INA290A3QDCKRQ1 [TI]
INA290-Q1 AEC-Q100, 2.7-V to 120-V, 1.1-MHz, Ultra-Precise Current Sense Amplifier;
| 型号： | INA290A3QDCKRQ1 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | INA290-Q1 AEC-Q100, 2.7-V to 120-V, 1.1-MHz, Ultra-Precise Current Sense Amplifier |
| 文件： | 总27页 (文件大小：1705K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INA290-Q1
SBOS995A – OCTOBER 2019 – REVISED NOVEMBER 2020
INA290-Q1 AEC-Q100, 2.7-V to 120-V, 1.1-MHz, Ultra-Precise Current Sense Amplifier
1 Features
3 Description
•
AEC-Q100 qualified for automotive applications:
– Temperature grade 1: –40°C to +125°C, TA
Functional Safety-Capable
– Documentation available to aid functional safety
system design
Wide common-mode voltage:
– Operational voltage: 2.7 V to 120 V
– Survival voltage: −20 V to +122 V
Excellent CMRR:
– 160-dB DC
– 85-dB AC at 50 kHz
Accuracy
– Gain:
The INA290-Q1 is an ultra-precise current sense
amplifier that can measure voltage drops across shunt
resistors over a wide common-mode range from 2.7 V
to 120 V. It is in a highly space-efficient SC-70
package with a PCB footprint of only 2.0 mm × 2.1
mm. The ultra-precise current measurement accuracy
is achieved thanks to the combination of an ultra-low
offset voltage of ±12 µV (maximum), a small gain
error of ±0.1% (maximum), and a high DC CMRR of
160 dB (typical). The INA290-Q1 is not only designed
for DC current measurement, but also for high-speed
applications (like fast overcurrent protection, for
example) with a high bandwidth of 1.1 MHz (at gain of
20 V/V) and an 85-dB AC CMRR (at 50 kHz).
•
•
•
•
•
•
Gain error: ±0.1% (maximum)
Gain drift: ±5 ppm/°C (maximum)
The INA290-Q1 provides the capability to make ultra-
precise current measurements by sensing the voltage
drop across a shunt resistor over a wide common-
mode range from 2.7 V to 120 V. The INA290-Q1 is
available in the SC-70 package minimizing solution
size area.
– Offset:
•
•
Offset voltage: ±12 µV (maximum)
Offset drift: ±0.2 µV/°C (maximum)
•
Available gains:
Device Information
– A1 devices: 20 V/V
– A2 devices: 50 V/V
– A3 devices: 100 V/V
– A4 devices: 200 V/V
– A5 devices: 500 V/V
High bandwidth: 1.1 MHz
Slew rate: 2 V/µs
PART NUMBER
PACKAGE(1)
BODY SIZE (NOM)
INA290-Q1
SC-70 (5)
2.00 mm × 1.25 mm
(1) For all available packages, see the package option
addendum at the end of the data sheet.
•
•
•
VS
VBUS
Quiescent current: 370 µA
ISENSE
R1
IN+
+
2 Applications
Current
RSENSE
Bias
Feedback
R1
•
•
•
•
•
Solid-state LiDAR
OUT
œ
INœ
Buffer
Automotive HVAC compressor module
Automotive interior heater module
Automotive parking heater module
Automotive Pumps
ADC
Load
RL
GND
Typical Application
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA290-Q1
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SBOS995A – OCTOBER 2019 – REVISED NOVEMBER 2020
Table of Contents
1 Features............................................................................1
2 Applications.....................................................................1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions ..................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings ....................................... 4
6.2 ESD Ratings .............................................................. 4
6.3 Recommended Operating Conditions ........................4
6.4 Thermal Information ...................................................4
6.5 Electrical Characteristics ............................................5
6.6 Typical Characteristics................................................6
7 Detailed Description......................................................12
7.1 Overview...................................................................12
7.2 Functional Block Diagram.........................................12
7.3 Feature Description...................................................13
7.4 Device Functional Modes..........................................15
8 Application and Implementation..................................16
8.1 Application Information............................................. 16
8.2 Typical Application.................................................... 18
9 Power Supply Recommendations................................20
10 Layout...........................................................................20
10.1 Layout Guidelines................................................... 20
10.2 Layout Example...................................................... 20
11 Device and Documentation Support..........................21
11.1 Documentation Support.......................................... 21
11.2 Receiving Notification of Documentation Updates..21
11.3 Support Resources................................................. 21
11.4 Trademarks............................................................. 21
11.5 Electrostatic Discharge Caution..............................21
11.6 Glossary..................................................................21
12 Mechanical, Packaging, and Orderable
Information.................................................................... 21
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision * (October 2019) to Revision A (November 2020)
Page
•
•
Changed the data sheet status from Advanced Information to Production Data ...............................................1
Updated the numbering format for tables, figures, and cross-references throughout the document .................1
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5 Pin Configuration and Functions
OUT
GND
VS
1
2
3
5
INœ
4
IN+
Not to scale
Figure 5-1. DCK Package 5-Pin SC-70 Top View
Table 5-1. Pin Functions
PIN
TYPE
DESCRIPTION
NAME
GND
IN–
NO.
2
Ground
Input
Ground
5
Connect to load side of shunt resistor
Connect to supply side of shunt resistor
Output voltage
IN+
4
Input
OUT
VS
1
Output
Power
3
Power supply
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
MAX
22
UNIT
V
Vs
Supply Voltage
Differential (VIN+) – (VIN–
)
–30
30
V
Analog Inputs,
VIN+, VIN–
(2)
Common - mode
–20
122
V
Output
TA
GND – 0.3
–55
Vs + 0.3
150
V
Operating Temperature
Junction temperature
Storage temperature
°C
°C
°C
TJ
150
Tstg
–65
150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) VIN+ and VIN– are the voltages at the VIN+ and VIN– pins, respectively.
6.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per AEC Q100-002, all pins(1)
HBM ESD Classification Level 2
±2000
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per AEC Q100-011, all pins
CDM ESD Classification Level C6
±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VS
NOM
48
MAX
120
20
UNIT
V
VCM
VS
Common-mode input range(1)
Operating supply range
Ambient temperature
2.7
–40
5
V
TA
125
°C
(1) Common-mode voltage can go below VS under certain conditions. See Figure 7-1 for additional information on operating range.
6.4 Thermal Information
INA290-Q1
THERMAL METRIC(1)
DCK (SC-70)
5 PINS
191.6
144.4
69.2
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
ΨJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
46.2
ΨJB
69.0
RθJC(bot)
N/A
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, VCM = VIN– = 48 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
INPUT
VCM = 2.7 V to 120 V, TA = –40 °C to +125 °C
140
160
85
5
CMRR
Common-mode rejection ratio
dB
f = 50 kHz
A1 devices
±25
A2 devices
3
±20
µV
±15
Vos
Offset voltage, input referred
A3 devices
3
A4, A5 devices
TA = –40 °C to +125 °C
2
±12
dVos/dT Offset voltage drift
0.2 µV/℃
Power supply rejection ratio,
input referred
PSRR
VS = 2.7 V to 20 V, TA = –40 °C to +125 °C
0.05
±0.5
µV/V
IB+, VSENSE = 0 mV
IB–, VSENSE = 0 mV
10
10
20
20
30
30
IB
Input bias current
µA
OUTPUT
A1 devices
A2 devices
A3 devices
A4 devices
A5 devices
20
50
G
Gain
100
200
500
V/V
%
A1, A2, A3 devices,
GND + 50 mV ≤ VOUT ≤ VS – 200 mV
0.02
0.02
±0.1
Gain error
A4, A5 devices,
GND + 50 mV ≤ VOUT ≤ VS – 200 mV
±0.15
5
Gain error drift
TA = –40 °C to +125 °C
1.5
0.01
500
ppm/°C
%
Nonlinearity error
Maximum capacitive load
No sustained oscillations, no isolation resistor
pF
VOLTAGE OUTPUT
Swing to VS power supply rail RLOAD = 10 kΩ, TA = –40 °C to +125 °C
VS – 0.07
0.005
VS – 0.2
0.025
V
V
RLOAD = 10 kΩ, VSENSE = 0 V, TA = –40 °C to
Swing to ground
+125 °C
FREQUENCY RESPONSE
A1 devices, CLOAD = 5 pF, VSENSE = 200 mV
A2 devices, CLOAD = 5 pF, VSENSE = 80 mV
A3 devices, CLOAD = 5 pF, VSENSE = 40 mV
A4 devices, CLOAD = 5 pF, VSENSE = 20 mV
A5 devices, CLOAD = 5 pF, VSENSE = 8 mV
1100
1100
900
850
800
2
BW
SR
Bandwidth
kHz
Slew rate
V/µs
µs
VOUT =4 V ± 0.1 V step, output settles to 0.5%
VOUT =4 V ± 0.1 V step, output settles to 1%
9
Settling time
5
NOISE
Ven
Voltage noise density
50
nV/√Hz
POWER SUPPLY
VS
Supply voltage
TA = –40 °C to +125 °C
TA = –40 °C to +125 °C
2.7
20
500
600
V
370
IQ
Quiescent current, INA290
µA
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6.6 Typical Characteristics
All specifications at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V, unless
otherwise noted.
Input Offset Voltage (mV)
Input Offset Voltage (mV)
Figure 6-1. Input Offset Production Distribution, A1
Devices
Figure 6-2. Input Offset Production Distribution, A2
Devices
Input Offset Voltage (mV)
Input Offset Voltage (mV)
Figure 6-3. Input Offset Production Distribution, A3 Figure 6-4. Input Offset Production Distribution, A4
Devices
Devices
8
4
0
G = 20
G = 50
-4
G = 100
G = 200
G = 500
-8
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Input Offset Voltage (mV)
Figure 6-6. Input Offset Voltage vs Temperature
Figure 6-5. Input Offset Production Distribution, A5
Devices
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20
180
160
140
120
100
80
10
0
G = 20
G = 50
60
-10
G = 100
G = 200
G = 500
40
20
-20
10
100
1k 10k
Frequency (Hz)
100k
1M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Figure 6-8. Common-Mode Rejection Ratio vs
Frequency
Figure 6-7. Common-Mode Rejection Ratio vs
Temperature
60
50
40
30
20
0.10
G = 20
G = 50
G = 100
G = 200
G = 500
0.05
0.00
G = 20
G = 50
G = 100
G = 200
G = 500
10
0
-0.05
-10
10
-0.10
100
1k
10k
Frequency (Hz)
100k
1M
10M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
VSENSE = 4 V / Gain
Figure 6-9. Gain vs Frequency
Figure 6-10. Gain Error vs Temperature
75
60
45
30
15
0
160
G = 20
G = 50
G = 100
G = 200
G = 500
140
120
100
80
60
-15
-30
-45
40
20
-75 -50 -25
0
25
50
75 100 125 150 175
10
100
1k 10k
Frequency (Hz)
100k
1M
Temperature (èC)
Figure 6-11. Power-Supply Rejection Ratio vs
Temperature
Figure 6-12. Power-Supply Rejection Ratio vs
Frequency
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25
20
15
10
5
25
20
15
10
5
VS = 2.7 to 20V, VCM = 48V
VS = 2.7 to 20V, VCM = 120V
VS = 2.7 to 5V, VCM = 2.7V
VS = 20V, VCM = 7V
VS = 2.7 to 20V, VCM = 0V
VS = 0V, VCM = 48V
VS = 0V, VCM = 120V
VS = 5V
VS = 20V
VS = 2.7V
VS = 0V
VS = 0 to 20V, VCM = -20V
0
0
-5
-5
-20
0
20
40
Common-Mode Voltage (V)
60
80
100
120
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
VSENSE = 0 V
Figure 6-14. Input Bias Current vs Temperature
Figure 6-13. Input Bias Current vs Common-Mode
Voltage
240
140
IB+
IB-
IB+
120
IB-
200
IB+, VS = 0V
160
IB-, VS = 0V
120
IB+, VS = 0V
IB-, VS = 0V
100
80
60
80
40
40
20
0
0
-40
-80
-120
-160
-20
-40
-60
-80
0
200
400
600
800
1000
0
100
200
VSENSE (mV)
300
400
VSENSE (mV)
Figure 6-15. Input Bias Current vs VSENSE, A1
Devices
Figure 6-16. Input Bias Current vs VSENSE, A2 and
A3 Devices
100
VS
25èC
125èC
-40èC
IB+, G=200
IB+, G=500
IB-
VS - 1
80
IB+, VS = 0V
IB-, VS = 0V
60
VS - 2
40
20
0
GND + 2
GND + 1
GND
-20
0
5
10
15
20
25
Output Current (mA)
30
35
40
0
20
40
60
80
100
VSENSE (mV)
VS = 2.7 V
Figure 6-18. Output Voltage vs Output Current
Figure 6-17. Input Bias Current vs VSENSE, A4 and
A5 Devices
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VS
VS
VS - 1
VS - 2
VS - 3
25èC
125èC
-40èC
25èC
125èC
-40èC
VS - 1
VS - 2
VS - 3
GND + 3
GND + 2
GND + 1
GND
GND + 3
GND + 2
GND + 1
GND
0
5
10
15
Output Current (mA)
20
25
30
35
40
0
5
10
15
Output Current (mA)
20
25
30
35
40
VS = 5 V
VS = 20 V
Figure 6-19. Output Voltage vs Output Current
Figure 6-20. Output Voltage vs Output Current
1000
500
0.00
200
100
50
-0.10
-0.20
-0.30
20
10
5
2
1
0.5
0.2
0.1
0.05
-0.40
VS = 5V
VS = 20V
VS = 2.7V
0.02
0.01
-0.50
10
100
1k
10k
Frequency (Hz)
100k
1M
10M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
RL = 10 kΩ
Figure 6-21. Output Impedance vs Frequency
Figure 6-22. Swing to Supply vs Temperature
0.020
100
VS = 5V
VS = 20V
VS = 2.7V
G = 20
G = 500
80
70
60
0.015
0.010
0.005
0.000
50
40
30
20
10
-75 -50 -25
0
25
50
75 100 125 150 175
10
100
1k 10k
Frequency (Hz)
100k
1M
Temperature (èC)
RL = 10 kΩ
Figure 6-23. Swing to GND vs Temperature
Figure 6-24. Input Referred Noise vs Frequency
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400
375
350
325
300
275
250
225
200
175
VS = 5V
VS = 20V
VS = 2.7V
0
2.5
5
7.5
10
12.5
Output Voltage (V)
15
17.5
20
Time (1 s/div)
Figure 6-25. Input Referred Noise
Figure 6-26. Quiescent Current vs Output Voltage,
INA290
425
400
375
350
325
50
VS = 5V, Sourcing
VS = 5V, Sinking
VS = 20V, Sourcing
VS = 20V, Sinking
VS = 2.7V, Sourcing
VS = 2.7V, Sinking
40
30
20
10
0
VS = 5V
VS = 20V
VS = 2.7V
300
-75 -50 -25
0
25
50
75 100 125 150 175
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Temperature (èC)
Figure 6-27. Quiescent Current vs Temperature,
INA290
Figure 6-28. Short-Circuit Current vs Temperature
425
400
375
350
425
VS = 5V
VS = 20V
VS = 2.7V
400
375
350
325
300
325
25èC
125èC
-40èC
300
-20
0
20
40
60
Common-Mode Voltage (V)
80
100
120
0
2
4
6
8
10
12
Supply Voltage (V)
14
16
18
20
Figure 6-30. Quiescent Current vs Common-Mode
Voltage, INA290
Figure 6-29. Quiescent Current vs Supply Voltage,
INA290
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VCM
VOUT
2.7V
0V
0V
2.5V
Time (12.5ms/div)
RL = 10 kΩ
VSENSE = 5 mV
Time (10 ms/div)
Figure 6-32. Step Response, A3 Devices
Figure 6-31. Common-Mode Voltage Fast Transient
Pulse, A5 DeviceAs
Supply Voltage
Output Voltage
0V
0V
Supply Voltage
Output Voltage
Time (5 ms/div)
Time (25 ms/div)
VSENSE = 0 mV
VSENSE = 5 mV
Figure 6-33. Start-Up Response
Figure 6-34. Supply Transient Response, A5
Devices
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7 Detailed Description
7.1 Overview
The INA290-Q1 is a high-side only current-sense amplifier that offers a wide common-mode range, precision
zero-drift topology, excellent common-mode rejection ratio (CMRR), high bandwidth, and fast slew rate. Different
gain versions are available to optimize the output dynamic range based on the application. The INA290-Q1 is
designed using a transconductance architecture with a current-feedback amplifier that enables low bias currents
of 20 µA and a common-mode voltage of 120 V.
7.2 Functional Block Diagram
VS
VBUS
ISENSE
R1
IN+
+
Current
RSENSE
Bias
Feedback
R1
OUT
œ
INœ
Buffer
Load
RL
GND
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7.3 Feature Description
7.3.1 Amplifier Input Common-Mode Range
The INA290-Q1 supports large input common-mode voltages from 2.7 V to 120 V and features a high DC CMRR
of 160 dB (typical) and a 85-dB AC CMRR at 50 kHz. The minimum common-mode voltage is restricted by the
supply voltage as shown in Figure 7-1. The topology of the internal amplifiers INA290-Q1 restricts operation to
high-side, current-sensing applications.
8
7
6
5
4
3
2
VCM = 2.7V
1
0
0
2.5
5
7.5
10
12.5
Supply Voltage (V)
15
17.5
20
Figure 7-1. Minimum Common-Mode Voltage vs Supply
7.3.1.1 Input-Signal Bandwidth
The INA290-Q1 –3-dB bandwidth is gain dependent with several gain options of 20 V/V, 50 V/V, 100 V/V, 200
V/V, and 500 V/V as shown in Figure 6-8. The unique multistage design enables the amplifier to achieve high
bandwidth at all gains. This high bandwidth provides the throughput and fast response that is required for the
rapid detection and processing of overcurrent events.
The bandwidth of the device also depends on the applied V SENSE voltage. Figure 7-2 shows the bandwidth
performance profile of the device over frequency as output voltage increases for each gain variation. As shown
in Figure 7-2, the device exhibits the highest bandwidth with higher VSENSE voltages, and the bandwidth is higher
with lower device gain options. Individual requirements determine the acceptable limits of error for high-
frequency, current-sensing applications. Testing and evaluation in the end application or circuit is required to
determine the acceptance criteria and validate whether or not the performance levels meet the system
specifications.
1200
1100
1000
900
800
700
600
500
400
300
200
G = 20
G = 50
G = 100
G = 200
G = 500
0
0.5
1
1.5
2
2.5
Output Voltage (V)
3
3.5
4
Figure 7-2. Bandwidth vs Output Voltage
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7.3.1.2 Low Input Bias Current
The INA290-Q1 input bias current draws 20 μA (typical) even with common-mode voltages as high as 120 V.
This enables precision current sensing in applications where the sensed current is small or applications that
require lower input leakage current.
7.3.1.3 Low VSENSE Operation
The INA290-Q1 enables accurate current measurement across the entire valid V SENSE range. The zero-drift
input architecture of the INA290-Q1 provides the low offset voltage and low offset drift needed to measure low
VSENSE levels accurately across the wide operating temperature of –40 °C to +125 °C. The capability to measure
low sense voltages enables accurate measurements at lower load currents, and also allows reduction of the
sense resistor value for a given operating current, which minimizes the power loss in the current sensing
element.
7.3.1.4 Wide Fixed Gain Output
The INA290-Q1 gain error is < 0.1% at room temperature for most gain options, with a maximum drift of 5
ppm/°C over the full temperature range of –40 °C to +125 °C. The INA290-Q1 is available in multiple gain
options of 20 V/V, 50 V/V, 100 V/V, 200 V/V, and 500 V/V, which the system designer should select based on
their desired signal-to-noise ratio and other system requirements.
The INA290-Q1 closed-loop gain is set by a precision, low-drift internal resistor network. The ratio of these
resistors are excellently matched, while the absolute values may vary significantly. TI does not recommend
adding additional resistance around the INA290-Q1 to change the effective gain because of this variation,
however. The typical values of the gain resistors are described in Table 7-1.
Table 7-1. Fixed Gain Resistor
GAIN
R1
RL
20 (V/V)
50 (V/V)
100 (V/V)
200 (V/V)
500 (V/V)
25 kΩ
10 kΩ
10 kΩ
5 kΩ
500 kΩ
500 kΩ
1000 kΩ
1000 kΩ
1000 kΩ
2 kΩ
7.3.1.5 Wide Supply Range
The INA290-Q1 operates with a wide supply range from a 2.7 V to 20 V. The output stage supports a full-scale
output voltage range of up to V . Wide output range can enable very-wide dynamic range current
S
measurements. For a gain of 20 V/V, the maximum differential input acceptable is 1 V.
The offset of the gain of INA290-Q1A1 device is ±25 μV, and the INA290-Q1A1 is capable of measuring a wide
dynamic range of current up to 92 dB.
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7.4 Device Functional Modes
7.4.1 Unidirectional Operation
The INA290-Q1 measures the differential voltage developed by current flowing through a resistor that is
commonly referred to as a current-sensing resistor or a current-shunt resistor. The INA290-Q1 operates in
unidirectional mode only, meaning it only senses current sourced from a power supply to a system load as
shown in Figure 7-3.
5 V
48-V
Supply
ISENSE
R1
IN+
+
Current
Feedback
RSENSE
Bias
R1
œ
OUT
INœ
Buffer
RL
Load
GND
Figure 7-3. Unidirectional Application
The linear range of the output stage is limited to how close the output voltage can approach ground under zero-
input conditions. The zero current output voltage of the INA290-Q1 is very small, with a maximum of GND + 25
mV. Make sure to apply a sense voltage of (25 mV / Gain) or greater to keep the INA290-Q1 output in the linear
region of operation.
7.4.2 High Signal Throughput
With a bandwidth of 1.1 MHz at a gain of 20 V/V and a slew rate of 2 V/µs, the INA290-Q1 is specifically
designed for detecting and protecting applications from fast inrush currents. As shown in Table 7-2, the INA290-
Q1 responds in less than 2 µs for a system measuring a 75-A threshold on a 2-mΩ shunt.
Table 7-2. Response Time
INA290-Q1
PARAMETER
Gain
EQUATION
AT VS = 5 V
20 V/V
100 A
75 A
G
IMAX
Maximum current
IThreshold
RSENSE
VOUT_MAX
VOUT_THR
SR
Threshold current
Current sense resistor value
Output voltage at maximum current
Output voltage at threshold current
Slew rate
2 mΩ
VOUT = IMAX × RSENSE × G
4 V
VOUT_THR = ITHR × RSENSE × G
3 V
2 V/µs
< 2 µs
Output response time
Tresponse = VOUT_THR / SR
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
8.1 Application Information
The INA290-Q1 amplifies the voltage developed across a current-sensing resistor as current flows through the
resistor to the load. The wide input common-mode voltage range and high common-mode rejection of the
INA290-Q1 allows use over a wide range of voltage rails while still maintaining an accurate current
measurement.
8.1.1 RSENSE and Device Gain Selection
The accuracy of any current-sense amplifier is maximized by choosing the current-sense resistor to be as large
as possible. A large sense resistor maximizes the differential input signal for a given amount of current flow and
reduces the error contribution of the offset voltage. However, there are practical limits as to how large the
current-sense resistor can be in a given application because of the resistor size and maximum allowable power
dissipation. Equation 1 gives the maximum value for the current-sense resistor for a given power dissipation
budget:
PDMAX
RSENSE
<
2
IMAX
(1)
where:
•
•
PDMAX is the maximum allowable power dissipation in RSENSE
IMAX is the maximum current that will flow through RSENSE
.
.
An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply
voltage, VS, and device swing-to-rail limitations. To make sure that the current-sense signal is properly passed to
the output, both positive and negative output swing limitations must be examined. Equation 2 provides the
maximum values of RSENSE and GAIN to keep the device from exceeding the positive swing limitation.
IMAX ª RSENSE ª GAIN < VSP
(2)
where:
•
•
•
IMAX is the maximum current that will flow through RSENSE
GAIN is the gain of the current-sense amplifier.
VSP is the positive output swing as specified in the data sheet.
.
To avoid positive output swing limitations when selecting the value of R SENSE, there is always a trade-off
between the value of the sense resistor and the gain of the device under consideration. If the sense resistor
selected for the maximum power dissipation is too large, then it is possible to select a lower-gain device in order
to avoid positive swing limitations.
The negative swing limitation places a limit on how small the sense resistor value can be for a given application.
Equation 3 provides the limit on the minimum value of the sense resistor.
IMIN ª RSENSE ª GAIN > VSN
(3)
where:
•
IMIN is the minimum current that will flow through RSENSE.
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•
•
GAIN is the gain of the current-sense amplifier.
VSN is the negative output swing of the device.
Table 8-1 shows an example of the different results obtained from using five different gain versions of the
INA290-Q1. From the table data, the highest gain device allows a smaller current-shunt resistor and decreased
power dissipation in the element.
Table 8-1. RSENSE Selection and Power Dissipation
RESULTS AT VS = 5 V
PARAMETER(1)
EQUATION
INA290A1Q INA290A2Q INA290A3Q INA290A4Q INA290A5Q
G
Gain
20 V/V
50 V/V
100 V/V
200 V/V
500 V/V
Ideal differential input voltage (Ignores
swing limitation and power supply
variation.)
VSENSE
VSENSE = VOUT / G
250 mV
100 mV
50 mV
25 mV
10 mV
RSENSE
PSENSE
Current sense resistor value
RSENSE = VSENSE / IMAX
25 mΩ
2.5 W
10 mΩ
1 W
5 mΩ
0.5W
2.5 mΩ
0.25 W
1 mΩ
0.1 W
Current-sense resistor power dissipation
RSENSE x IMAX2
(1) Design example with 10-A full-scale current with maximum output voltage set to 5 V.
8.1.2 Input Filtering
Note
Input filters are not required for accurate measurements using the INA290-Q1, and use of filters in this
location is not recommended. If filter components are used on the input of the amplifier, follow the
guidelines in this section to minimize the effects on performance.
Based strictly on user design requirements, external filtering of the current signal may be desired. The initial
location that can be considered for the filter is at the output of the current-sense amplifier. Although placing the
filter at the output satisfies the filtering requirements, this location changes the low output impedance measured
by any circuitry connected to the output voltage pin. The other location for filter placement is at the current-sense
amplifier input pins. This location also satisfies the filtering requirement, but the components must be carefully
selected to minimally impact device performance. Figure 8-1 shows a filter placed at the input pins.
VS
VCM
1
f3dB
=
4ŒRINCIN
ISENSE
RIN
R1
R1
IN+
+
CIN
Current
RSENSE
Bias
Feedback
RIN
OUT
-
INœ
Buffer
Load
RL
GND
Figure 8-1. Filter at Input Pins
External series resistance provides a source of additional measurement error, so keep the value of these series
resistors to 10 Ω or less to reduce loss of accuracy. The internal bias network shown in Figure 8-1 creates a
mismatch in input bias currents (see Figure 6-15, Figure 6-16, and Figure 6-17) when a differential voltage is
applied between the input pins. If additional external series filter resistors are added to the circuit, a mismatch is
created in the voltage drop across the filter resistors. This voltage is a differential error voltage in the shunt
resistor voltage. In addition to the absolute resistor value, mismatch resulting from resistor tolerance can
significantly impact the error because this value is calculated based on the actual measured resistance.
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The measurement error expected from the additional external filter resistors can be calculated using Equation 4,
where the gain error factor is calculated using Equation 5.
Gain Error (%) = 100 x (Gain Error Factor Þ 1)
(4)
The gain error factor, shown in Equation 4, can be calculated to determine the gain error introduced by the
additional external series resistance. Equation 4 calculates the deviation of the shunt voltage, resulting from the
attenuation and imbalance created by the added external filter resistance. Table 8-2 provides the gain error
factor and gain error for several resistor values.
RB × R1
Gain Error Factor =
(RB × R1) + (RB × RIN) + (2 × RIN × R1)
(5)
Where:
•
•
•
RIN is the external filter resistance value.
R1 is the INA290-Q1 input resistance value specified in Table 7-1.
RB in the internal bias resistance, which is 6600 Ω ± 20%.
Table 8-2. Example Gain Error Factor and Gain Error for 10-Ω External Filter Input Resistors
DEVICE (GAIN)
A1 devices (20)
A2 devices (50)
A3 devices (100)
A4 devices (200)
A5 devices (500)
GAIN ERROR FACTOR
GAIN ERROR (%)
0.99658
–0.34185
0.99598
–0.40141
0.99598
–0.40141
0.99499
–0.50051
0.99203
–0.79663
8.2 Typical Application
The INA290-Q1 is a unidirectional, current-sense amplifier capable of measuring currents through a resistive
shunt with shunt common-mode voltages from 2.7 V to 120 V. The circuit configuration for monitoring current in a
high-side pump or motor is shown in Figure 8-2 .
VSUPPLY
INA290-Q1
+
High-side
DC-Link Sensing
M
Figure 8-2. Current Sensing in a Automotive Pump
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8.2.1 Design Requirements
V SUPPLY is set to 5 V, and the common-mode voltage set to 48 V. Table 8-3 lists the design setup for this
application.
Table 8-3. Design Parameters
DESIGN PARAMETERS
INA290-Q1 supply voltage
High-side supply voltage
Maximum sense current (IMAX
Gain option
EXAMPLE VALUE
5 V
48 V
5 A
)
50 V/V
8.2.2 Detailed Design Procedure
The maximum value of the current-sense resistor is calculated based choice of gain, value of the maximum
current the be sensed (IMAX), and the power-supply voltage (VS). When operating at the maximum current, the
output voltage must not exceed the positive output swing specification, VSP. Under the given design parameters,
Equation 6 calculates the maximum value for RSENSE as 19.2 mΩ.
VSP
RSENSE
<
IMAX ìGAIN
(6)
For this design example, a value of 15 mΩ is selected because, while the 15 mΩ is less than the maximum value
calculated, 15 mΩ is still large enough to give adequate signal at the current-sense amplifier output.
8.2.2.1 Overload Recovery With Negative VSENSE
The INA290-Q1 is a unidirectional current-sense amplifier that is meant to operate with a positive differential
input voltage (VSENSE). If negative VSENSE is applied, the device is placed in an overload condition and requires
time to recover once VSENSE returns positive. The required overload recovery time increases with more negative
VSENSE
.
8.2.3 Application Curve
Figure 8-3 shows the output response of the device to a high frequency sinusoidal current.
VSENSE (20 mV/div)
INA290A2 VOUT (1 V/div)
Time (10ms/div)
Figure 8-3. INA290-Q1 Output Response
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9 Power Supply Recommendations
The input circuitry of the INA290-Q1 device can accurately measure beyond the power-supply voltage. The
power supply can be 20 V, whereas the load power-supply voltage at IN+ and IN– can go up to 120 V. The
output voltage range of the OUT pin is limited by the voltage on the VS pin and the device swing to supply
specification.
10 Layout
10.1 Layout Guidelines
TI always recommends to follow good layout practices:
•
Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing
of the current-sensing resistor commonly results in additional resistance present between the input pins.
Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can
cause significant measurement errors.
•
•
Place the power-supply bypass capacitor as close to the device power supply and ground pins as possible.
The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added
to compensate for noisy or high-impedance power supplies.
When routing the connections from the current-sense resistor to the device, keep the trace lengths as short
as possible.
10.2 Layout Example
Load
RSENSE
TI Device
Current Sense
Output
1
2
3
5
INœ
OUT
GND
VS
Direction of
Current Flow
Power Supply, VS
(2.7 V to 20 V)
4 IN+
CBYPASS
VIA to Ground
Plane
Bus Voltage
Figure 10-1. Recommended Layout for INA290-Q1
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation, see the following:
Texas Instruments, INA290EVM User's Guide
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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16-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
INA290A1QDCKRQ1
INA290A2QDCKRQ1
INA290A3QDCKRQ1
INA290A4QDCKRQ1
INA290A5QDCKRQ1
PINA290A1QDCKRQ1
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
SC70
SC70
SC70
SC70
SC70
SC70
DCK
DCK
DCK
DCK
DCK
DCK
5
5
5
5
5
5
3000 RoHS & Green
3000 RoHS & Green
3000 RoHS & Green
3000 RoHS & Green
3000 RoHS & Green
NIPDAU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Call TI
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
1G6
1G8
1G7
1G9
1GA
NIPDAU
NIPDAU
NIPDAU
NIPDAU
Call TI
3000 RoHS (In work)
& Non-Green
PINA290A2QDCKRQ1
PINA290A3QDCKRQ1
PINA290A4QDCKRQ1
PINA290A5QDCKRQ1
ACTIVE
ACTIVE
ACTIVE
ACTIVE
SC70
SC70
SC70
SC70
DCK
DCK
DCK
DCK
5
5
5
5
3000 RoHS (In work)
& Non-Green
Call TI
Call TI
Call TI
Call TI
Call TI
Call TI
Call TI
Call TI
-40 to 125
-40 to 125
-40 to 125
-40 to 125
3000 RoHS (In work)
& Non-Green
3000 RoHS (In work)
& Non-Green
3000 RoHS (In work)
& Non-Green
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
16-Dec-2020
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF INA290-Q1 :
Catalog: INA290
•
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
•
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Dec-2020
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA290A1QDCKRQ1
INA290A2QDCKRQ1
INA290A3QDCKRQ1
INA290A4QDCKRQ1
INA290A5QDCKRQ1
SC70
SC70
SC70
SC70
SC70
DCK
DCK
DCK
DCK
DCK
5
5
5
5
5
3000
3000
3000
3000
3000
180.0
180.0
180.0
180.0
180.0
8.4
8.4
8.4
8.4
8.4
2.47
2.47
2.47
2.47
2.47
2.3
2.3
2.3
2.3
2.3
1.25
1.25
1.25
1.25
1.25
4.0
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
8.0
Q3
Q3
Q3
Q3
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Dec-2020
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
INA290A1QDCKRQ1
INA290A2QDCKRQ1
INA290A3QDCKRQ1
INA290A4QDCKRQ1
INA290A5QDCKRQ1
SC70
SC70
SC70
SC70
SC70
DCK
DCK
DCK
DCK
DCK
5
5
5
5
5
3000
3000
3000
3000
3000
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
20.0
20.0
20.0
20.0
20.0
Pack Materials-Page 2
IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you
permission to use these resources only for development of an application that uses the TI products described in the resource. Other
reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third
party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims,
damages, costs, losses, and liabilities arising out of your use of these resources.
TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on
ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable
warranties or warranty disclaimers for TI products.
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2020, Texas Instruments Incorporated
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