LM119 MDE [TI]
高速双路比较器 | Y | 0 | -55 to 125;型号: | LM119 MDE |
厂家: | TEXAS INSTRUMENTS |
描述: | 高速双路比较器 | Y | 0 | -55 to 125 放大器 放大器电路 比较器 |
文件: | 总22页 (文件大小:666K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LM119QML
LM119QML High Speed Dual Comparator
Literature Number: SNOSAN3A
January 13, 2009
LM119QML
High Speed Dual Comparator
General Description
The LM119 is a precision high speed dual comparator fabri-
cated on a single monolithic chip. It is designed to operate
over a wide range of supply voltages down to a single 5V logic
supply and ground. Further, it has higher gain and lower input
currents than devices like the LM710. The uncommitted col-
lector of the output stage makes the LM119 compatible with
RTL, DTL and TTL as well as capable of driving lamps and
relays at currents up to 25 mA.
Features
Available with radiation guaranteed
■
High Dose Rate
ELDRS Free
100 krad(Si)
100 krad(Si)
—
—
Two independent comparators
Operates from a single 5V supply
Typically 80 ns response time at ±15V
Minimum fan-out of 2 each side
■
■
■
■
■
■
■
Maximum input current of 1 μA over temperature
Inputs and outputs can be isolated from system ground
High common mode slew rate
Although designed primarily for applications requiring opera-
tion from digital logic supplies, the LM119 is fully specified for
power supplies up to ±15V. It features faster response than
the LM111 at the expense of higher power dissipation. How-
ever, the high speed, wide operating voltage range and low
package count make the LM119 much more versatile than
older devices like the LM711.
Ordering Information
NS Part Number
LM119E/883
SMD Part Number
NS Package Number
Package Description
20LD LCC
E20A
E20A
H10C
H10C
H10C
H10C
LM119E-SMD
LM119H/883
86014012A
20LD LCC
10LD T0-100 Metal Can
10LD T0-100 Metal Can
10LD T0-100 Metal Can
10LD T0-100 Metal Can
LM119H-SMD
LM119H-QMLV
8601401IA
5962-9679801VIA
LM119HRQMLV
HIGH DOSE RATE (Note 13)
5962R9679801VIA
100 krad(Si)
LM119HRLQMLV
ELDRS FREE (Note 14)
5962R9679802VIA
100 krad(Si)
H10C
10LD T0-100 Metal Can
LM119J/883
J14A
J14A
J14A
J14A
14LD CERDIP
14LD CERDIP
14LD CERDIP
14LD CERDIP
LM119J-SMD
LM119J-QMLV
8601401CA
5962-9679801VCA
LM119JRQMLV
HIGH DOSE RATE (Note 13)
5962R9679801VCA
100 krad(Si)
LM119JRLQMLV
ELDRS FREE (Note 14)
5962R9679802VCA
100 krad(Si)
J14A
14LD CERDIP
LM119W/883
W10A
W10A
W10A
W10A
10LD CERPAK
10LD CERPAK
10LD CERPAK
10LD CERPAK
LM119W-SMD
LM119W-QMLV
8601401HA
5962-9679801VHA
LM119WRQMLV
HIGH DOSE RATE (Note 13)
5962R9679801VHA
100 krad(Si)
LM119WRLQMLV
ELDRS FREE (Note 14)
5962R9679802VHA
100 krad(Si)
W10A
10LD CERPAK
LM119WG/883
WG10A
WG10A
WG10A
10LD Ceramic SOIC
10LD Ceramic SOIC
10LD Ceramic SOIC
LM119WG-QMLV
5962-9679801VXA
LM119WGRQMLV
HIGH DOSE RATE (Note 14)
5962R9679801VXA
100 krad(Si)
© 2009 National Semiconductor Corporation
201437
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NS Part Number
SMD Part Number
NS Package Number
Package Description
LM119WGRLQMLV
ELDRS FREE (Note 14)
5962R9679802VXA
100 krad(Si)
WG10A
10LD Ceramic SOIC
LM119 MDE
ELDRS FREE DIE
(Notes 1, 14)
5962R9679802V9A
100 krad(Si)
LM119 MDR
HIGH DOSE RATE DIE
(Notes 1, 13)
5962R9679801V9A
100 krad(Si)
Note 1: FOR ADDITIONAL DIE INFORMATION, PLEASE VISIT THE HI REL WEB SITE AT: www.national.com/analog/space/level_die
Connection Diagrams
Dual-In-Line Package
Leadless Chip Carrier
20143704
20143708
Top View
Top View
See NS Package Number E20A
See NS Package Number J14A
Metal Can Package
20143709
See NS Package Number W10A, WG10A
20143707
Case is connected to pin 5 (V−)
Top View
See NS Package Number H10C
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2
Schematic Diagram
20143701
*Do not operate the LM119 with more than 16V between GND and V+
3
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Absolute Maximum Ratings (Note 2)
Total Supply Voltage
36V
36V
25V
18V
±5V
Output to Negative Supply Voltage
Ground to Negative Supply Voltage
Ground to Positive Supply Voltage
Differential Input Voltage
Input Voltage (Note 4)
±15V
500 mW
10 sec
Power Dissipation (Note 3)
Output Short Circuit Duration
Storage Temperature Range
−65°C ≤ TA ≤ 150°C
−55°C ≤ TA ≤ 125°C
150°C
Operating Ambient Temperature Range
Maximum Junction Temperature (TJ)
Lead Temperature (Soldering, 10 sec.)
Thermal Resistance
ꢀθJA
260°C
E Package (Still Air)
E Package (500LF/Min Air flow)
H Package (Still Air)
H Package (500LF/Min Air flow)
J Package (Still Air)
J Package (500LF/Min Air flow)
W Package (Still Air)
W Package (500LF/Min Air flow)
WG Package (Still Air)
WG Package (500LF/Min Air flow)
ꢀθJC
89°C/W
63°C/W
162°C/W
88°C/W
94°C/W
52°C/W
215°C/W
132°C/W
215°C/W
132°C/W
E Package
H Package
J Package
W Package
5°C/W
31°C/W
11°C/W
13°C/W
13°C/W
WG Package
Package Weight
E Package
H Package
TBD
TBD
J Package
TBD
W Package
TBD
WG Package
ESD rating (Note 5)
225mg
800V
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4
Quality Conformance Inspection
Mil-Std-883, Method 5005 - Group A
Subgroup
Description
Static tests at
Temp °C
25
1
2
Static tests at
125
-55
25
3
Static tests at
4
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
Settling time at
Settling time at
Settling time at
5
125
-55
25
6
7
8A
8B
9
125
-55
25
10
11
12
13
14
125
-55
25
125
-55
5
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LM119/883 Electrical Characteristics
DC Parameters
The following conditions apply, unless otherwise specified. VCM = 0V
Sub-
groups
Symbol
+ICC
Parameter
Conditions
Notes
Min Max
Units
Positive Supply Current
±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
+VCC = 15V, -VCC = -1V,
VGnd = 0V, VO = 35V,
VI = 5mV
11
11.5
-4.2
mA
mA
mA
mA
µA
1
2
-ICC
Negative Supply Current
Output Leakage Current
1
-4.5
2
ILeak
1.8
1
9.5
µA
2
10.0
0.475
0.95
0.475
.95
µA
3
IIB
Input Bias Current
Input Offset Voltage
±VCC = ±15V
µA
1
µA
2, 3
1
+VCC = 5V, −VCC = 0V,
VCM = 1.5V
µA
µA
2, 3
1
VIO
+VCC = 5V, −VCC = 0V,
VCM = 1V, RS ≤ 5KΩ
+VCC = 5V, −VCC = 0V,
VCM = 3V, RS ≤ 5KΩ
±VCC = ±15V, VCM = 12V,
RS ≤ 5KΩ
-3.8
-6.8
3.8
6.8
mV
mV
2, 3
-3.8
-6.8
3.8
6.8
mV
mV
1
2, 3
-3.8
-6.8
3.8
6.8
mV
mV
1
2, 3
±VCC = ±15V, VCM = -12V,
-3.8
-6.8
3.8
6.8
mV
mV
1
2, 3
RS ≤ 5KΩ
+VCC = 5V, −VCC = 0V, VCM = 1V
IIO
Input Offset Current
-75
75
nA
nA
nA
nA
nA
nA
nA
nA
V
1
2, 3
1
-100 100
-75 75
-100 100
-75 75
-100 100
-75 75
+VCC = 5V, −VCC = 0V, VCM = 3V
±VCC = ±15V, VCM = 12V
2, 3
1
2, 3
1
±VCC = ±15V, VCM = -12V
-100 100
1.5
2, 3
1
VSat
Output Saturation Voltage
Voltage Gain
±VCC = ±15V, IO = 25mA,
VI = -5mV
+VCC = 5V, −VCC = 0V,
IO= 4.0mA
(Note 12)
(Note 12)
0.4
0.6
V
V
K
1, 2
3
AV
±VCC = ±15V, Delta VO = 12V,
(Note 9), 10.5
(Note 10)
4
RL = 1.4KΩ
(Note 9),
(Note 10)
10
8.0
5.0
5.8
K
K
K
K
5, 6
4
+VCC = 5V, −VCC = 0V,
(Note 9),
(Note 11)
Delta VO = 4.5V, RL = 1.4KΩ
(Note 9),
(Note 11)
5
(Note 9),
(Note 11)
6
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6
LM119-SMD Electrical Characteristics
SMD 8601401
DC Parameters
The following conditions apply, unless otherwise specified. VCM = 0V
Sub-
groups
Symbol
+ICC
Parameter
Conditions
Notes
Min Max
Units
Positive Supply Current
±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
11
11.5
-4.2
mA
mA
mA
mA
mA
µA
1
2, 3
1
-ICC
Negative Supply Current
-4.5
2
-6.0
3
ILeak
IIB
Output Leakage Current
Input Bias Current
+VCC = 15V, -VCC = -1V,
VGnd = 0V, VO = 35V
(Note 6)
(Note 6)
1.8
1
10
µA
2, 3
1
±VCC = ±15V
0.475
0.95
0.475
.95
µA
µA
2, 3
1
+VCC = 5V
(Note 7)
(Note 7)
(Note 7)
µA
µA
2, 3
1
+VCC = 5V, VCM = 1V, RS ≤ 5KΩ
VIO
Input Offset Voltage
-3.8
-6.8
-3.8
-6.8
3.8
6.8
3.8
6.8
mV
mV
mV
mV
(Note 7)
(Note 7)
(Note 7)
2, 3
1
+VCC = 5V, VCM = 3V,
RS ≤ 5KΩ
2, 3
±VCC = ±15V, VCM = 12V,
-3.8
-6.8
3.8
6.8
mV
mV
1
2, 3
RS ≤ 5KΩ
±VCC = ±15V, VCM = -12V,
RS ≤ 5KΩ
-3.8
-6.8
3.8
6.8
mV
mV
1
2, 3
IIO
Input Offset Current
+VCC = 5V, VCM = 1V
(Note 7)
(Note 7)
(Note 7)
(Note 7)
-75
75
nA
nA
nA
nA
nA
nA
nA
nA
V
1
2, 3
1
-100 100
-75 75
-100 100
-75 75
-100 100
-75 75
-100 100
+VCC = 5V, VCM = 3V
±VCC = ±15V, VCM = 12V
±VCC = ±15V, VCM = -12V
+VCC = 5V
2, 3
1
2, 3
1
2, 3
1, 2, 3
VI
Input Voltage Range
(Note 7),
(Note 8)
1.0
3.0
±VCC = ±15V
(Note 8)
(Note 6)
-12
12
V
V
1, 2, 3
1, 2, 3
VSat
Output Saturation Voltage
±VCC = ±15V, IO = 25mA,
VI ≤ -5mV
1.5
+VCC = 3.5V, -VCC = -1V,
VI ≤ -6mV, IO ≤ 3.2mA
±VCC = ±15V, Delta VO = 12V,
RL = 1.4KΩ
0.4
0.6
V
V
1, 2
3
AV
Voltage Gain
(Note 9)
(Note 9)
10.5
10
K
K
K
4
5, 6
4
+VCC = 5V, -VCC = 0V,
(Note 7),
(Note 9)
8.0
Delta VO = 4.5V, RL = 1.4KΩ
(Note 7),
(Note 9)
5.0
5.8
80
K
K
5
6
4
(Note 7),
(Note 9)
CMRR
Common Mode Rejection Ratio ±VCC = ±15V, VCM = ±12V
dB
7
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LM119 Electrical Characteristics SMD 5962-9679801, HIGH DOSE RATE
DC Parameters
The following conditions apply, unless otherwise specified. VCM = 0V
Sub-
groups
Symbol
+ICC
Parameter
Conditions
Notes
Min Max
Units
Positive Supply Current
±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
11
11.5
-4.2
mA
mA
mA
mA
mA
µA
1
2, 3
1
-ICC
Negative Supply Current
-4.5
2
-6.0
3
ILeak
IIB
Output Leakage Current
Input Bias Current
+VCC = 15V, -VCC = -1V,
VGnd = 0V, VO = 35V
(Note 6)
(Note 6)
1.8
1
10
µA
2, 3
1
±VCC = ±15V
0.475
0.95
0.475
.95
µA
µA
2, 3
1
+VCC = 5V
(Note 7)
(Note 7)
(Note 7)
(Note 7)
(Note 7)
(Note 7)
µA
µA
2, 3
1
+VCC = 5V, VCM = 1V, RS ≤ 5KΩ
VIO
Input Offset Voltage
-3.8
-6.8
-3.8
-6.8
3.8
6.8
3.8
6.8
mV
mV
mV
mV
2, 3
1
+VCC = 5V, VCM = 3V,
RS ≤ 5KΩ
2, 3
±VCC = ±15V, VCM = 12V,
-3.8
-6.8
3.8
6.8
mV
mV
1
2, 3
RS ≤ 5KΩ
±VCC = ±15V, VCM = -12V,
RS ≤ 5KΩ
-3.8
-6.8
3.8
6.8
mV
mV
1
2, 3
IIO
Input Offset Current
+VCC = 5V, VCM = 1V
(Note 7)
(Note 7)
(Note 7)
(Note 7)
-75
75
nA
nA
nA
nA
nA
nA
nA
nA
V
1
2, 3
1
-100 100
-75 75
-100 100
-75 75
-100 100
-75 75
-100 100
+VCC = 5V, VCM = 3V
±VCC = ±15V, VCM = 12V
±VCC = ±15V, VCM = -12V
+VCC = 5V
2, 3
1
2, 3
1
2, 3
1, 2, 3
VI
Input Voltage Range
(Note 7),
(Note 8)
1.0
3.0
±VCC = ±15V
(Note 8)
(Note 6)
-12
12
V
V
1, 2, 3
1, 2, 3
VSat
Output Saturation Voltage
±VCC = ±15V, IO = 25mA,
VI ≤ -5mV
1.5
+VCC = 3.5V, -VCC = -1V,
VI ≤ -6mV, IO ≤ 3.2mA
±VCC = ±15V, Delta VO = 12V,
RL = 1.4KΩ
0.4
0.6
V
V
1, 2
3
AV
Voltage Gain
(Note 9)
(Note 9)
10.5
10
K
K
K
4
5, 6
4
+VCC = 5V, -VCC = 0V,
(Note 7),
(Note 9)
8.0
Delta VO = 4.5V, RL = 1.4KΩ
(Note 7),
(Note 9)
5.0
5.8
80
K
K
5
6
4
(Note 7),
(Note 9)
CMRR
Common Mode Rejection Ratio ±VCC = ±15V, VCM = ±12V
dB
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8
SMD 5962-9679801, HIGH DOSE RATE DC DELTA Parameters
The following conditions apply, unless otherwise specified.
VCM = 0V, Delta calculations performed on QMLV devices at group B, subgroup 5 only.
Sub-
groups
Symbol
+ICC
Parameter
Conditions
Notes
Min Max
Units
Positive Supply Current
±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
-1.0
-0.5
-0.4
1.0
0.5
0.4
mA
1
1
1
-ICC
VIO
Negative Supply Current
Input Offset Voltage
mA
mV
+VCC = 5V, VCM = 1V, RS ≤ 5KΩ
SMD 5962-9679801, High Dose Rate
100K Post Radiation Parameters @ 25°C
(Note 13)
The following conditions apply, unless otherwise specified. VCM = 0V
Sub-
groups
Symbol
IIB
Parameter
Input Bias Current
Conditions
Notes
Min Max
Units
±VCC = ±15V
VCC = 5V
1.0
1.0
µA
µA
1
1
1
+VCC = 5V, VCM = 1V, RS ≤ 5KΩ
+VCC = 5V, VCM = 3V, RS ≤ 5KΩ
VIO
Input Offset Voltage
-4.0
-4.0
-4.0
4.0
4.0
4.0
mV
mV
mV
1
1
±VCC = ±15V, VCM = 12V, RS ≤
5KΩ
-4.0
4.0
mV
1
±VCC = ±15V, VCM = −12V, RS ≤
5KΩ
9
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LM119 Electrical Characteristics SMD 5962-9679802, ELDRS FREE
DC Parameters
The following conditions apply, unless otherwise specified. VCM = 0V
Sub-
groups
Symbol
+ICC
Parameter
Conditions
Notes
Min Max
Units
Positive Supply Current
±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
11
11.5
-4.2
mA
mA
mA
mA
mA
µA
1
2, 3
1
-ICC
Negative Supply Current
-4.5
2
-6.0
3
ILeak
IIB
Output Leakage Current
Input Bias Current
+VCC = 15V, -VCC = -1V,
VGnd = 0V, VO = 35V
(Note 6)
(Note 6)
1.8
1
10
µA
2, 3
1
±VCC = ±15V
0.475
0.95
0.475
.95
µA
µA
2, 3
1
+VCC = 5V
(Note 7)
(Note 7)
(Note 7)
(Note 7)
(Note 7)
(Note 7)
µA
µA
2, 3
1
+VCC = 5V, VCM = 1V, RS ≤ 5KΩ
VIO
Input Offset Voltage
-3.8
-6.8
-3.8
-6.8
3.8
6.8
3.8
6.8
mV
mV
mV
mV
2, 3
1
+VCC = 5V, VCM = 3V,
RS ≤ 5KΩ
2, 3
±VCC = ±15V, VCM = 12V,
-3.8
-6.8
3.8
6.8
mV
mV
1
2, 3
RS ≤ 5KΩ
±VCC = ±15V, VCM = -12V,
RS ≤ 5KΩ
-3.8
-6.8
3.8
6.8
mV
mV
1
2, 3
IIO
Input Offset Current
+VCC = 5V, VCM = 1V
(Note 7)
(Note 7)
(Note 7)
(Note 7)
-75
75
nA
nA
nA
nA
nA
nA
nA
nA
V
1
2, 3
1
-100 100
-75 75
-100 100
-75 75
-100 100
-75 75
-100 100
+VCC = 5V, VCM = 3V
±VCC = ±15V, VCM = 12V
±VCC = ±15V, VCM = -12V
+VCC = 5V
2, 3
1
2, 3
1
2, 3
1, 2, 3
VI
Input Voltage Range
(Note 8),
(Note 8)
1.0
3.0
±VCC = ±15V
(Note 8)
(Note 6)
-12
12
V
V
1, 2, 3
1, 2, 3
VSat
Output Saturation Voltage
±VCC = ±15V, IO = 25mA,
VI ≤ -5mV
1.5
+VCC = 3.5V, -VCC = -1V,
VI ≤ -6mV, IO ≤ 3.2mA
±VCC = ±15V, Delta VO = 12V,
RL = 1.4KΩ
0.4
0.6
V
V
1, 2
3
AV
Voltage Gain
(Note 9)
(Note 9)
10.5
10
K
K
K
4
5, 6
4
+VCC = 5V, -VCC = 0V,
(Note 7),
(Note 9)
8.0
Delta VO = 4.5V, RL = 1.4KΩ
(Note 7),
(Note 9)
5.0
5.8
80
K
K
5
6
4
(Note 7),
(Note 9)
CMRR
Common Mode Rejection Ratio ±VCC = ±15V, VCM = ±12V
dB
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10
SMD 5962-9679802, ELDRS FREE DC DELTA Parameters
The following conditions apply, unless otherwise specified.
VCM = 0V, Delta calculations performed on QMLV devices at group B, subgroup 5 only.
Sub-
groups
Symbol
+ICC
Parameter
Conditions
Notes
Min Max
Units
Positive Supply Current
±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
-1.0
-0.5
-0.4
1.0
0.5
0.4
mA
1
1
1
-ICC
VIO
Negative Supply Current
Input Offset Voltage
mA
mV
+VCC = 5V, VCM = 1V, RS ≤ 5KΩ
SMD 5962-9679802, ELDRS FREE 100K Post Radiation Parameters @ 25°C
(Note 14)
The following conditions apply, unless otherwise specified. VCM = 0V
Sub-
groups
Symbol
IIB
Parameter
Input Bias Current
Conditions
±VCC = ±15V
Notes
Min Max
Units
1.0
1.0
µA
µA
1
1
1
VCC = 5V
+VCC = 5V, VCM = 1V, RS ≤ 5KΩ
+VCC = 5V, VCM = 3V, RS ≤ 5KΩ
VIO
Input Offset Voltage
-4.0
-4.0
-4.0
4.0
4.0
4.0
mV
mV
mV
1
1
±VCC = ±15V, VCM = 12V, RS ≤
5KΩ
-4.0
4.0
mV
1
±VCC = ±15V, VCM = −12V, RS ≤
5KΩ
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/
θ
JA or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 4: For supply voltages less than ±15V the absolute maximum input voltage is equal to the supply voltage.
Note 5: Human Body model, 1.5KΩ in series with 100pF.
Note 6: VI ≥ 8mV at extremes for ILeak and VI ≤ −8mV at extremes for VSat (VI to exceed VOS
.
Note 7: 5V differential across +VCC and −VCC
.
Note 8: Parameter guaranteed by VIO and IIO tests.
Note 9: K = V/mV.
Note 10: Gain is computed with an output swing from +13.5V to +1.5V.
Note 11: Gain is computed with an output swing from +5.0V to +0.5V.
Note 12: Output is monitored by measuring VI with limits from 0 to 6mV at all temperatures
Note 13: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate sensitivity. Radiation end point limits for the noted
parameters are guaranteed only for the conditions as specified in MIL-STD-883, per Test Method 1019, Condition A.
Note 14: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
Low dose rate testing has been performed on a wafer-by-wafer basis, per Test Method 1019, Condition D of MIL-STD-883, with no enhanced low dose rate
sensitivity (ELDRS).
11
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Typical Performance Characteristics
Input Currents
Common Mode Limits
20143710
20143711
Transfer Function
Response Time for Various
Input Overdrives
20143712
20143713
Response Time for Various
Input Overdrives
Input Characteristics
20143715
20143714
www.national.com
12
Response Time for Various
Input Overdrives
Response Time for Various
Input Overdrives
20143716
20143717
Output Saturation Voltage
Supply Current
20143718
20143719
Supply Current
Output Limiting
Characteristics
20143720
20143721
13
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Typical Applications (Note Pin numbers are for metal can package. )
Relay Driver
20143705
Note 15: Pin numbers are for metal can package.
Window Detector
20143706
VOUT = 5V for VLT ≤ VIN ≤ VUT
VOUT = 0 for VIN ≤ VLTor VIN ≥ VUT
www.national.com
14
Revision History
Date Released Revision
Section
New release to corporate format
Originator
Changes
07/24/08
A
L. Lytle
2 MDS datasheets converted into one
corporate data sheet format. Added Radiation
information. MDS data sheets MNLM119-X
Rev. 0F1 & MDLM119-X Rev 2A2 will be
archived.
01/13/09
B
Features, Ordering Info., Electrical
Section, Notes 13 and 14
Larry McGee Added reference to ELDRS and Die NSID's to
data sheet. Correction from: 100k rd(Si) to 100
krad(Si) in ordering info. Changed wording in
Notes 13 and 14 Revision A will be Archived.
15
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Physical Dimensions inches (millimeters) unless otherwise noted
Metal Can Package (H)
NS Package Number H10C
Cavity Dual-In-Line Package (J)
NS Package Number J14A
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16
Ceramic Flatpack (W)
NS Package Number W10A
Ceramic SOIC (WG)
NS Package Number WG10A
17
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Metal Leadless Chip Carrier (LCC)
NS Package Number E20A
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18
Notes
19
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Notes
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相关型号:
LM119E/883
IC DUAL COMPARATOR, 4000 uV OFFSET-MAX, 80 ns RESPONSE TIME, CQCC20, LCC-20, Comparator
NSC
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