltage. Use 方程式1 to calculate the output voltage of the current-sense amplifier.

V_OUT= I_LOADì R_SENSEìGAIN + V

(

)

REF

(1)

where

• I_LOADis the load current to be monitored.

• R_SENSEis the current-sense resistor.

• GAIN is the gain option of the selected device.

• V_REFis the voltage applied to the REF pin.

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7.3.5 High-Side and Low-Side Current Sensing

The INA190-Q1 supports input common-mode voltages from –0.2 V to +40 V. Because of the internal topology,

the common-mode range is not restricted by the power-supply voltage (V_S). The ability to operate with common-

mode voltages greater or less than V_Sallows the INA190-Q1 to be used in high-side and low-side current-

sensing applications (see 图7-1).

Bus Supply

up to +40 V

IN+

High-Side Sensing

R_SENSE

Common-mode voltage (V_CM

is bus-voltage dependent.

)

INœ

LOAD

IN+

Low-Side Sensing

Common-mode voltage (V_CM

is always near ground and is

)

R_SENSE

isolated from bus-voltage spikes.

INœ

图7-1. High-Side and Low-Side Sensing Connections

7.3.6 High Common-Mode Rejection

The INA190-Q1 uses a capacitively coupled amplifier on the front end. Therefore, dc common-mode voltages

are blocked from downstream circuits, resulting in very high common-mode rejection. Typically, the common-

mode rejection of the INA190-Q1 is approximately 150 dB. The ability to reject changes in the dc common-mode

voltage allows the INA190-Q1 to monitor both high- and low-voltage rail currents with very little change in the

offset voltage.

7.3.7 Rail-to-Rail Output Swing

The INA190-Q1 allows linear current-sensing operation with the output close to the supply rail and ground. The

maximum specified output swing to the positive rail is V_S– 40 mV, and the maximum specified output swing to

GND is only GND + 1 mV. The close-to-rail output swing is useful to maximize the usable output range,

particularly when operating the device from a 1.8-V supply.

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7.4 Device Functional Modes

7.4.1 Normal Operation

The INA190-Q1 is in normal operation when the following conditions are met:

• The power-supply voltage (V_S) is between 1.7 V and 5.5 V.

• The common-mode voltage (V_CM) is within the specified range of –0.2 V to +40 V.

• The maximum differential input signal times the gain plus V_REFis less than the positive swing voltage V_SP

• The ENABLE pin is driven or connected to V_Sfor package options that feature this pin.

• The minimum differential input signal times the gain plus V_REFis greater than the zero load swing to GND,

V_ZL(see the Rail-to-Rail Output Swing section).

During normal operation, this device produces an output voltage that is the amplified representation of the

difference voltage from IN+ to IN–plus the voltage applied to the REF pin.

7.4.2 Unidirectional Mode

This device can be configured to monitor current flowing in one direction (unidirectional) or in both directions

(bidirectional) depending on how the REF pin is connected. 图 7-2 shows the device operating in unidirectional

mode where the output is near ground when no current is flowing. When the current flows from the bus supply to

the load, the input voltage from IN+ to IN–increases and causes the output voltage at the OUT pin to increase.

Bus Voltage

up to 40 V

V_S

1.7 V to 5.5 V

R_SENSE

C_BYPASS

0.1 µF

Load

I_SENSE

INA190-Q1

INœ

Capacitively

Coupled

Amplifier

OUT

REF

V_OUT

IN+

GND

图7-2. Typical Unidirectional Application

The linear range of the output stage is limited by how close the output voltage can approach ground under zero

input conditions. The zero current output voltage of the INA190-Q1 is very small and for most unidirectional

applications the REF pin is simply grounded. However, if the measured current multiplied by the current sense

resistor and device gain is less than the zero current output voltage then bias the REF pin to a convenient value

above the zero current output voltage to get the output into the linear range of the device. To limit common-mode

rejection errors, buffer the reference voltage connected to the REF pin.

A less-frequently used output biasing method is to connect the REF pin to the power-supply voltage, V_S. This

method results in the output voltage saturating at 40 mV less than the supply voltage when no differential input

voltage is present. This method is similar to the output saturated low condition with no differential input voltage

when the REF pin is connected to ground. The output voltage in this configuration only responds to currents that

develop negative differential input voltage relative to the device IN– pin. Under these conditions, when the

negative differential input signal increases, the output voltage moves downward from the saturated supply

voltage. The voltage applied to the REF pin must not exceed V_S.

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Another use for the REF pin in unidirectional operation is to level shift the output voltage. 图 7-3 shows an

application where the device ground is set to a negative voltage so currents biased to negative supplies, as seen

in optical networking cards, can be measured. The GND of the INA190-Q1 can be set to negative voltages, as

long as the inputs do not violate the common-mode range specification and the voltage difference between vs.

and GND does not exceed 5.5 V. In this example, the output of the INA190-Q1 is fed into a positive-biased ADC.

By grounding the REF pin, the voltages at the output will be positive and not damage the ADC. To make sure the

output voltage never goes negative, the supply sequencing must be the positive supply first, followed by the

negative supply.

+ 1.8 V

-3.3 V

C_BYPASS

0.1 µF

R_SENSE

Load

INA190-Q1

IN-

Capacitively

Coupled

Amplifier

OUT

ADC

REF

IN+

GND

- 3.3 V

图7-3. Using the REF Pin to Level-Shift Output Voltage

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7.4.3 Bidirectional Mode

The INA190-Q1 devices are bidirectional current-sense amplifiers capable of measuring currents through a

resistive shunt in two directions. This bidirectional monitoring is common in applications that include charging

and discharging operations where the current flowing through the resistor can change directions.

Bus Voltage

up to 40 V

V_S

C_BYPASS

0.1 µF

R_SENSE

1.7 V to 5.5 V

Load

I_SENSE

INA190-Q1

INœ

Reference

Voltage

Capacitively

Coupled

Amplifier

OUT

REF

V_OUT

IN+

GND

图7-4. Bidirectional Application

The user can apply a voltage to the REF pin to measure this current flowing in both directions (see 图 7-4). The

voltage applied to REF (V_REF) sets the output state that corresponds to the zero-input level state. The output

then responds by increasing above V_REFfor positive differential signals (relative to the IN–pin) and responds by

decreasing below V_REFfor negative differential signals. This reference voltage applied to the REF pin can be set

anywhere between 0 V to V_S. For bidirectional applications, V_REFis typically set at V_S/2 for equal signal range in

both current directions. In some cases, V_REFis set at a voltage other than V_S/2; for example, when the

bidirectional current and corresponding output signal do not need to be symmetrical.

7.4.4 Input Differential Overload

If the differential input voltage (V_IN+– V_IN–) times gain exceeds the voltage swing specification, the INA190-Q1

drives its output as close as possible to the positive supply or ground, and does not provide accurate

measurement of the differential input voltage. If this input overload occurs during normal circuit operation, then

reduce the value of the shunt resistor or use a lower-gain version with the chosen sense resistor to avoid this

mode of operation. If a differential overload occurs in a time-limited fault event, then the output of the INA190-Q1

returns to the expected value approximately 80 µs after the fault condition is removed.

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7.4.5 Shutdown

Specific package options of the INA190-Q1 feature an active-high ENABLE pin that shuts down the device when

pulled to ground. When the device is shut down, the quiescent current is reduced to 10 nA (typical), and the

output goes to a high-impedance state. In a battery-powered application, the low quiescent current extends the

battery lifetime when the current measurement is not needed. When the ENABLE pin is driven to the supply

voltage, the device turns back on. The typical output settling time when enabled is 130 µs.

The output of the INA190-Q1 goes to a high-impedance state when disabled. Therefore, you can connect

multiple outputs of the INA190-Q1 together to a single ADC or measurement device (see 图7-5).

When connected in this way, enable only one INA190-Q1 at a time, and make sure all devices have the same

supply voltage.

R_SENSE

Bus Voltage1

upto to +40 V

Supply Voltage

1.7 V to 5.5 V

LOAD

0.1 ꢀF

ENABLE⁽¹⁾

GPIO1

INœ

Microcontroller

ADC

OUT

REF

INA190-Q1

IN+

GPIO2

GND

R_SENSE

Bus Voltage2

upto to +40 V

Supply Voltage

1.7 V to 5.5 V

LOAD

0.1 ꢀF

ENABLE⁽¹⁾

INœ

OUT

INA190-Q1

IN+

(1) The ENABLE pin is available

only in the DDF package.

REF

GND

图7-5. Multiplexing Multiple Devices With the ENABLE Pin

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8 Application and Implementation

备注

以下应用部分中的信息不属于TI 器件规格的范围，TI 不担保其准确性和完整性。TI 的客户应负责确定

器件是否适用于其应用。客户应验证并测试其设计，以确保系统功能。

8.1 Application Information

The INA190-Q1 amplifies the voltage developed across a current-sensing resistor as current flows through the

resistor to the load or ground. The high common-mode rejection of the INA190-Q1 make it usable over a wide

range of voltage rails while still maintaining an accurate current measurement.

8.1.1 Basic Connections

图 8-1 shows the basic connections of the INA190-Q1. Place the device as close as possible to the current

sense resistor and connect the input pins (IN+ and IN–) to the current sense resistor through kelvin

connections.If present, the ENABLE pin must be controlled externally or connected to VS if not used.

Supply Voltage

1.7 V to 5.5 V

R_SENSE

Bus Voltage

œ0.2 V to +40 V

LOAD

C_BYPASS

0.1 …F

0.5 nA

(typ)

0.5 nA

(typ)

ENABLE⁽¹⁾

INœ

OUT

ADC

Microcontroller

INA190-Q1

IN+

REF

GND

(1) The ENABLE pin is available

only in the DDF package.

NOTE: To help eliminate ground offset errors between the device and the analog-to-digital converter (ADC), connect the REF pin to the

ADC reference input. When driving SAR ADCs, filter or buffer the output of the INA190-Q1 before connecting directly to the ADC.

图8-1. Basic Connections for the INA190-Q1

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8.1.2 R_SENSEand Device Gain Selection

The accuracy of any current-sense amplifier is maximized by choosing the current-sense resistor to be as large

as possible. A large sense resistor maximizes the differential input signal for a given amount of current flow and

reduces the error contribution of the offset voltage. However, there are practical limits as to how large the

current-sense resistor can be in a given application because of the resistor size and maximum allowable power

dissipation. 方程式 2 gives the maximum value for the current-sense resistor for a given power dissipation

budget:

PD_MAX

R_SENSE

I_MAX

(2)

where:

• PD_MAXis the maximum allowable power dissipation in R_SENSE

• I_MAXis the maximum current that will flow through R_SENSE

An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply

voltage, V_S, and device swing-to-rail limitations. In order to make sure that the current-sense signal is properly

passed to the output, both positive and negative output swing limitations must be examined. 方程式 3 provides

the maximum values of R_SENSEand GAIN to keep the device from exceeding the positive swing limitation.

I_MAXìR_SENSEìGAIN < V_SP- V_REF

where:

(3)

• I_MAXis the maximum current that will flow through R_SENSE

• GAIN is the gain of the current-sense amplifier.

• V_SPis the positive output swing as specified in the data sheet.

• V_REFis the externally applied voltage on the REF pin.

To avoid positive output swing limitations when selecting the value of R_SENSE, there is always a trade-off

between the value of the sense resistor and the gain of the device under consideration. If the sense resistor

selected for the maximum power dissipation is too large, then it is possible to select a lower-gain device in order

to avoid positive swing limitations.

The negative swing limitation places a limit on how small the sense resistor value can be for a given application.

方程式4 provides the limit on the minimum value of the sense resistor.

I_MINìR_SENSEìGAIN > V_SN- V_REF

where:

(4)

• I_MINis the minimum current that will flow through R_SENSE

• GAIN is the gain of the current-sense amplifier.

• V_SNis the negative output swing of the device (see Rail-to-Rail Output Swing).

• V_REFis the externally applied voltage on the REF pin.

In addition to adjusting R_SENSEand the device gain, the voltage applied to the REF pin can be slightly increased

above GND to avoid negative swing limitations.

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8.1.3 Signal Conditioning

When performing accurate current measurements in noisy environments, the current-sensing signal is often

filtered. The INA190-Q1 features low input bias currents. Therefore, adding a differential mode filter to the input

without sacrificing the current-sense accuracy is possible. Filtering at the input is advantageous because this

action attenuates differential noise before the signal is amplified. 图 8-2 provides an example of how to use a

filter on the input pins of the device.

Bus Voltage

up to 40 V

V_S

1.7 V to 5.5 V

C_BYPASS

0.1 µF

R_SENSE

Load

Capacitively Coupled

Amplifier

INA190-Q1

R_F

INœ

C_F

f_3dB

OUT

REF

V_OUT

R_DIFF

4pR_FC_F

R_F

IN+

GND

图8-2. Filter at the Input Pins

图8-3 shows the value of R_DIFFas a function of the device temperature.

A2, A3, A4, A5

-50

-25

100

125

150

Temperature (èC)

D115

图8-3. Differential Input Impedance vs. Temperature

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As the voltage drop across the sense resistor (V_SENSE) increases, the amount of voltage dropped across the

input filter resistors (R_F) also increases. The increased voltage drop results in additional gain error. Use 方程式 5

to calculate the error caused by these resistors.

≈

∆

’

R_DIFF

Error(%) = 1-

ì100

∆

◊

R_SENSE+ R_DIFF+ 2ìR

(

)

(5)

where:

• R_DIFFis the differential input impedance.

• R_Fis the added value of the series filter resistance.

The input stage of the INA190-Q1 uses a capacitive feedback amplifier topology in order to achieve high dc

precision. As a result, periodic high-frequency shunt voltage (or current) transients of significant amplitude (10

mV or greater) and duration (hundreds of nanoseconds or greater) may be amplified by the INA190-Q1, even

though the transients are greater than the device bandwidth. Use a differential input filter in these applications to

minimize disturbances at the INA190-Q1 output.

The high input impedance and low bias current of the INA190-Q1 provide flexibility in the input filter design

without impacting the accuracy of current measurement. For example, set R_F= 100 Ω and C_F= 22 nF to achieve

a low-pass filter corner frequency of 36.2 kHz. These filter values significantly attenuate most unwanted high-

frequency signals at the input without severely impacting the current sensing bandwidth or precision. If a lower

corner frequency is desired, increase the value of C_F.

Filtering the input filters out differential noise across the sense resistor. If high-frequency, common-mode noise is

a concern, add an RC filter from the OUT pin to ground. The RC filter helps filter out both differential and

common mode noise, as well as, internally generated noise from the device. The value for the resistance of the

RC filter is limited by the impedance of the load. Any current drawn by the load manifests as an external voltage

drop from the INA190-Q1 OUT pin to the load input. To select the optimal values for the output filter, use 图 6-33

and see the Closed-Loop Analysis of Load-Induced Amplifier Stability Issues Using ZOUT application report

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8.1.4 Common-Mode Voltage Transients

With a small amount of additional circuitry, the INA190-Q1 can be used in circuits subject to transients that

exceed the absolute maximum voltage ratings. The most simple way to protect the inputs from negative

transients is to add resistors in series to the IN– and IN+ pins. Use resistors that are 1 kΩ or less, and limit the

current in the ESD structures to less than 5 mA. For example, using 1-kΩresistors in series with the INA190-Q1

allows voltages as low as –5 V, while limiting the ESD current to less than 5 mA. If protection from high-voltage

or more-negative, common-voltage transients is needed, use the circuits shown in 图 8-4 and 图 8-5. When

implementing these circuits, use only Zener diodes or Zener-type transient absorbers (sometimes referred to as

transzorbs); any other type of transient absorber has an unacceptable time delay. Start by adding a pair of

resistors as a working impedance for the Zener diode (see 图 8-4). Keep these resistors as small as possible;

most often, use around 100 Ω. Larger values can be used with an effect on gain that is discussed in the Signal

Conditioning section. This circuit limits only short-term transients; therefore, many applications are satisfied with

a 100-Ω resistor along with conventional Zener diodes of the lowest acceptable power rating. This combination

uses the least amount of board space. These diodes can be found in packages as small as SOT-523 or

SOD-523.

Bus Voltage

up to 40 V

V_S

1.7 V to 5.5 V

C_BYPASS

0.1 µF

R_SENSE

Load

INA190-Q1

R_PROTECT

INœ

< 1 kW

Capacitively

Coupled

Amplifier

OUT

REF

V_OUT

R_PROTECT

IN+

< 1 kW

GND

图8-4. Transient Protection Using Dual Zener Diodes

In the event that low-power Zener diodes do not have sufficient transient absorption capability, a higher-power

transzorb must be used. The most package-efficient solution involves using a single transzorb and back-to-back

diodes between the device inputs (see 图 8-5). The most space-efficient solutions are dual, series-connected

diodes in a single SOT-523 or SOD-523 package. In either of the examples shown in 图 8-4 and 图 8-5, the total

board area required by the INA190-Q1 with all protective components is less than that of an SO-8 package, and

only slightly greater than that of an VSSOP-8 package.

Bus Voltage

up to 40 V

V_S

1.7 V to 5.5 V

C_BYPASS

0.1 µF

R_SENSE

Load

INA190-Q1

R_PROTECT

INœ

< 1 kW

Capacitively

Coupled

Amplifier

OUT

REF

Transorb

V_OUT

R_PROTECT

IN+

< 1 kW

GND

图8-5. Transient Protection Using a Single Transzorb and Input Clamps

For more information, see the Current Shunt Monitor With Transient Robustness reference design.

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8.2 Typical Applications

The low input bias current of the INA190-Q1 allows accurate monitoring of small-value currents. To accurately

monitor currents in the microamp range, increase the value of the sense resistor to increase the sense voltage

so that the error introduced by the offset voltage is small. 图 8-6 shows the circuit configuration for monitoring

low-value currents. As a result of the differential input impedance of the INA190-Q1, limit the value of R_SENSEto

1 kΩor less for best accuracy.

R_SENSE≤ 1 kO

5 V

12 V

LOAD

0.1 ꢀF

INœ

OUT

INA190-Q1

IN+

REF

GND

图8-6. Microamp Current Measurement

8.2.1 Design Requirements

表8-1 lists the design requirements for the circuit shown in 图8-6.

表8-1. Design Parameters

DESIGN PARAMETER

EXAMPLE VALUE

Power-supply voltage (V_S)

5 V

12 V

Bus supply rail (V_CM

)

Minimum sense current (I_MIN

)

1 µA

Maximum sense current (I_MAX

Device gain (GAIN)

)

150 µA

25 V/V

0 V

Reference voltage (V_REF

)

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8.2.2 Detailed Design Procedure

The maximum value of the current-sense resistor is calculated based choice of gain, value of the maximum

current the be sensed (I_MAX), and the power supply voltage(V_S). When operating at the maximum current, the

output voltage must not exceed the positive output swing specification, V_SP. For the given design parameters, 方

程式6 determines that the maximum value for R_SENSEis 1.321 kΩ.

V_SP

R_SENSE

I_MAXìGAIN

(6)

However, because this value exceeds the maximum recommended value for R_SENSE, a resistance value of 1 kΩ

must be used. When operating at the minimum current value, I_MINthe output voltage must be greater than the

swing to GND (V_SN), specification. For this example, 方程式7 determines that the output voltage at the minimum

current is 25 mV, which is greater than the value for V_SN

V_OUTMIN= I_MINìR_SENSEìGAIN

(7)

8.2.3 Application Curve

图8-7 shows the output of the device under the conditions given in 表8-1 and with R_SENSE= 1 kΩ.

3.5

2.5

1.5

0.5

Input Current (µA)

100

125

150

D031

图8-7. Typical Application DC Transfer Function

9 Power Supply Recommendations

The input circuitry of the INA190-Q1 accurately measures beyond the power-supply voltage, V_S. For example,

V_Scan be 5 V, whereas the bus supply voltage at IN+ and IN– can be as high as 40 V. However, the output

voltage range of the OUT pin is limited by the voltage on the VS pin. The INA190-Q1 also withstands the full

differential input signal range up to 40 V at the IN+ and IN– input pins, regardless of whether the device has

power applied at the VS pin. There is no sequencing requirement for V_Sand V_IN+or V_IN–

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10 Layout

10.1 Layout Guidelines

• Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique

makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing

of the current-sensing resistor commonly results in additional resistance present between the input pins.

Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can

cause significant measurement errors.

• Place the power-supply bypass capacitor as close as possible to the device power supply and ground pins.

The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added

to compensate for noisy or high-impedance power supplies.

• When routing the connections from the current-sense resistor to the device, keep the trace lengths as short

as possible. The input filter capacitor C_Fshould be placed as close as possible to the input pins of the device.

10.2 Layout Examples

Current Sense

Output

Connect REF to GND for

l in low

Note: R_Fand C_Fare optiona

noise/ripple environments

Unidirectional Measurement

or to External Reference for

Bidirectional Measurement

R_F

C_F

OUT

IN-

REF

GND

INA190-Q1

VIA to Ground Plane

R_SHUNT

Supply Voltage

(1.7 V to 5.5 V)

IN+

C_BYPASS

R_F

VIA to Ground Plane

图10-1. Recommended Layout for SC70 (DCK) Package

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l in low

Note: R_Fand C_Fare optiona

noise/ripple environments

R_F

C_F

C_BYPASS

Supply Voltage

(1.7 V to 5.5 V)

IN-

R_SHUNT

TI Device

IN+

ENABLE

Connect to VS

if not used

N.C.

OUT

REF

R_F

IN+

GND

VIA to Ground Plane

Current Sense

Output

Connect REF to GND for

Unidirectional Measurement

or to External Reference for

Bidirectional Measurement

图10-2. Recommended Layout for SOT23-8 (DDF) Package

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11 Device and Documentation Support

11.1 Documentation Support

11.1.1 Related Documentation

For related documentation see the following: Texas Instruments, INA190EVM user's guide

11.2 接收文档更新通知

要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新进行注册，即可每周接收产品信息更

改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。

11.3 支持资源

TI E2E^™支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解

答或提出自己的问题可获得所需的快速设计帮助。

链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅

TI 的《使用条款》。

11.4 Trademarks

TI E2E^™is a trademark of Texas Instruments.

所有商标均为其各自所有者的财产。

11.5 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

11.6 术语表

TI 术语表

本术语表列出并解释了术语、首字母缩略词和定义。

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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PACKAGE OPTION ADDENDUM

www.ti.com

7-Apr-2022

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

INA190A1QDCKRQ1

INA190A1QDDFRQ1

INA190A2QDCKRQ1

INA190A2QDDFRQ1

INA190A3QDCKRQ1

INA190A3QDDFRQ1

INA190A4QDCKRQ1

INA190A4QDDFRQ1

INA190A5QDCKRQ1

INA190A5QDDFRQ1

ACTIVE

SC70

DCK

DDF

DCK

DDF

DCK

DDF

DCK

DDF

DCK

DDF

3000 RoHS & Green

NIPDAU

Level-2-260C-1 YEAR

Level-1-260C-UNLIM

Level-2-260C-1 YEAR

Level-1-260C-UNLIM

Level-2-260C-1 YEAR

Level-1-260C-UNLIM

Level-2-260C-1 YEAR

Level-1-260C-UNLIM

Level-2-260C-1 YEAR

Level-1-260C-UNLIM

-40 to 125

1ES

ACTIVE SOT-23-THIN

ACTIVE SC70

ACTIVE SOT-23-THIN

ACTIVE SC70

ACTIVE SOT-23-THIN

ACTIVE SC70

ACTIVE SOT-23-THIN

ACTIVE SC70

ACTIVE SOT-23-THIN

NIPDAU

2C1W

1ET

2C2W

1EU

2C3W

1EV

2C4W

1EW

2C5W

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

7-Apr-2022

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF INA190-Q1 :

Catalog : INA190

•

NOTE: Qualified Version Definitions:

Catalog - TI's standard catalog product

•

Addendum-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

3-Jun-2022

TAPE AND REEL INFORMATION

REEL DIMENSIONS

TAPE DIMENSIONS

Reel

Diameter

Cavity

A0 Dimension designed to accommodate the component width

B0 Dimension designed to accommodate the component length

K0 Dimension designed to accommodate the component thickness

Overall width of the carrier tape

P1 Pitch between successive cavity centers

Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Sprocket Holes

Q1 Q2

Q3 Q4

Q1 Q2

Q3 Q4

User Direction of Feed

Pocket Quadrants

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

INA190A1QDCKRQ1

INA190A1QDDFRQ1

SC70

DCK

DDF

3000

180.0

8.4

2.47

3.2

2.3

3.2

1.25

1.4

4.0

8.0

SOT-23-

THIN

INA190A2QDCKRQ1

INA190A2QDDFRQ1

SC70

DCK

DDF

3000

180.0

8.4

2.47

3.2

2.3

3.2

1.25

1.4

4.0

8.0

SOT-23-

THIN

INA190A3QDCKRQ1

INA190A3QDDFRQ1

SC70

DCK

DDF

3000

180.0

8.4

2.47

3.2

2.3

3.2

1.25

1.4

4.0

8.0

SOT-23-

THIN

INA190A4QDCKRQ1

INA190A4QDDFRQ1

SC70

DCK

DDF

3000

180.0

8.4

2.47

3.2

2.3

3.2

1.25

1.4

4.0

8.0

SOT-23-

THIN

INA190A5QDCKRQ1

INA190A5QDDFRQ1

SC70

DCK

DDF

3000

180.0

8.4

2.47

3.2

2.3

3.2

1.25

1.4

4.0

8.0

SOT-23-

THIN

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

3-Jun-2022

TAPE AND REEL BOX DIMENSIONS

Width (mm)

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

INA190A1QDCKRQ1

INA190A1QDDFRQ1

INA190A2QDCKRQ1

INA190A2QDDFRQ1

INA190A3QDCKRQ1

INA190A3QDDFRQ1

INA190A4QDCKRQ1

INA190A4QDDFRQ1

INA190A5QDCKRQ1

INA190A5QDDFRQ1

SC70

SOT-23-THIN

SC70

DCK

DDF

DCK

DDF

DCK

DDF

DCK

DDF

DCK

DDF

3000

213.0

210.0

213.0

210.0

213.0

210.0

213.0

210.0

213.0

210.0

191.0

185.0

191.0

185.0

191.0

185.0

191.0

185.0

191.0

185.0

35.0

SOT-23-THIN

SC70

SOT-23-THIN

SC70

SOT-23-THIN

SC70

SOT-23-THIN

Pack Materials-Page 2

PACKAGE OUTLINE

DDF0008A

SOT-23 - 1.1 mm max height

PLASTIC SMALL OUTLINE

2.95

2.65

SEATING PLANE

TYP

PIN 1 ID

AREA

0.1 C

6X 0.65

2.95

2.85

NOTE 3

1.95

0.38

0.22

0.1

C A B

1.65

1.55

1.1 MAX

0.20

0.08

TYP

SEE DETAIL A

0.25

GAGE PLANE

0.1

0.0

0 - 8

0.6

0.3

DETAIL A

TYPICAL

4222047/C 10/2022

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed 0.15 mm per side.

www.ti.com

EXAMPLE BOARD LAYOUT

DDF0008A

SOT-23 - 1.1 mm max height

PLASTIC SMALL OUTLINE

8X (1.05)

SYMM

8X (0.45)

SYMM

6X (0.65)

(R0.05)

TYP

(2.6)

LAND PATTERN EXAMPLE

SCALE:15X

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

METAL

SOLDER MASK

DEFINED

NON SOLDER MASK

DEFINED

SOLDER MASK DETAILS

4222047/C 10/2022

NOTES: (continued)

4. Publication IPC-7351 may have alternate designs.

5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com

EXAMPLE STENCIL DESIGN

DDF0008A

SOT-23 - 1.1 mm max height

PLASTIC SMALL OUTLINE

8X (1.05)

SYMM

(R0.05) TYP

8X (0.45)

SYMM

6X (0.65)

(2.6)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:15X

4222047/C 10/2022

NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

7. Board assembly site may have different recommendations for stencil design.

www.ti.com

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邮寄地址：Texas Instruments, Post Office Box 655303, Dallas, Texas 75265

INA190A1QDCKRQ1 [TI]

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