INA281A2QDBVRQ1 [TI]
INA281-Q1 AEC-Q100, â4-V to 110-V, 1.3-MHz Current-Sense Amplifier;
| 型号： | INA281A2QDBVRQ1 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | INA281-Q1 AEC-Q100, â4-V to 110-V, 1.3-MHz Current-Sense Amplifier |
| 文件： | 总25页 (文件大小：1256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INA281-Q1
SBOSA01 – NOVEMBER 2020
INA281-Q1 AEC-Q100, –4-V to 110-V, 1.3-MHz Current-Sense Amplifier
1 Features
3 Description
•
AEC-Q100 qualified for automotive applications
– Temperature grade 1: –40 °C to +125 °C, TA
Functional Safety-Capable
– Documentation available to aid functional safety
system design
Wide common-mode voltage:
– Operational voltage: −4 V to +110 V
– Survival voltage: −20 V to +120 V
Excellent CMRR:
The INA281-Q1 is a high-precision current sense
amplifier that can measure voltage drops across shunt
resistors over a wide common-mode range from –4 V
to 110 V. The negative common-mode voltage allows
the device to operate below ground, thus
accommodating precise measurement of recirculating
currents in half-bridge applications. The combination
of a low offset voltage, small gain error and high DC
CMRR enables highly accurate current measurement.
The INA281-Q1 is not only designed for DC current
measurement, but also for high-speed applications
(like fast overcurrent protection, for example) with a
high bandwidth of 1.3 MHz and an 65-dB AC CMRR
(at 50 kHz).
•
•
•
•
– 120-dB DC CMRR
– 65-dB AC CMRR at 50 kHz
Accuracy:
– Gain:
•
•
Gain error: ±0.5% (maximum)
Gain drift: ±20 ppm/°C (maximum)
The INA281-Q1 operates from a single 2.7-V to 20-V
supply, drawing 1.5 mA of supply current. The
INA281-Q1 is available with five gain options: 20 V/V,
50 V/V, 100 V/V, 200 V/V, and 500 V/V. These gain
options address wide dynamic range for current-
sensing applications.
– Offset:
•
•
Offset voltage: ±55 µV (typical)
Offset drift: ±0.1 µV/°C (typical)
•
Available gains:
The INA281-Q1 is specified over an operating
temperature range of −40 °C to +125 °C and is
offered in a space-saving SOT-23 package with two
pin-out variants.
– INA281A1-Q1, INA281B1-Q1 : 20 V/V
– INA281A2-Q1, INA281B2-Q1 : 50 V/V
– INA281A3-Q1, INA281B3-Q1 : 100 V/V
– INA281A4-Q1, INA281B4-Q1 : 200 V/V
– INA281A5-Q1, INA281B5-Q1 : 500 V/V
High bandwidth: 1.3 MHz
Device Information (1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
•
•
•
INA281-Q1
SOT-23 (5)
2.90 mm × 1.60 mm
Slew rate: 2.5V/µs
Quiescent current: 1.5 mA
(1) For all available packages, see the package option
addendum at the end of the data sheet.
2 Applications
VS
VCM
•
•
•
•
•
Automatic transmission
Automotive HVAC compressor module
Valve/motor actuator
Gasoline & diesel engine platform
Pump
ISENSE
R1
IN+
+
Current
RSENSE
Bias
Feedback
R1
OUT
-
INœ
Buffer
Load
RL
GND
Functional Block Diagram
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA281-Q1
SBOSA01 – NOVEMBER 2020
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Table of Contents
1 Features............................................................................1
2 Applications.....................................................................1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 3
6.1 Absolute Maximum Ratings ....................................... 3
6.2 ESD Ratings .............................................................. 4
6.3 Recommended Operating Conditions ........................4
6.4 Thermal Information ...................................................4
6.5 Electrical Characteristics ............................................4
7 Typical Characteristics................................................... 6
8 Detailed Description......................................................11
8.1 Overview................................................................... 11
8.2 Functional Block Diagram......................................... 11
8.3 Feature Description...................................................11
8.4 Device Functional Modes..........................................13
9 Application and Implementation..................................14
9.1 Application Information............................................. 14
9.2 Typical Application.................................................... 16
10 Power Supply Recommendations..............................17
11 Layout...........................................................................18
11.1 Layout Guidelines................................................... 18
11.2 Layout Example...................................................... 18
12 Device and Documentation Support..........................19
12.1 Documentation Support.......................................... 19
12.2 Receiving Notification of Documentation Updates..19
12.3 Support Resources................................................. 19
12.4 Trademarks.............................................................19
12.5 Electrostatic Discharge Caution..............................19
12.6 Glossary..................................................................19
13 Mechanical, Packaging, and Orderable
Information.................................................................... 19
4 Revision History
DATE
REVISION
NOTES
November 2020
*
Initial release
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5 Pin Configuration and Functions
OUT
GND
IN+
1
2
3
5
Vs
OUT
GND
Vs
1
2
3
5
INœ
4
INœ
4
IN+
Not to scale
Not to scale
Figure 5-1. INA281A-Q1: DBV Package 5-Pin
SOT-23 Top View
Figure 5-2. INA281B-Q1: DBV Package 5-Pin
SOT-23 Top View
Table 5-1. Pin Functions
PIN
TYPE
DESCRIPTION
NAME
GND
IN–
INA281A-Q1 INA281B-Q1
2
4
3
1
5
2
5
4
1
3
Ground
Input
Ground
Shunt resistor negative sense input
Shunt resistor positive sense input
Output voltage
IN+
Input
OUT
Vs
Output
Power
Power supply
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
Supply Voltage
(VS)
–0.3
22
V
Differential (VIN+) – (VIN–), INA281A5-Q1, INA281B5-Q1
Analog Inputs,
VIN+, VIN–
–6
–12
6
12
Differential (VIN+) – (VIN–), All others
V
(2)
Common-mode
–20
120
Output
GND – 0.3
–55
VS + 0.3
150
V
TA
Operating temperature
Junction temperature
Storage temperature
°C
°C
°C
TJ
150
Tstg
–65
150
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
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UNIT
SBOSA01 – NOVEMBER 2020
6.2 ESD Ratings
VALUE
Human body model (HBM), per AEC Q100-002,
all pins(1)
±2000
HBM ESD Classification Level 2
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per AEC
Q100-011, all pins
±1000
CDM ESD Classification Level C6
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
–4
NOM
48
MAX
110
UNIT
V
VCM
VS
Common-mode input range
Operating supply range
Differential sense input range
Ambient temperature
2.7
0
5
20
V
VSENSE
TA
VS / G
125
V
–40
°C
6.4 Thermal Information
INA281-Q1
THERMAL METRIC(1)
DBV (SOT-23)
5 PINS
184.7
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
105.6
47.2
ΨJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
21.5
ΨJB
46.9
RθJC(bot)
N/A
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, VCM = VIN– = 48 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
VCM
Common-mode input range(1)
TA = –40 °C to +125 °C
–4
110
V
–4 V ≤ VCM ≤ 110 V, TA = –40 °C to +125
°C
120
140
dB
dB
Common-mode rejection ratio, input
referred
CMRR
f = 50 kHz
65
±100
±55
INA281x1-Q1
INA281x2-Q1
INA281x3-Q1
INA281x4-Q1
INA281x5-Q1
TA = –40 ℃ to +125 ℃
±500
±300
±250
±200
±150
Vos
Offset voltage, input referred
±30
µV
±30
±15
dVos/dT Offset voltage drift
Power supply rejection ratio, input
referred
±0.1
±1 µV/℃
±10 µV/V
2.7 V ≤ VS ≤ 20 V,
TA = –40 °C to +125 °C
PSRR
±1.5
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at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, VCM = VIN– = 48 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
30
UNIT
uA
IB+, VSENSE = 0 V
10
20
IB
Input bias current
IB–, VSENSE = 0 V
10
20
30
uA
OUTPUT
INA281x1-Q1
20
50
V/V
V/V
V/V
V/V
V/V
%
INA281x2-Q1
G
Gain
INA281x3-Q1
100
200
500
±0.07
±2
INA281x4-Q1
INA281x5-Q1
GND + 50 mV ≤ VOUT ≤ VS – 200 mV
TA = –40 °C to +125 °C
±0.5
GERR
Gain error
±20 ppm/°C
%
NLERR
Nonlinearity error
0.01
No sustained oscillations, no isolation
resistor
Maximum capacitive load
500
pF
VOLTAGE OUTPUT
Swing to Vs (Power supply rail)
RLOAD = 10 kΩ, TA = –40 °C to +125 °C
VS – 0.07 VS – 0.15
V
V
RLOAD = 10 kΩ, VSENSE = 0 V,
= –40 °C to +125 °C
TA
Swing to ground
0.005
0.02
FREQUENCY RESPONSE
INA281x1-Q1, CLOAD = 5 pF,
VSENSE = 200 mV
1300
1300
1000
900
INA281x2-Q1, CLOAD = 5 pF,
VSENSE = 80 mV
INA281x3-Q1, CLOAD = 5 pF,
VSENSE = 40 mV
BW
SR
Bandwidth
kHz
INA281x4-Q1, CLOAD = 5 pF,
VSENSE = 20 mV
INA281x5-Q1, CLOAD = 5 pF,
VSENSE = 8 mV
900
2.5
10
Slew rate
Rising edge
V/µs
µs
VOUT = 4 V ± 0.1 V step, Output settles to
0.5%
VOUT = 4 V ± 0.1 V step, Output settles to
1%
Settling time
5
1
VOUT = 4 V ± 0.1 V step, Output settles to
5%
NOISE
Ven
Voltage noise density
50
nV/√Hz
POWER SUPPLY
Vs
Supply voltage
TA = –40 °C to +125 °C
TA = –40 °C to +125 °C
2.7
20
2
V
1.5
mA
mA
IQ
Quiescent current
2.25
(1) Common-mode voltage at both VIN+ and VIN- must not exceed the specified common-mode input range.
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7 Typical Characteristics
All specifications at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, VCM = VIN– = 48 V, unless
otherwise noted.
200
100
0
160
140
120
100
80
60
G = 20
G = 50
G = 100
G = 200
G = 500
40
-100
-200
20
0
10
100
1k 10k
Frequency (Hz)
100k
1M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Figure 7-2. Common-Mode Rejection Ratio vs
Frequency
Figure 7-1. Common-Mode Rejection Ratio vs
Temperature
60
50
40
30
20
0.250
G = 20
G = 50
G = 100
G = 200
G = 500
0.125
0.000
G = 20
G = 50
G = 100
G = 200
G = 500
10
0
-0.125
-10
-0.250
10
100
1k
10k
Frequency (Hz)
100k
1M
10M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Figure 7-3. Gain vs Frequency
Figure 7-4. Gain Error vs Temperature
25
20
15
10
5
25
20
15
10
5
VS = 2.7 to 20V, VCM = 48V
VS = 2.7 to 20V, VCM = 120V
VS = 2.7 to 20V, VCM = -4V
VS = 0V, VCM = 120V
VS = 5V
VS = 20V
VS = 2.7V
VS = 0V
VS = 0V, VCM = -4V
0
0
VS = 0V and 20V, VCM = -20V
-5
-5
-10
-10
-20
0
20
40
60
Common-Mode Voltage (V)
80
100
120
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
VSENSE = 0 V
Figure 7-6. Input Bias Current vs Temperature
Figure 7-5. Input Bias Current vs Common-Mode
Voltage
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240
200
160
120
80
140
120
100
80
IB+
IB-
IB+
IB-
IB+, VS = 0V
IB-, VS = 0V
IB+, VS = 0V
IB-, VS = 0V
60
40
40
20
0
0
-40
-80
-120
-20
-40
-60
-80
-160
0
200
400
600
800
1000
0
100
200
VSENSE (mV)
300
400
VSENSE (mV)
Figure 7-7. Input Bias Current vs VSENSE, A1
devices
Figure 7-8. Input Bias Current vs VSENSE, A2 and
A3 devices
100
VS
IB+, G=200
IB+, G=500
IB-
25èC
125èC
-40èC
80
VS - 1
IB+, VS = 0V
IB-, VS = 0V
60
VS - 2
40
20
0
GND + 2
GND + 1
GND
-20
0
20
40
60
80
100
0
5
10
15
20
25
Output Current (mA)
30
35
40
VSENSE (mV)
VS = 2.7 V
Figure 7-9. Input Bias Current vs VSENSE, A4 and
A5 devices
Figure 7-10. Output Voltage vs Output Current
VS
VS
25èC
125èC
-40èC
25èC
125èC
-40èC
VS - 1
VS - 2
VS - 3
VS - 1
VS - 2
VS - 3
GND + 3
GND + 2
GND + 1
GND
GND + 3
GND + 2
GND + 1
GND
0
5
10
15
Output Current (mA)
20
25
30
35
40
0
5
10
15
Output Current (mA)
20
25
30
35
40
VS = 5 V
VS = 20 V
Figure 7-11. Output Voltage vs Output Current
Figure 7-12. Output Voltage vs Output Current
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1000
500
0.00
-0.10
-0.20
-0.30
-0.40
-0.50
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
VS = 5V
VS = 20V
VS = 2.7V
0.02
0.01
10
100
1k
10k
Frequency (Hz)
100k
1M
10M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Figure 7-13. Output Impedance vs Frequency
Figure 7-14. Swing to Supply vs Temperature
0.020
100
VS = 5V
VS = 20V
VS = 2.7V
G = 20
G = 500
80
70
60
0.015
0.010
0.005
0.000
50
40
30
20
10
10
100
1k 10k
Frequency (Hz)
100k
1M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Figure 7-16. Input Referred Noise vs Frequency
Figure 7-15. Swing to GND vs Temperature
2
1.8
1.6
VS = 20V
1.4
VS = 5V
1.2
1
G = 20 to 50
VS = 2.7V
G = 100 to 500
0.8
0
2.5
5
7.5
10
12.5
Output Voltage (V)
15
17.5
20
Time (1 s/div)
Figure 7-17. Input Referred Noise
Figure 7-18. Quiescent Current vs Output Voltage
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2
50
40
30
20
10
0
VS = 5V
VS = 20V
VS = 2.7V
VS = 5V, Sourcing
VS = 5V, Sinking
VS = 20V, Sourcing
VS = 20V, Sinking
VS = 2.7V, Sourcing
VS = 2.7V, Sinking
1.8
1.6
1.4
1.2
1
0.8
-75 -50 -25
0
25
50
75 100 125 150 175
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Temperature (èC)
Figure 7-19. Quiescent Current vs Temperature
Figure 7-20. Short-Circuit Current vs Temperature
2
2
VS = 5V
VS = 20V
VS = 2.7V
1.8
1.6
1.4
1.2
1.8
1.6
1.4
1.2
1
25èC
1
125èC
-40èC
0.8
0.8
0
2
4
6
8
Supply Voltage (V)
10
12
14
16
18
20
-20
0
20
40
Common-Mode Voltage (V)
60
80
100
120
Figure 7-21. Quiescent Current vs Supply Voltage Figure 7-22. Quiescent Current vs Common-Mode
Voltage
VCM
VOUT
0V
0V
0V
0V
Time (10 ms/div)
Time (12.5ms/div)
Figure 7-24. INA281x3 Step Response
Figure 7-23. Common-Mode Voltage Fast Transient
Pulse
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Supply Voltage
Output Voltage
Supply Voltage
Output Voltage
0V
0V
Time (5 ms/div)
Time (50 ms/div)
Figure 7-25. Start-Up Response
Figure 7-26. Supply Transient Response
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8 Detailed Description
8.1 Overview
The INA281-Q1 is a high- or low-side current-sense amplifier that offers a wide common-mode range, precision
zero-drift topology, excellent common-mode rejection ratio (CMRR), high bandwidth, and fast slew rate. Different
gain versions are available to optimize the output dynamic range based on the application. The INA281-Q1 is
designed using a transconductance architecture with a current-feedback amplifier that enables low bias currents
of 20 µA with a common-mode voltage of 110 V.
8.2 Functional Block Diagram
VS
Load
Supply
ISENSE
R1
IN+
+
Current
RSENSE
Bias
Feedback
R1
OUT
-
INœ
Buffer
Load
RL
GND
8.3 Feature Description
8.3.1 Amplifier Input Common-Mode Signal
The INA281-Q1 supports large input common-mode voltages from –4 V to +110 V. Because of the internal
topology, the common-mode range is not restricted by the power-supply voltage (V S). This allows for the
INA281-Q1 to be used for both low- and high-side current-sensing applications.
8.3.1.1 Input-Signal Bandwidth
The INA281-Q1 –3-dB bandwidth is gain-dependent, with several gain options of 20 V/V, 50 V/V, 100 V/V, 200
V/V, and 500 V/V. The unique multistage design enables the amplifier to achieve high bandwidth at all gains.
This high bandwidth provides the throughput and fast response that is required for the rapid detection and
processing of overcurrent events.
The bandwidth of the device also depends on the applied V SENSE voltage. Figure 8-1 shows the bandwidth
performance profile of the device over frequency as output voltage increases for each gain variation. As shown
in Figure 8-1, the device exhibits the highest bandwidth with higher VSENSE voltages, and the bandwidth is higher
with lower device gain options. Individual requirements determine the acceptable limits of error for high-
frequency, current-sensing applications. Testing and evaluation in the end application or circuit is required to
determine the acceptance criteria and validate whether or not the performance levels meet the system
specifications.
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1400
1200
1000
800
600
INA281A1
INA281A2
INA281A3
INA281A4
INA281A5
400
200
0
1
2
3
Output Voltage (V)
Figure 8-1. Bandwidth vs Output Voltage
8.3.1.2 Low Input Bias Current
The INA281-Q1 inputs draw a 20-µA (typical) bias current at a common-mode voltage as high as 110 V, which
enables precision current sensing on applications that require lower current leakage.
8.3.1.3 Low VSENSE Operation
The INA281-Q1 operates with high performance across the entire valid V SENSE range. The zero-drift input
architecture of the INA281-Q1 provides the low offset voltage and low offset drift needed to measure low VSENSE
levels accurately across the wide operating temperature of –40 °C to +125 °C. Low V SENSE operation is
particularly beneficial when using low ohmic shunts for low current measurements, as power losses across the
shunt are significantly reduced.
8.3.1.4 Wide Fixed Gain Output
The INA281-Q1 gain error is < 0.5% at room temperature, with a maximum drift of 20 ppm/°C over the full
temperature range of –40 °C to +125 °C. TheINA281-Q1 is available in multiple gain options of 20 V/V, 50 V/V,
100 V/V, 200 V/V, and 500 V/V, which the system designer should select based on their desired signal-to-noise
ratio and other system requirements.
The INA281-Q1 closed-loop gain is set by a precision, low-drift internal resistor network. The ratio of these
resistors are excellently matched, while the absolute values may vary significantly. TI does not recommend
adding additional resistance around the INA281-Q1 to change the effective gain because of this variation,
however. The typical values of the gain resistors are described in Table 8-1.
Table 8-1. Fixed Gain Resistor
GAIN
R1
RL
20 (V/V)
50 (V/V)
100 (V/V)
200 (V/V)
500 (V/V)
25 kΩ
10 kΩ
10 kΩ
5 kΩ
500 kΩ
500 kΩ
1000 kΩ
1000 kΩ
1000 kΩ
2 kΩ
8.3.1.5 Wide Supply Range
The INA281-Q1 operates with a wide supply range from 2.7 V to 20 V. The output stage supports a wide output
range, while the INA281-Q1x1 (gain of 20 V/V) at a supply voltage of 20 V allows a maximum acceptable
differential input of 1 V. When paired with the small input offset voltage of the INA281-Q1, systems with very
wide dynamic ranges of current measurement can be supported.
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8.4 Device Functional Modes
8.4.1 Unidirectional Operation
The INA281-Q1 measures the differential voltage developed by current flowing through a resistor that is
commonly referred to as a current-sensing resistor or a current-shunt resistor. The INA281-Q1 operates in
unidirectional mode only, meaning it only senses current sourced from a power supply to a system load as
shown in Figure 8-2.
5 V
48-V
Supply
ISENSE
R1
IN+
+
Current
Feedback
RSENSE
Bias
R1
OUT
-
INœ
Buffer
RL
Load
GND
Figure 8-2. Unidirectional Application
The linear range of the output stage is limited to how close the output voltage can approach ground under zero-
input conditions. The zero current output voltage of the INA281-Q1 is very small, with a maximum of GND + 20
mV. Make sure to apply a differential input voltage of (20 mV / Gain) or greater to keep the INA281-Q1 output in
the linear region of operation.
8.4.2 High Signal Throughput
With a bandwidth of 1.3 MHz at a gain of 20 V/V and a slew rate of 2.5 V/µs, the INA281-Q1 is specifically
designed for detecting and protecting applications from fast inrush currents. As shown in Table 8-2, the INA281-
Q1 responds in less than 2 µs for a system measuring a 75-A threshold on a 2-mΩ shunt.
Table 8-2. Response Time
INA281-Q1
PARAMETER
Gain
EQUATION
AT VS = 5 V
20 V/V
100 A
75 A
G
IMAX
Maximum current
IThreshold
RSENSE
VOUT_MAX
VOUT_THR
SR
Threshold current
Current sense resistor value
Output voltage at maximum current
Output voltage at threshold current
Slew rate
2 mΩ
VOUT_MAX = IMAX × RSENSE × G
VOUT_THR = ITHR × RSENSE × G
4 V
3 V
2.5 V/µs
< 2 µs
Output response time
Tresponse= VOUT_THR / SR
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
9.1 Application Information
The INA281-Q1 amplifies the voltage developed across a current-sensing resistor as current flows through the
resistor to the load. The wide input common-mode voltage range and high common-mode rejection of the
INA281-Q1 make it usable over a wide range of voltage rails while still maintaining an accurate current
measurement.
9.1.1 RSENSE and Device Gain Selection
The accuracy of any current-sense amplifier is maximized by choosing the current-sense resistor to be as large
as possible. A large sense resistor maximizes the differential input signal for a given amount of current flow and
reduces the error contribution of the offset voltage. However, there are practical limits as to how large the
current-sense resistor can be in a given application because of the resistor size and maximum allowable power
dissipation. Equation 1 gives the maximum value for the current-sense resistor for a given power dissipation
budget:
PDMAX
RSENSE
<
2
IMAX
(1)
where:
•
•
PDMAX is the maximum allowable power dissipation in RSENSE
IMAX is the maximum current that will flow through RSENSE
.
.
An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply
voltage, VS, and device swing-to-rail limitations. To make sure that the current-sense signal is properly passed to
the output, both positive and negative output swing limitations must be examined. Equation 2 provides the
maximum values of RSENSE and GAIN to keep the device from exceeding the positive swing limitation.
IMAX ª RSENSE ª GAIN < VSP
(2)
where:
•
•
•
IMAX is the maximum current that will flow through RSENSE
GAIN is the gain of the current-sense amplifier.
VSP is the positive output swing as specified in the data sheet.
.
To avoid positive output swing limitations when selecting the value of R SENSE, there is always a trade-off
between the value of the sense resistor and the gain of the device under consideration. If the sense resistor
selected for the maximum power dissipation is too large, then it is possible to select a lower-gain device to avoid
positive swing limitations.
The negative swing limitation places a limit on how small the sense resistor value can be for a given application.
Equation 3 provides the limit on the minimum value of the sense resistor.
IMIN ª RSENSE ª GAIN > VSN
(3)
where:
•
IMIN is the minimum current that will flow through RSENSE.
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•
•
GAIN is the gain of the current-sense amplifier.
VSN is the negative output swing of the device.
Table 9-1 shows an example of the different results obtained from using five different gain versions of the
INA281-Q1. From the table data, the highest gain device allows a smaller current-shunt resistor and decreased
power dissipation in the element.
Table 9-1. RSENSE Selection and Power Dissipation (1)
RESULTS AT VS = 5 V
PARAMETER
EQUATION
A1, B1
A2, B2
A3, B3
A4, B4
A5, B5
DEVICES
DEVICES
DEVICES
DEVICES
DEVICES
G
Gain
20 V/V
250 mV
25 mΩ
2.5 W
50 V/V
100 mV
10 mΩ
1 W
100 V/V
50 mV
5 mΩ
200 V/V
25 mV
500 V/V
10 mV
1 mΩ
VDIFF
RSENSE
PSENSE
Ideal differential input voltage
VDIFF = VOUT / G
Current sense resistor value
RSENSE = VDIFF / IMAX
2.5 mΩ
0.25 W
Current-sense resistor power dissipation
RSENSE × IMAX
2
0.5W
0.1 W
(1) Design example with 10-A full-scale current with maximum output voltage set to 5 V.
9.1.2 Input Filtering
Note
Input filters are not required for accurate measurements using the INA281-Q1, and use of filters in this
location is not recommended. If filter components are used on the input of the amplifier, follow the
guidelines in this section to minimize the effects on performance.
Based strictly on user design requirements, external filtering of the current signal may be desired. The initial
location that can be considered for the filter is at the output of the current-sense amplifier. Although placing the
filter at the output satisfies the filtering requirements, this location changes the low output impedance measured
by any circuitry connected to the output voltage pin. The other location for filter placement is at the current-sense
amplifier input pins. This location also satisfies the filtering requirement, but the components must be carefully
selected to minimally impact device performance. Figure 9-1 shows a filter placed at the input pins.
VS
VCM
1
f3dB
=
4ŒRINCIN
ISENSE
RIN
R1
R1
IN+
+
CIN
Current
RSENSE
Bias
Feedback
RIN
OUT
-
INœ
Buffer
Load
RL
GND
Figure 9-1. Filter at Input Pins
External series resistance provides a source of additional measurement error, so keep the value of these series
resistors to 10 Ω or less to reduce loss of accuracy. The internal bias network shown in Figure 9-1 creates a
mismatch in input bias currents (see Figure 7-7, Figure 7-8, and Figure 7-9) when a differential voltage is applied
between the input pins. If additional external series filter resistors are added to the circuit, a mismatch is created
in the voltage drop across the filter resistors. This voltage is a differential error voltage in the shunt resistor
voltage. In addition to the absolute resistor value, mismatch resulting from resistor tolerance can significantly
impact the error because this value is calculated based on the actual measured resistance.
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The measurement error expected from the additional external filter resistors can be calculated using Equation 4,
and the gain error factor is calculated using Equation 5.
Gain Error (%) = 100 - (100 ´ Gain Error Factor)
(4)
The gain error factor, shown in Equation 4, can be calculated to determine the gain error introduced by the
additional external series resistance. Equation 4 calculates the deviation of the shunt voltage, resulting from the
attenuation and imbalance created by the added external filter resistance. Table 9-2 provides the gain error
factor and gain error for several resistor values.
RB × R1
Gain Error Factor =
(RB × R1) + (RB × RIN) + (2 × RIN × R1)
(5)
Where:
•
•
•
RIN is the external filter resistance value.
R1 is the INA281-Q1 input resistance value specified in Table 8-1.
RB in the internal bias resistance, which is 6600 Ω ± 20%.
Table 9-2. Example Gain Error Factor and Gain Error for 10-Ω External Filter Input Resistors
DEVICE (GAIN)
A1 devices (20)
A2 devices (50)
A3 devices (100)
A4 devices (200)
A5 devices (500)
GAIN ERROR FACTOR
GAIN ERROR (%)
0.99658
–0.34185
0.99598
–0.40141
0.99598
–0.40141
0.99499
–0.50051
0.99203
–0.79663
9.2 Typical Application
The INA281-Q1 is a unidirectional, current-sense amplifier capable of measuring currents through a resistive
shunt with shunt common-mode voltages from –4 V to +110 V.
24 V
Solenoid
RSENSE
ISENSE
MCU
+
œ
ADC
INA
5 V
GND
Figure 9-2. Current Sensing in a Solenoid Application
9.2.1 Design Requirements
In this example application, the common-mode voltage ranges from 0 V to 24 V. The maximum sense current is
1.5 A, and a 5-V supply is available for the INA281-Q1. Following the design guidelines from Section 9.1.1, a R
of 50 mΩ and a gain of 50 V/V are selected to provide good output dynamic range. Table 9-3 lists the
SENSE
design setup for this application.
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Table 9-3. Design Parameters
DESIGN PARAMETERS
EXAMPLE VALUE
Power supply voltage
Common mode voltage range
Maximum sense current
RSENSE resistor
5 V
0 V to 24 V
1.5 A
50 mΩ
Gain option
50 V/V
9.2.2 Detailed Design Procedure
The INA281-Q1 is designed to measure current in a typical solenoid application. The INA281-Q1 measures
current across the 50-mΩ shunt that is placed at the output of the half-bridge. The INA281-Q1 measures the
differential voltage across the shunt resistor, and the signal is internally amplified with a gain of 50 V/V. The
output of the INA281-Q1 is connected to the analog-to-digital converter (ADC) of an MCU to digitize the current
measurements.
Solenoid loads are highly inductive and are often prone to failure. Solenoids are often used for position control,
precise fluid control, and fluid regulation. Measuring real-time current on the solenoid continuously can indicate
premature failure of the solenoid which can lead to a faulty control loop in the system. Measuring high-side
current also indicates if there are any ground faults on the solenoid or the FETs that can be damaged in an
application. TheINA281-Q1, with high bandwidth and slew rate, can be used to detect fast overcurrent conditions
to prevent the solenoid damage from short-to-ground faults.
9.2.2.1 Overload Recovery With Negative VSENSE
The INA281-Q1 is a unidirectional current-sense amplifier that is meant to operate with a positive differential
input voltage (VSENSE). If negative VSENSE is applied, the device is placed in an overload condition and requires
time to recover once VSENSE returns positive. The required overload recovery time increases with more negative
VSENSE
.
9.2.3 Application Curve
Figure 9-3 shows the output response of a solenoid.
6
4
2
0
VCM
VOUT
40
30
20
10
0
Time (50 ms/div)
Figure 9-3. Solenoid Control Current Response
10 Power Supply Recommendations
The INA281-Q1 power supply can be 5 V, whereas the input common-mode voltage can vary between –4 V to
110 V. The output voltage range of the OUT pin, however, is limited by the voltage on the power-supply pin.
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11 Layout
11.1 Layout Guidelines
Attention to good layout practices is always recommended.
•
Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing
of the current-sensing resistor commonly results in additional resistance present between the input pins.
Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can
cause significant measurement errors.
•
Place the power-supply bypass capacitor as close as possible to the device power supply and ground pins.
The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added
to compensate for noisy or high-impedance power supplies.
11.2 Layout Example
Supply
Voltage
OUT
GND
IN +
Vs
Bypass
Cap
Via to GND Plane
Ground Plane
IN -
Figure 11-1. INA281A Recommended Layout
OUT
GND
Vs
IN -
Via to GND Plane
Supply
Voltage
IN +
Bypass
Cap
Ground Plane
Figure 11-2. INA281B Recommended Layout
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following: Texas Instruments, INA281EVM user's guide
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
12.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Nov-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
Qty
(1)
(2)
(3)
(4/5)
(6)
INA281A1QDBVRQ1
INA281A2QDBVRQ1
INA281A3QDBVRQ1
INA281A4QDBVRQ1
INA281A5QDBVRQ1
INA281B1QDBVRQ1
INA281B2QDBVRQ1
INA281B3QDBVRQ1
INA281B4QDBVRQ1
INA281B5QDBVRQ1
ACTIVE
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
5
5
5
5
5
5
5
5
5
5
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
2DLC
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Green (RoHS
& no Sb/Br)
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
2DMC
2DNC
2DOC
2DPC
24AC
24BC
24CC
24DC
24EC
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
11-Nov-2020
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF INA281-Q1 :
Catalog: INA281
•
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
•
Addendum-Page 2
PACKAGE OUTLINE
DBV0005A
SOT-23 - 1.45 mm max height
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR
C
3.0
2.6
0.1 C
1.75
1.45
1.45
0.90
B
A
PIN 1
INDEX AREA
1
2
5
2X 0.95
1.9
3.05
2.75
1.9
4
3
0.5
5X
0.3
0.15
0.00
(1.1)
TYP
0.2
C A B
0.25
GAGE PLANE
0.22
0.08
TYP
8
0
TYP
0.6
0.3
TYP
SEATING PLANE
4214839/E 09/2019
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Refernce JEDEC MO-178.
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
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EXAMPLE BOARD LAYOUT
DBV0005A
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
PKG
5X (1.1)
1
5
5X (0.6)
SYMM
(1.9)
2
3
2X (0.95)
4
(R0.05) TYP
(2.6)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:15X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
EXPOSED METAL
EXPOSED METAL
0.07 MIN
ARROUND
0.07 MAX
ARROUND
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4214839/E 09/2019
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
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EXAMPLE STENCIL DESIGN
DBV0005A
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
PKG
5X (1.1)
1
5
5X (0.6)
SYMM
(1.9)
2
3
2X(0.95)
4
(R0.05) TYP
(2.6)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:15X
4214839/E 09/2019
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.
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IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you
permission to use these resources only for development of an application that uses the TI products described in the resource. Other
reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third
party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims,
damages, costs, losses, and liabilities arising out of your use of these resources.
TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on
ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable
warranties or warranty disclaimers for TI products.
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2020, Texas Instruments Incorporated
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Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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