LMC6061IMX/NOPB [TI]
精密 CMOS 单路微功耗运算放大器 | D | 8 | -40 to 85;型号: | LMC6061IMX/NOPB |
厂家: | TEXAS INSTRUMENTS |
描述: | 精密 CMOS 单路微功耗运算放大器 | D | 8 | -40 to 85 放大器 光电二极管 运算放大器 |
文件: | 总24页 (文件大小:1346K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LMC6061
www.ti.com
SNOS648D –NOVEMBER 1994–REVISED MARCH 2013
PRECISION CMOS SINGLE MICROPOWER OPERATIONAL AMPLIFIER
Check for Samples: LMC6061
1
FEATURES
DESCRIPTION
The LMC6061 is a precision single low offset voltage,
micropower operational amplifier, capable of
precision single supply operation. Performance
characteristics include ultra low input bias current,
high voltage gain, rail-to-rail output swing, and an
input common mode voltage range that includes
ground. These features, plus its low power
consumption, make the LMC6061 ideally suited for
battery powered applications.
2
(Typical Unless Otherwise Noted)
•
•
•
•
•
Low Offset Voltage: 100 µV
Ultra Low Supply Current: 20 μA
Operates From 4.5V to 15V Single Supply
Ultra Low Input Bias Current: 10 fA
Output Swing Within 10 mV of Supply Rail,
100k Load
Input Common-mode Range Includes V−
•
•
•
Other applications using the LMC6061 include
precision full-wave rectifiers, integrators, references,
sample-and-hold circuits, and true instrumentation
amplifiers.
High Voltage Gain: 140 dB
Improved Latchup Immunity
APPLICATIONS
This device is built with TI's advanced double-Poly
Silicon-Gate CMOS process.
•
•
•
•
•
•
•
Instrumentation Amplifier
For designs that require higher speed, see the
LMC6081 precision single operational amplifier.
Photodiode and Infrared Detector Preamplifier
Transducer Amplifiers
For a dual or quad operational amplifier with similar
features, see the LMC6062 or LMC6064 respectively.
Hand-held Analytic Instruments
Medical Instrumentation
PATENT PENDING
D/A Converter
Charge Amplifier for Piezoelectric Transducers
Connection Diagrams
Figure 1. 8-Pin PDIP/SOIC
Top View
Figure 2. Distribution of LMC6061 Input Offset
Voltage (TA = +25°C)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1994–2013, Texas Instruments Incorporated
LMC6061
SNOS648D –NOVEMBER 1994–REVISED MARCH 2013
www.ti.com
Absolute Maximum Ratings(1)(2)(3)
Differential Input Voltage
±Supply Voltage
(V+) +0.3V,
(V−) −0.3V
16V
Voltage at Input/Output Pin
Supply Voltage (V+ − V−)
Output Short Circuit to V+
See(4)
Output Short Circuit to V−
See(5)
Lead Temperature (Soldering, 10 sec.)
Storage Temp. Range
Junction Temperature
−65°C to +150°C
150°C
ESD Tolerance(6)
2 kV
Current at Input Pin
Current at Output Pin
Current at Power Supply Pin
Power Dissipation
±10 mA
±30 mA
40 mA
See(7)
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(3) For specified Military Temperature Range parameters see RETSMC6061X.
(4) Do not connect output to V+, when V+ is greater than 13V or reliability witll be adversely affected.
(5) Applies to both single-supply and split-supply operation. Continous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of ±30 mA over long term may adversely
affect reliability.
(6) Human body model, 1.5 kΩ in series with 100 pF.
(7) The maximum power dissipation is a function of TJ(Max), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(Max) − TA)/θJA
.
Operating Ratings(1)
Temperature Range
LMC6061AM
−55°C ≤ TJ ≤ +125°C
−40°C ≤ TJ ≤ +85°C
4.5V ≤ V+ ≤ 15.5V
115°C/W
LMC6061AI, LMC6082I
Supply Voltage
(2)
Thermal Resistance (θJA
)
P0008E Package, 8-Pin PDIP
D0008A Package, 8-Pin SOIC
193°C/W
Power Dissipation
See(3)
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
(2) All numbers apply for packages soldered directly into a PC board.
(3) For operating at elevated temperatures the device must be derated based on the thermal resistance θJA with PD = (TJ–TA)/θJA
.
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SNOS648D –NOVEMBER 1994–REVISED MARCH 2013
DC Electrical Characteristics
Unless otherwise specified, all limits ensured for TJ = 25°C. Boldface limits apply at the temperature extremes. V+ = 5V, V− =
0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.
LMC6061AM
Limit(2)
350
LMC6061AI
Limit(2)
350
LMC6061I
Limit(2)
800
Symbol
Parameter
Conditions
Typ(1)
Units
VOS
Input Offset Voltage
100
μV
1200
900
1300
Max
TCVOS
IB
Input Offset Voltage
Average Drift
1.0
μV/°C
Input Bias Current
Input Offset Current
Input Resistance
0.010
pA
Max
pA
100
100
4
2
4
2
IOS
0.005
Max
Tera Ω
dB
RIN
>10
85
CMRR
Common Mode Rejection 0V ≤ VCM ≤ 12.0V
Ratio
75
70
75
72
66
63
V+ = 15V
Min
dB
+PSRR
−PSRR
VCM
Positive Power Supply
Rejection Ratio
5V ≤ V+ ≤ 15V
VO = 2.5V
85
100
75
75
66
70
72
63
Min
dB
Negative Power Supply
Rejection Ratio
0V ≤ V− ≤ −10V
84
84
74
70
81
71
Min
V
Input Common-Mode
Voltage Range
V+ = 5V and 15V
for CMRR ≥ 60 dB
−0.4
−0.1
0
−0.1
0
−0.1
0
Max
V
V+ − 1.9
4000
3000
3000
2000
V+ − 2.3
V+ − 2.6
400
200
180
70
V+ − 2.3
V+ − 2.5
400
300
180
100
400
150
100
50
V+ − 2.3
V+ − 2.5
300
200
90
Min
V/mV
Min
V/mV
Min
V/mV
Min
V/mV
Min
AV
Large Signal Voltage Gain RL = 100 kΩ(3)
Sourcing
Sinking
60
RL = 25 kΩ(3)
Sourcing
Sinking
400
150
100
35
200
80
70
35
(1) For operating at elevated temperatures the device must be derated based on the thermal resistance θJA with PD = (TJ–TA)/θJA
(2) All limits are specified by testing or statistical analysis.
(3) V+ = 15V, VCM = 7.5V and RL connected to 7.5V. For Sourcing tests, 7.5V ≤ VO ≤ 11.5V. For Sinking tests, 2.5V ≤ VO ≤ 7.5V.
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DC Electrical Characteristics (continued)
Unless otherwise specified, all limits ensured for TJ = 25°C. Boldface limits apply at the temperature extremes. V+ = 5V, V− =
0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.
LMC6061AM
Limit(2)
4.990
4.970
0.010
0.030
4.975
4.955
0.020
0.045
14.975
14.955
0.025
0.050
14.900
14.800
0.050
0.200
16
LMC6061AI
Limit(2)
4.990
4.980
0.010
0.020
4.975
4.965
0.020
0.035
14.975
14.965
0.025
0.035
14.900
14.850
0.050
0.150
16
LMC6061I
Limit(2)
4.950
4.925
0.050
0.075
4.950
4.850
0.050
0.150
14.950
14.925
0.050
0.075
14.850
14.800
0.100
0.200
13
Symbol
VO
Parameter
Output Swing
Conditions
Typ(1)
Units
V+ = 5V
4.995
V
Min
V
RL = 100 kΩ to 2.5V
0.005
4.990
0.010
14.990
0.010
14.965
0.025
22
Max
V
V+ = 5V
RL = 25 kΩ to 2.5V
Min
V
Max
V
V+ = 15V
RL = 100 kΩ to 7.5V
Min
V
Max
V
V+ = 15V
RL = 25 kΩ to 7.5V
Min
V
Max
mA
Min
mA
Min
mA
Min
mA
Min
μA
IO
IO
IS
Output Current
V+ = 5V
Sourcing, VO = 0V
Sinking, VO = 5V
8
10
8
21
16
16
16
7
8
8
Output Current
V+ = 15V
Sourcing, VO = 0V
Sinking, VO = 13V(4)
V+ = +5V, VO = 1.5V
V+ = +15V, VO = 7.5V
25
15
15
15
9
10
10
26
20
20
20
7
8
8
Supply Current
20
24
24
32
35
32
40
Max
μA
24
30
30
40
40
38
48
Max
(4) Do not connect output to V+, when V+ is greater than 13V or reliability witll be adversely affected.
AC Electrical Characteristics
Unless otherwise specified, all limits ensured for TJ = 25°C, Boldface limits apply at the temperature extremes. V+ = 5V, V− =
0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.
LMC6061AM LMC6061AI LMC6061I
Symbol
Parameter
Conditions
Typ(1)
Units
Limit(2)
Limit(2)
Limit(2)
SR
Slew Rate
See(3)
35
20
20
15
V/ms
Min
8
10
7
GBW
θm
en
Gain-Bandwidth Product
Phase Margin
100
50
kHz
Deg
Input-Referred Voltage Noise
Input-Referred Current Noise
F = 1 kHz
F = 1 kHz
83
nV/√Hz
pA/√Hz
in
0.0002
(1) Typical values represent the most likely parametric norm.
(2) All limits are specified by testing or statistical analysis.
(3) V+ = 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
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AC Electrical Characteristics (continued)
Unless otherwise specified, all limits ensured for TJ = 25°C, Boldface limits apply at the temperature extremes. V+ = 5V, V− =
0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.
LMC6061AM LMC6061AI LMC6061I
Symbol
Parameter
Conditions
Typ(1)
Units
Limit(2)
Limit(2)
Limit(2)
T.H.D.
Total Harmonic Distortion
F = 1 kHz, AV = −5
RL = 100 kΩ, VO = 2 VPP
±5V Supply
0.01
%
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SNOS648D –NOVEMBER 1994–REVISED MARCH 2013
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Typical Performance Characteristics
VS = ±7.5V, TA = 25°C, Unless otherwise specified
Distribution of LMC6061
Input Offset Voltage
(TA = +25°C)
Distribution of LMC6061
Input Offset Voltage
(TA = −55°C)
Figure 3.
Figure 4.
Distribution of LMC6061
Input Offset Voltage
(TA = +125°C)
Input Bias Current
vs Temperature
Figure 5.
Figure 6.
Supply Current
vs Supply Voltage
Input Voltage
vs Output Voltage
Figure 7.
Figure 8.
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Typical Performance Characteristics (continued)
VS = ±7.5V, TA = 25°C, Unless otherwise specified
Power Supply Rejection
Common Mode
Rejection Ratio
vs Frequency
Ratio
vs
Frequency
Figure 9.
Figure 10.
Input Voltage Noise
vs Frequency
Output Characteristics
Sourcing Current
Figure 11.
Figure 12.
Gain and Phase Response
vs Temperature
Output Characteristics
Sinking Current
(−55°C to +125°C)
Figure 13.
Figure 14.
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Typical Performance Characteristics (continued)
VS = ±7.5V, TA = 25°C, Unless otherwise specified
Gain and Phase
Gain and Phase
Response
Response
vs
vs
Capacitive Load
with RL = 20 kΩ
Capacitive Load
with RL = 500 kΩ
Figure 15.
Figure 16.
Open Loop
Frequency Response
Inverting Small Signal
Pulse Response
Figure 17.
Figure 18.
Inverting Large Signal
Pulse Response
Non-Inverting Small
Signal Pulse Response
Figure 19.
Figure 20.
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SNOS648D –NOVEMBER 1994–REVISED MARCH 2013
Typical Performance Characteristics (continued)
VS = ±7.5V, TA = 25°C, Unless otherwise specified
Stability
vs
Capacitive
Load, RL = 20 kΩ
Non-Inverting Large
Signal Pulse Response
Figure 21.
Figure 22.
Stability
vs
Capacitive
Load RL = 1 MΩ
Figure 23.
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LMC6061
SNOS648D –NOVEMBER 1994–REVISED MARCH 2013
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APPLICATIONS HINTS
Amplifier Topology
The LMC6061 incorporates a novel op-amp design topology that enables it to maintain rail-to-rail output swing
even when driving a large load. Instead of relying on a push-pull unity gain output buffer stage, the output stage
is taken directly from the internal integrator, which provides both low output impedance and large gain. Special
feed-forward compensation design techniques are incorporated to maintain stability over a wider range of
operating conditions than traditional micropower op-amps. These features make the LMC6061 both easier to
design with, and provide higher speed than products typically found in this ultra-low power class.
Compensating for Input Capacitance
It is quite common to use large values of feedback resistance for amplifiers with ultra-low input current, like the
LMC6061.
Although the LMC6061 is highly stable over a wide range of operating conditions, certain precautions must be
met to achieve the desired pulse response when a large feedback resistor is used. Large feedback resistors and
even small values of input capacitance, due to transducers, photodiodes, and circuit board parasitics, reduce
phase margins.
When high input impedances are demanded, guarding of the LMC6061 is suggested. Guarding input lines will
not only reduce leakage, but lowers stray input capacitance as well. (See Printed-Circuit-Board Layout For High-
Impedance Work).
The effect of input capacitance can be compensated for by adding a capacitor. Place a capacitor, Cf, around the
feedback resistor (as in Figure 24) such that:
(1)
or
R1 CIN ≤ R2 Cf
(2)
Since it is often difficult to know the exact value of CIN, Cf can be experimentally adjusted so that the desired
pulse response is achieved. Refer to the LMC660 and the LMC662 for a more detailed discussion on
compensating for input capacitance.
Figure 24. Canceling the Effect of Input Capacitance
Capacitive Load Tolerance
All rail-to-rail output swing operational amplifiers have voltage gain in the output stage. A compensation capacitor
is normally included in this integrator stage. The frequency location of the dominate pole is affected by the
resistive load on the amplifier. Capacitive load driving capability can be optimized by using an appropriate
resistive load in parallel with the capacitive load (see typical curves).
Direct capacitive loading will reduce the phase margin of many op-amps. A pole in the feedback loop is created
by the combination of the op-amp's output impedance and the capacitive load. This pole induces phase lag at the
unity-gain crossover frequency of the amplifier resulting in either an oscillatory or underdamped pulse response.
With a few external components, op amps can easily indirectly drive capacitive loads, as shown in Figure 25.
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Figure 25. LMC6061 Noninverting Gain of 10 Amplifier, Compensated to Handle Capacitive Loads
In the circuit of Figure 25, R1 and C1 serve to counteract the loss of phase margin by feeding the high frequency
component of the output signal back to the amplifier's inverting input, thereby preserving phase margin in the
overall feedback loop.
Capacitive load driving capability is enhanced by using a pull up resistor to V+ Figure 26. Typically a pull up
resistor conducting 10 μA or more will significantly improve capacitive load responses. The value of the pull up
resistor must be determined based on the current sinking capability of the amplifier with respect to the desired
output swing. Open loop gain of the amplifier can also be affected by the pull up resistor (see electrical
characteristics).
Figure 26. Compensating for Large Capacitive Loads with a Pull Up Resistor
Printed-Circuit-Board Layout for High-Impedance Work
It is generally recognized that any circuit which must operate with less than 1000 pA of leakage current requires
special layout of the PC board. When one wishes to take advantage of the ultra-low bias current of the
LMC6061, typically less than 10 fA, it is essential to have an excellent layout. Fortunately, the techniques of
obtaining low leakages are quite simple. First, the user must not ignore the surface leakage of the PC board,
even though it may sometimes appear acceptably low, because under conditions of high humidity or dust or
contamination, the surface leakage will be appreciable.
To minimize the effect of any surface leakage, lay out a ring of foil completely surrounding the LMC6061's inputs
and the terminals of capacitors, diodes, conductors, resistors, relay terminals etc. connected to the op-amp's
inputs, as in Figure 27. To have a significant effect, guard rings should be placed on both the top and bottom of
the PC board. This PC foil must then be connected to a voltage which is at the same voltage as the amplifier
inputs, since no leakage current can flow between two points at the same potential. For example, a PC board
trace-to-pad resistance of 1012Ω, which is normally considered a very large resistance, could leak 5 pA if the
trace were a 5V bus adjacent to the pad of the input. This would cause a 100 times degradation from the
LMC6061's actual performance. However, if a guard ring is held within 5 mV of the inputs, then even a
resistance of 1011Ω would cause only 0.05 pA of leakage current. See Figure 28 for typical connections of guard
rings for standard op-amp configurations..
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Figure 27. Example of Guard Ring in P.C. Board Layout
Inverting Amplifier
Non-Inverting Amplifier
Follower
Figure 28. Typical Connections of Guard Rings
The designer should be aware that when it is inappropriate to lay out a PC board for the sake of just a few
circuits, there is another technique which is even better than a guard ring on a PC board: Don't insert the
amplifier's input pin into the board at all, but bend it up in the air and use only air as an insulator. Air is an
excellent insulator. In this case you may have to forego some of the advantages of PC board construction, but
the advantages are sometimes well worth the effort of using point-to-point up-in-the-air wiring. See Figure 29.
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(Input pins are lifted out of PC board and soldered directly to components. All other pins connected to PC board).
Figure 29. Air Wiring
Latchup
CMOS devices tend to be susceptible to latchup due to their internal parasitic SCR effects. The (I/O) input and
output pins look similar to the gate of the SCR. There is a minimum current required to trigger the SCR gate
lead. The LMC6061 and LMC6081 are designed to withstand 100 mA surge current on the I/O pins. Some
resistive method should be used to isolate any capacitance from supplying excess current to the I/O pins. In
addition, like an SCR, there is a minimum holding current for any latchup mode. Limiting current to the supply
pins will also inhibit latchup susceptibility.
Typical Single-Supply Applications
(V+ = 5.0 VDC
)
The extremely high input impedance, and low power consumption, of the LMC6061 make it ideal for applications
that require battery-powered instrumentation amplifiers. Examples of these types of applications are hand-held
pH probes, analytic medical instruments, magnetic field detectors, gas detectors, and silicon based pressure
transducers.
Figure 30 shows an instrumentation amplifier that features high differential and common mode input resistance
(>1014Ω), 0.01% gain accuracy at AV = 100, excellent CMRR with 1 kΩ imbalance in bridge source resistance.
Input current is less than 100 fA and offset drift is less than 2.5 μV/°C. R2 provides a simple means of adjusting
gain over a wide range without degrading CMRR. R7 is an initial trim used to maximize CMRR without using
super precision matched resistors. For good CMRR over temperature, low drift resistors should be used.
If R1 = R5, R3 = R6, and R4 = R7; then
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∴ AV ≈ 100 for circuit shown (R2 = 9.822k).
Figure 30. Instrumentation Amplifier
Figure 31. Low-Leakage Sample and Hold
Figure 32. 1 Hz Square Wave Oscillator
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REVISION HISTORY
Changes from Revision C (March 2013) to Revision D
Page
•
Changed layout of National Data Sheet to TI format .......................................................................................................... 14
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
LMC6061AIM/NOPB
LMC6061AIMX/NOPB
LMC6061IM/NOPB
LMC6061IMX/NOPB
ACTIVE
SOIC
SOIC
SOIC
SOIC
D
D
D
D
8
8
8
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 85
-40 to 85
-40 to 85
-40 to 85
LMC60
61AIM
ACTIVE
ACTIVE
ACTIVE
2500 RoHS & Green
95 RoHS & Green
2500 RoHS & Green
SN
SN
SN
LMC60
61AIM
LMC60
61IM
LMC60
61IM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LMC6061AIMX/NOPB
LMC6061IMX/NOPB
SOIC
SOIC
D
D
8
8
2500
2500
330.0
330.0
12.4
12.4
6.5
6.5
5.4
5.4
2.0
2.0
8.0
8.0
12.0
12.0
Q1
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LMC6061AIMX/NOPB
LMC6061IMX/NOPB
SOIC
SOIC
D
D
8
8
2500
2500
367.0
367.0
367.0
367.0
35.0
35.0
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
TUBE
*All dimensions are nominal
Device
Package Name Package Type
Pins
SPQ
L (mm)
W (mm)
T (µm)
B (mm)
LMC6061AIM/NOPB
LMC6061IM/NOPB
D
D
SOIC
SOIC
8
8
95
95
495
495
8
8
4064
4064
3.05
3.05
Pack Materials-Page 3
PACKAGE OUTLINE
D0008A
SOIC - 1.75 mm max height
SCALE 2.800
SMALL OUTLINE INTEGRATED CIRCUIT
C
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A
PIN 1 ID AREA
6X .050
[1.27]
8
1
2X
.189-.197
[4.81-5.00]
NOTE 3
.150
[3.81]
4X (0 -15 )
4
5
8X .012-.020
[0.31-0.51]
B
.150-.157
[3.81-3.98]
NOTE 4
.069 MAX
[1.75]
.010 [0.25]
C A B
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
[0.11-0.25]
0 - 8
.016-.050
[0.41-1.27]
DETAIL A
TYPICAL
(.041)
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
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EXAMPLE BOARD LAYOUT
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
SEE
DETAILS
1
8
8X (.024)
[0.6]
SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
EXPOSED
METAL
EXPOSED
METAL
.0028 MAX
[0.07]
.0028 MIN
[0.07]
ALL AROUND
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
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EXAMPLE STENCIL DESIGN
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
1
8
8X (.024)
[0.6]
SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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