LM76005QRNPRQ1 [TI]
3.5V 至 60V、5A 同步降压稳压器 | RNP | 30 | -40 to 125;型号: | LM76005QRNPRQ1 |
厂家: | TEXAS INSTRUMENTS |
描述: | 3.5V 至 60V、5A 同步降压稳压器 | RNP | 30 | -40 to 125 稳压器 |
文件: | 总51页 (文件大小:3846K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LM76005-Q1
ZHCSKV2A –FEBRUARY 2020 –REVISED JULY 2020
LM76005-Q1 3.5V 至60V、5A 汽车同步降压转换器
1 特性
2 应用
• 符合面向汽车应用的AEC-Q100 标准
• 支持24V 电池的汽车ADAS
• 信息娱乐系统与仪表组
• 混合动力汽车/电动汽车
– 温度等级1:–40°C 至+125°C,TA
• 提供功能安全
– 可帮助进行功能安全系统设计的文档
• 专为汽车应用设计
3 说明
LM76005-Q1 稳压器是一款易于使用的同步降压直流/
直流转换器,能够以高达 60V 的输入电压驱动高达 5A
(LM76005-Q1) 的负载电流。容差高达 65V,有助于轻
松实现输入涌流保护。
– 高达65V 的输入瞬态保护
– 进行了优化,可满足低EMI 要求
– 引脚可选式FPWM 运行
– 可调频率范围:200kHz 至500kHz
– 以预偏置输出电压启动
LM76005-Q1 采用峰值电流模式控制,能够以很小的
解决方案尺寸提供出色的效率和输出精度。PWM 和
PFM 模式之间无缝转换,以及超低的 MOSFET 导通
电阻和外部偏置输入,均确保在整个负载范围内实现卓
越的效率。
– 保护特性:热关断、输入欠压锁定、逐周期电流
限制和断续短路保护
• 适用于可扩展电源
– 与以下器件引脚兼容:
• LM76002/3-Q1(60V、2.5A 或3.5A)
– 输出电压:1V 至95% VIN
– 与外部时钟保持同步
该器件需要的外部组件很少,其引脚专为简化 PCB 布
局而设计,可提供优异的 EMI (CISPR25) 和热性能。
LM76005-Q1 的小型解决方案尺寸和功能集旨在简化
各种终端设备的实施。
– 可调软启动(默认为6.3ms)
• 在整个负载范围内具有低功率耗散
– 稳压静态电流15µA
LM76005-Q1 器件采用具有可湿性侧面的 WQFN 30
引脚无引线封装。
– 400kHz(12VIN、5VOUT、2A)时的效率为
95%
器件信息
– PFM 效率在10mA(12VIN、5VOUT)时为92%
– 具有用于提升效率的外部偏置选项
• 使用LM76005-Q1 并借助WEBENCH® Power
Designer 创建定制设计方案
器件型号(1)
LM76005-Q1
封装尺寸(标称值)
封装
WQFN (30)
6.00mm × 4.00mm
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
100
98
BOOT
SW
VIN
PVIN
EN
CBOOT
96
CIN
94
VOUT
COUT
L
92
PGND
90
88
LM76005-Q1
86
BIAS
VCC
84
VIN = 12 V
VIN = 24 V
82
80
RFBT
C2
FB
0.001
0.01 0.02 0.05 0.1 0.2
Load Current (A)
0.5
1
2 3 45
LM76
RFBB
AGND
效率:VOUT = 5V,fSW = 400kHz,自动模式
简化版原理图
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SNVSBK6
LM76005-Q1
ZHCSKV2A –FEBRUARY 2020 –REVISED JULY 2020
www.ti.com.cn
Table of Contents
7.3 Feature Description...................................................12
7.4 Device Functional Modes..........................................19
8 Application and Implementation..................................21
8.1 Application Information............................................. 21
8.2 Typical Applications.................................................. 21
9 Power Supply Recommendations................................34
10 Layout...........................................................................35
10.1 Layout Guidelines................................................... 35
10.2 Layout Example...................................................... 38
11 Device and Documentation Support..........................39
11.1 Device Support........................................................39
11.2 Receiving Notification of Documentation Updates..39
11.3 Support Resources................................................. 39
11.4 Trademarks............................................................. 39
11.5 Electrostatic Discharge Caution..............................39
11.6 Support Resources................................................. 39
12 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
Pin Functions.................................................................... 4
6 Specifications.................................................................. 5
6.1 Absolute Maximum Ratings........................................ 5
6.2 ESD Ratings............................................................... 5
6.3 Recommended Operating Conditions.........................5
6.4 Thermal Information....................................................6
6.5 Electrical Characteristics.............................................6
6.6 Timing Characteristics.................................................8
6.7 Switching Characteristics............................................8
6.8 System Characteristics............................................... 9
6.9 Typical Characteristics..............................................10
7 Detailed Description......................................................11
7.1 Overview................................................................... 11
7.2 Functional Block Diagram......................................... 11
Information.................................................................... 39
4 Revision History
注:以前版本的页码可能与当前版本的页码不同
Changes from Revision * (February 2020) to Revision A (July 2020)
Page
• 将器件状态从“预告信息”更改为“量产数据”................................................................................................ 1
• 更新了整个文档中的表格、图和交叉参考的编号格式.........................................................................................1
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5 Pin Configuration and Functions
NC
29
NC
28
NC
30
NC
27
26 PGND
SW
SW
SW
1
2
3
4
5
25
24
23
22
PGND
PGND
NC
SW
SW
PVIN
PVIN
BOOT
21
20
19
18
6
7
DAP
NC
VCC
PVIN
NC
8
BIAS
9
EN
17 SYNC/MODE
16 PGOOD
RT
10
11
SS/TRK
13
14
15
12
FB
AGND AGND AGND
图5-1. RNP Package 30-Pin WQFN Top View
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Pin Functions
PIN
I/O(1)
DESCRIPTION
NO.
NAME
Switching output of the regulator. Internally connected to the source of the HS FET and
drain of the LS FET. Connect to power inductor and bootstrap capacitor.
1, 2, 3, 4, 5
SW
P
P
Bootstrap capacitor connection for high-side driver. Connect a high-quality 470-nF capacitor
from this pin to the SW pin.
6
BOOT
NC
Not internally connected. Connect pins 19, 27, 28, 29, and 30 to ground copper on PCB to
improve heat-sinking of the device and board level reliability. Leave pins 7 and 23 floating in
order to maximize distance from the high voltage input to ground.
7, 19, 23, 27,
28, 29, 30
—
Output of internal bias supply. Used as supply to internal control circuits. Connect a high-
quality 2.2-µF capacitor from this pin to GND. TI does not recommended loading this pin by
external circuitry.
8
VCC
P
Optional BIAS LDO supply input. TI recommends tying this to VOUT when 3.3 V ≤VOUT
≤
9
BIAS
RT
P
A
18 V, or tying to an external 3.3-V or 5-V rail if available, to improve efficiency. When used,
place a 1-µF capacitor from this terminal to ground. Tie to ground when not in use.
Switching frequency setting pin. Place a resistor from this pin to ground to set the switching
frequency. If floating, the default switching frequency is 400 kHz. Do not short to ground.
10
Soft-start control pin. Leave this pin floating to use the 6.3-ms internal soft-start ramp. An
external capacitor can be connected from this pin to ground to extend the soft-start time. A
2-µA current sourced from this pin can charge the capacitor to provide the ramp. Connect to
external ramp for tracking. Do not short to ground.
11
SS/TRK
A
Feedback input for output voltage regulation. Connect a resistor divider to set the output
voltage. Never short this terminal to ground during operation.
12
16
FB
A
A
Open-drain power-good flag output. Connect to suitable voltage supply through a current
limiting resistor. High = VOUT regulation OK, Low = VOUT regulation fault. PGOOD = Low
when EN = Low
PGOOD
Synchronization input and mode setting pin. Do not float, tie to ground if not used.
Tie to ground: DCM/PFM operation under light loads, improved efficiency
Tie to logic high: forced PWM under light loads, constant switching frequency over load
Tie to external clock source: synchronize switching action to the clock, forced PWM under
light loads.
17
SYNC/MODE
A
Triggers on the rising edge of external clock.
Precision-enable input to regulator. Do not float. High = on, Low = off. Can be tied to VIN
Precision-enable input allows adjustable UVLO by external resistor divider.
.
18
EN
A
Analog ground. Ground reference for internal references and logic. All electrical parameters
are measured with respect to this pin. Connect to system ground on PCB.
13, 14, 15
AGND
G
Supply input to internal bias LDO and HS FET. Connect to input supply and input bypass
capacitors CIN. CIN must be placed right next to this pin and PGND and connected with
short traces.
20, 21, 22
24, 25, 26
EP
PVIN
PGND
DAP
P
G
Power ground, connected to the source of LS FET internally. Connect to system ground,
DAP/EP, AGND, and ground side of CIN and COUT. Path to CIN must be as short as
possible.
Low impedance connection to AGND. Connect to system ground on PCB. Major heat
dissipation path for the die. Must be used for heat sinking by soldering to ground copper on
PCB. Thermal vias are preferred.
—
(1) A = Analog, O = Output, I = Input, G = Ground, P = Power
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6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range of –40°C to +125°C (unless otherwise noted)(1)
PARAMETER
MIN
–0.3
–0.3
–0.3
–0.1
–0.3
–0.3
–0.3
–0.3
–3.5
–0.3
–0.3
–40
MAX
UNIT
PVIN to PGND
EN to AGND
65
VIN + 0.3
FB, RT, SS/TRK to AGND
PGOOD to AGND
SYNC to AGND
5
Input voltages
20
V
5.5
BIAS to AGND
Lower of (VIN + 0.3) or 30
AGND to PGND
0.3
VIN + 0.3
65
SW to PGND
SW to PGND less than 10-ns transients
BOOT to SW
Output voltages
V
5.5
VCC to AGND
5.5
Junction temperature, TJ
Storage temperature, Tstg
150
°C
°C
150
–65
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
6.2 ESD Ratings
VALUE
±2000
±500
UNIT
V
Human-body model (HBM), per AEC Q100-002(1)
Charged-device model (CDM), per AEC Q100-011
V(ESD)
Electrostatic discharge
V
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification
6.3 Recommended Operating Conditions
Over the recommended operating junction temperature range of -40°C to 125°C (unless otherwise noted)(1)
MIN
3.5
0
MAX
UNIT
PVIN to PGND
60
EN
VIN
4.5
18
FB
0
PGOOD
0
Input voltages
V
BIAS input not used
0
0.3
Lower of (VIN + 0.3)
or 24
BIAS input used
AGND to PGND
FSW
0
–0.1
200
0.1
Switching
Frequency
500
kHz
Output voltage VOUT
Output current IOUT
1
0
95% of VIN
V
A
5
Temperature
Operating junction temperature, TJ
125
°C
–40
(1) Recommended operating rating indicate conditions for which the device is intended to be functional, but do not ensure specific
performance limits. For ensured specifications, see Electrical Characteristics Table.
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UNIT
6.4 Thermal Information
LM76005-Q1
THERMAL METRIC(1)
RNP (WQFN)
30 PINS
29.6
17.6
9.1
RθJA
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
0.2
ψJT
9.0
ψJB
RθJC(bot)
1.0
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
Limits apply over the recommended operating junction temperature (TJ) range of –40°C to +125°C, unless otherwise stated.
Minimum and maximum limits are specified through test, design or statistical correlation. Typical values represent the most
likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated, the following
conditions apply: VIN = 24 V, VOUT = 3.3 V, fSW = 400 kHz.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY VOLTAGE (PVIN PINS)
Operating input voltage
range
VIN
3.5
60
10
12
V
Shutdown quiescent current;
ISD
VEN = 0 V
1.2
2
µA
µA
measured at PVIN pin(1)
Operating quiescent current VEN = 2 V, VFB = 1.5 V, VBIAS = 3.3 V
from VIN (non-switching)
IQ_NONSW
external
ENABLE (EN PIN)
Enable input high level for
VCC output
VEN_VCC_H
VEN_VCC_L
VEN_VOUT_H
VEN rising
1.2
V
V
V
Enable input low level for
VCC output
VEN falling
0.3
Enable input high level for
VOUT
VEN rising
1.14
1.204
1.25
200
Enable input hysteresis for
VOUT
VEN_VOUT_HYS
VEN falling hysteresis
mV
nA
–150
ILKG_EN
Enable input leakage current VEN = 2 V
1.4
INTERNAL LDO (VCC PIN, BIAS PIN)
PWM operation
PFM operation
VCC rising
3.29
3.1
V
V
VCC
Internal VCC voltage
2.96
3.14
–565
3.11
3.27
3.25
V
Internal VCC undervoltage
lockout
VCC_UVLO
VCC falling hysteresis
VBIAS rising
mV
V
VBIAS_ON
Input change over
VBIAS falling hysteresis
mV
–63
Operating quiescent current
IBIAS_NONSW from external VBIAS (non-
switching)
VEN = 2 V, VFB = 1.5 V, VBIAS = 3.3 V
external
21
50
µA
VOLTAGE REFERENCE (FB PIN)
VFB
Feedback voltage
PWM mode
VFB = 1 V
0.987
1.006
0.2
1.017
60
V
Input leakage current at FB
pin
ILKG_FB
nA
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Limits apply over the recommended operating junction temperature (TJ) range of –40°C to +125°C, unless otherwise stated.
Minimum and maximum limits are specified through test, design or statistical correlation. Typical values represent the most
likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated, the following
conditions apply: VIN = 24 V, VOUT = 3.3 V, fSW = 400 kHz.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
HIGH SIDE DRIVER (BOOT PIN)
BOOT - SW undervoltage
lockout
VBOOT_UVLO
1.6
2.2
2.7
V
CURRENT LIMITS AND HICCUP
Short-circuit, high-side
current limit
(2)
6.0
4.5
6.8
7.8
5.8
A
IHS_LIMIT
(2)
ILS_LIMIT
INEG_LIMIT
VHICCUP
IL_ZC
Low-side current limit
Negative current limit
Hiccup threshold on FB pin
Zero cross-current limit
5.1
–4.1
0.42
A
A
V
A
0.38
1.8
0.46
2.2
0.05
SOFT START (SS/TRK PIN)
ISSC
Soft-start charge current
2
2
µA
Soft-start discharge
resistance
RSSD
UVLO, TSD, OCP; or EN = 0 V
kΩ
POWER GOOD (PGOOD PIN) and OVERVOLTAGE PROTECTION
Power-good overvoltage
threshold
VPGOOD_OV
VPGOOD_UV
% of FB voltage
106%
86%
110%
113%
93%
Power-good undervoltage
threshold
% of FB voltage
90%
2.5%
1.3
VPGOOD_HYS Power-good hysteresis
% of FB voltage
Minimum input voltage for
VPGOOD_VALID
50-µA pullup to PGOOD pin, VEN = 0 V
2
V
proper PGOOD function
VEN = 2.5 V
VEN = 0 V
40
30
100
90
RPGOOD
Power-good on-resistance
Ω
MOSFETS
High-side MOSFET on-
resistance
(3)
(3)
RDS_ON_HS
IOUT = 1 A, VBIAS = VOUT = 3.3 V
IOUT = 1 A, VBIAS = VOUT = 3.3 V
95
45
150
85
mΩ
mΩ
Low-side MOSFET on-
resistance
RDS_ON_LS
THERMAL SHUTDOWN
Thermal shutdown threshold Shutdown threshold
Recovery threshold
150
135
°C
°C
(4)
TSD
(1) Shutdown current includes leakage current of the switching transistors.
(2) This current limit was measured as the internal comparator trip point. Due to inherent delays in the current limit comparator and
drivers, the peak current limit measured in closed loop with faster slew rate will be larger, and valley current limit will be lower.
(3) Measured at pins.
(4) Ensured by design.
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6.6 Timing Characteristics
MIN
NOM
MAX
UNIT
CURRENT LIMITS AND HICCUP
Number of switching cycles
before hiccup is tripped
(1)
NOC
128
46
Cycles
ms
Overcurrent hiccup retry delay
time
tOC
SOFT START (SS/TRK PIN)
CSS = OPEN, from EN rising
edge to PGOOD rising edge
tSS
Internal soft-start time
3.5
6.3
ms
POWER GOOD (PGOOD PIN) and OVERVOLTAGE PROTECTION
PGOOD rising edge deglitch
delay
tPGOOD_RISE
tPGOOD_FALL
80
80
140
140
200
200
µs
µs
PGOOD falling edge deglitch
delay
(1) Ensured by design
6.7 Switching Characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
PWM LIMITS (SW PINS)
tON-MIN
tOFF-MIN
tON-MAX
Minimum switch on-time
Minimum switch off-time
Maximum switch on-time
65
95
8
95
130
11.4
ns
ns
µs
HS timeout in dropout
3.8
OSCILLATOR (RT and SYNC PINS)
fADJ
Adjustable frequency by RT or SYNC
270
350
300
400
330
450
2
kHz
kHz
V
RT =133 kΩ, 0.1%
fOSC
Internal oscillator frequency
Sync input high level threshold
Sync input low level threshold
RT = Open
VSYNC_HIGH
VSYNC_LOW
0.4
V
Mode input high level threshold for
FPWM
VMODE_HIGH
0.42
V
Mode input low level threshold for
AUTO mode
VMODE_LOW
tSYNC_MIN
0.4
80
V
Sync input minimum on- and off-time
ns
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6.8 System Characteristics
The following specifications apply to the circuit found in the typical application schematic with appropriate modifications.
These parameters are not tested in production and represent typical performance only. Unless otherwise stated the following
conditions apply: TA = 25°C, VIN = 24 V, VOUT = 3.3 V, fSW = 400 kHz.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Output voltage offset at no load VIN = 3.8 V to 36 V, VSYNC = 0 V, auto mode
VFB_PFM
2%
in auto mode
IOUT = 0 A
Minimum input to output
Vdrop
voltage differential to maintain VOUT = 5 V, IOUT = 1.5 A, fSW = 400 kHz
specified accuracy
0.65
V
Operating quiescent current
(switching)
VEN = 3.3 V, IOUT = 0 A, RT = open, VBIAS
VOUT = 3.3 V, RFBT = 1 Meg
=
IQ_SW
15
1
µA
A
IPEAK_MIN
IBIAS_SW
DMAX
Minimum inductor peak current VSYNC = 0 V, IOUT = 10 mA
Operating quiescent current
fSW = 400 kHz, IOUT = 1 A
from external VBIAS (switching)
7
mA
Maximum switch duty cycle
While in frequency foldback
97.5%
Dead time between high-side
and low-side MOSFETs
tDEAD
4
ns
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6.9 Typical Characteristics
Unless otherwise specified, VIN = 24 V. Curves represent most likely parametric norm at specified condition.
140
130
120
110
100
90
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
VIN = 24 V
VIN = 3.5 V
VIN = 60 V
80
70
800
700
60
600
500
400
300
50
40
HS Switch
LS Switch
30
200
20
-40
-20
0
20
40
60
80
100 120 140
-40
-20
0
20
40
60
80
100 120 140
Temperature (èC)
Temperature (èC)
D002
D001
图6-2. Shutdown Quiescent Current
图6-1. High-Side and Low-Side Switch RDS-ON
1.008
1.4
1.2
1
Temp = -40èC
Temp = 25èC
Temp = 125èC
1.007
1.006
1.005
1.004
1.003
1.002
1.001
1
0.8
0.6
0.4
0.2
VEN_VOUT Rising
VEN_VOUT Falling
VEN_VCC Rising
VEN_VCC Falling
0
6
12
18
24
30
36
Input Voltage (V)
42
48
54
60
-40
-20
0
20
40
60
80
100 120 140
D003
Temperature (èC)
D008
图6-3. Feedback Voltage
图6-4. Enable Threshold
115
110
105
100
95
OV Tripping
OV Recovery
UV Recovery
UV Tripping
90
85
-40
-20
0
20
40
60
80
100 120 140
Temperature (èC)
D009
图6-5. PGOOD Threshold
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7 Detailed Description
7.1 Overview
The LM76005-Q1 regulator is an easy-to-use synchronous step-down DC-DC converter that operates from 3.5-V
to 60-V supply voltage. The device is capable of delivering up to 5-A DC load current with exceptional efficiency
and thermal performance in a very small solution size.
The LM76005-Q1 employs fixed-frequency peak-current-mode control with configurable discontinuous
conduction mode (DCM) and pulse frequency modulation (PFM) mode at light loads to achieve high efficiency
across the load range. The device can also be configured as forced-PWM (FPWM) operation to keep constant
switching frequency over the load range. The device is internally compensated, which reduces design time and
requires fewer external components. The switching frequency is programmable from 200 kHz to 500 kHz by an
external resistor. The LM76005-Q1 is also capable of synchronization to an external clock operating within the
200-kHz to 500-kHz frequency range. The wide switching frequency range allows the device to meet a wide
range of design requirements. It can be optimized for a very small solution size with higher frequency or for very
high efficiency with lower switching frequency. It has very small minimum HS MOSFET on-time (tON-MIN) and
minimum off-time (tOFF-MIN) to provide wide range of voltage conversion. Automated frequency foldback is
employed under tON-MIN or tOFF-MIN condition to further extend the operation range.
The LM76005-Q1 also features the following:
• A power-good (PGOOD) flag
• Precision enable
• Internal or adjustable soft-start rate
• Start-up with pre-bias voltage
• Output voltage tracking
It provides a flexible and easy-to-use solution for wide range of applications. Protection features include thermal
shutdown, VCC undervoltage lockout, cycle-by-cycle current limiting, and short-circuit hiccup protection.
The family requires very few external components and has a pinout designed for simple, optimum PCB layout for
EMI and thermal performance. The LM76005-Q1 device is available in a 30-pin WQFN lead-less package.
7.2 Functional Block Diagram
EN
VCC
BIAS
LDO
PVIN
ISSC
Internal
SS
VBOOT
Precision
Enable
BOOT
VCC
SS/TRK
HS I Sense
ICMD
+
EA
+
VBOOT
REF
œ
RC
CC
œ
+
UVLO
FB
UVLO
FB
OV/UV
Detector
SW
PFM
Detector
CONTROL LOGIC
PGood
PGOOD
TSD
HICCUP
Detector
+
œ
Slope Comp
Oscillator
CLK
LS I Sense
ICMD
AGND
FPWM
SYNC/
MODE
RT
PGND
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7.3 Feature Description
7.3.1 Fixed-Frequency, Peak-Current-Mode Control
The following operation description of the LM76005-Q1 refers to 节 7.2 and to the waveforms in 图 7-1. The
LM76005-Q1 supplies a regulated output voltage by turning on the internal high-side (HS) and low-side (LS)
NMOS switches with varying duty cycle (D). During high-side switch on-time, tON, the SW pin voltage VSW
swings up to approximately VIN, and the inductor current, iL, increases with linear slope. The HS switch is turned
off by the control logic. During the HS switch off-time, tOFF, the LS switch is turned on. Inductor current
discharges through the LS switch, which forces the VSW to swing below ground by the voltage drop across the
LS switch. The regulator loop adjusts the duty cycle to maintain a constant output voltage. The control parameter
of a buck converter is defined as duty cycle D = tON / TSW. In an ideal buck converter, where losses are ignored,
D is proportional to the output voltage and inversely proportional to the input voltage: D = VOUT / VIN.
VSW
D = tON/ TSW
VIN
tON
tOFF
t
0
-VD
TSW
iL
ILPK
IOUT
ûiL
t
0
图7-1. SW Node and Inductor Current Waveforms in Continuous Conduction Mode
The LM76005-Q1 synchronous buck converter employs peak current-mode control topology. A voltage-feedback
loop is used to get accurate DC-voltage regulation by adjusting the peak current command based on voltage
offset. The peak inductor current is sensed from the HS switch and compared to the peak current to control the
on-time of the HS switch. The voltage feedback loop is internally compensated, which allows for fewer external
components, makes it easy to design, and provides stable operation with almost any combination of output
capacitors. The regulator operates with fixed switching frequency in continuous conduction mode (CCM) and
discontinuous conduction mode (DCM). At very light load, the LM76005-Q1 operates in PFM to maintain high
efficiency, and the switching frequency decreases with reduced load current.
7.3.2 Light Load Operation Modes —PFM and FPWM
DCM operation is employed in the LM76005-Q1 when the inductor current valley reaches zero. The LM76005-
Q1 is in DCM when load current is less than half of the peak-to-peak inductor current ripple in CCM. In DCM, the
LS switch is turned off when the inductor current reaches zero. Switching loss is reduced by turning off the LS
FET at zero current, and the conduction loss is lowered by not allowing negative current conduction. Power
conversion efficiency is higher in DCM than CCM under the same conditions.
In DCM, the HS switch on-time reduces with lower load current. When either the minimum HS switch on-time
(tON-MIN) or the minimum peak inductor current (IPEAK-MIN) is reached, the switching frequency decreases to
maintain regulation. At this point, the LM76005-Q1 operates in PFM. In PFM, switching frequency is decreased
by the control loop when load current reduces to maintain output voltage regulation. Reference the 节 8.2.3 for
typical steady state switching behavior in PFM. Switching loss is further reduced in PFM operation due to less
frequent switching actions.
In PFM operation, a small positive DC offset is required at the output voltage to activate the PFM detector. The
lower the frequency is in PFM, the more DC offset is needed at VOUT. See 节 6.9 for typical DC offset at very
light load. If the DC offset on VOUT is not acceptable for a given application, TI recommends a static load at
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output to reduce or eliminate the offset. Lowering values of the feedback divider RFBT and RFBB can also serve
as a static load. In conditions with low VIN and high frequency, the LM76005-Q1 may not enter PFM mode if the
output voltage cannot be charged up to provide the trigger to activate the PFM detector. Once the LM76005-Q1
is operating in PFM mode at higher VIN, it remains in PFM operation when VIN is reduced.
Alternatively, the device can run in a forced pulse-width-modulation (FPWM) mode where the switching
frequency does not lower with load, and no offset is added to affect the VOUT accuracy unless the minimum on-
time of the converter is reached.
7.3.3 Adjustable Output Voltage
The voltage regulation loop in the LM76005-Q1 regulates the FB voltage to be the same as the internal
reference voltage. The output voltage of the LM76005-Q1 is set by a resistor divider to program the ratio from
VOUT to VFB. The resistor divider is connected from the output node to ground with the mid-point connecting to
the FB pin.
V
OUT
R
FBT
FBB
FB
R
图7-2. Output Voltage Setting
The voltage reference system produces a precise ±1% voltage reference over temperature. TI recommends
using divider resistors with 1% tolerance or better with temperature coefficient of 100 ppm or lower. Selection of
RFBT equal or lower than 100 kΩ is also recommended. RFBB can be calculated by 方程式1:
VFB
RFBB
=
RFBT
VOUT - VFB
(1)
Larger RFBT and RFBB values reduce the current that goes through the divider, helping to increase light load
efficiency. However, larger values also make the feedback path more susceptible to noise. If efficiency at very
light load is not critical in a certain application, TI recommends RFBT = 10 kΩ to 100 kΩ. If the resistor divider is
not connected properly, output voltage cannot be regulated because the feedback loop is broken. If the FB pin is
shorted to ground or disconnected, the output voltage is driven close to VIN because the regulator detects very
low voltage on the FB node. The load connected to VOUT can be damaged in this case. It is important to route
the feedback trace away from the noisy area of the PCB. For more layout recommendations, see 节10.
The minimum output voltage achievable equals VFB, with RFBB open. The maximum VOUT is limited by the
maximum duty cycle at a given frequency:
DMAX = 1 –(tOFF_MIN / TSW
)
(2)
where
• tOFF_MIN is the minimum off-time of the HS switch
• TSW = 1 / fSW is the switching period
Ideally, without frequency foldback, VOUT_MAX = VIN_MIN × DMAX
Maximum output voltage with frequency foldback can be estimated using Equation 3:
tON_MAX
VOUT _MAX = V
ì
- IOUT
ì
R
(
+ DCR
)
IN_MIN
DS_ON_HS
tON_MAX + tOFF_MIN
(3)
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7.3.4 Enable (EN Pin) and UVLO
System UVLO by EN and VCC_UVLO voltage on the EN pin (VEN) controls the ON/OFF functionality of the
LM76005-Q1. Applying a voltage less than 0.3 V to the EN input shuts down the operation of the LM76005-Q1.
In shutdown mode, the quiescent current drops to typically 1.2 µA at VIN = 24 V.
The internal LDO output voltage VCC is turned on when VEN is higher than 1.2 V. The LM76005-Q1 switching
action and output regulation are enabled when VEN is greater than 1.204 V (typical). The LM76005-Q1 supplies
regulated output voltage when enabled and output current up to 5 A. The EN pin is an input and cannot be open
circuit or floating. The simplest way to enable the operation of the LM76005-Q1 is to connect the EN pin to PVIN
pins directly. This allows self-start-up of the LM76005-Q1 when VIN is within the operation range.
Many applications can benefit from the employment of an enable divider RENT and RENB (see 图7-3) to establish
a precision system UVLO level for the stage. System UVLO can be used for supplies operating from utility power
as well as battery power. It can be used for sequencing, ensuring reliable operation, or supply protection, such
as a battery. An external logic signal can also be used to drive EN input for system sequencing and protection.
VIN
RENT
ENABLE
RENB
图7-3. VIN UVLO
With a selected RENT, the RENB can be calculated by:
VEN_ VOUT _H ì RENT
RENB
=
VIN_ON_H - VEN_VOUT_H
(4)
where
• VIN_ON_H is the desired supply voltage threshold to turn on this device
• VEN_VOUT_H can be taken from device data sheet
Note that the divider adds to supply quiescent current by VIN / (RENT + RENB). Small RENT and RENB values add
more quiescent current loss. However, large divider values make the node more sensitive to noise. RENT in the
hundreds of kΩ range is a good starting point.
7.3.5 Internal LDO, VCC UVLO, and Bias Input
The LM76005-Q1 has an internal LDO generating VCC voltage for control circuitry and MOSFET drivers. The
nominal voltage for VCC is 3.29 V. The VCC pin must have a 1-µF to 4.7-µF bypass capacitor placed as close as
possible to the pin and properly grounded. Do not load or short the VCC pin to ground during operation. Shorting
the VCC pin to ground during operation can damage the device.
A UVLO prevents the LM76005-Q1 from operating until the VCC voltage exceeds VCC_UVLO. The VCC_UVLO
threshold is 3.14 V and has approximately 565 mV of hysteresis, so the device operates until VCC drops below
2.575 V (typical). Hysteresis prevents the device from turning off during power up if VIN droops due to input
current demands.
The LDO can generate VCC from two inputs: the supply voltage VIN and the BIAS input. The LDO power loss is
calculated by ILDO × (VINLDO –VOUTLDO). The higher the difference between the input and output voltages of the
LDO, the more losses occur to supply the same LDO output current. The BIAS input is designed to reduce the
difference of the input and output voltages of the LDO to improve efficiency, especially at light load. TI
recommends tying the BIAS pin to VOUT when the output voltage is equal to or greater than 3.3 V and less than
18 V. Tie the BIAS pin to ground for applications less than 3.3 V or greater than 18 V. BIAS can also tie to
external voltage source if available to improve efficiency. When used, TI recommends a 1-µF to 10-µF high-
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quality ceramic capacitor be used to bypass the BIAS pin to ground. If there is high-frequency noise or voltage
spikes present on VOUT (during transient events or fault conditions), TI recommends connecting a resistor (1 to
10 Ω) between VOUT and BIAS.
The VCC voltage is typically 3.29 V. When the LM76005-Q1 is operating in PFM mode with frequency foldback,
VCC voltage is reduced to 3.1 V (typical) to further decrease the quiescent current and improve efficiency at very
light loads.
7.3.6 Soft Start and Voltage Tracking (SS/TRK)
The LM76005-Q1 has a flexible and easy-to-use start-up rate control pin: SS/TRK. The soft-start feature
prevents inrush current from impacting the LM76005-Q1 and its supply when power is first applied. Soft start is
achieved by slowly ramping up the target regulation voltage when the device is first enabled or powered up. The
simplest way to use the device is to leave the SS/TRK pin open circuit or floating. The LM76005-Q1 employs the
internal soft-start control ramp and starts up to the regulated output voltage in 6.3 ms typically. In applications
with a large amount of output capacitors, higher VOUT, or other special requirements, the soft-start time can be
extended by connecting an external capacitor, CSS, from SS/TRK pin to AGND. Extended soft-start time further
reduces the supply current required to charge up output capacitors and supply any output loading. An internal
current source (ISSC = 2.2 μA) charges CSS and generates a ramp from 0 V to VFB to control the ramp-up rate of
the output voltage. For a desired soft-start time tSS, the capacitance for CSS can be found by Equation 5:
CSS = ISSC × tSS
(5)
where
• CSS = soft-start capacitor value (µF)
• ISSC = soft-start charging current (µA)
• tSS = desired soft-start time (s)
The soft-start capacitor CSS is discharged by an internal FET when VOUT is shut down by hiccup protection or
ENABLE = logic low. When a large CSS is applied, and EN is toggled low only for a short period of time, CSS may
not be fully discharged. The next soft-start ramp follows internal soft-start ramp before reaching the leftover
voltage on CSS and then follows the ramp programmed by CSS. If this is not acceptable for a certain application,
an R-C low-pass filter can be added to EN to slow down the shutting down of VCC, allowing more time to
discharge CSS
.
The LM76005-Q1 is capable of start-up into pre-biased output conditions. When the inductor current reaches
zero, the LS switch is turned off to avoid negative current conduction. This operation mode is also called diode
emulation mode. It is built-in by the DCM operation in light loads. With a pre-biased output voltage, the
LM76005-Q1 waits until the soft-start ramp allows regulation above the pre-biased voltage and then follows the
soft-start ramp to the regulation level. When an external voltage ramp is applied to the SS/TRK pin, the
LM76005-Q1 FB voltage follows the ramp if the ramp magnitude is lower than the internal soft-start ramp. A
resistor divider pair can be used on the external control ramp to the SS/TRK pin to program the tracking rate of
the output voltage. The final voltage detected by the SS/TRK pin must not fall below 1.2 V to avoid abnormal
operation.
VOUT tracked to an external voltage ramp has the option of ramping up slower or faster than the internal voltage
ramp. VFB always follows the lower potential of the internal voltage ramp and the voltage on the SS/TRK pin. 图
7-4 shows resistive divider connection if external ramp tracking is desired.
EXT RAMP
RTRT
SS/TRK
RTRB
图7-4. Soft-Start Tracking External Ramp
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图 7-5 shows the case when VOUT ramps more slowly than the internal ramp, while 图 7-6 shows when VOUT
ramps faster than the internal ramp. Faster start-up time can result in inductor current tripping current protection
during start-up. Use with special care.
Enable
Internal SS Ramp
Ext Tracking Signal to SS pin
VOUT
图7-5. Tracking with Longer Start-up Time than the Internal Ramp
Enable
Internal SS Ramp
Ext Tracking Signal to SS pin
VOUT
图7-6. Tracking with Shorter Start-up Time than the Internal Ramp
The LM76005-Q1 is capable of start-up into pre-biased output conditions. During start-up, the device sets the
minimum inductor current to zero to avoid discharging a pre-biased load.
7.3.7 Adjustable Switching Frequency (RT) and Frequency Synchronization
The switching frequency of the LM76005-Q1 can be programmed by the impedance RT from the RT pin to
ground. The frequency is inversely proportional to the RT resistance. The RT pin can be left floating, and the
LM76005-Q1 operates at 400-kHz default switching frequency. The RT pin is not designed to be shorted to
ground.
For an desired frequency, RT can be found by:
38400
RT(kW) =
Frequency(kHz) - 14.33
(6)
表7-1. Switching Frequency vs RT
SWITCHING FREQUENCY (kHz)
RT RESISTANCE (kΩ)
200
300
400
500
206.82
134.42
99.57
79.07
The LM76005-Q1 switching action can also be synchronized to an external clock from 200 kHz to 500 kHz. TI
recommends connecting an external clock to the SYNC pin with an appropriate termination resistor. Ground the
SYNC pin if not used.
SYNC
EXT CLOCK
RTERM
图7-7. Frequency Synchronization
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The recommendations for the external clock include high level no lower than 2 V, low level no higher than 0.4 V,
duty cycle between 10% and 90%, and both positive and negative pulse width no shorter than 80 ns. When the
external clock fails at logic high or low, the LM76005-Q1 switches at the frequency programmed by the RT
resistor after a time-out period. TI recommends connecting a resistor RT to the RT pin so that the internal
oscillator frequency is the same as the target clock frequency when the LM76005-Q1 is synchronized to an
external clock. This allows the regulator to continue operating at approximately the same switching frequency if
the external clock fails.
The choice of switching frequency is usually a compromise between conversion efficiency and the size of the
circuit. Lower switching frequency implies reduced switching losses (including gate charge losses, switch
transition losses, and so forth) and usually results in higher overall efficiency. However, higher switching
frequency allows use of smaller LC output filters and hence a more compact design. Lower inductance also
helps transient response (higher large signal slew rate of inductor current), and reduces the DCR loss. The
optimal switching frequency is usually a trade-off in a given application and thus needs to be determined on a
case-by-case basis. It is related to the following:
• Input voltage
• Output voltage
• Most frequent load current level or levels
• External component choices
• Circuit size requirement
The choice of switching frequency can also be limited if an operating condition triggers tON-MIN or tOFF-MIN
.
7.3.8 Minimum On-Time, Minimum Off-Time, and Frequency Foldback at Dropout Conditions
Minimum on-time, tON-MIN, is the smallest duration of time that the HS switch can be on. tON-MIN is typically 65 ns
in the LM76005-Q1. Minimum off-time, tOFF-MIN, is the smallest duration that the HS switch can be off. tOFF-MIN is
typically 95 ns in the LM76005-Q1. In CCM operation, tON-MIN and tOFF-MIN limits the voltage conversion range
given a selected switching frequency. The minimum duty cycle allowed is:
DMIN = tON-MIN × fSW
(7)
And the maximum duty cycle allowed is:
DMAX = 1 –tOFF-MIN × fSW
(8)
Given fixed tON-MIN and tOFF-MIN, the higher the switching frequency the narrower the range of the allowed duty
cycle. In the LM76005-Q1, frequency foldback scheme is employed to extend the maximum duty cycle when
tOFF-MIN is reached. The switching frequency decreases once longer duty cycle is needed under low VIN
conditions. Such a wide range of frequency foldback allows the LM76005-Q1 output voltage to stay in regulation
with a much lower supply voltage VIN. This leads to a lower effective dropout voltage.
Given an output voltage, the choice of the switching frequency affects the allowed input voltage range, solution
size, and efficiency. The maximum operational supply voltage can be found by:
VIN_MAX = VOUT / (fSW × tON-MIN
)
(9)
At lower supply voltage, the switching frequency decreases once tOFF-MIN is tripped. The minimum VIN without
frequency foldback can be approximated by:
VIN_MIN = VOUT / (fSW × tOFF-MIN
)
(10)
Considering power losses in the system with heavy load operation, VIN-MIN is higher than the result calculated in
Equation 10. With frequency foldback, VIN-MIN is lowered by decreased fSW. When the device is operating in auto
mode at voltages near maximum rated input voltage and light load conditions, an increased output voltage ripple
during load transient can be observed. For this reason, TI recommends that the device operating point be
calculated with sufficient operational margin so that minimum on-time condition is not triggered.
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7.3.9 Bootstrap Voltage and VBOOT UVLO (BOOT Pin)
The driver of the power switch (HS switch) requires bias higher than VIN when the HS switch is ON. The
capacitor connected between CBOOT and SW works as a charge pump to boost voltage on the BOOT pin to (VSW
+ VCC). The boot diode is integrated on the LM76005-Q1 die to minimize physical size. TI recommends a 0.47-
µF, 6.3-V or higher capacitor for CBOOT. The VBOOT_UVLO threshold is typically 2.2 V. If the CBOOT capacitor is not
charged above this voltage with respect to SW, the device initiates a charging sequence using the low-side FET.
7.3.10 Power Good and Overvoltage Protection (PGOOD)
The LM76005-Q1 has a built-in power-good flag shown on the PGOOD pin to indicate whether the output
voltage is within its regulation level. The PGOOD signal can be used for start-up sequencing of multiple rails.
The PGOOD pin is an open-drain output that requires a pullup resistor to an appropriate logic voltage (any
voltage below 12 V). The pin can sink 5 mA of current and maintain its specified logic low level. A typical range
of pullup resistor value is 10 kΩ to 100 kΩ. When the FB voltage is outside the power-good band, +10% above
and –10% below the internal reference VREF typically, the PGOOD switch is turned on, and the PGOOD pin
voltage is pulled to ground. When the FB is 2.5% (typical) closer to FB than the PGOOD threshold, the PGOOD
switch is turned off, and the pin is pulled up to the voltage connected to the pullup resistor. Both rising and falling
edges of the power-good flag have a built-in 140-µs (typical) deglitch delay. To pull up the PGOOD pin to a
voltage higher than 15 V, a resistor divider can be used to divide the voltage down.
VPU
RPGT
PGOOD
RPGB
图7-8. PGOOD Resistor Divider
For given pullup voltage, VPU, the desired voltage on PGOOD pin, VPG, and RPGT chosen, use Equation 11 to
calculate RPGB
:
VPG
RPGB
=
RPGT
VPU - VPG
(11)
7.3.11 Overcurrent and Short-Circuit Protection
The LM76005-Q1 is protected from overcurrent conditions by cycle-by-cycle current limiting on both peak and
valley of the inductor current. Hiccup mode is activated if a fault condition persists to prevent overheating.
High-side MOSFET overcurrent protection is implemented by the nature of the peak current-mode control. The
HS switch current is sensed when the HS is turned on after a blanking time. The HS switch current is compared
to either the minimum of a fixed current set point (IHS_Limit) or the output of the voltage regulation loop minus
slope compensation every switching cycle.
When the LS switch is turned on, the current going through it is also sensed and monitored. Before turning off
the LS switch at the end of every clock cycle, the LS current is compared to the LS current limit. If the LS current
limit is exceeded, the LS MOSFET stays on, and the HS switch is not turned on. The LS switch is kept ON so
that inductor current keeps ramping down, until the inductor current ramps below ILS_LIMIT. The LS switch is
turned off once the LS current falls below the limit, and the HS switch is turned on again after a dead time.
If the current of the LS switch is higher than the LS current limit for 128 consecutive cycles, and the feedback
voltage falls 60% below regulation, hiccup current-protection mode is activated. In hiccup mode, the regulator is
shut down and kept off for 46 ms typically before the LM76005-Q1 tries to start again. If overcurrent or a short-
circuit fault condition still exists, hiccup repeats until the fault condition is removed. Hiccup mode reduces power
dissipation under severe overcurrent conditions, and prevents overheating and potential damage to the device.
Under non-severe overcurrent conditions when the feedback voltage has not fallen 60% below regulation, the
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LM76005-Q1 reduces the switching frequency and keeps the inductor current valley clamped at the LS current
limit level. This operation mode allows slight overcurrent operation during load transients without tripping hiccup.
If tracking was used for initial sequencing, the device attempts to restart using the internal soft-start circuit until
the tracking voltage is reached.
7.3.12 Thermal Shutdown
Thermal shutdown limits total power dissipation by turning off the internal switches when the device junction
temperature exceeds 150°C (typical). After thermal shutdown occurs, hysteresis prevents the device from
switching until the junction temperature drops to approximately 135°C. When the junction temperature falls
below 135°C, the LM76005-Q1 attempts to soft start.
7.4 Device Functional Modes
7.4.1 Shutdown Mode
The EN pin provides electrical on/off control for the LM76005-Q1. When the EN pin voltage is below 0.3 V
(typical), both the regulator and the internal LDO have no output voltages, and the device is in shutdown mode.
In shutdown mode the quiescent current drops to typically 1.2 µA. The LM76005-Q1 also employs UVLO
protection. If VCC voltage is below the UVLO level, the output of the regulator is turned off.
7.4.2 Standby Mode
The internal LDO has a lower EN threshold than the regulator. When the EN pin voltage is above 1.2 V
(maximum) and below the precision enable threshold for the output voltage, the internal LDO regulates the VCC
voltage at 3.29 V typically. The precision enable circuitry is ON once VCC is above the UVLO. The internal
MOSFETs remain in tri-state unless the voltage on EN pin goes above the precision enable threshold. The
LM76005-Q1 also employs UVLO protection. If VCC voltage is below the UVLO level, the output of the regulator
is turned off.
7.4.3 Active Mode
The LM76005-Q1 is in active mode when the EN pin and UVLO high threshold levels are satisfied. The simplest
way to enable the operation of the LM76005-Q1 is to connect the EN pin to VIN, which allows self start-up of the
LM76005-Q1 when the input voltage is in the operation range: 3.5 V to 60 V. See 节 7.3.4 for details on setting
these operating levels.
In active mode, depending on the load current, the LM76005-Q1 will be in one of five sub modes:
1. CCM with fixed switching frequency with load between half of IMINPK to full load
2. DCM when the load current is lower than half of the inductor current ripple
3. Light load mode where the device uses pulse frequency modulation (PFM) and lowers the switching
frequency at load under half of IPEAK_MIN to improve efficiency
4. Foldback mode when switching frequency is reduced to maintain output regulation with supply voltages that
cause the minimum tON or tOFF to be exceeded
5. Forced-pulse-width modulation (FPWM) is similar to CCM with fixed switching frequency, but extends the
fixed frequency range of operation from full to no load.
7.4.4 CCM Mode
CCM operation is employed in the LM76005-Q1 when the load current is higher than ½ of the peak-to-peak
inductor current. If the load current is decreased, the device enters DCM mode. In CCM operation, the frequency
of operation is constant and fixed unless the minimum tON or tOFF are exceeded which causes the part to enter
foldback mode (refer to 节 7.3.5 for details). In these cases, PWM is still maintained, but the frequency of
operation is folded back (reduced) to maintain proper regulation.
7.4.5 DCM Mode
DCM operation is employed in the LM76005-Q1 when the load current is lower than ½ of the peak-to-peak
inductor current. In DCM operation (also known as diode emulation mode), the LS FET is turned off when the
inductor current drops below 0 A to keep operation as efficient as possible by reducing switching losses and
preventing negative current conduction. In PWM operation, the frequency of operation is constant and fixed
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unless the load current is reduced below IPEAK_MIN, which causes the part to enter light load mode, or if the
minimum tON or tOFF are exceeded, which cause the device to enter foldback mode.
7.4.6 Light Load Mode
At light output current loads, PFM is activated for the highest efficiency possible. When the inductor current does
not reach IPEAK_MIN during a switching cycle, the on-time is increased, and the switching frequency reduces as
needed to maintain proper regulation. The on-time has a maximum value of 8 µs to avoid large output voltage
ripple in dropout conditions. Efficiency is greatly improved by reducing switching and gate-drive losses. During
light-load mode of operation, the LM76005-Q1 operates with a minimum quiescent current of 10 to 15 µA
(typical).
7.4.7 Foldback Mode
Foldback protection modes are entered when the duty cycle exceeds the minimum on- and off-times of the
device. At very high duty cycles, where the minimum off-time is not satisfied, the frequency folds back to allow
more time for the peak current command to be reached. The maximum on-time is 8 µs, which limits the
maximum duty cycle in dropout to 98%. At very low duty cycles when the minimum on-time is reached, the
device maintains regulation by dropping the frequency to allow more time for the inductor current to discharge
the output capacitor. Foldback mode is exited once the minimum on-time and off-times are satisfied.
7.4.8 Forced Pulse-Width-Modulation Mode
FPWM is employed when the FPWM pin is pulled high, or the device is synchronized to an external clock. In this
mode, diode emulation is turned off, and the device remains in CCM over the full load range. In FPWM
operation, the frequency of operation is constant and fixed unless the minimum tON or tOFF are exceeded, which
cause the device to enter foldback mode. In these cases, PWM operation is still maintained, but the frequency of
operation is folded back (reduced) to maintain proper regulation. DC accuracy is highest in FPWM mode.
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
8.1 Application Information
The LM76005-Q1 is a step-down DC-DC converter. It is typically used to convert a higher DC voltage to a lower
DC voltage with a maximum output current of 5 A. The following design procedure can be used to select
component values for the LM76005-Q1. Alternately, the WEBENCH® software may be used to generate a
complete design. The WEBENCH software uses an iterative design procedure and accesses a comprehensive
database of components when generating a design.
8.2 Typical Applications
The LM76005-Q1 only requires a few external components to convert from a wide range of supply voltages to
output voltage, as shown in 图8-1:
L
VIN
PVIN
SW
VOUT
COUT
CIN
CBOOT
PGND
CFF
RFBT
BOOT
FB
EN
VCC
RFBB
CVCC
SS/TRK
BIAS
RT
CBIAS
LM76005-Q1
PGOOD
SYNC
AGND
Tie BIAS to PGND
when VOUT < 3.3 V
图8-1. LM76005-Q1 Basic Schematic
The LM76005-Q1 also integrates a full list of features to aid system design requirements, such as the following:
• VCC UVLO
• Programmable soft start
• Start-up tracking
• Programmable switching frequency
• Clock synchronization
• Power-good indication
Each system can select the features needed in a specific application. A comprehensive schematic with all
features utilized is shown in 图8-2:
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L
VOUT
VIN
SW
PVIN
RENT
CIN
COUT
PGND
EN
CBOOT
RFBT
CFF
BOOT
FB
RENB
VCC
RFBB
CVCC
SS/TRK
RT
CSS
BIAS
LM76005-Q1
RT
CBIAS
PGOOD
PGND
SYNC
AGND
RPG
RSYNC
Tie BIAS to PGND when
VOUT < 3.3 V
图8-2. LM76005-Q1 Comprehensive Schematic
The external components must fulfill the requirements of the application, but also the stability criteria of the
device control loop. The LM76005-Q1 is optimized to work within a range of external components. Inductance
and capacitance of the LC output filter each create poles that have to be considered in the control of the
converter. For VOUT = 1 V, 3.3 V, 5V, the recommended output capacitors have been generated assuming typical
derating for 16-V, X7R, automotive grade capacitors. For VOUT = 12 V, the recommended output capacitors have
been generated assuming typical derating for 25-V, X7R, automotive grade capacitors, and for VOUT = 24 V, the
recommended output capacitors have been generated assuming typical derating for 50-V, X7R, automotive
grade capacitors. If lower voltage, nonautomotive grade, or lower temperature rated capacitors are used, more
capacitors than listed are likely to be needed.表8-1 can be used to simplify the output filter component selection.
表8-1. Typical Component Selection
fSW (kHz)
200
400
500
200
400
500
200
400
500
200
400
500
200
400
500
VOUT (V)
L (µH)
2.5
1.2
1
COUT (µF)
720
600
470
300
220
200
250
180
150
200
150
120
150
100
88
RFBT (kΩ)
100
RFBB (kΩ)
OPEN
OPEN
OPEN
43.5
43.5
43.5
25
1
1
100
1
100
3.3
3.3
3.3
5
10
100
4.7
4.7
15
100
100
100
5
6.8
5.2
22
100
25
5
100
25
12
12
12
24
24
24
100
9.09
9.09
9.09
4.37
4.37
4.37
10
100
7.2
44
100
100
22
100
15
100
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8.2.1 Design Requirements
节 8.2.2 is based on a design example. For this design example, use the parameters listed in 表 8-2 as the input
parameters.
表8-2. Design Example Parameters
DESIGN PARAMETER
VALUE
Input voltage range
Output voltage
3.5 V to 60 V
5 V
Input ripple voltage
Output ripple voltage
Output current rating
Operating frequency
400 mV
30 mV
5 A
400 kHz
8.2.2 Detailed Design Procedure
8.2.2.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the LM76005-Q1 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand board thermal performance
• Export customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
8.2.2.2 Output Voltage Setpoint
The output voltage of the LM76005-Q1 device is externally adjustable using a resistor divider network. In the
application circuit of 图 8-2, this divider network is comprised of top feedback resistor, RFBT, and bottom
feedback resistor, RFBB. Equation 12 is used to determine the output voltage of the converter:
VFB
RFBB
=
RFBT
VOUT - VFB
(12)
Choose the value of the RFBT to be around 1 MΩ to minimize quiescent current during light load operation or 100
kΩ to improve noise immunity. With the desired output voltage set to be 5 V and with a VFB = 1 V, the RFBB
value can then be calculated using Equation 12. The formula yields a value of 24.9 kΩ when RFBT = 100 kΩ.
8.2.2.3 Switching Frequency
The default switching frequency of the LM76005-Q1 device is set at 400 kHz. If the RT is left open, the
LM76005-Q1 switches at 400 kHz in CCM mode. Use Equation 13 to calculate the required value for RT to
operate the LM76005-Q1 at different frequencies.
38400
RT(kW) =
Frequency(kHz) - 14.33
(13)
The result for 400 kHz is 99.57 kΩ.
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The choice of switching frequency is a compromise between conversion efficiency and overall solution size.
Lower switching frequency implies reduced switching losses and usually results in higher system efficiency.
However, higher switching frequency allows for the use of smaller inductors and output capacitors, hence, a
more compact design. When choosing operating frequency, the most important consideration is thermal
limitations. This constraint typically dominates frequency selection. For the LM76005, the safe operating area is
controlled by the thermal performance (RθJA=18.8 °C/W); see 图8-3.
6
5
4
3
2
1
0
25
50
75 100
Ambient Temperature (°C)
125
150
lm76
图8-3. LM76005-Q1 Safe Operating Area (5 VOUT, 400 kHz, RθJA=18.8 °C/W)
8.2.2.4 Input Capacitors
The LM76005-Q1 device requires an input decoupling and, depending on the application, a bulk input capacitor.
The typical recommended value for the high frequency decoupling capacitor is 10 μF to 22 μF. TI recommends
a high-quality ceramic type X5R or X7R with sufficiency voltage rating. The voltage rating must be greater than
the maximum input voltage. To compensate the derating of ceramic capacitors, a voltage rating of twice the
maximum input voltage is recommended.
Many times, it is desirable and necessary to use an electrolytic capacitor on the input in parallel with the
ceramics. This is especially true if the LM76005-Q1 circuit is not located within approximately 5 cm from the
input voltage source. This capacitor can help damp any ringing on the input supply caused by the long power
leads and the associated inductance. The use of this additional capacitor also helps with momentary voltage
dips caused by input supplies with unusually high impedance. The optimum value for this capacitor is four times
the ceramic input capacitance with ESR close to the characteristic impedance of the LC filter formed by the
application input inductance and ceramic input capacitors.
For this design, two 4.7-μF, X7R dielectric capacitors rated for 100 V are used for the input decoupling
capacitance. A single capacitor can aslo be used that has an equivalent series resistance (ESR) of
approximately 3 mΩ, and an RMS current rating of 5 A. Include a capacitor with a value of 47 nF for high-
frequency filtering and place it as close as possible to the device pins.
Note
DC-Bias Effect: High capacitance ceramic capacitors have a DC-bias derating effect, which has a
strong influence on the final effective capacitance. Therefore, choose the right capacitor value
carefully. Package size and voltage rating in combination with dielectric material are responsible for
differences between the rated capacitor value and the effective capacitance.
8.2.2.5 Inductor Selection
The first criterion for selecting an output inductor is the inductance itself. In most buck converters, this value is
based on the desired peak-to-peak ripple current, ΔiL that flows in the inductor along with the load current. As
with switching frequency, the selection of the inductor is a tradeoff between size and cost. Higher inductance
means lower ripple current and hence lower output voltage ripple. Lower inductance results in smaller, less
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expensive devices. An inductance that gives a ripple current of 20% to 40% of the maximum output current is a
good starting point. (ΔiL = (1/5 to 2/5) × IOUT). The peak-to-peak inductor current ripple can be found by
Equation 15 and the range of inductance can be found by Equation 14 with the typical input voltage used as VIN.
(VIN - VOUT )ìD
DiL =
L ì fSW
(14)
(VIN - VOUT )ìD
0.4 ì fSW ìIL
(VIN - VOUT )ìD
0.2ì fSW ìIL
Ç L Ç
LOAD-MAX
LOAD-MAX
(15)
D is the duty cycle of the converter which in a buck converter it can be approximated as D = VOUT / VIN,
assuming no loss power conversion. By calculating in terms of amperes, volts, and megahertz, the inductance
value comes out in micro henries. The inductor ripple current ratio is defined by:
DiL
r =
IOUT
(16)
The second criterion is the inductor saturation-current rating. The inductor must be rated to handle the maximum
load current plus the ripple current:
IL-PEAK = ILOAD-MAX + ΔiL / 2
(17)
The LM76005-Q1 has both valley current limit and peak current limit. During an instantaneous short, the peak
inductor current can be high due to a momentary increase in duty cycle. The inductor current rating must be
higher than the HS current limit. TI recommends selection of an inductor with a larger core saturation margin and
preferably a softer roll off of the inductance value over load current.
In general, it is preferable to choose lower inductance in switching power supplies, because it usually
corresponds to faster transient response, smaller DCR, and reduced size for more compact designs. However,
too low of an inductance can generate too large of an inductor current ripple such that overcurrent protection at
the full load can be falsely triggered. It also generates more conduction loss because the RMS current is slightly
higher relative that with lower current ripple at the same DC current. Larger inductor current ripple also implies
larger output voltage ripple with the same output capacitors. With peak-current-mode control, it is not
recommended to have an inductor current ripple that is too small. Enough inductor current ripple improves
signal-to-noise ratio on the current comparator and makes the control loop more immune to noise.
Once the inductance is determined, the type of inductor must be selected. Ferrite designs have very low core
losses and are preferred at high switching frequencies, so design goals can concentrate on copper loss and
preventing saturation. Ferrite core material saturates hard, which means that inductance collapses abruptly
when the peak design current is exceeded. The hard saturation results in an abrupt increase in inductor ripple
current and consequent output voltage ripple. Do not allow the core to saturate.
For the design example, a standard 6.8-μH inductor from Wurth, Coiltronics, or Vishay can be used for the 5-V.
8.2.2.6 Output Capacitor Selection
The device is designed to be used with a wide variety of LC filters. TI generally recommends using as little
output capacitance as possible to keep cost and size down. Choose the output capacitor or capacitors, COUT
,
with care as it directly affects the steady-state output-voltage ripple, loop stability, and the voltage over/
undershoot during load current transients.
The output voltage ripple is essentially composed of two parts. One is caused by the inductor current ripple
going through the equivalent series resistance (ESR) of the output capacitors:
ΔVOUT-ESR = ΔiL × ESR
(18)
The other is caused by the inductor current ripple charging and discharging the output capacitors:
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ΔVOUT-C = ΔiL / (8 × fSW × COUT
)
(19)
The two components in the voltage ripple are not in phase, so the actual peak-to-peak ripple is smaller than the
sum of the two peaks.
Output capacitance is usually limited by transient performance specifications if the system requires tight voltage
regulation in the presence of large current steps and fast slew rates. When a fast large load transient happens,
output capacitors provide the required charge before the inductor current can slew to the appropriate level. The
initial output voltage step is equal to the load current step multiplied by the ESR. VOUT continues to droop until
the control loop response increases or decreases the inductor current to supply the load. To maintain a small
overshoot or undershoot during a transient, small ESR, and large capacitance are desired. But these also come
with higher cost and size. Thus, the motivation is to seek a fast control loop response to reduce the output
voltage deviation.
For a given input and output requirement, Equation 20 gives an approximation for an absolute minimum output
cap required:
2
»
…
…
ÿ
Ÿ
≈
’
÷
◊
1
r
Å
Å
COUT
>
ì
ì(1+ D ) + D ì(1+ r)
(
)
∆
∆
÷
(fSW ìr ì DVOUT / IOUT
)
12
Ÿ
⁄
«
(20)
(21)
Along with this for the same requirement, calculate the maximum ESR as per Equation 21:
D'
1
r
≈
’
ESR <
ì
+ 0.5
∆
«
÷
◊
fSW ì COUT
where
• r = ripple ratio of the inductor ripple current (ΔiL / IOUT
• ΔVO = target output voltage undershoot
• D’= 1 –duty cycle
)
• fSW = switching frequency
• IOUT = load current
A general guideline for COUT range is that COUT must be larger than the minimum required output capacitance
calculated by Equation 20. Limit the maximum value of total output capacitance to between 800 μF and 1200
μF. Large values of output capacitance can prevent the regulator from starting up correctly and adversely effect
the loop stability. If values greater than the given range are to be used, then a careful study of start-up at full load
and loop stability must be performed.
In applications with VOUT less than 3.3 V, it is critical that low ESR output capacitors are selected. This limits
potential output voltage overshoots as the input voltage falls below the device normal operating range. To
optimize the transient behavior a feedforward capacitor can be added in parallel with the upper feedback
resistor. For this design example, three 47-µF, 10-V, X7R ceramic capacitors are used in parallel.
8.2.2.7 Feedforward Capacitor
The LM76005-Q1 is internally compensated. Depending on the VOUT and frequency FS, if the output capacitor
COUT is dominated by low ESR (ceramic types) capacitors, it can result in low phase margin. To improve the
phase boost an external feedforward capacitor, CFF can be added in parallel with RFBT. CFF is chosen such that
phase margin is boosted at the crossover frequency without CFF. A simple estimation for the crossover
frequency without CFF (fx) is shown in Equation 22, assuming COUT has very small ESR.
15.46
fX
=
VOUT ì COUT
(22)
Equation 23 for CFF was tested:
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1
1
CFF
=
ì
2pfx
RFBT ì(RFBT / /RFBB
)
(23)
If capacitors with high ESR are used, CFF is not required. The CFF capacitor creates a time constant with RFBT
that couples the attenuated output voltage ripple to the FB node. Using a value that is too large for CFF can
couple too much ripple to FB node and affect output voltage regulation. For capacitors with medium ESR (20 –
200 mΩ), 方程式 23 can be used as a quick starting point. For the application in this design example, a 47-pF
C0G capacitor is used.
8.2.2.8 Bootstrap Capacitors
Every LM76005-Q1 design requires a bootstrap capacitor, CBOOT. The recommended bootstrap capacitor is 0.47
μF and rated at 6.3 V or greater. The bootstrap capacitor is located between the SW pin and the BOOT pin. The
bootstrap capacitor must be a high-quality ceramic type with X7R or X5R grade dielectric for temperature
stability.
For improved EMI performance, a boot resistor can be added in series with the bootstrap capacitor. The boot
resistor will slow down the rising edge of the switch node.
8.2.2.9 VCC Capacitors
The VCC pin is the output of an internal LDO for LM76005-Q1. The input for this LDO comes from either VIN or
BIAS (please refer to functional block diagram for LM76005-Q1). To ensure stability of the part, place a 1-µF to
2.2-µF, 10-V capacitor for this pin. Never short VCC pin to ground during operation.
8.2.2.10 BIAS Capacitors
For an output voltage of 3.3 V and greater, connect the BIAS pin to the output to increase light load efficiency.
The BIAS pin is one of the two inputs for the VCC LDO. When BIAS voltage is below VBIAS-ON threshold, the
input for the VCC LDO is internally connected to VIN. Because this is an LDO, the voltage differences between
the input and output affects the efficiency of the LDO. If necessary, a capacitor with a value of 1 μF can be
added close to the BIAS pin as an input capacitor for the LDO.
8.2.2.11 Soft-Start Capacitors
The SS pin can be left floating, and the LM76005-Q1 implements a soft-start time of 6.3 ms. To use an external
soft-start capacitor, the capacitor must be sized so that the soft-start time is greater than 6.3 ms. Use Equation
24 to calculate the soft-start capacitor value:
CSS = ISSC × tSS
(24)
With a desired soft-start time of 11 ms, a soft-start charging current of 2 µA, and an internal VREF of 1 V,
Equation 24 yields a soft-start capacitor value of 22 nF.
8.2.2.12 Undervoltage Lockout Setpoint
The undervoltage lockout (UVLO) is adjusted using the external voltage divider network of RENT and RENB. RENT
is connected between the PVIN pin and the EN pin of the LM76005-Q1. RENB is connected between the EN pin
and the GND pin. The UVLO has two thresholds, one for power up when the input voltage is rising and one for
power down or brownouts when the input voltage is falling. Equation 25 can be used to determine the VIN UVLO
level.
VIN-UVLO-RISING = VENH × (RENB + RENT) / RENB
(25)
The EN rising threshold (VENH) for LM76005-Q1 is set to be 1.204 V (typical). Choose the value of RENB to be
100 kΩ to minimize input current from the supply. If the desired VIN UVLO level is at 5 V, then the value of RENT
can be calculated using Equation 26:
RENT = (VIN-UVLO-RISING / VENH –1) × RENB
(26)
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Equation 26 yields a value of 315 kΩ. The resulting falling UVLO threshold, can be calculated by Equation 27,
where EN falling threshold (VENL) is 1.05 V (typical).
VIN-UVLO-FALLING = VENL × (RENB + RENT) / RENB
(27)
8.2.2.13 PGOOD
A typical pullup resistor value is 10 kΩ to 100 kΩ from the PGOOD pin to a voltage no higher than 18 V. If it is
desired to pull up the PGOOD pin to a voltage higher than 18 V, a resistor can be added from the PGOOD pin to
ground to divide the voltage detected by the PGOOD pin to a value no higher than 18 V.
8.2.2.14 Synchronization
The LM76005-Q1 switching action can synchronize to an external clock from 200 kHz to 500 kHz. TI
recommends connecting an external clock to the SYNC pin with a 50-Ω to 100-Ω termination resistor. Ground
the SYNC pin if not used.
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8.2.3 Application Curves
Unless otherwise specified the following conditions apply:
100
95
90
85
80
75
70
5.2
5.16
5.12
5.08
5.04
5
4.96
4.92
4.88
4.84
4.8
65
60
VIN = 12 V
VIN = 24 V
VIN = 12 V
VIN = 24 V
0.001
0.01 0.02 0.05 0.1 0.2
Load Current (A)
0.5
1
2
3 45
0
0.5
1
1.5
2
2.5
Load Current (A)
3
3.5
4
4.5
5
Quik
Quik
VOUT = 5 V
fSW = 400 kHz
Auto Mode
VOUT = 5 V
fSW = 400 kHz
Auto Mode
图8-4. LM76005-Q1 Efficiency
图8-5. LM76005-Q1 Load and Line Regulation
5.6
5.4
5.2
5
5E+5
4.5E+5
4E+5
3.5E+5
3E+5
4.8
4.6
4.4
4.2
4
2.5E+5
2E+5
1.5E+5
1E+5
ILOAD = 2.5 A
ILOAD = 5 A
ILOAD = 2.5 A
ILOAD = 5 A
5E+4
0
3.8
4.5
5
5.5
Input Voltage (V)
6
6.5
5
5.5
6
Input Voltage (V)
6.5
7
drop
drop
VOUT = 5 V
fSW = 400 kHz
FPWM Mode
VOUT = 5 V
fSW = 400 kHz
FPWM Mode
图8-6. LM76005-Q1 Voltage Dropout
图8-7. LM76005-Q1 Frequency Dropout
VSW
(5 V/DIV)
VSW
(10 V/DIV)
IINDUCTOR
IINDUCTOR
(500 mA/
DIV)
(500 mA/
DIV)
VOUT
VOUT
(20 mV/DIV)
(20 mV/DIV)
Time (4 ms/DIV)
Time (4 ms/DIV)
VIN = 12 V
No Load
VOUT = 5 V
fSW = 400 kHz
Auto Mode
VIN = 24 V
No Load
VOUT = 5 V
fSW = 400 kHz
Auto Mode
图8-8. LM76005-Q1 Switching Waveform and
图8-9. LM76005-Q1 Switching Waveform and
Output Ripple
Output Ripple
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VSW
VSW
(5 V/DIV)
(10 V/DIV)
IINDUCTOR
IINDUCTOR
(500 mA/
DIV)
(500 mA/
DIV)
VOUT
VOUT
(20 mV/DIV)
(20 mV/DIV)
Time (2 µs/DIV)
Time (2 µs/DIV)
VIN = 12 V
No Load
VOUT = 5 V
fSW = 400 kHz
FPWM Mode
VIN = 24 V
No Load
VOUT = 5 V
fSW = 400 kHz
FPWM Mode
图8-10. LM76005-Q1 Switching Waveform and
图8-11. LM76005-Q1 Switching Waveform and
Output Ripple
Output Ripple
VSW
VSW
(5 V/DIV)
(10 V/DIV)
IINDUCTOR
IINDUCTOR
(500 mA/
DIV)
(500 mA/
DIV)
VOUT
VOUT
(20 mV/DIV)
(20 mV/DIV)
Time (4 µs/DIV)
Time (4 µs/DIV)
VIN = 12 V
VOUT = 5 V
fSW = 400 kHz
Auto Mode
VIN = 24 V
VOUT = 5 V
fSW = 400 kHz
Auto Mode
100-mA Load
100-mA Load
图8-12. LM76005-Q1 Switching Waveform and
图8-13. LM76005-Q1 Switching Waveform and
Output Ripple
Output Ripple
VSW
VSW
(5 V/DIV)
(10 V/DIV)
IINDUCTOR
IINDUCTOR
(500 mA/
DIV)
(500 mA/
DIV)
VOUT
VOUT
(20 mV/DIV)
(20 mV/DIV)
Time (2 µs/DIV)
Time (2 µs/DIV)
VIN = 12 V
VOUT = 5 V
fSW = 400 kHz
FPWM Mode
VIN = 24 V
VOUT = 5 V
fSW = 400 kHz
FPWM Mode
100-mA Load
100-mA Load
图8-14. LM76005-Q1 Switching Waveform and
图8-15. LM76005-Q1 Switching Waveform and
Output Ripple
Output Ripple
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Enable
(2 V/DIV)
Enable
(2 V/DIV)
VOUT
(2 V/DIV)
VOUT
(2 V/DIV)
PGOOD
(2 V/DIV)
PGOOD
(2 V/DIV)
IINDUCTOR
IINDUCTOR
(2 A/DIV)
(2 A/DIV)
Time (4 ms/DIV)
Time (4 ms/DIV)
VIN = 12 V
No Load
VOUT = 5 V
fSW = 400 kHz
Auto Mode
VIN = 24 V
No Load
VOUT = 5 V
fSW = 400 kHz
Auto Mode
图8-16. LM76005-Q1 Start-up Waveform
图8-17. LM76005-Q1 Start-up Waveform
Enable
(2 V/DIV)
Enable
(2 V/DIV)
VOUT
(2 V/DIV)
VOUT
(2 V/DIV)
PGOOD
(2 V/DIV)
PGOOD
(2 V/DIV)
IINDUCTOR
IINDUCTOR
(2 A/DIV)
(2 A/DIV)
Time (4 ms/DIV)
Time (4 ms/DIV)
VIN = 12 V
No Load
VOUT = 5 V
fSW = 400 kHz
FPWM Mode
VIN = 24 V
No Load
VOUT = 5 V
fSW = 400 kHz
FPWM Mode
图8-18. LM76005-Q1 Start-up Waveform
图8-19. LM76005-Q1 Start-up Waveform
Enable
(2 V/DIV)
Enable
(2 V/DIV)
VOUT
(2 V/DIV)
VOUT
(2 V/DIV)
PGOOD
(2 V/DIV)
PGOOD
(2 V/DIV)
IINDUCTOR
IINDUCTOR
(5 A/DIV)
(5 A/DIV)
Time (4 ms/DIV)
Time (4 ms/DIV)
VIN = 12 V
5-A Load
VOUT = 5 V
fSW = 400 kHz
VIN = 24V
5-A Load
VOUT = 5 V
fSW = 400 kHz
图8-20. LM76005-Q1 Start-up Waveform
图8-21. LM76005-Q1 Start-up Waveform
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Enable
(2 V/DIV)
Enable
(2 V/DIV)
VOUT
(2 V/DIV)
VOUT
(2 V/DIV)
PGOOD
(2 V/DIV)
PGOOD
(2 V/DIV)
IINDUCTOR
IINDUCTOR
(2 A/DIV)
(2 A/DIV)
Time (4 ms/DIV)
Time (4 ms/DIV)
VIN = 12 V
No Load
VOUT = 5 V
fSW = 400 kHz
Auto Mode
VIN = 24V
No Load
VOUT = 5 V
fSW = 400 kHz
Auto Mode
图8-22. LM76005-Q1 Start-up With Pre-Biased
图8-23. LM76005-Q1 Start-up With Pre-Biased
Output
Output
VOUT
VOUT
(1 V/DIV)
(1 V/DIV)
IINDUCTOR
IINDUCTOR
(2 A/DIV)
(2 A/DIV)
VSW
VSW
(5 V/DIV)
(10 V/DIV)
Time (40 ms/DIV)
Time (40 ms/DIV)
VIN = 12 V
VOUT = 5 V
fSW = 400 kHz
Auto Mode
VIN = 24 V
VOUT = 5 V
fSW = 400 kHz
Auto Mode
图8-24. LM76005-Q1 Short-Circuit Behavior With
图8-25. LM76005-Q1 Short-Circuit Behavior With
Hiccup
Hiccup
LW_PK5
VHF1-PK5
MW_PK5
VHF2-PK5 FM-PK5
TVI-PK5
SW PK5
SW AV5
LW_AV5
CB_PK5
CB_AV5
MW_AV5
VHF1-AV5
TVI-AV5
VHF2-AV5
FM-AV5
Peak Limit
Average Limit
Peak Value
Average Value
Peak Limit
Average Limit
Peak Value
Average Value
VIN = 13.5 V
VOUT = 5 V
fSW = 400 kHz
IOUT = 3.5 A
VIN = 13.5 V
VOUT = 5 V
fSW = 400 kHz
IOUT = 3.5 A
CFLT = 4 × 2.2 µF, LFLT = 1 µH
CFLT = 4 × 2.2 µF, LFLT = 1 µH
图8-27. LM76005-Q1 Conducted EMI Result vs.
图8-26. LM76005-Q1 Conducted EMI Result vs.
CISPR25 Limits - High Frequency
CISPR25 Limits - Low Frequency
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50
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
Peak_Limit
Peak_Limit
Peak detector _Horizontal_Log
Peak detector _Vertical_Log
Peak detector _Horizontal_Bicon
Peak detector _Vertical_Bicon
0
200
300
400
500
600
700
800
900
1000
30
40
50
60
70
80
90 100 110 120 130 140 150 160 170 180 190 200
Frequency (MHz)
Frequency (MHz)
VIN = 13.5 V
VOUT = 5 V
fSW = 400 kHz
IOUT = 3.5 A
VIN = 13.5 V
CFLT = 4 × 2.2 µF,
LFLT = 1 µH
VOUT = 5 V
fSW = 400 kHz
IOUT = 3.5 A
CFLT = 4 × 2.2 µF,
LFLT = 1 µH
图8-29. LM76005-Q1 Radiated EMI Result vs.
图8-28. LM76005-Q1 Radiated EMI Result vs.
CISPR25 Limits - High Frequency
CISPR25 Limits - Low Frequency
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9 Power Supply Recommendations
The LM76005-Q1 is designed to operate from an input voltage supply range between 3.5 V and 60 V. This input
supply must be able to withstand the maximum input current and maintain a voltage above 3.5 V. The resistance
of the input supply rail must be low enough that an input current transient does not cause a high enough drop at
the LM76005-Q1 supply voltage that can cause a false UVLO fault triggering and system reset.
If the input supply is located more than a few inches from the LM76005-Q1, additional bulk capacitance can be
required in addition to the ceramic bypass capacitors. The amount of bulk capacitance is not critical, but a 47-µF
or 100-µF electrolytic capacitor is a typical choice.
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10 Layout
10.1 Layout Guidelines
The performance of any switching converter depends as much upon the layout of the PCB as the component
selection. The following guidelines will help the user design a circuit with maximum rejection of outside EMI and
minimum generation of unwanted EMI.
1. Place ceramic high frequency bypass CIN as close as possible to the LM76005-Q1 PVIN and PGND pins.
Grounding for both the input and output capacitors must consist of localized top-side planes that connect to
the PGND pins and PAD.
2. Place bypass capacitors for VCC and BIAS close to the pins and ground the bypass capacitors to device
ground.
3. Minimize trace length to the FB pin. Both feedback resistors, RFBT and RFBB, must be located close to the FB
pin. Place CFF directly in parallel with RFBT. If VOUT accuracy at the load is important, make sure VOUT sense
is made at the load. Route the VOUT sense path away from noisy nodes and preferably through a layer on
the other side of a shielding layer.
4. Use ground plane in one of the middle layers as noise shielding and heat dissipation path. Have a single
point ground connection to the plane. Route the ground connections for the feedback, soft start, and enable
components to the ground plane. This prevents any switched or load currents from flowing in the analog
ground traces. If not properly handled, poor grounding can result in degraded load regulation or erratic
output voltage ripple behavior.
5. Make VIN, VOUT and ground bus connections as wide as possible. This reduces any voltage drops on the
input or output paths of the converter and maximizes efficiency.
6. Provide adequate device heat-sinking. Use an array of heat-sinking vias to connect the exposed pad to the
ground plane on the bottom PCB layer. If the PCB has multiple copper layers, these thermal vias can also be
connected to inner layer heat-spreading ground planes. Ensure enough copper area is used for heat-sinking
to keep the junction temperature below 125°C.
10.1.1 Layout Highlights
1. Minimize the area of switched current loops. From an EMI reduction standpoint, it is imperative to minimize
the high di/dt paths during PC board layout as shown in the figure above. The high current loops that do not
overlap have high di/dt content that causes observable high frequency noise on the output pin if the input
capacitor CIN is placed at a distance away from the LM76005-Q1. Therefore, place CIN as close as possible
to the LM76005-Q1 PVIN and PGND pins. This minimizes the high di/dt area and reduce radiated EMI.
Additionally, grounding for both the input and output capacitor must consist of a localized top-side plane that
connects to the PGND pin.
2. Have a single point ground. The ground connections for the feedback, soft-start, and enable components
must be routed to the AGND pin of the device. This prevents any switched or load currents from flowing in
the analog ground traces. If not properly handled, poor grounding can result in degraded load regulation or
erratic output voltage ripple behavior.
3. Minimize trace length to the FB pin net. Place both feedback resistors, RFBT and RFBB, close to the FB pin.
Because the FB node is high impedance, maintain the copper area as small as possible. Route the traces
from RFBT, RFBB away from the body of the LM76005-Q1 to minimize possible noise pickup. Place Cff directly
in parallel with RFBT
.
4. Make input and output bus connections as wide as possible. This reduces any voltage drops on the input or
output of the converter and maximizes efficiency. To optimize voltage accuracy at the load, ensure that a
separate feedback voltage sense trace is made to the load. Doing so corrects for voltage drops and provide
optimum output accuracy.
5. Provide adequate device heat-sinking. Use an array of heat-sinking vias to connect the exposed pad to the
ground plane on the bottom PCB layer. If the PCB has multiple copper layers, these thermal vias can also be
connected to inner layer heat-spreading ground planes. For best results use a 10 × 10 via array (or greater)
with a minimum via diameter of 12 mil thermal vias spaced 46.8 mil apart. Ensure enough copper area is
used for heat-sinking to keep the junction temperature below 125°C.
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10.1.2 Compact Layout for EMI Reduction
Radiated EMI is generated by the high di/dt components in pulsing currents in switching converters. The larger
the area covered by the path of a pulsing current, the more electromagnetic emission is generated. The key to
minimize radiated EMI is to identify the pulsing current path and minimize the area of the path. In buck
converters, the pulsing current path is from the VIN side of the input capacitors to HS switch, to the LS switch,
and then return to the ground of the input capacitors, as shown in 图10-1.
BUCK
CONVERTER
L
PVIN
VIN
CIN
SW
VOUT
COUT
PGND
PGND
High di/dt current
图10-1. Buck Converter High di / dt Path
High frequency ceramic bypass capacitors at the input side provide primary path for the high di/dt components of
the pulsing current. Placing ceramic bypass capacitor or capacitors as close as possible to the PVIN and PGND
pins is the key to EMI reduction. The SW pin connecting to the inductor must be as short as possible, and just
wide enough to carry the load current without excessive heating. Short, thick traces or copper pours (shapes)
must be used for high current conduction path to minimize parasitic resistance. The output capacitors must be
placed close to the VOUT end of the inductor and closely grounded to PGND pin and exposed PAD. Place the
bypass capacitors on VCC and BIAS pins as close as possible to the pins respectively and closely grounded to
PGND and the exposed PAD.
10.1.3 Ground Plane and Thermal Considerations
TI recommends using one of the middle layers as a solid ground plane. Ground plane provides shielding for
sensitive circuits and traces. It also provides a quiet reference potential for the control circuitry. Connect the
AGND and PGND pins to the ground plane using vias right next to the bypass capacitors. PGND pins are
connected to the source of the internal LS switch; connect the PGND pins directly to the grounds of the input
and output capacitors. The PGND net contains noise at the switching frequency and can bounce due to load
variations. The PGND trace, as well as PVIN and SW traces, must be constrained to one side of the ground
plane. The other side of the ground plane contains much less noise —use for sensitive routes.
Provide adequate device heat sinking by utilizing the PAD of the device as the primary thermal path. Use a
minimum 4 x 4 array of 10-mil thermal vias to connect the PAD to the system ground plane for heat sinking.
Distribute the vias evenly under the PAD. Use as much copper as possible for system ground plane on the top
and bottom layers for the best heat dissipation. TI recommends using a four-layer board with the copper
thickness, for the four layers, starting from the top one, 2 oz / 1 oz / 1 oz / 2 oz. Four layer boards with enough
copper thickness and proper layout provides low current conduction impedance, proper shielding and lower
thermal resistance.
The thermal characteristics of the LM76005-Q1 are specified using the parameter RθJA, which characterize the
junction temperature of the silicon to the ambient temperature in a specific system. Although the value of RθJA is
dependant on many variables, it still can be used to approximate the operating junction temperature of the
device.
To obtain an estimate of the device junction temperature, you can use the following relationship:
TJ = PD × RθJA + TA
(28)
where
• TJ = junction temperature in °C
• PD = VIN × IIN × (1 − efficiency) − (1.1 × (IOUT)2× DCR)
• DCR = inductor DC parasitic resistance in Ω
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• RθJA = junction-to-ambient thermal resistance of the device in °C/W
• TA = ambient temperature in °C.
The maximum operating junction temperature of the LM76005-Q1 is 125°C. RθJA is highly related to PCB size
and layout, as well as environmental factors such as heat sinking and air flow. 图 10-2 shows measured results
of RθJA with different copper area on a 2-layer board and a 4-layer board.
30
1W @0 fpm - 2layer
28
1W @0 fpm - 4layer
26
2W @0 fpm - 2layer
2W @0 fpm - 4layer
24
22
20
18
16
14
12
10
30mm × 30mm
40mm × 40mm
50mm × 50mm
70mm ×70mm
Copper Area
图10-2. Measured RθJA versus PCB Copper Area on a 2-Layer Board and a 4-Layer Board
10.1.4 Feedback Resistors
To reduce noise sensitivity of the output voltage feedback path, it is important to place the resistor divider and
CFF close to the FB pin, rather than close to the load. The FB pin is the input to the error amplifier, so it is a high
impedance node and very sensitive to noise. Placing the resistor divider and CFF closer to the FB pin reduces
the trace length of FB signal and reduces noise coupling. The output node is a low impedance node, so the trace
from VOUT to the resistor divider can be long if short path is not available.
If voltage accuracy at the load is important, make sure voltage sense is made at the load. Doing so corrects for
voltage drops along the traces and provide the best output accuracy. The voltage sense trace from the load to
the feedback resistor divider must be routed away from the SW node path, the inductor, and VIN path to avoid
contaminating the feedback signal with switch noise, while also minimizing the trace length. This is most
important when high value resistors are used to set the output voltage. TI recommends routing the voltage sense
trace on a different layer than the inductor, SW node, and VIN path, such that there is a ground plane in between
the feedback trace and inductor / SW node / VIN polygon. This provides further shielding for the voltage
feedback path from switching noises.
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10.2 Layout Example
图10-3. LM76005-Q1 Layout
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
11.1.1.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the LM76005-Q1 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand board thermal performance
• Export customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
TI E2E™ are trademarks of Texas Instruments.
WEBENCH® is a registered trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.6 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
17-Dec-2022
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
LM76005QRNPRQ1
ACTIVE
WQFN
RNP
30
3000 RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
LM76005R
NPQ1
Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
17-Dec-2022
OTHER QUALIFIED VERSIONS OF LM76005-Q1 :
Catalog : LM76005
•
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
•
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
13-Jul-2023
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM76005QRNPRQ1
WQFN
RNP
30
3000
330.0
12.4
4.3
6.3
1.1
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
13-Jul-2023
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
WQFN RNP 30
SPQ
Length (mm) Width (mm) Height (mm)
367.0 367.0 35.0
LM76005QRNPRQ1
3000
Pack Materials-Page 2
GENERIC PACKAGE VIEW
RNP 30
4 x 6, 0.5 mm pitch
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4225831/A
www.ti.com
PACKAGE OUTLINE
RNP0030B
WQFN - 0.8 mm max height
S
C
A
L
E
2
.
7
0
0
PLASTIC QUAD FLATPACK - NO LEAD
4.1
3.9
B
A
PIN 1 INDEX AREA
6.1
5.9
0.1 MIN
(0.05)
E
SCAL
C
T
SECTION A-A
TYPICAL
0.8 MAX
C
SEATING PLANE
0.08 C
0.05
0.00
1.8 0.1
2X 1.5
(0.2) TYP
EXPOSED
THERMAL PAD
12
15
26X 0.5
11
16
SYMM
31
A
A
2X
5
4.5 0.1
1
26
0.3
30
27
30X
PIN 1 ID
(OPTIONAL)
0.2
0.1
0.05
SYMM
0.5
0.3
8X
C A B
C
0.65
0.45
22X
4222784/B 09/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
RNP0030B
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(1.8)
SYMM
8X (0.6)
30
27
22X (0.75)
1
26
30X (0.25)
(0.5) TYP
SYMM
(1.14)
TYP
31
(5.8)
(4.5)
(0.57)
(R0.05) TYP
(
0.2) TYP
VIA
16
11
12
(0.65) TYP
15
(3.65)
LAND PATTERN EXAMPLE
SCALE:15X
0.07 MAX
ALL AROUND
0.07 MIN
ALL AROUND
SOLDER MASK
OPENING
METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4222784/B 09/2017
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
RNP0030B
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
8X (0.8)
27
8X (0.6)
30
22X (0.75)
1
26
31
30X (0.25)
8X
(0.94)
26X (0.5)
SYMM
(5.8)
(0.57)
TYP
(1.14)
TYP
METAL
TYP
16
11
(R0.05) TYP
12
15
SYMM
(0.5) TYP
(3.65)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 31:
74.3% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:20X
4222784/B 09/2017
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
PACKAGE OUTLINE
RNP0030E
WQFN - 0.8 mm max height
S
C
A
L
E
2
.
7
0
0
PLASTIC QUAD FLATPACK - NO LEAD
4.1
3.9
B
A
PIN 1 INDEX AREA
6.1
5.9
0.1 MIN
(0.13)
E
SCAL
C
T
SECTION A-A
TYPICAL
0.8
0.7
C
SEATING PLANE
0.08 C
0.05
0.00
1.8 0.1
2X 1.5
(0.2) TYP
EXPOSED
THERMAL PAD
12
15
26X 0.5
11
16
(0.16)
SYMM
31
A
A
2X
5
4.5 0.1
1
26
0.3
0.2
0.1
30
27
30X
PIN 1 ID
(OPTIONAL)
SYMM
0.5
0.3
C A B
8X
0.05
C
0.65
0.45
22X
4227136/A 10/2021
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
RNP0030E
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(1.8)
SYMM
8X (0.6)
30
27
22X (0.75)
1
26
30X (0.25)
(0.5) TYP
SYMM
(1.14)
TYP
31
(5.8)
(4.5)
(0.57)
(R0.05) TYP
(
0.2) TYP
VIA
16
11
12
(0.65) TYP
15
(3.65)
LAND PATTERN EXAMPLE
SCALE:15X
0.07 MAX
ALL AROUND
0.07 MIN
ALL AROUND
SOLDER MASK
OPENING
METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4227136/A 10/2021
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
RNP0030E
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
8X (0.8)
27
8X (0.6)
30
22X (0.75)
1
26
31
30X (0.25)
8X
(0.94)
26X (0.5)
SYMM
(5.8)
(0.57)
TYP
(1.14)
TYP
METAL
TYP
16
11
(R0.05) TYP
12
15
SYMM
(0.5) TYP
(3.65)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 31:
74.3% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:20X
4227136/A 10/2021
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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