INA4290A3IRGVR [TI]
INAx290 2.7-V to 120-V, 1.1-MHz, Ultra-Precise, Current-Sense Amplifier;
| 型号： | INA4290A3IRGVR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | INAx290 2.7-V to 120-V, 1.1-MHz, Ultra-Precise, Current-Sense Amplifier |
| 文件： | 总37页 (文件大小：2270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INA290, INA2290, INA4290
SBOS961C – JUNE 2020 – REVISED JUNE 2021
INAx290 2.7-V to 120-V, 1.1-MHz, Ultra-Precise, Current-Sense Amplifier
1 Features
3 Description
•
•
•
Wide common-mode voltage:
– Operational voltage: 2.7 V to 120 V
– Survival voltage: −20 V to +122 V
Excellent CMRR:
– 160-dB DC
– 85-dB AC at 50 kHz
Accuracy
The INAx290 is an ultra-precise, current-sense
amplifier that can measure voltage drops across shunt
resistors over a wide common-mode range from 2.7
V to 120 V. The ultra-precise current measurement
accuracy is achieved thanks to the combination of an
ultra-low offset voltage of ±12 µV (maximum), a small
gain error of ±0.1% (maximum), and a high DC CMRR
of 160 dB (typical). The INAx290 is not only designed
for DC current measurement, but also for high-speed
applications (such as fast overcurrent protection, for
example) with a high bandwidth of 1.1 MHz (at gain of
20 V/V) and an 85-dB AC CMRR (at 50 kHz).
– Gain:
•
•
Gain error: ±0.1% (maximum)
Gain drift: ±5 ppm/°C (maximum)
– Offset:
•
•
Offset voltage: ±12 µV (maximum)
Offset drift: ±0.2 µV/°C (maximum)
The INAx290 provides the capability to make ultra-
precise current measurements by sensing the voltage
drop across a shunt resistor over a wide common-
mode range from 2.7 V to 120 V. The INAx290
devices come in highly space-efficient packages.
The single-channel INA290 device is featured in the
SC-70 package, the dual-channel INA2290 device
is available in the MSOP-8 package, and the quad-
channel INA4290 device is available in the 4 mm x 4
mm QFN package.
•
Available gains:
– A1 devices: 20 V/V
– A2 devices: 50 V/V
– A3 devices: 100 V/V
– A4 devices: 200 V/V
– A5 devices: 500 V/V
High bandwidth: 1.1 MHz
Slew rate: 2 V/µs
•
•
•
Quiescent current: 370 µA (per channel)
The INAx290 operates from a single 2.7-V to 20-V
supply with the single channel device only drawing
370-µA supply current per channel (typical). The
devices are available with five gain options: 20 V/V,
50 V/V, 100 V/V, 200 V/V, and 500 V/V. The low offset
of the zero-drift architecture enables current sensing
with low ohmic shunts as specified over the extended
operating temperature range (−40°C to +125°C).
2 Applications
•
•
•
•
•
Active antenna system mMIMO (AAS)
Macro remote radio unit (RRU)
48-V rack server
48-V merchant network & server power supply
Test and measurement
VS
Device Information(1)
INA4290 (quad channel)
VCM
INA2290 (dual channel)
INA290 (single channel)
PART NUMBER
INA290
PACKAGE
BODY SIZE (NOM)
2.00 mm × 1.25 mm
3.00 mm × 3.00 mm
4.00 mm × 4.00 mm
SC-70 (5)
ISENSE
R1
IN+
œ
INA2290
INA4290
VSSOP (8)
QFN (16)
Current
Feedback
RSENSE
Bias
R1
+
OUT
INœ
Buffer
SAR
ADC
(1) For all available packages, see the package option
addendum at the end of the data sheet.
Load
RL
GND
Typical Application
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA290, INA2290, INA4290
SBOS961C – JUNE 2020 – REVISED JUNE 2021
www.ti.com
Table of Contents
1 Features............................................................................1
2 Applications.....................................................................1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions ..................................3
6 Specifications.................................................................. 5
6.1 Absolute Maximum Ratings ....................................... 5
6.2 ESD Ratings .............................................................. 5
6.3 Recommended Operating Conditions ........................5
6.4 Thermal Information ...................................................5
6.5 Electrical Characteristics.............................................6
6.6 Typical Characteristics................................................7
7 Detailed Description......................................................15
7.1 Overview...................................................................15
7.2 Functional Block Diagram.........................................15
7.3 Feature Description...................................................16
7.4 Device Functional Modes..........................................18
8 Application and Implementation..................................19
8.1 Application Information............................................. 19
8.2 Typical Application.................................................... 21
9 Power Supply Recommendations................................23
10 Layout...........................................................................23
10.1 Layout Guidelines................................................... 23
10.2 Layout Examples.................................................... 23
11 Device and Documentation Support..........................26
11.1 Documentation Support.......................................... 26
11.2 Receiving Notification of Documentation Updates..26
11.3 Support Resources................................................. 26
11.4 Trademarks............................................................. 26
11.5 Electrostatic Discharge Caution..............................26
11.6 Glossary..................................................................26
12 Mechanical, Packaging, and Orderable
Information.................................................................... 26
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (December 2020) to Revision C (June 2021)
Page
•
Added INA4290 device information to the document......................................................................................... 1
Changes from Revision A (September 2020) to Revision B (December 2020)
Page
•
•
Changed the INA2290 device status from Advanced Information to Production Data....................................... 1
Added Channel Separation vs. Frequency, Multichannel Devices .................................................................... 7
Changes from Revision * (June 2020) to Revision A (August 2020)
Page
Changed the data sheet status from Production Data to Production Mixed.......................................................1
Added INA2290 advanced information to the document.................................................................................... 1
•
•
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5 Pin Configuration and Functions
OUT
GND
VS
1
2
3
5
INœ
4
IN+
Not to scale
Figure 5-1. INA290: DCK Package 5-Pin SC-70 Top View
Table 5-1. Pin Functions: INA290 (Single Channel)
PIN
TYPE
DESCRIPTION
NAME
NO.
GND
IN–
2
5
4
1
Ground
Input
Ground
Connect to load side of shunt resistor.
Connect to supply side of shunt resistor.
Output voltage
IN+
Input
OUT
Output
VS
3
Power
Power supply
IN+1
VS
IN-1
OUT1
IN+2
IN-2
OUT2
GND
Figure 5-2. INA2290: DGK Package 8-Pin VSSOP Top View
Table 5-2. Pin Functions: INA2290 (Dual Channel)
PIN
TYPE
DESCRIPTION
NAME
NO.
GND
5
Ground
Input
Ground
Current-sense amplifier negative input for channel 1. Connect to load side of channel 1
sense resistor.
IN–1
IN+1
IN–2
IN+2
2
1
4
3
Current-sense amplifier positive input for channel 1. Connect to bus-voltage side of
channel 1 sense resistor.
Input
Input
Input
Current-sense amplifier negative input for channel 2. Connect to load side of channel 2
sense resistor.
Current-sense amplifier positive input for channel 2. Connect to bus-voltage side of
channel 2 sense resistor.
OUT1
OUT2
7
6
8
Output
Output
Power
Channel 1 output voltage
Channel 2 output voltage
Power supply
VS
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IN+1
IN–1
IN+2
IN–2
1
2
3
4
12
11
10
9
IN+3
IN–3
IN+4
IN–4
Thermal
Pad
Not to scale
A. Thermal Pad can be left floating or connected to GND.
Figure 5-3. INA4290: RGV Package 16-Pin QFN Top View
Table 5-3. Pin Functions: INA4290 (Quad Channel)
PIN
TYPE
DESCRIPTION
NAME
NO.
GND
6, 7
Ground
Input
Ground
Current-sense amplifier negative input for channel 1. Connect to load side of channel-1
sense resistor.
IN–1
IN+1
IN–2
IN+2
IN–3
IN+3
IN–4
IN+4
2
1
Current-sense amplifier positive input for channel 1. Connect to bus-voltage side of
channel-1 sense resistor.
Input
Input
Input
Input
Input
Input
Input
Current-sense amplifier negative input for channel 2. Connect to load side of channel-2
sense resistor.
4
Current-sense amplifier positive input for channel 2. Connect to bus-voltage side of
channel-2 sense resistor.
3
Current-sense amplifier negative input for channel 3. Connect to load side of channel-3
sense resistor.
11
12
9
Current-sense amplifier positive input for channel 3. Connect to bus-voltage side of
channel-3 sense resistor.
Current-sense amplifier negative input for channel 4. Connect to load side of channel-4
sense resistor.
Current-sense amplifier positive input for channel 4. Connect to bus-voltage side of
channel-4 sense resistor.
10
OUT1
OUT2
OUT3
OUT4
VS
16
5
Output
Output
Output
Output
Power
Channel 1 output voltage
Channel 2 output voltage
Channel 3 output voltage
Channel 4 output voltage
Power supply
13
8
14, 15
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
MAX
22
UNIT
Vs
Supply voltage
V
Analog inputs, differential (VIN+) – (VIN–
)
–30
30
(2)
VIN+, VIN–
V
Analog inputs, common mode (VIN+ or VIN-
Analog outputs, output voltage
Operating temperature
)
–20
122
VOUTx
TA
GND – 0.3
–55
Vs + 0.3
150
V
°C
°C
°C
TJ
Junction temperature
150
Tstg
Storage temperature
–65
150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) VIN+ and VIN– are the voltages at the VIN+ and VIN– pins, respectively.
6.2 ESD Ratings
VALUE
UNIT
V
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)
±2000
±1000
V(ESD) Electrostatic discharge
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2)
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VS
NOM
48
MAX
120
20
UNIT
VCM
VS
Common-mode input range(1)
Operating supply range
Ambient temperature
V
V
2.7
–40
5
TA
125
°C
(1) Common-mode voltage can go below VS under certain conditions. See Figure 7-1 for additional information on operating range.
6.4 Thermal Information
INA4290
RGV (QFN)
16 PINS
45.9
INA2290
DGK (VSSOP)
8 PINS
169.3
INA290
DCK (SC-70)
5 PINS
191.6
THERMAL METRIC(1)
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
41.6
60.1
144.4
21.0
91.3
69.2
ΨJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
1.0
8.3
46.2
ΨJB
21.0
89.7
69.0
RθJC(bot)
6.4
N/A
N/A
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, VCM = VIN– = 48 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
INPUT
VCM = 2.7 V to 120 V, TA = –40°C to +125°C
f = 50 kHz
140
160
85
6
CMRR
Common-mode rejection ratio
dB
µV
A1 devices, INA290, INA2290
A1 devices, INA4290
A2 devices
±25
±32
±20
±15
±12
6
Vos
Offset voltage, input referred
3
A3 devices
3
A4, A5 devices
2
dVos/dT Offset voltage drift
TA = –40°C to +125°C
0.2 µV/℃
Power supply rejection ratio,
input referred
PSRR
VS = 2.7 V to 20 V, TA = –40°C to +125°C
0.05
±0.5
µV/V
IB+, VSENSE = 0 mV
IB–, VSENSE = 0 mV
10
10
20
20
30
30
IB
Input bias current
µA
OUTPUT
A1 devices
A2 devices
A3 devices
A4 devices
A5 devices
20
50
G
Gain
100
200
500
V/V
%
A1, A2, A3 devices,
GND + 50 mV ≤ VOUT ≤ VS – 200 mV
0.02
0.02
±0.1
Gain error
A4, A5 devices,
GND + 50 mV ≤ VOUT ≤ VS – 200 mV
±0.15
5
Gain error drift
TA = –40°C to +125°C
1.5
0.01
500
ppm/°C
%
Nonlinearity error
Maximum capacitive load
No sustained oscillations, no isolation resistor
pF
VOLTAGE OUTPUT
Swing to VS power supply rail RLOAD = 10 kΩ, TA = –40°C to +125°C
VS – 0.07
0.005
VS – 0.2
0.025
V
V
RLOAD = 10 kΩ, VSENSE = 0 V, TA = –40°C to
Swing to ground
+125°C
FREQUENCY RESPONSE
A1 devices, CLOAD = 5 pF, VSENSE = 200 mV
A2 devices, CLOAD = 5 pF, VSENSE = 80 mV
A3 devices, CLOAD = 5 pF, VSENSE = 40 mV
A4 devices, CLOAD = 5 pF, VSENSE = 20 mV
A5 devices, CLOAD = 5 pF, VSENSE = 8 mV
1100
1100
900
850
800
2
BW
SR
Bandwidth
kHz
Slew rate
V/µs
µs
VOUT = 4 V ± 0.1 V step, output settles to 0.5%
VOUT = 4 V ± 0.1 V step, output settles to 1%
9
Settling time
5
NOISE
Ven
Voltage noise density
50
nV/√Hz
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at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, VCM = VIN– = 48 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
POWER SUPPLY
VS
IQ
Supply voltage
TA = –40°C to+125°C
2.7
20
500
V
370
680
Quiescent current, INA290
µA
TA = –40°C to +125°C
TA = –40°C to +125°C
TA = –40°C to +125°C
600
900
IQ
Quiescent current, INA2290
Quiescent current, INA4290
µA
µA
1200
1600
1800
1250
IQ
6.6 Typical Characteristics
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
Input Offset Voltage (mV)
Input Offset Voltage (mV)
Figure 6-1. Input Offset Production Distribution,
A1 Devices
Figure 6-2. Input Offset Production Distribution,
A2 Devices
Input Offset Voltage (mV)
Input Offset Voltage (mV)
Figure 6-3. Input Offset Production Distribution,
A3 Devices
Figure 6-4. Input Offset Production Distribution,
A4 Devices
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6.6 Typical Characteristics (continued)
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
Input Offset Voltage (mV)
Figure 6-6. Input Offset Production Distribution,
Figure 6-5. Input Offset Production Distribution,
A1 Devices (INA4290)
A5 Devices
8
4
20
10
0
0
G = 20
G = 50
G = 20
G = 50
-10
-4
G = 100
G = 200
G = 500
G = 100
G = 200
G = 500
-20
-8
-75 -50 -25
0
25
50
75 100 125 150 175
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Temperature (èC)
Figure 6-7. Input Offset Voltage vs. Temperature
180
Figure 6-8. Common-Mode Rejection Ratio vs. Temperature
60
50
40
30
20
160
140
120
100
80
G = 20
G = 50
G = 100
G = 200
G = 500
10
0
60
40
-10
20
10
100
1k
10k
Frequency (Hz)
100k
1M
10M
10
100
1k 10k
Frequency (Hz)
100k
1M
VSENSE = 4 V / Gain
Figure 6-10. Gain vs. Frequency
SPACE
Figure 6-9. Common-Mode Rejection Ratio vs. Frequency
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6.6 Typical Characteristics (continued)
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
0.10
0.05
75
60
45
30
15
0
G = 20
G = 50
G = 100
G = 200
G = 500
G = 20
G = 50
G = 100
G = 200
G = 500
0.00
-15
-30
-45
-0.05
-0.10
-75 -50 -25
0
25
50
75 100 125 150 175
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Temperature (èC)
Figure 6-12. Power-Supply Rejection Ratio vs. Temperature
Figure 6-11. Gain Error vs. Temperature
160
140
120
100
80
25
20
15
VS = 5V
VS = 20V
VS = 2.7V
VS = 0V
10
5
60
0
40
20
-5
10
100
1k 10k
Frequency (Hz)
100k
1M
-20
0
20
40
60
Common-Mode Voltage (V)
80
100
120
SPACE
VSENSE = 0 V
Figure 6-13. Power-Supply Rejection Ratio vs. Frequency
Figure 6-14. Input Bias Current vs. Common-Mode Voltage
240
25
IB+
IB-
200
20
IB+, VS = 0V
160
IB-, VS = 0V
120
VS = 2.7 to 20V, VCM = 48V
VS = 2.7 to 20V, VCM = 120V
VS = 2.7 to 5V, VCM = 2.7V
VS = 20V, VCM = 7V
VS = 2.7 to 20V, VCM = 0V
15
80
40
10
0
VS = 0V, VCM = 48V
VS = 0V, VCM = 120V
VS = 0 to 20V, VCM = -20V
5
-40
-80
-120
-160
0
-5
0
200
400
VSENSE (mV)
600
800
1000
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Figure 6-16. Input Bias Current vs. VSENSE
A1 Devices
,
Figure 6-15. Input Bias Current vs. Temperature
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6.6 Typical Characteristics (continued)
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
140
120
100
80
100
80
60
40
20
0
IB+
IB-
IB+, G=200
IB+, G=500
IB-
IB+, VS = 0V
IB-, VS = 0V
IB+, VS = 0V
IB-, VS = 0V
60
40
20
0
-20
-40
-60
-80
-20
0
100
200
VSENSE (mV)
300
400
0
20
40
60
80
100
VSENSE (mV)
Figure 6-17. Input Bias Current vs. VSENSE
A2 and A3 Devices
,
Figure 6-18. Input Bias Current vs. VSENSE
A4 and A5 Devices
,
VS
VS
25èC
125èC
-40èC
25èC
125èC
-40èC
VS - 1
VS - 2
VS - 3
VS - 1
VS - 2
GND + 3
GND + 2
GND + 1
GND
GND + 2
GND + 1
GND
0
5
10
15
Output Current (mA)
20
25
30
35
40
0
5
10
15
Output Current (mA)
20
25
30
35
40
VS = 2.7 V
VS = 5 V
Figure 6-20. Output Voltage vs. Output Current
Figure 6-19. Output Voltage vs. Output Current
VS
VS - 1
VS - 2
VS - 3
50
25èC
125èC
-40èC
VS = 5V, Sourcing
VS = 5V, Sinking
VS = 20V, Sourcing
VS = 20V, Sinking
VS = 2.7V, Sourcing
VS = 2.7V, Sinking
40
30
20
10
0
GND + 3
GND + 2
GND + 1
GND
0
5
10
15
20
25
Output Current (mA)
30
35
40
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
VS = 20 V
SPACE
Figure 6-22. Short-Circuit Current vs. Temperature
Figure 6-21. Output Voltage vs. Output Current
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6.6 Typical Characteristics (continued)
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
1000
500
0.00
-0.10
-0.20
-0.30
-0.40
-0.50
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
VS = 5V
VS = 20V
VS = 2.7V
0.02
0.01
10
100
1k
10k
Frequency (Hz)
100k
1M
10M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
SPACE
Figure 6-23. Output Impedance vs. Frequency
RL = 10 kΩ
Figure 6-24. Swing to Supply vs. Temperature
0.020
0.015
0.010
0.005
0.000
100
VS = 5V
VS = 20V
VS = 2.7V
G = 20
G = 500
80
70
60
50
40
30
20
10
10
-75 -50 -25
0
25
50
75 100 125 150 175
100
1k 10k
Frequency (Hz)
100k
1M
Temperature (èC)
RL = 10 kΩ
SPACE
Figure 6-26. Input-Referred Noise vs. Frequency
400
Figure 6-25. Swing to GND vs. Temperature
375
350
325
300
275
250
225
200
175
VS = 5V
VS = 20V
VS = 2.7V
0
2.5
5
7.5
10
12.5
Output Voltage (V)
15
17.5
20
Time (1 s/div)
Figure 6-28. Quiescent Current vs. Output Voltage,
INA290
Figure 6-27. Input-Referred Noise
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6.6 Typical Characteristics (continued)
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
Figure 6-29. Quiescent Current vs. Output Voltage,
INA2290
Figure 6-30. Quiescent Current vs. Output Voltage,
INA4290
425
750
700
650
600
400
375
350
325
300
550
VS = 5V
VS = 20V
VS = 2.7V
VS = 5V
VS = 20V
VS = 2.7V
500
-75 -50 -25
-75 -50 -25
0
25
50
75 100 125 150 175
0
25
50
Temperature (°C)
75 100 125 150 175
Temperature (èC)
Figure 6-31. Quiescent Current vs. Temperature,
INA290
Figure 6-32. Quiescent Current vs. Temperature,
INA2290
425
400
375
350
325
300
25èC
125èC
-40èC
0
2
4
6
8
10
12
Supply Voltage (V)
14
16
18
20
Figure 6-34. Quiescent Current vs. Supply Voltage,
INA290
Figure 6-33. Quiescent Current vs. Temperature,
INA4290
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6.6 Typical Characteristics (continued)
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
800
750
700
650
600
25°C
125°C
-40°C
550
0
2
4
6
8
10
12
Supply Voltage (V)
14
16
18
20
Figure 6-36. Quiescent Current vs. Supply Voltage, INA4290
Figure 6-35. Quiescent Current vs. Supply Voltage,
INA2290
425
VS = 5V
VS = 20V
VS = 2.7V
400
375
350
325
300
-20
0
20
40
60
Common-Mode Voltage (V)
80
100
120
Figure 6-37. Quiescent Current vs. Common-Mode Voltage,
INA290
Figure 6-38. Quiescent Current vs. Common-Mode Voltage,
INA2290
VCM
VOUT
2.7V
2.5V
Time (12.5ms/div)
RL = 10 kΩ
VSENSE = 5 mV
Figure 6-40. Common-Mode Voltage Fast Transient Pulse,
A5 Devices
Figure 6-39. Quiescent Current vs. Common-Mode Voltage,
INA4290
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6.6 Typical Characteristics (continued)
al specifications at TA = 25°C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V (unless otherwise noted).
Supply Voltage
Output Voltage
0V
0V
0V
Time (5 ms/div)
Time (10 ms/div)
VSENSE = 0 mV
Figure 6-42. Start-Up Response
SPACE
Figure 6-41. Step Response,
A3 Devices
160
140
120
100
80
0V
Supply Voltage
Output Voltage
60
10
100
1k 10k
Frequency (Hz)
100k
1M
Time (25 ms/div)
Any channel to any other channel
VSENSE = 5 mV
Figure 6-44. Channel Separation vs. Frequency, Multichannel
Devices
Figure 6-43. Supply Transient Response,
A5 Devices
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7 Detailed Description
7.1 Overview
The INAx290 is a high-side only current-sense amplifier that offers a wide common-mode range, precision
zero-drift topology, excellent common-mode rejection ratio (CMRR), high bandwidth, and fast slew rate. Different
gain versions are available to optimize the output dynamic range based on the application. The INAx290 is
designed using a transconductance architecture with a current-feedback amplifier that enables low bias currents
of 20 µA and a common-mode voltage of 120 V.
7.2 Functional Block Diagram
VS
INA4290 (quad channel)
VCM
INA2290 (dual channel)
INA290 (single channel)
ISENSE
R1
IN+
œ
Current
Feedback
RSENSE
Bias
R1
+
OUT
INœ
Buffer
SAR
ADC
Load
RL
GND
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7.3 Feature Description
7.3.1 Amplifier Input Common-Mode Range
The INAx290 supports large input common-mode voltages from 2.7 V to 120 V and features a high DC CMRR
of 160 dB (typical) and a 85-dB AC CMRR at 50 kHz. The minimum common-mode voltage as shown in Figure
7-1 is restricted by the supply voltage. The topology of the internal amplifiers INAx290 restricts operation to
high-side, current-sensing applications.
8
7
6
5
4
3
2
VCM = 2.7V
1
0
0
2.5
5
7.5
10
12.5
Supply Voltage (V)
15
17.5
20
Figure 7-1. Minimum Common-Mode Voltage vs Supply
7.3.2 Input-Signal Bandwidth
Gain vs. Frequency shows the INAx290 –3-dB bandwidth is gain-dependent with gain options of 20 V/V, 50 V/V,
100 V/V, 200 V/V, and 500 V/V. The unique multistage design enables the amplifier to achieve high bandwidth
at all gains. This high bandwidth provides the throughput and fast response required for rapid detection and
processing of overcurrent events.
The device bandwidth also depends on the applied VSENSE voltage. Figure 7-2 shows the bandwidth
performance profile of the device over frequency as output voltage increases for each gain variation. As shown
in Figure 7-2, the device exhibits the highest bandwidth with higher VSENSE voltages, and the bandwidth is
higher with lower device gain options. Individual requirements determine the acceptable limits of error for
high-frequency, current-sensing applications. Testing and evaluation in the end application or circuit is required
to determine the acceptance criteria and validate whether or not the performance levels meet the system
specifications.
1200
1100
1000
900
800
700
600
500
400
300
200
G = 20
G = 50
G = 100
G = 200
G = 500
0
0.5
1
1.5
2
2.5
Output Voltage (V)
3
3.5
4
Figure 7-2. Bandwidth vs Output Voltage
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7.3.3 Low Input Bias Current
The INAx290 input bias current draws 20 μA (typical) even with common-mode voltages as high as 120 V. This
current enables precision current sensing in applications where the sensed current is small or in applications that
require lower input leakage current.
7.3.4 Low VSENSE Operation
The INAx290 enables accurate current measurement across the entire valid VSENSE range. The zero-drift input
architecture of the INAx290 provides the low offset voltage and low offset drift required to measure low VSENSE
levels accurately across the wide operating temperature of –40°C to +125°C. The capability to measure low
sense voltages enables accurate measurements at lower load currents, and also allows reduction of the sense
resistor value for a given operating current, which minimizes the power loss in the current-sensing element.
For multichannel devices, the offset voltage and offset drift characteristics can vary from channel to channel;
however, all channels meet the maximum values specified in Electrical Characteristics.
7.3.5 Wide Fixed-Gain Output
The INAx290 gain error is < 0.1% at room temperature for most gain options, with a maximum drift of 5 ppm/°C
over the full temperature range of –40°C to +125°C. The INAx290 is available in multiple gain options of 20 V/V,
50 V/V, 100 V/V, 200 V/V, and 500 V/V, which is selected based on the desired signal-to-noise ratio and other
system requirements of the design.
The INAx290 closed-loop gain is set by a precision, low-drift internal resistor network. The ratio of these resistors
are excellently matched, although the absolute values can vary significantly. TI does not recommend adding
additional resistance around the INAx290 to change the effective gain because of this variation. Table 7-1
describes the typical values of the internal gain resistors seen in the functional diagram above.
Table 7-1. Fixed Gain Resistor
GAIN
R1
RL
20 (V/V)
50 (V/V)
100 (V/V)
200 (V/V)
500 (V/V)
25 kΩ
10 kΩ
10 kΩ
5 kΩ
500 kΩ
500 kΩ
1000 kΩ
1000 kΩ
1000 kΩ
2 kΩ
7.3.6 Wide Supply Range
The INAx290 operates with a wide supply range from a 2.7 V to 20 V. The output stage supports a full-
scale output voltage range of up to VS. A wide output range can enable very-wide dynamic range current
measurements. For a gain of 20 V/V, the maximum acceptable differential input is 1 V.
The INAx290A1 gain offset is ±25 µV and this device is capable of measuring a wide dynamic range of current
up to 92 dB.
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7.4 Device Functional Modes
7.4.1 Unidirectional Operation
The INAx290 measures the differential voltage developed by current flowing through a resistor that is commonly
referred to as a current-sensing resistor or a current-shunt resistor. Figure 7-3 shows that the INAx290 operates
in unidirectional mode only, meaning the device only senses current sourced from a power supply to a system
load.
5 V
48-V
Supply
ISENSE
R1
IN+
+
Current
Feedback
RSENSE
Bias
R1
œ
OUT
INœ
Buffer
RL
Load
GND
Figure 7-3. Unidirectional Application (Single-Channel Device)
The linear range of the output stage is limited to how close the output voltage can approach ground under
zero-input conditions. The zero current output voltage of the INAx290 is very small, with a maximum of GND +
25 mV. Apply a sense voltage of (25 mV / Gain) or greater to keep the INAx290 output in the linear region of
operation.
7.4.2 High Signal Throughput
With a bandwidth of 1.1 MHz at a gain of 20 V/V and a slew rate of 2 V/µs, the INAx290 is specifically designed
for detecting and protecting applications from fast inrush currents. As shown in Table 7-2, the INAx290 responds
in less than 2 µs for a system measuring a 75-A threshold on a 2-mΩ shunt.
Table 7-2. Response Time
INAx290
PARAMETER
Gain
EQUATION
AT VS = 5 V
20 V/V
100 A
75 A
G
IMAX
Maximum current
IThreshold
RSENSE
VOUT_MAX
VOUT_THR
SR
Threshold current
Current sense resistor value
Output voltage at maximum current
Output voltage at threshold current
Slew rate
2 mΩ
VOUT = IMAX × RSENSE × G
4 V
VOUT_THR = ITHR × RSENSE × G
3 V
2 V/µs
< 2 µs
Output response time
Tresponse = VOUT_THR / SR
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
The INAx290 amplifies the voltage developed across a current-sensing resistor as current flows through the
resistor to the load. The wide input common-mode voltage range and high common-mode rejection of the
INAx290 allows use over a wide range of voltage rails while still maintaining an accurate current measurement.
8.1.1 RSENSE and Device Gain Selection
The accuracy of any current-sense amplifier is maximized by choosing the current-sense resistor to be as large
as possible. A large sense resistor maximizes the differential input signal for a given amount of current flow
and reduces the error contribution of the offset voltage. However, there are practical limits as to how large the
current-sense resistor can be in a given application because of the resistor size and maximum allowable power
dissipation. Equation 1 gives the maximum value for the current-sense resistor for a given power dissipation
budget:
PDMAX
RSENSE
<
2
IMAX
(1)
where:
•
•
PDMAX is the maximum allowable power dissipation in RSENSE
IMAX is the maximum current that flows through RSENSE
.
.
An additional limitation on the size of the current-sense resistor and device gain results from the power-supply
voltage, VS, and device swing-to-rail limitations. To ensure that the current-sense signal is properly passed to the
output, both positive and negative output swing limitations must be examined. Equation 2 provides the maximum
values of RSENSE and GAIN to keep the device from exceeding the positive swing limitation.
IMAX ª RSENSE ª GAIN < VSP
(2)
where:
•
•
•
IMAX is the maximum current that flows through RSENSE
GAIN is the gain of the current-sense amplifier.
VSP is the positive output swing as specified in this data sheet.
.
To avoid positive output swing limitations when selecting the value of RSENSE, there is always a trade-off
between the value of the sense resistor and the gain of the device under consideration. If the sense resistor
selected for the maximum power dissipation is too large, then selecting a lower gain device is possible to avoid
positive swing limitations.
The negative swing limitation places a limit on how small the sense resistor value can be for a given application.
Equation 3 provides the limit on the minimum value of the sense resistor.
IMIN ª RSENSE ª GAIN > VSN
(3)
where:
•
•
IMIN is the minimum current that flows through RSENSE
GAIN is the gain of the current-sense amplifier.
.
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•
VSN is the negative output swing of the device.
Table 8-1 shows an example of the different results obtained from using five different gain versions of the
INAx290. From the table data, the highest gain device allows a smaller current-shunt resistor and decreased
power dissipation in the element.
Table 8-1. RSENSE Selection and Power Dissipation
RESULTS AT VS = 5 V
PARAMETER(1)
EQUATION
INAx290A1 INAx290A2 INAx290A3 INAx290A4 INAx290A5
G
Gain
20 V/V
50 V/V
100 V/V
200 V/V
500 V/V
Ideal differential input voltage (Ignores
swing limitation and power-supply
variation.)
VSENSE
VSENSE = VOUT / G
250 mV
100 mV
50 mV
25 mV
10 mV
RSENSE
PSENSE
Current-sense resistor value
RSENSE = VSENSE / IMAX
25 mΩ
2.5 W
10 mΩ
1 W
5 mΩ
0.5W
2.5 mΩ
0.25 W
1 mΩ
0.1 W
Current-sense resistor power dissipation
RSENSE x IMAX2
(1) Design example with 10-A, full-scale current with maximum output voltage set to 5 V.
8.1.2 Input Filtering
Note
Input filters are not required for accurate measurements using the INAx290, and use of filters in this
location is not recommended. If filter components are used on the input of the amplifier, follow the
guidelines in this section to minimize the effects on performance.
Based strictly on user design requirements, external filtering of the current signal may be desired. The initial
location that can be considered for the filter is at the output of the current-sense amplifier. Although placing the
filter at the output satisfies the filtering requirements, this location changes the low output impedance measured
by any circuitry connected to the output voltage pin. The other location for filter placement is at the current-sense
amplifier input pins. This location also satisfies the filtering requirement, but the components must be carefully
selected to minimally impact device performance. Figure 8-1 shows a filter placed at the input pins.
VS
VCM
1
f3dB
=
4ŒRINCIN
ISENSE
RIN
R1
R1
IN+
+
CIN
Current
RSENSE
Bias
Feedback
RIN
OUT
-
INœ
Buffer
Load
RL
GND
Figure 8-1. Filter at Input Pins (Single Channel Shown for Simplicity)
External series resistance provides a source of additional measurement error, so keep the value of these
series resistors to 10 Ω or less to reduce loss of accuracy. The internal bias network shown in Figure 8-1
creates a mismatch in input bias currents (see Figure 6-16, Figure 6-17, and Figure 6-18) when a differential
voltage is applied between the input pins. If additional external series filter resistors are added to the circuit, a
mismatch is created in the voltage drop across the filter resistors. This voltage is a differential error voltage in the
shunt resistor voltage. In addition to the absolute resistor value, mismatch resulting from resistor tolerance can
significantly impact the error because this value is calculated based on the actual measured resistance.
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Use Equation 4 to calculate the measurement error expected from the additional external filter resistors, and use
Equation 5 to calculate the gain error factor.
Gain Error (%) = 100 x (Gain Error Factor Þ 1)
(4)
RB × R1
Gain Error Factor =
(RB × R1) + (RB × RIN) + (2 × RIN × R1)
(5)
Where:
•
•
•
RIN is the external filter resistance value.
R1 is the INAx290 input resistance value specified in Table 7-1.
RB in the internal bias resistance, which is 6600 Ω ± 20%.
The gain error factor, shown in Equation 4, can be calculated to determine the gain error introduced by the
additional external series resistance. Equation 4 calculates the deviation of the shunt voltage, resulting from
the attenuation and imbalance created by the added external filter resistance. Table 8-2 provides the gain error
factor and gain error for several resistor values.
Table 8-2. Example Gain Error Factor and Gain Error for 10-Ω External Filter Input Resistors
DEVICE (GAIN)
A1 devices (20)
A2 devices (50)
A3 devices (100)
A4 devices (200)
A5 devices (500)
GAIN ERROR FACTOR
GAIN ERROR (%)
0.99658
–0.34185
0.99598
–0.40141
0.99598
–0.40141
0.99499
–0.50051
0.99203
–0.79663
8.2 Typical Application
The INAx290 is a unidirectional, current-sense amplifier capable of measuring currents through a resistive shunt
with shunt common-mode voltages from 2.7 V to 120 V. Figure 8-2 shows the circuit configuration for monitoring
current in a high-side radio frequency (RF) power amplifier (PA) application.
54 V
+
INAx290
ADC
œ
RF
Out
GND
Microprocessor
RF
DAC
GND
Figure 8-2. Current Sensing in a PA Application (Single-Channel Device)
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8.2.1 Design Requirements
VSUPPLY is set to 5 V and the common-mode voltage set to 54 V. Table 8-3 lists the design setup for this
application.
Table 8-3. Design Parameters
DESIGN PARAMETERS
INAx290 supply voltage
High-side supply voltage
Maximum sense current (IMAX
Gain option
EXAMPLE VALUE
5 V
5 V
)
5 A
50 V/V
8.2.2 Detailed Design Procedure
The maximum value of the current-sense resistor is calculated based on the choice of gain, value of the
maximum current to be sensed (IMAX), and the power-supply voltage (VS). When operating at the maximum
current, the output voltage must not exceed the positive output swing specification, VSP. Under the given design
parameters, Equation 6 calculates the maximum value for RSENSE as 19.2 mΩ.
VSP
RSENSE
<
IMAX ìGAIN
(6)
Although 15 mΩ is less than the maximum value calculated, 15 mΩ is selected for this design example because
this value is still large enough to provide an adequate signal at the current-sense amplifier output.
8.2.2.1 Overload Recovery With Negative VSENSE
The INAx290 is a unidirectional current-sense amplifier that is meant to operate with a positive differential input
voltage (VSENSE). If negative VSENSE is applied, the device is placed in an overload condition and requires time
to recover when VSENSE returns positive. The required overload recovery time increases with more negative
VSENSE
.
8.2.3 Application Curve
Figure 8-3 shows the output response of the device to a high-frequency sinusoidal current.
VSENSE (20 mV/div)
INA290A2 VOUT (1 V/div)
Time (10ms/div)
Figure 8-3. INAx290 Output Response
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9 Power Supply Recommendations
The input circuitry of the INAx290 can accurately measure beyond the power-supply voltage. The power supply
can be 20 V, whereas the load power-supply voltage at IN+ and IN– can go up to 120 V. The output voltage
range of the OUT pin is limited by the voltage on the VS pin and the device swing to the supply specification.
10 Layout
10.1 Layout Guidelines
TI always recommends to follow good layout practices:
•
Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing
of the current-sensing resistor commonly results in additional resistance present between the input pins.
Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can
cause significant measurement errors.
•
•
Place the power-supply bypass capacitor as close to the device power supply and ground pins as possible.
The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added
to compensate for noisy or high-impedance power supplies.
When routing the connections from the current-sense resistor to the device, keep the trace lengths as short
as possible.
10.2 Layout Examples
Load
RSENSE
TI Device
Current Sense
Output
1
2
3
5
INœ
OUT
GND
VS
Direction of
Current Flow
Power Supply, VS
(2.7 V to 20 V)
4 IN+
CBYPASS
VIA to Ground
Plane
Bus Voltage
Figure 10-1. Recommended Layout for the INA290
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Direction of
Current Flow
RSHUNT1
Load 1
Bus Voltage1
CBYPASS
Power Supply, VS:
2.7 V to 20 V
5
4
3
2
1
IN+1
VS
INœ1 6
Current Sense Output 1
Current Sense Output 2
OUT1
OUT2
GND
7
8
IN+2
IN-2
VIA to Ground
Plane
Load 2
Bus Voltage2
RSHUNT2
Direction of
Current Flow
Figure 10-2. Recommended Layout for the INA2290
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Bus Voltage1
Bus Voltage3
Direction
of Current
Flow
Direction
of Current
Flow
RSHUNT1
RSHUNT3
Load 1
Load 3
VIA to
Ground
Plane
Power Supply, VS:
2.7 V to 20 V
CBYPASS
Current
Sense
Current
Sense
Output 1
Output 3
IN+1
IN+3
IN–3
IN+4
IN–4
IN–1
IN+2
IN–2
VIA to
Ground
Plane
Current
Sense
Current
Sense
Output 2
Output 4
Bus Voltage2
Bus Voltage4
RSHUNT4
RSHUNT2
Direction
of Current
Flow
Direction
of Current
Flow
LOAD2
LOAD4
Figure 10-3. Recommended Layout for the INA4290
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation, see the following:
•
•
•
Texas Instruments, INA290EVM User's Guide (SBOU230)
Texas Instruments, INA2290EVM User's Guide (SBOU243)
Texas Instruments, INA4290EVM User's Guide (SBOU258)
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2021 Texas Instruments Incorporated
26
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Product Folder Links: INA290 INA2290 INA4290
PACKAGE OPTION ADDENDUM
www.ti.com
11-Jul-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
INA2290A1IDGKR
INA2290A1IDGKT
INA2290A2IDGKR
INA2290A2IDGKT
INA2290A3IDGKR
INA2290A3IDGKT
INA2290A4IDGKR
INA2290A4IDGKT
INA2290A5IDGKR
INA2290A5IDGKT
INA290A1IDCKR
INA290A1IDCKT
INA290A2IDCKR
INA290A2IDCKT
INA290A3IDCKR
INA290A3IDCKT
INA290A4IDCKR
INA290A4IDCKT
INA290A5IDCKR
INA290A5IDCKT
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
SC70
DGK
DGK
DGK
DGK
DGK
DGK
DGK
DGK
DGK
DGK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
8
8
8
8
8
8
8
8
8
8
5
5
5
5
5
5
5
5
5
5
2500 RoHS & Green
250 RoHS & Green
2500 RoHS & Green
250 RoHS & Green
2500 RoHS & Green
250 RoHS & Green
2500 RoHS & Green
250 RoHS & Green
2500 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
2FAQ
2FAQ
2FBQ
2FBQ
2FCQ
2FCQ
2FDQ
2FDQ
2FEQ
2FEQ
1FQ
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
SC70
1FQ
SC70
1FR
SC70
1FR
SC70
1FS
SC70
1FS
SC70
1FT
SC70
1FT
SC70
1FU
SC70
250
RoHS & Green
1FU
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
11-Jul-2021
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
RGV
RGV
RGV
RGV
RGV
RGV
RGV
RGV
RGV
RGV
Qty
(1)
(2)
(3)
(4/5)
(6)
INA4290A1IRGVR
INA4290A1IRGVT
INA4290A2IRGVR
INA4290A2IRGVT
INA4290A3IRGVR
INA4290A3IRGVT
INA4290A4IRGVR
INA4290A4IRGVT
INA4290A5IRGVR
INA4290A5IRGVT
ACTIVE
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
16
16
16
16
16
16
16
16
16
16
2500 RoHS & Green
250 RoHS & Green
2500 RoHS & Green
250 RoHS & Green
2500 RoHS & Green
250 RoHS & Green
2500 RoHS & Green
250 RoHS & Green
2500 RoHS & Green
250 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
INA
4290A1
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
INA
4290A1
INA
4290A2
INA
4290A2
INA
4290A3
INA
4290A3
INA
4290A4
INA
4290A4
INA
4290A5
INA
4290A5
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com
11-Jul-2021
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF INA290 :
Automotive : INA290-Q1
•
NOTE: Qualified Version Definitions:
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
•
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Jul-2021
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA2290A1IDGKR
INA2290A1IDGKT
INA2290A2IDGKR
INA2290A2IDGKT
INA2290A3IDGKR
INA2290A3IDGKT
INA2290A4IDGKR
INA2290A4IDGKT
INA2290A5IDGKR
INA2290A5IDGKT
INA290A1IDCKR
INA290A1IDCKT
INA290A2IDCKR
INA290A2IDCKT
INA290A3IDCKR
INA290A3IDCKT
INA290A4IDCKR
INA290A4IDCKT
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
SC70
DGK
DGK
DGK
DGK
DGK
DGK
DGK
DGK
DGK
DGK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
8
8
8
8
8
8
8
8
8
8
5
5
5
5
5
5
5
5
2500
250
330.0
330.0
330.0
330.0
330.0
330.0
330.0
330.0
330.0
330.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
12.4
12.4
12.4
12.4
12.4
12.4
12.4
12.4
12.4
12.4
8.4
5.3
5.3
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
2.3
2.3
2.3
2.3
2.3
2.3
2.3
2.3
1.4
1.4
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
8.0
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q3
Q3
Q3
Q3
Q3
Q3
Q3
Q3
2500
250
5.3
1.4
5.3
1.4
2500
250
5.3
1.4
5.3
1.4
2500
250
5.3
1.4
5.3
1.4
2500
250
5.3
1.4
5.3
1.4
3000
250
2.47
2.47
2.47
2.47
2.47
2.47
2.47
2.47
1.25
1.25
1.25
1.25
1.25
1.25
1.25
1.25
SC70
8.4
8.0
SC70
3000
250
8.4
8.0
SC70
8.4
8.0
SC70
3000
250
8.4
8.0
SC70
8.4
8.0
SC70
3000
250
8.4
8.0
SC70
8.4
8.0
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Jul-2021
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA290A5IDCKR
INA290A5IDCKT
INA4290A1IRGVR
INA4290A1IRGVT
INA4290A2IRGVR
INA4290A2IRGVT
INA4290A3IRGVR
INA4290A3IRGVT
INA4290A4IRGVR
INA4290A4IRGVT
INA4290A5IRGVR
INA4290A5IRGVT
SC70
SC70
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
DCK
DCK
RGV
RGV
RGV
RGV
RGV
RGV
RGV
RGV
RGV
RGV
5
3000
250
180.0
180.0
330.0
180.0
330.0
180.0
330.0
180.0
330.0
180.0
330.0
180.0
8.4
2.47
2.47
4.25
4.25
4.25
4.25
4.25
4.25
4.25
4.25
4.25
4.25
2.3
1.25
1.25
1.15
1.15
1.15
1.15
1.15
1.15
1.15
1.15
1.15
1.15
4.0
4.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
Q3
Q3
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
Q2
5
8.4
2.3
8.0
16
16
16
16
16
16
16
16
16
16
2500
250
12.4
12.4
12.4
12.4
12.4
12.4
12.4
12.4
12.4
12.4
4.25
4.25
4.25
4.25
4.25
4.25
4.25
4.25
4.25
4.25
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
2500
250
2500
250
2500
250
2500
250
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
INA2290A1IDGKR
INA2290A1IDGKT
INA2290A2IDGKR
INA2290A2IDGKT
INA2290A3IDGKR
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
DGK
DGK
DGK
DGK
DGK
8
8
8
8
8
2500
250
366.0
366.0
366.0
366.0
366.0
364.0
364.0
364.0
364.0
364.0
50.0
50.0
50.0
50.0
50.0
2500
250
2500
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Jul-2021
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
INA2290A3IDGKT
INA2290A4IDGKR
INA2290A4IDGKT
INA2290A5IDGKR
INA2290A5IDGKT
INA290A1IDCKR
INA290A1IDCKT
INA290A2IDCKR
INA290A2IDCKT
INA290A3IDCKR
INA290A3IDCKT
INA290A4IDCKR
INA290A4IDCKT
INA290A5IDCKR
INA290A5IDCKT
INA4290A1IRGVR
INA4290A1IRGVT
INA4290A2IRGVR
INA4290A2IRGVT
INA4290A3IRGVR
INA4290A3IRGVT
INA4290A4IRGVR
INA4290A4IRGVT
INA4290A5IRGVR
INA4290A5IRGVT
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
SC70
DGK
DGK
DGK
DGK
DGK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
RGV
RGV
RGV
RGV
RGV
RGV
RGV
RGV
RGV
RGV
8
8
250
2500
250
366.0
366.0
366.0
366.0
366.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
367.0
210.0
367.0
210.0
367.0
210.0
367.0
210.0
367.0
210.0
364.0
364.0
364.0
364.0
364.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
183.0
367.0
185.0
367.0
185.0
367.0
185.0
367.0
185.0
367.0
185.0
50.0
50.0
50.0
50.0
50.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
20.0
35.0
35.0
35.0
35.0
35.0
35.0
35.0
35.0
35.0
35.0
8
8
2500
250
8
5
3000
250
SC70
5
SC70
5
3000
250
SC70
5
SC70
5
3000
250
SC70
5
SC70
5
3000
250
SC70
5
SC70
5
3000
250
SC70
5
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
16
16
16
16
16
16
16
16
16
16
2500
250
2500
250
2500
250
2500
250
2500
250
Pack Materials-Page 3
IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you
permission to use these resources only for development of an application that uses the TI products described in the resource. Other
reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third party
intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims, damages,
costs, losses, and liabilities arising out of your use of these resources.
TI’s products are provided subject to TI’s Terms of Sale (https:www.ti.com/legal/termsofsale.html) or other applicable terms available either
on ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s
applicable warranties or warranty disclaimers for TI products.IMPORTANT NOTICE
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2021, Texas Instruments Incorporated
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