LM3668 [TI]

1-A, High-Efficiency Dual-Mode Single-Inductor Buck-Boost DC-DC Converter;
LM3668
型号: LM3668
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
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1-A, High-Efficiency Dual-Mode Single-Inductor Buck-Boost DC-DC Converter

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LM3668  
SNVS449O JUNE 2007REVISED APRIL 2015  
LM3668 1-A, High-Efficiency Dual-Mode Single-Inductor Buck-Boost DC-DC Converter  
1 Features  
2 Applications  
1
45-µA Typical Quiescent Current  
Handset Peripherals  
MP3 Players  
For 2.8-V-3.3-V and 3-V-3.4-V Versions:  
Pre-Regulation for Linear Regulators  
PDAs  
1-A Maximum Load Current for  
VIN = 2.8 V to 5.5 V  
800-mA Maximum Load Current for  
VIN = 2.7 V  
Portable Hard Disk Drives  
WiMax Modems  
600-mA Maximum Load Current for  
VIN = 2.5 V  
3 Description  
For 4.5 V-5 V  
The LM3668 is a synchronous buck-boost DC-DC  
converter optimized for powering low voltage circuits  
from a Li-Ion battery and input voltage rails between  
2.5 V and 5.5 V. It has the capability to support up to  
1-A output current over the output voltage range. The  
LM3668 regulates the output voltage over the  
complete input voltage range by automatically  
switching between buck or boost modes depending  
on the input voltage.  
1-A Maximum Load Current for  
VIN = 3.9 V to 5.5 V  
800-mA Maximum Load Current for  
VIN = 3.4 V to 3.8 V  
700-mA Maximum Load Current for  
VIN = 3 V to 3.3 V  
600-mA Maximum Load Current for  
VIN = 2.7 V to 2.9 V  
The LM3668 has 2 N-channel MOSFETS and 2 P-  
channel MOSFETS arranged in a topology that  
provides continuous operation through the buck and  
boost operating modes. There is a MODE pin that  
allows the user to choose between an intelligent  
automatic PFM-PWM mode operation and forced  
2.2-MHz PWM Fixed Switching Frequency  
(Typical)  
Automatic PFM-PWM Mode or Forced PWM  
Mode  
PWM operation. During PWM mode,  
a fixed-  
Wide Input Voltage Range: 2.5 V to 5.5 V  
frequency 2.2 MHz (typical) is used. PWM mode  
drives load up to 1 A. Hysteretic PFM mode extends  
the battery life through reduction of the quiescent  
current to 45 µA (typical) at light loads during system  
standby. Internal synchronous rectification provides  
high efficiency. In shutdown mode (EN pin pulled  
low), the device turns off and reduces battery  
consumption to 0.01 µA (typical).  
Internal Synchronous Rectification for High  
Efficiency  
Internal Soft Start: 600-µs Maximum Start-Up  
Time After VIN Settled  
0.01-µA Typical Shutdown Current  
Current Overload and Thermal Shutdown  
Protection  
A high switching frequency of 2.2 MHz (typical)  
allows the use of tiny surface-mount components  
including a 2.2-µH inductor, a 10-µF input capacitor,  
and a 22-µF output capacitor.  
Frequency Sync Pin: 1.6 MHz to 2.7 MHz  
Typical Application Circuit  
VIN = 2.5V - 5.5V  
Device Information(1)  
C1  
10 PF  
VDD  
SW1  
PVIN  
VOUT  
2.8V/3.3V  
PART NUMBER  
LM3668  
PACKAGE  
BODY SIZE (NOM)  
FB  
2.2 PH  
WSON (12)  
3.00 mm x 3.00 mm  
LM3668  
C2  
22 PF  
SW2  
SYNC/MODE  
(1) For all available packages, see the orderable addendum at  
the end of the datasheet.  
L = 2.8V  
H = 3.3V  
EN  
NC  
VSEL  
SGND PGND  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
 
LM3668  
SNVS449O JUNE 2007REVISED APRIL 2015  
www.ti.com  
Table of Contents  
8.3 Feature Description................................................. 14  
8.4 Device Functional Modes........................................ 16  
Application and Implementation ........................ 19  
9.1 Application Information............................................ 19  
9.2 Typical Application .................................................. 19  
1
2
3
4
5
6
7
Features.................................................................. 1  
Applications ........................................................... 1  
Description ............................................................. 1  
Revision History..................................................... 2  
Device Comparison Table..................................... 3  
Pin Configuration and Functions......................... 3  
Specifications......................................................... 4  
7.1 Absolute Maximum Ratings ...................................... 4  
7.2 ESD Ratings.............................................................. 4  
7.3 Recommended Operating Conditions....................... 4  
7.4 Thermal Information.................................................. 5  
7.5 Electrical Characteristics........................................... 5  
7.6 Typical Characteristics.............................................. 6  
Detailed Description ............................................ 13  
8.1 Overview ................................................................. 13  
8.2 Functional Block Diagram ....................................... 14  
9
10 Power Supply Recommendations ..................... 23  
11 Layout................................................................... 23  
11.1 Layout Guidelines ................................................. 23  
11.2 Layout Example .................................................... 23  
12 Device and Documentation Support ................. 24  
12.1 Device Support...................................................... 24  
12.2 Trademarks........................................................... 24  
12.3 Electrostatic Discharge Caution............................ 24  
12.4 Glossary................................................................ 24  
8
13 Mechanical, Packaging, and Orderable  
Information ........................................................... 24  
4 Revision History  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
Changes from Revision N (August 2014) to Revision O  
Page  
Changed RθJA value from 34 to 47.3; change 20 PINS to 12 PINS in header; add additional thermal information............... 5  
Changes from Revision M (May 2013) to Revision N  
Page  
Added Pin Configuration and Functions section, Handling Rating table, Feature Description section, Device  
Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout  
section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information  
section ................................................................................................................................................................................... 1  
Changes from Revision L (April 2013) to Revision M  
Page  
Changed layout of National Data Sheet to TI format ........................................................................................................... 23  
2
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LM3668  
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SNVS449O JUNE 2007REVISED APRIL 2015  
5 Device Comparison Table  
OUTPUT VOLTAGE  
ORDER NUMBER  
PACKAGE  
PACKAGE MARKING  
SUPPLIED AS  
(V)  
LM3668SD-2833/NOPB  
LM3668SDX-2833/NOPB  
LM3668SD-3034/NOPB  
LM3668SDX-3034/NOPB  
LM3668SD-4550/NOPB  
LM3668SDX-4550/NOPB  
2.8, VSEL = low  
3.3, VSEL = high  
S017B  
S018B  
S019B  
1000 units, tape-and-reel  
4500 units, tape-and-reel  
1000 units, tape-and-reel  
4500 units, tape-and-reel  
1000 units, tape-and-reel  
4500 units, tape-and-reel  
3, VSEL = low  
3.4, VSEL = high  
DQB (WSON)  
4.5, VSEL = low  
5, VSEL = high  
6 Pin Configuration and Functions  
DQB Package  
12-Pin WSON  
Top View  
DQB Package  
12-Pin WSON  
Bottom View  
VOUT  
SW2  
1
2
12  
11  
10  
9
FB  
FB  
12  
1
VOUT  
VSEL  
VSEL  
11  
10  
9
2
3
4
5
6
SW2  
MODE/  
SYNC  
3
MODE/  
SYNC  
PGND  
SW1  
PGND  
SW1  
DAP  
DAP  
4
SGND  
NC  
SGND  
NC  
5
6
8
PVIN  
EN  
8
PVIN  
EN  
VDD  
7
7
VDD  
Pin Functions(1)  
PIN  
TYPE  
DESCRIPTION  
NO.  
NAME  
VOUT  
SW2  
1
2
A
A
Connect to output capacitor.  
Switching node connection to the internal PFET switch (P2) and NFET synchronous  
rectifier (N2).  
3
4
PGND  
SW1  
G
A
Power ground.  
Switching node connection to the internal PFET switch (P1) and NFET synchronous  
rectifier (N1).  
5
6
7
PVIN  
EN  
P
I
Supply to the power switch, connect to the input capacitor.  
Enable input. Set this digital input high for normal operation. For shutdown, set low.  
VDD  
P
Signal supply input. If board layout is not optimum an optional 1-µF ceramic capacitor  
is suggested as close to this pin as possible.  
8
9
NC  
-
G
I
No connect. Connect this pin to SGND on PCB layout.  
Analog and Control Ground.  
SGND  
10  
MODE/SYNC  
Mode = LOW, Automatic Mode. Mode= HI, forced PWM Mode. SYNC = external clock  
synchronization from 1.6 MHz to 2.7 MHz.(When SYNC function is used, device is  
forced in PWM mode).  
11  
VSEL  
I
Voltage selection pin; (for example, 2.8-V-3.3-V option) logic input low (or GND) = 2.8  
V and logic high = 3.3 V (or VIN) to set output voltage.  
12  
FB  
A
-
Feedback analog input. Connect to the output at the output filter.  
DAP  
DAP  
Die Attach Pad, connect the DAP to SGND on PCB layout to enhance thermal  
performance. It should not be used as a primary ground connection.  
(1) A: Analog Pin, G: Ground Pin, P: Power Pin, I: Digital Input Pin  
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SNVS449O JUNE 2007REVISED APRIL 2015  
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7 Specifications  
7.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)(2)  
MIN  
MAX  
UNIT  
PVIN, VDD, SW1, SW2 & VOUT pins: voltage to SGND & PGND  
FB, EN, and MODE/SYNC pins  
–0.2  
(PGND and SGND-0.2)  
–0.2  
6
(PVIN + 0.2)  
0.2  
V
V
V
PGND to SGND  
Continuous power dissipation(3)  
Internally Limited  
Maximum junction temperature (TJ-MAX  
)
125  
260  
150  
°C  
°C  
°C  
Maximum lead temperature (soldering, 10 sec)  
Storage temperature , Tstg  
–65  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and  
specifications.  
(3) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may  
have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP  
125ºC), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the  
part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).  
=
7.2 ESD Ratings  
VALUE  
UNIT  
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)  
±2500  
V(ESD)  
Electrostatic discharge  
V
Charged-device model (CDM), per JEDEC specification JESD22-  
C101(2)  
±1250  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
7.3 Recommended Operating Conditions  
MIN  
MAX  
5.5  
1
UNIT  
V
Input voltage  
2.5  
0
Recommended load current  
A
Junction temperature (TJ)  
40  
40  
125  
85  
°C  
°C  
(1)  
Ambient temperature (TA)  
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may  
have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP  
125ºC), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the  
part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).  
=
4
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SNVS449O JUNE 2007REVISED APRIL 2015  
7.4 Thermal Information  
LM3668  
THERMAL METRIC(1)  
DQB (WSON)  
12 PINS  
47.3  
UNIT  
RθJA  
Junction-to-ambient thermal resistance, WSON package(2)  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
RθJC(top)  
RθJB  
43..4  
21.6  
°C/W  
ψJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
0.4  
ψJB  
21.7  
RθJC(bot)  
3.5  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.  
(2) Junction-to-ambient thermal resistance (RθJA) is taken from a thermal modeling result, performed under the conditions and guidelines  
set forth in the JEDEC standard JESD51-7. The test board is a 4-layer FR-4 board measuring 101.6 mm x 76.2 mm x 1.6 mm.  
Thickness of the copper layers are 2oz/1oz/1oz/2oz. The middle layer of the board is 60 mm x 60 mm. Ambient temperature in  
simulation is 22°C, still air. Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications  
where high maximum power dissipation exists, special care must be paid to thermal dissipation issues in board design.  
7.5 Electrical Characteristics  
Unless otherwise noted, specifications apply to the LM3668. VIN = 3.6 V = EN, VOUT = 3.3 V. For VOUT = 4.5V-5 V, VIN  
4 V.(1)(2)  
=
PARAMETER  
TEST CONDITIONS  
40°C TA 85°C, see(2)  
Open loop(3)  
MIN  
TYP  
1.85  
0.01  
MAX  
UNIT  
VFB  
ILIM  
Feedback voltage  
–3%  
3%  
Switch peak current limit  
Switch peak current limit  
Shutdown supply current  
Shutdown supply current  
A
Open loop(3), 40°C TA 85°C  
1.6  
2.05  
1
EN = 0 V  
ISHDN  
µA  
EN = 0 V, 40°C TA 85°C  
No load, device is not switching (FB  
forced higher than programmed output  
voltage)  
DC bias current in PFM  
45  
IQ_PFM  
µA  
No load, device is not switching (FB  
forced higher than programmed output  
voltage)  
DC bias current in PFM  
60  
40°C TA 85°C  
DC bias current in PWM  
DC bias current in PWM  
PWM mode, no switching  
600  
IQ_PWM  
µA  
PWM mode, no switching  
40°C TA 85°C  
750  
RDSON(P)  
RDSON(N)  
Pin-pin resistance for PFET  
Pin-pin resistance for NFET  
Switches P1 and P2  
Switches N1 and N2  
PWM mode  
130  
100  
2.2  
180  
150  
mΩ  
mΩ  
FOSC  
Internal oscillator frequency  
MHz  
PWM mode, 40°C TA 85°C  
VIN = 3.6 V  
1.9  
1.6  
2.5  
2.7  
FSYNC  
VIH  
Sync frequency range  
MHz  
V
Logic high input for EN,  
MODE/SYNC pins  
40°C TA 85°C  
40°C TA 85°C  
1.1  
Logic low input for EN,  
MODE/SYNC pins  
VIL  
0.4  
1
V
0.3  
IEN, MODE,  
SYNC  
EN, MODE/SYNC pins input current  
µA  
40°C TA 85°C  
(1) All voltages with respect to SGND.  
(2) Minimum and Maximum limits are specified by design, test, or statistical analysis. Typical numbers are not ensured, but do represent the  
most likely norm.  
(3) Electrical Characteristics table reflects open loop data (FB = 0 V and current drawn from SW pin ramped up until cycle-by-cycle current  
limits is activated). Closed loop current limit is the peak inductor current measured in the application circuit by increasing output current  
until output voltage drops by 10%.  
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7.6 Typical Characteristics  
Typical Application Circuit (see Figure 46): VIN = 3.6 V, L = 2.2 µH, CIN = 10 µF, COUT = 22 µF(4), TA = 25°C , unless otherwise  
stated.  
900  
800  
700  
600  
500  
400  
300  
200  
2.4  
2.3  
2.2  
2.1  
2.0  
1.9  
V
= 2.5V  
IN  
V
= 3.6V  
IN  
V
= 5.5V  
IN  
-40 -20  
0
20  
40  
60  
80 100  
-40 -20  
0
20  
40  
60  
80 100  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 1. Supply Current vs Temperature (Not Switching)  
(VOUT = 3.4 V)  
Figure 2. Switching Frequency vs. Temperature  
(VOUT = 3.4 V)  
150  
200  
PFET_RDS = 2.5V  
PFET_RDS = 2.7V  
NFET = 2.7V  
NFET = 2.5V  
175  
150  
125  
100  
75  
125  
100  
75  
NFET = 5.5V  
NFET = 3.6V  
50  
25  
0
PFET_RDS = 3.6V  
50  
PFET_RDS = 5.5V  
25  
0
-40 -20  
0
20  
40  
60  
80 100  
-40 -20  
0
20  
40  
60  
80 100  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 3. NFET_RDS (on) vs. Temperature (VOUT = 3.4 V)  
Figure 4. PFET_RDS (on) vs. Temperature (VOUT = 3.4 V)  
2.00  
100  
90  
1.95  
1.90  
80  
V
= 2.5V  
IN  
70  
60  
50  
40  
30  
20  
10  
0
V
= 3.6V  
V
= 2.7V  
IN  
IN  
1.85  
1.80  
1.75  
1.70  
V
= 5.0V  
IN  
V
= 3.6V  
IN  
-40 -20  
0
20  
40  
60  
80 100  
0
1
10  
100  
1000  
TEMPERATURE (°C)  
LOAD (mA)  
Figure 5. ILIMIT vs. Temperature (VOUT = 3.4 V)  
Figure 6. Efficiency at VOUT = 2.8 V (Forced PWM Mode)  
(4) CIN and COUT: Low-ESR Surface-Mount Ceramic Capacitors (MLCCs) used in setting electrical characteristics. COUT_MIN should not  
exceed 40% of suggested value. The preferable choice would be a type and make MLCC that issues –30% over the operating  
temperature and voltage range.  
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Typical Characteristics (continued)  
Typical Application Circuit (see Figure 46): VIN = 3.6 V, L = 2.2 µH, CIN = 10 µF, COUT = 22 µF(4), TA = 25°C , unless otherwise  
stated.  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 2.5V  
= 2.7V  
IN  
V
= 2.5V  
IN  
V
= 2.7V  
V
IN  
IN  
V
= 3.6V  
IN  
V
= 5.0V  
IN  
= 5.5V  
V
= 5.0V  
V
IN  
IN  
V
= 3.6V  
10  
IN  
0
1
10  
100  
1000  
0
1
100  
1000  
LOAD (mA)  
LOAD (mA)  
Figure 7. Efficiency at VOUT = 2.8 V (Auto Mode)  
Figure 8. Efficiency at VOUT = 3 V (Forced PWM Mode)  
100  
90  
80  
V
IN  
= 2.5V  
70  
60  
50  
40  
30  
20  
10  
0
V
IN  
= 2.7V  
V
= 3.3V  
IN  
V
= 3.6V  
IN  
10  
0
1
100  
1000  
LOAD (mA)  
Figure 9. Efficiency at VOUT = 3 V (Auto Mode)  
Figure 10. Efficiency at VOUT = 3.3 V (Forced PWM Mode)  
100  
90  
100  
90  
80  
80  
V
= 2.5V  
V
= 2.5V  
= 2.7V  
IN  
IN  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
V
= 2.7V  
IN  
V
= 3.3V  
V
IN  
IN  
V
= 3.6V  
IN  
V
= 5.5V  
IN  
V
= 5.0V  
IN  
V
= 5.5V  
IN  
V
= 3.6V  
IN  
0
1
10  
LOAD (mA)  
100  
1000  
0
1
10  
LOAD (mA)  
100  
1000  
Figure 11. Efficiency at VOUT = 3.3 V (Auto Mode)  
Figure 12. Efficiency at VOUT = 3.4 V (Forced PWM Mode)  
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Typical Characteristics (continued)  
Typical Application Circuit (see Figure 46): VIN = 3.6 V, L = 2.2 µH, CIN = 10 µF, COUT = 22 µF(4), TA = 25°C , unless otherwise  
stated.  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 5V  
IN  
V
= 2.5V  
IN  
V
= 5.0V  
IN  
V
= 2.7V  
IN  
= 3.6V  
V
= 2.7V  
IN  
V
IN  
V
= 3.6V  
IN  
0
1
10  
100  
1000  
0
1
10  
LOAD (mA)  
100  
1000  
LOAD (mA)  
Figure 13. Efficiency at VOUT = 3.4 V (Auto Mode)  
Figure 14. Efficiency at VOUT = 4.5 V (Forced PWM Mode)  
100  
90  
80  
70  
60  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 3.6V  
IN  
V
= 2.7V  
IN  
50  
40  
30  
20  
10  
0
V
= 3.6V  
IN  
V
= 5.0V  
V
= 2.7V  
IN  
IN  
V
= 5.0V  
IN  
1
0
1
10  
LOAD (mA)  
100  
1000  
0
10  
LOAD (mA)  
100  
1000  
Figure 15. Efficiency at VOUT = 4.5 V (Auto Mode)  
Figure 16. Efficiency at VOUT = 5 V (Forced PWM Mode)  
100  
90  
4.5V  
80  
V
V
3.7V  
IN  
70  
60  
50  
40  
30  
20  
10  
0
V
= 3.6V  
IN  
V
=5.0V  
IN  
OUT_AC  
100 mV/DIV  
5V/DIV  
SW2  
SW1  
V
= 2.7V  
IN  
5V/DIV  
0
1
10  
LOAD (mA)  
100  
1000  
100 Ps/DIV  
Figure 18. Line Transient in Buck Mode (VOUT = 3.4 V, Load  
= 500 mA)  
Figure 17. Efficiency at VOUT = 5 V (Auto Mode)  
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Typical Characteristics (continued)  
Typical Application Circuit (see Figure 46): VIN = 3.6 V, L = 2.2 µH, CIN = 10 µF, COUT = 22 µF(4), TA = 25°C , unless otherwise  
stated.  
3.4V  
4.0V  
V
IN  
2.8V  
3.4V  
V
V
IN  
100 mV/DIV  
V
OUT_AC  
OUT_AC  
100 mV/DIV  
SW2  
5V/DIV  
5V/DIV  
5V/DIV  
5V/DIV  
SW2  
SW1  
SW1  
100 Ps/DIV  
100 Ps/DIV  
Figure 19. Line Transient in Boost Mode (VOUT = 3.4 V, Load  
= 500 mA)  
Figure 20. Line Transient in Buck-Boost Mode (VOUT = 3.4 V,  
Load = 500 mA)  
SW2  
5V/DIV  
SW2  
5V/DIV  
5V/DIV  
5V/DIV  
SW1  
SW1  
200  
mv/DIV  
V
OUT_AC  
200 mV/DIV  
V
OUT_AC  
500  
mA/DIV  
LOAD  
500 mA/DIV  
LOAD  
100 Ps/DIV  
100 Ps/DIV  
Figure 22. Load Transient in Boost Operation (Forced PWM  
Mode) VIN = 2.7 V, VOUT = 3.4 V, Load = 0 to 500 mA  
Figure 21. Load Transient in Buck Mode (Forced PWM  
Mode) VIN = 4.2 V, VOUT = 3.4 V, Load = 0 to 500 mA  
Figure 23. Load Transient in Buck-Boost Operation (Forced  
PWM Mode) VIN = 3.44 V, VOUT = 3.4 V, Load = 0 to 500 mA  
Figure 24. Load Transient in Buck Mode (Forced PWM  
Mode) VIN = 4.2 V, VOUT = 3 V, Load = 0 to 500 mA  
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Typical Characteristics (continued)  
Typical Application Circuit (see Figure 46): VIN = 3.6 V, L = 2.2 µH, CIN = 10 µF, COUT = 22 µF(4), TA = 25°C , unless otherwise  
stated.  
Figure 25. Load Transient in Boost Mode (Forced PWM  
Mode) VIN = 2.7 V, VOUT = 3 V, Load = 0 to 500 mA  
Figure 26. Load Transient in Buck-Boost Mode (Forced  
PWM Mode) VIN = 3.05 V, VOUT = 3 V, Load = 0 to 500 mA  
Figure 27. Load Transient in Buck Mode (Auto Mode) VIN  
4.2 V, VOUT = 3.3 V, Load = 50 to 150 mA  
=
Figure 28. Load Transient in Boost Mode (Auto Mode) VIN  
2.7 V, VOUT = 3.3 V, Load = 50 to 150 mA  
=
Figure 29. Load Transient in Buck-Boost Mode (Auto Mode)  
VIN = 3.6 V, VOUT = 3.3 V, Load = 50-150 mA  
Figure 30. Load Transient in Buck Mode (Forced PWM  
Mode) VIN = 5.5 V, VOUT = 5 V, Load = 0 to 500 mA  
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Typical Characteristics (continued)  
Typical Application Circuit (see Figure 46): VIN = 3.6 V, L = 2.2 µH, CIN = 10 µF, COUT = 22 µF(4), TA = 25°C , unless otherwise  
stated.  
Figure 31. Load Transient in Boost Mode (Forced PWM  
Mode) VIN = 3.5 V, VOUT = 5 V, Load = 0 to 500 mA  
Figure 32. Typical Switching Waveform in Boost Mode  
(PWM Mode) VIN = 2.7 V, VOUT = 3 V, Load = 500 mA  
SW2  
2V/DIV  
2V/DIV  
SW1  
V
50  
OUT_AC  
mv/DIV  
500  
mA/DIV  
LOAD  
5 Ps/DIV  
Figure 33. Typical Switching Waveform in Buck Mode (PWM  
Mode) VIN = 3.6 V, VOUT = 3 V, Load = 500 mA  
Figure 34. Typical Switching Waveformt in Boost Mode  
(PFM Mode) VIN = 2.7 V, VOUT = 3 V, Load = 50 mA  
SW2  
5V/DIV  
5V/DIV  
SW2  
SW1  
5V/DIV  
5V/DIV  
SW1  
V
50  
mv/DIV  
V
OUT_AC  
50  
OUT_AC  
mv/DIV  
500  
LOAD  
mA/DIV  
500  
mA/DIV  
LOAD  
200 ns/DIV  
5 Ps/DIV  
Figure 36. Typical Switching Waveform in Boost Mode  
(PWM Mode) VIN = 3 V, VOUT = 3.4 V, Load = 500 mA  
Figure 35. Typical Switching Waveform in Buck Mode (PFM  
Mode) VIN = 3.6 V, VOUT = 3 V, Load = 50mA  
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Typical Characteristics (continued)  
Typical Application Circuit (see Figure 46): VIN = 3.6 V, L = 2.2 µH, CIN = 10 µF, COUT = 22 µF(4), TA = 25°C , unless otherwise  
stated.  
SW2  
SW1  
2V/DIV  
2V/DIV  
50  
mv/DIV  
V
OUT_AC  
500  
mA/DIV  
LOAD  
500 Ps/DIV  
Figure 37. Typical Switching Waveform in Buck Mode (PWM  
Mode) VIN = 4 V, VOUT = 3.4 V, Load = 500 mA  
Figure 38. Typical Switching Waveform in Boost Mode (PFM  
Mode) VIN = 3 V, VOUT = 3.4 V, Load = 50 mA  
SW2  
SW1  
5V/DIV  
5V/DIV  
50  
mv/DIV  
V
OUT_AC  
500  
mA/DIV  
LOAD  
500 Ps/DIV  
Figure 39. Typical Switching Waveform in Buck Mode (PFM Mode) VIN = 4 V, VOUT = 3.4 V, Load = 50 mA  
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8 Detailed Description  
8.1 Overview  
The LM3668, a high-efficiency buck or boost DC-DC converter, delivers a constant voltage from either a single  
Li-Ion or three cell NIMH/NiCd battery to portable devices such as mobile phones and PDAs. Using a voltage  
mode architecture with synchronous rectification, the device has the ability to deliver up to 1 A, depending on the  
input voltage, output voltage, ambient temperature and the chosen inductor.  
In addition, the device incorporates a seamless transition from buck-to-boost or boost-to-buck mode. The internal  
error amplifier continuously monitors the output to determine the transition from buck-to-boost or boost-to-buck  
operation. Figure 40 shows the four switches network used for the buck and boost operation. Table 1  
summarizes the state of the switches in different modes.  
There are three modes of operation depending on the current required: Pulse Width Modulation (PWM), Pulse  
Frequency Modulation (PFM), and shutdown. The device operates in PWM mode at load currents of  
approximately 80 mA or higher to improve efficiency. Lighter load current causes the device to automatically  
switch into PFM mode to reduce current consumption and extend battery life. Shutdown mode turns off the  
device, offering the lowest current consumption.  
V
V
OUT  
IN  
P1  
N1  
P2  
SW1  
SW2  
N2  
Figure 40. Simplified Diagram of Switches  
Table 1. State of Switches in Different Modes  
MODE  
Buck  
ALWAYS ON  
SW P2  
ALWAYS OFF  
SW N2  
SWITCHING  
SW P1 & N1  
SW N2 & P2  
Boost  
SW P1  
SW N1  
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8.2 Functional Block Diagram  
Sw1  
Sw2  
P2  
P1  
PV  
IN  
VOUT  
Switch  
buffer  
Switch  
buffer  
N2  
N1  
NC  
VDD  
PFM_hi  
Control Logic  
PFM  
Generator  
PFM_low  
FB  
VSEL  
Error  
Amp  
PWM  
Comparator  
SYNC/  
MODE  
Buffer  
+
VREF  
-
2 MHz  
Oscillator  
Ramp  
Generator  
EN  
Soft  
Start  
PGND  
SGND  
8.3 Feature Description  
8.3.1 Buck Operation  
When the input voltage is greater than the output voltage, the device operates in buck mode where switch P2 is  
always ON and P1 and N1 control the output. Figure 41 shows the simplified circuit for buck mode operation.  
P1  
SW2  
SW1  
P2  
VIN  
+
N1  
Load  
-
Figure 41. Simplified Circuit for Buck Operation  
8.3.2 Boost Operation  
When the input voltage is smaller than the output voltage, the device enters boost mode operation where P1 is  
always ON, while switches N2 and P2 control the output. Figure 42 shows the simplified circuit for boost mode  
operation.  
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Feature Description (continued)  
P2  
P1  
SW1  
SW2  
VIN  
Load  
+
-
N2  
Figure 42. Simplified Circuit for Boost Operation  
8.3.3 Internal Synchronous Rectification  
While in PWM mode, the LM3668 uses an internal MOSFET as a synchronous rectifier to reduce rectifier forward  
voltage drop and associated power loss. Synchronous rectification provides a significant improvement in  
efficiency whenever the output voltage is relatively low compare to the voltage drop across an ordinary rectifier  
diode.  
8.3.4 Current Limit Protection  
The LM3668 has current limit protection to prevent excessive stress on itself and external components during  
overload conditions. The internal current limit comparator will disable the power device at a typical switch peak  
current limit of 1.85 A (typ.).  
8.3.5 Undervoltage Protection  
The LM3668 has an UVP comparator to turn the power device off in case the input voltage or battery voltage is  
too low . The typical UVP threshold is around 2 V.  
8.3.6 Short Circuit Protection  
When the output of the LM3668 is shorted to GND, the current limit is reduced to about half of the typical current  
limit value until the short is removed.  
8.3.7 Shutdown  
When the EN pin is pulled low, P1 and P2 are off; N1 and N2 are turned on to pull SW1 and SW2 to ground.  
8.3.8 Thermal Shutdown  
The LM3668 has an internal thermal shutdown function to protect the die from excessive temperatures. The  
thermal shutdown trip point is typically 150°C; normal operation resumes when the temperature drops below  
125°C.  
8.3.9 Start-Up  
The LM3668 has a soft-start circuit that smooth the output voltage and ramp current during start-up. During start-  
up the bandgap reference is slowly ramped up and switch current limit is reduced to half the typical value. Soft  
start is activated only if EN goes from logic low to logic high after VIN reaches 2.5 V. The start-up time thereby  
depends on the output capacitor and load current demanded at start-up. It is not recommended to start up the  
device at full load while in soft-start.  
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8.4 Device Functional Modes  
8.4.1 PWM Operation  
In PWM operation, the output voltage is regulated by switching at a constant frequency and then modulating the  
energy per cycle to control power to the load. In Normal operation, the internal error amplifier provides an error  
signal, Vc, from the feedback voltage and Vref. The error amplifier signal, Vc, is compared with a voltage,  
Vcenter, and used to generate the PWM signals for both buck & boost modes. Signal Vcenter is a DC signal  
which sets the transition point of the buck and boost modes. Below are three regions of operation:  
Region I: If Vc is less than Vcenter, Buck mode.  
Region II: If Vc and Vcenter are equal, both PMOS switches (P1, P2) are on and both NMOS switches (N1,  
N2) are off. The power passes directly from input to output via P1 & P2  
Region III: If Vc is greater than Vcenter, Boost mode.  
The Buck-Boost operation is avoided, to improve the efficiency across VIN and load range.  
-
+
Vcenter  
Vc  
P1b_PWM  
P2b_PWM  
PWM  
Generator  
-
+
+
VOS  
Vramp  
-
Figure 43. PWM Generator Block Diagram  
8.4.2 PFM Operation  
At very light loads, the converter enters PFM mode and operates with reduced switching frequency and supply  
current to maintain high efficiency. The part automatically transitions into PFM mode when either of two following  
conditions occur for a duration of 128 or more clock cycles:  
A. The inductor current reaches zero.  
B. The peak inductor current drops below the IMODE level, (Typically IMODE < 45 mA + VIN/80 ).  
In PFM operation, the compensation circuit in the error amplifier is turned off. The error amplifier works as a  
hysteretic comparator. The PFM comparator senses the output voltage via the feedback pin and controls the  
switching of the output FETs such that the output voltage ramps between ~0.8% and ~1.6% of the nominal PWM  
output voltage (Figure 44). If the output voltage is below the ‘high’ PFM comparator threshold, the P1 & P2 (Buck  
mode) or N2 & P1 (Boost mode) power switches are turned on. It remains on until the output voltage reaches the  
‘high’ PFM threshold or the peak current exceeds the IPFM level set for PFM mode. The typical peak current in  
PFM mode is: IPFM = 220 mA  
Once the P1 (Buck mode) or N2 (Boost mode) power switch is turned off, the N1 & P2 (Buck mode) or P1 & P2  
(Boost mode) power switches are turned on until the inductor current ramps to zero. When the zero inductor  
current condition is detected, the N1(Buck mode) or P2 (Boost mode) power switches are turned off. If the output  
voltage is below the ‘high’ PFM comparator threshold, the P1 & P2 (Buck mode) or N2 & P1 (Boost mode)  
switches are again turned on and the cycle is repeated until the output reaches the desired level. Once the  
output reaches the ‘high’ PFM threshold, the N1 & P2 (Buck mode) or P1 & P2 (Boost mode) switches are turned  
on briefly to ramp the inductor current to zero, then both output switches are turned off and the part enters an  
extremely low power mode. Quiescent supply current during this ‘sleep’ mode is 45 µA (typ), which allows the  
part to achieve high efficiency under extremely light load conditions.  
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Device Functional Modes (continued)  
High PFM Threshold  
~1.016*Vout  
PFM Mode at Light Load  
Load current  
increases  
Low1 PFM Threshold  
~1.008*Vout  
Current load  
High PFM  
Voltage  
Threshold  
reached,  
go into  
Low power  
mode, both  
switches are off  
increases,  
draws Vout  
towards  
Low2 PFM  
Threshold  
Inductor  
Low PFM  
Threshold,  
turn on  
current ramp  
down  
Inductor  
Current  
until  
I inductor=0  
Ramp up  
Low2 PFM Threshold  
Vout  
Low2 PFM Threshold,  
switch back to PWMmode  
PWM Mode at  
Moderate to Heavy  
Loads  
Figure 44. PFM to PWM Mode Transition  
In addition to the auto mode transition, the LM3668 operates in PFM Buck or PFM Boost based on the following  
conditions. There is a small delta (approximately 500 mV) known as dv1 (approximately 200 mV) and dv2  
(approximately 300 mV) when VOUT_TARGET is very close to VIN where the device can be in either Buck or Boost  
mode. For example, when VOUT_TARGET = 3.3 V and VIN is between 3.1 V and 3.6 V, the LM3668 can be in either  
mode depending on the VIN vs VOUT_TARGET  
.
Region I: If VIN < VOUT_TARGET – dv1, the regulator operates in Boost mode.  
Region II: If VOUT_TARGET – dv1 < VIN < VOUT_TARGET+ dv2 ,the regulator operates in either Buck or Boost  
mode.  
Region III: If VIN > VOUT_TARGET + dv2, the regulator operates in Buck mode.  
Region I  
Region II  
Region III  
VOUT (Target)  
Buck  
or  
Boost  
Buck  
Boost  
VIN  
dV1 - V  
OUT (TARGET)  
V
+ dV2  
OUT (TARGET)  
Figure 45. VOUT vs VIN Transition  
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Device Functional Modes (continued)  
In the buck PFM operation, P2 is always turned on and N2 is always turned off , P1 and N1 power switches are  
switching. P1 and N1 are turned off to enter " sleep mode" when the output voltage reaches the "high"  
comparator threshold. In boost PFM operation, P2 and N2 are switching. P1 is turned on and N1 is turned off  
when the output voltage is below the "high" threshold. Unlike in buck mode, all four power switches are turned off  
to enter "sleep" mode when the output voltage reaches the "high" threshold in boost mode. In addition, the  
internal current sensing of the IPFM is used to determine the precise condition to switch over to buck or boost  
mode via the PFM generator.  
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9 Application and Implementation  
NOTE  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
9.1 Application Information  
9.1.1 MODE/SYNC Pin  
If the MODE/SYNC pin is set high, the device is set to operate at PWM mode only. If MODE/SYNC pin is set low,  
the device is set to automatically transition from PFM to PWM or PWM to PFM depending on the load current.  
Do not leave this pin floating. The MODE/SYNC pin can also be driven by an external clock to set the desired  
switching frequency between 1.6 MHz to 2.7 MHz.  
9.1.2 VSEL Pin  
The LM3668 has built in logic for conveniently setting the output voltage, for example if VVSEL high, the output is  
set to 3.3 V; with VVSEL low the output is set to 2.8 V. It is not recommended to use this function for dynamically  
switching between 2.8 V and 3.3 V or switching at maximum load.  
9.2 Typical Application  
VIN = 2.5V - 5.5V  
C1  
10 PF  
VDD  
SW1  
PVIN  
VOUT  
2.8V/3.3V  
FB  
2.2 PH  
LM3668  
C2  
22 PF  
SW2  
SYNC/MODE  
L = 2.8V  
H = 3.3V  
EN  
NC  
VSEL  
SGND PGND  
Figure 46. LM3668 Typical Application Circuit  
9.2.1 Design Requirements  
9.2.1.1 Maximum Current  
The LM3668 is designed to operate up to 1 A. For input voltages at 2.5 V, the maximum operating current is 600  
mA and 800 mA for 2.7 V input voltage. In any mode it is recommended to avoid starting up the device at  
minimum input voltage and maximum load. Special attention must be taken to avoid operating near thermal  
shutdown when operating in boost mode at maximum load (1 A). A simple calculation can be used to determine  
the power dissipation at the operating condition; PD-MAX = (TJ-MAX-OP – TA-MAX)/RθJA. The LM3668 has thermal  
resistance RθJA = 47.3°C/W (see Thermal Information and maximum operating ambient of 85°C. As a result, the  
maximum power dissipation using the above formula is around 845 mW.  
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Typical Application (continued)  
9.2.2 Detailed Design Procedure  
9.2.2.1 Inductor Selection  
There are two main considerations when choosing an inductor: the inductor should not saturate, and the inductor  
current ripple should be small enough to achieve the desired output voltage ripple. Different saturation current  
rating specifications are followed by different manufacturers so attention must be given to details. Saturation  
current ratings are typically specified at 25°C. However, ratings at the maximum ambient temperature of  
application should be requested from the manufacturer. Shielded inductors radiate less noise and should be  
preferred.  
In the case of the LM3668, there are two modes (Buck & Boost) of operation that must be consider when  
selecting an inductor with appropriate saturation current. The saturation current should be greater than the sum  
of the maximum load current and the worst case average to peak inductor current. Equation 1 shows the buck  
mode operation for worst case conditions and the second equation for boost condition.  
+ IRIPPLE  
ISAT > IOUTMAX  
For Buck  
(VIN - VOUT  
)
VOUT  
VIN  
x
Where IRIPPLE  
IOUTMAX  
=
(2 x L x f)  
ISAT  
>
+ IRIPPLE  
For Boost  
'¶  
(VOUT - VIN)  
VIN  
x
Where IRIPPLE  
=
(2 x L x f)  
VOUT  
(VOUT - VIN)  
& '¶ꢀ= (1-D)  
Where D =  
(VOUT  
)
where  
IRIPPLE: Peak inductor current  
IOUTMAX: Maximum load current  
VIN: Maximum input voltage in application  
L : Min inductor value including worst case tolerances (30% drop can be considered)  
f : Minimum switching frequency  
VOUT: Output voltage  
D: Duty Cycle for CCM Operation  
VOUT : Output voltage  
VIN: Input voltage  
Example using above equations:  
VIN = 2.8 V to 4 V  
VOUT = 3.3 V  
IOUT = 500 mA  
L = 2.2 µH  
F = 2 MHz  
Buck: ISAT = 567 mA  
Boost: ISAT = 638 mA  
(1)  
As a result, the inductor should be selected according to the highest of the two ISAT values.  
A more conservative and recommended approach is to choose an inductor that has a saturation current rating  
greater than the maximum current limit of 2.05 A.  
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Typical Application (continued)  
A 2.2-µH inductor with a saturation current rating of at least 2.05 A is recommended for most applications. The  
inductor’s resistance should be less than 100 mΩ for good efficiency. For low-cost applications, an unshielded  
bobbin inductor could be considered. For noise critical applications, a toroidal or shielded-bobbin inductor should  
be used. A good practice is to lay out the board with overlapping footprints of both types for design flexibility.  
This allows substitution of a low-noise shielded inductor, in the event that noise from low-cost bobbin model is  
unacceptable.  
Table 2. Suggest Inductors and Suppliers  
MODEL  
VENDOR  
DIMENSIONS  
LxWxH (mm)  
D.C.R (m)(MAX)  
ISAT (A)  
LPS4012-222L  
LPS4018-222L  
Coilcraft  
Coilcraft  
TOKO  
4 x 4 x 1.2  
4 x 4 x 1.8  
3 x 2.8 x 1.2  
100  
70  
2.1  
2.5  
1098AS-2R0M (2 µH)  
67  
1.8 (lower current  
applications)  
9.2.2.2 Input Capacitor Selection  
A ceramic input capacitor of at least 10 µF, 6.3 V is sufficient for most applications. Place the input capacitor as  
close as possible to the PVIN pin of the device. A larger value may be used for improved input voltage filtering.  
Use X7R or X5R types; do not use Y5V . DC bias characteristics of ceramic capacitors must be considered when  
selecting case sizes like 0805 or 0603. The input filter capacitor supplies current to the PFET switch of the  
LM3668 in the first half of each cycle and reduces voltage ripple imposed on the input power source. A ceramic  
capacitor’s low ESR provides the best noise filtering of the input voltage spikes due to this rapidly changing  
current. For applications where input voltage is 4 V or higher, it is best to use a higher voltage rating capacitor to  
eliminate the DC bias affect over capacitance.  
9.2.2.3 Output Capacitor Selection  
A ceramic output capacitor of 22 µF, 6.3 V (use 10 V or higher rating for 4.5 V-5 V output option) is sufficient for  
most applications. Multilayer ceramic capacitors such as X7R or X5R with low ESR is a good choice for this as  
well. These capacitors provide an ideal balance between small size, cost, reliability and performance. Do not use  
Y5V ceramic capacitors as they have temperature limitation and poor dielectric performance over temperature  
and poor voltage characteristic for a given value. In other words, ensure the minimum COUT value does not  
exceed 40% of the above-suggested value over the entire range of operating temperature and bias conditions.  
Extra attention is required if a smaller case size capacitor is used in the application. Smaller case size capacitors  
typically have less capacitance for a given bias voltage as compared to a larger case size capacitor with the  
same bias voltage. Please contact the capacitor manufacturer for detailed information regarding capacitance  
verses case size. Table 3 lists several capacitor suppliers.  
The output filter capacitor smooths out current flow from the inductor to the load, helps maintain a steady output  
voltage during transient load changes and reduces output voltage ripple. These capacitors must be selected with  
sufficient capacitance and sufficiently low ESR to perform these functions.  
Note that the output voltage ripple is dependent on the inductor current ripple and the equivalent series  
resistance of the output capacitor (RESR).  
The RESR is frequency dependent (as well as temperature dependent); make sure the value used for calculations  
is at the switching frequency of the part.  
Table 3. Suggested Capacitors and Suppliers  
CASE SIZE  
INCH (mm)  
MODEL  
TYPE  
VENDOR  
VOLTAGE RATING (V)  
10 µF FOR CIN (FOR 4.5/5 V OPTION, USE 10 V OR HIGHER RATING CAPACITOR)  
GRM21BR60J106K  
JMK212BJ106K  
Ceramic, X5R  
Ceramic, X5R  
Ceramic, X5R  
Ceramic, X5R  
Murata  
Taiyo-Yuden  
TDK  
6.3  
6.3  
6.3  
10  
0805 (2012)  
0805 (2012)  
0805 (2012)  
0806(2012)  
C2012X5R0J106K  
LMK212 BJ106MG (±20%)  
Taiyon-Yuden  
Copyright © 2007–2015, Texas Instruments Incorporated  
Submit Documentation Feedback  
21  
Product Folder Links: LM3668  
 
LM3668  
SNVS449O JUNE 2007REVISED APRIL 2015  
www.ti.com  
Table 3. Suggested Capacitors and Suppliers (continued)  
CASE SIZE  
INCH (mm)  
MODEL  
TYPE  
VENDOR  
VOLTAGE RATING (V)  
LMK212 BJ106KG (±10%)  
Ceramic, X5R  
Taiyon-Yuden  
10  
0805(2012)  
22 µF FOR COUT (FOR 4.5/5 V OPTION, USE 10 V OR HIGHER RATING CAPACITOR)  
JMK212BJ226MG  
LMK212BJ226MG  
Ceramic, X5R  
Ceramic, X5R  
Taiyo-Yuden  
Taiyo-Yuden  
6.3  
10  
0805 (2012)  
0805 (2012)  
9.2.3 Application Curves  
Figure 47. Start-Up in PWM Mode (VOUT = 3.4 V, Load = 1  
mA)  
Figure 48. Start-up in PWM Mode (VOUT = 3.4 V, Load = 500  
mA)  
100  
90  
80  
70  
60  
V
IN  
= 2.5V  
V
= 2.7V  
IN  
V
= 3.3V  
IN  
50  
40  
30  
20  
10  
0
V
= 3.6V  
IN  
V
= 5.5V  
IN  
0
1
10  
LOAD (mA)  
100  
1000  
Figure 49. Efficiency at 3.3 V Output  
22  
Submit Documentation Feedback  
Copyright © 2007–2015, Texas Instruments Incorporated  
Product Folder Links: LM3668  
LM3668  
www.ti.com  
SNVS449O JUNE 2007REVISED APRIL 2015  
10 Power Supply Recommendations  
The power supply for the applications using the LM3668 device should be big enough considering output power  
and efficiency at given input voltage condition. Minimum current requirement condition is (VOUT × IOUT)/(VIN  
efficiency) and approximately 20 to 30% higher than this value is recommended.  
×
11 Layout  
11.1 Layout Guidelines  
As for any high frequency switcher, it is important to place the external components as close as possible to the  
IC to maximize device performance. Below are some layout recommendations:  
1. Place input filter and output filter capacitors close to the IC to minimize copper trace resistance which will  
directly effect the overall ripple voltage.  
2. Route noise sensitive trace away from noisy power components. Separate power GND (Noisy GND) and  
Signal GND (quiet GND) and star GND them at a single point on the PCB preferably close to device GND.  
3. Connect the ground pins and filter capacitors together via a ground plane to prevent switching current  
circulating through the ground plane. Additional layout consideration regarding the WSON package can be  
found in AN-1187 Leadless Leadframe Package (LLP), SNOA401.  
11.2 Layout Example  
GND  
VOUT  
C2  
SW2  
VSEL  
SGND  
GND  
L1  
MODE/SYNC  
SGND  
Bottom layer  
EN  
SW1  
VIN  
GND  
C1  
Copyright © 2007–2015, Texas Instruments Incorporated  
Submit Documentation Feedback  
23  
Product Folder Links: LM3668  
LM3668  
SNVS449O JUNE 2007REVISED APRIL 2015  
www.ti.com  
12 Device and Documentation Support  
12.1 Device Support  
12.1.1 Third-Party Products Disclaimer  
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT  
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES  
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER  
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.  
12.1.2 Documentation Support  
12.1.2.1 Related Documentation  
TI Application Note AN-1187 Leadless Leadframe Package (LLP) (SNOA401).  
12.2 Trademarks  
All trademarks are the property of their respective owners.  
12.3 Electrostatic Discharge Caution  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
12.4 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
13 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
24  
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Copyright © 2007–2015, Texas Instruments Incorporated  
Product Folder Links: LM3668  
PACKAGE OPTION ADDENDUM  
www.ti.com  
8-Oct-2015  
PACKAGING INFORMATION  
Orderable Device  
LM3668SD-2833/NOPB  
LM3668SD-3034/NOPB  
LM3668SD-4550/NOPB  
LM3668SDX-2833/NOPB  
Status Package Type Package Pins Package  
Eco Plan  
Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(6)  
(3)  
(4/5)  
ACTIVE  
WSON  
WSON  
WSON  
WSON  
DQB  
12  
12  
12  
12  
1000  
Green (RoHS  
& no Sb/Br)  
CU SN  
CU SN  
CU SN  
CU SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
S017B  
ACTIVE  
ACTIVE  
ACTIVE  
DQB  
DQB  
DQB  
1000  
1000  
4500  
Green (RoHS  
& no Sb/Br)  
-40 to 85  
-40 to 85  
S018B  
S019B  
S017B  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish  
value exceeds the maximum column width.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
8-Oct-2015  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF LM3668 :  
Automotive: LM3668-Q1  
NOTE: Qualified Version Definitions:  
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
2-Sep-2015  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LM3668SD-2833/NOPB WSON  
LM3668SD-3034/NOPB WSON  
LM3668SD-4550/NOPB WSON  
LM3668SDX-2833/NOPB WSON  
DQB  
DQB  
DQB  
DQB  
12  
12  
12  
12  
1000  
1000  
1000  
4500  
178.0  
178.0  
178.0  
330.0  
12.4  
12.4  
12.4  
12.4  
3.3  
3.3  
3.3  
3.3  
3.3  
3.3  
3.3  
3.3  
1.0  
1.0  
1.0  
1.0  
8.0  
8.0  
8.0  
8.0  
12.0  
12.0  
12.0  
12.0  
Q1  
Q1  
Q1  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
2-Sep-2015  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LM3668SD-2833/NOPB  
LM3668SD-3034/NOPB  
LM3668SD-4550/NOPB  
LM3668SDX-2833/NOPB  
WSON  
WSON  
WSON  
WSON  
DQB  
DQB  
DQB  
DQB  
12  
12  
12  
12  
1000  
1000  
1000  
4500  
210.0  
210.0  
210.0  
367.0  
185.0  
185.0  
185.0  
367.0  
35.0  
35.0  
35.0  
35.0  
Pack Materials-Page 2  
MECHANICAL DATA  
DQB0012A  
SDF12A (Rev B)  
www.ti.com  
IMPORTANT NOTICE  
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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms  
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