INA333AIDGKRG4 [TI]

Micro-Power (50mA), Zer?-Drift, Rail-to-Rail Out Instrumentation Amplifier; 微功率( 50毫安) ,泽尔? -Drift ,轨到轨输出仪表放大器
INA333AIDGKRG4
型号: INA333AIDGKRG4
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

Micro-Power (50mA), Zer?-Drift, Rail-to-Rail Out Instrumentation Amplifier
微功率( 50毫安) ,泽尔? -Drift ,轨到轨输出仪表放大器

仪表放大器
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INA333  
www.ti.com ..................................................................................................................................................... SBOS445BJULY 2008REVISED OCTOBER 2008  
Micro-Power (50µA), Zerø-Drift, Rail-to-Rail Out  
Instrumentation Amplifier  
1
FEATURES  
DESCRIPTION  
2
LOW OFFSET VOLTAGE: 25µV (max), G 100  
The INA333 is a low-power, precision instrumentation  
amplifier offering excellent accuracy. The versatile  
3-op amp design, small size, and low power make it  
ideal for a wide range of portable applications.  
LOW DRIFT: 0.1µV/°C, G 100  
LOW NOISE: 50nV/Hz, G 100  
HIGH CMRR: 100dB (min), G 10  
A single external resistor sets any gain from 1 to  
1000. The INA333 is designed to use an  
industry-standard gain equation: G = 1 + (100k/RG).  
LOW INPUT BIAS CURRENT: 200pA (max)  
SUPPLY RANGE: +1.8V to +5.5V  
INPUT VOLTAGE: (V–) +0.1V to (V+) –0.1V  
OUTPUT RANGE: (V–) +0.05V to (V+) –0.05V  
LOW QUIESCENT CURRENT: 50µA  
OPERATING TEMPERATURE: –40°C to +125°C  
RFI FILTERED INPUTS  
The INA333 provides very low offset voltage (25µV,  
G 100), excellent offset voltage drift (0.1µV/°C,  
G 100), and high common-mode rejection (100dB  
at G 10). It operates with power supplies as low as  
1.8V (±0.9V), and quiescent current is only  
50µA—ideal for battery-operated systems. Using  
autocalibration techniques to ensure excellent  
precision over the extended industrial temperature  
range, the INA333 also offers exceptionally low noise  
density (50nV/Hz) that extends down to dc.  
MSOP-8 AND DFN-8 PACKAGES  
APPLICATIONS  
BRIDGE AMPLIFIERS  
ECG AMPLIFIERS  
The INA333 is available in both MSOP-8 and DFN-8  
surface-mount packages and is specified over the  
TA = –40°C to +125°C temperature range.  
PRESSURE SENSORS  
MEDICAL INSTRUMENTATION  
PORTABLE INSTRUMENTATION  
WEIGH SCALES  
THERMOCOUPLE AMPLIFIERS  
RTD SENSOR AMPLIFIERS  
DATA ACQUISITION  
blank  
Sample Request  
Click Here  
V+  
7
2
VIN-  
RFI Filtered Inputs  
150kW  
150kW  
A1  
RFI Filtered Inputs  
1
50kW  
6
5
VOUT  
A3  
RG  
50kW  
8
RFI Filtered Inputs  
RFI Filtered Inputs  
150kW  
150kW  
REF  
A2  
3
VIN+  
INA333  
4
100kW  
V-  
G = 1 +  
RG  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2008, Texas Instruments Incorporated  
INA333  
SBOS445BJULY 2008REVISED OCTOBER 2008 ..................................................................................................................................................... www.ti.com  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more  
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.  
PACKAGE/ORDERING INFORMATION(1)  
PRODUCT  
PACKAGE-LEAD  
MSOP-8  
PACKAGE DESIGNATOR  
PACKAGE MARKING  
DGK  
DRG  
I333  
INA333  
DFN-8  
I333A  
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
ABSOLUTE MAXIMUM RATINGS(1)  
INA333  
+7  
UNIT  
V
Supply voltage  
Analog input voltage range(2)  
Output short-circuit(3)  
(V–) – 0.3 to (V+) + 0.3  
V
Continuous  
Operating temperature range, TA  
Storage temperature range, TA  
Junction temperature, TJ  
–40 to +150  
–65 to +150  
+150  
°C  
°C  
°C  
V
Human body model (HBM)  
4000  
ESD rating  
Charged device model (CDM)  
Machine model (MM)  
1000  
V
200  
V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may  
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond  
those specified is not implied.  
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3V beyond the supply rails should  
be current limited to 10mA or less.  
(3) Short-circuit to ground.  
PIN CONFIGURATIONS  
DGK PACKAGE  
DRG PACKAGE  
MSOP-8  
DFN-8  
(TOP VIEW)  
(TOP VIEW)  
RG  
VIN-  
VIN+  
V-  
RG  
1
2
3
4
8
7
6
5
RG  
VIN-  
VIN+  
V-  
RG  
1
2
3
4
8
7
6
5
Exposed  
Thermal  
Die Pad  
on  
V+  
V+  
VOUT  
VOUT  
Underside  
REF  
REF  
INA333  
INA333  
2
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INA333  
www.ti.com ..................................................................................................................................................... SBOS445BJULY 2008REVISED OCTOBER 2008  
ELECTRICAL CHARACTERISTICS: VS = +1.8V to +5.5V  
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.  
At TA = +25°C, RL = 10k, VREF = VS/2, and G = 1, unless otherwise noted.  
INA333  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
INPUT(1)  
Offset voltage, RTI(2)  
vs Temperature  
vs Power supply  
Long-term stability  
Turn-on time to specified VOSI  
Impedance  
VOSI  
PSR  
±10 ±25/G  
±25 ±75/G  
±0.1 ±0.5/G  
±5 ±15/G  
µV  
µV/°C  
µV/V  
1.8V VS 5.5V  
±1 ±5/G  
(3)  
See note  
See Typical characteristics  
Differential  
ZIN  
ZIN  
100 || 3  
100 || 3  
G|| pF  
G|| pF  
V
Common-mode  
Common-mode voltage range  
Common-mode rejection  
G = 1  
VCM  
CMR  
VO = 0V  
(V–) + 0.1  
(V+) – 0.1  
DC to 60Hz  
VCM = (V–) + 0.1V to (V+) – 0.1V  
VCM = (V–) + 0.1V to (V+) – 0.1V  
VCM = (V–) + 0.1V to (V+) – 0.1V  
VCM = (V–) + 0.1V to (V+) – 0.1V  
80  
90  
dB  
dB  
dB  
dB  
G = 10  
100  
100  
100  
110  
115  
115  
G = 100  
G = 1000  
INPUT BIAS CURRENT  
Input bias current  
vs Temperature  
Input offset current  
vs Temperature  
INPUT VOLTAGE NOISE  
Input voltage noise  
f = 10Hz  
IB  
±70  
±200  
pA  
pA/°C  
pA  
See Typical Characteristic curve  
±50 ±200  
IOS  
See Typical Characteristic curve  
pA/°C  
eNI  
G = 100, RS = 0Ω  
50  
50  
50  
1
nV/Hz  
nV/Hz  
nV/Hz  
µVPP  
f = 100Hz  
f = 1kHz  
f = 0.1Hz to 10Hz  
Input current noise  
f = 10Hz  
iN  
100  
2
fA/Hz  
f = 0.1Hz to 10Hz  
GAIN  
pAPP  
Gain equation  
Range of gain  
Gain error  
G
1 + (100k/RG)  
V/V  
V/V  
1
1000  
VS = 5.5V, (V–) + 100mV VO (V+) – 100mV  
G = 1  
±0.01  
±0.05  
±0.07  
±0.25  
±0.1  
±0.25  
±0.25  
±0.5  
%
%
%
%
G = 10  
G = 100  
G = 1000  
(1) Total VOS, Referred-to-input = (VOSI) + (VOSO/G).  
(2) RTI = Referred-to-input.  
(3) 300-hour life test at +150°C demonstrated randomly distributed variation of approximately 1µV.  
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INA333  
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ELECTRICAL CHARACTERISTICS: VS = +1.8V to +5.5V (continued)  
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.  
At TA = +25°C, RL = 10k, VREF = VS/2, and G = 1, unless otherwise noted.  
INA333  
PARAMETER  
GAIN (continued)  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Gain vs Temperature  
G = 1  
G > 1(4)  
±1  
±5  
ppm/°C  
ppm/°C  
±15  
±50  
Gain nonlinearity  
G = 1 to 1000  
OUTPUT  
VS = 5.5V, (V–) + 100mV VO (V+) – 100mV  
RL = 10kΩ  
10  
ppm  
(5)  
Output voltage swing from rail(5)  
Capacitive load drive  
Short-circuit current  
FREQUENCY RESPONSE  
Bandwidth, –3dB  
G = 1  
VS = 5.5V, RL = 10kΩ  
See note  
500  
50  
mV  
pF  
ISC  
Continuous to common  
–40, +5  
mA  
150  
35  
kHz  
kHz  
kHz  
Hz  
G = 10  
G = 100  
3.5  
350  
G = 1000  
Slew rate  
SR  
tS  
VS = 5V, VO = 4V Step  
G = 1  
0.16  
0.05  
V/µs  
V/µs  
G = 100  
Settling time to 0.01%  
G = 1  
VSTEP = 4V  
VSTEP = 4V  
50  
µs  
µs  
G = 100  
400  
Settling time to 0.001%  
G = 1  
tS  
VSTEP = 4V  
VSTEP = 4V  
60  
500  
75  
µs  
µs  
µs  
G = 100  
Overload recovery  
REFERENCE INPUT  
RIN  
50% overdrive  
300  
kΩ  
Voltage range  
POWER SUPPLY  
Voltage range  
Single  
V–  
V+  
V
+1.8  
±0.9  
+5.5  
±2.75  
75  
V
V
Dual  
Quiescent current  
vs Temperature  
TEMPERATURE RANGE  
Specified temperature range  
Operating temperature range  
Thermal resistance  
MSOP  
IQ  
VIN = VS/2  
50  
µA  
µA  
80  
–40  
–40  
+125  
+150  
°C  
°C  
θJA  
100  
65  
°C/W  
°C/W  
DFN  
(4) Does not include effects of external resistor RG.  
(5) See Typical Characteristics curve, Output Voltage Swing vs Output Current (Figure 29).  
4
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INA333  
www.ti.com ..................................................................................................................................................... SBOS445BJULY 2008REVISED OCTOBER 2008  
TYPICAL CHARACTERISTICS  
At TA = +25°C, VS = 5V, RL = 10k, VREF = midsupply, and G = 1, unless otherwise noted.  
INPUT VOLTAGE OFFSET DRIFT  
INPUT OFFSET VOLTAGE  
(–40°C to +125°C)  
VS = 5.5V  
VS = 5.5V  
Input Offset Voltage (mV)  
Input Voltage Offset Drift (mV/°C)  
Figure 1.  
Figure 2.  
OUTPUT VOLTAGE OFFSET DRIFT  
(–40°C to +125°C)  
OUTPUT OFFSET VOLTAGE  
VS = 5.5V  
VS = 5.5V  
Output Offset Voltage (mV)  
Output Voltage Offset Drift (mV/°C)  
Figure 3.  
Figure 4.  
OFFSET VOLTAGE vs COMMON-MODE VOLTAGE  
0.1Hz TO 10Hz NOISE  
0
-5  
Gain = 1  
VS = 1.8V  
VS = 5V  
-10  
-15  
-20  
-25  
Time (1s/div)  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
VCM (V)  
Figure 5.  
Figure 6.  
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INA333  
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TYPICAL CHARACTERISTICS (continued)  
At TA = +25°C, VS = 5V, RL = 10k, VREF = midsupply, and G = 1, unless otherwise noted.  
0.1Hz TO 10Hz NOISE  
SPECTRAL NOISE DENSITY  
1000  
100  
10  
1000  
100  
10  
Gain = 100  
Output Noise  
Current Noise  
Input Noise  
2
(Output Noise)  
G
Total Input-Referred Noise =  
(Input Noise)2  
+
1
1
0.1  
1
10  
100  
Frequency (Hz)  
Figure 8.  
1k  
10k  
Time (1s/div)  
Figure 7.  
NONLINEARITY ERROR  
LARGE SIGNAL RESPONSE  
0.012  
0.008  
0.004  
0
Gain = 1  
G = 1000  
VS = ±2.75V  
G = 100  
G = 10  
G = 1  
-0.004  
-0.008  
-0.012  
Time (25ms/div)  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
VOUT (V)  
Figure 9.  
Figure 10.  
LARGE-SIGNAL STEP RESPONSE  
SMALL-SIGNAL STEP RESPONSE  
Gain = 100  
Gain = 1  
Time (100ms/div)  
Time (10ms/div)  
Figure 11.  
Figure 12.  
6
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INA333  
www.ti.com ..................................................................................................................................................... SBOS445BJULY 2008REVISED OCTOBER 2008  
TYPICAL CHARACTERISTICS (continued)  
At TA = +25°C, VS = 5V, RL = 10k, VREF = midsupply, and G = 1, unless otherwise noted.  
SMALL-SIGNAL STEP RESPONSE  
SETTLING TIME vs GAIN  
10000  
1000  
100  
Gain = 100  
0.001%  
0.01%  
0.1%  
10  
Time (100ms/div)  
1
10  
100  
1000  
Gain (V/V)  
Figure 13.  
Figure 14.  
STARTUP SETTLING TIME  
GAIN vs FREQUENCY  
80  
60  
Gain = 1  
G = 1000  
Supply  
G = 100  
G = 10  
40  
VOUT  
20  
G = 1  
0
-20  
-40  
-60  
Time (50ms/div)  
10  
100  
1k  
10k  
100k  
1M  
Frequency (Hz)  
Figure 15.  
Figure 16.  
COMMON-MODE REJECTION RATIO  
COMMON-MODE REJECTION RATIO vs TEMPERATURE  
10  
VS = ±2.75V  
VS = 5.5V  
8
G = 1  
VS = ±0.9V  
6
4
G = 10  
2
0
-2  
-4  
-6  
-8  
-10  
G = 100,  
G = 1000  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature (°C)  
CMRR (mV/V)  
Figure 17.  
Figure 18.  
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INA333  
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TYPICAL CHARACTERISTICS (continued)  
At TA = +25°C, VS = 5V, RL = 10k, VREF = midsupply, and G = 1, unless otherwise noted.  
COMMON-MODE REJECTION RATIO vs FREQUENCY  
160  
TYPICAL COMMON-MODE RANGE vs OUTPUT VOLTAGE  
2.5  
VS = ±2.5V  
2.0  
140  
120  
100  
80  
VREF = 0  
G = 1000  
G = 100  
1.0  
All Gains  
0
60  
G = 1  
-1.0  
40  
G = 10  
20  
-2.0  
2.5  
0
10  
100  
1k  
10k  
100k  
-2.5 -2.0  
-1.0  
0
1.0  
2.0 2.5  
Frequency (Hz)  
Output Voltage (V)  
Figure 20.  
Figure 19.  
TYPICAL COMMON-MODE RANGE vs OUTPUT VOLTAGE  
TYPICAL COMMON-MODE RANGE vs OUTPUT VOLTAGE  
0.9  
VS = ±0.9V  
5
VS = +5V  
0.7  
VREF = 0  
VREF = 0  
4
0.5  
0.3  
3
0.1  
All Gains  
All Gains  
-0.1  
-0.3  
-0.5  
-0.7  
-0.9  
2
1
0
0
1
2
3
4
5
-0.9  
-0.5 -0.3 -0.1 0.1 0.3  
Output Voltage (V)  
Figure 22.  
0.5  
0.7  
0.9  
-0.7  
Output Voltage (V)  
Figure 21.  
TYPICAL COMMON-MODE RANGE vs OUTPUT VOLTAGE  
1.8  
VS = +1.8V  
POSITIVE POWER-SUPPLY REJECTION RATIO  
160  
140  
120  
100  
80  
1.6  
VREF = 0  
G = 1000  
1.4  
1.2  
G = 100  
1.0  
All Gains  
0.8  
0.6  
0.4  
0.2  
0
60  
G = 10  
G = 1  
40  
20  
0
0
0.2  
0.4  
0.5  
0.8  
1.0 1.2  
1.4  
1.6  
1.8  
1
10  
100  
1k  
10k  
100k  
1M  
Output Voltage (V)  
Frequency (Hz)  
Figure 24.  
Figure 23.  
8
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INA333  
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TYPICAL CHARACTERISTICS (continued)  
At TA = +25°C, VS = 5V, RL = 10k, VREF = midsupply, and G = 1, unless otherwise noted.  
NEGATIVE POWER-SUPPLY REJECTION RATIO  
INPUT BIAS CURRENT vs TEMPERATURE  
160  
140  
120  
100  
80  
1200  
1000  
800  
600  
400  
200  
0
VS = 5V  
+IB  
-IB  
G = 100  
G = 1000  
G = 10  
60  
V
= ±0.9V  
V
= ±2.75V  
S
S
40  
G = 1  
20  
0
-200  
-20  
0.1  
1
10  
100  
1k  
10k  
100k  
1M  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Frequency (Hz)  
Temperature (°C)  
Figure 25.  
Figure 26.  
| INPUT BIAS CURRENT | vs COMMON-MODE VOLTAGE  
200  
INPUT OFFSET CURRENT vs TEMPERATURE  
250  
200  
150  
100  
50  
180  
160  
140  
120  
100  
80  
V
V
= ±2.75V  
= ±0.9V  
S
60  
0
VS = 5V  
S
40  
-50  
-100  
20  
VS = 1.8V  
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCM (V)  
Temperature (°C)  
Figure 27.  
Figure 28.  
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT  
(V+)  
QUIESCENT CURRENT vs TEMPERATURE  
80  
70  
60  
50  
40  
30  
20  
10  
0
VS = ±2.75V  
VS = ±0.9V  
(V+) - 0.25  
(V+) - 0.50  
(V+) - 0.75  
(V+) - 1.00  
(V+) - 1.25  
(V+) - 1.50  
(V+) - 1.75  
VS = 5V  
(V-) + 1.75  
(V-) + 1.50  
(V-) + 1.25  
(V-) + 1.00  
(V-) + 0.75  
(V-) + 0.50  
(V-) + 0.25  
(V-)  
VS = 1.8V  
+125°C  
+25°C  
-40°C  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
Temperature (°C)  
IOUT (mA)  
Figure 29.  
Figure 30.  
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TYPICAL CHARACTERISTICS (continued)  
At TA = +25°C, VS = 5V, RL = 10k, VREF = midsupply, and G = 1, unless otherwise noted.  
QUIESCENT CURRENT vs COMMON-MODE VOLTAGE  
80  
70  
VS = 5V  
60  
50  
40  
VS = 1.8V  
30  
20  
10  
0
0
1.0  
2.0  
3.0  
4.0  
5.0  
VCM (V)  
Figure 31.  
10  
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INA333  
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APPLICATION INFORMATION  
Figure 32 shows the basic connections required for  
operation of the INA333. Good layout practice  
mandates the use of bypass capacitors placed close  
to the device pins as shown.  
Table 1 lists several commonly-used gains and  
resistor values. The 100kterm in Equation 1 comes  
from the sum of the two internal feedback resistors of  
A1 and A2. These on-chip resistors are laser trimmed  
to accurate absolute values. The accuracy and  
temperature coefficient of these resistors are included  
in the gain accuracy and drift specifications of the  
INA333.  
The output of the INA333 is referred to the output  
reference (REF) terminal, which is normally  
grounded. This connection must be low-impedance to  
assure good common-mode rejection. Although 15Ω  
or less of stray resistance can be tolerated while  
maintaining specified CMRR, small stray resistances  
of tens of ohms in series with the REF pin can cause  
noticeable degradation in CMRR.  
The stability and temperature drift of the external gain  
setting resistor, RG, also affects gain. The contribution  
of RG to gain accuracy and drift can be directly  
inferred from the gain Equation 1. Low resistor values  
required for high gain can make wiring resistance  
important. Sockets add to the wiring resistance and  
contribute additional gain error (possibly an unstable  
gain error) in gains of approximately 100 or greater.  
To ensure stability, avoid parasitic capacitance of  
more than a few picofarads at the RG connections.  
Careful matching of any parasitics on both RG pins  
maintains optimal CMRR over frequency.  
SETTING THE GAIN  
Gain of the INA333 is set by a single external  
resistor, RG, connected between pins 1 and 8. The  
value of RG is selected according to Equation 1:  
G = 1 + (100k/RG)  
(1)  
V+  
0.1mF  
7
2
1
RFI Filter  
RFI Filter  
VIN-  
150kW  
150kW  
A1  
VO = G ´ (VIN+ - VIN-  
)
100kW  
50kW  
G = 1 +  
RG  
6
5
RG  
A3  
50kW  
+
8
3
VO  
Load  
-
RFI Filter  
RFI Filter  
150kW  
150kW  
A2  
VIN+  
Ref  
INA333  
4
0.1mF  
V-  
Also drawn in simplified form:  
VIN-  
RG  
VO  
INA333  
Ref  
VIN+  
Figure 32. Basic Connections  
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Table 1. Commonly-Used Gains and Resistor Values  
DESIRED GAIN  
RG ()  
NC(1)  
100k  
NEAREST 1% RG ()  
1
2
NC  
100k  
24.9k  
11k  
5
25k  
10  
11.1k  
5.26k  
2.04k  
1.01k  
502.5  
200.4  
100.1  
20  
5.23k  
2.05  
1k  
50  
100  
200  
500  
1000  
499  
200  
100  
(1) NC denotes no connection. When using the SPICE model, the simulation will not converge unless a resistor is connected to the RG pins;  
use a very large resistor value.  
NOISE PERFORMANCE  
INTERNAL OFFSET CORRECTION  
The auto-calibration technique used by the INA333  
results in reduced low frequency noise, typically only  
50nV/Hz, (G = 100). The spectral noise density can  
be seen in detail in Figure 8. Low frequency noise of  
the INA333 is approximately 1µVPP measured from  
0.1Hz to 10Hz, (G = 100).  
The INA333 internal op amps use an auto-calibration  
technique with a time-continuous 350kHz op amp in  
the signal path. The amplifier is zero-corrected every  
8µs using a proprietary technique. Upon power-up,  
the amplifier requires approximately 100µs to achieve  
specified VOS accuracy. This design has no aliasing  
or flicker noise.  
INPUT BIAS CURRENT RETURN PATH  
OFFSET TRIMMING  
The input impedance of the INA333 is extremely  
high—approximately 100G. However, a path must  
be provided for the input bias current of both inputs.  
This input bias current is typically ±70pA. High input  
impedance means that this input bias current  
changes very little with varying input voltage.  
Most applications require no external offset  
adjustment; however, if necessary, adjustments can  
be made by applying a voltage to the REF terminal.  
Figure 33 shows an optional circuit for trimming the  
output offset voltage. The voltage applied to REF  
terminal is summed at the output. The op amp buffer  
provides low impedance at the REF terminal to  
preserve good common-mode rejection.  
Input circuitry must provide a path for this input bias  
current for proper operation. Figure 34 illustrates  
various provisions for an input bias current path.  
Without a bias current path, the inputs will float to a  
potential that exceeds the common-mode range of  
the INA333, and the input amplifiers will saturate. If  
the differential source resistance is low, the bias  
current return path can be connected to one input  
(see the thermocouple example in Figure 34). With  
higher source impedance, using two equal resistors  
provides a balanced input with possible advantages  
of lower input offset voltage as a result of bias current  
and better high-frequency common-mode rejection.  
mIN-  
m+  
RG  
mO  
INA333  
Ref  
100mA  
1/2 REF200  
mIN+  
100W  
100W  
OPA333  
10ꢀm  
Adjustꢀent Range  
10kW  
100mA  
1/2 REF200  
m-  
Figure 33. Optional Trimming of Output Offset  
Voltage  
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INA333  
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OPERATING VOLTAGE  
The INA333 operates over a power-supply range of  
Microphone,  
Hydrophone,  
etc.  
INA333  
+1.8V to +5.5V (±0.9V to ±2.75V). Supply voltages  
higher than +7V (absolute maximum) can  
permanently damage the device. Parameters that  
vary over supply voltage or temperature are shown in  
the Typical Characteristics section of this data sheet.  
47kW  
47kW  
LOW VOLTAGE OPERATION  
The INA333 can be operated on power supplies as  
low as ±0.9V. Most parameters vary only slightly  
throughout this supply voltage range—see the Typical  
Characteristics section. Operation at very low supply  
voltage requires careful attention to assure that the  
input voltages remain within the linear range. Voltage  
swing requirements of internal nodes limit the input  
common-mode range with low power-supply voltage.  
Thermocouple  
INA333  
10kW  
The  
Typical  
Characteristic  
curves  
Typical  
Common-Mode Range vs Output Voltage (Figure 20  
to Figure 23) show the range of linear operation for  
various supply voltages and gains.  
INA333  
SINGLE-SUPPLY OPERATION  
Center tap provides  
bias current return.  
The INA333 can be used on single power supplies of  
+1.8V to +5.5V. Figure 35 illustrates  
a basic  
Figure 34. Providing an Input Common-Mode  
Current Path  
single-supply circuit. The output REF terminal is  
connected to mid-supply. Zero differential input  
voltage demands an output voltage of mid-supply.  
Actual output voltage swing is limited to  
approximately 50mV above ground, when the load is  
referred to ground as shown. The typical  
characteristic curve Output Voltage Swing vs Output  
Current (Figure 29) shows how the output voltage  
swing varies with output current.  
INPUT COMMON-MODE RANGE  
The linear input voltage range of the input circuitry of  
the INA333 is from approximately 0.1V below the  
positive supply voltage to 0.1V above the negative  
supply. As a differential input voltage causes the  
output voltage to increase, however, the linear input  
range is limited by the output voltage swing of  
amplifiers A1 and A2. Thus, the linear common-mode  
input range is related to the output voltage of the  
complete amplifier. This behavior also depends on  
supply voltage—see Typical Characteristic curves  
Typical Common-Mode Range vs Output Voltage  
(Figure 20 to Figure 23).  
With single-supply operation, VIN+ and VIN– must both  
be 0.1V above ground for linear operation. For  
instance, the inverting input cannot be connected to  
ground to measure a voltage connected to the  
noninverting input.  
To illustrate the issues affecting low voltage  
operation, consider the circuit in Figure 35. It shows  
the INA333 operating from a single 3V supply. A  
resistor in series with the low side of the bridge  
assures that the bridge output voltage is within the  
common-mode range of the amplifier inputs.  
Input overload conditions can produce an output  
voltage that appears normal. For example, if an input  
overload condition drives both input amplifiers to the  
respective positive output swing limit, the difference  
voltage measured by the output amplifier is near  
zero. The output of the INA333 is near 0V even  
though both inputs are overloaded.  
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INA333  
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GENERAL LAYOUT GUIDELINES  
+3V  
3V  
Attention to good layout practices is always  
recommended. Keep traces short and, when  
possible, use a printed circuit board (PCB) ground  
plane with surface-mount components placed as  
close to the device pins as possible. Place a 0.1µF  
bypass capacitor closely across the supply pins.  
These guidelines should be applied throughout the  
analog circuit to improve performance and provide  
2V - DV  
RG  
VO  
INA333  
300W  
Ref  
1.5V  
2V + DV  
150W  
(1)  
R1  
benefits  
such  
as  
reducing  
the  
electromagnetic-interference (EMI) susceptibility.  
(1) R1 creates proper common-mode voltage, only for low-voltage  
operation—see the Single-Supply Operation section.  
Instrumentation amplifiers vary in the susceptibility to  
radio-frequency interference (RFI). RFI can generally  
be identified as a variation in offset voltage or dc  
signal levels with changes in the interfering RF signal.  
The INA333 has been specifically designed to  
minimize susceptibility to RFI by incorporating  
passive RC filters with an 8MHz corner frequency at  
the VIN+ and VIN– inputs. As a result, the INA333  
demonstrates remarkably low sensitivity compared to  
previous generation devices. Strong RF fields may  
continue to cause varying offset levels, however, and  
may require additional shielding.  
Figure 35. Single-Supply Bridge Amplifier  
INPUT PROTECTION  
The input terminals of the INA333 are protected with  
internal diodes connected to the power-supply rails.  
These diodes clamp the applied signal to prevent it  
from damaging the input circuitry. If the input signal  
voltage can exceed the power supplies by more than  
0.3V, the input signal current should be limited to less  
than 10mA to protect the internal clamp diodes. This  
current limiting can generally be done with a series  
input resistor. Some signal sources are inherently  
current-limited and do not require limiting resistors.  
APPLICATION IDEAS  
Additional application ideas are shown in Figure 36 to  
Figure 39.  
2.8kW  
VO  
LA  
RG/2  
INA333  
Ref  
RA  
2.8kW  
G = 10  
390kW  
1/2  
OPA2333  
1/2  
10kW  
RL  
OPA2333  
390kW  
Figure 36. ECG Amplifier With Right-Leg Drive  
14  
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+VS  
fLPF = 150Hz  
C4  
R1  
1/2  
1.06nF  
100kW  
OPA2333  
RA  
R14  
GTOT = 1kV/V  
1MW  
R7  
+VS  
7
100kW  
+VS  
2
1
GINA = 5  
6
R12  
R6  
+VS  
5kW  
100kW  
R2  
1/2  
RG  
INA333  
100kW  
OPA2333  
8
3
VOUT  
GOPA = 200  
OPA333  
LL  
4
C3  
5
1mF  
R13  
R8  
318kW  
100kW  
+VS  
+VS  
dc  
ac  
R3  
1/2  
100kW  
1/2  
OPA2333  
Wilson  
OPA2333  
LA  
VCENTRAL  
C1  
(RA + LA + LL)/3  
47pF  
fHPF = 0.5Hz  
(provides ac signal coupling)  
1/2 VS  
R5  
390kW  
+VS  
VS = +2.7V to +5.5V  
BW = 0.5Hz to 150Hz  
R9  
+VS  
20kW  
R4  
1/2  
100kW  
OPA2333  
1/2  
RL  
OPA2333  
Inverted  
VCM  
+VS  
R10  
1MW  
1/2 VS  
R11  
C2  
1MW  
0.64mF  
fO = 0.5Hz  
Figure 37. Single-Supply, Very Low Power, ECG Circuit  
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INA333  
SBOS445BJULY 2008REVISED OCTOBER 2008 ..................................................................................................................................................... www.ti.com  
TINA-TI  
Virtual instruments offer users the ability to select  
input waveforms and probe circuit nodes, voltages,  
and waveforms, creating a dynamic quick-start tool.  
(FREE DOWNLOAD SOFTWARE)  
Using TINA-TI SPICE-Based Analog Simulation  
Program with the INA333  
Figure 38 and Figure 39 show example TINA-TI  
circuits for the INA333 that can be used to develop,  
modify, and assess the circuit design for specific  
applications. Links to download these simulation files  
are given below.  
TINA is a simple, powerful, and easy-to-use circuit  
simulation program based on a SPICE engine.  
TINA-TI is a free, fully functional version of the TINA  
software, preloaded with a library of macromodels in  
addition to a range of both passive and active  
models. It provides all the conventional dc, transient,  
and frequency domain analysis of SPICE as well as  
additional design capabilities.  
NOTE: these files require that either the TINA  
software (from DesignSoft) or TINA-TI software be  
installed. Download the free TINA-TI software from  
the TINA-TI folder.  
Available as a free download from the Analog eLab  
Design  
Center,  
TINA-TI  
offers  
extensive  
post-processing capability that allows users to format  
results in a variety of ways.  
VoA1  
1/2 of matched  
monolithic dual  
RELATED PRODUCTS  
NPN transistors  
(example: MMDT3904)  
For monolithic logarithmic amplifiers (such as LOG112 or LOG114) see the link in footnote 1.  
Vout  
2
_
4
U1 INA333  
3
V-  
RG  
2
-
-
R8 10k  
+
1
8
Out  
6
+
1
V
Input I 10n  
Ref  
5
4
+
+
+
VM1  
RG  
V+  
5
U1 OPA335  
U5 OPA369  
+
3
7
Vdiff  
Optional buffer for driving  
SAR converters with  
sampling systems of ³ 33kHz.  
1/2 of matched  
monolithic dual  
NPN transistors  
(example: MMDT3904)  
VoA2  
V1 5  
Rset 2.5M  
uC Vref/2 2.5  
3
1
2
-
+
NOTE: Temperature compensation  
of logging transistors is not shown.  
+
4
5
U6 OPA369  
(1) The following link launches the TI logarithmic amplifiers web page: Logarithmic Amplifier Products Home Page  
Figure 38. Low-Power Log Function Circuit for Portable Battery-Powered Systems  
(Example Glucose Meter)  
To download a compressed file that contains the TINA-TI simulation file for this circuit, click the following link:  
Log Circuit.  
16  
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INA333  
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3V  
R1  
2kW  
RWa  
3W  
EMU21 RTD3  
Pt100 RTD  
-
U2  
OPA333  
RWb  
3W  
+
+
2
VT+  
RTD+  
_
4
U1 INA333  
Out  
VT 25  
3V  
V-  
RG  
VT-  
RTD-  
VDIFF  
1
8
MSP430  
RGAIN  
PGA112  
Mon+ Mon-  
100kW  
Ref  
6
RG  
+
V+  
RWc  
4W  
5
RZERO  
100W  
3
7
Temp (°C)  
+
V
(Volts = °C)  
VREF+  
3V  
VRTD  
RWd  
3W  
RTD Resistance  
(Volts = Ohms)  
+
+
IREF1  
IREF2  
A
A
3V  
VREF  
3V  
VREF  
VREF  
U1 REF3212  
Use BF861A  
T3 BF256A  
S
3V  
Use BF861A  
T1 BF256A  
EN  
In  
OUTF  
OUTS  
+
+
+
+
OPA3331 OPA333  
GNDF GNDS  
U3  
OPA333  
3V  
C7  
-
G
-
470nF  
V4 3  
RSET2  
RSET1  
2.5kW  
2.5kW  
RWa, RWb, RWc, and RWd simulate wire resistance. These resistors are included to show the four-wire sense technique immunity to line  
mismatches. This method assumes the use of a four-wire RTD.  
Figure 39. Four-Wire, 3V Conditioner for a PT100 RTD With Programmable Gain Acquisition System  
To download a compressed file that contains the TINA-TI simulation file for this circuit, click the following link:  
PT100 RTD.  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
8-Jun-2009  
PACKAGING INFORMATION  
Orderable Device  
INA333AIDGKR  
INA333AIDGKRG4  
INA333AIDGKT  
INA333AIDGKTG4  
INA333AIDRGR  
INA333AIDRGT  
Status (1)  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
Drawing  
MSOP  
DGK  
8
8
8
8
8
8
2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
MSOP  
MSOP  
MSOP  
SON  
DGK  
DGK  
DGK  
DRG  
DRG  
2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
1000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
SON  
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and  
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS  
compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is  
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the  
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take  
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on  
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited  
information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI  
to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
10-Jun-2009  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0 (mm)  
B0 (mm)  
K0 (mm)  
P1  
W
Pin1  
Diameter Width  
(mm) W1 (mm)  
(mm) (mm) Quadrant  
INA333AIDGKR  
INA333AIDGKT  
INA333AIDRGR  
MSOP  
MSOP  
SON  
DGK  
DGK  
DRG  
8
8
8
2500  
250  
330.0  
180.0  
330.0  
12.4  
12.4  
12.4  
5.3  
5.3  
3.3  
3.3  
3.3  
3.3  
1.3  
1.3  
1.1  
8.0  
8.0  
8.0  
12.0  
12.0  
12.0  
Q1  
Q1  
Q2  
1000  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
10-Jun-2009  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
INA333AIDGKR  
INA333AIDGKT  
INA333AIDRGR  
MSOP  
MSOP  
SON  
DGK  
DGK  
DRG  
8
8
8
2500  
250  
370.0  
195.0  
346.0  
355.0  
200.0  
346.0  
55.0  
45.0  
29.0  
1000  
Pack Materials-Page 2  
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the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.  
TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are  
designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated  
products in automotive applications, TI will not be responsible for any failure to meet such requirements.  
Following are URLs where you can obtain information on other Texas Instruments products and application solutions:  
Products  
Amplifiers  
Applications  
Audio  
Automotive  
Broadband  
Digital Control  
Medical  
Military  
Optical Networking  
Security  
amplifier.ti.com  
dataconverter.ti.com  
www.dlp.com  
www.ti.com/audio  
Data Converters  
DLP® Products  
DSP  
Clocks and Timers  
Interface  
www.ti.com/automotive  
www.ti.com/broadband  
www.ti.com/digitalcontrol  
www.ti.com/medical  
www.ti.com/military  
www.ti.com/opticalnetwork  
www.ti.com/security  
www.ti.com/telephony  
www.ti.com/video  
dsp.ti.com  
www.ti.com/clocks  
interface.ti.com  
logic.ti.com  
power.ti.com  
microcontroller.ti.com  
www.ti-rfid.com  
Logic  
Power Mgmt  
Microcontrollers  
RFID  
Telephony  
Video & Imaging  
Wireless  
RF/IF and ZigBee® Solutions www.ti.com/lprf  
www.ti.com/wireless  
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2009, Texas Instruments Incorporated  

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