INA293A4IDBVT [TI]

-4V 至 110V、1.3MHz 超精密电流感应放大器 | DBV | 5 | -40 to 125;


型号：	INA293A4IDBVT
厂家：	TEXAS INSTRUMENTS
描述：	-4V 至 110V、1.3MHz 超精密电流感应放大器 \| DBV \| 5 \| -40 to 125 放大器
文件：	总31页 (文件大小：1651K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

INA293

ZHCSKJ8B –DECEMBER 2019 –REVISED AUGUST 2022

INA293 –4V 至110V、1.3MHz 超精密电流检测放大器

1 特性

3 说明

• 宽共模电压：

INA293 是一款超精密电流检测放大器，可在 –4V 至

110V 的宽共模范围内测量分流电阻器上的压降。负共

模电压允许器件的工作电压低于接地电压，从而可在半

桥应用中精确测量再循环电流。低失调电压、小增益误

差和高直流 CMRR 的组合可实现高精度的电流测量。

INA293 不仅适用于直流电流测量，还适用于高速应用

（例如快速过流保护），此类应用具有1.3MHz 的高带

宽和85dB 交流CMRR（50kHz 时）。

– 工作电压：-4 V 至+110 V

– 可承受电压：-20 V 至+120 V

• 出色的共模抑制比(CMRR)：

– 160dB 直流CMRR

– 85dB 交流CMRR（50kHz 时）

• 精度：

– 增益：

INA293 由 2.7V 至 20V 的单电源供电，电源电流为

1.5mA。INA293 提供五个增益选项：20V/V、50V/V、

100V/V、200V/V 和 500V/V。这些增益选项可以满足

宽动态范围电流检测应用。

• 增益误差：±0.15%（最大值）

• 增益漂移：±10ppm/°C（最大值）

– 失调电压：

• 失调电压：±15µV（典型值）

• 温漂：±0.05µV/°C（典型值）

• 可用增益：

INA293 的额定工作温度范围为 -40 °C 至+125 °C，并

且采用节省空间且配备两种引脚型号的SOT-23 封装。

– INA293A1、INA293B1：20V/V

– INA293A2、INA293B2：50V/V

– INA293A3、INA293B3：100V/V

– INA293A4、INA293B4：200V/V

– INA293A5、INA293B5：500V/V

• 高带宽：1.3 MHz

器件信息⁽¹⁾

封装尺寸（标称值）

器件型号

INA293

封装

SOT-23 (5)

2.90mm × 1.60mm

(1) 如需了解所有可用封装，请参阅数据表末尾的封装选项附录。

V_S

V_CM

• 压摆率：2.5 V/µs

• 静态电流：1.5mA

I_SENSE

2 应用

IN+

Current

R_SENSE

Bias

• 有源天线系统mMIMO (AAS)

• 宏远程无线电单元(RRU)

• 48V 机架式服务器

Feedback

OUT

INœ

Buffer

Load

• 48V 商用网络和服务器电源(PSU)

• 48V 电池管理系统(BMS)

GND

功能方框图

本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问

www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。

English Data Sheet: SBOS470

INA293

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ZHCSKJ8B –DECEMBER 2019 –REVISED AUGUST 2022

Table of Contents

7.4 Device Functional Modes..........................................15

8 Application and Implementation..................................16

8.1 Application Information............................................. 16

8.2 Typical Application.................................................... 18

8.3 Power Supply Recommendations.............................19

8.4 Layout....................................................................... 19

9 Device and Documentation Support............................21

9.1 Documentation Support............................................ 21

9.2 接收文档更新通知..................................................... 21

9.3 支持资源....................................................................21

9.4 Trademarks...............................................................21

9.5 Electrostatic Discharge Caution................................21

9.6 术语表....................................................................... 21

10 Mechanical, Packaging, and Orderable

1 特性................................................................................... 1

2 应用................................................................................... 1

3 说明................................................................................... 1

4 Revision History.............................................................. 2

5 Pin Configuration and Functions...................................3

6 Specifications.................................................................. 4

6.1 Absolute Maximum Ratings ....................................... 4

6.2 ESD Ratings .............................................................. 4

6.3 Recommended Operating Conditions ........................5

6.4 Thermal Information ...................................................5

6.5 Electrical Characteristics ............................................5

6.6 Typical Characteristics................................................7

7 Detailed Description......................................................13

7.1 Overview...................................................................13

7.2 Functional Block Diagram.........................................13

7.3 Feature Description...................................................13

Information.................................................................... 21

4 Revision History

Changes from Revision A (June 2021) to Revision B (August 2022)

Page

• Changed 方程式5 ........................................................................................................................................... 17

• Moved the Power Supply Recommendations and Layout sections to the Application and Implementation

section.............................................................................................................................................................. 19

Changes from Revision * (December 2019) to Revision A (June 2021)

Page

• 将数据表标题从“INA293 –4V 至110V 1MHz 高精度电流检测放大器”更改为INA293 –4-V 至110-V、1.3-

MHz、高精密电流感测放大器.............................................................................................................................1

• 更新了整个文档中的表格、图和交叉参考的编号格式.........................................................................................1

• 在说明部分中将“高精度”更改为“超精密”...................................................................................................1

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5 Pin Configuration and Functions

OUT

GND

IN+

OUT

GND

INœ

IN+

Not to scale

图5-1. INA293A: DBV Package 5-Pin SOT-23 Top

图5-2. INA293B: DBV Package 5-Pin SOT-23 Top

View

表5-1. Pin Functions

TYPE

DESCRIPTION

NAME

GND

OUT

INA293A

INA293B

Ground Ground

Output Output voltage

Power Power supply

IN+

Input

Shunt resistor positive sense input

Shunt resistor negative sense input

IN–

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

MIN

MAX

UNIT

Supply Voltage

(V_s)

–0.3

Differential (V_IN+) –(V_IN–), INA293A5, INA293B5

–6

–12

Analog Inputs,

V_IN+, V_IN–

Differential (V_IN+) –(V_IN–), All others

(2)

Common - mode

Output

120

–20

Vs + 0.3

150

GND –0.3

–55

T_A

Operating temperature

Junction temperature

Storage temperature

°C

T_J

150

T_stg

150

–65

(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2) VIN+ and VIN–are the voltages at the IN+ and IN–pins, respectively.

6.2 ESD Ratings

VALUE

UNIT

Human body model (HBM), per ANSI/ESDA/

JEDEC JS-001, all pins⁽¹⁾

±2000

V_(ESD)

Electrostatic discharge

Charged device model (CDM), per JEDEC

specification JESD22-C101, all pins⁽²⁾

±1000

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

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6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

–4

2.7

NOM

MAX

110

UNIT

V_CM

V_S

Common-mode input range

Operating supply range

Differential sense input range

Ambient temperature

V_SENSE

T_A

V_S/ G

125

°C

–40

6.4 Thermal Information

INA293

THERMAL METRIC⁽¹⁾

DBV (SOT-23)

5 PINS

184.7

UNIT

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

R_θJC(top)

R_θJB

105.6

47.2

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

21.5

Ψ_JT

46.9

Ψ_JB

R_θJC(bot)

N/A

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.5 Electrical Characteristics

at T_A= 25 °C, V_S= 5 V, V_SENSE= V_IN+- V_IN-= 0.5 V / Gain, V_CM= V_IN-= 48 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

V_CM

Common-mode input range⁽¹⁾

T_A= -40°C to +125°C

110

–4

-4 V ≤V_CM≤110 V, T_A= -40°C to

+125°C

140

160

Common-mode rejection ratio, input

referred

CMRR

f = 50 kHz

INA293x1

INA293x2

INA293x3

INA293x4

INA293x5

±30

±15

±10

±5

±150

±80

±50

±30

±20

V_os

Offset voltage, input referred

µV

±2

T_A= -40℃to +125℃, INA293x1,

INA293x2, INA293x3

±0.05

±0.025

±1

±0.5

±0.25

±8

dV_os/dT Offset voltage drift

µV/℃

µV/V

T_A= -40℃to +125℃, INA293x4,

INA293x5

INA293x1, 2.7 V ≤V_S≤20 V,

T_A= -40°C to +125°C

Power supply rejection ratio, input

INA293x2, INA293x3, 2.7 V ≤V_S≤20

V, T_A= -40°C to +125°C

PSRR

±0.3

±3

referred

INA293x4, INA293x5, 2.7 V ≤V_S≤20

V, T_A= -40°C to +125°C

±0.1

±1

I_B+, V_SENSE= 0 V

I_B-, V_SENSE= 0 V

I_B

Input bias current

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6.5 Electrical Characteristics (continued)

at T_A= 25 °C, V_S= 5 V, V_SENSE= V_IN+- V_IN-= 0.5 V / Gain, V_CM= V_IN-= 48 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OUTPUT

INA293x1

INA293x2

INA293x3

INA293x4

INA293x5

V/V

Gain

100

200

500

±0.02

±1

±0.15

GND + 50 mV ≤V_OUT≤V_S–200 mV

G_ERR

Gain error

T_A= -40°C to +125°C

±10 ppm/°C

NL_ERR

Nonlinearity error

0.01

No sustained oscillations, no isolation

resistor

Maximum capacitive load

500

VOLTAGE OUTPUT

Swing to Vs (Power supply rail)

Vs –

0.07

Vs –

0.15

R_LOAD= 10 kΩ, T_A= -40°C to +125°C

R_LOAD= 10 kΩ, V_SENSE= 0 V, T_A= -40°C

to +125°C

Swing to ground

0.005

0.02

FREQUENCY RESPONSE

INA293x1, C_LOAD= 5 pF,

V_SENSE= 200 mV

1300

1000

900

INA293x2, C_LOAD= 5 pF,

V_SENSE= 80 mV

INA293x3, C_LOAD= 5 pF,

V_SENSE= 40 mV

Bandwidth

kHz

INA293x4, C_LOAD= 5 pF,

V_SENSE= 20 mV

INA293x5, C_LOAD= 5 pF,

V_SENSE= 8 mV

900

2.5

Slew rate

Rising edge

V/µs

µs

V_OUT= 4 V ± 0.1 V step, Output settles to

0.5%

V_OUT= 4 V ± 0.1 V step, Output settles to

Settling time

V_OUT= 4 V ± 0.1 V step, Output settles to

NOISE

Ven

Voltage noise density

nV/√Hz

POWER SUPPLY

Supply voltage

2.7

T_A= –40°C to +125°C

1.5

I_Q

Quiescent current

T_A= -40°C to +125°C

2.25

(1) Common-mode voltage at both V_IN+and V_IN-must not exceed the specified common-mode input range.

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6.6 Typical Characteristics

All specifications at T_A= 25 °C, V_S= 5 V, V_SENSE= V_IN+–V_IN-= 0.5 V / Gain, V_CM= V_IN–= 48 V, unless otherwise noted.

Input Offset Voltage (mV)

图6-2. INA293x2 Input Offset Production Distribution

图6-1. INA293x1 Input Offset Production Distribution

Input Offset Voltage (mV)

图6-3. INA293x3 Input Offset Production Distribution

图6-4. INA293x4 Input Offset Production Distribution

G = 20

G = 50

-8

G = 100

G = 200

G = 500

-16

-75 -50 -25

75 100 125 150 175

Temperature (èC)

Input Offset Voltage (mV)

图6-6. Input Offset Voltage vs Temperature

图6-5. INA293x5 Input Offset Production Distribution

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6.6 Typical Characteristics (continued)

All specifications at T_A= 25 °C, V_S= 5 V, V_SENSE= V_IN+–V_IN-= 0.5 V / Gain, V_CM= V_IN–= 48 V, unless otherwise noted.

180

160

140

120

100

G = 20

G = 50

-10

G = 100

G = 200

G = 500

-20

100

1k 10k

Frequency (Hz)

100k

-75 -50 -25

75 100 125 150 175

Temperature (èC)

图6-8. Common-Mode Rejection Ratio vs Frequency

图6-7. Common-Mode Rejection Ratio vs Temperature

0.10

G = 20

G = 50

G = 100

G = 200

G = 500

0.05

0.00

G = 20

G = 50

G = 100

G = 200

G = 500

-0.05

-10

-0.10

100

10k

Frequency (Hz)

100k

10M

-75 -50 -25

75 100 125 150 175

Temperature (èC)

图6-9. Gain vs Frequency

图6-10. Gain Error vs Temperature

1.0

0.8

140

120

100

0.6

0.4

0.2

0.0

-0.2

-0.4

-0.6

-0.8

-1.0

G = 20

G = 50

G = 100

G = 200

G = 500

100

1k 10k

Frequency (Hz)

100k

-75 -50 -25

75 100 125 150 175

Temperature (èC)

图6-12. Power-Supply Rejection Ratio vs Frequency

图6-11. Power-Supply Rejection Ratio vs Temperature

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6.6 Typical Characteristics (continued)

All specifications at T_A= 25 °C, V_S= 5 V, V_SENSE= V_IN+–V_IN-= 0.5 V / Gain, V_CM= V_IN–= 48 V, unless otherwise noted.

V_S= 2.7 to 20V, V_CM= 48V

V_S= 2.7 to 20V, V_CM= 120V

V_S= 2.7 to 20V, V_CM= -4V

V_S= 0V, V_CM= 120V

V_S= 5V

V_S= 20V

V_S= 2.7V

V_S= 0V

V_S= 0V, V_CM= -4V

V_S= 0V and 20V, V_CM= -20V

-5

-10

-20

Common-Mode Voltage (V)

100

120

-75 -50 -25

75 100 125 150 175

Temperature (èC)

图6-14. Input Bias Current vs Temperature

V_SENSE= 0 V

图6-13. Input Bias Current vs Common-Mode Voltage

240

140

120

100

I_B+

I_B-

I_B+

I_B-

200

I_B+, V_S= 0V

160

I_B-, V_S= 0V

120

I_B+, V_S= 0V

I_B-, V_S= 0V

-40

-80

-120

-160

-20

-40

-60

-80

200

400

V_SENSE(mV)

600

800

1000

100

200

V_SENSE(mV)

300

400

图6-15. INA293x1 Input Bias Current vs V_SENSE

图6-16. INA293x2, INA293x3 Input Bias Current vs V_SENSE

100

V_S

I_B+, G=200

I_B+, G=500

I_B-

I_B+, V_S= 0V

I_B-, V_S= 0V

25èC

125èC

-40èC

V_S- 1

V_S- 2

GND + 2

GND + 1

GND

-20

100

Output Current (mA)

V_SENSE(mV)

图6-17. INA293x4, INA293x5 Input Bias Current vs V_SENSE

V_S= 2.7 V

图6-18. Output Voltage vs Output Current

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6.6 Typical Characteristics (continued)

All specifications at T_A= 25 °C, V_S= 5 V, V_SENSE= V_IN+–V_IN-= 0.5 V / Gain, V_CM= V_IN–= 48 V, unless otherwise noted.

V_S

V_S- 1

V_S- 2

V_S- 3

V_S

V_S- 1

V_S- 2

V_S- 3

25èC

125èC

-40èC

25èC

125èC

-40èC

GND + 3

GND + 2

GND + 1

GND

GND + 3

GND + 2

GND + 1

GND

Output Current (mA)

V_S= 5 V

V_S= 20 V

图6-19. Output Voltage vs Output Current

图6-20. Output Voltage vs Output Current

1000

500

0.00

-0.10

-0.20

-0.30

-0.40

-0.50

200

100

0.5

0.2

0.1

0.05

V_S= 5V

V_S= 20V

V_S= 2.7V

0.02

0.01

100

10k

Frequency (Hz)

100k

10M

-75 -50 -25

75 100 125 150 175

Temperature (èC)

图6-21. Output Impedance vs Frequency

图6-22. Swing to Supply vs Temperature

0.020

0.015

0.010

0.005

0.000

100

V_S= 5V

V_S= 20V

V_S= 2.7V

G = 20

G = 500

100

1k 10k

Frequency (Hz)

100k

-75 -50 -25

75 100 125 150 175

Temperature (èC)

图6-24. Input Referred Noise vs Frequency

图6-23. Swing to GND vs Temperature

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6.6 Typical Characteristics (continued)

All specifications at T_A= 25 °C, V_S= 5 V, V_SENSE= V_IN+–V_IN-= 0.5 V / Gain, V_CM= V_IN–= 48 V, unless otherwise noted.

1.8

1.6

V_S= 20V

1.4

V_S= 5V

1.2

G = 20 to 50

V_S= 2.7V

G = 100 to 500

0.8

2.5

7.5

12.5

Output Voltage (V)

17.5

Time (1 s/div)

图6-25. Input Referred Noise

图6-26. Quiescent Current vs Output Voltage

1.8

1.6

1.4

1.2

V_S= 5V

V_S= 20V

V_S= 2.7V

V_S= 5V, Sourcing

V_S= 5V, Sinking

V_S= 20V, Sourcing

V_S= 20V, Sinking

V_S= 2.7V, Sourcing

V_S= 2.7V, Sinking

0.8

-75 -50 -25

75 100 125 150 175

-75 -50 -25

75 100 125 150 175

Temperature (èC)

图6-27. Quiescent Current vs Temperature

图6-28. Short-Circuit Current vs Temperature

1.8

1.6

1.4

1.2

V_S= 5V

V_S= 20V

V_S= 2.7V

1.8

1.6

1.4

1.2

25èC

125èC

-40èC

0.8

Supply Voltage (V)

-20

Common-Mode Voltage (V)

100

120

图6-29. Quiescent Current vs Supply Voltage

图6-30. Quiescent Current vs Common-Mode Voltage

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6.6 Typical Characteristics (continued)

All specifications at T_A= 25 °C, V_S= 5 V, V_SENSE= V_IN+–V_IN-= 0.5 V / Gain, V_CM= V_IN–= 48 V, unless otherwise noted.

V_CM

V_OUT

Time (10 ms/div)

Time (12.5ms/div)

图6-32. INA293x3 Step Response

图6-31. Common-Mode Voltage Fast Transient Pulse

Supply Voltage

Output Voltage

Supply Voltage

Output Voltage

Time (5 ms/div)

Time (50 ms/div)

图6-34. Supply Transient Response

图6-33. Start-Up Response

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7 Detailed Description

7.1 Overview

The INA293 is a high- or low-side current-sense amplifier that offers a wide common-mode range, precision

zero-drift topology, excellent common-mode rejection ratio (CMRR), high bandwidth and fast slew rate. Different

gain versions are available to optimize the output dynamic range based on the application. The INA293 is

designed using a transconductance architecture with a current-feedback amplifier that enables low bias currents

of 20 μA with a common-mode voltage of 110 V.

7.2 Functional Block Diagram

V_S

Load

Supply

I_SENSE

IN+

Current

R_SENSE

Bias

Feedback

OUT

INœ

Buffer

Load

GND

7.3 Feature Description

7.3.1 Amplifier Input Common-Mode Signal

The INA293 supports large input common-mode voltages from –4 V to +110 V. Because of the internal

topology, the common-mode range is not restricted by the power-supply voltage (V_S). This allows for the INA293

to be used for both low and high side current-sensing applications.

7.3.1.1 Input-Signal Bandwidth

The INA293 –3-dB bandwidth is gain dependent, with several gain options of 20 V/V, 50 V/V, 100 V/V, 200 V/V,

and 500 V/V. The unique multistage design enables the amplifier to achieve high bandwidth at all gains. This

high bandwidth provides the throughput and fast response that is required for the rapid detection and processing

of overcurrent events.

The bandwidth of the device also depends on the applied V_SENSEvoltage. 图 7-1 shows the bandwidth

performance profile of the device over frequency as output voltage increases for each gain variation. As shown

in 图 7-1, the device exhibits the highest bandwidth with higher V_SENSEvoltages, and the bandwidth is higher

with lower device gain options. Individual requirements determine the acceptable limits of error for high

frequency current-sensing applications. Testing and evaluation in the end application or circuit is required to

determine the acceptance criteria, and to validate that the performance levels meet the system specifications.

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1400

1200

1000

800

600

INA293A1

INA293A2

INA293A3

INA293A4

INA293A5

400

200

Output Voltage (V)

图7-1. Bandwidth vs Output Voltage

7.3.1.2 Low Input Bias Current

The INA293 inputs draw a 20-µA (typical) bias current at a common-mode voltage as high as 110 V, which

enables precision current sensing on applications that require lower current leakage.

7.3.1.3 Low V_SENSEOperation

The INA293 operates with high performance across the entire valid V_SENSErange. The zero-drift input

architecture of the INA293 provides the low offset voltage and low offset drift needed to measure low V_SENSE

levels accurately across the wide operating temperature of –40 °C to +125 °C. Low V_SENSEoperation is

particularly beneficial when using low ohmic shunts for low current measurements, as power losses across the

shunt are significantly reduced.

7.3.1.4 Wide Fixed Gain Output

The INA293 gain error is < 0.15% at room temperature, with a maximum drift of 10 ppm/°C over the full

temperature range of –40°C to +125°C. The INA293 is available in multiple gain options of 20 V/V, 50 V/V, 100

V/V, 200 V/V, and 500 V/V, which the system designer should select based on their desired signal-to-noise ratio

and other system requirements.

The INA293 closed-loop gain is set by a precision, low drift internal resistor network. The ratio of these resistors

are excellently matched, while the absolute values may vary significantly. Adding additional resistance around

the INA293 to change the effective gain is not recommended, however, because of this variation. The typical

values of the gain resistors are described in 表7-1.

表7-1. Fixed Gain Resistor

GAIN

20 (V/V)

50 (V/V)

100 (V/V)

200 (V/V)

500 (V/V)

25 kΩ

10 kΩ

5 kΩ

500 kΩ

1000 kΩ

2 kΩ

7.3.1.5 Wide Supply Range

The INA293 operates with a wide supply range from 2.7 V to 20 V. The output stage supports a wide output

range while INA293x1 (gain of 20 V/V) at a supply voltage of 20 V allows a maximum acceptable differential

input of 1 V. When paired with the small input offset voltage of the INA293, systems with very wide dynamic

range of current measurement can be supported.

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7.4 Device Functional Modes

7.4.1 Unidirectional Operation

The INA293 measures the differential voltage developed by current flowing through a resistor, commonly

referred to as a current-sensing resistor or a current-shunt resistor. The INA293 operates in unidirectional mode

only, meaning it only senses current sourced from a power supply to a system load as shown in 图7-2.

5 V

48-V

Supply

I_SENSE

IN+

Current

Feedback

R_SENSE

Bias

OUT

INœ

Buffer

Load

GND

图7-2. Unidirectional Application

The linear range of the output stage is limited to how close the output voltage can approach ground under zero-

input conditions. The zero current output voltage of the INA293 is very small, with a maximum of GND + 20 mV.

Make sure to apply a differential input voltage of (20 mV / Gain) or greater to keep the INA293 output in the

linear region of operation.

7.4.2 High Signal Throughput

With a bandwidth of 1.3 MHz at a gain of 20 V/V and a slew rate of 2.5 V/µs, the INA293 is specifically designed

for detecting and protecting applications from fast inrush currents. As shown in 表 7-2, the INA293 responds in

less than 2 µs for a system measuring a 75-A threshold on a 2-mΩshunt.

表7-2. Response Time

INA293

PARAMETER

Gain

EQUATION

AT V_S= 5 V

20 V/V

100 A

75 A

I_MAX

Maximum current

I_Threshold

R_SENSE

V_{OUT_MAX}

V_{OUT_THR}

Threshold current

Current sense resistor value

Output voltage at maximum current

Output voltage at threshold current

Slew rate

2 mΩ

4 V

V_{OUT_MAX}= I_MAX× R_SENSE× G

V_{OUT_THR}= I_THR× R_SENSE× G

3 V

2.5 V/µs

< 2 µs

Output response time

T_response= V_{OUT_THR}/ SR

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8 Application and Implementation

备注

以下应用部分中的信息不属于TI 器件规格的范围，TI 不担保其准确性和完整性。TI 的客户应负责确定

器件是否适用于其应用。客户应验证并测试其设计，以确保系统功能。

8.1 Application Information

The INA293 amplifies the voltage developed across a current-sensing resistor as current flows through the

resistor to the load. The wide input common-mode voltage range and high common-mode rejection of the

INA293 make it usable over a wide range of voltage rails while still maintaining an accurate current

measurement.

8.1.1 R_SENSEand Device Gain Selection

The accuracy of any current-sense amplifier is maximized by choosing the current-sense resistor to be as large

as possible. A large sense resistor maximizes the differential input signal for a given amount of current flow and

reduces the error contribution of the offset voltage. However, there are practical limits as to how large the

current-sense resistor can be in a given application because of the resistor size and maximum allowable power

dissipation. 方程式 1 gives the maximum value for the current-sense resistor for a given power dissipation

budget:

PD_MAX

R_SENSE

I_MAX

(1)

where:

• PD_MAXis the maximum allowable power dissipation in R_SENSE

• I_MAXis the maximum current that will flow through R_SENSE

An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply

voltage, V_S, and device swing-to-rail limitations. To make sure that the current-sense signal is properly passed to

the output, both positive and negative output swing limitations must be examined. 方程式 2 provides the

maximum values of R_SENSEand GAIN to keep the device from exceeding the positive swing limitation.

I_MAXª R_SENSEª GAIN < V_SP

(2)

where:

• I_MAXis the maximum current that will flow through R_SENSE

• GAIN is the gain of the current-sense amplifier.

• V_SPis the positive output swing as specified in the data sheet.

To avoid positive output swing limitations when selecting the value of R_SENSE, there is always a trade-off

between the value of the sense resistor and the gain of the device under consideration. If the sense resistor

selected for the maximum power dissipation is too large, then it is possible to select a lower-gain device in order

to avoid positive swing limitations.

The negative swing limitation places a limit on how small the sense resistor value can be for a given application.

方程式3 provides the limit on the minimum value of the sense resistor.

I_MINª R_SENSEª GAIN > V_SN

(3)

where:

• I_MINis the minimum current that will flow through R_SENSE

• GAIN is the gain of the current-sense amplifier.

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• V_SNis the negative output swing of the device.

表 8-1 shows an example of the different results obtained from using five different gain versions of the INA293.

From the table data, the highest gain device allows a smaller current-shunt resistor and decreased power

dissipation in the element.

表8-1. R_SENSESelection and Power Dissipation⁽¹⁾

RESULTS AT V_S= 5 V

PARAMETER

EQUATION

A1, B1

A2, B2

A3, B3

A4, B4

A5, B5

DEVICES

Gain

20 V/V

250 mV

25 mΩ

2.5 W

50 V/V

100 mV

10 mΩ

1 W

100 V/V

50 mV

5 mΩ

0.5W

200 V/V

25 mV

500 V/V

10 mV

1 mΩ

0.1 W

V_DIFF

R_SENSE

P_SENSE

Ideal differential input voltage

V_DIFF= V_OUT/ G

Current sense resistor value

R_SENSE= V_DIFF/ I_MAX

2.5 mΩ

0.25 W

Current-sense resistor power dissipation

R_SENSE× I_MAX2

(1) Design example with 10-A full-scale current with maximum output voltage set to 5 V.

8.1.2 Input Filtering

备注

Input filters are not required for accurate measurements using the INA293, and use of filters in this

location is not recommended. If filter components are used on the input of the amplifier, follow the

guidelines in this section to minimize the effects on performance.

Based strictly on user design requirements, external filtering of the current signal may be desired. The initial

location that can be considered for the filter is at the output of the current sense amplifier. Although placing the

filter at the output satisfies the filtering requirements, this location changes the low output impedance measured

by any circuitry connected to the output voltage pin. The other location for filter placement is at the current sense

amplifier input pins. This location satisfies the filtering requirement also, however the components must be

carefully selected to minimally impact device performance. 图8-1 shows a filter placed at the input pins.

V_S

V_CM

I_SENSE

R_IN

IN+

C_IN

Current

R_SENSE

Bias

Feedback

R_IN

OUT

INœ

Buffer

Load

GND

图8-1. Filter at Input Pins

External series resistance provides a source of additional measurement error, so keep the value of these series

resistors to 10 Ω or less to reduce loss of accuracy. The internal bias network shown in 图 8-1 creates a

mismatch in input bias currents (see 图6-15, 图6-16 and 图6-17) when a differential voltage is applied between

the input pins. If additional external series filter resistors are added to the circuit, a mismatch is created in the

voltage drop across the filter resistors. This voltage is a differential error voltage in the shunt resistor voltage. In

addition to the absolute resistor value, mismatch resulting from resistor tolerance can significantly impact the

error because this value is calculated based on the actual measured resistance.

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The measurement error expected from the additional external filter resistors can be calculated using 方程式 4,

where the gain error factor is calculated using 方程式5.

Gain Error (%) = 100 - (100 ´ Gain Error Factor)

(4)

The gain error factor, shown in 方程式 4, can be calculated to determine the gain error introduced by the

additional external series resistance. 方程式 4 calculates the deviation of the shunt voltage, resulting from the

attenuation and imbalance created by the added external filter resistance. 表 8-2 provides the gain error factor

and gain error for several resistor values.

R_B× R1

Gain Error Factor =

(R_B× R1) + (R_B× R_IN) + (2 × R_IN× R1)

(5)

Where:

• R_INis the external filter resistance value.

• R1 is the INA293 input resistance value specified in 表7-1.

• R_Bin the internal bias resistance, which is 6600 Ω± 20%.

表8-2. Example Gain Error Factor and Gain Error for 10-ΩExternal Filter Input Resistors

DEVICE (GAIN)

INA293x1 (20)

INA293x2 (50)

INA293x3 (100)

INA293x4 (200)

INA293x5 (500)

GAIN ERROR FACTOR

GAIN ERROR (%)

-0.289161432

-0.348779273

-0.447984072

-0.744416873

0.997108386

0.996512207

0.995520159

0.992555831

8.2 Typical Application

The INA293 is a unidirectional, current-sense amplifier capable of measuring currents through a resistive shunt

with shunt common-mode voltages from –4 V to +110 V.

24 V

Solenoid

R_SENSE

I_SENSE

MCU

ADC

INA

5 V

GND

图8-2. Current Sensing in a Solenoid Application

8.2.1 Design Requirements

In this example application, the common-mode voltage ranges from 0 V to 24 V. The maximum sense current is

1.5 A, and a 5-V supply is available for the INA293. Following the design guidelines from the R_SENSEand Device

Gain Selection section, a R_SENSEof 50 mΩ and a gain of 50 V/V are selected to provide good output dynamic

range. 表8-3 lists the design setup for this application.

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表8-3. Design Parameters

DESIGN PARAMETERS

EXAMPLE VALUE

Power supply voltage

Common-mode voltage range

Maximum sense current

R_SENSEresistor

5 V

0 V to 24 V

1.5 A

50 mΩ

Gain option

50 V/V

8.2.2 Detailed Design Procedure

The INA293 is designed to measure current in a typical solenoid application. The INA293 measures current

across the 50-mΩ shunt that is placed at the output of the half-bridge. The INA293 measures the differential

voltage across the shunt resistor, and the signal is internally amplified with a gain of 50 V/V. The output of the

INA293 is connected to the analog-to-digital converter (ADC) of an MCU to digitize the current measurements.

Solenoid loads are highly inductive and are often prone to failure. Solenoids are often used for position control,

precise fluid control, and fluid regulation. Measuring real-time current on the solenoid continuously can indicate

premature failure of the solenoid which can lead to a faulty control loop in the system. Measuring high-side

current also indicates if there are any ground faults on the solenoid or the FETs that can be damaged in an

application. The INA293, with high bandwidth and slew rate, can be used to detect fast overcurrent conditions to

prevent the solenoid damage from short-to-ground faults.

8.2.2.1 Overload Recovery With Negative V_SENSE

The INA293 is a unidirectional current sense amplifier that is meant to operate with a positive differential input

voltage (V_SENSE). If negative V_SENSEis applied, the device is placed in an overload condition and requires time to

recover once V_SENSEreturns positive. The required overload recovery time increases with more negative

V_SENSE

8.2.3 Application Curve

图8-3 shows the output response of a solenoid.

VCM

VOUT

Time (50 ms/div)

图8-3. Solenoid Control Current Response

8.3 Power Supply Recommendations

The INA293 power supply can be 5 V, whereas the input common-mode voltage can vary between –4 V to 110

V. The output voltage range of the OUT pin, however, is limited by the voltage on the power-supply pin.

8.4 Layout

8.4.1 Layout Guidelines

Attention to good layout practices is always recommended.

• Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique

makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing

of the current-sensing resistor commonly results in additional resistance present between the input pins.

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Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can

cause significant measurement errors.

• Place the power-supply bypass capacitor as close as possible to the device power supply and ground pins.

The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added

to compensate for noisy or high-impedance power supplies.

8.4.2 Layout Example

Supply

Voltage

OUT

GND

IN +

Bypass

Cap

Via to GND Plane

Ground Plane

IN -

图8-4. INA293A Recommended Layout

OUT

GND

IN -

Via to GND Plane

Supply

Voltage

IN +

Bypass

Cap

Ground Plane

图8-5. INA293B Recommended Layout

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9 Device and Documentation Support

9.1 Documentation Support

9.1.1 Related Documentation

For related documentation see the following: Texas Instruments, INA293EVM user's guide.

9.2 接收文档更新通知

要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新进行注册，即可每周接收产品信息更

改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。

9.3 支持资源

TI E2E^™支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解

答或提出自己的问题可获得所需的快速设计帮助。

链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅

TI 的《使用条款》。

9.4 Trademarks

TI E2E^™is a trademark of Texas Instruments.

所有商标均为其各自所有者的财产。

9.5 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

9.6 术语表

TI 术语表

本术语表列出并解释了术语、首字母缩略词和定义。

10 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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PACKAGE OPTION ADDENDUM

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10-Aug-2022

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

INA293A1IDBVR

INA293A1IDBVT

INA293A2IDBVR

INA293A2IDBVT

INA293A3IDBVR

INA293A3IDBVT

INA293A4IDBVR

INA293A4IDBVT

INA293A5IDBVR

INA293A5IDBVT

INA293B1IDBVR

INA293B1IDBVT

INA293B2IDBVR

INA293B2IDBVT

INA293B3IDBVR

INA293B3IDBVT

INA293B4IDBVR

INA293B4IDBVT

INA293B5IDBVR

INA293B5IDBVT

ACTIVE

SOT-23

DBV

3000 RoHS & Green

250 RoHS & Green

3000 RoHS & Green

250 RoHS & Green

3000 RoHS & Green

250 RoHS & Green

3000 RoHS & Green

250 RoHS & Green

3000 RoHS & Green

250 RoHS & Green

3000 RoHS & Green

250 RoHS & Green

3000 RoHS & Green

250 RoHS & Green

3000 RoHS & Green

250 RoHS & Green

3000 RoHS & Green

250 RoHS & Green

3000 RoHS & Green

NIPDAU

Level-1-260C-UNLIM

-40 to 125

1XWC

Samples

NIPDAU

1XWC

1XXC

1XZC

1Z1C

1Z7C

1Z2C

1Z3C

1Z4C

1Z5C

1Z6C

250

RoHS & Green

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

10-Aug-2022

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF INA293 :

Automotive : INA293-Q1

•

NOTE: Qualified Version Definitions:

Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects

•

Addendum-Page 2

PACKAGE MATERIALS INFORMATION

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10-Aug-2022

TAPE AND REEL INFORMATION

REEL DIMENSIONS

TAPE DIMENSIONS

Reel

Diameter

Cavity

A0 Dimension designed to accommodate the component width

B0 Dimension designed to accommodate the component length

K0 Dimension designed to accommodate the component thickness

Overall width of the carrier tape

P1 Pitch between successive cavity centers

Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Sprocket Holes

Q1 Q2

Q3 Q4

Q1 Q2

Q3 Q4

User Direction of Feed

Pocket Quadrants

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

INA293A1IDBVR

INA293A1IDBVT

INA293A2IDBVR

INA293A2IDBVT

INA293A3IDBVR

INA293A3IDBVT

INA293A4IDBVR

INA293A4IDBVT

INA293A5IDBVR

INA293A5IDBVT

INA293B1IDBVR

INA293B1IDBVT

INA293B2IDBVR

INA293B2IDBVT

INA293B3IDBVR

INA293B3IDBVT

SOT-23

DBV

3000

250

180.0

8.4

3.23

3.17

1.37

4.0

8.0

3000

250

3000

250

3000

250

3000

250

3000

250

3000

250

3000

250

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

10-Aug-2022

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

INA293B4IDBVR

INA293B4IDBVT

INA293B5IDBVR

INA293B5IDBVT

SOT-23

DBV

3000

250

180.0

8.4

3.23

3.17

1.37

4.0

8.0

3000

250

Pack Materials-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

10-Aug-2022

TAPE AND REEL BOX DIMENSIONS

Width (mm)

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

INA293A1IDBVR

INA293A1IDBVT

INA293A2IDBVR

INA293A2IDBVT

INA293A3IDBVR

INA293A3IDBVT

INA293A4IDBVR

INA293A4IDBVT

INA293A5IDBVR

INA293A5IDBVT

INA293B1IDBVR

INA293B1IDBVT

INA293B2IDBVR

INA293B2IDBVT

INA293B3IDBVR

INA293B3IDBVT

INA293B4IDBVR

INA293B4IDBVT

SOT-23

DBV

3000

250

183.0

20.0

3000

250

3000

250

3000

250

3000

250

3000

250

3000

250

3000

250

3000

250

Pack Materials-Page 3

PACKAGE MATERIALS INFORMATION

www.ti.com

10-Aug-2022

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

INA293B5IDBVR

INA293B5IDBVT

SOT-23

DBV

3000

250

183.0

20.0

Pack Materials-Page 4

PACKAGE OUTLINE

DBV0005A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

3.0

2.6

0.1 C

1.75

1.45

0.90

PIN 1

INDEX AREA

(0.1)

2X 0.95

1.9

3.05

2.75

1.9

(0.15)

0.5

0.3

0.15

0.00

(1.1)

TYP

0.2

C A B

NOTE 5

0.25

GAGE PLANE

0.22

0.08

TYP

0.6

0.3

TYP

SEATING PLANE

4214839/G 03/2023

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. Refernce JEDEC MO-178.

4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed 0.25 mm per side.

5. Support pin may differ or may not be present.

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EXAMPLE BOARD LAYOUT

DBV0005A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

PKG

5X (1.1)

5X (0.6)

SYMM

(1.9)

2X (0.95)

(R0.05) TYP

(2.6)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:15X

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

METAL

EXPOSED METAL

0.07 MIN

ARROUND

0.07 MAX

ARROUND

NON SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

4214839/G 03/2023

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

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EXAMPLE STENCIL DESIGN

DBV0005A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

PKG

5X (1.1)

5X (0.6)

SYMM

(1.9)

2X(0.95)

(R0.05) TYP

(2.6)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:15X

4214839/G 03/2023

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

9. Board assembly site may have different recommendations for stencil design.

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