LM5001IDQ1 [TI]

High-Voltage Switch-Mode Regulator;
LM5001IDQ1
型号: LM5001IDQ1
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
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High-Voltage Switch-Mode Regulator

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LM5001, LM5001-Q1  
SNVS484H JANUARY 2007REVISED JULY 2015  
LM5001x High-Voltage Switch-Mode Regulator  
1 Features  
3 Description  
The LM5001 high-voltage switch-mode regulator  
1
AEC-Q100 Qualified (TJ = –40°C to 125°C)  
Integrated 75-V N-Channel MOSFET  
features all of the functions necessary to implement  
efficient high-voltage Boost, Flyback, SEPIC and  
Forward converters, using few external components.  
This easy-to-use regulator integrates a 75-V N-  
Channel MOSFET with a 1-A peak current limit.  
Current mode control provides inherently simple loop  
compensation and line-voltage feed-forward for  
superior rejection of input transients. The switching  
frequency is set with a single resistor and is  
programmable up to 1.5 MHz. The oscillator can also  
be synchronized to an external clock. Additional  
protection features include: current limit, thermal  
shutdown, undervoltage lockout and remote  
shutdown capability.  
Ultra-Wide Input Voltage Range from  
3.1 V to 75 V  
Integrated High Voltage Bias Regulator  
Adjustable Output Voltage  
1.5% Output Voltage Accuracy  
Current Mode Control with Selectable  
Compensation  
Wide Bandwidth Error Amplifier  
Integrated Current Sensing and Limiting  
Integrated Slope Compensation  
85% Maximum Duty Cycle Limit  
Single Resistor Oscillator Programming  
Oscillator Synchronization Capability  
Enable / Undervoltage Lockout (UVLO) Pin  
Thermal Shutdown  
Device Information(1)  
DEVICE NAME  
LM5001  
LM5001Q1  
PACKAGE  
BODY SIZE  
4.9 mm x 3.91 mm  
4 mm x 4 mm  
SOIC (8)  
WSON (8)  
SOIC (8)  
4.9 mm x 3.91 mm  
(1) For all available packages, see the orderable addendum at  
the end of the datasheet.  
2 Applications  
DC-DC Power Supplies for Industrial,  
Communications, and Automotive Applications  
Boost, Flyback, SEPIC and Forward Converter  
Topologies  
+12V to +36V  
+48V  
VIN  
EN  
SW  
COMP  
LM5001  
FB  
VCC  
RT  
GND  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
 
 
LM5001, LM5001-Q1  
SNVS484H JANUARY 2007REVISED JULY 2015  
www.ti.com  
Table of Contents  
7.2 Functional Block Diagram ........................................ 8  
7.3 Feature Description .................................................. 9  
Applications and Implementation ...................... 11  
8.1 Application Information............................................ 11  
8.2 Typical Applications ................................................ 14  
Layout ................................................................... 18  
9.1 Layout Guidelines ................................................... 18  
1
2
3
4
5
6
Features.................................................................. 1  
Applications ........................................................... 1  
Description ............................................................. 1  
Revision History..................................................... 2  
Pin Configuration and Functions......................... 3  
Specifications......................................................... 4  
6.1 Absolute Maximum Ratings ...................................... 4  
6.2 ESD Ratings.............................................................. 4  
6.3 Recommended Operating Conditions....................... 4  
6.4 Thermal Information.................................................. 4  
6.5 Electrical Characteristics........................................... 4  
6.6 Typical Characteristics ............................................. 6  
Detailed Description .............................................. 8  
7.1 Overview .................................................................. 8  
8
9
10 Device and Documentation Support ................. 19  
10.1 Related Links ........................................................ 19  
10.2 Trademarks........................................................... 19  
10.3 Electrostatic Discharge Caution............................ 19  
10.4 Glossary................................................................ 19  
11 Mechanical, Packaging, and Orderable  
7
Information ........................................................... 19  
4 Revision History  
Changes from Revision G (April 2014) to Revision H  
Page  
Changed to match the new ESD table ................................................................................................................................... 4  
Changes from Revision F (March 2013) to Revision G  
Page  
Added LM5001-Q1 option to Electrical Characteristics table................................................................................................. 5  
Changes from Revision E (March 2013) to Revision F  
Page  
Added availability of LM5001-Q1 option ................................................................................................................................ 1  
Changed to new TI standard: Added Handling Ratings table and the Device and Documentation Support section. ........... 1  
2
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SNVS484H JANUARY 2007REVISED JULY 2015  
5 Pin Configuration and Functions  
SOIC (D) 8 Pins  
Top View  
1
2
8
7
SW  
VIN  
EN  
COMP  
FB  
VCC  
3
4
6
5
GND  
RT  
WSON (NGT) 8 Pins  
Top View  
1
8
7
6
5
FB  
RT  
COMP  
EN  
2
3
4
EP  
GND  
VCC  
SW  
VIN  
Pin Functions  
PIN  
WSON  
NAME  
TYPE  
DESCRIPTION  
SOIC  
1
2
3
4
SW  
VIN  
Switch pin  
The drain terminal of the internal power MOSFET.  
Nominal operating range: 3.1 V to 75 V.  
Input supply pin  
VCC tracks VIN up to 6.9 V. Above VIN = 6.9 V, VCC is  
regulated to 6.9 V. A 0.47-µF or greater ceramic decoupling  
capacitor is required. An external voltage (7 V – 12 V) can  
be applied to this pin which disables the internal VCC  
regulator to reduce internal power dissipation and improve  
converter efficiency.  
Bias regulator output, or input for external  
bias supply  
3
4
5
5
6
7
VCC  
GND  
RT  
Internal reference for the regulator control functions and the  
power MOSFET current sense resistor connection.  
Ground  
The internal oscillator is set with a resistor, between this pin  
and the GND pin. The recommended frequency range is 50  
KHz to 1.5 MHz. The RT pin can accept synchronization  
pulses from an external clock. A 100-pF capacitor is  
recommended for coupling the synchronizing clock to the  
RT pin.  
Oscillator frequency programming and  
optional synchronization pulse input  
This pin is connected to the inverting input of the internal  
error amplifier. The 1.26-V reference is internally connected  
to the non-inverting input of the error amplifier.  
Feedback input from the regulated output  
voltage  
6
7
8
1
FB  
The loop compensation network should be connected  
between the COMP pin and the FB pin. COMP pull-up is  
provided by an internal 5-kresistor which may be used to  
bias an opto-coupler transistor (while FB is grounded) for  
isolated ground applications.  
Open drain output of the internal error  
amplifier  
COMP  
An external voltage divider can be used to set the line  
undervoltage lockout threshold. If the EN pin is left  
unconnected, a 6-µA pull-up current source pulls the EN pin  
high to enable the regulator.  
Enable / Undervoltage Lock-Out /  
Shutdown input  
8
2
EN  
EP  
Exposed metal pad on the underside of the package with a  
resistive connection to pin 6. It is recommended to connect  
this pad to the PC board ground plane in order to improve  
heat dissipation.  
NA  
EP  
Exposed Pad, WSON only  
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SNVS484H JANUARY 2007REVISED JULY 2015  
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6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)  
MIN  
–0.3  
–0.3  
-65  
MAX  
76  
UNIT  
V
VIN to GND  
SW to GND (Steady State)  
VCC, EN to GND  
76  
V
14  
V
COMP, FB, RT to GND  
Maximum Junction Temperature  
Storage Temperature Range, Tstg  
7
V
150  
150  
°C  
°C  
6.2 ESD Ratings  
VALUE  
UNIT  
Human-body model (HBM), per AEC Q100-002(1)  
Charged-device model (CDM), per AEC Q100-011  
±2000  
±750  
V(ESD)  
Electrostatic discharge  
V
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.  
6.3 Recommended Operating Conditions  
MIN  
3.1  
NOM  
MAX  
75  
UNIT  
V
VIN  
Operating Junction Temperature  
40  
125  
°C  
6.4 Thermal Information  
LM5001-Q1  
SOIC  
LM5001  
SOIC WSON  
THERMAL METRIC  
UNIT  
(8 PINS)  
140  
RθJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
140  
32  
40  
°C/W  
RθJCtop  
32  
4.5  
6.5 Electrical Characteristics  
Minimum and Maximum limits are ensured through test, design, or statistical correlation, over the junction temperature (TJ)  
range of –40°C to +125°C. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for  
reference purposes only. VVIN = 10 V, RRT = 48.7 kunless otherwise stated(1)  
.
SYMBOL  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP MAX UNIT  
Startup Regulator  
VVCC-REG  
VCC Regulator Output  
6.55  
15  
6.85  
20  
7.15  
3
V
VCC Current Limit  
VVCC = 6 V  
mA  
VCC UVLO Threshold  
VVCC increasing  
2.6  
2.8  
0.1  
3.1  
95  
V
VCC Undervoltage Hysteresis  
Bias Current (IIN  
Shutdown Current (IIN  
)
VFB = 1.5 V  
VEN = 0V  
4.5  
mA  
µA  
IQ  
)
130  
(1) Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation  
using Statistical Quality Control (SQC) methods. Limits are used to calculate TI’s Average Outgoing Quality Level (AOQL).  
4
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Electrical Characteristics (continued)  
Minimum and Maximum limits are ensured through test, design, or statistical correlation, over the junction temperature (TJ)  
range of –40°C to +125°C. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for  
reference purposes only. VVIN = 10 V, RRT = 48.7 kunless otherwise stated(1)  
.
SYMBOL  
PARAMETER  
TEST CONDITIONS  
MIN  
0.25  
1.2  
TYP MAX UNIT  
EN Thresholds  
EN Shutdown Threshold  
VEN increasing  
0.45  
0.1  
1.26  
0.1  
6
0.65  
1.32  
EN Shutdown Hysteresis  
EN Standby Threshold  
EN Standby Hysteresis  
EN Current Source  
V
VEN increasing  
µA  
mΩ  
MOSFET Characteristics  
MOSFET RDS(ON) plus  
LM5001  
490  
490  
0.05  
4.5  
800  
880  
5
ID = 0.5 A  
Current Sense Resistance  
LM5001-Q1  
MOSFET Leakage Current  
MOSFET Gate Charge  
VSW = 75 V  
µA  
nC  
VVCC = 6.9 V  
Current Limit  
ILIM  
Cycle by Cycle Current Limit  
0.8  
1.0  
1.2  
A
Cycle by Cycle Current Limit Delay  
100  
200  
ns  
Oscillator  
FSW1  
Frequency1  
RRT = 48.7 kΩ  
RRT = 15.8 kΩ  
225  
660  
2.2  
260  
780  
2.6  
15  
295  
900  
3.2  
KHz  
FSW2  
Frequency2  
VRT-SYNC  
SYNC Threshold  
SYNC Pulse Width Minimum  
V
VRT > VRT-SYNC + 0.5 V  
ns  
PWM Comparator  
Maximum Duty Cycle  
80%  
85%  
35  
90%  
1.55  
Min On-time  
VCOMP > VCOMP-OS  
VCOMP < VCOMP-OS  
ns  
V
Min On-time  
0
VCOMP-OS  
COMP to PWM Comparator Offset  
0.9  
1.30  
Error Amplifier  
VFB-REF  
Internal reference  
VFB = VCOMP  
Feedback Reference Voltage  
1.241  
1.260 1.279  
V
FB Bias Current  
10  
72  
nA  
dB  
DC Gain  
COMP Sink Current  
COMP Short Circuit Current  
COMP Open Circuit Voltage  
COMP to SW Delay  
Unity Gain Bandwidth  
VCOMP = 250 mV  
VFB = 0, VCOMP = 0  
VFB = 0  
2.5  
0.9  
4.8  
mA  
1.2  
5.5  
50  
3
1.5  
6.2  
V
ns  
MHz  
Thermal Shutdown  
TSD Thermal Shutdown Threshold  
Thermal Shutdown Hysteresis  
165  
20  
°C  
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SNVS484H JANUARY 2007REVISED JULY 2015  
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6.6 Typical Characteristics  
Figure 1. Efficiency, Boost Converter  
Figure 2. VFB vs Temperature  
Figure 3. IQ (Non-Switching) vs VIN  
Figure 4. VCC vs VIN  
Figure 5. RDS(ON) vs VCC  
Figure 6. RDS(ON) vs Temperature  
6
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Typical Characteristics (continued)  
Figure 7. ILIM vs VCC  
Figure 8. ILIM vs VCC vs Temperature  
Figure 9. FSW vs RRT  
Figure 10. FSW vs Temperature  
Figure 11. FSW vs VCC  
Figure 12. IEN vs VVIN vs Temperature  
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7 Detailed Description  
7.1 Overview  
The LM5001 high voltage switching regulator features all the functions necessary to implement an efficient boost,  
flyback, SEPIC or forward current mode power converter. The operation can be best understood by referring to  
the block diagram. At the start of each cycle, the oscillator sets the driver logic and turns on the power MOSFET  
to conduct current through the inductor or transformer. The peak current in the MOSFET is controlled by the  
voltage at the COMP pin. The COMP voltage increases with larger loads and decrease with smaller loads. This  
voltage is compared with the sum of a voltage proportional to the power MOSFET current and an internally  
generated Slope Compensation ramp. Slope Compensation is used in current mode PWM architectures to  
eliminate sub-harmonic current oscillation that occurs with static duty cycles greater than 50%. When the  
summed signal exceeds the COMP voltage, the PWM comparator resets the driver logic, turning off the power  
MOSFET. The driver logic is then set by the oscillator at the end of the switching cycle to initiate the next power  
period.  
The LM5001 has dedicated protection circuitry to protect the IC from abnormal operating conditions. Cycle-by-  
cycle current limiting prevents the power MOSFET current from exceeding 1 A. This feature can also be used to  
soft-start the regulator. Thermal Shutdown circuitry holds the driver logic in reset when the die temperature  
reaches 165°C, and returns to normal operation when the die temperature drops by approximately 20°C. The EN  
pin can be used as an input voltage undervoltage lockout (UVLO) during start-up to prevent operation with less  
than the minimum desired input voltage.  
7.2 Functional Block Diagram  
HV-LDO  
VIN  
EN  
VCC  
+6.9V  
+
+5V  
-
REFERENCE  
GENERATOR  
Disable  
0.45V  
1.26V  
6 PA  
SHUTDOWN  
STANDBY  
1.26V  
+
-
Disable  
-
+
2.8V  
VCC  
UVLO  
ENABLE  
+
-
THERMAL  
STANDBY  
(165oC)  
SW  
ENABLE  
CLK  
OSCILLATOR  
WITH  
SYNC  
CAPABILITY  
RT  
MAX DUTY  
RAMP  
ENABLE  
VCC  
SLOPE COMP RAMP  
450 mV  
DRIVER  
0
RAMP  
+
0.7  
CS  
1.26V  
×
+5V  
CLK  
Q
S
R
5k  
PWM  
+
-
FB  
1.3V  
1.5V  
CS  
Av = 30  
CURRENT  
LIMIT  
CURRENT  
SENSE  
50 m:  
-
CS  
+
-
COMP  
+
ENABLE  
GND  
CLK  
(Leading Edge Blanking)  
8
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7.3 Feature Description  
7.3.1 High-Voltage VCC Regulator  
The LM5001 VCC Low Drop Out (LDO) regulator allows the LM5001 to operate at the lowest possible input  
voltage. The VCC pin voltage is very nearly equal to the input voltage from 2.8 V up to approximately 6.9 V. As  
the input voltage continues to increase, the VCC pin voltage is regulated at the 6.9 V set-point. The total input  
operating range of the VCC LDO regulator is 3.1 V to 75 V.  
The output of the VCC regulator is current limited to 20 mA. During power up, the VCC regulator supplies current  
into the required decoupling capacitor (0.47 µF or greater ceramic capacitor) at the VCC pin. When the voltage at  
the VCC pin exceeds the VCC UVLO threshold of 2.8 V and the EN pin is greater than 1.26 V the PWM  
controller is enabled and switching begins. The controller remains enabled until VCC falls below 2.7 V or the EN  
pin falls below 1.16 V.  
An auxiliary supply voltage can be applied to the VCC pin to reduce the IC power dissipation. If the auxiliary  
voltage is greater than 6.9 V, the internal regulator essentially shuts off, and internal power dissipation decreases  
by the VIN voltage times the operating current. The overall converter efficiency improves if the VIN voltage is  
much higher than the auxiliary voltage. The externally applied VCC voltage should not exceed 14 V. The VCC  
regulator series pass MOSFET includes a body diode (Functional Block Diagram ) between VCC and VIN that  
should not be forward biased in normal operation. Therefore, the auxiliary VCC voltage should never exceed the  
VIN voltage.  
In high voltage applications extra care should be taken to ensure the VIN pin does not exceed the absolute  
maximum voltage rating of 76 V. Voltage ringing on the VIN line during line transients that exceeds the Absolute  
Maximum Ratings damages the IC. Both careful PC board layout and the use of quality bypass capacitors  
located close to the VIN and GND pins are essential.  
7.3.2 Oscillator  
A single external resistor connected between RT and GND pins sets the LM5001 oscillator frequency. To set a  
desired oscillator frequency (FSW), the necessary value for the RT resistor can be calculated from:  
1
RT = 13.1 x 109 x  
- 83 ns  
FSW  
(1)  
The tolerance of the external resistor and the frequency tolerance indicated in the Electrical Characteristics must  
be taken into account when determining the worst case frequency range.  
7.3.3 External Synchronization  
The LM5001 can be synchronized to the rising edge of an external clock. The external clock must have a higher  
frequency than the free running oscillator frequency set by the RT resistor. The clock signal should be coupled  
through a 100 pF capacitor into the RT pin. A peak voltage level greater than 2.6 V at the RT pin is required for  
detection of the sync pulse. The DC voltage across the RT resistor is internally regulated at 1.5 V. The negative  
portion of the AC voltage of the synchronizing clock is clamped to this 1.5 V by an amplifier inside the LM5001  
with ~100 output impedance. Therefore, the AC pulse superimposed on the RT resistor must have positive  
pulse amplitude of 1.1 V or greater to successfully synchronize the oscillator. The sync pulse width measured at  
the RT pin should have a duration greater than 15 ns and less than 5% of the switching period. The sync pulse  
rising edge initiates the internal CLK signal rising edge, which turns off the power MOSFET. The RT resistor is  
always required, whether the oscillator is free running or externally synchronized. The RT resistor should be  
located very close to the device and connected directly to the RT and GND pins of the LM5001.  
7.3.4 Enable / Standby  
The LM5001 contains a dual level Enable circuit. When the EN pin voltage is below 450 mV, the IC is in a low  
current shutdown mode with the VCC LDO disabled. When the EN pin voltage is raised above the shutdown  
threshold but below the 1.26 V standby threshold, the VCC LDO regulator is enabled, while the remainder of the  
IC is disabled. When the EN pin voltage is raised above the 1.26 V standby threshold, all functions are enabled  
and normal operation begins. An internal 6 µA current source pulls up the EN pin to activate the IC when the EN  
pin is left disconnected.  
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Feature Description (continued)  
An external set-point resistor divider from VIN to GND can be used to determine the minimum operating input  
range of the regulator. The divider must be designed such that the EN pin exceeds the 1.26 V standby threshold  
when VIN is in the desired operating range. The internal 6 µA current source should be included when  
determining the resistor values. The shutdown and standby thresholds have 100 mV hysteresis to prevent noise  
from toggling between modes. When the VIN voltage is below 3.5 VDC during start-up and the operating  
temperature is below –20°C, the EN pin should have a pull-up resistor provides 2 µA or greater current. The EN  
pin is internally protected by a 6 V Zener diode through a 1 kresistor. The enabling voltage may exceed the  
Zener voltage, however the Zener current should be limited to less than 4 mA.  
7.3.5 Error Amplifier and PWM Comparator  
An internal high gain error amplifier generates an error signal proportional to the difference between the  
regulated output voltage and an internal precision reference. The output of the error amplifier is connected to the  
COMP pin allowing the user to add loop compensation, typically a Type II network, as illustrated in Figure 13.  
This network creates a low frequency pole that rolls off the high DC gain of the amplifier, which is necessary to  
accurately regulate the output voltage. FDC_POLE is the closed loop unity gain (0 dB) frequency of this pole. A zero  
provides phase boost near the closed loop unity gain frequency, and a high frequency pole attenuates switching  
noise. The PWM comparator compares the current sense signal from the current sense amplifier to the error  
amplifier output voltage at the COMP pin.  
1
FDC_POLE  
=
2S x R1 x(C1 + C2)  
1
FZERO  
=
=
2S x R2 xC2  
1
FPOLE  
5V  
VOUT  
C
xC2  
§
·
1
1.26V  
2S x R2  
x
¨
¨
¸
¸
C1 + C2  
PWM  
5k  
©
¹
R
1
FB  
1.3V  
C
1
COMP  
R
2
C
2
R
FEEDBACK  
LM5001  
Figure 13. Type II Compensator  
When isolation between primary and secondary circuits is required, the Error Amplifier is usually disabled by  
connecting the FB pin to GND. This allows the COMP pin to be driven directly by the collector of an opto-coupler.  
In isolated designs the external error amplifier is located on the secondary circuit and drives the opto-coupler  
LED. The compensation network is connected to the secondary side error amplifier. An example of an isolated  
regulator with an opto-coupler is shown in Figure 19.  
7.3.6 Current Amplifier and Slope Compensation  
The LM5001 employs peak current mode control which also provides a cycle-by-cycle over current protection  
feature. An internal 50 mcurrent sense resistor measures the current in the power MOSFET source. The sense  
resistor voltage is amplified 30 times to provide a 1.5 V/A signal into the current limit comparator. Current limiting  
is initiated if the internal current limit comparator input exceeds the 1.5 V threshold, corresponding to 1 A. When  
the current limit comparator is triggered, the SW output pin immediately switches to a high impedance state.  
10  
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Feature Description (continued)  
The current sense signal is reduced to a scale factor of 1.05 V/A for the PWM comparator signal. The signal is  
then summed with a 450 mV peak slope compensation ramp. The combined signal provides the PWM  
comparator with a control signal that reaches 1.5 V when the MOSFET current is 1 A. For duty cycles greater  
than 50%, current mode control circuits are subject to sub-harmonic oscillation (alternating between short and  
long PWM pulses every other cycle). Adding a fixed slope voltage ramp signal (slope compensation) to the  
current sense signal prevents this oscillation. The 450 mV ramp (zero volts when the power MOSFET turns on,  
and 450 mV at the end of the PWM clock cycle) adds a fixed slope to the current sense ramp to prevent  
oscillation.  
To prevent erratic operation at low duty cycle, a leading edge blanking circuit attenuates the current sense signal  
when the power MOSFET is turned on. When the MOSFET is initially turned on, current spikes from the power  
MOSFET drain-source and gate-source capacitances flow through the current sense resistor. These transient  
currents normally cease within 50 ns with proper selection of rectifier diodes and proper PC board layout.  
7.3.7 Thermal Protection  
Internal Thermal Shutdown circuitry is provided to protect the IC in the event the maximum junction temperature  
is exceeded. When the 165°C junction temperature threshold is reached, the regulator is forced into a low power  
standby state, disabling all functions except the VCC regulator. Thermal hysteresis allows the IC to cool down  
before it is re-enabled. Note that since the VCC regulator remains functional during this period, the soft-start  
circuit shown in Figure 17 should be augmented if soft-start from Thermal Shutdown state is required.  
7.3.8 Power MOSFET  
The LM5001 switching regulator includes an N-Channel MOSFET with 440-mon-resistance. The on-resistance  
of the LM5001 MOSFET varies with temperature as shown in the Typical Characteristics graph. The typical total  
gate charge for the MOSFET is 4.5 nC which is supplied from the VCC pin when the MOSFET is turned on.  
8 Applications and Implementation  
NOTE  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
8.1 Application Information  
This information is intended to provide guidelines for the power supply designer using the LM5001.  
8.1.1 VIN  
The voltage applied to the VIN pin can vary within the range of 3.1 V to 75 V. The current into the VIN pin  
depends primarily on the gate charge of the power MOSFET, the switching frequency, and any external load on  
the VCC pin. It is recommended the filter shown in Figure 14 be used to suppress transients which may occur at  
the input supply. This is particularly important when VIN is operated close to the maximum operating rating of the  
LM5001.  
When power is applied and the VIN voltage exceeds 2.8 V with the EN pin voltage greater than 0.45 V, the VCC  
regulator is enabled, supplying current into the external capacitor connected to the VCC pin. When the VIN  
voltage is between 2.8 V and 6.9 V, the VCC voltage is approximately equal to the VIN voltage. When the  
voltage on the VCC pin exceeds 6.9 V, the VCC pin voltage is regulated at 6.9 V. In typical flyback applications,  
an auxiliary transformer winding is connected through a diode to the VCC pin. This winding must raise the VCC  
voltage above 6.9 V to shut off the internal start-up regulator. The current requirements from this winding are  
relatively small, typically less than 20 mA. If the VIN voltage is much higher than the auxiliary voltage, the  
auxiliary winding significantly improves conversion efficiency. It also reduces the power dissipation within the  
LM5001. The externally applied VCC voltage should never exceed 14 V. Also the applied VCC should never  
exceed the VIN voltage to avoid reverse current through the internal VCC to VIN diode shown in the LM5001  
block diagram.  
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Application Information (continued)  
V
PWR  
10  
VIN  
LM5001  
0.1 PF  
Figure 14. Input Transient Protection  
8.1.2 SW Pin  
Attention must be given to the PC board layout for the SW pin which connects to the power MOSFET drain.  
Energy can be stored in parasitic inductance and capacitance which cause switching spikes that negatively effect  
efficiency, and conducted and radiated emissions. These connections should be as short as possible to reduce  
inductance and as wide as possible to reduce resistance. The loop area, defined by the SW and GND pin  
connections, the transformer or inductor terminals, and their respective return paths, should be minimized.  
8.1.3 EN / UVLO Voltage Divider Selection  
Two dedicated comparators connected to the EN pin are used to detect under-voltage and shutdown conditions.  
When the EN pin voltage is below 0.45 V, the controller is in a low current shutdown mode where the VIN current  
is reduced to 95 µA. For an EN pin voltage greater than 0.45 V but less than 1.26 V the controller is in standby  
mode, with all internal circuits operational, but the PWM gate driver signal is blocked. Once the EN pin voltage is  
greater than 1.26 V, the controller is fully enabled. Two external resistors can be used to program the minimum  
operational voltage for the power converter as shown in Figure 15. When the EN pin voltage falls below the 1.26  
V threshold, an internal 100 mV threshold hysteresis prevents noise from toggling the state, so the voltage must  
be reduced to 1.16 V to transition to standby. Resistance values for R1 and R2 can be determined from  
Equation 2 and Equation 3:  
VPWR - 1.26V  
R1 =  
IDIVIDER  
(2)  
1.26V  
R2 =  
IDIVIDER + 6 PA  
(3)  
where VPWR is the desired turn-on voltage and IDIVIDER is an arbitrary current through R1 and R2.  
For example, if the LM5001 is to be enabled when VPWR reaches 16 V, IDIVIDER could be chosen as 501 µA which  
would set R1 to 29.4 kand R2 to 2.49 k. The voltage at the EN pin should not exceed 10 V unless the current  
into the 6 V protection Zener diode is limited below 4 mA. The EN pin voltage should not exceed 14 V at any  
time. Be sure to check both the power and voltage rating (some 0603 resistors are rated as low as 50 V) for the  
selected R1 resistor.  
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Application Information (continued)  
LM5001  
V
PWR  
VIN  
6 PA  
R1  
1.26V  
Disable PWM Controller  
EN  
0.45V  
R2  
Disable VCC Regulator  
Figure 15. Basic EN (UVLO) Configuration  
Remote configuration of the controller’s operational modes can be accomplished with open drain device(s)  
connected to the EN pin as shown in Figure 16. A MOSFET or an NPN transistor connected to the EN pin can  
force the regulator into the low power ‘off’ state. Adding a PN diode in the drain (or collector) provides the offset  
to achieve the standby state. The advantage of standby is that the VCC LDO is not disabled and external  
circuitry powered by VCC remains functional.  
LM5001  
V
PWR  
R1  
1.26V  
0.45V  
STANDBY  
EN  
R2  
OFF  
OFF  
STANDBY  
Figure 16. Remote Standby and Disable Control  
8.1.4 Soft-Start  
Soft-start (SS) can be implemented with an external capacitor connected to COMP through a diode as shown in  
Figure 17. The COMP discharge MOSFET conducts during Shutdown and Standby modes to keep the COMP  
voltage below the PWM offset (1.3 V), which inhibits PWM pulses. The error amplifier attempts to raise the  
COMP voltage after the EN pin exceeds the 1.26-V standby threshold. Because the error amplifier output can  
only sink current, the internal COMP pull-up resistor (~5 k) supplies the charging current to the SS capacitor.  
The SS capacitor causes the COMP voltage to gradually increase, until the output voltage achieves regulation  
and FB assumes control of the COMP and the PWM duty cycle. The SS capacitor continues charging through a  
large resistance, RSS, preventing the SS circuit from interfering with the normal error amplifier function. During  
shutdown, the VCC diode discharges the SS capacitor.  
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Application Information (continued)  
VCC  
FB  
5V  
VOUT  
1.26V  
PWM  
5k  
1.3V  
COMP  
SHUTDOWN  
& STANDBY  
R
SS  
SOFT-START  
CAPACITOR  
LM5001  
Figure 17. Soft-Start  
8.2 Typical Applications  
Figure 18, Figure 19, Figure 20, Figure 21, and Figure 22 present examples of a Non-Isolated Flyback, Isolated  
Flyback, Boost, 24-V SEPIC and a 12-V Automotive range SEPIC converters utilizing the LM5001 switching  
regulator.  
8.2.1 Non-Isolated Flyback  
The Non-Isolated Flyback converter (Figure 18) utilizes the internal voltage reference for the regulation setpoint.  
The output is 5 V at 1 A while the input voltage can vary from 16 V to 42 V. The switching frequency is set to 250  
kHz. An auxiliary winding on transformer (T1) provides 7.5 V to power the LM5001 when the output is in  
regulation. This disables the internal high voltage VCC LDO regulator and improves efficiency. The input under-  
voltage threshold is 13.9 V. The converter can be shut down by driving the EN input below 1.26 V with an open-  
collector or open-drain transistor. An external synchronizing frequency can be applied to the SYNC input. An  
optional soft-start circuit is connected to the COMP pin input. When power is applied, the soft-start capacitor (C7)  
is discharged and limits the voltage applied to the PWM comparator by the internal error amplifier. The internal  
~5 kCOMP pull-up resistor charges the soft-start capacitor until regulation is achieved. The VCC pull-up  
resistor (R7) continues to charge C7 so that the soft-start circuit will not affect the compensation network in  
normal operation. If the output capacitance is small, the soft-start circuit can be adjusted to limit the power-on  
output voltage overshoot. If the output capacitance is sufficiently large, no soft-start circuit is needed because the  
LM5001 gradually charges the output capacitor by current limiting at approximately 1 A (ILIM) until regulation is  
achieved.  
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Typical Applications (continued)  
T1  
L
PRI  
= 160 PH  
8:3:2  
D1  
VCC  
V
= 16V ± 42V  
IN  
D2  
V
= 5V  
= 1A  
OUT  
C1  
4.7 PF  
I
OUT  
C4  
100 PF  
C5  
220 pF  
R1  
60.4k  
R5  
10.2k  
C6  
R4  
VIN  
EN  
RT  
GND  
SW  
COMP  
FB  
4700 pF 13.0k  
EN  
VCC  
VCC  
R2  
6.04k  
C2  
100 pF  
R6  
3.40k  
R3  
52.3k  
C3  
1 PF  
R7  
100k  
C7  
10 PF  
SYNC  
Figure 18. Non-Isolated Flyback  
8.2.2 Isolated Flyback  
The Isolated Flyback converter (Figure 19) utilizes a 2.5 V voltage reference (LM431) located on the isolated  
secondary side for the regulation setpoint. The LM5001 internal error amplifier is disabled by grounding the FB  
pin. The LM431 controls the current through the opto-coupler LED, which sets the COMP pin voltage. The R4  
and C3 network boosts the phase response of the opto-coupler to increase the loop bandwidth. The output is 5 V  
at 1 A and the input voltage ranges from 16 V to 42 V. The switching frequency is set to 250 kHz.  
T1  
L
= 160 éH  
8:3:2  
PRI  
D1  
VCC  
V
= 16V ± 42V  
IN  
D2  
V
I
= 5V  
= 1A  
OUT  
C1  
4.7 éF  
R6  
47  
OUT  
C6  
100éF  
R5  
560  
R7  
10k  
C4  
1 éF  
R9  
2.20k  
R1  
C5  
R8  
60.4k  
0.1 PF 4.99k  
VIN  
SW  
EN  
RT  
COMP  
FB  
R4  
249  
VCC  
GND  
VCC  
LM431  
R2  
6.04k  
R10  
2.20k  
R3  
52.3k  
C2  
C3  
1 éF  
1 éF  
Figure 19. Isolated Flyback  
8.2.3 Boost  
The Boost converter (Figure 20) utilizes the internal voltage reference for the regulation setpoint. The output is 48  
V at 150 mA, while the input voltage can vary from 16 V to 36 V. The switching frequency is set to 250 kHz. The  
internal VCC regulator provides 6.9 V bias power, since there isn’t a simple method for creating an auxiliary  
voltage with the boost topology. Note that the boost topology does not provide output short-circuit protection  
because the power MOSFET cannot interrupt the path between the input and the output.  
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Typical Applications (continued)  
L1  
100 PH  
D2  
V
= 16V ± 36V  
V
OUT  
= 48V  
IN  
I
= 150mA  
C1  
OUT  
4.7 éF  
C3  
10éF  
R1  
60.4k  
R5  
54.9k  
C4  
2200 pF  
R4  
73.2k  
VIN  
EN  
RT  
SW  
COMP  
FB  
GND  
VCC  
R3  
52.3k  
R6  
1.47k  
R2  
6.04k  
C2  
1 éF  
Figure 20. Boost  
8.2.4 24-V SEPIC  
The 24-V SEPIC converter (Figure 21) utilizes the internal voltage reference for the regulation setpoint. The  
output is 24 V at 250 mA while the input voltage can vary from 16 V to 48 V. The switching frequency is set to  
250 kHz. The internal VCC regulator provides 6.9 V bias power for the LM5001. An auxiliary voltage can be  
created by adding a winding on L2 and a diode into the VCC pin.  
L1  
470 PH  
C3  
10 PF  
D2  
V
= 16V ± 48V  
V
OUT  
= 24V  
IN  
C1  
4.7 éF  
I
= 250 mA  
OUT  
L2  
470 PH  
C6  
22éF  
C4  
150 pF  
C5  
R1  
60.4k  
R5  
11.5k  
R4  
VIN  
EN  
RT  
SW  
COMP  
FB  
0.015 PF 11.5k  
GND  
VCC  
R6  
634  
R2  
6.04k  
R3  
52.3k  
C2  
1 PF  
Figure 21. 24-V SEPIC  
8.2.5 12-V Automotive SEPIC  
The 12-V Automotive SEPIC converter (Figure 22) utilizes the internal bandgap voltage reference for the  
regulation setpoint. The output is 12 V at 50 mA while the input voltage can vary from 3.1 V to 60 V. The output  
current rating can be increased if the minimum VIN voltage requirement is increased. The switching frequency is  
set to 750 kHz. The internal VCC regulator provides 6.9 V bias power for the LM5001. The output voltage can be  
used as an auxiliary voltage if the nominal VIN voltage is greater than 12 V by adding a diode from the output  
into the VCC pin. In this configuration, the minimum input voltage must be greater than 12 V to prevent the  
internal VCC to VIN diode from conducting. If the applied VCC voltage exceeds the minimum VIN voltage, then  
an external blocking diode is required between the VIN pin and the power source to block current flow from VCC  
to the input supply.  
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Typical Applications (continued)  
L1  
C3  
D2  
C4  
100 PH  
V
= 3.1V ± 60V  
V
= 12V  
4.7 PF  
IN  
OUT  
C1  
I
= 50 mA  
OUT  
R3  
2.2 éF  
L2  
100 PH  
C6  
22 éF  
150 pF  
C5  
R2  
11.5k  
VIN  
EN  
RT  
SW  
COMP  
FB  
0.015 PF 11.5k  
NC  
GND  
VCC  
R4  
1.33k  
R1  
15.8k  
C2  
1 PF  
Figure 22. 12-V SEPIC  
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9 Layout  
9.1 Layout Guidelines  
The LM5001 Current Sense and PWM comparators are very fast and may respond to short duration noise  
pulses. The components at the SW, COMP, EN and the RT pins should be as physically close as possible to the  
IC, thereby minimizing noise pickup on the PC board tracks.  
The SW output pin of the LM5001 should have a short, wide conductor to the power path inductors, transformers  
and capacitors in order to minimize parasitic inductance that reduces efficiency and increases conducted and  
radiated noise. Ceramic decoupling capacitors are recommended between the VIN pin to the GND pin and  
between the VCC pin to the GND pin. Use short, direct connections to avoid clock jitter due to ground voltage  
differentials. Small package surface mount X7R or X5R capacitors are preferred for high frequency performance  
and limited variation over temperature and applied voltage.  
If an application using the LM5001 produces high junction temperatures during normal operation, multiple vias  
from the GND pin to a PC board ground plane helps conduct heat away from the IC. Judicious positioning of the  
PC board within the end product, along with use of any available air flow helps reduce the junction temperatures.  
If using forced air cooling, avoid placing the LM5001 in the airflow shadow of large components, such as input  
capacitors, inductors or transformers.  
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10 Device and Documentation Support  
10.1 Related Links  
The table below lists quick access links. Categories include technical documents, support and community  
resources, tools and software, and quick access to sample or buy.  
Table 1. Related Links  
TECHNICAL  
DOCUMENTS  
TOOLS &  
SOFTWARE  
SUPPORT &  
COMMUNITY  
PARTS  
PRODUCT FOLDER  
SAMPLE & BUY  
LM5001  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
LM5001-Q1  
10.2 Trademarks  
All trademarks are the property of their respective owners.  
10.3 Electrostatic Discharge Caution  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
10.4 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
11 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical packaging and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
30-Jul-2015  
PACKAGING INFORMATION  
Orderable Device  
LM5001IDQ1  
Status Package Type Package Pins Package  
Eco Plan  
Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(6)  
(3)  
(4/5)  
ACTIVE  
SOIC  
SOIC  
D
8
8
8
8
8
8
8
8
95  
Green (RoHS  
& no Sb/Br)  
CU SN  
CU SN  
Call TI  
CU SN  
CU SN  
CU SN  
CU SN  
CU SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Call TI  
L5001  
IDQ1  
LM5001IDRQ1  
ACTIVE  
NRND  
D
D
2500  
95  
Green (RoHS  
& no Sb/Br)  
L5001  
IDQ1  
LM5001MA  
SOIC  
TBD  
L5001  
MA  
LM5001MA/NOPB  
LM5001MAX/NOPB  
LM5001SD/NOPB  
LM5001SDE/NOPB  
LM5001SDX/NOPB  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
SOIC  
D
95  
Green (RoHS  
& no Sb/Br)  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
L5001  
MA  
SOIC  
D
2500  
1000  
250  
4500  
Green (RoHS  
& no Sb/Br)  
L5001  
MA  
WSON  
WSON  
WSON  
NGT  
NGT  
NGT  
Green (RoHS  
& no Sb/Br)  
LM5001  
LM5001  
LM5001  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
30-Jul-2015  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish  
value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF LM5001, LM5001-Q1 :  
Catalog: LM5001  
Automotive: LM5001-Q1  
NOTE: Qualified Version Definitions:  
Catalog - TI's standard catalog product  
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
3-Aug-2015  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LM5001IDRQ1  
LM5001MAX/NOPB  
LM5001SD/NOPB  
LM5001SDE/NOPB  
LM5001SDX/NOPB  
SOIC  
SOIC  
D
8
8
8
8
8
2500  
2500  
1000  
250  
330.0  
330.0  
178.0  
178.0  
330.0  
12.4  
12.4  
12.4  
12.4  
12.4  
6.5  
6.5  
4.3  
4.3  
4.3  
5.4  
5.4  
4.3  
4.3  
4.3  
2.0  
2.0  
1.3  
1.3  
1.3  
8.0  
8.0  
8.0  
8.0  
8.0  
12.0  
12.0  
12.0  
12.0  
12.0  
Q1  
Q1  
Q1  
Q1  
Q1  
D
WSON  
WSON  
WSON  
NGT  
NGT  
NGT  
4500  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
3-Aug-2015  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LM5001IDRQ1  
LM5001MAX/NOPB  
LM5001SD/NOPB  
LM5001SDE/NOPB  
LM5001SDX/NOPB  
SOIC  
SOIC  
D
8
8
8
8
8
2500  
2500  
1000  
250  
367.0  
367.0  
210.0  
210.0  
367.0  
367.0  
367.0  
185.0  
185.0  
367.0  
35.0  
35.0  
35.0  
35.0  
35.0  
D
WSON  
WSON  
WSON  
NGT  
NGT  
NGT  
4500  
Pack Materials-Page 2  
MECHANICAL DATA  
NGT0008A  
SDC08A (Rev A)  
www.ti.com  
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