INA211CIRSWT [TI]
26V、双向、高精度电流感应放大器 | RSW | 10 | -40 to 125;
| 型号： | INA211CIRSWT |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 26V、双向、高精度电流感应放大器 | RSW | 10 | -40 to 125 放大器 运算放大器 放大器电路 |
| 文件： | 总17页 (文件大小：584K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SC70
Package
INA210, INA211
INA212, INA213
INA214
www.ti.com............................................................................................................................................................... SBOS437A–MAY 2008–REVISED JUNE 2008
Voltage Output, High or Low Side Measurement,
Bi-Directional Zerø-Drift Series
CURRENT SHUNT MONITOR
1
FEATURES
APPLICATIONS
•
•
•
•
•
•
NOTEBOOK COMPUTERS
CELL PHONES
TELECOM EQUIPMENT
POWER MANAGEMENT
BATTERY CHARGERS
WELDING EQUIPMENT
2
•
WIDE COMMON-MODE RANGE: –0.3V to 26V
•
•
OFFSET VOLTAGE: ±35µV (Max, INA210)
(Enables shunt drops of 10mV full-scale)
ACCURACY
–
–
–
±1% Gain Error (Max over temperature)
0.5µV/°C Offset Drift (Max)
10ppm/°C Gain Drift (Max)
DESCRIPTION
•
CHOICE OF GAINS:
The INA210, INA211, INA212, INA213, and INA214
are voltage output current shunt monitors that can
sense drops across shunts at common-mode
voltages from –0.3V to 26V, independent of the
supply voltage. Five fixed gains are available: 50V/V,
100V/V, 200V/V, 500V/V, or 1000V/V. The low offset
of the Zerø-Drift architecture enables current sensing
with maximum drops across the shunt as low as
10mV full-scale.
–
–
–
–
–
INA210: 200V/V
INA211: 500V/V
INA212: 1000V/V
INA213: 50V/V
INA214: 100V/V
•
•
QUIESCENT CURRENT: 100µA (max)
SC70 PACKAGE
These devices operate from a single +2.7V to +26V
power supply, drawing a maximum of 100µA of
supply current. All versions are specified over the
extended operating temperature range (–40°C to
+125°C), and offered in an SC70 package.
RSHUNT
Supply
Load
Reference
Voltage
Output
INA21x
OUT
REF
R1
R3
IN-
GND
+2.7V to +26V
IN+
V+
PRODUCT
GAIN
R3 and R4
R1 and R2
R2
R4
INA210
INA211
INA212
INA213
INA214
200
500
1000
50
5kW
2kW
1MW
1MW
1MW
1MW
1MW
CBYPASS
0.01mF
to
1kW
20kW
10kW
0.1mF
100
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008, Texas Instruments Incorporated
INA210, INA211
INA212, INA213
INA214
SBOS437A–MAY 2008–REVISED JUNE 2008............................................................................................................................................................... www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)
PACKAGE
DESIGNATOR
PACKAGE
MARKING
PRODUCT
INA210
INA211
INA212
INA213
INA214
GAIN
200V/V
500V/V
1000V/V
50V
PACKAGE
SC70-6
SC70-6
SC70-6
SC70-6
SC70-6
DCK
DCK
DCK
DCK
DCK
CET
CEU
CEV
CFT
CFV
100V/V
(1) For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet, or
refer to our web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS(1)
Over operating free-air temperature range, unless otherwise noted.
INA210, INA211,
INA212, INA213, INA214
UNIT
V
Supply Voltage
Analog Inputs,
+26
–26 to +26
GND–0.3 to +26
GND–0.3 to (V+)+0.3
GND–0.3 to (V+)+0.3
5
Differential (VIN+)–(VIN–
)
V
(2)
(3)
VIN+, VIN–
Common-Mode
V
REF Input
Output(3)
Input Current into Any Pin(3)
Operating Temperature
Storage Temperature
V
V
mA
°C
°C
°C
V
–55 to +150
–65 to +150
+150
Junction Temperature
Human Body Model (HBM)
Charged-Device Model (CDM)
Machine Model (MM)
4000
ESD Ratings:
1000
V
200
V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
(3) Input Voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5mA.
PIN CONFIGURATION
DCK PACKAGE
SC70-6
(TOP VIEW)
REF
GND
V+
1
2
3
6
5
4
OUT
IN-
IN+
2
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Product Folder Link(s): INA210 INA211 INA212 INA213 INA214
INA210, INA211
INA212, INA213
INA214
www.ti.com............................................................................................................................................................... SBOS437A–MAY 2008–REVISED JUNE 2008
ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.
At TA = +25°C, VSENSE = VIN+ – VIN–
.
INA210, INA213 and INA214: VS = +5V, VIN+ = 12V, VREF = VS/2, unless otherwise noted.
INA211 and INA212: VS = +12V, VIN+ = 12V, VREF = VS/2, unless otherwise noted.
INA210, INA211,
INA212, INA213, INA214
PARAMETER
CONDITIONS
MIN
-0.3
TYP
MAX
26
UNIT
V
INPUT
Common-Mode Input Range
Common-Mode Rejection
VCM
CMR
VIN+ = 0V to +26V, VSENSE = 0mV
INA210, INA211, INA212,
INA214
105
100
140
120
dB
dB
INA213
Offset Voltage, RTI(1)
INA210, INA211, INA212
INA213
VOS
VSENSE = 0mV
±0.55
±5
±35
±100
±60
0.5
µV
µV
INA214
±1
µV
vs Temperature
dVOS/dT
0.1
µV/°C
VS = +2.7V to +18V, VIN+ = +18V,
VSENSE = 0mV
vs Power Supply
PSR
±0.1
±10
35
µV/V
Input Bias Current
Input Offset Current
OUTPUT
IB
VSENSE = 0mV
VSENSE = 0mV
15
28
µA
µA
IOS
±0.02
Gain, INA210
G
200
500
1000
50
V/V
VV
INA211
INA212
V/V
V/V
V/V
%
INA213
INA214
100
±0.02
3
Gain Error
VSENSE = –5mV to 5mV
±1
10
vs Temperature
Nonlinearity Error
Maximum Capacitive Load
VOLTAGE OUTPUT(2)
Swing to V+ Power Supply Rail
Swing to GND
ppm/°C
%
VSENSE = –5mV to 5mV
No sustained oscillation
RL = 10kΩ to GND
±0.01
1
nF
(V+)-0.05
(V+)-0.2
V
V
(VGND)+0.005
(VGND)+0.05
FREQUENCY RESPONSE
Bandwidth
GBW
SR
CLOAD = 10pF
14
kHz
Slew Rate
0.4
V/µs
NOISE, RTI(1)
Voltage Noise Density
POWER SUPPLY
Operating Voltage Range
Quiescent Current
Over Temperature
TEMPERATURE RANGE
Specified Range
Operating Range
Thermal Resistance
SC70
25
65
nV/√Hz
VS
+2.7
+26
100
115
V
IQ
VSENSE = 0mV
µA
µA
–40
–55
+125
+150
°C
°C
θ
JA
250
°C/W
(1) RTI = referred-to-input.
(2) See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 10).
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INA210, INA211
INA212, INA213
INA214
SBOS437A–MAY 2008–REVISED JUNE 2008............................................................................................................................................................... www.ti.com
TYPICAL CHARACTERISTICS
The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INPUT OFFSET VOLTAGE
PRODUCTION DISTRIBUTION
OFFSET VOLTAGE
vs TEMPERATURE
100
80
60
40
20
0
-20
-40
-60
-80
-100
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Offset Voltage (mV)
Figure 1.
Figure 2.
COMMON-MODE REJECTION
PRODUCTION DISTRIBUTION
COMMON-MODE REJECTION RATIO
vs TEMPERATURE
5
4
3
2
1
0
-1
-2
-3
-4
-5
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Common-Mode Rejection Ratio (mV/V)
Figure 3.
Figure 4.
GAIN ERROR
PRODUCTION DISTRIBUTION
GAIN ERROR
vs TEMPERATURE
1.0
0.8
20 Typical Units Shown
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1.0
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Gain Error (%)
Figure 5.
Figure 6.
4
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INA210, INA211
INA212, INA213
INA214
www.ti.com............................................................................................................................................................... SBOS437A–MAY 2008–REVISED JUNE 2008
TYPICAL CHARACTERISTICS (continued)
The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
GAIN
vs FREQUENCY
POWER-SUPPLY REJECTION RATIO
vs FREQUENCY
70
60
50
40
30
20
10
0
160
140
120
100
80
INA211
INA212
INA213
INA214
INA210
60
VS = +5V + 250mV Sine Disturbance
VCM = 0V
40
VCM = 0V
20
VDIF = Shorted
VDIF = 15mVPP Sine
VREF = 2.5V
0
-10
10
100 1k
10k
100k
1M
10M
1
10
100
1k
10k
100k
Frequency (Hz)
Frequency (Hz)
Figure 7.
Figure 8.
COMMON-MODE REJECTION RATIO
vs FREQUENCY
OUTPUT VOLTAGE SWING
vs OUTPUT CURRENT
160
140
120
100
80
V+
(V+) - 0.5
(V+) - 1
VS = 5V to 26V
(V+) - 1.5
(V+) - 2
VS = 2.7V
to 26V
(V+) - 2.5
(V+) - 3
VS = 2.7V
GND + 3
GND + 2.5
GND + 2
GND + 1.5
GND + 1
GND + 0.5
GND
60
VS = +5V
40
VCM = 1V Sine
VDIF = Shorted
VREF = 2.5V
TA = -40C
TA = +25C
20
VS = 2.7V to 26V
TA = +125C
0
1
10
100
1k
10k
100k
1M
0
5
10
15
20
25
30
35
40
Frequency (Hz)
Output Current (mA)
Figure 9.
Figure 10.
INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE
with SUPPLY VOLTAGE = +5V
50
INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE
with SUPPLY VOLTAGE = 0V (Shutdown)
30
25
40
IB+, IB-, VREF = 0V
20
30
20
IB+, VREF = 2.5V
15
10
IB+, IB-, VREF = 2.5V
10
5
IB+, IB-, VREF = 0V
and
0
0
IB-, VREF = 2.5V
-10
-5
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Common-Mode Voltage (V)
Common-Mode Voltage (V)
Figure 11.
Figure 12.
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INA210, INA211
INA212, INA213
INA214
SBOS437A–MAY 2008–REVISED JUNE 2008............................................................................................................................................................... www.ti.com
TYPICAL CHARACTERISTICS (continued)
The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INPUT BIAS CURRENT
vs TEMPERATURE
QUIESCENT CURRENT
vs TEMPERATURE
35
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
0
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
Figure 13.
Figure 14.
INPUT-REFERRED VOLTAGE NOISE
vs FREQUENCY
0.1Hz to 10Hz VOLTAGE NOISE
(Referred-to-Input)
100
10
1
INA212
INA213
INA214
INA210
INA211
VS = ±2.5V
VCM = 0V
VDIF = 0V
VREF = 0V
VS = ±2.5V
VREF = 0V
VIN-, VIN+ = 0V
Time (1s/div)
10
100
1k
10k
100k
Frequency (Hz)
Figure 15.
Figure 16.
STEP RESPONSE
(10mVPP Input Step)
COMMON-MODE VOLTAGE
TRANSIENT RESPONSE
Common Voltage Step
2VPP Output Signal
0V
0V
10mVPP Input Signal
Output Voltage
Time (100ms/div)
Time (50ms/div)
Figure 17.
Figure 18.
6
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Product Folder Link(s): INA210 INA211 INA212 INA213 INA214
INA210, INA211
INA212, INA213
INA214
www.ti.com............................................................................................................................................................... SBOS437A–MAY 2008–REVISED JUNE 2008
TYPICAL CHARACTERISTICS (continued)
The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.
INVERTING DIFFERENTIAL INPUT OVERLOAD
NONINVERTING DIFFERENTIAL INPUT OVERLOAD
Inverting Input Overload
Noninverting Input Overload
Output
Output
0V
0V
VS = 5V, VCM = 12V, VREF = 2.5V
VS = 5V, VCM = 12V, VREF = 2.5V
Time (250ms/div)
Time (250ms/div)
Figure 19.
Figure 20.
START-UP RESPONSE
BROWNOUT RECOVERY
Supply Voltage
Supply Voltage
Output Voltage
Output Voltage
0V
VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V
VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V
0V
Time (100ms/div)
Time (100ms/div)
Figure 21.
Figure 22.
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INA210, INA211
INA212, INA213
INA214
SBOS437A–MAY 2008–REVISED JUNE 2008............................................................................................................................................................... www.ti.com
APPLICATION INFORMATION
Alternatively, there are applications that must
measure current over a wide dynamic range that can
take advantage of the low offset on the low end of the
measurement. Most often, these applications can use
the lower gain INA213 or INA214 to accommodate
larger shunt drops on the upper end of the scale. For
instance, an INA213 operating on a 3.3V supply
could easily handle a full-scale shunt drop of 60mV,
with only 60µV of offset.
BASIC CONNECTIONS
Figure 23 shows the basic connections of the
INA210-INA214. The input pins, IN+ and IN–, should
be connected as closely as possible to the shunt
resistor to minimize any resistance in series with the
shunt resistance.
RSHUNT
Supply
Load
Reference
Voltage
UNIDIRECTIONAL OPERATION
Unidirectional operation allows the INA210-INA214 to
measure currents through a resistive shunt in one
direction. The most frequent case of unidirectional
operation sets the output at ground by connecting the
REF pin to ground. In unidirectional applications
where the highest possible accuracy is desirable at
very low inputs, bias the REF pin to a convenient
value above 50mV to get the device output swing into
the linear range for zero inputs.
INA21x
Output
OUT
REF
R1
R3
IN-
GND
+2.7V to +26V
IN+
V+
R2
R4
CBYPASS
0.01mF
to
A less frequent case of unipolar output biasing is to
bias the output by connecting the REF pin to the
supply; in this case, the quiescent output for zero
input is at quiescent supply. This configuration would
only respond to negative currents (inverted voltage
polarity at the device input).
0.1mF
Figure 23. Typical Application
Power-supply bypass capacitors are required for
stability. Applications with noisy or high impedance
power supplies may require additional decoupling
capacitors to reject power-supply noise. Connect
bypass capacitors close to the device pins.
BIDIRECTIONAL OPERATION
Bidirectional operation allows the INA210-INA214 to
measure currents through a resistive shunt in two
directions. In this case, the output can be set
anywhere within the limits of what the reference
inputs allow (that is, between 0V to V+). Typically, it
is set at half-scale for equal range in both directions.
In some cases, however, it is set at a voltage other
than half-scale when the bidirectional current is
nonsymmetrical.
POWER SUPPLY
The input circuitry of the INA210-INA214 can
accurately measure beyond its power-supply voltage,
V+. For example, the V+ power supply can be 5V,
whereas the load power supply voltage can be as
high as +26V. However, the output voltage range of
the OUT terminal is limited by the voltages on the
power-supply pin. Note also that the INA210-INA214
can withstand the full –0.3V to +26V in the input pins,
regardless of whether the device has power applied
or not.
The quiescent output voltage is set by applying
voltage to the reference input. Under zero differential
input conditions the output assumes the same voltage
as is applied to the reference input.
SELECTING RS
The
zero-drift
offset
performance
of
the
INA210-INA214 offers several benefits. Most often,
the primary advantage of the low offset characteristic
enables lower full-scale drops across the shunt. For
example, non-zero-drift current shunt monitors
typically require a full-scale range of 100mV.
The INA210-INA214 series gives equivalent accuracy
at a full-scale range on the order of 10mV. This
accuracy reduces shunt dissipation by an order of
magnitude with many additional benefits.
8
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INA210, INA211
INA212, INA213
INA214
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INPUT FILTERING
SHUTTING DOWN THE INA210-INA214
SERIES
An obvious and straightforward location for filtering is
at the output of the INA210-INA214; however, this
location negates the advantage of the low output
impedance of the internal buffer. The only other
option for filtering is at the input pins of the
INA210-INA214; this location requires consideration
of the ±30% tolerance of the input impedance.
Figure 24 shows a filter placed at the input pins.
While the INA210-INA214 series does not have a
shutdown pin, its low power consumption allows
powering from the output of a logic gate or transistor
switch that can turn on and turn off the
INA210-INA214 power-supply quiescent current.
However, in current shunt monitoring applications.
there is also a concern for how much current is
drained from the shunt circuit in shutdown conditions.
Evaluating this current drain involves considering the
simplified schematic of the INA210-INA214 in
shutdown mode shown in Figure 25.
RSHUNT << RFILTER
LOAD
VSUPPLY
RFILTER < 10W
RFILTER < 10W
Reference
Voltage
CFILTER
RSHUNT
Supply
Load
Reference
Voltage
Output
INA21x
OUT
REF
R1
R3
IN-
GND
INA21x
Output
OUT
REF
f-3dB
1
=
f-
3dB
+2.7V to +26V
p
2
(2 RFILTER) CFILTER
IN+
V+
R3
1MW
IN-
GND
R2
R4
CBYPASS
0.01mF
to
Shutdown
Control
IN+
V+
0.1mF
PRODUCT
R3 and R4
R2
R4
INA210
INA211
INA212
INA213
INA214
5kW
2kW
CBYPASS
1kW
20kW
10kW
Figure 24. Input Filter
NOTE: 1MW paths from shunt inputs to reference and INA21x outputs.
Using the lowest possible resistor values minimizes
both the initial shift in gain and effects of tolerance.
The effect on initial gain is given by Equation 1:
Figure 25. Basic Circuit for Shutting Down
INA210-INA214 with Grounded Reference
GainError% = 100 - [100 ´ {R/(R + RFILT)}]
(1)
Where R is the value for R3 or R4 from Table 1 for the
model is in question.
Note that there is typically slightly more than 1MΩ
impedance (from the combination of 1MΩ feedback
and 5kΩ input resistors) from each input of the
INA210-INA214 to the OUT pin and to the REF pin.
The amount of current flowing through these pins
depends on the respective ultimate connection. For
example, if the REF pin is grounded, the calculation
of the effect of the 1MΩ impedance from the shunt to
ground is straightforward. However, if the reference
or op amp is powered while the INA210-INA214 is
shut down, the calculation is direct; instead of
assuming 1MΩ to ground, however, assume 1MΩ to
the reference voltage. If the reference or op amp is
also shut down, some knowledge of the reference or
op amp output impedance under shutdown conditions
is required. For instance, if the reference source
behaves as an open circuit when it is unpowered,
little or no current flows through the 1MΩ path.
Table 1.
PRODUCT
INA210
INA211
INA212
INA213
INA214
GAIN
200
500
1000
50
R3 AND R4
5kΩ
2kΩ
1kΩ
20kΩ
10kΩ
100
Using an INA212, for example, the total effect on gain
error can be calculated by replacing the R with
1kΩ− 30%, (or 700Ω) or 1kΩ+ 30% (or 1.3kΩ). The
tolerance extremes of RFILT can also be inserted into
the equation. If a pair of 100Ω, 1% resistors are used
on the inputs, the initial gain error is approximately
2%.
Regarding the 1MΩ path to the output pin, the output
stage of a disabled INA210-INA214 does constitute a
good path to ground; consequently, this current is
directly proportional to a shunt common-mode voltage
impressed across a 1MΩ resistor.
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INA210, INA211
INA212, INA213
INA214
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As a final note, when the device is powered up, there
is an additional, nearly constant, and well-matched
25µA that flows in each of the inputs as long as the
shunt common-mode voltage is 3V or higher. Below
2V common-mode, the only current effects are the
result of the 1MΩ resistors.
USING THE INA210 WITH COMMON-MODE
TRANSIENTS ABOVE 26V
With a small amount of additional circuitry, the
INA210-INA214 series can be used in circuits subject
to transients higher than 26V, such as automotive
applications. Use only zener diode or zener-type
transient absorbers (sometimes referred to as
Transzorbs)— any other type of transient absorber
has an unacceptable time delay. Start by adding a
pair of resistors as shown in Figure 27 as a working
impedance for the zener. It is desirable to keep these
resistors as small as possible, most often around
10Ω. Larger values can be used with an effect on
gain that is discussed in the section on input filtering.
Because this circuit is limiting only short-term
transients, many applications are satisfied with a 10Ω
resistor along with conventional zener diodes of the
lowest power rating that can be found. This
combination uses the least amount of board space.
These diodes can be found in packages as small as
SOT-523 or SOD-523.
REF INPUT IMPEDANCE EFFECTS
As with any difference amplifier, the INA210-INA214
series common-mode rejection ratio is affected by
any impedance present at the REF input. This
concern is not a problem when the REF pin is
connected directly to most references or power
supplies. When using resistive dividers from the
power supply or a reference voltage, the REF pin
should be buffered by an op amp.
In systems where the INA210-INA214 output can be
sensed differentially, such as by a differential input
analog-to-digital converter (ADC) or by using two
separate ADC inputs, the effects of external
impedance on the REF input can be cancelled.
Figure 26 depicts a method of taking the output from
the INA210-INA214 by using the REF pin as a
reference.
RSHUNT
Supply
Load
RPROTECT
10W
RPROTECT
10W
RSHUNT
Load
Supply
Reference
Voltage
ADC
INA21x
Output
OUT
REF
Output
INA21x
OUT
REF
R1
R3
IN-
GND
R3
1MW
1MW
IN-
GND
+2.7V to +26V
IN+
V+
V+
IN+
Shutdown
Control
R2
R4
R4
CBYPASS
0.01mF
to
CBYPASS
0.1mF
Figure 26. Sensing INA210-INA214 to Cancel
Effects of Impedance on the REF Input
Figure 27. INA210-INA214 Transient Protection
Using Dual Zener Diodes
10
Submit Documentation Feedback
Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): INA210 INA211 INA212 INA213 INA214
INA210, INA211
INA212, INA213
INA214
www.ti.com............................................................................................................................................................... SBOS437A–MAY 2008–REVISED JUNE 2008
In the event that low-power zeners do not have
RSHUNT
Supply
Load
sufficient transient absorption capability and a higher
power transzorb must be used, the most
package-efficient solution then involves using a single
transzorb and back-to-back diodes between the
device inputs. The most space-efficient solutions are
dual series-connected diodes in a single SOT-523 or
SOD-523 package. This method is shown in
Figure 28. In either of these examples, the total board
area required by the INA210-INA214 with all
protective components is less than that of an SO-8
package, and only slightly greater than that of an
MSOP-8 package.
RPROTECT
10W
RPROTECT
10W
Reference
Voltage
Output
INA21x
OUT
REF
R3
1MW
1MW
IN-
GND
V+
IN+
Shutdown
Control
R4
CBYPASS
Figure 28. INA210-INA214 Transient Protection
Using a Single Transzorb and Input Clamps
Copyright © 2008, Texas Instruments Incorporated
Submit Documentation Feedback
11
Product Folder Link(s): INA210 INA211 INA212 INA213 INA214
PACKAGE OPTION ADDENDUM
www.ti.com
24-Jul-2008
PACKAGING INFORMATION
Orderable Device
INA210AIDCKR
INA210AIDCKRG4
INA210AIDCKT
INA210AIDCKTG4
INA211AIDCKR
INA211AIDCKT
INA212AIDCKR
INA212AIDCKT
INA213AIDCKR
INA213AIDCKRG4
INA213AIDCKT
INA213AIDCKTG4
INA214AIDCKR
INA214AIDCKRG4
INA214AIDCKT
INA214AIDCKTG4
Status (1)
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
SC70
DCK
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
SC70
SC70
SC70
SC70
SC70
SC70
SC70
SC70
SC70
SC70
SC70
SC70
SC70
SC70
SC70
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
24-Jul-2008
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
22-Jul-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0 (mm)
B0 (mm)
K0 (mm)
P1
W
Pin1
Diameter Width
(mm) W1 (mm)
(mm) (mm) Quadrant
INA210AIDCKT
INA211AIDCKR
INA211AIDCKT
INA212AIDCKR
INA212AIDCKT
INA213AIDCKT
INA214AIDCKR
INA214AIDCKT
SC70
SC70
SC70
SC70
SC70
SC70
SC70
SC70
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
6
6
6
6
6
6
6
6
250
3000
250
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
9.2
9.2
9.2
9.2
9.2
9.2
9.2
9.2
4.0
2.55
2.55
2.55
2.55
4.0
2.24
2.34
2.34
2.34
2.34
2.24
2.24
2.24
2.34
1.22
1.22
1.22
1.22
2.34
2.34
2.34
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
Q3
Q3
Q3
Q3
Q3
Q3
Q3
Q3
3000
250
250
3000
250
4.0
4.0
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
22-Jul-2008
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
INA210AIDCKT
INA211AIDCKR
INA211AIDCKT
INA212AIDCKR
INA212AIDCKT
INA213AIDCKT
INA214AIDCKR
INA214AIDCKT
SC70
SC70
SC70
SC70
SC70
SC70
SC70
SC70
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
6
6
6
6
6
6
6
6
250
3000
250
202.0
202.0
202.0
202.0
202.0
202.0
202.0
202.0
201.0
201.0
201.0
201.0
201.0
201.0
201.0
201.0
28.0
28.0
28.0
28.0
28.0
28.0
28.0
28.0
3000
250
250
3000
250
Pack Materials-Page 2
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