INA293A1IDBVR [TI]
-4V 至 110V、1.3MHz 超精密电流感应放大器 | DBV | 5 | -40 to 125;型号: | INA293A1IDBVR |
厂家: | TEXAS INSTRUMENTS |
描述: | -4V 至 110V、1.3MHz 超精密电流感应放大器 | DBV | 5 | -40 to 125 放大器 |
文件: | 总31页 (文件大小:1651K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INA293
ZHCSKJ8B –DECEMBER 2019 –REVISED AUGUST 2022
INA293 –4V 至110V、1.3MHz 超精密电流检测放大器
1 特性
3 说明
• 宽共模电压:
INA293 是一款超精密电流检测放大器,可在 –4V 至
110V 的宽共模范围内测量分流电阻器上的压降。负共
模电压允许器件的工作电压低于接地电压,从而可在半
桥应用中精确测量再循环电流。低失调电压、小增益误
差和高直流 CMRR 的组合可实现高精度的电流测量。
INA293 不仅适用于直流电流测量,还适用于高速应用
(例如快速过流保护),此类应用具有1.3MHz 的高带
宽和85dB 交流CMRR(50kHz 时)。
– 工作电压:-4 V 至+110 V
– 可承受电压:-20 V 至+120 V
• 出色的共模抑制比(CMRR):
– 160dB 直流CMRR
– 85dB 交流CMRR(50kHz 时)
• 精度:
– 增益:
INA293 由 2.7V 至 20V 的单电源供电,电源电流为
1.5mA。INA293 提供五个增益选项:20V/V、50V/V、
100V/V、200V/V 和 500V/V。这些增益选项可以满足
宽动态范围电流检测应用。
• 增益误差:±0.15%(最大值)
• 增益漂移:±10ppm/°C(最大值)
– 失调电压:
• 失调电压:±15µV(典型值)
• 温漂:±0.05µV/°C(典型值)
• 可用增益:
INA293 的额定工作温度范围为 -40 °C 至+125 °C,并
且采用节省空间且配备两种引脚型号的SOT-23 封装。
– INA293A1、INA293B1:20V/V
– INA293A2、INA293B2:50V/V
– INA293A3、INA293B3:100V/V
– INA293A4、INA293B4:200V/V
– INA293A5、INA293B5:500V/V
• 高带宽:1.3 MHz
器件信息(1)
封装尺寸(标称值)
器件型号
INA293
封装
SOT-23 (5)
2.90mm × 1.60mm
(1) 如需了解所有可用封装,请参阅数据表末尾的封装选项附录。
VS
VCM
• 压摆率:2.5 V/µs
• 静态电流:1.5mA
ISENSE
R1
2 应用
IN+
+
Current
RSENSE
Bias
• 有源天线系统mMIMO (AAS)
• 宏远程无线电单元(RRU)
• 48V 机架式服务器
Feedback
R1
OUT
-
INœ
Buffer
Load
RL
• 48V 商用网络和服务器电源(PSU)
• 48V 电池管理系统(BMS)
GND
功能方框图
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SBOS470
INA293
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ZHCSKJ8B –DECEMBER 2019 –REVISED AUGUST 2022
Table of Contents
7.4 Device Functional Modes..........................................15
8 Application and Implementation..................................16
8.1 Application Information............................................. 16
8.2 Typical Application.................................................... 18
8.3 Power Supply Recommendations.............................19
8.4 Layout....................................................................... 19
9 Device and Documentation Support............................21
9.1 Documentation Support............................................ 21
9.2 接收文档更新通知..................................................... 21
9.3 支持资源....................................................................21
9.4 Trademarks...............................................................21
9.5 Electrostatic Discharge Caution................................21
9.6 术语表....................................................................... 21
10 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings ....................................... 4
6.2 ESD Ratings .............................................................. 4
6.3 Recommended Operating Conditions ........................5
6.4 Thermal Information ...................................................5
6.5 Electrical Characteristics ............................................5
6.6 Typical Characteristics................................................7
7 Detailed Description......................................................13
7.1 Overview...................................................................13
7.2 Functional Block Diagram.........................................13
7.3 Feature Description...................................................13
Information.................................................................... 21
4 Revision History
Changes from Revision A (June 2021) to Revision B (August 2022)
Page
• Changed 方程式5 ........................................................................................................................................... 17
• Moved the Power Supply Recommendations and Layout sections to the Application and Implementation
section.............................................................................................................................................................. 19
Changes from Revision * (December 2019) to Revision A (June 2021)
Page
• 将数据表标题从“INA293 –4V 至110V 1MHz 高精度电流检测放大器”更改为INA293 –4-V 至110-V、1.3-
MHz、高精密电流感测放大器.............................................................................................................................1
• 更新了整个文档中的表格、图和交叉参考的编号格式.........................................................................................1
• 在说明部分中将“高精度”更改为“超精密”...................................................................................................1
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5 Pin Configuration and Functions
OUT
GND
IN+
1
2
3
5
Vs
OUT
GND
Vs
1
2
3
5
INœ
4
INœ
4
IN+
Not to scale
Not to scale
图5-1. INA293A: DBV Package 5-Pin SOT-23 Top
图5-2. INA293B: DBV Package 5-Pin SOT-23 Top
View
View
表5-1. Pin Functions
PIN
TYPE
DESCRIPTION
NAME
GND
OUT
Vs
INA293A
INA293B
2
1
5
3
4
2
1
3
4
5
Ground Ground
Output Output voltage
Power Power supply
IN+
Input
Input
Shunt resistor positive sense input
Shunt resistor negative sense input
IN–
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
Supply Voltage
(Vs)
22
V
–0.3
6
12
Differential (VIN+) –(VIN–), INA293A5, INA293B5
–6
–12
Analog Inputs,
VIN+, VIN–
V
Differential (VIN+) –(VIN–), All others
(2)
Common - mode
Output
120
–20
Vs + 0.3
150
V
GND –0.3
–55
TA
Operating temperature
Junction temperature
Storage temperature
°C
°C
°C
TJ
150
Tstg
150
–65
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) VIN+ and VIN–are the voltages at the IN+ and IN–pins, respectively.
6.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001, all pins(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC
specification JESD22-C101, all pins(2)
±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
–4
2.7
NOM
48
MAX
110
UNIT
V
VCM
VS
Common-mode input range
Operating supply range
Differential sense input range
Ambient temperature
5
20
V
VSENSE
TA
0
VS / G
125
V
°C
–40
6.4 Thermal Information
INA293
THERMAL METRIC(1)
DBV (SOT-23)
5 PINS
184.7
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
105.6
47.2
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
21.5
ΨJT
46.9
ΨJB
RθJC(bot)
N/A
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
at TA = 25 °C, VS = 5 V, VSENSE = VIN+ - VIN- = 0.5 V / Gain, VCM = VIN- = 48 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
VCM
Common-mode input range(1)
TA = -40°C to +125°C
110
V
–4
-4 V ≤VCM ≤110 V, TA = -40°C to
+125°C
140
160
dB
dB
Common-mode rejection ratio, input
referred
CMRR
f = 50 kHz
INA293x1
INA293x2
INA293x3
INA293x4
INA293x5
85
±30
±15
±10
±5
±150
±80
±50
±30
±20
Vos
Offset voltage, input referred
µV
±2
TA = -40℃to +125℃, INA293x1,
INA293x2, INA293x3
±0.05
±0.025
±1
±0.5
±0.25
±8
dVos/dT Offset voltage drift
µV/℃
µV/V
TA = -40℃to +125℃, INA293x4,
INA293x5
INA293x1, 2.7 V ≤VS ≤20 V,
TA = -40°C to +125°C
Power supply rejection ratio, input
INA293x2, INA293x3, 2.7 V ≤VS ≤20
V, TA = -40°C to +125°C
PSRR
±0.3
±3
referred
INA293x4, INA293x5, 2.7 V ≤VS ≤20
V, TA = -40°C to +125°C
±0.1
±1
IB+, VSENSE = 0 V
IB-, VSENSE = 0 V
10
10
20
20
30
30
uA
uA
IB
Input bias current
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6.5 Electrical Characteristics (continued)
at TA = 25 °C, VS = 5 V, VSENSE = VIN+ - VIN- = 0.5 V / Gain, VCM = VIN- = 48 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OUTPUT
INA293x1
INA293x2
INA293x3
INA293x4
INA293x5
20
50
V/V
V/V
V/V
V/V
V/V
%
G
Gain
100
200
500
±0.02
±1
±0.15
GND + 50 mV ≤VOUT ≤VS –200 mV
GERR
Gain error
TA = -40°C to +125°C
±10 ppm/°C
%
NLERR
Nonlinearity error
0.01
No sustained oscillations, no isolation
resistor
Maximum capacitive load
500
pF
VOLTAGE OUTPUT
Swing to Vs (Power supply rail)
Vs –
0.07
Vs –
0.15
V
V
RLOAD = 10 kΩ, TA = -40°C to +125°C
RLOAD = 10 kΩ, VSENSE = 0 V, TA = -40°C
to +125°C
Swing to ground
0.005
0.02
FREQUENCY RESPONSE
INA293x1, CLOAD = 5 pF,
VSENSE = 200 mV
1300
1300
1000
900
INA293x2, CLOAD = 5 pF,
VSENSE = 80 mV
INA293x3, CLOAD = 5 pF,
VSENSE = 40 mV
BW
SR
Bandwidth
kHz
INA293x4, CLOAD = 5 pF,
VSENSE = 20 mV
INA293x5, CLOAD = 5 pF,
VSENSE = 8 mV
900
2.5
10
Slew rate
Rising edge
V/µs
µs
VOUT = 4 V ± 0.1 V step, Output settles to
0.5%
VOUT = 4 V ± 0.1 V step, Output settles to
1%
Settling time
5
1
VOUT = 4 V ± 0.1 V step, Output settles to
5%
NOISE
Ven
Voltage noise density
50
nV/√Hz
POWER SUPPLY
Vs
Supply voltage
2.7
20
2
V
TA = –40°C to +125°C
1.5
mA
mA
IQ
Quiescent current
TA = -40°C to +125°C
2.25
(1) Common-mode voltage at both VIN+ and VIN- must not exceed the specified common-mode input range.
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6.6 Typical Characteristics
All specifications at TA = 25 °C, VS = 5 V, VSENSE = VIN+ –VIN- = 0.5 V / Gain, VCM = VIN– = 48 V, unless otherwise noted.
Input Offset Voltage (mV)
Input Offset Voltage (mV)
图6-2. INA293x2 Input Offset Production Distribution
图6-1. INA293x1 Input Offset Production Distribution
Input Offset Voltage (mV)
Input Offset Voltage (mV)
图6-3. INA293x3 Input Offset Production Distribution
图6-4. INA293x4 Input Offset Production Distribution
16
8
0
G = 20
G = 50
-8
G = 100
G = 200
G = 500
-16
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Input Offset Voltage (mV)
图6-6. Input Offset Voltage vs Temperature
图6-5. INA293x5 Input Offset Production Distribution
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6.6 Typical Characteristics (continued)
All specifications at TA = 25 °C, VS = 5 V, VSENSE = VIN+ –VIN- = 0.5 V / Gain, VCM = VIN– = 48 V, unless otherwise noted.
20
10
0
180
160
140
120
100
80
G = 20
G = 50
60
-10
G = 100
G = 200
G = 500
40
20
-20
10
100
1k 10k
Frequency (Hz)
100k
1M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
图6-8. Common-Mode Rejection Ratio vs Frequency
图6-7. Common-Mode Rejection Ratio vs Temperature
60
0.10
G = 20
G = 50
G = 100
G = 200
G = 500
50
40
30
20
0.05
0.00
G = 20
G = 50
G = 100
G = 200
G = 500
10
0
-0.05
-10
-0.10
10
100
1k
10k
Frequency (Hz)
100k
1M
10M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
图6-9. Gain vs Frequency
图6-10. Gain Error vs Temperature
1.0
0.8
140
120
100
80
0.6
0.4
0.2
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
60
G = 20
G = 50
G = 100
G = 200
G = 500
40
20
10
100
1k 10k
Frequency (Hz)
100k
1M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
图6-12. Power-Supply Rejection Ratio vs Frequency
图6-11. Power-Supply Rejection Ratio vs Temperature
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6.6 Typical Characteristics (continued)
All specifications at TA = 25 °C, VS = 5 V, VSENSE = VIN+ –VIN- = 0.5 V / Gain, VCM = VIN– = 48 V, unless otherwise noted.
25
20
15
10
5
25
20
15
10
5
VS = 2.7 to 20V, VCM = 48V
VS = 2.7 to 20V, VCM = 120V
VS = 2.7 to 20V, VCM = -4V
VS = 0V, VCM = 120V
VS = 5V
VS = 20V
VS = 2.7V
VS = 0V
VS = 0V, VCM = -4V
0
0
VS = 0V and 20V, VCM = -20V
-5
-5
-10
-10
-20
0
20
40
60
Common-Mode Voltage (V)
80
100
120
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
图6-14. Input Bias Current vs Temperature
VSENSE = 0 V
图6-13. Input Bias Current vs Common-Mode Voltage
240
140
120
100
80
IB+
IB-
IB+
IB-
200
IB+, VS = 0V
160
IB-, VS = 0V
120
IB+, VS = 0V
IB-, VS = 0V
60
80
40
40
20
0
0
-40
-80
-120
-160
-20
-40
-60
-80
0
200
400
VSENSE (mV)
600
800
1000
0
100
200
VSENSE (mV)
300
400
图6-15. INA293x1 Input Bias Current vs VSENSE
图6-16. INA293x2, INA293x3 Input Bias Current vs VSENSE
100
80
60
40
20
0
VS
IB+, G=200
IB+, G=500
IB-
IB+, VS = 0V
IB-, VS = 0V
25èC
125èC
-40èC
VS - 1
VS - 2
GND + 2
GND + 1
GND
-20
0
20
40
60
80
100
0
5
10
15
20
25
Output Current (mA)
30
35
40
VSENSE (mV)
图6-17. INA293x4, INA293x5 Input Bias Current vs VSENSE
VS = 2.7 V
图6-18. Output Voltage vs Output Current
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6.6 Typical Characteristics (continued)
All specifications at TA = 25 °C, VS = 5 V, VSENSE = VIN+ –VIN- = 0.5 V / Gain, VCM = VIN– = 48 V, unless otherwise noted.
VS
VS - 1
VS - 2
VS - 3
VS
VS - 1
VS - 2
VS - 3
25èC
125èC
-40èC
25èC
125èC
-40èC
GND + 3
GND + 2
GND + 1
GND
GND + 3
GND + 2
GND + 1
GND
0
5
10
15
Output Current (mA)
20
25
30
35
40
0
5
10
15
Output Current (mA)
20
25
30
35
40
VS = 5 V
VS = 20 V
图6-19. Output Voltage vs Output Current
图6-20. Output Voltage vs Output Current
1000
500
0.00
-0.10
-0.20
-0.30
-0.40
-0.50
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
VS = 5V
VS = 20V
VS = 2.7V
0.02
0.01
10
100
1k
10k
Frequency (Hz)
100k
1M
10M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
图6-21. Output Impedance vs Frequency
图6-22. Swing to Supply vs Temperature
0.020
0.015
0.010
0.005
0.000
100
VS = 5V
VS = 20V
VS = 2.7V
G = 20
G = 500
80
70
60
50
40
30
20
10
10
100
1k 10k
Frequency (Hz)
100k
1M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
图6-24. Input Referred Noise vs Frequency
图6-23. Swing to GND vs Temperature
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6.6 Typical Characteristics (continued)
All specifications at TA = 25 °C, VS = 5 V, VSENSE = VIN+ –VIN- = 0.5 V / Gain, VCM = VIN– = 48 V, unless otherwise noted.
2
1.8
1.6
VS = 20V
1.4
VS = 5V
1.2
1
G = 20 to 50
VS = 2.7V
G = 100 to 500
0.8
0
2.5
5
7.5
10
12.5
Output Voltage (V)
15
17.5
20
Time (1 s/div)
图6-25. Input Referred Noise
图6-26. Quiescent Current vs Output Voltage
2
1.8
1.6
1.4
1.2
1
50
40
30
20
10
0
VS = 5V
VS = 20V
VS = 2.7V
VS = 5V, Sourcing
VS = 5V, Sinking
VS = 20V, Sourcing
VS = 20V, Sinking
VS = 2.7V, Sourcing
VS = 2.7V, Sinking
0.8
-75 -50 -25
0
25
50
75 100 125 150 175
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Temperature (èC)
图6-27. Quiescent Current vs Temperature
图6-28. Short-Circuit Current vs Temperature
2
2
1.8
1.6
1.4
1.2
1
VS = 5V
VS = 20V
VS = 2.7V
1.8
1.6
1.4
1.2
1
25èC
125èC
-40èC
0.8
0.8
0
2
4
6
8
Supply Voltage (V)
10
12
14
16
18
20
-20
0
20
40
Common-Mode Voltage (V)
60
80
100
120
图6-29. Quiescent Current vs Supply Voltage
图6-30. Quiescent Current vs Common-Mode Voltage
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6.6 Typical Characteristics (continued)
All specifications at TA = 25 °C, VS = 5 V, VSENSE = VIN+ –VIN- = 0.5 V / Gain, VCM = VIN– = 48 V, unless otherwise noted.
VCM
VOUT
0V
0V
0V
0V
Time (10 ms/div)
Time (12.5ms/div)
图6-32. INA293x3 Step Response
图6-31. Common-Mode Voltage Fast Transient Pulse
Supply Voltage
Output Voltage
Supply Voltage
Output Voltage
0V
0V
Time (5 ms/div)
Time (50 ms/div)
图6-34. Supply Transient Response
图6-33. Start-Up Response
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7 Detailed Description
7.1 Overview
The INA293 is a high- or low-side current-sense amplifier that offers a wide common-mode range, precision
zero-drift topology, excellent common-mode rejection ratio (CMRR), high bandwidth and fast slew rate. Different
gain versions are available to optimize the output dynamic range based on the application. The INA293 is
designed using a transconductance architecture with a current-feedback amplifier that enables low bias currents
of 20 μA with a common-mode voltage of 110 V.
7.2 Functional Block Diagram
VS
Load
Supply
ISENSE
R1
IN+
+
Current
RSENSE
Bias
Feedback
R1
OUT
-
INœ
Buffer
Load
RL
GND
7.3 Feature Description
7.3.1 Amplifier Input Common-Mode Signal
The INA293 supports large input common-mode voltages from –4 V to +110 V. Because of the internal
topology, the common-mode range is not restricted by the power-supply voltage (VS). This allows for the INA293
to be used for both low and high side current-sensing applications.
7.3.1.1 Input-Signal Bandwidth
The INA293 –3-dB bandwidth is gain dependent, with several gain options of 20 V/V, 50 V/V, 100 V/V, 200 V/V,
and 500 V/V. The unique multistage design enables the amplifier to achieve high bandwidth at all gains. This
high bandwidth provides the throughput and fast response that is required for the rapid detection and processing
of overcurrent events.
The bandwidth of the device also depends on the applied VSENSE voltage. 图 7-1 shows the bandwidth
performance profile of the device over frequency as output voltage increases for each gain variation. As shown
in 图 7-1, the device exhibits the highest bandwidth with higher VSENSE voltages, and the bandwidth is higher
with lower device gain options. Individual requirements determine the acceptable limits of error for high
frequency current-sensing applications. Testing and evaluation in the end application or circuit is required to
determine the acceptance criteria, and to validate that the performance levels meet the system specifications.
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1400
1200
1000
800
600
INA293A1
INA293A2
INA293A3
INA293A4
INA293A5
400
200
0
1
2
3
Output Voltage (V)
图7-1. Bandwidth vs Output Voltage
7.3.1.2 Low Input Bias Current
The INA293 inputs draw a 20-µA (typical) bias current at a common-mode voltage as high as 110 V, which
enables precision current sensing on applications that require lower current leakage.
7.3.1.3 Low VSENSE Operation
The INA293 operates with high performance across the entire valid VSENSE range. The zero-drift input
architecture of the INA293 provides the low offset voltage and low offset drift needed to measure low VSENSE
levels accurately across the wide operating temperature of –40 °C to +125 °C. Low VSENSE operation is
particularly beneficial when using low ohmic shunts for low current measurements, as power losses across the
shunt are significantly reduced.
7.3.1.4 Wide Fixed Gain Output
The INA293 gain error is < 0.15% at room temperature, with a maximum drift of 10 ppm/°C over the full
temperature range of –40°C to +125°C. The INA293 is available in multiple gain options of 20 V/V, 50 V/V, 100
V/V, 200 V/V, and 500 V/V, which the system designer should select based on their desired signal-to-noise ratio
and other system requirements.
The INA293 closed-loop gain is set by a precision, low drift internal resistor network. The ratio of these resistors
are excellently matched, while the absolute values may vary significantly. Adding additional resistance around
the INA293 to change the effective gain is not recommended, however, because of this variation. The typical
values of the gain resistors are described in 表7-1.
表7-1. Fixed Gain Resistor
GAIN
R1
RL
20 (V/V)
50 (V/V)
100 (V/V)
200 (V/V)
500 (V/V)
25 kΩ
10 kΩ
10 kΩ
5 kΩ
500 kΩ
500 kΩ
1000 kΩ
1000 kΩ
1000 kΩ
2 kΩ
7.3.1.5 Wide Supply Range
The INA293 operates with a wide supply range from 2.7 V to 20 V. The output stage supports a wide output
range while INA293x1 (gain of 20 V/V) at a supply voltage of 20 V allows a maximum acceptable differential
input of 1 V. When paired with the small input offset voltage of the INA293, systems with very wide dynamic
range of current measurement can be supported.
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7.4 Device Functional Modes
7.4.1 Unidirectional Operation
The INA293 measures the differential voltage developed by current flowing through a resistor, commonly
referred to as a current-sensing resistor or a current-shunt resistor. The INA293 operates in unidirectional mode
only, meaning it only senses current sourced from a power supply to a system load as shown in 图7-2.
5 V
48-V
Supply
ISENSE
R1
IN+
+
Current
Feedback
RSENSE
Bias
R1
OUT
-
INœ
Buffer
RL
Load
GND
图7-2. Unidirectional Application
The linear range of the output stage is limited to how close the output voltage can approach ground under zero-
input conditions. The zero current output voltage of the INA293 is very small, with a maximum of GND + 20 mV.
Make sure to apply a differential input voltage of (20 mV / Gain) or greater to keep the INA293 output in the
linear region of operation.
7.4.2 High Signal Throughput
With a bandwidth of 1.3 MHz at a gain of 20 V/V and a slew rate of 2.5 V/µs, the INA293 is specifically designed
for detecting and protecting applications from fast inrush currents. As shown in 表 7-2, the INA293 responds in
less than 2 µs for a system measuring a 75-A threshold on a 2-mΩshunt.
表7-2. Response Time
INA293
PARAMETER
Gain
EQUATION
AT VS = 5 V
20 V/V
100 A
75 A
G
IMAX
Maximum current
IThreshold
RSENSE
VOUT_MAX
VOUT_THR
SR
Threshold current
Current sense resistor value
Output voltage at maximum current
Output voltage at threshold current
Slew rate
2 mΩ
4 V
VOUT_MAX = IMAX × RSENSE × G
VOUT_THR = ITHR × RSENSE × G
3 V
2.5 V/µs
< 2 µs
Output response time
Tresponse= VOUT_THR / SR
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8 Application and Implementation
备注
以下应用部分中的信息不属于TI 器件规格的范围,TI 不担保其准确性和完整性。TI 的客 户应负责确定
器件是否适用于其应用。客户应验证并测试其设计,以确保系统功能。
8.1 Application Information
The INA293 amplifies the voltage developed across a current-sensing resistor as current flows through the
resistor to the load. The wide input common-mode voltage range and high common-mode rejection of the
INA293 make it usable over a wide range of voltage rails while still maintaining an accurate current
measurement.
8.1.1 RSENSE and Device Gain Selection
The accuracy of any current-sense amplifier is maximized by choosing the current-sense resistor to be as large
as possible. A large sense resistor maximizes the differential input signal for a given amount of current flow and
reduces the error contribution of the offset voltage. However, there are practical limits as to how large the
current-sense resistor can be in a given application because of the resistor size and maximum allowable power
dissipation. 方程式 1 gives the maximum value for the current-sense resistor for a given power dissipation
budget:
PDMAX
RSENSE
<
2
IMAX
(1)
where:
• PDMAX is the maximum allowable power dissipation in RSENSE
• IMAX is the maximum current that will flow through RSENSE
.
.
An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply
voltage, VS, and device swing-to-rail limitations. To make sure that the current-sense signal is properly passed to
the output, both positive and negative output swing limitations must be examined. 方程式 2 provides the
maximum values of RSENSE and GAIN to keep the device from exceeding the positive swing limitation.
IMAX ª RSENSE ª GAIN < VSP
(2)
where:
• IMAX is the maximum current that will flow through RSENSE
• GAIN is the gain of the current-sense amplifier.
.
• VSP is the positive output swing as specified in the data sheet.
To avoid positive output swing limitations when selecting the value of RSENSE, there is always a trade-off
between the value of the sense resistor and the gain of the device under consideration. If the sense resistor
selected for the maximum power dissipation is too large, then it is possible to select a lower-gain device in order
to avoid positive swing limitations.
The negative swing limitation places a limit on how small the sense resistor value can be for a given application.
方程式3 provides the limit on the minimum value of the sense resistor.
IMIN ª RSENSE ª GAIN > VSN
(3)
where:
• IMIN is the minimum current that will flow through RSENSE
• GAIN is the gain of the current-sense amplifier.
.
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• VSN is the negative output swing of the device.
表 8-1 shows an example of the different results obtained from using five different gain versions of the INA293.
From the table data, the highest gain device allows a smaller current-shunt resistor and decreased power
dissipation in the element.
表8-1. RSENSE Selection and Power Dissipation(1)
RESULTS AT VS = 5 V
PARAMETER
EQUATION
A1, B1
A2, B2
A3, B3
A4, B4
A5, B5
DEVICES
DEVICES
DEVICES
DEVICES
DEVICES
G
Gain
20 V/V
250 mV
25 mΩ
2.5 W
50 V/V
100 mV
10 mΩ
1 W
100 V/V
50 mV
5 mΩ
0.5W
200 V/V
25 mV
500 V/V
10 mV
1 mΩ
0.1 W
VDIFF
RSENSE
PSENSE
Ideal differential input voltage
VDIFF = VOUT / G
Current sense resistor value
RSENSE = VDIFF / IMAX
2.5 mΩ
0.25 W
Current-sense resistor power dissipation
RSENSE × IMAX2
(1) Design example with 10-A full-scale current with maximum output voltage set to 5 V.
8.1.2 Input Filtering
备注
Input filters are not required for accurate measurements using the INA293, and use of filters in this
location is not recommended. If filter components are used on the input of the amplifier, follow the
guidelines in this section to minimize the effects on performance.
Based strictly on user design requirements, external filtering of the current signal may be desired. The initial
location that can be considered for the filter is at the output of the current sense amplifier. Although placing the
filter at the output satisfies the filtering requirements, this location changes the low output impedance measured
by any circuitry connected to the output voltage pin. The other location for filter placement is at the current sense
amplifier input pins. This location satisfies the filtering requirement also, however the components must be
carefully selected to minimally impact device performance. 图8-1 shows a filter placed at the input pins.
VS
VCM
ISENSE
RIN
R1
R1
IN+
+
CIN
Current
RSENSE
Bias
Feedback
RIN
OUT
-
INœ
Buffer
Load
RL
GND
图8-1. Filter at Input Pins
External series resistance provides a source of additional measurement error, so keep the value of these series
resistors to 10 Ω or less to reduce loss of accuracy. The internal bias network shown in 图 8-1 creates a
mismatch in input bias currents (see 图6-15, 图6-16 and 图6-17) when a differential voltage is applied between
the input pins. If additional external series filter resistors are added to the circuit, a mismatch is created in the
voltage drop across the filter resistors. This voltage is a differential error voltage in the shunt resistor voltage. In
addition to the absolute resistor value, mismatch resulting from resistor tolerance can significantly impact the
error because this value is calculated based on the actual measured resistance.
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The measurement error expected from the additional external filter resistors can be calculated using 方程式 4,
where the gain error factor is calculated using 方程式5.
Gain Error (%) = 100 - (100 ´ Gain Error Factor)
(4)
The gain error factor, shown in 方程式 4, can be calculated to determine the gain error introduced by the
additional external series resistance. 方程式 4 calculates the deviation of the shunt voltage, resulting from the
attenuation and imbalance created by the added external filter resistance. 表 8-2 provides the gain error factor
and gain error for several resistor values.
RB × R1
Gain Error Factor =
(RB × R1) + (RB × RIN) + (2 × RIN × R1)
(5)
Where:
• RIN is the external filter resistance value.
• R1 is the INA293 input resistance value specified in 表7-1.
• RB in the internal bias resistance, which is 6600 Ω± 20%.
表8-2. Example Gain Error Factor and Gain Error for 10-ΩExternal Filter Input Resistors
DEVICE (GAIN)
INA293x1 (20)
INA293x2 (50)
INA293x3 (100)
INA293x4 (200)
INA293x5 (500)
GAIN ERROR FACTOR
GAIN ERROR (%)
-0.289161432
-0.348779273
-0.348779273
-0.447984072
-0.744416873
0.997108386
0.996512207
0.996512207
0.995520159
0.992555831
8.2 Typical Application
The INA293 is a unidirectional, current-sense amplifier capable of measuring currents through a resistive shunt
with shunt common-mode voltages from –4 V to +110 V.
24 V
Solenoid
RSENSE
ISENSE
MCU
+
œ
ADC
INA
5 V
GND
图8-2. Current Sensing in a Solenoid Application
8.2.1 Design Requirements
In this example application, the common-mode voltage ranges from 0 V to 24 V. The maximum sense current is
1.5 A, and a 5-V supply is available for the INA293. Following the design guidelines from the RSENSE and Device
Gain Selection section, a RSENSE of 50 mΩ and a gain of 50 V/V are selected to provide good output dynamic
range. 表8-3 lists the design setup for this application.
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表8-3. Design Parameters
DESIGN PARAMETERS
EXAMPLE VALUE
Power supply voltage
Common-mode voltage range
Maximum sense current
RSENSE resistor
5 V
0 V to 24 V
1.5 A
50 mΩ
Gain option
50 V/V
8.2.2 Detailed Design Procedure
The INA293 is designed to measure current in a typical solenoid application. The INA293 measures current
across the 50-mΩ shunt that is placed at the output of the half-bridge. The INA293 measures the differential
voltage across the shunt resistor, and the signal is internally amplified with a gain of 50 V/V. The output of the
INA293 is connected to the analog-to-digital converter (ADC) of an MCU to digitize the current measurements.
Solenoid loads are highly inductive and are often prone to failure. Solenoids are often used for position control,
precise fluid control, and fluid regulation. Measuring real-time current on the solenoid continuously can indicate
premature failure of the solenoid which can lead to a faulty control loop in the system. Measuring high-side
current also indicates if there are any ground faults on the solenoid or the FETs that can be damaged in an
application. The INA293, with high bandwidth and slew rate, can be used to detect fast overcurrent conditions to
prevent the solenoid damage from short-to-ground faults.
8.2.2.1 Overload Recovery With Negative VSENSE
The INA293 is a unidirectional current sense amplifier that is meant to operate with a positive differential input
voltage (VSENSE). If negative VSENSE is applied, the device is placed in an overload condition and requires time to
recover once VSENSE returns positive. The required overload recovery time increases with more negative
VSENSE
.
8.2.3 Application Curve
图8-3 shows the output response of a solenoid.
6
4
2
0
VCM
VOUT
40
30
20
10
0
Time (50 ms/div)
图8-3. Solenoid Control Current Response
8.3 Power Supply Recommendations
The INA293 power supply can be 5 V, whereas the input common-mode voltage can vary between –4 V to 110
V. The output voltage range of the OUT pin, however, is limited by the voltage on the power-supply pin.
8.4 Layout
8.4.1 Layout Guidelines
Attention to good layout practices is always recommended.
• Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing
of the current-sensing resistor commonly results in additional resistance present between the input pins.
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Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can
cause significant measurement errors.
• Place the power-supply bypass capacitor as close as possible to the device power supply and ground pins.
The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added
to compensate for noisy or high-impedance power supplies.
8.4.2 Layout Example
Supply
Voltage
OUT
GND
IN +
Vs
Bypass
Cap
Via to GND Plane
Ground Plane
IN -
图8-4. INA293A Recommended Layout
OUT
GND
Vs
IN -
Via to GND Plane
Supply
Voltage
IN +
Bypass
Cap
Ground Plane
图8-5. INA293B Recommended Layout
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9 Device and Documentation Support
9.1 Documentation Support
9.1.1 Related Documentation
For related documentation see the following: Texas Instruments, INA293EVM user's guide.
9.2 接收文档更新通知
要接收文档更新通知,请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册,即可每周接收产品信息更
改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
9.3 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
9.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
9.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
9.6 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
10 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Aug-2022
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
INA293A1IDBVR
INA293A1IDBVT
INA293A2IDBVR
INA293A2IDBVT
INA293A3IDBVR
INA293A3IDBVT
INA293A4IDBVR
INA293A4IDBVT
INA293A5IDBVR
INA293A5IDBVT
INA293B1IDBVR
INA293B1IDBVT
INA293B2IDBVR
INA293B2IDBVT
INA293B3IDBVR
INA293B3IDBVT
INA293B4IDBVR
INA293B4IDBVT
INA293B5IDBVR
INA293B5IDBVT
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
NIPDAU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
1XWC
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
1XWC
1XXC
1XXC
1XZC
1XZC
1Z1C
1Z1C
1Z7C
1Z7C
1Z2C
1Z2C
1Z3C
1Z3C
1Z4C
1Z4C
1Z5C
1Z5C
1Z6C
1Z6C
250
RoHS & Green
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Aug-2022
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF INA293 :
Automotive : INA293-Q1
•
NOTE: Qualified Version Definitions:
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
•
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
10-Aug-2022
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA293A1IDBVR
INA293A1IDBVT
INA293A2IDBVR
INA293A2IDBVT
INA293A3IDBVR
INA293A3IDBVT
INA293A4IDBVR
INA293A4IDBVT
INA293A5IDBVR
INA293A5IDBVT
INA293B1IDBVR
INA293B1IDBVT
INA293B2IDBVR
INA293B2IDBVT
INA293B3IDBVR
INA293B3IDBVT
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
3000
250
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
8.4
3.23
3.23
3.23
3.23
3.23
3.23
3.23
3.23
3.23
3.23
3.23
3.23
3.23
3.23
3.23
3.23
3.17
3.17
3.17
3.17
3.17
3.17
3.17
3.17
3.17
3.17
3.17
3.17
3.17
3.17
3.17
3.17
1.37
1.37
1.37
1.37
1.37
1.37
1.37
1.37
1.37
1.37
1.37
1.37
1.37
1.37
1.37
1.37
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
Q3
Q3
Q3
Q3
Q3
Q3
Q3
Q3
Q3
Q3
Q3
Q3
Q3
Q3
Q3
Q3
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
10-Aug-2022
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA293B4IDBVR
INA293B4IDBVT
INA293B5IDBVR
INA293B5IDBVT
SOT-23
SOT-23
SOT-23
SOT-23
DBV
DBV
DBV
DBV
5
5
5
5
3000
250
180.0
180.0
180.0
180.0
8.4
8.4
8.4
8.4
3.23
3.23
3.23
3.23
3.17
3.17
3.17
3.17
1.37
1.37
1.37
1.37
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
Q3
Q3
Q3
Q3
3000
250
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
10-Aug-2022
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
INA293A1IDBVR
INA293A1IDBVT
INA293A2IDBVR
INA293A2IDBVT
INA293A3IDBVR
INA293A3IDBVT
INA293A4IDBVR
INA293A4IDBVT
INA293A5IDBVR
INA293A5IDBVT
INA293B1IDBVR
INA293B1IDBVT
INA293B2IDBVR
INA293B2IDBVT
INA293B3IDBVR
INA293B3IDBVT
INA293B4IDBVR
INA293B4IDBVT
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
DBV
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
3000
250
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
3000
250
Pack Materials-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
10-Aug-2022
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
INA293B5IDBVR
INA293B5IDBVT
SOT-23
SOT-23
DBV
DBV
5
5
3000
250
183.0
183.0
183.0
183.0
20.0
20.0
Pack Materials-Page 4
PACKAGE OUTLINE
DBV0005A
SOT-23 - 1.45 mm max height
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR
C
3.0
2.6
0.1 C
1.75
1.45
1.45
0.90
B
A
PIN 1
INDEX AREA
1
2
5
(0.1)
2X 0.95
1.9
3.05
2.75
1.9
(0.15)
4
3
0.5
5X
0.3
0.15
0.00
(1.1)
TYP
0.2
C A B
NOTE 5
0.25
GAGE PLANE
0.22
0.08
TYP
8
0
TYP
0.6
0.3
TYP
SEATING PLANE
4214839/G 03/2023
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Refernce JEDEC MO-178.
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.25 mm per side.
5. Support pin may differ or may not be present.
www.ti.com
EXAMPLE BOARD LAYOUT
DBV0005A
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
PKG
5X (1.1)
1
5
5X (0.6)
SYMM
(1.9)
2
3
2X (0.95)
4
(R0.05) TYP
(2.6)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:15X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
EXPOSED METAL
EXPOSED METAL
0.07 MIN
ARROUND
0.07 MAX
ARROUND
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4214839/G 03/2023
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
DBV0005A
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
PKG
5X (1.1)
1
5
5X (0.6)
SYMM
(1.9)
2
3
2X(0.95)
4
(R0.05) TYP
(2.6)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:15X
4214839/G 03/2023
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
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